Intemational TOR Rectifier PD-9.756 IRFP264 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repotitive Avalanche Rated * Isolated Central Mounting Hole © Fast Switching © Ease of Paralleling © Simple Drive Requirements Description Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247: package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Absolute Maximum Ratings Ip = 38A Voss = 250V Ros¢on) = 0.0752 Parameter Max. Units Ip @ Te= 25°C __ | Continuous Drain Current, Vas @ 10 V 38 p@ Te Continuous Drain Current, Ves @ 10 V 24 A tom vulsed Drain Current © 150 Pp @ Te=25°C_| Power Dissipation 280 w Linear Derating Factor 22 [wee Ves Gate-to-Source Voltage #20 Vv Ens Single Pulse Avalanche Energy ® 1000 mu lan ‘Avalanche Current © 38 A Ean Repetitive Avalanche Energy © 28 md dviat Peak Diode Recovery dvidt © 48 [Vins ty ‘Operating Junction and -55 to +150 |Tst6 Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 tbfein (1.1 Nem) Thermal Resistance Pree Parameter | Min. Typ. Max. Rac Junetion-to-Case_ = = 0.45 Paocs Case-to-Sink, Fiat, Greased Surlace = 0.24 = °cW Paix Junetion-to-Ambient = = 40 983, uy SHEETSIRFP264 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) fp en erarier_ in. | Typ, | Ma | Units Test Conditions [ienoss__[Drain-to-Source Breakdown Voltage | 250 | V_[Vas=0V, lo= 2508 Breakdown Voltage Temp. Coefficient. | — | 0.37 | — | VPC | Reference to 25°C, Ip= 1mA ae Static Drain-to-Source On-Resistance_ | — | — [0.075] Q |Vas=10V, k Vos=Ves, lo= 250A ] [ge [Forward Transconductance | = |S [Vos=50v, | = = 25 Vos=250V, Vas=0V_ loss Drain-to-Source Leakage Current = oso | -PA | veweoov vase aoe less Gate-to-Source Forward Leakage Ee — _| 100 nA 20V Gate-to-Source Reverse Leakage = = _| +100 | i Total Gate Char == T2100 [Ose Gate-lo-Souree Charge = | = [35 | nC | Vog-200v Oss Gate-to-Drain (‘Miler’) Charge — [= [ee Vos=10V See Fig. 6 and 13. @ Talon) Turn-On Delay Time — fet Voo=125V te Rise Time — {99 [=] ,,, |to=36a ‘tom Turn-Off Delay Time — {| t0] — | | Ro=4.30. te Fall Time = 92 = Ro=3.22 See Figure 10 © Lo Internal Drain Inductance —|s0] — Berean sea nH | from package ls Internal Source Inductance -— | 1a] - and center of die contact Cas Tnput Capacitance = [S400 [= Vos=0V Coss: Output Capacitance p+ [870 | — PF | Vps= 25V Crs Reverse Transfer Capacitance — [150] — f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Win. | Typ. | Max. | Units Test Conditions 1s Continuous Source Current jeseeee | ereoeeee [MOSFET symbol e (Body Diode) |g. Showing the tp Tent Pulsed Source Current eee eee aay integral reverse fy (Body Diode) © L p-njunction diode. ~—~“1s. Vsp Diode Forward Voltage Peet an! 18 V_| Ts=25°C, Is=38A, Vas=0V © te Reverse Recovery Time — | 410 [620 [ns | Ts=25°C, [-=384, Qn Reverse Recovery Charge = 57 | 86 | WC | difdt=100As @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+L0) Notes: © Repetitive rating; pulse width limited by max. junction temperature (See Figure 11) ® Vop=50V, starting T=25°O, L=1.1mH Ria=252, Ins=38A (See Figure 12) @ Igps38A, di/ots210A/us, VoosViaR)0ss, Tyst 50°C. @® Pulse width < 300 us; duty cycle <2%, 9e4I@R g — < = 5 3 2 S & 6 20ue PULSE WiOTH To = 25°C sot 109 10! Vps; Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C 2 s 30} g zg 8 gE a & Het =< 5 5 8 5 2 3 8 = Z s € & a § $ a 2 Ss Vos = Sov 2 abuse puLse wom] Se 0 Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics 985 Ip, Drain Current (Amps) E 2 IREP264 [20us PULSE WIDTH| To = 150°C ot 10 at Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150°C 35 ts se a0 jjjj i tt 25 : Be “ERE SPE os 1_| Ves = 10 oo “ee se a 020 40 60 a0 100 120 140160 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature DATA SHEETSIREP264 TOR 2000 Pia 1 Cag SHORTED| | vps = 2000 = vog7 125¥ Ds, . ‘000 ve 50Y NY g 3 Y | 3 Capacitance (pF) g g Ves, Gate-to-Source Voltage (volts) am FST CRT see FICufe 13 ‘oo 102 % 30 100 150 200° 250 Vps, Drain-to-Source Voltage (voits) Qa, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 oe comin Ey Tere WER LTMETED Eq 5 BY. Bp toy) é \ z a? 5 He g < 5 7 38 5 5 5 § § 8 | 2 8, § & * é 3: a a 2| wis 7.5 7 Te ze ge ag ag Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Sate Operating Area Forward Voltage 986Ip, Drain Current (Amps) CSCC To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 3 got 8 e & 3 | E SINGLE PULSE 2 (THERWAL RESPONSE) a0) 1 104) 1077 IREP264 Dur. 7" Voo JE ov Plsa Wet = 18 Duty Factor s 0.1% Vos 90% 10% Ves". ‘eon ‘alot Fig 10b. Switching Time Waveforms ete | Notes: 4 OUTY FACTOR, D=€4/¢2 2. PEAK Ty=Pom x Zenje * Te 10° Ot 1 10 tt, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Therma! Impedance, Junction-to-Case 987 DATA SHEETSIRFP264 L Vary tpto obtain. YOS>-———~J-——_ road i Rg my + 7.Yop Di IL [es b oota Fig 12a. Unclamped Inductive Test Circuit Vigryoss Voo Eas, Single Pulse Energy (mJ) Vos: 2500 0 orton 388 2000 SN hs — — — Fig 12b. Unclamped Inductive Waveforms charge —> Fig 13a. Basic Gate Charge Waveform Appendix A: Figure 14, Peak Diode Recovery dv/dt Test 80 7% 4m 12880 Starting Ty, Junction Temperature(°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Raguitor tf ~ Same Type as DUT 47, i rh! 1 x) sana (|) 4) eee Ut L rit; | Vos four Vos a aoa Ie * |b Ccureot Sampling Resietors Fig 1b. Gate Charge Test Circuit t Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing ~ See page 1511 Appendix C: Part Marking Information — See page 1517 International (zer] Rectifier 988