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  • CamScanner ١٠-٢٢-٢٠٢٠ ٢٣.٥٦.٠٢

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    Ahmed Mahmoud Ahmed
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    للل

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    9 views10 pages

    CamScanner ١٠-٢٢-٢٠٢٠ ٢٣.٥٦.٠٢

    Uploaded by

    Ahmed Mahmoud Ahmed
    للل

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 10
    1- To convert the microwave signal into electrical signal that can be measured, we can use a. Guon b. Crystal c. Isolator d. Attenuator oscillator detector 2- To protect the microwave source from reflection, we can use a. Gunn b. Crystal c. Isolator © d._ Attenuator oscillator detector 3- The Crystal detector in the slotted line may be ..... to the wave a. perpendicular b. Parallel ©. 45degree d. Odegree 4- In perfect matched waveguide case the VSWR is a 1 be -1 « 0 do 5- In perfect matched waveguide case the reflection coefficient is aol b. -1 «. 0 d. © CamScanners Lise sual! rf a Z,+Z, Z,-Z, Zo+Z, Zo-Z 7- If the termination of the waveguide was an open circuit, the reflection coefficient will equal to: b. -1 « 0 do 8- “ ‘the termination of the waveguide was a short circuit, the reflection coefficient will equal to: al b. -1 « 0 dio 9- If the termination of the waveguide was a matched load, the reflection coefficient will equal to: al be -l « 0 do 10-Gunn diode is used to produce: a ac b, De © actde d. nothing 11-The ORTILE BDH R100 education: covers the microwave frequency range: a. 8-10 GHz b. 85-9.6GHz c. 9.6-9.0GHz d. 9.6-10.5GHz 12-The component which protects the Gunn-diode oscillator against load impedance variations is: a. Attenuator —b. _Isolator . Frequency d. Power meter meter bench used in the lab CamScanner + Lise &susull i-The breakdown voltage for silicon diode is a) 10 b)-10v ©) 100¥ 4) -100v 2- At forward bias, the depletion region of PN junction diode a) increase b) decrease c)vanish d) no change 3- Inn-type semiconductor, the impurity atoms are a)triavalent b) tetravalent c)pentavalent d) monovalent 4- The circuit model of the diode at reverse bias is a)short circuit —b) open circuit ov DR, 5-The de level of the half-wave rectifier output is a) V2 b)y,/2 OV /e d) Win 6 The frequency of full-wave rectifier output w.rt the input signal is a)same dyhalf eMdouble 7. zener diode is reverse biased, this circuit can be used as 2) voltage divider b) current divider) regulator 4) rectifier 8: The CB amplifier may be considered as a)voltage buffer b)current buffer —_¢) both ) none 9- The source follower amplifier has a) high 4, dylow 4, ©) unity 4, d) unity 4, 10. The phase shift between the output and input signal in CE amplifier a) 2 b) x 2 0 11- Compare BJT and FET , the ansconductane in BIT is a) higher b) lower ©) same 4) const 12. The multistage amplifier may be consists of a) CE+CE b)CB+CC o)CE+CB a)CE+CC 13: For MOSFET the output and input are in phase ,so this amplifier is a)CS b cD @) any ye J4- The body effect may be considered in a)CS b)CG cb 4) any 15-The CMOS can be used as a)n-channel b)p-channel c)both d)non 16- In saturation region of FET, the drain current depends on a) Vay D) Pog OW ns BV eg d) const 17- Compare CE amplifier and differential amplifier, the CE has a)higher 4, b)higher k, c)higher R, & 4, d) same CamScanner = is sul! Model(A) 18. The BiCMOS has a)higher 4, b)higher R, c)higher R, & A, d) same 19: In MOSFET the input offset voltage may be due to mismatch in a) Ro byw oy, 4) Vag 20- If the two resistances of inverting Op. Amp. are 10 ©, the gain will be a) 10 b)1 c) 100 40 21- The virtual ground takes place in Op. Amp. if the input is applied on the a) inventing b) noninverting) any )no input 22. To achieve an amplifier independent on 6, we put thr inut in a) inverting b) noninverting —_c) any d)non 23- To obtain gain greater than unity, we may use a) Active filter. b)H.P.F. OBPR. LPF 24- In phase shift oscillator , the Op. Amp. is connected with a) + feedback —_b) - feedback c) +or- feedback) without 25- In class-B output stage amplifier, the transistors are connected as ajeascade b) cascade o)differential _d)push-pull 26- In class-AB output stage amplifier, the conduction angle is a) x/2 b) « jax ao 21. To reduce the thermal resistance in power transistor, we can use aymetal packaging b)plastic packaging cheat sink 4) any 28. The logic expression C =AB+AB represent a) NAND b)NOR )XOR &)XNOR 1, then the value of Qis 29- In SR flip flop if R=1, b)0 ) undefined any a)l 30- The counter types are a) left counter b) right counter ¢) up counter d)down counter CamScanner 4 Lise usa Ov b)10v c) 100v d) -100v 2-At bias, the depletion region of PN junction diode asc) increase vanish 4) no change In n-type semiconductor, the impurity atoms are ZF 2) monovalent b)tetravalent —c)pentavalent 4) triavalent

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