Professional Documents
Culture Documents
May 2006
UniFET TM
FDPF33N25
250V N-Channel MOSFET
Features Description
• 20A, 250V, RDS(on) = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect
• Low gate charge ( typical 36.8 nC) transistors are produced using Fairchild’s proprietary, planar
• Low Crss ( typical 39 pF) stripe, DMOS technology.
GD S TO-220F
FDPF Series
S
Thermal Characteristics
Symbol Parameter Min. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 1.32 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.67mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2 www.fairchildsemi.com
FDPF33N25 Rev A
FDPF33N25 250V N-Channel MOSFET
Typical Performance Characteristics
2 VGS 10
2
10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
1
10 o
150 C
o
25 C
o
-55 C
* Notes :
0
* Notes : 1. VDS = 40V
10 1. 250μs Pulse Test
o
2. 250μs Pulse Test
2. TC = 25 C
0
10
-1 0 1 2 4 6 8 10 12
10 10 10
0.25
2
10
Drain-Source On-Resistance
0.20
IDR, Reverse Drain Current [A]
VGS = 10V
0.15
RDS(ON) [Ω],
1
10 o
150 C
0.10 o
25 C
VGS = 20V
0.05 * Notes :
1. VGS = 0V
o
* Note : TJ = 25 C 2. 250μs Pulse Test
0
0.00 10
0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
12
4000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 50V
Coss = Cds + Cgd 10
Crss = Cgd VDS = 125V
VGS, Gate-Source Voltage [V]
Ciss
6
2000
4
* Note ;
1000 1. VGS = 0 V
Crss 2. f = 1 MHz 2
* Note : ID = 33A
0 0
10
-1 0
10 10
1
0 10 20 30 40
3 www.fairchildsemi.com
FDPF33N25 Rev A
FDPF33N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
1.2 3.0
Drain-Source Breakdown Voltage
2.5
Drain-Source On-Resistance
1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)
2.0
1.0 1.5
1.0
0.9 * Notes :
1. VGS = 0 V
2. ID = 250 μA * Notes :
0.5 1. VGS = 10 V
2. ID = 10 A
0.8
-100 -50 0 50 100 150 200 0.0
-100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
20
2
10
100 μs
1 ms
ID, Drain Current [A]
10 ms
1
10 100 ms
Operation in This Area 10
is Limited by R DS(on) DC
0
10
* Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]
0
10
D =0.5
ZθJC(t), Thermal Response
0.2
0.1
-1
10
0.05 PDM
0.02 t1
t2
0.01
-2
10 * N otes :
o
single pulse 1. Z θ JC (t) = 1.32 C /W M ax.
2. D uty Factor, D =t 1 /t 2
3. T JM - T C = P DM * Z θ JC (t)
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
4 www.fairchildsemi.com
FDPF33N25 Rev A
FDPF33N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
5 www.fairchildsemi.com
FDPF33N25 Rev A
FDPF33N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6 www.fairchildsemi.com
FDPF33N25 Rev A
FDPF33N25 250V N-Channel MOSFET
Mechanical Dimensions
TO-220F
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20
3.30 ±0.10
(7.00) (0.70)
6.68 ±0.20
15.87 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47
9.75 ±0.30
0.80 ±0.10
(3
0°
)
#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20
9.40 ±0.20
7 www.fairchildsemi.com
FDPF33N25 Rev A
FDPF33N25 250V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ PowerEdge™ SuperFET™
ActiveArray™ FASTr™ LittleFET™ PowerSaver™ SuperSOT™-3
Bottomless™ FPS™ MICROCOUPLER™ PowerTrench® SuperSOT™-6
Build it Now™ FRFET™ MicroFET™ QFET® SuperSOT™-8
CoolFET™ GlobalOptoisolator™ MicroPak™ QS™ SyncFET™
CROSSVOLT™ GTO™ MICROWIRE™ QT Optoelectronics™ TCM™
DOME™ HiSeC™ MSX™ Quiet Series™ TinyLogic®
EcoSPARK™ I2C™ MSXPro™ RapidConfigure™ TINYOPTO™
E2CMOS™ i-Lo™ OCX™ RapidConnect™ TruTranslation™
EnSigna™ ImpliedDisconnect™ OCXPro™ μSerDes™ UHC™
FACT™ IntelliMAX™ OPTOLOGIC® ScalarPump™ UniFET™
FACT Quiet Series™ OPTOPLANAR™ SILENT SWITCHER® UltraFET®
Across the board. Around the world.™ PACMAN™ SMART START™ VCX™
The Power Franchise® POP™ SPM™ Wire™
Programmable Active Droop™ Power247™ Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I19
8 www.fairchildsemi.com
FDPF33N25 Rev A