MOS FIELD EFFECT POWER TRANSISTOR 2SJ302, 302-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ‘The 2S.J302 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES © Low On-state Resistance Poston) $0.10 (Vos = ~10 V, lb = -8 A) Poston! $ 0.24.2 (Vos = ~4 V, lo = -6 A) © Low Css Cise = 1.200 pF TYP. © Built-in G-S Gate Protection Diode QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ts = 25 °C) Drain to Source Voltage Voss 60 V Gate to Source Voltage Voss -20,410 Vv Drain Current (DC) loo «16 \ Drain Current (pulse) loucet F640 A Total Power Dissipation (Te = 25 °C) Pr 7 OW Channel Temperature Tos 160°C ‘Storage Temperature Tag -85 to +150 °C PWS 10s, Duty Cycle 1% PACKAGE DIMENSIONS _ pe gf ities yy MO 02 mag [PIECE 4.Fin (Drain) Deahigy Body Dede Gat F Gate Protecton Psourcets) Booce Document No. TC-2485 (OD.No, 16-7548) ‘ete Publishes gut 1989 M PriteinJopen © NEC Corporation 1999NEC 2SJ302, 302-Z ELECTRICAL CHARACTERISTICS (Ts = 25 °C) ‘CHARACTERISTIC SyMeOL | MIN. | TP. [ MAX | UNIT | _ TEST CONDITIONS Drain to Source On-state Resistance Rove 7 | 100 | ma | Ve--10v,b--6A Drain to Source On-state Resistonco Rosie 730 | 240 | ma | Vau-s0v,b=-6A Gate 10 Source Cutoff Voltage Verwn | 10 =20 | V_| Vo=-10V,b=-1ma Forward Tranefer Admitonce at | 80 S| Vor=-10V,b=-8A Drain Leakage Current toes =10__| wa _| Vor=-60V, Voo=0 (Gate 10 Source Leakage Current eee Ho | sa | Venn ¥16V, eno Input Cepacitance Gm 1200 eee ‘Ouiput Capacitance Con 670 pF | Vor=0 Revorso Transfer Cepacitance Con 290 oF | fo 1MHe “Turn-On Delay Time te 30 mae eee Rise Time . 170 ns] Voo= 20 Turn-Off Delay Time tain 180 ns_| =-8ARo= 100 Fall Time A 130 i | cee Total Gato Charge Oe 2 nc Gate to Source Charge ‘es 3 ne Gate 0 Drain Charge O20 7 ne Diode Forward Voltage Veo 10 v Reverse Recovery Time tw 110 ns_| W=-t6A, Veo =0 Reverse Recovery Charge On 220 nc | _dildt = 50 Ans Test Circuit 1 : Avalanche Capability Test Circuit 2 : Switching Time a a —— a : on} t he, ouf Tom Po@ z:00 iE wh a] 2 ie - ic fo | 2% oe tame | het ° + + tate 18 Dury Cyte 1 96NEC 2SJ302, 302-Z TYPICAL CHARACTERISTICS (Ts = 25 °C) BERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA. co ASE TEMPERATURE 1 * 1 = Oa 1 80 i § 80 g 3 3 © é 3 5 oo 8 4 - 4 3 : & a) e™ 5 0% 6B) 100 120 140160 02040 @0 60 100 120140 160 Te~Cose Temperature = © To~ Case Temperature DRAIN CURRENT vs. FORWARD BIAS SAFE OPERATING AREA go __BRAIN TO SOURCE voLTAGE 100 een: pies Ly “50 Vers 30V < i ae 5 é 8 -0 3x & & i 8 -20 7 2 =10| =I =10 =100 ° “5 =i0 \Voe= Din to Source Votage -V ‘or Drain o Source Voge -V TRANSFER CHARACTERISTICS ee weet} Pulsed < § -0 é 2 ° 5 =10 =15 ‘Vos ~ Gate to Source Voltage -Vyal Forward Transfer Admittance ~ $ Rosi - Din to Source On-State Resistance - md 109) 10} oa “on 2SJ302, 302-Z ‘TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000, 10] on co. 10n 100m ‘a( — Transient Thermal Resistance — CW 10m PW Pulse Wieth—s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Vos =-10 Pulsed 10) =10 lo~ Drain Curent — A DRAIN To SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 10 le Drain Current - A, 100 smo = Drain to Source OnState Resistance - md Veron ~ Gate to Source Cutoff Voltage ~ V 7m Fry = 65:3 CW, Fon = 1.67 CW} Pulsed 10 1001000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed eee. Ves ~ Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. =20 CHANNEL TEMPERATURE Vor = 10) box ma 20 “10 ° 50 0 50 100 Tar Channel Temperature =" 150NEC sins ~ Drain to Source On-State Resistance - @ Ca, Ca, Cen Capacitance - pF Ver ~ Drain to Source Voltage ~ V DRAIN TO SOURCE ON-STATE RESISTANCE ‘vs. CHANNEL TEMPERATURE. fel aatdy 05] AS a 0.10) “ 4 oss 2 ooo oa Tas Chanel Tonpenee capacrance onan TO Snes so son 1 eee ie Da ose ne-¥ aac nour cuanacrensres zee Lt co} ry 0 0 © +0 o 10 ° 2 30 4 80 60 70 4 Gate Charge -aC ‘Vor ~ Gate to Source Voltage -V 2SJ302, 302-Z ‘SOURCE TO DRAIN DIODE FORWARD VOLTAGE ko = Diode Forward Current A Pulsed 0 0s 10 15 Vso ~ Soutce to Drain Voltage - V ‘SWITCHING CHARACTERISTICS 1009, By je 100 ; { 10) i Vere ; Reo on 1.0 =10 100 lo Drain Curront— A REVERSE RECOVERY TIME vs, DIODE FORWARD CURRENT 1000 iat = 60 As = Nes =0 eg boo 8 10 1] 19) 10 100 lr Diode Forward Curtent A,2SJ302, 302-Z las —Single Avalanche Current - A, SINGLE AVALANCHE CURRENTvs. INDUCTIVE LOAD. 100, Ve Starting Ta = 25°C 1m tom | Inductive toad —H 100m Ess Single Avalanche Energy — mJ 280 240 160 120 40 ° 25 «60~SCSSSC«SNOSC«*GSCSC*SO SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE Stating Ta ~ Starting Channel Temperature ~NEC 2SJ302, 302-2 Reference ‘Application note name No. ‘Safe operating area of Power MOS FET. TEA-1034 ‘Application circuit using Power MOS FET. TEA-1035 ‘Quality control of NEC semiconductors devices. TEL202 Quality control guide of semiconductors devices. ‘MEI-1202 ‘Assembly manual of semiconductors devices. 111207NEC 2SJ302, 302-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document, NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by o arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. ‘The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact, ‘our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Trafficcontrol systems, Antidisaster systems, Anticrime systems, ete. Ma 28