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    12 views14 pages

    Apparatus An Method For Slicing An Ingot US7431028

    Uploaded by

    manoj_sitec

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
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    2) United States Patent diet al. (54) APPARATUS AND METHOD FOR SLICING AN INGOT (75) Investors: unsung Ji, Kumi (KR); Kytingmoo ‘Lee, Kumi (KR) (73) Assignee: Siltron Ine, Kumi (KR) (*) Notice: Subject to any disclaimer, the term of this pateat is extended of adjusted under 35 USC. 154(b) by 107 days. (21) Appl. Nos 14734774 (22) Filed: Apr. 12,2007 Prior Publication Data S 200710190897 AI Aug. 16,2007 Related US. Application Data (@) Division of application No, 11/256A351, filed om Oo. 21, 2005, G0) Fore n Priority Data Applic (KR) Now. 23, 2004 10-2004.0096218 Gb Ince. Bub 00 BIRD 1106 us.cl. (200601) 2006.01) 125/16.02; 125/21: 451/37 451/304; 88/651.1 451/36, 125/16 01, 16. 125/21; 83/651.1 ‘ce pplication file for complete search history. «2 (58) Fleld of Clasification Seat 4451/59, 296, 304, 37 Feed SpeedtV) sT40 ‘USOO74 102852 US 7,431,028 B2 Oct. 7, 2008 (10) Patent No. 4s) Date of Patent: 66) References Cited US. PATENT DOCUMENTS 5215806 821998 ‘Tonegiwa sta SOsISH A + 81909 Kiuch etal, 251602 Soa770R A * 911999 Toyama asus 062.209 A * $2000 Oishi Tist608 6352071 BL 32002 Kononchuk etal 6802928 B2 102004 Nakashima 7025668 B2 42006 Bender 2oosioosins2 81 $2004. MeAslay eta 20060249138 AL 11/2006 Marsumot6 FOREIGN PATENT DOCUMENTS BP 9.26 11997 OTHER PUBLICATIONS Patoat Abstracts of Japan, Publication No, 09-262827; Date of Pb Tiaion 10-07-1997; un the nary of Nalketzaa Yasuaki ta * cited by examiner Primary Examiner Fileon P. Morgan (14) Attorney, Agent, or Firm Christe, Parker & File, LLP on ABSTRACT A method for slicing an ingot may improve nanotopography ata surface ofa wafer. Inthe method, an ing is sliced ino.a plurality of wafers vias shurry while sary is supplied to a moving wire. fist wire o form a first slicing portion atthe wafer firstly slices one sce ofthe ingot. A second wire sec- ‘ondly slices the remaining portion of the ingot to form a sovondslicing portion continued Irom the fist slicing portion ‘wherein the fist wie has. a smaller diameter than that ofthe second wire 7 Claims, 8 Drawing Sheets Slicing Time(T) U.S. Patent Oct. 7, 2008 Sheet 1 of 8 US 7,431,028 B2 FIG.1 U.S. Patent Oct. 7, 2008 Sheet 2 of 8 US 7,431,028 B2 FIG.2 wa ST20 ST10 ( 408(40) 7 ( wi 40b(40) U.S. Patent Oct. 7, 2008 Sheet 3 of 8 US 7,431,028 B2 S720 ST10 x A, FIG.3 W { U.S. Patent Oct. 7, 2008 Sheet 4 of 8 US 7,431,028 B2 FIG.4 Feed Speed(V) Slicing Time{T) ST30 ST40 ST50 U.S. Patent Oct. 7, 2008 Sheet 5 of 8 US 7,431,028 B2 FIG.5 U.S. Patent Oct. 7, 2008 Sheet 6 of 8 US 7,431,028 B2 FIG.6 U.S. Patent Oct. 7, 2008 Sheet 7 of 8 US 7,431,028 B2 FIG.7 : | ST80 1 1 ST70 y ST60 70 U.S. Patent Oct. 7, 2008 Sheet 8 of 8 US 7,431,028 B2 FIG.8 US 7,431,028 B2 1 APPARATUS AND METHOD FOR SLICING. ANINGOT (CROSS-REPERENCE TO RELATED APPLICATION ‘This application is divisional application of U.S. patent application Ser. No, 11/256,331 filed on Oct. 21,2008, claims priority 10 and the henefit of Korean Patent Application 10-2004.0096218 filed in the Korean Intellectual Property Ofice on Nov. 23,2004, the disclosure of which is incorpo= rated herein by referen BACKGROUND () Technical Field This application relates to an apparatus anda method for slicing an ingot. More particularly, the present invention relates to an apparatus and a method for slicing an ingot ‘capable of improving fine unevenness of & wafer, ie. is nnanotopogrephy. () Description ofthe Related Art Generally, a wafer manufacturing process includes an ingot growing process, a slicing process, an edge grinding process, lapping process, an etching process, a back side polishing process, a pre-anneal cleaning process, an edge Polishing process, and a front polishing process. In the ingot rowing process silicon (Si is induced from sand and i thea Dried to make a silicon sow material. desired impurity is the injected to make an Nye or P4ype silicon ingot. Inthe slicing process, the N-type P-ypesilcon ingot produced in theingot process seutto havea desired thickness. Inthe ede rinding proces, inorder to reduce the roughness aod to have a predetermined shape a an edge portion of the wafer thats ‘eased by the slicing process, the edge portion ofthe wafers polished. In the lapping process, in order to improve the flatness onthe font and back surfaces of the wafer that have boon cut toa given thickness, the surfaces of the wafer are polished. Inthe etching process in order io remove remsining fine cracks of defects on the surface of the wafer that is polished in the lapping process. the surface ofthe wafer is ‘etched using & chemical reaction, In the back side polishing process, in order to improve the fatness of the back side ‘urface othe wafer nto remove damage thereof cased hy the etching process, the back side surface of the wae i polished. In the yre-anneal leaning process, in onder to com- PPensate foran incomplete ltice delet stractire oceurtingon the surface that is eaused by the etching process, annealing and cleaning processes are performed on the surface of the wafer In te edge polishing proces, in order to reduce sur- ace dageand poor Maines atte edge portion of the wafer ‘eased by the etching process, the edge portion of the wafers polished. Finally, inthe fot polishing process, in order 10 repair damage and improve the fatness ofthe front sideof the wafer occurring by the etching process, the front side ofthe ‘wafer is polished. As described above, the wafer manufacturing process pro= ‘duees a polished wafer by successively performing the ingot growing process, the slicing process, the lapping process, the ‘etching process, and the polishing processes. More speci cally, in the slicing process, an ingot made in the ingot grow Jing process i eu into thin shoetsusing-a cutting too. Inthe ‘cutting tol, a highly tensioned stel wie is wound around a phurlity of grooved rollers with a predetermined pitch, and luimy is supplied tothe wire. The wire is easied over the 0 o 2 er at high speed. The ingot is pressed onto the wire at a predetermined speed, while the slurry is supplied tothe wire Due tothe euting force ofthe wire, the ingots sliced into thin sheets of wafer via the stun. ‘In the slicing process, the wite and the ingot ar formed withacircularscction ofa predetermined diameter and fed rate is varied tobe high atthe beginning, and end points of slicing and low a the middle point, wherein a feed ate refers {oa feed speed at which the ingots supplied onto the wire. Accordingly atthe beginning of slicing itis dificult forthe Wire t be positioned ata desired postion of the ingot. As a result, the Sliced wafer may have undesirably high nanoto- ography at one or more surfiee portions thereof, even after secessively having achieved the lapping process, the etching process, andthe polishing processes. Tigh nanotopography generally causes low yield rate of semiconductor chips The nanotopography refers to @ nanometer scale height variation of a unevenness ofa spatial wave produced on & surlace of a wafer, roughness refers to an A. scale height variation, and flatness refers to a yum sea height variation in ‘order to indicate fine surface characteristics. Iti desired to ‘develop a design nile capable of preventing poor nanotopog- ‘nphiy in the development of semiconductor technology. A ‘design rule has been developed to improve fine surface char acteristics of wafer that is, a nanometer scale wave depend a achemical and mechaaieal composite polishing pro- cess referred to.as CMP (Chemo-Mectsnical Polishing). This process has been adapied 10 meet objectives of the slicing process using the wire inthe wafer mantfactring process. Tnthe slicing process, theuseofaconventional wire to sice the ingot causes poor manotopography, that is, spatial waves ‘on a surface of wafer, When the sliced water has high ‘sanotopogmphy. many filed products are produced even after successively having achieved the lapping process, the ‘etching process. and the polishing processes ‘The above information disclosed in this Background see~ ‘ion is only For enhancement of understanding of the bock- rund ofthe invention, and therefore, i may contain infor ‘mation that doesnot fons the prior art that is already known inthis country toa person of ordinary skill in the at SUMMARY, ‘The disclosed embodiments relate to a method and an apparatus for slicing an ingot that may have advantages of Improving nanotopography a surface of a wafer ‘An exemplary method and apparatus for slicing an ingot cording to an embodiment othe present vention incdes fintly slicing one side ofthe ingot with a ist wire co form a fint slicing portion at the wafer, and secondly slicing the remaining portion of the ingot with a second wie to form @ secondslicing partion continte frm the fist slicing portion, ‘wherein the fist wire has a smaller diameter daa that ofthe second wire “The fist wire may be an old wire chat has previously sevonulyslced the ingot, and the second wire may be a nese Wire that has not previously sliced the ingot ‘The first Wire may be supplied ina range of 1 10 20 kilo- meters (ki) and may firstly slice one side of the ingot to a depth ina minge of Ito 25% of the diameter thereof. ‘Ina luther embodiment, feed speed ofthe ingot is raised ina stepwise manner tothe maxinnim speed (Vinax) oF les the feed speed i controlled corresponding toa diameter vari ance ofthe ingot, and the feed speed is maintained to beat the sed spoed, ‘The feed speed may start ata lower spood than minimum ‘eed speed when controlling the Feed speed US 7,431,028 B2 3 Ina furtherembodiment, fst guide beam attached toone side of theingot is sliced by a wire, the ingot is then sliced, and ‘a second guide beam attached (othe other side ofthe ingots finally slived, Before slicing, the first puide beam may be attached to one side ofthe ingot anda second guide beam may he attached to the other sce of the ingot by a water-soluble auhesive, “After finally slicing, the sliced fist guide beam, the wafer, and the socond guide beam may be separated, The sliced first guide beam, the wafer, and the second guide beam may be separated by water ina range of 70°C.1095°C. ‘An apparatus fr slicing aa ingot aovording to an exemn- plary embodiment of the present invention includes fist and Second work rollers arranged in parallel to cach other a Wire ‘continuously wound around the ist and second work rollers With a predetermined pitch along # longitudinal directi thereof an ingot placed onto the wire between the first an second work rollers a slurry supplier for supplying slury to the wire arranged atone or both sides of the ingot, anda work plate for feeding the ingot tobe sliced onto the wire, wherein 2 the wires formed witha first wire anda sscond wire, the fst wire connecting with the second wire and having a smaller diameter than that of the second wire. The fist wire may be an old wire that has been previously ‘sed to secondly slice the ingot, andthe second wire may be anew wie that has not been previously use slice the ingot, A third work roller may be further provided such thatthe fis, second, ad third work rollers ae arranged ina iang- Jar layout. Also, two third work rollers may be farther pro- vided such that the fist work roller, the second work roller, and the bwo third work rollers ar arranged ina square layout. "An apparatus for slicing an ingot according to an exem= play embodiment of the present invention includes fist and Second work rollers arranged in parallel to each other, a wire ‘continuously wound around the ist and second work rollers With @ predetermined pitch along & longitudinal direction thereon ingot placed onto the wire between the first and second work rollers, a slurry supplier for supplying samy to the wire srranged atoncor both sides ofthe ingot, anda work plate for feeding the ingot tobe sled onto the wire, wherein S first guide heam is frter provide on one side ofthe ingot by the wire anda second guide beam s further provided on the clher side of te ingot by the work plate The first and sevond guide beams may be respectively ormed such that portions ficing the ingot have the same ‘curvature as tat of the corresponding portion of the ingot BRIEF DESCRIPTION OF THE DRAWINGS. FIG. 1 is @ perspective view of an apparatus for slicing an ingot aceoeing 10 a frst exemplary embodiment of the present invention, FIG. 2s atop plan view ofa sliced wafer acconting 1 3 first exemplary embodiment of the present invention, FIG, 3s. side view of a sliced Waler according to frst, ‘exemplary embodiment of the present invention, FIG. 46a graph showing a relation of feed rate of an ingot and a slicing lime according lo a second exemplary ‘embodiment ofthe present invention, TIG. 5 isa top plan view ofa waler showings relation of feed rate ofan ingot with a slicing time of FIG. 4 FIG, 6s a perspective view of an apparatus for slicing an ingot according to a second exemplary embodiment of the present invention, FIG. 7 and FIG. 8 are top plan views of a sliced wafer socording to a third exemplary embodiment of the present invent 0 o 4 DETAILED DESCRIPTION OF THE EMBODIMENTS Exemplary embodiments of the present invention will hereinafter bedeseribe in detail wit rference tothe aecom- panying drowings. FIG. Iisa perspoctve view ofan apparatus fr slicing an ingot according to a frst exemplary embodiment of the present invention. Referring to FIG. 1, an apparatus for slicing an ingot includes first, second, an third work oles 10,20, and 30,9 ‘Wire 40,2 slimy supplier $0, and a work plate 60 Tnorder to slice the ingot into a plurality of waters W, the first and second work rollers 10 and 20 ae configured such that a wire 40 is repeatedly wound over these two rollers 10 and 20 ands supported in a tensioned state there betwen. etal the ist and second work rollers 10 and 20 are located in parallel, and the fist and second work rollers respectively hhave a plurality of grooves 11 and 21 engraved thereon with ‘uniform pitch P To reduce the complexity of FIG. Lonly @ portion ofthe grooves 11 and21 aeillusirated. These grooves Mand 21 serves channels forthe wire 40 Also, the grooves 11 and 21 are formed spirally on the outer periphery surface of the first and second work rollers 10 and 20, With sch structure, the wire ean be eartied around the first and second work rollers 10 and 20 sequentially or in a reciprocative ‘manner such that when the wire moves intone direction while repeatedly passing around the pair of rollers 10 and 20, it ‘winds its way along the spiral grooves from one end of the rollers 10-and 20 10 the other end thereof whea slicing the ingot 1 The third work roller 30 i located below the frst and the second work roller: 10 and 20 40 provide clearance for the Wire 40 at the underside the rollers 10d 20 thereto, $0 the ingot to be sliced is aot interfered with by the wie 40 ‘beneath the rollers 10 and 20, "Two of more thied work rollers 30 may be provided or no thind work roller 30 may’ be pro- Vided. is desired that the fis, second, 2nd third work rollers 10,20, and 30 are arranged ina triangular layout (see FIG. 1) ‘ora polygonal layout suchas a square layout. When no third wworkroller30 is provide, the frstand second work rollers 10 And 20 may be atranged in parallel. The third work roller 30 bhas aplurity of grooves H that may have the same pitch as thatof the proves Hand 21 such that the wire is sequentially carried around the ist, ond, and third work rollers 10,20 And 30. To reduce the complexity of FIG. 1 only'a portion of the grooves 31 areillsiated. As such, the wire 40 is sequen- silly wound around the first, second, and third work rollers 10, 20, and 30 according to a triangular layout or another polygonal layout thereof, When no thd work roller 30 is provided, the wire 40 may be reciprocally wound between list and second work rollers 10 and 20, "The wire 0 is formedas single strand and is sequeatially ‘wound around the first, second, and third work rollers 10,20, and 30 and is consecutively wound over the neighboring ‘grooves 11,21 and 31 of the respective irs, second and third Work rollers 10, 20 and 30. The wire 40 is consecutively ‘wound over the respective fis, second, and third work rollers 10, 20, and 30 along the longitudinal direction thereof, The ‘wire 40 forms a layout such that consecutive ire wraps are ‘arranged in parallel with 9 uniform pitch P along the respec- tive grooves IT and 21 hetween the fist and second work rollers 10 and 20. The number of grooves in the layout deter ‘mines the numberof sheets of waters W tobe sliced from the ingot 1. To reduce the complexity of FIG. 1 only a porion of {oone end ofthe wire 40 along the arrow direction of FIG. 1, US 7,431,028 B2 5 the wire 40s drawn from the other side thereon a stetehed state around the rollers 10,20, and 30. The wine 40 is repeat ‘edly wound over the Iongitudinal neighboring grooves 11,21, land 31 ofthe respetive first, secondan tind work rollers 10, 20, and 30 while the first, second, and thi work rollers 10, 20, and 30 rotate in one direction. The fst, second, and hid ‘work rollers 10, 20, and 30 may be rotated by means of = ffietion force fm the moving wire or may he rotated by &

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