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DATA SHEET
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M3D119
BZD23 series
Voltage regulator diodes
Product specification 1996 Jun 10
Supersedes data of October 1991
Philips Semiconductors Product specification
voltage range:
6.2 to 430 V for 45 types Fig.1 Simplified outline (SOD81) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Ptot total power dissipation Ttp = 25 °C; lead length 10 mm;
BZD23-C3V6 to -C6V8 see Figs 2 and 3 − 2.0 W
BZD23-C7V5 to -C510 − 2.5 W
Ptot total power dissipation Tamb = 55 °C; see Figs 2 and 3;
BZD23-C3V6 to -C6V8 PCB mounted (see Fig.7) − 1.0 W
BZD23-C7V5 to -C510 − 1.0 W
PZSM non-repetitive peak reverse tp = 100 µs; square pulse;
power dissipation Tj = 25 °C prior to surge; see Figs 4 and 5
BZD23-C3V6 to -C6V8 − 300 W
BZD23-C7V5 to -C510 − 300 W
PRSM non-repetitive peak reverse 10/1000 µs exponential pulse (see Fig.8);
power dissipation Tj = 25 °C prior to surge
BZD23-C7V5 to -C510 − 150 W
Tstg storage temperature
BZD23-C3V6 to -C6V8 −65 +200 °C
BZD23-C7V5 to -C510 −65 +175 °C
Tj junction temperature
BZD23-C3V6 to -C6V8 −65 +200 °C
BZD23-C7V5 to -C510 −65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
1996 Jun 10 3
Philips Semiconductors Product specification
1996 Jun 10 4
Philips Semiconductors Product specification
1996 Jun 10 5
Philips Semiconductors Product specification
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 10 6
Philips Semiconductors Product specification
GRAPHICAL DATA
MGD522 MGD523
3 3
handbook, halfpage handbook, halfpage
Ptot Ptot
(W) (W)
2 2
1 1
0 0
0 100 200 0 100 200
T (°C) T (°C)
Fig.2 Maximum total power dissipation as a Fig.3 Maximum total power dissipation as a
function of temperature. function of temperature.
MGD524 MGD525
104 400
handbook, halfpage handbook, halfpage
PZSM PZSM
(W) (W)
300
103
200
102
100
10
0
10−2 10−1 1 10 0 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8
tp (ms)
VZnom (V)
Tj = 25 °C prior to surge.
See also Fig.5. Tj = 25 °C prior to surge.
Fig.4 Maximum non-repetitive peak reverse Fig.5 Maximum non-repetitive peak reverse
power dissipation as a function of pulse power dissipation as a function of nominal
duration (square pulse). working voltage.
1996 Jun 10 7
Philips Semiconductors Product specification
MGD520
2 50
handbook, halfpage
handbook, halfpage
25
IF
(A)
7
50
1
3
0
0 1 2 MGA200
VF (V)
Tj = 25 °C.
Dimensions in mm.
Fig.6 Forward current as a function of forward
voltage; typical values. Fig.7 Device mounted on a printed-circuit board.
IRSMhalfpage
handbook,
(%)
100
90
50
10
t
t1
t2 MGD521
1996 Jun 10 8
Philips Semiconductors Product specification
PACKAGE OUTLINE
0.81
max
2.15 MBC051
max 28 min 3.8 max 28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.9 SOD81.
DEFINITIONS
1996 Jun 10 9