1988 Samsung Transistor Data Book Vol 1 PDF

c8 SAMSUNG
Transistor .
Data Book (Vol. 1)
1988
• Small Signal TR
PRINTED IN KOREA
Circuit diagrams utilizing SAMSUNG andlor SAMSUNG SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD., pro-
ducts are included as a means of illustrating typical semiconductor spplications; consequently, complete information suffi-
cient for .construction purposes is not necessarily given. The information has been carefully checked and is believed to be
entirely reliable. However, no responsibility is assumed for inaccuracies: Furthermore, such information does not cO!1vey
to the purchaser of the semiconductor devices described herein any license under the patent righle of SAMSUNG andlor
SAMSUNG SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD., or others. SAMSUNG andlor SAMSUNG SEMICON·
DUCTOR & TELECOMMUNICATIONS CO., LTD., reserve the right to chenge device specifications.
r .
·.SAMSUNG SEMICONDUCTOR.
DATA BOOK LIST'
I. Semiconductor Product Guide

. II. Transistor Data Book
< Vol. 1: Small Signal TR
Vol. 2: Bipolar Power TR

Vol. 3: TR Pelfet
III. Linear IC Data Book

Vol. 1: AudioNideo
Vol. 2: Telecom/Industrial/Data Converter IC
IV. MOS Product Data Book

V. High Performance CMOS Logic Data Book
VI. MOS Memory Data Book
VII. SFET Data Book
VIII. ·MPR Data Book
IX. CPL Data Book
X. Dot Matrix Data Book
, TRANSISTOR ·DATA BOOK
VOLUME 1
KSA Series
KSB Series
KSC Series
KSD Series
KSK Ser.ies
KSR Series
2N Series
BC Series
MM Series
MPS Series
SSSeries
VOLUME 2
KSA Series
KSB Series
KSC'Series
KSD Series
BU Series
MJE Series
TIP Series
'" "
TABLE OF CONTENTS
(Volume 1)
I. QUALITY & RELIABILITy.......................................... 15
"II. PRODUCT GlHDE

1. Small Signal Transistors ........... ; ....................... :........ 31
. 2. Power Transistors .................................................... 40
3. Quick Reference Table ................ :............................ 45
III. DATA SHEETS

1. KSA Series ............................................................. 55
.2. KSB Series ............................................................. 108
3. KSC Series '............................................................. 117
4. KSD Series ......... : ..................................................... 250
5. KSK Series ............................................................. 263
6. .KSR Series .............................................................. 285
7. 2N Series ............................................................... 429
8. Be Series ............................................................... 473
9. MM Series .............................................................. 498
10. MPS Series ............................................................. 576
11. SS Series ............................................... ~ ................ 633
IV. PACKAGE DIMENSIONS .......................................... 681
V. SALES OFFICE and MANUFACTURER'S

REPRESENTATIVES ........ ~ ....: .................................... 689
TABLE OF CONTENTS
(Volume 2) .
I. QUAUTY & RELIABILITY
II. PRODUCT GUIDE

1. Small Signal Transistors
2. POWER Transistors
3. Quick Reference Table
III. DATA SHEETS

. 1. KSA Series
2. KSB Series
3. KSC .Series .
4. KSD Series
5. BU Series
6. MJE Series
7. TIP Series
IV. PACKA~E DIMENSIONS

V. SALES OFFICES.& MANUFACTURER'S
REPRESENTATIVES
ALPHANUMERIC. INDEX
1. KSA Series
Device Page Device Page Device Page
KSA473 Vol. 2 KSBl149 Vol. 2 KSC2333 Vol. 2
KSA539 55 KSBl150 Vol. 2 KSC2334 Vol. 2
KSA542 57 KSBl151 Vol. 2 KSC2335 Vol. 2
KSA545 59 KSC2340 196
KSA614 Vol. 2 . KSC2383 198
KSA634 Vol. 2 3. KSC Series KSC2500 201
KSA636 Vol. 2 Device Page KSC2517 Vol. 2
KSA640 61 KSC2518 Vol. 2
KSA642 64 KSC184 117 KSC2669 203
KSA643 66 KSC388 119 KSC2682 Vol. 2
KSA707 68 KSC815 121 KSC2688 Vol. 2
KSA708 70 KSC838 123 KSC2690/A Vol. 2
KSA709 72 KSC839 125 KSC2710 205
KSA733 74 KSC853 127 KSC2715 207
KSA812 76 KSC900 129 KSC2734 209
KSA91 0 78 KSC921 132 KSC2749 Vol. 2
KSA916 80 KSC945 134 KSC2751 Vol. 2
KSA928A 82 KSC1008 136 KSC2752 Vol. 2
KSA931 84 KSC1009 138 KSC2755 212
KSA940 Vol. 2 KSC1070 140 KSC2756 216
KSA952 86 KSC1072 144 KSC2757 219
KSA953 87 KSC1096 Vol. 2 KSC2758 222
KSA954 87 KSC1098 Vol. 2 KSC2759 226
KSA992 90 KSCl173 Vol. 2 KSC2784 230
KSA10l0 Vol. 2 KSCl187 146 KSC2785 232
KSA1013 93 KSC1188 148 KSC2786 234
KSAl142 Vol. 2 KSC1222 150 KSC2787 239
KSAl150 96 KSC1330 153 KSC2859 241
KSAl174 98 KSC1393 155 KSC3120 243
KSAl175 101 KSC1394 158 KSC3125 245
KSAl182 103 KSC1395 160 KSC3265 247
KSA1220/A Vol. 2 KSC1506 162 , KSC3488 248
KSA1298 105 KSC1507 Vol. 2 KSC5020 .Vol. 2
KSA1378 106 KSC1520 Vol. 2 KSC5021 Vol. 2
KSC1520A Vol. 2 KSC5022 Vol. 2
KSC1623 164 KSC5023 Vol. 2
2. KSB Series KSC1674 166 KSC5024 Vol. 2
Device Page KSC1695 171 KSC5025 Vol. 2.
KSC1730 173 KSC5026 Vol. 2
KSB546 Vol. 2
KSC1845 176 KSC5027 Vol. 2
KSB564A 108
KSC1983 Vol. 2 KSC5028 Vol. 2
KSB596 Vol. 2
KSC2001 179 KSC5029 Vol. 2
KSB601 Vol. 2
KSC2002 180 KSC5030 Vol. 2
KSB707 Vol. 2
KSC2003 180 KSC5031 Vol. 2
KSB708 Vol. 2
KSC2073 Vol. 2
KSB744/A Vol. 2
KSC2223 183
KSB772 Vol. 2
KSC2233 Vol. 2·
4. KSD Series
KSB794 Vol. 2
KSC2310 186
KSB795 Vol. 2
KSC2316 188 Device Page
KSB81 0 110
KSC2326A 190 KSD·73 Vol. 2
KSB811 112
KSC2330 192 KSD227 250
KSB834 Vol. 2
KSC2331 194 KSD261 252
KSBll16/A 114
ALPHANUMERIC INDEX (Continued)
Device Page Device Page Device . page

KSD28S· Vol. 2 KSR1022 287 KSR2012 . 378
KSD362 Vol. 2 KSR1003 289 iKSR2013 379
KSI;l363 Vol. 2 KSR1004 291 KSR2014 380
KSD401 Vol. 2 KSR1005 293 KSR2101 381
KSD471/A 254 KSR1006 295 KSR2102 383
KSD526 Vol. 2 KSR1007 297 KSR2103 385
KSD560 Vol. 2 KSR1008 299 KSR2104 387
KSD568 Vol. 2 . KSR1009 301 KSR2105 389
KSD569 Vol. 2 KSR1010 303 KSR2106 391
KSD794/A Vol. 2 KSR1011 300 KSR2107 393
KSP880 Vol. 2 KSR1012 306 KSR2108 395
KSD882 Vol. 2 KSR1013 307 KSR2109 .397
KSD985 Vol. 2 KSR1014 308 KSR2110 399
KSD986 Vol. 2 : KSR1191 309 KSR2111 401
KSD1020 256 KSR1102 311 KSR2112 402
KSD1021 258 KSR1103 313 KSR2113 403
KSD1616/A 260 KSR1104 315 KSR2114 404
KSD1691 Vol. 2 KSR1105 317 KSR2201 405
KSD1.692 Vol. 2 KSR1106 319 KSR2202 407
KSD2693 Vol. 2 KSR1107 321 KSR2203 409
KSD5000 Vol. 2 KSR1108 323 . KSR2204 411
KSD5001 Vol. 2 KSR1109 325 KSR2205 413
KSD5002 Vol. 2 KSR1110 327 KSR2206 . 415
KSD5003 Vol. 2 KSR1111 329 KSR2207 417
KSD5004 Vol. 2 KSR1112 330 . KSR2208 419
KSD5005 Vol. 2 KSR1113 331 KSR2209 421
KSD5006 Vol. 2 KSR1114 332 KSR2210 423
KSD5007 Vol. 2 KSR1201 333 KSR2211 425
KSD5010 Vol. 2 KSR1202 335 KSR2212 426
KSD5011 Vol. 2 KSFi1203 337. KSR2.213 427
KSD5012 Vol. 2 KSR1204 339 KSR2214 428
KSD5013 Vol. 2 KSR1205 341
KSD5014 Vol. 2 KSR1206 343
KSD5015 Vol. 2 KSR1207 345 7. 2N Series
KSD5016 Vol. 2 KSR1208 347
KSD5017 Vol. 2 KSR1209 Device Page
349
KSR1210 351 2N3903 429
KSR1211 353 2N3904 430
5. KSK Series KSR1212 354 2N3905 432
Device Page KSR1213 355 2N3906 433
KSR1214 356 2N4123 4.35
KSK30 263 KSR2001 357 2N4124 436
KSK65 267 KSR2002 359 2N4125 437
KSK117 270 KSR2003 361 '. 2N4126 438
KSK123 274 KSR2004 363 / 2N4400 439
KSK161 277 KSR2005 365 2N4401 441
KSK211 281 KSR2006 367 2N4402' 442
KSR2007 369 2N4403 443
6. KSR Series KSR2008 371 2N5086 445
KSR2009 373 2N5087 447
Device Page KSR2010 375 2N5088 448
KSR2011 377 2N6089 451
I KSR1001
I 285 I
ALPHANUMERIC INDEX (Continued)
Device Page Device Page Device Page

2N5209
2N5210
452
453
I. BU807
I Vol. 2
I MMBT2222
MMBT2222A
523
525
2N5400 454 10. MJE Series MMBT2484 526
2N5401 455 MMBT2907 527
2N5550 Device Page MMBT2907A 529
457
2N5551 458 MJE1.70 Vol. 2 MMBT3903 530
2N6427 460 MJE171 Vol. 2 MMBT3904 531
2N6428 462 MJE172 Vol. 2 MMBT3906 533
2N6428A 463 MJE180 Vol. 2 MMBT4123 535
2N6515 464 MJE181 Vol. 2 MMBT4124 536
2N6516 466 MJE182 Vol. 2 MMBT4125 537
2N6517 467 MJE200 Vol. 2 MMBT4126 538
2N6518 468 MJE21 0 Vol. 2 MMBT4401 539
2N6519 469 MJE340 Vol. 2 MMBT4403 541
2N6520 470 MJE350 Vol. 2 MMBT5086 543
MJE700 Vol. 2 MMBT5087 545
8. Be Series MJE701 Vol. 2 MMBT5088 546
MJE702 Vol. 2 MMBT5089 549
Device Page MJE703 Vol. 2 MMBT5401 550
BCW29 473 MJE800 Vol. 2 MMBT5550 552
aCW30 474 MJE801 Vol. 2 MMBT6427 554
BCW31 475 MJE802 Vol. 2 MMBT6428 556
BCW32 476 MJE803 Vol. 2 MMBT6429 557
BCW33 477 MJE2955T Vol. 2 MMBTA05 558
BCW60A
BCW60B
BCW60C
BCW60D
I 478
472
480
481
MJE3053T
11. MM Series
Vol. 2 MMBTA06
MMBTA13
MMBTA14
MMBTA20
559
560
561
562
BCW61 A 482 Device Page MMBTA42 563
BCW61B 483 MMBA81C5 498 MMBTA43 564
BCW61C 484 MMDA811C6 499 MMBTA55 566
BCW61D 485 MMBA811C7 500 MMBTA56 567
BCW69 486 MMBA811C8 501 MMBTA63 568
BCW70 487 MMBA812M3 502 MMBTA64 570
BCW71 488 MMBA812M4 503 MMBTA70 571
BCW72 489 MMBA812M5 504 MMBTA92 572
BCX70G 490 MMBA812M6 505 MMBTA93 573
BCX70H 491 MMBA812M7 506 MMBTH10 574
BCX70J 492 MMBC1009Fl 507 MMBTH24 575
BCX70K 493 MMBC1009F2 . 508 \
BCX71G 494 MMBC1009F3 509 12. MPS Series

BCX71H 495 MMBC1009F4 510
BCX71J 496 MMBC1009F5 511 Device Page
BCX71K 497 MMBC1622D6 512 MPS2222 576
MMBC1622D7 514 MPS2222A 578
9. BU Series MMBC1622D8 515 MPS2907 579
MMBC1623L3 516 MPS29007A 581
Device Page MMBC1622L4 517 MPS3702 582
BU406 Vol. 2 MMBC1623L5 518. MPS3703 584
BU407 Vol. 2 MMBC1623L6 519 MPS3704 585
BU408 Vol. 2 MMBC1622L7 520 MPS3705 586
BU806 Vol. 2 MMBR5179 522 MPS3706 587
ALPHANUMER1C INDEX (Continued)
Device Page' Device Page Device Page

MPS4249 583 MPSA64 640 TIP48 Vol. 2
MPS4250 589 MPSA70 641 TtP49 Vol. 2
MPS4250A 590 MPSA75 643 TIP50 Vot.2
MPS5172 591 MPSA76 645 TIP1PO Vol. 2
MPS5179 592 MP8A77 646 TIP101 Vol. 2
MPS6513 593 MP8A92 647 TIP102 Vol. 2
MPS6'517 594 MP8~93 647 TtPl05 Vol. 2,
MPS6520 595 MPSH10 649 TIP106 Vol. 2
MPS6521 596 MPSH11 649 TIP107 Vol. 2
MPS6522 597 MP8H17 652 TtPll0 Vol. 2
MPS6523 598 MP8H20 654 TtPl11 Vol. 2
MPS6560 ' 599 MP8H24 657 TtPl12 Vot.2
MPS6562, 600 MP8LOl 660, TIPl15 Vol. 2
MPS6601 601 MPSL51 662 TIPl16 Vol. 2
MPS6602 603 TtPl17 . Vol. 2
MPS6651 604 TIP120 Vol. 2
MPS8097
13. SS Series TtP121 Vol. 2
·606
MPS8098 607 . Device Page TIP122 Vol. 2
MPS8099 609 TIP125 Vol. 2
888050 663
MPS8598 610 TtP~26 Vol. 2
SS8550 665
MPS8599 612· TtP127 Vol. 2
889011 667
MPSA05 613 TIP140 Vol. 2
SS9012 669
889013 671
SS9014 673
MP8A12 618 TIP140F Vol. 2
SS9015 675
MPSA1.3 619 TIP141 F Vol. 2
SS9016 677
MPSA14 620 TtP142F Vol. 2
S89018 679
MPSA20 621 TIP140T Vol. 2
MPSA25 622 TIP141T Vol. 2
MPSA26 624 14. TIP Series \ TtP142T Vol. 2
MPSA27 625 TtP145 Vol. 2
MP8A42
Device Page TIP146
626 Vol. 2
MPSA43 628 TtP29 Vol. 2 TIP147 Vol. 2
MPSA44 629- TIP3.0 Vol. 2 TtP145F Vol. 2
MPSA45 632 . TIP31 Vol. 2 TtP145F Vol. 2
MPSA55 634 TIP32 Vol. 2 TIP14,5F Vol. 2
MPSA56 636 TIP41 . Vol. 2 TIP145T Vol. 2
MPSA62 637 TIP42 Vol. 2 TtP146T Vol. 2
MPSA63 639 TIP47 Vol. 2 TtP147T Vol. 2
'I
.~.
QUALITY ASSURANCE and RELIABILITY PROGRAM
1. Introduction
Samsung utilizes rigorous qualification and reliability programs to monitor the integrity of its devices. All industry stan-
dard (and various non-standard) stresses are run. Testing is done not only to collect data, but also to detect trends
and product anomalies, with rectification to take place immediately (if necessary). This protects the customer from receiving
discrepant material. Careful attention is given to any manufacturing changes, both through Engineering Change Notices
and appropriate reliability stressing.
Items such as particular tests, frequency, sample sizes, acceptance criteria, and methods of stressing are detailed later
in this chapter.
2. Policy
Samsung is committed to supplying high-quality semiconductors to its consumers. All product released for general sales
has been fully tested and qualified. By meeting or exceeding normal industry standards for reliability, Samsung can con-
fidently supply products to the world that will meet customer applications and reliability standards. Of course special
programs can be run for customers who have particular requirements which are considered non-standard.
The quality organization must approve any product before it is officially qualified and sitributed. To do this most effec-
tively, fully-functional devices must pass two critical stages prior to sales. Step 1 is product evaluation; step 2 is pro-
I
duct qualification. Details are listed below .
.3. Scope
PasslFail criteria are established by the quality assurance organization. All products have specifications which apply
to then regarding reliability streSSing, periodical monitoring, and final lot disposition:
The quality department is responsible for investigating mass-produced product for sicrepancies, and enforcing correc-
tive actions. All outoging product goes through "QA-gating", where tests particularly critical to the product are accomplished.
Only when quality assurance approves a device, either through qualification or gating acceptance, is it released. Fun-
damental "no-rework" policies ensure only highly reliable material leaves the factory. Testing is done to MIL-STD 883
and MIL-STD 750 standards, with sampling done in accordance with MIL-STD 19500E and. MIL-STD 1050. Samsung
also has internal specifications where its requirements exceed those of MIL-STDs.
4. Qualification Procedures
Procedures to qualify devices are listed below. There are both general and product-specific requirements. Procedures
are detailed for new products, die-only qualifications, and package-only qualifications. The latter two are for products
andlor packages alr!;lady qualified, but where there is room for further product optimization.
I Qualification Program I
I I I I
New Process Packge
New Produce • Other
Wafer-fabrication Sub-assembly
• HTRB 1000HR • HTRB 1000HR • HTRB 500HR • Same as

• 10PL 1000HR • HTS 1000HR • TIC 200CYC. , New product
• HTS 1000HR • PCT 168HR • TIS 200CYC. Qual.
• PCT 168HR • WHTRB 1 OOOHR • PCT 168HR
• WHTRB 1000HR • T/C,T/S 200CYC. • Other as
• T/C,T/S 200CYC. applicable
• PIC 20000CYC.
• Solderability
• Other as
applicable
• DeSign, EqUipment,
Material(s), etc ....
Fig. 1. Qualification Programs.
c8 .SAMSUNG SEMICONDUCTOR 17
QUAL.TV -ASSURANCE and RELIABI'LITY-, PROGRAM
4.1 New product qualification test items
Sample ACC. Reference

No. Test Item Test Condition LTPD Note
Size 'No Method
High Temperature .. -T.=Tj(max) 48HR
1 Reverse Bias VCB=0:8XVCBO 45 10 1 for-PRT
(HTRB) 1000HRS
High Te~perature T.=Tj(max)
2 45 10 -1
Storage (HTS) 1000HRS
Operating Ufe Ta=25°C MIL·STD·750 For Small·
3 (OPL) Pc=Pc(max) 45 10 1 1026:3 Signal Device
1000HRS
Intermittent Ta=25°C MIL·STD-750
4 OPL (IOPL) Pc=Pc(max) 45 10 1 1036.3
2min/2min On/Off
1000HRS
Power Cycle Ll.Tj=125°C For
5 (PIC) " 45Sec/90Sec On/Off 45 10 1 PWRTR,
20000CVC.
Pressure Cooker Ta=121°C±2°C 48HR
6 Test (PCT) RH= 100% 15PSIG 45 10 1 for PRT
168HRS
Wet High Ta=85°C, RH=85%
7 Temperature VCB=0.8 XVCBO 45 10 1
Reverse Bias
(WHTRB) 1000HRS
-Thermal Shock_ -65°C-150°C
8 (TIS) (Liquid) 45 10 1 MIL·STD-883
5min,<10Sec, 5min , 1011
200 Cycles
Temperature Cycle -65°C-25°C-15·C \ MIL·STD-883
9 10min, 5min, 10min 45 10 1 1011
(TIC) 200 Cycles
Solder Heat Ta=245°C±5°C MIL·STD-75Q
10 Resistance t=10±1Sec 11:> N/A 0 2031
(S/H) (once with flux)
Ta=260·C±5·C MIL·STD-883
11 Solderability t=5±0.5 sec 10 N/A 0 2003
Reject is>1 0%
uncovered surface
Ta=35°C, 5% NaCI MIL·STD-883
12 Salt Atmosphere 10 N/A 0
24HRS 1009A
1500G,05ms MIL·STD-750 For
Mechanical
13 3 Times Each direction 10 N/A 0 2016 Hermeitc
Shock
of X,V and Z Axis
20G,3AxiS MIL·STD-883 For
14 Vibration f= 1 00 to 2000 cps 10 N/A 0 2007. Hermetic
for 4min, 4 cycles
2000G MIL·STD-883 For
Constant
15 X,V,Z Axis 10 N/A 0 2001 Hermetic
Acceleration
1 min for each Axis
(
R=1.5kQ MIL·STD-883
16 ESD C=100pF ,
5 N/A 0 3015
(Human Body 5 Discharge
Model) V~±1000V
c8 SAMSUNG SEMICONDUCTOR 18
QUALITY ASSURANCE 'and RELIABILITY PROGRAM .
4.2 . New process, wafer fabrication qualification
Sample ACC
No Test Item Test Condition LTPD
Size No
High Temperature Ta=Tj(max)
1 Reverse Bias (HTRB) VCB=0.8XVCBO 45 10 1
1000HRS
.-
2 45 10 1
Storage (HTS) 1000HRS
Ta=12loC±2°C
3
Pressure Cooker
Test (PCT) .
RH=100% 15 PSIG
168HRS
45 to 1
I
Ta=85°C, RH=85%
Wet High Temperature
4 VCB=0.8XVCBO 45 10 1
Reverse Bias (WHTRBj
1000HRS
-65°C""'150°C(Liquid)
5 Thermal Shock (TIS) 5min,<10sec, 5min 45 10 1
200 cycles
-65°C""'25°C""'150°C
6 Temperature Cycle (TIC). 1 Omin, 5min, 10min 45 10 1
200 Cycles
4.3 Package Sub-Assembly Qualification
Siample ACC
No Test Item Test Condition LTPD Notes
Size No
1 Reverse Bias VCB=VCBOXO.8 45 10 1
(HTRB) 500HRS
-65°C""'25°C""'150°C
Ter:nperature Cycle
2 1 Omin, 5min, 10min 45 10 1
(TIC)
200 CYCLES
Ta=121°C±2°C
Pressure Cooker Test
3 RH=100%, 15PSIG 45 1() 1
(PCT)
168HRS
-65°C""'150°C(Liquid)
4 Thermal Shock (TIS) 5min,<10see, 5min 45 10 1
200 CYCLES
260°C±5°C
Solder Heat ReSistance
5 10±1 sec 10 N/A 0
(S/H)
Once without Flux
Vibration (Variable- 100"'2000"'100Hz
6 10 N/A 0
Frequency) 20G, 5min, 5Times, X,Y,l
1500G, 0.5ms
7 Meehanial Shock (MIS) 10 N/A 0
3 Times, X,Y,l
20000G.
8 Constant Acceleration X,Y,l Axis 10 N/A 0
1 min for each Axis'
Note) • N/A: not available
'QUALITY' ASSURANCE and RELIABILITY PROGRAM
5. Product Reliability (Quality Conformance) Monitors

Samsung implements periodic testing to monitor the ongoing reliability of its products. A subset of stresses used for
qualification are run; they are seen as most critical for basic device reliability. Formally this is known as the Device Reliability
Test System, or simply as DRT.
Lot-by-Iot infant mortality reliability testing is also accomplished at Samsung. The purpose of this is to verify p'rocess
integrity ina full QA step. Formally this is, konwn as Process Reliability Testing, or more simply as PRT. Normally a
short term accelerated Ufetest and package reliability test are done, although exceptions are made in the case of special
devices.
Although Samsung scrupulously utilizes statistical controls throughout it's production process, DRT and PRT serve as
confirmation that indeed the customer does receive only high-grade units. The tables on the following give details of
DRT and PRT processing. '
Quality Conformance Program
I
I I I
(Process Reliability Test) (Infant Ufe Test) (Device Reliability Test)
• Every Fab Lot • 1 Processlmonth • Once/6 mo. per device
• HTRB .. 1 68HR • HTRB 168HR • HTR!3 1000HR

• PCT 48HR (24hr read outs) • PCT 168HR
• WHTRB 1 OOOHR
• TIC 200CYC
• TIS 200CYC .
Note: Test descriptions given on following pages.
Fig. 2. Quality Conformance Program
(PRT/DRT Product Stress Methodologies)

1~ PRT (Process Reliability Test)
Frequency: Every outgoing lot
Sample Accept.
No_ Test Item Test Condition LTPD 'Note
Size No_
1 Reverse Bias VCB=VCBOXO.B 45 10 '1
(HTRB) 168HR max
Pressure Ta=121 ·C±2·C
2 Cooker Test 100% RH, 15PSIG 45 10 1
(PCT) , 48HR I'
2. ILT (Infant Life Test) Frequency: 1 Process/month

Sample
No_ Test Item Test Condition Note
Size
1 Revers~ Bias VCB=VCBOXO.8 300 for Discrete
(HTRB) 168HR
.ciS SAMSUNG SEMICON'DUCTOR .20

~, DRT (Device Reliability Test)
No•. Test Item test Condition Sale LTPO* ''':-:''''''

No.
Note
. High Temperature Ta=Tj(max)

5 0
1 Reverse Bias (HTRB) VCB=VCBOXO.8 45
10 1
1000HRS
T.=121°C±2°C
Pressure Cooker 5 0
2 RH=100%, 15PSIG 45
Test (PCT) 10 1
168HRS
Ta=85°C, RH=85%
Wet High Temperature 5 0
I
3 VCB=0.8XVCBO 45
Reverse Bias (WHTRB) 10 1
1000HRS
-65°C-25°C-150°C
5 0
4 Temperature Cycle (TIC) 10min, 5mln, 10min 45
10 1
200 Cycles
-65°C-150°C(Liquid)
5 0
5 Thermal Shock (T/S) 5min,<10sec, 5min 45
10 1
200 Cycles
* LTPD 5: S Grade Units LTPD 10: A,B Grade Units.
6. Reliability Tests
The test run by the quality department are accelerated tests, serving to model "rllal world" applications through boosted
temperatures, voltages, and/or humidities. Accelerated conditions are used to derive device knowledge through means quicker
than that of typical application situations. These accelerated conditions are then used to assess differing failure rate mechanisms
that correlate directly with ambient conditions. Following are summaries of various stresses (and their conditions) run by
Samsung on discrete and integrated devices.
High Temperature Reverse Bias (80% max. BVCBO, 150 ° C, static)

For this test, device integrity is checked through stressing of the main blocking junction at an elevated temperature and
voltage. Overall product stability is investigated tl)rough leakage current monitoring; low leakage indicates good integ~ity.
Intermittent Operating Life (PMAX, 25°C, 2 min on/2 min off)

This test is normally applied to scrutinize die bond thermal fatigue. A stressed device undergoes an "on" cycle, where there
is thermal heati[lg due to power dissipation, and an "off" cycle, where there is thermal cooling due to lack of inputted po.wer.
Die attach (between die and package) and bond attach (between wire and die) are the critical areas of concern.
Wet High Temperature Reverse Bias (80% max. BVCBO, 85°C, 85% R.H., static) or (Vcc=Vcc(typ), 85°C, 85.% R.H,
static) .
Wet High Temperature Reverse Bias Test is used to accelerate failure mechanisms by applying static bias on alternate pins
at high temperature and humidity ambient (85°C/85°C R.H.): This test checks for resistance to moisture penetration by
using an electrolytic principle to accelerate corrosive mechanisms. .
Pressure Cooker Test (Unbiased, 121°C, i 5 PSIG, 100% R.H:)

The Pressure Cooker Test checks for resistance to moisture penetration. A highly pressurized vessel is used to force water
(thereby promoting corrosion) into packaged devices located ·within the vessel.
High Temperature Storage (Unbiased, 150°C)

High Temperature Storage is utilized to test for both package and die weaknesses. For example, sensitivities to ionic con-
tamination and bond integrity are closely scrutinized.
QUALITY ASSURANCE and RELIABILITY 'PROGRAM
Temperature Cycling (Unbiased, -65°C to +150°C, air) .

This stress uses a chamber with alternating temperatures of -65°C and+1'50°C (air ambient) to thermally cycle devices
within it. No bias Is applied. The cycling checks formechanical integrity of the packaged \levice, in particular bond wires
and die attach, along with metalipolysilicon microcracks.
Thermal Shock (Unbiased, -65°C to +150°C, liquid)

This stress uses a chamber with alternating temperatures of - 65 ° C to + 1 50 ° C (liquid ambient) tg thermally cycle devices
within it. No bias is applied. The cycling is very rapid, and primarily checks for die/package compatibility.
Resistance to Solder Heat (Unbiased, 26.0°C, 10 sec)

Solder Heat ReSistance is performed to establish that devices can Withstand the thermal effects of solder dip, soldering
iron, or solder wave operations.
Meehan.ical Shock (Unbiased, 1500g, Pulse=0.5msec)

This test determines the suitability of a device to be used in equipment where mechanical "shocks" may occur. Such shocks
ersult from sudden o( abrupt changes produced by rough (non-standard) handling, transportation, or field operations.
Variable Frequenc~ Vibration (Unbiased, Rarige=100 to 2000.Hz) .

Variable Frequency Vibration is done to model the effects of differential vibration in the specified range. Die attach and bon-
ding integrity are particularly stressed, testing the mechanical soundness of device packaging.
Constant Acceleration (Unbiased, 10kg to 20kg)

This is an accelerated test designed to indicate types or modes of structural and mechanical' weaknesses not necessarily
detectable in· Mechanical Shock and Variable Frequency Vibration stressing.
7: Failure criteria
Parameter' Symbol Unit SCOPE Min. Max.
Collector Cut-off Current ICBO "A COMMON - USLX2
Emitter Cut-off Current ICEO "A COMMON - USLX2
- HFE(min)<500 I.V.XO.S I.V.X1.2
HFE Variation Ratio HFE - HFE(min);;'500 I.V.XO.7 ·I.V.X1.3
I
.- . HFE(min);;'1000 I.V.,XO.6 I.V.X1.4
Collector-Emitter Saturation Voltage VCE(sat) mV COMMON LSL USL
Base-Emitter Saturation Voltage VBE(sat) mV COMMON LSL USL
Thermal, Resistance hoVBE mV Power LSL USL
Noise NF.,Nv dB Low Noise - USLX1.5
Note 1) USL: Upper Specification Limit 2) LSL: Lower Specification Limit 3) I.V.: Initial Value
8. Relative Stress Comparisons

Many strel!ses are run at Samsung on many different devices. Through both theoretic.aI and actual. results, it was clearly
determined' which stresses were most effective. Alslo established were the stresses which weren't fully effective.
Comparisons have been·made on the basis of defects able to be determined, efficiency in detection, and. cost. For the reader's
benefit, Samsung provides the results of its conclusions on the following pages.
ciS SAMSUNG SEMICONDUcrOR 22

QUALITY ASSURANCE and .RELIABILITY PROGRAM
Comparison of Reliability Test Methods
Test
Defect EffeetlYenss Cost Remarks
Method
Internal Lead Structure .
Visual Metallization
Inspection Oxide Film Slightly This method of screening must be
Foreign Particles Good Inexpensive performed for high reliability
Die Bond to Moderate devices, Cost is affected by the
Wird Bond degree -of visual inspection
Contamination
•
Corroded Substrate
Infrared ray Design(thermai) Very Good Expensive' For use in design evaluation only
Die Bond Extremely Good Advantage to using this
Lead Structure(Gold) Good screening method 'lies in the
Foreign Particles Good ability to test die frame/
Manufacturing Good Moderate header bonding, and to be able to,
Radiography (~ross Error) ,Good perform inspection after sealing
Seal Good However, some materials t?eing
Package Good transparent to X-rays (for example,
Contamination Good AI and Si) are not able to be analyz-
ed, The use of the complex test
system results in cost six times that
of visual inspection.
Electricai stability
High Metallization
Temperature Bulk Silicon Good Very This is a highly desirable screening
Storage Corrosion Inexpensive method
Package
Seal
Temperature Die Bond Good Very This screening
"
method is one of
Cycling Wire Bond Inexpensive the most effective for use
Cracked Substrate
Thermal Mismatching
Package While this screening method'is
Seal similar to 'temperature cyc~ng,
Thermal' Die Bond Good Inexpensive it enables high stress levels as
Shock Wire Bond well, It is probably equal to the
Cracked Substrate temperature cycling method.
Thermal Mismatching
Lead Str!lcture Doubt exists as to the effectiveness
Constant Die Bond Good Moderate of screening aluminum wires
Accelertion Wire Bond with stress levels in the range of
Cracked Substrate 0"'20,000 G
Shock Lead Structure Fairly Poor Moderate Drop shock testing is thought to
(Without be inferior to 'constant acceleration
Monitoring) methods, However, the pneupactor
shock test is more effective, Shock
test is a destructive test method,
Shock Particles Fairly Poor Visual inspection or radiography
(With Intermittent Short Failry Good Expensive is more desirable for detection of
Monitoring) Intermittent Open Fairly Good particles
QUALITY ·ASSURANCE and RELIABILITY ·PROGRAM
Comparison of Reliability Test Methods (continued)
Test
Defect Effectlvenss Cost Remarks
Method
Vibration Lead Structure
Fatigue Package This test is destructive
Die Bond Fairly Poor Expensive and without merit.
Wire Bond
Cracked Substrage
Variable Package
Frequency Die .Bond
Vibration Wire Bond Fairly Poor Expensiv!'l
(Without Substrate
Monitoring)
Variable Foreign Particles Fairly Good The effectiveness of the method for
Frequency Lead Structure Good Very detecting particles depends on the
Vibration Intermittent Open Good Expensi)le type of particle
(Without·
Monitoring)
Random Package This screening method is more
Vibration Die Bond Good Expensive effective than variable frequency
(Without Wire Bond vibration(without monitoring), when
Monitoring) Substrate used with equipment intended for
space vehicle operation, although it
is more expensive.
Random Foreign Particle Fairly Good
Vibration Lead Structure Good Very This· is one ·of the most expensive
(With Intermittent Open Good Expensive screening methods
Monitoring)
Vibrational Foreign Particles Good Expensive
Noise
Radioisotope Package Good Moderate This screening method is effective
Leak Test Seal for detecting leakage in the range
1 OE6'" 1OE12 atm. mllsec
Helium Package Good Moderate This screening method is effective
Leak Test Seal for detecting leak in the range
1 OE6"'1 OE12 atm. ml/s.ec
Gross Package Good Inexpensive Effectiveness is dependent upon
Leak Test Seal volume. Testing is possible for
detecting leaks above 10E-3 atm.
ml/sec.
High Voltage Oxide Film Good Inexpensive Effectiveness Depends on structure
Test
Insulation Lead Structure
Resistance Metallization Fairly Good Inexpensive
Contamination
Intermittent Metallization
Operation Bulk Silicon
Oxide Film
. Inversion/Channeling Good Expensive· Probably about the same as AC
Design Parmeter operating life
Drift Contamination c
QUALITY· ASSURANCE and RELIABILITY PROGRAM
Test
Defect Effectivenss Cost Remarks
Method
Metallization
Bulk Silicon
Oxide Film
AC Inversion/Channeling Very Good Expensive
Operation Design Parmeter
Drift Contamination
DC Basically the Same Good Expensive The AC operation life method is
Operation as Intermittent more effective for any failure
Operation mechanism
High Same as AC Extremely Good Very Failures are accelerated by
Temperature Operation Ufe Expensive temperature. This is probably
AC Test the most expensive and one of the
Operation most effective screening methods.
High
Temperature Inversion Fairly Poor Expensive
Reverse /Channeling
Bias
9. Reliability Test Results

Extensive test results have been compiled through long term reliability monitoring (DRT) of devices. Current and historical
data is entered into Samsung's Reliability Newtork, SRN. Thus, past performance of a device or it's family, assemblyevalua-
tion results, manufacturing change reliability results, etcetera, can all be seen via computer through SRN.
Results included in this manual are representative of products stressed, and contain data fro mthe past year. Data is sum-
marized from both die and packalle tests, on five critical stresses. Failure rates for'long term life testing are in FITs, which
are calculated using Arrhenius' Equation. (Arrhenius' Equation is summarized in the Appendix section). Samsung's failure
rates are well below 50 FITs, which is acknowledged by customers and competitors alike as among the industry's elite.
9.1 Long Term Life Test Results
~
Test Item Steady State Operation Life High Temperature Storage Life
Test Condition Ta=T,(max_) Vca=VcBoxO.8 Ta =1l!5°C, 150°C
1000 HR~ 1000 HRS
Number Number Failure Number Number' Failure
Application of of Rate of of Rate
Samples Failures (FIT) Samples Failures (FIT)
Small Signal 1228 4 8 430 2 14
TR
Power 1056 16 33 708 1 6
Note 1) FIT: Failure in time or failure unit; represents the number of failures expected per 10' (one billion) device
hours (at 55°C).
2) TR: Transistor
QUALITY .' A,SS~RANCE ·and RELIABILIT:Y"·PROGRAM
. .. . , " ,"- -, ,
9.2 Eriv.ironmental Test Resutls

Test Item High Temp/High Humidity Pressure Cooker Thermal Shock
S TR
Application
Small Signal
Power
Number Number
of
880
346
of
Sam'ples Failures
2
1
Failure Number Number
Rate
(%1
1KHRS)
0.23
0.29
of of
Samples Failures
1020
404
12
6
Failure
Rate
(%1
168HRS)
1.2
1.5
of
85°C, 85% R.H, VCBO)( 0.8
Number Number
1263
of
Samples Failures
576
0
1
Failure
Rate
(%1
200CYC)
0.17
0
10. Product' Outgoing Quality Levels

The quality of Sam sung products reaching customers has improved steadily over the years. Nearly .on qrder of magnitude
reduction in outgoing product. PPM levels has been achieved from 1 983· 7. Results can be seen below ..
. . .
Average Outgoing Quality, or AOQ, is measured by the Quality Assurance Department. Prior to release, product is sam'pled
according to MIL·STD 1050. Both electrical and visual/mechanical inspections occur. If inspection standards are met, pro·
duct is approved for sales. Depending on the nature of the failure(s), rejected samples can cause an entire lot to be 100%
tested and/or inspected, re·worked to screen out defective devices, or scrapped.
Electrical testing is typically done to product specification limits, guardbanded by a fixed percentage. Visual/mechanical in·
spection is performed to check for key package, marking, and lead parameters. (More extensive details are provided in Chapter
3, Assembly process control)
Although Samsung's AOQ levels are acceptable, efforts are constantly underway to reduce the figures (thereby increasing
outgoing quality). ' .
Enhanced focus on statistical process control in the manufacturing operation should help Samsung achieve it's goal of 50
PPM in 1988. .
Samsung Product Electrical AOQ levels.

(in PPM)
Product Family 1983 1984 1985 1986 19~7

5mBII-~ignal
526 509 308 150 45
Transistor
Power· Transistor 968 1289 578 664 '101
Samsung Product Visual/Mechanical AOQ Levels

(in PPM)
Product Family 1983 1984 ·1985 1986 1987

Small-Singal
362 816 596 129 57
Transistor
Power Transistor 452 1589 1297 i96 140
.c8 SAMSUNG S~MICONDUCTOR 26

3000,-~--------------~--------------------------------,
D.
2500
2000
D.
1500
(PPM)
1000
500
O~--------~------~--------~------~--------~--~
'84 '86
'83 '85 '87
(YEAR)
Note: Total=Electrical + Visual/Mechanical

SIS TR=Smail Signal Transistor o--S/STR
PWR TR=Power Transistor
D ...... ·PWRTR
Fig. 3. Total AOQ Levels
c8 SAMSUNG SEMICONDUCTOR. 27
.. NOTES
TRANSISTORs FUNCTION GUIDE
1. SMALL SIGNAL TRANSISTORS

1.1 General Purpose Transistors
1.1.1 80T-23 Type Transistors
Condilion hFE Condition VeE (..I~ VIE (..I) (V) Condition fr(MHZ)
Device and Polartly (Marking) 1---
VCEO Ie VeE Ie Ie Is VeE(IIt) VIE (..I) VeE Ie
NPN PNP (V) (A) (V) (mA) MIN MAX (mA) (mA) MAX MAX (V) (mAl MIN n'P
MMBTA06(lG) MMBTA56(2G) 80 0,5 1 100 50 100 10 0.25 2 10 100

MMBTA05(lH) MMBTA55(2H) 60 0.5 1 100 50 100 10 0.25 2 10 100
MMBT2907A(2F) . 60 0.6 10 150 100 300 500 50 1.6 2.6 20 50 200
KSC1623(C1X) KSA812(Dl X) 50 0.1 6 1 90 600 100 10 0.3 1 6 10 250
BCW69(H1) 45 0.1 5 2 120 260 10 0.5 0.3
BCW70(H2) 45 0.1 5 2 215 500 10 0.5 0.3
BCW71 (Kl)
BCW72(K2)
BCl.(70G(AG)
BCX70H(AH)
45
45
45
45
0.1
0.1
0'.1
0.1
!?
5
5
5
2
2
2
2
110
200
120
180
220
450
220
310
50
50
50
50
2.5
2.5
1.25
1.25
0.55
0.55
1.05
1.05
5
5·
5
5
10
10
10
10
125
125
300
300
I
BCX70J(AJ) 45 0.1 5 2 250 460 50 1.25 0.55 1.05 5 10 125
BCX70K(AK) 45 0.1 5 2 380 630 50 1.25 0.55 1.05 5 10 125
BCX71 G(BG) 45 0.1 5 2 120 220 50 1.25 0.55 1.05
BCX71H(BH) 45 0.1 5 2 180 310 50 1.25 0.55 1.05
BCX71J(BJ) 45 0.1 5 2 250 460 50 1.25 0.55 1.05
BCX71K(BK) 45 0.1 5 2 380 630 50 1.25 0.55 l.05
MMBA811C5(C5) 45 0.05 3 0.5 135 270 20 2 0.3 6 1 75
MMBA811C6(C6) 45 0.05 3 0.5 200 400 20 2 0.3 6 1 75
MMBA811C7(C7) . 45 0.05 3 0.5 300 600 20 2 0.3 6 1 75
MMBA811C8(C8) 45 0.05 3 0.5 450 900 20 2 0.3 6 1 75
MMBC1623L3(L3) MMBA812M3(M3) 40 0.1 6 1 60 120 30 3 0.5
MMBC1623L4(L4) MMBA812M4(M4) 40 0.1 6 1 90 180 30 3 0.5
MMBC1623L5(L5) MMBA812M5(M5) 40 0.1 6 1 135 270 30 3 0.5
MMBC1623L6(L6) MMBA812M6(M6) 40 0.1 6 1 200 400 30 3 0.5
MMBC1623L7(L7) MMB.A812M7(M7) 40 0.1 6 1 300 600 30 3 0.5
MMBT2222A(1 P) 40 0.6 10 150 100 300 500 50 1.6 2.6 20 20 300
MMBT2907(2B) 40 0.6 10 150 100 300 500 50 1.6 . 2.6 20 50 200
MMBT3903(1Y) 40 0.2 1 10 50 150 50 5 0.3 0.95 20 10 250
MMBT3904(1 A) MMBT3906(2A) 40 0.2 1 10 100 300 50 5 0.3 0.95 20 10 300
MMBT4401(2X) MMBT4403(2T) 40 0.6 1 150 100 300 500 50 0.75 1.2 10 10 250
MMBTA20(1C) MMBTA70(2C) 40 0.1 10 5 40 400· 10 1 0.25 10 5 125
MMBC1622D6(D6) 35 0.1 3 0.5 200 400 100 10 0.3 6 1 100
MMBC1622D7(D7) 35 0.1 3 0.5 300 600 100 10 0.3 6 1 100
MMBC1622D8(D8) 35 0.1 3 0.5 450 900 100 10 0.3 6 1 100
BCW60A(AA) BCW61A(BA) 32 0.1 5 2 120 220 50 1.25 0.55 1.05 5 10 125
BCW60B(AB) BCW61B(BB) 32 0.1 5 2 180 310 50 1.25 0.55 1.05 5 10 125
BCW60C(AC) BCW61C(BC) 32 0.1 5 2 250 460 50 1.25 0.55 1.05 5 10 125
BCW60D(AD) BCW61D(BD) 32 0.1 5 2 380 630 50 1.25 0.55 1.05 5 10 125
MMBT2222(1 B) 30 0.6 10 150 100 300 500 50 1.6 2.6 20 20 200
KSC2859(E1X) KSAl182(F1X) 30 0.5 1 100 70 240 100 10 0.25 6 20 200
. MMBT4123(5B) MMBT41 25(ZD) 30 0.2 1 2 50 150 50 5 0.3 0.95 20 10 250
KSC3265(K1X) KSA 1298(J1 X) 25 0.8 1 100 100 320 500 20 0.4 5 10 120
MMBC1 009Fl (F1) 25 0.05 3 0.5 30 60 10 1 0.3 6 1 150
=8 SAMSUNG SEMICONDUCTOR
31
·TRANSISTORs FUNCTiON GUIDE
SOT-23 Type Transistors (Continued)
VCE (..I~ VaE (oal) (V) fr (MHz) .

. Device and Polarlly (Morlclng)
Condition hFE Condition
~n~
VCEO Ic· VCE Ic Ic la VCE(oal) V.. (oal) VCE Ic
NPN PNP (V) (A) (VI (mA) MIN MAX (mA) (mA) MAX MAX (VI (mA) MIN TYP
~MBC1009F2(F2) 25 0.05 3 ·0.5 40 80 10 1 0.3 6 1 150·

MMBC1009F3(F3) 25 0.05 3 0.5 60 120 10 1 0.3 6 1 150
MMBC1(109F4(F4) 25 0.05 3 0.5 90 180 10 1 0.3 6 1 150
MMBC1009F5(F5) 25 0.05 3 0.5 135 270 ,0 1 0.3 6 1 150
MMBT4124(ZC) MMBT4126(C3) 25 0.2 1 2 120 360 50 5 0.3 0.95 20 10 300
BCW29(Cl) 20 0.1 5 2 120 260 10 0.5 0:3
BCW30(C2) 20 0.1 5 2 215 500 10 0.5 0.3
BCW31 (01) 20 0.1 5 2 110 220 10 0.5 0.3
BCW32(02) 20 0.1 5 2 200 450 10 0.5 0.3
BCW33(03) 20 0.1 5 2 420 800· 10 0.5 0.3
1.1.2 TQ-92S Type Transistors
Condition hFE Condilion VCE (sal), V.. (oal) (V) Condition fr(MHz)
Device and Polarity
VCEO Ic VCE Ie Ic la VCE(oal) VaE(oal) ~CE Ic
NPN PNp· (V) (A) (V) (mA) MIN MAX (mA) (mA) TYP MAX TYP MAX (V) (mA) MIN TYP
KSAl150 20 0.5 1 100 40 400 500 50 0.3 0.4 1 1.3 6 10

KSA1378 25 0.3 1 50 ('0 400 300 30 0.35 0.6
KSB81 0 25 0.7 1 100 70 400 700 70 0.25 0.4 0.95 1.2 6 10 50 ·160
KSB811 25 1 0 100 70 400 1000 100 0.5 1.2 6 10 110
KSC2710 20 0.5 1 100 40 400 500 50 0.18 0.4
KSC3488 25 0.3 1 50 70 400 300 30 0.14 0.4
KS01020 25 0.7 1 100 70 400 700. 70 0.2 0.4 0.95 1.2 6 10 50 170
KS01021 30 1 1 100 70 400 1000 100 0.5 1.2 6 10 130
1.1.3 TQ-92 Type Transistors
Condilion hFE Condilion VCE (sal), v.. (sal) (V) ~~ fr (MHz)

Device and Polarlly
VCEO Ic VCE Ic Ie la VeE (sal) VaE(sal) VCE Ie
NPN PNP (VI (A) (V) (mA) MIN MAX (mA) (mA) MAX MAX (V) (mA) MIN TYP
MPSA06 MPSA56 80 0.5 1 100 50 100 10 0.25 2 10 100

MPS8099 MPS8599 80 0.5 5 1100 300 100 10 0.3 5 10 150
KSC2003 KSA954 80 0.3 1 50 90 400 300· 30 0.6 1.2 6 10 50 100
KS01616A KSB1116A 60 1· 2 100 135 400 1000 50 0.3 1.2 2 100 70
KSC1008 KSA708 60 0.7 2 50 40 240 500 50 0.7 1.1 10 50 50
. MPS2907A 60· 0.6 10 150 100 300 500 50 1.6 2.6 20 50 200
MPS8098 MPS8598 60 0.5 5 r 100 300 100 10 0.3 5 10 150
MPSA05 MPSA55 60 0.5 1 100 50 100 10 0.25 2 10 100
KSC2002 KSA953 60 0.3 1 .50 90 400 300 30 0.6 1.2 6 10 50 100
KSC853 KSA545 60 0.2 1 50 40 400 150 15 0.5 1.2
KSD1616 KSB1116 50 1 2 100 135 600 1000 50 0.3 1.2 2 100 70 100
KSC1072 KSA707 45 0.7 2 50 40. 240 500 50 0.7 1.1
KSC815 KSA539 45. 0.2 1 0.05 40 240 150 15 0.5 1.2
889014 889015. 45 0.1 5 1 60 1000 100 5 0.3 1 5 10 150 270
c8 SAMSUNG SEMICONDUCTOR
32
TO-92 Type Transistors (continued)
Device and Polarlly

Condition hFE Condition VCE (sal~ V.., (sal) (V)
~~ IT (MHz)
VCEO Ic VCE Ic Ic la VCE (sal) VaE (S.I) VCE Ic
NPN PNP (V) (A) (V) (mA) MIN MAX (mA) (mA) MAX MAX (V) (mA) MIN TYP
MPS6602 40 1 1 500 50 1000 100 0.6 10 50 100

2N4401 2N4403 40 0.6 1 150 100 300 500 50 0.75 1.2 10 20 200
MPS2222A MPS2907 40 0.6 10 150 100 300 500 50 1.6 2.6 20 20 300
2N4400 2N4402 40 0.6 1 150 50 150 500 50 0.75 1.2 10 20 200
2N3903 2N3905 40 0.2 1 10 50 150 50 5 0.3 0.95 20 10 250
2N3904 2N3906 40 0.2 1 10100 300 50 5 0.3 0.95 20 10 300
MPS6513 MPS6517 40 0.1 10 2 90 180 50 5 0.5
MPSA10 40 0.1 10 5 40 400 10 5 125
MPSA20 MPSA70 40 0.1 10 5 40 400 10 5 125
KSC1330 40 0.1 6 1 70 400 30 3 0.5 6 10 30Q
KS0471A
MPS3705
MPS3704
MPS2222
MPS3703
30
30
30
30
1
0.6 5
0.6 2
1 100 70
50 30
50 100
0.6 10 150 100
400 1000 100
150
300
300
50
100
500
5
5
50
0.5
0.25
1.6
1.2
2.6
6
5
2
20
10
50 100
50 100
20 250
130
I
KSC921 30 0.1 10 2 40 240 10 1 0.6 10 1 100 250
KSC839 30 0.1 12 2 40 400 10 1 0.4 10 1 80 200
SS9011 30 0.03 5 1 28 198 10 1 0.3
SS8050 SS8550 25 1.5 100 85 300 800 80 0.5 1.2 10 50 100 190
KSB564A 25 1 100 70 4QO 1000 100 0.5 1.2 10 10 110
MPS6601 MPS6651 25 1 500 50 1000 100 0.6 10 50 100
MPS3702 25 0.6 50 60 300 50 50 0.25 50 100
MPS6580 MPS6562 25 0.5 500 50 200 500 50 0.5 5 10 60
KS0227 KSA642 25 0.3 50 70 400 300 30 0.6
MPS5172 25 0.1 10 100 500 10 l' 0.25 2 120
KSC184 KSA542 25 0.05 1 40 400 20 2 0.3 6 1 100
MPS3706 20 0.6 50 30 600 100 5 1 2 50 100
KS0261 KSA643 20 0.5 100 40 400 500 50 0.4 1.3 1
SS9013 SS901.2 20 0.5 50 64 202 500 50 0.6 1.2 1
1.1.4 TO-92L Type Transistors
Condition hFE Condition VCE (sal), VaE (sal) (V) Condition IT (MHz)
Device and Polarity ~,-- 1---
VCEO Ic VCE Ic Ic la VCE(sal) VaE(SlI) VCE Ic
KSC2326A KSA928A 30 2 2 500 100 320 1500 30 2 2 500 120

KSC2331 KSA931 60 0.7 2 50 40 240 500 50 0.7 1.2 10 50 100
KSC2500 10 2 1 500 140 600 2000 50 0.5 1 500 150
•• SA~SUNG ,SEMICONDUCTOR
cas •
33
.,TRANSISTORs FUNCTION GUIDE
1.2 Low Noise Transistors

1.2.1S0T-23 Type Transistors
Condition hFE Condition Ve.....~VI
Device and Polarlly (Markl"" .
CondlUon VCEO Ic VeE Ie Ic I. Veaaall
NPN PNP MAX Frequency (V) (AI (V) (mAl MIN MAX (mAl (mAl MAX
MMBT6428(lK) 4 Audio, 50 0.2 5 0.1 250 650 100 5 0.6

MMBT6429(1 L) 4 AUdio 45 0.2 5 0.1 500 1250 100 5 0.6
MMBT2484( 1U) 3 Audio 60 0.05 5 1 250 1 0.1 0.35
MMBT5086(2PI 3 Audio 50 0.05 5 0.1 150 500 10 1 0.3
'MMBT5088(10) 3 Audio 30 0.05 5 0.1 300 900 10 1 0.5
MMBT5087(20) 2 Audio 50 '0.05 5 0.1 250 800 10 1 0.3
MMBT5089(1 R) 2 Audio 25 0.05 5 0.1 400 1200 10 1 0.5
1.2.2 TO-92S Type Transistors

Devlca and Polarlty(Marklngl NF(dBI VelO Ie Condition hFE Condition V..(aall Condilion I,(MHzI
Condilion Vee Ie Ie Is VeE Ie
NPN PNP TYP Frequency (VI (AI (VI (mAl MIN MAX (mAl (mAl MAX (V) (mAl MIN TYP
KSAl175 '6 Audio 50 0.15 6 1 40 700 100 10 0.3 6 10 180
KSC2785 4 Audib 50 0.15 6 1 40 .700 1'00 10 0.3 6 10 300
Audio = 10Hz to 15. 7KHz
1.2.3 TO-92 Type Transistors

;
Condillon hFE Condillon ,saturation Voitegalv)

Device and Polarity NF(dBI
Condillon VCEO Ic VCE Ic Ie I. Vca..11
NPN 'PNP TYP Frequency (V) (AI (V) (mAl MIN MAX (mAl (mAl MAX
2N6428· 6 Audio 50 0.2 5. 0.1 250 650 100 5 0.6
2N4123 6 Audio 30 0.2 1 2 50 150 50 5 0.3
2N4125 5 Audio 30 0.2 1 2 50 150 50 5 0.4
2N4124 5 Audio 25 0.2 1 2 120 360 50 5 0.3
KSC945 KSA733 4 Audio 50 0.15 6 1· 40 700 100 10 0.3
2N4126 4 Audio 25 0.2 1 2 120 360 50 5 0.4
MPS4249 3 Audio 60 5 0.1 100 300 10 0.5 0.25
2N5086 3 Audio 50 0.05 5 0.1 150 500 10 l' 0.3
2N5088 3 Audio 30 0.05 '5 0.1 300 900 10 1 0.5
MPS6522 3 Audio 25 0.1 10 2 200 400 50 5 0.5
MPS6520 3 Audio 25 0.1 10 2 200 400 50 5 0.5
MPS6523 3 Audio 25 0.1 10 2 300 600 50 5 0.5
MPS6521 3 Audio 25 0.1 10 2 300 600 50 5 0.5
MPS4250A 2 Audio 60 5 0.1 250 700 10 0.5 0:25
2N5087 2 Audio 50 0.05 5 0.1 250 800 10 '1 0.3
MPS4250 2 Audio 40 5 0.1 250 700 10 0.5 0.25

2N5089 2 Audio 25 0.05 5 0.1 400 1200 10 1 0.5
2N6428A ·4 Audio 50 0.2 5 0.1 250 650. 100 5 '0.6
2N5210 ·2 Audio .50 0.05 5 0.1 200 600 10 1 0.7
2N5209 ·2 Audio 50 0.05 5 0.1 100 300 10 1 0.7
MPS8097 ·2 Audio 40 0.2 5 0.1 250 700
KSC1222 KSA640 **40 Audio 45 0.05 3 0.5 120 1000 20 2 0.3
KSC900 ··30 Audio 25 0.05 3 0.5 120 1000 20 2 0.2
Audio=10Hz to 15.7KHz
·=~AX, .. *==Noise Level
ciS· SAMSUNG SEMICONDUCTOR 34

TRANSI$TORs FUNCTION GUIDE
1·3. RF/VHF/UHF Amplifier Transistors

1-3·1. SOT·23 Type Transistors
Condition IT Cob VCEO Gpe Condition h,. NF(dB) 'AGe Condilion
Device (pF) (dB) [-- Gain
Ve• Ie Ve• Ie Condilion I (mA) Reduction
NPN (V) (mA) MIN TYP MAX (V) MIN (V) (mA) MIN MAX MAX I(MHz) MAX (dB)
KSC2734(H8Z) 10 10 1400 3500 1.5 12 10 5 20 200

KSC3120(H9Z) 10 2 1500 2400 #0.9 15 $12 10 5 40 200 *8 800'
KSC2759(H6X) 10 5 1250 2000 1.3 14 &10 10 5 40 180
MMBR5179 6 5 900 2000 @1 12 15 1 3 25 250 4.5 200
KSC2757(H3X) 10 5 800 1100 1.5 15 10 5 60 240
KSC2758(H4Z) 10 3 750 1000 0.8 25 14 10 3 60 240 4.5 900 . 11 30
MMBTH10(3E) 10 4 . 650 @0.7 25 10 4 60
KSC2756(H2X) w 5 500 850 #0.5 20 $15 10 5 60· 240 *6.5 200
MMBTH24(3A)
KSC2755(Hl X)
KSC2223(H5X)
KSC3125(A1Z)
KSC2715(B1X)
10
10
6
10
10
8
3
1
10
1
400
400
400
250
100
620
600
600
600
@0.36
#0.5
*1
1.6
3.2
30
30
20
25
30
$19
20
27
10
10
6
10
12
8
3
l'
10
2
30
60
40
20
40
240
180
200
240
3
*3
200
100
12 30
I
1.3.2' TO-92S Type Transistors
NF(dB)
Device
Condition fr(MHz) C~
(p)
VCEO OPE
(dB)
Condition hFE
---'----'- Condl-
VCE Ic VCE Ic tion
(NPN) (V) (rnA) MIN T\'p MAX (V) MIN (V) (rnA) MIN TYP MAX MAX frlMHz)
KSC2669 10 1 100 250 3.2 30 12 2 40 240
KSC2786 6 1 400 600 *1.2 20 18 6 1 40 240 5 100
KSC2787 6 1 150 300 2.5 30 6 1 40 240
1-3-2 TO-92 Type Transistors

Condition VCEO Condition Condition
~
IT Cob Gpe o h.. .NF(dB)
Device (pF) (dB) Gain
VeE Ie VeE Ie Condilion (mA) Reduction
NPN (V) (mA) MIN TYP MAX (V) MIN (V) (mA) MIN MAX MAX I(MHz) MAX (dB)
MPS5179 6 5 900 2000 @1 12 15 1 3 25 250 4.5 200

- KSC1730 10 5 800 1100 1.5 15 10 5 40 240
MPSH17 10 5 800 @0.9 15 *24 10 5 25 250 6 200
KSC1070*' * 10 3 750 1000 0.8 25 14 10 3 40 200 4 900 11 30
SS9018 5 5 700 1100 1.7 15 5 1 28 198
MPSHll 10 4 650 @0.7 25 10 4 60
MPSH10 10 4 650' @0.7 25 10 4 60
KSC1395 10 5 600 1100 1".5 15 10 5 40 240.
MPSH24 10 8 400 620 @0.36 30 $19 10 8 30
K$C1393 10 3 400 700 #0.5 30 20 10 2 40 240 3 200 12 30
KSC1394 10 3. 400 700 #0.5 30 20 10 2 40 240 3.5 200
MPSH20 10 4 400 620 @0.65 30 $18 10 4 25
SS9016 5 1 400 620 1.6. 20 5 1 28 198 5 100
KSCl187 10 3 400 700 #*0.6 20 20 10 2 40 240
KSCl188 10 3 400 700 1 20 20 .10' 2 40 240
KSC1674 6 1 400 600 *1'.5 20 18 6 1 40 240 5 100
KSC388 12.5 12.5 300 2 25 28 12 12.5 20 200
KSC1675 6 1 150 300 2.5 20 6 1 40 240
KSC838 10 1 100 250 3.2 30 12 2 40 240
* =TYP, #=Cre, @=Cob, $=Gce, &=Gcb, *. * * = DISK TYPE TRANSISTOR
35
1-4. 'High Voltage Transistors

1-4-1. SOT-23 Type Transistors
Condition hFE Condilioh Saturation Condilion fT(WIHz)
Veeo
Device and polarltr(Marklng) Voltage(V)
Vc. Ie Ie I. VCE V•• Vc. Ie

(V) (A) (V) (rnA) MIN MAX (rnA) (rnA) MAX MAX (V) (rnA) MIN 'TYP
NPN PNP
MMBTA42(1D) MMBTA92(2D) 300 0.5 10 30 40 20 2 0.5 0.9 20 HI 50

MMBTA43(1E) MMBTA93(2E) 200 0.5 10 30 40 20 2 0.5 0'.9 20 10 50
MMBT5401 (2L) 150 0.5. 15 10 60 240 50 5 0.5 1 10 10 100
MMBT5550(1 F) 140 0.6 5 10 60 250 50 5 0.25 1.2 10 10 100
1-4-2, TO-92S Type Transistors

Device and pola,IIy(Ma,ldng) Condilion hFE Condition Vc.(sal), V••(saIKV) Condition t,(MHz)
VOiO Ic Vc. Ie Ie I. VeE(sal) V.dSBI) Vee Ie

NPN PNP . (V) (A) (V) (rnA) MIN MAX (rnA) (rnA) TYP MAX TYP MAX (V) (rnA) MIN TYP
KSA1174 120 0.05 6 1 200 800 10 1 0.09 0.3 6· 1 50 100

KSC2874 120 0.05 6 1 200 1200 10 1 0.07 0.3 6 1 50 110
1-4-3. TO-92 Type Transistors
Device and pola'ily(Ma,klng) V CEO Ic

Condition h,. Condilion saturation
Voltage(V)
Condilion 'T{MHz)
Ie VeE Ie Ie I. VeE V•• VeE Ie

(V) (A) (V) (rnA) (rnA) (rnA) (V) (rnA)
NPN PNP MIN' MAX MAX MAX MIN TYP
MPSA44 400 0.3 10 10 50 200 10 1 0.5 0.75

2N6517 2N6520 350 0.5 10 30 30 ·200 30 3 0.5 0.9 20 10 40
MPSA45 350 0.3 10 10 50 200 10 1 0.5 0.75
MPSA42 MPSA92 300 0.5 10 30 40 20 2 0.5 0.,9. 20 10 50
2N6516 2N6519 300 0.5 10 30 45 270 30 3 0.5 0.9 20 10 40
KSC1506 300 0.1 10 10 40 240 50 5 2 30 10 40 80

2N6515 2N6518 250 .0.5 10 30 50 300 30 3 0.5 0.9 20 10 40
MPSA43 MPSA93 200 0.5 10 30 40 20 2 0.5 0.9 20 10 50
2N5551 160 '0.6 5 10 80 250 50 6 0.2 1 10 10 100
KSA709 150 0.1' 2 50 40 240. 200 20 0.4 1 10 50 50
2N5401 150 0.6 5 10 60 240 50 5 0.5 1 10 10 100
KSC1009 140 0.7 2 50 40 240 200 20 0.2 0.86 10 50 30 50

2N5550 140 0.6 5 10 60 250 50 5 0.25 1.2 10 10 100
2N5400 120 0.6 5 10 40 180 50 5 0.5 1 10 10 100
MPSL01 120 0.15 5 10 50 300 50 5 0.3 1.4 10 10 60
KSC1845 KSA992 120 0.05 6 1 200 800 10 1 0.3 6 1 50 100
MPSL51 100 0.6 5 50 40 250 50 5 0.3 1.2 10 10 60
1-4-4. TO-92L Type Prans/stors
VCiD
Condition h,. Condition Saturation Condition 'T(MHz)
Oevlca and pola,IIy(Ma,klng) Ie Vollage(V)

VeE Ie Ie I, Vcelsal) V.eI.al) VeE Ie
(V) (A) (V) (rnA) (rnA) (rnA) (rnA)
NPN PNP MIN MAX MAX MAX (VI MIN TYP
KSC2340 350 0.1 10 20 30 150 10 1 0.5 10 20 50

KSC2330 300 0.1 10 20 40 240 10 1 0.5 30· 10 50
KSC2383 KSA1013 160 1 5 200 60 320 500 50 1.5 5 200 15 50
KSC2310 KSA91 0 150 0.05 5 10 40 240 10 1 0.8 30 10 100
KSC2316 KSA916 120 0.8 ,5 100 80 240 500 50 1 5 10'0 120
36
1-5. Darlington Transistors

1-5-1. SOT-23 Type Transistors.
Device end polarHy(Marklng)

Ve.. Ie
Condition
Ve• Ie
h"
Ie
Condition VedsatlV••(oatKv)
I. Veolsat) V,olsat)
Condition
VeE Ie
,--
MMBT6427(lV) '40 0.5 5 100 20K 200K 500 0.5 1.5 2'
MMBTA13(lM) 30 0.3 5 100 10K 100 0.1 1.5 5 10 125
MMBTA14(lN) 30 0.3 5 100 10K 100 0.1 1.5 5 10 125
MMBTA63(2U) 30 0.5 5' 100 10K 100 0.1 1.5 5 10 125
MMBTA64(2V) 30 0.5 5 100 10K 100 0.1 1.5 5 10 125
*: VCEO
1-5-2. TO-92 Type Transistors.

Condition h., Condition Veolsat)V.ElsatKV) Condition 'T(MH,j
Ve.. Ie
Device and Polarity ,
VeE Ie Ie I, Veolsat) Vaols.t) VeE Ie
MPSA27 60 0.5 5 100 10K 100 0.1 1.5

MPSA77 60 0.5 5 100 10K 100 0.1 1.5
MPSA26 50 0.5 5 100 10K 100 0.1 1.5
MPSA76 50 0.5 5 100 10K 100 0.1 1.5
2N6427 *40 • 0.5 5 100 20K 200K 500 0.5 1.5 2
MPSA75 40 0.5 5 100 10K 100 0.1 1.5
MPSA25 40 0.5 5 100 10K 100 0.1 1.5
MPSA14 MPSA64 30 0.5 5 100 10K 100 0.1 1.5 5 10 125
MPSA13 MPSA63 30 0.5 5 100 20K 100 0.1 1.5 5 10 125
MPSA12' MPSA62 20 0.5 5 10 20K 10 0.01 1
*; VCEO
1-6. Digital Transistors

1-6-1. SOT~23 Type Transistors
Device and Polarity Rl R2 vc£o Ie Condition hFE Condition V(satKV) Condition ',(MHz)
VeE Ie Ie I. Veolsat). VeE Ie
NPN PNP KII KII (V) (mA) (V) (mA) MIN MAX (mA) (mA) TYP MAX (V) (mA) TYP
KSR1101 KSR2101 4.7 4.7 50 100 5 10 20 10 0.5 0.1 0.3 10 5 250/200

KSRll02 KSR2102 10 10 50 100 5 4 30 10 0.5 0.1 0.3 10 5 250/200
KSRll03 KSR2103 22 22 50 100 5 5 56 10 0.5 0.1 0.3 10 5 250/200
KSR1104 KSR2104 47 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSRll05 KSR2105 4.7 10 50 100 5 5 30 10 0.5 0.1 0.3 10 5 250/200
KSRll06 KSR2106 10 47 50 100 5 5 68 10, 0.5 0.1 0.3 10 5 250/200
KSR11'07 KSR2107 22 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSRll08 KSR2108 47 22 50 100 5 5 56 10 0.5 0.1 0.3 10 5 250/200
KSRll09 KSR2109 4.7 40 100 5 5 100 600 10 1 0.1 0.3 10 5 250/200
KSRlll0 KSR2110 10 40 100 5 1 100 600 10 1 0.1 0.3· 10 5 250/200
KSRll11 KSR2111 22 40 100 5 1 100 600 10 1 0.1 0.3 10 5 250/200
KSR1112 KSR2112 47. 40 100 5 1 100 600 10 1 0.1 0.3 10 5 250/200
KSR1113 KSR2113 2.2 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSR1114 KSR2114 4.7 47 50 100 5 5 68 10 .0.5 0.1 0.3 10 5 250/200
c8 SAMSUNGSEMICONDUcrOR' .37
TRANSISTORs· FUNCTION GUiDE
1~-2. TO-928 Type Transistors

,
Device and Polarily Rl R2 VCEo Ie Condition h.. Condillon Ve.(saIKV) Condllion ft(MHz)
,VCEO Ie Ie I. Ve.!sal) VeE Ie
NPN • PNP KO KD (V) (mA) (V) (mA) MIN MAX (mA) (mA) TYP MAX (V) (mA) TYP
KSR1201 KSR2201 4.7 4.7 50 100 5 10 20 10 0.5 0.1 0.3 10 5 250/200

KSR1202 KSR2202 10 10 50 100 5 4 30 10 0.5 0.1 0.3' 10 5 250/200
KSR1203 KSR2203 22 22 50 100 5 5 56 10 0.5 0.1 0.3 10 5 250/200
KSR1204 KSR22Cl4 47 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSR1205 KSR2205 4.7 10 50 100 5 ·5 30 10 0.5 0.1 0.3 10 5 250/200
KSR1206 KSR2206 ·10 47 50 100 5 5 68 10 0.5 0.1 0.3. 10 5 250/200
KSR1207 KSR2207 22 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSR1208 KSR2208 47 22 50 100 5 5 56 . 10 0.5 0.1 0.3 10 5 250/200
KSR1209 KSR2209 4.7 40 100 5 5 100 800 10 1 0.1 0.3 10 5 .250/200
KSR1210 KSR2210 10 40 100 5 1 100 600 10 1 0.1 0.3· 10 5 250/200
KSR1211 KSR2211 22 40 100 5 1 100 600 10 1 0.1 0.3 10 5 250/200
KSR1212 KSR2212 47 40 100 5 1 100 600 10 1 0.1 0.3 10 5 250/200
KSR1213 KSR2213 2.2 47 50. 100 5 5 68 10 0.5 0.1 .0.3 10 5 250/200
KSR1214 KSR2214 4.7 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
1-6-3. TO-92 Type Transistors

Device and Polarity Rl R2 VCEO . Ie Condilion hFE Condition V(.aIKV) . Condition ft(MHz)
VeE Ie Ie I. ve,(•• ti VeE Ie
NPH PNP· KO KO (V) (mA) (V) (mA) MIN MAX (mA) (mA) TYP MAX (V) (mA) TYP
KSR1001 KSR2001 4.7 4.7 fiO 100 5 10 20 10 0.5 0.1 0.3 10 5 250/200
KSR1002 KSR2002 10 10 50 100 5 5 30 10 0.5 0.1 0.3 10 5 250/200
KSR1003 KSR2003 22 22 50 100 5 5 56 10 0.5 0.1 .0.3 10 5 250/200
KSR1004 KSR2004 47 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSR1005 KSR2005 4.7 10 50 100 5 '5 30 10 0.5 0.1 0.3 10 5 250/200
KSR1006 KSR2006 10 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSR1007 KSR2007 22 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
KSR1008 KSR2008 47 22 50 100 5 5 56 10 0.5 .0.1 0.3' 10 5 250/200
KSR1009 KSR2009 4.7 40 100 5 1 100 600 10 1 0.1 0.3 10 5 250/200
KSR1010 KSR2010 10 40 100 5 1 100 eOO 10 1 0.1 0,3 10 5· 250/200
KSR1011 KSR2011 22 40 100 5 1 100 600 10 1 0.1 0.3 10 ·5 250/200
KSR1012 KSR2012 47 40 100 5 1 100 600 10 1 0.1 0.3 10 5 250/200
KSR1013 KSR2013 2.2 47 50 100 5 5 68 10 .0.5 0.1 0.3 10 5 250/200
KSR1014 KSR2014 4.7 47 50 100 5 5 68 10 0.5 0.1 0.3 10 5 250/200
.c8 SAMSUNG SEMICONDUCTOR 38

{7· JUNCTION FETS

1.7.1 80T-23 Type J·FET.
IDSS(~ 9m(mS) VGS(OFF) . (V)

DEVICE VGOO IG Po
Vos Vos Vos 10
(V) (mA) (mW) MIN MAX (V) MIN TYP (V) (V) lilA) MIN MAX
KSK123 20 2 200 0.13 0.47 4.5 0.9 1.6 4.5
KSK211 18 10 200 1 10 10 9 10 10 1 0.4 4
1.7.2 TO-928 Type J-FET
loss(~ 9m(mS) VOS(OFF) (V)

DEVICE VGOO IG Po
Vos VDS Vos 10!/lA)
(V) (rnA) (mW) MIN MAX (V) MIN TYP MAX (V) MIN MAX
KSK65 12 2 20 0.04 0.8 4.5 0.3 0.5 4.5
KSK161 . 18 10 200 1 10 10 9 10 10 1 0.4 4
1.7.3 TO-92 Type J-FET
loss (mA) 9m(mS) VGS(OFF) (V)

DEVICE Vooo IG Po ~
Vos Vos Vos 10

(V) (mA) (mW) MIN MAX (V) MIN TYP (V) (V) !/lA) MIN MAX
KSK30 50 10 100 0.3 6.5 10 1.2 10 10 0.1 0.4 5
KSKl17 50 10 300 0.6 14 10 4 15 10 10 0.1 0.2 1.5
.c8 SAMSUNG SEMICONDUCTOR 39.

2. POWER TRANSISTORS
2-1. General Purpose Transistors

2.1.1 TO-126 Type Trans/stors
Device Type. fT(MHz)

Ie ! VCEO hFE VCE(SAT) (V) Pe
VeE Ie Ie 18 VeE Ie
(A)' (V) NPN PNP (V) (A) MIN MAX (A) (A) TYP MAX (V) (A) MIN TYP (W)
0.1 180 KSC2682 KSA1142 5 0.01 100 320 0.05 0.005 0.16 0,5 10 0.02 180 8
0.2 300 KSC2688 10 0.01 40 250 0.05 0.005 1.5 30 0.Q1 50 80 10
0.5 300 MJE340 MJE350 10 0.05 30 240 20
1.2 120 KSC2690 KSA1220 5 0.3 60 320 '1 0.2 0.4 0.7 5 0.2 175 20
160 KSC2690A KSA1220A 5 0.3 60 320 1 0.2 0.4 0.7 5 0.2 1.1 20
\
3 30 KSD882 KSB772 2 1 60 400 2 0.2 0.3 0.5 5 ·0.1 80 10
40 MJE180 MJE170 1 0.1 50 250 3 0.6 1.7 10 0.1 50 12.5
45 KSD794· KSB744 5 0.5 60 320 1.5 0.15 0.5 2 5 0.1 45 10
60 KSD794A KSB744A 5 0.5 60 1.5 0.5 2 5 0.1 45 10
MJE181 MJE171 1 0.1 50 250 3 0.6 1..7 10 0.1 50 12'.5
80 MJE182 MJE172 1 0.1 50 250 3 0.6 1.7 10 0.1 50 12.5
5 25 MJE200 MJE210 .1 2 . 45 180 2 0.2 0.75 10 0.1 65 15
60 KSD1691 KSB1151 l 2 100 400 2 0.2 0.1 0.3 20
Device Type hFE V eE(SAT) (V) fr(MHz) Pe

Ie VeEO
VeE Ie Ie 18 VeE Ie
(A) (V) NPN PNP (V) (A) MIN MAX (A) (A) TYP MAX (V) (~) MIN TYP (W)
0.2 250 KSC1520 10 0.01 40 240 0.05 0.005 2 30. 0.Q1 40 80 10

300 KSC1520A 10 0.01 40 240 0.05 0.005 2 30 0.01 40 80 10
2 30 KSC1096 KSA634 5 1 40 240 1.5 0.15 0.3 0.7 10
45 KSC1098 KSA636 5 0.5 40 240 1 0.1 0.15 0.7 . 10
Device Type hFE VCE(SAT)' (VI ' fT(MHzI Pc
Ic VCEO
VCE Ic Ic 18 VCE Ic
(AI (V) NPN PNP (V) (AI MIN MAX (AI (AI TYP MAX (VI (AI MIN TYP (WI
0.2 300 KSC1507 10 0.01 40 240 0.05 0.005 2 30 0.01 40 80 15
1 40 TIP29 TIP30 4 1 15 75 1 0.125 0.7 10 0.2 3 30
60 TIP29A TIP30A 4 1 15 75 1 0.125 0.7 10 0.2 3 30
80 TIP29B TIP30B 4 1 15 75 1 0:125 0.7 10 0.2 3 30
100 JIP29C TIP30C 4 1 15 75 1 0.125 0.7 10 0.2 3 30
250 TIP47 10 0.3 30 150 1 0.2 0.1 10 0.2 10 40
300 TIP48 10 0.3 30 150 1 '0.2 0.1 10 0.2 10 40
350 TiP49 10 0.3 30 150 1 0.2 0.1 10 0.2 10 40
400 TIP50 10 0.3 30 150 1 0.2 0.1 10 0.2 10 40
1.5 150 KSC2073 KSA940 10 0.5 40 140 0.5 0.05 1.5 10 0.5 4 25
2 150 KSD401 KSB546 10 0.4 40 240 10 0.4 5 25
3 30 KSC1173 KSA473 2 0.5 70 240 2 0.2 0.3 0.8 2 0.5 100 10
40 TlP31 TIP32 4 3 10 50 3 0.375 1.2 10 0.5 3 40
55 KS0288 KSA614 5 0.5 40 240 1 0.1 0.15 0.5 25
60 TIP31 A TIP32A 4 3 10 50 3 0.375 1.2 10 0.5 3 40
KS0880 KSB834 5 0.5 60 200 3 0.3 0.5 5 0.5 9 30
KSC1983 4 0.5 500 2 0.05 1 12 0.2 15 30
80 TIP31B TIP32B 4 3 10 50 3 0.375 1.2 10 0.5 3 40
100 TIP31.C TIP32C 4: 3 10 50 3 0.375 1.2 10 0.5 3 40
4 60 KSC2233 5 1 30 150 4 0.4 1 5 0.5 10 40
80 KS0526 KSB596 .5 0.5 40 240 3 0.3 1.0 1.7 5 0.5 3 30
5 60 KS073 10 1 70 240 5 0.5 2 10 0.3 20 30
70 KS0362 ,5 5 20 140 5 0.5 1 5 0.5 10 40
100 KSC2517 5 2 40 200 3 0.3 0.6 30
6 40 TIP41 TlP42 4 3 15 75 6 0.6 1.5 10 0.5 3 65
60 TIP41 A TIP42A 4 3 15 75 6 0.6 1.5 10 0.5 3 65
80 TIP41B TlP42B 4 3 15 '75 6 0.6 1.5 10 0.5 3 65
100 TIP41C TIP42C 4 3 15 75 6 0.6 1.5 10 0.5 3 65
120 KS0363 5 1 40 240 1 0.1 1 5 0.5 10 40
7 60 KS0568 KSB707 1 3 40 200 5 0.5 0.5 40
80 KS0569 KSB708 1 3 40 200 5 0.5 0.5 40
100 KSC2334 KSA1010 5 3 40 200 5 0.5 0.6 40
150 BU407 5 0.5 1 10 0.5 10 60
BU407H 5 0.8 1 10 0.5 10
200 BU406 5 0.5 1 10 5 10
BU406H 5 0.8 1 10 5 10 60
BU408 6 1.2 1 10 5 10
MJE MJE
10 60 4 4 20 100 4 0.4 1.1 10 0.5 2 75
3055T 2955T
TRANSISTO,Rs FUNCTION GUIDE
, 2·2. Darlington Transistors

2.2.1 T0-126 Type Transistors
Device Type hFE VCE(SA1') (V) fy(MHz) Pc

Ic VCEO
VCE Ic Ic la VCE Ic
(A) (V) NPN, PNP (V) (A) MIN MAX (A) (A) TYP MAX (V) (A) MIN TYP (W)
1.5 60 KS09S5 KSB794 2 1 2K 3K 1A 0.001 1.5 Hi

SO KS09S6 KSB795 2 1 2K 3K 1A 0,001 1.5 10
3 60 KS01693 KSB1150 2 1.5 2K 20K 1.5 0.0015 0.9 1.2 15
100 KS01692 KSB1149 2 1.5 2i< 20K 1.5 0.0015 0.9 f2 15
4 60 MJESOO MJE700 3 1.5 0.,75K 1.5 0:03 2.5 40
MJES01 MJE701 3 2 0.75K 2 0.04 2.S
SO MJES02 MJE702 3 1.5 0:75K 1.5 0.03 2.5 40
MJES03 MJE703 3 2 0.75K 2 0.04 2.S
2.2.2 TO·220 Type Transistors
hFE VCE(SA1) (V) IT Pc

Ic VCEO
VCE Ic VCE Ic VCE Ic
(A) (V) NPN, PNP, (V) (A) MIN MAX (A) (A) TYP MAX (V) (A) MIN TYP (W)
2 60 TIP110 TIP115 4 2 0.5K 2 O.OOS 2.5 50
SO TlP111 TIP116 4 2 0.5K 2 O.OOS 2.5 50
100 TIP112 TIP117 4 2 0.5K 2 O.OOS 2.5 50
5 60 TIP120 TlP125 3 3 1K 3 0.012 2 65
SO TIP121 TIP126 3 3 1K 3 0.012 2 65
100 TIP122 TlP127 3 3 1K 3 0.Q12 2 65
KS0560 KSB601 2 3 2K 15K 3 0.003 1.5 30
S 60 TIP100 TlP105 4 3 1K 20K 3 0.006 2 SO
SO TIP 1 01 TlP106 4 3 1K 20K 3 0.Op6 2 SO
100 TIP102 TIP107 4 3 1K 20K 3 0.006 2 SO
150 BUS07 5' 0.05 1.5 60
200 BUS06 5 0.05 1.5 60
10 60 TIP140T TIP145T 4 5 1K 5 0.01 2 80
80 TIP141T TIP146T 4 5 1K 5 0.01 2 SO
100 TIP142T TIP147T 4 5 1K 5 0.01 2 , SO
=8 SAMSUNG SEMICONDUCTOR 42
TRANSISTORs ,FUNCTION GUI'DE
2.2.3 TO-3P & TO-3P(F) Type Transistors
hFE VCE(SAT) IT Pc
Ic VCEO PKG
VCE Ie; Ic 18 VCE Ic
NPN PNP (VI (AI MIN MAX (AI (AI TYP MAX (VI (AI MIN TYP
10 60 TIP140F TIP145F 4 5 1K 5 0.01 2 60 TQ·3P(FI
TIP140 TIP145 4 5 1K 5 0.01 2 125 TO·3P
80 TIP141F TIP142F 4 5 1K 5 0.01 2 60 TO·3P(FI
TIP141 TIP142 4 5 1K 5 0,01 2 125 TO·3P
100 TIP142F TIP142F 4 5 1K 5 0.01 2 60 TO·3P(F)
TIP142 TIP147 4 5 1K 5 0.01 2 125 TO·3P
2-3. Switching Transistors

Switching Time
I
VCEO Ic Device hFE VCE(SAT)(V) Pc
ton t.tg t, Package Structure
VCE Ic Ie 18 MAX MAX MAX
(V) (A) (NPN) (VI (AI MIN MAX (AI (AI TYP MAX !/.lSI !/.lSI !/.lSI (WI
400 0.5 KSC2752 5 0.05 20 80 0.3 0.06 1 1 2.5 1 10 TO·1,26
2 KSC2333 5 0.1 20 80 0.5 0.1 1 1 2.5 1 15 TO·220
5 KSC2518 5 0.5 20 80 2 0.4 1 1 2.5 0.7 40 TO·220
7 KSC2335 5 1 20 80 3 0.6 1 1 2.5 1 40 TO·220
10 KSC2749 5 1 15 80 6 1.2 1 1 2.5 0.7 100 TO·3P
15 KSC2751 5 2' 15 80 10 2 0.3 1 1 2.5 0.7 120 TO·3P
500 3 KSC5020 5 0.3 15 50 1.5 0.3 1 0.5 3 0.3 40 TQ-220 MBIT
4 KSC5022 5 0.3 15 50 1.5 0.3 1 0.5 3 0.3 60 TQ-3P MBIT
5 KSC5021 5 0.6 15 50 3 0.6 1 0.5 3 0.3 50 T0;220 MBIT
7 KSC5023 5 0.6 15 50 3 0.6 1 0.5 3 0.3 80 TQ-3P MBIT
10 KSC5024 5 0.8 15 50 4 0.8 1 0.5 3 0.3 90 TQ·3P MBIT
15 KSC5025 5 1.2 15 50 6 1.2 1 0.5 3 0.3 100 TO·3P MBIT
800 1.5 * KSC5026 5 0.1 10 40 0.75 0.15 '2 p.5 3 0.3 40 TQ-220 MBIT
3 KSC5027 5 0.2 10 40 1.5 0.3 2 0.5 3 0.3 50 TQ-220 MBIT
* KSC5028 5 0.2 10 40 1.5 0.3 2 . 0.5 3 0.3 80 TQ-3P MBIT
4.5 * KSC5029 5 0.3 10 40 2 0.4 2 0.5 3 0.3 90 TQ·3P MBIT
6 * KSC5030 5 0.4 10 40 3 0.6 2 0.5 3 0.3 100 TQ-3P MBIT
8 *KSC5031 5 0.6 10 40 4 0.8 2 0.5 3 0.3 140 TQ-3P MBIT
*: Under Development.
c8 SAMSUNG SEMICONDUCTOR 43 .'

, . t ,.3, 4 i i.e;: ;& . _
2-4. Horizental Defelection, ~tJ)yt Transistors

2.4.1 TO-3P Type Transistors'
.. .. ..-
Switching Time
VCEO VeEo Ie Device hFE VeE{SAT)(V) Pe
~ - ~, ~ . - ton t.tg. t, Comment
VeE Ie Ie 18 MAX MAX MAX
(V) (V) (A) (NPN) (V) (A) MIN MAX fA) (Ar TYP MAX (jlS) (jlS) (jlS) (W)
Built in
1500 800 2.5 KSD5000 5 0.5 8 2' 0.6 8 0.4 80
Damper Diode
Built in
3.5 KSD5001 5 0.5 8 2.5 0.8 8 0.4 80
Damper Diode
Built in
5 KSD5002 5 1 8 4 0.8 5 0.4 120
Damper Diode
Built in
6 KSD5003 5 1 8 5 1 5 0.4 120
Damper Diode
2.5 KSD5004 5 0.5 8 2 0.6 8 0.4 80
3.5 KSD5005 5 0.5 8 2.5 0.8 8 0.4 80
5 KSD5006 5 1 8 4 0.8 5 0.4 120
6 KSD5007 5 1 8 5 1 5 0.4 120
_2.4.2 TO-3P(F) Type Transistors
Swltehlng Time
VeEO VeEo Ie Device hFE VeE{SAn(V) Pe
to~ t.tg tf Comment
VeE Ie Ie 18 MAX MAX MAX
(V) (V) (A) (NPN) (V) (A) M.IN MAX (A) (A) TYP MAX (jlS) (jlS) (jlS) (W)
Built in
1500 800 2.5 KSD5010 5 0.5 8 2 0.6 8. 0.4 50
Damper Diode
Built in
3.5 KSD5011 5 0.5 8 2.5 0.8 8 0.4 50
Damper Diode
Built in
5 KSD5012 5 1 8 4 0.8 5 0.4 60
Damper Diode
Built in
6 KSD5013 5 1 8 5 1 5 0.4 60
Damper Diode
2.5 KSD5014 5 0.5 8 2 0.6 8 0.4 50
3.5 KSD5015 5 0.5 8 2.5 0.8 8 0.4 50
5 KSD5016 5 1 8 4 0.8 5 0.4 60
6 KSD5017 5 1 8 5 1 5 0.4 60
·cR SAMSUNG SEMICONDUCTOR 44

, r' ..... ,.,
3. QUICK REFERENCE TABLE (APPLICAnON)

3.1 Audio Equipment
~e
Application
SOT-23 TO-92 TQ-92L " TQ-126 TO-220
FM RM AMP KSC2223 KSC1674

Mix, Conv KSC2223 KSC1674
LocalOsc KSC2223 KSC1674,KSC1675
IF KSC2715 KSC838,KSC1675
AM RF. KSC1623 KSC945,KSC8l5
Conv Osc KSC2715 KSC1675,KSC945
KSC838
IF KSC2715 KSC1675,KSC945
KSC838 .
Dill Amp lOW KSA8l2,KSC1623 KSA733,KSC945
20W KSA8l2,KSC1623 KSA733,KSC945
30W KSA8l2,KSC1623 KSA733;KSC945 '
40W KSA992,KSC1845
50W KSA992,KSC1845
60W KSA99l,KSC1845
80W . KSA992,KSC1845
100W KSA992,KSC1845
l50W KSA992,KSC1845
Pre Driver 20W KSA954,KSC2003
25W KSA954,KSC2003
30W KSA9lO,KSC2310
35W KSA9l0,KSC23l0
40W KSA9lO,KSC2310
50W KSA9l O,KSC231 a
60W KSA9lO,KSC2310
80W KSA9lO,KSC2310
100W KSA9l0,KSC23l0 KSAl142,KSC2682
l50W KSAl142,KSC2682
20W KSAl142,KSC2682
Driver 3W KSA642,KSD227
5W KSA642,KSD227
lOW. KSA954,KSC2003
20W KSA954,KSC200,3
. 25W KSA954,KSC2003
30W KSA954,KSC2003
40W KSA9l6,KSC23l6
50W KSA9l6,KSC23l6 KSA l220,KSC2690
60W KSA l220,KSC2690
80W KSA l220A,KSC2690A
Output 3W KSA928A,KSC2328A
5W KSB772,KSD882
lOW KSB744,KSD794
20W KSB834,KSD880
KSA6l4,KSD288
25W KSB596,KSD526
30W TIP4l C,TIP42C
35W TIP41C,TlP42C
.TRANSISTORs FU~C"rIQN GUIDE
3.2 Video Equipment

Application Package " Color TV BIW TV
Tuner RF· SOT-23 KSC2755." KSC2755
TO-92 KSC1393
SOT-23 KSC2756 KSC2756
VHF MIX
TO-92 KSC1393,MPSH24/ KSC1394,MPSH24
SOT-23 KSC2757,KSC2759,MMBR5179 KSC2757,KSC2759,MMBR5179
UHF
TO-92 KSC1730,MPS5179,MPSH10 · KSC1730,MPS5179,MPSH10
DISK KSC1070 KSC1070
RF
SOT-23 ~SC2758 KSG2758
DISK KSC1070 KSC1070
UHF MIX
SOT-23 KSC2758 KSC2758
SOT-23 KSC2757,KSC2759,MMBR5179 KSC2757 ,KSC2759 ,MMBR5179
UHF
TO-92 KSC"1730,MPS5179,MPSH10 KSC1730,MPS5179,MPSH10
Video TO-92 KSA643,KSA733 KSA733,KSC945
Chroma
T0-92L KSC2330,KSC2340 KSC2330,KSC2340
Output
TO-202 KSC1520A KSC1520A
TO-126 KSC2688
TO-220 KSC1257 KSC1507
Vertical OSC TO-92 KSC945,KSA733
Deflection TO-92 KSA642,KSA643,KSD227,KSD261
Driver
TO"92L KSC2310,KSA910
TO·220 KSB546,KSD401,KSA940,KSC2073 KSD880,KSD288,KSA614,KSB834
TO-126 KSA1220A,KSC2690A KSA 1220A,KSC2690A,KSB772,KSD882
Output
TO-202 KSC1096,KSA634
TO-92L KSC2328,KSA928A
Sound Output TO-126 KSA 1220A,KSC2690A
TO-220 KSB546,KSD401,KSA940,KSC2073
TO-202
TO-92L KSC2383,KSA1013 KSC2328A,KSA928A
TO-92 KSD261,KSB564,KSB1116,KSA643,KSD471,KSD1616
AGC TO-92 KSC945,KSA733 · KSC945,KSA733
Sync
TO'92 KSC945,KSA733 · KSC945,KSA733
Separator
Horizontal OSC TO'92 KSC945,KSA733 KSC945,KSA733
Deflection Driver
TO-92
TO-92L KSC2330,KSC2316;KSA916
Output TO-3P KSD5QOO,KSD5001 ,KSD5002,KSD5003 KSD5004, KSD5005,KSD5006,KSD5007
TO-220 KSD362,KSQ73
Series Error TO-92 KSA733,KSC945
Amp
Regurator TO-92L KSC231 O,KSA91 0
Driver T0-92 KSA733,KSC945
TO-92L KSC2310,KSA910
Output T0-220 KSD560 KSD288,KSD880,KSB834,KSA614
TO-126 KSB772,KSD882
TO-202 KSC1096,KSA634
Switching Driver. TO-92 KSD471 A,KSB564A,KSD261,KSA643 KSD4 71 A,KSB564A,KSD261 ,KSA643
Regurator Output TO-3P KSD5007 KSD5007
".
80T·23 TYPE
~ 20mA 30m" SOmA O.1A O.2A O.3A O.SA O.SA O.BA '10mA
12V MMBR5179
14V KSC2734
KSC2759
15V KSC3120
KSC2757
20V KSC2223 KSC2756 BCW29-33 (2mA)
KSK123
25V KSC2758 KSC3125 MMBTH10. MMBTA4124 KSA1298

MMBT5089 MMBTA4126 KSC3265
MMBC1009F1-5
30V KSC2755 KSC2715 MMBTH24 MMBTA4123 MMBTA13 KSA1182 MMBT2222

MMBT5088 MMBTA4125 MMBTA14 KSC2859
MMBTA63
MMBTA64
32V BCW60A-D
BCW61A-D
35V MMBC1622D6-8
40V MMBA812M3-7 MMBT3903 MMBT6427 MMBT2222A
MMBC1623L3-7 MMBT3904 MMBT2907
MMBTA20 MMBT3906 MMBT4401
MMBTA70 MMBT4403
KSR1109-12
KSR2109-12
45V MMBA811C5-8 BCW69-72 MMBT6429
BCW70G-K
BCW71G-K
50V MMBT5086 KSA812 MMBT6428
MMBT5087 KSC1623
KSR1101-8
KSR2101-8
KSR1113/4
KSR21'13/4
60V MMBT2484 MMBTA05 MMBT2907A
MMBTA55
80V MMBTA06
MMB'[A56
140V MMBT5550
150V MMBT5401
200V MMBTA43
MMBTA93
300V MMBTA42
MMBTA92
c8 SAMSUNGSEMICOND"'~OR
TRANSISTORs FU"CTION GUIDE
TO-92S, TO-92 & TO-92L TYPE (VCEO: 12V",aOV)
F', VCEC 40V 45V 50V 60V

12V 15V 20V 25V 30V 35V
Ie "
20mA KSK65 KSC1395 KSK161 (1 OmA) KSC1070 KSC1393 KSK117
(2mA) KSK211 (1 OmA) KSC1394 (10mA)
KSC1674 KSK30
KSC2786 (10mA)
25mA SS9016
30mA KSC1187 SS9011
KSC1188 KSC838
KSC2669
50mA MPS5179 KSC1730 KSA542 2N5088 KSA640 2N5086
SS9018 KSC184 KSC1675 KSC122~ 2N5087
KSC2787 2N5209
KSC388 2N5210
KSC900
'2N5089
O.1A MPSH17 MPS5172 KSC839 KSC1330 SS9014 KSR1201-8
MPS6520 KSC921 MPS6513 SS9015 KSR1213/4
MPS6521 MPSH20 MPS6517 KSR2201-8
MPS6522 MPSH24 MPSA10 KSR2213/4'
MPS6523 MPSA20 KSR1001-8
MPSH10 MPSA70 KSR2001-8
MPSH11 KSRtOO9-12 KSR1013/4
KSR2009-12 KSR2013/4
KSR1209-12
KSR2209-12
O.15A MPS4250 KSA1175 MPS4250A
KSC2785 MPS4249
KSA733
'KSC945
0.2A 2N4124 2N4123 2N3903 KSA539 2N6428 KSA545
2N4126 2N4125 2N3904 KSC815 2N6428A KSC853
2N3905
2N3906
MPS8097
O.3A KSC3488 KSA953
KSA1378 KSC2002
KSA64:2 '
KSD227
0.5A MPSA12 MPS6560 MPSA13 2N6427 MPSA26 MPS8098
MPSA62 MPS6562 MPSA14 MPSA25 MPSA76 MPS8598
KSA643 MPSA63 MPSA75 MPSA05
KSD261 MPSA64 MPSA55
SS9012 MPSA27
SS9013 MPSA77
KSA1150
KSC2710
O.6A MPS3706 MPS3702 MPS2222 2N4400 MPS2907A
MPS3703 2N4401
MPS3704 2N4402
MPS3705 2N4403
MPS2222A
MPS2907
O.7A KSB81 0 KSA707 KSA708
KSB811 KSC1072 KSC1008
KSA931
KSC2331
TO-92S, TO-92 & TO-92L TYPE (Continued)
I~ Ie
0.8A
12V 15V 20V 25V 30V 35V 40V 45V 50V 60V
1A KSB564A KSD1021 MPS6602 KSB1116 KSB116A

KSB811 KSD471A KSD16i6 KSD1616A
MPS6601
MPS6651
1.5A SS8050
SS8550
2A (10V) KSA928A
KSC2500 KSC2328A
I
TO-92S, TO-92 & TO-92L Type (VCEO: 80V"'400V)
~ Ie
BOV 100V 120V 140V 150V 160V 200V 250V 300V 350V 400V
20mA
25mA
30m A
SOmA KSA992 KSA91 0

KSC1845 KSC2310
KSA1174
KSC2874
O.1mA KSC1506 KSC2340

KSC2330
O.15A MPSL01
O.2A
O.3A KSA954 MPSA45 MPSA44

KSC2003
O.5A MPS8099 MPSA43 2N6515 2N6519 2N6517 .
MPS8599 MPSA93 2N6518 MPSA92 2N6520
MPSA06 2N6516
MPSA56 MPSA42
O.6A MPSL51 2N5400 2N5550 2N5401 2N5551
cas." SAMSUNG SEMICONDUCTOR 49

TO-928, TO-92 & TO-92L Type (continu~d)
I~ I~
BOV 100V 120V 140V 150V lBOV 200V ' 250V 300V 350V 400V
O:tA KSC1009 KSA709

"
O.SA KSA916
KSC2316
lA KSA1013
KSC2383
1.5A
2A .,
T0-126 & TO-202 TYPE (VCEO: 25V"'400V)
~
Ie
25V 30V 40V 45V BOV BOV 100V 120V 160V lBOV 2~OV 300V 400V'
O.lA KSC2682
KSAl142
I
O.2A KSC1520 ~SC2888

KSC1520A
O.5A MJE340 KSC2752

MJE350
1.2A KSC2690 KSC2690A

KSA1220 KSA1220A
1.5A I\S0985 KS0981'

KSB794 KSB795
2A KSC1096 KSC1098
KSA634 KSA636
\
3A KS0882 MJE170 KS0794 I\S0794A MJE172 KS01692
KSB772 MJE180 KSB744 KSB744A MJE182 KSBl149
MEJ171
MJE181
S0169a'
~SB1150
4A MJE700 MJE702
1v1JE701 MJE703
~JEBOO MJE802
MJEBOl MJE803
.
5A MJE200 ~S01691
MJE210 /<S81151
TO-220 TYPE
~
VCEO
30Y 40Y 55Y 80Y 70Y 80Y 100Y 120Y 150Y 200Y 250Y 300Y 350Y 400Y 500Y BOOY
0.2 KSC1507
1 TIP29 TIP29A TIP29B TIP29C TlP47 TIP48 TIP49 TlP50
TIP30 TIP30A TIP30B TIP30C
1.S KSC2073 'KSC5026
KSA940
2A TIP110 TIPlll TIPl12 KSD401 KSC2333
TIPl15 TIPl16 TIPl17 KSB546
3A KSCl173 TIP31 KSD288 TIP31 A TIP31B TIP31C KSC5020 'KSCS027
KSA473 TIP32 KSA614 TIP32A TIP32B TIP32C
KSD880
KSB834
KSC1983
4A KSC2233 KSDS26
KSBS96
SA KSD73 KSD362 TIP121 KSC2S17 KSC2518 'KSCS021

TIP120 TIP126 TIP122
T1P125 TIP127
KSS601
KSD560
6 TIP41 TIP41 A TIP41B TIP41C KSD363 KSC2335

Tlp42 TIP42A TIP42S TlP42C
7 KSDS68 KSDS69 KSC2334 BU407 BU406

KSB707 KSB708 KSA1010 BU407H BU406H
BU408
8 TIP1DO TlPl0l TlPl02 BU807 BU806

TIP10S TIP106 TlPl07
10 MJE30SST TIP141T TIP142T

MJE29S5T TIP146T TIP147T
TIP140T
TIP14ST
TO-3P & TQ-3P(F) TYPE
~
VeE
400
2.5A 3A 3.SA 4A 4.SA SA SA 7A SA lOA l5A
KSC2749 KSC2751·
500 'KSC5022 'KSC5023 'KSC5024 'KSC5025
800 KSD5000 'KSC502B KSD5000 ~KSC5029 KSD5002 'KSC5030 'KSC5031

KSD5004 KSD5005 KSD5006 KSD5003
KSD5Ql0 KSD5011 KSD5012 KSD5007
KSD5014 . KSD5012 KSD5016 KSD5013
KSD5017
• Under Development
c8 SAMSUNG SEMICONDUc:rOR 51
NOTES
KSA539 PNP EPITAXIAL SILICON TRANSISTOR
. LOW FREQUENCY AMPLIFIER

• Complement to KSC815
• Collector-Base Voltage Vceo = -60V
1~-92
• Collector Dissipation Pc =400mW
ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -60 V

Collector-Emitter Voltage Vceo -45 V
Emitter-Base Voltage VeBo -5 V
Collector Current Ic -200 mA
Collector Dissipation Pc 400 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55-150 °C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic Symb~1 Test Conditions M.in Typ Max Unit
Collector-Base Breakdown Voltage BVcBo Ie = -100~, IE =0 -60 V

Collector-Emitter Breakdown Voltage BVeEo Ic = -10mA, IB =0 -45 V
Emitter-Base Breakdown Voltage BVeBO IE = -10pA, Ie =0 -5 V
ColI~ctor Cut-off Current leBo VcB =-45V,le=0 -100 nA
Emitter Cut-off Current leBo VEB =-3V,.le=0 -100 nA
DC Current Gain hFE VeE =-lV,le =-50mA 40 240
Base-Emitter On Voltage VBe (on) VCE=-lV,le=-·1OmA -0.60 -0.65 -0.90 V
Collector-Emitter Saturation Voltage VCE (sat) Ic =-150mA,IB=-15mA -0.25 -0.5 .V
Base-Emitter Saturation Voltage VBE (sat) le=-150mA,IB=-15mA -0.9 -1.2 V
hFE CLASSIFICATION
Classification R 0 y
hFE 40-80 70-140 120-240
KSA539 PNPEPITAXIAL SILICON TRANSISTOR
STATIC CHARAC1'ERI8TtC IIASEoEIIITTER ON VOLTAGE

-200 -200
-180
. . . L~ bL.t I
r:e-
-100
=
I-"'" '1e.-o.7mA
/' ~ I I i-eo
•• -o.emA
/f"" ./' V Ie.-_
.... I 1-30
12O
/ ' V f-- 1 I
r ...- II·-IT- t--
- --
lOO
1-' ..... I-- 1-10
-80
r ~
Ie·-i- t--
t
- I--
I-eo 1a.-o.2mA J/
-5 -I--
-40 -3
-20 'LL~
o
o
T T-eo -1
-5 -10 -15 -20 -211 -30 -35 -40 -45 o -0.2 -11.4 -o.a -III -1.D -1.2
V"CVI,~_T_ VIICVI,~-'
DC CURRENT GAIN
IIAIIE-EMITTER SATURATION VOLTAGE
COLLECJOR.eIIITTER SATURATION VOLTAGE
1OOO~.'~ftEg
-10
-
lOG - - V... -1V,,+++---+++++ftH- -t-+++H4+l

5~
3
Ie._
1 V8E (010)
.-
-
-
- UI)
I
V
10L-...L..J...l..l..Ll.I.lJL-.L-J....LL.I.WJ_LJ...J...l.JJ.l.lJ -DD1
-1 -3 -5 -10 -30 -eo -100 -300 -1000 -1 -3 -5 -10 -30 -eo -100 -300
Ie (InA). CCII.LEeRIII ~ Ie (InA). COI.I,ECIUII ~ ,
COLLECI'OR OUTPUT CAPACITANCE
100
,--!.1_
10.0
311
:--r---.
I,
-1 -3 -5 -10 -30 -eo -100
LOW FREQUENCY AMPLIFIER

• Collector·Base Voltage Vcao=.-30V TO·-92
• Low. Collector·Emitter Saturation Voltage VeE (sat) = -O.lSV (TYP)
• Complement to KSC1&4
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Collector-Base Voltage Vceo -30 V

Coliector·Emitter Voltage VCEO -25 V
Emitter-Base Voltage Veeo -5 V
Storage Temperature Tstg -55-150 i °C
1. Emitter 2 Base 3 Collector
. ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic Symbol Test Conditions Min Typ Max Unit.
Collector-Base Breakdown Voltage BVceo Ic '" -100pA, IE =0 -30 V

Collector-Emitter Breakdown Voltage BVceo Ic = -lOrnA, Ie =0 -25 V
Emitter-Base Breakdown Voltage BVEeo le=-10pA,lc =0 '-5 V
Collector Cut-off Current Iceo Vce =-25V, IE =0 -100 nA
Emitter Cut-off Current leeo Vee=-3V,lc=0 -100 nA
DC Current Gain hFe Vce=-6V,lc=-lmA 40 I 400
Collector-Emitter Saturation Voltage Vce (sat) Ic =-20mA,·le=-2mA -0.15 -0.3 V
Base-Emitter On Voltage Vee (on) Vce= -6V,lc= -1mA -0.65 -1.0 V
Current Gain-Bandwidth Product
I 100 MHz
IT Vce=-6V, Ic=-lmA
Output Capacitance Cob Vce= -6V,le=0 2.5 pf
f=1MHz
. hFE .CLASSIFICATION
Classlfleatlon R 0 Y G
hFe 40-80 70-140 120-240 200-400
c8 SAMSUNG SEMIC~NDUcrOR . 57
KSA542 PNP EPITAXIAL SILlCQN TRANSISTOR
STATIC CHAHACTERISTIC DC CURRENT GAIN
-1-9000 ...... tel.-l.l

. , 1000IHJF-~m~~9
soo t=f Vcr--- fN
-eo
0- ........ ~II.':~ la--OSmA
:,t%
--
~- ",.Co.'"'t
6'-70
1 -eo
-so ~-
",-
to-
'":ri -
I
IB __ o.5mA
-00
'T0. i-
4
too
~ l-T
-20
-10
o
r-r
. ta--r,1mA
mA
10L_M~~_I----~~_3~_~5~U_1LO--~~_30~
o -1 -2 -3 -4 -5 '-6 -7 -8 -9 -10
VeE (VI. ClOU.Ec:roR-EMITTEA VOLTAGE Ie (mA). COLLECIOR CURRENT
CURRENT GAIN-BANDWIDTH PRODUCT BASE·EMITTER SATURATION VOLTAGE

COLLECTOR·EMITTER SATURATION VOLTAGE
1000 -10
r:( . t;
1
VCE __ fN
~ I
ie_lOla - =t=:=;:t:tttt=
~~::.:
500
I
~300
I
I·
V
.......
- 1"--'
III
VCE(sat)
I
I I
-
100 I
I1 llL H': Iii'

I'
SO 1.11
1 VBE.(S811
30
:---1:-'- :::r,;'" .
.t:
~~
10
0.5
Ii I!
10 30
-Cl.01
-0.1
i:,I::
-03-0.5 -1
I hWii
-3 -5 -10
I·
-30-50 -100
IC(mA). COI.LECTOA CURRENT Ie (mAl. cm.LECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE
r---~. 11-0
,
~I
~
....
..
I
"
II ............
2
, ,-~
j
o I
-0.1 -o.t -015 , -1 -3 -5 -10
Yeo (VI. COLLECTOR·BASE VOLTMJE
.=8 SA~SUNG SEMICONDUCTOR

58

• Complement to KSC85~ TO-92
• Collector-Base Voltage VCBO = -70V
• Collector Dissip~tion Pc =400mW

Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -S V
Junction Temperature Tj 1S0 °C
Storage Temperature Tstg -S5-150 °C
I
1 Emitter 2. Base 3 Collector
.r;
ELECTRICAL CHARACTERISTICS (Tli =25°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVceo Ic = -100pA, IE =0 -70 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-10mA, le=O -60 V
Emitter-Base Breakdown Voltage BVEeo IE=-10pA,lc =0 -S V
Collector Cut-off Current Iceo Vce =-4SV,IE=0 -100 nA
Emitter Cut-off Current IEeo VEe =-3V,lc =0 -100 nA
DC .current Gain hFE VcE =-1V,lc =-SOmA 40 400
Base-Emitter On Voltage VeE (on) VcE =-1V,lc =-10mA -0.60 -0.65 -0.90 V
Collector-Emitter Saturation Voltage VCE (sat) Ic=-1S0mA,le=-1SmA -0.2S -O.S V
Base-Emitter Saturation Voltage VeE (sat) Ic=-1S0rilA,le=-1SmA -0.9 -1.2 V
hFE CLASSIFICATION
Classification R 0 y G
,
hFE 40-80 70-140 120-240 200-400
59 .
STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE

-200 -200
I! ! ! I !
I
- J -100 =2ce! --I i i
-180
f..- .-1
•. -oBmA i
IV .
I'
.. . / ..-,....~ --1. __I OBmA_
-160
V
. I. _ -o.7mA-,-
I
I---
1-120 t V k- ..- _I-Lo.LA_ I---

140
11-
r/
,.....
.... ~
...- ~1.-J4mA
I-- I I
!-100 V' I I I ,
I'
I
f..- ~
8-80 V .......
:I
~~
1··rG.3mA- L= ==$
i-eo ~ o.
mA la __
.!i
-40 . -3
la--o.1mA
I
!
1
-20 I
0
. r 1 I i
o -5 .-10 -15 -20 -25 -30 -35 -40 -45-60 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
""" (VI, COLLECIOR-EMITTER VOLTMlE V. (V), BASE-EMITTER VOLTAGE

BASE-EMmER SATURATION VOLTAGE
DC CURRENT GAIN COLLECtOR-EMmER SATURATION VOLTAGE
1OOO1._~
-10
. 500 VCE __ 1Y I-- -1e-10I0
J
I JVoel
I
Vc:a(8l8) -
V
-ClO1
-I -3 -5 _10 -30 -&0 -100 -300
Ie (mAl, CCIIJ.ECIOR~
COLLECI'OR OUTPUT CAMClTANCE
60 f--!~lMHz
",_0
I, '" 0
I'-
i .........
s 3
6
I
-I -3 -5 -10 -30 -60 -100
c8 SAMSUNG SEMICOND~croR 60
LOW FREQUENCY LOW NOISE AMPLIFIER

• Complement to KSC1222 10-92
• Collector-Base Voltage Vcao =-5j>V
° • Low Noise Level NL=40r:nV (Max)
Characteristic Symb~1 Rating Unit
Collector-Base Voltage Veeo -50 V

Collector-Emitter Voltage VeEo -45 V
Emitter-Base Voltage VEeo -5 V
Collector Current Ie -50 mA
Collector Dissipation Pc ° 250 mW
Characteristic Symbol Test Conditions Min lYP Max Unit
Collector-Base Breakdown Voltage BVeeo Ie = -100J<A, IE =0 -50 V

Collector-Emitter Breakdown Voltage BVcEo Ic = -10mA, Ie =0 -45 V
Emitter-Base Breakdown Voltage BVEeo IE=-10J<A,lc =0 -5 V
Collector Cut-off CurreOnt leeo Vce=-40V,IE=0 -0.1 J<A
Emitter Cut"off Current IEeo VEe=-3V,lc=0 -0.1 pA
DC Current Gain hFE VCE=-3V,lc =-0.5mA 120 1000
Collector-Emitter Saturation Voltage Vcdsat) Ic=-20mA,le=-2mA -0.2 -0.3 Y-
Base-Emitter On Voltage VeE (on) VCE=-3V,lc=-0.5mA -0.63 -0,,]0 V
Collector Gain-Bandwidth Product h VcE =-3V,l e =-1mA 100 MHz
Output Capacitance Cob Vce=-iw, IE =0, f=1MHz 03.0 pF
Noise Level NL Vcc=-20V,lc=-0.1mA 27 40 mV
Rs=25KO, f=1KHz
A v =80dB
hFE CLASSIFICATION
Classification y G L V
hFE 120-240 200-400 350-700 600-1000
ciS SAMSUNG SEMICONDUCTOR . 61 .

KSAG40 PNP EPITAXIAL SILICON TRANSISTOR

-20 -10
-18 -5
8
~
...... I.a-l - -3
I-- f-""'.-3V
.- ~ ~
I
~ l
1.·-35pA
"'1e~-30pA I- 1
~l - I--
V I-
I--"I -
-- l--i•. -i5pA
I- 1••
i..-1••
~2OpA
JpA
~-~
fo.s
i-a. 1
/ ' I-- I-
1•• -10pA_
.~
-o.os
-4
It'" I I -0.03
2
o
o
'rr- -0.1>1
-2 -4 -6 -8 -10 -12 -14 -16 -18-20 0.1 -0.2 -0.4 -o.e -D.8 -1.0
Vee M, COLLEC1'OR-EMITTER VOLTAGE V.. (V).IIASE-EMITTER VOLTAGE
DC CURRENT GAIN CURRENT GAIN-BANDWlOTH PRODUCT

1000
Vr;e..-$1
l,..--l--'
/'
lO:L.....L.J...LLlillL........l...w.LUlIL-...L.J...LLlillL........l.....LI..LLlll 10
-0.01 -0.03-0.1)5..0.1 -O.3-o.s -1 \3-5-10 -30-50-100 ~ 10 30
-Ie (mA). COLLECTOR CURRENT Ie (ntA), COLLECI"OR ~URRENT
BASE-EMmER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE

COLLECTOR.EMITTERSATURATION VOLTAGE
-10
, . -5 i- tc-101B
I. -3
10
~ _..
..-
~ -1 Vae(sa1}
r!
z --
f! --;-- - -
I-~ ....... -_.
I
5 ~-
E
.-o.s If 3
r-- ' ........
I
~
oS
8 f---'--
............
,. -0.1- co sa1
t-o.os 2 f---
i-o.03
T __LL~~L-~__LL~~L-~~
-0.01 1L-~
-0.1 -Q.3-0.5 -1 -3 -5 -10 -30-50-100 -300-1000 -1 -3 -5 -10 -30 -50 -100 -300
Ie (mA). COLLECIOR CURRENT Vea M. COLLECTOR-IIASE VOLTAGE
62
NOISE FIGURE NOISE FIGURE

100 100
Vee- -fill VeE- -fill
I-10Hz t-10011z
50 50
30 30
~ "\. -'J..
~~'\~~ ~'\.~~ ~~ ~
~'\
'"
~
........
........ ~ 1'\ 3 ........
1 ,.... ,I'
,....
" 1'"
I""-..
0.1 0. 1
-0.01 -D.03-O.DS -0.1 -0.3-0.6 -1 -3 -5 -10 -0.01 -0.03-G.05 -0.1 -o.a-0.5 -1 -3 -5 -10
Ie (mA). COLLECTOR CURRENT Ie (mA). COLLECTOR CIJIIRENT
NOISERGURE
100
50
30
I"\,
~ ~~~
VeE_ -0'
f_1Hz
~
I
r-.... ~
f"', ......... t--

V
"- .......
O.1
-0.01 -0.03-0.05 -0.1 -0.3-0.5 -1 -3 -5 -10
Ie (mA). COLLECTOR CURRENT
:~. .
c8'SAMSUNG'SEMICONDUCTOR 63
LOW FREQUENCY POWER AMPLIFIER

• Complement to KSD227 TO-92
• Coilector Dissipation p c =400mW
Charact~ristic Symbol Rating Unit

Collector-Emitter Voltage VeEO -25 V
Collector Current (DC) Ic(DC) -300 mA
Collector Current (pulse) Ic(pulser -500 mA
, PW:s 10ms, duty cycle :s 50% 1 Emitter 2 Base 3. Collector
. Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVceo Ic =-100pA,IE=0 -30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-10mA, le=O -25 V
Emitter-Base Breakdown Voltage BVEBO IE=-10pA,lc =0 -5 V
Collector Cut-off Current Iceo Vce = -25V, IE =0 -100 nA
Emitter Cut-off Current IEeo VEe = -3V, Ie =0 -100 nA
DC Current Gain hFE VeE= -lV;le= -50mA' 70 400
Collector-Emitter Saturation Voltage VeE(sat). Ic'= -300mA,le = -30mA' -0.35 -0.6 V
, Pulse Test; PW:s 350/Ls, duty cycle:s 2%
hFE CLASSIFICATION
Classification 0 y G
hFE 70-140 120-240 ~00-400
STATIC CHARACTERISTIC BASE-EUiTTER ON VOLTAGE

-200 -woo
-180
/"--1~ .1 -500
f-- r-Vce--1V
r'
1a __ 1.4mA. -300
80
i(... ~ 1B-~1'2mf
§-' 40
V".. ~ I-- 18--1.0
1 two J
S V 20
. . . . r--
-1 la_-o.amA
iI
r 00
80
~ 1B--D.8mA 1=:
80
40
V
'/
lo-il- l
.II
-10
-5
le __ o.2mA
". -3
0
o -1 -2 -3 -4 -5 -8 -7 -8 -9 -10
-1
o -0.2 -0.4 -.G.6
I -0.8 -1.0-1.2
VCII (y), CDl.LECJIm.I!IImER WlLTAOE Vee (y), _-EIIITTER WlLTAOE
DC CURRENT GAIN BASE-EMITTER SATURAnON VOLTAGE

COLLE¢TOR-EIiITTER SATURAnON VOLTAGE
300 f-+-I-H-+H-It--++++ ttti-r---t- --t-t-ttttti

-10
5 - Ic_101a
3
I
i 1
VIE (SOl)
~:mii_ 1
Vee (SOl)
/
ro~~~uu~~~~~~~~~ -001
-1 -3 -5 -10 ~30 -50 -100 -300-500-1000 -1 -3 -5 -10 -30 -50 -100 "3OO-500-WOO
Ie (mA), CDl.LECIOR CUIHIENT oC (mAl, cot.LECIOR CUllllENT
I1.1
. I. I : Illi I
:;~~HZ I
10
........
-- f---
-
.~
--
._- I
I
iI
-1 -3 -5 -10 -30 -50 -100 -300
Veo (y), CDl.LECIOII-BASE VOLTAGE
KSA~43 IlNP EPITAXIAL SILICON TRANSISTOR,

• Compleinent to KSD261 TO-92
~ Collector Dissipation Pc=500mW

i
Collector-Base Voltage VeBO -40 V

Collector-Emitter Voltage Veeo ' -20 V
Emitter-Base Voltage Veao -5 V
Collector Current (DC) Ie (DC) -500 mA
Collector Current (pulse)* Ie (pulse)" -700 mA
Collector Dissipaiton Pc 500 mW
* PWs10mS, duty Cycle s 50%. 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Collector-Base Breakdown Voltage BVeao Ie = -100pA, Ie =0 -40 V

Collector-Emitter Breakdown Voltage BVeEo Ie = -10mA, I~ =,0 -20 V
Emitter-Base Breakdown Voltage BVeBO , le=-100pA,le=0 -5 V
, Collector Cut-off Current leao Vea=-25V,le=0 -200 nA
Emitter Cut-off Current leso VEs='-3V,le=0 .-200 nA
DC Current Gain hFE VeE=-1V,le=-100mA* 40 400
Collector-Emitter Saturation Voltage VeE (sat) Ie = -500mA,la = -50mA'1 -0.3 -0.4 V
Base-Emitter Saturation Voltage Vae (sat) Ie = ,500mA,I. = -50mA" -1.0 -1.3 V
* Pulse Test: PW = 350l's, duty cycle = 2%
hFE CLASSIFICATION
Classificatio"n R 0 Y G
hFE 40-80 70-140 120-240 200-400
c8 SAMSUNG SEMICONDUCTOR' 66

-500
_1000 _ _ _
- -500 l--~ilce __ 1V
V IB--l.emA -300
V V ." IB __ 1~mA
f/ ~ IBJ-1.2j la--1.QmA
'V V t- I
la __ Q8mA
f.- I-- I I
'B~-imA
1/ ~
t-
IB-I-~
-100
-so
0
V
_
~t +A -
o -2 -4 -8 -8 -10 -12 -14 -18 -18 -20 -0.2 -0.4 -0.8 -as -1.0 -1.2
Vee (VI, COUECTOR-DITTER 1ft)LTAGE V. (VI, -.muTTER 1ft)LTAGE
OC CURRENT GAIN BASE-EMmER SATURATION VOLTAGE

COLLECIOR-EMmER SATURATION VOLTAGE
1000 -10
500 I
I
5= le_10ta.
.
I
1 VIE("')
---
j'...,
-
- - --
, .... V
~jjj
1
Vee("')
30
I I
'i
I i lit
10 -1lO1
-1 -3 -5 -10 -30 -50 -100 -300_500_1000 -1 -3 -5 -10 -30,-SO -100 -300-500 -1000
Ie (mA~ COLLEC:IOR CUIWENT le(mA), COLLEC:IOR CUIUIENT
1:OLLECIOR OUTPUT CAPACITANCE

100
so f.1MHz
IE_D t--f-
30
r-...
1""'- i"'-r-.
0 l"-
S
1
-G.5 -1 -3 -5 -10 -30
Vca(VI, ~\IOLTMIE
KSA707· PNP EPtT~IAL SILICON TRANSISroR

• Complement to KSC1072 TO-92
• Collector-Base Voltage Vcao=-6OV
• Collector Dissipation Pc = BOOmW
. Characteristic Symbol Rating Unit

1
Emitter-Base Voltage VEBO -5 V
ELECTRICAL CHARACTERISTICS (T-a =25°C)
Collector-Base Breakdown Voltage BVcBO Ic=-100pA,IE=0 -60 V

Collector-Emitter Breakdown Voltage BVcEo Ic =-10mA, IB=O :"45 V
Emitter-Base Breakdown Voltage BVE80 IE=-l00pA,lc =O -5 V
Collector Cut-off Current ICBO VcB =-40V,IE=0 -0.1 pA
Emitter Cut-off Current lEBO VEB=-~, Ic=O -0.1 pA
DC CUrrent Gain hFE VcE =-'l!J,lc=-50mA' 40 240
Collector-Emitter Saturation Voltage VCE(sat) Ic = -500mA,IB= -50mA' -0.3 -0.7 V
Base-Emitter Saturation Voltage VBE (sat) Ic = -500mA, 18 - 5OmA' -0.7 -0.9 -1.1 V
Output Capacitance Cob Vea= -10V, IE=O 13 pF
f=lMHz
, Pulse Test: PW s 350,.s, duty cycle s 2%
hFE CLASSIFICATION
hFE 40-80 70-140 120-240
STATIC CHARACTERISTIC BASE·EMITTER ON VOLTAGE

-500 -1000
-450 -500
r: -
-
,. V,,-'-....1.
-VCI!.-
-300
1•• ~'.4mA
L
V I I
r: -
__ ".-1.2mA
1,0V V _ I
1•• -1.0mA
V f"'"
...... ~_ I I I-- -
".-Q.8mA
f200 V . I ._ -
f..-
-
.11-150
-100
~
I-'
l - _ ! - - 'T0.8j
-·'··-F
i
i
-10
-5
'·+i~
-3
-50
0 -1
o -S -10 -1S -20 -25 -30 -35 -40 -45 -50 -0.2 cQ.4 -0.8 -o.a -1.0 -1.2
VOl (VI, COI.LECRJA.EMITTER IIOLTAGE ".. (VI,IIAIIE_TTIR VOLTAGE
DC CURRENT GAIN BASE·EMITTER SATURATION VOLTAGE

-10
I-- 1c_101B I
1 _. VBE(III)
1 /
5 Vo.(eaI)
1111
-1 -3 -S -10 -30 -50 -100 -300-500-1000 -1 -3 -5 -10 -30 -50 -100 -300 -1000
Ie (mA), COI.LECTOR CURRENT Ie (mA), COLLECTOR CURRENT

100
I :l~z
--
50
~ ~E-o
30
~~
--,- ............
.- ,,-
-1 -3 -S -10 -30 -50 -100

-(VI, COUECTOA,BASE IIOLTAQE
KSA708'
..
'"" '-
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER,

10-92
MEDIUM SPEED SWITCHING
• Complement to KSC1008 ,
• COlleCtor-Base Voltage Vcso =-80V
ABSOLUTE MAXIMUM RATINGS (Ta 25°C) =
Collector;13ase Voltage VCBO -80 V

, Collector-Emitter Voltage , 'VCEO -60 V
1. Emitter 2 Base 3. Collector
ELECTRICAL CHARACTERISTICS (Ta 25°C) =

Collector-Base Breakdown Voltage BVCBO Ic =-l00pA,IE=O -80 V

Collector-Emitter Breakdown Voltage BVcEo Ic =-10mA,l e =0 -60 V
Emitter-Base Breakdown Voltage BVEeo IE=-100pA,lc =0 -8 V
, Collector Cut-off Current ICBO Vce =-60V,IE=0 -0.1 pA
Emitter Cut-off Current lEBO VEe =-5V,lc=0 -0.1 pA
DC Current Gain hFE VCE=-'ZII,lc=-50mA*, 40 240
r -0.7
Collector-Emitter Saturation Voltage VCE(sat) Ic = -500mA,le - 50mA· -0.3 V
Base-Emitter Saturation Voltage VeE (sat) Ic =-500mA,lc=-50mA -0.9 1.1 V
Current-Gain-Bandwidth Product. fr VCE= -10V,lc=-50mA 50 MHz
Output Capacitance Cob Vce= -10V,IE=O' 13 pF
f=lMHz
* Pulse Test: PW:s 350l's, duty cycle:s 2%
hFE CLASSIFICATION ,
Classification R 0' y
hFE 40-80 70-140 120-240
c8 SAMSUNG SEMICON~UCTPR 70
STATIC CHARACTERISTIC BASE·E.MITTER ON VOLTAGE

-500
! i;,.L'.8J
-450 -.- f - -
vl~=-11pA
I
V Is __ 1.4pA
/ V . . . Vpo
1,
". I I
18--1.2
V , /V .........
V , / ....... ....... ......
- - 1.=-I.opA -f--
---...--
_"I .
1.--O.8pA-f--
,;' ro- . I
/' ~ - 1.--0.8pA f - -
~
~ I
1.--O.4r-
~
-100 ~
-50
/" 1•• J.2pA
-1 '---'---'--'-__'---'--'---'---'__-'--'--1..--'
° -5 -10 -15 -20 -25 -30 -35 -40 -45 -SO o -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VeE M. COLLECIO..-rrrER VOLTAGE V.. M. _EMITTER VOLTAQE

COLLECTOR-EMITTER SATURATION VOLTAGE
-10
'~---r-=:Fm
1000
: t: Hi
V9E·... -~
-5 r--- Ic",101B
500
+- , ~ -3
300 -i I
g
i ~ -1
...~
.VBE(sal)
~
II:
~ -0.5
iii
;:!
~
-0.3
100
t'- ~
Ii
SO f---.-
j
I -0.1
./
i :-t+ III
~
30 f°.os VCE(sat)
*
> -0.03
10~~~~~~~~-w~ __~~~~ -0.01

-1 -3 -5 -10 -30 -50 -100 -300-500 -1000 -1 -3 -5 -10 -30-SO -100 -300-S00 -1000
Ie (mA). COLLECIOR CURRENT Ie (mA). COLLECIOA CURRENT
~
8 5~-~-+~~~~-~-~-++++H
-1 -3 -5 -10 -30 -SO -160

Vea M. COLLECIOR-IIASE VOLTAGE
.KSA709 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE AMPLiFIER

• Collector-Base Voltage Vcao =-160V T0-92
. • Complement to KSC1009
Collector-Base Voltage VCBO -'160 V

Emitter-Base Voltage VeBO -8 V
Collector Current Ic -700 . mA
Junction Temperature Tj 150 DC
Storage Temperature Tstg -55-150 DC
Characteristic Symbol Test C.ondltions Min lYP Max Unit
Collector-Base Breakdown Voltage BVcso Ic=-100pA,le=0 -160 V

Collector-Emitter Breakdown .Voltage BVceo 'lc=-10mA, Is=O -150 V
Emitter-Base Breakdown Voltage BVE~o le=-100pA,lc=0 -8 V
Collector Cut-off Current ICBO Vcs =-l00V,le=O -0.1 pA
Emitter Cut-off 'Current leBO Ves=-5V,lc=0 -0.1 pA.
DC Current Gain hFe Vce=-'ZIi,lc =-50mA* 40 240
Collector-Emitter Saturation Voltage Vce(sat) I, ,- -200mA,ls=-20mA* -0.3 -0.4 V
Base-Emitter Saturation Voltage Vse (sat) Ic~-200mA,ls - 20mA' -0.9 -1.0 V
Current Gain-Bandwidth Product h Vce= -10V, Ic=-50mA 50 MHz
Output Capacitance Cob Vcs= -10V, le=O 10 pF
f=lMHz
* pulse measured PW,s; 350l's, duty cycle,s; 2%
. hFE CLASSIFICATION
hFE 70-140 120-240 200-400
c8 SAMSUNG SEMiCoNDUCTOR
72

100 -1000
90
1//) IB.OBmA.l. .1
la.o.emA,
-500
VCE __ 1
80
r/, -300
I~ 1/ I
1/1 la_OAmA.
1-100
Vi. B -SO
~
fIJ -30
rJ IB-D.2mA 1 -10
20 V .!!
-5
-3
10
o -1
o 10 0 -0., -0.4 -0.& -0.&. -1.0 -1.'
VIE(¥). -.-TTERWLT_
BASE-EMITTER SATURATION VOLTAGE DC CURRENT GAIN

-10 1000
f--- Ie. t-- VCE--5V
500
300
1 I
I
g 100
1
1 SO
-0D5 30
-0.03
-1l.O1 10
-1 -3 -5 -10 -30 -50 -100 -300-600 -1000 -1 -3 -5 -10 -30 -SO -100 -300-500 -1000
Ie (mAl. COUECIOR CIIRIiENT Ie (mA). COUECIOR CURRENT
COLLECTO.R-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE

-10
.1
Sf--- le_1 24
'.1MHz
1-
le_O
3
20
I'. .,
I -~
1
-0.3
:'
~
L.
'8
1
>
-ODS
I\.:
-0.03 4
-0.01 o
-1 -3 -5 -10 -30 -SO -100 -300-500 -1000 -1 -3 -5 -10 -30 -SO -100
Ie (mAl. COI.LEC'IOR CUIIIIENT Yeo M. cou.EC:RJIWIASE VNLTAGE
c8 .SAMSUNG SEMICOND~croR 73
KSA733· PNPEPirAXIAL SILICON TRANSISTOR

• Complement to KSC945 TO-92
• Collector-Base Voltage VCBO = -6OY
ABSOLUTE' MAXIMUM RATINGS (Ta =25°C)
Characteristic Symbol· Rating Unit

~

Collector Dissipation Pe 250 mW
ELECfRICAL CHARACfERISTICS (Ta 25°C) =

Characteristic Symbol Test Conditions Min Typ Max· Unit
Collector-Base Breakdown Voltage BVeBo le=-100pA, ie=O -60 V

Collecfor-Emitter Breakdown Voltage BVeeo le=-10mA, IB=O -50 V
Emitter-Base Breakdown Voltage BVeBo Ie = -10pA, Ie =0 -5 V
Collector Cut-off Current leBO VcB=-SOV,le=O -0.1 pA
Emitter Cut-off Current leBO VeB =-5V,le=0 -0.1 pA
DC Current Gain hFe Vce=-SV,le=-1m.A 40 700
Collector-Emitter Saturation Voltage Vee(sat) Ic=-100mA,le=-10mA -0.18 -0.3 V
Base-Emitter On Voltage Vee (on) Vee =-6V,lc =-1mA -0.50 -0.62 -0.80 V
Current-Gain-Bandwidth Product h Vce =-6V,lc =-10mA 50 180 MHz
Output Capacitance Cob VeB=-10V,le=0 2.8 pF
f=1MHz
Noise Figure Nf Vce =-6V,lc=-0.3mA 6.0 20 dB
f=100Hz, Rs=10KO
hFE CLASSIFICATION
Classification R 0 V G L
hFe 40-80 70-140 120-240 200-400 350-700
c8 SAMSUNG SEMICONDU~R\ 74
KSA7J3 PNP EPITAXIAL SILICON TRANSISTOR

-50 -100
~
-45 -50
f:=
1= f=t=-f=c
v.t.-:jv.::.. .- --
-40 -30
I-
1-
~-
35
3 0 - - IBs-250,.A i 1-8 1= '0
j=::- c·
I
I!
fil-25
! i I
IB=-200,.A ...
-6
,
::I I I ~ -3
I-- .. t--
8 -20 IB--150,.A
i
~~~I~Ei;E!~~1
l-15 .__ IB--100,.A -1
.s I II S
-0.5
-10 .- --IB--50,.A
-o.s
-5
-t t-- -0.1
o -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 o -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VeE (y), COu.ECJOR.EMITTER IIOLTACIE V.. (y),IIASE-Ii!MITTER lIOLTAGE
OC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT
I
1000
IVCE--SV
g5!JO
a
~300
~
~z V i-'"
! ;00 /
~
i
II:
50
i! 30
'it
:c
I!
~
1~-L~~~ __~~~~~~~~ 10
-0.1 -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 -0.5 -1 -3 -5 +10 -30
Ie (mAl, COLLECTOR CURRENT Ie (mAl, COLLECTOR CURRENT
BASE-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE

-1 0 20
5r== 1e_101B
I.Ll Ii
!
3
10 ~-
IE""~
-- .
I I-
I
j---
_. - t--
1
i-
~
\leE (sat)
t--
I"
1
!IIIII
VeE (sat)
...... 1-' -.
5 .-
I'--. ......
3
-0.Q1 1
-0.1 -0.3-0,5-1 -3 -5 -10, -30-50 -100 -1 -3 -5 -10 -30 -50 -tOO -300
Ie (rnA), COLLECTOR CURRENT Yeo (y), COLLECIOR-IIASE IIOLTAGE
'KSA812 PNP EPITAXIAL SILICON TRANSISTOR

80T-23
• Complement to KSC1623'
• Collector-Base Voltage Vcao =-60V
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

1. Base 2. Emitter 3. Collector
Characteristic Symbol Test CO~,dltion Min Typ Max Unit
Collector Cutoff Current IcBO VcB=-60V, IE=O -0,1 fAA

Emitter Cutoff Current lEBO VEe=-5V,lc =0 -0,1 fAA
DC Current Gain hFE VCE = -6V, Ic= -1 mA 90 200 600
Collector-Emitter Saturation Voltage VCE(sat) le= -1 OOmA, le= -1 OmA -0,18 -0,3 V
Base-Emitter On Voltage VeE(on) 'c=-1mA, VcE =-6V -0,55 -0,62 -:-0,65 V
Current Gain-Bandwidth Product fT 'e=-10mA, VcE =-6V 180 MHz
Output Capacitance Cob Vce= -1 OV, 'E=O 4,5 pF
f=1MHz
Marking
hFE CLASSIFICATION
Classification 0 y G L
hFE 90-180 135-270 200-400 300-600
hFE grade
STATIC CHARACTERISTIC . BASE-EMITTER ON VOLTAGE

-50 -100
-45
~ IB=-400~~ J
-50 = Vci=-6V
~ -30
~ IB=-350j.l~ I
I' ~
~ le=-300IlA
I
1-e
-----
-~
~
1--1,.= -~50.A 10
""" I.L200~ -5
~ -3
'.".00 IB1=-1JOj./A
I I i 1
~ IB""-100,IAA
!.
Ji_o.s
-10
- 5
J-+- -0.3
~
o -0.1
o -2 -4 -6 -8 -10 -12 -14 -18 -18 -20 ·0 -0.2 -0.4 -0.& -0.8 -1.0 -1.2
VCE (y), COLLECTOAoEMITTEA WLTAGE v.. (y), _.eMITTER VOLTAGE
DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT

1000 1000
V E--6V
500 t= VeE -6V
-
300
~
Ii" 100
....... ~
II!
II:
::>
u
8
50
30
./
i
10
1~~~~~~~~~~__~~~~ 10
-0.5 -1 -3 -5 -10 -30
-0.1 -0.3 -0.& -1 -3 -5 -10 -30 -50 -100
Ie (mA), COLLECTOR CURRENT
I, (mA), COLLECTOR CURRENT
BASE-EMITTER SATURATION 'VOLTAGE

COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE
-10 20
I -5
- Ic-10
'=1U
. ~ -3 lE=O
10
I -1
VeE (sat)
"-......
Lo.s
,
E -0.3 ......
III ,;
> -0.1 VeE {sat)
!,-o.os 1'0..
-G.03
-0.G1 1
-0.1 -0.3-0.5-1 -3 -5 -10 -30-50 -100 -1 -3 -5 -10 -30 -SO -100 -300
Ie (mA), COLLECTOR CURRENT Veo (y), COLLECI'OfI.IIASE VOLTAGE
c8 SAMSUNG SEMICONDUcroR 77
KSA910 ~ PNP EPITAXIAL SILICON TRANSISTOR
DRIVER STAGE AUDIO AMPLIFIER

HIGH VOLTAGE SWITCHING APPLICATIONS lO-92L
• ColI.ctor~Emltter Voltage VCEO ::;:-150V
• Output Capacitance: Cob=5pF (MAX)
Characteristic Sym,..bol Rating Unit
Collector-Base Voltage Veao -1S0 V

Collector-Emitter Voltage Veeo -1S0 V
Emitter-Base Voltage V"ao -S V
Collector Current Ie . -SO mA
Junction Temperatu're Tj 1S0 °C 1. Emitter 2. Collector 3. Base
Storage Temperature Tstg -SS-+1S0 °C
ELECTRICAL CHARACTERISTICS (fa =25°C)

,
Characteristic Symbol Test Conditions Min .1)'p Max Unit
Collector-Base Breakdown Voltage BVcao Ie =-100pA, Ie =0 -1S0 V

Collector-Emitter Breakdown Voltage BVcEO Ie =: -SmA, Ie =0 -1S0 V
Emitter-Base Breakdown Voltage BVeao Ie = -10pA, Ie =0 -S V
Collector Cutoff Current Icao Vea = -1S0V, Ie =0 -100 nA
DC Current Gain hFE Vce=-SV,lc=-10mA 40 240
Collector-Emitter Saturation Voltage Vce (sat) Ic=~10mA, la=-1mA -0.8 V
Current-Gain-Bandwidth Product fr Vce =-30V, Ic =-10mA 100 'MHz
Output Capacitance Cob Vca=10V, le=0, S.O pF
f=1MHz
hFE CLASSIFICATION
Classification R 0 Y
/;IFe 40-80 70-140 120-240
L I I
-80
4- f-- I
_I.J_~ r-- -80 VCE __ SV
i i.--' l - II
t.,... ~ ,.~-soh,.A c-
V......... ...... II'
// I•• -.oco""
I
- Yl I I
IB--300,.A
'/
'I' I I••I_J,.,. c-
;.--- I I I
r,
-20
-10 J I 1.~1_1J"" c-
I I IT -10
. I
I I I )
-. -4 -8
Vea M. COLLECIOR EII1'\'TER VOLTAGE
-8 -10 -12 -14
o
o -0.2 -0.4 -0.6 -0.8 -1.0
VeE M. BASE-.EMITTER VOLTAGE

-1.2 -1.4
DC CURRENT GAIN SAFE OPERATING AREA
1000 _ _ _
500 -
300
"".-5V
-1000
-500
-300
~ ~: !;:;':CPulse . I
1-100
~100._.
iii 50
il0:_50 .·100ms
II:
II:
a
30 2- 30 ~
g ~. ~~~
'1?~.
:i -10
i '° _ _ So
.!! -5
-3
-1
-0.1 -0.3 -0.5 -1 -3 -5 -10 -30 -so. -100 -1 -3 -5 -10 -30 -50 -100 -300-500-1000
Ie (mA). COLLECTOR CURRENT VCE M. COLLECIOR EMITTER VOLTAGE
POWER DERATING COLLECTOR·EMITTER SATURATION VOLTAGE.

BASE·EMITTER SATURATION VOLTAGE.
1.8 -10
1.8 § -5 r - 10-101s
.. -3
z
1.' ~
!c~
S!
i 1.'
!!i
-1
VeE (sat)
iiiis 1.0 ~-o.s
II:
~ -0.3
.
W
~ 0.8 ./
i" ...... I VCE(sat)
...to.8
0
............ " ............. -~ ~ -0.1/
1-0 .05
0.4
~-0.03
0.2
o
o 20 40 80
T. <-CJ. AMBIENT TEMPERATURE
80 100
......
120
1'-
!
tt
140 160
-0,01
-0.1 -0.3 -0.5 -1 -3 -5 -10 -30-50 -100
Ie 1m,,). COLLECIOR CURRENT
KSA916' PNPEPITAXIAL SILICON TRANSISTOR'
·AUDIO POWER AMPLIFIER

• Driver Stage Amplifier TO..g2L
Collector-Base Vohage VCBO -120 V,

I Collector-Emitter Voltage Vcro -120 V
Junction Temperature Tj ·150 °C
Storage Temperature Tstg -55-+150 °C
1. Emitter 2, Collector 3. Base
Characteristic Symbol Test Conditions , Min lYP Max Unit
Collector-Base Breakdown Voltage .BVcBo Ic=-lmA,le=O -120 V

Collector-Einitter Breakdown Voltage BVcro Ic = -10mA, IB =0 -120 V-
Emitter-Base Breakdown Voltage BVeBO le=-lmA,lc=O -5 V
Collector Cutoff Current , . ICBO VcB =-120V,le=0 .-0.1 pA
DC Current Gain hFe1 Vce =-5V,l c =-10mA 60
hFe2 Vce=-5V,lc=-100mA 80 240
Collector-Emitter SaturatioQ Voltage Vce (sat) Ic=-500mA,IB=-SOmA -1 V
Current-Gain Bandwidth Product fr Vce =-5V,lc;"-100mA 120 MHz
Output Capacitance Cob V cB =-10V, le=O 40 pF
f=lMHz
hFE CLASSIFICATION
Classification 0 y
hFE(2) 80-160 120-240
STATIC CHARACI'ERISTIC DC CURRE14T GAIN

-1000
1 15rnA~
I L
I_le __ 10rnA
1000
500
fv-m
. I Veo--5V
- - ---
-800 IB __
,..... 300
I
U-800
/ /'
/
l-"-r- ~--rA ---
too 'I.fI~r:V -
........ ......
G // i / le __ SmA
IS __ 4mA
-.
la __ 3mA
I---
1
.I!
-200 ~ IB_~2mA
/" IB.-llmA
le_ ~ 10
-2 -4 -6 -8 -10. -1 -3 -5 -10 -30"':50 -100 -300 -500 -1000
Veo (VI, COUECIOR-EMITTER VOLTAGE k: (mAl, COLLECTOR cufiAENT
BASE-EMITTER ON VOLTAGE CDLLEcroR-EMITTER SATURATION VOLTAGE
-10.
-5
- Ic=101e
/
VCE(SIII)
5
-0111
-0.2 -0.4 -0..6 -08 -1.0 -0.1 -~o.s -1 -3 -5 -10 -30-50 -100 -300-500-1000
v .. (VI,BAsE-EMmER VOLTAGE Ie (mAl, COLLECIOA CURRENT
SAFE OPERATING AREA POWER DERATING
--
I--*$In lepul..
-3000
..
1-. 1000 i 1"-
8. ""..
i3 -500
/'0
O~~J)~",
-300.
~u -100 f'-. Tc
t
.I!
-50
.
-30
-10.
-1 -3 -5 -10.
Vel! (VI, COLLECTOR-EMmER VOLTAGE
-30 -SO
)
-100
0..5
--- ----50.
"" "-
........
100
Ta -
~
lSO
T. (-C). AMBIENT TEMPERATURE
c8SAMSUNG SEMICONDUCTOR 81
KSA928A .' PNP EP1TAXIAl SILICON TRANSISTOR
AUDIO POWER AMPLIFIER

• Complement of KSC2328A TO-921,
• Collector Dissipation Pc =·1 Watt
• 3 Watt Output Application
ABSOLurE MAXIMUM RATINGS (Ta =25°C)
Characteristic. Symbol Rating 'Unit
Collector-Base Voltage . VCBO -30 V

Emitter-Base Voltage VEBO ~5 V
Collector Current Ic -2 A
Collector Dissipation Pc 1 W
Storage Temperature Tstg . -55- +150 °C
1. Emitter 2. Collector 3. Base
Characteristic Symbol Test Conditions Min . Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic = -100";', IE =0 -30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-10mA,le=0 -30 V
Emitter-Base Breakdown Voltage BVEeo IE=-1mA,lc=0 -5 V
Collector Cutoff Current leBO Vce=-30V,IE=0 -100 nA
Emitter Cutoff Current lEBO VEe =-5V,lc=0 -100 nA
DC Current Gain hFE VcE =-2V,lc =-500mA 100 320
Base-Emitter On Voltage VBE (on) Vc~=-2V,.lc=-500mA -1.0 V
Collector-Emitter Saturation Voltage VCE (sat) Ic = -1.5A, Ie = -0.03A -2.0 V
Outpu.t Capacitance Cob Vce=-1OV, IE =0, 48 pF
f=1MHz
Current Gain Bandwidth Product h VCE=-2V,lc=-500mA . 120 t.1Hz
hFE CLASSIFICATION
Classification 0 y
hFE 100-200 160-320
KSA928A PNP EPITAXIAL SILICON TRANSISTOR

-1400
IB""-iA
-1200 Jr i -1200
I VCE=-:!II
i 1·--rA
Vi i
rL800 ooo
Ii
la--5mA
j
1-800
;'
I i
1
i
I'·' r
u
I
1··-r A I
I
1-
.!i
400
'I
1·=-r A
i
-200
i
-200 I
I I
1··-r A
I J
-2 -4 -6 -8 - 10 - 12 - 14 -16 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Vel! (V), COLLECJOR..EMlTTER VOLTAGE VIE M. BASE-EMITTER VOLTAGE
DC CURRENT GAIN COLLECTOR·EMITTER SATURATION VOLTAGE
3
I
mRBDI
"I
~
zl°OO
.. 500
z
~ 300 f-++++tttlt--+-H+HltrV,...""-I.-_-1::2VH-ttltl--H-H
a Ic ... 5OIB
~1°O._1I1"-..
T.....25OC
1
!E,
50
30
10L--L~LW~-L-U~~~-LLU~__~~ -OD!
-1 -3 -10 -30 -100 -300 -1000 -3000 -1 -3, -10 -30 -100 -300 -1000 -3000
Ie (rnA). COLLECTOR CURRENT Ie (mA), COLLECJOR CURRENT
POWER DERATING SAFE OPERATING AREA
-5
1,2 !----- Ie (MAX) PULSE
-3
IC(MAX)
~
1.0
i
I
iiii
~
0.8
" I'\..
'\
i'...
II:-Q.5
g -0.3
-1
Ta .. 2SOC
D.C
OPERATION
1s~ms
o.a
~
'""- '"
~ i -0.1
rt Q.4 So
.!I-o.o5
0.2 .0.03
VCEOMAX
o
o ~ ~ 50 50 ~ m ~ ~
-OD!
-0.1 -0.3-05- -1 -3 -5 -10
III
-30-50 -100
T. rC) AMBIENT TEMPERATURE Veo (V). COLLECTOR EMITTER VOLTAGE
ciS SAMSUNG SEMICONDUCTOR 83·

KSA931 PNP EPI,TAXIAL SILICON TRANSISTOR

MEDIUM SPEED SWITCHING TO-92L
• Collector-Base Voltage Vcso = -8OY
. • Collector Dlssipetlon Pc =1W
ABSOLUTE MAXIMUI\II RATINGS (Ta =25°C)

Collector-Emitter Voltage VeEO -60 V
Emitter-Base Voltage Veeo -8 V
Storage Temperature Tstg . -55-+150 °C 1. Emitter 2. Collector 3. Base
Collector-Base Breakdoy!n Voltage BVCBO le=-100pA,IE=0 -80 V

Collector-Emitter Breakdown Voltage BVeEO le=-10mA, le=O -60. V
Emitter-Base Breakdown Voltage BVEBO le=-100pA,le =0 -8 V
Collector Cut-off Current. leBO Vce =-6OV,IE=0 -0.1 pA
Emitter Cut-off Current leBO VEe =-5V,le=0 . . -0.1 pA
DC. Current Gain hFE Vce=-'lV,le=-50mA" 40 240
Collector-Emitter Satl!ration Voltage VeE (sat) Ic = -500mA,le = -50mA" -0.3 -0.7 V
. Base-Emitter Saturation Voltage VeE (sat) Ie = -500mA,le - 5OmA" -0.9 -1.2 V
Current Gain-Bandwidth Product h VCE = -10V, le=-50mA 100 MHz
Output Capacitance Cob Vce =-1OV,IE=0 13 pF
f=1MHz
"Pulse Test PWs350,..s, duty cycles2%
hFE CLASSIFICATION
hFE 40-80 70-140 120-240
STATIC CHARACI'ERISTIC BASE-EMITTER ON VOLTAGE

-1000
-460 -500
i ... J,.a,.A f---- 1--
r- I-VOE.-211
/[....-- /a.-1A,oA
/..~,;;. . . - 1•• ~1.2"" I :
-.". ~ J•• _1.o.At-i-
V"-.-~ ~..-r
- - - '.
1
_1.~-o.a,.A+
I I
V /----"""
- -
'/ -~~ --+-
. ";I··-~t
: I
I 1
I
V :1
-+-/a.-OA,A-
I T -5
-100
-50
/: - -_.
I
-
I
'I· --r -3
VI
0. -6
T
!
-10. -'6 -20 -25 -30 -35
I
-~ -45 -50
-,
o -G.2 -0.4 -OB -OB -1D -1.2
m__
V.. (VI, -.ucmR EMITTER VOLTAGE . V. (VI, _ EMITTER VOLTAGE
DC CURRENT GAIN BASE-EMmER SATURATION IIOLTAGE

-,0.
1ooo:
5001-- Vce.-211 6.--- 1e-1018
300
~ -3
I5 - -06
1
VBE(aaI)
It -03
IB , -0.
II
>
t -o.os ee(BBI)
i -1J.03
-001
-1 -3 -5 -10. -30 -50 -100 -300-500 -1000 -, -3 -5 '-10 -30 -50 -100 -300-500 -1000
1c(JilA),COUEC:IUR~ Ie (mA), COLJ.ECIOR CURRENT
sooo
'A ---1---+---+-----1--- - -
3000
~ '.2 f - - - t - - i - - - j - - - - - · i
I
lOB
,D
-··f",K . +-~
81000
Il : DCOPER!iI'ION
[OB -- - ~ --
s
'00 1. T._25OC
ffiIJ
l.OA 2. -Single pulse
I", 50
.30
0.2
I 0
25 50 75 100 125 150 3 5 '0 30 50 100 300
Veo (VI, COI.LECIOII EMITTER VOLTAGE
c8 S~MSUNG SEMICONDUCTOR 85
KSA952 PNP SILICON 'TRANSISTQR
GENERAL PURPOSE APPLICATIONS

HIGH TOTAL POWER DISIPATION TO-92
(PT=600 mW)
High h.E and LOW Vc.(sat)
Characteristic Symbol R.atlng Unit

Base Current 18 -1'50 mA
Junction Temperature Tj 150 ·C
Storage Temperature Tstg -55"'150 ·C 1 .. Erhit1er 2. Collector 3. Base
C harllcteristic SymbOl Test Condition Min Typ Max Unit
• Base Emitter Voltage VBE VcE=-6V,lc=-10mA -:-600 ~640 -700 mV

Collector Cutoff· Current ICBO Vc8 =-30V, IE=O -100 nA
Emitter Cutoff Current lEBO VE8=-5V, Ic==O -100 nA
• DC Current Gain hFE1 VcE =-1V,lc=-100mA 90 200 400
hFE2 VCE=-1V,lc=c-700mA 50 100
·Collector Emitter Saturation Voltage VCE(sat) Ic=-700mA, 18=-70mA -0.25 -0.6 V
• Base-Emitter Saturation Voltage V8E(sat) Ic=-700mA,18=--:70mA -0.95 -1.2 V
Output Capacitance Cob Vc8=-6V, IE=O, f=1MHz 17 40 pF
Curent Gain Bandwidth"Product fr VCE=-6V,IE=10mA 50 160 MHz
• Pulse test: PW <EO; 350"s, duty cycle <EO; 2% Pulsed
hFE1 CLASSIFICATION
hFE1 90-180 135-270 200-400
KSA953/954 PNP EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER

• Complement to KSC2002lKSC2003 TO-92
Collector-Base Voltage : KSA953 VeBO -60 V

: KSA954 -SO V
Collector-Emitter Voltage : KSA953 VeEO -60 V
KSA954 -SO V
Collector Current (DC) Ie -300 (llA
• Collector Current (Pulse) Ie -500 mA
Storage Temperature Tstg -55"-'150 ·C
• PW:«; 1Oms, Duty Cycle :«;50%

1. Emitter 2. CO/lector 3. Base
I
ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
Characteristic Symbol Test Condition Min Typ Max Unit
coliector Cutoff Curreqt : KSA953 leBO Vee=-60V, IE=O -100 nA

: KSA954 Vce=-SOV, 'E=O -100 nA
Emitter Cutoff Current lEBO VEe=-5V, le=O -100 nA
• DC Current .Gain hFEl VeE=-1V, 'e=-50n'lA 90 200 400
hFE2 VcE =-2V, 'e=-300mA 30 SO
• Base-Emitter On Voltage VeE (on) VeE = -6V, le= -1 OmA -600 -660 -700 mV
• Bas.e Emitter Saturation Voltage Vee (sat) 'e=-300mA,le=-30mA -0.S5 -1.2 V
• Collector-Emitter Saturation Voltage VeE (sat) le=-300mA,le=-30mA -0.15 -0.6 V
Output CapaCitance Cob Vce =-6V,IE=O, f=1MHz 13 25 pF
Current Gain-Bandwidth Product fr VcE=-6V,IE=10mA 50 100 MHz
• Pulse Test: PW':«;350"s, Duty Cycle.:-:;2% Pulsed
hFE (1) CLASSIFICATION
hFE~ 90-180 135-270 200-400
c8 SAMSUNG SEMICONDU~OR 87
COLLECTOR CURRENT ....
-500 COLLECTOR EMITTER VOLTAGE
;5.~
-40a \e* _,.16«'' '
~~ .... _A.<%'''-
...I.: \6* _3.~
I8 -300
~ ~ B~~\6""':":2
'3om~
V""
5(1'1f>.
"",,,
~~ ~~~-z,ur
~ '-I 5"'''-
i -200 ~~ .::b,."'j-'
V IB=-1:0mA i~
1 r/'" • ...,.,...6'!!J,,;c--
.J! -100 ....... ~

~--~5m.6i .... 111
19 -0
-1 • -2
.
V.. M,COLl.ECTOR EMITTER V.OLTAGE
-3 -4 -5 .... 10 -20
V.dV),COLl.ECTOR EMITTER VOLTAGE
-30 -40 -50
DC CURRENT GAIN va. BASE AND COLLECTOR SATURATION
1000 _ _
COLLECTOR CURRENT
PULSE -10 VOLTAGE .... COLLECTOR CURRENT
1
Ie 0'18
500 I '-5
PULISE
;!
200 . ~
g 2
100_,,_
2.OV
1' V.. (saij
~ 50 1-0.5
~ -1.QV
~ w~+++HH*-4~~~~-H~~~~~~ ~ -0.2
• 1
~ -0.
"J8 5~ la~!!~I§§!~II~~~II~!!~~ t-a.a5

"J
-0.02 mi~
_1~.1~~llU_~1~~UW_W,La~-U~_~,~aa~~~_lWooo.
IdmA~ COLLECTOR CURRENT

-0.0
-0.11 -1
11111
-10.
lc(mA), COLLECTOR CURRENT
-100 -1000
-1000
-500
-200
-100
COLLECTOR CURRENT ....
BASE EMITTER VOLTAGE
/
Vee"" 6.OV
PULSE = mEl. 1000500
1200~~4-HH~--~~~~
GAIN BANDWIDTH PRODUCT ¥s.
EMITTER CURRENT .
vce=-e.ov
1'=-_11
-50
a I
a /
5
I
I 20
1fla~lEI.
2
If
1 iii.
..:
5
-0 .2
-0 .1 J
~a.4 -0.5 .-0.6 0.7 0.8 -0.9
V.(V), BASE EMITTER VOLTAGE Ie (mA) EMITTER CURRENT
.c8 SAMSUNG SEMICONDUCTOFI 88

INPUT AND OUTPUT CAPACITANCE ••• SAFE OPERATING AREA

REVERSE VOLTAGE
'DO -1000
f 1.0MHz <My cycle <2%
-500
50
"- ~
-
-200
.t- t- i'~11c-0)
.... 1--
!i
1!-100
"'i'o
"""" <1~:?>.t "~
Coo 11,-0) 8 -50 A5
........
1-2
o _,
u 0
0
""" i'-
1
Ji - 5
~ ;Ii
-2
~~
, 01-02 -0.5 1 -2 -5 10 -20 -50 -100
,-, -2 10 -20 -50
I
-100
VcaM, COLLECTOR-BASE VOLTAGE
Vc,(Y), COLLECTOR TO EMITTER VOLTAGE
V,,.(V), EMITTE~SE VOLTAGE
De
07
POWER DERATING
I
F
I" 0.4
~
"- '\.
~ 03
"\
0.2 "-
, '\
25 50 75 100 125
'\ 150 175
T,t°C), AMBIENT TEMPERATURE
KSA992 : PNP EPITAXIAL SILICON TRANSlsrOR
AUDIO FREQUENCY LOW NOISE AMPLIFIER

TO-92
Characteristic . Symbol Rating Unit

Emitter-Base Voltage VE80 " ':5 V
Collector· Current Ic -50 mA
Base Current IB -10 mA
Storage Temperature Tstg -95-150 ·C
1. emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Collector Cutoff Current ICBO VcB=-120V,IE=0 -50 nA

Collector Cutoff Current ICEO VcE =-100V, RBE=oo .. -1 J-IA
Emitter Cutoff Current I~BO VEB=-5V, Ic=O -50 nA
DC Current Gain hFE1 VCE=-6V,lc"'-0.1mA 150 500
hFE2 VcE=-6V,lc =-1mA 200 500 800
Base Emitter On Voltage VBE (on) VCE=-6V,lc =-1mA -0.55 -0.61 -0.65 V
Collector Emitter Saturation Voltage VCE (sat) Ic =-1.omA, IB=-1'mA -0.09 -0.3 V
Current Gain Bandwidth Product fr VcE =-6V; IE=1mA 50 100 MHz
Output CapaCitance Cob VCB = -30V, -IE=O 2 3 pF
f=1MHz
Noise Voltage NV 25 40 mV
hFE(2) CLASSIFICATION
Classification P F E
hFE(2) 200-400 300-600 400-800
STATIC CHARACTERISTIC STATIC CHARACTERISTIC

-1 a
r-W.,~V y
-0 8 .;77J , V-
LV lL y~
I
() -0
611'
V ./ L~I""
k'" ...... lL V ~~O!!~
i
0-0
V V
'11'
I---"" n
-~
u
I..---' I---""
j r-
,
V
-0. 2 I.- ~ \.~~02~
f--
~ l - f-
a
,!-O
- 20 - 40 - 60 80 100 -5 .
Vca~ COLLECTOR-EMITTER VOLTAGE

V..cV~ COLLECTOR-EMITTER VOLTAGE
•
BASE-EMITTER SATURATION VOLTAGE
DC CURRENT GAIN
100a -1 a
90a II ~ -5 Ic=10-18
~
Vce=-BV
800 -3
Z 700 ~
~ ~ -1 - -
~ VBElsat)
~ 600
~ -0 5
.~ 500 ., -0 3
~
g 400
i ...... f-"
1300 I' ~ -0 1
VCE{sat)
d
200
1- 005
~-OO3
100
a -0.0 1
-001 0.03 - 0.1 0.3 05 -1 5 10 -30--50 100 0.1 03 0.5 1 -3 -5 -10 -30 50 100
Ic(mAi COLLECTOR CURRENT

Ic(mA~ COLLECTOR CURRENT
POWER DERATING COLLECTOR OUTPUT CAPACITANCE
800 10
700 :e-~~e
5 ......
a ~
..~
3'
I'"
10a
" ~
I\.
'\
1l
i
II
0.5
03
Ii
25 50 75 100
~ 125 150 175 200
0.1
-·1 -3 -5 -10 -30 50 100 300--500 1000
T.(·C~ AMBIENT TEMPERATURE
Vco(~ COLLECTOR-BASE VOLTAGE
c8 SAM~UNG SEMICONDUCTOR 91
CURRENT GAIN-BANDWIDT!1 PRODUCT
l.tmA), EMITTER. CURRENT
COLOR TV AUDIO OUTPUT

COLOR TV VERTICAL DEFLECFION OUTPUT TO-92L

.Emitter-Base Voltage VEBO -6 V
Collector Current Ic -1 A
Base Current Is -0.5 A
Storage Temperature Tstg -55"'150 °C
ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic Symbol Test Condition Min

Typ Max Unit

•
Collector Cutoff Current Icso Vcs= -150V, IE= 0 -1 /AA
Emitter Cutoff Current lEBO VEs =-6V, Ic=O -1 /AA
Collector-Emitter Breakdown Voltage BVcEo Ic= -1 OmA, IB=O -160 V
DC Current Gain hFE VcE =-5V, Ic =-200mA 60 320
Collector-Emitter Saturation Voltage VCE (sat) Ic =-500mA, Is=-50mA -1.5 V
Base Emitter On Voltage VBE (on) VcE =-5V, Ic=-5mA -0.45 -0.75 V
Current Gain-Bandwidth Product fr VcE =-5V, Ic=-200mA 15 50 MHz
Output Capacitance Cob VcB =-10V,IE =0 35 pF
f=1MHz.
hFE CLASSIFICATION
hFE 60-120 100-200 160-320
PNPEPifAxlAL SI.LlCON T.RANSISTOR
STATIC CHARACTERISTIC DC CURRENT GAIN
-
-1.0 EMIT ER COMMaII' 1000
.~+A~
M ER COMM N
-
Ta -2S.oC IB=-15mA
T.=25'C=
-
500
-os !/ ,,-: 300
IV I.
lomA
I
0-0.6
'It IB~-BmA
~ 100
~
l-
so
tJv
~ 1 Z Vee.= 5V
!
III
rz:
rz: 30
IS"'"-jmA Q
I
B -0.4 V 4j5mA
0
g VCE=~2V
~V
Ia- 10
~ i
IB~-3mA
:,..~
-0.2
.,. I• ~~A
.1.
-s. 12
0
-16
1mA-20 10 30 50 100 300 - 500 1000 3000
V.,.(V), COLLECTOR-EMITIER VOLTAGE IdmA), COLLECTOR CURRENT .
DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE
1000s~~
-10
EMmER COMMON
VCE=-10V
EMn;:~R 2~~M
_5
500 ---Vce""-5V
-3
.~g - 11--·
~
!i -0. 5
~ -0 3
tli
.~ -0 .1 Li-"
30 I--,--+-t-HH--H*--+~~--++H-H
!.J-o.o Ic/1B=10
=5
-0.03
1~1LO----~~3~0-L_~5~0~_~'~OLO-----L-_~30~0~_-5~00-L_L,LO~00 -0.0 1
- 3 5 10 30 50 100 -
300 500 - 1000

BASE-EMIITER VOLTAGE COLLECTOR OUTPUT CAPACITANCE

-1.0 EMITTER COMMON 100
Vce=-5V I
-0. 8 II 50
i§ 0
U_ O.6
,
J 0
" 1"1'1'
to 4
I
~ I
-0.2 II
o 0.2 0.4 - 06
J - 0.8, 1.0
1
-30 -50 -100 300
-4 -5 -10
V..· 'sal) 1Vl, BASE-EM"!£'! VOLTAGE
VcaM. COLLECTOR-BASE VOLTAOE
c8 SAMSUN~ SEMICONDUCTOR 94
CURRENT GAIN-BANDWIDTH PRODUCT SAFE OPERAnNG AREA

1000 -1 0
I ;':~2~~N s
-3 f-- Ie MAX.' (PUise
0
1 I ~~~~
V - 5V
1-
il
0.sF='
-0. 31--
~
+--'1" .";:0..
~ ~
" - 2V t -0. t
~-o.oS
~ ·8-0.03 "'~d"
;;f C)
ll_o.o 1
-0.005 ~~~
-0.003 ~=
;;i-
1 -0.00 1
-1 5 -10 -30-50 -100
IT
-1 3 -5 -10 -30 -50 -100 -300 3 300-500-1 00
IdmA~ COLLECTOR CURRENT VceI~ COLLECTOR.£MITTER VOLTAGE

• Complement to K8C2710 TO-928
• Collector Dissipation Pc = 300mW
Collector-Base Voltage Veeo -40 V

Collector-Emitter Voltage Veeo -20 V
Emitter~Base Voltage Veeo -5 V
Collector Current (DC) Ie (DC) -SOO mA
• Coflector Current (pulse) Ie (pulse) -700 mA
Collector Dissipaiton Pc 300 rrfJV
Storage Temperature Tstg -55-150 OC
• PW:s~OmS, duty Cycle:s 50%. 1. Emitter 2. Collector 3. ~..e
ELECTRICAL CHARACTERISTICS (Ta = 25°C) .
Characteristic Sy,,!bol Test Condition· Min Typ Max Unit
Collector-Base Breakdown Voltage BVcao le=-100pA,le=0 -40 V

Collector-Emitter Breakdown Voltage BVceo le=-10mA, le=O -20 V
Emitter-Base Breakdown Voltage BVEBO IE=-100pA,le=0 -5 V
Collector Cut-off Current leBO Vee=-25V,le=0· -100 nA
Emitter Cut-off Current lEBO Ver;=-3V,le=O -100 nA
°DC Current Gain hFe Vee=-W,le=-100mA 40 . 400
• Collector-Emitter Saturation Voltage Vee (sat) Ie';' -500mA,le = -50mA -0.3 -0.4 V
o Base-Emitter Saturation Voltage VeE (sat) le=-SOOmA,I.=-50mA' -1.0 -1.3 V
• Pulse Test: PW::; 350,.s, duiy cycle::; 2% ,
hFE CLASSIFICATION
hFE 40-80 70-140 120-240 200-400
KSA1150 . PNP EPITAXIAL SILICON TRANSISTOR

-5011 -1000
-460
--
-500
I - I-VcE--1V
L la--l.8mA -300
V ...... ..... la--1i"
I-~ laj-1.2j 1-100
VI/'
fit,...-- ..---- 1B __1.omA D
--
-300
, ~I ~
i
-SO
-250 la--G.8mA
j...--- -30
-200 laI __, I
Lso . . . 1-- f -1.
.I!
l--" la-1-DAf i -5
-100
-so Jr--+ A -
-3
1
o -2 -4 -8 -8 -10 -12 -14 -16 -18 -20 -0-2 -CIA -C18 -C18 -1.0 -1.2
Ya!(V),~ER\IOI._ -(Y). -...nTER ¥DLTAOE
DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE

1000 •
-1
51-- fe-lOla
!iOO ~VC. __ l, I
I -
i
3
300
I§ -o.s 1 V8E(1It)
i'.. g -Q3
--
--
IB -0.1
LV
>
30 i._ V""(18I)
--- i-o.o3
10
I ! iI
J Ii
I'
-om
-1 -3 -$ -10 -30 -SO -100 -300-500-1000 -1 -3 -5 -10 -30 -SO -100 -300-500 -1000
Ie {mAl. CQU.ECI'OR CURRI!NT I e . CQU.ECI'OR CIRINT

100
!_lMHz
IE-O
t--t-
30
r-..
T"""- t'1'-
r--...
5
1
-Cl5 -1 -3 -5 -10 --30
Yeo (VI; COLLECIOA-IIAII \IOI.1lUJE
KSA1t74 PNP EPITAXIAL SILICON TRANSISTOR

TQ-92S
-. Complement to KSC2784
Collector-Base Voltage Vcoo -120 V

Collector-Emitter Voltage VCEO ,-120 V
Emitter-Base Voltage VEoo -5 V
Base Current Is -10 mA
Collector Dissipation Pc 300 mW -
, _ Emitter 2. CoHector 3. Sase
ELECTRICAL CHARACTERISTICS (Ta=25°C)-
Collector Cutoff Current Icoo Vcs =-120V,IE=0 -50 nA

Collector Cutoff Current IcEo VcE=-100V, RBE=oo -1 jJ.A
Emitter Cutoff Current IEoo VEB =-5V, Ic=O -50 nA
DC Current Gain hFEl VcE=-6V,lc =-0.1mA 150 500
hFE2 VCE=-6V,lc=-1mA 200 500 800
Base Emitter On Voltage VSE (on) VCE=-6V, Ic=-1mA -0.55 -0.61 -0.65 V
Collector Emitter Saturation Voltage VCE (sat) Ic =-10mA,l s=-1mA -0.09 -0.3 V,
Current Gain Bandwidth Product fr VcE =-6V,IE=1mA 50 100 MHz
Output Capacitance Cob Vcs=-30V, IE=O 2 3 pF
f=1MHz
Noise Voltage' . NV 25 40 . mV
hFa2) CLASSIFICATION
Classification P F E
hFd2) 200-400 300-600 400-800
c8 SAMSUNG SEMICONDUctOR 98

-10 -10
Ia=~ ::.- ~
- U~ ~J y
.; ~,r wt:. k V
1. JO,.A
=
-08 -L
~'y ... -8
i
~
U -06
/
V'
V
/'
V ;...J?
i5a:
a:
"
u
1/
/'
",=J6,.1\
1
-
-6
V 12~
~
~. V
V
V ""
./
V
~
...,.J_o~ ~
u
j (11
'"
0 ",=-1,.1\.= =
-- -
0-04 -4
........
-~
U U
V ~ I'
j E
,
V
-02 ~
I-- 1.L-02~ li
-2 1a=-tA
I-- ~ ~ j ",
1
~=o 80 -
18=01
-
20 40 - 80 - 100
Vc,(V), COLLECTOR-EMmER VOLTAGE
Vc,(V), COLLECTOR-EMITTER VOLTAGE
DC CURRENT GAIN
1000
900
800
II
VCE =-6V
-1 0
5
3
Ic=10~p
I
'700
~ 11-- .
Vee(satj
~ 600
5
a::. 500 3
B
g 400
...... 1-'
i 300
1
Vce(satj
5
200
3
100
0 -0.0 1
-001 0.03 01 0305 - 1 3 5 - 10 - 30-50 100 Pl -03-05 1 -3 -5 -10 -30 - 50 - 100
POWER DERATING COLLECTOR OUTPUT CAPACITANCE

800 0
700
,,=ttB
f=lMHz
5
~ 600 3
I T"--
~
I
i
500
400
30
0
I 1
5
!
.-.-'''
I
200
100
"'" .........
i'....
3
- r- -
25 50
T.,(·C~
75
""
100
AMBIENT TEMPERATURE
125 150 175 200
1
-3 -5 -10 -30-50 100
Vca(V~ COLLECTOR-BASE VOLTAGE

30G-500 1 aoo
c8 SAMSUNG SEMICONDlJCTOR 99
KSA11'14 ,. PNP EPITAXIAL SILICON TRANSISTOR
CURRENT GAIN-BANDWIDTH PRODUCT
6'~.'~O~3~05~'~~3~5~'O~~30~50~'00
le(mA), EMITTER CURRENT
ciS SAMSUNG SEMICONDUCTOR 100


• Complement to KSC2785 TO-92S
• Collector-Base Voltage VCBo=-60V


1. Emiiter 2. Collector 3. Base
Collector-Base Breakdown Voltage BVCBO Ic =-100pA,IE=0 -60 V

Collector-Emitter Breakdown Voltage BVCEO Ic=-10mA, IB=O -50 V
Emitter-Base Breakdown Voltage BVEBo IE = -10pA, Ic =0 -5 V
Collector Cut-off Current ICBO VcB =-60V,IE=0 -0.1 pA
Emitter Cut-off Current lEBO' VEB =-5V,lc=0 -0.1 p.A
DC Current Gain hFE VcE =-6V,lc=-lmA 40 700
Collector-Emitter Saturation Voltage VCE(sat) Ic =-100mA,IB=-10mA -0.18 -0.3 V
B!lse-Emitter On Voltage VBE (on) VcE =-6V,lc=-lmA -0.50 -0.62 -0.80 V
Current-Gain-Bandwidth Product h VcE =-6V,lc =-10mA 50 180 MHz
Output Capacitance Cob VCB=-10V,I E =0 2.8 pF
f=lMHz
Noise Figure NF VCE=-6V,lc =-0.3mA 6.0 20 dB
f=100Hz, Rs=10KO
hFE CLASSIFICATION
Classification R 0 Y G L
hFE 40-80 70-141) 120-240 200-400 350-700

'KSA1175 PNP EPITAXIAL SILICON TRANSISTOR
- ,
STATIC CHARACTERISTIC BASE-EMITT\OR ON VOLTAGE
i I
8_ 10
_ , , _
§ -5
:::I _3
8 f-
i
{
e1
-o.s
-D.3
1111lll l
-0,1 L....!.-...L---..l_L.."!-J.-;--'-_L-.,L..-L-'---I
o -2 -4 -8 -8 -10 -12 :-14 -16 -18 -20 o -0.2 -0.4 -0.6 -0.6 -lD -t2
VOl! (VI, cou.ecroR-£IIITTER VOLTAGE , Va! (VI, 1lASE-EMITTER VOLllIGE

1000 1000
I=: Vee_ -61/ I~CE--6I/
z
~100
~~
I:
g
,,/
i 10
5
3
1 0
-0.1 -0.3-0.5 -1 -3 -5 -10 -30-60 -100 -115 -1 -3 -5 -10 -00
I, (mAl, COLLEcroR CURRENT Ie (mA), COLLECTOR CURRENT

-10
5~
1C""101s
, , f=1JHl
3
10
~-O I
,-
t-
1
VBE(sa11
""
,,"
f-- f'
I-~ j-'
1 VeE (sat)
--- \'-.. ~
-ClD1 1
-0.1 -0.3-0.5-1 -3 -5 -10 -30-50 -100 -1 -3 -5 -10 -30 -50 -100 -300
Ie (mA), COLLEcroR CURRENT Vea (VI, COLLEcrolWlASE VOLTAGE

KSA1182 PNP EPITAXIAL
. SILICON TRANSISfOR .
LOW FR,EQUENCY POWER AMPLIFIER

• Complement to KSA2859 SOT-23
ABSOLUTE MAXIMUM 'RATINGS (Ta=25°C)

Emitter-Base Voltage Veeo -[5 V
1. Base 2, Emitter 3, ColleCtor
Collector Cutoff Current Iceo Vce =-35V. le=O -0,1 ,..A

Emitter Cutoff Current leeo VEB =-5V.lc=0 -0,1 ,..A
DC Current Gain hFF1 Vce =-1V.lc =-100mA" 70 240
hFe2 Vce=-6V. Ic=-400mA 25
Collector-Emitter Saturation Voltage Vce(sat) Ic=-100mA,le=-10mA -0,1 -0,25 V
Base-Emitter On Voltage Vee(on) Ic=-:-100mA. Vce =-1V -0,8 -1.0 V
Current Gain-Bandwidth Product fr Ic=-20mA. Vce =-6V 200 MHz
Output Capacitance Cob Vce= -6V, le=O 13 pF
f=1MHz
Marking
hFE CLASSIFICAT,ON
Classification 0 y
hF" (1) 70-140 120-240
hFe grade

KSA1182 ,PNP. EPITAXIAL SILICON TRANSISTOR
t-
-200 -1000
-180
1.6mA I
-500 ~ Vce=-1V
-- Is=-1.4mA
.",..... Is ",,'-1.2mA
-300
i -,140 ~ -' I
./ ....... ;;;;;;; 'e-- 1,.Omj
-
If
~-12O
Ia--.o.emi
I-roo II..".
~ -80
i-
J/
~
II
80
".
- 1e--o.6~A
's-=-O.4mA
I. I
i
J/
-1 0
-40
'e,"-o·rA S
3
"...
-20
o -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
1
.....0.2 -0.4
II
-0.& -0.& -1.0 -1.2
V"" (VI. COLLEC1OfI.EMmER YOLTAGE V.. (VI. _-EMITTER Yl)LTAIliE
DC CURRENT GAIN ' BASE-EMITTER SATURATION VOLTAGE
lOOOmlllfBl_
500
~ VeE
3OO~~~~~~r1~+H»--+~~HH
lV
-10
COLLECTOR-EMmERSATURATION VOLTAGE
~Ic 101e
I 1
I L....J.~
g
roo ..l-!-H+t1t--ti'-!-lJ
VBE (sat)
i ~~1-++~~-+-rrH~--~~+HH 1 V
VeE (sat)
10 L--'-~~L.W._'--''''''''.J.I.L'''-'''''''-'-I..U.u.u -ClO1
-1 -3 -S -10 -30 -50 -100 -300-500-1000 -3 -5 -10 -30 -50 -100 -300-500 -1000
Ie (mA). COLLECIOR CURRENT, Ie (mAl. COLLECIOR CURRENT
JM~
20
..
IE=O
r-..
i""'"
-1 -3 -f -10 -300
Veo (VI. COLLECIOR-IIASE YOLTAGE
c8 SAMSUNG SE,..ICONDUCTOR 104


• Complement to KSC3265 50T-23

Collector Current Ic -SOO mA
Base Current ' IB -160 mA
Storage Temperature Tstg -55"'150 DC
1. Base 2. Emitter 3. CoUee!or
• Refer to KSA643 for graphs.
Collector-Emitter Breakdown Voltage BVcEo ic=-10mA, IB=O -25 V

Emitter-Base Breakdown Voltage BVEBO IE=-1mA, Ic=O -5 V
Collector Cutoff Current ICBO VCB =-30V, IE=O -100 nA
Emitter Cutoff Current lEBO VEB =-5V, ic=O -100 nA
DC current Gain hFEl VcE =-1V,lc=-100mA 100 320
hFE2 VCE =-1V, ic=-SOOmA 40
Collector Emitter Saturation Voltage VCE (sat) Ic =-500mA,IB=-20mA -0.4 .v
Base-Emitter (om) Voltage VBE (on) VcE =-1V, ic=-10mA -0.5 -O.S V
Current Gain-Bandwidth Product fr VcE =-5V,lc=-10mA 120 MHz
Output CalJa(;,tanCe Cob VcB =-10V, I, =0 1~ pF
f=1MHz
Marking
ClaSSification 0 y
hFE (1) 100-200 160-320
hFE grade
c8 SAMSUNGSEMICONDUCTOR .105
KSA13t8 PNP EPITAXIAL SILICON TRANSISTOR

TO-92S
=
• Collector Dissipation Pc 300mW
ABSOWTE MAXIMUM RATINGS (Ta =25°C)

Collector-Emitter Voltage Veeo -25 V
Collector Current (DC) Ie (DC) -300 mA
• Collector Current (pulse) Ic(pulse) -500 mA
Collector Dissipation Pc 300 rnW
1. Emitter 2. CoHector 3. Base
• PW:;;10ms, duty cycle :;;50%

Collector-Base Breakdown Voltage BVeBo le=-1001A,le=0 -30 V

Collector-Emitter Breakdown Voltage BVeeo le=-10mA, IB=O -25 V
Emitter-Base Breakdown Voltage BVeBo Ie'" -101A, Ie =0 -5 .V
Collector Cut-off Current leBO VeB=-25V,le=0 -100 nA
Emitter Cut-off Current leBo VEB =-3V,le=O -100 nA
• DC Current Gain hFE VCE= -1V, le= -50mA 70 400 nA
• Collector-Emitter Saturation Voltage Vee(sat) Ic·=-300mA,IB=-30mA . -0.35 -0.6 V
• Pulse Test: PW:;; 350,.s, duty cycle:;; 2%
hFE CLASSIFICATION
hFe 70-140 120-240 200-400

STATIC Cl:!ARACT~ISTIC BASE·EMITTER ON VOLTAGE

-1000
lL·--l~
la __ 1AmA. .! -500
-300
-- -II<:E __IV
r:=
B·120 /Iv
~-loo
V
V
"V _
. . . . t- -- IB-~I.2mA
la __ 1.o,
IB __ D.8mA
IB __ o.&mA
iB
e
~ -30
-100
-50
• -80 8
i
.II -80
V
IB-i~i- ! -1 0
V"" .II
5
-40
-20
..... IB--o.bA 3
o 1 I
o -1 -2 -3 -4 -5 -6 -7 -8 -8 -10 -0.2 -~ -.D.6 -M -ID -1.2
VCE (V), COLLECIOR-EllmER WlLTAIIE _ (V), IlASE-EMlTTER WlLTAIIE

-10
-5 r-- le_10la
~ -3
300 r--- . -H-ttlfttt--H+t+tH+-+++++t-H1 ~z
.~ ~ -1
I~
_(sat)
~ -M
l..-I--H-tt!'l'tt'"""i-+-I-W
~ -03
g
i 50
-~~-
f-+--+++++I-H-----+--+ +-+++H+---+--l\H-I-H-H I~ -~1
/
VCE("'I
j'-M5
i-o.os
10~~~~w-~~~~__~~~~ -D.01
-1 -3 -5 -10 -30 -50 -100 -3OO-500-~ -1 -3 -6 -10 -30 -50 -100 -300 -500 -1000
Ie (mA), COLLECTOR CURRENT Ie (mAl, COLLECIOR CURRENT
JJ
,
I
I
10
...",
IE"O
II
Si'-;
I
~
8 .3
I",
-
I--
I i I I
-1 -3 -5 -10 -30 -50 -100 -300
Vee (V), COLLECIOR-BASE VOLTAGE

:kSB5$4A PNP EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY POWER AMPLIFIER

TO-92
• Complement to KSD47IA
• CollfJCtorCunent Ic=-1A
• Collector Dissipation Pc=800mW
ABSOLUTE MAXIMUM RATINGS (T. =25°C)
Collector-Base Voltage VCrMJ -30 V

Collector-Emitter Voltage VCEf) -25 V
Emitter-Base Voltage VerMJ -5 V
Collector Current Ic -1.0 A
.Collector Dissipation Pc 800 rWN
JlJnction Temperature Tj 150 OC
1. Emitter 2. Base 3. CoJlector
ELECTRICAL CHARACTERISTICS (T. =25°C)
Characteristic Symbol· Test Conditions Min lYP Max Unit
Collector-Base Breakdown Voltage BVcrMJ Ic=-100pA,le!"0 -30 V

Collector-Emitter Breakdown Voltage BVCEf) Ic =-10mA, iB=o -25 V
Emitter-Base BlJtakdown Voltage BVErMJ Ie = -100pA, Ic-O -5 V
Collector Cut-off Current lcao VcB =-3OV,le=0 -0.1 pA
DC Current Gain hFE Vce =-1V,lc =-1oomA 70 400
Collector-Emitter Saturation Voltage Vce (sat) Ic=-1A,IB= -0.1A -0.5 V
Base-Emitter Saturation Voltage VBe (sat) Ic =-1A,IB=-0.1A -1.2 V
Current-Gain-Bandwidth Product IT Vee = -6V, Ic=-10mA 110 MHz
Output Capacital)ce Cob VCB=-6II, f=1 MHz, 18 pF
le=O
hFE CLASSIFICATION
Classification . 0 y G
hFE 70-140 120-240 200-400

KSB564A PNP EPITAXIAL SILICON TRANSISTOR
i':._~
B30~
li f--+--t-Hf+t+l-+-+-+.o..f+t+It- -
1 10 _ _
-0.2
-0.1
o -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -10 -30 -50 -100 -300 -500 -1000 -3000

Veo M, COLLECIOfI.EMmER \101._ _
Ie (mA), COI.LECJ:OII CURRENT
CURREIfT GAlN-BANDWIDTH PRODUCT COLLECTOR-EMrrTER SATURATION VOLTAGE
, 200 -10
vJJJ II I
i
5-
II I 3 - 1c-101a
II -
100
1
" " Va. lUI)
so
1 /"
VeE(aat)
f
~
10 -o.ot
3 5 10 30 SO 100 200 300 -1 -3 -5 -10 -30 -SO -100 -300 -1000,
Ie (mAl, COLLECIOII CUIIREHT Ie (mAl, COLL.EClOR CUMbT
COLLECTOR OUTPUT CAPACITANCE SAFE OPERATING AREA

-10
5
-3 ~:;~~J;.
I-
'[loom.
1
r=
:t-0.1
~
t-.
""
"\
i -o.os
-D.03
1~__~J-~~~__~~~1~~~ -o.ot
-1 -3 -5 -10 -30 -SO -100 -1 -3 -5 -10 -30 -SO -100

KSB81 0 PNP EPITAXIAL SILICON TRANSISTOR
AUOIO FREQUENCY AMPLIFIER

• Complement to KSD1020 TO-92S
ABSOLUTE MAXIMUM RATINGS (Ta =25°'C)
Characteristic Symbol Ratil19 Unit

Emitter-Base Voltage VEBO -5.0 V
Collector Current (DC) Ic -700 mA
"Collector Current (Pulse) Ic -1.0 A
Junction Temperature T, 150 °C
• PW ~ 10 ms, duty cycle ~ 50 %

1. Emiiter 2. Collector 3 .. Base
Collector Cutoff Current Ic~ VcB =-30V, 1.=0 -100 nA

Emitter Cutoff Current lEBO VEB =-5V, Ic=O -100 nA
"DC Durrent Gain hFEl VcE =-lV,lc =-100mA 70 200 400
hFE2 VcE =-lV,lc =-700mA 35 100
"Base Emitter Voltage VBE VCE = -6V, Ic =-10mA -600 -640 ..,.700 mV
".Collector-Emitter Saturation Voltage VCE(sat) Ic =-700mA,IB=-70mA -0.25 -0.4 V
"Base-Emitter Saturation Voltage VBE(sat) Ic= -700mA, IB= -70mA -0.95 -1.2 V
Output Capacitance COB VCB= -6V, IE=O, f;= 1MHz 17 40 pF
Current Gain-Bandwidth Product h VcE =-6V,IE=10mA 50 160 MHz
" Pulse Test; PW~350 iJ$, Duty Cycle .s; 2% Pulsed
hF~(1) CLASSIFICATION
Classification 0 V G
hFe(l ) 70-140 120-240 200-400

KSB81 0 PNP EPITAXIAL SILICON TRANSISTOR

-50
V i-"'"
,... 10oo~~.
/'
i"""
;,...-- 1.+50"t 5oo~
f---+-+-++++.ttt---+-iVce=-1V
/ V v:Ie=-JOO,.A 3oo~--+-+-+~+++H---+-+-+~++tH
-
....... .......
".
,.,.
I'·~~!~I~~~~~~
i"""'"
~ f-
1.= 11501
r- 1.~-10~
I........ ~
-10
Y --- ~ f-"~
1e::-5O,.A
i 5°t==+=+++~m===l=H++m
30~-~-+-+~rtHt---r-+-+1-rtHH
,,-
o 10L-__ ~~-L~~LU ____ ~~-L~~LU
o -10 -20 -30 -40 -50 -10 -30 -50 -100 -300 -500 -1000
V"",y), COLLECTOR.£MITTER VOLTAGE Ic:(mA~ COLLECTOR CURRENT
BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT

-1000 1000
V..(BBl)
w 0
~-600 0 VCE=-6V
>-300
~
! -100 ./
V ..
V 0
0
- r-..
CI) 0
i::; VcelBBl)
ill -50 0
ii .......
> -30 5
!-"'
J 10=10"
-1 0 1
-10 -30 -50 -100 -300 -500 -1000 -1 -3-5 -10 -30 -100 -300 -1000 -3000-10000
Ic:(mA~ COLLECTOR CURRENT lc(mA~ COLLECTOR CURRENT

KSB811 . PNP.EPITAXIAL SILICON TRANSISTOR

• Complement to KSD1021 TQ-92S
• Collector Current le= -1A

• Collector DIssipation Pe =350mW
ABSOLUTE 'MAXIMUM RATINGS (Ta =,25°C)
C"aracterlstlc Symbol . Rating Unit
Collector-Base Vohage Vceo -30 V

ColleclOr-Emitter Voltage Vceo ' -25 V
Emitter-Base Vohage Veso -5 V
Collector Current Ie -1.0 A
Collector Dissipation Pc 350 rWN
Junction Temperature Tj 150 ,oC
Storag~ Temperature Tstg -55-150 OC
1, Emliter 2. Collector 3. Base
ELECTRICAL CHARACfERISTICS (Ta =25°C)
Characterlsllc /
Symbol 'rest Condition Min ~p Max Unit
Collector-Base Breakdown'Vohage BVeBO Ie" -100,.A. le"O -30 V

Collector-Emitter Breakdown Vohage , BVceo Ie" -10mA. iB =0 -25 V
Emitter-Base Breakdown Voltage BVeBO le=-100,.A,lc·0 ' -5 V
Collector Cut-off Current lceo VcB --3OV, le"'O -0.1 ,.A
DC Current Gain hFE Vce =-1V,lc ",-100mA 70 400
Collector-Emitter Saturation Voltage Vee (sat) Ic--1A,IB= -O.1A '. -0.5 V
Base-Emitter Saturation Vohage VaE. (sat) Ic=-1A,IB ... -0.1A -1.2 V
Current-Gain-Bandwiclth Product IT Vee'"' -6V, le--1OmA 110 MHz
Output Capacitance Cob VeB--SV, f=1 MHz. 18 pF
Ie';' 0
hFE CLASSIFICATION
o y G
70-140 120-240
1

KSB811 PNP EPITAXIAL SILICON TRANSISTOR
-0.9
.. -OB
iIi-G.7
Ii
(J-D.6
~-~
~-OA.-~~
g-G.3
.II
4'"""'~"""'--'''''''''""'"-t'''-,2mA-'---~
-0.1
o -1 -2 -3 -4 -5 -8 -7 -8 -9 -10 .-10 -30 -50 -100 -300 -sOo -1000 -3000

.Veo M, COLLEClOfI..EIIITTER 1IOI.TAQE Ie (mA), COLLECIOR CURRENT
IlASE-EMITTER SATURATION VOLTAGE
CURRENT GAJN.8ANDWIOTH PRODUCT COLLECTOR...eMmER SATURATION VOLTAGE
200 -10
v..LW !II I· 5
3r--
ie_1mB
-- . - ~ I-
- ,
""
1 VeE (sat)
"",'"
1
, VeE (sat)
10 -o.ot
-1 -3 -6 -10 -30 -50 -100 __ -, -3 -5 -10 -30-50 -100 -300-1000
Ie ImA), COLLEc:IOII CUIUIENT Ie (mAl, COLLECIOR CURIIENT
COLLECTOR OUTPUT CAPACITANCE POWER DERATING
.,00C·-- "fit_~_ 500
450
50 .. t-1MHZ:_+.+-I+ttt----+--++-t-+t+H
3O~~r+-rHH+r----+-+-r++t+H
400
Z
I·: -,
350
1300 \
\
i 250
i
-
-0·_-
2
i 200
1\
!
B ~ 150
100 .~
50 r-...
1~__~~~~~__~~~~~~
-3 -5 25 50 75
\
100 125 150 175 200 225 250
-1 -10 -30 -50 -100
r. (-C), AMIIfENT ~ATUR~

itSB1116/1116A PNP'EPtrAXIAL SILlCO.N TRANSistoR

TO-92
• Complement to KSD161611616A
Collector-Base Voltage : KSB11'16 Vcet:J -60 V

: KSB1116A -80 V
Collector-Emitter Voltage KSB1116 VCEO -50 V
: KSB1116A -60 V
Emitter-Base Voltage Veet:J -6 V
Collector Current (DC) Ic -1 A
-Collector Current (Pulse) Ic -2 A
Collector Dissipation Pc 0.75 W
Junction Temperature Tj 150 °C . f. Emitter 2. Collector 3. Base
·PW.'S10ms, Duty Cycle~50%
ELECTRICAL CHARACTERISTICS (Ta == 25°C)
Collector Cutoff Current Icet:J Vce=-60V, le=O -100 nA

Emitter Cutoff Current IEet:J VEe=-6V, Ic=O -100 nA
• DC Current Gain : KSB1116 hFE1 Vce=-2V,lc=-100mA 135 600
: KSB1116A 135 400
hFE2 Vce =-2V,lc =-1A 81
• Base Emitter On Voltage VBE (on) Vce =-2V, Ic=-:-50mA -600 -650 -700 mV
·Collector Emitter Saturation Voltage VCE (sat) Ic=-1A; le=-50mA -0.2 -0.3 V
• Base Emitter Saturation Voltage VBE (sat) Ic=-1A,le=-50mA -0.9 -1.2 V
Output CapaCitance Cob Vce =-10V,le=0 25 pF
f=1MHz
Current Gain Bandwidth Product fr VcE =-2V, Ic =-100mA . 70 120 MHz
· Turn On Time ton Vcc =-10V,lc=-100mA 0.07 /As

Storage TIme ts le1 =.-le2=-10mA 0.7 /AS
Fall TIme tf VBE (off);: 2rv3V 0.07 /AS
• Pulse Test: PWS350/AS, Duty Cycle.'S2% Pulsed
Classification Y G L
hFE (1) 135-270 200-400 300-600
*
KSB1'116/1116A PNP EPITAXIAL SILICON TRANSISTOR

-10r -1.0
I.~~~
#D~~
I"
-80
,-
,.=1 200
-- - .:):£-"
~V
'/_~.
~=-3.5mA
,L
5_. mA
-60
'r-
1.=~'50.A
- -
-
r:
Y": _-
".... r-
=_{i;mA~
I,=-J om/
e... - J5mA =
iB~~'00
I-_ 0
A
4
V =-.'.OmA
I V
,
le-- 5O,.,A
=-J.5mA
-20 -0.
2 J
- - - - 10 -0.2 -0.4 -06 0.8 -1.0
Vc,,(V}, COLLECTOR-EMITTER VOLTAGE Vc,(Y~ COLLECTOR-EMITTER VOLTAGE

-10
1000 _ __
500 VeE. -2V
300
.......
;':1111111
g
1 10 _ _
-001 -0.03 -0 , -03 -1' -3 -5 -10
Ic(A~ COLLECTOR CURRENT ""AI, COLLECTOR CURRENT

-10 o. 8
-5
1--[\
-3
o. 6 \
I
~·-0.5
1 ms
"\~ ~
.",
I15
\
"1\
0 4.
~ -03
"~ -0 ~ \
1
-0.05 ~
~ O. 2 \
-0.03 Iii \.
-0.0 1 I -
\
1 -3 5 - 10 30 50 100 300 500 1000 o 25 50 75 100 125 150 175 200
V.,.{V}, COLLECTOR-£MtTTER VOLTAGE T~·C~ AMBIENT TEMPERATURE

KSB1116/1116A PNP EPITA.XIAL SILICON TRANSISTOR
CObLECTOR OUTPUT 'CAPACITANCE CURRENT GAIN-BANDWIDTH PRODUCT
.lO00~mm~
sooa
300r--+--+-t-+l-++tt---+-+--H-H-t1H--t--+-I
:;.~~o~
-1 -3. 5 -10 -30 50 -100 300 -h~.0~'~-~0~03~~0~.'~-~0~3~~-~'~~-+3~-5~-~'0

lelA), COLLECTOR CURRENT
Vco(V), COLLECTOR-BASE VOLTAGE
SWITCHING TIME
10
~CC10'1:~~~
1f--
5
....-
3
"-
:--..
.1
0.05
•
0.03
\
0.0 1
-0.001 0.003 -0.01 -0.03 -0.1
I
0.3 0.5 -1
1c(A), COllECTOR CURRENT

KSC184 NPN EPITAXIAL SILICON TRANSISTOR
AM FREQUENCY CONVERTER
IF AMPLIFIER TO-92
• Current Gain Bandwidth Product fT =100MHz ~p)

• Complement to KSA542
ABSOWTE MAXIMUM RATINGS (Ta =25°C)
Characteristic Symbol RatIng Unit
Collector-Base Voltage Vcso 30 V

Collector-Emitter Voltage Vceo 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current 10 50 mA
Collector Dissipation Po 250 rrW
Storage Temperature Tstg, -55-150 DC
1. Emitter 2. Base 3 Collector
Characteristic Symbol Teat Conditions Min ~p Max Unit
Collector-Base Breakdown Voltage BVcso 10 .. 100pA,le=0 30 V

Collector-Emitter Breakdown Voltage BVceo 10-10mA,IB=0 25 V
Emitter-Base Breakdown Voltage BVEBO le--1OpA,10=0 5 V
Collector Cut-off Current Icso V oB ",25V, IE ",0 0.1 pA
Emitter Cut-off Current leBO Vea -5V, 10 =0 0.1 pA
DC Current Gain hFE VoE",eN,lo=lmA 40 1000
Collector-Emitter Saturation Voltage Vee (sat) 10=10mA,IB=lmA 0.1 0.2 V
Current Gain-Bandwidth Product h VoE-eN,lo",lmA 100 MHz
Output Capacitance Cob VoB=eN,IE=O 2.6 4.4 pF
f=lMHz :
hFE CLASSIFICATION
Clasalflcation R 0 y G L
hFE 40-80 70-140 120-240 200-400 350-700
c8 SAMSUNG ,SEMICONDUCTOR 117

KSC184. NPNEPITAXIAL SILICON .TRANSISTOR
STATIC CHARACTERISTIC BASE-EMITTER ON \fOLTAGE

50 1000
I I· 500
j ..,~,,,- f-- 300
.1- Vee ..
--
40
j••1.o,.A_
I'
f--
tr- I---
i..,J",,_ f--
".. I -i..,J",,_ r--
lo-"'- r- -L.80~_ f--
[..--- I-- 1..80~_ f--
,......
10 i..40~_ f--
1•. 2O~_ '-- I
o I I 1 II
o • 10 o (1.2 0.4 (1.6 (l6 1.0 1.2
Vel! M. COLLECTO~IT1ERVO~T~ V.. (V).IIASE-EMITTER WLTAGE'

240 1000
220
II
200
v~~JJ f-- Vee ..
180
1
i
58
160
'40
'20
'00
1 80
I"""" - ,/
:..-
80
·40
20
o 10
(1.1 0.3 (l5 3510 ·3050100 -(1.1 -0.3-o.s-1 -3 -5 -10 -30 -50 -100
Ie (mA). COUECIOR CURRENT Ie (mA); COLLECTOR CURRENI'

COLLECTOR-EIIITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITA.NCE
10
-tc_1018- LLJH le-,O
.....
~
..... " .....
Vce(oaI) __
-- ~.
.3 10 30 . 50 100 , 1 10 30 50 100
Ie (mAl. COUECIOR CURRENT Vea (V). COLLECIOII-BASE'IIOLTAGE
c8 SAMSU~ SEMICONDUCTOR 118

KSC388 NPN EPITAXIAL SILICON TRANSISTOR .
TV FINAL PICTURE IF AMPLIFIER APPLICATIONS

TO·92
• Gpe =33dB (l)tp) (f=45MHz)
ABSOLUTE MAX1MUM RATINGS (Ta =25°C)
Collector-Base Voltage VCBO 30 V

Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VESo 4 V
Collector Current Ic 50 mA
Characteristic Symbol Test Conditions Min l'tp Max Unit

I
Collector-Base Breakdown Voltage BVCBO Ic=10pA,IE=0 30 V
ColleCtor-Emitter Breakdown Voltage BVcEO Ic=5mA,la=0 25 V
Collector Cut-off Current Icao Vca=3OV,IE=O 0.1 pA
Emitter Cut-off Current lEBO VEa='.JII,lc=O 0.1 pA
DC Current Gain hFE VCE = 12.5V, Ic =12.5mA 20 200
Collector-Emitter Saturation Voltage VCE (sat) Ic=15mA,la=1.5mA 0.2 V
Base-Emitter Saturation Voltage VaE (sat) Ic=15mA,la=1.5mA 1.5 . V
Output CapaCitance Cob Vca=1OV,IE=O, f=1MHz 0.8 2 pF
Collector-Base Time Constant CC'rbb' Vca=1OV,IE",-1mA 25 ps
f=30MHz
Current Gain-Bandwidth Product h Vee = 12.5V, Ic =12.5mA 300 MHz
Power Gain Gpe Vee =12.5V, f=45MHz 28 36 dB
IE=-12.5mA
c8 SAMSUNG SEMICO.NDUCTOR 119

STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE,

6
I
4 Vcs_fN
1e-70""
f
i50~~I~~§~I~~§~!~~
I- 12
IB-so,A
I
u V
I
10
1e-5O,.A
I:~g~~.~~
if
1e.40""
8
,/ 8 5.0~
V
IB .. ao,.A 1,2,0 \---1---1--++-,1---1----"
1£_20""
~ ~~~~!!~~~.
le_l0"" o,21--+--I--+f--I--+-~
o
o 12
'. 16I 20 24
O'IL-_-L____L-__-LL-__L-__- L__~
,0,1 0,2, 0,4 0.6 1,0 1,2
VCE (V). COLLECIOR·EMmER VOLTAGE V.. (V).IIASE-EMITTER VOLTAGE

500 - VCE-12.5V f--- le-101B
~200
. ( Iil - 'OO
r-
j50
8 ,/
20
10 0Jl1
0,1 0.3 0,5 10 20. 50,100 ~,1 G.3 0.5 1. 10 30
I/: (mA). COLLECII)R CURRENT Ie (mA). COLLECIOR CURRENT
CURRENT GAlN-BANDWlDTH PRODUCT

I
:~gg::,~:u~~~CE
- VCE_125Y
,/
- f... 1MHz
....... , ib
.1£.0
..............
//
1
10
0,1 0.3 0.5
, Ie (noM.
510'20
COLLECIOR CUMENT
50 0, 1
0,1 0.3 0.5 3 5 10 3050


HIGH FREQUENCY OSCILLATOR TO-92
• Collector-Base Voltage Vcao=60V
Characteristic Symbol Rating. Unit

Emitter-Base Voltage VeBO 5 V
Collector DiSSipation Pc 400 mW
1. Emitter 2. Base 3. Collecfor
Characteristic Symbol Test Conctitions Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic=100pA,I£=0 60 V

Collector-Emitter Breakdown Voltage . BVceo Ic=10mA, la=O 45 V
Emitter-Base BreakdOwn Voltage BVeBO le=-10pA,lc=0 5 V
Collector Cut-off Current Icao Vca=45V,le=0 0.1 p.A
Emitter Cut-off Current lEBO Vea=3V,lc=O 0.1 p.A
DC Current Gain hFe Vce=1V,lc=50mA 40 400
Base-Emitter On Voltage Vae (on) V ce =10V,lc=10mA 0.6 0.65 0.9 V
Collector-Emitter Saturation Voltage Vce (sat) Ic =150mA, la =15mA 0.15 0.4 V
Base-Emitter Saturation Voltage Vae (sat) Ic=150mA,la=15mA 0.8.3 1.1 V
Current Gain-Bandwidth Product h Vce=lOV,lc=10mA 100 200 MHz
Output Capacitance Cob Vca =10V, Ie =0 4 pF
f=lMHz
hFE CLASSIFICATION
Classification R 0 Y G
hFe 40-80 70-140 120-240 200-400
. ciS SAMSUNG SEMICONDUCTOR 121

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARA(:1'ERlSTIC BASE-EMITTER ON VPLTAGE

100 ,..- 100
90
"... -.. 18 Jaso,J
60
-
·~tJ-
-Vee_1
L-- 30
-, I
~J~
~J~_
I
~_11!1OpAr- II
20
18-)00,.0
10
o
0510 16 20 25
. ~+~
30 35 ..0,4660
r-
0.1
o 0.2 Q.4
Io.e o.e 1D 1.2
V.. (V), COUJ!CIOII.mIITTEtI VOLTAGE V. 00, IIAS&EIIJTTER VOLTAGE
DC CURRENT GAIN CURRENT GAIN-IIANDWIDTH PRODUCT

1000
I----- ¥ _1
i: CE-1OV
I_ /
~r-
I:(
~
i"""-
110
30
l:
10 10
3 5 10 30 110 100 300 600 1000 ,10 30
Ie (noAJ, COI.LIiCIOR_ Ie (mAl, coLi.EClDR CURRENT
BASE-EMITTER SATURATION IIOLTAaE
COLLECIOR-EIIITTER SATURATION VOLTAGE COLLECIOR OUTPUT CAPACITANCE
10 20
~ 1e-101B M~H
IE-O
10 -
1 ...... -
VIE (III)
....... f-..,.
V
1 L
VCE(III) I
I I
Q01
3 5 10 30 60
Ie (IlIA), COLIJ!CIOR CURRENT
100 300
1 1
1 3 5
I 10
Veo (V), COLLEC:IOIWIAIIE VOLTAGE
30 60 100 300

FM RADIO RF AMp, MIX, CONY, OSc, IF AMP

10-92
• High Current Gain Bandwidth Product fT =250MHz (1\tp)

Collector-Emitter Voltage VCEO 30' V
Emitter-Base Voltage Veso 4 V
Collector Current ' Ic 30 mA
1 Emitter 2. Base 3.- Collector
Collector-Base Breakdowl) Voltage BVcso Ic =1oopA, Ie =0 35 V

Collector-Emitter Breakdown Voltage BVceo Ic =5mA, Is;"O 30 V
Emitter-Base Breakdown Voltage BVeso ' Ie =-10pA, Ic =0 4 V
Collector Cut-off Current leBO Vcs=30V,le=0 0.1 p.A
Emitter Cut-off Current , leso Ves=4V,lc=0 . 0.1 p.A
Base'Emitter On Voltage Vse(on) Vee =fN, Ic =1mA 0.65 0.70 0.75 V
Collector-Emitter Saturation Voltage Vce (sat) Ie =10mA, Is =1mA 0.1 0.4 V
Current Gain-Bandwidth Product h Vce=10V, le=1mA 100 250 MHz
Output Capacitance I Cob Vcs=10V,le=0 2.0 3.2 pF
f=1MHz
hFE CLASSIFICATION
hFe 40-80 70-140 120-240
c8 SAMSUNG SEMICONQUCTOR 12,3

I I
1'0.90.,.
, __
Io-BOpA
+-_ 28 -vL..
-I-
111-10.,.
I
lo-l~
I
10_50.,._
.
I .
loo4OpA-
~.
I
10-30.,.-
I
I Io°ar-
._. -
o
o 1 7
1o=1j"'_
9 10
.p
o 0.4
1I
o.e o.e 1.0 1.2
Vc:. (y), COLLEcro.....mER VOLTAGE va. (VI, BASE-EMITTER IIOLTAOE
. DC CURRENT GAIN . CURRE~T GAIN-BANDWIDTH PRODUCT
1000 1000
Vee_lOY
- ~ =1 ;~
/".,.
i"'""
/
_f-
30
10 10
0.1 CI3 Q5 1 3 5 10 30 50 100 Q5 10 30
Ie (mA), COLLECrOR CURRENT Ie (mAl, COLLECIOR CURRENT
10
6
- 1e-101o _~_1JHz
IE-O
I:
(III
~ .................
vae(
V ;3 2
............ .......
Q.01
0.1 CI3 Q5. 1 3 5 10 30 10 30 50 100
Ie (IlIA), COLLECIOII CURRENT Vea (VI, COLLECIOII-8ASE IIOLTAOE
c8 SAMSUNG.SEMICONDUcrOR 124
. KSC839 NPN EPITAXIAL SILICON TRANSISTOR
FM/AM RADIO RF AMp, CONY, OSC, IF AMP

TO-92
• Current-Gain-Bandwidth Product h =200MHz

Collector-Base Voltage Vcao 35 V

Emitter-Base Voltage VEao 4 V
•
Collector-Base Breakdown Voltage BVcao Ic = 100,..A, IE =0 35 V

Collector-Emitter Breakdown Voltage BVcEo Ic=5mA,la=0 30 V
Emitter-Base Breakdown Voltage BVEao IE =10,..A, Ic =0 4 V
Collector Cut-off C!,!rrent ICBO VcB =30V,IE=0 0.1 p.A
Emitter Cut-off Current lEBO VEa =4V, Ic =0 0.1 p.A
DC Current Gain .hFE VCE = 12V, Ic=2mA 40 400
Base-Emitter On Voltage Vadon) VCE=f5\J,lc=1mA 0.65 0.70 0.75 V
Collector-Emitter Saturation Voltage Vcdsat) Ic=10mA,la=1mA 0.1 0.4 V
Current Gain-Bandwidth Product iT VcE =10V, Ic=1mA 80 200 MHz
Output Capacitance Cob Vca =10V,IE=0 2.0 3.5 pF
f=1MHz •
hFE CLASSIFICATION
Classification R 0 y. G
hFE 40-80 70-140 120-240 200-400

,NPN 'EPrTAXIAL SILICON TRANSISToR
STATIC CltAFIACI'ERISTIC DC CURRENT GAIN

10 1000
B_~_
_1211
I
l8-eo,.A-
600
I 300
-
.lB-7OI<A_
, , I
IB-eO.A_
I
I
B-SOoA_
I 100
IB_40."- g
, I
IB-3OoA~ 1 50
I
18-2O,oA_
30
I
1
Bt
o 10
o 1 3 4 7 8 9 10 05 10 30
Veo (VI, CXIU.ECIOR-EIIITTEA VOLTAGE I(: (mA), COI.LECIOR CURRENT

CURRENT GAIN-BANDWIDTH PRODUCT COLLl'CTOR-EMITTER SATURATION VOLTAGE
1000
:',1
Vce-10\1' - Jc_101B
I
I--
..... = F= vL ...
V
V
1::::= i= Vee(...)
10 0.D1
10 30 0.1 0.3 05 l' 3,5, 10 30
Ie (mA), COLLECIOA CURRENT Ie (mA), COUECIOR CUARENT
~J-1JHZ
, IE-~
--
....... ,....... I
t- i,
r i'..
1 I
I I
I "
10 20 30 50 100
VC8(V),~YOLTAGE


.. Complement to KSA545 r0-92
• High Coliector·Base Voltage Vcao=7O\(

Collector-Emitter Voltage Vcm 60 V
Collector Current Ie 200 mA
Collector Dissipation Pc 400 rWN
•
1. Emitter 2. Base 3. Colleclor
Collector-Base Breakdown Voltage BVcBO Ic=100pA,le=0 70 V

Collector-Emitter Breakdown Voltage BVceo Ic=10mA, Is=O 60 V
Emitter-Base Breakdown Voltage BVeBO le=-10pA,lc =0 5 V
Collector Cut-off Current IcBO Vcs =45V, Ie =0 0.1 pA
Emitter Cut-off Current leso Ves=:rv,lc=O . 0.1 pA
DC Current Gain hFE Vce=1V,lc=50mA 40 400
Base-Emitter On Voltage Vse(on) Vce=1OV,lc=10mA 0.60 0.90 V
Collector-Emitter Saturation Voltage Vce (sat) Ic =1S0mA,ls =15mA. 0.15 0.4 V
Base-Emitter Saturation Voltage Vse (sat) Ic=150mA,ls=15mA 0.83 1.1 V
hFE CLASSIFICATION
hFE 40-80 70-140 120-240 200-400

KSC853.' .NPN EPITAXIAL .SILICON TRANSiStoR.
STATIC CHARACTERISTIC BASE-EIIITTER ON VOLTAGE
,--l.IV
80
-
100
_-
90
~10-55O,.A
1
~ ,
IB-5OO,.A
"... k- _ 10.450""
~
--
~r--r: _10-400""
l - I--r- ~-~-I-
~l - I - - I--
10.soo,.A I -
1
,- ,
~~ 10-ro"",-
_10.200""
~
~10-100,.A
1-
II"" I
20 10-
17'" i
o~
0
°iOO,.A o l/
0510152025 30 35 40 4550 o IIA lIS 08 1.0 1.2
-tv). ....... I iER\U.TAGE
BASE-EIIITTERSATURATION VOLTAGE
DU CURRENT GAIN COLLECTOIMIIITTER SATURAnON VOLTAGE
ie _ _
r----
.... I-f-V
I t-
I I (
I
8
;
l- f
--
P
f 10 0
./
VCE(IIII
5
, ,
-.LlW , ,
, I J [1'1
I' ,.
I'i_
U1'1:'
'. 3 5 10 30 50 100 300 500 .10G0 300
Ie (lIlA), COUECIOII CURAEIfI'
12 1
I- t,JHi
le_O .
10
1
r"::
r-.... ,
l' !
I-~
--
,
i...........
'.1
r--. ,
2
I' 1
!I
0, i" '
i'i'
3 5 10 30 50 100 200

KSC900 NPN EPITAXIAL'SILICON TRANSISTOR,
LOW FREQUENCY, LOW NOISE AMPLIFIER

• Collector-Base Voltage,ycao=3OV TO·92
• Low Noise Level NL=50mV (Max)
Collector·Base Voltage Vcoo 30 V

Collector·Emitter Voltage VCEO 25 V
Emitter·Base Voltage VEOO 5 V
Collector Current Ic 50 rnA
Collector Dissipation Pi: 250 rrMI
Junction Temperature Tj 150 OC
I
1 Emitter 2. Base 3. Collector
Characteristic Symbol Test, Conditions Min ~p Max Unit
Collector·Base Breakdown Voltage BVcoo Ic=l00"A,IE=O 30 V

Collector·Emitter Breakdown Voltage BVcEO Ic=10mA, Is=O 25 V
Emitter·Base Breakdown Voltage BVEoo IE=10"A,lc=0 5 V
Collector Cut-off Current Icoo Vcs =25V, IE=O 50 nA
Emitter Cut-off Current IEetJ VES =311, Ic =0 100 nA
DC Current Gain hFE VCE=3V,lc=O,5mA 120 1000
Collector·Emitter Saturation Voltage Vee (sat) Ic =20mA, Is =2mA 0.1 Q.2 V,
Base-Emitter On Voltage VBe (on) Vce=sv,lc=O.5mA 0.62 0.7 V
Current Gain·Bandwidth Product IT Vce =3II,lc .. lmA 100 MHz
Noise Level NL Vcc=l2v, Ic=O.lmA' 30 50 rrftI
Rs=25KIl
Av=8OdB, (f=lKHz)
hFE CLASSIFICATION'
Classification y G L' Y
hFE 120·240 200-400 350-700 6O()'1000
129
KSC9()O NP.N EPITAXIAL SILICON TRANSISTOR
~--~----~--------------~--------------
STATIC CHARACI'ERISTIC BASE-EMmER oN VOLTAGE
10
rLJ- r--
--- I-- I-- roo-
!-- ~
L.,.l- r--
I I
I~·'r -
-
10
==
oo.i ~
II
..
-:--ro.A
li.a,A
••&,oA-
I
I ,
1s."oA_ 0.3
I
[
Is.j_
D 0.1
024 8101214161820 o 0.2 G.4 o.a o.a 1.0 1.2

500 1000
460
c •
r-- VCfi_W
400 f""'o,
/' IY
1 350
1= -
8200
t-
1 ,50
100
5Of--++H-H1I11-+ttttltlt--+-t-tH-tIII--+tt+ttfI
OL-~~~~~lli-~~m-~~WJ
0.D1 Q03G.06 0.1 0.3 o.a 1 3 5 10 30 50100 0.1 0.3 o.s 1 3 5 10 30 50 100
1e(mA). COLLECIlIRCU_T Ie (mA). COUEC:lOR CURRENT
BASE·EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATIO", VOLTAGE COLLECTOR OUTPUT CAPACITANCE
I
r--J•,JH
I~. 3 IE.O
I ,
.......
:::I
5 I·
£ i 3
,
I
~ 0.1 vo,
v S h..
, ......,
0.D1 o
0.1 0.3 o.a 1 3510 3050100 10 30 50 100
Ie (lIIA). COUECIOR CURRENT
c8 SAMSUNG SEMICONDUcroFl 130

KSC900· NPN EPITAXIAL SILICON TRANSISTOR
'00
t=
. 50 F ~~v
' .. 10Hz
30
I~
r~~ &
I> 1\.1\
l-
f""-.,..
,I""--. --- J.
........
......t'
.1 LO-D,-LO..l.D3..1.0-'-.OS"""'0"'-.'-L-0-'-.3-'-0.L.sU-W"---'-'':'"3"":-5~'O
0. ,
am 0.03 (l()5 '0.1 0.3 0.5 3 5 10
Ie (mA), COLLECTOR CURRENT ie (rnA), COLLECfOR CURRENT
NOISE FIGURE
'00
50 -jVCE _5V
30 'f 1Hz
~ ~~
&1'\ rfJ&~~~
0"'-
5
3
........
,I'-
~..
II: 0.5
.3
.1
"1-
001 003 005 0.1 03 0.5 3 5 10
Ie (mA) COLLECTOR CURRENT
. .
131
'."
NPN EPITAXIAL SILICON TRANSISTOR'
FM CONVERTER, OSCilLATOR
HIGH FREQUENCY AMPLIFIER TO-92
• High Current Gain Bandwidth Product fT =250MHz (lYp)
ABSOLUTE MAXIMUM RATINGS (Ta,=25°C)
Characteristic Symbol ' Rating Unit
Collector-Base Voltage ' VCBO 35 V

Emitter-Base Voltage VEeo 4 V
,ELECTRICAL CHARACTERISTICS (T.=25°C)
Characteristic Symbol Test Conditions Min ~p Max Unit
, COllector-Base Breakdown Voltage BVceo Ic=100pA,IE=0 35 V

Collector-Emitter Breakdown Voltage BVCEO Ic=10mA, le=O 30 V
Emitter-Base Breakdown Voltage BVEeo IE = -10pA, Ic =0 4 V'
Collector Cut-off Current Iceo Vce =20V, IE =0 ,0.1 pA
Emitter Cut-off Current lEBO VEe =3V, Ic =0 0.1 pA
Current Gain-Bandwidth'Product f~ VCE =10V, Ic =1mA 100 250 MHz
Output Capacitance Cob Vce =10V, IE =0
2.0 3.5 pF
f=1MHz '
DC Current Gain hFE VCE =1OV, Ic =2mA 40 240
Collector-Emitter Saturation Voltage VCE (sat) Ic =10mA, Ie =1mA 0.6 V
Collector-Base Time Constant Cc'rbb' Vce=10V,IE=-1mA
50 75' ps
f=31.9MHz
hFE CLASSIFICATION
hFE 40-80 70-140 120-240


10 . 2
I
I!··,ocr 28
VCE-W
I•• ~
1-
I••ao,.t.
I•• ~-
I
1•• 60",- ~
I
la_50,.1\
I ~-- --
10·
- - - I----- I
I•• ~
! I.~ -- J
-
, 1II·,or 'I
10 0.2 0.4 o.e o.e 1D 1.2
Ie (mAl, COLLECIOR CURRENT Vae M,USE-EMITTER VOLTAGE
•
DC CURRENT GAIN CURRENT GAIN·BANDWIDTH PRODUCT
1000 1000
500 VCE_1OV
Jd."OV
300
,-r-
~ -I- i-'
10 10
0.5 10 30 0..5 10. 30
Ie (mA). COLLEctOR CURRENT Ie (rnA), COLLECTOR CURRENT
10 -
I
I
- 1c_1dl,
r-- --1=1MHz 1
I IE_(
I
i
'~ ~ -tae sat !
I" I' I J
/ No- I
E= E VeE satJ 1 I---.
I r--.
~i=
I
I !I i
.
CD1 1
I
0.1 0.30..5 35 10 30 10 30 50 100
Ie (mAl, COLLECTOR CURRENT Ve. M, CQl.LECI'OR-BASE VOLTAGE
C8 SAMSUNG SEMICONDUCTOR
133.
KSC945/ 'NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY OSC. . TO-92
• High Current Gain Bandwidth Product fr =300MHz (Typ)
. ABSOLUTE MAXIMUM RATINGS (Ta 25°C) =

Collector-Base Voltage VeBO 60 V

Collector-Emitter Voltage VeEO 50 V'

Collector-Base Breakdown Voltage BVcBo Ic =100pA, IE =0 . 60 V

Coliector:Emitter Breakdown Voltage BVcEo Ic =10mA, IB =0 50 ,V
Emitter-Base Breakdown Voltage BVEBo IE=-10pA,lc =0 5 V
Collector Cut-off Current ICBO Vce =40V,IE=0 0.1 pA
Emitter Cut-off Current lEBO VEB =3V, Ic =0 0.1 pA
DC Current Gain hFE VCE=6V,lc=1.0mA 70 700
Collector-Emitter SaturatioF;l Voltage VCE (sat) Ic=100mA,IB=10mA 0.15 0.3 V
Current-Gain-Bandwidth Product IT V CE=6V, Ic=10mA 300 MHz
Vce =6V,IE=0
Output Capacitance Cob 2.5 pF
f",1MHz
Noise Figure VcE =6V,IE=-O.5mA
NF 4.0 dB
f=1KHz, Rs =5000
hFE CLASSIFICATION
hFE 70-140 120-240 200-400 350-700
c8 SAMSUNG SEMICONDUCTOR 1.34

STATIC CHARACTERISTIC TRANSFER CHARACTERISTIC

100 100
./
.la-4OO,oA
" l
Ie _ _ r- r- VeE - 8V ,
110 -- 30
/.V I
I.~ i-"""
- lo-aoo,.A
- la_l!5OjoA 1- I
rlv i._~
V~
.·I.-l~ t--
r/~ I I
la-l00,.A t--
:,-
.20 t-- - -i- IB_5OpA
t--
! 0.1
• 8. 12 18 20 0.2 0.4 o.e o.e 1.0 1.2
Vcr CV), COlLECJOll.EMn'TER IIOLTAIIE Vie (V),lIA8E-E111mER IIOLT_
DC CURRENT GAIN CURREt<lT GAIN BANDWIDTH PRODUCT
t-- f-VeE_8V §
..i
t--- VCE-fN I
~'000
I~
,i
~
100
30
V
8 '00 i'""'- to
J
i 10
i!
30 I
~
3
10 1
10 30 100 ~ 0.1 D.3 30 100
Ie (mA), COLLECI'OR CURRENT Ie (mA), COLLECIOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE
t-- Ic-1018
~ VIE (sal)
,--- VeE (sal)
10 I! III
30 100 300 10 30 50 100 300 1000 .
Ie (mA). COLLECfOR CURRENT Vea (V). COLLECIOR-BASE VOLTAGE


MEDIUM SPEED SWITCHING TO-92
• I:llgh COllector-Base Voltage Vcao=8OV
• Collector Current Ie =700mA
• Collector DIIISI.patlon Pc =800mW

,

Collector Dissipation Pc 800 rrm
Collector-Base Breakdown Voltage BVcBO Ic =100,..A, IE =0 80 V

Collector-Emitter Breakdown Voltage BVcEo Ic =10mA, Ie =0 60 V
Emitter-Base Breakdown Voltage . BVEBO IE = -10,..A, Ic =0 8 I V
Collector Cut-off Current Iceo Vce=6OV,IE=O 0.1 ,..A
Emitter Cut-off Current lEBO VEe =5V, Ic =0 0.1' ,..A
DC Current Gain hFE VCE='ZII,lc=50mA 40 400 .
Collector-Emitter Saturation Voltage VCE (sat) Ic=500mA,le=50mA 0.2 0.4. V
Base-Emitter Saturation Voltage Ve~ (sat) Ic=500mA,le=50mA 0.86 1.1 V
Current Gain-Bandwidth Product IT VCE =lOV, Ic =50mA 30 50 MHz
Output Capacitance Cob' Vce =10V,IE=0
8 pF
f=lMHz
hFE CLASSIFICATION
hFE 40-80 70-140 120-240 200-400
ciS· SAMSUNG SEMICONDUCTOR 136

t
STATIC CHARACTERISTIC BASE.EMITTER ON VOLTAGE
200
180
---
L.--
~ 'O=TA,l
lo-l.6mA ---
,
I
,.-UmA--
• _ • 4 •
'I
le,,'.2mA
-_.
18_1'0.."
t·- t---
le-0.8mA
IB~r:
t--
t----
I
'10
-"-Oti- 5 _.
i,o-r"1~
20 -- --'--+--+--i'--i-c/-+-+---'-+-----j
I
1~~~--'- __~~~__~~~~
0'51015202530 35 40 4550 o 0.2 0.4 0.6 OB 1.0 1.2
Veo M. COLLECTOR-EMITTER WlLTAGE v .. (V). BASE·EMmER VOLTAGE

10
2'10 ,
-j±~
,
ill, 1111
. 200
i !I 11:1 t-- 1c= 01
I! ill"
n·... •
1 .......
V~E(sat)
-I-- I·~~
....,..,. , .
,
, I , i iHn1
, I iI i ! I,:
'10
I I! I,: vC.(sat'
i
--- '-I I :
iI !ii
'11 I! : Ii!:
3 5 10 30 50 100 300 500 1000 3 5 . 10 30 50 100 300 500 1000
Ie (mA). COLLECTOR CURRENT Ie (mol). COLLECTOR CURRENT
100 -
50 1---~-IMH
le-O
o
~.I'
f-.
-
,
3
t--
III I
1 i
10 30 50 100
Yea (V), COLLECTOR-BASE VOLTAGE

HIGH VOLTAGE AMPLIFIER,

• High Collector-Base Voltage VcBo =160V TO-92
• Collector Current Ic =700mA
• Collector DiSsipation Pc =800mW
Collector-Base Voltage Veso 160 V

Collector-Emitter Voltage VeEo 140 V
Emitter-Base Voltage VESO 8 V
Collector Current
Collector Dissipation
Ie
Pc . 700
800
mA
mW
Storage lemperature' Tstg -55-150 °C
1, Emitter 2, Base 3. Colleclor
Charactaristic Symbol Test Conditions Min lYP . Max Unit
Collector-Base Breakdown Voltage BVeso le=100pA. IE =0 160 V

Collector-Emitter Breakdown Voltage BVeEo le=10mA, Is=O 140 V
Emitter-Base Breakdown Voltage -BVEBO Ie = -10pA, Ie =0 8 V
Collector Cut-off Current (Continuous) leBO Ves=60V,IE=0 0.1 pA
Emitter Cut-off Current IEso Ves i'5V,le =0 0.1 pA
DC Current Gain hFE VeE ='2V,le =50mA 40 240
Collector-Emitter Saturation Voltage VeE (sat) Ie =200mA, Is =20mA 0.2 0.7 V
Base-Emitter Saturation Voltage VSE (sat) Ie =200mA, Is =20mA 0.86 1.0 V
Current Gain-Bandwidth Product fr VeE ",10V,l e =50mA 30 50 MHz
Output Capacitance Cob Vcs=10V,IE=0
8 pF
f=IMHz
hFE CLASSIFICATION
Classification R 0 V G
hFE 40-80 70-140 120-240 200-400
138
STATIC CHARACTERISTIC BASE.EMITTER ON VOLTAGE

100
I'/v V1.'0.B~A
1000
r
90
BO
1/1;:V ,."."". la=D.S,mA 500
300
- Vee,.
...
i VI//
I
J!J
I
Is .. o.4m A_
r--- ffi
:> 1100
u BO /"l- il
~ V/ 50
~ 50
~ V ~ 30
i
i.
40
30 1 '0
I
.I! V la .. o.2mA
.I!
20
10
10 0.2 0.4 0.6 DB lD 1.2

VeE (V), BA$E·EMITTEA VOLTAGE
DC CURRENT GAIN
1000 10
500
300
I-- Vce .. 5 ..~ 3
. r--- 1-'e=lOl
g
0 "\ ~ , VSE(SaI)
!;;
a:
:> D.5
~~ 0.3
~
I Ve.(sat)"
V
~ 0.1
>
IOD5
10.03
>,
1 I I
0.01
I
3 5 10 30 50 100 300500 1000 3 5 10 30 50 100 300 500 1000

Ie (mAl, COLLECTOR CURRENT Ie (mA), COLLECTOR CURRENT
2
~!
=ntz le .. O
10
'\.
l'...
r-....
2
!
10 30 50 100
Vee (V), COLLECTOR-SASE VOLTAGE

KSC1070(1)/1070 (2) NPN EPITAXIAL SILICON TAANSISI"OR
UHF TV TUNER RF AMPLIFIERLIFIER, MIXER

DISK TR
DISK MOLD
HIGH PG, LOW NF (PG: 18dB, NF: 2.8dB, @900MHz)
CoIlector·Base Voltage Vcao 30. V

Collector·Emitter Voltage Vceo 25 V
Emitter·Base Voltage Veeo 3.0. V.
Collector Current Ic 20. . mA
Collector Dissipation Pc 20.0. mW
Junction Temperature Tj 150. ·C
Storage Temperature Tstg -55-150. ·C
1 Emitter 2 Base 3. Collector
Characteristic Symbol Test ·Condltlon Min Typ Max Unit
CoI~tor Cutoff Current ICBO Vcs=25V, le=G 0..1 IlA

DC Current Gain hFE VCE=lo.V,lc=3mA 40. So. 20.0.
Current Gain·Bandwidth Product it Vce=lo.V, le=-3mA 750. 10.0.0. MHz
Output CapaCitance Cob f=lMHz, Vcs=lDV, le=Q 0..55 o..S pF
Noise Figure NF Vcs=lo.V,le'O'-3mA 2.S 4.0. dB
f=9o.DMHz
Power Gain PG Vcs=lDV,IE:=-3mA 14 . 1S dB
f=9DDMHz
AGC Current: Only to Cl 0.70. (1) IAGe IE of PG -3GdB -S -11 mA
f=9DOMHz
KSC1D7D (1): IAGe Classification P: -9"'-11mA

Q: -S"'-lDmA
KSC1D7D (2): HFE Classification F: 40.",20.0.
c8 SAMSUNG SEMICONDUCTOR 140.

KSC1070 (1)/1070 (2) NPN EPrrAXIAL SILICON TRANSISTOR
le-VCE CHARACTERISTIC h....lc CHARACTERISTIC

20 1000 V
co
18 500
16
..
I-
Z
II:
200
!lu ~ 100
II:
e i
l-
0
~
5
0
g
~
j i 0
5
2
1
01 02 0.5 10 20 50 100
Vce(V), COLLECTOMMITTER VOLTAGE Ic(mA~ COLLECTOR CURRENT
I
VCE (sal)-le CHARACTERISTIC V.. (sal)-le CHARACTERISTIC
10000 10000
le""'1 O'le Ie 10'le
5000 5000
!!J
:!2000
I ~2000
6 II O·
i i
> 1000 >1000
500 0
50
OJ 200 OJ 200
::_E
100 ~- 100
! 50 ! 0
oJ oJ
20 0
10 1 0
01 0.2 0.5 10 20 50 100 0.1 0.2 0.5 10 20 50 100
IclmAlo COLLECTOR CURRENT Ie (rnA), COLLECTOR CURRENT
"":1. CHARACTERISTIC Cob-Vea CHARACTI!'RISTIC
V E=1 V
10000,_,,_
gsooo
f2000'r--+-++++H+r--+-t++rH+r--+-r++tH~
i!'
1
o_,,_
'000
1;I 500S
• • • •
~ 200r--+-r++tHtr--t-rr+H~---+-rrrH+H
105i• • • •
§ 0.2r--+-r++~tr--+-I++HfWr-'--+-r++ttt~
i8 lO
l 50
~ 20r--+-r++~tr--t-rr+H+H---+-rrrH+H
f Ol
005~
• • •
0.021--+-++tttt+t---t-H-tHl-t"Hl--+-+ttttttl
~OL.'---0~.~2~~0.~5~-~1---~2~~-~5~_~'~0---2~0~~-~50~-~'00
IElmA). EMITTER CURRENT Vca(~ COLLECTOR-BASE VOLTAGE

K$C1Q~O . (1)/1070 .(2)· NPH EPITAXIAL .SILICON TRANS1STOR
Po-To CHARACTERISTIC IS".I - f CHRACTERISTIC

,. .5 0
300
T,
3.0
vcr't
I'\. ,.LU
------
2.0
l\.
T.
['..
~ 1.0 ~
I\.
"' r-.... ~....
I."".,
05
.:h
7mA
0
I"
"' '\ 0.3
0.2
......
~ o. 1
"
100 200 300 500 1000
o 25 50 75 100 125 f(MHz), FREQUENCY
ToI'C~ AMBIENT TEMPERATURE S". - f CHRACTERISTIC

L s",. - f CHRACTERISTIC 005
t-- Vcs=10V
003
~IP'
.002
~
J
0.0
0005
,
7mA~
.,...........~
- / ./
.L. .L
"
0.003 L
~mAL
000
l/--r
'DO 200 300 500 '000
f(MHz), FREQUENCY
f(MHz). FREQUENCY
,
S,,-I, Sorf
L S". - I CHRACTERlSTIC
120
--
• Vcs=1OV ' -5mA
.,
t.r---
100 jA
• 80
/ ,,--7mA
t'"
~
~
<ii
i
60
40
0
'DO 200 300 500 ·1000
f(MHz) FREQUENCY

KSC1070 (1)/1070 (2) NPN EPITAXIAL SILICON TRANSISTOR
yib-f CHRACTERISTIC yrb-f CHRACTERISTIC

a 0
'- y,~=gml""" ,60MHJr::

1 -'" ,t-
-2 a ~1-JmA - - - c--,!=JmA VeB -10V
-0_ 2
I I
V
100MHz
3001Hz1
900MHz 700MHz '
.1
~ -40 ff~
-
'500MHz
~~OOMH~--
SOOMHz
+~
,",:T ~OOMHZ- 10dMHZ
~
fb -0. 4
500MHzl
I ' L
1--1- 5~'r.--.. 5~M~Z "11)
Leo
iil ~
I-
.... 1/ ~ 700JHZ
f 900MH¥'
~ V
I-eo I"
-0 e
7m AJ:< V
-5mA::" IE=-3mA t--
-'00 -0_ 8 -
}'lb-gb .... jblb
vcr'iv
20 40 60 80 '00 '20
-'a
r-t oe - - 0_6 D-4 02
glll(mII), CONDUCTANCE grb(mS), CONDUCTANCE
ytb-f CHRACTERISTIC yob-f CHRACTERISTIC

5
yIb=gtb+jbtb
Vca-10V- C-
Yob~9""~JI>ob
Vcs'"" 1DV r -
'0o
I 4
~~ 300MHz
\ ..... .....
II
E=- rnA
A
5~~"
'OOMHz....... -5mA
1"-0.. 3 - mA
'OOMHZ ~~900MHZ
!-300MH~ ~-
1
I· y ~7mA~
~OOMlz
-~ V/
7QOMHz
I
I 40
V'[= 3mA
300MHZ\~'OMHz
\~
2
~
5_
1MHZ
fl,jM+ ISOOMHZ '"' .

900MHz , I#- J.OOMHZ
20
I
(}
H---
100 -80 eo - 20
700~HZ
900MHz
20
~ "
i:=' 100jHz
40
'_0 2_0
gtb(mII), CONDUCTANCE
gob(mS~ COND_UCTANCE
Gpb-IE, NF-I. CHRACTERISTIC 900 MHz PG, NF TEST CIRCUIT
a
Vcc=10V
l.- I".. J
f=900MHz
5
0
(.. --
N
5
1/\ 470PFI~
a \. .) r'\
r-- i"""
\
NF
1000pF ~
-VEE
5
\
-, a
a -, 5
:\ L: 25x5xO.5 mm
-2 -4 -6 -8 -10 -12
le(mA~ EMITTER CURRENT


TO-92


C.ollector-Emitter Voltage VCEO 45 V
Emitter-Ba$e Voltage VeBO 5 V
Collector Dissipation Pc 800 mW~
Junction Temperature Tj 150 " °C
Collector-Base Breakdown Voltage BVCBO .Ic =1oopA, Ie =0 60 V

Collector-Emitter Breakdown Voltage BVceo Ic=10mA, 18=0 45 V
Emitter-Base Breakdown Voltage BVeBO Ie = -100pA, Ic =0 5 V
Collector Cut-off Current ICBO Vca=4OV,le=O 0.1 pA
Emitter Cut-off Current leBO Ve8 =3II,lc=0 0.1 pA
DC Current Gain hFe Vce='ZII, Ic~50mA 40 240
Collector-Emitter Saturation Voltage Vce (sat) Ic =0.5A, 18 =50mA 0.24 0.4 'V
Base-Emitter Saturation Voltage V8e (sat) Ic =0.5A,18=50mA 0.7 0.89 1.1 'V
Output Capacitance Cob Vc8 =1OV,le=O
12 pF
f=1MHz
hFE CLASSIFICATION
hFE 40-80 70-140 120-240
144
c8SAMSUNG SEMICONDUCTOR
STAnc CHARACTERISTIC ElASE-EMmER ON VOLTAGE
IB_1.8mA 1000
--- -
./ I
i
..,., r-
'" ..-
./ 1B_1.8mA
lle_1L
500
300
- -vco_w
If'" ~ I ,
1
--- ---'''-r
ie_UlnA
360 If'" ~ I
I I
1e-1.0lnA
~ I
1= r-
~15O
-:-- ~
IB!Q8mA
I
I
li
100
50
+-+- r-'
IB-o.jmA r -
5101520 25 30 36 40 4550 G.2 0.4 Q.6 1.0 1.2
, V"" (V). c:oLLECJ'OR.EIImER lIOLT_ _ (V), MSE-EMITTEA 1IOLTAOE

DC CURRENT GAIN COLLECfOR..EMITTER SATURATION VOLTAGE
10
- VeE_ I-- Ic_101B
VBE(
~
00
ee(
50
30
10
3 5 10 30 50 100 300 500 1000 3 5 10 30 50 100 300 500
Ie (mA~ coLLECI'IiR CUARENT Ie (mA), COLLEc:roR CURRENT
CoLLECTOR OUTPUT CAPACITANCE
f.1MH
~ IE_O
~1oo
j!!
~ 50
~ 30
i '""-
8 10
1 I
3 5 10 30 50 100
Veo (V). COLLECIOA._1IOf,1lU3E

TV 1ST, 2ND PICTURE IF AMPLIFIER

(FORWARD. AGC) TO-92
• High Current Gain Bandwidth· Product fT =700MHz

• High Power Gain Gpe=24dB flYp) at 45MHz
.ABSOLUTE MAXIMUM RATINGS (Til =25°C)
Characteristic Symbol , Rating Unit

Collector-Emitter Voltage Vceo ·20 V
Emitter-Base VoHage Veeo 4 V
Junction ~emperature Tj 150 OC
1. Emitter 2. Base 3 .. Colleclor
ELECTRI~L CHARACTERISTICS (Ta =25°C)
Collector-Base Breakdown Voltage BVcao le=10pA,le=0 30 V

Collector-Emitter Breakdown Voltage BVcEO Ic=5mA, Is=O 20 V
Emitter-Base Breakdown Voltage BVeeo le=-10pA,lc=0 4 V
Collector Cut-off Current Iceo Vcs=2OV,le=0 0.1 pA
DC Current Gain hFE . Vce=lOV,lc=2mA 40 240
Current Gain-Bandwidth Product h Vce =10V, Ic:"3mA 400 700 MHz
Reverse Transfer Capacitance Cre Vcs=lOV,le=O
0.6 pF
f=lMHz
Power Gain Gpe Vce=lOV,le=-3mA
20 24 dB
f=45MHz
AGCVoltage VNlC G p E=-3OdB
4.4 5.2 6.0 V
f=45MHz
ClassHlcation R 0 y
hFE 40-80 70-140 120-240

KSC1187 NPN ,EPITAXIAL SILICON TRANSISTOR
STAnc CHARACTERISTIC DC CURRENT GAIN

ro ~
I..,k. . 500
300
f-- VCE_10V'
~ ..... '. ·:':'80....

~% V
-
....... ~
,s";1D,.A 100
1•• 80....-r--
~ %: 8::: ~
~ ~ ~ ~-
I
1••so,.A,_
I,••.00....
I _ I:
~ -:- I..J. . _ Ii
'! 10
1\
I"
i"""
I..J. . _
4 8
I··'r- 10
1
0.1 0.3 o.s 3 5 10 .30 50 100
V.. (V), COLLECIOfI.EMlnER VOLTAQE Ie (mAl, COLLECIOR CURRENT
CURRENT GAIN-BANDWIDTH PRODUCT COLLECTDR-EMITTER SATURATION VOLTAGE
I
10
J.W - IC-lOla
BE sat)
./
/
/ /
VCE!~
100 om
0.1 Q.3 10 30 0.G1 0.03 QD5 0.1 0.3 o.s 1 10'
Ie (mA), COLLECTOR CURRENT Ie (mA), COLLECTOR CURRENT
REVERSE CAPACITANCE
fLU
IE-1)
-I--
r--.. '
0.1
3 5 10 30 50 100 300
Vea (V), COLLa:TOIWWIE VOLTAGE

TV PIF AMPLIFIER
• High Current Gain Bandwidth Product f1 =700MHz TO-92
• High Power Gain Gpe=25dB at 45MHz (Min)
ABSOLUTE MAXIMUM RATINGS (Ta =25.oC)

Collector-Emitter Voltage VCEo 20 V
Emitter,Base Voltage VESO 4 V
Storage Temperature Tstg '-55-150 °C',

. Characteristic Symbol Test Conditions Min lYP Max Unit
Collector-Base Breakdown Voltage BVcso Ic =10pA, IE =0 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=5mA,ls=0. 20 V
Emitter-Base Breakdown Voltage BVEso IE = -10pA, Ic =.0 4 V
Collector Cut-off Current Icso' Vcs =2OV, IE =0 0.1 pA
EmitterCut-off Current IEso VEs =3V,lc =O 0.1 pA
DC Current Gain hFE VcE =10V,lc=2mA 40 240
Current Gain-Bandwidth Product h VCE =10, Ic =3mA 400 700 MHz
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,ls=1mA 0.2 0.7 V
Output Capacitance Cob Vcs=10V,IE=0 1 pF
f=lMHz
Power Gain Gpe Ic=10mA, VCE=6V 20 24 dB
f=45MHz, Rs=500
hFE CLASSIFICATION
Clas!lification R 0 y
hFE 40-80 70-140 120-240

KSC1188 .NPN EPITAXIAL SILICON TRANSISTOR

10 ,
9 le=90"A
10
B
1.~BOpA = P'CE~1OV .
-- . - --
IB=70pA
IEw
a:
a:
le ...eOpA 11a:
~
IB_50pA
4 1.~4OpA
3 1.-30pA . !
JI
OS
2 1•• 20pA 0.3
1 1•• 10pA -
o 2 10 12 14 '16 18 20
0.1
o
J
0.2 0.4 0.8
1
U.tl· 1.0 1.2
VCE (V), COLLECTOR-EMITTER VOLTAGE \lao M. BASE-EMITTER VOLTAGE

1000 2000
500
300
VCE=1OV
. JJ1·
Ll.
/
It"
"
1\
10 100
os 10 30 0.1 D.3 0.5 3 5 10 30
1e (mA). COLl.EClOR CURRENT Ie (mA). COUEClOR CURRENT

0
1.7 II
t-- +--if~'M~z'
51------ 10=101B
3 •• o
J 1S
1
1 I
VBE(sat)
./ 1t:-----
1 Vee("')
-- ,....
3 o.7
OD1 0.5
0.1 M ~ 1 3 5 ro 30 3510 3050 100
Ie (mA). COLl.EClOR CURRENT Vea M. COLLECIOII'BASE VOLTAGE

K~222" NPN,EPITAXIAL SILICON TRANSISTOR'
LOW FREQUENCY LOW NOISE AMPLIFIER

• Coliector·Base Voltage VCllO =5OV TO-92
• Low Noise Level NL=40mV (Max)
Characteristic Symbol Rating ,Unit
Collector-Base Voltage VCBJ:!J 50 V

Emitter-Base Voltage VeBJ:!J 5 V
Collector Current Ic 50 :mA
Collector Dissipation Pc 2~0 mW
Junction Temperature Tj 150 "C
Storage Temperature Tstg -55-150 "C
ELECTRICAL C~ARACTERISTICS (Ta =25°C)
Characteristic Symbol Test Conditions Min 'iYP Max Unit
Collector-Base Breakdown Voltage BVcao Ic=loo,.A,le=O 50 V

Collector-Emitter Breakdown Voltage BVceo Ic =10mA, la =0 45 V
Emitter-Base Breakdown Voltage BVEBJ:!J Ie = -10,.A, Ic =0 5 V
Collector Cut-off Current ICBJ:!J Vca =5QV, Ie =0 50' nA
Emitter Cut-off Current leBJ:!J Vea =5V, Ic =0 100 nA
DC Current Gain hFE Vce=3V. Ic=05mA 120 1000
Collector-Emitter Saturation Voltage Vce (sat) Ic =20mA, la =2mA 0.1 0.2 V
Base-Emitter On Voltage Vae (on) Vce=3V,Ic=05mA 0.62 0.7 V
Current Gain-Bandwidth Product fT Vce=3V,Ic=lmA 50 100 ,MHz
Noise Level NL Vce=l2V,le=-O.lmA
Rs=25KIl 27 40 rrN
Av =8OdB, (f=lKHz)
hFE CLASSIFICATION
Classification Y G L ,V
hFE 120-240 200-400 350-700 600-1000
,c8 SAMSUNG SEMICONDUCTOR 150

KSC1222 NPN ·EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC BASE·EMITTER ON VOLTAGE·

w ~ ,
1
IB _ _
50
/ I 30
t-- f-VeE-3V
1B~20.,A
/'"
IB-1"", II
1B~1"'"
5
IB-l4,IA
3
10-12>A
IB-lo,.\
t I
la-"",
Q.5
la-"",-
Q.3
IB-",",
1
1B-2>A
0 0.1 J
02488101214181820 0.2 OA .0.5 os 1.0 1.2
VeE (y). COI.LECIOfI..I!IIJTTSI VOLTAGE VIlE (V). IlABE-EIIITTEA VOLTAGE
500 1000
460 Illllli
~bi~llv
'--- VcE-3V
.1- -
0
5
~
3
50
0 1
0.Q1 o.oso.os 0.1 0.30S 1 3 5 10 3050 ~ 0.1 Q.3 Q.5 3 5 10 30 50 100
Ie (mA). COLl.ECIOII C U _ 10 (mA). COLLeCIOR CURRENT
. BASE-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE

0
I II
5
I-- Ic-101B
3 f--- t-!-1MHz
IE_O
VIlE (BIll)
"' I......
l'
1 ...... "" 2
........
VeE("') r-....
1
:1111 0
0.1 Q.3 Q.5 1 3 5 10 30 50 100 . 3 . 10 30 50 100
Ie (mA). COLI.ECIOA CUAAENT Yea (y). COLLECIOA-IIASE VOLTAGE
ciS SAMSUNG SEMICONDUcrOR 151


100 100
50
R.ce=6V 50
r-Vce_
30 1--'.' z
I "'f." ~
30
t"--'.,KHZ I~ 10"'-
1,\ 1,\1\ l"- i) 1\ "'
r-... I ,
..........
1 b-- r- 1
f'
o.s
.........
I"'"
o.1 .1
0.01 0,03 0.05 0.1 D.3 o.s 1 3 5 10 om 0.03 o.os 0.1 0.3 o.s 1 3 5 10
Ie (mA). COLLECTOR CUAIIENT k: (mA). COLLECIOR CURRENT
NOISE FIGURE
100
50
VCE~b{
~f-1~
~ i-'"
30
f=100H
~ ~
~~ 10
"\ \
I 5
~ 3
.~ I ......... r-- I""-.. r\

~ 1
If 0.5
0.3
0.1
--
.........
o.G1 0.03 0.05 0.1 0.3 o.s 1 3 5 10
Ie (mA). COLLEC1OR CURRENT

GENERAL PURPOSE AMPLIFIER

• Collector·Ba. . Voltage Vcao =5OV TO-92
• Collector Dlealpatlon Pc =400mW

Characteristic
Collector-Base Breakdown Voltage

Symbol
BVcao
Test Conditions
Ic=100pA,le=0
1 Emitter 2. Base 3. Collecfor
Min
50
lYP Max UnIt
V
•
Collector-Emitter Breakdown Voltage BVCEO Ic=10mA, IB=O 40 V
Emitter-Base Breakdown Voltage BVEBO 'E=-10pA,lc=0 5 V
Collector Cut-off Current ICBO Vca=4OV,IE=O 0.1 pA
Emitter Cut-off Current lEBO VEB=~,lc=O 0.1 pA
DC Current Gain hFE VCE=6II,lc=1mA 70 400
Collector-Emitter Saturation Voltage VCE (sat) Ic =30mA, IB =3mA 0.08 0.50 'V
Base-Emitte~ On Voltage VBE (on) Vce=6II,lc=1.0mA 0.62 0.80 V
Current Gain-Bandwidth Product fr Vce=6II,lc=10mA 300 MHz
10utput Capacitahce Cob VcB =6II,IE.. 0
2.5 pF
f=1MHz
hFE CLASSIFICATION
hFE 70-140 120-240 200-400

K8C1330 NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC
. BASE-EMITTER ON VOLTAGE
100
V,,a • 460I""
la_400""
100
80
/ . /i"'" ___1e~350.1 50
30
- f-'-VCE-fN
i""" ~:,._s6o,...
tL: ~
II~ ,......
i/' ~
_la~260joA 1/
~V la.Jo"" r-- r-- 5
r-
~~ '1 3
la-160+- ~
Y'
I.JOO"" r-- 1
I
20
V
1••6OpA
0.1
8 12 18 20
0.2 OA OJ! OJ! 1.0 1.2
VCE M. COLLEeIQA.EMITl IIOI.TAGE
".. M.IlA8E-1!101ITTER Il0l.1II1II

200
II IIIIII
Vee .fN
-
180
~
~
1 300
.......-
40
: 10
0.1 D.30J! 1 35 10 3050100 3005001000 0.1 OJ! 1 3 5 10 30 50 100
Ie (mAl. COLLECIOR CURRENT Ie (mAl. COI.LECIOR CURRENT
COLLECTOR-EMmER SATURATION VOLTAGE COLLECTOR OUTPU:r CAPACITANCE
101
8 I
I 3
I-- ric-lOla
..
5
I--- f.'~H~
IE_O
I:
1
VIIE(")
•I'...
3
t r-
I6 0.1
VCE(sat)
. . . . r-
2
>
~
i- ....
i- 1
0
0.1 D.3 D.5 3 10. 30 50 100 10 30 50 100
Ie (mA). COLLECIOR CUIIIIENT Veo M. COLLECIOIl-llASE VOLTAGE

TV VHF TUNER RF AMPLIFIER

(FORWARD AGC) T0-92
• High Current Gain Bandwidth Product h = 100M Hz (Typ)
• Low Noise Figure NF=3.odB (Max) at f=2ooMHz
• Low Reverse Transfer Capacitance Cre=o.5pF (Max)
Collector-Base Voltage . VCBO 30 V

•
Storage Temperature Tstg -55-150 9C
1. Base 2. Emiller 3. Collector
Collector-Base Breakdown Voltage BVcBo Ic =10"A, IE =0 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic =5mA,IB=0 30 V
Emitter-Base Breakdown Voltage BVEBo IE = -10"A, Ic =0 4 V
Collector Cut-off Current ICBO VcB =20V,IE=0 0.1 "A
DC Current Gain hFE VcE =10V,lc=2mA 40 180 .
Current Gain-Bandwidth Product fr VcE =10V,lc=3mA 400 700 MHz
Reverse Transfer Capacitance Cre f=lMHz, VCB=10V 0.35 0.5 pF
IE=O
Power Gain Gpe f = 200MHz, IE = - 3mA 20 24 dB
Rs=500, VCE=10V
AGC Current IAGC IE at Gpe=-30dB -10 -12 mA
f=200MHz
Noise Figure NF f=200MHz, IE = -3mA 2.0 3.0 dB
VCE=10V, Rs=500
hFE CLASSIFICATION
hFE 40-80 60-140 90-180

STATIC CHARACTERISTIC DC CURRENT· GAIN

'0
hI-2DD,A I.-'~. ,I, 200
~~V./ I·-l~!.
1•••2O,oA
IB_180pA
vJ.
Ih %:rv IJIlO,o,' - c--
'!JO
,,~ /" ~ IB_ o"A- r--
~~
/' ~ -""" \
'IV ~ la-eo,
\
rtJ. V ,
1·"I4O,A
~
1.-f"A
o '0
o • 3 4 8 10 D.. ~.o.5' 3 5 .0 30
Yeo (V), COLLECIOIIoEIIIITTER WLTAIIE Ie lmA), COUECIOR CURRINT
CURRENT GAIN-BANDWIDTH PRODUCT COLLECI'OR-EMITTER SATURATION VOLTAGE
1poocI '0
_ _ .0\1
r-- ) - - 1o.101a
IL
eel
a 0.D1
. D.. D.3 as -3 5 '0 '30 50 100 D.. D.3 0.5 3 5 '0' 30
Ie ImA), COUECIOR CURRENT leimA), cou.ECIOR CU_
REVERSE CAPACITANCE INPUT ADMITTANCE (yle) vs. FREQUENCY

40
Y8-~+,J.
f-f-·J· Ie 3mA v~rov t--
'.0
IE-O
20 I~J~t!::: '00- mA
1~ I""a;;
I
-1 OMHz
0
7mA
.50 t-- t-
---
Ei -2 o
i"'- /200
i 10r:Y 250
-40
0. 2. 300
0 -60
10 30 50 100 2. 40 60 80 '00
g.o(mlll. CONDUCTANCE

REVERSE TRANSFER ADMITTANCE (yre) FORWARD TRANSF.ER ADMITTANCE (yle)

vs FREQUENCY ¥s. FREQUENCY
YM~g<e+~",
VCE=10V,-
7~A 5mA
H 2:~l-- _ . I-
yle=gfe+jbfe
3.JA
-0. VCE=10V-
2 r - l > kA
100~
~c
-2 Or-
100
.I~ 150
4
~ 150 .
200 ~ "- r-
100 Ic=10mA
Or- 300
~
6
r\.
200
250\
" "
25°i"'" ~.
\-300M~
Or-
t--
~k
K
2bo
15(\- 7mA
-i - V
1=I~MrZ
3m~
.l,i""'-r-.,!0O ...... ~o \00
-0. 6 \ -80 300

\300'1 250M"200 .Y
li 30 or HZ '
-100 1\. k50l- 200 :::;, ...... 5i A
-1. 0
I I
-0.15 -0.1 _0.05 0.05 0.1 -20 20 40 60 60 100
gn(mO~ CONDUCTANCE gfe(mO~ CONDUCTANCE
POWER GAIN AND NOISE FIGURE
•
OUTPUT ADMITTANCE (yoe) vs. FREQUENCY va COLLECTOR CURRENT
,.J..;J+~ '-0 300 3~0 I TLt CiLt

Ope' See
2.5 - Vee -l0V
// ,I
It '1:-200MHZ
V
25 ~:~~Xi-
/j 2sdL
.~
2.0
250
1.1. / Vi 50 7r-- ~
:>
20
•
Gpo
" II
"Ii: ,
I
15
20°1 V i200 260/
r ~
1.5
'/ ,I 10
f~
~,"Y/ ~50 IV 3:
1 1.0 I-100M
~=.3":A " !:A 'ioo jlomA
...::
~ / . . . . 1\..
"-
7rnA 3:
-5 J
0.5 NF V .......
-10 NF, 1=2ooMHz_
Vc'""1QV
-15 As-sao
0 10
0 0.2 0.4 06 0.8 1.0-
goo(m~ CONDUCTANCE lc(mA~ COLLECTOR CURRENT
POWER GAIN AND NOISE FIGURE TEST CIRCUIT
250~
l RFC
'f=:2:00MHz
BW=6MHz
V"",V) ~11
VclV) 10V

KSC1394···,' ,; "NPN'EPITAXIAL SILICON TRANSISTOR
TV VHF TUNER 'MiXER

• High Current Gain Bandwil;lth Product fT = 100MHz (lYp)
• High Power Gain Gpe=20dB (l!IIin) at f=200MHz
• Low Noise Figure NF=3.5dB (Max) at f=200MHz
ABSOLUTE:MAXIMUM RATINGS (Ta =25°C)
, Characteristic Symbol ,Rating Unit

Collector-Emitter Voltage VCEO 3b V
Junction Temperature. Tj 150 °C
Storage Tempera~ure Tstg -55-150 °C
' ..
1. Base 2, Emitter 3, Collector
~;.. ",',. '\
CollectQr-Base Breakdown Voltage BVCBO Ic=10pA,IE=0 30 V

Collector-Emitter Breakdown Voltage BVCEO Ic=5mA,le=0 30 V
Emitter-Base Breakdown Voltage BVEeo IE=-10pA,lc =0 4 V
Collector Cut-off Current ICBO Vc~=20V,IE=0 0.1 pA
DC Current Gain hFE VCE=10V,I.c=2mA 40 180
Collector-Emitter Saturation Voltage VCE(sat) Ic=:1OmA,le=1mA 0.7 V
Current 'Gain-Bandwidth Product h VcE =1OV,lc =3mA 400 700 MHz
Reverse Transfer Capacitance Cre Vce=1OV,IE=0 0.35 0.5 pF
f=1MHz,
Power Gain Gpe VcE =6V,IE=-3mA 20 dB
Rs =500, f=200MHz
Noise Figure NF VcE =6V,IE=-3mA 3.5 dB
Rs =500, f=200MHz
hFE CLASSIFICATION
hFE 40-80 60-140 90-180
"c8,SAMSUNG SEMICONDUCTOR 158

STATIC CHARACTERISTIC DC CURRENT ~IN

,10 200
1•• :Ioo.A la.'l1O,oAj
1a.1IIO,oA
VcEl
~~ ~I••1a.12O,oA
~J
I~ ~v V 1• .Joo,A~
100
r--
,,~ /" v- ' r-- I
1--~I--Ia·T-
~ ,.....",..
~ Ia.~ 1
~30
50 \
V
la~oIO,oA- I
'/ II
la.ao,A
o 10
012345878810 0.1 0.80.5 3 5 10 30
Vco (VI, CIILLEC:IOIMIII _ _
Ie (mA), COLLl!c:lllR_
CURRENT GAIN-BANDWIDTH PRODUcr CDLLECTOHMmER SATURATION VOLTAGE
i:3000'~"·
:~.'W
~~4+~~+4~~-~+H~
10
r-- 1e.1010
I
I~:--
v.
•••
IL
1'00I----+++*f+++----+-++++H+~ Veo l1li)
(::
I:
,o.ot
3510 3050100 0.1 0.8 0.5 • 1 3 5 10 30
Ie (mA), COLLBCIOII CURRENT 'Ie (InA). COLLECIOR CURRENT
REVERSE CAPACITANCE
1.2
t--~.,J...
10.0
1.0 f--por mo a
-- I"--
t--...
i"""'"
0.2
0
35103050
Vea (V), COLLEClOlWlASE VOLTME

TV VHF TUNER OSCILLATOR

• High Cllrrent-Galn Bandwidth Product fT =600MHz (Min) T0-92
• Output Capacitance Cob=1.5pF (Max) .

. Collector-Emitter Voltage VeEo 15 V
1. Emitter 2. Base 3. Coileclor .

Collector-Base Breakdown Voltage BVeso Ie =10pA, IE =0 30 V

Collector-Emitter Breakdown Voltage BVeE~ le=5mA,ls =0 15 V
Emitter-Base Breakdown Voltage BVEso IE=-10pA; le=O 4· V
Collector Cut-off Current leBO Ves = 12V, IE =0 0.1 pA
Emitter Cut-off Current lEBO VEs =3V,le =0 0.1 V
DC Current Gain hFE VeE =10V,lc =5mA 40 . 240
Collector-Emitter Saturation Voltage VeE (sat) le=10mA,ls=lmA 0.5 V
Current-Gain-Bandwidth Product h VeE =10V,le=5mA 600 1100 MHz
Output Capacitance Cob Ves =lOV, f=lMHz 1.5 pF
IE=O
.
hFE CLASSIFICATION
Clailsification R 0 Y
hFE 40-80 70-140 120-240
c8 SAMSUNG SEMICONDUCTOR 160.

KSC1395 NPN EPITAXIAL SILICON TRANSISTOR,
STATIC CHARACTERISTIC DC~ GAIN
10
-r
~
1
I
,
'±± t
-
-
'
,·-8OoA:
1o-8OoA
I!
1.-1O,oA ,
! ,
,
_'~~~
EEmll-.
IiOO
1 1 le-eo,.A
~H lo-eo,.A
r-- ~
--+-, , - f---->----L-L--:- -~
I
+---
J 11a_~
i ! --
:
! !
1e-2O,oA_
:
i1o-1OoA_
i
o 1 I I i
0,234&178.'0
VOl (VI, COUIICIOfI.aIITWL_ Ie CmAI. CClUECIOII-.rr
IlASE-ElllTTEA SATURATION VOLTAGE
CURRENT GAIN-BANDWIDI'H PRODUCT ~ITTEA SATURATION VOLTAGE
Vcol
10
r- 1c-1OI8
I
./ I" """(III)
.L
1 l/
0.111
0.1 G.3 0.& 3 6 10 0.1 G.3 0.& 1 3510 3050100
Ie (mAo). COLLECI'OR CURRENT
~!:-I~Hz
IE.O
2D
......... b
I.......... t-..
OA
o
1 ~ & 10 30 60 100

KSC150S" NPN 'NPN EPITAXIAL SILICON'TRANSISTOR
HIGH VOLTAGE TRANSI)TOR '

• High Collector·Emitter Voltage' VcEo=300V TO-92
• Current Gain Bandwidth Product h =;:40MHz (Min)
CharaCteristic Symbol Rating Unit
Coilector-Base Voltage Vcao 300 V

Collector-Emitter Voltage Vceo' 300 V
Emitter-Base Voltage Veao 7 V
Collector Dissipation .' Pc 700 mW
I, Emitter 2, ease i, Colleclor
Gollector-Base Breakdown Voltage BVcao Ic =100pA, Ie =0 300 V

Collector-Emitter Breakdown Voltage BVceo Ic=10mA,la=0 ~OO V
Emitter-Base Breakdown Voltage BVeao le=-10pA,lc=0 7 V
Collector Cutoff Current Icao Vca =200V, Ie =0 100 nA
Collector-Emitter Saturation Voltage Vcdsat) Ic=50mA,la=5mA 2.0 V
Curfent Gain-Bandwidth Product fr VCE =30V, Ic =10mA 40 80 MHz
Output CapaCitance Cob Vca=50V,le=0 4 pF
f=lMHz
, hFE CLASSIFICATION
hFe 40-80
. 70-140 120-240
.ciS SAMSUHG SEMICONDUCToR 162

KSC1506' NPN EPITAXIAL SILICON TRANSISTOR·
'STATIC CHARACTERISTIC OCCURRENT GAIN
18
IB_'~
IB_1~
IB_1 o,.A
IB-~i,.A-
m_t-
" IB-.G,.A
3Oj---t--t-H-+++++---j-H+-H++1
"TT
I
.IB_
o
o 20 40 eo 80 100 120 140 180 180 200
Yet! (VI, COlLE~ITTEA \IOI.TAGE . Ie ('!'AI, COlLECIOR CU_
COLLECTOR·EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE
_.
I
10
20
5 f---~ I (f..,1MHz I
~
w
~ 3
I~=O
g 10 ---~1-
- -
~ -
!c f:= VBE(sat) --.- - --
II:
::> -- =--. ---
~o.s -- -
~ 0.3
--- r-.
!~ "a1
I r - --
> 1== Vce(sat)
tao5
, 0.03
i-I -- -
I
0.01
I i ' Iii i I i I
3 5 . 10 30 50 100 300500 1000 3 5 10 30 50 100 300
Ie (mA), COLLEC1'OR CURRENT Yea (VI, COLLECTOR-I!A8E VOLTAGE

KSC1i.623 NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY OSC 501-23
.• Complement to ~SA812
ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Collector-Base Voltage . VeBO 60 V

Collector Current Ie 100 ·mA
Collector Dissipation Pe 2()() mW
. Junction Temperature Tj 150 °C
1. Base 2. Emittec 3. Collector
ELECTRICAL CHARACTERISTICS' (Ta=2S0C)

. .
Collector Cutoff Current leBo VcB =60V, IE=O 0.1 I'A

Emitter Cutoff Current lEBO VEB =5V, le=O 01 I'A
DC Current Gain hFE VcE =6V, Ic=lmA . 90 200 600'
Collector-Emitter Saturation Voltage VCE(sat) le=100mA,IB=10mA 0.15 0.3 V
Base-Emitter Saturation Voltage VBE(sat) le=100mA,IB=10mA 0.86 ·1.0 V
Base-Emitter On Voltage VBE(on) Ic= 1mA. VcE =6V 0.55 0.62 0.65 V
Current Gain-Bandwidth Product fr IE= -1 OmA VeE =6V 250 MHz
Output Capacitance Cob· Ve"=6V, 1.=0 3 pF
t=lMHz
Marking
hFECLASSIFICATION
Classlfica,ion 0 y G L
C 1 0
ti~E 90-180 135-270 200-400 300-600
hFE grade
~--
c8 SAMSUNG SEMICONDUcrOR
.~ .
. 164'
KSC1623 NPN EPITAXIAL SlLlCON TRANSISTOR

100 100
Ja -400J.lA J 50
t= VeE-6V
80
1/!o""""'" la=350j.lA 30
II: V
i
l-
~r-- ',=300.A
I· [,V i-""" la=250jAA 10

II
II 80 I .
VV
I......
I1
_ la::: 2OO J-jA
.I
V
8
i
40
,...... r--
- la==150jAA
I
r-
.s.ll la=l ooIAAi-
20
~~ .ll
0.5
'.~50.AI 0.3
o 0.1
o 12 16 20 0.2 04 0$ 0.8 1.0 1.2
v .. M. COLLECTOR·EMlTTER VOLTAGE VIE M. _-EIiITTER VOLTAGE

1000
t= VeE 6V F= VeE-6V
I"
50
30
10 1
1 3 5 10 30 50 100 ,300,600 1000 01 03 0.5 3 5 10 30 50 100
Ie (mAl, COLLECTOR CURRENT I, (mAl, COLLECTOR CURRENT

COLLECTOR·EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE
t::::::: Jc- 101a F= (-lMHz

r--- ',.=0
F= VBE !sat)
= VeE (sat~ 0.5 _
0.3~
_
10
1 3
1m 5 10 30 50 100 300 500 1000
0.1 L--L~3u.,5LL.Ll.!10:J-....J.-:3O"-':50,:.u.L,U.00-..L...3OO.L.J.5OO..u..U.'000.u
Ie (mAl, COLLECTOR, CURRENT Ve• (VI. COLLECTOR·BASE VOLTAGE
c8 SAMSUNG SEMICONDUcr:oR 165

.. NP.N'EPITAXIAL SILICON TRANSISTQ~
TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER,

· MIXER, OSCILLATOR' 10-92
• High Current.Galn-Bandwidth Product fT =600MHz (l\'p)
• High Power Gain Gpe=22dB at f=100MHz .
· ABSOLUTE MAXIMUM RATINGS (Ta 25°C) ,( =


Emitter-Base Voltage Veeo 4 V
Collector c;:urreni Ic 20 mA
Characteristic .Symbol Test Conditions Min l\'p Max Unit
Collector-Base Breakdown Voltage BVcBo Ic =10pA, Ie =0 30 V

. Collector-Emitter Breakdown Voltage BVceo Ic = 5mA, IB =0 20 V
Emitter-Base Breakdown Voltage BVeBo le=-10pA,lc=0 4 V
Collector Cut-off Current ICBO Vce=30V,le=0 0.1 pA
. Emitter Cut-off Current leBo Vee=4V,lc=0 0.1 pA
DC Current Gain hFe Vce =6V; Ic=lmA 40 240
Base-Emitter On Voltage VBe (on) Vce=6V,lc=lmA . 0.72 V
Collector-Emitter Saturation Voltage Vce (sat) Ic=10mA,le=lmA 0.1 0.3 V
Current-Gain-Bandwidth Product h Vce =6V,l c =lmA 400 600 MHz
Output Capacitance Cob VcB =6V,le=0 1.2 pF
f=IMHz
Collector-Base Time Constant CC'rbb' Vce=6V,le=-lmA 12 15 ps
f=31.9MHz
Common Source Noise Figure NF Vce=6V,le=-lmA 3.0 5.0 dB
Rs =500, f=100MHz
Power Gain Gpe .'Vce=6V,l e =-lmA 18 22 dB
Rs =500, f=100MHz
(Typ)
hFE CLASSIFICATION
hFe 40-80 70-140 120-240
.
c8
· ".' . . , .
166
SAMSUNG SEMICONDUCTOR
KSC1674 NPN EPITAXIAL SILicON TRANSISTOR

20
18
lo~llo"Al
IBllocJ
18
loi 1_
90
1o.1IO,oA IB 5 r-+--+-t---t-+--+--t++-t-+--+-+--1
J.,J- 3r-~~~-+-+-H~~~~t-i
1 I'
L_ _
IB.IIO,oA-
II.~-
II."\'''''
II.~
11.-
I
IBro"A
o o.l~~~~~~WU~~~~~~
o 2 4 8101214181820 o 0.2G.4 o.ao.a lD 1.2
V.. (VI. COLLECIOII-EIIITlER WlLTAIIE VBe(VI. _ITlERVOL_

1000
500
300
~ ·IN
10000
~vce.
I
I
1
8
100
50
1 30
0
u.s 3510 30 10 30 50 100
Ie (lIlA), COLLECIOR CURIENT Ie (mAl. COLLECIOR CURRENT
COLECfOR-EMITTER SATURATION VOLTAGE COLLECfOR. 9UTPUT CAPACITANCE
10
1.7 I
r--- l.l~.J
f--- 1e·1018
IE-O
1.5
1 VBE (sat)
"" l' ,...
t-.....
./ 1
r-
YCE(sat)
1
..-
- 0.7
0.1 30

KS.c1674 NPN.'EPITAXIAL SILICON TRANSISTOR
INPUT ADMITTANCE (ylo) FORWARD TRANSFER ADMITTANCE (ylo)

. VI' COLLECTOR CURRENT VI. COLLECTOR CURRENT
100
Vce=6V
50
500
20 300
100 MHz
10'MH,
10 ".; ~~
~~. ~~ 100
. g5
e~S
C
10.7 MHz !i!g 50
'/ 8il
8~ 05 , -- 1616 20
101 'Hz
~
E E
U
II 02
g. n 10
./
0.1
5.
005
0.02 -- 2
001 1
01 02 05 10 20 50 100 0.1 0.2 05 1 2 5 10 21 50 100
lc(mA~ COLLECTOR CURRENT lc(mA), COLLECTOR CURRENT

REVERSE TRANSFER ADMITTANCE (yre) . OUTPUT ADMITTANCE (yae)
vs. COLLECTOR CURRENT VI. 'COLLECTOR CURRENT
I_~~I II~b.7M~' II VCE=6V

r-- boo
...... - 100 MHz.-----: VeE -6V
-~~I III 100 MHz 05

-b~ 107 MHz
1 ,od ~ H,goo II..
900
1 boo 10.7 H, 1I
4
-~ 100 MHz
II
- j
ITr
0.02
o. 5 I I 11111
0.1 02
I 05
I IIIII 10 20 50 100
0.0 1
10 20 50 100
0.1 0.2 0.5
lc(mA~ COUECTOR CURRENT 1c(",A~ COLLECTOR CURRENT

FORWARD TRANSFER ADMlTT ANCE (yfb)
INPUT ADMITTANCE (yib) VS, COLLECTOR OURRENT
VI. COLLECTOR CURRENT
1000
vcs""e .0 V 1000'. . ._ VCB=e.o V
500 500
,~.71 MH,
10,7 MHz
200
oj;t ~Mbz
~'00 MH
Ww
Uu
~~ 100'
-gil>
_'00IM~zl
9" ti!;:
:Ow
!i!g 50 ,bib.
";'1
10.7.MHz 8iil glb 10.7 MHz
,
I
-
If
.. I
20t
10.
/ i.~
5 .
j
5'
2
/
1
01 0.2 0.5
....
10 20 50 100
.1
0.1 02 0.5 '1' .- 10 20 50 100
lc(mA), COLLECTOR CURRENT lc(mA~ COLLECTOR CURRENT,

5
REVERSE TRANSFER ADMITTANCE (yrb)
vs COLLECTOR CURRENT
III
I~ ....
---
100 MHz
V~=60V
.l! ,~
10
mlE!m; REVERS TRANSFER ADMITTANCE (yre)
va. FREQUENCY
veE-e.O V
lc-l0mA
1
,
I I
I I
I
, ,,
~ ....
-g."
10rr
10 7 MH~:
: I
,I,
ff,
" n
h
'if
0,5
02
1
- --,
,.,
-... -7
/-...
- n 0.1
0.05
rffi1~ rm
002
'0
, 002
00 1 001
0.1 0.2 0.5 10 20 50 100 10 20 50 100 200 500 1000
IelmAI. COLLECToR CURRENT QMHz), FREQUENCY
FORWARD TRANSFER ADMITTANCE (yle) OUTPUT ADMITANCE (yae) YS. FREQUENCY

va. FREQUENCY
1000~~g
500
VCE=6 V
~1~
~ 200~--~-+-+~~H+----~-+-+~~~ rlw
U1°O!II• • h
t;~
Iw
8~
50
~~
t;~
05
e----~,
bO,
~~
n
gl.
'i!if 2o1-----+--I-++++++I----+-++-+-++-1-H 0.2

Ii -bfe ,,~' .- .-
1°mlma I
0.1
0.05
002
'----- C-'
- i--
:/
.,.
,,~0--~2~0~~~~~0~U,~00~--~20~0~~5-00~~,UJOOO 0.01 ./
10 20 50 100 200 500 1000
QMHz). FREQUENCY QMHz). FREQUENCY
POWER GAIN AND NOISE FIGURE INPUT ADMITTANCE (yle)

vs EMITTER CURRENT va. FREQUENCY
24 0 100
1~~l6 v.J.
'=100 MHz a ~~7~'
20 5!
0
aii:
II! 16 "~20 Gpo .....
0
i2,
~
5
12 5
- -- -- '" ./
f
z I 0
2
1
.-
.-
/ ,
..... 1"- o. 51L==1---

5
NF
i
a I o. 1
-0051-01 -0.3 -1 -3 -10 20 50 100 200 600 1000
lo(mA~ EM~ CURREI .MHz), FREQUENCY

NPN· EPITAXIAL SILICON TRANSISTOR.
100MHz Gpe, NF TEST CIRCUIT

40F
r-r--~---r---t I----j(o) OUTPUT
500
v"
c8SAMSUNG'SEMICONDUCTOR 170
FM/AM RF AMp, MIX, CONY, OSC, IF

• Collector-Base Voltage VCEO = 30V TO-92
.• High Current Gain Bandwidth Product fT =300MHz (lYp)
• Low Collector Capacitance Cob: 2.0PF (Typ)
C'harecteristlc Symbol Rating Unit
Collector-Base Voltage Vceo 50 V

I
1. Emitter 2. Base' 3. Collector
Collector-Base Breakdown Voltage BVceo Ic=10pA,IE=0 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic =5mA, Ie =0 30 V
Emitter-Base Breakdown Voltage BVEeo IE =10pA, Ic =0 5 V
Collector Cut-off Current leBO Vce =50V, IE =0. 0.1 pA
DC Current Gain hFE VCE=6V,lc=lmA 40 240
Base-Emitter On Voltage VeE (on) VCE=6V,lc=lmA 0.67 0.75 V
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,le=lmA 0.08 0.3 V
Current Gain-Bandwidth Product h VcE =6V,lc=lmA . 150 300 MHz
Output Capacitance Cob f=lMHz, Vce=6V 2.0 2.5 .PF
-
hFE CLASSIFICATION
hFE 40-80 70-140 120-240
.r-

,KSC1675 NPN· EPITAXIAL SILICON TRANSISTOR
STATIC CHARACI'ERISTIC BASE·EMITTER ON VOLTAGE

16 ,
14 lo.70pA -v _IN
f lo=60pA
V 150
::>
lo-60pA U
. /"" 0: 20
lo.40pA gw 10
~5J)
lo=30pA
t2.Q
V f
lo.2OpA i ' .Q
Il5
1B_10pA
0.2
0.1
12 16 20 24 0.1 0.2 OB 1.0 1.2
v... (1/), COLLEC'IOA-EMITTER IIOLTAGE v.. (1/), BASE-a1TTER IIOLTAGE
10000 10
1e=1 0 -
500 r- I-Voe.
300
1 Vaet...
l - I--
j./
1
oe )-
U
10 0.01 II
0.1 0.3 Il5 3 5 10 30 50 100 0.1 Cl3 0.5 10 30
Ie (mAl, COLLEC'IOR CURRENT Ie (mA), COLLEC'IOR CURRENT
COLLECTOR INPUT CAPACITANCE
CURRENT GAIN-BANDWIDTH PROOUcr COLLECTOR OUTPUT CAPACITANCE
1000
1
0.
500
300
1---1-,
- V
.V
L
--1' OIl>
r- 1-11-
-1
..,IV """"r-- Cob
1
tOO
50
i!
j:
,
10 o.1
0.1 o.so.s . 2 10 20 50 0.1 03 0.6 1~ 3 5 10 30 50 100
Ie (mA), COLLECTOR CURRENT Yea (V). COLLECn)R..BASE VOLTAGE

KSC1730 NPN EPITAXIAL
. SILICON TRAN'SISTOR
.
TV VHF, UHF TUNER OSCILLATOR

TO·92
• High Current Gain Bandwidth Product fr=1100MHz (lYp)
• Output Capacitance Cob=1.5pF (Max)
Characteristic Syrnbol Rating Unit
Collector· Base Voltage VeBo 30 V

Collector· Emitter Voltage VCEO 15 V
Emitter·Base Voltage VEBO 5 V
Characteristic Symbol Test Conditions Min • Typ Max Unit
Coliector·Base BreakdOwn Voltage BVeBo Ic =10pA, IE=O 30 V

Collector-Emitter Breakdown Voltage BVcEo Ie = 5mA, IB =0 15 V
Emitter-Base Breakdown Voltage BVEBG IE=-10pA,l c =0 5 V
Collector Cut-off Current ICBO VeB =12V, IE =0 0.1 pA
DC Current Gain hFE . VeE=10V,lc=5.0mA 40 240
Collector-Emitter Saturation Voltage VeE (sat) le=10mA,IB=1mA 0.5 V
Cu~rent Gain-Bandwidth Product h VeE=10V,le=5mA 800 1100 MHz
Output Capacitance Cob VcB =10V,f=lMHz 1.5 pF
IE=O
Collector-Base Time Constant CC'rbb' VcE =10V, f=31.9MHz 10 20 ps
IE=-0.5mA
hFE CLASSIFICATION
_.
hFE 40-80 70-140 120-240
173
,.
.KSC1TJO NPN· EPITAXIAL SILICON .TRANSISTOR
K-,k::.
10 1000
I •
,
- 1a-90,.A
18~-
I
500
300
II -1011
.- Ia_,[-
V IB-6O,.A_
I
r I
lJ-so,A_
'100
tr II_~
I Ii!
., I
1a-3O,.A_ 1 50
. I
1a-2O,.A_
30
I I
II-lj_
o 10 Ii
o 1 9 10 05 . 10 30
Ie (mA), COLLECIOR CURRENT
CURRENT GAI~BANDWIDTH PRODUCT .COLLECTOR-EMITTER SATURATION VOLTAGE
2000 10
vJl I--- 1c.101a

I
L
i::= = viI
Vee sal) V
V
0.1 03 • 05 1 3 5 10 30 0305 3510 30
Ie (mA), COLLEIlIOR CURRENT Ie (mA). COUECIOA CURRENT
OUTPUT CAPACITANCE· INPUT ADMITTANCE (ylb) vs. FREQUENCY
2A
I- f= tOOOJHZ
Y'b~9.+~
r----:-i-1I,~z VCB=10V--=-'
~ ~I
. IE-O 800
-20
2D
.. ~ooo
,,-
I\~ /' r--.' N OO
- 100-1--
0
,.... ~ I
N ~
~ 1c=30mA
~ r--....
I
1'::--- 0
1"- 50 t--
~ N-
-80
........ , 1"- I
I '"- 11'"
15
01 -100
10 30 50 100 o 20 40 80 80 100
Yeo (VI, COLLECIOIWIASE 1IOLTAGE glb(mD), CONDUCTANCE
c8 SAMSUNG SEMICONDUCTOR .174

KSC1TJO NPN EPITAXIAL SILICON TRANSISTOR
FORWARD TRANSFER ADMlnANCE (yfb) OUTPUT ADMITTANCE (yob) vs. FREQUENCY

v.. FREQUENCY
100 10
1c=3m~/5 'IN/-
~~
10J)OMI;'IZ
ylb~gIb+lblb
lOt.... , K
10 15
VCB"'lOV~
I j
Yob=gob+jbob
v
'/; &.10
VC B"",,0
a
0
.......... .......
r..... "'- II
Ii ~"
t~ ....... r-.... ..... II '/
I
r-..... ....... 'f... "'-
"- /J
600
---j3'
f=100MH~
~ r- f"". ",-' 'I
~~ ",\ 400 " 4- 400
20
aDo,"", \ ,
1000 U. 21 f"J 100
o
-SO - 60 - 40 - 20 20
, gtb(m2), CONDUCTANCE g.b(mQ~ CONDUCTANCE

REVERSE TRANSFER ADMlnANCE(yrb)
v.. FREQUENCY
y!.,=g",~""" 200r -n
-VCB"""0V
400 I_J -1-
l- t..,
2
6~O/-
4
aoo~ -) -- ~J
1=1000 MHZ/ / ,I
Ie 15 rnA 1(} 5,0 30
6
-1 0
-10 -oa -06 -04 -0.2
gm(mO), CONDUCTANCE

KSC1845 ' NPN ,EPITAXIAL SILICON TRANSISTOR

TO-92
•. Complement to KSA992
Collector-Base Voltage Vcoo 120 V

Emitter-Base Voltage VEoo 5 V
. Base Current Is 10 mA
Collector Dissipation Pc 'i00 mW
Characteristic Symbol Test Condition Min Typ- Max Unit
Collector Cutoff Current Icoo Vcs= 120V, IE=O 50 nA

Emitter Cutoff Current IEoo VEs=5V, Ic=O 50 nA
DC Current Gain hFEl VcE =6V, Ic=0.1mA 150 580
hFE2 VCE=6V,lc=1mA 200 600 1200
Base Emitter On Voltage VHt (on) VCE=6V,lc=1mA 0.55 0.59 0.65 V
Collector Emitter Saturation Voltage . VCE (sat)· Ic=10mA,ls=1mA 0.07 0.;3 V
Current Gain Bandwidth Product fr VcE =6V,IE=-1mA 50 110 MHz
Output Capacitance Cob Vcs=30V, IE=O 1.6 2.5 pF
f=1MHz
Noise Voltage NV 25 40 mV
hFe(2) CLASSIFICATION
,
Classification P .1
F E U
hFE(2) 200-400 I 300-600 400-800 600-1200
c8 .SAMSUNG SEMICONDUCTOR. 176

KSC1845 NPN· EPITAXIAL SILICON TRANSISTOR

10 10
Is=16,u\ I.
~
,., I. 1.4.A
1
.,...,'"
- 1-
~-1 2uA
~
/' ~
le=14,..A
0.8
!J ~-12uA
...
Z V I'
~
"., 1-1
0
.--
IU
,;-
~
0:
~
1._l lOuA 0: I-"I.-O·i
~
"
U 08 ~
fA ~ Ie BJ.tA
0:
~~ I-'" 1'-"luA
--
0
I; ~
WI IB!6~ r-- ~ 0.4

1-
,..- ~
~ IB=O.~~
~ f-- ~l
U
~ I---" l -
V 1 f-- IB=O.2~A
le- 4,..A
~l -
li
02
'/ 1o-2uA
I
Y' 10 oj
w ~ 50 50 100
Vc.(V), COLLECTOR·EMITTER VOLTAGE
Vc,(V). COLLECTOMMITTER VOLTAGE
•
1000 0
J.Vce =6V' Ie 10-le
900 Pulse Tes~ Pulse Test
5
800
II 700
1
'Vf£ (sat)
1\
600
I- 5
~ 500
g 400
1\
I 300
200
.
! 0.05
1
Vee (sat)
-1003
100
0 0.0 1
001 0.03 0.1 030.51 5 10 305010
0305 3 5 10 30 50 100
lc(mA). COLLECTOR CURRENT
lc(mA~ COLLECTOR CURRENT
CURRENT GAIN-BANDWIDTH PRODUCT COLLECTOR OUTPUT CAPACITANCE

10K 10
... ~=-f~
Vce=6V
~ 6
K
~ 3
K
3r- ,..
I.
Z
~
500
300
K
I
~
-- 1""-1"'-
I
~ 50
10
0
V 8 o.5
o.3
::; 30
:E
10 o. 1
-0.1 0.3 0.5 1, 3 5 10 - 30 - 50 100 10 30 50 100
l,(mA~ EMITTER CURRENT Vcs(V), COLLECTOR.JIASE VOLTAGE

KSC1845 ;NPNEPITAXIAL SILICON TRANSISTOR
, , ~' t
. ' '. .
COLLECTOR CURRENT EQUIVALENT INPUT CURRENT NOISE SOURCE
va BASE-EMITTER VOLTAGE
100 ~ 100
50
30
c,-BV
Pulse Test =
==
-2 50 j---VCE-ev
30
r--t.f=IHz '" '"
r-~F=10 log [1+ 4~ ( ~
a / I 10 EK' 1.38X10"u IJ'~-')
10 1n·:a·RGJ]
\~
5
3
I: '=T, 273.15+Ta(K)
~
.......:: t:::~,
1
5 i!i O. 5
1
~ 0.3 I'
1 / .~
fa O. 1 ..-!~'"
0.05 1:1 0.05
0.03 i 0.03
0.0 1
0.4
I 0.5 0.8 0.7 0.8 0.9
.e 0.0 1
0.01 003005 0.1 0.3 0.5 3 5 10
V"(V), BASE VOLTAGE IclmA~ COLLECTOR CURRENT
EQUIVALENT INPUT CURRENT NOISE SOURCE 'NOISE FIGURE MHP
t~: :"'1' ,- ~
~VC,~BV
1M
a E."'-'Hz "'
!=NF-10 log 10 [1 + 4~ ( ~
LL'
In-1·RG))
500K
300K
11«...
'~"&+--
III
5z 'K: 1.38X10--21 (J·K·') .r--.. ~t'- ~ N
Ii
oc ~T. 273.15+ Ta(K) ~ lOOK
"
I
~
50 50K
~
u
30
30
K
I'
i!i
!!I
10
5
3
10l1z
i 10
K~
K~ f'o;;. ·0
K1,
. I...... ~,
I
~ 1KHz
l00H~
i1f 1 K:S ~ I--'
0.5 500
~ 0.3 30O~
100 ~
Ii 0.,1
"~
0.01 0.03 0.05 0.1 0.30.5 3 5 10 0.01 0.030.05 0.1 0.3 0.5 3 5 10
1e(mA), COLLECTOR CURRENT Iclm~ COLLECTOR CURRENT
POWER DERATING
800
700
'\.
~
"\.
'\
100
o 25 50 75 100
'\. 125 150 175 zOO
T.(·C) AMBIENT TEMPERATURE
c8 SAMSUNG SEMICONDUCTO,R 178

KSC2001 NPN SILICON TRANSISTOR
GENERAL PURPOSE APPLICATIONS

HIGH TOTAL POWER DISIPATION T0-92
(PT=600 mW)
High hFE and LOW Vedsat)

Base Current I. 150 mA
Storage Temperature Tstg -55"'150 °C 1. Emiller 2. Collector 3. Base
• Base Emitter Voltage VeE VCE=6V, le=10mA 600 640 700 mV

Collector Cutoff Current leBO VcB =30V, IE=O 100 nA
Emitter. Cutoff Current lEBO VEB =5V, Ic=O 100 nA
• DC Current Gain hFE1 VcE=1V, le=100mA 90 200 400
hFE2 VCE=1V, le=700mA 50 140
• Collector Emitter Saturation Voltage VCE(sat) Ic=700mA, IB=70mA 0.2 0.6 V
• Base-Emitter Saturation Voltage VBE(sat) Ic=700mA, 1.=70mA 0.95 1".2· V
Output Capacitance COb VeB=6V, IE=O, f=1MHz 13 25 pF
Curent Gain Bandwidth Product fr VcE =6V, IE= 1 OmA 50 170 MHz
• Puls~ test: PW .. 350 I's, duty cycle .. 2% Pulsed
hFE1 CLASSIFICATION
Classification R' 0 Y
hFE1 90-180 135-270 200-400
c8 SAMSUNG SEMICONDUCTOR ·179

KSC200212003 NPNEPITAXIAL .SILICON TRANSISTOR

.: Complement to KSA953/KSA954 TO-92
ABSOLUTE MAXIMUM RATINGS.(Ta=25°C)
Collector-Base Voltage : KSC2002 Vcoo 60 V

, KSC2003 80 V
Collector-Emitter Voltage KSC2002 VCEo 60 V
; KSC2003 80 V
Emitter-Bllse Voltage V~oo 5 V
Collector Current (DC) Ic 300 niA
-Collector Current (Pulse) Ic 500 rnA
Storage Temperature Tstg -55"'150 °C 1. Emitter 2. Collector 3. Base
-. PWs, 1 Oms, Out' Cycle ~50%
ELECTRICAL CHARACTERISTICS (Ta= 25 °C)
Collector Cutoff Current: KSC2002 Icoo Vcs=60V, IE=O 100 nA

: KSC2003 Vca=80V, IE=O 100 nA
Emitter Cutoff Current IEeo VEs=5V, Ic=O 100 nA
• DC Current Gain' hFE ,' VCE'" 1V, Ic=50mA 90 200 400
hFE2 VcE=2V, Ic=300mA 30 80
, Base-Emitter On Voltage VeE (on) VcE=6V, 10= 1Om,6, 600 645 700 mV
.Collector-Emitter Saturation Voltage VCE (sat) . Ic=300mA, Is.=30mA 0.15 0.6 V
• Base Emitter Saturation Voltage VBE (sat) Ic=300mA,le=30mA 0.86 1.2 V
Current Gain-Bandwidth Product fr VcE =6V,IE=-10mA 50 140 MHz
Output Capacitance Cob Vce=6V, IE=O, f=1MHz 7 15 pF
- Pulse Test: PWS,350,..s, Duty CycleS,2% Pulsed
hFE(1 ) 90-180 135-270 200-400


20 500
~ I - ~1bo; hi I
..... 18=90 A ,-,.'
IB==BOf.lA "
Pc=-SOO mW
' .~I
... 16
..... 0
~!~~
Z le=70,ItA
II!0:
::>
"g
",- ~l60,...'
l,l50.AI
-.
"~
0
f--- f---~~
/~
.I. ~~~~i
~~ <f!'~
\o,~ ~"'~
\0
W>w,":.'l-,'2. f$<':.P-
"~ ".. l,l40~1 ~~ V , ~.'"Pc=600 mW .... '\ 1')((\ '\

,0
I'V V ~~ ......
0
"~ I,Lo.A I
E
:§
, I AI
18=20 A V 's=d SmA ..... --
O~
10
,,~'0 AI I
~~O I 's=b
10 20 30 40 50
V.,.(V), COLLECTOR-EMITTER VOLTAGE VCE(V), COLLECTOR-EMITTER VOLTAGE
~
10 COLLECTOR-EMITTER SATURATION VOLTAGE
le-l0
Pulsed
~
I
I 05
03
1
VSE(sat)
i
:mn. . . .4 0
~
>
005
003
1
VCE(sat) .." 1
l~~~~~~~~--L~~~~~UUU 00 1 ,
III I
01 O.:?05 1 35 10 3050100 3005001000 0.1 0 .. 05 1 3 5 10 3050 100 3005001000
lc(mA), COLLECTOR-CURRENT lc(mA), COLLECTOR-CURRENT
BASE-EMITTER ON VOLTAGE COLLECTOR OUTPUT CAPACITANCE
1000 100
VcE =6 V
500
300
Pulsed'~ ~E_l°j;tt
0 --
I H-
1,00 I
If -<
0
" I
i
8
50
30
10
I
!
I ........
-
0 ~
-0--- ~.
-,
J 1
5
3
I I
~rl
0'5
f--
03
o 1 II 1
a3 a4 a5 06 07 o.a a 9 10 1 1 1.2 13 01 a3 05 3 5 10 30 50 100
V,.(V), BASE-EMITTER VOLTAGE V,"V), COLLECTOR-BASE VOLTAGE
c8 SAMSUNG SEMICONDUcToR 181

KSC200212003 NPN <'EPITAXIAL SILICON TRANSISTOR
CURRENT GAIN-IIANDWIDTH PRODUCT SAFE "OPERATING FREA

1000
Vce-6 V
500
~l~~
-
300
!Z "-
i !
B 100
")~
~'b 1&>"
a:;
!!i..... 50
I
~ 30 " ......
'
~ 10
Ji
~
1
-1 3 -& -10 -30 -50 -100 300 3 5 10 30
~
50
i
100 300
Ia(mA). EMITTER CURRENT Vco(V), COLLECTOR-EMITTER VOLTAGE
POWER DERATING
0.8
'\.
I\.
r\.
" '\
25 50 75 100
'\
125 150 175 200
c8 SA~SUNG SEMICONDUCTOR 182

KSC2223 NPN EPITAXIAL SILICON TRANSlsroR
.. HIGH FREQUENCY AMPLIFIER

Very small size to assure good space factor In hybrid Ie applications SOT-23
• fy=600MHz'TYp. (lE=-1mA) .
• Cob=1pF Typ (Vca=6V)
• NF=3dB Typ (f=100MHz)
ABSOLUTE MAXIMUM RATINGS (Ta = 25 0 C)
Coliector·Base Voltage Vcoo 30 V

Storage Temperature ·C
I
Tstg -55-150 1. Base 2. Emitter 3.· Collector
ELECTRICAL CHARACTERISTICS (Ta= 25 DC)
Collector Cutoff Current ICBO VCE =30V, le=O 0.1 ",A

DC Current Gain hFE Vce=6V, Ic=1mA 40 90 180
Collector Emitter Saturation Voltage Vce (sat) Ic=:1OmA, IB=1 rnA 0.1 0.3 V
Output Capacitance Coli VcB=6V,.le=0, f=1MHz 1 pF
Current Gain Bandwidth Product fr Vce=6V, Ic=-1mA . 400 600 MHz
Time Constant CC'rbb VcB=6V,le=-1mA 12 ps
f=31.9MHz
Noise Figure NF Vce =6V,le=-1mA 3 dB
f=100MHz, Rs=50!l
Marking
hFE CLASSIFICATION
Classification R '.0 y
hFE 40-80 60-120 90-180
hFe grade

COLLECTOIj CURRENT vs. DC CURRENT GAIN ¥s. COLLECTOR CURRENT

10
COLLECTOR TO EMITTER VOLTAGE
I
,1000
Vee" 60V
10-8""" 500
.. 8
.-- ",-70,..
z
lI!a:
::>
"a: /"
/
- IB=60~
I,=sci,..
0
~
0 1,=46,..
"~ 'I 10=36,..
E
Ji
2
Is""2o,.u\
,,=16,..
0
o 2, 10 12
I
14 16 18 20 '.1 0.2 0.5 10 20 50 100
VeaV). COLLECTOR-EMITTER VOlTAGE Ic(mA~ COLLECTOR CURRENT
BASE AND COLLECTOR SATURAnON VOLTAGE COLLECTOR CURRENT ¥s.

¥s COLLECTOR CURRENT BASE TO EMmER VOLTAGE
10 1000
~ 10'ls Vce=6.0V
500
5, 0
~
200
100
Z 1.0 V,.(aat}
~
§ o. 5
~
go, 2
J 0
1 Vee (sat) ./
1
jM s
~ 1
~0,0 2
O,S
0,2
'0.0 1
0.1 0.2 0,5 10 20
0, 1
0,2 0,4
0,6I 0,8 LO 1,2
IdmA~ COLLECTOR CURRENT V,.(~ BASE-EMITTER VOLTAGE
DC CURRENT GAIN vs. COLLECTOR TO BASE TIME ,CONSTANT

COLLECTOR TO EMITTER VOLTAGE ¥s. EMITTER CURRENT
1000e~~ "00mEl~
~-LOmA Vcs=-6.0V
500 !i: 50 -=31.9MHz
I 2001---+-I-+-+-Hf+++---I-+-H-+++H iI 2°r--t-t~~~-+-r+++~r--t-rtttH~
t'00 ~ '\.
g~~~
1 50~--1-~1-~++H----+-1-+1-~~ 1'0,~11~11;11
i
201---+-I-+-+-Hf+++---I-t-H-+++H
J
0,1 0,3 -1 3 -10 20 50 -100
VceM. COLLECTR·EMnTER VOLTAGE IdmA). EMITTER CURRENT

NOISE FIGURE GAIN BANDWIDTH PRODUCT

ys EMITTER CURRENT YS. EMITTER CURRENT
10000
Vce=6OV Vee 6.OV
24 f=100MHz
2 0
fz 8 ~
~
t-....
~
4
0
0.1 -0.3 10
100
-01 -0.2 0.5 5 -10 20 50 100
I,(mA~ EMITTER CURRENT 'e(mA~ EMITTER CURRENT
INPUT AND OUTPUT CAPACITANCE POWER DERATING

0 200
f 1.0MHz
180
5
160
3
2
0
0
"
~(lceOI
1
Cob (,,=01 0
\
0 1\
5
0 I\.
0
\
0.2
0
1,\
0.1 0.2 0.5 1 2 5 10 20 50 100
o
2~ 0 20 40 60 80 100 120 140 160 180
Veo(1/) COLLECTOR-IIASE VOLTAGE
T,(·C~ AMIBIENT TEMPERATURE
V",(VI EMITTER-aASE VOLTAGE
c8 SAMSUNG SEMI~ONDUcrOR . 185

NPN EPITAXIAL
. SILICON TRANSISTOR
.
HIGH VOLTAGE POWER AMPLIFIER

• Collector - Base Voltage Vcao =200V .TO-92L
• Current Galn-Bandwidtll Pl'Qduct fT =100MHz (Typ)


Collector-Emitter· Voltage . VCEO 150 V
Emitter-Base Voltage . VESO 5 V
CollectOr Current Ic ·50 mA
Junction Temperature Tj 150 . °C

Collector-Base Breakdown Voltage BVcBO . Ic =100pA. IE =0 200 V

Collector-Emitter Breakdown Voltage BVcEo ,1~=5mA. Is=O 150 V
Emitter-Base Breakdown Voltage BVEBO IE .. -100pA.lc" O 5 V
Collector Cut-off Current Iceo Vce -200\1, IE =0 0.1 pA
DC Current Gain hFE VcE =5V.lc -1OmA 40 240
Collector-Emitter Saturation Voltage VCE (sat) Ic =10mA. Ie =1mA 0.5 V
Current Gain-Bandwidth Product fr VCE=30V.lc .. 10mA 100 MHz
O!Jtput Capacitance Cob Y,~~1=1OV. IE =0 3.5 5 pF
- KHz
hFE CLASSIFICATION
hFE 40-80 70-140 120-240
,
KSC231 0 NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN
!500 Vce.5V--t--+--++-+++tt---t-H
3OOf-+++t+t----!--+++-++++I---+-H
o.s 10
Ie (mA), COLLECt'QA CURRENT

COLLECTOR-EMITTER SATURAnON VOLTAGE
- Vce=3f1!I
10
- f-lc-- I
~r-.
VOE("')
Vee 101)
V
1
0.1 D.3 o.s 3 5 10 3050100 0.1 0,3 0.5 3 5 10 30 50 100
Ie (mAl, COLLECIOII CURRENT Ie (IlIA), COLLECIOII ~

1000 1.6
=
500
'300 ~:!S'~~UIae VI
'3OOms
I
,"'"
""
0
I
--+---I
r-....
.......
t
3 5 10 30 50 100
VOl M, COLLECION..nEA 1IOLllVE
300 500 1000
--- ,I
i
50
T. ('C), AMBIENT TEMPERATURE

100
'" '" 150
c8 SAMSUNG SEMICONDUCTOR ,187

K9C2316 NPN EPITAXIAL SILICON TRANSISTOR . .
AUDIO POWER AMPLIFIER APPLICATIONS

• Driver Stage Amplifier ~ TO-92L
.. ABSOLUTE MAXIMUM RATINGS (Ta 25°C) =

Characteristic Symbol Ratin~ Unit

. Collector-Emitter Voltage . VCEO 120 V
Collecto'r Current Ic 800 mA
Storage Temperature Tstg -55- +150 . °C

Characteristic Symbol Test Conditions Min Typ Max Unit·
. '\
Collector-Base Breakdown Voltage BVceo Ic=1mA,IE=0 1.20 V
Collect~r-Emitter Breakdown Voltage BVcEo Ic =10mA, Ie =0 120 V
Emitter-Base Breakdown Voltage BVEeo IE=-1mA,lc =0 5 V
Collector Cutoff Current Iceo =
Vce 120V, IE =0 0.1 p.A
DC Current Gain hFEl VCE=5V,lc=10mA 60
hFE2' VCE=5V,lc=10OmA 80 240
Collector-Emitter Saturation Voltage Vcdsat) Ic =500mA, Ie =50mA 1 V
Current-Gain-Bandwidth Product h VcE =5V,lc=100mA 120 MHz
Collector Output Capacitance Cob Vce =10V,IE=0 30 pF
f=1MHz
hFE CLASSIFICATION
Classification 0 y
hFE(2) 80-160 120-240

KSC2316 NPN EPITAXIAL'SILICON TRANSISTOR
l r--
---
VCE-5V
800 'BLsJ;:;;:;;; F- IB_1C~nA_
-
I
,./ '1---- IB.7mA-
/ '/ .1
IB.SmA-
v~ ~ I
IB_4mA- IL
Ii ~ V,.... la-r-I
IfA ~ 1
IB-ar
I.
, 1"I~A
la_ol
10 0.2 0.4 os
VIo M,IIA8E-EMITEA VOLTAGE
OB 1.0
Veo M, COLLEC1OR-EMITTER VOLTAGE
•
1000 1-.
1--
-..jvce-sv rHo -101.
500
300
l- I 3
I"""
I~ os
G.3
~
~
i Q
1
~.o.os
G.03
10
1 3 5 10 30 50 100 300 500 1000 0.1 0.3 os 1 3 5 10 30 100 300 500 1000
Ie (mA), COLLEC1OR CURRENT • IC (mA), COLLEC1OR CURRENT

4.0
3.5
z
~ 3.0
if •
~ 2.5
~
Q
0:
~ 2~
l'. To
~ 1.5
1'-
"
f 1.0
o.s - -r--"'-
r- T.
~
~ 150
3 5 10 30 50 100 50 100
Veo M, COLLEC1OR-EMITTER VOLTAGE T. rC). AMBlENT.TEMPERJmJRE

KSC2328A NPN" EPITAXIAL SILICON TRANSISTOR
$" .
AUDIO POWER AMPLIFIER APPLICATIONS

• Complement to KSA928A To-92L
• Collector Dissipation Pc =1 watt
• 3 watt Output Application .

Collector Current Ic 2 A
Storage Temperature Tstg -55- +150 OC
1. Emitter,2. Collector 3. Base
"' ,,:. ;
Characteristic Symbol Test Conditions Min 1\tp Ml!lx Unit

-. BVcBO Ic=loopA,IE=O 30 V
Collector-Emitter. Breakdown Voltage BVcEO Ic=10mA, le=O 30 V
Emitter-Base Breakdown Voltage BVEBO IE=-1mA; Ic=O 5 V
Collector Cutoff Current IcBO Vce =3O\I,IE=0 100 nA
Emitter Cutoff Current IEeo VEe =5V,lc =0 100 nA
DC Current Gain hFE VCE =2V, Ic =500mA 100 320
Base-Emitter On Voltage VeE (on) , VCE=2V,lc=500mA 1.. 0 V
Collector-Emitter Saturation Voltage VCE (sat) Ic=<l.5A,le=O.03A 2.0 V
Current Gain-Bandwidth Product h' VCE=2V. Ic=5OOmA 120 MHz
Output CapaCitance Cob Vce=lev, IE-O, 30 pF
f=lMHz
, hFE CLASSIFICATION
Classification 0 y
hFE 100-200 160-320
'c8 SAMSUNG SEMICONDUCTOR 190

.KSC2328A NPN EPITAXIAL SILICON TRANSISTOR

1400
1200
I 'Bi7mA 1200
VCE_W
V
IBj8mA I
I' IBrmA
18j4mA
-
IBr mA
IBrmA,
200 .- 200 I
IBrmA
10 12 14 18 0.2 0.4
lJ
D.8 1.0 1.2
VCE (Y). COLl.ECI'OR EMITTER VOLTAGE -(Y). -.eMITTER VOLTAGE
•
DC CURRENT GAIN, COLLECTOR-EMITTER SATURATION VOLTAGE
3
II
~-50I.
VCE -2'J T.... 25OC
1
Z1000
~500 o.s
I~
~ r-.....
j 100 0.1
50
30 0.0
I
I
0 I 0.01
10 30 100 300 1000 3000 10 30 100 ~ 1000 3000
Ie (mA), COLLECTOR CURRENT Ie (mA). COLLECI'OR CURReNT
1.2 ,-1c(MAX PULSE
\'ms
Z
51
~
1.0 i
a:
Ic(MAX)
,.
iii "- r'\. a
a:
~ D.8
~D.5
a:
"
'" "'-
WD.3
~ T._
.
0
~
0.6
~
~ 0.1
O.c I I
OPERATION
.';' 0.4
" 0.D5
0.2
~ 0,03 VceoMAX
0.1
o 20 40 60 80 100
T. (OC) AMBIENT TEMPERATURE
120 ""I\.
140 160
0.01 IIII
VCE'M. COLL.ECfQA EMITER VOLTAGE
10 30

· KSC2330 NPN EPITAXIAL SILICON TRANSISTOR
COLOR TV CHROMA OUTPUT

• Collector-Base Voltage Vcao =300v TO-92L
• Curren~ Gain-Bandwidth Product It =50MHz l1'tP)
Coliector.Base Voltage VCBO 300 V

Collector-Emitter Voltage Vcrro 300 V
Storage Temperature Tstg -55- +150 OC
Charactel'lstlc Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO Ic=100,.A,le=0 300 V

Collector-Emitter Breakdown Voltage BVeeo Ic =5mA, le=:'O 300 V
Emitter-Base Breakdown Voltage BVEBO le=-100,.A,lc=:0 7 V
Collector Cut-off Current ICBO Vce=20ov, le=O 0.1 ,.A
DC Current Gain· hFE Vce=1OV,lc=20mA 40 240
Collector-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=1mA 0.5 V
Current Gain-Bandwidth Product h Vce=3OV, Ic=10mA 50 MHz
Output Capacitance Cob Vce=1OV,le=0 4 pF
f .. 1MHz
hFE CLASSIFICATION
hFe 40-80 70-140 120-240


20
18
16 >> t---- -
IBsl~"">_
;"='j""-
! iB.aor
! i"·aor
'".j~.
;"·20r
20 40 80 80 100
Vee (V), COLLECTOR EMITTER VOt.TAGE Ie (mA);COLLECIOR CURRENT

z
10 100
60
30
r - f_1MHz
r - le_O I
9 I--
~
"!(
II)
0.5
0.3
~
i 0.1
:!
i 0.05 0.5
f-
'il 0.03 0.3 .>
>
0.1
.1 10 30 50 100 300 10 30 50 1(J(, 300
Ie (mA), COLLECTOFi CURRENT VQ8 M. COLLECTOR BASE VOLTAGE
POWER DERATING
1.6
1.4
2 1.2
~ 1.0
I
II:
~~ 0.6
f.
0.8
0.4
"'" ~
""-1""-
0.2
o
o 50 100
T. (Oe) AMBIENT TEMPERATURE

"" 150

', .. NPN,EPITAXIAL SILICON TRANSISTOR
. . • . . I
LOW FREQUENCY· AMPLIFIER

MEDIUM SPEED SWITCHING TO-92L
• High Collector-Base Voltage Vcao=8OV
• Collector Current Ie =700mA
• Collector Dlssipetlon Pc =1W
ABSOLUTE MAXIMUM RATINGS (Ta:=25°C)

Collector-Emitter Voltage Vceo 61t V
Collector Current Ic 700· mA
. Collector Dissipation· Pc 1 W
Junction Temperature Tj. 150 °C 1. Emitter 2. Collector a. Base
ELECTRICAL
. CHARACTERISTICS. (Ta =25°C)
.
Characteristic Symbol Test Conditions Min ~p Ma~ Unit
Collector-Base Breakdown Voltage· BVCBO Ic .. 1OOpA,le-0 80 V

COllector-Emitter. BreakdoWn Voltage BVcEO Ic=;1OmA, la=O 60 V
Emitter-Base Breakdown Voltage BVESO IE=-10pA,lc=0 8 V
Collector Cut-off Current lceo Vca=6OV. IE=O 0.1 pA
Emitter Cut-off Current lEBO VEa =5V,lc=0 0.1 pA
·DC Current Gain hFE Vce='l!tI,lc=50mA 40 240
Collector~Emitter Saturation Voltage Vee (sat) Ic=500mA,la=50mA 0.2 0.7 V
. Base-Emitter Saturation Voltage_ VBE (sat) Ic .. 500mA,la=50",A 0.86 1.20 -V
Current-Gain-Banqwidth Product fr Vce -10V,lc=50mA 30 50 MHz.
Output Capacitance Cob Vca-1ov,IE"0 8 pF
f-1MHz
Classification 0 y
hFE . 70-140 120-240
>.c8 SAMSUNG SEMICONDUCTOR· :..

:
1~4
"'.
200
180
_.1. ___ -1 ___ 1-;_ SOD .--~ -- +
---+·Vce_2V
300
180 r .-- --~I.~;.4mA
i
t .•
....
1 '40 r
a: 100
"a:u120 V"
~ 100
:l
0 80
_-.. . .- . . . -------I..
-------------II..
,'OmA
OBmA
!:
U
-.j. ~.-_I~~-:-
",. ., I I I
u
1 L----------.
80 ... ...,le=O.6mA.
i 10 ,-_:=:~-=-J __"!. '
.!!
L-___
.!!
40
--+-----+--_...,I.~0.4mA
20 r-----'--:---.....- .........,I•.O.2mA
1{J 15 20 25 30 35 40 45 50 0.2 0.4 0.6 08 1.0 1.2
Vee (V). COLLECIOMMITTER VOLTAGE VIe (V), BASE-£MITTER VOLTAGe
I
240 10
II :-:-
V.;.=W ~
200 ~ 3
IC!,!~I.; -I,
g
~
ffi
Ii
160
120
~
- z
Q
~
5
~ 0.3
1
0.5
f-. Vee (sat)
8 .-1--'
g ! I
I I
teo ~
>
0.1
Xo.os VCE(~at)
40 ~ 0.03
I
0-"1 i~i ! Ii !!I I
3 5 10 30 50 100 300 500 1000 1 3 5 10 30 50 100 300 500 1000

10 (mA). COLLECIOR CURRENT Ie (mA), COLLECI"OR CURRENT

1.6
~=~
1.4 5000 f----l. Ta_25"C
3000 f----2. ·Single pulse
!
~ 1.2
I Illil i ' Ii
f 1.0 ·2ooms
~
a: DB ~ ,ItT
I I~
,I
-
:1 1
: ,
~ 0.6 [I :1
Go 0.4
0.2
o
o
_.
I
50
"" ""
T. (0C) AMBIENT TEMPEAATURE
I""
100 150
50
30
10
3 5 10
DC
30 50
,i
'III
VCE (V), COLLECTOR-EMfTTER VOLTAGE

".
100
I
300
ill

KS'C2340 NPN EPITAXIAL SILICON TRANSISTOR
COLOR TV CHROMA OUTPUT

• Coliector·Base Voltage Veso =35OV TO-92L
• Current Galn·Bandwldth Product fT =50MHz (l\'p)
,ABSOLUTE MAXIM,UM RATINGS (Ta =25°C)
Collector-Base Voltage " VeBo 350 V

Col,lector-Emitter Voltage Veeo 350 V
Emi~er-Base Voltage VeBo 7 V
Collector Dissipation' , Pc 1 W
'1. Emitter 2. Collector 3. Base
Characteristic Symbol Test Conditions Min 'l\tp Max Unit
-
Collector-Base Breakdown Voltage BVeeo Ie =100pA, Ie =0 350 VI
Collector-Emitter Breakdown Voltage BVeEo le=5mA, IB=O 350 V
Emitter-Base Breakdown Voltage 'BVeeo Ie = -100pA, Ie =0 7 V
Collector. Cutoff Current leBO VeB =200V,le=0 0.1 'pA
DC Current Gain ' hFe Vee=10V,le=20mA 30 150
Collector-Emitter Saturation Voltage Vee(sat) le=10mA,IB=1mA 0,5 V
Current Gain Bandwidth Product h Vee=10V,lc=20mA 50 MHz
Output Capacitance Cob VeB =10V, Ie =0, 8 pF
f=1MHz
c8 SAM'SUNG SEMICONDUCToR
196

20
18
10-120
~1OO
IB- '00,.A f----'-
1
; 50
Ioi 80,.A B 30
I;
\I'T
I
II
~.!II
IBj80,.A
i 10
IB-40,.A
IBj2O,.A
o
o 20 40 80- 80 100 10 , 30 50 100
VCE M. COLl.ECIOR EMITTER Wl.T_ Ie (mAl. COLI.ECIOR CURRENT
COLLECTOR-EMmeR SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE
l00~~~
e--:-- _ _
50 _ f-1MHz-
30 ~-t 1- IE-O -
•.. -++++tIft+--t--HH-1-H-1t----+--I--l
10 30 50 100 30C 3 5 10 30 50 100

Ie (mAl. COLl.ECI'OR cu~ Vea M. COLI.ECIOR IABE Wl.TAGE
POWER DERATING
1.8
I -----
-- :
i --
"'-i"'-
I
--
0.2
o
o
"" 100
I""
T. ('C). AMBIENT TEMPERATURE
~ 150
c8 SAMSUNG SEMI~NDUCTOR
197
- . ,
NPN EPITAXIAL SILICQN TRANSISTOR
COLOR ,TV AUDIO OUTPUT

COLOR tv VERTICAL DEFLECFION OUTPUT 'TD-92L
Collector-Base Voltage '. i

Vcao 160 V
Collector Current Ie 1 A
Base Current Ie 0.5 A
Collector Dissipation Pc 900 roW
Junction Temperature Tj ·150 ·C
Storage Temperature Tstg -55"'150 ·C
1. Emitter 2. Conector 3. Base
Characteristic Symbol Test Condition Min Typ . Max Unit
Collector Cutoff Current Icee Vce=150V.IE=0 1 ,..A

Emitter Cutoff Current IEee VEB=6V. Ic=O 1 ,..A
Collector-Emitter Breakdown Voltag!l BVcEo ic =10mA.le·=0 160 V
DC Current Gain hFE VCE=5V. Ic=200mA 60 320
Collector-Emitter Saturation Voltage VCE (sat) Ic=500mA. IB=50mA 1.5 V
Base Emitter On Voltage VBl (on) VCE=5V. Ic=5mA 0.45 0.75 V
Current Gain-Bandwidth Product fr VCE=5V. Ic=200mA 20 100 MHz
Output Capacitance Cob VCB = 1 OV. IE=O. f= 1 MHz 20 pF
hFE CLASSIFICATION
hFE 60-120 100-200 160-320
,c8 SAMSUNG 'SEMICONDUCTOR . 198


1.0 1000
EMITTER COMMV '~=1OmA EMmER COMMON
T.=2SoC
500
-
lL
/ ./V" ;'" ..or,::: mA
.... 0.8 300
v~-',b~
~
~
8" 0.6 1/
IJ /
V / . / V"
../ / ...... ~
,/,/1.0--
- r·mj
I'R 3mA
Z
C
...
CI 100
~
Ii
8
50
30
I---
"'I'N-
Vel -sy
0
U o. 'I ~ ~ ~
11'1 25mA g
.1
i
j 'h ~ IR""'2mA 10
~ iA=1.5mA
0.2
v~ le-i mA
IR-15mA 1
02 0.' 0.6 08 10 10 30 50 100 300 500 1000
V.,.(Vl. COLLECTOR-EMITTER VOLTAGE IclmA). COLLECTOR CURRENT
I
1000 10
MI
~:f
'''UMMON'=
25t>C = 5
'oR CUMMUN
T.-25°C
500
w
3
300 ~ 0
~ VcE""'0V Z 01
"... ........... ~
Z
W
§ 100 '\ i""o" .\. ili
~
005
003
'10 10
1cI1s-5
U
g ~
50 Vee 5V- ~~
.1 ! 00 1
30 ~
VcE =1V >0.005
0.003
10
40 50 100 300 500 1000 3000
0.001 _.
1 3 5 10 30 50 100 3005001000
IclmA). COLLECTOR CURRENT IclmA~ COLLECTOR CURRENT
BAS&£MITTER ON VOLTAGE CURRENT GAIN-IIANDWIDTH PRODUCT

1.0
EMIl'rER COMM6N
1cI1s-1O I
0.8
II
Ii
I
u 0.6
"e I
~0 I
U 0.'
~ I
0.2 I
~
0.2 0.' 0.6 ,0.8 1.0 3 5 10 30 50 100 300500 1000
V.. (V). BASE-EMITTER VOLTAGE IclmA). COLLECTOR CURRENT

,KSC2383 NPN·EPITAXIAL SILICON TRANSISTOR
COLLECTOR OUTPUT CAPACITANCE SAFE OPERATII\IG AREA

100 10
MnTERtCM
-1MH<
500 a=26°C 3.0 r-k MAX. ~PuIse
300
1.0 U ~~ l
~ !5 0.5 ~
=
1QO
~ .~ 03 ~~1t"h "
'~
f ~o
~ ~
",
--
C 30 0.1
j ao""''?.so
'
~
0.05
.... 8003
B 10
~
C
Jl o.oo 1
0005 ~
::;
0.003 @
3 5 10 30 50 100· 300 500 1000

000 1
3 5 10 30 50 100
If 300 500 1000
V.oM. COLlECTOfI.IIASE VOUAGE VcdV\, COLLECTOR-EMITTER VOLTAGE
'cR~AMSUNG
."
SEMICONDUCTOR 200
,
• I
MEDIUM POWER AMPLIFIER

LOW SATURATION TO·92L
• VCE (sat)=O.5V (lc=2A, 1.=50mA)
Coliector·Base Voltage VCBO 30 V

Coliector·Emitter Voltage VeEs 30 V
Coliector·Emitter Voltage . VeEO 10 V
Collector Current (DC) Ie 2 A
'Collector Current (Pulse) Ic 5 A
Base Current IB 0.5 A
Collector Dissipation Pc 900 mW 1. Emitter 2. Collector 3. Base
• PW:;;10ms, Duty Cycle~30%
ELECTRICAL CHARACTERISTICS (Ta = 25 0 C)
Collector Cutoff Current leBO VcB =30V, IE=O 100 nA

Emitter Cutoff Current lEBO VEB =6V, 1c=0 100 nA
Coliector·Emitter Breakdown Voltage BVeEo le=10mA,IB=0 10 V
Emitter Base Breakdown Voltage BVEBO IE=1mA, le=O 6 V
DC Current Gain hFEl YCE=1V, Ic=0.5A . 140 600
hFE2 VCE=1V,lc=2A 70 200
Collector Emitter Saturation Voltage VCE (sat) Ic=2A, IB=50mA 0.2 0.5 V
Base Emitter On Voltag!'l VBE (on) VcE =1V, Ic=2A 0.86 1.5 V
Current Gain Bandwidth Product fr VcE=1V, Ic=0.5A 150 MHz
Output Capacitance Cob VcB=10V, IE=O, f=1MHz 27 pF
Classification A B C 0
hFE (1 ) 140-240 200-330 300-450 420-600

KSC2500
..,. 'r"
NPNEPItAXIAI. SILICON TRANSISTOR
• • . ' , . , . . " r, , , , ' " .' , ~

5 10000
1a=50mA EMIlTEA COMMON EMITIER COMMON
I
Ta=25 D C
- ~1e""40m 5000
Vc:t.- 1V
4
I
P'B-3OmA 3000
la=2 mA ~1000
3 /
/1--"" i5 500
B
0:
300
2
~-1 mA g
'/' i 100
1
18 5mA 50
0
~, "
10
.1 001 0030.05 0.1 0.30.5 3 5 10
Vce(V), COLLECTOR-EMITTER VOLTAGE IdA~ COLLECTOR CURRENT
BASE-EMITTER ON VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE

5
EMITIER COMMON
VCE-1V
,I 1
MInER'COMMON
lei'" 40
5
4
3
.I 'L
3
I 1
V
2 11 5
.J....-"""
1 /
II
0.2 0.4
l/
0.6 0.8 10
0.0 1
0.040.05 0.' 0.3 0.5
V.. (V), BASE-EMITTER VOLTAGE IdA), COLLECTOR CURRENT

4. 0 0
3. 5 5. Or-- Ie AX. (Pulse)

1~
3.o 10M . eontinuous
0
5
~ "i-----'
0
0
r\. 5
3
~
Q
6
'I\.
'\ .1
o. 5
'\ 0.0 5
. 0·03
25 50 75 100 125
'\ 150 175 200 0.0 1
0.1 0.30.5 3 5 10 30 50 100
T.(·~ CASE TEMPERATURE Vce(V), COLLECTOR-EMITTER VOLTAGE
"x-,
c8
~"",."".
SAMSUNG SEMICONDUCTOR 202

KSC2669 NPN EPITAXIAL SILICON TRANSISTOR .
FM RADIO RF AMp, MIX, CONY, OSc, IF AMP

TO-925
• High Current Gain Bandwidth Product 'T =250MHz ~p) I
. I


~
Emitter-Base Voltage , VEBO 4 V

Charact8r1stic Symbol Test Condition Min typ Max Unit
Collector-Base Breakdown Voltage BVcso 'c =100pA,IE=0 35 V

Collector-Emitter Breakdown Voltage BVcEo Ic=5mA,le=0 30 V
Emitter-Base Breakdown Voltage BVESO IE =- 10pA, Ic =0 4 V
Collector Cut-off Current ICBO Vce=3OV,IE=0 0.1 pA
DC Current Gain hFE VCE=12V,lc=2mA 40 240
Base-Emitter On Voltage Vee(on) VCE=fN,lc=1mA 0.65 0.70 0.75 V
Collector-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=1mA 0.1 0.4 V
Current Gain-Bandwidth Product fr VcE =10V, Ic=1mA 100 250 MHz
Output CapaCitance Cob Vce =1OV,IE=0 2.0 3.2 pF
f=1MHz
hFE CLASSIFICATION
hFE 40-80 70-140 120-240
c8 SAMSUNG SEMICONDUc:roR 203

'KSC2669 .NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERIsTIC BASE-EMITTER ON VOLTAGE

.32
28
r--v< _I""
--
o 1 3 4· 6 7 8 9 10
V
o.a o.a 1.0 1.2
Veo (y), COLLECTOJI.EMmERWLTACIE Yea (y), _-EIIIi'TER VOLTAGE
I .
DC CURRENT GAIN CURRENT GAIN-ElANDWlDTH PAOOUCT
1000 1000
r- V _I Vce_1OV
.,.."'"
-- /
10 10
0.1 0.3 Q5 1 3 5 10 30 50 100 10
Ie (mA), COLLECIOR CURRENT Ie (mA), COLLECIOR CURRENT
COLLECroR-EIIITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE
10
I-- ie-lOla ~f:,I~Hz

IE_O
..........
,,/
VeE (
r--....
0.1 0.3 Q5 3510 10 30 50 100

Ie (mAl, COUI!ImIR CURIII!NT
c8 SAMSUNG ~EMICONDUcToR 204

LOW FREQUENCY· POWER AMPLIFIER

TO·925
• Complement to KSA 1150
• Collector Dissipation Pc = 300mW
Characteristic Symbol . Rating Unit

1. Emitter 2. Collector 3 Base
Characteristic Symbol Test Condition Min· Typ Max Unit

.. -
Collector-Base Breakdown Voltage BVeBO Ie =l00pA, IE =0 40 V
Collector-Emitter Breakdown Voltage BVceo le=10mA,le=0 20 V
Emitter-Base Breakdown Voltage BVEBO IE = -100pA, Ie =0 5 V
Collector Cut-off Current leeo Vce -25V,l e =0 0.1 pA
Emitter Cut-off Current lEBO VEe =:N. Ie =0 0.1 pA
DC Current Gain hFE VCE=1V,le=0.1A 40 400
Collector-Emitter Saturation Voltage VCE (sat) Ic =O.SA, Ie =O.OSA 0.18 0.4 V
hFE CLASSIFICATION
hFE 40-80 70-140 120-240 200-400

,·,KSC2710
::; ' \ ' " NPNEPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC BASE-EMlTTER,ON VOLTAGE

500 '00
lB.lDmA
-----
450
IV -
50
400
...- IIB.,L 30
t- rVCE-'V
I
I.--
j.....-'e .. 1.6mA
I
Ie-lAmA
I 1
y~ IB-,.2ImA
. ~ ,.
'/' IB~,bmA ,
le_O.8mA
le ... O.6mA
'00
1/
'B~0.4ml- r - -
I I
50
o
ro.i- r--
G., I
o 3 4 9 '0 o 0.2 os os 1.0 1.2
VeE (y), COUEClOfl.EMtTTER.VOLTAGE -(y), _&allTTER~

8ASE-EMmER SATURATION VOLTAGE
1000 _ _ _
500 -f-Vceo1V
300
I:
i
3 5 10 30 50 100 300 500 1000
Ie (mA), COUECI'OII CURMNT Ie (mA), COUECI'OII CUIIIIEHT

'00
50 1----~-'MHz...
le.O
30
r-- t---
,
10 30 50 100
206
. . .
FM RADIO AMP, MIX, CONY OSC, IF AMP

• High Power Gain Gpe=30dB 80T:23

Emitter-Base Voltage VEoo 4 V
Collector Current Ic . 50 rnA
Characteristic Symbol Test Condition . Min Typ Max Unit
Collector Cutoff Current Icoo Vca=35V, IE=O 0.1 ,..A

Emitter Cutoff Current IEoo VEa =4V, Ic=O 1 "A
DC Current Gain hFE VcE =12V, Ic=2mA 40 240
. Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA,la=1mA 0.4 V
Base-Emitter Saturation Vsr. (sat) Ic=10mA, ia=1mA 1.0 V
Current Gain-Bandwidth Product fr Ic=1mA, VcE =10V 100 400 MHz
Output Capacitance Cob Vca =10V,IE=0 2. 3.2 pF
f=1MHz
Power Gain Gpe VCE"'6V,IE=-1mA 27 30 33 dB
f=10.7MHz
. Marking
hFE CLASSIFICATION
hFE . 40-80 70-140 120-240
hFe grade
c8 SAMSUNG SEMICONDU~R
.. 207
KSC2715·· . NPN EPITAXIAL SILICON TRANSISTOR
STAnc CHARACI'ERISTIC . BASE.EMITTER ON VOLTAGE

10 32
18-110""
I
• 1a_8OpA 28
r---v' -I••
8
7
Ie-~
8
-~
I
Ie-!OpA-
I
'.-4OpA-
I
18_3OpA-
.I
2 '.-2OpA-
1
0.
0.12345878810
'·-r-I
G.4 o.e
V Q8 tAl 1.2
Vel! M. COLLECJOR.EIIITTER WLT_

-M.~-
DC CURRENT GAIN CURRENT GAIN-BANDWIImt PRODUCT
1000 1000
V",,-I2V VCE_1OV
f--
....... r--
,... V
-- ~
30
10 10
0.1 G.3 G.5 1 3510 3050 100. I 10 30
1e(mA). COUECIORCWMNT
BASE-EMITTER SATURATION VOt.TAGE
. coueCTOR-EMITTER SATURATION VOLTAGE
10.
-=
•
f:= r-
ie-tOle
-- •
...LJ...
I
VCl!I
V
I:,
3 I
..........
...
i'...... .....
1--
0.
0.1 G.3 G.5 3 5 10. 3510 30 50 .100

KSC2734 NPN EPITAXIAL SILICON TRANSISTOR,
MIXER, OSC. FOR UHF TV TUNER

SOT·23
High 'T: 3.5GHz (TVP)
Characteristic Symbol Rating . Unit

Collector Current (DC) . Ic 50 rnA
Storage Temperature Tstg -55"'125 ·C
1 Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Collector-Base Breakdown Voltage BVcBO Ic=10",A.IE=0 20 V

Collector-Emitter Breakdown Voltage BVcEo Ic=lmA. RBE=oo 12 V
Emitter-Base Breakdown Voltage BVEBO IE= 1 O",A. Ic=O 3 V
Collector Cutoff Current ICBO VcB :=15V. IE=O 700 nA
DC Current Gain hFE VCE=10V.lc=5mA 20 90 200
Collector Emitter Saturation Voltage VCE(sat) Ic=10mA.IB=5mA 0.7 V
Current Gain Bandwidth Product fr VCE = 1 OV. Ic= lOrnA . 1.4 3.5 GHz
Output CapaCitance Cob VCB='OV. IE=O. f=IMHz 0.9 1.5 pF

kS,(:2734
POWER DERATING DC CURRENT GAIN

200 200
VeE-tOV
175
160
150
i~ 125
\\ ~
"!iii 120
1\ w
ffi
~
100
75
\
0:
0:
""
""Ii ,80 ~ - ~bo
~
.. 50
'\\ '"
40
25
r...
25 50 75 100
\
125 150 175 200
o
1 5 10 20 50 100
Tc(·C), CASE TEMPERATURE 1,(mA), COLLECTOR CURRENT
CURRENT GAIN BANDWIDTH, PRODUCT COLLECTOR OUTPUT CAPACITANCE
20
VCE""10V f=l,MHz
18
V l""-
i'..
II l'
/
1/
--
o o
1 10 20 50 100 1 10 20 50 100
IdmA), COLLECTOR CURRENT VC8(V), COLLECTOR-BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE NOISE FIGURE vs. COLLECTOR CURRENT

2,0 0
f=1MHz Vcc=BV
f"i'"90DMHz
16 6
V
"
V
;'52 t'-.. V
~
l' b. V
"
J
0.8
4
,-
o
1 5 10 20 50 100 5 ,
V,o(V), COLLECTOR·BASE VOLTAGE Ic(mA), COLLECTOR CURRENT
c8SAMSUNG SEMICONDUCTOR 210.

OSCILLATING OUTPUT VOLTAGE ••. OSCILLATING OUTPUT VOLTAGE v•.

COLLECTOR CURRENT . SUPPLY VOLTAGE
200 200
-
Vcc=6V Ic-;5mA
f=930MHz f=930MHz
w
"~
< .... V "-
w
"~
<
0
"...
160
/ \.
0
"...
'60
/' ...-
"~ 120 / \
'
."... 120 L
0"
i/ "0 /
";:: :i"
Z z
I
J
~
ao
0
1/ ..
:I
U
0
80
;;
~ 40 / E 40
J J
6 . .,' 8 '0 '0
1,(mAI. COLLECTOR CIIJ'IRENT Vcc(V), SUPPLY VOLTAGE
2ND I.M.DISTORTION vs. 3RD I.M. DISTORTION v••

COLLECTOR CURRENT COLLECTOR CURRENT
50 70
Vcc=10V Vcc=10V
Z
0
;::
II:
...
0
~
40
30
II
V
V
Z
0
~
...
...0
Q
60
50
VV
1/
..... I---
-
.... .:-10-
~ / ~ //
Ii
~. 20
I off
~ 40
'/
~ "~ IIJ
"~ ~ i/
'0 30
o 20
8 12 16 20 o 8 . 12 16 20
lo(mAI. COLLECTOR CURRENT Ic(mA}, COLLECTOR CURRENT
CONVERSION GAIN ••. COLLECTOR CURRENT POWER GAIN vs. FREQUENCY
20
Vcc=6V
'6
f=9QOMHz
~
"
..
'6
/ -'" .". z
:;;
'2
--
Z
2 '2
I " I .........
'" .~
II:
W
"0
Z
'\.
~
u
if
,." ~
U
I
'" -4 I
4 6 10 400 500 600 700 800 .900
1,(mA~ COLLECTOR CURRENT f(MHz), 'FREQUENCY"
c8SAMSUNG SEMICON~UCTOR
"KSG2755, NPNEPIJAXIAL'SILICON TRANSISTOR
RF AMp, FOR VHF TV TUNER

• LOW ,NF, HIGH Gpe 50T-23
• NF=2,OdB lYP- Gpe=23dB Typ. (f=200MHz)
• FORWARD AGC CAPABILITY TO 30 dB
Collector-Base Voltage' Vcso 30 V

Emitter-BasI;! Voltage Vem 5 V
Collector Current'(DC) ~ 20 mA
Junction Temperature Tj, 150 ,oC
Collector Cutoff, Current Icso Vcs=20V, le=O 0.1 /AA

DC Current Gain hFE Vce=10V,lc=3mA 60 1f!0 240
Current Gain Bandwidth Product fT Vce ';"1OV, 1c=-3mA 400 600 MHz
Reverse Transfer Capacitance Cre f=1MHz, VcB=10V, le=O 0.3 0.5 ' pF
Power Gain Gpe f=200MHz, Ic=3mA 20 23 dB
AGC Current IAGe f;=200MHz -10 -12 mA
Ie of Gpe -30dB
Noise Figure NF f=200MHz,lc=3mA 2.0 3.0 dB
hFE CLASSIFICATION Marking
H1 0
flFE 60-120 90-180 120-240
c8 SAMSUNG ,SE~ICONDUcrOR 212

10 hFE-1c CHARACTERISTIC
-
Ie-VeE CHARACTERISTIC
J~~ 1000_",_
500 ~ =1OV
~k--"~..... B:
J .,-'
Ih ~~ ~~ 200~-+-++++H~--+-~+H~r--+-+++~~
h ~ . /~
'" -
1s-6O.,A
iV/.V ~ 10- 1'=1--

.....
~~
IB=40~A
g 20
~ -' "..- 1 10 _ _
r/ 1s=12O.,A
~"
V"'(YI. COLLECTOMMITTER VOLTAGE'

, 8 10 0.1 0.2 0.5

10 20 50 100
I
VCE (satHe CHARACTERISTIC VIE (satHe CHARACTERlsnc
1000a
5000
~=1O'1
10000~EIIa.~ 10,1
~ ~5000~-+~~H+~-+-++++HH-~-+~4+~
j!!
:! 200a
g
S
~ 1000 / Z 2000 1--+-++lM+ttI-~+---H++tltt--+-+--H++ftl
~
500
ali ~
200
- !'OO0"I~il§11
i:!
:i
~
! 100 !500E
! 50
~
!
.>
20
10 01 0.2 0.5 10 20 50 100
,1c(mA~ COLLECTOR CURRENT Ie (mA~ COLLECTOR CURRENT
Ir-IE CHARACTERISTIC C""VCB CH,ARACTERISllC
t; 1°oom1aIlDII
__
~ 500~-+-++44+~~ +-+4~~~-+~+++H~
VCE 10V f=1JlMHz
J,,=0mA
i 200 1--+-++H+'Ht--+--t-l-H-N-fI--+-+--H++ftl
!
'i~ 100~;ltmll'll
"-
50E .....
IB 20r--r-rrH~r--r~~~--~+++r~ .......... I'-
0,
10 ,20 40 60 100
I,,(mA). EMITTER CURRENT VcaCYi. COLLECTOA-BASEVOLTAOE

KSC2765
. .
," ',"
MPH EPITAXIAL SILICON TRANSISTOR
P...T. CHARACTERISTIC yie-' CHRACTERISTIC

200 60
i
\ U
w
Z
40
20
Faa
/c:::L. 5mA
200 30~'00MHx-
f-100MHz
IS
T
C
"i\. ....o.
w
1;1
MHz MHz MHz" . 20ott1Hz
\ iii
it
e· 300M~Z\ "
\ - ~
I -20
I
" I\. -40

.00T
\
Yld-gte+j:lte
Vce-1°V
a -60
25 50 75 100 12. 150 175 200 o 20 40 60 60 100 120
T,j"C), AMBIENT TEMPERATURE gJo(mS~ CONDUCTANCE

';',
yro-f CHRACTERISYIC yte-f CHRACTERISTIC
.'
a
~~MHZ
g ~ -25
I ,
300MHz
200MHz
&-0.8
I I'- f~ 'l/mA
1c=10mA
100MHz
I
!of -50
./
i - 1 . 2 1 - - - + - - - + - - - + - - - + "......--1
400MHz
Ii
e
1-75 r----- 400MHz -
............. 5mA
1DOMHz
/'
300MHr--
-1.6t---+-~-l---+-----t-----t 200MHz
-100
yre-gre+jbre
yfe=gfe+Jbfe
VCE.=10V
-2.~LO-.,---0L...--.J0.-,---0.J,.2---0J..-3--....
0.4 -12 5
VCE =I° V
50 25 25 50 75 100
..emS), CONDUCTANCE gfo(m~ COIIDUCTANCE

yoe-f CHRACTERISTIC Ope-Ie, NF-Ic CHRAPTERISTIC
20 5
yoe ..~+jboe
Vee-l0V 18 30
Goo·'f- 20bMHZ
Vc~'l0 ;,;=
RE-2400
16 25
V Goo
t"-.......
114 a; 20
Ii
~
3
2
P V
30QMHz-
400MHz
G:.12
~ 10
!il
~ 8
~
o. 10
,
15
5
" '\.
/ ~
7~ ./~OOMHZ i \
V "
V \
1
a
11
0.25 0.5
....f-10T HZ
10m!,
0.75 1.0
-10
5
-1 5
- NF ./ NF: f-2DOMHz
• Vc=10V-
Ao150~
10
gao(mS), CONDUCTANCE ic(mA), COLLECTOR CURRENT
cS'SAMSUNG SEMICONDUCTOR 214

KSC2755 . NPN EPITAXIAL SIUCON, TRANSistoR
POWER GAIN AND NOISE FIGURE TEST
Vc(V) 10V

' . . '. ' .. ~ .
1(8.C2156 . NPN EPITAXlALSIUCON. TRANSISTOR
MIXER FOR VHF TV TUNER

• HIGH Gce flYp. 23dB) 501-23
ABSOLUTE MAXIMUM RATINGS (Ta=25. oC)

CoUeclor Current Ic 30 mA
Junction Temperature Ti. 150 °C
1. Base 2. Emitter 3. Col/ector
ELECTRICAL CHARACTERISTICS (Ta=25 °C)
Collector Cutoff Current leBO Vce=20V, IE=O 0.1 fJA

DC Current Gain hFE Vce=10V,lc=5mA 60 120 440
Collector Emitter Saturation Voltage VCE (sat) le=1.0mA,le=1mA 0.5 V
Current Gain Bandwidth Product fr VCE =10V,IE=-5mA 500 850 MHz
Reverse Transfer Capacitance Cre Vce=10V, IE=O, f=1MHz 0.35 0.5 pF
Conversion Gain Gee Vce=10V,le=3mA 15 23 dB
fRF =200MHz,IF =58MHz
Noise Figure NF veE=10V,le=3mA 6.5 dB
fRF =200MHz, IF =58MHz
Marking
hFE CLASSIFICATION
Classification R Q y
H20
hFE 60-120 90-180 120-240
hFE grade

Ic-VCE CHARACTERISTIC hFE-lc CHARACTERISTIC

10 1000
~
~ 500
V =1DV
I"I - ~.~
",.. ~ I -
Ir ~ I -
- 18==70,"",
\a""60~
-
-
~
CO
...
200
100 1=---'
-
:,...-r- 1.~50"" Z 50
"'
0:
0:
:>
~ IB=4o,..A U
U
20
II'" ..J30"" "i 10
1.~20""
le=1JJAA, r---
1
12 16 20 01 0.2 0.5 2. 10 20 50 100
Vco(V), COLLECTOR-EMITTER VOLTAGE lc(mAl, COLLECTOR CURRENT
•
V.,.{sal), V.,.{sal)-lc CHARACTERISTIC tr-Io CHARACTERISTIC
10000 10000
Ie 10'" VCE=10V
~
i! 2000
5000
1
12000
5000
~Z 1000 ~ 1000
~
:i
~
500 I
z
500
~ 200 ~ 200 \
i
- 100
V i
"'0:0: 100
!l 50
:>
u
50
"If
:I:
20 ~ 20
10 10
0.1 0.2 0.5 10 20 50 100 0.1-0.2 -0.5 -5 10 20 -50 100
Ie (mAl, COLLECTOR CURRENT lo(mA~ EMITTER CURRENT
Cra-Yea CHARACTERISTIC P..T. CHARACTERISTIC

0 200
f 1.0MHz
g' 5.0
13 2. 0 0
::
c::i 1. 0 1\
; 05
0
"1\
~ O. 2 r.... \
I
~
~
1
0
fO 5
"1\
\
0.02
0.0 1
0.1 0.2 0.5' 10 20 50 100 25 50 75 100 125 150 175 200
Vc,(~ COLLECTOR-IIASE VOLTAGE T~·C~ AMBIENT TEMPERATURE
c8 SAMSUNti SE~ICONDI,JCTOR 217

KSC21S6 NF!N EPITAXIAL SILICON TRANSISTOR
yi....f CHRACTERlsnc yre-f CH!!ACTERISTIC

60
Y18=~I8+J;:tie ",,-goo+jbe
VCE=10V Vce=1OV
50 I
-o.21----.\---.\---+----}-,----l
I,
I
1-100
200MHz MHz:
I
300
400MHz
I~'
f -o.ol---l-~rl-,,--+---J-,----l
MH~ 200MHz 3m;-.. 10mA
J
L.~
MHz
'=400MHz
5mA 'OOMHz
-0.a~--+_--+_-3OI'""''''''''-+----I
10 1c-3mA .
10 20 30 40 50 00
-,.~LO.-2--l--.....,l----,..,...-.....,..,...-~o.a
glo(mS~ CONDUCTANCE alO{mS), CONOOCTANCE
....,. yte-f CHRACTERISTIC yoe-f CHRACTERI~TIC
t,:'" 30
yfe=d..+J>Ie. yoe-goo+jboe
Vce-fOV
Vee=10V
~.
Ic·'i3InA
-30
i j' ,
;;,:A I,
\
\
~ -60
l( \
al , ,
, I \
.\
f -90
/ ,
\
I . 1=400 I \
~/
MHz I \
-120
30rMHz'~
I
~10mA
100MHz
200MHz
-150
-50 o 50 ,00 150 200 260 0.2 0.4 0.0 o.a 1.0
aro(mS), CONDUCTANCE gooCmS~ CONDUCTANCE
NF-OSC LEVEL, Ck,e-OSC LEVEL Gce-Ic CHRACTERlsnc
,5 5
l",l~~Hz, l89d~Vl5~O
ILocal-258M,Hz
0
/
"...,
,
I \
~ \ ,/~
~ I \
! I
" ' 0 <.> 15 - -
\ /
/
" i o I
I \
\
I .' Jt V
+~
K II
8 '
!
I
~
V I\. / ao de,.Vl500 1,\

~
",,-200MHz,
fL.oca=258MHz. 105 dB,N/500
~
5
at F 0IUr;tjT L~L
I
90 .100 110 o 10
(dll!AV/501l), OSC LEVEL Iclm~ COLLECT~R CImRENT
" c8SAMSUNG SEMICONDUCTOR 21.8

KSC2757, NPN EPITAXIAL SILICON TRANSISTOR
MIXER OSCILLATOR FOR VHF TUNER

SOT-23
HIGH IT (IT=1100MHz Typ.)
Collector-Base Voltage Vcro 30 V

Emitter-Base Voltage VfB() 5 V
Junction Temperature Tj 150 ~C
Storage Temperature T8tg -55-150 'C
ELECTRICAL CHARACTE~ISTICS (Ta = 25°C)
Collector Cutoff Current ICBO VCB=12V, IE=O 0.1 ,..A

DC Current Gain hFE VCE = 1OV, 1e=5mA 60 120 240
Collector Emitter Saturation Voltage VCE (sat) Ic=10mA,IB='mA 0.5 V
Current Gain Bandwidth Product h VcE =10V,IE=-5mA 800 1100 MHz
Output Capacitance Cob f=1MHz, VcB=10V 1.5 pF
IE=O
Collector Base Time Constant CC'rbb' f=31.9MHz, VCE=10V 10 15 ps
IE=-5mA
hFE CLASSIFICATION Marking
H30
t!,.E 60-120 90-180 120-240
'hFE grade

KSC2757 NPN EPITAXIAL SILICON TRANSISTOR.
Ie-Vee CHARA<iTERISTIC lin-ie CHARACTERISTIC

20
'I- VIa~180,.A 1000 _ _ _
500
I! ~1OV
l.,.....- ~=1601iA
16
L~ j......o-'
I ~ ~ ~1a::2~,.A
IB"'14~
J
~ 12
f..
J... ~ I--
-f-
.-
Is= 1
-
--
~
001
IfI·-801JA
,..-. Is-SrJiA
rlllill
g
I ~I. 4r. . 1 10
_ _
10
-~,.A
15 20 25 0.1 02 0.5 10 20 50 100
V,.(1I), COLLECTOR-EMITTER VOLTAGE Ic:(mA~ COLLECTOR CURRENT
VeE (satHe 'CH~~~CTERISTIC 'lIE. (sat)-le CHARACTERISTIC

10000
Ie 10"e
5000
~
~ 2000
>
z1000
~
~ 500
ill 200
~ 1'00
Il 50
.. ?O
10
0.2 0.5 )0 20 50 100 0.1 0.2 0.5 10 20 50 100
1c:(mA), COLLECTOR CURRENT Ie (mA~ COLLECTOR CURRENT
"..1. CHARACTERISTIC Cob-Vea CHARACTERiStiC

10000 100
I! ,- 10V f-=1.0 MHz
1
~~
0
5000
r z~
0
ooo ;!
1000 0
~
·500 I...
::>
5
200 I!:
I
::>
0
r-r-.
i
100 1
c.>
I o. 5
50
20 o. 2
10 o. 1
-0.1 0.2 0.5 5 -10 -20 -50 -100 0.1 0.2 0.5 10 20 50
l.emAl. EMITTER CURRENT Vco(~ COLLECTOR-IIASE VOLTAGE

KSC2757 NPN .EPITAXIAL SILICON TRANSISTOR
P..T. CHARACTERISTIC INPUT ADMITTANCE (ylb) vs. FREQUENCY

400 0
",,-J..+Jbib
Vca=10V
350
f-1000MHz
I
800
0
1-i
-40
2
a ------I aoo
400
W
1
100
\ Ic"'3mA
K \J
0
0 I" .........
'-
I-a
-60
0
~
I
\
\
~
0
'"
10mA
0 -1do
200 o 40 80 120 160 200 240
T,(·C~ AMBIENT TEMPERATURE glo(mS~ CONDUCTANCE
FORWARD TRANSFER ADMITTANCE (ytb)

vs. FREQUENCY
'50~~-r~~~----r----r----'-----'
-1.5
'25~---+----~----r----+----~----i
~ ,00~~-+--~~~--~---+----4---~ I_M
. ti·
WI
iil
75
1- 4 5
.
} 5°r--t---";D-~::--r:-~b"'Tl ·-8.01-----+-----+-----+-----j------i
25~---+----~----r----+--
~~'2~5~--~'OO~----~75~---~50~--~----~---J25
glll(mS~ CONDUCTANCE
9.o(mS), CONDUCTANCE
OUTPUT ADMITTANCE (yob) vs. FREQUENCY

'O~----~----~-----r~--~~----'
,I
OB , 2 , 6 2 O.
9ooImS~ CONDUCTANCE

"
NPN' EPITAXIAL'SILICON ,TRANSISttiA
RF. MIXER FOR UHF TUNER

• HIGH POWER GAIN TYP. 17dB S0T-23
• ,LOW NFTVP. 2.8dB
Coliector·Base Voltage Vcoo 30 V

Collector-i;:mitter Voltage VCEO 25 V
Emitter-Base Voltage VEoo 4, V
Collector Current (DC) Ic 20 rnA
Collector Oissipation Pc . 150 mW
1, Base 2, EmiU~r 3, CoHeetor
ELECTRICAL CHARACTERISTICS (Ta=25 Q C)
Collector Cutoff Current Icoo VCB==25V. IE==O 0.1 fAA

DC Current Gain hFE VeE== 1 OV. 1f>==3mA 60 120 240
Current;Gain Bandwidth Product fr VCE==10V. IE==-3mA 750 ,1000 MHz
Output Capacitance Cob f==1MHz. VcB=10V. IE=O 0.6 0.8 pF
Noise Figure NF VcB==10V.IE==-3mA 2.8 4.5 dB
f==900MHz' 1
Power Gain Gpb VCB=10V. IE==-3mA. 14, 17 dB
f==900MHz,
AGC Current IAGe Gpq AGC=IE 0.1 Gpb-30dB -:8 -11 mA
,
Marking
c8 SAMSUNG SEMICONDUcrO~ 222

,I;CSC2758 NPN EPITAXIAL SILICON TRANSISTOR
Ic-Vce CHARACTERISTIC hFe-Ic CHARACTERISTIC

1000
500
200
IE
II! z
..ili~
100
!i
u
I
50
III:>
u
20
u 1t
i \
I 10
VceM. COLlECTOR-EMlTTER VOLTAGE 1dmA), COLLECTOR CURRENT
VC£(. .t~c CHARACTERISTIC VBEl..t~c CHARACTERISTIC

10000 10000
\c=10·le Ie 10·18
5000
20 0
19
0.1 0.2. 0.5 10 20 50 100
Ic(mA~ COLlECTOR CURRENT IdmA/, COLLECTOR CURRENT
frlE CHARACTERISTIC Cob-Yea CHARACTERISTIC

0
1-1.
0.02
0.01
0.1 02 0.5 2 3 6 10 20 30 60 ,00
lEImA), EMITTER CURRENT Vco(V), COLLECTOIWIASE VOLTAGE
223
KSC2758 ,NPN EPITAXIAL SILICON TRANSISTOR
Po-To CHARACTERISTIC
INPUT ADMlnANCE va. FREQUENCY
30c
-20
.......
r"- r-....
,
I
f
I
-40
-60
........
-eo
'f'..
........
......... -100
, 25 50 75 100 125 0 eo 120 160 200
Tal'C), AMBIENT TEMPERATURE glb(mS~ CONDUCTANCE
REVERSE TRANSFER ADMlnANCE FORWARD TRANSFER ADMITTANCE

or-~VL~F~RE~Q~U~E~N~C~Y~__~~____~__~ -::;:::p__;::;:c.....,;~i:'"1
100 ,...;,;VS;;.'.;,.FrRE;;;.Q;;;.U;.;E;;;.N;.;CrY__
-1,5 t----j------"=:'=-T-"-'=---+-..".~
2
1- 30
f -46 r - - - j - - - t - - - t - - - j - - - - I
I
-6,0t-----T---r_---j-----j-----j
-7.:L,~,0---..,01..,8,....---.JOI..,.,....---.JO-4----..I0-,2--....I -~2~O~0---~15~0,....---~1oo~---~~~--~--~50
.'~. 't,'.'
g.o(mS~ CONDUCTANCE g,.(mSI. CONDUCTANCE
INPUT AND OUTPUT REFLECTION COEFACIENT
OUTPUT ADMlnANCE va. FREQUENCY
.... FREQUENCY
10r-----,------;-----T------r-----,
yob=gob+J)gb
Vcs"",1QV
8t-----4-----~----_+------r_-----j
.~
i
J
gob(mS~ CONDUCTANCE
c8 SAMSUNG SEMICONDliCTOR 224

FORWARD INSERTION GAIN ... FREQUENCY REVERSE INSERTION GAIN ... FREQUENCY
90'
180'1---+-t---+-E
II!
a !
5
.
lsl--~~---+--~~+-+----+---;
'0~--4-----+----~--4----+---;
900 MHz Gpb, NF TEST CIRCUIT
•
Ii:
I
4
I S
rI i 0
-sl---4--
-101~---+---+----t----4----f~~
-lSiL-__~__~____~__~__~~~
o -2 -4 -6
l,(mA), EMITTER CURRENT
..
.cR SAMSUNG SEMICONDUCTOR
.
225
KSC2159 t t
. 't ) :NPN:EPlTAXIAL :SILICON TRANSISTOR·
MIXER,OSCILLATOR FOR UHF TUNER·

S0T-23
. ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic Symbol Rating ·Unit

Storag·e Temperature Tstg -55-150 ~C
Collector Cutoff Current ICBO VCB= 15V. IE=O 0.1 IJA

DC Current. Gain hFE VCE=10V.lc=5mA 40 100 180
Current Gain Bandwidth Product fr VCE=10V.lc=-5mA 1.5 2 GHz
Output Capacitance Cob VCB=10V. IE=O. f=1MHz 1 1.3 pF
Conversion Gain Gcb VcB =10V.IE=-5mA 10 12.5 dB
fAF =900MHz. fosc=935MHz
115dl3jl
Marking
hFE CLASSIFICATION
H6D
hFE 40-80' 60-120 90-180
hFE grade
.
t c8 SAMSUNG SEMICONDUCTOR
KSC2759 . NPN EPITAXIAL SILICON TRANSISTOR

20
.......
- \ ~~,lo,.A
-180
~ P;1.=',6cJ 1111
~
..... 160
Vc£-10V
6
PC~'50~W
14 0
I- ~
'~-lo,.A ~
2 la 10o"A
.. 120
V
l
I.=S'\"A
1
U 100
i.-"
B "
~=6~A 0
./
r .~
IB=4o,..A_
r--
'V I 0
"=2I"A- r-
0
12 16 20 10 30 50 100
V.,.(V). COLLECTOR-EMlnER VOLTAGE IdmA~ COLLECTOR CURRENT
•
BASE-EMITTER ON VOLTAGE POWER DERATING
20 200
16
IB ~ 150
\,
a: 12
i
IJ a:
i
100 I\.
\
4
i 50 1\,
1\
J
0.2 0.6
/ .06 1.0 25 50 75 100
\ 125 150 175 200
Vae(V). BASE-EMITTER VOLTAGE T.('C). AMBIENT TEMPERATURE.
COLLECTOR. OUTPUT CAPACITANCE CURRI;NT GAIN - BANDWIOTH PRODUCT

10 10000
f 1MHz
t; Vee= 10V
1
S3000
500
0
~
1
~ , ~
1100 0
1/
VV
"!Z
5
03
1
'Ii 300
50
0
J
1 100
'0 30 50 100 :-1 -3 -5 10 - 30 - 50 - 100
Vca(V). COLLECTOR-BASE VOLTAGE IdmA~ EMITTER CURRENT
c8 SA~SUNG SEMICONDUCTOR '227

,KSC2:759, NPN EPITAXIA~ SILICON TRANSlsroFJ
INPUT ADMITTANCE (yib) REVERSE TRANSFER ADMITIANCE (Yfb)

¥s. FREQUENCY vs. FREQUENCY
0 3
--
;
~-3mA [ '
~ ... 40
V
",. , s!nA
'" ,
100 MHz
200MHz
~
4QOMHz~
"',
- ~,r«' ..... l><, ,
1000
'" , , , rnA
10
~~ ,.1
~- -- )- - )
MHz 600MHz
100OMH~
-60
'~ 1/.' ' -~ ---~-~
~C
' '
, 'amA IE~3mA
1- N
'20 f-MHz- 60u
MHz r----
4QOMHz
\.
/200MHz
MHz
-9
-160
VOE.-10V
Vce=1OV
-200 -1 2
a ~ M 1~ 1~ 200 240 -0.2 o 0.2 0,4 0.6 0,8
g/O(mS), CONDUCTANCE Qlll(mS~ CONDUCTANcE
FORWARD TRANSFER ADMITIANCE (yfb) OUTPUT ADMITIANCE (yob)

¥s. FREQUENCY vs. FREQUENCY
~r--------r---r--~---.----' 16r-----~------~------------,
Vce=10V
250~---'----~----+----1----~--~
200~---r----t----+--~t----+----i ..!i! 12
IE~3mA
400~
iii: 1501---+---+1"'-:~~[A~-----I
i / r, 200MHz .'
LL'
Hz
600 Hz
I 8
t
IE""'10mA / \ : .# 800t,1Hz
f! 100 1'-
'MHZ,"
\\, !II:I,. " , _-
I l .... ~\'.1:
100 / \ \ / r-
0~--~---4~,~~~~t----r---1
~;.I..,IV
t.J 3mA
~3~0~0----2~4~0----~18~0~~'~20~--_760~--~0~--~60 0.4 0.8 -1.2
g/O(mS), CONDUCTANCE goll(mS), CONDUCTANCE
51" Su Va I SaI,vs.1
180' t---t--;---ir-_±:
c8 SAMSUNG ~EMICONDUCTOR 228

Gcb VB. OSC LEVEL

25
RF\OOt.1~Z, 7JdBm';
local. 935MHz
Vce -,1DV
20
~
z
S! 15
.;'"
8 0
..... ~
V
! 5· L "
0
100 110 120
(dB,J500), OSC LEVEL
Gcb TEST CIRCUIT
150pF
f f lDDOpF
RF IN, 50U
Olr---__
+B(10V)
RF=900MHZ 75dBJoI
Local 935MHz 115 dB", L1L2 ~
IE=5mA
('f-J--~)I!-T mm
I. 19 mm
,

NPN EPITAXIAL,SILICON TRA~Slsroa

10-928
• Complen1ent to KSA1174
ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

Base Current IB 10 mA
Collector Dissipation Pc' 300 mW
Storage Temperature Tstg -55-.150 °C
ELECTRICAL CHARACTERISTICS (Ta ~25°C)
Characteristic Symbol Test COndition Min Typ Max Unit
Col,lector Cutoff Current ICBO VCB=120V.IE=0 50 nA

Emitter Cutoff Current lEBO VEB=5V. Ic=O 50 nA
DC Current Gain hFEl VCE=6V. Ic=0.1 mA 150 580
hFE2 VCE=6V. Ic= 1 mA 200 600 1200
Base Emitter On Voltage VBE (on) VCE=6V.lc=1mA 0.55 0.59 0.65 V
Collector Emitter Saturation Voltage VCE (sat) Ic=10mA.IB=1mA 0.07 0.3 V
Current Gain Bandwidth Product fr VcE =6V.IE=-1mA 50 110 MHz
Output Capacitance , Cob VCB=30V. IE=O 1.6 2.5 pF
f=1MHz
Noise Voltage NV . 25 40 mV
hFd2) CLASSIFICATION
Classification P F E U
hFE (2) 200-400 300-600 400-800 600-1200


10 10
I,
la=16j.1A
'/
" , la=1 4j.1A
.,.", ",-12""
I I
II" IB""14j.1A .".. II
_. -
L' ",.
I-
if!a: !J ~-12'" I-
Z
08
.,...,.. '" f.- f-""" "1'
0
1-
a:
:::>
u ~/ .... ~~'0'"
W
a:
a: ......
...... ...... 1".....0-- f.-
I--' IBIO 8"j
-r-r
:0
-- --
a: U 0.6
g
u IJ. ~ Ie a,..A
a:
g
1-
...... H'B-O,B"A
~
u
~ la!alolA - g 0,4
i""'"
I'B-O,~'"
~
---
U
1
:Xi
~
E
~ ~ I-- I
V 1~-02~
Is""4j.1A
Ji
02
~
IB=2~.
~ I I
/. 10
~ ~ ~
I I
~
0
100
V.ElV), COLLECTOR.£MlnER VOLTAGE
Vce(V), COLLECTOR·EMITTER VOLTAGE
•
1000 10
j,VCE""6~1 Ic=1O'/a
900 Pulse Test Pulse Test
~
801) !:i
~
!
i
700
=,'
I 600
Vse (sat)
I 500
r\ en
~
0.5
03
8 1\
400
!
.J 300 ~
<>,
0, 1
VeE (sat)
'200 ! 005
100
.J003
o 3 5 10 3050100
001
0.01 0.03 0 1 0.3 0.5 1
0,1 03 0.5 3 5 10· 30 50 100

10K 10
~~1'!..~
VeE 6V
I-
U OK
I 3K
"""-
- -
S
I
!
"
~ 500
1K
300
I
~
...
r-- .... r-- ..
Ia: 100
:::>
,/ S 0.5
u
50 o.3
1:1'
l:
~
30
10 0.1
-0.1 -0.3 0.5 3 5 -10 30 50 - 100 10 30 50 100
l,(mA), EMITTER 'CURRENT Vcg(y), COLLECTOR-BASE VOLTAGE

"
KSC2785 . NPNEPITA>CIAL SILICON TRANSISTOR
AUDIO FREQUENCY ·AMPLIFIER

'0 HIGH FREQUENCY OSC. TO-92S
'. Complement to KSA1175
.• Collector-Base Voltage Vcao=60V
• High Current Gain Bandwidth ProduCt h =300MHz (l\tp)
Characteristic Symbol Rating Unit·

Emitter-Base Voltage VeBo 5 V
Storage Temperature Tstg -55.,.150 °C
;~ .
Collector-Base Breakdown Voltage BVceo Ie =100pA, Ie =0 60 V

Collector-Emitter Breakdowl) Voltage BVceo Ic =10mA, IB =0 50 V
Emitter:Base Breakdown Voltage BVeBO Ie =-10pA, Ic=O 5 V
Collector Cut-off Current ICBO Vce =40V, b =0 0.1 pA
Emitter Cut-off Current leBO Vee =3V, Ic =0 0.1 pA
DC Current Gain hFe Vce=6V,lc=1.0mA 70 700
Collector-Emitter Sl\turation Voltage Vce (sat) . le=100mA, le=10mA 0.15 0.3 V
Current-Gain-Bandwidth Product h Vce =6V, Ic ";10mA 300 MHz
VCB=6V,le=O
Output Capacitance Cob 2.5 pF
f=1MHz
Noise Figure Vce=6V,le=-0.5mA
NF 4.0 dB
f=1KHz, Rs =5000
..-
hFE CLASSIFICATION
hFe 70-140 120-240. 200-400 350:700

·KSC2785 NPN EPITAXIAL SILICON TRANSISTOR

100 100
f-- -
11"400"AJ - -Ve.-fN
80 ~ P .. 1a-3SO,.A 30
~ '....../ - 1.-3OO,.A II
t~ 110250,..
~V~
Y
V- I--
- ..-
il_~
.1B_1~ -
I
I
-
I
1.-100,..
20 Y- ,--f- -
4 12
r--I!F 18
-
20
0.1
..
0.2 D.4 1.0 1.2

YCIIM. COU~ITTER_TAGE YaM. IWIE-EMITTER_TAGE
DC CURRENT GAIN CURRENT GAIN BANDWIDTH PRODUCT
- I-VCE_fN f-- Vce,.fN
=
V
r--..,
30
10
10 30 100 300 0.1 0.3 30 100
Ie (mA). COLLECTOR CURRENT Ie (mA). COLLECI'OA CURRENT

~ -1,._0
f-- 1c-101B -!.lMHz
10
rlZ
~
!
Vee (sal)
V
~
S
- Vet; (sat) 0.3
10 II III
10 30 100 300 10 3050 100 300 1000
Ie (mA), COLLECT<?R CURRENT Yea (V). COLLEClOA-BASE \/OLTAGE

KSC2186 NPN EPJTAXIAL SILICON TRANSISTOR
TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, .

MIXER, OSCILLATOR TO-92S
• High Current-Galn-Bandwldth Product fT =600MHz (1YP)

• High Power Gain Gpe=22dB at f=100MHz
Characteristic Symbol Aatlng Unit

COllector-Emitter Voltage . Vceo 20 V
Storage Temperature Tstg. -55-150 °C
Collector-Base Breakdown Voltage BVceo Ic=10pA,le=0 30 V

Collector-Emitter Breakdown Voltage BVdeo Ic = SmA, Is =0 20 V
Emitter-Base Breakdowl) Voltage BVeBo le=-10pA,lc=0 4 V
Collector Cut-off Current Iceo Vce =30V,le=0 0.1 pA
Emitter Cut-off Current leeo Vee =4V, Ic =0 0.1 pA
Base-Emitter On Voltage Vee (on) VCE=6V,lc=1mA 0.72 V
Collector-Emitter Saturation Voltage Vce (sat) Ic=10mA,le=1mA 0.1 0 ..3 V
r
Current-Gain-Bandwidth Product fy Vce=6V,lc=1mA 400 600 MHz
Output Capacitance Cob Vce =6V, Ie =0 1.2 pF.
f=1MHz
.. Collector-Base Time Constant Ccrbb' Vce=6V,le=-1mA 12 15 ps
f=31.9MHz
Common Source Noise Figure NF Vce=6V,le=-1mA 3.0 5.0 dB
Rs =500, f=100MHz
Power Gain . Gpe Vce=6V, le=-1mA· 18 22 dB
Rs =500, f=100MHz
(Typ)
hFE CLASSIFICATION·
Classification A 0 V
hFe 4O~80 70-140 120-240
234
c8SAMSUNG .SEMICONDUCTOR
=El.
I8Jl1O,.A1
18
10ll00~ 10
16
10.~_
10L60,.A
LoJ-
I I
10.60,.A-
10.J,.A_
I
10.4O,.A
10.Jo,.A
10.20,.A
I
10i 1O,.A
o 0.1 I
- 0 2 8101214161820 0.2 0.4 0.6 0.6 1.0 1.2
VOl! (V). COLl.EC:IOIW!MlTTER VOLTAGE VIE (V), IlASE-EimTER VOLTAGE

1000 10000
CE_fN
500 t----- vce - sv
300
I'\.
- 10 0
o.s 351030 10 30 50 100
Ie (mA). COLLECIOR CURRENT Ie (mAl. COLI.ECIOR CURRENT
COLECTOR-EMITTER SATURATION VOLTAGE cOLLECTOR OUTPUT CAPACITANCE
0
1.7
!
t-- f.l~i
f--- Ic_10ta
3 IE·O
1.5
1
f'...
VeE (sat)
I'
1"-...
/' 1
VeE (sat)'
1
--- ~
0.7
1101
0.1 G.3 o.s 3· 5 10 30 10 30 50 100
~l"". COLLECIOR CUIlRENT VCB 00. COLI.EC'fOR.I!I VOLTAGE

INPUT ADMITTANCE (yle) FORWARD TRANSFeR ADMITTANCE (yIe)

va. COLLECTOR CURRENT .... COLLECTOR CURRENT
1000
Va- BV VCE-BV
50 ~ f==: R' "
100• ,-•. .
500
201--f- !foo MHz 300 107 MHz
10'~""_ ~~
e~
~w .~ 100 MHz
iI"~II'·1·/~·lill'0~7M~HzII
100
iuill-w 50
... , -ble
fuf I.rJ. 10.7 MHz
Ug.~ d
20
... ,,, 1
II 02 10 -ble
01~~~~!i1i~~~~~~~~~~
0.05
002
OO~~1~0~2~~0~5~~~~~~U'~0~2-0~~5~0u.u'00' 1
01 0.2 0.5 10 20 50 100
lc(mA), COLLECTOR CURRENT lc(mA~ COUECTOR CURRENT

REVERSE TRANSFER ADMITTANCE (yre) OUTPUT ADMITTANCE (yoe)
va COLLECTOR CURRENT v. COLLECTOR CURRENT
IJ..I Ijb.7 M~Z 11 VC1;-6V
1 ..... - 100MHi-t-- v'" 6V
o ~ boo
-c:,.1 III lQOMHz O. 5
1
-boo -107 MHz
lOd~Hz II
....
~~ 02
I ....
.1
il
II
2
, boo
I
I
10.7 MHz 1/ I
_~Iif
d o' O5
I'
0.4
-boo 100 MHz
002
05 I
1
TI 11111
Tf 11m 'TTI1
00 1
0.1 0.2 05 10 2Q 50 100 0.1 0.2 05 10 20 50 100
lc(mAl. COLLECTOR CURRENT lc(mA~ COLLECTOR CURRENT
INPUT ADMITTANCE (yib) v•. COLLECTOR CURRENT FORWARD TRANSFER ADMITTANCE (JIb)
vs. COLLECTOR. CURRENT
1000 1000
vcs=e 0 V VCB-=e,Q v
500 500
'~~ ~HZ
200
n
107 MHz
Ww 200
~A1 W'Mt"
gg 100 - ',odMl l
Ii 50
100 MHz
100
U "'"
50
'":"
II 20
--b,o;
I
10.7. MHz UUl
II ::
-go,
. .li
I
I
10.7 MHz
10
-
f--
. ,
1
/ ,
01 02 05 10 20 50 100 0.1 0.2 05 10 20 50 100
lc(mAl. COLLECTOR CURRENT Ic(mA~ COLLECTOR CURRENT
C8 ~AMSUNG SEMICONDUCTOR
236
REVERSE TRANSFER ADMITI ANCE (yYb) REVERS TRANSFER ADMITTANCE (yre)

va. COLLECTOR CURRENT vo. FREQUENCY
10m_~
1
vie-60 V VCE=60 v
Ic=l a rnA
5
2
-b<b
--- i
lOa MHz
.I.! U 1
I :!c
1
-L 10rr
~~
8i1
05
~
-b..
107 MHz 02 .,. I

/-@•
5 brt>
- Ii 01
r-,.---
1-1-·
002
i 0.05
f--- 1-. --
0.0 1
0102
~
05
rt Tim' 10 20
I
50 100
002
001
10 20 50 100 200 ~O 1000
Ic(mA). COLLECTOR CURRENT
FORWARD TRANSFER ADMITTANCE (yIe)

va. FREQUENCY
1000.~m1
~o
VCE,,",6
~1~
v
!is
"'
jli:
200
100
8
i 50 ...
. ........
U 20 ,
n 10
-bfe ",
\~0----2~0~~-5~0·:~!'~1·00-----200~~·5-00~~'UJOOO
QMHz), FREQUENCY QMHz), FREQUENCY
POWER GAIN AND NOISE FIGURE INPUT ADMITTANCE (yle)

vs EMITTER CURRENT va FREQUENCY
24 100
0,
~l;l. V.!
1-100 MHz 0
VCE=6
lc'"'1.0
vl;l
~
20 J
5.
0
1,6 ~ 20
Gpo......
0
I
III I 5_ 0.
; 12 2 15
f f. 1/ 2
11 :/
i 6 l 0 J '" I~/
1 F-'--.-' '"
t-- 0.5 ~ ~.
5
NF ~F-
21---
_.
0 o. 1
-0.051-0.1 -03 -1 -10 10 20 50 100 200 500 1000
l~mA). EMITTER CURREI ~MHz), FREQUENCY

KSC218S· . . NPN EPitAxiAL SiliCON TRANSISTOR
100MHz 0 .... ~ TEST CIRCUIT
OUTPlIT
SOD
0.01 "F
SOD O'~-f~--.---I
... 238
·c8SAMSUNG SEMICONDUCTOR
.. r." .... ;.
FM/AM RF AMp, MIX, CONY, OSc, IF

TO-92S
• Collector.Base Voltage VCEO= 30V
• High Current Gain Bandwidth Product fT =300MHz (~p)
• Low Collector Capacitance Cob: 2.0PF (~p)


1. Emitter 2. Collector 3. Base .

Characteristic Symbol Test COl'ldition Min ~p Max Unit
Collector-Base Breakdown Voltage BVcBO Ic =10pA,le=0 50 \J

Collector-Emitter Breakdown Voltage BVceo Ic =5mA, Is =0 30 V
Emitter-Base Breakdown Voltage BVeBO Ie = -10pA, Ic =0 5 V
Collector Cut-off Current IcBO Vcs=50Y,le=0 0.1 pA
Emitter Cut-off Current . leso Vee =5V, Ic =0 . 0.1 p.A
DC Current Gain hFe . VCE=fN, Ic=1mA 40 240
Base-Emitter On Voltage VSE (on) VCE=fN,lc=1mA 0.67 0.75 V
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,le=1mA 0.08 0.3 'V
Current Gain-Bandwidth Product h VcE =6V,lc =1mA 150 300 MHz
Output CapaCitance Cob Vcs=fN, f=1MHz 2.0 2.5 PF
hFE CLASSIFICATION
hFe 40-80 70-140 120-240
c8 ~AMSUNG SEMICONDUCTOR
·KSC2787 NPN·EPITAXIAL SILICON TRANSISTOR
STATIC CHARACl'ERISTIC BASE-EMITTER ON VOLTAGE
14 10._ - v .IN
f 1••eo,;A
V ,
I•• so,..o.
I""
1••-
1••30""
I""
IB-2O,.A.
1••10pA
,..... 02r---+--+---t-,I--t----t---j
12 16 20 24
".. 1Yl,IIA8E-EMITTER 1/OLTAGE
10000
500 I- rVa;-
10
le·l0 .-
300
Vae!
f--
"""
V
30
CE sat)
10 om
'"''!Ill
0.1 0;3 o.s 3510 3050 100 0.1 3 5 10 30
Ie (mA), COLLEC:IOR CURRENT Ie (mAl, COlLECfOR CURRENT
COLLECTOR INPUT CAPACITANCE
1000
t- r' . V r--.
~t"" Cib
t- t-!.'
It.
V l"-r-- Cob
./ 1
10 0.1
0.1 G.3 o.s 1 2 10 20 50 0.1 D.3 0.5, 1.0 3 5 10 30 60 100
Ie (mAl. COLLECTOR CURRENT Yea 1Yl, COl.LEC1Ofl.BASE 1/OLTAGE


80T-23

ELECTRICAL CHARACTERISTICS (Ta =2.5°C)
Collector Cutoff Current ICBO VcB =35V, IE=O 0.1 ,..A

Emitter Cutoff Current lEBO VEB =5V, le=O 0.1 iJ A
DC Current Gain hFE VeE=1V,le=100mA 70 240
VeE =6V, le=400mA 25
Collector-Emitter Saturation Voltage Vce(sat) le= 1OOmA,.IB= 1 OmA 0.1 0.25 V
Base-Emitter On Voltage VBE(on) le=100mA, VCE=1V 0.8 1.0 V
Current Gain-Bandwidth Product fr le=20mA, VcE =6V 300 MHz
Output Capacitance Cob VcB =6V, IE=O 7 pF
f=1MHz
Marking
hFE CLASSIFICATION
Classification 0 y
hFE 70-140 120-240
hFE grade
c8 SAMSUN~ SEMICONDUcroR 241

··KSC2859\· NPN EPITAXIAL ·SILICON TRANSlSI'OR
STATIC CHARACTERISTIC BASE-E.rm.. ON VoLTAGE

50 100
IB-r:J.
45 , IB-o!OO,.A Vce-1V
I
I
IB-35O,oA eo
I
I
..
,'·i~ I
Reo
'.-~
, ~- -. I.J200,.I\_ I--
I I
I~
i
I
_1B-15OpA __
I
f--
IB_loopA f---
1
II
10 2Q
! I
.ITi~
o 0 ..J
o 1 9 10 0 0.2 Cl.4 08 08 1.0
v..(V).-..TTO _ _ _
DC CURRENT GAIN COLLECI'OR OUTPUT CAMClTANCE

2Q
1~!lJ
1000
500 Vce_1
I--
300l
10
f-
" K=
i"'-.. ......
3 5 . 10 30 50 100 300 500 1000 3510 30 50 100 300

Ie (mAl. COLLECIOII 0 0 _ v.. (V).~VOI._
COLLECI'OR-EMITTER SATURATION VOLTAGE
10
- Ie_ Ole
v.....)
.
I
Vee ( ...)
0.111
(II .. III
Q3 OS . 3 5 10 30 50 100
Ie (mAl. COI,LECIOR oolIRENT
c8 SAMSUNG SEMICONOUClOR ... 242

KSC3120· NPN· EPITAXIAL SILICON TRANSISTOR
MIXER FOR UHF TV TUNER

Gc£=17dB (TYP) S01-23
Cre=O.6pF (TYP)
ABSOLUTE MAXIMUM RATINGS (Ta.=25°C)

Emitter-Base Voitage VEBO 3 V
Collector Current . Ic 50 rnA
Base Current (DC) Is 25 rnA
Collector Dissipation (T.=25°C) Pc 150 mW
I
Collector-Emitter Breakdown Voltage BVcEO Ic=1mA, Is=O 15 V

Collector Cutoff Current ICBO VcB =30V, IE=O 0.1 /AA
Emitter Cutoff Current IESO VEs =2V, Ic=O 1 IJ.A
DC Current Gain hFE VcE =10V, Ic=5mA 40 100 200
Current Gain Bandwidth Product h VCE=10V,lc=2mA 1500 2400 MHz
Reverse Transier CapaCitance Cr. Vcs=10V, IE=O, f=1MHz 0.6 0.9 pF
Conversion Gain Gee Vcc=10V, Ic=2mA
f=800MHz, fL =830MHz . 12 17 dB
Noise Figure NF Vcc=10V, Ic=2mA
1=800MHz, IL =830MHz 8 dB
Marking
.~
c8 SAMSUNG SEMICONDUCTOR ·243

DC CURRENT. GAIN CURRENT GAIN BANDWIDTH PRODUCT

10000 100000
Vee" 10V VeE- 10V
50aO
~ slfooo
2000 0
1000
f 20000
%
1500 i
l-
10000
,"Ii
.
a:
a: 100
200
i~ 5000
"
u
U
50 I-
Z
201l?
"
,j 20 i 1000
10
B
'If 600
i
~ 200
,2
100
0.1 0.2 0.6 1 2 5 10 20 50- 100 0.1 0.2 0.6 1 5 10 20 50 100
100mA~ COLLECTOR CURRENT Ic(mA), COLLECTOR CURRENT
Cr.Vcb CHARACTERISTIC POWER DERATING

100 240
t-1MHt
I:
50 IE-a
r- i- 210
~ 180
i
I
150
'1
~ 0.2
~
05
0.1
1'20
§
90
60
" I\.
I\.
.,t o.05
30
'\
O~02
0.0 1
0.1 0.2 0.5 1 2 5 10 20 50 100 25 50 75 100
'\ 125 150 175 200
Vco(V), COLLECTOR-BASE VOLTAGE To(·C), CASE TEMPREATURE
Gc.... CHARACTERSTIC OSC LEVEL

32 32
Vee- 1OV Vee 1QV
fFlF-800MHz fRF"",aOOMHz
28 'L""830MHz- 28 fL=B3OMHz
z 23
..
2.
C ~
z 20
"
Z
20
0
ill ~
iii> '16 L b..
a:
~ ...... ~
I-
z 16
Z
0
u
/ I""-- ~ 0
u
1/V
if 12
i 12
/
~ 1
" 1
I
o
4 -20 -16 -12 -8 -4 0 12
Ic(mA), COLLECTOR CURRENT (dBm~ OSC LEVEL
c8SAMSUNG SEMICONDUcrOR 244

KSC3125 NPN EPITAXIA.L SILICON TRANSISTOR
TV FINAL PICTURE AMPLIFIER APPLICATION

50T-23
ABSOLUTE M,AXIMUM RATINGS (Ta=25°C)

~mitter-Base Voltage VEBO 4 V
Collector Current Ic 50. mA
• Refer to KSC388 for qraphs

1. Base 2 Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (Ta= 25 ° C)

!
Collector-Emitter Breakdown Voltage I Ic= 1rnA. 1.=0 25 V
Collector Cutoff Current ICBO Vce=dUV, IE=O 0.1 ' uA
Emitter Cutoff Current lEBO VEe =3V, Ic=O 0.1 uA
DC Current Gain hFE VcE =10V,lc =10mA 20 70 200
Collector-Emitter Saturation Voltage VCE(sat) Ic=15mA, le=1.5mA 0.2 V
Base-Emitter Saturation Voltage VeE(sat) Ic=15mA, 1a=1.5mA 1.5 V
Current Gain-Bandwidth Product fr Ic=10mA, VcE =1C V 250 600 MHz
Output Capacitance Cob Vce= 1 OV, I~=O 1.1 1.6 pF
f=1MHz
Marking

;I<SC3125 1
STATIC CHARACI'ERISTIC
16
14
10-7OooA
/'
1e-8OpA
V
10-8OpA
V
10_40",
/'
,,- 11-3O,.A
1£-2O,.A
2
, Ie-!O,.A
o 0,1 L.0'1--0':':2:----::'0,4:---O,6~-:':0,6:---:-1'o:-----:-:1.2
o 4 12 16 20
Yell (VI. COLI.ECJOR.EMmER VOLTAGE _ (VI. IIASE-EIIITTI!R VOLTAIiIE

DC CURRENT GAIN COLLEC1OR-EMITTER SATURATION VOLTAGE
10
500 I-- VeE 10V"

r-- 1c_101B
Visa,)
1 200
IB 100
I--
g
V
1 60
r-- t- VeE (sat)
20
1111
10
0,1 0,3 o.s 1 • 3 5 10 30 60 100
0D1
0,1 0.3
Io.s" I 3 5 10 30
Ie lOlA), COLLECIOR CURRENT Ie (mAl. COLLECIOR CURRENT
INPUT CAPACITANCE
COLLEC1OR oQTPUT CAPACITANCE
-
0
t-- VCE-10V
./ ....
l/V
,.nAHz
IE-O
"
""'-.
10 0.1
0,1 0,3 o.s 1 3 5 10 3060 0,1 0,3 0,5 3510 3060
c8 SAMSUNG SEMI~NDUcroR 246

KSC3265 NPN EPITAXIAL SILICON TRANSISTOR·

• Complement to KSA1298 80T-23
ABSOLUTE MAXIMUM RATINGS (T.=25°C)

Collector Current Ie SOO mA.
Base Current .IB 160 mA
Collector Dissipation Pc 200, mW
Junction Temperature Tj 150 'c
Storage Temperature Tstg -55"'150 'c
I
• Refer to KSD261 for graphs
ELECTRICAL CHARACTERISTICS (Ta=: 25 0 C)
Characteristic' Symbol Test Condition Min Typ Max Unit
Collector-Emitter Breakdown Voltage BVcEO Ic=10mA,IB=0 25 V

Emitter-Base Breakdown Voltage BVEBo IE=1mA,lc=0 5, V
Collector Cutoff Current ICBO VcB=30V, IE=O 100 nA
Emitter Cutoff Current lEBo VEB =5V, Ic=O 100 nA
DC Current Gain hFE1 VcE =1V,lc=100mA 100 320
hFE2 VcE =1V, Ic=SOOinA 40
Collector Emitter Saturation Voltage VCE(sat) Ic=500mA, IB=20mA 0.4 V
Base-Emitter On Voltage VBdon) VcE =1V,lc =10mA 0.5 O.S V.
Current Gain Bandwidth Product fr' VcE =5V"lc=10mA, 120 MHz
Output Capacitance ' Cob VcB=10V,IE=Of='MHz 13 pF
I'
Classification 0 y
K 1 0
hFE (1) 100-200 160-320
hFE grade

KSC3488 NPN EPI.TAXIAL SILICON TRANSISTOR

• Complementto K5A1378 T0-925
=
• Collector Dissipation Pe 300mW
ABSOLUTE MAXI~UM RATINGS (Ta =25°C)
Collector-Base Voltage VCBJ:) 30 V

Collector-Emitter \A:>ltage VCEO 25 V
Emitter-Base Voltage V~ 5 V
Collector Current Ie 300 rnA
Collector Dissipation Pc 300 rrfN
Storage Temperature Tstg ...,55-150 °C
1. Emitter 2: Collector 3. Base
ELECTRICAL CHARACTERISTICS (Ta =25°C) .
Characteristic Symbol Test Condition Min lYP Max Unit
Collector-Base Breakdown Voltage BVceo Ic = 100,..A, IE =0 30 V

Collector-Emitter Breakdown Voltage BVcEO Ic =10mA, Ie =0 25 V
Emitter-Base Breakdown Voltage BVEBJ:) IE=-10,..A,l c =0 5 V
Collector Cut-off Current ICBJ:) Vce =25V,IE=0 0.1 pA
Emitter Cut-off Current lEBO VEe =3V,lc=O 0.1 pA
DC Current Gain hFE VcE =1V,lc=50mA 70 400
Collector-Emitter Saturation Voltage VCE (sat) Ic=30~tnA, le=30mA 0.14 0.4 V
hFE CLASSIFI~TION
hFE 70-140 120-240 200-400


50 100
I·-i~l
45 •• 400",,-
VCE=1V
V- I
IB_35OpA
I . 80
'Tj ii
II:
::J
U 60
I.=..b""
f- I--
I.J200~_ t--
I I
10-150",,_
I
r-
I1
.Ii
40
IB-100,.A 20
10 r- ~-- f--
I
o
'"1 1-
50
./
o 9 10 0.2 OB Q.8 1.0
v .. M. BASE·EMITTER IIOLTAGE
lOOO,§I"'_
Vee M. COLLECIOR-EMITTER VOLTAGE
DC CURRENT GAIN CURRENT GAIN-BANDWIOTH PRODUCT
I
1000
500 r-- VCE=1V Vc -

300,
1---
... t":-
~ r-
lL--L~~~ __~-U~~~-L~~ 10
1 3 5 10 30 50 100 300500 1000 1 10 30 50 100
Ie (mA), COLLECI'OR CURRENT Ie {mAl, COLLECTOR CURRENT
10 20
I-- Ic=101B
10
i:)J
1
Vee sat}
"
; l'..
11 I........... .......
Vee sat)
I
;
0.01. 1
Q.3 OS 3 5 10 . 30 50 100 10 30 50 100 300
Ie (mA). COLLECI'OR CURRENT Yea M. COLLECI'OR-IIASE VOLTAGE

., '
K8D227·· NPNEPITAXIAL SILICON ·TRANSISTOR
.'.

TO-92
• Complem~nt to KSA642
Cbaracteristlc Symbol Rating Unit
Collector-Base Voltage VCBQ 30 V

Collector Current Ic 300 IT)A
Collector Dissipation Pc 400· mW
1. Emitter 2. Base 3. Coilector
Characteristic Symbol Test Conditions Min 1\'p Max UnH
Collector-Base Breakdown Voltage BVcBO Ic =100,A,IE=0 30 V

,Collector-Emitter Breakdown Voltage BVcEo Ic=10mA, le=O 25 V
Emitter-Base Breakdown Voltage BVEBO IE=-10,A,lc=0 5 V
Collector Cut-off Current ICBO Vce=25V,IE=0 0.1 ,A
Emitter Cut-off Current . lEBO VEe=~ Ic=O 0.1 pA
DC Current Gain hFE VCE=1V,lc .. 50mA 70 400
Collector-Emitter Saturation Voltage VCE (sat) Ic -300(TIA, Ie .. 30mA 0.14 0.4 V
hFE CLASSIFICATION
Classification 0 V G
hFE 7()"140 12()"240 200-400
qs·SAMSUNG SEMICONDUCTOR 250

KSD227 NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC BASE·EMmER ON VOLTAGE

00 100
, 'B-io.~l
45 IB=400,.A VCE_W
II'"
40 , I
IB_350pA
I
i: I IBj300j
IB=25b,.A
I:i 15
:JoJ200",\_ r--
I I
ls'l00r- r--
II
10. IB=100pA r-
I
0.
,}"OOt LJ
0. 9 10. 0.2 D.6 Q8 1.0
Vee (V). COLLECfOR-EMITTER VOLTAGE _ (VI. BASE-EIIITTER VOLllOGE
1ooo,m_ _
•
1000
000 _ VCE_W
v =
300,
r-----
.......
,.,. .... r-.
10.
3 5 10 30 50 100 300000 1000 10. 30 00 100
Ie (mA), COLLECTOR CURRENT Ie (mA~ COLLECfOR CURRENT
'BA,SE-EMITTER SATURATION'VOLTAGE
cd'LLECTOR-EMITTER SATURATION VOLTAGE
10. 20
5
r- Ie ",,101e
10.
ir:!lJ
1
Vee 881)
, "
,11
i"""-- r--.
VCE{sat)
~
1
0.,01
0..3 0..5 3 5 10 30 50 100 3 5 10. 30 50 100 300
Ie (mA,. COLLECTOR CURRENT Vca(VI. COLLECfO~E VOLTAGE
c8 SAMSUNG SEMICONDlJCTOR 251,


TO-92
• Collector Dissipation Pc=500mW
ABSOL1JTE MAxiMUM RATINGS (Ta=25°C)
COllector-Base Voltage ' VCBO 40 V

'Collector Dissipation Pc 500 rWN
Junction Temperature Tj 150 OC·
Collector-Base Breakdown Voltage BVcBO Ic=l00pA,IE=O 40 V

Collector-Emitter Breakdown Voltage BVcEO Ic=:10mA,IB=0 20 V
Emitter-Base Breakdown Voltage BVEBO IE=-100pA,le=0 . 5. V
Collector Cut-off Current ICBO VCB=25V,IE=0 0.1 pA
Emitter Cut-off Current lEBO VEB =:r.t, Ic"O 0,1 pA
DC Current Gain hFE VCE=1V,lc .. 0.1A 40 400
Collector-Emitter Saturation Voltage VCE (sat) Ie =O.5A, IB =O,OSA 0.18 0.4 V
hFe CLASSIFICATION
hFE' . 40-80 70-140 120-240 200-400

STATIC CHARACTE"ISTIC BASE-EMITTER ON VOLTAGE

500
450 .. J.omA
..... r-
~- . J.
1
-"B_1.8mA
50
30
t-- I- Vce - 1V
'/V 1
~
, ,
--IB_1.6mA
la-lAmA
I
y IB-1.2mA
l
IB'l~mA
Ie_J.smA
IB-,o.j
1/
100 la.OAmA- r-'-
1 1 I
50
"i ..o.2jA- f--
3 4 9 10
0.1
o 0.2
II 0.8 0.8 1.0 1.2
VCE (VI. COLLECIOII-EI/lTTER lIOLTAGE -(y). _ITTERWL_
1000 , 10
.. ~
500 f-- t-VCE_1
t-- le_!O
300 , , "
.'
1
(101)
:J UI 11
,
, Z
,i :/-::;:::;
t==
,
Ii I1111 I Ii !ili'
,3 5 10 30 50 100 300 500 1000 3, 5 10 30 50 100 300 500 1000
Ie (mA). COLLECTOR CUIIReNT Ie (mA). COLLECTOR CURRENT

100
50 I---f- 1MHL
'E-O
30
j-.....
t-t--
1
10 30 50 100
Vea (y). COI.LEC1OfI.IIASE WLTAIlE

. KSD471A' ','-
NPN EPITAXIA'LSILICON TRANSISTOR,
AUDIO FREQUI;NCV POWER AMPLIFIER

. T0-92
• Complement to KSB564A
• Collector Current Ie =1A
• Collector Dissipation Pc =800mw
ABSOLUTE MAXIMUM RATINGS (Ta =25.oC)
Collector-Base VOltage VC&) 40 V

Collector-Emitte( Voltage VCEO 30· V
Emitter-Base Voltage VE&) 5 V
Junction Temperature Tj. 150 °C
Characteristic Symbol Teat Conditions Min lYP Max UnH
Collector-Base Breakdown Voltage BVCfM) Ic=100"A,IE=O 40 V

Collector-Emitter Breakdown Voltage' BVCEQ Ic=10mA, IB=O 30 V
Emitter-Base Breakdown Voltage BVE&) IE= 100"A, Ic =0 5 V
Collector Cut-off Current Ic&) 'VCB =3OV, IE =0 0.1 pA
DC Current Gain' hFE VCE=1V,lc=100mA 70 400
Collector-Emitter Saturation Voltage Vce (sat) Ic=1A,IB=0.1A 0.5 V
Base-Emitter Saturation Voltage VBe (sat) Ic=1A,IB=O.1A 1.2 V
Current Gain-Band width Product h VCE =6V. Ic=10mA 130 MHz
. Output capacitance . Cob Vca=6tI, IE =0, f=1MHz 16 pF
hFE CLASSIFICATI()N
hFE 70-140 120-240 200-400
.. 254. .'.
'. .
~,
KSD471A' NPN EPITAXIAL SILICON TRANSISTOR
-i --)..~rMJ.
lD
1000 _ _ _
G.9
500 I - - VCE.1Y
la*4.6mA 300
v:.....-
::::: ~i~~4.0~
IB ... 3.5mA
~ la-3.OmA
v::i"""' I
la_2.5mA
I I
~ IB-2.omA
If !a_1.5jA_ . -
0.2
~ IB_:t.- e---
i iB.o.s~
0.1
I
o 1 9 10 3 5 10 30 50 100 300500 1000
Veo (V), COll_EMmER VOLTAGE .Ie (mA), COLLECTOR CURRENT
•
'CURENT GAlN-BANDWIDTH PRODUCT
1000 10
f--- Vce_rN
I
"
~l !'-. I I
-+ ~ ·VBE (181)
--
I ii,
--- -
-- -+
itt±i I
r- VeE(I8I) --
- --
3 5 10 30 50 100 300 500 1000

om III
3 5 10
i: I
30 50 100 300 500 1000
Ie (rnA), COLLECTOR CURRENT Ie (mA),·COLLECTOR CUR~T
COLLECTOR OUTPUT CAPACITANCE SAFE OPERATING AREA

100 I 10
r--f.,MHZ r - - l . Te=25'C
50 (E-O
1--2"Sln~Pt
30
--r-.. -?OOms
1',...
0
t---
~ r....
5
3 ODS
0.03
1 _0D1
l' 10 30 50 100 10 30 !iO 100
Veo (y), COLLECJOR.BASE VOLTAGE -v"' (V), COLLECTOR-EMITTER VOLTAGE

KSD1020 PNP EPITAxiAL SILICON TRANSisToR
AUDIO FREQUENCY 'AMPLIFIER

• Complement to KSB810 . TO-925
ABSOLUTE MAXIMUM RATINGS (T~=25°C)
Collector-Base Voltage VCBlJ 30 V

Emitter-Base Voltage VEeo 5.0 V
Collector Current (DC) Ie 700 mA
'Collector Current (Pulse) Ic 1.0 A
Storage Temperature Tstg ..-55",150 °C
• PW ~ 10 ms, duty cycle ~ 50 % 1. Emitter 2. Collector 3. Base
Characteristic Symbol . Test Condilion Min Typ Max Unit
Collector Cutoff Current ICBlJ VcB=30V, IE=O 100 nA

El1litter Cutoff Current IEBlJ VEB=5V, Ic=O 100 nA
• DC Durrent Gain hFEl VcE =IV, Ic=100mA 70 200 400
hFE2 VcE =IV, Ic=700mA 35 140
• Base Emitter Voltage VBE VcE =6V,lc=10mA 600 640 700 mV
·Coliector·Emitter Saturation Voltage. VCE(sat) Ic =700mA,IB=70mA 0_20 0.4 V
• Base-Emitter Saturation Voltage VeE(sat) Ic=700mA, le=70mA 0_95 1.2 V
Output CapaCitance Cae Vce =6V; IE=O, f=IMHz 13 25 pF
Curre~t Gain-Bandwidth Product fr VcE =6V, IE= -10mA 50 170 MHz
• Pulse Test: PW~350 lAs, Duty Cycle ::;. 2% Pulsed
hFdl ) 70-140 120-240 200-400
,c8 SAMSUNG SEMICONDUCTOR, 256


1000
° I""l - t- IB J l
14oJol
500
8
lr I I 300 VCE=1V
:.- ....
6 IB=120~
I
4
a
8
~r-
"......
- ,,/ IB=rOIAA t - -
~. 18- 8O"A
1'-;60"A -
-
~
Il
6
IB=jOIAA
4
1,_12O"A
2
a I t
30 50 100 300 1000 3000 10000
10 20 30 40 50 3 5 10
V"'(V), COLLECTOR-EMITTER VOLTAGE le(mA), COLLECTOR CURRENT
BASE-EMITIER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT

COLLECTOR-ENiITIER SATURATION VOLTAGE
10000 100a
w t; 50a
r- Ic":'1101~
~ 3000
VeE 6V
8300
o g:
> ........
z
Q 1000 e~ 100
I:
!;[ VBE(sat)
~ 500
~"'
,.
§.
300
~ tOO
ffi 10
>
.; 50
Veilsitl
~
~=
30
" II i
to II
10 30 100 300 1000 3000 10000 10 30 100 300 1000 3000 10000
lc(mA), COLLECTOR CURRENT lc(mA), COLLECTOR CURRENT

K$D1021 ... ,j ~.: NPN EPITAXIAL SILICON TRANSISTOR

TO-925·
• Complement to KSB811
• Collector Current Ic=~A
• Collector DIssipation Pc = 150mW
ABSOLUTE MAXIMUM RATINGS (Ta;=25°C)
Characteristic Symbol Rating· Unit
Collector-Base ~Itage Vceo 40 V

. Collector-Emitte{ Voltage Vcs:J 30 V
ColI~or Dissipation Pc 350 mW
1. Emriter 2. Collector 3. Base
Characteristic Symbol Teat Condition Min lYP Max Unit
Collector-Base Breakdown Voltage BVceo Ic=100,..A,le"0 40 V

Collector-Emitter BreakdoWn Voltage BVcs:J Ic=10mA, 18.. 0 30 V
Emitter-Base Breakdown Voltage BVeBO le=-100,..A,lc=0 5 V
Collector Cut-off Current ICBO Vca -3(11/, le-O 0.1 ,..A
DC Current Gain hFE VCE ,·W,lc .. 100mA 70 400
Collector-Emitter Saturation Voltage Vce (sat) Ic=1A,18=0.1A 0.5 V
Base-Emitter Saturation Voitage V8e (sat) Ic=1A,IB=0.1A 1.2 V
Current Gain-Band width ·Product IT . Vce=fN, Ic=10mA . 130 MHz
Output Capacitance Cob . VCR =fN, Ie =0, 1=1MHz 16 ~F
hFE CLASSIFICATION
ClasaJlllcation 0 y G
. hFE 70-140 120-240 200-400
, - 258

1.0 1000
0.9 ; - -I.
500
f-- VCE=1V
L 300 , .r
.iii O.B
0.7 - --+ __ . - 1 . _ - - - 1 z I
I
J;.
I i I ~
II:
II:
.~_....,.._la=a.omA 1-· --1--·-~--- 100
I:
::>
u nB
.1 : i I
-- j
'"§ v.s ~ _ _""'--!-I~~2.5mA --1-- 4. --

I I
8
g0.3
0.4 "0..--...------;- I' -r-~
-r-'B
____...._i-.....
IB=2.omA
IZ
I
1.5mA
' g
1 '0 li!:;i ,"
,
Jl
0.2 f'.._--_-.....--......-f'·:'·~mA---'-
0.1
1L-_____.....__..........;::;'.=0.5!"A
I
----r--t+r - --'i-I-;"
!
Iii I II iili '
9 10 3 5 10 30 50 100 3OO!jlO 1000
Vee (VI. COLLECTOR-EMITTER VOLTAGE Ie: ImA). COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTACE
CURENT GAIN-BANDWIDTH PRODUCT COLLECTOR-EMITTER SATURATION VOLTAGE
3 5 10 30 50 100 300 500 1000 3 5 -10 30 50 100 300 500 1000

Ie (mA), COLLEcroR CURRENT Ie (mAl, COLLECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE POWER DERATING
100 500
--
450
50 r---!=1MHz
IE=O
c--- z
400
~
30
360
...... ..... ~ 300
\
\
r-- ~ 250
~
Ii'
i 200
\
... 5 !
8 If 150
100
\
50
1\
1
\
10 30 50 100 '25 50 75 100 125 150 175 200 225 250
Vea M. COLLECTOR-IIASE VOLTAGE T. tOe), AMBIENT TEMPERATURE
KSD1616/1.616A NPN .EprrAX.IAL .SILICON TRANSISTOR

TO-92
• Complement to K SB 1116/1116A
Collector-Base Voltage : KSD1616 VCBO 60 V

: KSDI616A' 120 V
Collector-Emitter Voltage : KSD1616 Vceo 50 V
: KSD1616A 60 V
Emitter:Base Voltage VeBO 6 V
Collector Current (DC) Ic 1 A
• Collector Current (Pulse)· Ic 2 A
Junction Temperature Tj 150 °C 1. Emitter 2. Collector 3. BaSe
• PWS1.0ms, Duty Cycle~50%
ELECTRICAL CHARACTERISTICS (Ta =25 ° C)
Collector Cutoff Current ICBO Vca=60V, le=O 100 nA

Emitter Cutoff Current lEBO VEi3=6V, Ic=O 100 nA
• DC Current Gain : KSD1616 hFe1 Vce=2V,lc=100mA 135 600
: KSD1616A 135 400
hFe2 Vce=2V,lc=1A 81
.. Bas~ Emitter On Voltage VaE (on) Vce=2V, Ic=50mA 600 640 700 mV
• Collector Emitter Saturation Voltage Vce (sat) Ic=IA,la=50mA 0.15 0.3 V
• Base Emitter Saturation Voltage Vae (sat) Ic=IA,la=50mA. , 0.9 1:2 V
Output Capacitance Cob Vca=10V, le=O, ·f=IMHz 19 pF
Current Gain Bandwidth Product fr Vce=2V,lc=100mA ·100 160 MHz
Turn On Time ton Vcc=.10V, h=100mA 0.07 118

Storage Time . Is lal =-la2=10mA 0.95 ,..S
Fa/I Time It VBE (off)=-2",-3V 0.07 118
• Pulse Test: PW<;350,..s, Duty Cycle~2% Pulsed
Classification y G L
hFE(1 ) 135-270 200-400 300-600

KSD1616/1616A NPN EPITAXIAL SILICON TRANSISTOR

100 10
~V "=~Om~
IBlZiOOjolA le-5.0mA 18""35mA
r le=4 SmA
...z
80
l
IB"'Y°/oiA I-- 08 !J. /.. . ,.., ~
V :.-~
,J5J-
II!0:
,:..
Z
w
r!J '/ .-.. ,.- I
'1/ V
-
::> le=200j.!A if ,,=~ Om~
u 60 ~ 08
I VI V IB=l.~AI~
0:
0 0:
ti g
'B=lOfAA
~
0
u
i
40
.I ~
'i
04
V I
Is""10mA
I
E IB=rO~
r
Ji
. 20
le=50jAA
~
02 JJ- L ~
I 10 0_8
I I
0.2 04 08 10
VcdV), COLLECTOR-EMITTER VOLTAGE Vc,(V), COLLECTOR-EMITTER VOLTAGE
•
DC CURRENT GAIN . BASE-EMITTER SATURATION VOLTAGE
1000 10
Ie 20-.
- ~
500
300
I
c
1=:::.
I
"~ 100 -VeE(sat
0: 50 05
~ 30 03
./
g
1 10 i i"l 0 1
i
3f--- -r- 1
>
005
003 c--
VCE{sat)
.n- -- ---
~~0~1~0~03~0~.0~5~.~071--~03~~10~5~~~~3~5~~10 001
~
0.03005 01
II 030.5 3 5 10
Ic(A), COLLECTOR CURRENT Ic(A~ COLLECTOR CURRENT

o. 8
~
\.
...z 6 \
~
II!
0:
::>
U
0: 0_5
,~
II \
\.
I
§
03
0_1
" !\ "
"
0: 04
2
\
\\
0.05 ;;;"'
003
" 1i
001
1 10 30
r I
50 100 300 25 50 75 100 125
\ 150 175 200
Vc,(V), COLLECTOR-EMITTER VOLTAGE TJ"C), AMBIENT TEMPERATURE
261
KSD1616/16.'t6A J3~~·~{NPN" EPITAXIAL SILICON TRANSISTOR
) " ."; '! "~
) "(tcmtt?
COLLECTOR OUTPUT CAPACITANCE CURRENT GAIN~BANDWIDTH PRODUCT'

1000
500 ~:,~OQ~
t; 500
:>
300
~ 30e f---
" 100 I--

f---
t ,"'
.~
0
0
...... ..2:
z 50
0
5
- 1-1"-
a
30
10 30 50 100 300
Vco(V), COLLECTOR-BASS VOLTAGE ' lelA), COLLECTOR CURRENT'
SWITCHING TIME
10._~ Vcc-10V~
Ic=10'IB1""-10'IB2
!IIi=
-.t 1s1,
t 05
~ 03
!
-.t
j 0,1
005
0.03 f---
O.O~"'0"'01"""":"0,"'00:"3:'-'"""0 .uO~'--,-J-:-3-:-0-:-6:'"""~
"'01'-""0"0"'3':-0":,0'"5
lelA~ COLLECTOR CURRENT

KSK30 SILICON N-CHANNEL JUNCTION FET
LOW NOISE PRE-AMP. USE

r0-92
High Input Impedance: Ig.. =1nA (MAX)
Low Noise: NF=O_5dB (TYP)
High Voltage: V.... =,..50V
Gate-Drain Voltage VgrJs -50 V

Gate Current Ig 10 mA
Storage Temperature Tstg -55"-'125 ·C
•
1. Source 2. Gate 3. Drain
Characteristic Symbol Test .Condltion Min Typ Max Unit
Gate-Drain Breakdown Voltage BVgrJs Vos=O, Ig= -1 OO~A -50 V

Gate Leak Current I.., V.. =-30V, Vos=O -1' nA
Drain Leak Current loss Vos= 1OV, VGS=O 0.3 6.5 mA
Gate-Source Voltage Vgs(oft) Vos= 1OV, ID=O. 1~A -0.4 -5 V
Forward Transfer Admittance IV"I Vos~10V, V.. =O, f= 1KHz 1.2 mS
Input CapaCitance Ciss Vos=O, Vgs=O, f= 1MHz 8.2 pF
Feedback Capacitance Crss Vg~=-10V, Vos=O
f=IMHz 2.6 pF
Noise Figure NF Vos= 1 5V, Vgs=O
Rg=100k!l 0.5 5 dB
f=120Hz
IDSS CLASSIFICATioN
Classification R O. 'Y G
loss(mA) 0.30-0.75 0.60-1.40 1.20-3.00 2.60-6.50
cIS SAMSUNG SEMICONDUCTOR 263

kSK30' SILICONN-CHANNEL JUNCTION FET <
"
lo-V.s STATIC CHRACTERISTICS

64 80
1
Vos=10V
56
,/
64
48
I- I
Z
W
a: 40
'wZ
a:
::>
0
/ II ~ 48
::>
z o
~
32 z
a:
e
/ 1/ ~
;,i 24
I e 32
j Rs=1kD
1/
V
/
I
VII j .VgS- o 2V_ e--
16
r-.I. 1/ -
<<S/
,
v,,- o 4V
As-2ko
-V ~,./
..
16 ;--
~0gs12V V"'
o 6V
-
o 8V
08
o
AS-5kO!..
Rs=10kD
~ .~
I::> ~.L
--. . , Vvt:~-; ~:'l
gs -
- V
-32 -28 -24 -20 -16 -12 -08 -04 -16 -08 a 20 ~ 60
Vgf(V), GATE-SOURCE Vos(Y),ORAIN..sOURCE
Yg.(V), GATE~SOURCE VOLTAGE
VOLTAGE VOLTAGE
lo..VDS IYIsl-Vgs
40 40
w
U
Vos=10V
1=1KHz /
z /
<32 :!l- 32
0
..
i
e V /
ffia: L 'L
..
a: 24
/~ a:
w 2.4
::> Vgs--O 2V In
o
z / Z
a:
/ / /
~...:: 16
...j IV v~,:,-oL l-
e
a: 16
/ / II
~ V- ~V ;a: / /
08 0- ~
V",'=-O
V.~=-O ~V
..
0
1i'i 08
/ / III
/
.~ ~ VQS--16
Vgs =-10V
V,,= 12V=
=
~
~
/ I //
gs--14V / I I I
o
08 16 24 32 40 -40 -32 -24 -16 -08
V".(V), DRAIN-SOURCE VOLTAGE Vgl(V), GATE-SOURCE VOLTAGE
IVls!-to V9s(Off)-lDSS
6.4 -10
Vos-10V loss Vos=1DV
f""1KHz 'Vgs-O'
w Vgs(off). Vos-l OV
.
0
z
l-
I- 48
10=01/-1A
..
IE
e i-"
..
a:
w
./k?;r ,/
.
In
Z
a: 32
l- ~,p~~sV
~~6"'~ lOsS
V
.
e
a:
~
h~
$ V
1 'o/:V' .....
.
a:
0
16
fl ,i
h
~
1i'i
S -02
:i!
~ '(
-01
16 32 48 64 01 a2 05 1 10
l,(mA), DRAIN CURRENT loss(mA). DRAIN CURRENT

IVfsHDSS NF-f
100 '0r-'-rnTm~'-rnTmr-'-rnTm~VM~_-'~5~V~
loss'Vos=10V
Vgs=O lo=1mA
~ 50
.
Z
I-
20
jVfs! Vas 10V
Vgs-O
'-1KHz
i
.
Q
1-0
i:!
g
ii: 61-+++t+tttt--++t-tHffl---t-+tttttlt--H-tttml
!!l
~
01 02 05 10 20 50 100
IDS1(mA), DRAIN CURRENT ~KHz). FREQUENCY
NF-Io Ciss-Vgs, CraS-VOD

5
Vos=15V
Rg=100KO
2.0
w
~
ii:
15
III
is
z
...::. 1'0
l
05
,\ f-120Hz
- 02r--t-+-~-+-r--t-t--t-i--i
0.1 0L---'--_-2':-.......-.J.4:-....L..-_"'::6--'--_:-8-"'-~,0
04 0.8 1.2 1 .• 20
V,o(VI. OATE-DRAIN VOLTAGE
lo(mA), DRAIN CURRENT
V,JVI. GATE-80URCE VOLTAGE
NF-Rg NF-VDS
10 \ Vos""'15V lo=1mA
lo-1mA Ag ""100KO
1\
:1\ \ ~~~;-+t+tH'H--++t-t+tHl--++t-Ht!l ~~L
~r-
..f
.\ ~~~
L ~~-
~ ~ ?- ""'' '1
o LUJllllILlJltl!!t~~~
100 200500 1k 2k 5k 10k 20k SDk lOOk 200k500k 1M 12 16 20 24 28 32
Rg(QI, SOURCE RESISTANCE Vos(V), DRAI~OURCE VOLTAGE
c8SAMSUNG SEMICONDUcrOR 265

SILICON N-CHANNEL JUNCTION· FET
POWER DERATING
160
140
z 120
~.. 100
. ~
.
~
~
~
~
80
60
40
20
'" ~
"\
I\.
'\
25 50 75
'\
100 125 150 175 200
Tc('C~ CASE TEMPERATURE

KSK65 Si N..CHANNEL JUNCTION 'fET
AF IMPEDANCE CONVERTER
• Built-In Diode Between G and S TO-928
• Low NY
Drain-Source Voltage Vo8o 12 V

Gate-Drain Voltage 12 V
VGoo '
Drain-source Current 1080 2 mA
Drain-Gate Current 1000 2 mA
Gate-Source Current IGSO 2 mA
Power Dissipation Po 20 mW
Operate Temperature TOPR -10"'+70 ·C
Storage Temperature Tstg -20"'+80 ·C
1. Source 2. Gate 3. Drain
ELECTRICAL CHARACTERISTICS (Ta =25 °C)

Character·istic Symbol Test Condition Min Typ Max Unit
..
Drain Current loss Vos=4.5V. VGs=O, 0.04 0.8 mA
Rs=2.2k!l±1%
Transconductance gm Vos=4.5V, VGs=O, 300 500 liS
Rs=2.2k!l±1%, f=lkHz
Noise Voltage NV Vos=4.5V, Rs=2.2k!l±1%, 4 IIV
CG=10pF, A curve
Voltage Gain Gv1 Vos=4.5V, Rs=2.2k!l±1%, -10 dB
CG=10pF, EG=100mV,
f=70Hz
Voltage Gain Gv2 Vos=12V, Rs=2.2k!l±1%, -9.5 dB
CG=10pF, EG=100mV,
f=70Hz
Voltage Gain GV 3 Vos=lV. Rs=2.2k!l1%, -11 dB
CG=10pF, EG=100mV,
f=70Hz
loss·Gv CLASSIFICATION
Classification P Q
loss (mA) 0.04-0.2 0.15-0.8

Gv1 (dB) >-13 >-12
Gv2 (dB) >-12 >-11
1::.1 Gv1-Gv2I(dB) <3 <3
1::.1 Gv1-Gv3I(dB) <3 -
•
287
KSK65 Si N·CHANNEL JUNcrION~ET
I".VDS I".VGS
,
800 0
T.I.2J.C vosL46J
L
Ta =25°C
•
800
/
~ .....
I- Vas=O
6 ~O
.,..v .
". vl""lo 1V
~
)~ ..... 1-- ..... 1-""

vLl.L , I..........
200
/' 1-- ....
vlJoL
lL
"""
I'~ 1--1---1-- VG~=loL 2
I- -- Vos--O 5V
Vos- 06V
Vas=-O 7V t1:~
#O~
10 12 14 16
0
-10 -0. 06 ""'"-0 , 02
Vos(V), GATE-SOURCE VOLTAGE
VOS<V). DRAIN-SOURCE VOLTAGE
gm~D
J. . . ........... 11
~J~
Vos-45V
b---: ~
Vos=4.SV
f ""1kHz
10
D.
f
T .. =lkHz
=wc.1
~ ~
, 0
09
Til =25°C
~J7 ~
f-'"'
; 08 w 08
i
I r-;!
:!
~ 0.5
0.7
08 ·111
I
I .
j:: 'oss;o 3mlf 11
~ D.' 4
I o. 3
o. 2
fl
I I 03
II II
1
02
, f lloss-'l,mA
0.1 0.2 03 04 05 0.6 0.7 O.S 09 10
o
-10 - 09 - 08V.oIV~
- 07 GATE-80URCE
- 06 as - 04VOLTAGE
II
- 03 - 02 - 0.1
II
loImA~ DRAIN CURRENT
Nf.f
0 2
Vos=45V
8 10 -SO<.\lA
Til ""25°C 28
8
,
2" 1\
0
I"
8
['\y-m I~
."
2
, I1\.! 8
I"
2
Ro 100
~JU I"'t--- 4
I"
O
0.010.020050102 051 5 10 20 50100
25 50 75 100 125
I"'.
150 175 200
~kH2), FREQUENCY
T.(GC), AMBIENT TEMPERATURE
c8.SAMSUNG SEMICONDUCT?R 268

KSK65 Si N·CHANNEL JUNCTION FET
NF-Ro NF-Io
24
Vos=45V 20
20 10 =300~A Vos=45V
,
'Td "'25°C Ro ""'DOkO-
T" =25°C
I 16
16 f-
1\ ! V
14 V
,,,,,oi z
1=100Hz
1=100HzY /
'\ /.!1kH' V ./
-- -
f=lk)f\ / / ' ~OkHZ
,
1,\
/ ./ '/
.'\ ~ V ~ /,
o
•
~ -"""
02
~
04 06 DB 10
01 02 051 2 5 10 20 5 100 20 0 500tO00
Rolkn) lo(mA), DRAIN CURRENT
•• SAMSUNG SEMICONDUCTOR
CO 269
KSK117· ,. SILICON ·,N-CHANNEL JUNCTIONFfEl'
LOW FREQUENCY LOW NOISE AMP.

TO-92·
HighlYfsl: 15mS (TYP)
High Input Impedance: Ig•• =-lnA
Low Noise, NF = 1dB (TYP)
Gate-Drain Voltage V,d' -50 V

Gate Current I, 10 mA
Storage Temperature T5tg -55"'125 °C
1. Drain 2. Gate 3. Source

Gate-Drain Breakdown Voltage BV,d' Vos=O. 1,=~100I'A -50 V

Gate Leak Current loss V,,=-30V. Vos=O -1 nA
Drain Leak Current loss Vos= 1OV. VGs=O 0.6 14 mA
Gate-Source Voltage V,,(off) Vos=10V. 10=0.1I'A -0.2 -1.5 V
Forward Transfer Admittance IV'sl Vos= 1OV. Vgs=O. f= 1KHz '4.0 15 mS
Input CapaCitance CISS Vos=10V.Vg,=0. f=lMHz 13 pF
Feedback Capacitance Crss Vgd = 1 OV. 10=0
f=lMHz 3 pF
Noise Figure NFl Vos=10V. Rg =lkll
10=0.5mA. f= 1 aHz 5 10 dB
NF2 Vos=10V. Rg=1kll
10=0.5mA. 1=1 KHz 1 2 dB
loss CLASSIFICATION
Classification Y G L
loss(mA) 1.2-3.0 2.6'6.5 6.0-14

STATIC CHARACTERISTIC Io-VDS
I-""
l - I--
rff '/ \lQ$=_01~
l - I-- ",if
i-"" .1
II vJ~-L)
... v
~
,,!=-h3J-
V --04V
o
-04 -0.2 10 20 30 40 50, 1
V..(V), GATE-$OURCE V.,(V), DRAIN-SOURCE VDsCV). DRAIN-SOURCE VOLTAGE
VOLTAGE VOLTAGE
I~Vg. IYfsl-ID
,. 32
Vos""10V
vosJlOv ''''"1KHz
~_I
g~p.. .p.\'2. ...~
~~ 'oS~~
12
!i
I
w
II:
II:
::>
<.>
z
C
'L .f--.
hp
i'A.
.<y'" / '
II:
0
;t L /~ !~
e
li
VL IJL f-lf
h h VI If
,6 ~ ~ r0
o
-1.6 -1.2 - 08 - 04 8 12 ,.
V,,(V), GATE SOURCE VOLTAGE lotmA), DRAIN CURRENT
I Yfs!-IDSS
100
50
20
v
./
V H-' I
10
loss: Vos-1 OV
Vgs=O
IYfsl: Vos:=10V
Vg$-O
f=tHZt
1
0.4 0 e 1 10 20 40
1D8S(mA). DRAIN CURRENT

KSK117; SILlCON~CHANNEL JUNCTION FET
NF·Vos NF·lo
10-0 SmA Vos=10V

Rg-1K~_
Ag ""1KO
\
W
0:
~
"Ii:w
\
1\ \
z~ \1
~
t"","OHZ ....... V
18u::
Z
.2
-\ l\
I--' I-'
'$ 120,",z ~ \1,\ f-10Hz
t.)K~Z.
f-120Hz
~ I\. f-1KHz
I I I I
10 15 20 25 30 35 0.5 15 25
V..(V). DRAIN-50URCE VOLTAGE ·1,(mA~ DRAIN CURRENT
NF·Rg NF·f
10
Vos=10V
VDSLlH
10=0 SmA
ID=O 5mA
Rg .. 1KO
I
1\ ,
f
z
.....
~"6Q
100 200 50Q 1k 2k 5k 10k 20k 50k10Qk200k SOOk 1M

Rg(Q), SOURCE RESISTANCE
o
~
10
Rg-10~
20
IUlC'1-
Rg ""'71(11
50 100 200 500 1k

~Hz).
- 2k
FREQUENCY
5k 10k 20k 60k1QOk
Cisa-Vos C,sa-Voo
1000 100
500 50
Vgs=O- 10-0'-
f""1MHz w f=1MHz
U
Z 20
0(
!::
0
.
u
0(
0(
U
10
"..
U
0(
~
-- Q.
"'"'
IL
i5 0.5
02
1 0.1
01 02 0.5 1 2 5 10 20 40 -01 -02 -0,5 -1 -2 -5 -10 -20 -40
V.,(V). DRAIN-5OURCE VOLTAGE V,IICv), GATE-DRAIN VOLTAGE
.c8 SAMSUNG SEMICOND~crOR 272

POWER DERATING
400
350
300
z
..~ 250 \
~0
;f
200 "\
I\.
150
~
l100 1\
50 ~
a 25 50 75 100
\ 125 150 175 200
Tc(OC), CASE TEMPERATURE

J($K123~ . ( 81 N·CHANNEL JUNCTIONFET \
AF IMPEDANCE CONVERTER
• BUILT-IN DIODE BETWEEN G AND S SOT-23
• LOW NV
(/
Characteristic Symbol Rllting Unit
Drain SOlll"ce Voltage Vosa 20 V

Drain Gate Voltage Vr= 20 V
Drain Source. Current . 1080· 2 mA
Drain Gate Current lr= 2 mA
Gate Source Current IGSO 2 mA
Operate Temperature TOPA -20"'80 ·C
Storage Temperature I Tsro -55"-'100 ·C
1. Drain 2. Source 3. Gate
. ELECTRICAL CHARACTERISTICS (Ta= 25 ° C)
Characteristic Symbol Test Condition .Min Typ Max Unit
Drain Current loss Vos=4.5V, VGS=O 130 200 470 ,..A

Rs=2.2kohm ± 1 %
Transconductance gm Vos=4.5V, VGS=O 0.9 1.6 mS
Rs=2.2kohm± 1 %, 4 ,..V
f=1kHz
CG=10pF, A curve
Voltage Gain Gv1 Vos=4.5V, -1 dB
Rs=2.2kohm ± 1 %
CG=10pF, EG=10mV,
f=70Hz
Voltage Gain Gv2 Vos=12V, 0 dB
Rs=2.2kohm±1 %
CG=10pF, Eo=10mV,
f=70Hz
Voltage. Gain Gv3 Vos=1.5V, -4 dB
Rs=2.2kohm± 1 %
CG=10pF, EG=10mV,
f=70Hz

KSK123·. SI N·CHANNEL JUNCTIONFET
'o-VD.
800 10
T.I=2~'C v",L. 5J
T~ =25°C
08 V
800
V
",V
!
VGS""O
~
6 o·
1;'1'1'
~ 1V vl=lo ../,/
1 400
V 1'1'1'1"'" d,=tL •
I...............
} 1./" 1'1'
1'1"'"
vLtL
200
!--'~ lL
V'~ I'f-" I-~ v~-!.olv
VGS--O 5V
2
#0 ¥
~~
J,.::I--' VGi--'O BV
Vas""'-Q 7V
10 12 14 16 -08 -06 -0 • -02
Vas(V), GATE-SOURCE VOLTAGE
V.,.(v). DRAlf'<.SOURCE VOLTAGE
g",.ID gm-Vas
.,k....I--+-
11
;J~
I
Vos-45V
~l -
Vos=45V
f ""1kHz f =1kHz
10 10 1--1"
:2?
=25°C
~)
\~
09 09
V
~ 08
iY ~
08 V
-u 7r-l
Z
< /
O.
Ibl ,tlf
ti'
06
I ~
t;
::>
Q
z0
07
06
:ii 05
u
In
:ii 05
loss=o3mY
/
I!' I!'
FE a • J
Ii O'
!
E
'/ E
I lL
03
'/ ! 03
1
02
01 / I'j- I,mA O
01 02 03 04 05 06 07 08 09 10
o
-10 09 - -
08 07 06 05 04 03 02
II- -
II 01
lo(mA). ORAIN CURRENT VQs(V), GATE-SOURCE VOLTAGE
NF-I
0 2
Vos=45V
8 10 =3OO.llA
T. =25°C 28
6
z 2'
•
2"-
~
is 20
0
I' 1"\
8
6 ~JII 2
I"
."- Il'h! 8 I"
R~Jbo. '
"
I
2 ~ ... 4
F\:i=1000
0
0010.020050.102 051 5 10 20 50 100
25 ,50 75 100 125
~ 150 175 200
~kHzl. FREQUENCY
T4"CI. AMBIENT TEMPERATURE
." SAMSUNG SEMICONDUCToR

ex
".
"kSK123 " SIN·CHANNEL JUNCTION 'FEY
NF·RG ' NF~D

24
Voo=4.SV
20 10 -300,.A Vos=r.45V
I 'Tft =25°C "" =100011-
T~ =2SoC
16
16
\ V
j""1DOHz 14 V
1=1 f=100HJ/ /
''\ /tllkHz V ./
, / K. :0-",
-
''''lkjZ''\ 1\ /
1\ V ./ /"
o
01 02 051 2 5
I
10
." 20 50 100 200 5oa1000
~
~-"""
02
V k:: ',/
~
04 06 06
RatOO) IDtmA), DRAIN C\mRENT
c8 SAMSUNG SEMICONDUCTOR 276,

KSK161 SILICON N·CHANNEL JUNCTION FEr
FM TUNER
VHF AMPLIFIER T0-928
- NF = 2.5 dB (TYP)
=
-IYFSI 9.0 mS (TYP)
ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Gate·Drain Voltage VGOO -18 V

Gate Current IG 10 mA
Junction Temperature T, 150 ·C
Storage Temperature Tstg -55""150 ·C
1. Drain 2. SoII'ce 3. Gale

. ,
Chara,cteristlc Symbol Test Condition Min Typ Max Unit
Gate Cut·off Current IGSS VGS= -0.5V. Vos=O -10 nA

Gate·prain Breakdown Voltage V(BR)GOO =
IG -1 OO"A, Drain -18 V
Drain Current loss Vos=10V, VGs=O 1.0 10 mA
Gate·Source Cuf·off Voltage VGS(off) Vos=10V,lo=1"A 0.4 4.0 V
Forward Transfer Admittance IV,sl Vos~ 1OV, VGS=O, 9 mS
f=1kHz
Reverse Transfer Capacitance Cras VGo=10V: f=1MHz 0.15 pF
Power Gain Cps Voo=10V, f=100MHz 18 dB
Noise Figuer NF Voo=10V, f=100MHz ·2.5 3.5 dB
IDSS CLASSIFICATION
Classification 0 Y G
loss 1.0-3.0 2.5-6.0 5.0-10
=8 SAMSUNG SEMtCONDUCTOR 277

~SK1.', /SILIC(). N.,'N·OHANNEL JUNCTION:FET
, . .
STATIC CHARACTERISTIC I.,.VDS
......
v!~=o t--
...z V
vgS-a
OJ
rr:
II: /
,,.
::>
c- (J Vgs=-O.2V
~
,.&/
I I 0:
0 / V v~,~-Lv
-J,.L .2
I I
02V' - ~
E
:;;
/.1/
'/ ...... 1--""'.
1
v"iTi Vg.=-Q 4V
.. ~d sJ-c- JIJ
Vgs= 0 BV
.-
Vgs -0 BV
I Vgs=-a BV
,u,
.......,. Vf}S=-1.6V
Vgs=-1 2V
5-- 1 1m
-1.2 -08 -04 a 5 10 15 20 25 1 2 3

V.~VI. GATE-SOURCE V..(VI. DRAIN-SOURCE V,S(VI. DRAIN-SOURCE VOLTAGE
VOLTAGE VOLTAGE
Crss-VOD Yls-VDS
100
5D f=100M!"I!.=
? f=1MHz=
Ta =25"C- T'125'~_
20
l:s=5~A
OJ
(J
Z 10 Dfs (I,s:1
"~ los 2m
los a SmA
~
(J
-bfs Ics""5mA(loss)
"
(J '\ Ics=2m
"
,
III
0 05
OJ
~ 'lo..
0.2
........
1 01
0.05
-
5
1
002 002
00 1 00 1
o -2 -;4 -6 -8 -10 -12 -14 -16 -16 -20 6 10 12 14
Vao(V). GATE~DRAIN VOLTAGE Vos(V), DARIN-SOURCE VOLTAGE
POWER DERATING la-Vgs

250 10
V~=lO~ /
-Ts -2S"C
200
I
Z
~ \ / I
"Ili
III 150
\ 1/ /
AS=100~
~
is
0: \
•
OJ
I/Q:l
. / " Y ).
0
IL 100
\
i
%
i\ J
\/
IL
\ / /
-
50
1/ L
\
\ o
V /. v./
~ V ........: ~ :::;...
..., ~
25 50 75 100 125 150 175 200 225 250 -2,0 -16 -12 -08 -04
,Tc(OC), CASE TEMPERATURE vlI.(V), GATE·SOURCE VOLTAGE

KSK161 SILICON N·CHANNEL JUNCTION' FEY .
IVlsHo VI ..Vos
20 100
Il 50
w _Vos=10V
~:1~~~~~
.......
u
z
16
f=1KHz
_ T a =2SoC
w
20
.
i
a
rr:
."'~ ~I.:--
U
Z
;!
'10
f==bls= f== F1os=5mA(loss)
los""2mA
w
ia los a SmA.
.I!'
Il;
z
12
1::===~P;;s~'O""- ..
P"
./.
....
:>
.
a
rr:
;r
- -
~
l'~Y !
Ii
05 FQls= = FI, "SmA toss
los""D.5mA
los 2mA
rr:
...
0 ...:;:
e 02
W 0.1
,J
Ii
005
!
.
~ 002
4 10
001
4
• 10 12 14 16 , 20 22 24
1,(mA), DRAIN CURRENT Y,slY), DRAIN-SOURCE YOLTAGE
I
eisa-Vgs IVIsHoss
tODO
'00
500 loss : Vos-l0V
w Vgs-O
u 50 Vf. : Vos=10V-
Z
w
200
g Vgs=O
U
Z
. 100
..
:I
a
f'""lKHz
Ta-25°C
5..
u
.
50
20
rr:. 20
i. . ...~
...
.
:>
!
10
...rr:
.
0
rr:
'0
~ ;r
rr:
-:
u ...0
Ii
02~-+--1---t--+--4---t--+--4---t-~
i
~
:'"_:-,"':.::-72 .0
0.1 0':-:0:':2:-_:"0.":4-:0"':6:'"_:-0:'-.:--:,':.0--'i"':.2:'"--1="4-:-"-",:,":
.• 1
04 0.6 2 5 20 40
Y.~V), GATE-SOURCE VOLTAGE 1,..(mA), DRAIN CURRENT '"
VIs, V, ..I V• .(off)-Ioss
100 -1 0
Vg&{off): Voss-l0V
ww
UU
50 os=~;p
VIl8 ""O 5
lo-1jJA
loss : Vos-l0V
ZZ
e
T."",25°C
,.
~
~
V'" 0
20 T,=25°C ~
ii
aD
CC c 10 I-- . .fs ~ -2
....
rr:rr:
......
WW
zz
c ..
W
!
~ - 1 ~
~
KI
......
rr:rr:
~
OW
rr:" ~
;15 " -0 5
o it; 1
~ .
......
... rr:
n° , 0.2
.0
5
..... ~
~. I!!
> -0. 2
-0. 1
10 20 50 100 200 500 1000 2000 5000 10000 0.4 0.6 '2 5 10 20 40
~MHz), FIIEQUENCY loss(mA~ DRAIN CURRENT

KSK161 'SILICON'N-CHANNEL JUNCTION FET
VO"VDS VI., VO..'·

100 100
50 f=100MHz
20
T.=25°C- 50
VOS=~H
VgS-O
T. 26 G C
W
10
...!1 I- -
i...
....
!!115 I;::--bos- rIDS 5mA(loss)
los-a.5mA
I,. 2mA
-if.
~" 05 ~
0
&/
Iii
~
~
0.2 1
,..t
!os=5mA{loss)
0.1 i
los=2tnA
005
los-C.5mA
0.02 O. 2
001 1
V
10 12 14 16 18 20 22 24 10 '20 50 100 200 500 10002000 5000 10000
VOl/V), DRAIN-50URCE VOLTAGE qMHz), FREQUENCY.
ciS SAMSUNG SEMICOND~CTOR 280

KSK211 SILICON N-CHANNEL JUNCTION .FET
FM TUNER
VHF AMPLIFIER 80T-23
- NF = 2.5 dB (TVP)
-IV..,= 9.0 mS (TVP)
Gate-Drain Voltage VGOO -18 V

Gate Current IG 10 mA
Junction Temperature T, 150 °C
Storage Temperature Tstg -55",150 °C
I
1. Drain 2. Gale 3. Source
Gate Cut-off Current IGSS VGS= -0.5V. Vos=O -10 nA

Gate-Drain Breakdown Voltage V(BR)GOO IG= -1 OOjAA. Drain -18 V
Drain Current loss Vos= 1 OV. VGs=O 1.0 10 mA
Gate-Source Cuf-off Voltage VGS(off) Vos=10V.lo=ljAA 0.4 4.0 V
Forward Transfer Admittance IYFsl Vos= 1 OV. VGS=O. 9 mS
f=l kHz
Reverse Transfer Capacitance Crss VGo= 1 OV. f= 1 MHz 0.15 pF
Power Gain Cps Voo=10V. f=100MHz 18 dB
Noise Figuer NF i Voo=10V. f=100MHz 2.5 3.5 dB
loss CLASSIFICATION
loss 1.0-3.0 2.5-6.0 5.0-10
cR
••
KSK211 'SILICON N~HANNEL JUNCTIONFET
STATIC CHARACTERISTIC I.-VDS
1/ ...... - Vq~-O I--
/
Vgs=O r-c--+-r VgS""-O 2V
"
~I II
,,3/
·J.,L.v-f--
/ /' VQs =-D.4V
,.
II V/ ..,"-
I
II /V/
r-- V"rTi
VIlS=-O 4V 1
-~"Ld.6J-r- III Vga=. 06V
IX
J..1'
Vga=-O.8V
Vgs--10V
Vgs .,,-1.2V
Ik:: .-- Vgs'"
=.-
a.BV
-12 -0.8 -0.4 0 5 10 15 20 25 1 2 3 4

V,~V), GATE-SOURCE VoslV), DRAIN-SOURCE
VoslV), DRAIN-SOURCE JlOLTAGE
VOLTAGE VOLTAGE
Crss-VOD VIs -VDS

'100 100
50 f='MHZ= 50 f.100MH
T'i· 5•C-
i=
II
Ta=25°C-
20 20
1~-5rriA lIeJ)
Ii '0 10 0'' los· rnA

108=0 SmA
-bfs los=5mA(los~)- 1"-\
'\ ~
108- rnA
i 0.
CI 05
05
~. 0.2
E
U
0. , I'-.... ri' O. 1 --
J
0.05 ~ 0.05
;:
0.02 0.02
0'.0 , 0.0 I
o -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 8 10 12 14
V.o(V), GATE-DRAIN· VOLTAGE V..(V), DARIN-SOURCE VOLTAGE
POWER DERATING I.-V ••

250 10
V~-'o~
r--T,-25'C
I
200
V
Z
\ / I
.~ \ /
iii '50
~
i\ = V /
V, /~
Rs 1OO
II:
W
.
~
'00
\
i \ 1/ / '9 Ii
l' 50
\ / V/ 'V
1\ 1/ . / V...... J7 17 &
\ r..,..... ~ V ~ ~ ~ V 1/1
25 50 75 100 125 150 175 200 225 250 °°
-2 -1 6 -1 2· -0 a -0.4
Tc(OC), CASE TEMPERATURE V..(V), GATE-SOURCE VOLTAGE

Yls ·ID Yis-Vos

20
W
I .~
t--Vos==10V
.
Z"
l- 16
f=1KHz
r-- Ta "'25 c C 20~-+--1---~-+--1---r--+--1---~-1
i0 ~
. Z
a:
...
W
12 ""'~ ~-::--
.....:::~7: ~10"'~- ~~
..
III
Z
......::
~ \05 5
i~_
...
Z
a:
.
0
a: .-Y P""
/'
gls~~r-IDS=5mA(loss
ID8""2mA
05Rlif tm
~
a: (/ 02 los-O SmA
fl
of W >=01~~!m
~
005~
~ II 002~-+--+---~-+--+---r--+--+---r--1
If 0014L--7--~~'~0~'~2--~'4~~'~.~'~8~~20~~2~2~2'
6 10
'ID(mAY, DRAIN CURRENT Vos(Y), DRAIN-$OURCE VOLT AGE
I
Ciss-Vgs IYlsl-los.
1000 100
~-10V_
500
W Vgs 0
r-"-
0 50 yts . Vos-10V
200 Z
l! Vgs=D
I
~.
.... i f=1KHz
Z
100
50 .
0
Ta=21?°C
III
.... a: 20
i3
...
W
.! ~..- .......
"
20
..
III
Z
I-'
.
I-
::>
lE
10
5F=
~
..
0
a:
10
.
it
I
~
a:
fl
" of
~
J!!
02~-t--+--+--+-~---r--~-t--+--+ ~
0'0L-_-0~2--_0~4-_-0~6-_-0~8--_~'-0-_-'~2-_-'~4--_~'-6-_-'~8--~20 40
04 06 2 5 10 20
V,.(V), GATE·SOURCE VOLTAGE 1""s(mA), DRAIN CURRENT
YI., Y,.·1 V• .(offHoss

100 -10
Vgs(off) Voss-l0V
,,0w os~~~ lo-1J.1A
....
oW 50 Vgs=D -5 los, . Vos=10V
ZZ Ta -25°C W Vgs=O
~ ~
iiii
20 "~ T.'"'25°C
00
r- gfs g -2
0( 0(
a: a:
10
W·
~
.....r
~~
0 ,
....
ZZ
~~ 0"
a:
::>
0
:z
-1 V I
OW
a: III ~
;ffi ~ -05
:>
O~
... a:
H 05
....~
~
0
-02
'll
/~
02 ~
1 -01
10 20 50 1 00 200 pOD 1 000 2000 5000 1000a O. 0 .• 10 20 40
~MHz), FREQUENCY lon(mA), DRAIN CURRENT
.
KSK211 SILICON· N~HANNEL JUNCTION FET
VOS-VDS Vis, Vos-'

100 100
60 f-1QOMHz
V08=10V
T. 25'0- ~o
20 - v,,~!±
Ta -25,oC
I
10
~ ;::-bos- -'os""5mA(loss)
_.. ..
los=2mA
·c los-a.SmA
I 1
0.5
~
~~/
~ 02
R;: f::::E:- 108- 6mA{loss)
1
'I
! O. 1 los-2mA
0.05
los==D.5rt\A
0.2
/
0.02
0.0 1 o. 1
V
4. 10 12 14 16 18 20 22 24 10 20 50 100 200 500 1000 2000 5000 10000
VDa(V), DRAIN-SOURCE VOLTAGE {(MHz), FREQUENCY
c8 SAMSUNG SEMICONDUCTOR ;:!84

KSR1001 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING APPLICATION (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit Driver circuit TO-92
• Built in bias 'Resistor (R,=4.7KI2, R,=4.7K(2)
• Complemli!nt to KSR2001
~BSOLUTE MAXIMUM RATINGS (Ta =2S0C)

Emitter-Base· Voltage VEBO 10 V
Junction Tem'perature Tj 150 ·C
1. Emillet' 2. Collector 3. Base
Characteristic Symbol Test Condition Min· Typ Max Unit
Collector-Base Breakdown Voltage BVCBO Ic= 1O /JA le=O 50 V

Collector· Emitter Breakdown Voltage BVceo Ic=100/JA,IB=0 50 V
Collector Cutoff Current ICBO VCB=40V, le=O 0.1 IJA
DC Current Gain hFe Vce=5V,lc=10mA 20
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA,IB=0.5mA 0.3 V
Current Gain-Bandwidth Product fr Vce=5mA,lc=10V 250 MHz
Output CapaCitance Cob VcB=10V,le=0 3.7 pF
f=1.0MHz
Input Off Voltage Viloff) Vce=5V,lc= 1OO/JA 0.5 V
Input On Voltage Vi(on) Vce=0.3V, Ic=20mA 3 V
Input Resistor Rl 3.2 4.7 6.2 KI2
Resistor Ratio Rl/R2 0.9 1 1.1
Equivalent Circuit
Collector (Output)
R,
Base (Input) ----"""""v---.-~
R,
Emitter (Gnd)
' . SAMSUNG SEMICONDUCTOR 285

NPNIEPITAXIAL. SILICON TRANSISTOR
'3' .
INPUT ON VOLTAGE DC CURRENT GAIN
100 ·1000
: VCE -5)7"
50
VC'C O.3V
- R.- 4.7K
4.7K
. RI -
500
30
300
IV ·z
a 1O~. -
~
>.
i i1- v ..
~
100
-
~
I g 50
~ -
1 30 /
05
0.3
/
3 30 50 100 10
0.1 03 0.5 5 10
1 3 S 10 30 50 100 300 SOO 1000

lalmA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
1000 400
VCE-5V
R,=-4.7K
R.-4.7K 3s0
!iii 500
.~
aoc
I 300
I
..
~
2s0 1\\
I I 200 i\.
~0
.. 150
\
f~ 100
I"
50
~
10
( 0.4 0.8 1.2 . 1.8 2.0 25
i'
50. 75 100
\ 125 150 176 200
V~OFF) (V) INPUT OFF VOLTAGE T,(°C), AMBIENT .TEMPERATURE
cIJ SAMSUNG SEMICONDUCTOR 286

SWITCHING APPLICATION (Bias Resistor Built I,n)

• Built in bias Resistor(R,=10KO, R,=10KO)
• Complement to KSR2002

1. Emiller 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (Ta =25 Oe)

Characteristic Symbol Test Condition Min Jyp Max Unit
Collector-Base Breakdown Voltage BVCBO Ic= 1O,..A. IE=O 50 V

Collector-Emitter Breakdown Voltage BVceo Ic=100,..A.la=0 50 V
Collector Cutoff Current ICBO Vca=40V. lemO 0.1 ,..A
oe Current Gain hFe Vce=SV. Ie-SmA 30
Collector-Emitter Saturation Voltage VCE(sat) Ic= 1OmA. la-0.5mA 0.3 V
Current Gain-Bandwidth Product fr Vce=SmA.lc=10V 2S0 MHz
Output Capacitance . Cob Vca=10V.le=0 3.7 pF
f .... 1.0MHz
Input Off Voltage Vi(off) Vce=SV. Ic=100,..A O.S V
Input On Voltage Vi(on) VCE=0.3V.lc=10mA 3 V
Input ·Resistor R, 7 10 13 KO
Resistor Ratio R,/R2 0.9 1 1.1
Equivalent Circuit
Collector (Output)
A.
Base (Input)--.......~.r--.----1
A,
Emitter (Gnd)
c8 SAMSUNG SEMICONDUcroR .287

KSR1002· NPN 'EPITAXIAL· SILICON TRANSISTO~
INPUT ON VOLT4'GE DC CURRENT GAIN

1000
VCE-SV
50 ~~~~~ R.=10K
'. Ra-10K
500
300
.u ~
...
C!I
...a:
Z
/;'
- a:
:> 100
U
g
~
.c:
50
30
/
n, /
0.1 0.: 0.5 1 3 5 10 30 50 100 10
, 3 5 10 30 50 100 300 '500 1000
Ic(mAl, COUECTOR CURRENT
lc(mA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
Vce-SV
R.·10K
1000 I 350
AI -10K
z 30C
0
\y
, I
I iI 250
200
\.
..
0
150
\
t...... 100
I\,
50 i\.
10
o 0.4 0.8 1.2 1.8 2.0
25 50 75 100
\ 125 150 175 200
T,(OC), AMBIENT TEMPERATURE

VdOFF) (VI INPUT OFF VOLTAGE
288
.c8SAMSUNG SEMICONDUCTOR

• Switching circuit, Inverter, Interface. circuit Driver circuit TQ-92
• Built in bias Resistor(R.=22KO, R,=22KO)
Char!lcteristic Symbol Rating Unit

Junction Temperature· Tj 150 °C
Storage. Temperature Tstg -55-150 °C
ELECTRICAL CHARACTERISTICS (Ta = 25° C)
Charact".lstlc Symbol Test Condition Min

Typ Max Unit

•
,
Collector-Base Breakdown Voltage BVcBO le=10jiA,le=0 50 V
Collector-Emitter Breakdown Voltage BVeeo le= 1OOjiA, 18=0 50 V
Collector Cutoff Current leBO Vi;a=40V, le=O 0.1 jiA
DC Current Gain hFe Vee=5V, Ic=5mA 56
Collector-Emitter Saturation Voltage Vce(sat) Ic= 1OmA, 18=0.5mA 0.3 V
Current Gain-Bandwidth Product fr Vce=5mA,le=10V 2.50 MHz
Output Capacitance Cob VC8=10V,le=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=5V,le=100jiA 0.5 V
Input On Voltage Vi(on) Vce=0.2V, Ic=5mA 3.0 V
Input ReSistor R, 15 22 29 KO
Equivalent Circuit
Collector (Output)
R,
Base (Input) ---""",/---,---i
R,
~---f Emitter (Gnd)

KSR1003 :." NPN; EPITAXIAL SILICON TRANSISTOR
INPUT ON VOLTAGE . DC CURRENT GAIN
100 1000
Vee-0.2V Vce-5V
R.-22K 9.1 -221<
Ra-22K R,-22K
50 600
...
c:I
30 Z
300
~
... ~
...
z ~'
~
~
"- .10
I:::> 100
~ U
!;: 6
8 50
./
1 f
r--- - 30
Vi-'"
1
0.1 0.30.6 1 3 6 10 30
10
I
1 3 5 10 30 50 100 300 500 1000
\c(mA) COLLECTOR CURRENT lc(mA) COLLECTOR CURRENT
INPUT OFF VOLTAGE. POWER DERATING

400
VCE-5V
R.-22K
R, -22K 350
1000
30C
!i
I
500
300
~... 250 1\\
B I ~
~ 100
I I..
200
\
.g 150
.U
}
50
30
ill
l
E
100 i\
5Q
~
10 i .\
o 0.... 0.8 1.2 1.6 2.0 25 50 75 100 125 150 175 200
V~OFF) IV) INPUT OFF VOLTAGE T,(°C), AMBIENT TEMPERAniRE
c8 SAM~UNG SEMI~ONDUcroR 290

KSR1004 - NPN EPITAXIAL SILICON TRANSISTOR

• Switching circuit, Inverter. Interface circuit Driver circuit T0-92
• Built in bias Resistor(R, =47KfI, R,=47KfI)
ABSOLUTE MAXIMUM-RATINGS (Ta =2S0C)

Collector-Emiller Voltage Vceo 50 V
Emiller-Base Voltage Veao 10 V
Storage Temperature -Tstg -55-150 °C
1 _ Emitter 2. Collector 3_ Base
I
ELECTRICAL CHARACTERISTICS (Ta =25 0 C)
Collector-Base Breakdown Voltage BVcao le= 1 OIolA, IE=O 50 V

Collector-Emiller Breakdown Voltage BVceo Ic=100jlA,la=0 50 V
Collector Cutoff Current _ ICBO Vca=40V, le=O 0.1 jlA
DC Current Gain hFE Vce=5V, Ic=5mA 68
Collector-Emitter Saturation V6itage Vcdsat) Ic=10mA,la=0.5mA 0.3 V
Current Gain-Bandwidth Product fr Vce=5mA,lc=10V 250 MHz
Output Capacitance Cob Vca= 1OV, IE=O 3.7- pF
f=1.0MHz
Input Off Voltage Vi(off) VcE=5V, Ic= 1 OOjlA 0.5 V
Input On Voltage Vi(on) Vce=0.3V, Ic=5mA 3 V
Input Resistor R, 32 47 62 Kfl
Resistor Ratio R,/R 2 0.9 1 1.1
Equivalent Circuit.
R.
Base (Inputt --""-""""V---,-,
R,
' - - - - - I Emitter (Gnd)

KSR100'4 NPNEPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN
INPUT ON VOLTAGE
100 1000
-Vet -5V
Vce-O. 3V R,- 47K
50 R,=47K
R2=47K 500
R.- 47K
30
300
~~
Z ,
10-" C
ell ~
~
W
I·
II:
II: 100 /:
~. '"
U
U
I:> CI 50
1 r--- - --
0.5 30
0.3
0.1 0.3 06 3 5 10 30 50 100 10

3 5 10 3050 100 300 500 1000
lc(mA,. COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
Vce- 5V
R.-47K
1000 Rz-47K 350
..
Z
500 z 30C
II:
I 300
0
~
"- 250 1\\
'U
i
II:
e ..
"
II: 200 ~
M
...
0
100 lJ
2 150
\
il 1\
,
U 50
J 30
100
50
\
j
10
a
i
0.4 0.8 1.2 1.8 2.0 o 25 50 75 100 125 150 175 200'
V~OFF) (VI INP.UT OFF VOLTAGE T,(·.~ AMBIENT TEMPERATURE
c8 SAMSUNG SEMICONDUCJOR 292

KSR1005 NPN EPITAXIAL SILICON TRANSlsroR
, SWITCHING APPLICATION (Bias Resistor Builtin)

• Switching Circuit, Inverter, Interface circuit • TO-92
Driver circuit
• Built in bias Resistor (R,,,,4.7KO, R,=10KO)
Characteristic Symbol ~atlng Unit
Collector· Base Voltage VCBO 50 V

I -55-150 ·C
Storage Temperature Tstg
Collector-Base Breakdown Voltage BVcBo Ic=10I'A,le=0 50 V

Collector-Emitter Breakdown Voltage BVceo Ic=100I'A,le=0 50 V
Collector Cutoff Current ICBO Vce =40V, le=O 0.1 ,.A
DC Current Gain hFe Vce=5V, Ic=5mA 30
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA,le=0.5mA 0.3 V
Output CapaCitance Cob Vce=10V, le=O 3.7 pF
f=lMHz
Current Gain·Bandwidth Product h Vce=10V,lc=5mA 250 MHz
Input Off Voltage Vi(off) Vce=5V,lc=100I'A 0.3 V
Input Resistor R, 32 4.7 6.2 . KO
Resistor Ratio R,/R2 0.42 0.47 0.52
Equivalent Circuit
Collector (Output)
R,
Base (lnputlO---~"""'-r---I
R,
Emitter (Gnd)
..
eSC SAMSUNG SEMICONDUCTOR 293
'NPH t£PITAxIAL· SILICON TRANSISTOR
INPUT ON VOLTAGE DC.CURIIENT GAIN'

100 1000
Vce"'O 3V VCE""5~~
Rl -47K 500 'R 1 "'"47K
50
R2- 1OK R2=1OK
30 300
~ ~
.~
g
10 - --
.."~
Z
100
50
~-
i "'a:a:
;E B 30
~
'C'
...... g
V
J?
:>
i 10
05
.03
37
1
01 03 05 3 5 10 30 50 100 01 0305 3 5 10 30 50 100
1c(mA), COLLECTOR CURRENT lc(mA), COLLECTOR CURRENT

I
INPUT OFF VOLTAGE POWER DERATING
10000 400
5000 VCE-5~,;=
3000 Al 4.7K_ 350
Rz ""'10K_
1000 ~ 0
1\\
30
:c 250
I I \.
1 200
150
\
0
~
i'
..
100
1\
5
3 0
1\
1
0.10.30.5070.91.113151.71.921 25 50 75 100
\ 125 150 175 200
V~OFF)(V),' INPUT OFF VOLTAGE T~·C~ AMBIENT TEMPERATURE


• Switching Circuit, Inverter, Interface circuit T0-92
Driver circuit
• Built in bills Resistor (R,=10KIJ, R,=47KIJ)

Collector Current Ic, 100 mA
Col/ector DiSsipation Pc 300 mW
Storage Temperature Tstg -55-150 ·C·
Collector-Base Breakdown Voltage BVcao Ic=10jAA.IE=0 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=1001olA. la=O 50 V
CollectOr Cutoff Current Icso Vca=40V. IE=O 0.1 lolA
DC Current Gain hFE VCE=5V. Ic=5mA 68
Collector-Emitter Saturatioo Voltage VcElsat) Ic=10mA.la=0.5mA 0.3 V
Output Capacitance Cob. Vca=10V. IE=O 3.7 pF
f=1MHz
Current Gain-Bandwidth Product h VCE=10V. Ic=5mA 250 MHz
Input Off Voltage Viloff) VCE=5V. Ic= 10010lA 0.3 V
Input On Voltage Vilon) VCE=0.3V.lc=1mA 1.4 V
Input Resistor Rt 7 10 13 KO
, Resistor Ratio Rt /R 2 0.19 0.21 0.24
Equivalent Circuit
. Collector (Output!
R,
Base (Input)G---4It/'f;"t--.,--I
R.
Emitter (Gnd)
c8 SAMSUNG, SEMICONDUCTOR 295

J($R1006, NPN EPITAXIAL SILICON TRANSISTOR
100 1000
VCE=5V
Vee-Q 3V A,"" 1OK
R,-10K 500
--
0 A2=47K
R2-47K
0 300
w r-
"
C
11: 100 t=
~
0
~
.
....::> ... 50
i!:
~
!
3
1
./
i
g
30
/
,; i
5
O~ 3-~ 1- r-
1
01 0305 3 5 10 30 50 100 01 03 05 3 5 10 30 50 1,00
Ic(mA), COLLECTOR CURRENT l.,(mA), COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
10000 400
5000
3000
V.cE 5V
R,=10K
R2- 47K r= 350
1000 II 30c
i
Z
25
0 1\'\
Ill: 200
I 150
\
..",f 100
i\'\
50
i\.
1
0103050709111.31.51.7192.1 25 50 75 100
\ 125 150 175 200
V~OI'f)(V), INPUT OFF VOLTAGE T,{OC), AMBIENT TEMPERATURE

SWITCHING APPLICATION (Bias ResisW Built Ill)

• Switching Circuit, Inverter, Interface circuit TQ-92
Driver circuit
• Built in bias Resistor (R,=22KO, Rl=47KO)
Characteristic . Symb$JI Rating Unit

Storage Temperature Tstg -55-150 °C 1. Emitter 2. Collect", 3. Base
Collector-Base Breakdown Voltage BVcBO Ic=lOIlA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=100IolA,ls=0 50 V
Collector Cutoff Current . - Icso Vcs=40V, IE=O 0.1 lolA
DC Current Gain hFE VCE=5V, 'lc=5mA 68
Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA,ls=0.5mA 0.3 V
Output CapaCitance Cob Vcs =10V,IE=0 3.7 pF
f=lMHz
Current Gain-Bandwidth Product fr VCE=5mA.lc=10V 250 MHz
Input Off Voltage Vi(off) VCE=5V. Ic=1001lA 0.4 V
Input On Voltage Vi(on) VCE=0.3V. Ic=2mA 2.5 V
ReSistor Ratio R,/R2 0.42 0.47 0.52
Equivalent Circuit
Collector (Output)
R,
Base (InputlO---~~----Y---l
R,
Emitter (Gnd)

,.KSRi007 NPN EPITAXIAL SILICON TRANSISTOR

1000
l3' VOE"'6t~
R,.=:2!i!i:<
500 -47K
300
I
10 t:-:::-.
~100 ~.
5
I8 50
30
~~ g ,/1/
1 i 10
1
0.1 0 ·0 30 50 100 0.1 0.3 0.5 3 5 10 30 50 100
1oCmAl. COUECTOR CURRENT Ic(mA). COUECTOR CURRENT

10000 400
5000 Vc,-5~,:::::
3000 =::!~~= 350
/ ~ 0
\\
30
.. 250
I
I
I 20
150
0
r\.
\
~. 10b
\
. 3 0
\.
1
0.1 0.3 0.5
I 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 25 50
i
75 100
\ 125 150 175 200
V~OFf)(V), INPUT OFF VOLTAGE T,("CI. AMBIENT TEMPERATURE'

!
c8 SAMSUNG SEMI~ONDUCTOR 298


• Swl.tching circuit, Inverter, Interface circuit Driver circuit TO-92
• Built in bias Resistor (R.=47KIl, R,=22KIl)
ABSOLUTE MAXIMUM RATINGS (Ta =25°C) ,

Emitter-Base Voltage VEOO 10 V
1. Emitter 2, Collector 3, Base

Collector-Base Bteakdown Voltage BVcBo Ic=10jlA,IE=0 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=100jlA,ls=0 50 V
Collector Cutoff Current lcao Vcs=40V, IE=O '0.1 jlA
DC Current Galn hFE VcE=5V, Ic=5mA 56
Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA,ls=0.5mA 0.3 V
Current Gain-Bandwidth Product fy VCE=5mA, 1c=1'OV 250 MHz
Output Capacitance Cob Vcs=10V,IE=0 3.7 pF
t=1.0MHz
Input Off Voltage Vi(off) Vce=5V, 1c=10011A 0.8 V
Input On Voltage Vi(on) Vce-0.3V, Ic=2mA 4 V
Input Resistor R, 32 47 62 KD
Equivalent Circuit
Collector (Output)
A,
Base (Input) - - - " " " " , _.........--1
A,
' - - - - - I Emitter (Gnd)
c8 SAMSUNG SEMICONDueroR 299

DC CURRENT GAIN
INPUT ON VOLTAGE
100 1000
VeE -5V
v.,.=O.3V R.= 47K
50 R,a47K
R2 -22K 500 R.- 22K
0
is 300
~. I
~-
- I
g
100
"
1 1 50 ,
0.5 30
0.3 .
0.1 0.305 3 5 10 30 50 100 10

1 3 5 10
i 30 50 100
IclmA~.COUECTOR CURRENT
~\ . lc(mA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
VCE-5V
R."47K
1000 -- RJ -22K 350
!i
.11' 500 z 30C
~
()
300
I
...~
jj
250 \.\
a:
e
()
is
iii 200 ~
~
0
()
100
~ 150
\
I I~
,
50
J 30 I 100
I 50
10
o 0.4 0.8 1.2 1.6 2.0 o 25
I
50 75 100
\ 125, 150 175, 200
VdOFF) (V) INPUT OFF VOLTAGE T.(·~ _ENT TEMPERATURE .
c8 SAMSUNGSEMICONDUcro~ 300
SWITCHING APPLICATION (Bias Resistor Built In) •

• Switching Circuit, Inverter·, Interface circuit TO-92
Driver circuit
. • Built In bias Resistor (R,.,4.7KO)
ABSOLUTE MAXIMUM RATINGS, (Ta =25°C)

Storage Temperature T8tg -55-150 ·C 1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (Ta= 25°C)
Collector-Base Breakdown Voltage BVcao Ic= 100,.u\, le=O 40 V

Collector-Emitter Breakdown Voltage BVceo Ic=1mA,la=0 40 V
Collector Cutoff Current ICBO Vca=30V, le=O 0.1 ,.u\
DC Current Gain hFE Vce=5V, 1c=1mA 100 600
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA,la=1mA 0.3 V
Output Capacitance Cob Vca=10V,le=0 3.70 pF
f=1MHz
Current Gain-Bandwidth Product fT Vce=10V,lc=5mA 250 MHz
Input Resistor R 3.2 4.7 6.2 KS2
Equivalent Circuit
Collector (Output)
R
Base (lnputlO----¥r/'.~-__l
Emitter (Gnd)

KSR1009 . NPH ·EPITAXIAL
, . SILICON
. /
TRANSISTOR
10000
5000 ~~;.~~t 50C

3000
~,'000
I:
Ii
30
J 100
10
50 5
30 3
10
0.1 0.3 0.5 1 3 5 10 30 50 100 1 3 5 10 30 50 100 300 5001100
POWER DERATING
400
350
\\
~
\
1\
0
1\
25 50 75 100
\ 125 150 175 200
ciS SAMSUNG SEMICONDUCTOR .302

SWITCHING APPLICATION (Bias R.sistor Built In)

Driver circuit
• Built in bias Resistor (R=10KOj
Collector-Base Voltage . VCBO 40 V

Collector-Emiiter Voltage VCEO 40 V
Collecter Dissipation Pc 300 mW
Storage Temperature Tstg -55.-150 °C 1. Emitter 2. CoBeeter 3. Base
ELECTRICAL CHARACTERISTICS (Ta 25 °C) =

Collector-Base Breakdown Voltage BVCBO le= 1001lA, IE=O 40 V

Emitter-Emitter Breakdown Voltage BVeEo IE=1mA,la=0 40 V
Coliector Cutoff Current leBO Vca ""30V, IE=O 0.1 jAA
DC Current Gain hFE VCE ""5V,lc=1mA 100 600
Collector-Emitter Saturation Voltage Vee(sat) le=10mA,la=1mA 0.3 V
Output Capacitance Cob Vea=10V,IE=0 3.7 pF
f=1MHz
Current Gain-Bandwidth Product fr VCE =10V,le=5mA 250 MHz
Input Resistor R 7 10 13 KO
· Equivalent Circuit
Collector (Outputl
R
Base (InputllO---~.,.,..._ _~
Emitter (Gndl
c8 SAMSUNG SEMICONDUCTOR ~03

KSR1010 NPNEPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN COLUOCTOR-EMITTER SATURATION VOLTAGE

10000 1000
leila 1011
5000
VeE 5V
R 10K
.. 50C
R 10K
1
3000
300
z
01'
" 1000
I z
0
100
t2 1=
c
lI!soo II: 50
~ 300
i:!
:i 30
l! ,
1 '00
i 10
!
50 J
30 ,-:-
10
0.1 0.30.5 1 3 5 10 30 50. 100 ,1 3 5 10 30 50 100 300 500 1000
1c;(mA), COLLECTOR CURRENT 1c(mA), COUE;CTOR CURRENT
POWER DERATING
400
350
I:
~ 200
\
\
r\
2 150
\
~ \\
~ 100
50
~
25 50 75 100
\ 125 150 175 200
T.I·C~ AMBIENT TEMPERATURE


• SWitching Circuit, Inverter, Interface circuit TO-92
Driver circuit
• Built in bias Resistor (R=22KO)

Storage Temperature Tstg -55-150 °C 1. Emitter 2. Collector 3. Base
Collector-Base Breakdown Voltage BVceo Ic=100flA, le=O 40 V

Emitter-Emitter Breakdown Voltage BVceo le=1mA,18=0 40 V
Collector Cutoff Current lceo Vce=30V, le=O 0.1 !lA
DC Current Gain hFE Vce=5V, 1c=1mA 100 600
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA, 1~=1mA 0.3 V
Output Capacitance Cob Vce=10V.le=0 3.7 pF
f=1MHz
Current Gain-Bandwidth Product h Voe=10V.lc=5mA 250 MHz
Equivalent Circuit
Collector (Output)
R
Base (Input).o--_~~_ _ -I
Emitter (Gnd)
c8 SAMSUNG· SEMICONDUCTOR 305


• Switching Circuit, Inverter, Interface circuit TO-92
Driver circuit
Collector-Base Voltage VeBo 40 V

Collector-Emitter Voltage VeEO 40 V
ELECTRICAL CHARACTERISTICS (Ta =25°("
Characteristic Symbol Test Condition Min Typ 'Max Unit
Collector-Base Breakdown Voltage BVCBO Ic=100"A,IE=0 40 V

Emitter-Emitter Breakdown Voltage BVcEo IE=1-mA,IB=O 40 V
Collector Cutoff Current ICBO VcB =30V, IE=O 0.1 "A
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA, IB=1mA' 0.3 V
Output Capacitance Cob VcB =10V,l e=0 3.7 pF
f=1MHz
Current Gain-Bandwidth Product fr Vce=10V,lc=5mA 250 MHz
Input Resistor R 32 . 47 62 KIl
Equivalent Circuit
Collector (Output)
R
Base (lnput:!O----4I/'.'N--_-!
Emitter (Gnd)
c8 SAMSUNG SEMicONDUCTOR
306

• Built in· bias Resistor(R,= 2.2KIl, R,=47KIl)

Collector· Emitter Voltage VCEO 50 V
1. Emitter 2. ColJeclor 3. Base
·ELECTRICAL CHARACTeRISTICS (Ta =25 0 C)
Collector-Base Breakdown Voltage BVcEo Ic=10jAA,IE=0 50 V

Collector-Emitter Breakdown Voltage BVCEO Ic= 1 OOJAA, IB=O 50 V
Collector Cutoff Current ICBO VcB=40V, IE=O 0.1 JAA
DC Current Gain hFE VCE=5V, Ic=5mA 68
Collector-Emitter l?aturation Voltage Vee(sat) Ic= 1 OmA, IB;"0.5mA 0.3 V
Current Gain-Bandwidth Product fr VcE =5mA, Ic;=10V 250 MHz
Output Capacitance Cob VCB""10V,IE=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) . Vce=5V,lc=100jAA 0.5 V
Input On Voltage Vi(on) VCE=0.2V, Ic=5mA 1.1 V
Input Resistor Rl 1.5 2.2 2.9 KO
Resistor Ratio Rl/R2 0.042 0.047 0.052
Equivalent Circuit
Collector (Output)
R,
Base (Input) --~"""_-r--l
R,
'--_~ Emitter (Gnd)
.-c8 SAMSUNG SEMICONDUCTOR 307

'KSR1014 NPN EPITAXIAL. SIUCON TRANSISTOR

• Switching circuit, Inverter. Interface circuit Driver circuit TO-92
.• Built in bias Resistor(R,';;4.7Kfl, R,=47Kfl)
• Complement to KSR2014 .
Collector· Base Voltage Vcao 50 V

Collector· Emitter Voltage Vceo 50 V
Emitter·Base Voltage VeBO 10. V
Junction Temperature Tj 150 'c I
Storage Temperature Tstg -55-150 . 'c

ELECTRICAL CHARACTERISTICS (T. =25°C)
Collector-Base Breakdown Voltage .BVcEO Ic=10jlA.le=0 50 V.

Collector:Emitter Breakdown Voltage BVceo Ic=100jlA. la=O 50 V
Collector Cutoff Current Iceo Vea=40V. IE=O 0.1 ,..A
DC CUTrent Gain hFe Vce=5V. Ic=5mA. 68
Collector-Emitter Saturation Voltage Vcelsat) Ic=10mA, la=0.5mA 0.3 V
Current Gain-Bandwidth Product h VCE=5mA.lc=10V 250 MHz
Output Capacitance Cob Vca=10V.I.=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=5Y·lc=100,..A 0.5 V
Input On Voltage Vi(on) Vce=0.2V. Ic=5mA 1.3 V
Input Resistor R, 3.2 4.7 6.2 . KO
Resistor Ratio R,/R 2 0.09 0.1 0.11
Equivalent Circ;uit
eoueetor (Output)
Base (Input) ---"""",,_-.---1
R,
1.-.---1 Emitter (Gnd)
C8 SAMSUNG SEMICONDUC1"OR 308


• Switching Circuit, Inverter, Interface circuit SOT·23
Driver circuit
• Built in bias Resistor (R.=4.7KO R,=4.7KO)
Coliector·Base Voltage VCBO -50 V

Coliector·Emitter Voltage VCEO 50 V
Storage Temperature Tstg -55-150 °C 1. Base 2. Emitter 3. Collector
Collector· Base Breakdown Voltage BVcBo Ic =10,..A, IE=O 50 V

Collector· Emitter Breakdown Voltage BVcEO Ie= 1 O(),..A, IB=O 50 V
Collector Cutoff Current ICBO VCB=40V, IE=O 0.1 ,..A
DC Current Gain hFE VCE=5V, .lc=10mA 20
Collector· Emitter Saturation Voltage VCE(sat) Ic=10mA,IB=0.5mA 0.3 V
Current Gain·Bandwidth Product fr VCE=5mA,lc:=10V 250 MHz
Output Capacitan.:e Cob Vce=10V,IE=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) VCE=5V,lc=100,..A 0.5 V
Input On Voltage Vi(on) VcE =0.3V, Ic=20mA 3 V
Input Resistor R1 3.2 4.7 6.2 KO
Resistor Ratio R1/R2 0.9 1 1.1
Equivalent Circuit
Collector (Output) Marking
R,
Base (Input)O----IItI'\f/tr---,--t
R,
Emitter (Gnd)
c8 SAMSUNG SEMiCoNDUCTOR 309

~SA1101 NPH, EPITAXIAL SILICON TRANSISTOR
INPUT ON VOLTAGE DC CURRENT ~AIN

100 1000
, Vce-5V
R.- 4.7K
50 R.- 4.7K
SOl)
30
~~ 10
. a;
.5 ./
,,;
,g
I
'" 05 30
0.3 L
0:1 0305 3 5 10 30 50 100 10
1 3 5 10 30 50 100 30Q SOl) 1000
1c(mA). COUECTOR CURRENT
Ie (mAl. COUEcroR CllliRENT
INPUT OFF VOLTAGE . POWER DERATING

32a
VCE-SV
R,-4.7K
,I R,-4.7K
1000 230
0
Ii 500
"' I
1 300 I
I\.
I
U
""
100
50
r\.
"
} 30
40
'\
10
o 08 1.2 18 20 a 25 50 75 100
'\ 125 150 175 200
T.r'Cl. AMBIENT TEMPERATURE

V~OFFI (\II INPUT OFF VOLTAGE
c8 SAMSUNG SEMICONDUCTOR 31 9

• Switching Circuit, Inve!'ler, Interface circuit
Driver circuit
SOT-23
• Built in bias Resistor (R,=10KI1, R,=10KIl)
Collector-Base Voltage Veoo 50 V

I
I
Emitter-Base Voltage VEoo 10 V i
CharaCteristic Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voitage BVeoo Ic= 1OIlA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVeEo Ic=100IlA,le=0 50 V
Collector Cutoff Current Icoo Vce=40V, IE=O 0.1 .1lA
DC Current Gain hFE VCE=fN, Ic=5mA 20
Collector-Emitter Saturation Voitage VCE(sat) Ic=10mA,le=0.5mA 0.3 V
Current Gain-Bandwidth Product fr VCE=5mA,le=10V 250 MHz
Output Capacitance Cob Vce=10V,IE=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) VCE=5V. Ic=1001lA 0.5 V
Input On Voltage Vi(on) VCE=0.3V,le=10mA 3 V
Input Resistor R, 7 10 13 KI1
Equivalent Circuit Marking

Collector (Output)
R,
Base (InputlO---4tIt;rv-...,,---i
R,
EmItter (Gnd)

KSA1102 NPN EPITAxiAL SILICON. TRANSISTOR
100 1000
VeE 5V
Vce=O.3V R. 10K
50 A I -10K Rl 10K
R2-1ot( 500
0
0-
5
3
1
_... ./
..... 1-'
o. 5 30
0,3 /
01 0305 10
3 5 10 30 50 lOO
30 50 100 300 500 1000
lc(mA~ COLLECTOR CURRENT Ie (mA). COLLECTOR CURRENT
INPUT OFF VOLT AGE POWER DERATING

320
VcE =5V
1000 II A,=10K
R1 =10K 230
Z 240
I i
'" ,
200
15 160
t~ ·120
l\.
1,so \.
'\
10
o 0.4 08 12 16
V4OFF) (V) INPUT OFF VOLTAGE

2.0
40
o 25 ~
T,('~
75
-"
100 125
·AMBIENT TEMPERATURE
150 175 200


• Switching Circuit, Inverter, Interface circuit
Driver circuit
50T-23
• Built in bias Resistor (R.=22KU, R,=22KIl)
Coliector·Base Voltage VeBO 50 V

Collector· Emitter Voltage VeEo 50 V
'1. Base 2. Emitter -3. Collector

I
Collector-Base Breakdown Voltage BVcBO Ie'" 1 O~A. IE"'O 50 V

Collector-Emitter Breakdown Voltage BVcEO Ic= 1 OOJ.lA. la=O 50 V
Collector Cutoff Current ICBO Vca"'40V. IE=O 0.1 J.lA
Collector-Emitter Saturation Voltage VCE(sat) Ic"'10mA.la=0.5mA 0.3 V
Current Gain-Bandwidth· Product h VCE"'5mA.lc=10V 250 MHz
Output Capacitance Cob Vca'" 1 OV. IE"'O 3.7 pF
f"'1.0MHz
Input Off Voltage Vi(off) VCE"'5V. Ic'" 1 OOJ.lA 0.5 V
Input On Voltage Vi(on) VCE"'0.2V. Ic=5mA 3.0 V
Input Resistor R, 15 22 29 KIl
ReSistor Ratio R,/R2 0.9 1 1.1

Collector (Outputl
R.
8ase (Inputlo---4V'o,.,....--,,---j
R,
Emitter (GndJ
c8 SAMSUNG SEMICONDUCTOR· 313

INPUT ON.YOLTAGE DC CURRENT GAIN

100 1000
VeE O.2V VCE=5V
R, -22K R,=22K
Rz-22K R.-22K
50 500
30 300
w
"
c I /~
!:;
0
>
I-
...30
:::>
10
Iil 'oo
!!
Z
~
5 i!lO ,
/. 30
1
0.1 0.3 0.5 - i--"
3 5
Ie (mAl, COLLEC'IOR CURRENT
10 30 50 100
10
3 5 10 30 50 100
Ie (mAl, COLLEC'IOR CURRE~T
300 500 1000

VCE-5V
320
R,-22K
Ra-22K
1000 230
I-
Z
50~ i!i. 240
W
a:
a: 300 ~ 200
:::>
"a:0 I :'\.
I-
"...... I I~ 180
"
W 100
0 120
"i ~
50
~ 'I\.
~ 80
30
'\
10
o 0.4 08
, 12 1.8 20
40
.0 25 50 75 100
'\ 125 150 175 200
V~OFF) (V) INPUT OFF VOLTAGE T,("O), AMBIENT TEMPERATURE

KSR1104 NPN· EPITAXIAL SILICON TRANSISTOR
SWITCHING ·APPLICATION .(Bias Resistor Built In)

• Switching Circuit; Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,=47KO, R,=47KU) SOT-23
• qomplement to KSR2104 .

Collector Current Ie 100 mA.
Collector-Base Breakdown Voltage BVCBO Ic= rOjAA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=100jAA,IB=0 50 V
Collector Cutoff Current ICBO VCB=40V, IE=O 0_1 .jAA
Collector-Emitter Saturation Voltage VCE(sat) Ic= 1 OmA, IB=O_5mA 0.3 V
Current Gain-Bandwidth Product h VCE=5mA, Ic-10V 250 MHz
Output Capacitance Cob VCB=10V, IE=O 3.7 pF
f=1.0MHz
Input Off Voltage Vi (off) VCE=5V,lc=100jAA 0.5 V
Input On Voltage Vi(on) VCE=O.3V, Ic=5mA 3 V
Input Resistor R1 32 47 62 KG
Equivalent Circuit
Marking
Collector (Output)
R,
Base (Input)O----JY\of!lr--,.---j
R,
Emitter (Gnd)

KSR1104 NPN EPITAXIAL SILICON tRANSISTOR
100
INPUT ON VOLTAGE
1000
.
DC CURRENT GAIN
VeE 5V
Vce-O.3V Rl -47K
50 Rl""47K A, 47K
A, 47K 500
30
10 - i"""
1
- 30
05
.0.3
10
0.1 03 0.5 3 5 10 30 50 100
1 3 5 10 30 50 100 300 500 1000
Ic(mA~ COLLECTOR CURRENT Ie (mA), COUECIOR CURRENT

Vce=5V
R,=47K
320
"
R2 -47K
1000 230
0- 500 z 240
i
iii0: II
300
,~ 200
I ~
I. I
180
"'"
100
0 120
I
t)
50
i 30
0
'\
0
10
o 08 12 18 20 o 25 50 75 100
'\ 125 150 175 200
V~OFF) (V) INPUT OFF VOLTAGE T.(·C~ AMBIENT TEMPERATURE

KSR1105 ~ NPN EPrrAXIAL SILICON TRANSISTOR.

• Switchi'ng Circuit,. Inverter, Interface circuit 50T-23
Driver circuit
• Built in bias Resistor (R •• 4.7KO, R.=10KOI

Emitter-Base Voltage . VeBO 10 V
Collector Current (max) Ic 100' mA
Tj ·C
Junction Temperature 150
.
•
Storage Temperature Tstg '-55-150 ·C . 1. Base 2. Emitter 3. Coliector
Characteristic Symbol Te.t Con~ltlon Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic= 1OIlA, le-O 50 V

Collector-Emitter .Breakdown Voltage BVceo le= 1 OO,..A, la=O 50 V
Collector Cutoff Current IcBO Vca=40V, le=O 0.1 IlA
· Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA,ls=0.5mA 0.3 V
Output CapaCitance Cob Vca=10V,le=0 3.7 pF
f=1MHz
Current Gain-Bandwidth Product fr Vce=10V, Ic=5mA . 250 MHz
Input Off Voltage Vi(off) Vce=5V, Ic=1001lA 0.3 'V
Input On Voltage VI(on) Vce=0.3V, Ic=20mA 2.5' V
Input Resistor R, 32 4.7 6.2 KO

Coli ector (Output)
R,
Base (Input)~----'w..>--..,-l
R,
Emitter (Gnd)
317
c8SAMSUNG SEMICONDUCTOR'
,':,NPN' EPlTAXtAt:'SILICON TRANSISroR
''1 " '
..
' ','
DC CURRENT'GAIN ,NPUT ONVOLTAGf;"

1000 100
VCE~,0,3V
500 50 R,-4.7K
R2 10K
300 30
'~
- r'-+-HH+~--~~~
..
w
...
Z
w
II:
100
50
i... ' >10
B 30 "
~ 3
8
i 10
v ~
'c
,.
-2
05
0,3
'1~0~,1~~0~,3~U.~--~3~~5~~10~.--~30~~50~~'00 0,1 03 05 3 5 10 30 50 100
Ie(mA~ COUECTOR CURRENT IclmA~ COUECTOR CURRENT

INPUT 'OFF VOLTAGE • POWER DERATING
10000 320
5000 VCE-5V
3000 R,=4.7K 280
&,,-tOK
1000 0
0
L 0
.\..
0
'I\.
0
'r\.
5
3
'\
0
1
0.1 0.3
.1
0.5 0.7, 0.9 1.1 13 1.5 1.7 1.9 2.1 o 25 50 75 lQ()
\ 125 150 175 200
V~OFF)(V), INPUT OFF VOLTAGE T,('C~ AMBIENT TEMPERATURE
cas SAM$UNG SEMICONDUCTOR 318

KSR1106 NPN EPITAXIAL SILICON TRANSISTO,R

• Switching Circuit, Inverter, Interface circuit SOT-23
Driver circuit
• Built In bias Resistor (R.=10KO, R,=47KO)
ABSOLUTE MAXIMUM· RATINGS (Ta =25°C)
Collector-Base Voltage VCf1() 50 V

Collector-Emitter Voltage Veeo 50 V
•
Storage Temperature Tstg -55-150 ·C 1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (Ta=2S0C)
Collector-Base Breakdown Voltage BVceo Ic= 1O,.A, le=O 50 V

Collector-Emitter Breakdown Voltage BVcEO le= 1OO,.A, le=O 50 V
Collector Cutoff Current ICBO Vce=40V, le=O 0.1 ,.A
, DC Current Gain hFE Vce=5V, Ic=5mA 68 ,
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA, le=0.5mA 0.3 V
Output CapaCitance Cob Vce=10V,le=0 3.7 pF
t .. 1MHz
Current Gain-Bandwidth Product h Vce==10V, Ic=5mA 250 MHz
Input Off Voltage Viloff) V~e=5V, Ic=100,..A 0.3 V
Input On Voltage Vilon) Vce=0.3V,lc=1mA 1.4' V
Input Resistor R, 7 10 13 KO
Equivalent Circuit Marking,

Colleclor (Output)
R,
Base (InputlO---"""'~-,----i
R,
Emitter (Gnd)
319
KSR1106 NPN EPITAXIAL SILICON TRANSISfOR

100 1000
VeE O.3V
so R, 10K SOO
R "'47K
0 300
Ul-
~
i...
I
01-- OJ 100 1--
5
..!i
:I 50
~ :>
3E 3 u 30
L g
~
,.I 1 i 10
./
o. 5
o. 3 3-
0.1 0.30.5 3 5 10- 30 50 100 - 10!-:.I:--"'-::0'-::3"'Otc5!'-'"'-';--~3""""'5"""J..I'-!;0:--"""3:t0:'-:':50:!-'-":':!00·
IclmA), COLLECTOR CURRENT Ic(mA~ COI.LECTOR CURRENT

10000 320
5000 VCE""5~~
Rl=1~~
3000 R2 -47K 280
I
1/
i
1000 z 240
200
I '"
~
180 I"
~ 120
~
0 ~ 80 1\
5
3 0
1 '\ -
1
0.1 0.3 05 07
Y~OFF)(V),
09 1.1 13
INPUT OFF VOLTAGE

15 1.7 19 21 o 25 50
T~·C}.
75 100
"
AMBIENT TEMPERATURE
125 150 175 200

KSR1107 NPN EPITAXIAL SILICON TRAN$ISTOR

• Switching Circuit, Inverter, Interface circuit S01-23
. Driver circuit
• Built in bias Resistor (R,,,,22KO, R,,,,47KOI

Junction Temper~ture Tj °C
•
150
1 Base 2. Emitter 3 Collector
Collector-Base Breakdown Voltage BVcBo Ic= 1 OJAA. 'E=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=100JAA,le=0 50 V
Collector Cutoff Current ICBO Vce=40V. 'E=O 0.1 jAA
DC Current Gain hFE VCE=5V. Ic=5mA , 68
Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA.ls=0.5mA 0.3 V
Output Capacitance Cob Vcs= 1OV. IE=O 3.7 pF
f=1 Mliz
Current Gain-Bandwidth Product fr VCE=5mA. Ic=10V 250 MHz
Input Off Voltage Vi(off) VcE =5V, Ic=100jAA OA V
Input On Voltage Vi(on) VCE=0.3V. Ic=2mA 2.5 V

Colieclor (Oulpul)
A,
Base (Inpul)lo---4tI>."""-r--I
R,
Emlller (Gnd)
=8 SAMSUNG SEMICONDUCTOR. 321

C\I
C\I
l-
C')

U)
z Vee- O.3V ..,
'000
t= VCE-5~t
~
Rl=22K 500't-- R l -22K
, -47K
...
o
R2=471<
300
~ ~
z g CO 100
Ii 'I::::
>
iB .'30'/=
8::::i i
~
~
8
0
I i )I
en
o
...~ >
0,5
0,3
E
.F
3
t1tt1j
~
1
0,' 0.30.5 3 5 10 30 50 100 0,' 0.30.5 3 5 10 30 50 100
Ic:ImA), COUECTOR CURRENT fc:(mA), COlLECTOR CIlIIRENT"
A. INPUT OFF VOLTAGE POWER'DERATING
W '10000 320
, 5000
Z 3000 ~~2~~-= 280 a:
A.,
B
... 47K-
Z , '000 I ~ 240
li500 ~ ::l
lI!3OO ~200 C
§
"
OJ
I i5 Z
I
~::I
w ': 2
160
\. .
o
o
8
30 ~ 120
E
iw
r\.
} ' 10 l 80
en
",
; '\
l 40 ,~
,..., 1 I o
::l
en
o
,.. 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 25 50 75 100 125 150 175 200
....: ~
V,(OfF)(V), INPUT OFF VOlTAGE T.l°C). _ 1EIIIPERATURE
,It
fA, qp
.....
'~i~' .

Drivdr circuit
• Built in bias Resistor (R.=47KO, R,=22KO)
Collector-Base Voltage VCe£) 50 V

Emitter-Base Voltage VEe£) 10 V
•
Storage Temperature Tstg -55-150 °C 1. Base 2: Emitter 3. Collector
Collector-Base Breakdown Voltage BVCBO Ic= 1 0j.iA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic= 1OO/i A,ls=0 50 V
Collector Cutoff Current ICBO Vcs=40V, IE=O 0.1 j.iA
Collector-Emitter Saturation .voltage Vcdsat) Ic.= 1OmA, Is=0.5mA 0.3 V
Current Gain-Bandwidth Product fr VCE=5mA,lc=10V 250 MHz
Output CapaCitance Cob Vcs=:10V, IE=O 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) VCE=5V, Ic= 1 OOj.iA 0.8 V
Input On Voltage Vi(on) VCE=0.3V, Ic=2mA 4 V
Equivalent Circuit
Marking
Collector (Output)
A,
Base (Jnput)o---4lI'o~---'r---t
A,
Emitter (Gnd)
c8 SAMSUNG SEMICONDucToR
323
. KSR1108 '·NPNEPITAXIAL SIUCON TRANSISTOR

100 1000
VCE=5V
Vce=O.3V R,=47K
A,=47K Rt 22K:
50
A2= 2K 500
..
30
300
I..l 1Df-- I
Iil ./
'3
I 100
e 8
I
:$
i 50
7
J7
0.5
30
0.3
0
0.1 03 OS 3 5 10 3D 50 100
3 5 10 30 50 100 300 500 1000
1c:(mA), COLLECTOR CURRENT Ie (mAl. COLLECIOR CURRENT

320
VOE=5V
R,=47K
Ftz-22K
1000 230
0
I
!/ 0
1'\
~.
0
0 "
0 I
40
"'\
0
o 0.8 12 1.6 2.0 o 25 50· 75 100
'\ 125 150 175 200
V~OFFI (VI INPUT OFF VOLTAGE T,("C), AMBIENT TEMPEIIATUAE
324
KSR1109 NPN EPITAXIAL SILICON TRANSlsroR
SWITCHING APPLICATION (Bias Resistor Built In}

• Switching Circuit, Inverter, Interface circuit $OT·23
: Driver' circuit .
• Built in bias Resistor (R=4.7KO)

••
1. Base 2. Emitter;3. Collector
ELECTRICAL CHARACTERISTICS (Ta =25 OC)

Collector-Base Breakdown Voltage BVcso Ic =100,..A, IE=O 40 V

Collector-Emitter Breakdown Voltage BVCEO Ic"1mA,IB=0 40 V
Collector Cutoff Current , ICBO VCB=30V, IE"O 0.1 ,..A
DC Current Gain hFE VCE=5V, Ic=1mA 100 600
Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA, IB=1mA 0.3 V
Output Capacitance Cob Vca=10V,IE-0 3.70 pF
f==1 MHz
Current Gain-Bandwidth Product fT VcE =10V,lc=5mA 250 MHz
Input Resistor R 3.2 4.7 6.2 KO
Marking
Equivalent Circuit
Colleclor (Oulpul)
R
Base (lnpul}}O---4<AfV--_--l
Emiller (Gnd)
c8 SAMSUNG SEMIC~NDUcrOR 325

1<SR1109,··' ", : NPN"EPrrAXIAL SILICON TRANSlsroR
DC CURRENT GAIN
1000 _ _
10000 _ _ • VeE 5V
5000 R 47K
3000
!~lOO01"--~"~!lII!I~!!I!IIIII!~~"!l1
::
1 ,00
_ __
",
50
30
3 5 10 30 50 100 300 500 1000
lc(mA), COLl.eCTOA CURRENT lc(mA), COLI.ECTOR CURRENT '
POWER DERATING
320
280
·z 240
0
~
ai5
200
l\.
15
;,
180
2
~
120 I".
E
l 80 r\.
. 40
'\
o 25 60 76 100
'\125 150 175 200
T,(°C~ AMBIENT TEMPERATURE
326
SWITCHING APPLICATION (Bias Resistor-Built In)

• Switching Circuit, Inverter, Interface circuit -SOT-23
Driver circuit
• Built in bias Resistor (R=10K(l.)
ABSOLUTE. MAXIMUM RATINGS (Ta=25°C)
Char.acteristlc Symbol Rating Unit

Emitter-Base' Voltage VeBO 5 V
•
Collector-Base Breakdown Voltage BVCBO Ic"'100~A. le=O 40 V

Emitter-Emitter Breakdown Voltage BVeEO le=-lmA.ls=O • 40 . V
Collector Cutoff Current leBO Vcs-30V. le=O 0.1 ~
DC Current Gain hFe VCE=5V. Ic=lmA . 100 600
Collector-Emitter Saturation Voltage Vedsat) Ic=10m~. Is=lmA 0.3 V
Output Capacitance Cob Vca= 1OV. 'E=O 3.7 pF
f=lMHz
Current Gain-Bandwidth Product fT VCE=10V.lc=5mA 250 MHz
Input Resistor , R 7 10 13 KO

Collector (Output)
R
Base (Input:IO---"N_-~
Emitter (Gnd)

<Xl
a: "(\I
C')
~
U5 DC CURRENT GAIN
1000
z l5000O O 0 0 I,"-10K
l_ VCE._5V leila"'" iOI1
~
50C I I 11111111 I I1IIIIII I A=10K
w
"3000
~ 300
I- "g
~ ~1~~ll~lI~~~IIII!I~-I",!!!l1
Z '"1000 ~
Ii .
;::
1001:::::::
8:::::i I:: .
a:
:0
....
50
30
~+H~-H~m-Tnmlll
OJ
8 S
U5
....c __
1';~
g
!'"
~
10
-a~..
10' ! ! I ! II!! I I II! 111 I J J!!! II
01 0.3 0.5 1 3 5
J
10 30 50 100 3 5 10 30 50 100 300500 1000
1c(rnA), COLLECTOR CURRENT

POWER DERATING
w
z
a..
32' l
28' l
. a:
z Z
@
241 l
B
~ 200 l ~
c
is
~ z
1 l
"f
f 12'
161
l
\. 8
~
"I 80l
l
"'\ (J)
~
'\ z
,..,..
Q 25 50 75 100 125 150 175 200
~
(J)
T.(°C), AMBIENT TEMPERATURE :E
Ii: ~
I qp
" ~t~.~·

• Switching Circuit. Inverter. Interface circuit 80T-23
Driver circuit
Co!lector-Base Voltage VCBO ' 40 V

Storage Temperature Tstg -55-150 °C 1. Base 2. Emitter 3. Collectdr
Collector-Base Breakdown Voltage BVcBO Ic=1001olA.le=0 40 V

Emitter-Emitter Breakdown Voltage BVcEo IE= 1mA, IB=O 40 V
Collector Cutoff Current lceo Vca=30V. le=O 0.1 ,..A
Collector-Emitter Saturation Voltage Vce/sat) Ic=10mA,IB=1mA 0_3 V
Output CapaCitance Cob VcB ;"'10V,le=0 3.7 pF
f=1MHz
Current Gain-Bandwi(jth Product h Vce=10V, Ic=5mA 250 MHz
Input ReSistor R 15 22 29 KO

Collector (Output I
R
Base IInput)'~--4\IIo"r---i
EmItter (Gnd)
c8 SAMSUNG S~MICONDUCTO~ 329

KSR1t12 N'PNEPITAXIAL SILICON TRANSlsroR

Driver circuit
• Built in bias Resistor (R=47KIlJ
ABSOLUTE MAXIMUM RATINGS (Ta = 25 0 C)
Characteristic Symbol Rating Unit'

,Emitter-Base Voltage Ve~ 5 V
Collector Current Ic . 100· mA
Storage Temperature Tstg -55-150 DC 1. Base 2. Emitter 3. Collector
""
Characteristic Symbol Test Condition, Min Typ Max Unit
.Collector-Base Breakdown Voltage BVcBO Ic= 1OO,..A, le=O 40 V

Emitter~Emitter Breakdown Voltage BVceo le= tmA, le=O 40 V
Collector Cutoff Current ICBO Yce=30V, le=O 0_1 ,..A
DC Current Gain hFe Vce=5V,lc=lmA 100 600
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA,18=lmA 0.3 ' V
Output Capacitance Cob Vce=10V, le=O 3.7 pF
f=lMHz
Current Gain-Bandwidth Product fr Vce=10V, Ic=5mA 250 MHz
Input F:lesistor R 32 47 62 KO

Collector (Output)
R
Base (lnput)'O---~"'r----l
~mltter (Gndl
.c8 SAMSUNG SEMICONDUqOR ,330


• Switching circuit, Inverter. Interface circuit Driver circuit 50T-23
• Built in bias Resistor(R,:2.2KU, R,:47KU)

Collector-Emitter Voltage ' VCEO 50 V
Emitter-Sase Voltage VEBO 10 V
Storage TeJl1perature Tstg -55-150 ·C
ELECTRICAL CHARACTERISTICS (Ta =

25 °C)
Characteristic Symbol Test Condition MIn Typ Max Unit
Collector-Base Breakdown Voltage BVcEo Ic=10jAA,IE=0 50· V

Collector-Emitter Breakdown Voltage BVcEo Ic=100jAA, le=O 50 V
Collector Cutoff Current ICBO Vce=40V, IE=O 0.1 jAA
DC Current Gain hFE . VcE=5V, Ic=5mA 68
Collector-Emitter Saturation Voltage VCE(sat) Ic= 1 OmA, le=0.5mA 0.3 V
Current Gain-Bandwidth Product fT VCE=5mA,lc=10V 250 MHz
Output Capacitance Cob Vce =10V,IE=0 3.7 pF
f=1.0MHz·
Input Off Voltage Vi(off) VCE=5V,lc=fOOjAA 0.5 V
Input On Voltage Vi(on) VcE=0.2V, Ic=5mA 1.1 V
Input Resistor R1 1.5 2.2 2.9 KO
Resistor Ratio R1/R2 0.042 0.047 0.052
Equivalent Circuit MarkIng

Collector (output)
R,
Base (input) - -......." " ' _.........--1
R,
L-_ _~ Emitter (Gnd)

NPNEPITAXIAL SIUCON TRANSISTOR

• Switching circuit, Inverter. Interface circuit Driver circuit 80T-23
• Built in bias Resistor(R, = 4.7.K!l, R,=47K!l)
.' Complement to KSR2114
ABSOLUTE MAXIMUM RATINGS, (Ta =2S0C)
Characteristic Symbol Rating, Unit

Collector-Emitter Voltage VeEO 50 V
Storage Temperature Tstg -55-150' ·C
ELECTRICAL CHARACTERISTICS (T.,=25°C)
Collector-Base Br~kdown Voltage BVCEO Ic"; 1 0j.iA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=100",A,le=0 50 V
Collector Cutoff Current ICBO Vce=40V, le=O 0.1 j.iA
Collector· Emitter Saturation Voltage Vce(sat) Ic=10mA,le=0.5mA 0.3 V
Current Gain-Bandwidth Product fr Vce=5mA, Ic=10V 250 MHz'
Output CapaCitance Cob Vce=10V,le=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=5V,lc=100",A 0.5 \
V
Input ReSistor R1 .3.2 4.7 6.2 KO
Resistor Ratio R1/R2 0.09 0.1 0.11
R,
Base (Input) ---""",Y---.,--I
R.
L-----I Emitter (Gnd)

KSR1201 .NPN EPITAXJAL SILICON TRANSISTOR

T0-928
• Switching circuit, Inverter? Interface circuit Driver circuit
• Built in bias Resistor (R,=4.7KO, R,=4.7KO)
Coliector·Base Voltage Vceo 50 V

. Emitter·Base Voltage VeBO 10 V
Collector Dissipaiion Pc 300 mW
Collector-Base Breakdown Voltage BVceo Ic=10!lA le=O 50 V

Collector· Emitter Breakdown Voltage BVcEo Ic=100IlA,le=0 50 V
Collector Cutoff Current ICBO Vce=40V, le=O 0.1 IlA
DC Current Gain hFe Vce=5V,lc=10mA 20.
Current Gain-Bandwidth Product fr Vce=5mA, Ic=10V 250 MHz
Output Capacitance Cob Vce=10V,le=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=5V,lc=100IlA 0.5 V
Input On Voltage Vi(on) Vce~0.3V, Ic=20mA 3 V
Input Resistor R, 3.2 4.7 6.2 KO
Resistor Ratio R,/R2 . 0.9 1 1.1
Equivalent Circuit
Collector (Output)
R,
Base (Input) - -.........."""'oI"---r--l
R,
Emitter (Gnd)
c8.SAMSUNG SEMICONDUCTOR 333

. -N.PN EPIJA~IAL SILICON TRA~$tST9R,
, ; ~' ,.. '

1000
100 VeE "M"
Va;:-=03V A,- 4.7K
50 A,-4.7K
A2=4.7K
A,- 4.7K
500
30
300
~
~
5
1.0=,
.C!/
!
>
i
~ i"'"
&i
~ 100
l/
-
"
,.I g 50
0.5
1 30
f
0.3
/
5 10 30 50 100 10
0.1 0.3 05 .1 3 1 3 5 10 30 60 100 300 500 1000
1c:(mA), COLLECTOR ~URRENT

IelmA) COLLECTOR CURRENT
"~: '.
..
INPUT OFF VOLTAGE
POWER DERATING
1000 400
VCE-5V
fIt.-4.7K
R,-4.7K 350
Z 3DC
0
r\
0
I
I
i
II:
250
200 "~
~...
150
\
~
;E 1\
100
. 50 \
0
0.4 0.8 1.2 1.8 2.0 o 25 50 75 100
\ 125 150 175 200
VAOFF) IV) INPUT OFF VOLTAGE T.(°C), AMBIENT TEMPERATURE
. (
c8 SAMSUNG SEMICONDUcroR " 334

KSR1202. NPN· EPITAXIAL SILICON TRANSISTOR

TO-92S
• Switching circuit, Inverter. Interface circuit Driver circuit

Storage Temperature Tstg -55-150 °C.
I
Collector-Base Breakdown Voltage BVceo Ic= 1O,..A. le=O 50 V

Collector-Emitter Breakdown Voltage BVceo Ic=100,..A, le=O 50 V
Collector Cutoff Current lceo VcB=40V, le=O 0.1 JAA
Current Gain-Bandwidth Product IT Vce=5mA,lc=10V 250 MHz
Output Capacitance Cob Vce=10V,le=O 3.7 pF
f=1.0MHz
Input Off Voltage Viloff) Vce=5V, 10=100,..A 0.5 V
Input On Voltage Vilon) Vce=0.3V,lc=10mA 3 V
Equivalent Circuit
~olleClor (Oulpul)
R,
""v---.--I
Base (Inpul)--........
Rt
Emiller (Gnd)
c8 SAMSUNG SEMICONDUcroR
335
:KSA1202 NPN .EPITAXIAL' SILICON TRANSISTOR
100 1000
Vce=O.3V VeE 5V
A1=-10K R.=10K
0 A2""10K Rz=10K
500
0
~
300
Z
0 C
0 CI
>
I
5
..
a:
~
Z
;,-V
-
3 a:
::> 100
~ (,)
'E (,)
Q
S: 1 50
.> 1
O. 5 30
'/
O. 3 I
01. 03 05 3 5 10 30 50 100 10
1 3 5 10 30 50 100 300 500 1000
lelmA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
VCE=5V
R,'"'"1QK
1000 I
A1 =10K 350
~ 30e
500 Z
~\
Z 0
a:
'"a: 300 ~
::>
(,)
~ I
I ;
Q
250
\
1\,
~ a: 200
:;:...
...
0
100 "'0~
..
iE
150
\
(,)
}
50
30 l 100
\
50
r"\.
10
o 0.4 0.8 1.2 1.6 2.0
25
i
50 75 100
\ 125 150 175 200
VdOFF) (V) INPUT OFF VOLTAGE


• Switching circuit, Inverter, Interface circuit Driver circuit TO-92S
• Complement to KSR2203 '

1. Emitter 2. Collector 3. ease

Collector-Base Breakdown Voltage BVceo 1e=10,..A,le=0 50 'V

Collector-Emitter Breakdown Voltage BVceo Ic=100,..A,IB=0 50 V
Collector Cutoff Current lceo VCB=¢OV, le=O 0.1 ,..A
.DC Current Gain hFe Vce=5V, Ic=5mA 56
Collector-Emitter Saturation Voltage Vee(sat) Ic=10mA,le=0.5mA 0.3 V
Current Gain-Bandwidth Product IT Vce=5mA.lc=10V 250 MHz
Output CapaCitance. Cob VCB=10V. le=O 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=5V. Ie= 1 OOlolA 0.5 V
Input On Voltage Vi(on) Vce=0.2V. Ic=5mA 3.0 V
ReSistor Ratio R,/R 2 0.9 1 1.1
Equivalent Circuit
Collector (Output)
R,
Base (Input) --~""_"""T"--I
R,
1-.----1 Emitter (Gnd)

KSR1203 NPN ~EPlTAXIAL SILICON. TRANSISTOR

100 1000
Vee-0.2V Vee -IlV
R.-22K
R,-22K
R.- 22K
RJ ·'22
50 500
V ..
./
./
t-- 1-"
VI--"
1 10
0.1 0.30.5 1 3 5 10 30 1 3 5 10 30 60 HIO 300 500 1000
IcCmAI COLLECTOR" CURRENT IcCmA) COLLECTOR CURRENT

VCE-SV 400
A.-22K
1000 RJ -22K 350
c
!iii
a:
~
500
300
\\
()
.~ "-
J
t; 100
\
i 50
0
\
i 30
50
i\:
10
o 0.' 0.8 1.2 1.6 2.0 o 25 50 75 100
\ 125 150 175 200
- V~OFF) (V) INPUT OFF VOLTAGE
·cS SAMSUNG SEMICONDUCTOR 338

KSR1204 , ~ > • NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING APPL,ICATION (Bias Resistor Built In)

0' Switching circuit, Inverter. Interface circuit Driver circuit TO-92S
o Built in bias Resistor(R, =47KO, R,=47KO)
'0 Complement to KSR2204

Emitter,Base Voltage' VEao ' 10 V
Junction Temperature Tj 150· ·C
·1
1, Emiiter 2. Collector 3. Base
Collector-Base Breakdown Voltage BVceo Ic= 1OjAA. le=O 50 V

'Collector-Emitter Breakdown Voltage BVceo Ic= 1oq/AA. la =0 50 V
Collector Cutoff Current ICBO Vca=40V. IE=O 0.1 /AA
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA.la=0.5mA 0.3 V
Current Gain-Bandwidth Product iT VCE=5mA.lc=10V 250 MHz
Output Capacitance Cob Vca=10V.IE=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) VCE=qV. Ic=100jAA 0.5 V
Input On Voltage Vi(on) Vce=0.3V. Ic=5mA 3 V
Input Resistor ' Rl ,32 47 62 KO
Resistor Ratio Rl/R2 0.9 1 1.1
Equivalent Circuit
Collector (OlJtput)
R•
ovvv---,--1
. Base (Input) - -......
R,
~_--I Emitter (Gnd)
c8 SAMSUNG SEMICONDUcroR ·339

DC CURRENT GAIN
INPUT ON VOLTAGE
'00 1000
c,;.w
Vce'""O.3V ~ f-= ,-- A,-47K
50 R,-47K R,-47K
R -47K 500 f--
30
300
.Sj
c 10 1---. !c:J
a l-
~
i IB '00
/
~
,.i ..
(.)
1
50
0.5 30
0.3
0' 0.3 05 3 5 '0 30 50 '00 '0

1 3 5 '0 3050 '00 300 500 1000
Ic(mAI COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
VCE-6V
A,-47K
1000 A-47K 350
i§ 30c
~
I
!i'
... 250
,
I, \
\:
~ 200
~ '50
\
...
'00
~
0
\:
'0
o 0.' 0.8 1.2 2.0 25 50 75 100
\ 125 150 175 200
VAOFF) M INPUT OFF VOLTAGE ToI°~ AMBIENT TEMPERATURE
. c8,SAMSUNG SEMICONDUCTOR 340

KSR1205 NPN EPITAXIAL SILICON TRANSISTOR'

• Switching Circuit, Inverter, tnterlace circuit TO·925
Driver circuit
• Built in bias Resistor (R,=4.7KO, R,=10KO)
• Complement to K5R2205
Coliector·Base Voltage VC80 50 V

Emitter-Base Voltage Ve80 10 V
I
Collector-Base Breakdown Voltage BVceo Ic=101lA, le=O 50 V

Collector-Emitter Breakdown Voltage BVceo Ic=100IolA,le=0 50 V
Collector Cutoff Current ICBO Vce=40V, le=O 0.1 lolA
Output Capacitance Cob Vce= 1OV, le=O 3.7 pF
f=lMHz
CurrenI' Gain-Bandwidth Product fr Vce=10V,lc=5mA 250 MHz
Input Off Voltage Vi(off) Vce=5V, Ic=1001olA 0.3 V
Input Resistor , Rt 32 4.7 6.2 KO
ReSistor Ratio Rt /R 2 0.42 0.47 0.52
Equivalent Circuit
Collector (Outputl
R,
sa... (lnputlO----,~f'or-__,-_I
R.
EmItter (Gnd)

;J($R120S· NPN· EPITAXIAL SILICON TRANS1STOR

100 1090
~f-
VCE=O.3V VCE=5
,~,""4.7K A,=4
50 500
.R,-1 OK
..
30 300
z
"!:;
C
10 ~ 100
i-"
0
I
>
50
!;
~ 30
~
V
,.I 10
05
0.3
./
1
0.1 03 05 3 5 10 30 50 100 0.1 0.3 05 3 5 10 30 50 100
le(mA), COLLECTOR CURRENT Ie(mA). COLLECTOR CURRENT

,>.,' 10000 400
~,;,,::~c
5000
3000 350
R2""1~_
1000
!i500
lI!300 \\
i'l I r\
\
\
5
3 0
r\
1
0.1 0.3 0.5
I
0.7 0.9 1 1 1.3 1.5 1.7 1.9 2.1 25 50 75 100
\ 125 150 175 200
T~·C~ AMBIENT TEMPERATURE
:8 S.AMSUNG SEMICONDUCTOR
342

Driver circuit
• Buill in bias Resistor (R,=10KO, R, =47KO)
·.ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Collector-Base Voltage VC80 50 V

Emitter-Base Voltage VE80 10 V
Collector Dissipation Pc 300· mW
Storage Temperature Tstg -SS-150 ·C
I
I 1 Emitter 2. Collector 3. Base

,
Collector-Base Breakdown Voltage BVcEo Ic= 1OIolA,IE=0 50 V
Collector-Emitter Breakdown Voltage BVcEo Ic";1001oiA, la=O 50 V
Collector Cutoff Current ICBO Vca=40V, IE=O 0.1 lolA
DC Current Gain hFE VcE=5V, Ic":,SmA 68
Collector-Emitter Saturation Voltage VCE(satl Ic=1.0mA,la=0.5mA 0.3 V
Output Capacitance Cob Vca=10V, IE=O \ 3.7 pF
f=1MHz
Current Gain-Bandwidth.Product fT VcE=10V, Ic=5mA 250 MHz
Input Off Voltage Vi(off) VCE=5V, Ic= 10010iA 0.3 V
Input On Voltage Vi(on) VcE =0.3V,lc=1mA 1.4 V
Equivalent Circuit
Collector IOutput)
R,
Base Ilnput)o---4>1;~---,,..--l
R,
Emitter IGnd)

'. NPN EPITJ~)qAL SILICON TRAN'SISTOR.
100 1000
VeE O.3V
0 R, 10K 500
R2""47K
0 300
I--
100 f-.
~
0
50
5 !Zw
3 a: 30
./ a:
::>
u
u
1
0 10 /
i
5
3 .. 3f-'-- .
01 03,05 3 5 10 3050 .100 01 0.3 05 3 5 10 30 50 100
lc(mAI, COLLECTOR CURRENT 1c(mA), COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
10000 400
~
5000 VCE.-5V
3000 R1 =lOK
A2""47K r.- 350
II
I
Z 30c
1\
250
\
a: 200 \.
~ 150
\
{
Ii: 100
1\,
5
3 0
r\
1
a5 07 0.9 1 1 13 15 1.7 1.9 21 25 50 75 100
\ 125 150 175 200
VjOFF)(V), INPUT OFf VOLTAGE T.(°C), AMBIENT TEMPERATURE


Driver circuit
• Built in bias Resistor (R.=22KO, R.=47KO)

•
ELECTRICAL CHARACTERISTICS (Ta =25 0 C)
Collector-Base Breakdown Voltage BVceo Ic=10,..A,le=0 50 V

Collector-I;mitter Breakdown Voltage BVceo Ic=100,..A,1 8 =0 50 V
Collector Cutoff Current leBO VcB=40V, le=O 0.1 ,..A
DC Current Gain hFe VcE =5V, 1e=5mA 68
Collector-Emitter Saturation Voltage Vce(sat) 1c,:,10mA, IB=0.5mA 0.3 V
Output CapaCitance Cob VCB= 1OV, IE=O 3.7 pF
f=1MHz
Current Gain-Bandwidth Prot\uct fr VCE=5mA,lc=10V 250 MHz
Input Off Voltage Vi(off) VcE=5V,lc=100,..A 0.4 V
Input On Voltage Vi(on) VcE =0.3V, Ic=2mA 2.5 V
Input Resistor Rl 15 22 29 KO
Equivalent Circuit
Collector (Output)
R,
Base (Input~---AI'''''''-:--.--l
R,
Emitter (Gnd)
=8 SA~SUNG SEMICONDUCTOR 345

KSR1207' NPN EP.ITAXIAL SILICON TRANSistOR
( .
INPUT ON VOLTAGE .DC CURRENT GAIN

100
VCE-O 3V
0 R1 ... 22K
R,-47K
0
or-- !
5
3
1';11--··• • •
1 ....... "'" Ii ...... 1-"
10
5
J _ _
O. 3
0.1 0.30.5 3 5 10 30 50 100
1c:(mA), COLLECTOR CURRENT . 1c(mAl. COLLECT.OR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
10000 400
5000 VCE=5~~
3000 R'-22~=
R2-4,7K 350
/ i!i 300
0
~ 250 ~. \
I J
~ 200
r\.
0
0 2 1.50 ~
0
..~ 100 ~,
5
3 .50
I\.
1
0.1 03 0.5
I
07 0.9 1.1 13 1.5 1.7 1.9 :p 25
i
50 75 100
\ 125 150 175 200
V~OFF)(V), INPUT. OFF VOLT.AOE T.,("C}, AM8I.ENT. T.EMPERAT.URE
346

• Built In bias Resistor (R,=47KO, Rl=22KIl)
Collector-Base Voltage VCB() 50 V

Emitter-Base Voltage VEso 10 V

! Collector-Base Br.eakdown Voltage BVceo Ic= 1 OjoiA, le=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=100joiA,18=0 50 V
Collector Cutoff Current leBO VCB=40V, le=O 0.1 tJ A
DC Current Galn hFE Vce=5V, 1e=5mA 56
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA,18=0.5mA 0.3· V
Current Gain-Bandwidth Product h Vce=5mA,lc=10V 250 MHz
Output CapaCitance Cob VCB=10V,le=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=5V, Ie= 1OOjoiA 0.8 V
Input On Voltage Vilon) Vce=0.3V, 1e=2mA 4 V
Input Resistor Rt 32 47 62 KO
Resistor Ratio Rt /R2 1.9 2.1 2.4
Equivalent Circuit
Collector (Outpull
R,
Base (Input) ---...vV---,--i
R,
L..-----i Emitter (Gnd)

DC CURRENT GAIN
INPUT ON VOLTAGE
, '
100 1000
VeE -5V
Vce-O.3V
R, 47K R,- 47K
50
R2=22K 500 R.- 22K
30
Z
300
C
(II
- l-
I V
B
1
i"""
..
CJ
J
100
50,_
0.5 30
0.3
0.1 0.30.5 3 5 10 30 50 100 10

1 3 5 10 30 50 100·
Ic:(~~ COLLECTOR CURRENT
l.,(mA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
VCE-5V
R,-47K
1000 _ R.-22K 350
Ii 500
IIC
W
!!iCJ 300 0 1\
IIC I \
II \.
...~... 100
\
0 0
CJ
j
50
30 II
'\
II· 0
1\
II
25 50
I
75 100
'\ 125 150 175 200
0.4 0.8 1.2 1.8 2.0
T,(°C~ AMBIENT T~PERA1URE

V~OFF) (V). INPUT OFF VOLTAGE
348

TO-928
Orlver circuit

•
Storage Temperature. Tstg -55-150 DC 1. Emiiter 2. Collector 3. Base
Collector-Base Breakdown Voltage BVcEo Ic= 1001lA. IE=O . 40 V

Collector-Emitter Breakdown Voltage BVcEo Ic= 1mA, '&=0 40 V
Collector Cutoff Current ICBO Vca.-30V, IE-O 0.1 IIA
DC Current Gain hFE Vce-5V,lc=lmA 100 6'0'0
Collector-Emitter Saturation Voltage VCE(sat) Ic-1QmA.ls-lmA '0.3 V
Output CapaCitance Cob Vee- 1QV.IE -Q 3.7'0 pF
f-1MHz
Current Gain-Bandwidth Product h Vce=l'OV. Ic"5mA 25'0 MHz
Input Resistor R 3.2 4.7 6.2 KQ
Equivalent Circuit
Collector (Output)
R
Base (InputlO---~ _ _---1
Emilier (Gnd)
c8 SAMSUNG SEMICONDUcrOR 349

DC CURRENT GAIN
0000 1000
lella-'10/1
5000 50C R=4.7K
~
3000 300
z 100 ' - -
i 50 . t
i 30
i 10
!
J
0.1 0.30.5 1 3 5 10 305

3 ~ ,1,0 30 50 100 300 500 1000
IcCmA~ COLLECTOR CURRENT.
1cC~ COLLECTOR CURRENT
POWER DERATING
350
\
"\\.
\
50 r\
25 50 75 100
\ 125 150 175 200
. T~·C~ AM~ENT TEMPERATURE
c8 SAMSUNG SEMICONDUCTOR·

• Switching ,Circuit. Inverter. Interface circuit To-92S
Driver circuit
• Built In bias Resistor (R=10KIl)

-Junction Temperature Tj 150 °C
•
,Storage Temperature Tstg -55-150 °C 1, Emitter 2, Collector 3, Base
'ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic Symbol Test Condition ' Min Typ , Max Unit
Collector-Base BreakQown Voltage BVCBO Ic=100/lA. IE=O 40 V

Emitter-Emitter Breakdown Voltage' BVCEO le==lmA.le=O 40 V
Collector Cutoff Current ICBO Vca=30V. le=O 0.1 /lA
DC Current Gain hFE Vce=5V.lc=lmA , 100 600
Collector-Emitter Saturation Voltage Vcelsat) ic= 1OmA. le-l mA 0.3 V
Output CapaCitance Cob Vea-l0V.le""0 3.7 pF
f""1MHz
Current Gain-Bandwidth Product fT, Vce=10V.lc=5mA 250 MHz
,
Equivalent Circuit
Collector (OUlput)
R
, Base IInput)O----~'¥_---I
Emitter (Gnd)
DC CURRENT GAIN . COlLECTOR-EMITTER SATURATION VOLTAGE

10000
SOO0
VCE""SV
A-10K
..
1000 _ _
soc
gflI
leila 10/1
R=10K
3000 ~ 300
!! ~
>
~,OO0 Z
0
100 1=:.
Ii
I 500
U 300
g i
S
.!
50
30
i 100 10
i
~
0 >
Or-
1O
0.1 030.5 3 5 10 30 50 100 3 5 10 30 50 100 300 500 1000
Ic(mA~ COLLECTOR CURRENT IdmA~ COLLECTOR CURRENT
POWER DERATING
400
350
Z 300
1\
i
CI
15
2SO
200
'\
I\.
3J
2 ISO
\
l. 100
'\
SO
\.
o 25 50 75 100
\ 125 150 175 200
T,(.~ AMBIENT TEMPERATURE

SWITCHING APPLICATION (Bias Resistor Built In) .

• Switching Circuit, Inverter, Interface circuit TO·92S
Driver circuit
ABSOLUTE MAXIMUM RATINGS (Ta=2~OC)

Colle9tor-Emitter Voltage VCEO 40 V
Storage Temperature Tstg -55-150
I
°C 1. Emiiter 2. Collector 3. Base
Characteristic Symbol T8st Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVceo le= 1OO,.A, IE=O 40 V

Emitter-Emitter Breakdown Voltage BVeEo IE=1mA,la=0 40 V
Collector Cutoff Current lceo Vca=30V. IE=O 0.1 jAA
DC Current Gain hFE VCE=5V,lc=1mA 100 So'O
Collector-Emitter Saturation Voltage Vce(~t) Ic=10mA.la=1mA 0.3 V
Output CapaCitance Cob Vca=10V.IE=0 3.7 pF
f=1MHz
Current Gain-Bandwidltl Product fr VCE=10V. le=5mA 250 MHz
Equivalent Circuit
Collector (Output)
R
Base (Input)O y+...
Emitter (Gnd)
353
KSR·1212 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING APPLICATION (Bi~sResis.tor Built 10)·

Driver circuit
• Built in bias Resistor (R=47KD)
• Complement to K8R2212 '.
ABSOLUTE MAXIMUM RATINGS (T/=25°C)
Ch/lracteristic Symbol Rating Unit

Collector-Emitter Voltage VCEO 40 'V
Emitter-B,ase Voltage VEBO 5 V
Storage Temperature T5tg -55-150 °C 1. Emiiter 2. Collecior 3. Base
Characteristic Symbol Test 'Conditlon Min Typ Max Unit
COllector-Base Breakdown Voltage BVcso Ic~100,..A, IE=O 40 V

r
Emitter-Emitter Breakdown Voltage. BVceo le=lmA,IB=O 40 V
Collector Cutoff Current ICBO VcB=30V, 'E=O 0.1 ,..A
DC Current Gain hFE VcE=5V, Ic=lniA . 100 600
Collector-Emitter Saturation Voltage Vce(sat) Ic=10mA,IB=lmA 0.3 V
Output CapaCitance '. Cob VcB =10V, IE=(I 3.7 pF
f=lMHz
Current Gain-Bandwidth Product fT. Vce=10V,lc=5mA 250 MHz
Input Resistor R 32 47 62 KD
Equivalent Circuit
Collector (Output)
R
ease (Input)O---~"r----l
EmItter (Gnd)

SWITCHING APPLICATION
. (Bias .Resistor Built In)
• Switching circuit, Inverter, Interface circuit Driver circuit TO·92S
• Built in bias Resistor(R, = 2.2KIl, R,=47K!l)
Collector· Base Voltage Ve80 50 V

Collector· Emitter Voltage VeEO 50 V
Emitter·Base Voltage VE80 10 V
I
Collector-Base Breakdown Voltage BVCEo Ic= 1OjAA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVeEo Ic= 1OOjAA, 18=0 50 V
Collector Cutoff Current ICBO VcB =40V, le=O 0.1 JAA
CoUector-Emitter Saturation Voltage VeE(sat) le=10mA,IB=0.5mA 0.3 V
Current Gain-Bandwidth Product fr Vce=5mA,le=10V 250 MHz
Output Capacitance Cob VcB =10V,le=0 3.7 pF
f=1.0MHz
Input Off Voltage Vi(off) VcE =5V, le= 1 OOjAA 0.5 V
Input On Voltage Vi(on) VcE =0.2V, le=5mA 1.1 V
Input Resistor R, 1.5 2.2 2.9 KG
Resistor Ratio R,/R 2 ·0.042 0.047 0.052
Equivalent Circuit
CollectOr (Output)
A,
Base (Input) ----"....vV""---r--i
A,
L..----t Emitter (Gnd)
355
SWITCHING APPLICATION (Bias Res.istor Bui.lt In)

• Switching circuit. Inverter. Interface circuit Driver circuit TC>-92S
• Built in bias Resistor/R, = 4.7KO, R,=47KO)
ABSOLUTE MAXIMUM RATINGS (Ta =:=25°C)
Characteristic Symbol. Rating Unit

Collector-Emitter Voltage. VCEO 50 V
Collector Dissipation Pc 300 fT)W
Storage Temperature Tstg -55-150
, °C
1. Emitter 2. Coll~ctor 3. ease .
Characterist.ic Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVCEO Ic=1Q"A, I~=O 50 V

Collector-Emitter Breakdown Voltage BVceo Ic=100/lA,la=0 50· V
Collector Cutoff Current ICBO Vca=40V, le=O 0.1 "A
Collector-Emitter Satl!ration Voltage Vce(sat) Ic= 1OmA, la=0.5mA 0.3 V
Current Gain-Bandwidth Product h Vce=5mA,lc=10V 250 MHz
Output Capacitance Cob Vce=10V,le=0 3.7 pF
f=1.0MHz
Input Off Voltage
II1Put On Voltage
Vi(off)
Vi(on)
Vce =5V,lc=100"A
Vce=O 2V, Ic=5mA
0.5
1.3
V
V
-
Input Resistor .R, 3.2 4.7 6.2 KO
Equivalent Circuit
R,
Base (Input) ---""",v---.--I
R,
'-----I Emitter (Gnd)
356
KSR2001 PNP EPITAXIAL SILICON TRANSISTOR

• Built in bias Resistor (R.=4.7KO, R,=4.7KO)
Collector·Base Voltage Vclio -50 V

Collector· Emitter Voltage VCEO -50 V
Emitter·Base Voltage VEBO -10 V
Storage Temperature Tstg -55-15.0 ·C
Characteristic
.
Symbol
,
Test Condition Min

Typ Max Unit

•
Collector-Base Breakdown Voltage BVCBO Ic=-101lA, IE=O -50 V
Collector-Emitter Breakdown Voltage BVcEo Ic=; -1 001lA, IB=O -50 V
Collector Cutoff Current ICBO VcB=-40V,IE=0 -0.1 ,.,.A
DC Current Gain hFE VcE =-5V,lc=-10mA 20
Collector-Emitter Saturation Voltage VCE(sat) ·lc =-10mA,IB=-0.5mA -0.3 V
Current Gain-Bandwidth Product fr VcE =-5mA,lc =-10V 200 MHz
Output Capacitance Cob VCB = -, 1OV, IE=O 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) VcE =-5V,lc=-100,.,.A -0.5 V
Input On Voltage Vi(on) VcE =-0.3V,lc =-20mA -3 V.
Input Resistor R, . 3.2 4.7 6.2 KO
Resistor Ratio R,/R2 0 .. 9 1 1.1
Equivalent Circuit
Collector (Oulput)
R,
ease (Inpot) - - - " " " , V ' - - - . - - I
R,
'"-----I Emiller (Gnd)
c8 SAMSUNG SEMICOND~croR 357

KSR2001 PNP EPITAXIAL SILICON TRANSiSTOR
DC CURRENT GAIN
INPUT ON VOLTA.GE
-100 .1000
VeE ;"5V.
R,;, 4.7K
-50
-3C
000 ft.- 4.7K
Z 300
III
~
..."~
-10 -.
!5
~
C-
-5
-3
I
lo.!
100
V
V
J!
:>
-1
1 50
30 If
-0.5
-0.3 /
10
1 3 5 10 50 1 00 ~oo 500 1000
INPUT OFF VOLTAGE

POWER DERATING
1000
Vce- 5V
R,-4.7K
Rl~4.7K
350·,
i\
I \
\.
'" 200
~ 15 0
'\
0
0
0." 0.8 1.8 2.0
'
...
100
25
i
50 75
1,\
100
\.
\ 125 150 175 200
T,(·C~ AMBIENT TEMPERATURE

V~OFF) (V) INPUT OFF VOLTAGE
c8 SAMSUNG SEMICONDUCTOR.
358

• Built In bias Resistor(R,=10KO, R,=1OKO)
ABSOLUTE MAXIMUM RATINGS (Ta =25°C).

Junction Temperature' Tj 150 °C
Characteristic Symbol Test Condition Min

1. Emitter 2
Typ
Base 3. Collector
Max Unit
•
Collector-Base Breakdown Voltage BVcBO Ic=-10",A,IE=0 -50 V
Collector-Emitter Breakdown Voltage BVcEo Ic=-100jolA,la=0 -50 V
Collector Cutoff Current IcBO Vca=-40V,IE=0 -0.1 joIA
DC CLirrent Gain hFE VCE=-5V, Ic=-5mA 30
Collector-Emitter Saturation Voltage VCE(sat) Ic =-10mA,la=-0.5mA -0.3 V
Current Gain-Bandwidth Product fr VCE=-5mA,lc=-10V 200 MHz
Output Capacitance Cob Vca =-10V, 1.=0 5.5 pF
f=1.0MHz
Input Off Voltage , Vi(off) Vc.=-5V,lc=-100jolA -0.5 V
Input On Voltage Vi(on) VcE =-0.3V,lc=-10mA -3 V
Equivalent Circuit
Collector (Output)
R,
Base (Input) ---~.......--,--I
R,
Emitter (Gnd)

KS,R2002 PNP .EPITAXIAl: SILICON TRANSISTOR
DC. CURRENT GAIN

INPUT ON VOLTAGE
-100 1000
veE -5V
A.= 10K
-50 VCE= ~t
-3C ~~:~~~ 500
A.- 10K
300
'"
~
g
-10 Z
:c
....
::>
-5 "....
Z
W lL~
! -3 II:
II: 100
g '"
u
I
;>
-1 U
Q 50
1
-0.5
-03
3(1
/ "
-0 1 10
0.3 -1 3 -5 10 -30 -50 -100 10 30 50 100 300500 1000
lc(mA). COLLECTOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING
40a
VCE=5V
R1 =10K
....
Z
1000
'. R)-=10K 35a
II: 500 c
W
II:
'"
U 300
:..
;:: 30
250
;'\
I \ \
II:
~
U
I
I
a: 200 \.
........w
0
U
100
I-- - t---
~ 15a
\ ,
C
~
50
30
..~ 100 1\
50 \.
10
o 0.4 0.8 1.2 1.8 2.0 o 25
i
50 75 100
\ 125 150 175 200
T,(°C), AMBIENT TEMPERATURE

V,(OFF) (V) INPUT OFF VOLTAGE


• Built in bias Resjstor(R;=22KO, R,=22KO)

Characteristic Symbol Rating U(lit
Collector-Base Voltage VCBo -50 V

'Emitter-Base Voltage VEeo -10 V
1. Emitter 2. Collector 3, Base
Collector-Base Breakdown Voltage BVceo Ic= -1 OJ.lA, IE=O -50 V

Collector-Emitter BreakdC?wn Voltage BVCEO Ic=- lOOIlA,le=.O -50 V
Collector Cutoff Current lceo Vce =-40V,IE=0 -0.1 j.lA
DC Current Gain hFE VcE =-5V, Ic=-5mA 56
Collector-Emitter Saturation Voltage VCE(sat) Ic =-10mA,le=-0.5mA -0.3 V
Current Gain-Bandwidth Product fr VcE =-5mA,lc=-10V 200 MHz
Output Capacitance Cob Vce =-10V,IE=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce =-5V,lc=-100j.lA -0.5 .'
V
Input On Voltage Vi(on) VcE =-0.2V, Ic=-5mA -3.0 V
Equivalent Circuit
Collector (Output)
R,
Base (Input) - - - - " v v V ' - - - . - - i
R,
Emitter (Gnd)
cR SAMSUNG SEMICONDUCTOR
361
KSR20()3 ,: PNP EPITA~IAL SILICON TRANSISt()R
INPUT ON VOLTAGE' DC CURRENT GAIN
100 1000
Vce- O 2V veE =5V
R,-22 K R,= 22K
50 R1 ""22K R.- 22K
500
30 300
w Z
CI :c
~~
~ ...
CI
Z
W
10 II: 100
iz
II:
::>
U
5 U 50
Q
~,
~ J:
~
30
1/
I I
10-'10-
~
, I '0
0' 03 05 3 5 10 30 50 100 1 3 5 10 30 50 100 300 500 1000
lc(mA) COLLECTOR CURRENT lc(mA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
Vce- SV
1000
I A,""22K
350
R!-22K
... 500
~
30C
Z
II:
W
II: 300
!C... 250
\\
::>
U I ij
II: is ~
...0
!il.... 100
I a:
'"0~
...
200
\
....
0
'150
U
~.... 1\
,
50
} 30
... 100
50
10
o 04 o 25
i
50 75 100
\ 125 150 175 200
08 1 2 16 20
T.l°,C}. AM!IJENT TEMPERATURE

,'cR SAMSUNG SEMICONDUCTOR 362


• Switching circuit, Inverter, Interface circuit Driver circuit TO·92
• Built in bias Resistor(R ,=47KD, R,=47KD)

1. Emitter 2. Collector 3. Ba..
ELECTRICAL CHARACTERISTICS (Ta = 25 ~ C)
Characteristic SYJ:llboi Test· Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO Ic=-10"A, 'IE=O -50 V

Collector-Emitter Breakdown Voltage. BVcEo 'lc=-100"A,IB=0 -50 V
Collector Cutoff Current ICBO VcB=-40V, IE=O -0.1 "A
DC Current Gain h~E VcE =-5V,lc=-5mA 68
Collector-Emitter Saturation Voltage Vcdsat) Ic=-10mA,IB=-0.5mA -0.3 V
Current Gain-Bandwidth Product fr VCE=-5mA,lc=-10V 200 MHz
Output Capacitance Cob VcB =-10V,IE=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) VcE =-5V,lc=-100"A -0.5 V
Input On Voltage Vi(on) VcE =-0.3V,lc=-10mA -3 V
Input Resistor R, 32 47 62 KQ
Equivalent Circuit
Collector (Output)
R,
Base (Input) ---"...vV---,-4
R,
.f
EmItter (G.nd)

KSR2004" PNP EPITAXIAL .SILICONTRANSISTOR
DC CURRENT GAIN
INPUT ON VOLTAGE
1000
-100 VeE ';~V
Vee=<- O.3V R,- 47K
-50 R1 c 47K R,= 47K
R2-=47K 500
-3C
...I'!
w
-10 1--.
300
Z
< .....
...~ ~ <,,'
CJ
-5 ...Z
l -3 W
II: 100
~ .... II:
~
U
:I
:>
-1 U
Q
50
~ 30
-0.6 .c
-0.3 1--
-0.1 0.3 -3 -5 -10 -30 -50 -100 10~-L~~~~ __~~~~~-L~~~W

1 3 5 10 BO 50 100 3005001000
lc!mAI COLLECTOR CURRENT
INPUT OFF'VOL TAGE

POWER DERATING
400
350
~ 3DC
i
a:
25
200
0
1\,
I\.
,
~ 150
'\
~.. 100
1\
0
~
'OLO~--0~.4~--0~.8~~'~2~--'~6~--2~O~--~
25 50 75 100
\ 125 150 175 200
T.(·~ AMBIENT TEMPERATURE

VdOFFI (VI INPUT OFF VOLTAGE

SWITCHING APPLICATION (Bias Resistor Built 'In)

Driver circuit
• Built In bias Resistor (R,=4.7KIl, R,=10KIl)

Emitter-Base Voltage VEOO -10 V
Junction Temperature Tj 150 I °C
Storage Temperature Tstg -55-150 i °C 1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (Ta 25 ° C) =

Characteristic Symbol . Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBo Ic=-10IlA, le=O -50 V

Collector-Emitter Breakdown Voltage BVceo Ic=-100IlA,IB=0 -50 V
. Collector Cutoff Current Icoo Vca =-40V, le=O -0.1 ,.A
DC Current Gain hFe Vce=-5V,lc=-5mA 30
Collector-Emitter Saturation Voltage Vce(sat) Ic=-10mA,IB=-0.5mA -0.3 V
Current Gain-Bandwidth Product Cob Vca =-10V,le=0 5.5 pF
f=1MHz
Current Gain·Bandwidth Product fr • Vce =-10V, Ic =-5mA 200 MHz
Input Off Voltage Vi(off) VCE=-5V,lc=-100IlA -0.3 V
Input On Voltage Vi(on) Vce =-0.3V, Ic=-20mA -2.5' V
Input Aesistor At 3.2 4.7 6.2 KO
Aesistor Aatio At/A 2 0.42 0.47 0.52
Equivalent Circuit
Collector (Output)
R,
Base (lnputlG--~~N+r--r--l
R,
EmItter (Gnd)

-'000._~
-100
Vce--Q,3V VCE=-5V
-SO -~ ~-~
Rz=10K
-3C -300
l!I
~ -10 -
~
... -5
i -3
~
I
,;;
-1
-0.5
-0.3
-0.1 0.3 -1 -3 -5 -10 30 -SO -100
Ic:(mA~ COLLECTOR CURRENT Ic:(mA~ COLLECTOR CURRENT

INPUT OFF VOLrAGE POWER DERATING
-10000 400
-5000 Vce--6V
R,-4.7K'=
-=
• -3000 3SO
R2- 1OK
-1000 300
~
I
1== \
G J
a
is
2SO
\
\.
'200
,~-100 "
~ :: ~.
150
\
~ 1\
j -10 l 100
-6
-3 50 1\
1 I
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 25 50 75 100
\ 125 150 175 200
V40fF)(V), INPUT OFF VOLTAGE T,(·~ AMBIENT TEMPERATURE
366
KSR2006 PN~ EPITAXIAL SILICON TRANSISTOR

Driver circuit
• Built in bias Resistor (R,=10KO, R2 =47KO)

Collector-Emitter Volta\je VCEo. -50 V
Emitter-Base Voltage VEoo -10 V
· Junction Temperature Tj 150 °C
-55-150 °C
I
Storage Temperature T:;tg 1. Emitter 2. Colleclor 3. Base
Collector-Base Breakdown Voltage BVceo Ic=:-lOj.lA,IE=O -50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-100j.lA,le=0 -50 V
Collector Cutoff Current Icoo Vce= -40V, IE=O -0.1 j.lA
DC Gurrent Gain hFE VcE =-5V, Ic=-5mA 68
. Collector-Emitter Saturation Voltage Vcdsat) le=-10mA,le=-0.5mA . -0.3 V
Output Capacitance Cob Vce =-10V,IE=0 5.5 pF
f=lMHz
Current Gain-Bandwidth Product h. VcE =-10V,le=-5mA 200 MHz
Input Off Voltage Vi(off) VCE=-5V,lc=-100j.lA -0.3 V
Input On Voltage Vi(on) VcE =-0.3V,lc =-lmA -1.4 V
Input Resistor R, 7· 10 13 KO
ReSistor Ratio R,/R2 0.19 0.21 0.24·
Equivalent Circuit
Collector (Output)
R,
Base IInput_-~w.r----r--i
R,
Emitter (Gnd)
367

-100 -1000
Voe- 5V
Vce- 03V R, 10K
-50 R, 10K -500
R, 47K
-30 R =47K
-300
...~
~
-10 " -100 1==.
:::0
~
-5
-3
V
1-
-
Ii
60
-30
~
i LI'
,.I -1 -10
-05 -5
-0.3 -3
1
-01 0.3 -3 5 -10 -30 -50 -100 - 0.1 0.3 3 - 5 - 10 30 50 100
Ic(mA~ OOLlECTOR CURRENT Ic(m~ COLlECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
-10000 400
~~~O~~
-5000
-3000 350
I R2-47K_
-1000
II Z 300
~
1
!i-500
II!-300
\
~
260
iii I\.
~-100 200
'" -50
~ -30 ~ 150
\
8
} -~O
! '" 100
1\,
5
-3 0 ~
1
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -13 -1 5 -1.7 -1.9 -2.1 25 50 75 100
\ 125 150 175 200
V.OFfllV), INPUT OFF VOLTAGE T.(·C~ AMBIENT TEMPERATURE

SWITCHING ·APPLICATION (Bias Resistor Built In)

Driver circuit
• Built in bias Resistor (R,=22KIl R,=47KIl)

Collector Current Ie -100 rnA
Characteristic Symbol Teat Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVcoo Ic=-10fAA,IE=0 -50 V

Collector-Emitter Breakdown Voltage BVcEO Ic =-100jlA,ls=0 -50 V
Collector Cutoff Current Icoo Vca =-40V,IE=0 -0.1 fAA
Collector-Emitter Saturation Voltage VCE(sat) Ic =-10mA,ls=-0.5mA -0.3 V
Current Gain-Bandwidth Product Cob Vca =-10V, IE=O 5.5 pF
f=1MHz
Current Gain-Bandwidth Product h VCE=-10V, 1c=-5mA 200 MHz
Input Off Voltage Vi(off) VCE=-5V, Ic=-100fAA -0.4 V
Input On Voltage Vi(on) VCE=-0.3V,lc=-2mA -2.5 V
Input Resistor R1 15 22 29 KIl
ReSistor Ratio R1/R2 0.42 0.47 0.52
Equivalent Circuit
Collector (Output)
R,
Base (Input_--4\M,---.----I
R,
Emitter (Gnd)

KSR2007PNP EPITAXIAL SILICON TRANSISTOR
-100 Vce= 03V _1000_~

VCE""'-5V
-50 RI=22K -500 R1- 22K
A, 47K R2 47K
-30 -300
i
t:
-10
-5
~
.. -,00 _ _ _
!i
II: ~50
i -3 ff -30
g
I
:>
-05
1
-0.3
~ i
1_-5 ,01/• • • •
-3
,-01 - 03 - -3
I 5 - 10 30 - 50 100
idmA), COLLECTOR,CURRENT idmA~ COLLECTOR CURRENT
INPUT OFF VOLTAGE, POWER DERATING

-10000 400
-5000 Vce- 5V=
-3000 R,-22K- 35a
A2=47K_
-1000
)
I
!i-sao
1-300
1\ ,
'\
i!
I \.
.
1!i-1 00
() -50
iii
~
200
\
~ -30 150
8
j -10
!.. 100 \,
-5
-3 , \.
-1
-0.1
I
0.3 -05 -0.7 09 1.1 -1.3 -1.5 -1.7 -1.9 -2.1 26 50 75 100
\ 125 150 175 200
V~OFf)(V), INPUT OFF VOLTAGE T.(·C~ AMBIENT TEMPERATURE


• Switching circuit, Inverter, Interface circuit Driver circuit T0-92
• Built in bias Resistor (R.=47KIl, R, =22KIl)
.' Complement to KSR1008
ABSOLUTE MAXIMUM RATINGS <Ta=25°C)

Collector Current Ie -100, mA
•
I, Emitte'2. Collector 3. Base
Characteristic Symbol lest Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVeBO le=-10,..A,le=0 -50 V

Collector-Emitter Breakdown Voltage BVceo Ic=-100,..A, la=O -50 V
Collector Cutoff Current ICBO Vca=-40V,le=0 -0.1 ,..A
DC Current Gain hFe Vce =-5V, Ic=-5mA 56
Collector-Emitter Saturation Voltage Vce(sat} 1c=-10mA,la:=-0.5mA -0.3 V
Current Gain-Bandwidth Product h Vce==-5mA,lc=-10V 200 MHz
Output Capacitance Cob Vea= -1 OV, 'e=O 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce =-5V, ic=-100,..A -0.8 V
Input On Voltage VI(on) Vce=-0.3V,lc=-2mA -4 V
Equivalent Circuit
Colleclor (Output)
R,
Base (Input)
R,
Emitter (Gnd)
371
KSR2008 .PNP. EP1TAXIAL SILICON TRANSISTOR
•
DC CURRENT GAIN
INPUT ON VOLTAGE
1000
-100 Vel -';v1
R,""47K
VCE- O:3V
-50 R1-47K RI=22K
Ra=22K 500
-3<:
.300
III Z
;!
~
-10
..
CC
c:J
i
~
-5
-3
- I
zw
'"
(J
u
100
"
.,.,
co
,.I -1
1
50
-0.5 30
-0.3
-0.1 -0.3 -1 3 -5 -10 30'-50 100 10

3 5 10 30 50 100 300 500 100?
Ic:lmA~ COLLECTOR CURRENT
lelmA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
Vce- 5V
I. R,:=I47K
1000 R,-22K 350
.. 500 Z 30C
Z
II:
W
!!i(J
300 I
1/ i 250 \
II:
e
(J 100
Z5
'11:
W
iJ
~
200 "\ ~
...0~ ~
150
(J
}
50
30
~ 100
.,
1\
.~ ,
50
10
o 0.4 0.8 1.2 1.6 2.0 25 50 75 100
\ 125. 150 175 200
T.I·~ AM.BlENT TEMPERATURE

V~()FF) (V) INPUT OFF VOLTAGE
c8 SAM~UNG SEMicoNDUCTOR 372


TO-92
Driver circuit
Characterisfic Symbol Rating Unit

Collector Current Ic .-100 mA
Collector Dissipation p~ 300 mW
Storage Temperature Tstg -55-150 °C 1. Emiller 2. Collector 3. Base
I
Collector-Base Breakdown Voltage BVcBO Ic= -1 OO!AA, IE=O -40 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-lmA,la=O -40 V
Collector Cutoff Current Icso Vcs =-30V,IE=0 -0.1 ,..A
DC Current Gain hFE VcE=-5V, Ic==-lmA 100 600
Collector· Emitter Saturation Voltage VCE(sat) Ic=-10mA, la=-lmA -0.3 V'
Output Capacitance Cob Vca=-10V, IE=O 5-.5 pF
f=lMHz
Current Gain-Bandwidth Product h VCE=-10V,lc=-5mA 200 MHz'
Input Resistor Rl 3.2 4.7 6.2 KO
Equivalent Circuit Collector (Output)
R
Base (lnput)O--~Mr-----j
Emitter (Gnd)

KSR2009
\" /" ,
DC CURRENT GAIN COLLECTOR-EMITTEfUATURATION VOLTAGE
-'0000_,,_
--5300P000 R=4.7K . i-3OO
-'000_,,_
-500 R-UK vC£- SV IclIB- 10/1
~ ~-+4-~tHt--+~~~r--r~Hi~
~-'OOI• •1
~ ~
i~-'OOOIl_
i ~500
S-30
~ -SO
II! .
iJ -300
g ~+4+H##~rr~~-+~~
i
-50
i-,OO . . . .
-30
i-'O. . . . .,p -5
-3
-, -3 -5 -10 -30 50-100 -300-500 1000
Ic(mA~ COLLECTOR CURRENT Ic(mA~ COLLECTOR CURRENT
POWER DERATING
400
350
Z 300
~ \.
",\
250
ill
UI
is
200
iii
..
~
0
'50
{.. ~
'00
50 I\.
\
25 50 75 100 125 150 175 200·
T,(·~ ,AMBIENT TEMPERATURE

KSR2.010 PNP. EPITAXIAL SILICON TRANSISTOR

, Driver circuit
• Built in bias Resistor (R=10K
ABSOLUTE MAXIMUM RATINGS (Ta= 25 0 C)
Collector-Base Voltage VCBIJ -40 V

Storage Temperature Tstg -55-150 ·C .
I
1.' Emitter 2. Collector 3. Base
Characteri,tic Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVcso Ic=-100jlA,le=0 -40 V

Collector-Emitter Breakdown Voltage BVcEO le=-1mA,la=0 -40 V
Collector Cutoff Current ICBO Vca=-30V. le=O -0.1 jlA
DC Current Gain hFE Vce=-5V,lc=-'1mA 100 600
Collector-Emitter Saturation Voltage VCE(sat) ic=-10mA, la=-1mA 0.3 V
Output Capacitance Cob Vca =-10V,le=0 5.5 pF
f=1MHz
Current Gain-Bandwidth Product· h Vce=-10V,lc =-5mA 200 MHz
InPut Resistor R 7 10 13 KO
Equivalent Circuit
Collector (Output)
R
Base (tnput)o----"\fY'or-----I
Emitter (Gnd)

DC CURRENT GAIN COLLECTOR-EMITTER SATURAnON VOLTAGE

a
-10000~~~111~~111~~;11
-5000
-3000
VCE--5V
R=10K -600
IU-100
!:I-300
1el1a-1011
R-10K
~
a-
~
1oo f----
-50
S -30
!!
i!
i- ,OO _ , , _
-10
-50 oJ -5
-30 -3
-10_"'0"",..J..._-!0""3~J..L.I_-!-,-.L....I3"..w_5:U-U"J,,0-J.._3::!OfJ_'-!5~0.w_~'00 -1 -3· 5 -10 -30 50 100 300 500 1000
l",mA}, COLLECTOR CURRENT lc(mA~ COLLECTOR CURRENT
POWER DERATING
400
350
I:
a: -200
1\,
~
I 150
\
..\ 100
1\,
50
r\
25 50
i
75 100
\ 125 150 175 200
T.(°C), AMBIENT TEMPERATURE
ciS SAMS~NG SEMICONDUCTOR 376

. KSR2011 PNP EPITAXIAL SILICON TRANSISTOR

• Switching 'Circuit, Inverter, Interface circuit TO-92
Driver circuit
Collector-Base Voltage Veso -40 V

Emitter-Base Voltage VEso -5 V
I
Storage Temperature Tstg -55-150 °C 1. Emitter 2. CoUeetor 3. Base
Characteristic Symbol Test Condlt.lon Min Typ Max Unit
Collector-Base Breakdown Voltage BVeBO le= -1 OOIlA, IE=O -40 V

Collector-Emitter Breakdown Voltage BVcEo IE=-1mA,la=0 -40 V
Collector Cutoff Current ICBO Vca=-30V, IE=O -0.1 IlA
Collector-Emitter Saturation Voltage VCE(sat) Ic =-10mA,la=-1mA -0.3 V
Output Capacitance Cob Vca= -1 OV, IE=O 5.5 pF
f=1MHz
Current Gain-Bandwidth Product ·h VcE =-10V,lc =-5mA 200 MHz
Equivalent Circuit
Collector (Output)
R
Base (lnputiG---"II,.,.,.-----i
Emitter (Gnd)

KSfl2012 PNP EPITAXIAL SILICON TRA~SlsroR

• Switching Circuit, ,Inverter, Interface circuit rQ-92
Driver circuit
• BUilt'in bias Resistor (R=47KO)
'. Complement to KSR1012 , .
Collector-Base Volta,ge VeBO -40 V

Collector-Emitter Voltage Vero -40 V
Collector Current Ie -100 rnA
Storage Temper!'l\ure Tstg -55-150 ·C 1. Emiller 2, Collector 3, 'ease
Collector-Base Breakdown Voltage BVceo 1c=-1001lA. 1,-0 -40 V

Collector-Emitter Breakdown Voltage' BVceo 1c=-1mA,la=0 -40 V
Collector Cutoff Current IceO Vca=..,.30Y. le=O -0.1 IlA
DC Current Gain hFE Vce=-5V. 1c=-1mA 100 600
'Collector Emitter Saturation Voltage Vce(sat) le=-10mA.la=-1mA -0.3 V
Output CapaCitance Cob Vca=-10V.le=0 5.5 pF
f=1MHz . '
Current Gain Bandwidth Product fy Vce=-10V.lc=-5mA. 200 MHz

Equivalent Circuit '

Collector (Output)
R
Base (lnputl~---'\""----I
Emiller (Gnd)

SWITCHING APPLICATION' (Bias Resistor Built In)

• Built in bias Resistor(R , =2.2KO, R,=47KO)
ABSOLUTE MAXIMUM RATINGS (Ta=25°C).

Collector-Emitter Voltage VCEO --'50 V
1. Emiller 2. CoHector 3. Base
I
Collector-Base Breakdown Voltage BVCBO Ic=-1.o,..A,IE=.o -50 V

Collector, Emitter Breakdown Voltage BVCEO Ic=-10.o,..A,IB=.o -5.0 V
Collector Cutoff Current ICBO VcB =-4.oV, IE=.o -0.1 ,..A
DC Current Gain hFE VcE =-5V,lc =-5mA 68
Collector-Emitter Saturation Voltage VCE(sat) Ic.=-1.omA.IB=-.o.5mA -.0.3 V
Current Gain-Bandwidth Product h VCE=-5mA,l c =-1.oV 2.0.0 MHz
Output Capacitance .Cob VcB =-1.oV,IE=.o 5.5 pF
f=1 ..oMHz
Input Off Voltage Vi(off) VcE =-5V,lc =-1.oO,..A -0.5 V
Input On Voltage Vi(on) VcE =-O.2V,lc =-10mA -1.1 V
Resistor Ratio R,/R 2 .0 . .042 .0.047 .0 . .052
Equivalent Circuit
Coilector (Output)
R,
Base (Input)
R,
EmItter (Gnd)
379
KSR2014 PNPEPITAXIAL SILICON TRANSISTOR

• Switching circuit, Inverter, Interface circuit Driver Circuit To-92
• Built in .bias Resistor(R,=4.7K!l, R,=47K!l)
Collector-Base Voltage VCBO -50 V'

Emitter-Base Voltage V.so -10 V
Junction Temperature Tj 150 .oC
1. emitter 2. Collector 3. Base
Characteristic S'ymbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO Ic=-1O,..A. 1.=0 -50 V

Collector-Emitter Breakdown Voltage BVc. c· Ic=-100,..A.IB=0 -50 V
Collector Cutoff Current ICBO VcB =-40V. 1.=0 -0.1 ,..A
DC Current Gain hF• Vc.=-5V.lc=-,5mA 68
Collector-Emitter Saturation Voltage . Vcdsat) Ic=-10mA.IB=-0.5mA -0.3 V
Current Gain-Bandwidth Product fr Vc.=-5mA.lc=-10V· 200 MHz
Output Capacitance Cob VcB=-10V.I.=0 5_5 pF
~~f. ~"
f=1.0MHz
Input Off Voltage Vi(off) Vc.=-5V.lc=-100,..A -0.5 V
Input On Voltage Vilon) VCE=-0.2V. Ic=-5mA -1.3 V
Input Resistor R, 3.2 4.7 6.2 K!l
Resistor Ratio R,/R 2 0.09 0.1 0.11 ;
Equivalent Circuit
Coliector (Output)
R.
Base (Input) ---"""""V---.--I
R,
Emitter (Gnd)
380
KSR21Of PNP EPITAXIAL SILICON TRANSISTOR

• Switching eirc!,!lt, Inverter, Interface circuit S0T-23
Driver circuit
• Built In bias Resistor (R,=4.7KO, R.=4.7KO)
ColleCtor·Base Voltage VCBIJ -50 V

Collector·Emitter Voltage Vceo -50 V
Emitter·Base Voltage VaJO -10 V
Collector DiSSipation Pc 200 mW
•
Storage Temperature Tstg -55-150 ·C 1. Base 2. Emitter 3. Collector
Collector· Base Breakdown Voltage BVcBO Ic=-10jAA,le=0 -50 V

Collector· Emitter Breakdown Voltage BVceo Ic= -1 OOjAA, la=O -50 V
Collector Cutoff Current ICBO Vca=-40V, le=O -'-0.1 jAA
DC Current Gain hFe Vce=-5V, Ic=-10mA' '30
Collector· Emitter Saturation Voltage Vcdsat) Ic=-10mA,la=-0.5mA -0.3 V
Current Gain·Bandwidth Product IT Vce=-5mA,lc=-10V 200 MHz
Output CapaCitance Cob Vca =-10V,le=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=-5V,lc=-100jAA -0.5 V
Input On Voltage Vi(on) Vce =-0.3V, Ic =-20mA -3 V
Input Resistor R, 3.2 4.7 6.2 KD

Collector (Output)
R,
Sase IInputlG--~""'-....,--i
R,
Emitter (Gnd)
381
KSR2101· PN'P .EPITAXIAL SILICON TRANSiSToR
INPUT.ON VOLTAGE DC CURAENTGAIN

1000
V'" -5V
R,-
A, ::'t:
500
300
'~
l/
30
J
-0.1 I-....J."'0"'3.L..lJU.J..Ju,.......J.-_!,.3.L._~5WJ-!",0,.......J._""3J,.0.L._J,J50~'00 0
3 5 10 30 50 100 300 500 1000
lc(mA~ COLLECTOR CURRENT Ie (mAl, COLLECIOR CURRENT

32a
VcE =5V
Rt ""'47K
Rz=4.7K
1000 230
0- 500
ifj
I 300
, ~
I
()
'00
a t\'
...
~
50
30
a
0
1\
.,
10
a 0.8
l
1.2 1 e 20 a 25 50 75 100
'\ 125 150 175 200
T.I·~ AMBIENT TEMPERATURE

382
KSR2102 PNP EPITAXIAL SILICON TRANSISTOR I
SWITCHING· APPLICATION (Bias Resistor Built In)

Driver circuit

•
Storage Temperature T~tg -55-150 ·C 1. Base 2. Emitter 3. Collector
.Collector-Base Breakdown Voltage BVcao Ic=-10jiA,IE=0 -50 V

Collector-Emitter Breakdown Voltage BVcEO Ic= -1 OOjiA, 18=0 -50 V
Collector Cutoff Current ICBO VCB=-40V,IE=0 -0.1 jiA
Collector-Emitter Saturation Voltage VCE(sat) Ic=-10mA,IB=-0.5mA -0.3 V
Current Gain-Bandwidth Product h VcE=-5mA,lc=-10V 200 MHz
Output CapaCitance Cob VcB=-10\i,IE=0 5.5 pF
... f=1.0MHz
Input Off Voltage Vi(off) VCE=-5V, 1c=-100,..A -0.5 V
Input On Voltage Vi(on) VCE=-0.3V,lc=-10mA -3 V
Input Resistor R1 . 7 10 13 KG

Collector (Output)
A,
Base (lnputlG--___"'Itr-----r---i
. A,
Emitter (Gnd)

-100 1000
Vce- 5V
Vce--O 3V R,-=10K
-50 R1 -10K RJ -10K
R2- 1OK 500
-3C
3\IIl
~ -10 -- I
B
>
i
-5
-3
IB 100
,/ '"
~ ~I-- Ii
,.I -1 150
-0.5 30
-0.3 /
-0.1 10
-0.3 -3 5 10 30 50 -100
3 5 10 3Q 50 100 300 500 1000
1~mA), COLLECTOR CURRENT Ie (IlIA), COLLECTOR CUIlRENT

320
1000
, VC£""SV
A.-10K
RJ ·,0K
230
240
~
~ 500
i5
~ 300 200
I I
!
~
...
}
100
50
30
I ~
...
0
t
1
180
120
80
40
" \.
r'\.
'\
10
o 0-4 0.8 1.2 1.8 2.0 ~
i
76 100
'\ 125 150 175 200
"'"
T,(°C), AMBIENT TEMPERATUIIE
V~OFf) (V) INPUT OFF VOLTAGE


.SOT-23
Driver circuit
• Built in bias Resistor (R.=22KIl, R,=22KIl')
ABSOLUTE MAXIMUM RATINGS· (Ta =25°C)

Emitter-Base Voltage VEBO ":'10 V
Collector-Base Breakdown Voltage BVcso Ic=-10~. IE=O -50 V

.,
Collector-Emitter Breakdown Voltage BVcEo Ic=-100,..A.le=0 -50 V
Collector Cutoff Current ICBO Vce =-:40V. IE=O -:-0.1 ~
DC Current Gain hFE VcE =-5V. Ic=-5IT1A 56
Collector-Emitter Saturation Voltage VCE(sat) Ic=-10mA,le=-0.5mA -0.3 V
Current Gain-Bandwidth Product fr VcE =-5mA,lc=-10V 200 MHz
Output CapaCitance Cob Vce =-10V.IE=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) VCE=-5V.lc=-100,..A -0.5 V
Input On Voltage Vi(on) VCE=-0.2V.lc=-5mA -3.0 V
Equivalent Circuit Collector (Output)

Marking
R,
Base (lnput)_-~"""--r--t
fl,
Emitter (Gnd)

KSR2103: PNp· EPITAXIAL SILICON TRANSISTOR

100 1000
v.. - 0.2V Vee 5V'
RJ=22K Rl=22K
Rz 22K ~J-22K
50 500
30 300
..
~ -- ~
!:i
~
5 10
IG 100
V""
'"~ 8
Z • i 50
f
~ / 30
I----'~
10
1
0.1 03 0.5 3 5 10 30 50 100 3 5 10 30 50 100 300 500 1000
lelmA), cOLLECTOR CURRENT Ie (mA). COLLECTOR CURRENT

320
"", VcE -5V
R.-22K
Rz=22K
1000 230
I-
...Z
500 e 240
§ 300
."
0
I
I ,. i 200
~
I
I- 160
~ i\.
,
100
, 120
"
~
~
50
~ 80
"
30
40
'\
10
o 04
1,..1
08 12 16 20 25 50 75
'\
100' 125 150 175 200
V~OFF.) (V) INPUT OFF VOLTAGE T.t°e). AMBIENT TEMPERATURE
'c8 SAMSUNG SEMICONDUCTOR


Driver circuit

Junction Temperature Tj °C
•
150
Characteristic Symbol Test' Condition Min Typ, Max Unit
Collector-Base Breakdown Voltage BVcBO Ic=-1O,..A. IE=O -50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-100,..A.le=0 -50 V
Collector Cutoff Current IcBO Vce =-40Y.IE=0 -0.1 ,..A
DC Current Gain hFE VcE =-5V.lc =-5mA 68
Collector-Emitter Saturation Voltage VCE(sat) Ic=-10mA.le==-0.5mA -0.3 V
Current Gain-Bandwidth Product fr VCE=-5mA.lc=-10V 200 MHz
Output Capacitance Cob Vce =-10V.IE=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) •
VcE =-5V.lc =-100,..A -0.5 V
Input On Voltage Vi(on) VcE =-0.3V.lc=-10mA -3 V
Input Resistor R, 32 47 62 KIl
Equivalent Circuit
R,
Base /lnput)_--"'WYtr-.------t
R,
, EmItter (Gnd)

KSB21 04 . PNPEPITAXIAL .SILICON TRANSISTOR
·INPUT ON VOLTAGE . DC CURRENT GAIN
-100 1000
VeE 5V
Vee"'. 0 3V A. 47K
R1-47K Ra-47K
. -SO A =47K 500
-3C
300
~
!:; -10 ~ , .....
~ !5
... -5
I·
ia; -3 ~ 100
~ 8
~
a
'$
-1 i 50
-0.5 30
-0.3
-0.1 -0.3 -1 10
-3 -5 -10 30 -50 -100
3 5 10 3050 100 300 500 1000
IclmA~ COUECTOR CURR~ Ie (mAl, COUECIOR CUIlRENT

320
VCE=5V
R.=47K
R2=47K
1000 230
Z 240
!Z.5oo
I~ I\.
w
I 300
i3
e&l 100 I I 160
~
~-'- • 120
}
50
~ 80
'I\.
30
\
0
10
o 0.8 1.2 16 20 o 25 SO 75 100
'\ 125 150 175 200
V~OFF)(V) INPUT OFF VOLTAGE • T,{°C), AMBIENT TEMPERATURE
388
KSR2105 PNP EPITAXIAL SILICON TRANSISfOR

• Switching Circuit, Inverter, Interface circuit 80T·23
Driver circuit
• Built in bias Resistor (R,=4.7KO, Rz =10KO)
ABSOLUTE MAXIMUM RATINGS

.
(Ta =25°C)
.
Collector· Base Voltage VCBO -50 V

Characteristic Symbol Test Condition Min Ty.p Max Unit
Collector-Base Breakdown Voltage BVcBO Ic=- 1OIlA,IE=0 -50 V

Collector· Emitter Breakdown Voltage BVcEo Ic=-100IlA,le=0 -50 V
Collector Cutoff Current IcBO Vce =-40V, (E=O -0.1 fAA
DC Current Gain hFE VCE=-5V, le=-5mA 30
Collector-Emitter Saturation Voltage Vee(sat) Ic =-10mA,le=-0.5mA -0.3 V
Current Gain-Bandwidth Product Cob Vcs =-10V,IE=0 5.5 pF
f=1MHz
Current Gain-Bandwidth Product fr VcE =-10V,lc =-5mA 200 MHz
Input Off Voltage Vi(off) VCE=-5V,lc=-100IlA -0.3 V
Input On Voltage I'Vi(on) VcE =-0.3V, le=-20mA -2.5 V

Collector (Output)
A, .
Base (lnput)~-~~--r--I
A,
EmItter (Gnd)
389 .
INPUT ON VOLTAGE DC CURRENTGAIN~ .,-
-100 -1000
VqE- 03V VCE- 5V
-50 Al-4 .7K -500 R, 4.71(
R2-10K R2-toK
-3C -300
Z
'"
I.. -10
-5
..illj
i
-100
-50
'--
'"
"
~ -3 U"
u
-30
~ "i
s-a- -1 '" -10 V
:>
-0.5 -5
-03 -3
./
-1
-01 -0.3 -1 -3 -5 10 -30 50 100 -0.1 -03 -3 5 -10 -30 -50 100
lc(rnA~ COUECTOR CURRENT Ic(mA~ COLLECTOR CURRENT

-10000 320
-5000
-3000 ~~;'~~7~V-= 280
II R -10~_
240
-1000
~
!:i
I=:~ I
200
~
I
I
!.
!!i-l00 160
~ -50
~
8
3
j
-30
-10
•
E
l
120
80
K.
- .
-5 '\
-3 40
1
-0.1 -0.3 0.5
I
0.1 0.9 1.1 1.3 -1.5 -1.7 -1.9 2.1 25 50 75 100
'\ 125 150 175 200
V(OFF)(V), INPUT OFF VOLTAGE T.,(·C~ AMBIENT TEMPERATURE -


Driver circuit
• Built in bias Resistor (R.=10KO, R,c47KO)
• Complement til KSR1106
Collector-Base Voltage VCeD -50 V

CoUector-Emitter Voltage VCEO -50 .v
Emitter-Base Voltage VEI)O -10 V
ELECTRICAL CHARACTERISTICS (Ta =25°C)'
Characteristic Symbol Test Condition M·ln Typ Max Unit
Collector-Base Breakdown Voltage BVceD Ic =- 1OIAA,IE=0 -50· V

Col/ector-Emitter Breakdown Voltage BVcEo Ic=-1OOIAA, 1a=0 -50 V
Col/ector Cutoff Current ICeD Vce =-40V, IE=O ":'0:1 /AA
DC Current Gain . hFE VCE=-5V,lc=-5mA '68
Collector-Emitter Saturation Voltage Vcdsat) 'c;=-10mA,le=-0.5mA -0.3 V
Output ·Capacitance Cob Vce =-10V,IE=0 5.5 pF
f=1MHz
Current Gain-Bandwidth Product h VcE =-10V,lc=-5mA .200 MHz
Input Off Voltage Vi(off) VcE =-5V,lc =-100/AA -0.3 V
Input Resistor R, 7 .10 13 KO

Collector (OutPtJt)
A,
Base (inputlO------"IN+r--.--t
A,
Emitter (Gnd)

INPUT ON VOLTAGE , DC CURRENT GAIN

-100 -1000
Vcs--O.3V Vce--5V
-50 R1=1OK A,-10K
-500 A, 47K
R~ 47K
-3C -300
~ -10 r---.
~
CJ -100
g
t:
i
-5
-3
I8 -50
-30
1/
...... 1..-'
1 :I -10
-0.5 -5
-0.3 -3
-1
-0.1 -0.3 3 -5 -10 -30 -50 -100 -0.1 -0.3 -1 -3 -5 -10 -30 -50 100
1c(mA), COLLECTOR CURRENT Ic(rnA~ COLLECTOR CURRENT

-10000 320
-5000 VCE=-5~
-3000 =; ~~~~ 280
-1000
II z 240
;-500 Ii!C
... •
f300 illis
200
~-100
I a:
w 160
I\.
~ ::: ,~
E
120
\. .'
j -10 l 80
"\.
-5
, -3 40
-1
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 25 50 75
'\
100 125 150 175 200
V'OFf)(V), INPUT OFF VOLTAGE T.(·~ AMBIENT. TEMPERATURE
c8 SAMSUN~ SEMICONDUCTOR 392

KSR2107 PNP 'EPITAXIAL SILICON TRANSISfOR

• SWitching Circuit, Inverter, Interface circuit 80T-23
Driver circuit
ABSOLUTE MAXIMUM' RATINGS (Ta =2S0C)
Chara.cteristic Symbol Rating Unit

Collec;tor-Emitter Voltage VCEO -50 V
I
ELECTRICAL' CHARACTERISTICS (Ta =2S0C)
Collector-Base Breakdown Voltage BVcBO Ic= -1 O,..A, le=O -50 V

Collector-Emitter Breakdown Voltage BVceo Ic= -1 OO,..A, la=O -50 V
Collector Cutoff Current leBO Vca =-40V, IE=O -0.1 ,..A
Collector-Emitter Saturation Voltage Vee/sat) le=-10mA,la=-0.5mA -0.3 V
Current Gain-Bandwidth Product Cob Vca =-10V,I E=0 5.5 pF
f=1MHz
Current Gain-Bandwidth Product h VcE=-10V,lc'-;'-5mA 200 MHz
Input Off Voltage Vi(off) VcE =-5V,lc =-100,..A -0.4 V
Input On Voltage Vi(on) VcE =-0.3V,lc =-2mA -2.5 V
Resistor Ratio R,/R2 0.42 0.47 .0.52

Collector (Output)
R,
Base (InputlG--~Mr--.-~
R,
Emitter (Gnd)
393
,
. KSR2107 P·NP EPITAXIAL SILICON TRANSISTOR
. INPUT ON VOLTAGE DC CURRENT GAiN

-100
VCE--O.3V -1000 _ _Vce·-5V
-SO -500 R,"'22K
R2-47K.
-3C -300
111 z
I~_100._.
i:!!
~
-10
=-
-6
i
-60
-3 ~ -30
~
·1 -1
".$
-O_S
-0_3
0 .:3:'-'.u.J."-';--..l.-_""3.1..L:'S'-'J.L_~10,.-J....oI
-0_ 1 L-....I..'f 3O"uS:I:I
OI.l.l,l10·0 -1__a,0:-:.l....1.._-':O:-l;_3,.w'-'J.L_l:--......._'=3utS.......l!:::0_~L.._t3O:'-"':S~0""'t._l00
Ic:(mA~ COLLECTOR CURRENT . 1c:(mA), COLLECTOR CURRENT·

-10000 320
-5000 VCE- 5V
-3000 R,=22K 280
R,-47K
-1000 / z 240
1- 500 ~
r i 200
'"
300
1
1 -100
-50
-30
I
160
120
i\.
j -10
-6
I 60 -- I\.
'\
-3 40
1 I
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 25 50 75 100
'\ 125 150 175 200'
T,(O~ AMmENT TEMPERATURE
c8SA~SUNG SEMICONDUCTOR 394


• Switching Circuit, Inverter, Interface circuit 80T-23
Driver circuit
• Built In bias Resistor (R.=47KO, R,=22KO)

I
Storage Temperature Tstg -55":150 ·C
Collector-Base Breakdown Voltage BVcoo le,=-10,..A,le=0 -50 V

Collector-Emitter Breakdown Voltage BVeeo Ic=-100,..A,la=0 -50 V
, Collector Cutoff Current Icso Vca =-40V,le=O -0.1 ,..A
DC Current Gain hFE Vce=-5V,lc=-5mA 56
Collector-Emitter Saturation Voltage VCE(sat) Ic=-10mA,la=-0.5mA -0.3 V
Current Gain-Bandwidth Product h Vce=-5mA,lc=-10V 200 MHz
Output Capacitance ' Cob Vea=-10V,le=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vee=-5V,lc=-100,..A -0.8 V
Input On Voltage Vi(on) Vce =-0.3V,lc=-2mA -4 V
Input Resistor R, 32 47 62 Kg
Reaistor Ratio R,/R 2 1.9 2.1 2.4
Equivalent Circuit
R,
Base (Input)O--~Mr--.----l
R,
Emitter (Gnd)
c8 SAMSUNG SEMICONDUCTOR , 395',

:KSR2108· PNP EPITAXIAL SILICON TRANSISTOR
INPUT ON VOLTAGE
-100 1000
VCE 5V
R,=47K
-50 ~;'~7~ Al """22K
500
-3C
300
V
..-
~ 7
,.
,s. -1
-0.5 30
·-0.3
0
-01
-=< ~1 ·3 -, -10 -30 -! ) - IDC
3 5 10 30 50 100 300 500 1000
lelmA}, COLLECTOR CURRENT Ie (mA), COLLECTOR CURRENT

320
VcE -5V
R,=47K
R~=22K
1000 230
0
.. 500
ffi
~ 300
I
1
i
'0
50
0
I
V 0
0 "" '1\
30 II '\
0
10
o 0.8 12 1.6 2.0 o 25 50 75 100
\ 125 150 175 200
T.,(°C), AMBIENT TEMPERATURE

V~OFF} (V) INPUT OFF VOLTAGE
396
KSR2109 PNP EPITAXIAL SIUCON TRANSISfOR

• Switching Circuit, Inverter, Interface circuit 50T-23
Driver circuit
• Built In bias Resistor (R=4.7KO,
ABSOLUTE MAXIMUM RATINGS (Ta =2,5°C)
Collector-Base Voltage' Vcso -40 V

Collector-Emitter Voltage VCE~ -40 V
Emitter·Base Voltage VESO -5 V
•
Storage Temperature Tstg -55":150 ·C
ELECTRICAL· CHARACTERISTICS (Ta = 25° C)
Col/ector-Base Breakdown Voltage BVceo Ic=-100,..A,IE=0 -40 V

Collector-Emitter Breakdown Voltage BVcEO Ic=-1mA,la=0 -40 V
Collector Cutoff Current lceo Vca =-30V,IE=0 -0.1 ,..A
DC Current Gain !l"E Vce=-5V,lc=-1mA 100 SOO
Col/ector-Emitter Saturation Voltage' VCE(sat) Ic=-10mA,la=-1mA -0.3 V
Output Capacitance Cob Vca= -1 OV; IE=O 5.5 pF
f=1MHz
Current Gain-Bandwidth Product fy VcE =-10V,lc =-5mA 200 MHz
Input ReSistor R, 3.2 4.7 S.2 KO
EqilivaJent Circuit Marking

Collector (Output)
R
Base IInput)B---~.,.,..---t
Emitter (Gnd)
c8 SAMSUNGSEMICONDUcrOP
397
KSR2109 PN·P EPITAXIAL SILICON TRANSISTOR
-'0000 _ _ _
VCE""-5V -1000 _ _ • Iclla=10/1
-5000 R=47K .. -500 R=4.7K
i-3OO~-+-}++H+~__~~H+~__4-++++~
-3000
~-'Oool·1I1I1I1 ~-,oo.- . ._
i-,OO_"_
~
1-500 II: -50
ia-30 1----++H+H-++-++H14+H---l-I-H+I+H
6 -300
g
-50
-30
i-'Oll. ._
~ -5
-3
-'Ol'0~'~_~0~3UW~_~'--~~3~_~5LU_~'O~~3~0~5~0~_~'oo -1 -3 -5 -10 -30 -50 -100 -300-500-1000
IclmA), COLLECTOR CURRENT IclrnA~ COLLECTOR CURRENT
POWER DERATING
320
280
0
0 '\
40
0
0 "" \.
25 50 75
"
100 125
T~·C). AMBIENT TEMPERATURE

150 175 200
c8 SAMSUNG SEMICO~DUCTOR 398


80T-23
Driver circuit
• Built In bias Resistor (R=10KO)

•
Storage Temperature Tslg -55-150 ·C 1. Base 2. Emitter 3. Collector
Charactetlstlc Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic=-100jAA. I~=O -40 V

Collector-Emitter Breakdown Voltage BVCEO IE=-1mA.la=0 -40 V
Collector Cutoff Current Icso Vca=-30V. IE==O -0.1 jAA
DC Current Gain hFE Vce=-5V.lc==-1mA 100 ·600
Collector-Emitter Saturation Voltage Vc~(sat) Ic""-10mA.la==-1mA 0.3 V
Output 'Capacitance Cob V~=-10V. IE=O 5.5 pF
f=1MHz
Current Gain-Bandwidth Product fT VCE=-10V. ic==-5mA 200 MHz·
Input Aesistor A 7 10 13 KO

Collector (Output)
R
Base (lnputJG--~Mr----t
Emitter (Gnd)
399
KSR2110 PNP' EPITAXIAL SILICON TRANSlsrOR
DC CURRENT GAIN COLLECTOR-EMITTER SATURAnON VOLTAGE
-'0000,~.II.RI
-5000
VeE"" 5V
A-10K
..-'°OO~.II.gi
-500
Ic,le- 10'1
R=10K
-3000
i
"-300
b--+~++~~--~-HH+~--+-++~~
'~-'00._'
!C __
S-30
II: -SO
~~~~~~~~-+++~
~
I-'
~
°ll_ _
-5
-3
-10~0~1~~Orl3~~-~1--~~3~5~_~'0~~3~0~_~5~0~_~'00 -1 3 5 -10 30 50-100 300 500-1000
lc(mA), COLLECTOR CURRENT lc(mA), COLLECTOR CURRENT
POWER DERATING
320
280
Z 240
~
~ 200
I
II: 160
~.
;0
... 120
i\.'\
f
l I\.
80
'\
40
25 50 75 100
'\126 -150 175 200
T~·C). AMBIENT TEMPERATURE
..
eSC SAMSUNG SEMICONDUCTOR 400
KSR2111 PNP EPITAXIAL SILICON· TRANSISTOR

• Switching Circuit, Inverter, Interface circuit S01-23
Driver circuit
Collector-Base Voltage Vcep -40 V

•
Collector-BaSe Breakdown Voltage BVcao 1c=-100"A.IE=0 -40 V

Collector-Emitter Breakdown Voltage BVcEO IE=-1mA. le=O -40 V
Collector Cutoff Current ICBO Vce=-30V. IE=O -0.1 "A
DC Current Gain hFE VCE=-5V. Ic=-1mA 100 600
Collector-Emitter Satyration Voltage Vce(sat) Ic=-10mA.le=-1mA -0.3 V
Output CapaCitance Cob Vce=-10V.IE=0 5.5 pF
f=1MHz
Current Gain-Bandwidth Product h VCE=-10V.lc=-5mA 200 MHz
Input Resistor R 15 22 29 KD
Equivalent Circuit Marking·

Collector (Output)
R,
Base (lnputlG--~"""----;
Emitter (Gnd)
ciS SAMSUNG SEMICONDUCTOR

401
.PNP .a:PITAXIAL SILICON TRANSISTOR
',' •••"" S,.. "
. SWITCHING APPLICATION (Bias Resistor Built In)

Driver circuit

Colleqtor Current. Ic -100 mA
Junction Temperature Tj '. 150 ·C
1. Base 2. Emiiter 3. Collector
ELECTRICAL CHARACTERISTICS (Ta =.25 °C)
Characteristic Symbol Teat Condition Min Typ "'ax Unit
Collector-Base Breakdown Voltage BVcao 1c"-100~. IE""O -40 V

Collector-Emitter Breakdown Voltage BVcEo Ic--lmA.IB'"'O -40 'V
Collector Cutoff Current lcao Vce=-30Y. le=O -0.1 ~
DC Current Galn . hFE VcE =-5V.lc =-lmA 100 600
· Collector Emitter Saturation Voltage VCE(sat) Ic"-10mA.IB--lmA -0.3 V
Output CapaCitance Cob VcB .... -l0V.IE=0 5.5 pF
f=lMHz
Current Gain Bandwidth Product fr Vce=-10V.lc=-5mA. , 200 MHz
Equivalent Circuit . Marking

Collector (Output)
R
Base (lnputiO--~"""---I
Emitter (Gnd)
C8~~MS~~'SEMICONDUcrOR 402
KSR2113, ' PNP EPITAXIAL SILICON TRANSISTOR

• Switching circuit, Inverter, Interface circuit Driver circuit 50T·23
• Built in bias Resistor(R.=2.2KO, R2=47KO)

Collector Current , Ic -100 mA
ELECTRICAL CHARACTERISTICS (Ta =

25 0 C)
Characteristic Symbol Test Condition Min. Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic= -1 O,.A, IE=O -50 V

.Collector-Emitter Breakdown Voltage BVcEo Ic=-100,.A,IB=0 -50 V
Collector Cutoff Current /
ICBO VcB =-40V, IE=O -0.1 ,.A
DC Current Gain hFE VcE =-5V, Ic =-5mA 68
Collector-Emitter Saturation Voltage VcElsat) Ic= -1 OmA, IB= -0.5mA -0.3 V
Current Gain-Bandwidth Product fr VcE =-5mA,lc =-10V 200 MHz
Output Capacitance Cob VcB =-10V,IE=0 5.5 pF
f=1.0MHz
Input Off Voltage Viloff) VCE=-5V,lc=-100,.A -.0.5 V
Input On Voltage Vilon) VCE=-0.2V,lc=-10mA -1.1 V
Input Resistor R, 1,5 2.2 2.9 KO
Resistor Ratio R,/R 2 0,042 0,047 0.052
Equivale,nt Circuit Marking

Coliector (Output)
R,
Base (Input)
R,
Emitter (Gnd)
c8 SAMSUNG. SEMICONDUCTOR
403
KSR21.14 PNP EPITAXIAL· SILICON TRANSISTOR
.SWITCHING APPLICATION (Bias Resistor Built In) .

• Switching circuit, Inverter, Interface circuit Driver circuit SOT-23
~ Built In bias Resistor(R.= 4.7KO, R,=47KO)
• Complement to KSR1114 .
Collector-Base Voltage VCBO . -50 V

Junction Temperature Tj. 150 ·C
,. Base 2. Emitter 3. Collector
ELEC.TRICAL CHARACTERI$TICS (Ta =25°C)
Characteristic Symbol Test Condition M.ln Typ Max Unit
C~llector-Base Breakdown Voltage BVCBO Ic=-10,..A.le=0. . -50 V

Collector-Emitter Breakdown Voltage BVCEo Ic=-100,..A.le=0 -50 V
Collector Cutoff Current ICBO Vce=":'40V. le=O -0.1 ,..A
DC Current Gain hFE Vce=-5V.lc=-5mA 68
Collector-Emitter Saturation Voltage Vce(sat), Ic=-10mA.le==-0.5mA -0.3 V
Current Gain-Bandwidth Product fr Vce=-5mA. Ici=-10V 200 MHz
Output Capacitance Cob Vce=-10V.le=0 5.1;i pF
f='1.0MHz
Input Off Voltage Viloff) Vce=-5V.lc=-100,..A -0.5 V
Input On Voltage Vilon) Vce=-0.2Y. Ic=-5mA -1.3 y.
Resistor Ratio R,/R. 0.09 0.1 0.11 1
Equivalent Circuit Merklng

Collee'or (OutRut)
R,
Base (Input) ----.,-"""""r_-r---l
R,
. Emitter (Gnd)
c8 SAMSUNG SE~ICONDUCTOR 404

KSR2201 PNP EPITAXIA~ SILICON TRANSISTOR
SWITCHING APPLICATlON (Bias Resistor Built In)

• Built in bias Resistor(R,=4.7KO, R,=4.7KO)
• Complement' to KSR1201

Collector Curr,ent Ic -100 mA
Storage Temperature Tstg -55-150 ·C.
I
1 Emitter 2, Collector 3. Base
, ELECTRICAL CHARACTERISTICS (Ta =25°C)

•
Collector-Base Breakdown Voltage BVcEo Ic =-10,..A,IE=0 -50 V

Collector-Emitter Breakdown Voltage BVcEo Ic =-100,..A, Is=O -50 V
Collector Cutoff Current lcao Vcs=-40V,IE=0 -0.1 /J A
Collector-Emitter Saturation Voltage VCE(sat) Ic=-10mA,ls=-0.5mA -0.3 V
Current IGain-Bandwidth Product fr VcE =-5mA,lc=-10V 200 MHz
Output Capacitance Cob Vcs""-10V,IE=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi (off) VCE=-5V,lc =-100,..A -0.5 V
Input On Voltage Vi(on) VcE =-0.3V,lc=-20mA -3 V,
Equivalent Circuit
Collector (Output)
R,
Base (Input) ----"..vV--,--i
R,
'------I Emitter (Gnd)
405
PNP .EPITAXIAL 'SILICON TRANSISTOR
, I l ' , "' . H •
DC, CURRENT G~IN

INPUT ON VOLTAGE
.1000
VeE ~5V
R.~ 4.7K
A2~ ~.7K ,
500
i! 300
C
c:I
...
Z '"
w ~
~,
:>
(.) 100
l/
g
50
1
30
1/
/
-01 -03 -3 -5 -10 30 50 -100 10

1 3 5 10 50 100 3006001000
lc4mA), o,COLLECTOR CURRENT
'>. '.'.,.
INPUT OFF VOLTAGE

POWER DERATING
•',w0
1000
. .1 VCE-SV
R, -4.7K
R,-4.7K 350
'" "
Ii 500
I 300 0
1\
I \
I
1\
I 0
100
0
\
~ 50
30
1\
0
r"\.
10
to, 0.4 0.8 1.2 1.6 2.0 25 50 75 100
\ 125 150 175 200
T,(°C), AMBIENT TEMPERA1\IRE

V~OFF) IV) INPiIT OFF VOLTAGE
c8
i., . . ,$ '. t . . ., . ,"" , ,j .],
SAMSUNG SEMICONDUCTOR ,406 '


To.-92S
• Switching circuit, Inverter, Interface circuit Driver circuit
• Built In bias Reslstor(R,=10KO, R,=10KO)
Collector-Base Voltage VCeI:J -50 V

Emitter-Base Voltage VeeI:J -10 V
Collector Current Ic ~10Q mA
Collector Dissipation Pc 300. mW
Junction Temperature Tj 150. °C
Storage Temperature Tstg -55-150. °C
•
Collector-Base Breakdown Voltage BVceI:J Ic=-lQjAA,le=Q -50. V

Collector-Emitter Breakdown Voltage BVceo Ic=-lQQjAA,la=Q -50. V
Collector Cutoff Current ICeI:J Vca=-4QV,le=Q -0..1 ,.,.A
DC Current Gain hFE Vce =-5V, Ic=-5mA 30.
Collector-Emitter Saturation Voltage Vce(sat) Ic =-lQmA,la=-Q.5mA -0..3 V
Current Gain-Bandwidth Product h Vce=-5mA, ic""-lQV 20.0. MHz
Output CapaCitance Cob Vca=-lQV,le=Q 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce =-5V,lc=-lQQjAA -0..5 V
Inpt,lt On Voltage Vi(on) Vce=-Q.3V,lc=-lQmA -3 V
Input Resistor Rl 7 10. 13 KO
Resistor Ratio Rl/R2 0..9 1 1.1
Equivalent Circuit
Collector (Output)
R,
Beee (Input) ---"~.,-..,..--I
Emitter (Gnd)
40.7
DC CURRENT GAIN
INPUT ON VOLTAGE
-100 1000
VCE-5V
R1 z 10k
-50 ~~_=;O~t3V - Rz.... 10K
-3C R2=1OK 500
300
~
C Z
!:i -10 r-- C
!Z CI
....
....
:>
i!;
-5
-3
Z
W
a:
a: 100 l/~,
::>
~ 0
,.
C
J!. -1 0
Q
1
50
Wi"
-0.5 30'
-03 /
-01 10
-0.3 -1 3 -5 -10 -30 -50 -100 3 5 10 30 50 100 3005001000
lc(mAl. COLLECTOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING
400
,
VCE=-5V
R.=10K
1000 A2 -10K 350
....
Z
500 Z 30C
ffia:
:>
0
a:
300
~
.,~
., 250 1\'\
...0 is
200 \.
~ iii
j
0
0
100
.
3l
0
~
150 \
} 50
, 30
l
E
100 ~
0
1\
10
0 0-4 0,8 1-2 L6 2,0 o 25
i
50 75 100
\ 125 150 175 200
T,(°C(, AMBIENT TEMPERATURE

c8 sAMSUNG SEMICONDUcroR 408


TO-92S
Collector-Base Voltage Vcso -50 V

Collector-Emitter Voltage VCEo -50 V
Emitter-Base Voltage VEso -10 V
•

t
Characteristic Symbol Test C6ndltlon Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO Ic=-1OjoIA, le=O -50 V

Collector-Emitter Breakdown Voltage BVceo Ic= -1 OOjoiA, Is=O -50 V
Collector Cutoff Current . leBO Vce=-40V, le=O -0.1 joIA
DC Current Gain hFE VcE=-5V. Ic=-5mA 56
Collector-Emitter Saturation Voltage Vcelsat) Ic=-10mA.ls=-0.5mA -0.3 V
Current Gain-Bandwidth Product fr Vce=-5mA.lc=-10V 200 MHz
Output Capacitance Cob Vce=-10V.le=0 5.5 pF
f=1.0MHz
Input Off Voltage Viloff) VcE =-5V.lc=-100joiA -0.5 V
Input On Voltage Vilon) VCE=-0.2V.lc=-5mA -3.0 V
Input Aesistor A, 15 22 29 KO
Aesistor Aatio A,/A 2 0.9 1 1.1
Equivalent Circuit
Collector (Output)
A,
Base (Input) ----AvvV'----.--I
A,
Emitter (Gnd)
409
KSR2203 PNP .EPITAXIAL .SILICON TRANSISTOR
'00 1000
VeE- 0.2V VeE ':SIII
50
R.-22K
.R,-22K
500
..
R.a.22K
~ 22K
30 300
~
...g~ II c:J
i11/ . /~
'0 II: 100
i 'I
!i
0
l!l 50
~ 3 I
I
~
1 30
/'
"",,""
, I '0
01 0305 I 3 5 10 . 30 60 100 3 5 10 30 50' 100 300 500 1000
lc(mAI COLLECTOR CURRENT lc(mAI COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
VCE=5V
400 ,
A t =22K
ff
tooo. R!-l2K 350
iII: 500 30C
g
11/
II: 300 I 250
\,
II:
I !l25
~ I 200
\.
0
......
11/
0
'00
I.. '50
\
0
}
50
30
~
l '00
1\
50 \.
'0
o 0.4 0.8 12 1.6 2.0 o 25 50 75 100
\ 125 150 175 200
T"'°ct. AMBIENT ~TURE

V,(OFFl (V} INPUT OFF VOLTAGE
410
KSA2204 PNPEPITAXIAL SILICON TRANSISTOR

TO-925
Characteristic' Symbol Rating Unit

•
1, Emiiter 2, Collector 3, Base
,Characteristic Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO c

I =-10,.A,le=0 -50 V
Collector-,'Emitter Breakdown Voltage BVceo Ic=-100IlA,IB=0 -50 V
Collector Cutoff Current ICBO VCB = -40V, le=O -0.1 ,.A
DC Current Gain hFe VcE =-5V, Ic =-5mA 68
Collector-Emitter Saturation Voltage Vce(sat) Ic=-10mA,I B =-,0.5mA -0.3 V
Current Gain-Bandwidth Product IT Vce =-5mA,lc=-10V 200 MHz
Output Capacitance . Cob ; VcB =-10V, le=O 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) VCE=-5V,lc=-100,.A -0.5 V
Input On Voltage Vi(on) Vce=-0.3V,lc=-10mA -3 V
Resistor Ratio R,/R 2 0.9 1 1.1 '
Equivalent Circuit
Collector (Output)
R,
Base (Input) --,--J'''''''V'"-r--I
R,
Em,tter (Gnd)

KSR2204 PNP .EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN
INPUT ON VOLTAGE
1000
-100 VeE ~5vl
Vce~ 0.3V R,- 47K
-50 R1 ""47K R.- 47K
A2=47K 500
-3C
w 300
.i!
CO
g
-10 f--
....
Z
C
-5 ~
~ -3
Z
w
i! II: 100
~
II:
:>
(.)
I
:>
-1 (.)
Q
50
-0.5 1 30
-0.3 1--
-0.1 -0.3 -1 3 5 10 30 -50 -100 10

3 5 10 30 50 100 300 5001000
IdmA), COLLECTOR CURRENT
IclmA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING'
VCE-5V
400
R, "" 47K
1000 RI -47K ·350
,
~ 500
1300 I
\
"\
(.)
~ I ~
II: 200
roo i ,150
J
50
30
I
I
_ 100 1'\.
0
\.
10
o 0.4 0.8 18 2.0 o 25 50 75
\
100 125 150 175 200
V~OFF) (V) INPUT OFF VOLTAGE T"°O), AMBIENT TEMPERATURE
c8 SAMSUNG SEMICONDUcToR
412

• Switching Circuit, Inverter, Interface circuit TO·92S
Driver circuit
• Built in bias Resistor (R.=4.7KO, R.=10KO)
.. Complement to KSR1205

•

'.
Coliector·Base Breakdown Voltage BVcBO Ic =-10,.A,le=0 -50 V

Collector· Emitter Breakdown Voltage BVceo Ic=-100,.A,la=0 -50 V
· Collector Cutoff Current IcBO Vca=-40V, le=O -0.1 ,..A
DC Current Gain hFe Vce =-5V, Ic=-5mA 30
Collector· Emitter Saturation Voltage Vce(sat) Ic=-10mA,la=-0.5mA -0.3 V
Current Gain·Bandwidth Product Cob Vca=-10V,le=0 5.5 pF
f=1MHz
Current Gain·Bandwidth Product fr VCE='-10V,lc=-5mA 200 MHz
Input Off Voltage Vi(off) VCE=-'5V, Ic =-10o,..A -0.3 V
Resistor Ratio R,IR2 0.42 0.47 0.52
'.
Equivalent Circuit
Collector (Output)
A,
Base (lnputtlG-----'ItNIo...----.--I
A,
Emitter (Gnd)
413
,KSA220S·. PNPEPrrAXIAL, SILICONTAANSISFOA
-'OO_. .
~
-3C
INPUT ON VOLTAGE
mVCE--O.3V
~~~
A.-'OK -'OOO."~
~
-500
-300
VeE"" 5V
R1 4.7K
'R:!_1OK'
"-'OO.~_"'"
I=:~
g
~
1-,
:>
-0.5
. . ._
-0.3
i_'OIIV• •
-5
-3
L
-0.1 0.3 -, 3 5 10 -30 50 100 -~-~O"~~O~3~~-~'~~~3~5~~'~O--~-~30*=t..0~-'~0'0

IdmA), COLLECTOR CURRENT
. 1dmA), COLLECTOR CURRENT
'.
-'0000 400r---.---.---.---.---.---.---r--,
-5000 Vee -5V-=
-3000
A,=4.7K-= 350
R2=10K
F
-'000
!i-500
a ~ , "
t aoo
I
r 0 I\.
;e-'O:::O ~
20
,. 0
\:
"
1\
j ..
E
-.
-10
-3
'00
0
I\.
, I 25 50 75
~
100 125 150 175 200
-0.1 -0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 -2.1
V,(OFf)(V), INPUT Off VOLTAGE T,("e), AMiiiENT TEMPeR~TURE
414
KSR2206 PNPEPITAXIAL SILICON TRANSISTOR

• Switching Circuit, Inverter, Interface circuit TO-92S
Driver circuit
• Built in bias Resistor (R, =10KO, R,=41KO)

Collector Current .Ic -100 rnA
•
CharacterIstic Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBO le=- 1OI'A,le=0 -50 V

Collector-Emitter Breakdown Voltage BVeeo le= -1 OOI'A, 18=0 -50 V
. Collector Cutoff Current leBO VeB=-40V, le=O -0.1 ,.,A
DC Current Gain hFE Vce=-5V,le=-5mA 68
Collector-Emitter Saturation Voltage VeE(sat) Ic=-10mA,18=-0.5mA -0.3 V
Output Capacitance Cob VCB=-10V,IE=0 5.5 pF
f=1MHz
Current Gain-Bandwidth Product h Vce=-10V,lc=-5mA 200 MHz
Input Off Voltage Vi(off) Vce=-5V,l c =-100,.,A -0.3 V
Input On Voltage Vi(on) Vce=-0.3V,lc=-1mA -1.4 'V
Input Resistor R, 1 10 13 KG
Resistor Ratio R,/R2 0.19. 0.21 0.24
,
Equivalent Circuit
R, .
Base (lnput'~---4I\""'--.---t
R,
Emitter (Gnd)
.c8 SAMSUNG SEMICONDUCTOR 41Q'

-100
VCE -O.3V
-SO
-30
~
a...
>
-10
,-5
iZ -3
l!!
~
,.I -1
-0.5
-03
-0.1 -0.3 -3 5 10 30 -50 -100 '-'1~0~'~~0~3~~_~'--~_~3~5~_~'~0--~_~30~_L5~0~_~'00
Ic(mA~ COLLECTOR CURRENT Ic(mA~ COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
-10000 400
~';"~~~~
-5000
-3000 350
R2""'47K_
-1000
II
!i-soo
111-300
I\,
\
~ \.
r~:
II: 200
~ 150
\
i-'O l
Q.. 100
\
-5
-3 0
\.
1
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 ·25 50 76 100
\.125 ·150 175 200
V.OFF)(V), INPUT OFF VOLTAGE T,(·C~ AMBIENT TEMPERATURE
.c8 SAMSUNG SEMICONDUCTOR

416

• Switching Circuit, Inverter, Interface circuit TO-92S
Driver circuit
• Built in bias Resistor (R,=22K 0 R,=47KO)
ABSOLUTE MAXIMUM .RATINGS (Ta =25°C)
Collector-Base Voltage Vcao -50 V-

Coliector-EmittE;lr Voltage VCEO -50 'V
Emitter-Base Voltage ¥Eao -10 V
•
Storage Temperature Tstg -55-150 °C ,. Emitter 2. Collector 3. Base
Collector-Base Breakdown Voltage BVcao Ic= -1 O,.A, IE=O -50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-100,.A,le=0 -50 V
Collector Cutoff Current 1980 Vce =-40V, IE=O -0.1 ,.A
Collector-Emitter Saturation Voltage Vcdsat) Ic=-10mA,le=-0.5mA -0.3 ,V
Current Gain-Bandwidth Product Cob Vce =-10V,IE =0 5.5 pF
f=1MHz
Current Gain-Bandwidth Product fr VCE=-10V,lc=-5mA 200 MHz
Input Off Voltage Vi(off) VCE=-5V, Ic=-100,.A -0.4 V
Input On Voltage Vi(on) VCE=-0.3V, Ic=-2mA -2.5 V
Equivalent Circuit
Collector (Output)
R,
Base (Inputl_---"\,..,.,~-r---l
R,
Em,tter (Gnd)
..
cR SAMSUNG SEMICONDUCTOR
417
INPUT ON VOLTAGE DC CURRENT GAIN .

-100 -1000
VCE= 03V Vce=-5V
-50 AI 22K -500 R, 22k
~""47K
R..-47K
-30 -300
OJ
~
~ -10
" -100
"
g
..
!;
~
-5
-3
I.
U
-50
-30
.~
I -1 1 -10 /
;:
-05 -5
-03 -3 ,-----
- 0.3 - 3 5 - 10 -30 60 100
lc(mA~ COLLECTOR CURRENT lc(mA~ COLLECTOR CURRENT

-10000 400
-5000
-3000 ~~-22~= 35a
R,=47K_
/
I~
-1000
!ii-500
C£ -300 a 1\
B . I
"- 1\
!!i-loo 200
~
::I
-50
-30
I 15a
\
8
j -10
!..~ 100
1\
-5
-3 a t\.
-1
-0.1 03 0.5
I-
I
0.7 0.9 1,1:-13 1.5 1.7 -1.9 21 25 50 75 100
\ 125 150 175 200
VjOFl')(V), INPUT OF!' VOLTAGE T.('C), AMBIENT TEMPERATURE
418

• Built in bias Resistor (~,=47KO, R,=22KO)

1. Emitter 2. Collector 3. Base .
I
Collector-Base Breakdown Voltage BVcao Ic= -1 01olA. le=O -50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=- 1OOIAA.IB=0 -50 V
Collector Cutoff Current lcao VCB=-40V,le=0 -0.1 lolA
DC Current Gain hFE Vce=-5V; Ic=-5mA 56
Collector-Emitter Saturation Voltage VCE(sat) Ic=-10mA.IB=-0.5I}lA -0.3 V
Current Gain-Bar\dwidth Product h VCE=-5mA,lc=-10V 200 MHz
Output Capacitance Cob VcB=-10V,le=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=-5V,lc=- 1OOIAA -0.8 V
Input On Voltage Vi(on) Vce=-0.3V,lc=-2mA -4 V
Input Resistor R.l 32 47 62 KO
Equivalent Circuit
Collector (Output)
R,
Base (Input)
R,
Emitter (Gnd)

KSR2208 .PNP EPITAXIAL S~LICON TRANSISTOR
DC CURRENT GAIN
INPUT ON VOLTAGE
IDOO
-100 Vc.;L -bV
R,-47K
-50 ~CE-':~.~
~,.
R.- 22K
500
-3C
300
Z
..
C
CJ
Z
W
V
II:
II:
::> 100
I-<""' 0
,
CI
c
50
~
J:
-0.5 30
-03
: -0.1 -0. a -, I - 1- )0 10
1 3 5 to 30 50 tOO 300 600 1000
1c(mA), COLLECTOR CURRENT
Ic(mA) COLLECTOR CURRENT
INPUT OFF VOLTAGE

POWER DERATING
400
1000
I VCE=5V
R,-47K
I
R,=22K 350
i 2~
z 30C
I
I
1\\
II: 200 \.
~ 150
\
~
..
E
100
'\
0
~
10
o 0.4 08 1.2 1 e 2.0 25 50 75 100
\ 125 150 175 200
T,(°O), AMBIENT TEMPERATURE

420
KSR2209 PNP EPITAXIAL SILICON' TRANSISTOR
SWITCHING APPLICATION' (Bias Resistor Built In)

• Switching Circuit, Inverter, Interface circuit TO·925
Driver circuit
• auilt in bias Resistor (R=4.7KD)
• Complement, to K5R1209
Collector-Base Voltage VCBO ' -40 V

Junction Te.mperature Tj 150 ·C
•
Cc:>lIector-Base Breakdown Voltage BVceo Ic= -1 OO~, IE=O -40 V

Collector-Emitter Breakdown Voltage BVCEo Ic=-1mA,la=0 -40 V
Collector Cutoff Current ICBO Vca =-30V,IE=0 -0.1 ~
Collector-Emitter Saturation Voltage' VCE(sat) Ic =-10mA,la=-1mA -0.3 V
Output CapaCitance Cob Vca=-10V,IE=O 5.5 pF
f=1MHz
Current Gain-Bandwidth Product h VCE=-10V,lc=-5mA 200 MHz
Input Resistor R, 3.2 4.7 6'.2 KO
Equivalent Circuit Collector (Output) ,
R,
Base (lnput~----«i,.,..---:--t
Emitter (Gnd)
421
,'t<SR2209 PNP EPITAXIAL SILICON TRANSlsroR
'; ,
DC CURRENT GAIN· COLLECTOR-EMITTER SATURATION VOLTAGE
_,0000_
-5000
_
Vee -5V
A 4.7K
__
'
°OO1l111i R4~
Icl1e- 1 11
r
W-
-3000
300
_
z
~-'°OO:II-
i~-'°orllllllli
'!i
1- 500
u -300
~ -50
-30
~ ~~~*-~~~~~tffi
i
i- ,OO _ , , _ i- 'O
_ , , _
-50 ~ -'5
-30 -3
-1 O_,I;;O~.I...J.~_!;Ot3.LU.l_~';--'-_~3;-1:'_5tL:~11;,0;--::;3:!;0-:_:i:50if:~,00 -1 L-..J.-_.I;:3.1..l:5,1-L1~,0!:-.J.._-:30::-'::l;l50;1_~,:i;00n-:"30*,Ot-:-li5;\;00~--!t1000
loIlIIA), COLLECTOR CURRENT Ic(mA). COLLECTOR CURRENT
POWER DERATING
400
350
z 300
~.
1 25
0 ,
a: 200 1\
I 15 0
\
~. 100
1\
0
1\
25 50 75 100
\ 125 150 175, 200
T,(°Cl. AMBIENT TEMPERATURE

KSR2210 . PNP EPITAXIAL SILICON TRANSISTOR

Driver circuit
• Complement to KSR121 0
Collector-Base Voltage VCBCJ -40 V

Emitter-Base Voltage VEBCJ -5 V
Collector-Base Breakdown Voltage BVcso Ic=-1001olA.IE=0 -40 V.

Collector-Emitter Breakdown Voltage BVcEo IE=-lmA.la=O -40 V
Collector Cutoff Current ICBO VCB"'" -30V. IE"'"O -0_1 IlA
DC Current Gain hFE VcE "'"-5V.lc"'"-lmA 100 600
Collector-Emitter Saturation Voltage Vcdsat) Ic"'"-10mA.IB "'"-lmA 0_3 V
OutPut Capacitance Cob VCB"'"-10V.IE=0 5_5 pF
f=lMHz
Current Gain-Bandwidth Product h VCE=-10V.lc=-5mA 200 MHz
Equivalent Circuit
Collector (Output)
A
Base (lnputlO--~Mr----f
Emitter (Gnd)
c8 SAMSUNG SEMICONDUctOR
423
~SA2210 PNP. EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN COLLECTOR-EMmER SATURATION VOLTAGE
-'0000~~~~11~'111~~~~11
-5000
-3000
~c:.10~5V_500
'-1000
!-300
IeIla-1Ot1
A-10K
z ~
..B~-'°OO~I--~'-III!IIIIII
'~-100 --
~
II! -500 ~ -50
-300 ;l -30
Il_ _
g r-++~~-+++~~~~~
!l -10
i- lOO
-50 ~ -5
-30 -3
-1 3 5 10 30 50 100 300 500 1000
IdmA~ COLlECTOR CURRENT Id~ COLLECTOR CURRENT
POWER DERATING
400
350
0 1\\
.. 200 \.
I 150 \
.f. . 100 \
0 I\.
25
i
50 75 100
\ 125 150 175 200
T~OC). AMBIENT TEMPERATURE
424
KSR2211 ,PNP EPITAXIAL SILlCO~ TRANSISTOR

Driver circuit
• Built in bias Resistor (R=22KI1)

Emitter-Base Voltage VESO -5 V
Collector Dissipatiofl Pc 300 mW
Storage Temperature Tstg -55-150 °C 1. Emiiter 2. Collector 3. Base
Characteristic Symbol Test Condition Min Typ Max UnIt
Collector-Base Breakdown Voltage BVcao Ic"'- l OOjLA,le=O -40 V

Collector-Emitter Breakdown Voltage BVcEO IE=-1mA,le=0 -40 V
Collector Cutoff Current Icso Vcs =-30V,IE=0 -0,1 jLA
DC Current Gain hFE VCE. ... -5V,lc=-lmA 100 600
Collector-Emitter Saturation Voltage Vce(sat) Ic=-10mA, le=-lmA -0.3 V
Output Capacitance Cob Vcs =-10V,le=0 5.5 pF
f=lMHz
Current Gain-Bandwidth Product IT VCE.=-10V,lc =-5mA 200 MHz
Input Resistor R 15 22 29 KI1
Equivalent Circuit
Collector (Output)
R
Base (lnput.~---'\""'---;
Emitter (Gnd)
425
kSR2212, PNP EPITAX'iAL SILICON TRANSISTOR

Driver' circuit'
• Built in bias Resistor (R=47KIl) ,

Collector-Emitter Voltage Vceo , -40 V
Emitter-Base Voltage Veoo -5 V
Storage Temperature Tstg -55-150 ·C 1, Emiiter 2, Collector 3, Base
Collector-Base Breakdown Voltage BVcBO Ic= -1 OOj.lA, le=O -40 V

Collector-Emitter Breakdown Voltage BVceo Ic"'-1mA,la=0 -40 V
Collector Cutoff Current lcao Vea= -30V, le=O -0.1 j.lA
DC Current Gain hFE Vce=-5V,lc=-1mA 100 600
Collector Emitter Saturation Voltage Vce(sat) Ic=-10mA,la=-1mA -0.3 V
Output Capacitance Cob Vea =-10V,le=0 5.5 pF
f=1MHz
Current Gain Bandwidth Product h ' Vce=-10V, Ic=-5mA, 200 MHz
Input Resistor R 32 47 62 KIl
Equivalent Circuit
Collector (Outputl .
R
Base (Inputl'G--~""""----1
Emitter (Gndl
c8 SAMSUNG SEMICONDUCTOR. '

426
KSR2213 / .

T0-925
• Switching circuit, Inverter, Interface circuit Oriver circuit
• Built in bias Resistor(R,=2.2KO, R,=47KO)
Collector· Base. Voltage VC80 -50 V

Emitter·Base Voltage Ve80 -10 V
Storage Temperature Tstg . -55-150 °C
•

Coliector·Base Breakdown Voltage BVCBO Ic=-lOjlA, le=O -50 V

Collector· Emitter Breakdown Voltage BVceo Ic =-100jlA,18=0 -50 V
Collector Cutoff Current ICBO Vca =-40V,le=0 -0.1 jlA
DC Current Gain hFE Vce=-5V, Ic=-5mA 68
Coliector·Emitter Saturation Voltage Vce(sat) Ic=-10mA,IB=-0.5mA -0.3 V
Current Gain·Bandwidth Product fr VcE =-5mA,lc=-10V 200 MHz
Output Capacitance Cob VC8=:-10V.le=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce =-5V,lc=-100jlA -0.5 V
Input On Voltage Vi(on) Vce=-O 2V, Ic=-10mA -1.1 V
Input Resistor R, 1.5 2.2 2.9 KD
ReSistor Ratio R,/R2 0.042 0.047 0.052
Equivalent Circuit
Coliector (Output)
A,
Base (Input) ---"""',1'--,--1
A,
Emitter (Gnd)
427
KSR2214 PNP EPITAXIAL SiLICON TRANSISTOR
SW'ITCHING APPLICATION (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit Driver circuit 10-928
• Built in bias Resistor(R,=4.7KIl, R2=47KIl)
.ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Emitter-Base Voltage VEBO -10 V •
Collector' Dissipation Pc 300 mW
1. Emitter 2. Col/ector 3. Base
Collector-Base Breakdown Voltage BVCBO Ic=-10fJA.IE=0 -50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-100fJA. IB=O -50 V
Collector Cutoff Current ICBO VCB= -40V. IE=O -0.1 fJA
DC Current Gain hFE Vce =-5V.lc=-5.mA 68
Collector-Emitter Saturation Voltage .vce(sat) Ic=-10mA.IB=-0.5mA -0.3 V
Current Gain-Bandwidth Product .fr Vce =-5mA.lc=-10V 200 MHz
Output Capacitance Cob VCB=-10V.le=0 5.5 pF
f=1.0MHz
Input Off Voltage Vi(off) Vce=-5V.lc=- 100fJA -0.5 V
· Input On Voltage Vi(on) VCE= -0.2V. Ic=.- 5mA -1.3 V
Input Resistor R, 3.2 4.7 6.2 KG
Resistor Ratio R,/R 2 0.09 0.1 0.11'
Equivalent Circuit
Collector (Output)
R,
Base (Input) ---....vv---,--1
R,
Emltt~r (Gnd)
.428
2N3903 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR

• Collector-Emitter Voltage: V~o=4OV TO-92
• Collector Dissipation: Pc (max)=625mW

Storage Temperatur~ Tstg -55-150 °C
• Refer to 2N3904 for graphs 1 Emitter 2. Base 3. Collector
Characteristic Symbol Test Conditions Min 1\tp Max Unit
Collector-Base Breakdown Voltage BVcao Ic =10pA, Ie =0 60 V

"Collector-Emitter Breakdown Voltage BVceo Ic=1mA,la=0 40 V
Emitter-Base Breakdown Voltage BVeBO le=10pA,lc=0 6 V
Collector Cut-off ·Current Icex Vce =30V, Vea =3V 50 nA
Base Cut-off Current leL Vcr:=30V, Vee=3V ·50 nA
"DC Current Gain hFe Ic=0.1mA, Vce:=1V 20
Ic=1mA, Vce=1V 35
Ic=10mA, Vce=1V 50 150
Ic =50mA, Vce=1V 30
Ic=100mA, Vce=1V 15
"Collector-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=1mA 0.2 V
Ic=50mA,le=5mA 0.3 V
"Base-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=1mA 0.65 0.85 V
Ic =50mA, la ::5mA 0.95 V
Output Capacitance Cob Vce=5V,le=0 4 pF
f=1MHz
Current Gain Bandwidth Product fr Ic=10mA; Vce=2OV 2&0 MHz
f=100MHz
Turn On Time ton Vcc =3V, Vee =0.5V 70 ns
Ic=10mA, la1 =1mA
Turn Off Time toll Vcc=3V,lc=1mA 225 ns
le=le2=1mA
" Puls.e Test: Pulse Width s 300/lS, Duty Cycle s 2%

2N3904 NPN' EPITAXIAL SILICON TRANSISTOR

• Collector-Emitter Voltage: VCEO =40V TO-92

Characteristic Symbol Test Conditions Min 1\tp Max Unit
Collector-Base Breakdown Voltage BVceo Ic =10pA,IE=0 60 V

"Collector-Emitter Breakdown Voltage BVcEo Ic=1mA,le=0 40 V
Emitter-Base Breakdown Voltage BVEeo IE=10pA,lc =0 6 V
Collector Cut-off Current IcEx VeE =30V, VEe =';!II 50 nA
Base Cut-off Current leL VCE =30V, VES =3V 50 nA
"DC Current Gain hFE Ic=0.1mA, VcE =1V 40
le=1mA, VcE =1V 70
Ic =10mA, VCE=1V 100 300
Ic=50mA, VcE =1V 60
Ic=100mA, VCE=1V 30
"Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,le=1mA 0.2 V
Ic =50mA,le=5mA 0.3 V
"Base-Emitter Saturation Voltage VeE (sat) Ic=10mA,le=1mA 0.65 0.85 V
Ic=50mA,ls=5mA 0.95 V
Output Capacitance Cob Vce=5V; IE=O 4 pF
f=1MHz
Current Gain Bandwidth Product fr Ic =10mA, VCE =?OV 300 MHz
f=100MHz
Turn On Time ton Vee =';!II, VeE =OEN 70 ns
Ic =10mA,lsl =1mA
Turn Off Time toft Vec=3V,le=1mA 250 ns
leI =ls2 =1mA
• Pulse Test: Pulse Width:s 3001lS, Duty Cycle:s 2%


2<10
'-
I-- Veo- r
200
,;' ~ I-- - .,-
-Veo_IV
V" ,/
i\
/ ki-"
~ -. r--r-
o 10
0.1 0.3 CIS 1 3 6 10 30 50 100 0.1 0.3 0.5 1 3 5 10 30 50100
Ie (mA). CCLLECIOR CURRENT Ie (mA). COI.LECIOR CURRENT
BASE·EMmER SATURATION VOLTAGE OUTPUT CAPACITANCE
I
10
--- -+-
c--' --- 8 . !
I-- to-10iB -
-Vae( I'l
z 4r--+-+~~Hr--r-r+~+Br--1
--
, I· ~i'-...-+-+-+-+++ttt--+-+~~Hr--j
.VCE(Sai)
8
.......
2r-~~~~t-~4-~~t--4
-
G.01
0.1
,
Q3
i
o.s 1 3
ill 5 10 30 50 100 10 30 50 100
Ie (mA). CCLLECIOR CURRENT Yea M. COI.LECIOfl.BA8E VOLTAGE
,.c8 SA~$UNG SEMICONDUCTOR 431

2N3905 PNP EPITAXIAL SILICON TRANSISTOR

• Collector-Emitter Voltage: YCEo=4OV TO-92
,ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic Symbol, Rating Unit

• Refer to 2N3906 for graphs



·Collector-Emitter Breakdown Voltage BVcEO Ic =1mA, Ie =0 40 V
Emitter-Base'Breakdown Voltage BVeeo Ie =10pA, Ic =0 5 V
Base Cut-off Current leL Vce =3CN, Vee =3V 50 nA
Collector Cut-off Current ICEl< Vce =30V, Vee=3V 50 nA
·DC Current Gain hFe Ic=0.1mA, Vce=1V 30
Ic =1mA, Vce =1V 40
Ic=10mA, Vce=1V 50 150
Ic=50mA, Vce=1V 30
Ic=100mA, Vce=1V 15
·Collector-Emitter Saturation Voltage Vce (sat) Ic=10mA,le=1mA 0.25 V
·Base-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=1mA 0.65 0.85 V
Ic=50mA,le=5mA , 0.95 V
Current Gain Bandwidth Product h ' Ic=10mA, Vce=20V ' 200 MHz
f=100MHz
Output CapaCitance Cob Vca=5V,le=0 ,4.5 pF
f=100KHz
Turn On Time ton Vcc=3V, Vee =O.5V 70 ns
Ic=10mA,le1 =1mA
Turn Off Time toff Vcc=3V,lc=10mA 260 ns
Ie = le2 ='1mA
• Pulse Widths300/As. Duty Cycles2%
c8 SAMSVNG SEMICONDUCTOR - 432


• Collector-EmiUer Voltage: Vceo =4~ TO-92
ABSOLUTE MAXIMUM RATINGS (T. =25°C)

Collector Dissipation Pc 625 rrW
i. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T. = 25°C)
Characteristic Symbol Test Conditions Min TYP Max Unit
Collector-Base Breakdown Voltage BVceo Ic =:10pA, Ie =0 40 V

"Collector-Emitter Breakdown Voltage BVceo Ic=1mA,le=0 40 V
Emitter-Base Breakdown Voltage BVEBO le=10pA,lc=0 5 V
Base Cut-off Current leL Vce=3f1II, VBE=~ 50 nA
Collector Cut-off Current ICEx Vce=30V, VeE =3V 50 nA
"DC Current Gain hFE Ic=0.1mA, Vce=1V 60
Ic=1mA, V~E=1V 80
Ic=10mA, Vce=1V 100 300
Ic'=50mA, Vce=1V 60
Ic= 1oomA, Vce= 1V 30
"Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,le=1mA 0.25 V
"Base-Emitter Saturation Voltage VeE (sat) Ic=10mA,le=1mA 0.65 0.85 V
Current Gain Bandwidth Product h Ic=10mA, VcE =2rN 250 MHz
f=1ooMHz
Output Capacitance Cob Vce =5V,"le =0 4.5 pF
f=1ooKHz
Turn On Time ton Vcc=~, VBE =OJ5V 70 ns
Ic =10mA,le1 =1mA
Turn Off Time toll Vcc=~,lc=10mA 300 ns
le1 =le2=1mA
" Pulse Width s 3OOj.Is, Duty Cycle:s 20Al
2N3906- PNP EPITAXIAL SILICON TRANSISTOR

1000 1000
r-- V .2fN
V,
I
.
10
0., 0.3 o.s 1 3510, 3050100
_ Ie (mA). COLLECIOR CURRENT . Ie (mA). COLLECIOR CURReNT
BASE-EMmER SATURATION VOLTAGE OUTPUT CAPACITANCE
10
," ,
12 -.
3 r---.
1c .. 101a t-----'!.oc! I
I=1ooKHz
10
I
1 Vae(sat)
"-
i J"I"
1
S4 ~
ce(sat
>-+-r ....;;,,~
II o
0.1 o.a 0.5 3 5 10 30 50 100 1 10 20 30 50 100
Ie (mAl. COLLEcroR CURRENT Yeo (V). COLLECIOII-BASE VOLT_


TO-92
• Coliector-Emitter.Yoltage: VcEo =30V


Emitter-Base Voltage VEBO • 5 V
•
• Refer to 2N3904 for grapfls 1. Emitter 2. Base 3 Collector
Collector-Base Breakdown Voltage BVcso Ic =10pA, IE =0 40 V

·Collector-Emitter Breakdown Voltage BVceo Ic=1mA,ls=0 30 V
Emitter-Base Breakdown Voltage BVEso IE=10pA,lc=0 5 V
Collector Cut-off Current Icso Vcs=20V, le=O 50 nA.
Emitter Cut-off Current leso Vse=3V,lc=O 50 nA
·DC Current Gain hF£ Ic=2mA, Vce=1V 50 150
Ic =50mA, Vce=1V 25
·Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA,ls=5mA 0.3 V
·Bas~-Emitter Saturation Voltage Vse (sat) Ic =50mA, Is =5mA 0.95 V
Current Gain Bandwidth Product h Ic =10mA, Vce=20V 250 MHz
f=100MHz
Output Capacitance Cob Vcs=5V,le=0 4 pF
f=1MHz
Collector-Base Capacitance Ccb Vcs=5V,le=0 4 pF
f=100KHz
• Pulse Test: Pulse Width:s; 300fls, Duty Cycle:s; 2%

2N4124. NPN EPitAXIAL SILICON TRANSISTOR

• Collector·Emltter Voltage: Vceo =25V TO-92

Collector-Base Vaitage VCBO 30 V

· Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V •


Characteristic . Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic .. 1OpA,IE=0 30 V

·Collector-Emitter Breakdown Voltage BVcEO Ic=1mA,le=0 25 V
Emitter-Base Breakdown Voltage 5 ., V
BVEBO IE=10pA,lc"0 ,
Collector Cut-off Current IcBO Vce=20V,IE=0 50 nA
Emitter Cut-off Current lEBO VeE=~,lc=O 50 nA
-DC Current Gain hFE Ic=2mA, VcE =1V 120 360
Ic .. 50mA, VcE =1V 60
·Collector-Emitter Saturation Voltage Vee (sat) Ic=50mA,ls=5mA 0.3 V
·-Base-Emitter Saturation Voltage VeE (sat) Ic .. 50mA,ls=5mA 0.95 V
Current Gain Bandwidth Product fr Ic =10mA, VCE =2OV 300 MHz
f=100MHz
Output Capacitance Cob Vcs=5V,IE=0 4 pF
f=1MHz
Collector-Base Capacitance Ccb Vcs=5V,IE=0 4 pF
f .. 100KHz
• Pulse Test: Pulse Width :s 3OO/AS. Duty Cycle:s 2%

2N4125 .PNP EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCEO =30V T0-92


Collector-Base Voltage Veeo 30 V
I
I
·Collector-Emitter Breakdown Voltage I BVCEo le'=1mA;l e =0 30 V

I
COlleCtor-Base Breakdown Voltage BVeeo Ie =10~. IE =0 30 V
Emitter-Base Breakdown Voltage BVEeo IE =10~. Ie =0 4 V
Collector Cut-off Current leBo Vce =20V. IE =0 50 nA
Emitter Cut-off Current lEBO VeE ='311. Ie =0' 50 nA
·DC Current Gain hFE Ie =2mA. VeE =1V 50 150
1c;=50mA. VCE=1V 25
·Collector-Emitter Saturation Voltage Vce(sat) Ic =SOmA. Ie = SmA OA V
·Base-Emitter Saturation Voltage Vee (sat) Ie =50mA. Ie =5mA 0.95
Current Gain Bandwidth Product iT Ic=10mA. Vce=20V 200 MHz
f=100MHz
Collector Base Capacitance Cc'b Vce=5V.IE=0 f=1MHz 4.5 pF
Noise Figure NF le=100~. VCE=5V 5 . dB
RG=1KO
Noise Bandwidth=
10Hz to 15.7KHz
·Pulse Test: Pulse Width ::;;300fAS. Duty Cycle::;; 2%
ciS SAMSUNG S~MICONDUcroR 437

2N4126 P~P EPITAXIAL SILICON TRANSISTOR
• C.ollector Dissipation: Pc (max)=625mW .


• Flefer to 2N3906 for graphs


Characteristic Sym,bol ' Test Conditions Min lYP Max Unit
·Collector-Emitter Breakdown Voltage BVcEo Ic=1rnA,la=0 25 V

Collector-Base Breakdown Voltage ,. BVCBO Ic =10pA, Ie =0 25 V
Emitter-Base Breakdown Voltage BVeao Ie =10pA, Ie =0 4 V
Collector Cut-off Current ICBO Vea=20V,le=0 50 nA
Emitter Cut-off,Current leBO Vae=3V,lc=0 50 nA
·DC Current Gain hFE Ic=2mA, Vce=1V 120 360
Ic .. 50mA, Vce=1V 60
·Collector-Emitter Saturation Voltage Vcdsat) Ic .. 50mA, la =5mA 0.4 V
·Base-Emitter Saturation Voltage Vae (sat) Ic=50mA,la=5mA 0.95
Current Gain Bandwidth Product h Ic =10mA;Vce=20V 250 MHz
f=100MHz
Collector ease Capacitance Ccb Vca=5V,le=0 4.5 pF
f=1MHz
Noise Figure NF Ic =100pA, Vce=5V 4 dB
Rg -=1KO
Noise Bandwidth=
10Hz to 15.7KHz
Pulse Test: Pulse Wid~300f.lS, Duty Cycl~2%
438

• Collector-Emitter Voltage: V CEO =40V TO-92
• ColleCtor Dissipation: Pc (max)=625mW

Collector-Emitter Voltage Vcm 40 V
I
Collector-Base Breakdown Voltage BVcBO Ic =100pA, IE =0 60 V

*Collector-Emitter Breakdown Voltage BVcm Ic=1mA,la=0 40 V
Emitter-Sase Breakdown Voltage BVEBO IE=100pA,lc =0 6 V
Collector Cut-off Current 'eEX VeE =35V, VEa =0.4V 100 nA
*DC Current Gain hFE Ic=1mA, Vce=1V 20
le=10mA, Vce=1V 40
le=150mA, Vee=1V 50 150
le=500mA, VeE=2V 20
*Coilector-Emitter Saturation Voltage Vce (sat) le=150mA,la=15mA 0.4 . V
le=500mA,la=50mA 0.75 V
*Base-Emitter Saturation Voltage Vae (sat) Ic=150mA,la=15mA 0.75 0.95 V
Ic=500mA,la=50mA 1.2 V
Collector-Base Capacitance Ccb Vca=5V,le=0 6.5 pF
f=100KHz
Current Gain Bandwidth Product h Ic =20mA, VCE =10V 200 MHz
f=100MHz
Turn On Time ton Vee =3OV, V~a =2V 35 ns
le=150mA,lal =15mA
Turn Off Time totl W.e =3Ov, Ic =150mA 255 ns
lal =la2 =15mA
* Pulse Test: Pulse Width~300I'S, Duty Cycles2%
c8 ,SAMSUNG SEMICONDUCTOR 439

2N4400 . ,NPN EPITAXIAL SILICON TRANSISTOR
DC CU~RENT GAIN CURRENT GAltwlANDWIDTH PRODUCI'

1000
"'" \.vco.,w
~~ "'tJ,W
<-
~ -.;;;::: :::,';"'i"
Vee
10
3 5 10 30 50
I
100
II
'300 500 1000
10
:1 5 10 30 50 100 3001600 1000
Ie (.....1. COLLECTOiI CURRENT Ie (.....1. COLLI!c:IOR CURRENT

COLLECTOR-EMmER SATURATION VOLTAGE COLLECTOfI-BASE CAPACITANCE
BASE-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE
10
r- 1e.1010
1 VBE(1at)
"""I
~ ::;:",.Cob .1 H
COb 1.1 z
1
Vee (eat)
I 1
3 5 10 30 50 100 3OO~ 1000 1 3 5 10 30 50 100 ,300
Ie (mAl. COI.LEC1'OR CURRENT
, c8 SAMSUNG S~~ICONDUCTOR 440


• Collector-Emitter Voltage: VCEo=40V TO-92

•
• Refer to 2N4400 for graphs 1. Emitter 2 Base 3 Collector
Collector-Base Breakdown Voltage BVcBO Ic=100pA,le=0 60 V

"Collector-Emitter Breakdown Voltage BVcEO Ic=1mA,le=0 40 V
Emitter-Base Breakdown Voltage BVeBO le=100pA,lc =0 6 V
Collector Cut-off Current IcEX Vce =35V, Vee=0.4V 100 nA
"DC Current Gain hFe Ic=0.1mA, Vce=1V 20
Ic=1mA, VCe =1V 40
Ic=10mA, Vce=1V 60
Ic=150mA, VcE =1V 100 300
Ic =500mA, Vce=2V 40
"Collector-Emitter Saturation Voltage Vce (sat) Ic=150mA,le=1SmA 0.4 V
Ic =500mA, Ie =50mA 0.75 V
"Base-Emitter Saturation Voltage Vee (sat) Ic=150mA,le=15mA 0.75 0.95 V
Ic =500mA, Ie =50mA 1.2 V
Collector-Base Capacitace Ccb Vce=5V,le=0 6.5 pF
f=100KHz
Current,Gain Bandwidth Product h Ic=20mA, Vce=1OV 250 MHz
f=100MHz
Turn On Time ton Vcc=3OV, Vee=2V 35 ns
Ic =150mA, le1 =15mA
Turn Off Time toft Vcc=3OV. Ic=150mA 255 ns
le1 ",1B2 -15mA
" Pulse Test: Pulse Width :s 3001-15, Duty Cycle:s 2%

2N4402 ·PNP,·EPITAXI~L SILICON TRANSISTOR

• Collector-Emitter Voltage: Vceo=4OV TO-92
• Collector Dissipation: Pc (max)=625mW'
Collector-Base Voltage VC9/l 40 V

Emitter-Base Voltage VEao 5 .V
Collector Current Ic' 600 mA

Collector-Base BreakdQWn Voltage BVC9/l Ic",,0.1mA.IE-0 40 V

·Collector-Emitter Breakdown Voitage BVcEO Ic=1mA.IB=0 40 V
Emitter-Base Breakdowr. Voltage BVEBO IE-0.1mA.lc=0 5 V
Collector Cut-off Current ICEX VcE =35V. VaE=0.4V 100 nA
Base Cut-off Current laEY VcE =35V, VaE=0.4V 100 nA
DC Current Gain hFE Ic=1mA. VcE =1V 30
Ic=10mA. Vce=1V 50
"lc=150mA. VcE =2V . 50 150
"lc=.500mA. VCE.='ZV 20
"Collector-Emitter Saturation Voltage VCE (sat) Ic=150mA.la=15mA 0.4 V
Ic=500mA.la=5OmA 0.75 V
*Base-El)1itter Saturation Voltage VaE (sat) Ic=150rM.la-15mA 0.75 . 0.95 V
Ic=500mA.IB=5OmA 1.3 V
Current Gain Bandwidth Product fr Ic=20mA. VcE =1OV 150 MHz
f=tOOMHz
Collector-Base Capacitance Ccb Vca -1OV.IE=0 8.5 pF
f .. 14OKHz
Turn. On Time ton Vcc·-3OV.lc =150mA 35 ns
lal =15mA. Va£=2.OV
Turn Off Time toff Vcc=3OV.lc=15OmA 255 ns
IB1 =1B2~15mA
• Pulse Test: Pulse Width:s 300,..s, Duty Cycle:s 2%
c8 SAMSUN~ SEMICOND':'CTOR 442


• Collector-Emitter Voltage: V CEO =40V TO-92
ABSOLUTE MAXIMUI\II RATINGS (Ta =25°C)

I
Collector-Base Breakdown Voltage BVcao Ic=O.lmA,IE=O 40 V

'Collector-Emitter Breakdown Voltage BVcEO . le=lmA,la=O 40 V
Emitter-Base BreakdOwn Voltage BVEBO IE=O.lmA,le=O 5 V
Collector Cut-off Current ICEX VcE =35V, VaE =0.4V 100 nA
Base Cut-off Current laEv VCE =35V, VaE =0.4V 100 nA
DC Current Gain hFE Ie =0.1 rnA, VCE=1V 30
Ie =lmA, VCE =lV .60
Ie =10mA, VCE =1V 100
'le=150mA, VCE=2V 100 300
, Ie =500mA, VeE =2V 20
'Collector-Emitter Saturation Voltage VCE (sat) Ie =150mA, la =15mA 0.4 V
le=500mA,la=50mA 0.75 V
'Base-Emitter Saturation Voltage VaE (sat) Ie =150mA, la =15mA 0.75 0.95 V
Ie =500mA, la =50mA 1.3 V
Current Gain Bandwidth Product h I~ =20mA, VCE =10V 200 MHz
Collector-Base Capacitance Ccb

- f=100MHz
Vca =10V,IE=0 8.5 pF
f=l40KHz
Turn On Time ton Vcc=3OV,lc=150mA 35 ns
la1 =15mA, VaE =2.OV
Turn Off Time toff Vec=3OV,lc=150mA 255 ns
la1 =1B2=15mA
, Pulse Test: Pulse Width ~ 300'",5, Duty Cycle ~ 2%

2N4403, PNP EPITAXIAL SI~ICON TRANSISTOR
DC CURRENT GAIN BASE-EMITTER ON VOLTAGE

1000 200
500 J
300I
r- Vee_ 100 VeE- fN
a 100
I--
r-....
1
i!
50
30
0
II
110
1, 1
3 5, 10 30 50 100 300 500 1000 0.2 D.4 0.6 1.0 1,2
Ie (mAl. COLLECTOR CURRENT V.. M.IlASE-EMITTER VOLTAGE

, BASE-EMITTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT COLLECTOR-EMITTER SATURATION VOLTAGE
1000 10
I-- VCi-1OV - I-- Ie "",101e
~,
~ 1'. BE(satl'
50
30
10
Vce(aat)
V
5
3
I. 0.01
3510 3050 100 300 500 1000 , 1 3 5 10 30 50 100 300 500
Ie (mAl. COLLECTOR CURRENT , Ie (mA). COLLECI'OR CURRENT
COLLECTOR-BASE CAPACITANCE
100 ,
r--!-I4OKH
1----.,-"'.0
30
r-- t- '
......
1
3510 3050100
Vea M. COLLECI'OR-IIASE VOLTAGE' .

• Collector-Emitter Voltage: Vceo=5OV TO-92
ABSOLUTE MAXIMUM RATINGS (Ta ::::25°C)
CharacteriStic Symbol Rating Unit

Junction Temperature TJ 150 °C
I
Charactarlstlc Symbol Test Conditions Min lYP Max Unit
Collector-Base Breakdown Voltage BVcBO Ic=100pA,IE=0 50 V

I· Collector-Emitter Breakdown Voltage BVcEO Ic=1mA,la=0 50 V
Collector Cut-off Current Icao Vca =lOV,IE=O 10 nA
Vca=35V,IE=O 50 nA
Emitter Cut-off Current lEBO VaE =31/, Ic =0 50 nA
DC Current Gain hFE Ic =100pA, VCE ';'5V 150 500
Ic =1mA, VCE =5V 150
·lc =10mA, VCE=5V 150
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,la=lmA 0.3 V
. Base-Emitter On Voltage VaE(on) Ic =lmA, VCE =5V 0.85 V
Current Gain Bandwidth Product h Ic =500pA, VCE =5V 40 MHz
f=20MHz
Collector-Base Capacitance Ccb Vca =5V,IE=0 4 pF
f=100KHz
Noise Figure NF Ic =20pA, Vee =5V 3 dB
Rs=10KO
f=10Hz to 15.7KHz
Ic =100pA, Vee =5V 3 dB
Rs =3KO, f .. 1KHz
• Puls.e Test: Pulse Width s 300j.lS, Duty Cycle S 2%

PNPEPITAXIAL SILICON .TRANSISTOR

1000 100
500 50
300
I-- VCE_5
2N 087
I-- r- Vce =5
30
I
~ :m 1
is
jll00
!ii 2N 086 1 ,0
ii
8
50
30 ,~ :
!l ~ 1
i 10 :t 1
S
Jlo.s
D.3
0.1
0.1 D.3 o.s 3 6 10 30 50 100 0.2 0.. 0.6 0.6 1.0 1.2
Ie (mA). COLLECTOR CURRENT vie (V). BASE-EMITTER VOLTAGE .

CURRENT GAIN BANDWIDTH PRODUCT COLLECTOR·EMITTER SATURATION VOLTAGE
1000 10
0 ~ 5
le"'~IB
t-- VCE_5V !:j t--
i 3
.~
I---"'" Ii!!i 1
I::::::::'::
11
VB. (sat)
~o.s
~ 03
!~
0 >:. 0.1
5 !lo.os ~ VeE (Sal)
>
3 0.03
1 0.01
0.1 D.3 0.5 3 5 10 30 50 100 0.1 D.3 o.s 3 5 10 30 50 100
Ie (rnA), COLLECI'OR CURRENT Ie (rnA), COLLeCTOR CURReNT
COLLECTOR·BASE CAPACITANCE
12 !
f-LJK~z 1---
I~-O
10
r--....
r-...
i'
r--
0
10 30 50 100
VeB (V). COLLECTOR-BASE VOLTAGE

AMP~IFIER TRANSISTOR
• Collector-Emitter Vo'ltage: Vceo =50V TO-92
Collector-Base Voltage V~BO 50 V

. Collector-Emitter Voltage VCEO 50 V
Collector Dissipation Pc &25 mW
•
" Refer to 2N5086 for graphs
Characteristic Symbol Test Conditions Min Typ Max Unit·
Collector-Base Breakdown Voltage BVcaO Ic=100pA,le=0 50 V

"Collector-Emitter Breakdown Voltage BVceo Ic=1mA,le=0 50 V
Collector Cut-off Current ICBO Vce=1OV,le=0 10 nA
Vce=35V, le;"O 50 nA
Emitter Cut-off Current leBO Vee =3V,lc ':"O 50 nA
DC Current Gain hFe Ie =100pA, Vce =5V .250 800
Ic=1mA, Vce=5V 250
"lc=10mA, Vce=5V 250
Collector-Emitter Saturation Voltage Vce (sat) Ic=10mA,le=1mA 0.3 V
Base-Emitter On Voltage Vee (on) le=1mA, Vce=5V 0.85 V
Current Gain Bandwidth Product h Ic=500pA, Vce=5V 40 MHz
f=20MHz
Collector-Base CapaCitance Ccb Vcs=5V,le=0 4 pF
f=100KHz
Noise Figure NF Ic =20pA, Vce =5V 2 dB
Rs=10KO
. f=10Hz to 15.7KHz
Ic =100pA, Vce=5V 2 dB
Rs =3KO, f=1KHz
• Pulse Test: Pulse Width:::; 300IlS, Duty Cycle:::; 2%
447
2N5088 NPN EPITAXIAL SIL_ICON TRANSISTOR'
TO-92
• Collector-Emitter VOltage: Vceo=3OV
• Collector Dissipation: Pc (m~x)=625mW

Emitter-Base Voltage VeBO 4.5 V
'Collector-Base Breakdown Voltage BVCBO Ic =1OOpA, IE =0 35 V

'Collector-Emitter Breakdown Voltage BVceo Ic=1mA, Ie =0· 30 V
Collector Cut-off Current lceo Vce=2OV,·le=O 50 nA
Emitter Cut-off Current leBO VBe=~,lc=O 50 nA
VBe =4.sV, 16 =0 100 nA
DC Current Gain hFE Ic =100pA, Vce=5V 300 900
Ic =1mA, Vce =5V 350
'lc=10mA, Vce=5V 300
Collector-Emitter Saturation Voltage Vce (sat) Ic=10mA,le=1mA 0.5 V
'Base-Emitter On Voltage Vedon) . Ic=10mA, Vce=5V 0.8 V
Current Gain Bandwidth Product fr Ic =500pA, Vce =5V 50 MHz
f=20MHz
Collector Base Capacitance Ccb VCB =5V.le =0 4 'pF
f=100KHz
Noise Figure NF Ie =100pA, Vce =5V 3 dB
Rs =10KO
f=10Hz to 15.7KHz
, Pulse Test: Pulse Width ~ 300jAS, Duty Cycle ~ 2%

12NS088 NPN EPITAXIAL SILICON TRANSISTOR

1000
500
300 -VCE_5V
2N5209
1
0.1 D.3 o.s 3 5 10 30 50 100 0.1 0.3 0.5 3 5 10 30 50 100
Ie (mAl, COLLECIOR CURRENT Ie (mAl, COLLECIOR CURRENT
•
COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR-BASE CAPACITANCE
10
6
II
f-- f-1o.'010 r-- ce~ll~~
IIE,-q. I
5r-- eorr:!~HZ
,
.1"- 1'..
f-- V.. (satl
"- I ......
1 .........
r---- Cob
I I
f-- Vee (satl 1 1 - F1'

II
0.,
II 1111 11
D.3 3 10 30 100 10 30 50 100 200
Ie (mAl, COLLECTOR CURRENT Yes (V), COU~ECTOR BASE VOLTAGE
449
2N5088. NPN EPITAXIAL SILICON TRANSISTOR'
:--
300~ 2N5209
f-- f-vcE_5V
1
0.1 0.3 0.5 3 5 10 30 50 100 0.1 0.3 o.s 3 5 10 30 50 100
NOISE FIGURE
0
VCE-5V
f_10Hz
_%,l ~ ~~'ti ~~'\.

'"":~
1
\\
"'r--. r-.... \
'-""""
0.01 I'....
0.1 Q.3 0.5 3 5 10 30 50 100

AMPLIFIER .TRANSISTOR r--------'------.

• Collector-Emitter Voltage: VcEo =25V TO-92
, Characteristic Symbol Rating Unit

Collector-Emitter Voltage VeEo 2S V
Emitter-Base Voltage VEeo 4.S V
Collector Current Ie SO mA
Junction Temperature Tj lS0 °C
Storage Temperature Tstg -SS-150 °C'
•
• Refer to 2NS088 for graphs
Collector-Base Breakdown Voltage SVeeo Ie =100pA, IE =0 30 V

·Collector-Emitter Breakdown Voltage 1:lVeEo Ie =lmA, Ie =0 25 V
Collector Cut-off Current le~o Vee =15V, iE=O 50 nA
Emitter Cut-off Current lEe, VeE =3V,le =0 50 nA
VeE =4,SV,le=0 100 nA
DC Current Gain hFE \ le=100pA, VeE=5V 400 1200
,. le=lmA, VCE=SV 450
·le =10mA, VeE =5V 400
Cqllector-Emitter Saturation Voltage Vee(sat) Ie =10mA, Ie =lmA ·O.S V
'Base-Emitter On Voltage VeE (on)', Ic=10mA, VeE=SV 0.8 V
Cu'rrent Gain Bandwidth Product . fr , le=SOOpA, VeE=SV SO MHz
f=20MHz
Collector Base CapaCitance Ccb Vee=SV, iE=O 4 pF
f=100KHz
Noise Figure NF le=l00pA, VeE=SV 2 dB
'f s =10KIl.
flOHz to lS.7KHz
.
• Pulse Test: Pulse Width ::;;300jAs, Duty Cycle::;; 2%
...
cR SAMSUNG SEMICONDUCTOR 451
2N5209. NPN EPITAXIAL·SILICON TRANSISTOR
• Collector-Eml"er Voltage: VCEO =50V TO-92
I\'" .
.Characteristic Symbol Rating Unit
Collector-Bas", Voltage Vceo 50 V

Collector-Emitter Voltage Vcro 50 V
Emitter-Base Voltage VEBO 4.5 V
Collector Drssipation Pc ·625 mW
Junction Temperature Tj 150 °c
Storage Temperature Tstg -55-150 °c
• Refer to 2NS088 for graphs
.Characteristic Symbol Test Conditions Min ~p Max Unit
Collector-Base Breakdown Voltage BVceo Ic =100pA,IE=0 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=lmA,le=O 50 V
Collector Cut-ofi Current ICBO Vce =3SV, IE =·0 50 nA
Emitter Cut-ofi Current lEBO VeE ='$\/, Ic=O 50 nA
DC Current Gain hFE Ic =100pA, VCE =SV 100 300
Ic=lmA, VCE=SV 150
*lc=10mA, VCE':'SV 150
Collector-Emitter Saturation Voltage VCE (sat) Ic =10mA, Ie =lmA 0.7 V
Base-Emitter On Voltage VeE (on) Ic=lmA, VCE=SV 0.85 V
Current Gain Bandwidth Product h Ic =500pA, VCE=SV 30 MHz
f=20MHz
Collecior Base Capacitance Ccb Vce=SV,le=O 4 pF
f=100KHz
Noise Figure NF Ic =20pA' VCE =SV 3 dB
Rs=22KO
f=10Hz to lS.7KHz
Ic =20pA, VCE=SV 4 dB
Rs =10KIl, f=lKHz
• Pulse Test: Pulse Widths; 3001'5. Duty Cycle S; 2 0k
·452
• Collector-Emitter Voltage: VcEo=50V TO-92
ABSOLUTE MAXIMUM RATINGS (Ta = 25°Cj

Storage Temperature Tstg -55-150 'oC
•
" Refer to 2N5088 for graphs
Characteristic Symbol Test Conditions Min . lYP Max Unit
Collector-Base Breakdown Voltage BVcso Ic =100,.A, IE =0 50 V

"Collector-Emitter Breakdown Voltage BVcEo Ic=lmA,ls=O 50 V
. Collector Cut-off Current Icso Vcs =35V,IE=0 50 nA
Emitter Cut-off Current IESO V sE ,,!,3V,l c =O 50 nA
DC Current Gain hFE Ic =100,.A, VcE =5V 200 600
Ic=1mA, VcE =5V 250
"lc=10mA, VcE =5V 250
Collector-Emitter Saturation Voltage Vce(sat) Ic =10mA, Is =1mA 0.7 V
. Base-Emitter On Voltage VSE (on)' Ic=1mA, VcE =5V 0.85 V
Current Gain Bandwidth Product h Ic =500,.A, VCE =5V 30 MHz
f=20MHz
Collector Base Capacitance Ccb Vcs =5V,IE=0 4 pF
f=100KHz
Noise Figure NF Ic =20,.A, VCE =5V 2 dB
Hs=22Kll
t;=10Hz to 15.7KHz
Id=20,.A, VcE =5V 3 dB
Rs .. 10KO, f=1KHz
"Pulse Test: Pulse Width::; 300jJS, Duty Cycle::; 2%

~ Collector-sase Voltage: VcEo=120V TO-92


Collector-Emitter Voltage - VCEO 120 V

ELECTRI~L CHARACTERISTICS =
(Ta 25°C)
. Characteristic Symbol. Test Condition Min lYP Max Unit
Collector-Base Breakdown Voltage BVcBO .Ic =100pA. IE =0 130 V

Collector-Emitter Breakdown Voltage BVcEo Ic=lmA.la=O 120 V
Emitter-Base Breakdown Voltage BVEao IE=10pA.lc=0 5 V
Collector Cut-off Current Icao Vca=10OV.IE=0 100 nA
Emitter Cut-off Current IEao VEa =3V. Ic =0 50 nA
·DC Ourrent Gain hFE Ic =lmA. VCE =5V 30
Ic=10mA. VCE=5V 40 180 ,
Ic =50mA. VeE =5V 40
"Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA.la=lmA 0.2 V
Ic =50mA. la =5mA 0.5 V
"Base-Emitter Saturation Voltage Vadsat) Ic=10mA.la=lmA .' 1 V
Ic =50mA. la =smA 1 V
Current Gain Bandwidth Product fr Ic=10mA. VCE=10V 100 400 MHz
f=100MHz
Output Capacitance Cob Vca=10V.IE=0 6 pF
f=IMHz
Noise FigurE' NF Ic=250pA. VCE=5V 8 dB
Rs=IKO
f=10Hz to 15.7KHz
• Pulse Test: Pulse Width~300!iS. Duty Cycle~2%
454
2N5401. PNP EPITAXIAL SILICON TRANSISTOR
• Collector~Emltter Voltage: VCE.O =15OV TO-92
Collector-Base Voltage VCBo 160 V

COllector-Emitter Voltage VCEo 1?0 V
Emitter-Base Voltage' VeBO 5 V
1 EmItter 2. Base 3. Collector
Collector-Base Breakdown Voltage BVCBO Ic=100~,le=0 160 V

"Collector-Emitter Breakdown Voltage· BVceo Ic=1mA,IB=0 150 V
Emitter-Base Breakdown Voltage BVeBO le·=10pA,lc=0 5 V
Collector Cut-off Current ICBO Vca = 12OV, Ie =0 50 nA
Emitter Cut-off Current 1 leBO VeB=3V,lc =0 50 nA
"DC Current Gain hFe Ic=1mA, Vce=5V 50
Ic=10mA, Vce=5V ,60 240
Ic=50mA, Vce=5V 50
"Collector-Emitter Saturation Voltage Vce (sat) Ic=10mA,IB=1mA 0.2 V
Ic =50mA, IB =5mA 0.5 V
"Base-Emitter Saturation Voltage. VBe (sat) Ic =10mA,IB=1mA 1 V
Ic =50mA,IB=5mA 1 V
Current Gain Bandwidth Product h \ Ic =10mA, Vce=10V 100 300 MHz
, f=100MHz
Output Capacitance Cob VcB =10V,le=0 6 pF
f=1MHz
Noise Figure NF 'lc=250~, Vce=5V 8 dB
'Rs =1KIl
f=10Hz to 15.7KHz
" Pulse Test: Pulse Widths300j./s, Duty Cycles2%

455
DC CURRENT GAIN BAsE-EMITTER ON VOLTAGE
1000 1DOC
500
500 I-- I-Vce_5V
300 - -Vee.5V
300
J
~
"
to;
w 100
II:
B
!i 50
i 30
10
3 5 10 30 50 10f) 300 500 1000 0.2 0.4 0.6 0.8 1.0 1.2
Ie (mA), COLLECTOR CURRENT VeE (V). IlASE-eMITTER VOI.TAGE
CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER-sATURATION VOLTAGE
1000 10
r-- r-Vce-1OV I-- -1e·101.
!'-,.
1== Jl(aal)
r-
/'
1== Vee (sal)
0D1
3 5 10 30 50 100 300 500 1000 3 5 10 30 50 100 300 500 1000
Ie (mA). COLLECTOR CURRENT Ie (mA). COLLECTOR CURRENT
o.UTPUT CAPACITANCE
214
- ,.JM.J.
IE-=O
20
r\.
'\
1"'-
"-
. "'-... .......
10 30 50 100
Vea (V). COLLECTOR BASE VOI.TAGE

• Coliector·Emitter Voltage: VCI!O =140V TO·92
Collector·Base Voltage Vcso 160 V

Colle~o(·Emitter Voltage VCEO 140 V
Emitter·Base Voltage VE80 6 V
Collector Cu rrent Ic 600 mA

Characteristic Symbol Test Conditions Min Typ Max Unit'
Coliector·Base Breakdown Voltage BVcso Ic =100pA,IE=0 160 V

-Coliector·Emitter Saturation Voltage BVcEo le=1mA,ls=0 140 V
Emitter·Base Breakdown Voltage BVEso IE =10pA, Ic =0 6 V
Collector Cut·off Current leso Vcs =100V,IE=0 100 nA
Emitter Cut·off Current IEso VSE =4V, Ie =0 50 nA
-DC Current Gain hFE le=1mA, VCE=5V 60
Ic=10mA, VeE =5V 60 250
Ic=50mA, VcE =5V 20
- Coliector·Emitter Saturation Voltage VeE (sat) le=10mA,ls=1mA 0.15 V
Ie =50mA, Is =5mA 0.25 V
-Base-Emitter Saturation Voltage VSE (sat) le=10mA,ls=1mA 1 V
Ie =50mA, Is =5mA 1.2 V
Current Gain Bandwidth Product h Ic =10mA, VCE=1OV 100 300 MHz
f=100MHz
Output Capacitance Cob Vcs =10V,IE=0 6 pF
f=1MHz
Noise Figure NF Ie = 250pA, VCE=5V 10 dB
Rs=1KO
f=10Hz to 15.7KHz
- Pulse. Test: Pulse Width$3QO/ols, Duty Cycle:s2%

• Collector-Emitter Voltage: V CEO =16"" ' TO-92
• Collector Dissipation: Pc!max)=625mW
COlleCtor-Base VoI~ge Veeo 180 V

Collector-Emi,tter, Voltage Veeo 160 V
Emitter-Base Voltage Veeo 6 V.
Col,lector Current Ie 600 mA
1, Emitter 2. Sase 3. Collecfor
, Characteristic Symbol Test Conditions Min Typ -Max Unit
Collector-Base Breakdown Voltage BVceo Ic =100pA, Ie =0 . 180 V

·Collector-Emitter Breakdown Voltage BVcEO Ic=lmA,'le=O 160 V
Emitter-Base Breakdown Voltage BVeeo Ie =10pA, Ic =0 6 V
Collector Cut-off Current Iceo Vce = 120V, Ie =0 50 nA
Emitter Cut-off Current leeo Vee =4V, Ic =0 50 nA
·DC Current Gain hFe Ic=lmA, Vce=5V 80
. Ic=10mA, Vce=5V
' Ie ,;,50mA, Vce =5V
80
30
250
·Collector-Emitter Saturation Voltage Vce (sat) le=10mA,le=lmA 0.15 V

Ic =50mA, Ie =5mA 0.2 V
·Base-Emitter Saturation Voltage Vee (sat) Ie =10mA, Ie =lmA 1 V
Ie =50mA, Ie =5mA 1 V
Current Gain Bandwidth Proouct fr Ic =10mA, Vce =10V 100 300 MHz
f=I00MHz
Output CapaCitance Cob Vee=10V"le=0 6 pF
f=IMHz
NOise Figure NF' Ie =250pA, Vee =5V 8 dB
Rs=IKO
f=10Hz to 15.7KHz
~Pulse Test: Pulse Widths300I'S, Duty Cycles2%
458
,DC CURRENT GAIN BASE-EMITTER ON VOLTAGE

1~ 1~
f--- VCE=5V 500 r-- t-Vce-5V

300 300
I
i!!
<§ 100 .........
I
H 30
i 10 I
I I
3 5 10 30 50 100 300 1000 0.2 a4 0.6 OB 1.0 1.2

Ie (mA), COLLECTOR CURRENT V.. M. BASE-EMlnER VOLTAGE
•
':. CURRENT GAIN-BANDWIDTH PRODUCT COLLECTOR-EMITTER SATURATION VOLTAGE
1000 10
- VCE-1OV
f-- Ic=101s
~
t"-.
'F=: J1L,)
fit V
e.(oBI)
f--
om
3 5 10 30 50 100 300 500 1000 3 5 10 30 50 100 300 500 1000
Ie (mA). COLLECTOR CURRENT Ie (mA). COLLECIOR CURRENT
OUTPUTCA~TANCE
-
12If---
10
- .. fob.
1• ..0
I\.
I "
r--....
r-. ...
oI
1 10 30 fOO
Vea M. COLLEC1OR _ VOL'WIE

2N6427 SILICON· DARLINGTON TRANSISTOR··
DARLINGTON TRANSISTOR
• Collector-EmiHerVoltage: Vceo =40V TO-92


Emitter-Base Voltage VeBo 12 V
Storage Temperature Tstg -55-150 °C·

Characteristic . Symbol . Test Conditions Min lYP Max Unit
'Collector-Emitter Breakdown Voltage

Collector-Base Breakdowl'l Voltage
Emitter-Base Breakdown yeltage
Collector Cut-off Current
BVceo
BVcBo
BVeBO
ICBO
Ic=10mA,IB=0
Ic=100pA,le=0
Ie =10pA, Ic =0
VcB =30V, le=O
40
40
12
.. 50
V
V
V
nA
Collector Cut-off Current ICEO Vce =25V,IB=0 .1 ",A
Emitter Cut-off Current leBO VBe =1OV, Ic =0 50 nA
'DC Current Gain .. hFe Ic=10mA, Vce=5V 10K 100K
Ic=100mA, Vce=5V 20K 200K
Ic =500mA, Vce =5V 14K 140K
Collector-Emitter Saturation Voltage Vce (sat) Ic=.50mA,IB=O.5mA 0.71 1.2 V
Ic =500mA, ·IB =0.5mA 0.9 1.5 V
Base-Emitter Saturation Voltage . VBe (sat) Ic=.500mA,IB=O.5mA 1.52 2 V
Base-Emitter On Voltage VBe(on) Ic=50mA, Vce=5V 1.24 1.75 V
. Output Capacitance Cob VCB=10V,le=0 5.4 7 pF
f=1MHz
Noise Figure NF Ic=1mA, Vce=5V 3 10 ·dB
Rs=100KO .
. f=10KHz to 15.7 KHz
'Pulse Test: Pulse Width:s 3001'8, Duty Cycle:s 2%
c8 SAMSUNG SEMIC~NDUCTOR .460

NPN EPITAXIAL
2N6427 SILICON DARLINGTON TRANSISTOR
1000~~m
1000K
500K
300K
I-- c-- Vce - 5V 15OO~_5V
I .. 300 f----j--+--+-t+1e+++---+--++-+'-l+++l
I I:
- S
/'; 1'00gmJ~m
I: I---t--t-+H+ttt----t---+-++-+++tl
3K (
~
lK 10 '-------'........J......LL..Ll--Ll..!._--L-.J....-LJ.---'--L.LJJ
3 5 10 30 50 100 300 500 1000 1 3 5 10 30 50 100
Ie (mA). COUEc:TOR CURRENT I. (....). CCl.LECI'OR CUIlIIENT
COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER ON VOLTAGE
10
1c-1000}B
200
100
=F=L.L II
1
VBE(aa1)
VeE(,",)
-- ~
f--
I
, 1
I
f- 0 r- -
0.1 I
10 30 50 100 300 o 0.2 D.6 1.0 1A 1.8 2.2 2.6
Ie (mA). CCl.LECI'OR CURRENT ""E (V). BASE·EMITTER VCLTAGE
461
2N6428 NPN EPh"AXIAL SILICON TRANSISTOR
• Collector-Emitter Voltage: VCEO =50V 10-92
Collector-Base Voltage VC80 60 V

Collector Current Ic 200 ' mA
Storage Temperature . Tstg' -55-150 °C

Collector-Base Breakdown Voltage BVC80 Ic =100pA, IE =0 60 V

Collector-Emitter Breakdown Voltage BVCEO Ic~1mA, le=O 50 V
Collector Cut-off Current Iceo Vce=30V,IE=O 10 nA
Collector Cut-off Current ICEo Vc~=30V, le=O 25 nA
Emitter Cut-off Current IEeo VeE =5V,lc=0 10 nA
DC Current,Gain hFE Ic =10pA, VcE =5V 250
Ic =100pA, VcE =5V 250 650
Ic=1mA, VcE =5V 250
Ic=10mA, Vce=5V 250
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA, 1s=0.5mA 0.2 V'
•
Base£mitter On Voltage VeE (on)
Ic=100mA,le=5mA
Ic=1mA, VcE =5V 0.56
0.6
0.66
V
V
Current Gain Bandwidth Product fr Ic=1mA, VcE =5V 100 700 MHz
f=100MHz
Output Capacitance Cob Vce =10V, IE =0 3 pF
f=1MHz
Noise Figure/Noise VOltage Level NF/Nv Ic =100pA, VcE =5V '
(1) Rs =10KO, BW=1Hz 3/18.1 dB/nV
f=100Hz
(2) Rs =.50KO, BW=15.7KHz 6/5.7 dB/p.V
f=10Hz-10KHz
(3) Rs =5000, BW=1Hz 3.514.3 dBlnV
f=10Hz
c8 SAMSUNG SEMICONDUCTOR, 462

2N6428A . NPN EPITAXIAL SILICON TRANSISTOR
• Collector-EmiU,r Voltage: VCEO =50V
I TO-92
.ABSOLUTE MAXIMUM RATINGS (Ta 25°C) =


••
1. 'EmItter 2. Base 3. Collector
Collector-Base Breakdown Voltage BVcBo Ic =100,A, IE =0 60 V

Collector-Emitter Breakdown Voltage BVcEo Ic=1mA,IB=0 50 V
Collector Cut-off Current ICBO VcB =30V,IE=0 10 nA
Collector Cut-off Current ICED VcE =30V,IB=0 25 nA
Emitter Cut-off Current lEBO VBE =5V,lc =0 10 nA
DC Current Gain hFE Ic =10,A, VCE =5V 250
Ic =100,A, VcE =5V 250 650
Ic=1mA, VcE =5V 250
Ic =10mA, VcE =5V 250
Collector-Emitter Saturation Voltage VCE (sat) Ic =10mA, IB =O.5mA 0.2 V
Ic =100mA,IB=5mA 0.6 V
Base-Emitter On Voltage VBE (on) Ic=1mA, VcE =5V 0.56 0.66 V
Current Gain Bandwidth Product h Ic=1mA, VcE =5V 100 700 MHi
f=100MHz
Output Capacitance Cob Vcs=1OV,IE=0 3 pF
f=1MHz
Noise Figure/Noise vOltage Level NF/Nv Ic =100,A, VcE =5V
(1) Rs":1OKO,. BW=1Hz 2/16.2 dB/nV
f=100Hz
(2) Rs =50KO, BW=15.7KHz 4/4.6 dBltN
f=10Hz-10KHz
(3) Rs =500, BW=1Hz 3/4.1 dB/nV
f=10Hz
463
HIGH VOLTAGE TRANSISTOR

• Collector-Emitter Voltage: VCEO = 250V TO-92
COllector-Base Voltage VCBO 250 V

Emitter-Base Voltage , VEeo 6 V
Collector Dissipation Pc 625 rrtN
1. Emitter 2. Sase 3. Collector

Characteristic Symbol ' Test Conditions Min Typ Max Unit
',Collector-Emitter Breakdown Voltage BVceO Ic=lmA,le=O 250 V

Collector-Base Breakdown Voltage BVCBO Ic =lOOpA, IE =0 250 V
Emitter-Base Breakdown Voltage BVEeo IE=10pA,lc=0 6 V
Collector Cut-off Current ICBO Vce=15OV,IE=0 50 nA
Emitter Cut-off Current lEBO VeE =5V, Ic ",,0 50 nA
'DC Current Gain hFE Ic=lmA, VcE =10V 35
Ic =10mA, VCE =10V 50
'lc=30mA, VCE=10V 50 300
le=50!1lA, VeE=10V 45 220
Ie =loomA, VCE =10V 25
Collector-Emitter Saturation Voltage VeE (sat) le=10mA,le=lmA 0.3 V
Ie =20mA, Ie =2mA 0.35 V
Ic =30mA,le=3mA 0.5 V
Ic =50mA,le=5mA' . ' 1 V
Base-Emitter Saturation Voltage VeE (sat) Ie =10mA, Ie =lmA 0.75 V
Ic =20mA, Ie =,2mA 0.85 V
Ic =30mA, Ie =3mA 0.9 V
Collector-Base Capacitance ,Ccb Vee =20V,IE=0 6 pF
f=lMHz
'Current Gain Bandwidth Product h Ic =10mA, VcE =20V 40 200 MHz
f=20MHz
Base Emitter On Voltage 'VBE (on) Ic =lOOmA, VCE =10V 2 V
• Pulse Test: Pulse Width ~ 3OO/lS, Duty Cycle ~ 2%

2N6515 NPN EPITAXIAL .SILICON TRANSISTOR

1000
- 1000
500 I---VCE-1011
f----Vce-2OII
300
I-------- 2N~1~N6S16
~.
~ 2N6S17
"
t---
1\
,
1
3510 30501(1) 1 10 30 50 100
Ie (mA), COt.I.EC1'OII CURRENT Ie (mA), CCIU.ECTOR CURRENT
COLLECTOR EMITTER SATURATION VOLTAGE
BASE EMITTER SATURATION VOLTAGE COLLECTOR-BASE CAPACITANCE
1.2
I ! 12
I
IE~O I I
f--- lel'lJIB f-- f_1MHz
10
L.---- +-
f - - f- VBE(sa1)
'" I"-
............
-
. 1 3
Ve<;(sa1)
I I
5 10
- j.--
30 SO 100 10 30 50 100 200

Ie (mAl, COUECIOfI CURRENT

'2N6516-", NPN -EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISOTR TO-92

• Collector-Emitter Voltage: VCEO =30OV
• Collector Dlsslpatioh: Pc (max)=625mW
ABSOLUTE MAXIMUM RATINGS (Ta ='25°C)

Junction Temperature TJ 150 "C
Storage Temperature: "
Tstg -55-:150 "C
• Refer to 2N6515 for graphs ' 1. Emitter 2. Sase 3. Collecfor

,:,.' ,
Characteristic Symbol Test ConC\itlons . Min lYP Max Unit
, Collector-Emitter Breakdown Voltage BVeeo Ic=1mA,18=0 300 V

Coliector·Base Breakdown Voltage BVcBO Ic .. 1oopA,IE=0 300 V
Emitter-Base Breakdown Voltage BVEBO IE=10pA,lc=0 6 V
Collector Cut-off Current ICBO Vce=200v,IE=0 50 nA
Emitter Cut-off Current lEBO VEe=5V,lc=0 50 nA
'DC Current Gain hFE Ic=1mA, VcE =1OV 30
Ic=10mA, VCE=1OV 45
Ic=30mA, VcE =1OV 45 270
Ic=50mA, VcE =1OV 40 200
Ic=1oomA, VcE =1OV 20
Collector-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=1mA 0.3 V
1c=20mA,le=2mA 0.35 V
Ic=50mA,le=5mA 1 V
Base-Emitter Saturation Voltage VeE (sat) Ic=10mA,le=1mA 0·75
. Ic=20mA, le=2mA 0.85
Ic =30mA, Ie =3mA 0.9
Collect-Base Capacitance Ccb Vca=2OV,I E=0 ' 6 pF
f=1MHz
'Current Gain Bandwidth Product h Ic=10mA, VcE =2OV 40 200 MHz
f=20MHz
Base Emitter On Voltage VeE (on) ,Ic =100mA, Vee =1OV 2 V
, Pulse Test: Pulse Width=:;;300/lS, Duty Cycle=:;; 2%
c8 SAMSUNG SEM,coND~croR 466

HIGH VOLTAGE TRANSISOTR

• COliecto....Emitter Voltage: VeE-O =35OV TO-92
ABSOLUTE MAXIMUM RATINGS (Ta ::=25°C)
Characteristic Symbol. Rating Unit

Emitter-Base Voltage Ve:O 6 V
•
Characteristic S'ymbol Test Conditions Min lYP Max Unit
• Collector-Emitter Breakdown Voltage BVcEO Ic=1mA,IB=0 350 V

Collector-Base Breakdown Voltage BVcBO Ic = 100pA, Ie =0 350 V
Emitter-Base Breakdown Voltage BVeBO Ie =10pA, Ic =0 6 V
Collector Cut-off Current ICBO VcB =25OV,le=0 50 nA
Emitter Cut-Off Current leBO VeB =5V,lc =0 50 nA
• DC Current Gain hFe· Ic=1mA, Vce=10V 20
le=10mA, Vce=1OV 30
Ie =30mA, Vce =1OV 30 200
le=50mA, Vce=1OV 20 200
le=100mA, Vce=10V 15
Collector-Emitter Saturation Voltage Vee (sat) le=10mA,IB=1mA 0.3 V
le=20mA,IB=2mA 0.35 V
Ie =30mA, IB =3mA 0.5 V
Ie =50mA, IB =5mA 1 V
Base-Emitter Saturation Voltage VBe (sat) Ic =10mA, 18 =1mA
Ie =20mA, Is =2mA
0.75
0.85
V
V I
Ic =30mA, IB =3mA 0.9 V
Collect-Base Capacitance Ccb Vcs=2OV,le=0 tl pF
f=1MHz
'Current Gain Bandwidth Product h· le=10mA, Vce=2OV 40 200 MHz
f=20MHz
Base Emitter On Voltage VBe (on) Ic=100mA, Vce=10V 2 V
• Pulse Test: Poise Width 5; 300Idl, Duty Cycle 5;2%
c8 SAMSUNG SEMICONDUcToR
467
2N8518 PHP EPITAXIAL. SILICON TRANSISTOR
HIGH 'VOLTAGE TRANSISTO.R

Collector-Emitter Voltage VCEo -250 V
Emitter-sase Voltage VEBO -5 V
.ColifilCtor Current Ic -500 mA
Base Current Ie "':250 mA
Derate.above 25°C 5 mW/oC
1. Emitter 2. Base 3. ·Collector

Characteristic . Symbol Test Condition Min Max Unit
Collector Base Breakdown Voltag BVceo Ic=-100jAA,IE=0 -250 V

• Collect.or Emitter Breakdown Voltage BVCEO Ic=-1mA,le=0 -250 V
Emitter Base Breakdown Voltage BVEBO IE=-10jAA,. Ic=O . -5 V
COllector Cutoff Current ICBO VCB= -150V, IE=O -50 nA
Emitter Cutoff Current lEBO VEB=-4V, Ic=.o -50 nA
• DC Current Gain hFE VcE =-10V,lc=-1mA 35
VcE =-tOV,lc=-10mA 50
VcE'=-10V,lc=-30mA .50, 300
VcE =-10V,lc=-50mA 45 220
VCE=-10V,lc=-100rriA 25
Collector-Emitter· Saturation Voltage VCE (sat) Ic =-10mA,IB=-1mA -0.30 V
: Ic=-20mA,IB=-;-2mA -0.35 V
Ic=-30Il)A, IB=-3mA -0.50 V
Ic=-50mA, IB=-5mA -1 V
Base-Emitter Saturation Voltage VBE (sat) Ic=-10mA, IB=-1mA -0.75 V
Ic=-20mA, IB=-2mA -0.85 V
;
Ic=-30mA, IB=-3mA :"'0.90 V
Base Emitter On Voltage VBE (on) VCE=-10V, Ic=-100mA -2 V
• Current Gain BandWidth Product fr VCE=-20V, Ic=-10mA, f=20MHz 40 200 MHz
Collector Base Capacitance Ccb VCB=-20V; IE=O, f"'1MHz 6 pF
Emitter Base CapaCitance Ceb VEB =-0.5V, Ic=O, f=1MHz
.
100 pF
Turn On Time ton VBE (off)=-2V, Vcc=-100V 200 ns

Ic=-50mA, IB1 =-10mA
Tum Off TIme toff Vcc=-100V, ic=-50mA 3.5 ns
IB1 =IB2=-10mA
• Pulse Test: PW~300/AS, Duty Cycle~2%


TO-92
· Collector-Base Volt!lge VCBO -300 V

Collector CUrrl;mt Ic -500 mA
Base Current Ie -250 mA
Derate above 25°C 5 mW/oC
• Refer to 2N6520 for graphs 1. Emitter 2. Base 3 Collector
Characteristic Symbol Test Condition Min Max Unit
Collector Base Breakdown Voltag BVCBO Ic= -1 OO,..A, IE=O --300 V

• Collector Emitter Breakdown Voltage . BVcEo Ic=-1mA, le=O -300 V
Emitter Base Breakdown Voltage BVEeo 1~=-1 O,..A, Ic=O -5 V
Collector Cutoff Current ICBO . Vce=-200V, IE=O -50 nA
Emitter Cutoff Current lEBO . VEe=-4V, Ic=O -50 nA
• DC Current Gain hFE VcE =-10V,lc=-1mA 30
VCE =-10V,lc=-10mA 45
VCE= -1 OV, Ic= -30mA 45 270
VCE =-10V,lc=-50mA 40 200
VCE=-lOV,lc=-100mA 20
Collector-Emitter Saturation Voltage VCE (sat) ic=-10mA,le=-1mA -0.30 V
Ic =-20mA, le=-2mA -0.35 V
Ic= -30mA, le= -3mA -0.50 V
Ic =-50mA, le=-5mA -1 V
Base-Emitter Saturation Voltage VeE (sat) Ic=-10mA,ls=-1mA -0.75 V
Ic=-20mA, le=-2mA -0.85 V
Ic= -30mA, Is= -3mA -0.90 V
Base Emitter On Voltage VeE (on) VCE=-10V,lc =-100mA -2 V
• Currel1t Gain Bandwidth Product· fr VcE =-20V, l c=-10mA, f=20MHz 40 200 MHz
Collector Base Capacitance Ccb Vce=-20V, IE=O, f=1MHz 6 pF
Emitter Base Capacitance Ceb VEB=-0.5V, Ic=O, f=1MHz 100 pF
Turn On Time ton VBE (Off)=-2V, Vcc =-100V 200 ns

Ic =-50mA,le1=-10mA
Turn Off Time toff Vcc=-100V,lc =-50mA 3.5 ns
le1=le2 =-10mA
• Pulse Test: PW~300,..s, Duty Cycle~2%

,
3N6520 PNP EPITAXIAL SILICON TRANSISTOR.

TO-92

Collector Current Ic -500 rnA
Base Current Ie -250 rnA
Collector Base Breakdown Voltag BVceo Ic=-100/lA, le=O -350 V

• Collector Emitter Breakdown Voltage BVoEo Ic=-lmA, le=O -350 V
Emitter sase Breakdown Voltage BVeBO le=-10/lA, 10=0 -5 V
Collector Cutoff Current lceo Vca=-250V, le=O -50 nA
Emitter Cutoff Current leBO Vea=-4V, 10=0 -50 nA
• DC Current Gain hFE Vce =-10V,lc=-lmA 20
Vce =-10V,lc =-10mA 30
Vce =-10V, le;=-30mA 30 200
Vee=-10V, 1c=-50mA. 20 200
Vce =-10V, le=-fOOmA 15
Collector-Emitter Saturation Voltage Vee (sat) 1c=-10mA,le=-lmA -0.30 V
le=-20mA,le=-2mA -0.35 y
Ic=-30mA, le=-3mA -0.50 V
Ic=-50mA, le=-5mA -1 V
Base-Emitter Saturation Voltage Vee (sat) Ic=-'-10mA,le=-lmA -0.75 V
Ic=-20mA,le=-2mA -0.85 V
Base Emitter On Voltage

le= -30mA, le= -3mA
Vce =-10V,le=-100mA
.. -0.90
-2
V
Vee (on) V
• Current Gain Bandwidth Product h Vce= -20V, le= -lOrnA, f=20MHz 40 200 MHz
Collector Base Capacitance Ceb Vee =-20V, le=O, f=lMHz 6 pF
Emitter Base Capacitance Ceb Vea=-0.5V,Ic=O, f=lMHz 100 pF
Tum On Time ton Vee (off)=-:2V, Vce =-100V 200 ns

Ic,=-50mA, le1 =-1 OmA·
Tum Off TIme toft V'cc=-100V,le=-50mA 3.5 ns
le1 =le2=-10mA
• Pulse Test: PW~3001A8, Duty CycleS2%
C8 SAMSUNG SEMICONDUCTOR 470

2N6520 PNP EPITAXIAL SILICON TRANSiSToR
BASE EMITTER SATURATION VOLTAGE

DC CURRENT GAIN COLLECTOR - EMITTER SATURATION VOLTAGE
'DO0
500
V -- 20V
-10000
-5000
lc-lO'IB
CE M/):
~
300
-2000
II
~ 100 -1000
I:
g --\
I
1
-500
-200
BE sat)
1.10 t -'DO
~ - 50
,
J - 20
-t -3 5 10 30 100 500 1A 5A-10A - 10 _1 _2 -5 -10 -20 -50 -100-200 -500-1A -2A -5A -lOA
IdmA~ COLLECTOR CURRENT lc:lmA~ COLLECTOR CURRENT
•
TURN-ON TIME TEMPERATURE COEFFICIENTS
, OK 3_0
700
500 td@VBE(O ) 2.0V V"" (o\.)~ I, bo~ ~ 2.5 L.U
~
~11s5_0
300 "- Tj=25°C
200
::.. Il;
0
()
'-5
25°C to 125°C
W '-0
~
II:
30
0
" ~
.
II:
w
IE
I!!
6- 0 .5
~-1 a
a: -1.5
0_5 RaVB tor VeE
-5r~'O
55°C to 2 5"C
12rt
Ravc for VeE (sat)
-20 I
'0
-1.0 -2.0 -3.0.-5.0 -10 -20
..
-30 -50-100
-2.5
-1.0 2.0 3.0 50 10 -20 -30 -50 -100
lc:lmM COLLECTOR CURRENT lc(mA), COLLECTOR CURRENT
TURN-OFF TIME CURRENT GAIN-BANDWIDTH PRODUCT

2_OK 1000
_~-20V
Is
1.0K
700
500 1---1--1I-'''''''++-I-+++H-_Vce (off)= -'OOV

'" 1cI1s=5_0
ia1=1B2 0
lj=2S'oC
300
w
IE
1= 200 0
! 100
70 1/
50 7'
~"L.0--~--2~_-0----~3~~-~5~.0~-~'O-----2~0~--~--3~0~-~5~O~_IlI,OO '0
-, -2 -5 -'0 '-20 -50 -80
IdmM COLLECTOR CURRENT lc:lmA~ COLLECTOR CURRENT
471
,t'" ,,' ~,,'
2H6520 . PNP ·EPITAXIAL SILICON. TRANSiSToR
C~PACITANCE
100
f-"f 1MHz
r-
c.
0
.........
" I' Cob
0
01 0.2 05 1 2 5 10 20 50 100
VcoIVI. COI.I..ECTOIHIA VOLTAGE
- ,-.'
472
BCW29 PNP EPITAXI~L SILICON TRANSISTOR

SOT-23

Storage Temperature Tstg 150 ·C
• Refer to MMBT5086 for graphs
•
Collector-Base Breakdown Voltage BVcBO Ic=10l-'A. IE=O 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=2.0mA, IB=O 20 V
Collector-Emitter Breakdown Voltage BVcEs Ic=lOOl-'A, YEB=O 30 V
Emitter-Base Breakdown Voltage BVEBO IE= lOl-'A,lc=O 5 .V
Collector Cutoff Current ICBO VcB =20V, IE=O 100 nA
DC Current Gain hFE VcE =5V, Ic=2.0mA 120 260
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,IB=0.5mA 0.3 V
Base-Emitter On Voltage VBE (on) Ic=2.0mA, VcE =5V 0.6 0.75 V
Output CapaCitance Cob VcB =·10V, IE=O 7 pF
f=lMHz
Noise Figure NF Ic=0.2mA, VCE=5V 10 dB
f=lKHz, Rs=2KO
Marking

BCW30 PNP, EPITAXIAL SILICON TRANSISTOR

SOT-23 '
ABSOLUTE MAxIMUM RATINGS (Ta :;:25°C). ,.,,'

Emitter-Base Voltage VeBO 5.0 V
Collector Dissipation Pc, 350 mW
Storage Temperature Tstg 150 DC
1. Base 2, Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (Ta =25°C),
Characteristic Sy'mbol Test Condition Min Max Unit
Collector-Base Breakdown Voltage BVcBO Ic= 1 O,..A, le=O 30 . V

Collector-Emitter Breakdown Voltage BVceo Ic=2.0mA, Is=O 20 V
Collector-Emitter Breakdown Voltage BVcES I~= 1 OO,..A, VeB=O 30 V
Emitter-Base Breakdown Voltage BVEBO Ie':" 1 O,..A, Ic=O 5 V
Collector Cutoff Current " IcBO VcB =20V, le=O 100 nA
DC Current Gain hFE VcE=5V, Ic=2.0mA 215 500
Coliector-EllJitter Saturation Voltage VCE (sat) Ic=10mA,ls=0.5mA 0.3 V
. Base-Emitter On Voltage VSE (on) Ic=2.0mA, Vce=5V 0.6 0.75 V
Output Capacitance COb, Vce =10V,IE=0 '7 pF
f=1MHz
Noise Figure NF Ic=0.2mA, VcE =5V 10 dB
f= 1 KHz, Rs=2KO
Marking

BCW31 NPN EPITAXIAL SILICON' TRANSISTOR

SOT-23
Collector-Base \(oltage VCBO 30 V

Storage. Temperature Tstg 150 °C
•
Collector-Base Breakdown Voltage BVcBO Ic= 1OIolA. 1.,=:0 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=2mA. la=O 20 V
Emitter-Base Breakdown Voltage BVEBO IE= 1OIolA,lc=0 5 V
Collector-Emitter Saturation Voltage VCE (sat) Ic= 1OmA, IB=0.5mA 0.25 V
Base-Emitter On Voltage VBE (on) Ic=2mA, VcE =5V 0.55 0.7 . V
Output Capacitance Cob VcB =10V,IE=0 4 pF
f=1.0MHz
Rs=2KO, f=1KHz
Marking
.c8 SAMSUNG SEMICONDUcr~R 475

BCW32 NPN EPITAXIAL SILICON TRANSISTOR

80T-23
ABSOLUTE MAXIMUM RATINGS (Ta =25°C),,·
Collector-Base Voltage VCBO , '30 V

Storage Temperature Tstg 150 °C
'" ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Collector-Base Breakdown Voltage BVCBO Ic=10,..A, IE=O 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=2mA, la=O 20 V
Emitter-Base Breakdown Voltage BVEBO IE= 1 O,..A, Ic=O 5 V
DC' Current Gain hFE VcE=5V, Ic=2.0mA 200 450
Collector-Emitter Saturation Voltage VCE (sat) Ic =10mA,la=0,5mA 0,25 V
Base-Emitter On Voltage VBE (on) le=2mA, VcE =5V .0.55 0.7 V
Output ~apacitance Cob Vca= 1 OV, IE=O 4 pF
f=1.0MHz
Noise Figure NF Ic =0,2mA, VeE =5V 10 dB
Rs=2KO, f=1KHz
Marking
.. ~
c8
\
SAMSUNG SEMICONDUCfOR 476
BCW33 NPN EPITAXIAL SIUCON TRANSISTOR
GENERAL. PURPOSE TRANSISTOR

50T-23

. Collector Dissipation Pc 350 mW
• Refer to MMBT 5088 for graphs
•
1. Base? 'Emitter 3. Collector
Characteristic Symbol Test Condition .Min Max Unit
Collector-Base Breakdown Voltage BVcBO Ic=10,..A.IE=0 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=2mA, IB=O 20 V
Emitter-Base Breakdown Voltage BVEBo IE=10lJA, Ic=O 5 V
Collector-Emitter Saturation Voltage VCE (sat) Ic= 1 OmA, IB=0.5mA 0.25 V
. Base-Emitter On Voltage VBE (on) Ic=2mA, VcE =5V 0.55 0.7 V
Output Capacitance Cob VcB =10V,IE=0 . 4 pF
f=1.0MHz
Rs=2KO, f=1KHz
Marking

BCW60A' NPN EPITAXIAL SILICON TRANSISTOR

.80T-23
.
Collector-Base Voltage VCBO 32 V'

1. Base 2. Emitter 3. Collector .
. ELECTRICAL CHARACTERISTICS (Ta =2S 0C)
Characteristic Symbol Test Condition Min Max

. Unit
Collector-Emitter Breakdown Voltage BVcEo Ic=2.0mA. IB=O 32 V

Emitter-Base BreakdOWn Voltage BVEBo IE=1.0I-'A. Ic=O 5 V
Collector Cutoff Current VcE=32V, VBE=O 20 nA
DC Current Gain hF'E VCE=5V. Ic=2.0mA 120 220
VCE=5V. Ic=50mA 60
Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA.IB=1.25mA 0.55 V
Ic= 1 OmA. IB=0.25mA 0.35 V
Base-Emitter Saturation Voltage VBE (sat) Ic=50mA. IA=1.25mA 0.7 1.05 V
Ic=50mA. IB=0.25mA 0.6 0.85 V
Base-Emitter On Voltage VBE (on) Vc.=5V. Ic=2.0mA 0.55 0.75 V
Current Gain-Bandwidth Product fr Ic=.1 OmA. VcE =5V 125 MHz
f=1 MHz
Output CapaCitance Cob VcB =10V.IE=0 4.5 pF
f=1.0MHz
Noise Figure NF Ic=0.2mA. VcE =5V 6 dB
Rs=2Kil, f=1KHz
Turn On Time ton Ic=10mA.IB,=1mA 150 ns
Turn Off Time toff VB8=3.6V. IB2= 1 mA 800 ns
R,=R, =5KO. RL =9900
Marking
c8 SAMSUNG SEMICONDUCTOR .
478
BCW60B NPN EPITAXIAL SILICON TRANSISTOR

80T-23

Collector-Emitter Voltage VeEo 32 V,
Emitter-Base Voltage VEBO 5 V.
Collector Dissipation Pc 350 mW'
Storage Temperature Tstg , . 150 °C
• ReIer to MMBT3904 lor graphs
•
1. Base 2. Emitter 3 Collector
Collector-Emitter Breakdown Voltage BVeEo 'e=2.,OmA, 'B=O 32 V·

Emitter-Base Breakdown Voltage BVFBe IE=1.0,.,A, Ir=O 5 V
Collector Cutoff Curfent ICEs VeE =32V, VB~=O 20 nA
Emitter Cutoff Current 'I EBO VEB =4V, le=O 20 nA
DC Current Gain hFE VeE =5V, le= 1 O,.,A 20
VrF=5V. Ir=2.0mA 180 310
VcE =1V, Ic=50mA 70
Collector-Emitter Satur.ation Voltage VeE (sat) le=50mA" IB= 1.25mA 0.55 V
le= 1 OmA, 'B=0.25mA 0.35 V
Base-Emitter Saturation Voltage VBE (sat) ir=50mA,IB=1.25mA 0.7 1.05 V
le=50mA, IB=0.25mA 0.6 0.85 V
Base-Em'itter On Voltage, IIBE (on) VeE =5V, Ic=2.0mA 0.55 0.75 V
Current Gain-Bandwidth Product fr Ic=10mA, VcE =5V 125 MHz
1=1 MHz
Output Capacitance Cob VeB =10V,IE=0 ' 4.5 pF
1=1.0MHz
Noise Figure NF Ic=0.2mA, VcE =5V 6 dB'
R~=2KO, 1=1KHz
Turn On Time ton Ic=10mA,IBi=1mA 150 ns
Turn Off Time tqff VBB =3.6V, IB2= 1 mA 800 ns
RI = R, = 5KO, RL = 9900
Marking

BCW60C NPN EPITAXIAL SILICON TRANSISTOR

80T-23

Storage Temperature Tstg 150 'c
1. Base 2. 'Emitter 3. Collector
Collector-Emitter Breakdown Voltage BVcEo Ic=2.0mA, le=;O 32 V

Emitter-Base Breakdown Voltage BV,eo IE=1.0/lA,lr=0 '5 V
Collector Cutoff' Current ICEs VCE=32V. VBE=O 20 nA
Emitter Cutoff Currfilnt lEBO VEe =4V, Ic=U 20 nA
DC Current Gain . hFE VcE =5V,lc=10/lA 40
V-r=5V. Ic=2.0mA 260 460
VcE =1V, Ic=50mA' 90
Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA, le=1.25mA .0.55 V
Ic=10mA,le=0.25mA 0.35 V
Base-Emitter Saturation Voltage VeE (sat) tr;=50mA.I;'=1.25mA 0.7 1.05 V
Ic=50mA, le=0.25mA 0.6 0.85 V
Base-Emitter On Voltage V~E (on) VCE.=5V, Ic=2.0mA 0.55 0.75 V
Current Gain-Bandwidth Product fr Ir=10mA, VcE =5V 125 MHz
f=1MHz
Output CapaCitance Cob Vce=.10V, IE=O 4.5 pF
f=1.0MHz
Rs=2KO, f=1KHz
Turn On Time ton Ic =10mA,le,=1mA 150 ns
Turn Off Time toff Vee=3.6V, le2= 1 mA 800 ns
R,=R,=5KO, RL =9900
Marking
C SAMSUNG SEMICONDUcroR 480

BCW60D NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

Collector Current Ic .100 mA
Storage Temperature Tstg. 1bO °C
II
t. Base 2. Emitter 3. Collector
. Characteristic Symbol Test Condition Min Max Unit
Collector-Emitter Breakdown Voltage BVcEo Ic=2.0mA. la=O 32 V

Emitter-Base Breakdown Voltage RV,RO IE=1.0J.lA. 10=0 5 V
Collector Cutoff Current ICES VcE =32V V8E =0 20 nA
DC Current Gain hFE VCE=5V. Ic=10J.lA 100
VCE=5V. Ic=2.0mA 380 630
VCE = 1V. Ic=50mA 100
Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA, IB=1.25mA 0.55 V
Ic=10mA.IB=0.25mA . 0.35 V
Base-Emitter Saturation Voltage VBE (sat) I. = ,)OmA. 10= 1 2')mA 0.7 1.05 V
Ic=50mA, 1.=0 25mA 0.6 0.85 V
Base-Emitter On Voltage Val (on) VCE=bV, Ic=L.UmA 0.55 0.75 V
Current Gain-Bandwidth Product 1r Ic=10mA. VcE =5V 125 MHz
f=1MHz
Output Capacitance Cob Vca= 1 OV. IE=O 4.5 pF
f=1.0MHz
NOise Figure NF Ic=0.2mA. VcE =5V '6 dB
Rs=2KO. f=1KHz
Turn On Time '-,n Ic=10mA.IB,=1mA 150 ns
Turn Off Time toff Vaa=3.6V. 1§2= 1 mA 800 ns
R,=R,=5KO. RL =9901l
Marking
.c8 SAMSUNG SEMiCoNDUCTOR

481
BCW61A PNP' EPITAXIAL SIl-ICON TRANSISTOR

SOT-23
ABSOl-UTE MAXIMUM RATI~GS (Ta =2S0C)

~
Collector-Base Voltage VCBO ,32 V

Emitter-Base' Voltage VEBO 5.0 V
Collector Current Ic' 100 mA
• Refer to MMBT5086 'for graphs
1. Base 2. EmItter 3. Collector
'ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic SymbOl Test Condition Min Max Unit
Collector-Emitter Breakdown Voltage ' BVCEO Ic=2mA, ,B=:,O . 32 V

Emitter-Base Breakdown Voltage BVEBO IE= 1fAA, /c=0 5 ,v
Collecto~ Cutoff Current ICEs VcE ",,32V, VBE=O ,20 nA
DC Current Gain hFE VrF =5V, Ic=2mA 120 220
VcE =1V, Ic=50mA 60
Collector-Emitter Saturation Voltage VCE (sat) Ic=; 1 OmA, IB=0.25mA, 0.25 ' V
Ic=50mA, IB=1.25mA 0.55 V
Base-Emitter Saturation Voltage VB~ (sat) Ic=10mA, 'B=0,25mA 0.6 0.85 V
Ic=50mA,IB=1.25mA 0.68 1.05 V
Base-Emitter On Voltage. VBE (on) Ic=21j1A; VrF =5V 0.6 .0.75 V
Output Capacitance Cob VcB =10V, 1.=0 6 pF
f=1MHz
Noise Figure NF Ic=0.2mA, VCE=5V 6 dB
Rs=2KO, f=1 KHz
Turn On Time ton Ic=10mA,IB1=1mA 150 ns
Turn Off Time toll IB2= 1 mA, VB8=3.6V 800 ns
RL =9900
Marking

BCW61B PNP EPITAXIAL SILICON TRANSISTOR

SOT-23
Collector-Base Voltage V~An 32 V

ELECTRICAL CHARACTERISTICS (Ta ='25 ° C)
Collector-Emitter Breakdown Voltage BVCEO Ic=2mA, le=O 32 V

Emitter-Base Breakdown Voltage HVEBO IE=1jJA,lc=0 5 V
Collector Cutoff Current ICES VcE =32V, VeE=O 20 nA
DC Current Gain hFE VCE=5V,lc=10jJA 20
VCE=5V. Ic=2mA 140 310
VcE =1V, Ic=50mA 80
Collector-Emitter Saturation Voltage VCE (sat) Ic= 1OmA,·IB=0.25mA 0.25 V
Ic=50mA, IB=1.25mA 0.55 V
Base-Emitter Saturation Voltage VeE (sat) Ic=10mA, IB=0.25mA 0.6 0.85 V
Ic=50mA, IB=1.25mA 0.68 1.05 V
Base-Emitter On Voltage VBE(on) Ic=2mA, V~F=5V 0.6 0.75 V
Output Capacitance Cob Vce=10V.IE=0 6 pF'
f=1MHz
Noise Figure NF Ic=Q.2mA, VcE =5V 6 dB
Rs =2KO, f=1KHz
Turn On Time Ion Ic=10mA,IB1=1mA 150 ns
Turn Off Time IQIf le2=1mA, VBB=3.6V 800 .ns
RL =9900
Marking


SOT-23
Collector-Base Voltage· VI"n.n 32 V

Collector-Emitter Voltage -VCEO 32 V
Emitter-Base Voltage v"su 5.0 V
1. Base 2. Emitter 3. Coilector
ELECTRICAL CHARACTERISTICS. (Ta =25°C)

.,
Collector-Emitter Breakdown Voltage BVcEo Ic=2mA. IB=O 32 V
Emitter-Base Breakdown Voltage I::lv"su IE=1/AA, Ic=O 5 V
Collector Cutoff Current IcEs VcE =32V, VBE=O 20 nA
DC Current Gain hFE VcE =5V,lc=10/AA 40
VrF=5V. Ic=2inA 250 460
VcE =1V, Ic=50mA 100
Collector-Emi~er Saturation Voltage VCE (sat) Ic= 1UmA, 'B=0.25mA 0.25 V
Base-Emitter Saturation Voltage VBE (sat).

Ic=50mA, IB=1.25mA
Ic= 1 Om A, 'B=0.25mA 0.6
0.55
0.85
, V
V
Ic=50mA, IB=1.25mA 0.68 1.05 V
Base-Emitter On Voltage VBE (on) !c=2mA, VcF =5V .0.6 0.75 V
Output Capacitance Cob VcB =10V, 'E=O 6 pF
f=1MHz
Rs=2KO, f=1KHz
Turn On Time Ion Ic=10mA,IB,=1mA 150 ns
Turn Off Time , loff IB2= 1 rT]A, VBB=3.6V 800 ns
RL =9900
Marking
c8 SAMSUNG SEMICONDUcro.R . 484

BCW61D PNP EPITAXIAL SILICON TRANSISTOR

SOT-23
Collector-Base Voltage Vmn 32 V

Emitter-Base Voltage Vc~ 5.0 V
•

I
Collector-Emitter Breakdown Voltage BVcEo Ic=2mA, la=O 32 V

Emitter-Base Breakdown Voltage BVEao le=l,..A, Ic=O 5 V
Collector Cutoff Current Ices VcE =32V, VaE=O 20 nA
DC Current Gain hFE VcE =5V,lc=10,..A 100
VCF=5V. Ic=2mA 380 630
VcE =lV, Ic=50mA 100
Collector-Emitter Saturation Voltage VCE (sat) Ic= 10mA, la=0.25mA 0.25 V
'c=50mA, la=1.25mA 0.55 V
Base-Emitter Saturation Voltage VeE (sat) Ic=10mA, la=0.25mA 0.6 0.85 V
Ic=50mA, la=1.25mA 0.68 1.05 V
Base-Emitter On Voltage Vae (on) Ic=2mA, Vc[=5V 0.6 0.75 ·V
Output CapaCitance Cob Vca=10V. IE=O 6 pF
f=lMHz 1
Noise Figure NF Ic=0.2mA, Vce=5V 6 dB
Rs=2KO,'f=lKHz
Turn On Time ton Ic= 1 OmA, la1 = 1 mA 150 ns
Turn Off Time loff la2= 1 mA. Vaa =3.6V 800 ns
RL =9900
Marking

BCW69 PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR SOT·23

'.
Collector Current Ie 10.0. mA
Storage Temperature Tstg 150. °C
-. Refer to MMBT5o.86 for graphs

Collector-Emitter Breakdown Voltage BV~EO I le=2.o.mA, IB=o.

I
45 V
-Collector-Emitter Breakdown Voltage BVcEs le= 1 o.o.,..A, VEB=o. 50. V
Emitter-Base Breakdown Voltage BVEBO IE= 1 o.,..A, le=o. 5 V
Collector Cutoff Current ICBO VcB =2o.V, IE=o. 10.0. nA
DC Current Gain hFE VcE =5V, Ic=2.o.mA 120. 260.
Collector-Emitter Saturation Voltage VCE (sat) Ic= 1 o.mA, IB=O.5mA 0..3 V
Base-Emitter On Voltage VBE (on) Ic=2.o.mA, VcE =5V 0..6 0..75 V
Output Capacitance Cob· VCB = 1 o.V, IE=o. 7.0. pF
f=1.o.MHz
Noise Figure NF Ic=o..2mA, VCE=5.o.V 10. dB
Rs=2.o.KO, .f=1.o.KHz
Marking

BCW70 PNP EPITAXIAL SILICON TRANSISTOR

S01·23
ABSOI..UTE MAXIMUM RATINGS (Ta =25°C)
Collector-Emitt\1r Voltage VCEO 45 V


ELECTRICAL CHARACTERISTICS (T a = 25°C)
Characteristic Symbol Test Condition Min I Max Unit
Collector-Emitter Breakdown Voltage BVcEO Ic=2.0mA, Is=O 45 V·

Collector-Emitter Breakdown Voltage BVcEs Ic= 1 OO!-,A, VES=O 50 V
Emitter-Base Breakdown Voltage BVEBO IE=10!-,A,lc=0 5 V
Collector Cutoff Current ICBO Vcs=20V, IE=O 100 nA
DC Current Gain hFE VcE =5V, Ic=2.0mA 215 500.
. Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,'ls=0.5mA 0.3 'V
Base-Emitter On Voltage VSE (on) Ic=2.0mA, VcE =5V 0.6 0.75 V·
Output Capacitance Cob Vcs= 1OV, IE=O 7.0 pF
f=1.0MHz
Noise Figure NF Ic=0.2mA, VCE=5.0V 10 dB
Rs=2.0KO, f=1.0KHz
Marking
487
qs'SAMSUNG SEMICO.NDUCTOR
BCW71 NPN EPITAXIA'L SILICON TRANSISTOR
GENER.AL PURPOSE TRANSISTOR

50T-23

Collector-Emitter Voltage Vew 45 V
Collector-Base Brea~down Voltage BVeBo le=10f'A, k=O 50 V

Collector-Emitter Breakdown Voltage BVew le=2mA. IB=O 45 V
Collector-Emitter Breakdown Voltage BVeEs le=2mA, VEB=O 45 V
Emitter-Base Breakdown Voltage BVEBo . IE= 1Of'A,lc=0 5 V
Collector Cutoff Current leBo VCB=20V, IE=O 100 nA
DC Current Gain hFE VeE =5V, le=2mA 110 220
Collector-Emitter Saturation Voltage VeE (sat) le=10mA,IB=0.5mA 0.25 V
le=50mA, IB=2.5mA 0.21 V
Base-Emitter Saturation Voltage VB' (sat) Ic=50mA, IB=2.5mA 0.85 if
Base-Emitter On Voltage VB' (on) Ic=2mA, VcE =5V 0.6 0.75 V
Current Gain-Bandwidth Product fr le=10mA, VeE =5V 300 MHz
f=35MHz
Output Capacitance Cob VeB =10V, 1,=0 4 pF
f=1MHz
Noise Ftgure NF le=0.2mA, VeE =5V 10 dB
Rs=2KIl, f=1KHz
Marking
c8 SAMSUNG SEMICONDUCTOR'
488
BCW72 NPN EPITAXIAL SILICON TRANSISTOR

50T-23

Storage Temperature' Tstg 150 °C
Collector-Base Breakdown Voltage BVcBo Ic=10j./A,IE=0 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic=2mA. 'B=O 45 V
Collector-Emitter Breakdown Voltage BVcEs Ic=2mA, VEB=O 45 V
Emitter-Base Breakdown Voltage BV EBO IE =10"A,lc=0 5 V
Collector Cutoff Current Icso VcB =20V, IE "= 0 ' 100 nA
DC Current Gain hFE VcE =5V, Ic=2mA 200 450
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA. IB=0.5mA 0.25 V
Ic=50mA, IB=2.5mA 0.21 V
Base-Emitter Saturation Voltage VBE (sat) Ic=50mA, ·IB=2.5mA 0.85 V
Base-Emitter On Voltage VBE (on) Ic=2mA, VcE =5V 0.6 0.75 V
f=35MHz
Output Capacitance Cob VCB = 1 OV, IE =0 4 pF
f=1MHz
Rs=2KO, f=1KHz
Marking
ciS SAMSUNG SEMICONDUCTOR- 489

· BCX70G .. NPNE·PITAxIAL SILICON TRANSISTOR

50T-23
ABSOLUTE MAXIMUM RATINGS (Ta~25°C)

Emitter-Base Voltage VEBO 5 'V
Collector Dissipation Pc 350 mW·
• ReIer to MMBT5088 lor graphs
Collector-Emitter Breakdown Voltage BVcEO 1r.=2mA, IB=O 45 V

Emitter-Base Breakdown Voltage BVEBO IE = 1J.lA. le=O 5 V
Collector Cutoff Current ICES VcE =32V; VBE=O 20 nA
Emitter Cutoff Current lEBO VEB=4V, 10=0 20· nA
DC Current Gain liFE .. Vr:F=5V. Ic=2mA 120 220
VcE =lV, le=50mA 60
Collector-Emitter Saturation Voltage VeE (sat) Ic= 1OmA, IB=0.25mA 0.35 V
Ic=50mA. 1"=1 25mA 0.55 V
Base-Emitter Saturation Voltage VBE (sat) le=50mA, IB=0.25mA 0.6 0.85 V
Ic=50mA, IB= 1.25mA 0.7. 1';05 V
Base-Emitter On Voltage VBE(on) Ic=2mA, VCE=5V 0.55 0.75 V
Current Gain-Bandwidth Product fr VCE=5V,lc=10mA 125 MHz
1=100MHz
Output Capacitance Cob VcB =10V, IE=O 4.5 pF
l=lMHz
Noise Figure NF Ic=0.2mA, VeE=5V 6 dB
1= 1 KHz, Rs:=2KO
Turn On Time ton Ic=10mA,IB,=lmA 150 ns
Turn Off Time tolf IB2 =lmA, VB8=3.6V 800 ns
RL=9900, R,=R,=5KO
Marking
c8 SAMSUNG·SEMICONDUcroR 490
BCX70H NPN EPITAXIAL SILICON TRANSISTOR

50T-23


Emitter-Base Breakdown Voltage BVEBO ·IE=1.01-/A. Ir=O 5 V
Collector Cutoff Current ICES VCE=~2V VBE=O 20 nA
Emitter Cutoff Current lEBO VEB =4V, Ic=O 20 nA
DC Current Gain hFE VcE =5V,lc=10I-/A 20
VCF=5V. Ic=2.0mA 180 310
VcE =lV, Ic=50mA 70
Ic=50mA. IR=1.25mA 0.55 V
Base-Emitter Saturation Voltage VBE (sat) Ic=50mA, Is=0.25mA 0.6 0.85 V
Ic=bUmA, IB= 1.~bmA 0.7 1.05 V
Base-Emitter On Voltage VBE (on) Ic=2.0mA, VcE =5V 0.55 0.75 V
Current Gain-Bandwidth Product fr Ic =10mA, VcE =5V 125 MHz
f=lMHz
Output Capacitance Cob VcB =10V,IE=0 4.5 pF
f=100MHz
Noise Figure NF VcE=5V, Ic=0.2mA 6 dB
Rs=2KI2, f=lKHz
Tum On Time ton Ic=10mA, IB1=1.0mA 150 ns
Tum Off Time t, 'I VBB=3.6V, IB2= 1.0mA 800 ns
R.=R2 =5KI2, RL =99011
Marking

BCX70J NPN EPITAXIAL SILICON TRANSISTC)R
GENERAL PURPOSE TRANSISTOR ''', "
50T·23

I Emitter-Base Voltage VEBO 5 V
• 'Refer to MMBT3904 for graphs
1 Base 2 Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (Ta ='25°C)
Collector-Emitter Breakdown Voltage BVcEo Ic=2.0mA. Is=O 45 V

Emitter-Base Breakdown Voltage BVEBO IE=1.0".A. Ir=O 5 V
Collector Cutoff Current ICEs VcE =32V VBE=O 20 nA
Emitter Cutoff Current lEBO VEB=4V. Ic=U 20 nA
DC Current Gain hFE VcE =5V.lc=10".A 40
. Vr, =fiV. Ic=2.0mA 250 460
VCE=IV. Ic=50mA 90
. Collector-Emitter Saturation Voltage VCE (sat) I, = 1UmA. IB=0.25mA 0.35 V •
Ic=50mA, IB=1-.25mA 0.55 V
Base-Emitter Saturation Voltage VBE (sat) Ic=50mA. Is=O 25mA 0.6 0.85 V
Ic=50mA. Is=1 25mA 0.7 1.05 V
Base-Emitter On Voltage VSE (on) .lc=2.0mA, VcE =5V 0.55 0.75 'v
Current Gain-Bandwidth' Product h. Ic= 1 OmA. VCE=5'{ 125" MHz
f=100MHz
Output Capacitance Cob Ves= 1 OV, IE=O 4.5 pF
f=1MHz
Noise Figure NF VCE=5V. Ic=0.2mA 6 dB
Rs =2KO, f=1KHz
Turn On Time ton Ic= lOmA. IS1 = 1 .0mA 150 ns
Turn Off Time tott VSB=3.6V. IB2=1.0mA 800 ns
R, =R,=5KO. RL =9900
Marking

BCX70K NPN EPITAXIAL SILICON TRANSISTOR

50T-23

Collector-Emitter Breakdown Voltage BVcEO Ic=2.0mA,I,=0 45 V

Emitter-Base Breakdown Voltage BVEBO IE=1.0",A, Ir=O 5 V
Collector Cutoff Current 'CES VcE=32V Val =0 20 nA
Emitter Cutoff Current lEBO VEB=4V. Ic= 0 20 nA
DC Curreot Gain hF' VcE =5V, Ic =.10",A 100
Vcr =5V, Ic=2.0mA 380 630
Vc,=lV, Ic=50mA 100
Collector-Emitter Saturation Voltage VCE (sat) Ic= I UIlIA, IB=0.25mA 0.35 V
Ic=50mA,ls=1.25mA 0.55 V
Base-Emitter Saturation Voltage VBE (sat) Ic=50mA, Is=0.25mA. 0.6 0.85 V
Ie =50mA, Is= 1.25mA 0.7 1.05 V
Base-Emitter On Voltage VBE (on) Ic=2.0mA, VcE=5V ·0.55 0.75 V
Current Gain-Bandwidth Product fr Ic=10mA, VcE =5V 125 MHz'
f=100MHz
Output Capacitance Cob Ves= 1OV .. 1,=0 4.5 pF
f=lMHz
Noise Figure NF VCE =5V, le=0.2mA 6 dB
Rs=2KO, f= 1 KHz
Turn On Time ton Ic= 1 OmA, .lS1 = 1.0mA 150 ns
Turn Off TIme toll Vss=3.6V, IS2= 1.0mA . 800 ns
R,=R,=5KO, RL =9900
Marking

BCX71G- . PNP EPITAXIAL' SILICON TRANSISTOR

80T-23
ABSOLUTE MAXIMUM RATINGS'(Ta =25°C)
Coliector-Base Voltage VCBO .45 V

Emitter-Base Voltage VESO 5.0 V
Coliector-Emitter Breakdown Voltage BVcEo Ic=2mA, Is=O 45 V

Emitter-Base Saturation Voltage BVEso le=1/-1A, Ic=O 5 V
Collector Cutoff Current ICES Vce=32V, VBE=O 20 nA
DC Current Gain hFE Vce=5V, Ic=2mA 120 220
VcE =1V, Ic=50mA 60
Coliector-Emitter Saturation Voltag'e VCE (sat) Ic= 10mA, 1a=0.25mA 0.25 V
Ic=50mA,ls=1.25mA 0.55 V
Base-Emitter Saturation Voltage VBI=lsat) Ic= 1 OmA, Is=0.25mA 0,6 0.85 V
Ic=50mA, Is=1.25mA 0.68 1.05 V
Base-Emitter On Voltage. VBE (on) Ic=2mA, VcF =5V 0.6 0.75 V
Output Capacitance Cob Vcs=10V, IE=O 6 pF
f=1MHz
Noise Figure NF Ic=0.2mA, VcE ;'5V 6 dB
Rs=2KIl, f=1 KHz
Turn On Time ton Ic =10mA,ls,=1mA 150 ns
Turn off Time toll . IS2= 1 mA, Vss =3:6V 800 ns
RL=99011
Marking

BCX71H PNP EPITAXIAL SILICON TRANSISTOR'

SOT-23

Collector .Dissipation Pc 350 mW
1 Base 2. EmItter 3. Collector
Collector-Emitter Breakdown Voltage BVCEO Ic=2mA, Is=O 45 V

Emitter-Base Breakdown Voltage . BVEBO IF=1IlA. lr=O 5 V
Collector Cutoff Current ICES VcE =32V, VBE=O 20 nA
DC Current Gain hFE Vc.=bV, Ic= 1vilA 30
VCE=5V.lc=2mA 140 310
! VcE =1V, Ic=50mA 80
Collector-Emitter Saturation Voltage VCE (sat) Ic= 1UmA, Is=0.25mA 0.25 V
Ic=50mA, Is= 1.25mA 0.55 V
Base-Emitter Saturation Voltage VSE (sat) Ic=10mA,ls=O.25mA 0.6 0.85 V
Ic=50mA, Is= 1.25mA 0.68 1.05 V
Base-Emitter On Voltage VSE (on) Ic=2mA, Vrr =5V 0.6 0.75 V
Output Capacitance Cob Vcs=10V, 'E=O 6 pF
f=1MHz
f=1KHz, Rs=2KO
Turn On Time ton Ic=10mA,lsl=1mA 150 ns
Turn Off Time toff IS2=1 rnA, V88=3.6V 800 ns
RL =9900·
; Marking

BCX71J PNP EPITAXIAL SILICON TRANSISTOR

80T-23
ABSOLUTE MAXIMUM RATINGS (Ta=25°'C)

Collector-Emitter Voltage VCE~ 45 ·V
ELECTRICAL CHARACTERISTICS (Ta =25°C) .
Collector· Emitter Breakdown Voltage . BVcEo Ic=2mA, IB=O 45 V

Emitter-Base Breakdown Voltage BVEBO Ir=h,A. 'Ir=O 5 V
Collector Cutoff Current ICEs VcE =32V, VBE=O 20 nA
DC Current Gain hFE VcE=bV, Ic= 1OI'A 40
VOl =5V. Ic=2mA 250 460
le=50mA,IB=1.25mA 0.55 V
Base-Emitter Saturation Voltage VBE (sat) le= 1 OmA, IB=0.25mA 0.6 0.85 V
le=50mA, IB=1.25mA 0.68 1.05 V
Base-Emitter On Voltage VBE (on) le=2mA, VCI =5V 0.6 0.75 V
Output Capacitance Cob VcB =10V.I E =0 6 pF
f=1MHz
Noise Figure NF le=0.2mA, VcE =5V 6 dB
f=1KHz, Rs=2KO'
Turn On Time ton le=10mA,IB1 =1mA 150 ns
Turn Off Time 'Ioff IB2= 1 mA, VBB=3.6V 800 ns
RL =9900
Marking

BCX71K PNP EPITAXIAL SILICON TRANSISTOR

&OT·23
ABSOLUTE MAXIMUM RATINGS (Ta =25°C) , I

I

Emitter-Base Voltage Veoo 5.0 V
Col/ector Current Ic 100 mA
Col/ector Dissipation Pc 350 mW
Collector-Emitter Breakdown Voltage BVcEO Ic=2mA, IB=O 45 V

Emitter-Base Breakdown Voltage BVEoo IE=1j.1A,lc=0 5 V
Col/ector Cutoff Current ICEs VCE=32V. VBE=O 20 nA
DC Current Gain hFE VcE =5V, Ic= 1U",A 100
VcE =5V, Ic=2mA 380 630
VCE = IV, Ic=50mA 110
Collector-Emitter Saturation Voltage VCE (sat) Ic= 1 OmA, IB=0.25mA 0.25 V
Ic=50mA, IB=1.25mA 0.55 V
Base-Emitter Saturation Voltage· VBE (sat) . Ic=10mA, IB=0.25mA 0.6 0.85 V
Ic=50mA, IB=1.25mA 0.68 1.05 V
Base-Emitter On Voltage VBE (on) Ic=2mA, VcF =5V 0.6 0.75 V
Output Capacitance Cob VCB=10V. IE=O 6 pF
f=1MHz
Rs=2KO, f=1KHz
Turn On Time ton Ic=10mA,IB1=1mA 150 ns
Turn Off Time toff IB2 =1 mA, V8B=3.6V 800 ns
RL =9900
Marking

<MM8A811C5' " PNP'" EPITAXIA'L SILICON .tRANSiStoR
DRIVER TRANSISTOR
80T-23
Characteristic Symbol Rating , Unit
Collector-Base Voltage ,VCBO 50 V

Collector-Emitter Voltage Vc';' 45 V
Emitter-Base Voitage VEBO 5 V
• Refer to MMBT5086 for .graphs
ELECTRICAL CHARACTERISTICS ,(Ta =25°C)
Collector-Base Breakdown Voltage BVcBO Ic=100",A.IE=0 50 V,

Collector-Emitter Breakdown Voltage BVcEO Ic= 1 ,OmA. 18=0 45 V
Emitter-Base Breakdown Voltage BVeeo IE =1 0"cA. Ic= 0 5 V
Collector Cutoff Current lceo . VcB"'40V,IE=0 50 nA
Emitter Cutoff Current lEBO VEB=5,OV. Ic=O 50 nA
DC Current Gain hFE VCE=3V.lc=0,lmA 150
VCE=3V. Ic=0.5mA 135 270
Collector-Emitter Saturation Voltage VCE (sat) Ic=20mA. 18=2.0mA 0.3 V
Current Gain-Bandwidth Product h Ic=1.0mA. VCE=6.0V 75 MHz
f=100MHz
MarklnQ
c8 SAMSUNG SEMICONDUCTOR 498 '

MMBA811C6 PNp· EPITAXIAL SILICON TRANSlsmR
DRIVER TRANSISTOR
SOT-23

Characteristic Symbol Test Condition Min Mall Unit
Collector-Base Breakdown Voltage BVeBO le= 100lolA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVeEo le= 1.0mA, Is=O 45 V
Emitter-Base Breakdown Voltage BVEBO IE,=10"A, ic=O 5 V
Collector Cutoff Current lceo Vcs=40V, IE=O 50 nA
Emitter Cutoff Current lEBO VEB =5.0V, le=O 50 nA
DC Current Gain hFE VeE=3V,le=0.1mA 150
VeE=3V, Ic=0.5mA 200 400
Collector-Emitter Saturation Voltage VCE (sat) Ic=20mA,ls=2.0mA 0.3 V
Current Gain-Bandwidth Product fr Ic=1.0mA, VCE=6.0V 75 MHz
f=100MHz
Marking

MMBA811C7 PNP EPITAXIAL SILICON TRANSISTOR
DRIVER TRANSISTOR
80T-23
Collecto~-B8se Voltage Vceo 50 V

Emitter-Base Voltage VEeo 5 -V
Coliector Dissipation Pc 350 mW
1. Base 2 Emltter;3. CoHector
-_ ELECTRICAL CHARACTERISTICS (Ta =25°C)
Collector-Base Breakdown Voltage BVceo Ie= 1OOIlA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic= 1.0mA, le=O 45 V
Emitter-Base Breakdown Voltage BVEBO IE= 1OfJ A,lc=0 5 V
Collector -Cutoff Current leBO _Vce=40V, IE=O 50 nA
Emitter Cutoff Current lEBO VE8=5.0V, Ic=O 50 nA
DC Current Gain hFE VcE=3V, Ic=0.1 mA 150
, VcE=3V, Ic=0.5mA 300 600
Collector-Emitter Saturation Voltage VCE (sat) Ic=20mA, le=2.0mA 0.3 V
Current Gain-Ba/:ldwidth Product fr Ic=1.0mA, VCE=6.0V 75 MHz
f=100MHz
Marking
·ct ~SUN~ SEMICONDUCToR

500
MMBA811C8 PNP EPITAXIAL SILICON TRANSISTOR· I
I
I
I
i
DRIVER TRANSISTOR
SOT-23

Coliector-EmittE1r Voltage Vceo 45 V
Collector-Base Breakdown Voltage BVcBO Ic= 1 OOIlA, le=O 50 V

Emitter-Base Breakdown ·Voltage BVeBO le=10IlA, Ic':"O 5 V
Collector Cutoff Current IcBO VcB=40V, IE=O 50 nA
Emjtter Cutoff Current lEBO VEB =5.0V, Ic=O 50 nA
DC Current Gain hFE VcE=3V, Ic=0.1 mA 150
VCE=3V, Ic=0.5mA 450 900
Collector-Emitter Saturation Voltage VCE (sat) Ic=20mA, IB=2pmA 0.3 V
Current Gain-Bandwidth Product iT Ic= 1.0mA, VCE=6.0V 75 MHz
f=100MHz
Marking
501
MMBA812M3 .. PNPEPITAXIAL SILICON TRANSISTOR

S01-23
ABSOLUTE MAXIMUM· RATINGS (Ta=25°C)

Emitter-Base Voltage VEOO 5 V
Storage Temperature- Tstg 150 'c

"",:,1'.. '
Collector Cutoff Current ICBO Vcs=40V. IE=O 100 nA

Emitter Cutoff Current IEOO VEs=5V. Ic=O 100 nA
DC Current Gain hFE VCE=6V. Ic=1mA 60 120
Collector-Emitter Saturation Voltage VCE (sat) Ic=30mA. Is=3mA 0.5 V
Base-Emitter On Voltage VSE(on) Ic=1mA. VcE=6V 0.8 V
Marking
("
·502
MMBA812M4 PNP .EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE. TRANSISTOR

SOT-23
Collector-Base Voltage VCFID 50 V

Emitter-Base Voltage . VEFID 5 V
Collector Current Ic ·100 rnA
Stqrage Temperature Tstg 150 ·C
I
ELECTRICAL CHARACTERISTICS (T~ = 25°C)
Characteristic Symbol. Test Condition Min Max Unit
Collector Cutoff Current ICFID VcB=40V, IE=O 100 ·nA

Emitter Cutoff Current IEFID V EB =5V, Ic=O 100 nA
DC Current Gain hFE VCE=6V,lc=1mA 90 180
Collector-Emitter Saturation Voltage VCE (sat) 1c=30mA, IB=3mA 0.5 V
Base-Emitter On Voltage VBE (on) Ic=1mA, VcE=6V 0.8 V
Marking.

MMBA812M5 ' ~ PNP EPITAXIAL SILICON TRANSISTOR '

80T-23
,ABSOLUTE MAXIMUM RATINGS (Ta =25°C)

Emitter-Base Voltage VEBO ' 5 V
Collector Current 'Ic 100 rnA
ELECTRICAL CHARACTERISTI~S (Ta = 25°C)
Collector Cutoff Current ICBO VCB=40V. IE=O, 100 nA

DC Current Gain hFE VCE=6V. Ic= 1 rnA 13,5 270
Collector-Emitler Saturation Voltage VeE (sat) Ic=30mA. IB=3mA 0,5 V
Base-Emitter On Voltage VBE (on) Ic= 1 rnA. VCE=6V 0,8 V
Marking
504
MMBA812M6 PNP EPITAXIAL SILICON TRANSISTOR

80T-23

Collector-Emitter. Voltage VCEo 40 V
Storage Temperature Tstg 150 . ·C
•
Collector Cutoff Current ICBO Vce=40V. IE=O 100 nA

Emitter Cutoff Current lEBO VEe=5V. Ic=O 100 nA
DC Current Gain hFE VCE=6V.lc=1mA 200 400
Collector-Emitter Saturation Voltage Vc~ (sat) Ic=30mA. le=3mA 0.5 V
Base-Emitter On Voltage VeE (on) Ic=1mA. VcE =6V 0.8 V
Marking
.c8 SAMSUNG SEMICONDUcroR 505

" , I
-MMBA812M7 , PNP E,PITAXIAL SILICON' TRANSISTOR

50T-23
ABSOLUTE MAXIMUM RATINGS (Ta=25~C) ,'".
Characterlstl,c Symbol Rating Unit
Collector-Base Voltage VCf¥) 50 V

Collector-E;mitter Voltage VCEO 40 V
Collector 'Dissipation Pc 350 mW
Storage Temperature Tstg, 150 °C
1_ B~$e 2, Emitter 3, Collector '
Characteristic Symbol Test Condition, - 'Min Max Unit
Collector Cutoff Current ICBO Vcs =40V, le=O 100 nA

Emitter Cutoff Current lEBO Ves=5V, Ic=O 100 nA
DC Current Gain hFE Vce=6V: Ic=1mA 300 600
Collector-Emitter Saturation, Voltage Vce (sat) 1~=30mA, IB='3mA 0.5 V
Base-Emitter On Voltage Vse(ori) Ic= 1 mA, Vce =;',6V 0:8 V
Marking
c8 SAMSUNG SEMIcONDUCTOR .,- . 506

MMBC1009F1 NPN· EPITAXIAL SILICON TRANSISTOR
AM/FM RF AMPLIFIER TRANSISTOR SOT-23
ABSOLUTE. MAXIMUM RATINGS (Ta =25°C)

Collector Current. Ic 50 mA
•
Collector Cutoff Current ICBO VcB =15V.IE=0 100 nA

DC Current Gain hFE VCE=3V. Ic=0.5mA 30 60
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA •. ls=1.0mA 0.3 V
Current Gain-Bandwidth Product fr Ic= 1 mAo VCE=6V 150 MHz
f=100MHz
Output CapaCitance Cob Vcs=6V. I~=O 2 pF
f=1MHz
Noise Figure NF Ic=0.5mA. VcE =6V 2.5 dB
f= 1 MHz. Rg=5001l
Marking

/I
MMBC1009F2 ' NPN EPITAXIAL SILICON 'TRANSISTOR \
AM/FM t:\F AMPLIFIER TRANSISTOR 50T-23
ABSOLUTE MAXIMUM RATINGS (T;=25 P C)
Characteristic SymbPl ' Rating Unit

Collector-Emitte'r Voltage VCEO ' 25 V
Collector Cu'rrent Ic 50 mA
Storage Temperature Tstg , ,
150 °C
"
ELECTRICAL CHARACTERISTICS (Ta =25 °C) 1. Ba~ 2. Emitter 3. Collector
Characteristic, SymbPl Test Condition Min Typ Max Unit
Collector Cutoff Current Iceo Vce= 15V, IE=O 100 nA

DC Current Gain hFE Vce=3V, Ic=0.5mA 40 80
.Collector-Emitter Saturation Voltage VCE (sat) Ic ",10mA, le=1.0mA' 0,3 V
Current Gain:Bandwidth Product h Ic= 1mA, VcE =6V 150 MHz
f=100MHz
Output CaPaCitance Cob Vce=6V, IE=O '2 pF
f=1MHz
Noise Figure NF Ic=0.5mA, VcE =6V 2.5 dB
'f=1MHz,Rg=5000
,Marking
c8 SAMSUNG SEMICONDUcroR '

" :,
, :~' ~ , 508
MMBC1009F3 NPN EPITAXIAL SILICON TRANSISTOR
·AM/FM RF AMPLIFIER TRANSISTOR SOT-23

•
Collector Cutoff Current ICBO VcB =15V,I E=0 100 nA

Collector-Emitter Saturation Voltage VCE (sat) Ic= 1 OmA, IB~ 1 .0mA 0.3 V
Currerit Gain-Bandwidth Product fr Ic=1mA, VcE =6V 150 MHz
f=100MHz
Output .Capacitan~e Cob" VCB=6V, IE=O 2 pF
f=1MHz
NOise Figure NF Ic=0.5mA, VcE =6V 2.5 dB
t= 1MHz, Rg=500n
Marking
c8 SAMSUNGoSEMICONDUcrQR 509
· NPN EPITAXIAL SILlCONTRANSrsTOR
AM/FM RF AMPLIFIER TRANSISTOR I!OT-23
-ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Collector-Base Voltage VCBO '50 V

Collector-Emitter Voltage Vc~o 25 V
Collector Cutoff Current ICBO VcB =15V,IE=0 100 nA

Current Gain-Bandwidth Product fr Ic=lmA, VCE=6V 150 MHz
f=100MHz
Output CapaCitance Cob VcB =6V, IE=O 2 pF
f=lMHz
f=lMHz,Rg=5001l
Marking

MMBC1009F5 NPN EPITAXIAL SILICON TRANSISTOR
AM/FM- RF AMPLIFIER TRANSISTOR SOT-23
. ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Symbol Rating Unit.
Collector-Base Voltage V.CBO 50 V

•
ELECTRICAL CHARACTERISTICS (Ta =25~C)
Collector Cutoff Currimt ICBO VCB= 15V, IE=O 100 nA

DC Current Gain hFE VcE =3V, Ic=0.5mA . 135 270
f=100MHz
Output Capacitance Cob VCB=,sV, IE=O 2 pF
f=1MHz
·f= 1 MHz, Rg=500!l
Marking
..• ~

MMBC1622D6 . NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR SOT·23

Collector-Emitter Volta!)e VCEO 35 V
Emitter-Base Voltage VEBO ' 5.0 V
Storage Temperature ,. Tstg 150 °C
1. BaSe 2, Emitter 3. Collector

Collector Cutoff Cur.rent ICBO Vce=25V. IE=O 50 nA

'Emitter Cutoff Current ' lEBO VEe=5V. Ic=O .50 nA
DC Current Gain hFE VCE=3V. Ic=O.l mA 150
VcE~3V. Ic=0,5mA 200 400 '
Collector-Emitter Saturation Voltage . VCE (sat) Ic=100mA.le=10mA 0,3' V
Base-Emitter On Voltage VeE (on) Ic=0.5mA. VCE=3V 0.55 0.65 V
Current Gain-Bandwidth product fr VCE=6V. IE = 1 .0mA 100 MHz
f=100MHz
Marlling
512
MMBC1622D6 NPN EPITAXIAL SILICON TRANSISTOR

1000 10000
500 1= Vce""'3V
= 10= 101 8
~
300
~ 100 Z 1000
~
I:
Ii
~
500
300
V
i 10
VeElsat)
=t::::
30
1 10
0.1 D.3 0.5 3 5 10 30 50 100 3 5 10 30 50 100 300 500 1000
Ie (mAl, COLLECTOR CURRENT Ie (mAl, COLLECTOR CURRENT
CURRENT GAIN BANDWIDTH PRODUCT·

1000
r--- VCE=6V
5
3
1
0.1 0.3 o.s. 1 3 5 10 30 50 1()O
Ie (mAl, COLLECTOR CURRENT
c8 SAMSUNG SEMICONDUCTOR· '513

SOT~23
'ABSOLUTE MAXIMUM RATINGS (Ta =25°C)

Collector-Emitter Voltage, VCEO 35 V
• Refer to'MMBC1622D6 for graphs
Characteristic Symbol Test. Condition Min Max Unit

Emitter Cutoff Current lEBO VEB=·5V, Ic=O 50 nA
DC Current .Gain hFE VcE=3V, Ic=0.1 mA 150
VcE =3V, Ic=0.5mA 300 600
Collector-Emitter Saturation Voltage V~E (sat) Ic=100mA,IB=10mA 0.3 V
Base-Emitter On Voltage. . VBE (on) Ic=q.5mA. V,., =3V 0.55 0.65 V
Current Gain-Bandwidth Product fT VcE =6V IE=1mA 100 MHz
f=100MH,
Marking
514
MMBC1622D8 NPN EPITAXIAL SILICON TRANSISTOR
50T-23

Storage Temperature Tslg 150 °C
• Refer to MMBC1622D6 for graphs
•

DC Current Gain hFE VcE =3V, Ic=0.1 mA 150
VcE =3V, Ic=0.5mA 450 900
Collector-Emitter Saturation Voltage VCE (sat) Ic=100mA, IB=1 OmA 0.3 V
Base-Emitter On Voltage VBE (on) Ic=0.5mA. VcE =3V 0.55 0.65 V
Current Gain-Bandwidth Product fT VcE =6V IE.=1mA 100 MHz
f=100MHz
Marking
.c8 SAMSUNG SEMICONDU~OR 515·

MMBC162~L3 NPH EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR 80T-23

CO/lector-Emitter Voltage VCEO 40 V

,
Collector Cutoff Current ICBO VcB =40V; IE=O 100 nA

DC Current Gain 'hFE VcE :=6V. Ic=1.0mA 60 120 .
Collector-Emitter Saturation Voltage VCE (sat) Ic =·100mA. IB=10mA 0.3 V
Base-Emitter Saturation Voltage VBE (sat) Ic= 1 OOmA. IB= 1 OmA 1.0 V
Base-Emitter On Voltage VBE (on) Ic=1.0mA .\1., =6V 0.6 0.7 V
Current Gain-Bandwidth Product fr VcE ';'6V IE =10mA 200 MHz
I
1=100MHL
Marking
.c8 SAMSUNG SEMICONDUCTOR'

516
MMBC1623L3 NPN EPITAXIAL SILICON TRANSISTOR

100 --,-
10·~,.I\L
. / ,..,
eo 10.350,.1\
!ZW VV
1 ::::r--=±:c ~ --~=. ~-.:::..- ~
- 10.300,.1\
a:
a:
::>
u eo t~ i-""'" 10.250,.1\ ,0
t,
'"
~
~V
Vr-
10.200,.1\
i::l *.c_t+~~~~C~~~E~~=
1'_1~0,.l\ a --+:=-
W
oJ
oJ - ,- f -. - --I-- - 1-- .- ,...
8 40 ~ i I I :
~
g
r/ f..- I
10=100,.1\ f--
_~E- 1 -=tJ=.:::--=f-=: = '- . ._ _ = =
--t-::j-.:....t-
J! 1 / l>- -=-1=---=-:"::'--r- c=:r-c-I"t--t= '--t-- --- --
20 ,I J! 0.5
0.3
-+-+-- +-
--t---
--1--'- r---
-r- --r- --
10.50,.1\ _--+_1 1
• 0.1 1
I III
12 18 20 0.2 0.4 0.6 o.s lD 1.2
VeE (\I). COLLECTOR-EMITTER VOLTAGE VO' (V). BASE-EMITTER VOLTAGE
1000 0.
zlOOO
~
5000
f-- f-VCE':I1I.ev
3000 f-
DC CURRENT GAIN
1000
f--
CURRENT GAIN BANDWIDTH PRODUCT
VeE _&I
k"
••
I:
u
g i'""'--,
i 100
50
1----
30
10
3 5 10 30 50 100 300 500 1000 0.1 0.3 Q.5 3 5 10 30 50 100
Ie (mAl. COLLECTOR CURRENT Ie (mA), COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE OUTPUT CAPAC(TANCE
1000 0 100
500 0
W
50
I-- Ie-lOis r-- t-f-1MHz
~300 Ol--+- 30. r-- t-IE""O
g t--I-
Z
~1000
~ r-:-I-
::>
:t"- VSE (sat) -
~
!300
V
0.5
0 I- VeE lsat) J-- 0.3
0
3
I IIII
5 10 30 50 100 300 500
I
i
1000
0. 1
3 5 10 30 50 100 300 500 1000
Ie (mAl. COLLECTOR CURRENT Veo (\I). COLLECTOR-BASE VOLTAGE
517
· MI\t1BC1623L4 NPN EPITAXIAL SILICON TR4NSISTOR
50T-23 .

Siorage Temperature Tstg 150 °C
• Refer to MMBC1623L3 for graphs
Collector Cutoff Current ICBO Vce=40V, IE=O 100 nA

Emitter Cutoff Current lEBO VEe =5V, Ic=O 100 nA
DC Current Gain hFE VcE =6V, Ic= 1.0mA • 90 180
Collector-Emitter Saturation Voltage· VCE (sat) Ic=100mA,le=10mA 0.3 V
Base-Emitter Saturation Voltage VeE (sat) Ic =100mA,le=10mA 1.0 V.
Base-Emitter On Voltage VeE (on) Ic=1.0mA. Vr,=6V 0.6 0.7 V
Current Gain-Bandwidth Product fT VcE =6V: IE =10mA 200 MHz
f=100MHL
Marking
518
SOT-23
. Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO .50 V

Collector-Emitter Voltage. .VCEO 40 V
• Refer to MMBC1623L3 ,lor graphs
•
Collector Cutoff Current -lcBo VcB =40V, IE=O 100 nA

DC Current Gain hFE VcE =6V; Ic= 1.0mA 135 270
Collector-Emitter Saturation Voltage VCE (sat) Ic =100mA,IB=10mA .0.3 V
Base-Emitter Saturation Voltage VBE (sat) Ic =100mA,IB=10mA 1.0 V
. Base-Emitter On Voltage VB~ (on) Ic=1.0mA. Vcr =6V 0.6 0.7 V
Current Gain-Bandwidth Product . fT VcE =eV.IE=10mA 200 MHz
f=100MHz
Marking

MMBC1623L.6· NPN EPITAXIAL SILICON TRANSISTOR
80T-23
Collector-Base Voltage VceO 50 V

Emitter-Base Voltage VESO 5.0 V
EL.~CTRICAL CHARACTERISTICS (Ta = 25 ° C)
CharacteristiC Symbol .Test C\?ndition Min Max Unit
Collector Cutoff Current Icso Vcs=40V. IE=O 100 nA

Emitter Cutoff Current· IESO VEs=5V. Ic=O 100 nA
DC Current Gain hFE VCE=6V. Ic= 1.0mA 200 400
Collector-Emitter Saturation Voltage VCE (sat) Ic=100mA.ls=10mA 0.3 'V
Base-Emitter Saturation Voltage VSE (sat) Ic=100mA.ls=10mA 1.0 V
Base-Emitter On Voltage VSE (on) Ic= 1.0mA. Vr.,=6V 0.6 0.7 V
Current Gain-Bandwidth Product fT VCE=6V. IE=10mA 200 MHz
. f=100MHz
Marking

SOT-23

Collector Cutoff Current ICBO Vcs =40V, IE =0 100 nA

Emitter Cutoff Current lEBO VEs =5V, Ic=O 100 nA
DC Current Gain hFE VcE =6V, Ic= 1.0mA 300 &00
Collector-Emitter Saturation Voltage VCE (sat) Ic=100mA,ls=10mA 0.3 V
Base-Emitter Saturation Voltage VSE (sat) Ic= 1 OOmA, Is;= 1 OmA 1.0 V
Base:Emitter On Voltage VSE (on) IIC=1.0mA V, -fiV 0.6 0.7 V
Current Gain-Bandwidth Product fT VCE=6V. IE=lOmA 200 MHz
i f=100MHl
Marking
c8 SAMSUNG SEMICONDUCTOR· 521

MMBR5179 NPN EPITAXIA~. SILICON T~SlsrOR
RF AMPLIFIER TRANSISTOR
50T-23
ABSOLUTE MAXIMUM RATINGS (Ta =25°C)·

Emitter-Base Voltage VE~ 2.5 V
Collector Current Ic 50 ·mA
Derate above 25°C 2.8 mW/oC
. Storage Temperature Tstg -55"'150 °C
1. Base 2. Emitter 3. ColI.ctor
ELECTRICAL CHARACTERISTICS (Ta =·25°C)
Collector-Base Breakdown Voltage BVcBO Ic=0.01 mA, IE=O 20 V

Collector-Emitter Breakdown Voltage BVcEo Ic=3mA, Is=O 12 V
Emitter Base Breakdown Voltage BVEBO IE=0.01 mA, Ic=O 2.5 V
Collector Cutoff Current ICBO Vcs=15V,IE=0 0.02 fAA
DC Current Gain hFE VCE=1V,lc=3mA 25 )
Collector Emitter Saturation Voltage VCE (sat) ic=10rrfA,ls=1mA 0.4 V

Base-Emitter Saturation Voltage VBE (sat) Ic=10mA,ls=1mA 1 V·
Current Gain Bandwidth Product fr VcE =6V, Ic=5mA, f=100MHz 900 MHz
Collector Base Capacitance Ccb Vcs= 1 OV, IE=O, 1=0.1 MHz to 1 MHz 1 pF
Small Signal Current Gain hie VcE =6V, Ic=.2mA, f=1KHz 25
Noise Figure NF VcE=6V, Ic=1.SmA, .f=200MHz 4.5 ~B
Rs=500
Common Eniitter Amplifier Power Gain Gpe VcE =6V, Ic=5mA, f=200MHz 15 dB
Marking
~
)c8 SAMS·UNG SEMICONDUCTOR 522
MMBT2222 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR 801-23

Collector Current Ie flOO rnA
Storage Temperature Tstg lbU ·C

Collector-Base Breakdown Voltage BVeso le= 1OJ.lA, le=O 60 V

Collector-Emitter Breakdown Voltage BVeEO le= 1 OmA, IB=O 30 V
Emitter-Base Breakdown Voltage BVeso le=10j.lA,le=0 5 V
Collector Cutoff Current leEX Vee=60V, VBE =3V 10 nA
Collector Cutoff Current leBo Vcs=50V, IE=O 0.01 fAA
DC Current Gain hFe Vce=10V,lc=0.1mA 35
VeE =10V,le=1.0mA 50
VeE =10V,lc=10mA 75
·VcE =10V,lc=150mA 100 300
·VeE = 1 OV, le=500mA 30
• Collector-Emitter Saturation Voltage VeE (sat) le=150mA,IB=15mA 0.4 V
le=500mA, IB=50mA 1.6 V
• Base-Emitter. Saturati0':1 Voltage VBE (sat) le= 150mA, IB= 15mA 1.3 V
Ic=500mA, IB=50mA 2.6 V
Current Gain-Bandwidttl Product fr Ic=20mA, VcE =20V 250 MHz
f=100MHz
Output CapaCitance Cob VcB=10V,IE=0 8.0 pF
f=1.0MHz
Turn On TIme ton Voc=30V, VBE =0.5V 35 ns
Ic=150mA, IB1 =15mA
Turn Off Time totl Voc=30V,lc=150mA 285 ns
IB1 =IB2= 15mA
·Pulse test: Pulse Width:$300j.lS, Duty Cycl~2%
Marking

MMBT2222 MPN EPITAXIAL, SILICON TRANSISTOR
DC CURRENT GAIN CURRENT GAlN-BANDWIDTH PRODUcr

1000 1000
500 - VCE_1OV - f-Vce.2O\I

300
.- ' ......
\ /1,,1
10
3 5 10 30 100 300 500 1000 3 5 10 30 50 100 300,1500 1000
Ie (mAl. COI.LECIOII CURRENT lc(mAI. COLLECIOII~

.......~._~ •• ~. SATURATION VOLTAGE
10
12 !I
- Ie'.o' I
I 3
10
f-;.'M~'
~
"""- "\
l'
i
E
i V
I
i
"-
0.1
8 4
...... r--..
~~' 2
Illi
"
om'
, 1 3 5 10 30 50 100 300 500 1000 3510 3050 100
Ie ImA). COLLECIOII CUIIIIENT V.. IVI. COLLECIOII-IIAIWLTAGE

MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

•
Collector-Base Breakdown Voltage BVcBO Ic= 1OIlA,IE=0 75 V

Collector-Emitter Breakdown Voltage BVcEo Ic= 1 OmA, le=O 40 V
Emitter-Base Breakdown Voltage BVEBO IE=10IlA, Ic=O 6 V
Collector Cutoff Current IcBO Vce=60V, IE=O 0.01 IlA
• DC Current Gain hFE VCE = 1OV, Ic=0.1 mA 35
VcE =10V,lc =1mA 50
VCE=10V,lc=10mA 75
VcE =10V,l c=150mA 100 300
VcE =10V, 1~=500mA 40
• Collector-Emitter Saturation Voltage VCE (sat) Ic=150mA,le=15mA 0.3 V
Ic=500mA, le=50mA 1.0 V
• Base-Emitter Saturation Voltage VeE (sat) Ic= 150mA, le= 15mA 0.6 1.2 V
Current Gain-Bandwidth Product fr Ic=20mA, VcE =20V 300 MHz'
f=100MHz
Collector-Base Capacitance Cob Vce=10V, IE=O 8 pF
f=1MHz
Noise Figure NF Ic='100f/A, VcE =·10V 4 4 dB
Rs=1KO, f=1KHz
Turn On Time ton .' Vcc =30V,lc =150mA 35 ns
VBE =0.5V, Ie, = 15mA
le,=le2 =15mA
'Pulse test: Pulse Wldth::;300f/s, Duty Cycle~2%

Marking

, , ,
MMBT2'484 . NPN EPITAXIAL SILICON TRANSISTOR
LOW NOISE TRANSISTOR

SOT-23

Emitter-Base Voltage Veeo 6 V ,
Collector Dissipation Pc 350 mW,
Collector-Base Breakdpwn Voltage BVCBO Ic= 1 O,..A, le=O 60 V

Collector-Emitter Breakdown Voltage . BVceo Ic= 1 OmA,le=O 60 V
Emitter-Base Breakdown Voltage BVEBO IE= 1 O,..A,' Ic=O 5 V
Collector Cutoff Current ICBO Vce=45V, IE=O 10 nA
Emitter Cutoff Current lEBO . VEe =5V, 10=0 10 nA
DC Current Gain hce VCE=5V.le=1mA 250
VcE =5V, le= I umA 800
Collector-Emitter Saturation Voltage VCE (sat) Ic=lmA,le=O.lmA 0.35 V
Base-Emitter On Voltage VeE (on) Ic=lmA, VCE=5V 0.95 V
Output Capacitance Cob Vce=5.0V, IE=O 6 pF
f=lMHz,
Noise Figure NF Ic= 1 OjAA, VcE =5V 3 dB
Rs=10KO, f=lKHz
Marking

MMBT2907 PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR 80T-23
Characteristic Symbol R'ating Unit
Collector-~ase Voltage Vcso 60 V

Collector Current Ic 600 mAo
1, Base 2. Emitter 3. Collector

Collector-Base Breakdown Voltage BVcso Ic= 1 OIJA, 'E=O 60 V

·Collector-Emitter Breakdown Voltage BVcEo Ic=10mA,le=0 40 V'
Emitter-Base Breakdown Voltage BVEso IE=10~A, Ic=O 5 V
Collector Cutoff Current ,CEX VcE =30V, VeE =0.5V 50 nA
Collector Cutoff Current leso Vce=50V, 'E=O 0.02 ,..A
DC Current Gain hFE VcE =10V, Ic=O.lmA' 35
VCE = 1 QV, Ic= 1 .0mA 50
VcE =10V,lc=10mA 75
·VcE =10V,lc =150mA 100 300
·VcE =10V,lc=500mA 30
• Co!'ector-Emitter Saturation Voltage VCE (sat) 'c=150mA, le=15mA 0.4 V
'c=500mA,le=50mA 1.6 V
• Base-Emitter Saturation Voltage VeE (sat) Ic=150mA,le=15mA 1.3 V
Current Gain-Bandwidth Product fr 'c=50mA, VcE =20V 200 MHz
f=100MHz
Output CapaCitance Cob Vqe=10V,IE='0 8.0 pF
f=1.0MHz
Turn On TIme ton Vcc=30V,lc=150mA 45 ns
le1=15mA
Turn Off Time toff Vcc=6V, Ic= 150mA 100 ns
181 =le2= 15mA
·Pulse Test: Pulse Widt~300,..s" Duty Cycle::;2%
Marking
:--
.c8 SAMSUNG SEMICONDUcroR 527
MMBT2907 PNPEPITAXIAL SILICON TRANSistoR

1000 1000
500 I-- rYe.-1OV I-- r- YeE • 2OV

300
r\
'"
V
/
10 10
3 5 10 30 SO 100 300 500 1000 3 5 10 30 50 100 300 500 1000
Ie (mA), COLLECIOR CURRENT Ie (mA), COLLECIOR C,!RRENT
COLLECTOR·EMITTER SATURATION VOLTAGE OUTPUT CApACITANCE

10
12 11
I-- ie_lOis le .. O
rl_1M!lz
.10 ~
1
'\
Y"(IIII) 1,\
I'
1 ./ '~
Yce(1III)
i
0.01 1111 II
3 5 10 30 SO 100 300 500 1000 10 30 60 100
Ie (mA), COLLECIOR CURRENT Vee (V), COLLECIOR-IIASE VOLTAGE

MMBT2907A PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSfSTOR

SOT-23

Collector Dissipation. Pc 350 mW
'Refer to MMBT2907 for graphs
ELECTRICAL CHARACTERISTICS (Ta=25 0 C)

..
<;:haracteristic Symbol Test Condition Min Max Unit
Collector-Base Breakdown Voltage BVcBo Ic=10"A,IE=0 60 V

'Collector-Emitter Breakdown Voltage BVcEO Ic=10mA,IB=0 60 V
Emitter-Base Breakdown Voltage BVEBo IE=1O"A, Ir=O 5 V
Collector Cutoff Current ICBO Vca=50V 'E=O 0.01 "A
DC Current Gain hFE VCE=10V,lc=O.lmA 75
VCE;= 1 OV, Ic= 1.0mA ·100
VcE =10V,lc=10mA 100
'VcE =10V,lc=150mA 100 300
'VcE =10V,lc=500mA 50
'Collector-Emitter Saturation Voltage VeE (sat) Ic = 1 50mA, la = 1· 5mA D.4 V
Ic=500mA, 'B=50mA 1.6 V
'Base-Emitter Saturation Voltage VBE (sat) Ic=150mA, la=15mA 1.3 V
Ic=500mA, la=50mA 2.6 V
f=100MHz .
Output Capacitance Cob Vca= 1 OV, IE=O 8 pF
f=1.0MHz
Turn On Time ton Vcc=30V, ic= 150mA 50 ns
IB,=15mA
Turn Off Time toff Vcc=6V, Ic= 150mA 110 ns
IB,=IB2 =15mA
'Pulse Test: Pulse Width~300"s, Duty Cycle~2%

Marking

M.IVI&r390~ NPN .EPITAXIAL SILICON TRANSISTOR

80T-23
ABSOLuTE MAXIMUM RATINGS (Ta =25°C)

Emitter-Base .Voltage VEso 6 V
I Collector Dissipation Pc 350 mW
I Storage Temperature Tstg 150 °C
1. Base 2. Emitter 3, Collector

",,,
Collector-Base Breakdown Voltage BVcso Ic=10/AA,IE=0 60 V

'Collector-Emitter Breakdown Voltage BVcEO Ic=·1 mA, Is=O 40 V
Emitter-Base Breakdown Voltage BVEso IE=10/AA,lc=0 6 V
· Collector Cutoff Current ICEX VcE =30V, VEs =3V 50 nA
• DC Current Gain hFE VCE= 1V,·l c =0.1 mA 20
VcE'=1V,lc=1mA 35
VcE =1V,l c =10mA 50 150
VCE'1"1V, Ic=50mA 30
VcE =1V,lc =100mA 15
• Collector-Emitter Saturation Voltage VCE (sat) Ic=1 OmA,·ls=1 mA 0.2 V
Ic=50mA, Is=5mA 0.3 V
• Base~Emitter Saturation Voltage VSE (sat) Ic=10mA,ls=1mA 0.65 0.85 V
Ic=50mA, Is=5mA 0.95. 'V.
f=100MHz •
0l!tput Capacitance Cob Vcs=5V, IE=O 4 pF
f=1MHz
Noise Figure NF Ic=100/AA, VCE=5V 6 dB
Rs=1 KIl
f= 10Hz to 15.·7KHz
Turn On Time . ton ,. Vcc=3V, VsE =0.5V 70 ns
Ic= 1 OmA, IS1 = 1 mA
Turn Off Time toft Vcc=3V,lc=10mA 225 ·ns
IS1 =ls2= 1 rnA
'Pulse Test: Pulse Width:S;300",s, Duty Cycle:S;2%

Marking
.. ~
. GENERAL PURPOSE TRANSISTOR 801-23

•
ELECTRICAL CHARACTERISTICS (Ta= 25 0 C)
Collector-Base Breakdown Voltage BVcBO Ic= 1 Of'A, IE=O 60 V

'Collector-Emitter Breakdown Voltage BVcEo Ic=1mA,le=0 40 V
Emitter-Base Breakdown Voltage BVEeo IE= 1Of'A,lc=0 6 V
Collector Cutoff Current IcEx VcE =30V, VEe =3V 50 nA
• DC Current Gain hFE VCE = 1 V, Ic=0.1 rnA 40
VCE=1V,lc=1mA 70
VcE =1V,lc=10mA 100 300
VCE=1V,lc=50mA 60
VcE ='1 V, Ic= 1OOmA 30
• Collector-Emitter 'Saturation Voltage VCE (sat) Ic=10mA,le=1mA 0.2 V
Ic=50mA, le=5mA 0.3 V
• Base-Emitter Saturation Voltage VeE (sat) Ic=10mA,le=1mA 0.65 0.85 V
Ic=50mA, le=5mA 0.95 V
f=100MHz
Output Capacitance Cob, Vce=5V, IE=O 4 pF
f=1MHz
Noise Figure NF Ic=100f'A, VcE =5V 5 dB
Rs=1KO
f= 10Hz to 15.7KHz
Turn On Time ton Vcc=3V, VeE =0.5V 70 ns
lc= 1 OmA, Ie, = 1 rnA
le1=le2=1mA
• Pulse Test: Pulse Width~300f's, Duty Cycle~2%

Marking
c8 SAMSUNG SEMICONDUCTOR' 53~

~MBT3904 'NPN EPITAXIAL. SILICON TRANSISTOR
'DC CURRENT GAIN 'CURRENT GAIN-BANDWIDTH PRooUCT

1000
r-- 110&_
f--110&- V
,.. ........ 1--'
,/
./
\
V ,/
40
o 0.1 10
. Q3 D.5 1 3 5 10 30 150 100 0.1 !l.3 D.5 1 3 5 10 30 50100
Ie (IlIA). COLLECIOR CURRENT Ie (mA). COLLECTOR CURRENT

BASE-EMITTER.sATURATION VOLTAGE OUTPUT~TANCE
COLLECIOR-EMITTER SATURATION VOLTAGE
10
!
- 1e-1OI. _I.-J I f-1MHz
I
VIE (III)
i i'-...
I ~ ........
1
S 2
r-..
(III)
G.01 ! III
0.1 Q3 D.5 1 3 5 10 30 150 100 3510 30 150 100
Ie (mAl. COLLECIOR CUAIIENT _ (11). COLLECIOfI.IIASE VOLTAGE
cJSAMSUNG SEMICONDUCroR 532


501-23

EmiUer-Base Voltage VEOO 5 V
1. Base 2. Emitter~. Collector


I
Collector-Base Breakdown Voltage BVcoo Ic =10!,A,IE=0 40 V
'Collector-Emitter Breakdown Voltage BVcEO Ic= 1.0mA, le=O 40 V
Emitter-Base Breakdown Voltage BVEeo IE= 1 O!,A, Ic=O 5 V
Collector Cutoff Current ,cEx VcE =30V, VEe =3V 50 nA
• DC Current Gain hFE VCE=lV,lc=0.1mA 60
VCE=lV,lc=lmA 80
VcE =lV,lc =10mA 100 300
VCE=l,V, Ic=50mA 60
VCE=1V,lc=100mA 30
• Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,le=lmA 0.25 V
Ic=50mA, le=5.0mA 0.4 V
• Base-Emitter Saturation Voltage VeE (sat) Ic=10mA,le=1.0mA 0.65 0.85 V
Ic=50mA: le=5.0mA 0.95 V
Current Gain-Bandwidth Product fr Ic=10mA, VcE =20'l/ 250 MHz
f=100MHz
Output Capacitance Cob Vce=5V, 'E=O 4.5 pF
f';"1.0MHz
Noise Figure NF Ic= 1 OO!,A, VcE =5V 4 dB
Rs=1 KIl
f= 10Hz to 15. 7KHz
Turn On Time ton Vcc=3V, VeE =0.5V 70 ns
'c=10mA,le1 =lmA
Turn Off Time loff Vcc=3V,lc=10mA 300 ns
lel=le2=1mA
'Pulse Test: Pulse WidthS:300!,s, Duty CycleS:2%

Marking
~
c8 SAMSUNG SEMICONDUcToR 533
MMBr3906 PNP..EPITAXiALSILICON TRANSISTOR
DC CURRENT GAIN CURRENT GAIN-IIANDWIDTH PRODUCT

'000 '000
500
300
r- II •
vce"""v
~'OO
V
I:
}'O
10
3 5 '0 30 50 '00 300 500 '000 0.1 0.3 o.s 1 3 6 10 30 50 100
Ie (mA), COLLECTOR CURflENT Ie (mA), COLLECIOR CURRENT
BASE,EMITTER SATURATION VOLTAGE
'0
12
- Ie_lOla -l.-J
. f=lMHz,
I
10
,: Vae(
-
-
"-
, ~
-
ce(SBI
1-11'" I'-
OD, III
a., 0.3 o.s 3 5 '0 30 50 '00 10 20 30 50 100
Ie (mAl, COLLECIOII CURRENT YC8(V), COI.LECIOIIo8ASEIIOLTME
c8 SAMSUNG SEMICONDUCIOA 534

MMBT4123 . NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

Thermal Resistance Junction to Ambient Rth(j-a) 357 ·C/W
.ELECTRICAL CHARAqERISTICS (Ta = 25°C)
Characteristic

Symbol
BVcBO
Test Condition
Ic= 1 OjAA, le=O

Ic= 1 mA, le=O
Min
40
30
Max Unit
V
V
••
BVceo
Emitter-Base Breakdown Voltage BVeBO le= 101olA, Ic=O 5 V
Collector Cutoff Current IcBO Vcs=20V, le=O 50 nA
Emitter Cutoff Current leBO Vae=3V, Ic=O 50 . nA
• DC Current Gain hFe Vce=1V, Ic=2mA. • 50 150
Vce= 1V, Ic=50mA 25
• Collector-Emitter Saturation Voltage . Vce (sat) Ic=50mA, le=5mA 0.3 V
. • Base-Emitter Saturation Voltage Vee (sat) Ic =50mA, le=5mA 0.95 V
Current Gain-Bandwidth Product fr Vce=20V, Ic=10mA, f=100MHz 250 MHz
Collector Output- CapaCitance Cob .Vce=5V, le=O, f=100MHz 4 pF
Collector Input CapaCitance 'Cib Vee=0.5V, Ic=O, f=100KHz 8 pF
Collector-Base CapaCitance Ccb Vce=5V, le=O, f= 100KHz 4 pF
Noise Figure NF Vce=5V, Ic=1001olA, Rs=1kCl 6 dB
Noise Bandwidth=10Hz to 15.7KHz
• Pulse Test: PW~300"s, Duty Cycle~2%
Marking
~
MMBT4124 NPH ·EPITAXIAL SILlCQ~ T~NSISTOR'

SOT-23
Chara~teristic Symbol Rating Unit

Characteristic Symbol .Test Condition Min Max Unit
Collector-Base Breakdown Voltage BVcao Ic= 1 OIAA, IE=O 30 V

• Collector-Emitter Breakdown Voltage BVcEo Ic=1.0mA, 18=0 25 V
Emitter-Base Br.eakdown Voltage BVEBO . IE= 1 OIAA, Ic=O 5 V
Collector Cutoff Current ICBO VcB =20V, IE=O . 50 nA
Emitter Cutoff Current lEBO ·VEB.~3V, Ic=O 50 nA
• DC Current Gain hFE VCE=1V,lc=2mA 120 360
VCE=1V,lc=50mA 60
·Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA, IB=5.0mA 0.3 V
• Base-Emitter Saturation Voltage . VBE (sat) lc=50mA, IB=5.0mA 0.95 V
f=100MHz
Output· Capacitance Cob VcB =5V, IE=O 4 pF
f=1.0MHz
Noise Figure NF Ic= 1 OOIAA, VcE =5V 5 dB
Rs=1 KIl
f=10Hz to 15.1KHz
• Pulse Test: Pulse Widtli~3bOlAs, Duty Cycle~2%
Marking
536

SOT-23

Collector Current Ic 200. mA
Storage Temperature Tstg 150 . ·C
• Refer to MMBT3906for graphs
•
Collector-Base Breakdown Voltage BVcBo Ic=10j.lA,IE"'0 30 V

* Collector-Emitter Breakdown Voltage BVcEo Ic=1mA,IE=0 30 V
Emitter-Base Breakdown Voltage BVeeo IE=10j.lA,lc=0 4 V
* DC Current Gain hFE VCE=1V,lc=2.0mA 50 150
VCE=1V,lc=50mA 25
* Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA, IB=5.0mA 0.4 V
* Base-Emitter Saturation Voltage VBE (sat) Ic=50mA, IB=5.0mA 0.95 V
Current Gain-Bandwidth Product h Ic=10mA, VeE =20V 200 MHz
f=100MHz
Collector Base Capacitance Ccb VcB =5V, IE=O 4.5 pF
f=100t<:H:z;
Noise Figure NF Ic=100j.lA, VcE =5V 5 dB
Rs=1K!},
f=10Hz to 15.7KHz
* Pulse Test: Pulse Width~300j.ls, Duty Cycl~2%
. Marking
~
'MMBT4126 PNP EPITAXIAL
. ,
SILICON TRANSISr6R
.. .,' :.~'". " .: '

SOT-23

Collector-Emitter Voltage ' Vceo -25 V
Emitter-Base Voltage VEBIJ -4 V
Collector Current Ic' -200 mA
Storage femperature Tstg 150 ·C
Thermal Resistance Junction to Ambient Rth(j-a) 357 ·CIW

Collector-Base Breakdown Voltage BVCBO Ic= -1 OIolA, le=O -25 V

'Collector-Emitter Breakdown Voltage BVceo Ic= -1 mA, le=O -25 V
Emitter-Base Breakdewn Voltage BVEBIJ 1~=-'10/AA, Ic=O -4
Collector Cutoff Current ICBO Vcs=-20V, le=O -50 nA
Emitter Cutoff Current IEBIJ Vee=-3V, Ic=O -50 nA
• DC Current Gain hFE Vce =-1V,lc=-2mA 120 360
Vce =-1V,lc=-50mA 60
'Collector-Emitter Saturation Voltage Vce (sat) . Ic=-50mA, Is='-5mA -0.4 V
• Base-Emitter Saturation Voltage Vee (sat) Ic=-50mA,ls=.,-5mA -0.95 V
Current Gain-Bandwidth Product h Vce =-20V,lc=-10mA,f=100MHz 250 MHz
Collector Input CaPacitance Cib Vse=-O.5V, Ic=O, f=1MHz 10 pF
Collector-Base CapaCitance Ccb Vce=-5V, le=O, f=1MHz 4.5 pF
Noise Figure NF Vce=-5V, Ic=-1OOIAA, Rs=1kD 4 dB
Noise Bandwidth=10Hz to 15.7KHz
• Pulse Test: PW~300/AS, Duty Cyole:S2%
Marking
~
c8 SAMSUNG SEMICONDUCTOR'
538
SWITCHING TRANSISTOR 50T-23

•
1. Base 2. Emitter 3. Collector'
Collector-Base Breakdown Voltage BVcBO Ic= 1 OO/AA, IE=O 60 V

• Collector-Emitter Breakdown Voltage BVcEo Ic=1.0mA, 18=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE= 1 OOj.lA, Ic"=O 6 V
Base Cl!toff Current IBEV VcE =35V, VEB=0.4V 100 nA
Collector Cutoff Current ICEl< VCE=35V, VBE =O.4V 100 nA
• DC Current Gain hFE VCE = 1V, Ic=0.1 mA 20
VCE=1V,lc=1mA 40
VCE=1V,lc=10mA 80
V,cE=1V, Ic=150mA· 100 300
• Collector-Emitter Saturation Voltage VCE (sat) Ic=150mA,IB=15mA 0.4 V
Ic=500mA, IB=50mA 0.75 V
• Base-Emitter Saturation Voltage VBE (sat) Ic=150mA,IB=15mA 0.75 0.95 V
Ic=500mA, IB=50mA 1.2 V
Current Gain-Bandwidth Product h Ic=20mA, VCE = 1 OV 250 MHz
f=100MHz
Collector Base Capacitance Ccb VcB=5V, IE=O 6.5 pF
f=100KHz
Tum On Time ton Vcc=30V, VBE =2V 35 ns
Ic= 150mA, IB1 = 15mA
Tum Off Time toll Vcc=30V, Ic= 150mA 255 ns
IB1 =IB2 =15mA.
'Pulse Test: Pulse Width~300j.lS, Duty Cycle5:2%
Marking

MMBT4401 . NPN EPITAXIAL· SILICON TRANSlsmR
DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT.

1000 1000
)
- JCE'-I,~ J
VeE-l0V
100
........
50
30
" "-
10
./
'" -
10
3 5 10 30 50 100 300 500 ,000 1 10 30 50 100 300
Ie (mAl. COLLECIOR CURRENT Ie (mAl, COUEC'lOR CURRENT

BASE-EMITTER SATURATION VOLTAGE- COLLECTOR-BASE CAPACITANCE
10
= Ie lOis
10
J
JB!!~)
f 190,KHz
~
=- w .......
..
(J
z .......
...
!::
~
(J
~ I
"" l"-
r-r- VeE (sat). 8
IIIII
3 5 10 30 50 100 300 500 1000 3510 3050 100 300
Ie (mAl. COLLECIOR CURRENT Vee IVI. COLLEC:1QR.8ASE VOLTAGE
c8 SAMSUNG SEMICO~DUcroR
540
SWITCHING TRANSISTOR SOT·23

•
Collector-Base Breakdown Voltage BVcBO Ic=0.1 rnA, IE=O 40 V

• Collector-Emitter Breakdown Voltage BVcEo Ic=1.0mA, IB=O 40 V
Emitter-Base Breakdown Voltage BVEBO IE=0.1 rnA, Ic-=O 5 V
Base Cutoff Current IBEv VcE =35V, VBE =O.4V 0.1 iJA
Collector Cutoff Current ICEx VCE~35V, VSE=O.4V 0.1 iJA
DC Current Gain hFE VcE =1V,lc:=0.1mA 30
VcE =1V, Ic=1.0mA . 60
VcE =1V,lc=10mA 100·
·VcE =2V, Ic=150mA 100 300
·VcE =2V, Ic=500mA 20
• Collector-Emitter Saturation Voltage VOE (sat) Ic=150mA,ls=15mA 0.4 V
Ic=500mA, Is=50mA 0.75 ·V
• Base-Emitter Saturation Voltage VBE (sat) Ic=150mA,IB=15mA 0.75 0.95 V
Ic=500mA, Is=50mA 1.3 V
Current Gain-Bandwidth Product h Ic =20mA, VcE =10V 200 MHz
f=100MHz
I
Collector-Base CapaCitance Cob VCB =1.0V, IE=O 8.5 pF
f=140kHz
Tum On Time ton Vcc=30V, VBE=2V 35 ns
Ic=150mA,IB,=15mA
Tum Off Time tott Vcc=30V, Ic= 150mA 255 ns
Is, :"ls2 = 15mA
··Pulse Test: Pulse Widths:.300/JS, Duty Cycle~2%
Marking
41 SAMSUNG SEMICONDUCTOR 541

MM,BT4403. 'PNPEPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN
IiOO J
I~mt-VCE·_m
vee.
300 Ir-
I-'
I~ r-....
1=
8
jlO
3;
Lam.·'··"·.
1 _
3 5 10 30 50 100 300 500 1000 1~0~~02~~04~~~~~M~~I~n~~I.~2~
Ie (mAl, COUECIOR CURRENT VIE (VI,IIA8E-EMmER VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT . COLLECTOR-EMITTER SATURATION VOLTAGE
1000 10
I-- vcr-nil r- 1c.1OJa
V I\.. (sat)
V
ee(sat)
5
3
1 0,01
3 5 10 30 50 100 300 500 1000 1 3 5 10 30 50 100 300 500 1000
Ie (mAl, COI.LEC1OR,cuRRENT Ie (mA), COUECIOR CURRENT
COLLECTOR-BASE CAPACITANCE
50 1---!:!4OKH
r------"'.O
30
I·r--
~
8 5
t-
1
5 10 30 50 100
Vea (VI, COLLECIOR-IIASE VOL1lIQE .
.c8 SAUSUNG SEMiCoNDUCTOR 542

LOW NOISE TRANSISTOR 50T-23

Collector-Emitter Voltape VCEO . 50 V
. Collec::tor Dissipation Pc 350 mW
Storage Temperature Tstg 150 o.C

ELECTRICAL CHA.RACTERISTICS (Ta= 25 0 C)

I
! Collector-Base Breakdown Volt;:tge BVCBO Ic=100",A,IE=0 50 V
Collector-Emitter Breakdown Voltage BVcEo Ic=1mA, IB=O 50 V
DC Current Gain hFE VcE =5V, Ic =100",A 150 500
VcE =5V, Ic= 1 mA 150
VcE =5V,lc=10mA 150
Collector-Emitter Saturation Vollage VCE (sat) Ic=10mA,IB=1mA Q.3 V
Base-Emitter Saturation Voltage VBE (sat) Ic=10mA,IB=1mA 0.85 V
Current Gain-Bandwidth Product fr Ic =500",A. VcE =5V 40
,
MHz
f=20MHz
Output Capacitance Cob VcB =5V, IE=O 4 pF
f=100kHz
Noise Figure NF Ic= 1 OO",A, VcE =5V 3 dB
f=1KHz, Rs=3KO
Marking
c8 SAMSUNG SEMICONDUCTOR .543.

MMBT5086 . PNP EPITAXIAL SILICON TRANSISTOR

1000 100
IlOO
300
- Vee_ -~ ~T5 087
50
30
- f-Vce-5
M Br5 8 .L
L
1 0.1
0.1 CI.3 0.5 3510 30 50 100 0.2 0.4 os 1.0 1.2
• Ie (IlIA), COLLECIOR CURRENT VIE 1Vl,IIA8E-EilITTER VOLTAGE
CURRENT GAIN BANDWIDTH p~licr COLLEcroil-EMITTER SATURATION VOLTAGE
1000
I--- Vee_ I--- 1c-1P'~
V I
~ Vae sat)
t===== VeE (sat)
1 0.01
0.1 CI.3 0.5 3 . 5 10 30 50 100 0.1 0.3 0.5 3 6 10 30 60 100
Ie (IlIA), COLLECIOR CURRENT Ie (InA), COLLECTOR CURRENT
OUTPUT CAPACITANCE
12 !
r-1-1~~Z
IE_(
10
'" t-....
0
r-.
--
10 30 50 100
Vee 1Vl, COLLECIOA-BASE VOLTAGE
-c8 SAMSUNG SEMICONDUCI"OR 544

LOW NOISE TRANSISTOR SOT-23
Coliector-Base Voltage VCBO 50 V

Coliector-Emitter Voltage VCEO 50 V
Coliector Current Ic 50 mA
Coli ector Dissipation Pc 350 mW


I I
I
Coliector-Base Breakdown Voltage BVcBO Ic= 1 OO"A, IE=O 50 V
Coliector-Emitter Breakdown Voltage BVcEo Ir =1 OmA. 10=0 50 V
Coliector Cutoff Current ICBO VcB =35V, IE=O 50 nA
DC Current Gain hFE V~"=bV, I~= lUO"A 250 800
VcE =5V, Ic= 1.0mA 250
Coliector-Emitter Saturation Voltage VCE (sat) Ic=10mA, IB=1.0mA 0.3 V
Base-Emitter Saturation Voltage VBE (sat) Ic=10'mA, IB=1.0mA 0.85 V
Current Gain-Bandwidth' Product fT Ic=500"A. VCE=bV 40 MHz
f=20MHz
f=100kHz
Noise Figure NF. VcE =5V, Ic=20mA 2 dB
Rs =10K!}
f=10Hz to 15.7KHz
VcE =5V,lc=100"A 2 dB
Rs =3K!}, f= 1 KHz
Marking
545
MMBT5088, . NPN EPITAXIAL SILICON TRANSISTOR
LOW NOISE TRANSISTOR
ABSOLUTE MAXIMUM .RATINGS (Ta = 25°-C)

,
Collector-Base Voitage • VCBO 35 V
Collector. Dissipation Pc 350 mW
Storage. TemperatlMe Tstg 150 °C

! "
Collector-Base Breakdown Voltage BVcBo Ic';100!'A. IE=O 35 V

Collector-Emitter Breakdown Voltage BVCEO Ir'O=1mA.lo=0 30 V
Emitter Cutoff Current lEBO VBE=JV, Ic=U 50 nA
DC Current Gain hFE VcE =5V, Ic= 1 OO~ 300 900
VcE =5V, Ic'" 1 rnA 350
VCE=5V. Ic'" 1 OmA 300
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,IB"'1.0mA 0.5 V
Base-Emitter Saturation Voltage VBE (sat) Ic=10mA.IB=1.0mA 0.8 V
Current Gain-Bandwidth Product fT Ic"'500!,A, VcE =5V 50 MHz
f"'20MHz
Collector Base Capacitance Ccb VCB=5V. IE=Q 4 . pF
f=100kHz
Noise Figure NF Ic= 1 OO!,A, VcE =5V 3 dB
Rs= I", KII
, f"'1 OHz to 15.7KHz
Marking
c8 ~AMSUNGSEMICONDUcroR 546
MMBT5088 NPNEPITAXIAL SILICON TRANSISTOR
~~~II~';lm~'11
f- VCE=~V
~300 b~ ~ -VcE_5V
..~300
1000 1000
i 100
i-""'"
!3 50
30
,1:
~
10
1
0.1 0.3 0.5 35 10 3050 100
10 (mA), COLLECIOR CURRENT Ie (mA), COLLECTOR CURRENT
'"~
~
z
10
3
r-- Ic=101B
Il
II
5r--
OUTPUT CAPACITANCE
COLLECTOR·BASE CAPAOITANCE
r-- f-ce~ IJ1~JH~

11,,~q
C:tr;!~HZ
11
I
•
2 ,
i~
1
~ VB' (sat)
4
'1"-
OS i".
~ 0.3 i'"
£
!!I O. 1 2
"" " ........
>
f"'-.. Cob
10.05 t= VCE(sat)~
1 -
I I
J1
~ 0.03
~
> 1
0.01 1
0.1 0.3 OS 3 5 10 30 50 100 10 30 50 100 200
Ie (mI.), COLLECIOR CURRENT Yea M, COLLECIOR BASE VOLTAGE
547
MM8T5088. . NPN EPITAXIAL. SILICON TRANSISTO.R. .

1000 000
1= Vc,=5V
500
300 300
ZI00
V
3 .
iG : 50
30
H
i 10
I III III . , 11111 11111 Jill

0.1 o.s o.s 1 3 5 10 30 60 100 0.1 0.3 0.5 , 3 5 10 30 50 100
Ie (mAl. COLLECIOR CURRENT Ie (mAl, COLLl!CTOA CURRENT
NOISE FIGURE
10
VCE_SV
f.10Hz:
f---~~ ~~'\.~ \,'\.

~ \
1
\I"
1
.......... r--
t""'- i\
........
1'---,
0.1 O.3o.s 1 3510 3050 100
Ie (mAl. COLLECTOR CURRENT
'18 SA~~UNG SEMICONDUCTOR <548'

;, ~'" ~.
·,t,,:(:U~
MMBT5089 NPN , EPITAXIAL SILICON TRANSISTOR. .
LOW NOISE TRANSISTOR·

S01-23
ABSOLUTE MAXIMUM RATINGS·(Ta=25°C)

• Refer b MMBT5088 for graphs
1 Base 2 Emitter 3 Collector
Collector-Base Breakdown Voltage BVCBO Ic= 1 OO!,A, IE=O 30 V

Collector Cutoff Current ICBO VCB = 15V, IE=O 50 nA
Emitter Cutoff Current lEBO VBE =4.5V, Ic=O 100 nA
DC Current Gain hFE VcE =5V,lc=100!,A 400 1200
VCE=5V,lc=lmA 450
VcE =5V,l o=10mA 400
Base-Emitter Saturation Voltage VBE (sat) Ic=10mA.IB=1.0ruA 0.8 V
Current Gait:1-Banciwidth Product fT Ic=500!,A. Vcc=5V 50 MHz
f=20MHz
Collector Base Capacitance Ccb VcB =5.0V, IE=O 4 pF
f=100kHz
Noise Figure NF Ic=100!,A, Vc~=5V 2 dB
Rs=10K!?
f=10Hz to 15.7KHz
Marking
549
, - • ..rt, ..... "
HIGH VOLTAGE TRAN'SISTOR

SOT-23.

,
·Characteristic Sym~1 Ra.tlng Unit

Collector-Emi.tter Voltage VCEO 150 V
Collector Dissipation .. Pc 350 mW

Collector-Base Breakdown Voltage BVcBO Ic=100Io'A,IE=0 160 V

Collector-Emitter Breakdown Voltage BVcEo Ic=1.0mA,le=0 150 V
Emitter-Base Breakdown Voltage BVEeo IE= 1OIo'A, Ic=O 5 V
Collector Cutoff Current ICBO Vce=100V,IE=0 50 nA
DC Current Gain hFE VcE =5V, Ic=1.0mA 50
VcE =5V,lc=10mA 60 240
VcE =5V, Ic=50mA 50
Collector-Emitter Saturation Voltage Vcdsat) Ic=10mA, le=1 OmA 0.2 V
Ic=50mA, le= 5mA 0.5 V
Base-Emitter Saturation Voltage VBE (sat) Ic =10mA,IB=1.umA 10 V
Ic=50mA, la=5mA 1.0 V
Current Gain-Bandwidth Product IT Ic=10mA, VcE =10V 100 300 MHz
f=10DMHz
Output Capacitance Cob Vce=1DV, Ie=D 6.0 pF
f=;1.0MHz
Noise Figure NF VcE =5V, Ic=2DDIo'A 8.C dB
Rs= 100
. f= WHz to 15.7KHz
Marking
c8 SAMSUNG SEMICONDUCTOR .
5~O
~:,,:
1000 1000
500
500 f-- -V",,_5V
300 - ~VcE_5V
300
I
~
"
!Z 100
II!IE
il
8 50
i 30
10
3 5 10 30 50 100 300 500 1000 0.2 0.6 D.8 1.0 1.2
Ie (mAl, COLLECI'OR CURReNT VI! M, BASE·EMITTER VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE
10
f - - f-VCE_1OV
W 3 =-- 1-1<-10.18
,.... !g
I'-...
~ =r= Jl~"11
Ii
IE 0..5 --
ag 0..3
-
.! 0..1 V
~ ,-=t= VCE(Sat)
...:: 0..05
10..03
~
0..01
3 5 10 30 50 100 300 500 1000 3 5 10 30 50 100 300 500 1000 .
Ie (mAl, COLLECTOR CURRENT . Ie (mAl, COLLECI'OR CURReNT
OUTPUT CAPACITANCE
24
I----- ,.J.../.
IE_O
r-...
'\
1'\
1'-
5 '
'"
10
....
30 50 100
Vea M, COUECTOR BASE VOLTAGE

MMBT.S5SO· NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR SOT-23


ELECTRICAL_ CHARACTERISTICS ("Fa =25°C)
Collector-Base Breakdown Voltage BVcBO Ic= 1 O/.iA, IE=O 160 V ,

Collector-Emitter Breakdown Voltage BVcEo Ic =1mA,·IB=0 140 V
Emitter-Base Breakdown Voltage BVEBo 1.=10!,A. 1r.=0 . 6 V
Collector Cutoff Current . ICBO VCB = 1 OOV, IE=O 100 nA
Emitter Cutoff Current lEBO . V.B=4V, Ic=O 50 nA
DC Current Gain hFE VcE =5V, Ic=1.0mA 60
VcE =5V, Ic= 1 OmA 60 250
VcE=5V, Ic=50mA 20
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,IB=1mA 0.15 V
Ic=50mA, IB=5mA 0.25 V
Base-Emitter Saturation Voltage VBE (sat) Ic =10mA, IB.=1mA 1.0 V
Current Gain-Bandwidth Product h Ic=10mA, VcE =10V 100 300 MHz
f=100MHz
f=1.0MHz
Marking
552
DC CURRENT GAIN BASE·EMITTER ON VOLTAGE

1000 '000
500 - Vce_SV 500 .~ I-Yce-SY
300 300
I
0 0. I
3 31
I
1 1
3 5 10. 30 50 100 300 1000 ~ M M M W U
I, (mAl, COLLECIOR CURRENT v.. (V), BASE-EMITTER ~TAGE
CURRENT GAIN·BANDWIDTH PRODUCT COLLECTOR·EMITTER SATURATION VOLTAGE
10.
I
f-- -10.10.10
~ 3
!:l
i
z 1
'~ JJ.I(..,1
~
a
" 0..5
0..3
£- V-
10.1
ee(..,
~
..:: o.os
1003
i
0..01
3510. 3050 100 300 .....' 1000 3 5 10 30 50 100 300 500. 1000
Ie (mAl, COLLECTOR CURRENT Ie (mAl, COLLECIOR CURRENT
OUTPUT CAPACITANCE
12Ir---- J --
I--- f-1M~z
IE-O
10. - -
t---- t-.
t-J
I
~
S --
6
~.
1 " i"o..
---
...........
~r--
2 -
0. I
-+
1 10. 30 50 100
Yea (V), COI.LEClOR BASE ~LTAGE
c8 SAMSUNG SEMICONQUCTOR 553

,MMBT6427, 'NPN EPITAXIAL SILICON TRANSistOR
,DARLINGTON 'TRANSISTOR SOT-23
Collector-~e Voltage VC80 40 V

Emitter-Base Voltage VEBO ,12 V
Collector Current Ic , 500 mA
"

·\' . 'ELECTRICAL CHARACTER'ISTICS (Ta= 25 ° C)
, ~.
Collector-Base Breakdown Voltage BVcBo Ic=100!,A,IE=0 40 V

! ColI~ctor-Emitter Breakdown, Voltage BVCEO Ic= I UmA, iB=U 40 V
Emitter-Base Breakdown Voltage BVEBo IE= 1 O!,A, Ic'=O 12 V
Collector Cutoff Current ICB9 VcB=30V, IE=O 50 nA
Collector Cutoff Current ICEO VcE =25V, 'B=O 1 !,A
Emitter Cutoff Current ' lEBO VBE =10V, 10=0 50 nA
" '
DC Current Gain hFE VcE =5V, Ic=10mA 10,000 100,000
VcE =5V,lc=100mA 20,000 200,000
VcE =5V, Ic=500mA 14,000 140,000
Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA IB=0,5mA ' 1,2 V
Ic=500mA, IB=U,bmA 1,5 V
Base-Emitter Saturation Voltage VBE (sat) Ic=500mA, 'B=0.5mA 2.0 V
Base-Emitter On Voltage VBE (on) Ic=50mA, VCE=5V 1.75 V
Output Capacitance Cob> VCB = 1 OV, IE=O 7 pF
f=1MHz:
Noise Figure NF Ic=1mA, VcE =5V 10 dB
Rs=100KO
f=1KHz to 15,7KHz
Marking
.. ~

"'.
DC CURRENT GAIN CURRENT GAlN·BANDWIDTH PRODUCT

1000
1=-
-VtJ£_SV
10
3 5 10 30 50 100 ·300 500 1000 10 30 50 100
Ie (mA). COLLEcroA CURRENT Ie (mA). COLLECIOR CURRENT
BASE-EMITTER SATURATION VOLTAGE .
COLLECTOR·EMITTER SATURATION VOLTAGE BASE-EMITTER ON VOLTAGE
10 200
le- 1000iB 100
:
==LL
_f-
Vae(sat) i--
1 !
VeE (s.,)
0.1
10 30 50
II 100 300
I
o 0.2 o.s 1.0

I
1.4 1.8 2.2 2.8
Ie (mA). COI.LECIOR CURRENT VIa (VI. BASE-EMITTER VOLTAGE
·555
','
MMBT6428, NPN EPIT4XIAL SILICON TRA~SISTOR
AMPLIFIER TRANSISTo.R
SOT-23

Col.lector Dissipation Pc 350 mW'
• 'Refer to MMBT5088 for graphs
1. Base 2. Emitter 3. Collector .
ELECTRICAL CHARACTE.RISTICS (Ta= 25 ° C)
Collector-Base Breakdown Voltage BVcBO Ic=0.1 mA, 1.=0 60 V,

Collector-Emitter Breakdown Vortage BVcEO . Ic=1.0mA, IB=O 50 V
Collector Cutoff Current ICBO VCB=30V, IE=O 0.01 JJ.A
Collector Cutoff Current IcEo VCE=30V, I~=O 0.1 JJ.A
Emitter Cutoff Current lEBO . VEB=5.0V, Ic=O 0.01 JJ.A
DC Current Gain hFE VCE=5V, Ic=0.01 mA 250
VCE=5V, Ic=0.1 mA 250 650
VCE=5V, Ic=1.0mA 250
- VCE=5V,lc=10mA 250
Collector-Emitter Saturation Voltage Vcdsat) Ic= 1 OmA, IB=0.5mA 0.2 V
Ic=100mA,IB=5mA 0.6 V
Base-Emitter On Voltage VBE (on) Ic=1 mA, VcE =5V 0.56 0.66 V
Current Gain-Bandwidth Product fr Ic= 1.UlllA, Vc.=5V 100 700 MHz
f=iOOMHz
Output Capacitance . Cob VcB =10V, 1£=0 3 pF
f=1.0MHz
Marking
.~ .

MMBT6429 NP.N EPITAXIAL· SILICON TRANSISTOR
80T-23
Collector-Base Voltage VCBO' 55 V

Collector-Emitter Voltage VCEO 45 V'
Emitt~~-Base Voltage VEBO 6 V
C:ollector Current Ic 200 mA
Characteristic .

Symbol
BVcBo
Test Condition
Ic=O.l mA, IE=O

1. Base 2. Emitter 3. ColIl?ctor
Min
55
Max Unit
V
••
Collector Cutoff Current ICBO VcB=30V, IE=O 0.01 JAA
Collector Cutoff Current IcEo VcE =30V, IB=O 0.1 JAA
Emitter Cutoff Current lEBO VEB =5.0V, Ic=O 0.01 JAA
DC Current Gain hFE VcE =5V, Ic=O.Ol mA 500
VcE =5V, Ic=O.l mA 500 1250
VcE =5V, Ic=1.0mA 500
VcE =5V,lc=10mA 50d
1,,=100mA,IB=5mA 0.6 V
Base-Emitter On Voltage . VBE.(on) Ic=lmA, VcE =5V 0.56 0.66 V
Current Gain-Bandwidth Product .fr Ic=1.0mA, VcE =5V 100 700 MHz
f=100MHz
Output Capacitance Cob VcB=10V,IE=0 3 pF
f=1.0MHz
Marking

.MMBTA06,···
", .... , ' i , ,'. '"
NPN ·EPITAXIAL SILICON TRANSISTOR
DRIVER TRANSISTOR
SOT-23

Emitter-Base Voltage
Collector Current (max)
Collector Dissipation
VEBO
Ie
Pc
4
500
350.
V
mA
mW
..
Storage' Temperature Tstg 150 °C
Thermal Resistance Junction to Ambient RthU-a) 357 °CIW
• Refer to MPSA05 for graphs

ELECTRICAL CHARACTERISTICS (Ta~25°C)
* Collector-Emitter Breakdown Voltage BVcEo "'I Ic= 1 mA, 'B=O 60 V

Emitter-Base Breakdown Voltage BVEBO IE= 1 OO/AA, Ic=O 4 V
Collector Cutoff Current ICBO VcB=60V, IE=O 0.1 /AA
Collector Cutoff Current IcEo VcE =60V, IB=O 0.1 /AA
DC Current Gain hFE VcE =1V,lc ;"10mA 50
Collector-Emitter Saturation Voltage VCE (sat) Ic=100mA,IB=10mA 0.25 V
Base-Emitter On Voltage VBE (on) VcE =1V,lc=100mA 1.2 V
Current Gain-Bandwidth Product fr VCE~2V, Ic=10mA, f=100MHz 100 MHz
* Pulse Test: PW;S;300/As, Duty Cycle:S2%
Marking
c8
. '.... . . ' . .

MMBTA06 NPN EPITAXIAL SILICON TRANSISTOR
DRIVER TRANSISTOR
50T-23
ABSOLUTE MAXIMUIYI RATINGS (Ta=25°C)

Collector-Emitter Voltage . VCEO 80 V
Thermal ReSistance Junction to Ambient Rth(j al 357 °C/W
1. Base 2 EmItter 3 Collector
'Collector-Emitter Breakdown Voltage BVcEo Ic=1mA,18=0 80 V

Emitter-Base Breakdown Voltage BVEBO IE=100"A,lc=0 4 V
Collector Cutoff Current IcBO Vce=80V, IE=O 0.1 I'A
Collector Cutoff Current ICEo VcE =60V, 18=0 0. 1 I'A
DC Current Gain hFE VCE = 1V, Ic= 1 OmA 50
Collector-Emitter Saturation Voltage VCE (sat) Ic= 1 OOmA, 18= 1 OmA 0.25 V
Base-Emitter On Voltage VBE (on) VCE=1V,lc=100mA 1.2 V
Current Gain-Bandwidth Product fr VcE =2V, Ic=10mA, f=100MHz 100 MHz.
• Pulse Test P~5300I's, Duty Cycle~2%
Marking

MMBTAt3 NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON AMPLIFIER TRANSISTOR

80T-23

Collect!:lr-Emitter. Voltage VCES 30 V
Storage Temperature Tstg 150 .oC
Collector-Emitter Breakdown Voltage Ie CES Ic=100,..A, le=O 30 V

Collector Cutoff Current ICBO Vce=30V, IE:=O 100 nA
Emitter Cutoff Cur(ent lEBO VEe=10V,lc=0 100 nA
DC Current Gain hFE VcE =5V, Ic=10mA 5,000
VcE =5V,lc =100mA 10,000
Collector-Emitter Saturation Voltage VCE (sat) Ic=100mA, le=O 1mA 1.5 V
Base-Emitter On Voltage VeE Ic=100mA, VcE =5V 2.0 V
f=100MHz
Marking

MMBTA14 NPN EPITAXIAL 'SILICON TRANSISTOR
DARLINGTON AMPLIFIER TRANSISTOR

SOT·23 .

Collector· Emitter Voltage VCES 30 V
Emitter·Base Voltage VEao 10 V
Collector· Emitter Breakdown Voltage BVcEs le=100,..A, la=O 30 V

Collector Cutoff Current leBO Vca=30V, IE=O 100 nA
Emitter Cutoff Current lEaD VEa=10V, le=O 100 nA
DC Current Gain hFE VoE =5V, 10=10mA 10,000
VcE =5V, Ic=100mA 20,000
Collector· Emitter Saturation Voltage VCE (sat) Ic=100mA,la=0.1mA 1.5 V
Base·Emitter On Voltage VeE Ic=100mA, VCE=5V 2.0 V
Current Gain·Bandwidth Product 1r Ic=10mA, VcE=5V 125 MHz
f;=100MHz
Marking
c8 SAMSUNGSEMICONDUCTOR
561
GENERAL PURPOSE TRANSI~TOR

SOT-23

Emitter.-Base Voltage VEBO 4 V

Collector-Emitter Breakddwn Voltage BVcEo k=1.0mA, IB=O 40 V

Emitter-Base Breakdown Voltage BVEBo IE= 1OOIAA, Ic=O 4 V
Cdllector Cutoff. Current ICBO VcB =30V, IE=O 100 nA
DC Current Gain hFE VcE=fOV, Ic=5mA 40 400
Collector-Emitter Saturation Voltage Vc.(sat) Ic=10mA: la=1.0mA 0.25 V
Current Gain-Bandwidth Product IT Ic =50inA, VcE =10V 125 MHz
1=100MHz
Output Capacitance. Cob VCB = 1 OV, IE=O 4 pF
1=100KHz
Marking
,c8 SAMSUNG SEMICONDUCI"OR

MMBTA42 NPN EPITAXIAL S~LlCON TRANSISTOR

SOT-23

Thermal Resistance Junction to Ambient RthU-a) 357 °C/W
•
Collector-Base Breakdown Voltage BVeBO le= 1 OO",A, IE=O 300 V

'Collector-Emitter Breakdown Voltage BVeEo Ic=1mA,le=0 300 V
Emitter-Base Breakdown Voltage BVEBO IE= 1 OO",A, le=O 6 V
Collector Cutoff Current leBO Vce=200V, 'E=O 0.1 ",A
Emitter Cutoff Current lEBO VeE =6V, le=O 0.1 ",A
• DC Current Gain hFE VCE=10V,lc=1mA 25
VCE = 1 OV, Ic=30mA 40
• Collector-Emitter Saturation Voltage VeE (sat) le=20mA, le=2mA 0.5 V
• Base-Emitter Saturation Voltage VSE (sat) 'c=20mA, le=2mA 0.9 V
Current Gain-Bandwidt.h Product fr VeE =20V,.le=10mA, f=100MHz 50 MHz
Collector-Base Capacitance Ccb Vee =20V, IE=O, f=1MHz 3 pF
• Pulse Test: PW:S:300",s, Duty Cycle:S:2%
Marking

MMBTA43
? •
NPN· EPITAX'A~ SILICON TRAN,SISTOR,
HIGH VOLTAGE TRANSISTOR SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta-=25°C)
Collector-Base Volta!)e VCBO 200 V

Collector-Emitter Voltage VCEO 200. V
1. Base 2 Emitter 3 Collector

Collector-Base Breakdown Voltage BVcBO Ic= 1 OO,..A.IE=O 200 V

'Collector-Emitter Breakdown Voltage BVcEo Ic=lmA,IB=O 200 V
Emitter-Base Breakdown Voltage BVEBo IE=lQO,..A,.Jc=O 6 V
Collector Cutoff Current ICBO Vce= 160V, IE=O 100 nA
Emitter Cutoff Current lEBO VEe =4V, Ic=O 100 nA
• DC Current Gain hFE VCE=10V,lc=lmA 2S
VcE =10V,l c =10mA 40
VcE =10V,l c =30mA 40
• Collector-Emitter Saturation Voltage VCE (sat) Ic=20mA, le=2mA 0.5 V
• Base-Emitter Saturation Voltage VeE (sat) Ic=20mA, le"'2mA 0.9 V
Current Gain-Bandwidth Product fr Ic"'10mA, VcE =20V 50' MHz
f=100MHz
Collector-Base Capacitance pF
I Ccb Vca "'20V, IE"'O
f=lMHz
4
• Pulse Test: Pulse Width~300!As, Duty CycleS;2%
Marking
c8 SAMSUNG SEMICONDUCTOR .564. .1

MMBTA43 NPN EPITAXIAL SILICON TRANSIsToR
1000~~.
SOOf--VeE_
aoo
VeE_2tN
I
Ifoo~iI
8
:t------r.~__+____++_+++++_+_+__+_++++H V r\
1 10
_ _ /' '"
oI
3 5 10 30 50 100 3510 3050 100
Ie (mA), CCILLECIOR CURRENT Ie (mA~ COUECIOR CIIRIIENT
•
, COLLECTOR-EMITTER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE COLLECTOR-BASE CAPACITANCE
10 100
- I-tc_101B
II
30
= -IE-O
- '_1MHz
~ EJJ(IIII)
=====
r-.... ....
1/ ....
= ~ VeE (lid)
..........
3 5 10 30 50 100 300 0.1 o.s 0.5 35 10 3050 100

Ie (mAl, COLLECIOII~
'4 SAMSUNG SEMICONDUCTOR

"
565
.MMSTAS.5· PNP EPITAXIAL
. SILICON TRANSISfOR
. ' , . :
DRIVER TRANSISTOR
80T-23
·ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
.Characteristic Symbol Rating Unit

Storage Temperature Tstg 150 °C .
Thermal Resistance Junction to Ambient RthIJ·a) 357 °C/W
ELECTRICAL CHARACTERISTICS (Ta= 25 OC) ',; ,
·Collector-Emitter Breakdown Voltage BVcEo Ic= -1 mA, Is=O -60 V

Emitter-Base Breakdown Voltage BVEBO IE=-100,.,A, Ic=O -4 V
Collector Cutoff Current ICBO Vca=-60V, IE=O . -0.1 ,.,A
Collector Cutoff Current ICED VCE= -60V, la=O -0.1 /AA
DC Current Gain , hFE VCE=-1V, Ic=-10mA 50
VcE =-1V, Ic =-100mA 50
Collector-Emitter Saturation Voltage VCE (sat) Ic=-100mA,la=-10mA -0.25 V
Base-Emitter On Voltage VaE (on) VcE=-1V, Ic=-100mA -1.2 V
Current Gain-Bandwidth Product fr VcE =-1V, Ic=-100mA, f=100MHz 50 MHz
• PulseTest: PW5300/As, Duty Cycle.s:2%
Marking
=8
· .
SAMSUNG SEMICONDUCTOR -";',
I'"~
MMBTA56 PNP EPITAXIAL SILICON TRANSISTOR
DRIVER TRANSISTOR
SOT-23

Thermal Resistance Junction to Ambient Rth(j-a) 357 °CIW
•
Characteristic SymbOl Test Condition Min Max Unit
'CoIlector-Emitter Breakdown Voltage BVcEo Ic=-1 mA, IB=O -80 V

Emitter-Base Breakdown Voltage BVeeo IE=-100/AA,lc =0 -4 V
Collector Cutoff Current ICBO VcB=-80V, IE=O -0.1 /AA
Collector Cutoff Current ICEO VcE =-60V, IB=O . -0.1. /AA
VCE=-1V, Ic =-100mA 50
Collectl?r-Emitter Saturation Voltage VCE (sat) Ic =-100mA,IB=-10mA -0.25 V
Base-Emitter On Voltage VBE (on) VcE =-1V,lc =-100mA -1.2 V
Current Gain-aandwidth Product h VCE=-1V, Ic=-100mA, f=100MHz 50 MHz
• Pulse Test: PW5300/As, Duty Cycle~2%
Marking
qs SAMSUNG SEMICONDUCTOR 567

MI\tlBTA63 PNP EPITAXIAL SILICON' TRANSISTOR
DARLINGTON TRANSISTOR 80T-23

Collector-Emitter Voltage VeEs 30 V
Collector Current·· Ic 500 mA
1. Base 2. Emitter 3. Colleetor

Collector-Emitter Breakdown Voltage. BVcEs Ic=100"A 18=0 30 V

· Collector Cutoff Current ICBO VcB =30V, 18=0 100 nA
Emitter Cutoff Current lEBO VBE = 1OV, I~=O 100 nA
• DC .Current Gain hFE VcE =5V, Ic= 1 OmA 5,000
Vc.=5V,lc =100mA 10,000
Col/ector-Emitter Saturation Voltage VCE (sat) Ic ";'100mA,I R =0.1mA 1.5 V
Base-Emitter On Voltage VBE (on) Ic= 1 OOmA. VeE =5V 2 V
Current Gain-Bandwidth Product fr Ic=10mA, Vct =50V 125 MHz
f=100MHz
• Pulse Test: Pulse Width~300"s, Duty Cycle~2%
Marking

MMBTA63 PNP EPITAXIAL silicON TRANSISTOR

1000K
500KI-· . VCE_SV
300Kt--
1---
KF
K
I,...-
K
K
K
3 5 10 30 50 100 300 500 1000 3 5 10 30 50 100 300.500 1000
Ie (mA). COLLECI'OR CURRENT Ie (mA). COLLECI'OR CURRENT
•
BASE EMITTER ON VOLTAGE
10
I-- le-10001.
100
I- I-lIeE-5v
VE(sat)
VeE (sat) J
i
II
1
I
I
1,
3 5 10 30 50 100 300 500 1000 o 0.4 o.a 1.2 1.6 2.2 2.6
Ie (mA). COLLECI'OR CURRENT V,.(V), BASE-EMIT1EII VOLTAGE
569
MMBTA64 PNPEPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR SOT-23
Characteristic SymbOl Rating Unit

. Collector Current Ie 500 mA
Collector Dissipation. Pc 350 mW
• Refer to MMBTA63 for graphs

,"i, ELECTRICAL CHAPoACTERISTICS (Ta =25°C)
~",. ' . " ':
Collector-Emitter Breakdown Voltage BVcEs Ic= 1 OOI.lA,IB=O 30 V

Emitter Cutoff Current lEBO VBE =10V,lc=0 100 nA
• DC Current Gain hFE VcE =5V',l c =10mA 10,000
VcE =5V,lc=100mA 20,000
Collector-Emitter Saturation Voltage VCE (sat) Ic=100mA,I A=0.1mA· 1.5 V
Base-Emitter On Voltage VBE (on) Ic=100mA VeE =5V 2 V
Current Gain-Bandwidth Product h Ic=10mA, VeE =50V 125 MHz
f=100MHz
'Pulse Test: Pulse WidthS300jJs, Duly Cycle~2%
Marking ' .

I .
570
SOT-23

Collector Dissipation Pc 350' mW
Storage Temperature Tstg t50 °C

ELECTRICAL' CHARACTERISTICS (Ta ::; 25 ° C)
Collector-Emitter Breakdown Voltage BVcEo Ic= 1.0mA. Is=O 40 V

Emitter-Base Breakdown Voltage BVEBO IE= 1 OOJlA. Ic=O 4 V
Collector Cutoff Current Icso Vcs=30V. IE=O 100 nA
. DC Current Gain hFE VCE=10V.lc=5.0mA 40 400
Collector-Emitter Saturation Voltage VCE (sat) -lc=10mA.ls=1.0mA 0.25 V
Current Gain-Bandwidth Product h Ic=5.0mA. VCE = 1 OV 125 MHz
f=100MHz
Output Capacitance Cob Vcs= 1OV. IE=O 4.0 pF
f=100KHz
lIiIarking
571,
MMBTA92
-', .;,' ,."
PNP ·EPITAXIAL SILICON TRANSISTOR

50T-23
ABSOLUTE MAXIMUM RATINGS (Ta =25°C).·
Collector-Base Voltage . Vceo -300 V

Emitter-Base. Voltage VEBO -5 V
CollectOr Dissipation Pc 350 mW
Thermal Resistance Junction to Ambient Rth(j-a) 357 °CIW
• Refer to MPSA92/93 for graphs
Collector-Base Breakdown Voltage , BVCBO Ic=-100jiA, IE=O -300 V.

·CoIlector-Emitter Breakdown Voltage B\(cEo Ic=-1mA,le=0 -300 V
Emitter-Base Breakdown Voltage BVEBQ IE=-100~A, Ic=O -5 V
Collector Cutoff Current ICBO Vce =-200V, IE=O -0.25 jiA
Emitter Cutoff Current lEBO VBE =-3V, 1e=0 ( -0_1 jAA.
• DC Current Gain ~ VcE =-10V,lc =-1mA 25
. VCE =-10V, Ic=-10mA 40
VCE=-10V,lc =-30mA 25
• Collector-Emitter Saturation Voltage VCE (sat) 1e=-20mA,le=-2mA -0_5 V
• Base-Emitter Saturation Voltage VBE (sat) Ic=-20mA, le=-2mA -0.9 V
Current Gain-Bandwidth Product iT VCE =-20V, Ic =-10mA, f=100MHz 50 MHz
Collector-Base Capacitance Ccb Vce =-20V, IE=O, f=1MHz 6 pF
• Pulse Test: PW~300~, Duty Cycle~2%
. Marking
... " . ,.,
ciS
" '
572
SAMSUNG SEMICONDUCTOR

SOT-23
,characteristic Symbol Rating Unit

Collector-Emitter "voltage VCEO -200 V
Thermal Resistance Junction to Ambient Rth(J-al. 357 °C/W
• Refer to MPSA92/93 for graphs
•
ELECTRICAL CHARACTER'ISTICS (Ta =25°C)
Collector-Base Breakdown Voltage BVcBO Ic= -1 OO,..A, IE=O -200 V

'Collector-Emitter Breakdown Voltage BVcEo Ic =-1mA,IB=0 -200 V
Emitter-Base Breakdown Voltage BVEBO IE= -1 OO,..A, le=O -5 'V
,'Collector Cutoff Current leBO VcB =-160V,I E=0 -0.25 ,..A
Emitter Cutoff Current lEBO VBE = -3V, le=O -0.1 ,..A
• DO Current Gain hFE VeE =-10V,lc =-1mA 25
VcE =-10V,lc =-10mA 40
VcE =-10V,le=-30mA 25
* Collector-Emitter Saturation Voltage· VCE (sat) le=-20mA, IB=-2mA -0.5 V
• Base-Emitter Saturation Voltage VBE (sat) le=-20mA, IB=-2mA -0.9 V
Current Gain-Bandwidth Product fr VcE=-20V, le=-10mA, f=100MHz 50 ,MHz
Collector-Base CapaCitance Ccb VcB =-20V, IE=O, f=1MHz '8 pF
• Pulse Test: PW,S300,..s, Duty Cycle:!>2%
Marking
c8 SAMSUNG SEMI~ONDUCTOR 573

NPNEPITAXIAL SILICON TRANSISTOR
VHF/UHF TRANSISTOR SOT-23
. ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Emitter-BaSe Voltage VEBO 3 V
. Coliector'Dissipation Pc 350 mW
Thermal Resistance Junction to Ambient RthU·a) 357 ·CfW
• ReIer to MPSH1 0/11 lor graphs

ELECTRICAL CHARACTER,ISTICS (Ta =25°C)
Collector-Base Breakdown Voltage BVCBO Ic=100",A,IE=0 30 V

Collector-Emitter Breakdown Voltage BVeEo le= 1 mA, Is="O' 25 V
Emitter-Base Breakdown Voltage BYEso IE';'1O/AA, Ic=O 3 V
Collector Cutoff Current ICBO . Vcs=25V, IE=O 100 nA
Emitter Cutoff Current lEBO VeE =2V, 'le=O .100 nA
DC Current Gain hFE VCE=10V,lc=4mA 60
Collector-Emitter Saturation Voltage VCE(sat) Ic=4mA, le=O.4mA 0,5 V
Base-Emitter On Voltage VSE VCE=10V,lc=4mA 0.95 V
Current Gain-Bandwidth Product· h VcE=10V, Ic=4mA, 1=100MHz 650 MHz
Collector-Base Capacitance Ccb Vcs= 1 OV, 'IE=O, 1= 1 MHz 0.7 pF
COrt)mon-Base Feedback Capacitance Grb Vee = 1 OV; IE=9, 1= 1 MHz 0.65 pF
Collector Base Time Constant CC'rbb' Vee = 1 OV, Ic=4mA, f=31.8MHz 9 ps
Marking
ciS SAMSUNG SEMICOND~CTOR 5.74

MMBTH24 NPN EPITAXIAL SILICON TRANSISTOR
VHF MIXER TRANSISTOR

SOT-23

C911ector Current Ic 100 mA
Thermal Resistance Junction to Ambient Rth(j-aj 357 °C/W
• Reier to MPSH24 for graphs.
•
Collector-Base Breakdown Voltage BVcBO Ic= 1 OO,..A, IE=O 40 V

Collector-Emitter Breakdown Voltage BVcEo Ic=1mA, Is=O 30 V
Emitter-Base' Breakdown Voltage BVEBO . IE=10,..A, Ic=O 4 V
Collector Cutoff Current IcBO Vcs= 15V, IE=O 50 nA
DC Current Gain hFE VCE=10V,lc=8mA 30
• Current Gain-Bandwidth Product IT VcE =10V, Ic=8mA 400 620 MHz
1=100MHz
Collector-Base Capacitance Ccb Vcs=10V, IE=O, 1=1MHz 0.25 0.36 pF
Conversion Gain (213MHz to 45MHz) CG Ic=8mA,. Vcc=20V 19 24 dB
Oscillator Injection = 150mV
(60MHz to 45MHz) 24 29 dB
• Pulse Test: PW~300,..s, Duty Cycle~2%
Marking
c8 SAMSUNG SEMICONDUCT~R .575

MPS2222 NPN EPITAXIAL SILICON TRANSISTOR

• Collector Dissipation: Pc (max)=625mW .
ABSOLUTE MAXIMUM RATINGS (Ta ~25°C)
Collector-ease Voltage VCBO 60 V

Collector Dissipation Pc 625 mW-
Storage Temperature Tstg -55-150. °C
ELECTRICAL CHARACTER,ISTICS (Ta =25°C)

!
Characteristic ~ - Symbol Test Conditi~ns Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic =10,.A. IE =0 60 V

Collector-Emitter Breakdown Voltage BVcEo Ic=10mA.IB=0 30 -V
Emitter-Base Breakdown Voltage BVEBO IE =10,.A. Ic =0 5 V
Collector Cut-off Current lcao VCB=50V,IE=0 10 nA
DC Current Gain hFE Ic=0.1mA, VcE =10V 35
Ic =1mA, VCE =10V 50
, Ic =10mA. VCE =1OV 75
*Ic =150mA, VCE =10V 100 300
*Ic ="500mA, VeE =1OV 30
*Collector-Emitter Saturation Voltage VCE(sat) Ic=150mA,IB=15mA 0.4 V
Ic ';'500mA, IB =50mA 1.6 'if
~Base-Emitter Saturation Voltage VBE (sat) Ic =150mA,IB=15mA 1.3 V
Ic =500mA, IB =50mA 2.6 V
Output Capacitance Cob VCB=1OV,IE=O, f=1MHz 8 pF
Current Gain Bandwidth Product IT Ic=20mA, VCE =20V 250 MHz
f=100MHz
Turn On Time ton Vcc=30V, VBE=0.5V· 35 ns
Ic =150mA,IB1 =15mA
Turn Off Time toft Vcc=30V,lc=150mA 285 ns
IBI =1 B2 =15mA
* Pulse Test: Pulse Width :s 300",s. Duty Cycle:s 2%

Also available as a PN2222


1000 100o '
f-
500 r-- veE~ r-- f--VeE.2OV
300
.- ........
i I i:1 i
1 ~I ' ,
, I'
z ,
H 1\ I
!
~
i ,
i V I ~ I
!i I
,
II II' i~ '
,,
I
I
100
i I
I
;
/ I 'I
il
g 50
i 30
,
f---I-
0 10
3 5 10 30 100 300 500 1000 3 5 10 30 50 100 300 500 1000
Ie (mAl. COLLEcroR CURRENT Ie (mAl. COLLEcroR CURRENT
•
OUTPUTCAPAaTANCE
10
~~T-t
~
- t 12
,I
---=fle:'ot' ~
~ ~
J - IE'.ol 1
r- t=1M,HZ
I i I JI !ijl 10
"-
""
Va'E'(sat)
~
-----r--
i'-
- >'-'=-
1 h-~ t-....
~-- ~ ~-
~J-: ...... r---.
vce(s~
t c--- T'
,
-+,
0.01
1 1 ,:
11 Uu , I
3 5 10 30 50 100 300 500 1000 10· 30 50 100
Ie (mA)... COLLECTOR CURRENT Vea (VI. COLLECTOR-BASE VOLTAGE

MPS2222A NPN EPITAXIAL SILICON TRANSISTOR

-Coliector·Emitter Voltage: VCEO =40V TO-92
- Collector Dissipation: Pc (max)=625mW
, Characterlatlc Symbol Rating Unit
Collector-Base Voltage Veao 75 V

Collector-Emitter Voltage Vew 40 V
Storage T~mperature Tstg -55-150 °C
"Refer to MPS2222 for graphs

/
ELECTRICAL CHARACTERISTICS
, (Ta = 25°C) ,
./ Characterlatlc Symbol TeatC~ndltions Min lYP Max Unit

I
Coliector-Base'Breakdown Voltage BVeBO le=10iA,IE=0 75 V

Collector-Emitter Breakdown Voltage BVeEo le~10mA, la=O 40 V
Einitter-Base Breakdown Voltage BVEBO IE =10iA, Ie =0 6 V
Collector Cut-off Current leao Vea =60V, IE =0 0.01 iA
Emitter Cutoff Curren~ IEao VEa =3V,le=0 10 nA
DC Current Gain hFE le=O.lmA, VeE=10V 35
le=1mA, V~E=l,OV 50
le=10mA, VeE =10V 75
"Ie =150mA, VeE =lOV 100 300
"Ie =500mA, VeE =lOV 40
'Collector-Emitter Saturation Voltage VeE (sat) le=150mA,la=15mA 0.3 V
Ie =500mA, la =50mA 1 V
"Base-Emitter Saturation Voltage VaE(sat) Ie =150mA, la =15mA 0.6 1.2 V
Ie =500mA, la =50mA 2 V
Current Gain Bandwidth Product fr le=20mA, VeE=2OV 300 ',MHz
f=l00MHz
Output Capacitance Cob Vea =10V, IE =0, f=lMHz .8 pF
Turn On Time ton Vee=3OV,le=150mA 35 ns
la1 =15mA, VaE (off)=0.5V
Turn off Time toft Vcc=3OV,le=150mA 285 ns
I
la1 =la2=15mA
Noise Figure NF Ie =l00iA, VeE =lOV 4 dB
Rs:"1KO, f=1KHz
" Pulse Test: Pulse Width s 300'1.4S, Duty Cycle s 2%

Also available as a PN2222A
'c8 SA~SUNG' SEMICONDUCTOR

578
MPS2907 PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISITOR

• Collector-Emitter Voltage: Vceo =40V TO-92
Collector-Base Voltage VCBl:) SO V

Collector Dissipation Pc S25 mW
Collector-Base Breakdown Voltage BVcoo Ic ..1OpA,le.. 0 SO V

'Collector-Emitter Breakdown Voltage BVCEO Ic ..10mA,la-0 40 V
Emitter-Base Breakdown Voltage BVeBl:) IE=10pA,lc"0 5 V
Collector Cut-off Current ICBl:) Vca=5QV,IE=0 20 nA
DC Current Gain hFE Ic=0.1mA, VcE -1OV 35
Ic=1mA, VCE-1OV 50
Ic=10mA, Vce=1OV 75
·lc ... 150mA, VCE .... 1OV 100 300
·lc .. 500mA, Vce",,1OV 30
·Collector-Emitter Saturation Voltage VCE (sat) Ic=150mA,la.. 15mA 0.4 V
Ic=500mA,la=50mA 1.S V
·Base-Emitter Saturation Voltage VaE (sat) Ic=150mA,la=15mA 1.3 V
Ic ..500mA,la-50mA 2.S V
Output Capacitance Cob Vca=1OV,IE=0 8 pF
f-1MHz
·Current Gain Bandwidth Product iT Ic=50mA, VcE -2OV 200 MHz
f=100MHz
11Irn On Time ton Vcc=3OV,lo=150mA 45 ns
lal=15mA
Turn Off Time toft Vcc=6II,lc=15OmA 100 ns
lal =1B2 =15mA
• Pulse Test: Pulse Width s 3OO'j.tS, Duty Cycle s 2%

Also available as a PN2907
579
DC CURRENT GAIN CURRENT GAIN-BANDWID:rH PRODUCT

1000 1000
500 r- r- Vee • 1OV r-- r- VcE - 2OV

300
,
~ LV f\
10 0
3 5 10 30 50 100 300 500 1000 3 5 10 30 50 100 300 500 1000
Ie (mA), COLLECTOR CURRENT Ie (mA), COLLECIOR CURRENT
'COLLECTOR-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE

10
12 11 r'
r- 1C-101a lema
~
t-f.1MHz
10
,
'\
VBE(sat)=
~
I"
f /' ...... t--..,

4
VCE(sal)-
2 -
, IIII iI
3 5 10 30 50 100 300 500 1000 10 30 50 100
,Ie (mA), COLLECIOR CURRENT Vea (V), COLLECIOR-IIASE VOLTAGE

MPS2907A PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISITOR

ABSOLUTE MAXIMUM RATINGS (Ta 25°Cl =


Collector Current f Ie 600 mA
• Refer to MPS2907 for grophs

I
Characteristic Symbol Test Conditions Min l\'p Max Unit
Collector-Base Breakdown Voltage BVeBo Ie =10pA, IE =0 60 V

·Collector-Emitter Breakdown Voltage BVeEo le=10mA,la=0 60 V
Emitter-Base Breakdown Voltage BVEBO IE =10pA, Ie =0 . 5 V
Collector Cut-off Current leBO Vea =50V,IE=0 10 nA
DC Current Gain hFE le=0.1mA, VeE=10V 75
le=1mA, VeE =10V 100
le;=1OmA, VeE =10V 100
·lc =150mA, Vee=10V 100 300
·le=500mA, Vce=10V 50
·Collector-Emitter Saturation Voltage Vedsat) le=150mA,la=15mA 0.4 V
Ie =500mA, la =50mA 1.6 V
·Base-Emitter Saturation Voltage Vae (sat) le=150mA,la=15mA 1.3 V
Ie =500mA, la =50mA 2.6 V
Output Capacitance Cob Vca =10V,IE=0 8 pF
f=1MHz
·Current Gain Bandwidth Product h le=50mA, Vee=20V 200 MHz
f=100MHz
Turn On Time ton Vee=30V,le=150mA 45 ns
la1 =15mA
Turn Off Time toff Vcc=6V,le=150mA 100 ns
la1=la2=15mA
• Pulse Test: Pulse Width :$ 300'j.IS, Duty Cycle:$ 2%

Also available as a PN2907A

581
MPS3702·· PNP EPITAXIAL SILICON TRANSISTOR

/
Collector-Base Voltage . Vcoo 40 V

. Collector Current Ie 600 mA
Storage Temperature T519 -55-150 °C
Characteristic Symbol .Test Conditions Min lYP Max Unit
Collector-Base Breakdown Voltage BVeao le==100IA,le",0 40 V

'Collector-Emitter Breakdown Voltage BVeEo le=10mA,la"0 25 V
Emitter-Base Breakdown Voltage BVeso IE .. 1001A, Ie =0 5
Collector Cut-off Current leao Vea ==20V,IE=0 100 nA
Emitter Cut-off Current leBo VBE=:N, le=O 100 nA
"DC Current Gain hFE le=SOmA, Vee -5V 60 300
'Coilector-Emitter Saturation Voltage VeE (sat) Ie" SOmA, la - 5mA 0.25 V
Output Capacitance Cob Vea=1OV,le=0 12 pF
f=1MHz
Current Gain Bandwidth Product iT le=50mA, Vce -5V 100 MHz
f=20MHz
• Base-Emitter On Voltage VBe (on) Ie =50mA,. Vee =5V 0.6 1· V
" Pulse Test: Pulse Width oS 3oojolS, Duty Cyple:s 2%

582
BASE·EMITTER ON VOLTAGE DC CURRENT GAIN

300 1000, 1----" . W-tl
100
J ,
500 I VCE_SV
1= ~VCE-5V " t
300 I
I :iji:
I , ~
: .I
'
!E
~ 100
II II,!!
i3
8 f--- t ' -
i 50
30
I
I
0.2 ... ... ... 1.0 1.2
10
35103050100
3001500 1000
VIE (V), _ m E R WlLTAGE
CURRENT GAIN BANDWIDTH PRODUCT COLLECTOR·EMITTER SATURATION VOLTAGE
1000 1.0
t= r:' --
~ f--
f-- VCE'.. SV
5
3
1,·10 I, = -
-
1 Vae (sat)·
r-'
/V
--,
i\
1---
I--
I--
f-- -
' -
.1
V
oesat
I-- '
I--
3
I 1I,I
10
, 35 10 3050 100 300 500 1000 35103050 100 300
. Ie (mA), COLLECTORWRRENT Ie (mA), COLLECt'OR CURRENT
OUTPUT CAPACITANCE
. 100
50 ~f... 'MHz
_Je.O
30
............. .......
-- .......
10 30 50 100
Yea M. COLLECroA BASE VOLTAGE
583
• Collector-Emitter Voltage: Vceo =3OV TO-92
Characteristic Symbol Rating Unit.

Collector-Emitter Voltage VeEfI) 30 V
Emitter-Base Voltage V EBO 5 V
Junction Te'mperature Tj 150 °C
Storage Tllmperature, Tstg -55-150 °C
• Refer to MPS3702 for graphs

1" Emitter 2. Base 3. Collector
Collector-Base Breakdown Voltage BVeeo Ie = 100,.A, IE =0 50 V

"Collector-Emitter Breakdown Voltage BVeEo le=10mA,le=0 30 V
Emitter-Base Breakdown Voltage BVEeo IE =100,.A, Ie =0 5 V
Emitter Cut-Off Current lEBO VeE =3V, Ie =0 100 nA
Collector Cut-off Current leeo Vee =20V, IE ",0 100 nA
"DC Current Gain hFE le=50mA, VeE =5V 30 150
"Collector-Emitter Saturation Voltage Vedsat) =
Ie = 50mA, Ie 5niA 0,25 V
Output Capacitance Cob Vee =10V,IE=0 12 pF
f=lMHz
Current Gain Bandwidth Product iT le=50mA, VeE =5V 100 MHz
f=20MHz
"Base-Emitter On Voltage VeE (on) le=50mA, VeE =5V 0,6 1 V
• Pulse Test: Pulse Width s 300/-ls, Duty Cycle s 2 0,t,
584

Characteristic ~ymbol Rating Unit

Collector' Dissipation Pc 625 mW

Characteristic Symbol Test Conditions Min lYP . Max Unit
Collec!or-Base Breakdown Voltage BVe~o Ie =100!A, IE =0 50 V

'Collector-Emitter Breakdown Voltage BVcEo Ie =10mA, Ie =0 30 V
Emitter-Base Breakdown Voltage BVEeo IE =100!A, Ic =0 5 V
Emitter Cut-off Current IEeo VeE =3V,lc=0 100 nA
Collector Cut-off Current Iceo Vce=20V,IE=0 100 nA
'DC Current Gain hFE Ic =50mA, VCE=2V' 100 300
'Collector-Emitter Saturation Voltage Vcdsat) Ic =100mA, Ie =5mA 0.6 V
Output Capacitance Cob Vce =10V,IE=0 12 pF
f=1MHz
Current Gain Bandwidth Product h Ic=50mA, ¥cE=2V 100 MHz
f=20MHz.
'Base-Emitter On Voltage VeE (on) Ic=100mA, VcE =2V 0.5 1 V
• Pulse Test: Pulse Width :!i 300",s. Duty Cycle:!i 2% .
.ciS SAMSUNG SEMICONDUCTOR 585

MPS3705 , NPN EPITAXIAL SILICON TRANSISTOR
. i ,-
GENERALPURPOSETAANS~lOR
• Collector·Emltter Voltage: VCE~=30V TO-92

!=mitter-Base Voltage VeBO 5, V
Characteristic Symbol Test Conditions Min l'fp Max Unit

"Collector-Emitter Breakdown Voltage
BVCBO '
BVceo
Ic =l00pA,le=O
Ic=10mA,le=0
50
30
. V
V
Emitter Cut-off Current leBO Vee =:N, Ic =0 ' 100 nA
Collector Cut-off Current ICBO Vee =2r:N, Ie =0 100 nA
"DC Current Gain hFE Ic =50mA, Vce ='l)J 50 150
"Collector-Emitter Saturation Voijage Vce(sat) Ic=100mA,IB=5mA 0.8 V
Output CapaCitance Cob VCB=lr:N,le=O 12 pF
, f=lMHz
Current Gain Bandwidth Product fT 'Ic =50mA, Vce ='l)J 100 ,MHz
f=20MHz
"Base-Emitter On Voltage Vee (on) Ic=100mA, Vce='l)J 0.5 1 V
" PulSEl'Test: Pulse Width :5 300llS, Duty Cycle:5 2%
ciS S~MSUNG SEMICONDUCTOR 586



Storage Temperature T5tg -55-150 °C

1. Emitter 2 .. Base 3. Collector
Collector-Base Breakdown Voltage BVeBo le=100pA,IE=0 40 V

'Collector-Emitter Breakdown Voltage BVeEo Ie =10mA, Ie =0 20 V
Emitter-Base Breakdown Voltage BVEBO Ie =100pA, Ie =0 5 V
Emitter Cut-off Current leBo VBe =3V,le =0 100 nA
Collector Cut-off Current leeo VeB =20V,le=0 100 nA
'DC Current Gain hFE Ic=50mA, Vee=':N 30 600
'Collector-Emitter Saturation Voltage Vee(sat) Ie =100mA, IB =5mA \ 1 V
Output Capacitance Cob Vee=1OV,le=0 12 pF
f=1MHz
Current Gain Bandwidth Product fr le=50mA, Vee=':N 100 MHz
f=20MHz
• Base-Emitter On Voltage Vee (on) Ie =100mA, VeE =':N 0.5 1 V
• Pulse Test: Pulse Width :s 300",s, Duty Cycle:s 20tb

MPS4249 ' PNP EPITAXIAL SILICON TRANSISTOR
• Collector.Emitter Voltage: Vceo =60V TO-92
ABSOLUTE MAX~MUM RATINGS (Ta =25°C)

Collector-Emitter Voltage VCES 60 V
1. Emitter 2. Base 3. ColleCtor
Collector-Base Breakdown Voltage BVcBO Ic =10,..4, Ie =0 60 V

·Collector-Emitter Sustaining Voltage BVcEo(sus) Ic=5mA,le=0 60 V
Collector-Emitter Breakdown Voltage BVcEs Ic =10,..4, VeE =0 60 V
Emitter-Base Breakdown Voltage BVEBO Ie =10,..4, Ic =0 5 V
Collector Cut-off Current ICBO Vce =4OV, iE=o 10 nA
Emitter Cut-off Current leBO VeE=~,lc=O 20 nA
DC Current Gain hFe Ic=100,..4, Vce=5V 100 300
Ic=1mA, Vce=5V 100
Ic ';1OmA, VCE =5V 100
·Collector-Emitter Saturation Voltage Vce(sat) Ic,= 10mA, Ie = 0.5mA 0.25 V
• Base-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=0.5mA 0.9 V
Output Capacitance Cob Vce =5V, Ie =0 6 pF
1=1MHz
Noise Figure NF Ic =20/.A, VCE =5V 3 dB
Rs =10KO, 1=1 KHz
Ic =250,..4, VcE =5V 3 dB
Rs =1KO,I=1KHz
• Pulse Test: Pulse Width ~ 300j.lS, Duty Cycle ~ 2%

TO-92
• Collector-Emitter Voltage: V CEO =40V

Emitter-Base Voltage I VEBO 5 V
mw
Collector Dissipation Pc
TJ 150 °C
Junction Temperature
Tstg -55-150 °C
Storage Temperature
1 Emitter 2 Base 3 Collector
Collector-Base Breakdown Voltage BVeao Ic=10JA.IE=0 40 V

"Collector-Emitter Sustaining Voltage BVcEO(sus) Ic =5mA. IB =0 40 V
Collector-Emitter Breakdown Voltage BVcEs Ic=5mA. VBE=O 40 V
Emitter-Base Breakdown Voltage 'BVEBO IE=10JA.lc=0 5 V
Collector Cut-off Current ICBO VCB=50V.IE=0 10 nA
Emitter Cut-off Current lEBO VaE =3V. Ic =0 20 nA
DC Current Gain hFE Ic =100JA. VCE =5V 250 700
Ic=1mA. VcE =5V 250
Ic=10mA. VcE =5V 250
'Collector-Emitter Saturation Voltage Ve.{sat) Ie = 10mA. la = 0.5mA 0.25 V
"Base-Emitter Saturation Voltage VBE (sat) Ie =10mA. IB =0.5mA 0.9 V
Output Capacitance Cob VCB=5V.IE=0 6 pF
f=1MHz
Noise Figure NF Ic=20JA. VcE =5V 2 dB
Rs =10KO. f=1KHz
Ic=250JA. VcE =5V 2 dB
Rs=1KO. f=1KHz
" Pulse Test: Pulse Width ~ 300/lS. Duty Cycle ~ 2%
589
MPS4250A PNP EPITAXIAL SILICON TRANSISTOR
• Collector-Emitter Voltage: V eEO =60V TO-92


Collector-Emitter ,!oltage Vceo· 60 V
Collector Dissipation Pc mW
1. Emitter 2. Base 3. Colleclor
ELECT;'UCAL CHARACTERISTICS· (Ta 25°C) =

Collector-Base Breakdown Voltage BVCBO Ic=10pA,le=0 60 V

'Collector-Emitter Sustaining Voltage BVcEo(sus) Ic=5mA,la=0 60 V
Collector-Emitter Breakdown Voltage BVces Ic=5mA, VaE=O 60 V
Emitter-Base Breakdown Voltage BVESO IE=10pA,lc =0 5 V
Collector Cut-off Current ICBO Vca =40V,IE=0 10 nA
Emitter Cut-off Current IEao VaE =3V,lc =0 20 nA
DC Current Gain hFE Ic =100pA, VCE =5V 250 700
Collector-Emitter Saturation Voltage Vce(sat) Ic =10mA, Ie =O.5mA 0.25 V
'Base-Emitter Saturation Voltage Vae (sat). Ic=10mA,le=O.5mA 0.9 V
Output Capacitance Cob ·Vce =5V,le=0 6 pF
f=1MHz
Noise Figure NF Ic=20pA, VcE =5V 2 dB
Rs=10KIl, f=1KHz
Ic =250pA, Vce =5V 2 dB
Rs .. 1KIl, f .. 1KHz
590
MPS5172" NPN EPITAXI.AL SILICON TRANSISTOR


Emitter-Base Voltage' VEBO 5 V
Storage Temperature Tstg -55-150 OC·
• Refer to 'MPSA10 for graphs 1 Emitter 2 Base 3 Collector

Collector Cut-off Current ICBO Vce =25V,IE=0 100 nA
Collector Cut-off Current ICEs VcE =25V, VeE =0 100 nA
Emitter Cut-off Current lEBO VeE =5V, Ic =0 100 nA
'DC Current Gain hFE Ic=10mA, VCE=10V 100 500
Collector-Emitter Saturation Voltage VCE (sat) Ic=10mA,le=1mA 0.25· V
Base-Emitter Saturation Voltage VeE (sat) Ic=10mA,la=1mA 0.75 V
Current Gain Bandwidth Product fr Ic=2mA, Vce=5V 120 MHz
Base Emitter On Voltage Veidon) Ic=10mA, VcE =10V 0.5 1.2 V
" Pulse Test: Pulse Widths 3OOJAS, Duty Cycles 2%

MPS5179· ·NPN EPITAXIAL SILICON TRANSISTOR
HIGH. FREQUENCY TRANSISTOR
Collector-Base Voltage Veoo 20 V

Coilector,Emitter Voltage VeEO 12 V
Emitter-Base Voltage VEOO . 2.5 V
Collector Dissipation (Tc=25°C) Pc 300 mW
Charaeterfstlc Symbol Test Condition .Mln Max Unit
Collector Emitter Sustaining Voltage VCEO (sus) Ic=3mA, le=O 12 V

Collector Base Breakdown Voltage BVcsO · le=0.001 mA, IE=O 20 V
Emitter Base. Breakdown Voltage BVEBO IE=0.01mA, Ic=O 2.5 V
Collector Cutoff Current Icoo Vce=15V, IE=O 0.02 /AA
Vca=15V, IE=O, T.=150°C 1 /AA
DC Current Gain hFE VcE=1V, Ic=3mA 25 250 ..
Collector-Emitter Saturation Voltage VCE (sat) le=-10mA, Ie=-1 mA 0.4 V
Base-Emitter Saturation Voltage VeE (sat) Ic=-10mA,le=1mA 1 V
Current Gain Bandwidth Product h· VCE=-6V, Ic=-5rnA, f=- 1 OOMHz 900 2000 MHz
Collector Base Capacitance Ccb Vce=-10V, IE=-O, 1=0.1 to 1 MHz 1 pF
Small Signal Current Gain hfe VcE=-6V, Ic=-2mA, f= 1 KHz 25 300
Collector Base Time Constant Cc·rbb Vce=-6V, IE=-2mA, f=31.9MHz 3 14 ps
Noise Figure NF VcE =-6V, Ic=-1.5mA, f=200MHz 4.5 dB
Rs=500
Common Emitter Amplifier Power·Gain Gpe VcE=6V, Ic=-5mA, f=-200MHz . 15 dB

• Collector·Emitter Voltage: VCEO =30V TO·92

Collector·Base Voltage VCBO 40 V
Emitter·Base Voltage VEao 4 V
Collector-Emitter Breakdown Voltage BVcEo Ic=500,.,A,la=O 30 V

Emitter-Base Breakdown Voltage BVEBO IE =10,.,A, Ic =0 4 V
Collector Cut·off Current ICBO Vca =30V, IE =0 50 nA
DC Current Gain hFE Ic=2mA, VCE=10V 90 180
*Ic =100mA, VCE =10V 60
Collector-Emitter Saturation Voltage VCE (sat) Ic=50mA,la=5mA 0.5 V
Output Capacitance Cob Vca =10V,IE=0 3.5 pF
f=100KHz
·Pulse Test: Pulse Width,;; 30qj.lS, Duty Cycle,;; 2%

• Coliector·Emitter Voltage: V~e~ =40V TO-92
Collector-Emitter Voltage V~eo 40 V

Collector Dissipation Pe 625 ,mW
Storage Temperature Tstg -55-150 ' °C

[::'
ELECTRIcAL CHARACTE,RISTICS '(Ta 25°C) =

Characteristic Symbol Test Conditions Min Typ Max . Unit
CoNector-Emitter Breakdown Voltage BVeeo le=500pA,la=0 40 ,V

Emitter-Base Breakdown Voltage 'BVeso le=10pA,le =0 4 ,V
Coliector Cut-off Current leao Vea =30V, Ie =0 50 riA
DC Current Gain hFE le=2mA, Vee=10V 90 180
-Ie =100mA, Vee =10V 60
COllector-Emitter Saturation voltage Vee (sat) Ie =50mA, la =5mA 0.5 V
Output Capacitance Cob Vea =10V, Ie =0 3.5 pF
f=100KHz
-Pulse Test: Pulse Width:s 3001-ls, Duty Cycle:s 2%
c8,SAMSUNG SEMICONDUCTOR' p94

ABSOLUTE MAXIMUM RATINGS (Ta =250(;)
Characteristic Symbol I Rating Unit

I
Collector-Base Voltage ,vCBO 40 V

Collector Current Ic. 100 mA
Storage Tem.perature Tstg -55-150 °C
• Reier to 2N3904 lor graphs

ELECTRICAL CHARACTERISTICS (T8 25°C) =

Characteristic Symbol Test Conditions Min 1YP Max Unit
Collector-Emitter Breakdown Voltage BVcEo Ic=0.5mA,le=0 25

I V
Emitter-Base Breakdown Voltage BVEeo IE =10pA, Ic =0 4 V
Collector Cut-off Current Iceo Vce =30V, IE =0' 50 nA
Vce =20V, IE =0 50 nA
DC Current Gain hFE Ic =100pA, VCE =10V 100
Ic=2mA, VcE =10V 200 400
Coilector-Emitter Saturation Voltage VCE (sat) Ic =50mA,le=5mA 0.5 V
Output Capacitance Cob Vce =10V, Ie =0 3.5 pF
1.. 100KHz
Noise Figure NF Ic =10pA, Vce=5V 3 dB
Rs .. 10KO
1.. 10Hz to 10KHz
c8 SAMSUNG SEMICONDUctoR 595

M.P~6~21··· NPN EPITAXIAL SILICON TRANSISTOR'
. ABSOLUTE MAXIMUM RATINGS (Ta 25°C) =


* Refer to 2N3904 for graphs 1. Emitter 2. Base 3. Collector

Characteristic Symbol Test Conditions Min 1'yp Max Unit
Collector-Emitter Breakdown Voltage BVcEo Ic ",0.5mA,la=0 25 V

Emitter-Base Breakdown Voltage BVEBo Ie =10pA, Ic =0 4 V
Collector Cut-oil Current ICBO Vca =30V,IE=O 50 nA
Vca=20V,IE=0 50 nA
DC Current Gain hFE Ic =100pA, VcE =10V 150
Ic=.2mA, VcE =10V .300 600
Collector-Emitter Saturatior:1 Voltage Vcdsat) Ic",50mA,la=5mA 0.5 V
Output Capacitance ' Cob V ca ",10V,l e =0 3.5 pF
!=100KHz
Noise Figure NF Ic=10pA, VcE =5V 3 dB
Rs =10KO
!=10Hz to 10KHz
C8S~MSUN~ ~EMICONDUcrOR 596


•
Collector-Emitter Breakdown Voltage BVcEo Ic=0.5mA,ls=0 25 V

Emitter-Base Breakdown Voltag~ BVEBO IE =10pA, Ic =0 4 V
Collector Cut-off Current Icso Vcs=30V,IE=0 50 nA
Vcs=20V,IE=0 50 nA
DC Current Gain hFE Ic =100pA, VcE =1OV 100
Ic=2mA, VCE=10V 200 400
Collector-Emitte~
Saturation Voltage VCE (sat) Ic =50mA, I. =5mA 0.5 V
Output Capacitance Cob Vcs =10V,I E=0, f=100KHz 3.5 pF
Noise Figure NF Ic =10pA, VcE =5V 3 dB
Rs =10KO ,
f=10Hz to 10KHz

• Coliector·Emitter Voltage: VCEO =25V TO-92

Coliector·Base Voltage Vceo 25 V

Coliector·Emitter Voltage Vceo 25 V
Emitter·Base Voltage Veeo 4 V

ELECTRICAL .CHARACTERISTICS (Ta 25°C) =

Coliector·Emitter Breakdown Voltage BVceo Ic =0.5mA, Ie =0 25 V

Emitter·Base Breakdown Voltage BVeBO le=10pA,lc=0 4 V
Collector Cut·off Current Iceo Vce=30V,le=0 50 nA
Vce=20V,le=0 50 nA
DC Current Gain hFe Ic=100pA, Vce=10V 150
Ic=2mA, VCE=10V 300 ...s00
Coliector·Emitter Saturation Voltage VCE(sat) Ic =50mA, -Ie =5mA 0.5 V
Output Capacitance Cob Vce=10V,le-0 3.5 pF
f,;,1OOKHz
Noise Figure ' NF Ic -10pA, VeE =5V 3 dB
Rs=10KO
1.. 10Hz to 10KHz

. MPS6560 NPN EPITAXIAL SILICON TRt~NSISTOR
---------------------------~,------------------------------------------~-
AUDIO TRANSISTOR
TO-92
• Collector-Emitter Voltage: VCEO =25V

Emitter-Base Voltage VEeo 5' V
Collector Curren~ Ic 500 rnA
•
1 Emitter 2 Base 3 Collector
'Collector-Emitter Breakdown Voltage BVCEO Ic =10mA, Ie =0 25 V

Collector-Base Breakdown Voltage BVceo Ic =100,.A,IE=0 25 V
Emitter-Base Breakdown Voltage BVEeo IE=100,.A,lc=0 5 V
Collector Cut-off Current ICEO VcE =25V,le=0 100 nA
. Collector Cut-off Current Iceo Vce =20V,IE=0 100 nA
Emitter Cut-off Current IEeo VEe=4V,lc=0 100 nA
'DC Durrent Gain hFE Ic= 10mA, VCE= 1V 35
Ic=100mA, VcE =1V 50
Ic=500mA, VcE =1V 50 .. 200
'Collector-Emitter Saturation Voltage VCE (sat) Ic =500mA, Ie =50mA 0.5 V
Current Gain Bandwidth Product fr Ic =10mA, VCE =1OV 60 MHz
f=30MHz
'Base-Emitter On Voltage VeE (on) Ic=500mA, VcE =1V 1.2. V
Output Capacitance Gob Vce =10V, IE =0 30 pF
- f=100KHz
, Pulse Test: Pulse Width s300/AS, Duty Cycle s2%
599
AUDIO TRANSISTOR
• Collector·Emitter Voltage: Vceo.=25V , TO-92
• Complement to MPS6560


Sto'rage Temperature Tstg -55-150 °C
ELECJRICAL CHARACTERISTICS (Ta=25°C)
"Collector-Emitter Breakdown Voltage BVcEO Ic=10mA,le=0 25 V

Collector-Base BreakdOwn Voltage BVceo Ic :=100pA, le =0 25 V
Emitter-Base Breakdown Voltage BVeeo Ie =100pA, Ic =0 5 V
Collector Cut-off Current ICEO Vce=25V,le=0 100 nA
Collector Cut-off Current Iceo Vce =20V, Ie =0· 100 nA
Emitter Cut-off Current leBO VEe =4V, Ic =0 100 nA
"DC Durrent Gain hFE Ic=10mA, Vce=1V 35
Ic=100mA, Vce=1V 50
Ic=500mA, Vce=1V 50 200
"Collector-Emitter Saturation Voltage Vce (sat) Ic =500mA, Ie =50mA 0.5 V
Current Gain Bandwidth Product IT Ic =10mA, Vce =10V . 60 MHz
f=30MHz
"Base-Emitter On Voltage
Output CapaCitance
Vee (on)
Cob
Ic =500mA, Vce=1V
Vce =1OV, Ie =0
. -
1.2
30
V
pF
f=100KHz
" Pulse Test: Width s 300/oiS, Duty Cycle s 2%
c8 SAMSUNG SEMICONDUcrOR 600

AMPLlFIER TRANSISTOR
• Collector·Emitter Voltage: VCEO =25V TO-92
ABSOLUTE MAXIMUM .RATINGS (Ta =25°C)

•
Unit
Characteristic
. Symbol Test Conditions Min lYP Max
Collector-Emitter Breakdown Voltage BVcEO Ic =1mA, Ie =0 25 V

Collector-Base Breakdown Voltage BVcao Ic =100pA, IE =0 25 V
Emitter Base Breakdown Voltage BVEBO . IE=10pA,lc =0 4 V
Collector Cut-off Current Iceo Vce =25V, Ie =0 100 nA
Collector Cut-oft Current ICBO Vce=25V,le=0 100 nA
DC Current Gain hFe Ic=1oomA, VcE =1V 50
Ic =500mA, Vce=1V 50
Ic=1000mA, Vce=1V 30
Collector-Emitter Saturation Voltage VeE (sat) Ic=1000mA, le=100m~ 0.6 V
f=30MHz
Output Capacitance Cob Vce=1OV,le=0 30 pF
f;=100KHz

601
MPS6601' 'NPN EPITAXIAL SILICON TRANSISTOR
DC CURRE!'fT GAIN CURRENT GAlN-BANDWIDTK PRODUcr

1000 1000
500 f - - VCE-1V f--;- r-YcE.1OV

300
,
/~
II 10
30 50 100 300\500 1000
3 5 10 30 50 100 300 500 1000 3 5 10
Ie (mA), COLLECIQII CURRENT Ie (mA), COLLECIOR CU~
BASHMITTER SATURATION VOLTAGE
COLLEcrDR-EMmER SATURATION VOLTAGE OUTPUT CAPACITANCE
10
- to_lOla
50 _~E-O
f_100KHz
30
-
VBE(s8t)
r-:-
Veo(...)
CID1
I iI 1
3 5 10 30 50 100 300 1000 10 30 50 100
Ie (mA), CoLLECIOR CURRENT Yea (V), COLLECIOR.8ASE IIOLTAGE
c8 SAMSUNG'SEMICONDUCTOR 602
1MPS6602 NPN EPITAXIAL SILICON TRANSISTOR

•
• Refer to MPS6601 for graphs
Collector-Emitter Breakdown Voltage BVceo Ic=1mA,la=0 40 V

Collector-Base Breakdown Voltage BVcao Ic=100~, le=O 40 V
Emitter-Base Breakdown Voltage BVeao le=10iA,lc=0 4 V
Collector Cut-off Current Iceo Vce =30V,la=0 100 nA
Collector Cut-off Current Icao Vca=30V,le=0 100 nA
DC Durrent Gain hFe Ic=100mA, Vce=1V 50 .
Ic =5OOmA, Vce=1V 50
Ic=1000mA, Vce=1V 30
Collector-Emitter Saturation Voltage Vedsat) Ie =1000mA,la =100mA 0.6 V
f=30MHz
Output Capacitance Cob Vca=10V,le=0 30 pF
f=100KHz

TO-92
• COllecto....EmltterVOltage: Vceo=25V

.Collector-Emitter Breakdown Voltage .BVcEO Ie =1mA, Ie =0 25 V

Collector-Base Breakdown Voltage BVcBO Ic =1oopA, Ie =0 25 V
Emitter-Base Breakdown Voltage BVeBO Ie =10pA, Ic =0 4 V
Collector Cut-off Current Iceo
Vce=25V,le=0 100 nA
Collector Cut-off Current Iceo
Vce =25V,l e =0 100 nA
DC Current Gain hFE Ic=1oomA, Vce=1V 50
Ie =500mA, Vee =1V 50
le=1A, Vee=1V 30
Collector-Emitter Saturation Voltage Vce(sat) le= 1A,le= 100mA 0.6 V
Output Capacitance Cob Vee=1OV,le=0 30 pF
f=1ooKHz
Base-Emitter On Voltage Vee (on) Ie =500mA, Vee =1V 1.2 V
Current Gain Bandwidth Product fy Ie =50mA, Vee =1OV 100 MHz
f=30MHz
Turn On Time ton Vcc=40V,le=5OOmA 55 ns
le1=50mA
Turn Off Time toll Vec=4OV,le=5OOmA 300 ns
le1=50mA
604
:P-t--t-t--t
10,000 100001
500 01
VCE-1V VCE-1~~-t-
3000
f----j i 01
I i
r------- ,
I
1--;""
L--- ~
50
30
II
10
I ii 10 1
10 30 50 100 300 500 1000 10 30 50 100 300 500 1000
•
COLLECTOR..EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE
BASE. EMITTER SATURATION VOLTAGE
1
Vee (sat
100
JI
f--- -;.,00KHz
f- f-«: .10'.
eo
w
U
z
Vce(sat)
V ... i! eo
~
1
c5
rf
So 40 \
8 \
-
........
r-.....
2()
r-
0.01 o
3 5 10 30 50· 100 300 500 1000 o 10 15 2() 25
'e (mA), COLLECTOR CURRENT 'Ice (V), COLLECTOR BASE VOLTAGE
cS2 SAMSUNG SEMICONDUCTOR

""
MPS8097 ' NPN EPITAXIAL SILICON TRANSISTOR
• Collector-Emitter Voltage: VCEO =40V T0.:92
ABSOLUTE MAXIMUM RATINGS (Til =25°C)

, Reier to 2N5088 lor graphs

Characteristic Symbol Test Conditions Min '1\'p . Max Unit
'Collector-Emitter Breakdown Voltage 'BVCEo Ic=lOmA,le=O 40 V

CollectOr Cut-off Current 'ICBO Vee .. 4OV,IE~O '30 nA
Vee-SOV,IE=O 10 nA
Emitter Cut-oll Current lEBO Vee ,,:,SV, Ie =0 20 nA
'DC Current Gain hFE Ic=100pA, VCE '-5V 250 700
Output Capacitance Cob Vee =5V, IE =0 1 4 pF
l=lMHz
'Base-Emitter On Voltage VeE (on) lo=loopA, Vce -5V 0.45 0.65 V
Noise Figure NF lo=.loopA, V'ce=5V 2 dB
Rs -10KO, 1=10Hz
'Pulse Test: Pulse Width~300jAS.Duty Cycle~2%
606
• Coliector-EmIHerVoltage: Vceo =60V TO-92

Collector Current ' Ie 500 mA
•
,ELECfRICAL CHARACfERISTICS (T a =25°C)
Collector-Base Breakdown Voltage BVcBO le=100pA,IE=0 60 V

'Collector-Emitter Breakdown Voltage BVeEo le=10mA,l e ",0 60 V
Emitter-Base Breakdown Voltage BVEBO IE=10pA,lc =0 6 V
Collector Cut-off Current ICEo VeE =60V,le=0 100 nA
Collector Cut-off Current IcBO VCB =60V, IE =0 100 nA
Emitter Cut-off Current lEBO VEe =6V, Ic =0 100 nA
'DC Current Gain hFE Ic=1mA, VcE =5V 100 300
Ic=10mA, VeE=5V 100
Ic=100mA, VCE=5V 75
'Collector-Emitter Saturatio'n Voltage VCE (sat) Ic =100mA, Ie =5mA 0.4 V
Output CapaCitance Cob VCB =5V, IE =0 6 pF
f=1MHz
Current Gain Bandwidth Product fT Ic=10mA, Vce=5V 150 MHz
f=100MHz
'Base-Emitter On Voltage VeE (on) Ie =1mA, VeE =5V 0.5 0.7 V
, Pulse Test: Pulse Width:s 300,..s, Duty Cycle:s 2%
607
-, "
. '
;\
1000 1000
Vee_ V
500 500 I-- _ vce-SV,
-
r- V~
~
I-
30
10
0.1 G.3 0 5 ' 3 5 10 30 50 100
10
.1 3
1 5 10 30 50 100
Iii'
300 ~
I
1000
Ie (mAl. COLLECIOR CURRENT Ie (mAl. COLLECIOR CURRENT
BASE·EMITTER SATURATION VOLTAGE , OUTPUT CAPACITANCE
0 2
IIIII
51-- Ic",101s
10 I-- rJ.lJ II
f=1MHz
3'
'1== .1L(s"l 8
V
1 r-..
~ Vce(sat)
f".
OD!
1 3 5 10 30 50 100 300 500 1000 0.1 0.3 0.5 1 3 5 10 30 50 100
Ie (mAl. COLLECIOR CURRENT Yea M. COLLECTOR.BASE VOLTAGE
c8 SAMSUNG SEMIcONDUCTOR 608

MPS8099 NPN EPITAXIAL SILI~ON TRANSISTOR
• Collector-Emitter Voltage: VcEo =80V '1"0-92

•
• Refer to MPS8098 for graphs.
'Collector-Emitter Breakdown Voltage BVcEo Ic =10mA, Ie =0 80 V

Collector-B,ase Breakdown Voltage BVCBO Ic =100pA, IE =0 80 V
Emitter-Base Breakdown Voltage BVEBO IE =10pA, Ic =0 6 V
Collector Cut-off Current ICEo VcE =60V,le=0 100 nA
Collector Cut-off Current Iceo Vce =80V,IE=0 100 nA
Emitter Cut-off Current IEeo VeE =6V,lc =0 100 nA
• DC Current Gain hFE Ic=1mA, VcE =5V 100 300
'Collector-Emitter Saturation Voltage VCE (sat) Ic =100mA, Ie =5mA 0.4 V
'Base-Emitter On Voltage VBE (on) Ic=10mA, VcE =5V 0.6 0.8 V
Current Gain Bandwidth Product fr Ic =10mA,VcE =5V 150 MHz
f=100MHz
Output Capacitance Cob VCB =5V, IE =0 6 pF
f=1MHz
, Pulse Test: Pulse Width :s 300",s, Duty Cycle:s 2%
. c8 SAMSUNG SEMICONDUCTOR 609

.M"PS8598 PNP EPITAXIAL SILICON TRANSISTOR·
Collector-Base VOltage VCBO 60 V

Emitter-Base Voltage VEao 5 .V
Junction Temperature TJ 150 OC·
1. Emitter 2. Bas~ 3 Collector
Characteristic

Symbol
BVcEo
.
Test Conditions
Ic=10mA.la=0
Min
60
Typ Max Unit
V
Collector-Base Breakdown Voltage . BVcBO Ic=;100"A.IE=0 60 V
Emitter-Base Breakdcwn Voltage BVEBO IE = 10"A. Ic =.0 5 V
Collector Cut-off Current ICEO VCE=60V.la=O 100 nA
Collector Cut-off Current IcBO Vca=60V.IE=0 100 nA
Emitter Cut-off Current leao VaE=4V.lc=0 100 nA
, DC Current Gain hFE Ic=1mA. VcE '=5V, 100 300
) Ic=10mA. VcE =5V 100
Ic =100mA. VcE =5V 75
'Collector-Emitter Saturation Voltage . Vce(sat) Ic=100mA.la=5mA 0.4 V
Ic =100mA. la =10mA 0.3 V
'Base-Emitter On Voltage Vae(on) Ic=1 mAo VcE =5V 0.5 0.7 V
Current Gain Bandwidth Product fr Ic=10mA.VcE =5V 150 MHz
f=100MHz
Output Capacitance Cob Vca=5V.le=0 8 pF
f=1MHz
• Pulse Test: Pulse Width !S 300ils. Duty Cycle!S 2 0Al
c8'SAM~UNG SEMICONDUCTOR 610

DC CURRENT GAIN , CURRENT GAIN BANDWIDTH PRODUCT
1000 _ _
1000 -- -
t---i---r --
sooEEffiv r---- VCE ... 5V
t-----T -- r-
~
--
~ ~
--
-~ -
--
===
i11oo~~ttI~~!I~~1I
l-
i
r=~+--H++H-H--+--H++H+t-+-t++H+H
50
~~-+-~H4~~~~H4~~-+--H++~
==:::-c
, - - - --
--
I f
1 I I III I
10 30 100 ~ 1000 10 ~ 50 100
Ie (mA), COLLEcroR CURRENT Ie (mA). COLLEcroR CURRENT
COLLECTOR EMITTER SATURATION VOLTAGE
•
10 100
I-- t-lc-l0Ie 50 I-- I-le_O

3 I-- t-- f=1MHz
~
I-- Vse(sat
V 5
1
Vc_(...}
~
I'
1 111111 1
1- 3 5 10 30 50 100 '300 500 1000 0.1 3 5 10 ~50_100
Ie (mA), COLLEcroR CURRENT Yea (V), COLLECIOR BASE CAPACITANCE'

MPS8599 PNPEPITAXIAL SILICON TRANSISTO.FI
• Coliector·Eminer Voltage: Vceo =80V TO-92
. • Collector Dissipation: Pc (max)=625mW

Coliector·Emitter Voltage . VCEO ·80 V
Junction T\!mperature Tj 150 °C
Storage Temperature. TStg -55-150 °C
• Refer to MPS859S for graphs

Characteristic Symbol. Test Conditions Min Typ Max Unit

..
"Collector-Emitter Breakdown Voltage BVCEO Ic=10mA,IB=0· so· V
Collector-Base Breakdown Voltage BVCBO Ic=100pA,I.=0 so V
Emitter·Base Breakdown Voltage BVEBo IE=10pA,lc=0 ·5 'It
Collector Cut-off Current ICEo VcE =60V,IB=0 100 nA
.Collector Cut-off Current ICBO VCB=80V, 1.=0 100 nA
Emitter Cut-off Current lEBO VBE =4\{, Ic =0 100 nA
"DC Current Gain hFE Ic ",1mA, VcE =5V 100 300
. Ic=100mA, Vc.=5V 75
"Collector-Emitter Saturation Voltage VCE (sat) Ic =1oomA,IB=5mA 0.4 V
Ic =1oomA,IB=10mA 0.3 V
"Base-Emitter On Voltage VBE (on) Ic=10mA, VCE=5V 0.6 . O.S V
Current Gain Bandwidth Product iT Ic=10mA, VCE=5V 150 MHz
f=100MHz
Output Capacitance Cob VcB =5V,IE=0 S pF
f=1MHz
• Pulse Test: Pulse Width:s 300fAS. Duty Cycle:s 2%
c8 .SAMSUNG SEMI~ONDUcroR
MPSA05 NPN EPITAXIAL SILICON TRANSISTOR

1 Emitter 2 . Base 3. Collector
'Collector-Emitter Breakdown Voltage BVcEO Ic=1mA,le=0 .60 V

. Collector Cut-off Current Iceo Vce=60V,le=0 100 nA
Collector Cut-off Current Iceo Vce=6OV,le=O '100 nA
DC Cl:Irrent Gain hFe Ic=10mA, Vce=1V 50
Ic=100mA, Vce=1V 50
Collector-Emitter Saturation Voltage Vce (set) Ic =100mA, Ie =10mA 0.25 V
Current Gain Bandwidth Product h Ic=10mA, Vce=2V 100 MHz
f=100MHz
Base-Emitter On Voltage Vee (on) Ic=100mA, Vce=1V 1.2 V
• Pulse Test: Pulse Width s 300j.lS, Duty Cycle s 2%
613
MPSAOS','
'''1;:
,NPNEPITAXIAL SILICON TRANSISTOR:
DC CURRENT GAIN BASE·EMITTER ON VOLTAGE

" ,
1000~1mD.
5OO~'1 f-- .yo .w
I
II
1
J.:'-'-LLJ
10 '---'-..L3-'-:'5.LJ.i.L1'-0--'-30.J....L.50 ' -.......
100 300'::-'::500':'-':1O':':OO
0.2 0.4 1.0 1.2
Ie (mA), cou.ECIOR CURRENT 'V. (V), BASE-&MITTER VOLTAGE

, ,COLLECTOR-EMiTTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT BASE·EMITTER SATURATION VOLTAGE '
10 I
I-- IC.1~~
.. (Bat)
CE(",")
3 5 10 3050 100 300500 1000

Ie (mA), COLLECI'OR CUR.w.T Ie (mA), COLLECIOR CURRENT
c8 SAMSUNG SEMICONDUCTOR 6,14

• CollectQr.EmitterVoltage: Vceo"l80V TO-92

Collector-Emitter Voltage Vcw 80 V
•

!
Characteristic Symbol Test Ccmdltions Min lYP Max Unit
• Coliector-emitterlBreakdown Voltage BVeeo Ic=1mA,ls=0 80 V

Emitter-Base Breakdown Voltage BVeeo le=10QpA,lc=0 4 V
Collector Cut-off Current Icw VCE =60V, Is =0 100 riA
Collector Cut-off Current Iceo Vcs=8OV,le=O 100 nA
DC Current Gain hFe Ic=10mA, Vce=1V 50
.lc=100mA, Vce=1V 50
Collector-Emitter Saturation Voltage Vee (sat) Ic =100mA, Is =10mA 0.25 V
Current Gain Bandwidth Product iT Ic=10mA, Vce=2V 100 MHz
f=100MHz
Base-Emitter On Voltage VSE(on) Ic=1oomA, Vee=1V 1.2 V
•. Pulse Test: Pulse Width s 300/lS, Duty Cycle s 2%.
.6'15
MPSA10 .NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR TO-92

• Collector-Emitter Voltage: Vceo =40V
• Collecto.r Dissipation: Pc (max)=625mW
Collector-Emitter Voltage . Vceo 40 V

Emitter-Base Voltage . VEOO 4 V
Junction Temperatur~ TJ 150 °C
1. Emitter 2. Base 3. Col/ector

Characteristic . Symbol Test Conditions Min Typ Max Unit

. Emitter-Base Breakdown Voltage BVEBO IE =100pA, Ic =0 4 V
DC Current Gain hFe ic=5mA, VCE=10V .40 400
Current Gain Bandwidth Product h Ic=5mA, Vce=10V 125 MHz
f=100MHz
OutPUt Capacitance Cob Vce =10V, I~=O 4 pF
f=100KHz
616
MPSA10 PNP EPITAXIAL SILICON TRANSISTOR
•
DC-CURRENT GAIN CURRENT GAIN-BANDWIDTH
1000 1000
500
500 Vce_1OV
g 300
300
~ miJt~~
~
1
il
g
1
100
50
30
"'~
F
..l5
5
10
r--- VCE"",,5V
{
.t:
10
3 5 10 30 50 100 300 500 1000 0.1 0.3 0.5 3 5 10 30 50 100.
BASE-EMITTER SATURATION VOLTAGE . OUTPUTCAPAaTANCE
0
.. II I!
IE.d III
3 51- f .. 100KHz
1 V8E(sat)
1\
V
1
ce(sat)
b
5
3
0.01
3 10 30 100 300 500 1000 3 5 10 30 50 100 300 500 1000
Ie (mAl. COLLECItlR CURRENT Vea (V), COLLECTOR~BASE VOLTAGE
I~rl~ 1001'"""'''''''''
MPSA12-' ,"',' ",' ,JSILICON DARLINGTON TRANSISTOR
DARLINGTON TRANSISTOR TO-92

• Collector-Emitter Voltage: VCES =2OV
Collector-Emitter Voltage "ICES 20 V

Collector Dissipation ' Pc 625 rWN
Storage Temperatura lStg -55-150 °C

Characterlst,c Symbol Test Conditions Min 1\'p Max Unit
Collector-Emitter Breakdown Voltage BVcES 'lc .. l00pA,IB=O 20 V

Collector Cut-off Current lceo VCB =15V,IE=0 100 nA
Collector Cut-off Current ICES , VCE =15V,IB=0 100 nA
Emitter Cutoff Cur.rent lEBO VBE=10V,lc =0 100 nA
DC Cur/'Wlt Gain hFE Ic=10mA, VCE=5V 20K
Collector-Emitter Saturation Voltage VCE (sat) Ic .. 1O!TIA,IB=O.o1m,A 1 V
Base-Emitter On Voltage VBE(on) Ic=10mA, VCE=5V 1.4 V
'c8 SAMSUNG SEMICONDUCroR 618

NPN EPITAXIAL
MPSA13 SILICON DARLINGTON TRANSISTOR
• Collector-Emitter Voltage: VeES =30V TO-92

Emitter-Base Voltage V EEO 10 V

1 .. Emitter 2. Base 3. Collector

"
Collector-Emitter Breakdown Voltage BVcEs Ic=100pA,la=0 30 V

Collector Cut-off Current Icao Vce =30V, IE =0 100 nA
Emitter Cut-off Current lEBO VaE =10V,lc =0 100 nA
"DC Current Gain .hFE Ic=10mA, VcE =5V 5K
Ic= 100mA, VcE =5V 10K
"Collector-Emitter Saturation Voltage VCE (sat) Ic=100mA,la=0.1mA 1.5 V
Current Gain-Bandwidth Product IT Ic =10mA, VcE =5V 125 MHz
f= 100MHz
"Base-Emitter On Voltage VeE (on) Ic= 100mA, VcE =5V 2 V
" Pulse Test: Pulse Widths300jis, Duty Cycles2%
.=8 SAMSUNG SEMICONDUCTOR 619

Nt"N Ct"IIAAIAL
MPSA14 , 'SILICON 'DARLINGTON TRANsISTOR
• Collector-Emitter Voltage: Vces =30V TO-92
ABSOLUTE MAXIMUM RATINGS

Collector-Emitter Voltage Vces 30 V
Junction Temperature Tj 150 ,oC
, Referto 2N6427 for graphs 1. EmItter 2. Base 3. Collector
Collector-Emitter Breakdown Voltage BVces Ic=100pA,IB=0, 30 V

Collector Cut-off Current ICBO Vca =3(N,le =O 100 nA
Emitter Cut-off Current leBO Vae=1OV,lc=0 100 nA
'DC Current Gain hFe Ic=10mA, Vce=5V 10K
Ic=100mA, Vce=5V 20K
'Collector-Emitter Saturation Voltage Vcdsat) Ic=100mA,la=0.1mA 1.5 V
f=100MHz
'Base-Emitter On Voltage VBe (on) Ic=100mA, Vce=5V. 2 V
, Pulse Test: Pulse Width s 300jAs, Duty Cycles 2%
c8 SAMSUNG SEMICONDUCTOR 620 '

~
Collector-Emitter Voltage Vcw 40 V
Emitter-Base Voltage VEBD 4 V
1
• Refer to MPSA10 for' graphs

1 EmItter 2 Base 3. Collector
Characteristic Symbol Test Conditions Min lYP , Max Unit
"Collector-Emitter Breakdown Voltage BVcEo Ic=1mA,IB=0 40 V

Emitter-Base Breakdown Voltage BVEBO IE =100pA, Ic =0 4 V
Collector Cut-off Current ICBD VCB=3OV,IE=O 100 nA
"DC Current Gain hFE' Ic=5mA, Vc~=1OV 40 400
"Current Gain Bandwidth Product fr Ic=5mA, Vce=1OV ' 125 MHz
f=1ooMl:!z'
Collector-Emitter Saturation Voltage, VCE (sat) Ic=10mA,IB=1mA 0.25 V
Output Capacitance Cob VCB=1OV,IE=0 4 pF
f<;=100KHz
"'Pulse Test: Pulse Widths300~, Duty Cycles2%

MPSA25 ,SILICON, DARUNGTON TRANSISTOR'
• Coliector·Emitter Voltage: Ven =40V 10-92
.ABSOLUTE ~AXIMUM RATINGS (T. 25°C) =

Characteristic I' Symbol 1 Rating 1 Unit

Collector Current ic 500 mA
Junction Temperature Tj 150. °C
1. Emitter 2. Base 3. Col/ector

Collector-Emitter Breakdown Voltage BVces Ic=100pA, V8e=0 40 V

Collector-Base Breakdown VOltage BVc80 Ic =100pA, Ie =0 40 V
Collector Cut-off Current ICBO VC8=30V,le=0 100 nA
Emitter Cut-off Current leeo Vee=10V,lc=0 100 nA
Collector Cut-off Current ICES Vce=3OV, Vee =0 500 nA
"DC .Current Gain hFe Ic =10mA, Vce =5V .10K
Ic.=100mA, Vce=5V 10K
"Coliector~Emitter Saturation Voltage Vce (sat) Ic ·=100mA,l e =0.1mA 1.5 V
"Base-Emitter On Voltage VeE (on) Ic=100mA, VcE =5V 2 V
"Pulse Test: Width :s 300/lS, Duty Cycle :s 2%
c8 SAMSUNG SE~ICONDUcroR
•. 622
NPN EPITAXIAL
000K
1500K
3OOKr---
BE_.
r:--" " :"-;,, ~5V
t
DC CURRENT GAIN
f----
10000
-1'000
5000
3!lOO
I-
SAFE OPERATING AREA
- "
100",S
a: -- 1m. j\:
~500
~3OO "'" i'-. 15
"to- '\ 1\
i'00 =
j!
50
30
T.-2fiGC
'"
e_
3 5 10 30 50 100 300 500 1000 .10

10
"" 30 50 100
Ie (rnA), COLLECIOR CURRENT VeE (\I), COLLECIOR-EMITTER VOLTAGE
IlA$E-EMITTER SATURATION VOLTAGE
10
1e-100ms
200
100 ~
II
-VcE_5V I
Vae(saI)
I
vLlL I
0.1 1
10 30 50 100 300 (I 0.2 D.6 1.0 1.4 1B 2.2 2.6
Ie (mAl, COLLECTOR CURRENT v. (V), BASE-EMITTER VOLTAGE

,MPSA26 SIUCONDARLINGTON TRANSISTOR,
• Collector-Emitter Voltage: VCES =50V TO-92
• Collector Dissipation:' Pc (max)=625mW
. Characteristic . Symbol Rating U~it
Collector-Emitter Voltage VCES SO V

Emitter-Base Voltage • VEeo 10 V
Collector Current' Ic 500 , mA
Junction Temperature Tj 1S0 °C
Storage Temperature Tstg -SS-1S0 °C
, Refer to MPSA2S for graphs

Cltaracteristic Symbol Test Conditions Min ~p Max Unit
Collector-Emitter Breakdown Voltage BVCES le=100pA, VSE=O SO V

Collector-Base Breakdown Voltage BVceo ' le=100pA, IE =0 ' SO V
Collector Cut-off Current ICeo Vcs=40V,le=0 100 nA
Emitter Cut~off Current lEBO VeE=10V,le=0 100 nA
Collector Cut-off Current Ices Vce=40V, Vee=O SOO nA
'DC Current Gain hFe Ic=10mA; Vee=5V 10K
Ie =100mA, Vce =SV 10K
'Collector-Emitter Saturation Voltage VOE (sat) Ic=100mA,le=0.1mA 1.S V
'Base~Emitter On Voltage Vee (on) Ie =100mA, VCE =SV 2 V
• Pulse Test: Width :s 300/lS, Duty Cycle :s 2%.

NPN EPITAXIAL
• Collector· Emitter Voltage: VCES =60V TO-92
Characteristic I Symbol I Rating I Unit
Collector· Emitter Voltage Vces 60 V

Emitter·Base Voltage Veeo 10 V
Collector Dil1sipation Pc 625 mW
Junction Temperature . Tj 150 °C
, Refer to MPSA25 for graphs
.Characteristic . Symbol Test Condition Min lYP Max Unit
Coliector·Emitter Breakdown Voltage BVcES Ic =l00pA,VsE=O 60 V

Coliector·Base Breakdown Voltage BVceo Ic=100pA,le=0 60 V
Collector Cut·off Current lceo Vcs=50V,le=0 100 nA
Emitter Cut·off Current leeo Vse=lOV,le=O 100 nA
Collector Cut·off Current Ices Vee =50V, Vse=O 500 nA
'DC Current Gain hFe le=10mA, Vee=5V 10K
. le=100mA, Vce=5V 10K
'Coliector·Emitter Saturation Voltage VCE (sat) Ie =.100mA,.ls =O.lmA 1.5 V
'Base-Emitter On Voltage Vse (on) Ie =100mA, Vee =5V 2 V
, Pulse Test: Width s 300/AS, Duty Cycle s 2%

,IYIPSA42· ·NPN, EPITAXIAL SILICON TRANSISTOR
.HIGH VOLTAGE TRANSISTOR

• Collector·Emitter Voltage: VeE-O =300V TO-92

Coliector·Emitter Voltage VCEO 300 V
Collector Curr.ent . Ic 500 mA
Junction Temperature Tj I 150 °C
Ii
1 E'mltter 2. Base 3 Collector
Chal'!lcteristic.. Symbol Test Conditions Min l'yp Max Unit
·Collector-Emitter Breakdown Voltage BVceo Ic=1mA,le=0 300 V

Collector-Base Breakdown Voltage ·BVceo Ic =100,.A, Ie =0 300 V
Emitter-Base Breakdown Voltage BVeBO Ie =100,.A, Ic =0 6 V
Collector Cut-off Current Iceo Vce=200V,IE=0 100 nA
Emitter Cut-off Current leBO Vee=fN;lc=O 100 nA
"DC Current Gain hFE Ic=1mA, Vce=1OV 25
Ic=10mA, VcE =1OV 40
Ic =30mA, Vce =1OV 40
·Collector-Emitter Saturation Voltage Vce (sat) Ic ';'20mA, Ie =2mA 0.5 V
·Base-Emitter Saturation Voltage . Vee (sat) Ic =20mA, Ie =2mA 0.9 V
Current Gain Bandwidth Product h Ic=10mA, VcE =2OV 50 MHz
f=100MHz
Collector-Base Capacitance Ccb Vce =20V, Ie =0 3 pF
f=1MHz ,
• Pulse Test: Pulse Width:s3001'S, Duty Cycles 2%
c8 SAMSUNG SEMICONDUCTOR·

1000
I
500 -VCE-'
VCE-2fN
300
'-----
V "\
~
/
/
V
>,
1
10 30 50 100 3 5 10 30 50 100
Ie (mAl, COI.L.ECIOR CURRENT Ie (mA), COLLECIOR CURRENT
COLLECfOR·EMmER SATURATION VOLTAGE
COLLECfOR·BASE CAPACITANCE
•
0 100
'-- 1c.101B r--- r- IE_O

3
50 r--- r- '.lMHz
l Eg EJJ(oat)
i'-
VCE(OIII)
",-'"
IF== 1==
......
0.01
3 5 10 3050 100 300- ,0.1 D.3 D.5 35103050100
Ie (mA), COLLECIOR CUIIIIE!'"
c8 SAMSUNG SEMICONDUCTOR ,6,27

NPN ·EPITAXIA.L SILICON TRANSISTOR, . ·

• Collector.Emltte~Voltage: VCEo =200v . TO-92
• Collector DIssipation: Pc (max)=625mW
ABSOLUTE MAXIMUM RATINGS (Ta=25°C),

.
Characteristic .Symbol Rating Unit
Collector-Base. Voltage VCBO 200 ·V

• Refer to MPSA42 for graphs .

"., ,
Charactaristlc Symbol Test Conditions Min Typ Ma~ Unit
Collector-Emitter Breakdown Voltage BVcEo Ic=lmA,le';'O 200 V

Collector-Base Breakdown Voltage BVceo Ic=loopA,le=O 200 V
Emitter-Base Breakdown Voltage BVEBO IE =lOOpA, Ic =0 6 V
Collector Cut.off Current Iceo Vce = 16OV, IE =0 100 nA
Emitter Cut-off Current IEeo Vee=4V,lc=0 100 nA
'DC Current Gain I .lc =lmA, VcE =10V 25
hFE
Ic =10mA,.VcE=10V 40
'Collector-Emitter Saturation Voltage Vce (sat) Ic =20mA,le,;,2mA .0.5 V
'Base-Emitter Saturation Voltage Vee (sat) Ic =20mA,l e ;'2mA 0.9 V
Collector-Base Capacitance CCb Vce=20V,le=0 4 pF
f=lMHz
Current Gain Bandwidth Product fr Ic=10mA. VcE =20V 50· MHz
f:=100MHz
'Pulse Test: PulSe Widths 3OOjlS, Duty Cycles 2%
c8~AMSUNG SEMICONDUCTOR
MPSA44 NPN EXITAXIAL SILICON TRANSISTOR

TO-92
Collector-Base VOltage VCBO 500 V

Collector Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature
. Pc
Tj
Tstg
1.5
150
-55"'150
W
°C
°C
•
Collector-Base Breakdown Voltag BVcBO Ic=100,..A,IE=0 500 V

'Collector-Emitter Breakdown Voltage BVcEo Ic= 1 mA, 'B=O 400 V
Collector-Emitter Breakdown Voltage BVcEs Ic= 1 OO,..A, VSE=O 500 V
Emitter Base Breakdown Voltage BVEBO IE= 1 O,..A, Ic=O 6 V
Collector Cutoff Current lceo VcB =400V, IE=O 0.1 ,..A
Collector Cutoff Current ICEs VCE =400V, VBE=O 500 nA
Emitter Cutoff Current lEBO . VEB=4V, Ic=O 0.1 ,..A
-DC Current Gain hFE VcE =10V,lc=1mA 40
VCE =10V,lc=10mA 50 200
VcE=10V, Ic=50mA 45
VcE =10V,lc=100mA 40
-Collector-Emitter Saturation Voltage VCE (sat) Ie= 1 mA, 18=0.1 mA '0.4 V
Ic=10mA,IB=1mA 0.5 'V
- Base-Emitter Saturation Voltage VSE (sat) Ic';"10mA,IB=1mA 0.75 V
Output Capacitance Cob VcB=20V, IE=O, f=1MHz 7 pF
'Puls~ Test: Pulse Width;5300,..s, Duty Cycle;5201b
c8 .SAMSUNG SEMICONDUCTOR
MP$A44 NPN' EXITAXIAL SILICON TRANSI.STOR
DC CURRENT GAIN TURNoON SWITCHING TIMES

16 0 10
'40 U.~L. V,,='50~~

Ie/Ie 10
Ta 25°C
VeE OFF), 4V
'20
i'OO "'\.
"5 80 1.,..00
i 60 \ , I\~
8
g 40
i 20
0.5
~
0
H
-20 .~
td ~i'"i'"
-40
3 5 10 3050 100 500 1K 3K 5K 10K
0.1
, '0 30 50 '00
lc(mA), COLLECTOR CURREN'!' 1c(mA), COLLECTOR CURRENT
TURN-oFF SWITCHING TIMES CAPACITANCE

'00 k
Vcr: 150V Ta 25°C
Ic!1b s 'O 1='
MHz
0 Ta=25°C 500
0 300
'0
I=CJb
0
Is 0
3
1
'" .......
r--. 0
1-0
Cob
'"""
o. 5
O. 3
. "
5
3
I
o. , I ,
'0 30 50 100 0.1 0.3)5 1 3 5 10 3050 100 301.5001000
Ic(mA~ COLLECTOR CURRENT VcaCVJ, COLLECTOIHIASE VOLTAGE
ON VOLTAGE COLLECTOR SATURATION REGION
~ 0.4 H--t-tti-tHtl-t-t-t-ttttttt-----tHttitttr---t-r-Hi1tII
~
i 0.3 r+\++tttfllHrHttHtII--fl"\tt
,tttffil-t-HitttI
~ 02 l--N-fflltlt---,lf-1i<I'-tttltt--+-t-Nttttt----t-tttiffil
8
0.2 f--l-tti-!!V,,"'I"'sa"")"'=@:':,-':cJ:'-_'+!,'!::O--lf-+-bI'I-tttt----t-+1+HtII ~ 0' H-t+ttIltf-......
"""I.:+-t+HllP~\oQ-IrttHtiI-"'<.t+tttttI
~ i'"
oL-..-,l-:..l.JJ.!111"'---'-IIII..u.IIIJJ.II-.L-
1111 .u.J.WII.-'-1-I-"-'.IIJI ~LO~-3UOU50~'O-0~UU50~OW,~k~~3~k~5~k~'~~~3~0~k~100k
01 0.3 0.5 1 3 5 10 3050 100 300 "lG( 1000
io(mA), COLLECTOR CURRENT
c8 SAMSUNG SEMICONDUCTOR' ..
. 630'
'.,
MPSA44 NPN EXITAXIAL ~ILlCON TRANSISTOR
HIGH FREQUENCY CURRENT GAIN SAFE OPERATING AREA

'00 OOK Ifor IJuI , C,..,.,,,
VeE 'OV
0 f-10MHz
T. 25 D O
'ms
,nn '~~ ~ ~
, ......
1. 0.5
r----
0.3 F=
O. , 1 f.,l",;
,.
0:1 05 1 3 5 10 30 50 100 500 ,. '00 300 3k 5k 10
lc(mA), COLLECTOR CURRENT Vedv)' COLLECTOR VOLTAGE


• Collector-EmiHerVoltage: Vcao =35OV TO-92

Collector-Emitter Voltage VCED 350 V
Emitter-Base Voltage VE~O 6 V
ELECTRICA~ CHARACTERISTICS (Ta =25°C)
"Collector-Emitter Breakdown Voltage. BVcEO Ic=1mA,le=0 350 V

Collector-Emitter Breakdown Voltage BVcEs Ic =100pA, Vae=O· 400 V
Emitter-Base Breakdown Voltage BVEeo le=10pA,lc=0 6. V
,
Collector Cut-off Current !beo VCaf320V,l e=0 100 nA
Emitter Cut-off Current leeo Vee=4V,lc=0 100 nA
Collector Cutoff Current ICES Vce =320V, VBE=O 500 nA
"DC Current Gain hFe Ic=1mA, Vce=1OV 40
Ic=10mA, Vce=10V 50 200
Ic=50mA, Vce=10V 45
Ic=100mA, Vce=1OV 40
"Collector-Emitter Saturation Voltage Vee (sat) Ic=1mA,le=0.1mA 0.4 V
Ic=10mA,la=1mA 0.5 V
"Base-Emitter Saturation Voltage Vee (sat) Ic=10mA,le=1mA 0.75 V
Output Capacitance Cob Vca=2OV,le=0 7 pF
f=1MHz
" Pulse Test: pulse Width:s; 300j.ls. Duty Cycle:s; 2%


1000
500 1.om. 100m.

5OOr-+--+++-t-tt+l---I-VCE=1OV 300
I'\.
is Tc-~ 1DB
~
""B 100
" 50 -=-
I-Ta-25OC
~
8
30
'\.
1\
1
.!!
10
iI
5 10 30 50 100 3 5 10 30 50 100 300 500 1000
Ie (mA), COLLECI'OR CURRENT VCE (V). COLLECIOR-EMmER Wli.TAGE
•
10 20
I~=J I
,.--- Ic ... 101B f_1~Hz
........... ........
10
,
I f-- ._f--
Vae(sal)
1'0..
..
Vee sal)
,
i. ,II
I I
I ii,
0.01
3 5 10 30 50 100 300 500 1000 3 5 10 30 50 100 300
Ie (mAl. COLLEcroR CURRENT Vea ~ C01.LECIOIWIASE W:LTAGE
633
MPSA5s· . PNP EPITAXIAL
. SILICON TRANSISTOR:
.
. T.O-92
• Collector-Emitter Voltage: VCEO =6OV
, ,

,
Collector Dissipation Pc' 625 mW
Junction Temperature Tj 150 "C
Storage Temperature Tstg -55-150 "C
ELECfRICAL CHARACfERISTICS (Ta =25°C)

/
Characteristic Symbol Test Conditions Min lYP Max Unit·
'Collector-Emitter Breakdown Voltage BVCEO Ic=lmA,ls=O 60 V

Emitter-Base Breakdown Voltage BVEBO le=100pA,lc=0 4 V
Collector Cut-off Current ICEO Vce=6OV,ls=O 100 nA
Collector Cut-off Current Icso Vcs=60V,le;"0 100 nA
DC Current Gain hFE Ic=10mA, Vce=1V 50
Ic",l00mA, Vce=1V 50
Collector-Emitter Saturation Voltage Vce (sat) Ic =l00mA, Is =10mA 0.25 V
Current Gain Bandwidth Product h Ic=l00mA, VcE =1V 50 MHz
f~100MHz
Base-Emitter On Voltage Vse (on) Ic=l00mA, VCE=1V 1.2 V
• Pulse Test: Pulse Width~300,..., Duty Cycle~2%
.c8 SAMSUNG SEMICONDUCTOR 634'

MPSA55 PNP EPITAXIAL SILICON TRANSISroR

1000
500 - Vce_1V 500

300
t--t:::v
1000_,,_
e slV
300
,
~
I
~ 100
g
150
10
1 3 5 10 30 50 100 300 500 1000 0.2 D.4 0.6 D.8 1.0 1.2
Ie (mAl. COLLECIOR CURRENT VB. M. BASE-EMITTER VOLTAGE

BASE-JIII!ITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT .
0 1000
f-- o=10ls Vce_1

t--
1
V.. satl
VeE
--"
0.01 III 10
35 10 3050 100 300500 3 5 10 30 50 100 . 300500 1000
Ie (mAl. COL\.ECIOR CURRENT Ie (mAl. COLLECIOR CURRENT
cR SAMSUNG SEMICONDUCTOR' 635

MPSA56. , PNP EPITAXIAL SILICON TRANSISTOR
~MPLIFIER TRANSISTOR
• COliecto....EmltlerVOltag.: Vc:eo=8OV TO-92
ABSOLUTE MAXIMUM ,RATINGS (Ta =2S0C)
Collector-Base Voltage Vcao 80 V '

Emitter-Base Voltage leeo 4 V
I
Junction Tempereture Tj 150 OC

1. Emitter 2. aIe~. Collector
ELECTRICAL: CHARACTERISTICS (Ta =2'SOC)
Charect.rlstlc Symbol T.st Conditions Min Typ Max . Unit
'Collector-Emitter Breakdown VQltage BVceo Ic=1mA,ls=0 BO V

Emitter-Base Breakdown Voltage BVEBO IE=100pA,lc=0 4 V
Collector Clit-off Current lceo Vee=6OV,ls=O 100 nA
Collector Cut-off Current ICBO Vcs=BOV, IE ",0 100 nA
DC Current Gain hFE Ic=10mA, VcE =1V 50
Ic=100mA, VCE=1V 50
Collector-Einitter Saturation Voltage Vee (sat) Ic=100mA,Is=10mA 0.25 V
Current Gain Bandwidth Product h Ic=100mA, VCE=1V 50 MHz
f=100MHz
Base-Emitfer On Voltage VSE (on) Ic.=100mA, Vee .. 1V 1.2 V
~ Pulse Test: Pulse Width:::;300jAs, Duty Cycle::;2%
c8 SAM~UNG SEMICOND~croR 636

PNP EPITAXIAL
TO-92
. • Coliector·Emltter Voltage: VCES =20V
Collector-Emitter Voltage V CES ' 20 V

Collector-Base Voltage V CBO 20 V
•
Collector-Emitter Breakdown Voltage BVCES Ic=100pA,VBE='O . 20 V

Collector Cut-off Current ICBO Vce=15V, IE =0 100 nA
Emitter Cut-off Current lEBO VBE =10V,lc =0 100 nA
-DC Current Gain • hFE Ic=10mA, VcE =5V 20K
-Collector-Emitter Saturation Voltage Vce(sat) Ic =10mA, Ie =O.OlmA 1.0 V
-Base-Emitter On Voltage VBE (on) Ic=10mA, VcE =5V ' 1.4 V
Pulse Test: Pulse Width 5: 3001'S, Duty Cycle 5: 2%
c8 SAMSUNG SEMIC,?NDUCTOR ,
, 637:
· PNP .EPITAXIAL
SILICON DARLINGTON TRANSISTOR;~

1000K 1000
500 K ... Vf;<_5V

t - -1- VCE-5V
300K
K bo-,
i..- 0
K 5
K 3
lK 1
3 5 10 30 50 100 300 500 1000 ~ 5 10 30 50 100 300 500 1000
Ie (mA), COLLECTOR CU~RENT Ie (mA), COLLEctOR CURRENT
BASE-EMITTER SATURATION VOLTAGE BASE EMITTER ON VOLTAGE

10
r- Ic_1OO01s
100
r- t-- VCE=5V
I'=-~ VBE(sat)
Vce(sat) .1
I
1 ;t
S 5
5 .!!
3
II
II
0.01 1;
3 5 10 30 50 100 300 500 1000 Q4 o.S 1.2 1.1' 2.2 2.8
tc (rnA), COLLECI'OR CURRENT VBE (V), BASE EMITTER VOLTAGE
PNP EPITAXIAL
• Collector-EmlHer Voltage: Vces =30V TO-92


Collector Currerit Ic 500 mA
Storage Temperature Tstg -55-150 °c
•
Collector-Emitter Breakdown Voltage 'BVcEs Ic =100pA, VBE=O 30 V

Emitter Cut-off Current IEeo VBE =10V, Ic .. O 100 nA
'DC Current Gain hFE Ic=10mA, VcE =5V 5K
Ic=100mA, VcE =5V 10K
'Collector-Emitter Saturation' Voltage Vedsat) Ic=100mA,le=O.1mA 1,5 V
'Base-Emitter On Voltage VeE (on) Ic =;100mA, VCE=5V 2 V
Current Gain llandwidth Product fr Ic=100mA, VcE =5V 125 MHz
Pulse Test: Pulse Width s; 300~S, Duty Cycle s; 2%

. f=100MHz
c8 SAMSUNG SEMICONDUCTOR,
639'
PNP EPITAXIAL
• Collector-Emitter Voltage: VeES =30V TO-92
• Collector Dissipation: Pe (max)=625mW

Collector-Emitter .Voltage VCES 30 V


Collector-Emitter Breakdown Voltage BVcEs Ie =100pA, VBE=O 30 V

Collector Cut-off'Current ICBC VCB=30V,IE=0 100 nA
Emitter Cut-off Current lEBo VBE =10V, Ic =0 100 nA
-DC Current Gain hFE Ic=10mA, Vce=5V 10K
Ic=100mA, VCE=5V 20K
-Collector-Emitter Saturation Voltage Vce(sat) Ic=100mA,IB=0.1mA 1.5 V.
-Base-Emitter On Voltage VBE (on) Ic =100mA, VCE=5V 2 V
Current Gain Bandwidth Product fr Ic=100mA, VCE-5V 125 MHz
f=100MHz
- Pulse Test: Pulse Width s; 300j.lS, Duty Cycle s; 2%

MPSA70 PNP EPITAXIAL SILICON TRANSISTOR
TO-92
• Collector-Emitter Voltage: Vceo =40V
ABSOLUTE ,MAXIMUM RATINGS (Ta =25°C)

Emitter-Base'Voltage Veao 4 V
CharaCteristic
Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage
Symbol
BVceo
BVeBO
Test Conditions
Ic=1mA,la=0
le=100pA,lc =0
1. Emitter 2
Min
40
4
Base 3. Collector
lYP Max Unit
V
V
".
Collector Cut-off Current ICBO Vca =3OV, Ie =0 100 'nA
DC Current Gain hFe Ic=5mA, Vce=1OV 40 400
Collector-Emitter Saturation Voltage VCE (sat) Ic =10mA, la =1mA I 0.25 V
Current Gain Bandwidth Prodl,lct IT Ic=5mA, VcE =1OV 125 I MHz
f=100MHz
Output Capacitance Cob, VcB =10V, IE=O 4 pF
f=100KHz
641
MPsA1O.· /. PNP EPITAXIAL SILICON TRANSISTOR

1000
VCE=1OV
~~
;,/'
10
o.s 10
Ie (mA), COLLl5croR CURRENT Ie (rnA), COLLECTOR CURRENT
BASE·EMmER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE. OUTPUT CAPACITANCE
10 20
5r-- Ic-1018 ILl I

'.1ooKH
10 .--
1 II
VBE(...)
C'o..
"I"
1 VCE(sat) . ....... 1--'
f'..",
0.01
II,
0.1 03 o.s 1 3 5 10 30 50 100 3 5 10 30 50 100
Ie (mAl, cOLLECTOR CURRENT Vee (y), COLLECTOR-IIASE VOLT_

PNP EPITAXIAL
TO-92
• Coliector-EmiHer Voltage: VeES =40V
Characteristic Symbol Reting Unit

I
ColI,ector-Emitter Breakdown Voltage BVcEs Ic=loopA. VBE=O 40 V

Collector-Base Breakdown Voltage BVceo Ic=100pA,IE=0 40 V
Collector Cut-off Current Iceo Vce =30V. IE =0 100 nA
Emitter Cut-off Current lEBO VeE=10V.lc=0 ,100 nA
Collector Cut-off Current ICEs VCE =30V, VeE =0 500 nA
DC Current Gain hFE Ic=10mA. VcE =5V 10K
Ic=100mA. VcE =5V 10K
Collector-Emitter Saturation Voltage Vee (sat) Ic=loomA.le=0.1mA 1.5 V
Base-Emitter On Voltage VeE (on) Ic=100mA. Vce=5V 2 V
643
> PNP EPITAXIAL
MPSA75· SIJ,.ICON DARLINGTON TRANSISTOR·

1000K 10000
500
500K Vee_
f---
300K 3000
100pS
1mB
'\. "- 18, \.

~ r-- ~ I\. 1\
.~
51( I-- 50 "~
3K .~
30
LI .'-.
1K I I
0 II i'
3 5 10 30 50 100 300 1000 10 30 50 100
Ie (mA), COLLEc:IOR CURRENT . V.. (VI, COLLEClOII-EMITTER 1IOLll'GE
,
10 200
_100010 100
It _ I
3
VB.(m)
•
1 W( I
.0.1
10 30 50 100 300
1
o 0.4 o.a
1
1.2 1.8 2.0 2.4
Ie (mA), COUEC:roR CURRENT VIlE (V), BASE-EMITTER VOLTAGE,

PNP EPITAXIAL
MPSA76 SILICON DARLINGTON TRANSISTOR·
• Coliector·Emltter Voltage: VCES'=sov TO-92
• Collector Dissipation: Pc (max)=62SmW
Characteristic Symbol . Rating. Unit

ColI!'Clor Dissipation Pc 625 mW
1-. Emitter 2. Base 3. Collector
Collector-Emitter Breakdown Voltage BVcEs 1~=100~,VBE=0 50 V

Collector-Base Breakdown Voltage BVCBO Ic~l00~, IE=O 50 V
Collector Cut-off Current ICBO Vce =40V,IE=0 100 nA
Emitter Cut-off Current lEBO VeE =lOV,lc =O 100 nA
Collector Cut-off Current ICES VCE =40V, VeE =0 500 nA
DC Current Gain hFE Ic =10mA, VcE =5V 10K
Ic=100mA, VcE =5V 10K
Collector-Emitter Saturation Voltage Vcdsat) Ic=100mA,le=0.lmA 1.5 V
Base-Emitter On Voltage VeE (on) Ic=100mA, VcE =5V 2 V
645
......... 1:...... I'\A."''''
SILICON ·DARLINGTON TRANSISTOR:'
• Collector-EmiHer Voltage: Veo =60V TO-92
• Collector Disslpatio~: Pc (max)=625mW
Characteristic I Symbol I Rating I Unit

Collector Dissipatiori Pe 625 mW
Storage Temperature Tstg ~55-150 ·C
ELECTRICAL CHARACTERISTICS (TA=25°C)
Collector-Emitter Brel;lkdown Voltage BVeEs Ie =100j,A, VBe = 0 60 V

Collector-Base Breakdown Voltage BVeBC Ie =100pA, IE =0 60 V
Collector Cut-off Current leBo VeB =50V, IE =0. 100 . nA
Emitter Cut-off Current lEBo . VBE =10V, Ie =0 100 nA
Collector Cut-off Current Ices VeE =50V, VBE=O 500 nA
DC Current Gain hFE le=10mA, VeE =5V 10K
le=100mA, VeE =5V 10K
Collector-Emitter Saturatiofl Voltage VeE (sat) le=100mA,ls=0.1mA 1.5 V
Base-Emitter On Voltage VBE (on) le=100mA, VeE =5V 2 V
c8'SAMSUNG S~MICONDUCTOR 646

MPSA92/93 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR'

TO-92
Collector-Base Voltage : MPSA92 VCBO -300 V

MPSA93 -200 V
Collector-Emitter Voltage: MPSA92 VCEO -300 V
MPSA93 -200 V
Collector Cumint Ic -500 mA
Collector Dissipation (T.=25°Cf Pc 625 mW
Collector Dissipation (Tc=25°C) Pc 1.5 W
I
Junction Temperature Tj 1. Emitter 2. Base 3. Collector
150 °C
Collector Base Breakdown Voltage MPSA92 BVCBO Ic= -100,..A, IE=O -300 V
: MPSA93 -200 V
• Collector Emitter Breakdown Voltage MPSA92 BVcEo Ic= -1 mA, le=O -300 V
MPSA93 -200 V
Emitter Base Breakdown Voltage BVEeo IE=-100,..A, Ic=O -5 V
Collector Cutoff Current MPSA92 ICBO Vce=-200V, IE=O -0.25 y.A
MPSA93 Vce= -16011., IE=O -0.25 /AA
Emitter Cutoff Current lEBO VEe 'C'-3V, Ic=O -0.10 /AA
• DC Current Gain hFE V~E=-10V, Ic=-1mA 25
VcE =-10V,lc =-10mA 40
VCE=-10V,lc=-30mA 25
·Collector-Emitter Saturation Voltage VCE (sat)· Ic =-20mA, le=-2mA -0.50 V
• Base-Emitter Saturation Voltage VeE (sat)· Ic =-20mA, le=-2mA -0.90 V
Current Gain Bandwidth Product fr VcE =-20V,lc=-10mA 50 MHz
f=100MHz
Collector Base Capacitance MPSA92 Ccb Vce =-20V, IE=O 6 pF
: MPSA93 f=1MHz 8 pF
• Pulse Test: PW:-;;300/As, Duty Cycle.<;2%

·MPSA92193 PNP EPITAXIAL SILICON TRANSISTOR
DC CURI'IENT GAIN SATURATION VOLTAGES

1000 -10000
Va; 10V le-l0'IB
500 ~- ... 5000
VcE(satl
~
I
200 > -2000 II Illr
~~llJat)
r'::
!i: 100 ~
0
i!! 50
c
.m
\ S
i 20 g -200
1-100
>
~ -50
••>'Ii
-20
1 -10
1 5 10 -20 -100 -200 -1A -2A -SA-lOA -1 -2 -5 -10-20 -50 -100 -500 -1A-2A -SA-lOA
fc(!"A). COLLECTOR CURRENT 1.(mA). COLLECTOR CURRENT
. CURRENT-GAIN-BANDWIDTH PRODUCT CAPACITANCE

1000 100
VeE -2aV
f-l00MHz
50
.....
Cb
i'- .... 1-0

........
1/
1/ .....
Ceb
/'
10
~1 -5 -10 -20 -50 -100 0.1 0.2 0.5 10 20 50 100
lc(mA). COLLECTOR CURRENT Vca(V), COLLECTOfI.8ASE VOlTAGE
ACTIVE-REGION SAFE
OPERATING AREA
-500
-200
1', I'
~
~
a~t=
-100
i
!!i-50
,, \
CJ
\
U A9}
--'
"
1--1.5 WATT THERM~
" )V '" " I' I" \
1'1' ~
lJMJTAT1ON@T.-25·C " MP8-A92
825mW THERMAL I .-/
F=~MrrAT1ON@TA=25'C
~BONDING WIRE UMITATION
I--~ECOND BREAKDOWN I
UMITATION
Tj=150'C
I I'
" 1',
-5.0
-3.0 50 10 -20 30 50 100 200 300
Y.E(Y). COLLECTOR-EMITTER VOLTAGE
..
·cSC SAMSUNG SEMICONDUCTOR 648
MPSH10/11 NPN EPITAXIAL SILICON TRANSISTOR
VHF/UHF TRANSISTOR
TO-92

Collector-Emitter Voltage VoEo 25 V
Collector Dissipation (Ta=25°C) Pc 350 mW
Collector Dissipation (Tc=25°C) Pc 1.0 W
Storage Temperature Tstg -55"'150 DC.
•
Thermal Resistance, Junction to Case Rth(j-c) 125 °CIW 1. Base 2. Emitter 3. Collector
Thermal Resistance, Junction to Arnbien1 Rth(j-a) 357 °CIW
Collector,Base Breakdown Voltage BVCBO Ic= 1OO,..A, IE=O 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic= 1rnA, IB=O 25 V
Emitter-Base Breaj(down Voltage BVEBO IE=10,..A,lc=0 3.0 V
Collector Cutoff Current IcBO VcB =25V, IE=O 100 nA
DC Current Gain hFE VcE =10V,l c =4mA 60
Collector Emitter Saturation Voltage VCE (sat) Ic=4mA,IB=0.4mA 0.5 V
Base-Emitter On Voltage VBE(on) VCE=10V,lc=4mA 0.95 V
Current Gain Bandwidth Product h VcE =10V, Ic=4mA, f=100MHz 650 MHz
Collector Base CapaCitance .Ccb VCB= 1 OV, IE=O, f';" 1 MHz 0.7 pF
Collector Base Feedback Capacitance Crb VcB=10V, IE=O, f=1MHz
MPSH10 0.35 0.65 pF
MPSH11 0.6 0.9 pF
Collector Base Time Constant CC'rbb' VCB =10V, Ic=4mA, f=31.8MHz 9.0 ps

MPSH10/1-1 NPN EPITAXIAL SILICON TRANSISTOR
-COMMON-BASE Y PARAMETERS VB FREQUENCY

(Vcs=10V, Ic=4mA, T.=25°C) -
Ylb, INPUT ADMITTANCE

RECTANGULAR FORM - POLAR FORM
130 o
120
.11 0 -10
0
-20
0
0
.............
..........
--
I lIIb
I
oS -30 ,.
1000M~
r-..... . 1.
0
"- '-...
700
0
0
-bib
" """-
....... ........
-40
......... ....:: 200 100

0
0
0
"" -50
-60
100 200 300 400 500 700 1000 o 10 20 30 40 50 60 70 80
~MHz), FREQUENCY glb(mmhoal
Y'b, FORWARD TRANSFER ADMITIANCE
RECTANGULAR FORM POLAR FORM
100 90
0
60
Or--....
0
.... 0
Ot.--" ~ t-.. 0
"'- I
" ./ ~
f"o. t--....
400'
0
I 50 100
~ "-
- g "........ 600
l.
0
0 '" "- I"

40
30
I'\.
0
MHz
0
........ 20 1000
0
-30 0
100 200 300 400 500 700 1000 70 60 SO 40 30 20 10 0 -10 -20 -30
I(MHl), FREQUENCY gfb(mmhoo)
y;", REVERSE TRANSFER ADMITIANCE
MP8--Hl1
/-
Ij
I
!J. 100
200
/ -1.0
17 LI
-2.0 400
I,.; V
. . .v I............
Mrs- H 1°-
... -3_0
700
i...........
o --'" ~ ~ "'" -4.0
~ ::l; -5_0
1000MHz
0
200 300 400 500 700 1000 -2.0 1.6 -1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0
ItMHz), FREQUENCY g",(mmho8I

MPSH10/11 NPN EPITAXIAL SILICON TRANSISTOR
Vol>, OUTPUT ADMITTANCE

16
14
I to
! 9.0
2
I Or-- l7'000MHZ
8.0
7.0
V
[7 ig 8. 0
c 6.0
V l. J 700
~ 5.0
~
6.0
.~
5 4.0
4
3.0
./ 4.
i-
./
--
2.0 200
~ 2.0
1.0
~ 100
o o
100 200 300 400 500 700 1000 o
'.
2.0 4.0 B.O 8.0 10
f(MHZ), FREQUENCY gob (mmhoo)

DC CUI'IRENT GAIN BASE-EMITTER SATURATION VOLTAGE
1000 10000
VCE iiSV Ic 1DIs
500 5000
!2000
>
0 V,,(sat)
0
8= 100
500
0
S
.;: 200
g.
0 , 100
VcEisa1)
5 ~ 60
~
2 J 20
1 10
0.1 0.2 0.5 1 5 10 20 50 100 2005001000 0.1 0.2 0.5 1 5 10 20 50 100 200 5001000
1c(mA), COLLECTOR CURRENT Ic(mA~ COLLECTOR CURRENT

10060
vee 10V
f=100MHz
0
10 20 50 100
1c(mA), COLLECTOR CURRENT

CATV TRANSISTOR··
TO-92
Characteristic , Symbol "Rating . Unit
Collector-Base Voitage Vcoo 20 V

Collector Dissipation (T.=25?C) Pc 625 mW
Storage Temperature Tstg -55"-'150 °c
Thermal Resistance, Junction to Ambien Rth(j-a) 200 °C/W
1. ,Base 2. Emitter 3. Collector
.ELECTRICAL CHARACTERISTICS (Ta= 25°C)
Collector-Base Breakdown Voltage BVcoo Ic=1QO/-lA, IE=O 20 V

Emitter-Base Breakdown Voltage EWEBO IE=10/-lA, Ic=O 3.0 V
Collector Cutoff Current Icoo Vce= 15V, IE=O 100 nA
. DC Current Gain hFE VCE = 1 OV, .1~=5mA 25 250
Collector Emitter Saturation Voltage VeE (sat) Ic=10mA, le=1mA 0.5 V
Current Gain Bandwidth Product fr VCE= 1 OV, Ic=5mA 800 MHz
f=100MHz
Collector-Base CapScitance Ccb Vce=10V, IE=O, f=1MHz· 0.3 0.9 pF
Small Signal Current Gain hfe VcE =10V,lc=5mA 30
f=1KHz
Noise Figure NF Vcc=12V, Ic=5niA 6.0 dB
Rs=500 ,f=200MHz I
.Amplifier Power Gain Gpe Vcc=12V, Ic=5mA 24 dB

Rs=500, f=200MHz

MPSH17 NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT-GAIN CURRENT GAIN BANDWIDTH PRODUCT

10000
VCE = V VCE 10V
1000:_,,_ f 100MHz
500 .... 5000
~
..
i2000
r:mM.mt~.
0
g
1
10_".
20 ~++~fIlI--+++++I+H-+f-f+l+II-++H+f+!l
E
!iii
!
0
100
50
I
if 20
10~.1~0~.2~0~5~1~~~5~1~0~2~0~50~1~00~2~00~50~0~'000 '0 , 10 20 50 100
. Ic(mA). COLLECTOR CURRENT lc{mA). COLLECTOR CURRENT
•
BASE.£MITTER SATURATION VOLTAGE
COLLECTOR.£MITTER SATURATION VOLTAGE
10000
Vee" 10-18
~5000
~
~ 2000
Z
~1000 Vse (sat)
~ 500
i 200
./
! 100
~
V E sat)
l;So 50
~
~ .20
10
0.1 0.5 1 5 10 20 50 100 200 5001000
Id!"A~ COLLECTOR CURRENT
653
'MPSH20 NPN EPITAXIAL SILICON TRANSISTOR
VHF TRANSISTOR
TO-92
Collector-Base Voltage VCBO 40 V,

Collector-Emitter Voltage VCEO '30 V
Emitter-Base Voltage VEBO 4.0' V
Collector Dissipation (T.=25°C) P'c 350 mW
Collector Dissipation (Tc=25°C) Pq 1.0 W
Storage Temperature Tstg -00"'150 °C 1. Base 2. Emitter 3. Collector
Thermal Resistance, Junction to Case Rth(j-c} 83.3 °C/W
Thermal Resistance, Junction to Ambien1 Rthij-a} 357 °C/W
Characteristic Symbol Test Condition Min . Typ Max Unit·
Collector-Base Breakdown Voltage BVcao , Ic=100IlA, 'E=O 40 V

Emitter-Base Breakdown Voltage BVE~ IE= 1OIlA,lc=0 4,0 V
Collector Cutoff Current lcao VCB= 15V, 'E=O 50 nA
DC Current Gain hFE VcE =10V, 1c;=4mA 25
Current Gain Bandwidth Product fr VCE=10V, Ic=4mA 400 620 MHz
f=100MHz
Collector-Base Capacitance Ccb VcB=10V, 'E=O, f=1MHz 0.5 0.65 pF
Collector' Base Time Constant ·Cc·rbb' VCB=10V,IE=4mA 10 ps
f=31.8MHz
Conversion Gain (213 to 45 MHz) GCE VCE=10V, Ic=4mA 18. 23 dB
Oscillator injection=20OmV
c8 SAMSUNG SEMIC?NDUcrOR 654

MPSH20 NPN- EPITAXIAL SILICON TRAN'SISTOR
DC CURRENT GAIN BASE-EMITIER SATURATION VOLTAGE

COLLECTOR-EMITIER SATURATION VOLTAGE
1000 10000
VeE"'" 10V Ie 1 0-18
500 ~ 5000
200 i 2000
~ ~ 1000
I
100
Vee (sat)
; 500
50
g 20 ! 200
1 10 ! 100
/ Ve,(sat)
~
~ 50
~ 20
1 10
O.~ 0.2 0.5 1 2 5 10 20 50 10c.. 5001000 01 0.5 1 2 5 10 20 50 100 500 1000
lc(mA), COLLECTOR CUHRENT lc(mA~ COLLECTOR CURRENT
10000
U5000
8If
CURRENT GAIN BANDWIDTH-PRODUCT
Ve, 10V
f=100MHz
30
20
CAPACITANCES
T.-25°C
I
j!:
g1000
~
2000
t!Z r- '"
--
1.0
500
i...
" 200
I. 0.7
r-......
c..
Z
UI 100 It
""::>
(,) 0' 05
c..
50 ..... r-.
11
i 20
10 03
1 3 5 10 20 50 100 0.1 0.2 0.5 10 2.0 5.0 10 20 50 100
lc(mA), COLLECTOR CURRENT V.l.v), REVERSE VOLTAGE
CONVERSION GAIN CHARACTERISTICS CONVERSION GAIN CHARACTERISTICS

VARIATION WITH COLLECTOR CURRENT VARIATION WITH INJECTION LEVEL
50 40
~~iJ;ecoon'-200~V
VCE-10Vdc'
1c=4.0mAdc
45 f oac""'258MHz 35 _!8Ig-213MHz
. fmg"'213MHz fj=-45MHz
40,J;""45MHz
ao
35
z z
C C 25
- - --
" 30
"0 io-""
Z
/'
I~
25
20
V
i.-o"""
m
>
Z
0
20
15 /
V
i
(,)
15
(,)
f 10
V
~
10
~
" 50
0 400
1.0 2.0 3.0 4.0 5.0 100 200 300
lc(mA), COLLECTOR CURRENT V((mVJ, OSCILLAnON INJEcnON

COMMON-EMmER y PARAMETERS COMMON-EMITTER Y PARAMETERS

(lc=4.0mA, Vce=10V, T.=2S0C) IIc=4.0mA, VCE=10V, T.~2S0C)
INPUT ADMITTANCE REVERSE TRANSFER ADMITTANCE
24 /I 2
VI
J 9"
0 0
V
=o;.i/
/
L
/
........ 1/
2
!............. /' 7
V ./
P
~ "" ./
4.0
~ ~
l- I-'"
-gre
o o
40 60 80 100 150 200 300 400 4U 60 80 100 200 300 400
!(MHz), FREQUENCY • ~MHz), FREQUENCY
COMMON-EMITTER Y PARAMETERS COMMON-EMITTER Y PARAMETERS

(lc=4.0mA, VCE=10V, T.=2S0C) (lc=4.0mA, VYE=10V, T. =2S 0C)
J=ORWARD TRANSFER ADMITTANCE
120 2. 4
r..... ore I
~ b,.
i"'... V
/
V """ ~
'\ . ./
.v
'" r-.. ./
\
o
40 eo 80 100 200
\
300 400
o. 4
o
40
- 60
i;"
80
""
100
.,:...;;.-"
----
908 /
200 300 400
!(MHz), FRE\lUENCY !(MHz), FREQUENCY

VHF TRANSISTOR
TO-92

Storage Temperature Tstg _55-135 °C
Thermal Resistance, Junction to Ambien RthU-a) 357 °C/W
Characteristic Symbol Test Condition Min. Typ Max Unit
Collector-Base Breakdown Voltage BVeBO Ie'" 1 OO"A, IE=O 40 V

Emitter-Base Breakdown Voltage BVEBO IE= 1 O~, Ic=O 4.0 V
Collector Cutoff Current IcBO Vce=15V, IE=O 50 nA
DC Current Gain hFE VCE=10V,lc=8I]1A 30
Current Gain Bandwidth Product fr VCE=10V,lc=8mA 400 620 MHz
f=100MHz
Collector-Base Capacitance Ccb Vce=10V, IE=O, f=1MHz 0.25 0.36 pF
Conversion Gain (213 to 45 MHz) GCE Vcc=20V, Ic=8mA 19 24 dB
~
Oscillator injection= 150mV

Conversion Gain (60 to 45 MHz) I GCE Vcc =20V, Ic=8mA 24 29 dB
Oscalator injection= 150mV

'MPSH~4 MPN EPITAXIAL SILICON. TRANSlsrQR
j.
CONVERSION GAIN CHARACTERISTICS

(Vc~=20V,
Rs=RL=502, iH=44MHz, B.W=6N1Hz)
CONVERSION GAIN versus CONVERSION GAIN _sus INJECTION LEVEL
COLLECTOR CURRENT
40 0
'8Q=6~MH2' I f'>S<. == )OMHZ ' .. -6JMHz, L~1o.l,Hz
vr- ~
-
30
-
30
~ I-- r--
'1'
~.~ -~
f'ilg-=213MHl, fow:=275f1 Hz
i
u 20
•
I
/ ""'" f8l(l=213MHz. foso=-275MHz
! 0
I
0sc'nJi'5Omf"" i
1c=8 OmAdc
00 2.0 4.0 6.0 8.0 10 12 14 16 00 100 200 300 400

lc(mA~ COLLECTOR CURRENT V,(mVj. OSCILLAnON INJEcnON
COMMON·BASE Y PARAMETERS
(VCE=15V, T. = 25°C)
INPUT ADMITIANCE REVERSE TRANSFER ADMITTANCE
50r--r--r--T~~~~~~~-r--r-~ O. 1
"=4~Hzl
z
Nc 13M z _ ,
~'
40r-~--~~--+--+--1-~--~-~~~ 8
- - 60MHz , Ole -I>",
gre < -0.01 mmho

4
b.
;;"-
°0~02.~0~4~.0~6~.0~8~.0~'~0~7.'2~7'4~~'~6~'~8~20 o
o 2.0 4.0 B.O 8.0 10 12 14 16 18 20
Ic(mA~ COlLECTOR CURRENT Ic(m~ COLl.ECTOR CURRENT
FORWARD TRANSFER ADMITIANCE OUTPUT ADMITIANCE

200 1. 0
V
1=4 MHz
V " \. ~ o. 8
f=45MHz
/ g
i!i •
If:
i 120
/ C 0.6
~.
~ 80 /
I
/
/"
If 0.4
goo V
J
...~ V· V
i/gte /
f
J! 40
V I 0.2
'- ..... ~
....
I o
V
V~ ./
V
o 2.0 4.0 6.0 8.0 10 12 14 16 18 20 2.0 4.0 6.0 8.0 10 12 14 ,16 18' 20
Ic(m~ COLLECTOR CURRENT It(mA~ COLLECTOR CURRENT
CS'SAMSUNG SEMICONDUCTOR 658

.MPSH24 NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN BASE·EMIITER SATURATION VOLTAGE

COLLECTOR-BASE SATURATION VOLTAGE
1000 10000
Vce- 10V c , 'I
500
200 0
~ 100 0 BE (sal)
i 50 0
~ 0 0
g
veeC"')
J 10 0
5 0
2 0
1 10
0.1 0.2 0.5 1 2 6 10 20 50 100 200 5001000 01 0.5 1 2 5 10 20 50 100 200 5001000
IclmA~ COLLECTOR CURRENT Ie (mA~ COLLECTOR CURRENT
10000
0
CE 10V
f~10 OMHz I
0
0
0
10 20 50 100
IclmA~ COLLECTOR CURRENT

JMPSL01, NPN EPITAXIAL SILICON TRANSISTOR
TO-92
• Collector-Emitter vqltage: Vcm =12OV
• Collector DIssipation: Pc (max)=625mW

I
Collector-Base Voltage Vevo 140 V.

.Colle,ctor-Emitter Voltage Veeo 120 V
Emitter-Base Voltage VEBO 5. V
Junction Temp~rature . TJ 150 DC
Storage TemperatiJre Tstg. -55-150 DC
Characteristic Symbol Test Conditions Min Typ .. Max Unit
"Collector-Emitter Breakdown Voltage BVcEO Ic=1mA,IB=0 120 V

Collector-Base Breakdown Voltage BVCBO Ic =100pA,IE=0 .. 140 V
Emitter-Base Breakdown Voltage BVEBO IE=10pA,le=0 5 V
Collector Cut-off Current .ICBO VCB=75V,IE-0 1 pA
Emitter Cut-Off Current lEBO VBE =4V, le"'O 100 nA
"DC Current Gain hFE .lc .. 10mA, Vce=5V 50 300
Collector-Emitter Saturation Voltage Vee (sat) le=10mA,IB=1mA 0.2 V
Ic=50mA,IB=5mA 0.3 . V
Base-Emitter Saturation Voltage VeE (sat) Ic=10mA,le"'1mA 1.2 V
"lc=50mA,le-5mA 1.4 V
Collector-Base Capacitance Ccb VcB =1OV,IE-0 8 pF
f=1MHz
"Current Gain Bandwidth Product h . Ic .. 10mA, VCE z 10V 60 MHz
f=.100MHz
" Pulse Test: Pulse Widths300j.lS, Duty Cycles2% .
c8 SAMSUNG SEMICONDU~R 660

MPSL01 NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT '

1000
1000
'I·
500 r--- rVcE-5V l- ~VCE_1W
300
VI-'"
I
- -
3'
0 1
0.1 0.3.0.5 3 5 10 30 50 100 0.1 Cl.5 1 3 10 30 100
Ie (mA), COLLECTOR CURRENT Ie (mA), COLLECIOII CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR-BASE CAPACITANCE
10
12 !
I--- ic-101e
- IEJ
f·1MHz
1
10
I-- VBE(sat)
I" I......
1 r---....
....
I-- VeE (sat)
r--
0.01 111111 0
0.1 D.3 o.s 1 3 5 10 30 50 100 . 0.1 Q.3 Cl.5 10 20
Ie (mA~ COLLECTOR CUAMNT Vco(V), COLLECIOII-BASE VOLTAGE
c8 SAMSUNG SEMICONDUcroR .' 661

AMPLIFIER TRANSiStoR
TO-92
• Collector-Emitter Voltage: Vc~o =100V
• Collector Dissipation: P~ (max)=625mW

. Junction Temperature TJ .150 °C
• Refer to 2N5401 for graphs 1. Emitter 2. Base 3. Collecfor
"Collector-Emitter Breakdown Voltage BVcEo Ic=1mA,le=0 100 V

Collector-Base Breakdown Voltage BVcBO 'c =100pA,IE=0 100 V
Emitter-Base Breakdown Voltage BVEeo . IE =10pA, Ic =0 4 V
Collector Cut-off Current Iceo Vce =50V,IE=0 1 pA
Emitter Cut-off Current IEeo VEe =3V,lc =0 100 nA
"DC Current Gain hFE Ic=50mA, VCE=5V 40 25Q
'Collector-Emitter Saturation Voltage VCE (sat) lo=10mA,le=1mA 0.25 V
"Base-Emitter Saturation Voltage VeE (sat) ic =10mA,le=1mA 1.2 V
Output Capacitance Cob Vce =10V,IE=0 8 pF
f=1MHz
Current Gain Bandwidth Product h Ic =10mA, VCE=10V 60 MHz
f=100MHz
" Pulse Test: Pulse Widths;300/AS, Duty Cycles2%
c8 SAMSUNG SEMICONI?UCTOR 662

S88050 NPN EPITAXIAL SILICON TRANSISTOR
·2W OUTPUT AMPLIFIER OF PORTABLE

RADIOS IN CLASS TO-92
. B PUSH-PULL OPERATION~
• Complimentary to 558550
• Collector Current Ic =1.5A
• Collector Di.ssipation Pc=2W (Tc=25°C)

Collector-Emitter Vpltage VCEO 25 V
Collector Current Ic 1.5 A
Collector Dil\sipation Pc 1 W
Junction Temperature Tj 150 °C 1. Emitter 2. Base 3. Collector
Storage Temperature Tstg -65"-'150 °C
Characteristic SymbOl Test Conditions Min Typ Max Unit
Collector· Base Breakdown Voltage . BVCBO le= 1 OO,..A, IE=O 40 V

Collector· Emitter Breakdown Voltage BVcEo Ic=2mA, IB=O 25 V
Emitter·Base Breakdown Voltage BVEBO IE=100,..A,lc=0 6 V
Collector Cutoff Current ICBO VCB =·35V, IE=O 100 nA
Emitter Cutoff Current lEBO VEB =6V,lc=0 100 nA
DC Current Gain hFE1 VcE =1V,lc=5mA 45 135
hFE2 VCE=1V,lc=100mA 85 160 300
hFE3 VcE =1V,lc=800mA 40 110
Collector· Emitter Saturation Voltage Vce(sat) Ic=800mA, IB=80mA 0.28 0.5 V
Base·Emitter Saturation Voltage VBE(sat) le=800mA,IB=80mA 0.98 1.2 V
Base·Emitter Voltage VBE VcE =1V,lc=10mA 0.66 1 V
Output Capacitance Cob VcB =10V,IE=0 9.0 pF
f=1MHz
Current Gain-Bandwidth Product fr VcE=10V,lc=50mA 100 190 MHz
hFE (2) CLASStFlCATJON
Classification B C 0
hFE (2) 85-160 120·200 160-300
663 .
SS8050 NPN EPITAXIAL SILICON TRANSISTOR

5 1000
I
, I. 3rm~~
- 500 VCE=1V
1/ 300
-
04
IV Is-2.5mA
~
3
II/. I. 2rmA r- .'"
Z
100
IV w
a:
a:
::>
50
30
2IV
la-'15mA <>
<>
c
r/ I
I. '(mA I--
i 10
1
(I '3 _ _
V Is-05mA
I 1~~~~~~~~~~~~~~~
04 08 12 1.6 01 03 05 1 3 5 10 3050 1003005001000

V.ElV), COLLECTOR-EMITTER VOLTAGE lc(mA), C.oLLECTOR CURRENT
BASE-EMITTER ON VOLTAGE BASE-EMITTER'SATURATION VOLTAGE

100
0
VeE ,,,= 0 Ic=101s
0 a
0 a
VBE(sat)
5
3
Vce(sat)
O. 5
o. 3
o. 1 II 0
"'"
o 0.2 04 06 08 1.0 12 1 0.3 a5 3 5 10 3050 100 300500 1000
V.E(V), BASE-EMITTER VOLTAGE lc(mA), COLLECTOR CURRENT .

0
0 Vee 10V
0
f lMHz
I---i""" ..... le- O
0 0
0
0
0 0
3
-
a
5
r-- -
3
3 10 30 50 100 300 3 5 10 30 50 100

lc(mA), COLLECTOR CURRENT V.g(1/), COLLECTOR-BASE VOLTAGE

SS8550 PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMP~IFIER OF PORTABLE

RADIOS IN CLASS TO·92
B PUSH-PULL OPERATION .
• Complimentary to 5580S0
• Collector Current Ic=-1.SA
• Collector Dissipation Pc=2W (Tc=2S·C)
ABSOLUTE MAXIMUM RATINGS(Ta =25°C)
Collector· Base Voltage VCBO -40 V

Collector Current Ic -1.5 A
•
Junction Temperature Tj 150 'c 1. Emitter 2. Base 3. Collector
Storage Temperature Tstg -65"'150 'c
Characteristic Symbol Test Conditions Min Typ Max .Unit
Collector-Base Breakdown Voltage BVcBO Ic=-100!,A, IE=O -40 V

Collector-Emitter Breakdown Voltage BVcEo Ic=-2mA, IB=O -25 V
Emitter-Base Breakdown Voltage BVEBO IE=.-100!,A,lc=0 -6 V
Collector Cutoff Current ICBO VCR=-35V.I,=0 -100 nA
DC Current Gain hFE1 VC.=- IV, Ic=-5mA 45 170
hFE2 VCE = -1 V, Ic= -1 OOmA 85 160 300
hc ,3 VcE =-1V,lc=-800mA 40 80
Collector-Emitter Saturation Volt~ge VCE(sat) Ic=-800mA,IB=-80mA -0.28 -0.5 V
Base-Emitter Saturation Voltage VB.(sat) Ic =-800mA, IB=-80mA -0.98 -1.2 V
Base Emitter Voltage VB. VcF =-1V.lc=-10mA -0.66 -1.0 V
Output Capacitance Cob VcB =-10V.I.=0 15 pF
I t=lMHz
Current Gain-Bandwidth Product. fr Vc.=-10V, Ic=-50mA 100 200 MHz
Classification B C 0
hF• (2) 85-160 120-200 160-300

888550 PNP EPITAXIAL 'SILlCON\ TRANSistOR
, STATIC CHARACTERISTIC , DC CURRENT GAIN

-05
I 1 1 0 0 0 m_ _
I~-' t-0ml- 500 VeE -1V
/' IB",,-a.5mA _ 300
4 1
!J I. r-0mAI-
I~100~~~~~~~~~~~!!~~~~~!!I
3 fI I.
r5m~
~
!Z
V I.
fOm1=
50
30~~HH+Ht-~~~Hr~r+rH+H-++4~ttH
2 I,
-t5ml~ g
le=-11.0mAI i IO
-0, 1 " I, C.SmA

_ _
I'"
I I
-04 -0,8 -1.2 -1,6 -2 -01 -0.5 -1 -3 -5 -10 -30-50 -100 -50Q-1000
VeaV), COLLECTOR-EMITTER VOLTAGE IdmAl, COLLECTOR CURRENT
BASE·EMITIER ON VOLTAGE BASE-EMITIER SATURATION VOLTAGE

-100
COLLECTOR EMmER SATURATION VOLTAGE
le=tOle
-50 Vee w- tIj-500 0
-30 ~-3000
!Z g
II! J Z
) !5() -1 0 ~-100 0
II: VSE(sat)
-5
~:::I
~ -500
3 ~ -300
II
8 ~
~ - ,1
i
i-Hl 0
-0, 5
~
J=:
0 VCE(sat)
-0, 3 0
lA'"
l.-+1"1
-0, 1 I -1 0 II
o -0,2 -0.4 -0,6 -0,8 -1 -1.2 -0.1 -0.5' -1 -3 -5 -10 -30-50 -100 -500-1000
V"(V), BASE-EMITTER VOLTAGE IdmAl, COLLECTOR CURRENT

1000 100
g
~ 500
VeE 10V
50 -- f==1MHz
IE=O
:c 300 30
..........
I~ I
~
V
100
I-' 0
r-.... t-...
!it
lI! 50
j 5
'8
;
30
10
-1 -3 -5 -10 -30-50'-100 -300 -1 -3 -5 -10 -30-50 -100 -300
IdmAl, COLLECTOR CURRENT Vea(vl, COLLECTOR-BASE VOLTAGE

AM CONVERTER, AM1FM IF AMPLIFIER

GENERAL PURPOSE TRANSISTOR TO-92

•
Collector-Base Breakdown Voltage BVcBO Ic=100!,A,IE=0 50 ·V

Emitter-Base Breakdown Voltage BVEBC 1~=1 OO!,A, Ic=O 5 V
Collector Cutoff Current IcBC VcB =50V, IE=O 100 nA
Emitter Cutoff Current lEBo VEB=5V, Ic=O 100 nA
DC Current Gain hFE V~r=5V. 1~=1mA 28 90 198
Collector-Emitter Saturation Voltage VCE(sat) Ic=10mA,IB=1rnA 0.08 0.3 V
Base-Emitter Voltage VBE VcE =5V, Ic=1mA 0.65 0.7 0.75 V
Output Capacitance C9b VCB= 1 OV, IE=O 1.5 pF
f=1MHz
Current Gain-Bandwidth Product h VcE =5V,lc =1mA 150 370 MHz
Noise Figure NF VcE=5V, Ic= 1.OrnA 2.0 4.0 dB
f=1 MHz, Rs =5000
hFE CLASSIFICATION.
Classification 0 E F G H I
hFE 28-45 39-60 54-80 72-108 97-146 132-198

STATIC CHARACTERISTIC' DC CURRENT GAIN
11. ._
1000
500
300
VCE=5V
I-
Z 50
w
II:
II:
:::> 30
()
()
Q
'1 10
20 40 60 80 100 01 03 10 30 100 300 1000

Vco(V), COLLECTOR-EMITTER VOLTJ\GE lc;(mA), COLLECTOR CURRENT

1000 1000
I-
Vae(sat)
~ 50a
~ 30a I' VCE-5V
a
i 100
"
Vcc(sat)
~
1-'11
I:
I-
ifi
a II! 10
a
B 5
1c=101B
I
a 1
3 .5 10 30 .50 100 03 3 5 10 30 50 100 300 1000
Ic(mA), COLLECTOR CURRENT lc;(mA), COLLECTOR CURRENT
c8 SAMSUNC3 SEMICONO'UCroR' 668

1W OUTPUT AMPLIFIER OF POTABLE

RADIOS IN CLASS TO-92
B PUSH-PULL OPERATION.
• High total power dissipation. (PT=625rnW)
• High Collector Current. (lc =-500mA)
• Complementary to SS9013
• Excellent lIFe linearity.
ABSOLUTE MAXIMUM ~ATINGS (Ta =2S0C)
Collector·Base Voltage Vcoo -40 V

Emitter·Base Voltage Veoo -5 V
•
Collector Current Ic -500 rnA
Collector Dissipation Pc 625 ,mW 1 Emitter 2 Base 3 Collector
Junction Temperature Tj 150 'c
Storage Temperature Tstg -55"-'150 'c
Characteristic Symbol Test ConditIon Min Typ Max Unit
Collector-Base Breakdown Voltage BVcoo Ic=- 1OOIlA,IE=0 -40. V

Collector-Emitter Breakdown Voltage BVcEo ic=-1mA,ls=0 -20 V
Emitter-Base Breakdown Voltage BVEoo IE=- 1OOIlA,lc=0 -5 V
Collector Cutoff Current lcoo Vcs =-25V,IE=0 -100 nA
Emitter Cutoff Current IEoo VEs=-3V, Ic=O -100 nA
DC C\lrrent Gain VcE=-1V,lc=-50mA 64 120 202
h FE '
hFE2 VcE=-1V,lc=-500mA 40 90
Collector· Emitter Saturation Voltage VCE(sat) Ic=-500mA,ls=-50mA -0.18 -0.6 V
Base-Emitter Saturatioh Voltage VSE(sat) Ic=-500mA,ls=-50mA -0.95 -1.2 V
Base-Emitter On Voltage VSE(on) VcE =-1V,lc=-10mA -0.6 -0.67 -0.7 V
Classification 0 E F G H
hFd1) 64-91 78-112 96·135 112-166 144-202

S$$C)12 .• . PNP EPITAXIAL SILICON TRANSISTOR·
STATIC CHARACTERISTIC DC .CURRENT GAIN

-50 100a
/'
~
V I'
V
,.. I~=LJ I I 500
Vc!-!..l~
V :.,.....- ~I,~-JOO,.A 30a
-- --
" ,... V
r' ,.;.- "-1150~
V a
ir" ~ !-- "~-10~,.A
-10
~ - - I--
":,:-50,.A
a
a
,,-
o a
o -10 -20 -30 -40 -50 -10 -30 -50 -100 -300 -500 -1000
Vce(V), COLLECTOR-EMITTER VOLTAGE IclmA), COLLECTOR CURRENT

-1000 COLLECTOR-EMITTER SATURATION VOLTAGE
VBE{sat)
w
~-500
~-300
z II
j
tn-100 /
Vi-"
~ VCE(sat)
t
-
-50
il ~
> -30
J
Ic=101B
0
-10 -30 -50·' -100 -300 -500 -1000 -1 -3-5 -10 -30 -100 -300 -1000 -3000 -10000
IclmA~ COLLECTOR CURRENT IclmA), COLLECTOR CURRENT
c8 SAMSUNG SEMICONDUCfOR 670

1WOUTPUT AMPLIFIER OF POTABLE

RADIOS IN CLASS 10-92
B PUSH-PULL OPERATION .
• High total power dissipation. (PT=625mW)
• High Collector Current. (Ie = 500mA) .
• Complementary to 889012
• Excellent hFE linearity.
ABSOLUTE MAXIMUM ~ATINGS'(Ta=25°C)

•
ColleCtor Dissipation Pc 625 mW 1. Emitter 2. Base 3. Collecfor
ELECTRICAL CHARACTER;lSTICS (Ta =25 °C)

Collector-Base Breakdown Voltage BVCBO Ic=100JlA.IE=0 40 V

Collector-Emitter Breakdown Voltage BVcEO Ic= 1 mAo IB=O 20 V.
Emitter-Base Breakdown Voltage BVEBO IE= 1 OOJlA. Ic=O 5 V
Collector Cutoff Current ICBO' VCB=25V. IE=O 100 nA
DC Current Gain hFE1 VCE=1V.lc=50mA 64 120 202
hFE2 VCE=1V. Ic=500mA 40 120
Collector-Emitter Saturation Voltage VCE(sat) Ic=500mA. IB=50mA 0.16 0.6 V
Base-Emitter Saturation Voltage VBE(sat) Ic=500mA.IB=50mA 0.91 1.2 V
Base,Emitier On Voltage VBE(on) VCE=.1V.lc=10mA 0.6 0.67 0.7 V
Classification 0 E F G H
hFe(1 ) 64·91 78·112 96·135 112·166 144·202

-
20 ,...- 100a
~J'4o,.l
-
8"" 500
sl/
I I
Is=1201lA 300 VeE 1V
i '" I
.-- ",/ le=r
~ 1
4
OJtA I-- I--
B 12
~ ~ io" 1s=80""
~ 0 0
1'~60"" ~
1
8 8 I-- t--
a
I .4
Sir'
IB=j"" 5
1s=120""
0
10 20 30
I 40 50
1
3 5 10 30 50 100 300 1000 3000 10000
Vce(\I), COLLECTOR-EMITTER VOLTAGE Ic(mAI, COLLECTOR CURRENT
BASE·EMITTER SATURATION VOLTAGE CURRENT GAIN·BANDWIDTH PRODUCT

10000 fOOD
f- ~=101B VeE 6V
0
I"""-
0
vec(sat)
a
0
0
VCilj'1
0
.,. I II
0 II 1
10 30 100 300 1000 3000 10000 10 30 -100 300 1000 3000 10000
IclmA), COLLECTOR CURRENT IclmA), COLLECTOR CURRENT

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE

• High total power dissipation. (PT=450mW) 10-92
.. High h.E and good linearity .
-- Complementary to 559015
Collector-Base Voltage VCBAJ 50 V

Emitter-Base Voltage VEBAJ 5 V
•
Collector-Base Breakdown Voltage BVcBAJ Ic= 1 OOjJA, IE=O 50 V

Collector-Emitter Breakdown Voltage BVcEo Ic= 1mA, 1.=0 45 V
Emitter-Base Breakdown Voltage BVEBAJ IE= 1 OOjJA, Ic=O 5 V
Collector Cutoff Current ICBAJ Vcs=50V, IE=O 50 nA
Emitter Cutoff Current IEBAJ VEs=5V, Ic=O 50 nA
DC Current Gain hFE .VcE=5V,lc=1mA 60 280 1000
Collector-Base Saturation Voltage VCE(sat) Ic= 1 OOmA. IR=5mA 0.14 0.3 V
Base-Emitter Saturatio!) Voltage V.E(sat) Ic=100mA.ls=5mA 0.84 1.0 V
Base-Emitter On Voltage VSE(on) VCE=5V. Ic=2mA 0.58 0.63 0.7 V
Output CapaCitance Cob Vc.=-10V, IE=O 2.2 3.5 pF
f=1MHz
. Current Gain-Bandwidth Product h VCE=5V,lc=10mA 150 270 MHz
Noise Figure NF VcE=5V, Ic=0.2mA 0.9 10 dB
f= 1 KHz. Rs = 2KO
hFE CLASSIFICATION·
Classification A B C 0
hFE 60-150 100-30b 200-600 400-1000

889014 NPN EPITAXIAL SILICON TRANSISTOR

100 1000
90
1.~160,..4J ' 500 VCE-5V
.... 80 f-- ~11.c14.o_A

Z ...... 1.-120,..4 300
z
'"a:a: \
----
70
:> io"" ~IB=100~A ~
u
a: 60
0
....
U
'"
....
....
50
!--
Is=80",A
IB"'60~A
iB 10 0
\
0
U 40 "-- g
:,.!-- J Ii0
~
j 30 Is=-401o(A
r- 0
20
" IB-2O_A
I
10
10
10 20 30 40 50 3 5 10 30 50 100 300 1000
V"'(V), COLLECT-EMITTER VOLTAGE le(mA), COtLECTOR CURRENT

1000 1000
VSE(sat)
Vce=5V
0
0 0
.......
/
V V
1\
0 0
V
Vce(sat)
0
0
lc""'201s
0
3 5 10 30 50 100 300
II 0
" lc(mA), COLLECTOR CURRENT,

1000 3 5 10 30 50
100 300 1000
c8 SAMSUNG SEfteICONDUCTOR' 674

LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92

• Complement to SS9014
CoHector-Base V~ltage Vcso -50 V

Collector Current Ic . -100 mA
•
Characteristic Symbol Test Conditions Min Typ Max Unit .

Collector-Base Breakdown Voltage BVCBO Ic=-100,..A,IE=0 -50 V
Collector-Emitter Breakdown Voltage BVcEo Ic=-1mA,IB=0 -45 V
Emitter-Base Breakdown Voltage BVEBo IE,,:,-100,..A, Ic=O -5' V
Collector Cutoff Current IcBO VCB=-50V,IE=0 -50 nA
DC Current Gain hFE VcE =-5V,lc=-1mA 60 200 600
Collector-Base Saturation Voltage Vce(sat) 1~=-100mA. IR =-5mA -0.2 -0.7 V
Base-Emitter Saturation Voltage· VBE(sat) Ic=-100mA, 'B=-5mA -0.82 -1.0 V
Base-Emitter On Voltage VBE(on) Vc.=-5V Ic=-2mA -0.6 -0.65 -0.75 V
Output Capacitance Cob VcB =-10V, 1.=0 4.5 7.0 pF
f=1MHz
Current Gain-Bandwidth Product fr VcE=-5V,lc=-10mA 100 190 MHz
NOise Figure NF VCE=-5V.lc=-0.2mA 0.7 10 dB
f=1KHz, Rs=lKU
hFE CLASSIFICATION
Classification A B C
hFE 60-150 100-300 200-600
675

-5 0 -100
-4 5
-50
IB=-400tl~ !.
k- ~ .-- -30
--
Ia= -350~A .
I' ~ I
it
~
!!i0-30
-35
II"
~
I-- -
Is ""-300J,lA_
I I
- 1-,0
o
I
Is=- 25O.u A -
:§ ,...- I ~ -5
b -2 5 '/ Is=-200j.lA- t;
-
~ -3
~
0-20
_r- I I
Is=-150IJA 8
o
Ile=-100,uA
I I
1- 1
-10 ~
5
I
J 1
-0 5
Is--SOJ.lA -03
-5
-0 1
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -02 -04 -06 -08 -1 a -12
Vc,(V), COLLECTOR-EMITTER VOLTAGE V,,(V), BASE·EMITTER, VOLTAGE

100 0 1000
500 Vc, 5V
V" 6V
300
~ 10 0
~
"ifi
t- V
a:
8
50
30
./
g t-
,ifi 50
1,0 a:
a:
::>
0 30
5 ~
":E'J:
1 10
-01-03 -1 -3 -5 -10 -30 -100 -95 -1 -3 -5 -10 -30
Ic(mA), COLLECTOR CURRENT Ic(mA), C.oLLECTOR CURRENT

-tOO 0 20
,-L1
Ie -Ola
w VBE(sat) 1
"~-50a IE=O
o
>-30a a
~
i
>-10 0
g
5
"-
'"'"
~ -5 0 VCE(sat) 3
"J
'f3 0
" ......
-1 a 1
-01 -03-05 -1 -3 -5 -10 -30 -so -100 -1 '-3 -5 -10 -30 -50 -100 -300
l.,(mA}, COLLECTOR CURRENT Vcs(V), COLLECTOR-BASE VOLTAGE

AM CONVERTER, FM/RF AMPLIFIER OF

LOW NOISE.' TO-92
• High total,power dissipation, (PT=400mW)
"

Ch~racteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVcBO Ic= 1OOIlA, IE=O 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic= 1mA, IB=O 20 V
Emitter-Base Breakdown Voltage BVEBo IE=lOOIlA. Ic=O 4 V
DC Current Gain hFE VcE =5V,lc =lmA 28 90 198
Collector-Emitter Saturation Voltage Vcdsat) Ic=10mA,le=lmA 0.1 0.3 V
Base-Emitter On Voltage VBE (on) VCE=5V,lc=lmA 0.72 V
Output Capacitance COb Vce= 1 OV, IE=O 1.2 1.6 pF
f=lMHz
Current Gain-Bandwidth Product fr VcE=5V, Ic=lmA : 400 620 MHz
5.0
Noise Figure
- NF VcE=5V, Ic= 1.0mA
f=100MHz, Rs=50!l
3.0 dB
hFE CLASSIFICATION
Classification D E F G H I
hFE 28-45 39-60 54-80 72-108 97-146 132-198

·SS9016 NPN EPITAXIAL SILICONTAANSISTOR
STATIC CHARACTERISTic BASE-EMIT,TER ON VOLTAGE

20
18
16
1)110"1·
~"00~ Of=: 1= vel J

IB=90,IIA
.ffi 14
1;-80j.-
5
§,, I I
12 JB=70~A-
I I
Ia-60"A-
1 '0 I
le=50,IIA
1,-40~
1
1
I I, ~O"A
5
,
3
Ie 20JAA
'1
IBj10,uA
0 1
6 8 10 12 14 16 18 20 02 04 06 08 10 12
VcelVI. COLLECTOR-EMITTER VOLTAGE V,,(VI. BASE-EMITTER VOLTAGE

1000 1000 0
t--
500 Vce=5V ~500 0
f--- V",
..
5V
~300 0
300
~i 1000
~
~
§ 100
; 500
~ 300
"g
~a:
50 ,,"
i " ::>
100
30
"'if
l:
5a
~ 30
10 a
05 10 10 30 50 100
lelmAI. COLLECTOR CURRENT lc(mAI. COLLECTOR CURRENT

COLLECTOR-EMITIER SATURATION VOLTAGE
0
7 II
5 - Ic :1018
- f-lIMH~ I
3 iE=O
5
Vce(salJ
3
"" ['-..
r-....
/' 1
.......
Vae(sat)
1 .9
00 1 .5
01 03 0.5 3 10 30 10 30 50 100
lelmAl.- COLLECTOR CURRENT VCO<VI. COLLECTOR-BASE VOLTAGE

AM/FM IF AMPLIFIER, LOCAL OSCILLATOR

TO-92
OF FM/VHF TUNER
• High Current Gain Bandwidth Product 'r=1,100 MHz (Typ)

Storage Temperature Tstg -55"'150 °c
Characteristic Symbol Test C9nditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO Ic= 1 OO"A, IE=O 30 V

Collector-Emitter Breakdown Voltage BVcEo Ic=1.0mA,le=0 15 V
Emitter-Base BreakdQwn Voltage BVEBO IE= 1OO"A, Ic=O 5 V
Collector Cutoff Current ICBO Vce= 12V, 'E=O 50 nA
DC Current Gain hFE VcE =5V, Ic=1.0mA 28 100 198
Cdtlector-Emitter Saturation Voltage VCE(sat) Ic=10mA,le=1mA 0.5 V
Output Capacitance Cob Vce:=10V, IE=O 1.3 1.7 pF
f=1MHz
Current Gain-Bandwidih Product fr VCE=5V, Ic=5mA 700 1100 MHz
hFE CLASSIFICATION
Classification 0 E F G ·H I
hFE 28-45 39-60 54-80 72-108 97-146 132-198
c8 SAMSUNG SEMICONDUCTOR E379


10 1000
I VCE= 5V
1,-:90"A
600
/' IB=80~A
I z
,... 1,-70_A-
I
1,=60"A-
C 300
"...
Z
I W
II!
IB=50JolA II!
=> 100
()
I,=.L_ g
~
II' I
1,=30"q._ i
50
I
1,=20_A_
30
Ie=+-
o 1~
o 9 10 0.6 3 10 30
VcE\Y). COLLECTOR-EMITTER VOLTAGE IdOlA). COLLECTOR CURRENT

2000 10
i
IE 1000
vJJJ w·
~.
g
61--
Ic=101B
3
z
S ~. 1 V,,(sat)
I~ ~
i
o. 6
0.3
~ 300
<f
.i o. 1 V",,(sat) V
~ V >
~ 0.06
I 1 003
100 0.0 1
0.1 0.3 0.5 10 30 0.1 0.3 0.5 10 30
IdOlA). COLLECTOR CURRENT IdmA~ COLLECTOR CURRENT
OUTPUT CAPACITANCE
2.4
fL1M~Z
1--- 1.=0
- 1-
r-
8
o. 4
0
3 10 30 60 100
Vco(V). COLLECTOR-BASE VOLTAGE

PACKAGE DIMENSIONS
SOT-23 'Unit: mm TO-92 Unit: mm
4.33
4.83
--+--+--+---2.54 TYP
1.02 TYP
TO-92S Unit: mm TO-92L Unit: mm·
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0.97 II· 010
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0.41
0.71 'f--'
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PACKAGE DIMENSIONS
TO-126 Unit: mm TO-202 Unit: mm
0.58
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. [;0.93
. 1.44
0.51 1/ - 0. 93 ---l 0.45
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9.67 1.24
1.49
0.75TYP ~~
228 TYP 0.45
'. 0.64
1---+--4.57 TYP
TO-220 Unit:'mm, DISK TR Unit: mm

cf>3,61
TYP_ ~
1.40
18.03
19.03
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4.01 9.82
4.21. 10.58
2.08
2,33
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0.55
2.54 TYP...:!I-_+._.;,5;"::'0i<8
I TYP
c)l~

PACKAGE DIMENSIONS
TO-3P(F) Unit: mm
15.7 5. 3
,3.2 16 .3 5.9
1'-C'l 2.8
;3.6 / .rLti 3.4
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1'-C'l ..
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5.25 0.4
5.65 1 0.6--l 1.3 0.8
11.2
EMBOSSED CARRIER Specification for SOT-23 Unit: mm
1.5±0.1
RO.3MAX
B·B
685
PACKAGE DIMENSIONS
CARRIER TAPE REELS Unit: mm
C! 0
0
N ('II N
+1 +1 +1
0 <Xl
0 '<t .....
<Xl
-<>- ....
~
.~
-<>-
2±0.5
-+-I-8±1.0
TO-92 TAPING SPECIFICATION Unit: mm
6h
P 12.7±0.5
Po 12.7±0.2
P, 3.85±0.5
P, 6.35±0.5
W' 18~~.~
Wo 6±0.5
W, 9±0.5
W, Max. 0.5
H Max. 21
H, Max. 27
Ho 16±0.5
F 5""
-<>,
F,-F, ±0.3
Do 4±0.2
t 0.65±0.2
M C±l .
d 0.46
°d T 3.56
'----Do
L, Min. 2.5
c8 SAMSUNG SEMIC~NDUCTOR 686

PACKAGE DIMENSIONS
T0-92 AMMO PACK Unit: mm

FEED /FLATSIDE
~=~~~~~~~~~~b_ADHESIVE TAPE
:;~~~~~~~~~:::~CARRIER STRIP
~------330±5--------~
•
FLAT SIDE OF TRANSISTOR and ADHE$IVE TAPE VISIBLE
SAMSUNG's AMMO PACK is equivalent to styles A,B,C,D of reel pack depending on which
box-flat is opened and which end of the box the deviCfes sre fed from.
1 AMMO PACK contsins 2000 pcs Transistors. .
c8 SAMSUNG SEMICONDUcrOR
687
NOTES
•
• e·
SAMSUNG SEMICONDUCTOR DISTRIBUTORS
ALABAMA
HAMMOND (205) 830-4764 PETERSON,C.M. (519) 434-3204
4411-B Evangl!l Circle, N.w. 220 Adelaide Street North
Huntsville, AL 35816 London,Ontario,Canada
N6B 3H4
CAUFORNIA
PRELCO (514) 389-8051
ADDED VALUE (714) 259-8258
480 Port Royal St. West
1582 Parkway Loop
Montreal,Quebec,Canada
UnitG
H3L 289
Tustin, CA 92680
ADDED VALUE (619) 278-1990 WESTBURNE IND.ENT.,LTD.

8361 Dlck9(S Street 300 Steeprock Drive (416) 635-2950
Suite 308 Downsview ,Ontario,Canada
San Diego, CA 92111 M3J 2W9
ALL AMERICAN (800) 262-1717

369 Van Ness Way #701 COLORADO
Torrance, CA 90501
ADDED VALUE (303) 422-1701
BELL MICRO (714) 963-0667 4090 Young/ield
18350 Ml Langley Wheatridge,CO 80033
Fountain Valley, CA 92708
CYPRESSJRPS (303) 431-2622
BELL MICRO (408) 434-1150 12441 West 49th Avenue
550 Sycamore Drive Wheat Ridge,CO 80033
Milpitas, CA 95035
•
CYPRESSIRPS (714) 521-5230
CONNECTICUT
6230 Descanso Avenue
Buena Park,CA 90620 JACO (203) 235-1422
384 Pratt Street
CYPRESS/RPS (619) 535-0011 Meriden, CT 06450
10054 Mesa Ridge Ct
Sulte118 JV (203) 469-2321
San Dlego,CA 92121 690 Main Street
East Haven,CT 06512
CYPRESSIRPS (408) 989-2500
2175 Martin Avenue PILGRIM (203) 792-7274
Santa Clara, Ca 95050 60 Beaverbrook Road
Danbury,CT 06810
JACOIDISTEL (408) 432-9290
2880 ZANKER ROAD
SUITE 202 FLORIDA
SAN JOSE, CA 95134 ALL AMERICAN (305) 621-8282
16251 N.W. 54th Avenue
JACOIDISTEL (805) 495-9998 Mlami,FL 33014
2260 Townsgate Road
WesUake Village, CA 91361
HAMMOND (305) 973-7103
PACESETTER (714) 779-5855 6600 N.w. 21st. Avenue
5417 E. L8 Palma Fort Lauderdale,FL 33309
Anahelm,CA 92807
PACESETTER (408) 734-5470

543 Weddel Drive HAMMOND (305) 849-6060
Sunnyvale,CA 94089 1230 W. Central Blvd
OrIando,FL 32802
CANADA GEORGIA
ELECTRONIC WHOLESALERS . HAMMOND (404) 449-1996
1935 Avenue De L'Eglise (514) 769-8861 5680 Oakbrook Parkway
Montreal,Quebec,Canada #160
H4E lH2 Norcross, GA 30093
691
(Continued) .
ILLINOIS MINNESOTA
GBUGOOLD (312) 593-3220 ALL AMERICAN (612) 884-2220
610 Bonnie Lane 8053 E. Bloomington Fwy
Elk Grove Vlllage,lL 60007 Suitel02
Minneapolis,MN 55421
OHM (312) 359-5500 VOYAGER (612)571-7766

746 Vermont Avenue, 5201 East River Road
Palatine,lL 60067 Fridley,MN 55421
QPS (312)884-6620 NEW JERSEY
101 Commerce Dr: fA
GRS ELECTRONICS (609) 964-8560
Schaumburg,lL 60173
600 Penn SI. @ Bridge Plaza
INDIANA Camden, NJ 08102
ALTEX (317) 848-1323 JACO (201) 942-4000
12744 N. Meridian Ottilio Office Complex
Carmel,lN 46032 555 Preakness Avenue
Totowa, NJ 07512
MARYLAND
ALL AMERICAN (301) 251-1205 VANTAGE (201) n7-4100
1136 Tait Street 23 Sebago Street
RockvUle,MD 20853 . Clifton,NJ 07013
JACO (301)995-6620
Rivers Center NEW YORK
10270 Old Columbia Road
Columbia, MD 21046 ALL AMERICAN (516) 981-3935
33 Commack Loop
VANTAGE (301) 995-0444 Ronkonkoma,NY 11779
6925 Oakland Mills Road
Columbia,MD 21045 CAMlRPC (716) 427-9999
2975 Brighton Henrietta TL Road
MASSACHUSETS Rochester,NY 14623
AVED (617) 688-3800 JACO (516)-273-5500
200 Andover Business Park Dr. 145 Oser Avenue
Andover,MA 01810 Hauppauge,NY 11788
GERBER (617) 329-2400 JANESWAY (914) 699-6710
128 Camegle Row 404 Nor1h Terrace Avenue
Norwood, MA 02062 Mount Vernon,NY 10552
JACO (617) 933-7760 JANESWAY (516) 935-1827
222 Andover Street 85 Bethpage Road
Wilmington,MA 01887 HlcksvUle, NY 11801
MAYER,A.W. (617) 229-2255 MICRO GENESIS (516) 273-2600
34 Unnel Circle 215 Marcus Blvd.
Blllerica,MA 01821 Hauppauge, NY 11788
SELECT SALES (617) 821-4no VANTAGE (516) 543-2000
427 Tumpike Street 356 Veterans Memorial Hwy.
Canton, MA 02021 Commack,NY 11725
MICHIGAN NORTH CAROLINA
CALDER (616)698-7400 DIXIE (704) 377-5413
4245 Brockton Drive 2220 South Tryon Street
Grand Raplds,MI 49508 Charlotte,NC 28234
RS ELECTRONICS (313) 525-1155 HAMMOND (919) 275-6391
34443 Schoolcraft 2923 Pacific Avenue
Uvonia,MI 48150 Greensboro,NC 27420
"'qs SAMSUNG SEMICONDUCTOR 692

(Continued)
NORTH CAROLINA (Continued) TEXAS

CYPRESSIRPS (214) 869-1435 "
RESCOIRALEIGH (919) 781-5700
2156 W. Northwest Highway
Hwy. 70 West & Resco Court
Dallas, TX 75220
Raieigh,NC 27612
OHIO JACO (214) 235-9575
1209 Glenville Drive
CAM/RPC (216) 461-4700 Richardson, TX 75080
749 Miner Road
Cleveland,OH 44143 JANESWAY (214) 437-5125
1701 N. Greenville Avenue #906
Richardson, TX 75081
SCHUSTER (513) 489-1400
11320 Grooms Road OMNIPRO (214) 233-0500
Cincinatti,OH 45242 4141 Billy Mitchell
Dallas, TX 75244
SCHUSTER (216) 425-8134 UTAH

20570 East Aurora Road ADDED VALUE (801) 975-9500
Twinsburg,OH 44087 1836 Parkway Blvd.
OREGON West Valley City,UT 84119
CYPRESSIRPS (503) 641-2233 STANDARD SUPPLY (801) 486-3371

15075 S. KoII Parkway 3424 South Main Street
SuitsD Salt Lake CIty,UT 84115
Beaverton,OR 97008
VIRGINIA
•
OREGON (Continued) VIRGINIA ELEC. (804) 296-4184
715 Henry Avenue
RADAR (503) 232-3404 Charlotlsvllle,NC 22901
704 S.E. Washington
Portland,OR 97214 WASHINGTON
PENNSYLVANIA CYPRESSIRPS (206) 483-1144
22125 17th Avenue
CAM/RPe (412) 782-3770 Suitsl14
620 Alpha Drive BothsH,WA 98021
Plttsburgh,PA 15238
PRIEBE (206) 881-2363
14807 N.E. 40th
. SOUTH CAROUNA Redmond,WA 98052
DIXIE· (803) 297-1435 RADAR (509) 943-8336

4909 Pelham Road 292 Torbett #E
Greenvllle,SO 29606 Richland, WA 99352
RADAR (206) 282-251·1

DIXIE (803) 779-5332 168 Westsm Avenue West
1900 Barnwell Street Seattle,WA 98119
.Columbla,SO 29201
WISCONSIN
MARSH (414) 475-6000
HAMMOND (803) 233-4121
1563 S. 101&t. Street
1035 Lowndes Hill Rd. Milwaukee,WI53214
Greenvllle,SO 29607.
693
SAMSUNG SEMICONDUCTOR SALES OFFICES'.. ·U.S.A.
CALIFORNIA ILLINOIS MA~SACHUSETTS
22837 Ventura Blvd. 901 Warrenville Road 20 Burlington Mall Road

~ Suite 305 Suite 120 "Suite~05
Woodland Hills, CA 91367 Usle,ll60532-1359 Burlington, MA 01803
(818) 346-6416 (312) 852-2011 (617) 273-4888
NORTH CAROLINA TEXAS
2700 Augustine Drive 3200 Northline'Avenue 15851 Dallas parkway

Suite 198 Suite 501G, Forum VI Suite 745
Santa Clara, CA 9505~ Greensboro, NC 27408 Dallas, TX 75248-3307
(408) 727-7433 (919) 294-5141 (214) 239-0754
,SAMSUNG SEMICONDUCTOR REPRESENTATIVES

U.S.A. and CANADA
ALABAMA
EMA TEL: (205)536-3044 TERRIER ELEC. TEL: (604) 433-01!i9
1200 Jordan Lane FAX: (205)533-5097 3700 Gilmore Way. l06A FAX: (604) 430-0144
Suite 4 Bum.aby, B.C" Canada
Jordan Center VSG 4Ml
Huntsville,AL 35805
COLORADO
ARIZONA
CANDAL INC. _ TEL: (303) 935-7128
HAAS & ASSOC. INC. TEL: (602) 998-7195 7500 West Mississippi Ave. FAX: (303) 935-7310
77441 East Bulherus Drive FAX: (602) 998-7869 Suite A-2
Suite 300 Lakewood, CO 80226
Scottsdale,AZ 85251
CONNECTlCUT
CALIFORNIA
PHOENIX SALES TEL: (203) 496-7709
QUEST REP INC. TEL: (619) 565-8797 257 MaIn Street FAX: (203) 496-0912
9444 Farnham Sl FAX: (619) 565-8990 Torrington,CT 08790
Suite 107
San Die90,CA 92123 FLORIDA
MEC TEL: (305) 426-8944
SYNPAC TEL: (408) 988-8988
600 W. HiDsbllro Blvd. FAX: (305) 426-8799
3945 Freedom Circle FAX: (408) 988-5041
Suite 300
Suite 650 Deerfield Beach,FL 33441
Santa Clara,CA 95054
MEC TEL: (407) 332-7158
WESTAR REP COMPANY TEL: (714) 835-4711112113 375 S. North Lake Blvd. ' FAX: (407) 830-5436
1801 Parkcourt Plaoe FAX: (714) 835-3043 Suite 1030
Suite 1030 . Altamonte Sprln9s, FL 32701
santa Ana,CA 92701
MEC TEL: (407) 799-0820
WESTAR REP COMPANY TEL: (213) 539-2156 830 North Adantic Blvd. F:AX: (407) 7990923
25202 Crenshaw Blvd. FAX: (213) 539-2584 ' Suite 8401
Suite 217 Cocoa Beach, FL 32931
Torrsnoe, CA 90505
GEORGIA
EMA , TEL: (404) 448-1215
CANADA 8695 Peachtree Ind. BIvd._ FAX: (404) 446-9363
TERRIER ELEC. TEL: (416) 622-7558 Suite 101
. 145 The West MaN FAX: (416) 626-1035 Adanta, GA 30360
Etoblcoke, OntarIo, Canada
M9C lC2

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
U.S.A. and CANADA (Continued)
ILUNOIS
IRI TEL: (312) 967-8430 BAILEY, J.N•• ASSOC. TEL: (614) 262·7274
8lI3O Gross PoInt Road FAX: (312) 967-5903 2679 Indianola Avenue FAX: (614) 262'()384
SkokJe,IL 60076 Columbus,OH 43202
INDIANA BAILEY, J.N•• ASsoc. TEL: (216) 273-3798
1687 Devonshire Drive FAX: (216) 225-1461
STB & ASSOC.'NC. TEL: (317) 844-9227 Brunswlck,Of-! 44212
3003 E. 961h St FAX: (317) 844-1904
Sultel02
OREGON
Indianapolls,IN 46240
EARL & BROWN CO. TEL: (503) 643-5500
MARYLAIID 9735 S.W. Sunshine Ct. FAX: (503) 644-9230
ADVANCED TECH SALES TEL: (301) 789-9360 SulteSOO
809 Hammonds Feny Rd. FAX: (301) 789-9364 Beaverton,OR 97005
Suite D
Unthloum,MD 21090
PENNSYLVANIA
RIYCO JANUARY INC. TEL: (215) 631-1414
MASSACHUSETTS RJI Building FAX: (215) 631-1640
JODAN TECHNOLOGY TEL: (617) 863-8898 78 Soulh Troopec Road
n
1 BedIord St FAX: (617) 863-0462 Norristown,PA 19403
lexington, MA 02173
PUERTO RICO
MICHIGAN
DlGIT·TECH
JENSENC.8. TEL: (313) 643-0506 P.O. BOX 1945 TEL: (809) 892-4260
2145 Crooks Rd. FAX: (313) 643-4735 CALLE CRUZ #2 FAX: (809) 892-3366
Troy,MI48084 BAJOS, SAN GERMAN
•
MINNESOTA SOUTH CAROUNA
IRI EMA TEL: (803) 233-4637
1120 East 80Ih Street TEL: (612) 854-1120 210 W. Stone A\I8I1Ue FAX: (803) 242-3089
Bloomington, MN 55420 FAX: (612) 654-8312 Greenville, SC 29609
NEW JERSEY TEXAS

NECCO TEL: (201) 461·2789 S.W. SALES INC. TEL: (915) 594-8259
2460 Lemoine Avenue FAX: (201) 461-3857 2267 Trewood, Bldg. E3 FAX: (915) 592'()288
Ft. Lee,NJ 07024 EI Paeo, TX 79935
NEW YORK VlELOCK ASSOC. TEL: (214) 881-1940

720 E. Pari< BlIId. FAX: (214) 423·8556
T-SaUARE TEL: (315) 463-8592 SultelO2
6443 Ridings Road ",AX: (315) 463·0355 Plano,TX 75074
Syracuse, NY 13206
VIELOCK ASSOC. TEL: (512) 345-8498
9600 Great Hills Trail FAX: (512) 346-4037
T-SaUARE TEL: (716) 924-9101 Sultel50-W
7353 Victor-Pittsford Road FAX: (716) 924-4946 Austin,TX 78759
Victor, NY 14564
UTAH
NORTH CAROLINA ANDERSON & ASSoc. TEL: (801) 292-8991
270 South MaIn, #108 FAX: (801) 298-1503
GODWIN & ASSoc. TEL: (919) 878-8000 Bountiful, UT 84010
1100 Logger CI. FAX: (1119) 878-3923
Suite B 102 WASHINGTON
RaleIgh, NC 27809 EARL & BROWN CO. TEL: (206) 885-5064
GODWIN & ASSOCIATES TEL: (704)549-8500 2447-A 152nd Ave. N.E. FAX: (206) 885-2262
2812 oak leigh Drive FAX: (704) 549-9192 Redmond,WA 98052
Charlotte, NC 28213
WISCONSIN
OHIO IRI TEL: (414) 259-0965
BAILEY, J.N. & ASsoc. TEL: (513) 687-1325 631 Mayfair
129 W. Main Street FAX: (513) 687-2930 Milwaukee, WI 53226
New Lebsnon,OH 45345
c8 SAMSUNG SEMICONDUcrOR i
695
EUROPE
AUSTRIA NETf(ERLANDS
ABRAHAMCZIK + DEMEL Tel:(0222) 857661 BV HANDELMIJ"MALCHUS Tel:(010) 373777
GesmbH & Co. KG Tlx: 0134273 Fokkerslrett 511-513 'Tlx: 21598
Elchenslrabe 58-6411 Fax: 833563 Poslibus 48
A-ll20 Vienna NL-3100 AA Schledam
BELGIUM SPAIN
NEWTECINTERNAT~L Tel:(02) 7250900 SEMICONDUCTORES 8.A. Tel: (93) 2172340

Chaussee de lowaln 186 Tlx: 25820 Ronda General MiInt. 240 Tlx: 97787 SMCO E
1940 WoIuwe-St-Elieme Fax:(02) 7250813 Ban:elona-6 Fax: 2175698
Leuvensestaenwet 185
194Q-Sln1-8Ievens-WoIuwe SANTOS DEL VALLE, SA Tel:(91)4468141/44
GaDleo. 54. 56 Tlx: 42615 LUSA E.
FINLAND 28015 Madrtd
INSTRUMENTARIUM Tel:(358)0528432O SWEDEN

ELEKTRONIIKKA Tlx: 124426
P.O. Box 64,VIUkka Fax:(358)0524986 NORDISK ELEKTRONIK AB Tel:(08)7349770
SF'()2631 Espoo Huwdstagatan 1 Box 1409 Tlx: 10547
Helsinki Finland 5-17127 Solna Fax:(08) 272204
FRANCE SWITZERLAND
ASIAMOS Tel: (1) 47601255 PANATELAG ,Tel:(058)275275

BaUment EVOUC 1 Tlx: 613690F Hardslrebe 72 Tlx: 58068
155 Boulevard de Valmy Fax:(1)47601562 CH-5430 We\tlngen Zuri~ Fax: (056) 271924
92705 Colombas, Franc:e
UNITED KINGDOM
GERMANY (WEST)
KORD DISTRIBUTION LTD. Tel: 0276 685741
SILCOM ELEKTRONICS Tel: (02161) 60752 Watchmoor Road. cafflbet1ey Tlx: 859919
Neusser Sir. 336-338 Tlx: 852189 Surrey GU153AO KOROISG.
0-4050 Muchengladbach
BYTECH LTD. Tel: 0344 482211
MICRONETICS VERTRIEB8- Tel: (07159) 6019 2 The Western Centre Tlx: 648215
GESELLSCHAFT Tlx: 724708 Westem Road
ELEKTRONISCHER Bracknell Berkshire RG121RW
BAUElEMENTS and SYSTEME GmbH
Weil dar S1adIer SIrabe 45 RAPID SILICON Tel: 0494 26271
7253 Rennlngen 1 Sales hot line: 0494 442266
Rapid House Denmark Street Tlx: 837931
ING. THEO HENSKES GmbH Tel:(0511) 865075 High Wycombe Fax: 0494 21880
LaalZener Sir. 19 Tlx: 923509 Bucki1ghamshlre HP 11 2 ER ' '
Postfach 721226 Fax: 876004
30000 Hannowr 72
ASTRONIC GmbH TeI:(089) 309031

Wlnzerer SIr. 47d Tlx: 521687
8000 Munchen 40 Fax:(089)3006001
ITALY
MOXEL 8.P..A. Tel:(02) 61290521

20092 Clnleelo BaJsamo (M) Tlx: 35a045
VIa C. Frova. 34 ' Fu: (02) 6172582
DIS. EL 8.R.L Tel: (220) 1522345

10148 Torino Tlx: 215118
VIa Ala d Slura 71/18

SAMSUNG SEMICONDUCTOR REPRESENTATIVES '
ASIA
HONG KONG JAPAN

AV. CONCEPT ADO ELECTRONIC INDUSTRIAL CO., LTD.
Hunghom Commercial Centre, 7th FL" SASAGE BLDG. 4·6 SOTOKANDA
Room 708, Tower A 7/F 2·CHOME CHIYODA·KU, TOKYO 101, JAPAN
37·39, Ma Tau Wai Road Tel: 03·257·1618
Hunghom, Kowloon, Hong Kong Fax: 03·257·1579
Tel: 3·629325"'6, 3·347722"'3
INTERCOM PO INC . .
Tlx: 52362 ADVCC HX
Fax: 852·3·7234718 IHI BLDG, 1·6·7, SHIBUYA, SHIBUYA·KU
TOKYO 150 JAPAN
PROTECH COMPONENT Tel: 03·406·5612
FLAT 3 10/F WING SHING IND. BLDG. Fax: 04·409·4634
26 NG FONG ST, SANPOKONG
CHEMI-CON INTERNATIONAL CORP.
KOWLOON, Hong Kong
Tel: 3·255106 MITSUYA TORANOMON BLDG.
Tlx: 38396 PTLD HX 22·14, TORANOMON 1 CHOilAE
Fax: 852·3·7988459 MINATO"KU TOKYO 105, JAPAN
Tel: 03·508-2841
TRIATOMIC ENTERPRISES Fax: 03·504·0566
Room 2001 A Nan Fung Center
TOMEN ELECTRONICS CORP.
264·298, Castle Peak Road
Tusen Wan, New Territories. 1·1, USCHISAIWAI·CHO 2 CHOME
Tel: 0·4121332 CHIYODA·KU TOKYO, 100
Fax: 0·4120199 Tel: 03·506·3473
Fax: 03·506·3497
•
MATSUDA ELECTRONICS
DIA SEMICON SYSTEMS INC.
'6/F CHUNG PAK Commercial BLDG.
WACORE 64 1·37·8 SANGENJAYA
2 Coo Yuen SI. Yau .Tong Bay
SETAGAYA·KU TOKYO 154 JAPAN
Kowloon, Hong Kong
Tel: 03·487·0386
Tel: 3·7276383
Fax: 03·487·8088
Tlx: 42349 MAZDA HX
Fax: 852·3·7989661 RIKEI CORP.
JERS ELECTRONICS COMPANY NICHIMEN BLDG. 2·2·2 NAKANOSHIMA
KITA·KU OSAKA 530 JAPAN
14/F, Houtex Industrial BLDG.
Tel: 06·201·2081
16 Hung To Road, Kwan Tong Kowloon
Fax: 06·222·1185
Hong Kong
Tel: 3·418311·8 SINGAPORE
Tlx: 55450 JERSE HX
Fax: 852·3·438712 GEMINI ELECTRONICS PTE LTD.
100, UPF·R CROSS STREET
TAIWAN #09·08 OG BLDG. SINGAPORE 0105
YOSUN INDUSTRIAL CORP. Tel: 65·5351777
Tlx: RS 4281 9
MIN SHENG Commercial BLDG.
Fax: 65·5350348
10F., Noe 481, MIN·SHENG EAST RD.,
TAIPEI;TAIWAN, R.O.C. . INDIA
Tel: 501·0700 (10 UNES)
Tlx: 26777 YOSUNIND MURUGAPPA ELECTRONICS LTD.
Fax: (02) 503·1278 PARRRY HOUSE 3rd floor 43 Moore. Street
MADRAS 600 001 India
KENTOP ELECTRONJCS CO., LTD.
Tel: 21019/31003
5F·3, 21st CENTURY BLDG., Tlx: 041·8797 HIL IN.
NO. 207, TUN·HWA N. RD" TAIPEI
Tel: (02) 716·1754, '716·1757
Fax. (02).717·3014
697
KOREA
NAEWAE ELECTalC co., LTD. NEW CASTLE
Room 403, 2200ng Sumln Bldg, SEMICONDUCTOR CO., LTD.
#16·1, Hangangro-2ka, Yongsanku, 123-1, Joo Kyo Dong
Seoul Korea. . Joongku, Seoul Korea
Tel: 701·7341"'5 Tel: 274-3220, 3458
Fax: 717;7246
HANKOOK SEMICONDUCTOR
'SAMSUNG 1131-9' Kurodong, Kuroku,
LIGHT-ELECTRONICS CO., LTD. Seoul Korea
149.Jang Sa Dong Tel: 868-0277"'9
Jongroku, Seoul Korea Fax: 868-4604
Tel: 744-2110, 2611,-6187/8
Fax: 744-4803
SEGYUNG ELECTRONICS
182-2 Jang Sa oOng
Jongroku, Seoul Korea
Tel: 272·6811 "'6
Fax: 273-6597

=8 ~~UNG
HEAD OFFICE:
9/10FL. SAM SUNG MAIN BLDG . TELEX : KORSST K27970
250, 2-KA, TAEPYUNG-RO , TEL : (SEOUL) 751-2114
CHUNG-KU , SEOUL , KOREA FAx : 753-0967
C.P.O. BOX 8233
BUCHEON PLANT:
82-3 , DODANG-DONG , TELEX KORSEM K28390
BUCHEON, KYUNGKI-DO, KOREA TEL (SEOUL) 741 -0066 , 662-0066
C.P.O. BOX 5779 SEOUL 100 FAX : 741-4273
KIHEUNG PLANT:
SAN #2>1 NONGSUH-RI, KIHEUNG-MYUN TELEX : KORSST K23813
YONGIN-GUN, KYUNGKI-DO , KOREA- TEL (SEOUL) 741 ,0620/7
C,P.O. BOX 37 SUWON FAX : 741-0628
GUMI BRANCH :
259, GONDAN-DONG, GUM I, TELEX : SSTGUMI K54371
KYUNGSANGBUK~O , KOREA TEL : (GUMI) 2-2570
FAX : (GUMI) 52-7942
SAMSUNG SEMICONDUCTOR INC .:

3725 NORTH FIRST STREET TEL : (408) 434-5400
SANJOSE, CA 95134-1708, USA TELEX : 339544
FAX : (408) 434-5650
HONG KONG BRANCH :

13FL. BANK OF AMER ICA TOWER TEL: (5) 21-0307/9 , 21-0300, 23-7764
12 HARCOU RT ROAD , HONG KONG TE LEX 80303 SSTC HX
FAX : (5) 84-50787
TAIWAN OFFICE:
RM 11 02, I.T. BLDG, NO. 385 TEL : (2) 777-1044 /5
TUN-HWA S, RD, TAIPEI , TAIWAN FAX : (2) 777-3629
SAMSUNG JAPAN CO.:

RM 3108 , KASUMIGASEKI BLDG. TEL : (03) 581-1816/7585
2-5 , 3-C HOME KASUMIGASEKI TELEX : J24244
CHIYODA-KU , TOKYO, 100 JAPAN FAX (03) 581-7088
SAMSUNG SEMICONDUCTOR EUROPE GMBH :

MERGENTHATER ALLEE 38-40 TEL : 0-6196-90090
6236 ESCHBOR,N, WIG. FAX: 0-6196-900989
TL X : 4072678 SSED
SAM SUNG (U.K.) LTD.:

6 FL. VICTORIA HOUSE SO\JTHAMPTON TELEX : 297987 STARS LG PRINTED IN KOREA
ROW W.C. 1 LONDON . ENGLAND TEL 831-6951/5
JULY, 1988
FAX : (01) 430-0096 ,.

1988 Samsung Transistor Data Book Vol 1 PDF

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1988 Samsung Transistor Data Book Vol 1 PDF

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c8 SAMSUNG

I. Semiconductor Product Guide

Vol. 2: Bipolar Power TR

III. Linear IC Data Book

IV. MOS Product Data Book

I. QUALITY & RELIABILITy.......................................... 15

"II. PRODUCT GlHDE

III. DATA SHEETS

IV. PACKAGE DIMENSIONS .......................................... 681

V. SALES OFFICE and MANUFACTURER'S

I. QUAUTY & RELIABILITY

II. PRODUCT GUIDE

III. DATA SHEETS

IV. PACKA~E DIMENSIONS

Device Page Device Page Device . page

Device Page Device Page Device Page

BCX71G 494 MMBC1009F3 509 12. MPS Series

Device Page' Device Page Device Page

• HTRB 1000HR • HTRB 1000HR • HTRB 500HR • Same as

Fig. 1. Qualification Programs.

4.1 New product qualification test items

Sample ACC. Reference

4.2 . New process, wafer fabrication qualification

4.3 Package Sub-Assembly Qualification

Note) • N/A: not available

5. Product Reliability (Quality Conformance) Monitors

Quality Conformance Program

• Every Fab Lot • 1 Processlmonth • Once/6 mo. per device

• HTRB .. 1 68HR • HTRB 168HR • HTR!3 1000HR

Fig. 2. Quality Conformance Program

(PRT/DRT Product Stress Methodologies)

2. ILT (Infant Life Test) Frequency: 1 Process/month

.ciS SAMSUNG SEMICON'DUCTOR .20

~, DRT (Device Reliability Test)

No•. Test Item test Condition Sale LTPO* ''':-:''''''

. High Temperature Ta=Tj(max)

High Temperature Reverse Bias (80% max. BVCBO, 150 ° C, static)

Intermittent Operating Life (PMAX, 25°C, 2 min on/2 min off)

Pressure Cooker Test (Unbiased, 121°C, i 5 PSIG, 100% R.H:)

High Temperature Storage (Unbiased, 150°C)

Temperature Cycling (Unbiased, -65°C to +150°C, air) .

Thermal Shock (Unbiased, -65°C to +150°C, liquid)

Resistance to Solder Heat (Unbiased, 26.0°C, 10 sec)

Meehan.ical Shock (Unbiased, 1500g, Pulse=0.5msec)

Variable Frequenc~ Vibration (Unbiased, Rarige=100 to 2000.Hz) .

Constant Acceleration (Unbiased, 10kg to 20kg)

8. Relative Stress Comparisons

ciS SAMSUNG SEMICONDUcrOR 22

Comparison of Reliability Test Methods

Comparison of Reliability Test Methods (continued)

9. Reliability Test Results

9.1 Long Term Life Test Results

9.2 Eriv.ironmental Test Resutls

10. Product' Outgoing Quality Levels

Samsung Product Electrical AOQ levels.

Product Family 1983 1984 1985 1986 19~7

Samsung Product Visual/Mechanical AOQ Levels

Product Family 1983 1984 ·1985 1986 1987

.c8 SAMSUNG S~MICONDUCTOR 26

Note: Total=Electrical + Visual/Mechanical

Fig. 3. Total AOQ Levels

1. SMALL SIGNAL TRANSISTORS

MMBTA06(lG) MMBTA56(2G) 80 0,5 1 100 50 100 10 0.25 2 10 100