mee Xe TET TT Question Paper Code :57016 B.E/B.Tech. DEGREE EXAMINATION, MAY/JUNE 2014, Second Semester Electronics and Communication Engineering EC 6201 — ELECTRONIC DEVICES (Regulation 2013) Time : Three hours Maximum : 100 marks Answer ALL questions, PART A — (10 x 2 = 20 marks) 1. Define mass action Law. 2. What is the principle operation of a PN Junction diode in reverse bias condition? What is the need for biasing in the transistor? Draw the h parameter model for CE transistor, In which region JFET acts as a resistor and why? Differentiate between JFET and BJT. Draw the energy band diagram of metal and semiconductor before and after conduction is made. List out the applications of tunnel diode. 9. Draw the basic structure of TRIAC and its symbol. AP mn Bp w 2 10. Write down the significance of Opto coupler. PART B — (5 x 16 = 80 marks) ll. (a) Explain the theory of PN junction diode and derive its diode current equation, (16) Or () Explain and derive current components and switching characteristics of diode. (16) ww12. (a) (b) 13. (a) (b) 14. (a) (b) 15. (a) (b) Explain the characteristics of BJT in CC, CE, CB configurations and compare the performance of a transistor in different configurations. (16) Or Draw a voltage divider bias circuit and derive an expression for its stability factor. (16) (i) Discuss about FINFET and Dual Gate MOSFET. (8) (i) Explain the four distinct regions of the output characteristics of the JFET. (8) Or (i) With the help of suitable diagrams explain the working of different types of MOSFET. (10) (ii) Briefly describe some applications of JFET. (6) (i) Draw the VI characteristics of zener diode and explain its operation. (8) (ii) Write short notes on Schottky diode. (8) . Or G) Explain ‘the principle behind the varactor diode and list out its application. (8) (i) Give the details about the Laser diode. (8) Explain the operation, characteristics and applications of SCR. (16) Or Write short notes on : @ Solar cell (8) Gi) CCD. (8) 2 57016 VeTime : Three hours 10. Reg.No.:{ [| LT TTI Question Paper Code : 77109 B.E/B.Tech. DEGREE EXAMINATION, APRILIMAY 2015. Second Semester Electronics and Communication Engineering EC 6201 — ELECTRONIC DEVICES (Regulation 2013) Maximum : 100 marks Answer ALL questions. PART A — (10 x 2 = 20 marks) Consider a silicon pn junction at T = 300 K so that n,=1.5x10" cm™. The n type doping is 1x10" cm~* anda forward bias of 0.60 V is applied to the pn junction. Calculate the minority hole concentration at the edge of the space charge region. Sketch the forward bias characteristics of the pn junction diode. What do you mean by drift current? Sketch the Ebers Moll model. Assume that the ptn junction of a uniformly doped silicon n channel JFET at 7’ =300 K has doping concentrations of N, =10" em® and N,=10' cm®. ‘Assume that the metallurgical channel thickness a is 0.7 pm. Calculate the pinch off voltage. : What is channel length modulation? What isa MESFET? Expand: LASER, LDR- Sketch the V-I characteristics of an UJT. “A golar cell is a pn junction device with no voltage directly applied across the junction”, If it is so, how does a solar cell deliver power to a load? ; yy11. 12. 13. 14. (a) (b) (b) () @ Gi) (ii) @ Gi) @ Gi) @ Gi) @ @ Gi) PART B— (5 x 16 = 80 marks) Derive the expression for drift current density. (12) Determine the ideal reverse saturation current density in a silicon pn junction at T = 300 K. Consider the following parameters in the silicon pn junction’ N,=N,=10 em, 1, =1.5x10" cm, D,=2%5 cm/s, 1, =T,,=5x10"s, D,=10cm%s, ¢,=11.7. Comment on the result. 4) Or Derive the expression for diffusion current density. (2) Describe the deviatiori of V-I characteristics of pn junction diode from its ideal. 4) With relevant expressions and figures, describe Early effect. ©) Discuss the Input and Output characteristics of CE configuration. (10) Or With relevant expressions and sketch, describe h-parameter model, © Describe the working of PNP junctions. : (10) Discuss the Drain and Transfer characteristics of JFETs: (10) Explain the concept of Threshold voltage in a MOSFET. 6 J Or : Discuss the'characteristics of MOSFET. (10) Deseribe the concept of dual gate MOSFET. 6 Consider an n-channel GaAs MESFET at T = 300 K with a gold’ Schottky barrier contact. Assume the barrier height is ®,,=0.89V. The n-channel doping is N,=2x10" cm", Determine the channel thickness such that Vp=¥+0.25 V. Also N, =4.7x10"" ‘cm and e, of GaAs = 13.1. (4) Describe the working of metal-semiconductor junction. (12) > Or Write short notes on : @ @. Tunnel diode Varactor diode 2 \2 7710915. (a) Write short notes on : @ Power BIT (i) Power MOSFET Or (©) Write short notes on : @ Lop , @) cop { KCET tisgary |ee TTT Question Paper Code : 57276 B.E/B.Tech. DEGREE EXAMINATION, MAY/JUNE 2016 Second Semester Electronics and Communication Engineering i EC 6201 - ELECTRONIC DEVICES (Regulations 2013) : Three Hours Maximum : 100 Marks Answer ALL questions. PART - A (10 x2 = 20 Marks) What is meant by diffusion current ? Define storage time. etme ce A transistor has B = 150, find the collector and base current, ifl,=10mA. ‘What is meant by base width modulation ? Compare MOSFET & FET. Give some applications of JFET. Mention some advantages and disadvantages of Tunnel Diode. 6 A eR eR ee Draw the energy band diagram of Metal Semi conductor junction after contact is made. What is meant by regenerative action of SCR ? Mention some advantages and disadvantages of LCD. lad I 5 87276(a) (b) (b) (b) (@) (b) (@ (b) PART-B (Sx 16= 80 Marks) The diode current is 0.6 mA when the applied voltage is 400 mV and 20 mA when the applied voltage is 509 mV. Determine n. Assume ‘t =25 mV. (16) OR (i) Describe the action of PN junction diode under forward bias and reverse bias condition. (10) (ii) The reverse saturation of a silicon PN junction diode is 10 pA. Calculate the diode current for the forward bias Voltage of 0.6 V at 25 °C. (6) Draw the CE configuration of NPN transistor, and explain its input output characteristics with suitable diagrams, (16) OR (i) The reverse leakage current of the transistor when connected in CB configuration is 0,2 MA and it is 18 HA when same transistor is connected in CE configuration. Calculate Oj. & B,, of the transistor. (Assume 1, =30 mA) .. - (12) (i) Distinguish between h-parameter and hybrid x model. (4) Derive an expression for drain current of FET in Pinch off region with necessary diagram, (16) OR (@) Explain the construction and Principle of operation of depletion MOSFET with suitable diagram, (10) (ii) Write short notes on Dual gate MOSFET, 6 What is meant by tunnelling 7 Explain the V-I characteristics of a tunnel diode using energy band diagram. (16) OR Briefly describe about the Operation of (i) Varactor Diode (8) (ii) Laser Diode (8) Draw the basic structure of UJT and explain V-I characteristics of UIT using equivalent circuit. (16) OR Draw the V-I characteristics of (i) DIAC (8) (i) TRIAC (8) and explain its operation.ree-No:[ TT TTT TTI TIT) Question Paper Code : 71722 B.EJB.Tech. DEGREE EXAMINATION, APRIL/MAY 2017. Second Semester Blectronies and Communication Engineering EC 6201 — ELECTRONIC DEVICES (Regulations 2013) Time : Three hours Maximum : 100 marks Answer ALL questions. PART A — (10 x 2= 20 marks) Find the voltage. at which the reverse current in a germanium PN junction diode attains a value of 90% of its saturation value at room temperature. What is meant by Peak inverse voltage? Define early effect, Ifa transistor has a aof 0.97, find the value of B. Compare FET and BJT. Give the current voltage relationship of the D- MOSFET and E-MOSFET. Mention few applications of varactor diode. Define Gunn effect. Draw the basic structure of DIAC and its symbol, Define holding current, PART B — (5 x 16 = 80 marks) @ Derive an expression for PN junction diode forward and reverse currents With suitable diagram and necessary explanation, (16) Or (©) Discuss about the switching characteristics of PN junction diode with Suitable diagrams, (16)12. 13. 14. 15. () (b) (b) () (@ Draw the Eber’s Moll model for a PNP transistor and explain its significance. (8) (i) What is known as current amplification factor? Derive the relationship between the amplification factor of CE, CB and CC configuration, ®) Or @ A transistor with I =100A, and Ip=2 mA find (1) of the transistor (2) a@ of the transistor (3) emitter current I, (4) if Ip changes by 25uA and I, changes by 0.6 mA. Find the new value of f. (10) (i) Justify transistor as an amplifier. (6) () What is known as metal oxide semiconductor field effect transistor? Explain its principles of operation in enhancement mode with suitable diagram. (10) Gi) Discuss the effect of channel Jength modulation. (6) Or Explain the construction and operation of N-Channel JFET with suitable diagram. (16) Draw the V-I characteristics of zener diode and explain its operation and also brief how it can be used as a regulator. (16). Or Draw the V-I characteristics of Schottky diode and explain its operation, (16) Draw the transistor model of an SCR and describe the working principle of an SCR with V-I characteristics, (16) Or Write short notes on : i) Opto coupler. (8) qi) LCD. (8) 2 71722 Se encase ener ee eee eR eR ene: oneReg, No.: CCPC Tr Question Paper Code 97056 B.E/B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2014. Second Semester Electronics and Communication Engineering EC 6201 — ELECTRONIC DEVICES (Regulation 2013) ‘Time : Three hours Maximum : 100 marks Answer ALL questions. PART A — (10 x 2= 20 marks) 1 Define diffusion current and drift current. 2. Consider a Si PN junction at ‘T= 300K with doping concentrations of Na = 10!em-* and Na= 10% cms, Assume that m = 13 x 10” cm, Caleulate width of the space charge region in a PN junction, when a reverse bias voltage Ve =5 Vis applied. 3 Calculate the collector and emitter current levels for a BJT with a, = 0.99 and In= 20 yA. 4 Whatis the major difference between a bipolar and unipolar device? 5. Define Pinch — off voltage. 6. Draw the symbol for DUAL GATE MOSFET. 7. What are the differences between a Tunnel diode and an ordinary PN junction diode? 8. Mention the analog and digital applications of LDR, 9. Draw the two transistor equivalent circuit of an SCR. 10. Sketch the graph symbol for n-channel and p — channel MOSFET. \¥11 12. 14. 15. (b) (b) (a) (b) (a) (b) (a) (b) PART B—(5 x 16 = 80 marks) Gi) Explain the Operation of PN junction under zero voltage applied bias condition and derive the expression for built in potential barrier. (12) Gi) Calculate the built in Potential barrier in a PN junction, Consider a silicon PN junction at 300K with “ doping densities . Na = 1 x 10 ems and Na = 1 x 10% om-3 Assume ni = 1.5 x 10° em-3, (4) Or (@ Explain the basic structure of the PN junction @) (i) Write short notes on diode switching characteristics (8) Define the hybrid parameters for a basic transistor cireuit in CE configuration and give its hybrid model Or Write short notes on : (@) Early effect (8) (i) Ebers — Moll model for BJT (8) Draw a_ circuit diagram for obtaining the drain and transfer characteristics for an N channel JFET. Or Draw a circuit diagram of the cross section of a Enhancement MOSFET, * Also discuss the Drain and transfer characteristics for EMOSFET. Explain the V-I characteristics of Zener diode and distinguish between Avalanche and Zener Break downs. Or Explain the principle and operation of varactor Diode. Give the construction details of UJT & explain its operation with the help of equivalent circuits. Or Write short notes on : (@) Photo transistor (5) (ii) Opto couplers (6) (ii) CCD © with necessary sketches, 2 97056 Nt