TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. © 1 Chip Dual Type. © Recommended for First Differential Stages of DC Amplifiers. © Very High [Ypl [Ypel=20mS U1yp.) (Vps-10V, Vas—0, f—1kHe, Iygg—8imd) © Good Pair Characteristics © High Breakdown Voltage : V@ps=~50V (Min.) .5AB (Typ.) OV, Ip=1mA, Rg=1k0, f=1kHz) 1.0nA (Max.) (Vgg= -30V) © Very Low Noise : NF ps © High Inpat Impedance: Iggs: © Complementary to 283109 | RAW 1 5. sounce 2 3. SOURCE 1 7. DRAIN 2 SUBSTRATE (ote2) MAXIMUM RATINGS (Ta = 25°C) JEDEC = IAS = CHARACTERISTIC sympot | ravine | unr [-OSo, —paemia Gate-Drain Voltage Vens V_| Weight : 037g (Typ. Gate Current a mA Drain Power Dissipation Pp 200 | mW Tunction Temperature Ty 125 °c Storage Temperature Range Tax | —55~125 [°C sau RB tl Seka leg ae aeatahlse nae tere AST es Ban ld abe Serna scrieieles etngeceespes Pees secrecy nid pamseer an ans et on (© The tomaton, cored Farh feered on 32 au. forthe appatons of ou produc, No repnaity is agumed, by TORMBA DirOHAT oy nga lee rdf "B ene de Se a as BUEN ha eR we NT grated Plo'iwmaton cerainod hares &tajert change wihar-nonce 2° uA CORPORATION o hes 7997-04-10 15TOSHIBA 2SK389 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION —_| MIN. | TvP. |ax. | UNIT] Gate Cut-off Current Tass Vas= —80V, Vps=0 — | = [-t0 [na Gate Drain Breakdown _ Voltane Vpryans | Vns=0, Ig=-1008 -50) — | — | v Drain Current Ings (Note D | Vpg=10V, Ves=0 26| — | 20| ma Ipss/Ipss Drain Current Ratio Vps-10V, Vos~0 os -|- * (smal) cargo | “PS ss Gate-Source Cutoff Voltage | Vas(orr) | Vps=10V, Ip=01nA _[-0.15] — |-20[ V Forward Transfer Vps=10V, Vag=0 Admittance Nt kHz, Ipgs=8mA 8) 20 | — | 8 Forward Transfer Tali¥e | Vps=10V, Ves=0, 09 Admittance Ratio (email) args) Ke —|— Gate-Souree livggi—Vasall Vps=10V, Ip=1ma - 20 | mv Input Capacitance Cis Wps=10V, Vos=0, = || - | Reverse Transfer Capacitance Crss — |s5|— | oF Vps=10V, Rg=1ka NF) oid feime — | 15] 10} a Noise Figure Vos=i0V, Rg=ikt DS: = NF(@) een feaie 05} 2 | aB Note 1 : Ingg Classification GR:2.6~6.5mA, BL:6~12mA, V:10~20mA Note 2 : Use the substrate lead with open. 7997-04-10 2/5TOSHIBA 2SK389 STATIC CHARACTERISTICS ‘eID = Vos (LOW VOLTAGE REGION) 3 couuon sounce NON SOURCE i a 3 fae E 2 z 5 4 j 2 a | tar ar ¢ aa ‘GATESOURCE DRADXSOURCE VOLTAGE DRAINSOURCE VOLTAGE. Ys «¥) voltae Ves, > vos Ip - Vos 16 [eel osnwon sounce Yas=0¥ 23 Inssraen ewe z : In 8 Eg 2 £ ge 20 1 Bs see Lin, 2 2 a a ag g “ea + — a GATESOURCE VOLTAGE Vos «) DRAIN CURRENT 1p. tna) 0 Mol = Toss, 1 Vasorr) ~ Iss gy 1 H p= i 1 0 2 ee ke couow source Be] toss = ¥os=10¥ BE od toss: Yos=10¥ = Vos-0 Be 5 Prd Yosesoy - Yosiom + 2 Yas: & 3 rethtte £ g nemo 3 neve DRAIN CURRENT. pgs cna) DRAIN CURRENT Ings cna) 7997-04-10 3/5TOSHIBA 2SK389 Crss - VoD Ciss - Vs. 8 ‘COMMON SOURCE COMMON soURCE i p & ves-0 é 1 rei e 5 a i é i goa E 5 GATEDRAIN VOLTAGE Yap £ 100m, Tosx ~ Vos os 1 . 16 7 m sno conan sence F=Tinnionn DRAIN SOUNCE VOLTAGE Yog. detente * En - 100) OSX aa 1 iD 24 8 comMON SOURCE § en & nee B nl ba B ad 2 0 25 sont zg = sa 2 5 z * \ a a DRAINSOUNCE VOLTAGE. Yog. DRAIN CURRENT 1p. a NP = Ip NP ~ vos. common vounce como source a a : — a a a DRA CURRENT Ip Ga DRAMNSOURCE VOLTAGE. Yog. & 7997-04-10 4/5TOSHIBA 2SK389 Ne - 1 Ra 10 eonaow sone common suc og-t6¥ A vneeiey € jip=tma € Ip= ima g 3 E retote zB 4 A a Ke g 2: OS [> Se 2 oe a a a st sounce meseravcr 29 (0) REQUENCY fay 7997-04-10 5/5