6 3) a ey © co) 60) Des Dee Mat yes (1) (2) (8) 66) United States Patent Hara et Inventors: Yasus Assignee: Notice: Appl. No. File Hara, Shinaanyo (1); Masahiro Aoki, Shiananyo JP); Hiroaki Hayashi, Hiksc (JP) ‘Tosoh Corporation, Yamaguchicken apy Suibject to any disclaimer, the term of this pateat is extended or adjusted uader 35 Use Sb) by 0 days (09)996,773, Nov. 0, 2001 Prior Publication Data US 20020128164 AL Sep. 12,2002 Foreign Application Priority Data 13, 2001 Int. Cl US. Cl. Fleld of § US. PATENT DOCUMENTS. ey ce a we) @ carch 510/177, 505, 421 "438/692, 695; 1347, S017 References Cited 4955975 A= 4987 Sa03386 A Siasoaso A © 11/1905 Snoble ‘Aoyama e ita ta 2000390153 au00-300154 2001 a7a360 cup 17/00 ‘10/176, 438/692; 438/693 S075, 176, 432, 475, 372, 4995, 40,41 snail 20537 Suns US00¢ 157976822, (a0) Patent No. US 6,797,682 B2 (4s) Date of Patent: Sep. 28, 2004 S84027 A 1/1998 ayashidn ot SSS362 A+ 1909 Morinage ctl 142 SOUg36 A + i190 Hads ea, a2 6030801 8 2200 Waarsta 6.228823 BL * 52001 Moringa ta. s1n)75 6323169 BL * 112001 Abe eta. 510,1% 5428387 Bi © 82002 Hun etal ‘S18 e.46s403 BL * 102002 Skee 510175 FOREIGN PATENT DOCUMENTS ep 1LO12 AL 57200 Ep 1iso72 At 57200 a. DIGss28 A B1s8 wo woUSMEsT2 295 WO WOODMIS0 L199 Wo Wooo0ma7 1190 WO WOouTNS SIH OTHER PUBLICATIONS Database WPI, Section Ch, Week 199527, Derwent Public cations Lid, London, GBs AN 1995-204353, XPOO2192035 and JPO7-118885 A (Mitsubishi Gas Chem. Co, nc), May 9, 1995, absiract. Database WPI, Section Ch, Week 199630, Derwent Publi cations Lid, London, GB; AN 1996-20308, XPOO2192036 and] IP O8-124888 A (Mitsubishi Gas Chem. Co,, ne), May 17, 1996, abstract. * cited by examiner Primary Examiner—Gregory Web (74) Attorney, Agent, or Firm—Sughrue Mion, PLLC on ABSTRACT A rresist stripper which comprises a peroxide and a quater nary ammonium sal, 14 Claims, No DrawingsUS 6,797,682 B2 1 RESIST STRIPPER, ‘The present invention relates 10 a sleipper 10 strip a photoresist layer and atitanium oxide in production process fof eg, semiconductor integrated circuits, printed wiring boards and liquid crystals, ‘A semiconductor integrated ciruit is produced by such a method tit a photoresist is coated on a substrate, followed by exposure and development, then etching iscatied out 10 form 2 circuit, and then the photoresist is stripped from the substrate, or ashing is caried out after formation of the ruil the resist is emoved, and thea the remaining resist, residue is stripped. To strip the photoresist from the substeate, of to Seip the eesist reside from the subsicit, ‘various resist strippers have conventionally been proposed. For example, 1P-A-62-49355 discloses a resist stripping liquid compesition employing an alkanolamine. However, the stripping liquid composition employing an alkanolamine is insuficent for sriping of a resist resklue degenerated t0 have inogganie propeaies bya realment such as dey etching, ashing of ion implantation. Further, in a latest submicron treatment technique, a metal material containing eg. TIN or ‘Ti is used, but in x case of using such a metal material, a Stable by-product such a a titanium oxide tends to form ‘during the treatment. A titanium oxide could not be stripped with 4 conventionally used alkanolamine Accotdingly, a8 & resist stripping liquid composition having more excellent stripping properties, one containing hydroxylamine has been proposed in recent years. For ‘example, JP-A-4-289866 proposes a resist stripping liquid composition containing hydroxylamine and an alkanlamine, ad IP-A-6-266119 proposes & resist stip- Ping. liquid composition containing hydroxylamine, an alkanolamine and catechol. Although this resist stripping ‘composition containing hydroxylamine provides excell tianium oxide stripping properties, it is an unstable ‘compound, and accordingly there is ¢ risk or eg. decom= Position oF explosion Tn addition tothe abowe amine type resist stripper show= ing basicity, 4 resist stripper by a combination of hydrogen Peroxide and an cil has also been proposed (eg. P-Act 15740). A titanium oxide is generally known o dissolve in hydrogen peroxide in an acidic condition, however, combi- nation of hydrogen peroxide and an acid is not optimal for ‘Stripping ofan alkali development type photoresist which is Tikely o be stripped in basic condition, ‘Asdescribed above, conventionally proposed resist strip- pers have insufficient stripping properties, particularly strip- Ping properties of «titan oxide, and with which there is 4 risk of decomposition or explosion, Accordingly, itis an ‘object of the present inveation to provide a resist stripper ‘containing no hydroxylamine having a high risk of explo= ‘and providing excellent resist striping properties and jum oxide stripping properties, ‘The present inventors have conducted extensive studies ‘on resist stripper and asa resll found that a resist stripper ‘comprising a peroxide and a quaternary ammonium sat is, useful as resist stripper having excellent resist stripping properties and titanium oxide stripping properties, and the present invention has heen accomplished on the basis of this discovery. ‘Namely the present invention resides in a resis stripper ‘comprising a peroxide and a quaternary ammonium salt ‘Now, the present invention willbe described in detil with reference to the preferred embodiments Inthe prescat invention, stripping isto remove a resist or a resist residue remaining. after formation of a eireuit, % o 2 ‘obtained by coating a photoresist ona substrate, followed by exposure and development, then carrying oul a treatment such as etching. Namely, development is removal ofa esist solubilized in liquid by exposure of « photoresis, and ripping is removal ofa portion remaining afer the devel- ‘opment ora portion which becomes hardly soluble in liquid by means of a treatment such as etching or ashing, The resist stripper of the present invention useful to strip 4 photoresist or its residue. Namely, « photoresist is coated on 2 substrate, followed by exposure and ‘development, and then a treatmeat such a etching is eartied fou To form a circuit, and then the photoresist is seipped by the stripper of the present invention. Otherwise, afer for ‘mation of the circuit, ashing is carried out to remove the ‘esis, an then the remaining resist rescue is tipped by the stripper of the preset invention. The resist stripper of the present invention strips titanium oxide which is 2 by-preduet in formation of a circuit, as well asthe tess. A titanium oxide, patcularly @ {etravilen lanium oxide isan extremely stable compound And is hardly soluble in water. As the titanium oxide, one hhaving various valency such as teravalent, tevalent or bivalent may be mentioned, and it isthe tetravalent titanium ‘oxide (\tanium dioxide) that is mos insoluble. On the other hand, a. most soluble titanium species is TT, and a solid phase litanium oxide is known to easily be dissolved by ‘eduction n an acide region. However, the resist stripper of the present invention reduces and dissolves, and. sieips various titanium oxides including titanium dionide which is ‘most insoluble in an alkaline region at which the resist ean be sipped, [Essential components of the resist stripper ofthe present invention are a peroxide and a quaternary ammonium sal The peroxide to be used ia the resist stripper of the prescal invention ats asa reducing agent The peroxide to be used ia the resist stripper of the present invention is atleast one member selected from the group consisting of hydrogen peroxide, persulfate, 2 perborate, a percashonate, an organic peracid and an organic bhydeoperoxide. Among them, hydrogen peroxide is indus- trally preferred since itis available ata lowest cost Hydrogen peroxide may be used as an anhydride or an aqucous solution, oF as 2 peroxyhydrate of eg. ured oF 2 {quaterary ammonium salt (one baving hydrogen peroxide ‘coordinated to urea ora quaternary ammonium salt, such as water in water of erystllization) "The inorganic per salt such as persulfate, perborate or percarbonate i used preferably 38a salt with ammonia o¢ an amin or asa quaternary ammonium sat, Other salts sueb as sodium salt or potassium salt may be used, however, removal of metal ions is required, such being unfavorable industrially. ‘The organic peracid is not particulary limited so long as it is stable when mixed with 4 quaternary ammonium sal and it may, for example, be performic acid, peracetic acid, benzoyl peroxide or m-chloroperbenznie aid ‘The organic hydroperoxide is a compound represented by a general formula R—OOH (wherein R is an alkyl or ary) and examples of whieh include butyl hydroperoxide and cumyl hydroperoxide, ‘The quaternary ammonium salt to be used for the resist stripper ofthe present invention may be any one showing alkalinity. Examples of the quaternary ammonium salt jnclude quatemary ammonium hycrowide, a quaternary ammonium carbonate, a quaternary ammonium carboxylate fnd-a quaterary ammonium peroxyearboxylate. They are All alkaline substances and they may be used alone or a8 2US 6,797,682 B2 7 mixture. Among these quaternary ammonium salts, particu- larly prefered is hydroxide or a carboxylate. Ana carboxylic id, eitber aliphatic carboxylic acid or aromatie carboxylic “id may be used, but an aromatic cathoxylic acid is prefered industrially since it has a good stability. The sromatie carboxylic acid may, for example, be benzoic aid, Sslieylic acid or phthalic acid. The aliphatic carboxylic acid for example, be acetic acd, lactic acid, adipic acid oF propionie acid. ‘The cation moiety inthe quatemary ammonium salt tobe used forthe resis stripper ofthe present invention, i. the ‘quaternary ammonium, may be a tetaalkylammonitm such as tetramethylammonium, tetraethylammonium, tetra n-propylammonium, triethylmethylammonitm or ‘dodeeylrimethylammoaium, a benzyl alkylammonium ‘such as benzyl trimethylammonium, of an alkyl hydroxyalkylammonium such as’ trimethyl-2- hhydroxyethylammonium (choline). To the resist sirpper othe present invention, in alton to the peroxide and the quaternary ammonium salt, atleast ‘one member selected from the group consisting of an amine, ‘water soluble organic solvent and ater may be added. As fn amine to be added tothe resist stripper, 5s conventionally used as a resist seipper may be added. ‘Specific examples of an amine include slkanolamines such a8 monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N-2-amiaoethy)ethanolamine, N,N-dimethylethanolamine, N.N-diethyletbanolamine, N.N-dibutylethanolamine, N-methylethanolamine, Nvethylethanolamine, N-butylethanolamine, Nemethyldicthanolamine, N-ethyldicthanolamine, monoisopropanolamine, diisopropanolamine, trisopropanolamine, N-(2-hydroxyethyl) piperazine and N-Q2-hydroxyethyD morpholine, ethyleneamines such as ‘ethylenediamine, diethylenetriamine, riethylenetetramine, etraetbylenepentamine, pentaethylenehexamine, piperazine, N-(2-aminocthyl)piperazine and {cethylenediainine, N-alkylethyleneamines such as NNN, N'-tetramethylethylenediamine, N,N,N'N',N’ penlamethyldiethylenetriamine, Nemethylpiperazine’ and NwN.N-trimethylaminocthylpiperazine, diamines other than ‘ttyleneamine, sch as propanediamine, butanedismine and hexamethylencdiamine, imidazoles such as imidazole, I-methylimidazole, 2-methylimidazole, 1,2- dimethylimidazole, 1,2,4,5-tetramethylimidazole and 2eethylt-methylimidazole, monoamines. such as ‘morpholine, cyclohexylamine, 2-thyl-hexylamine, benzy- Jamine and aniline, and alkylamines such as triethylamine, teipropylamine and tibutylamine. Further a hydroxylamine may be added although it is not prefereed in view of s ‘corrosion of risk. These amines may be used alone of in ‘combination 38 a mixture of at least to. "The water soluble organic solvent to be wsed in the present invention may be one which is conventionally used a8 a resist stripper. Examples ofthe water soluble organic solvent include sulfoxides such as dimethylsulforide, sul fones such as dimethylsulfone and diethylsulfone, amides ‘such as. N,N-dimethylformamide, N.N-diethylformamide, N,N-dimetiylacetamide and N,Noethylacetamide, lactams ‘such as N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrolidone and N-hydroxyethyl imidazotidinones such as 1,3-dimethy- elycols such as ethylene glyco}, diethylene glycol, triethyle ‘ene lyeol, propylene glyco, dipropylene glycol and trpro- pylene glycol, and glycol ethers such as ethylene glycol ‘monomethyl ether, ethylene glycol monoethy ether, elhyl- ‘ene glycol monabutyl ether, diethylene glycol monomethyl o 4 ether, diethylene glycol monoethyl ether, diethylene glycol ‘monobutyl ether, propylene glycol monomethyl ether, pro- pylene glyeo! monoethyl ether, propylene glycol monob ty tether, dipeopylene glycol monomethyl ether, diprapylene lyool monoethyl ether and dipropylene glycol monobutyl ther. These water soluble orgunie solvents may be uscd lone or in combination a8 a mixture of at least two. To the resist stripper of the present invention, a conven sionally used anticorcsive may be added. The anicorrosive say, for example, be a carboxylic acd such as Formic acid, acetic acid, propionte acd, cetylic acid, adipie acid, pimelic acid, sebacic acid, suberic acid, azelaie acid, benzoic aid, Salicylic acid oe phthalic sci, an aminopolycatboxylic acid such 38 nel triaetie acid, ethylenediaminetetracetic acid ‘or diethylenetriaminepentaacetic acid, an aromatic hydroxy] group-eontaining compound such as phenol, resorcinol, Pyfocatechol or pyrogallol, an azole. such as pyrrole, Iiidazole, triazole or terazole, oF a sugar such as glucose, sucrose o¢ fructose. Tn the ress stripper of the present invention, proportions of the peroxide, the quaternary ammonium salt, water, the amin and the Water soluble organi solvent vary depending tipo the compounds to be used) and thereby be hardly limited. However, the hydrogen peroxide is from 0.1 0 30 ‘wt, the quaternary ammonium salt from 1 10 50-wt %, waters from 1 to 90 Wt‘, the amie is from 1 t0 50 wt & and the water soluble organi solvent is from 1 wo 50 wt. Preferably, the hydrogen peroxide is from 0.5 to 25 wt %,the {quaternary ammonium salt is from 5 to 50 st, water is ftom 1 0 90 wt % the amine is from 110 40 w & and the water saluble organie solvent is from 1 to 50 wt %. More preferably, tbe peroxide is from 1 t0 25 wt , the quaternary is from 5 to 40 wi Sb, water i fom 1 to 90 oe is from | wo 30 and the water soluble ‘organic solvent is from 1 10 50-wt %. These compounds may be used beyond the above ranges, but tbe stripping proper- ties of the resist and stability tend to decreas, ‘The resis stripper ofthe present invention may be used by acing each component when the resist is stripped othe ‘eomponents may be preliminarily mixed. "The quaternary ammonium salt and the peroxide to be used for the resist stripper of the present invention may be prescal in a form of a mere misture or in a form of one having the peroxide coocdinated to the quaternary ammo- jum sal, such as « peroxyhydrate of a quatemary ammo- sium salt ‘The peroxyhydrate having hydrogen peroxide coordi- nated to a quaternary ammonium sat, sch as water in water of erystallizaton, isa stable compound, and itis possible 10 Isolate tin the form of erysals inthe air at room tempera ture, As 4 method to produce the peroxyhydrate of @ quae temary ammonium salt a conventional method for produe- ing a peroxyhydrate can be employed, and the method is not particularly limited. A method! of adding hydrogen peroxide fn an equivalent smount of more to an aqueous solution of| ‘quaternary ammonium salt, followed by heating to decom- pose excess hydrogen peroxide, a method of similarly add- Jing hydrogen peroxide in an equivalent amount or more 10 an aqueous solution of a quaternary ammonium sal, thea adding eg, an enzyme, a metal salt or a metal thereto 10 ecompose excess hydrogen peroxide, ora method of gradu- ally ading hydrogen peroxide in an equivalent amount or Jess fo a quaternary ammonium sat, may, for example, be ‘mentioned, Further, it is allowed to use solvent other than ‘water for production. When hydrogen peroxide is coord fated to the quaternary ammonium salt to form @ peroxyhyclrate, even when the peroxybydrate is mixed withUS 6,797,682 B2 5 organic substance such a8. an amine which is easily ‘oxidized with hyclrogen peroxide, it docs aot react with the peroxyhydrate and is stable, and handling tends to be easy Namely, when a peroxide is coordinated to « quaternary ammonium salt in a case where another component i added to the resist stripper of the present invention, rection of the peroxide with the additive and the reaction ofthe quaternary Ammonium salt withthe additive are suppressed, whereby ‘wider ranges of substances can be used a8 an additive “The resist stripper ofthe preseat invention can bellied fora resist which can be developed with an aqueous alkali solution ‘The resist stripper of the present invention is wseful to strip 4 photoresist. membrane coated on an inorganic substrate, photoresist layer eemaining after dry etching of 2 photoresist membrane coated oa an inorganic substrate, of 4 photoresist residve remaining after ashing is carted out aller dry etching, and to strip by-products suc 35 titanium ‘oxide. AL the time ofits use, stipping may be accelerated by heating or ulirsonie waves “The resist sripper of the present invention is used usually by an immersion method, but other methods may also be ‘employed ‘Now, the present invention will be explained in further ‘detail With teference to Examples and Comparative Examples, However, it should be uoderstood that the present invention is by no means restrited to such spec Examples. EXAMPLES 1 to 27 snd COMPARATIVE EXAMPLES 1 108 Accommercially available positive photoresist was coated jn a thickness of 2 jm on a silicon wafer, followed by prebaking. Then, exposure by means of a mask pattern and ‘development with tetramethylammonium hydroxide were ‘attied out. Etching was carried out, and then plasma ashing, treatment was carried out, This silicon waler was immersed Jn stripping solution ws identified in Table 1 at 80° C. for 30 minutes, then washed with water and dried. The surface was observed by a scanning electron microscope to examine Stripping properties of the resist degenerated membrane and tipping properties of a titanium oxide Fuuther, corrosiveness of a metal was evaluated from ‘weight change and surface observation after test specimen of ‘each metal (copper, aluminum) were immersed in a resis, Stripper as identified in Table 2 at SO” C. for 30 minutes, Here, each of stripping solutions in Examples was pre pared by adding a peroxide toa quaternary ammonium salt queous solution at 30° C, removing excess water and thea fling an amine and a water soluble omganic solvent. In & mpl $ ample 6 ample 6 case of hydrogen peroxide, a 35% aqueous hydrogen per ‘oxide solution was used, andthe aqueous hydrogen peroxide Solution was added to quatemary amavonium salt aqueous Solution st 80" C. The compositions ae shows in Tables 1 Sn 2, and the rest consist of water in cach Example. Resist Stripping Properties and Titanium Oxide Stripping Properties Sipping properties ofthe resist degenerated membrane an sipping properties of he titanium oxide were evluated on the bass of the following standards: ‘©: Good stripping properties 4: Some emuined X: Mest remained Comtsiveness of Metal Cortosiveness against copper an slumiaum was evalv- sted onthe basis ofthe following standards (ao test could be conducted with respect to hydroxylamine, since it decom- Posed when contacted with sopper) ‘©: No corrosion 4: Some corrosion observed X: Severe cortenion observed Here, the following abbreviations were used wo simplify tne description in Tables 1 ad 2. IMAM: Tetramettylammonium hydroxide ‘TEAL: Tetracthylammonium hydroxide TPAH: Tetra-n-propylammonium hydroxide TMHEAI: ‘Trimetbyl-2-hydeoxyethylammonium hydrox ide "TMAC: Teramethylammonium carbonate "TPAC: Tetrasn-propylammonium earbona ‘TMIIEAC: Trimethyl-2-hydroxyethylammonium carbonate IMAC: Renzyltrimethylammonium eaebonate MAA: Tetramethylammonium acetate TMAAD: Tetrametbylammoniam periceate TMAS: Tetcamethylammonium salicylate TMAB: Tetrametbylammonium beazoate IMAL: Tetramethylammonivm lactate "TRAP: Tetra-n-propylammonim propionate BIMAA: Benzylirimethylammonium adipate MEA: Monosthanolamine HA: Hydroxylamine ‘TETA: Tricthylenetetramine HPO: Hydrogen peroxide APS: Ammonium persulfate APB: Amaonium perborate ‘APC: Ammonium percarbonate BPO: Benzoyl peroxide "TRHPO: Tertiary butyl hydroperovide NMP: N-methyl-2-pyrrotidone DMSO: Dimethyistlfoxide TABLE 1 —_Smmession on suns erie. ouster snnoniom a tem Rest "ede TMAH) Ais ‘TMAH ean TeAHLIS ‘Tea Mtn MAN) "TMAH TEAH2) MSO) TEA) pMSOUN) mA) rou) ROS) ros) AS) rae) aro)US 6,797,682 B2 1 8 TABLE 1-continved ——Smsica sine is. utemay Tein common ak Pde em Rast" mau Ta) mo) RIN ~~ Esaple 2 TWANG) BHO) "new Somme mm = Semmes = aR) Cooperive MEA)" = TETA) DMSO) NX Scope HAUG* FETA) BaBOMD—-O ‘TABLE 2 ‘omnia Siases omy Thane _Conaien ommoniom sik Feo Oe Rest oie Al ian Tanga row > Eomlets ngs) tas) 8 Eames nmin) rag) 3 Eamleie —"Thinc(sy” ros) 8 Booey Tacs) re) 8 8 Eamets TMMAC3) HRS) Palsogo 3 Eamei9 TaaMeact, Ra) NM 3 Eom “Tags” ra) 8 Emmet — Taiasany) has) 8 Eoorle Tian) Po) 3 Eamieas — TMkie) ros) 8 Eomlea mwas) iron, 8 8 Eamlei! AAG) HRS) palsogo 8 Eamplete MAAR) ROG) NMR) 3 sale 27 TWAS) TANS) FOS) ¢ Serie NAN Hoe) 3 Conprntve —— MEACI* = ax x Comnive HAG = o 4 = EXAMPLES 28 to 34 IR of the perosybydrate of teeametbylammoniam A resist stripping solution employing a peroxyhydrate of h¥#oside (KBr tablet): 1489, 1404, 949 em! 4 quaternary ammonium salt was examined in the SaM€ S>yhig peronyhydeate of tlamethy od is peroxyhydrat of tetrametbylamamoniam hydroxide tanner ain Examples 1107. The compositions and waults TH Peroxyhvdite of ltvametiplanmoniam bydroside eer omee conganic solvent were added thereto to prepare resis Production Example of peroxyhydrate of tramethylam- S¥anie “Olvent ‘mania hyceoxide is shown below, and peroxvhydates of, PPS ‘other quatemary ammonium salts were produced inthe same “ere, the following abbreviations were wed to simpli manne the description PRODUCTION EXAMPLE © 500g (0.97 mol) of a 15% tetramethylammonium hydrox ide was heated 10 80° C., and 150 g (1.54 mol) of a 35% aqueous hydrogen peroxide solution was dropwise addled thereto, The mixture was heated uatl blowing due to decom- positon of excess hydrogen peroxide disappeared, and then Water was distilled off under reduced pressure To obiaia peroxyhydrate of tetamethylammonium hydroxide. MAIL: Peroxyhy: hydroxide TEAH-H: Peroxyhydrat of tetreethylammonium hydroxide TPAH-H: Peroxyhydrate of tetra-n-propylammonium hydroxide TMHEAH-H: Peroxyhydrate of hhydroxyethylammonium hydroxide of tetramethylammoninm trimethyl-2US 6,797,682 B2 TABLES Rei ssnping Bnaple Compton (ot) reopens TAIT) wer) 8 ‘ae (7) TEEA(M) 3 wae (7) pwsouny 3 Water (8) Wats (6) ETA) DMSOUD ae (0) a TMMEATES) Wate (75) "The resist stripper of the present invention contains 10 hydroxylamine Which is unstable and is highly hazarclous, and is useful as a resist stripper showing excellent resist ‘tipping properties and titanium oxide stripping properties, ‘The entire disclosures of Japanese Patent Application No. 2000369625 filed on Nov, 30, 2000, Japanese Pateat Appli ‘ation No, 2000-399153 filed on Dec. 27, 2000, Japanese Patent Application No, 2000-99154 ied on Dec: 27, 2000, Japanese Patent Application No, 2001-070360 fled oa Mar 13,2001 and Japanese Patent Application No. 2001-123252 fed on Apr. 20, 2001 ineluding specifications, claims and > ‘summaries are incorporated herein by reference in their ‘What is claimed is: 1. A resist sripper which consists of hydrogen peroxide, quaternary ammonium salt, water and a water soluble ‘organic solved. 2. The resist stripper according to claim 1, wherein the ater soluble organic solvent sat east one member selected from the group consisting of a sulfoxide, « sulfone, an amie, a Iictam, an imidazolinone, a glycol and a glycol ther '3. The resist stripper according to claim 1, where water soluble onganic solvent is dimethyl sulfoxide 4. The resist stripper according to claim 1, wherein the ‘quaternary ammonium salt is atleast one member selected from the group comsisting of quatersary ammonium hydroxide, 8 quaternary ammonium carbonate, « quaternary ammonium carboxylate and a quaternary ammonium per- ‘oxyearboxylate '. The resist stripper according to claim 1, wherein the ‘quaternary ammonium salt is quaternary” ammonium hydroxide as 10 “Thani onde sping rope 6. The resist stripper according to claim 4, wherein the cathoxylic aed inthe quaternary ammonium carboxylate is an aromatic carboxylic aid 7. The resist stripper according to claim 6, wherein the cashoxylic aed inthe quaternary ammonium carboxylate is a least one member selected from the group consisting of| benzoic acid, salieylic acid and philic acid ‘8. The resist sripper according to claim 1, wherein the (guaterary ammonium in the quaternary amaonium satis atleast one member selected from the group consisting of & ‘etraakyl ammonium, a benzyltialkyl ammonium and an alkyL-hydeoxyalkyl ammonium, 9. The resist stripper according to claim 1, wherein the (quaternary ammonium in the quaternary ammonium satis 2 tetralky1 ammonium. 10. The resist stripper according to claim 1, wherein the hydrogen peroxide and the quatemary ammonium salt are peroxyhyelrate of the quaternary ammoniam salt. TL. The resist stripper according fo claim 1, for stripping of a titanium oxide 12, The resist stripper according to claim 1, for stripping of esist ora resist residue remaining after development of a photoresist and formation ofa circuit, 13, A resist stipper according to claim 10, wherein the peroxyhylate of « quateraary ammonium salt is peroxyby- Grate of telrametbylammonium hydroxide. 14, A resist stripper according to claim 10, whercin the peroxyhyctrate of « quaternary ammonium salt is peroxyh Grate of ttraethylammonium hydroxide,