Professional Documents
Culture Documents
Materials for
Thin Films/Microelectronics
Anhydrous Halides Ordered by Element – High Purity Metals/Elements . . . . . . . . . . . . . . . . . . .330
69 Different Element Listings . . . . . . . . . . . . . . . . . . .255 Metals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .330
Mixed-Metal Halides . . . . . . . . . . . . . . . . . . . . . . . .289 Alloys . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .347
CVD & ALD Precursors . . . . . . . . . . . . . . . . . . . . . . . . .290 Polyamic Acids for High κ Dielectrics . . . . . . . . . . . . .347
Anhydrous Metal Nitrates . . . . . . . . . . . . . . . . . . . .290 Polyelectrolytes for SAMS:
High Purity Gases for CVD . . . . . . . . . . . . . . . . . . . .291 See Materials for Lithography/Nanopatterning . . . . .190
Gas Equipment: Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .348
See Equipment . . . . . . . . . . . . . . . . . . . . .513 Cyclopentadienyl Lanthanide Dopants:
Deuterated Gases . . . . . . . . . . . . . . . . . . . . . ..293 See Metal-Organic Precursors . . . . . . . . . . . . . . . . .303
Halogenated Gases . . . . . . . . . . . . . . . . . . . . .294 Sol-Gel Precursors Ordered by Element –
Metal Alkoxides: 52 Different Element Listings . . . . . . . . . . . . . . . . . . .349
See Sol Gel Precursors . . . . . . . . . . . . . . . .347 Lithium Containing Precursors:
An introductory overview of barrier materials, high k dielectric materials, and atomic layer deposition (ALD) is provided in the Technical Appendix
section.
Thin films for microelectronics are generally formed by one of three techniques, deposition techniques, solution-gelation (sol-gel), or self-assembly of
monolayers (SAM). Deposition is currently the most studied of these techniques and can be divided into two main categories: chemical vapor
deposition (CVD) and physical vapor deposition (PVD). Physical vapor deposition involves such techniques as molecular beam epitaxy (MBE), where a
material is vaporized and vacuum-sprayed onto a surface.
In CVD a material is volitalized as in PVD, but undergoes a chemical change (typically loss of functional groups) in order to deposit on a surface. Atomic
layer deposition (ALD) is a subcategory of CVD, where films are deposited one layer at a time. A number of articles have been published on CVD and
ALD techniques.1-4
www.sigma-aldrich.com/safc
Figure 1. Cross-sectional view of a typical integrated circuit showing details of the Si/SiO2/Metal materials stack forming the gate capacitor structure in the inset.
Candidate Materials
According to ITRS (International Technology Roadmap for Semiconductor) data the best candidate for gate material should possess a dielectric
constant, k, in the 10 - 25 range. Material for memory capacitor should have much higher k value. Table 1 shows the relevant properties of some high
k dielectric candidates.
Conduction
Relevant Properties of High-k Dielectric Candidates band
Conduction Dielectric Band gap offset to Si Crystal
band Material constant k Eg (eV) Ec (eV) structure
Dielectric Band gap offset to Si Crystal Al2O3 9 8.7 2.8* Amorphous
Material constant k Eg (eV) Ec (eV) structure Y2O3 15 5.6 2.3* Cubic
SiO2 3.9 8.9 3.2 Amorphous La2O3 30 4.3 2.3* Hexagonal,
Si3N4 7 5.1 2 Amorphous cubic
255
High k Dielectric Materials
Candidate Materials
al. Surface Coating Tech. 1997, 17, 147. (4) Holstein, W.L. Prog. Cryst.
Conduction
Growth Cha. Mat. 1992, 24, 111. (5) Vogel, E.M. High-k Gate
band
Dielectric Band gap offset to Si Crystal Dielectrics, MRS Workshop, New Orleans, LA., June1-2, 2000.
Material constant k Eg (eV) Ec (eV) structure
Ta2O5 26 4.5 1-1.5 Orthorhombic
TiO2 80 3.5 1.2 Tetragonal
(rutile, anatase) Anhydrous Halides
HfO2 25 5.7 1.5* Monoclinic, For an application overview and listing of ultra-pure inorganics and
tetragonal, metals for high-technology please request your copy of the AAPL,
cubic Aldrich-APL brochure.
ZrO2 25 7.8 1.4* Monoclinic,
tetragonal,
cubic Aluminum
*Calculated by Robertson2
Aluminum bromide
Table 1. Candidates for high k dielectrics and their relevant properties.
Microelectronics
Materials for Thin Films/
Chemical Vapor Deposition (CVD) method is the main technique Vapor pressure. . . . . . . .1 mm Hg ( 81.3 C) 25 g
currently used for deposition of metal nitride layers for different 100 g
applications. The films made by CVD exhibit much better conformal
coverage than the films deposited by physical vapor deposition methods. Aluminum chloride
CAS No. 7446-70-0
Good deposition precursors should not only be volatile but should also AlCl3 FW 133.3
have predictable decomposition routes, with gaseous or highly volatile The vapor-phase co-reductions with other metal halides by
side products from decomposition. Metal organic precursors can be hydrogen results in finely divided intermetallics with
designed to meet all these needs, but care must be taken in their applications as structural materials or compounds with useful
synthesis. Scientists at Sigma-Aldrich ensure the high-purity standards thermoelectric, magnetic, and oxidation-resistance properties.
necessary for MOCVD precursors by using only the highest purity Aluminum nitride can be synthesized from the elemnts with
starting materials: metals, metal halides, or organometallic reagents as
800.558.9196 (USA)
AlCl3 added to help facilitate crystallization.
well as high-purity solvents and organic ligands. References
1. Sohn, H.T.; PalDey, S., J. Mater. Res. 13, 3060 (1998)
2. Haber, J.A. et al., J. Am. Chem. Soc. 119, 5455 (1997)
R: 34 S: 28-45-7/8
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
56,391-9 anhydrous, powder, 99.999% 5g
25 g
/ . . . . . . . . . . . . . . . . . . . . . . . . . . . .
44,959-8 anhydrous, powder, 99.99% 5g
mp . . . . . . . . . . . . . . . . . . . . 190 C (lit.) 25 g
Density. . . . . . . . . . . . . . . . 2.44 g/mL (lit.) Ordering/Pricing: www.sigma-aldrich.com
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
29,471-3 99.99% 5g
100 g
500 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
49,535-2 granules, 99.9+% 1 kg
mp . . . . . . . . . . . . . . . . . . 190 C (S) (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.44 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
23,705-1 99%, mp 190 C 5g
Vapor pressure. . . . . . . . 1 mm Hg ( 100 C) 100 g
500 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
20,691-1 98% 5g
Vapor pressure. . . . . . . 1 mm Hg ( 100 C) 100 g
mp . . . . . . . . . . . . . . . . . . .190 C (lit.) 1 kg
Density. . . . . . . . . . . . . . . 2.44 g/mL (lit.)
The highest quality components are used for the syntheses of MOCVD precursors
in order to assure their purity.
References (1) Choy, K.L. Prog. Mat. Sci. 2003, 48, 57. (2) Yoon, D.-S.;
Roh, J.S. Critical Rev. Solid State Mat. Sci. 2002, 27, 143. (3) Safaie, S. et
256
Anhydrous Halides
Aluminum
33,887-7 99.99+% 5g
Lett. 1996, 41, 221. Vapor pressure. . . . . . . 1 mm Hg ( 22.7 C)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1 g/mL (lit.)
25 g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
33,291-7 solid 10 g 21,517-1 99% 50 g
Vapor density. . . . . . . . . . . .>10.2 (vs air) 250 g
100 g
Vapor pressure. . . . . . . . . 0.13 psi ( 55 C) 1 kg
Vapor pressure. . . . . . . . 1 mm Hg ( 23 C)
Aluminum iodide bp. . . . . . . . . . . . . . . . . . . . . . . . . 92 C/30 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8 C (lit.)
CAS No. 7784-23-8
AlI3 FW 407.7 Antimony(III) fluoride
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.98 g/mL (lit.)
(Antimony trifluoride)
R: 14-34-40-42/43 S: 22-26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CAS No. 7783-56-4
40,932-4 anhydrous, powder, 99.999% 1g SbF3 FW 178.8
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Microelectronics
23,610-1 100 g
800.558.9196 (USA)
R: 23/25-50/53 S: 20/21-28-45-60-61
Beryllium
Barium
Beryllium chloride
Barium bromide
20,119-7 CAS No. 7787-47-5 5g
41,360-7 CAS No. 10553-31-8 1g BeCl2 FW 79.92 25 g
BaBr2 FW 297.1 5g Purified by sublimation, 99%
anhydrous, beads, -10 mesh, 99.999% 25 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 399 C (lit.)
Packaged under argon in ampules Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.899 g/mL (lit.) Ordering/Pricing: www.sigma-aldrich.com
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm R: 49-25-26-36/37/38-43-48/23-51/53 S: 53-45-61
R: 20/22 S: 28
Bismuth(III) oxychloride
CAS No. 7787-59-9
BiOCl FW 260.4
R: 36/37/38 S: 26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
22,948-2 99.99+% 10 g
50 g
259
Anhydrous Halides
Cadmium
Microelectronics
Materials for Thin Films/
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
H2O. . . . . . . . . . . . . . . . . . . . . <100 ppm 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cadmium fluoride
49,960-9 anhydrous, powder, 99.99% 1g
mp . . . . . . . . . . . . . . . . . . . . 772 C (lit.) 10 g
CAS No. 7790-79-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CdF2 FW 150.4 44,970-9 anhydrous, beads, -10 mesh, 99.9+% 2g
R: 45-46-60-61-25-26-48/23/25-50/53 S: 53-45-60-61 mp . . . . . . . . . . . . . . . . . . . . 772 C (lit.) 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
H2O. . . . . . . . . . . . . . . . . . . . . <100 ppm 50 g
22,951-2 99.98% 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
30,763-7 98% 25 g Calcium fluoride
Cadmium iodide CAS No. 7789-75-5
CaF2 FW 78.08
800.558.9196 (USA)
CAS No. 7790-80-9 R: 20/22-36/37/38 S: 26-36
CdI2 FW 366.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 388 C (lit.) 37,880-1 random crystals, optical grade, 99.99% 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.67 g/mL (lit.)
R: 23/25-33-50/53-68 S: 22-45-60-61
44,971-7 anhydrous, powder, 99.99% 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Packaged under argon in ampules 25 g
44,969-5 anhydrous, beads, -10 mesh, 99.999% 5 g Employed in a study of selectivity and
Packaged under argon in ampules 25 g response time of ion-selective electrodes,1 and in the
H2O. . . . . . . . . . . . . . . . . . . . . <100 ppm development of novel bioactive bone cements.2 (1) Aust.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . J. Chem. 1996, 49, 897. (2) Bioceram. Proc. Int. Symp.
20,291-6 99.999% 10 g
Ceram. Med. 1994, 7, 279.
50 g
Ordering/Pricing: www.sigma-aldrich.com
. . . . . . . . . . . . . . . . . . . . . . . . . . . . bp. . . . . . . . . . . . . . . . . . . . . . 2500 C/760 mm Hg (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 3.18 g/mL (lit.)
22,851-6 99% 50 g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
bp. . . . . . . . . . . . 787 C/760 mm Hg (lit.) 250 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
23,794-9 powder, -325 mesh, 99.5+% 5g
Calcium chloride Density. . . . . . . . . . . . . . . .3.18 g/mL (lit.) 100 g
500 g
CAS No. 10043-52-4
CaCl2 FW 111.0 Calcium iodide
R: 36 S: 22-24
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
38,315-5 -30-+80 mesh, 97% 100 g CAS No. 10102-68-8
Density. . . . . . . . . . . . . . . .2.15 g/mL (lit.) 500 g CaI2 FW 293.9
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 61 S: 53-22-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
38,314-7 96+%, ‡96.0%, ACS reagent 100 g
43,979-7 anhydrous, beads, -10 mesh, 99.999% 5 g
desiccant 500 g
Titr. base. . . . . . . . . . . . . . .£0.006 meq/g
Packaged under argon in ampules 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . H2O. . . . . . . . . . . . . . . . . . . . . <100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
23,922-4 Technical Grade, -4-+30 mesh 25 g
51,624-4 anhydrous, beads, -10 mesh, 99.95% 25 g
Porous. An effective desiccant 500 g
Vapor pressure. . . . . . 0.01 mm Hg ( 20 C) 2.5 kg
Packaged under argon in ampules 100 g
mp . . . . . . . . . . . . . . . . . . . 779 C (lit.)
mp . . . . . . . . . . . . . . . . . . 782 C (lit.)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.15 g/mL (lit.)
260
Anhydrous Halides
Calcium
99% Tetrabromomethane
Chain transfer agent for radical polymerization of
C1,108-1 (Carbon tetrabromide) 5g
methacrylates. Brominating reagent.
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . 6.85 (vs air)
CAS No. 558-13-4 100 g
Vapor pressure. . . . . . . . . . . . . . . . . 38.4 mm Hg ( 25 C) CBr4 FW 331.6 500 g
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5065 (lit.)
99%
bp. . . . . . . . . . . . . . . . . . . . . . . 105 C/760 mm Hg (lit.) Vapor pressure. . . . . . . . . . . . . . . . . . .40 mm Hg ( 96 C)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -6 C (lit.) bp. . . . . . . . . . . . . . . . . . . . . . . 190 C/760 mm Hg (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 2.012 g/mL (lit.) mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88-90 C (lit.)
R: 20/21/22 S: 36/37 R: 20/21/22 S: 28
Microelectronics
Materials for Thin Films/
280 nm. . . . . . . . . . . . . . . . . . . . <0.02
23,793-0 powder, 5 mm, 99% 50 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250 g 56,259-9 Cabot High-Purity grade 1 kg
Product of Cabot Performance Materials 5 kg
Cerium(IV) fluoride mp . . . . . . . . . . . . . . . . . . . . . . . 645 C
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.988 g/mL
43,593-7 CAS No. 10060-10-3 5g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CeF4 FW 216.1 25 g 56,260-2 Cabot technical grade 1 kg
99% Product of Cabot Performance Materials 5 kg
R: 20/21/22-32-36/37/38 S: 26-36 mp . . . . . . . . . . . . . . . . . . . . . . . 645 C
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.988 g/mL
Cerium(III) iodide
Cesium dichloroiodide
CAS No. 7790-87-6
800.558.9196 (USA)
CeI3 FW 520.8 57,478-3 CAS No. 15605-42-2 5g
R: 61-42/43 S: 53-26-36/37/39-45 Cl2CsI FW 330.7 15 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 99.999%
45,682-9 anhydrous, powder, 99.99% 1g R: 36/37/38 S: 26-36
mp . . . . . . . . . . . . . . . . . . . . . 750 C (lit.) 5 g Cesium fluoride See: Crystal Grade Inorganics Page 406
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
46,608-5 anhydrous, beads, -10 mesh, 99.9% 1g
5g Cesium fluoride
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
42,707-1 anhydrous, powder, 99.9% 1g CAS No. 13400-13-0
5g CsF FW 151.9 Ordering/Pricing: www.sigma-aldrich.com
Used in the successful synthesis of a single-crystal Dion-
Jacobson phase, CsLaTa2O7, that has applications in
Cesium photocatalysis and superconductivity.
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 682 C (lit.)
Cesium bromide Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.115 g/mL (lit.)
R: 23/24/25-34 S: 26-36/37/39-45
CAS No. 7787-69-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CsBr FW 212.8 28,934-5 99.9% 5g
R: 36/37/38 S: 26-36 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 g
42,939-2 anhydrous, beads, -10 mesh, 99.999% 1g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 g 19,832-3 99% 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . mp . . . . . . . . . . . . . . . . . . . 682 C (lit.) 100 g
20,301-7 99.999% 10 g Density. . . . . . . . . . . . . . . 4.115 g/mL (lit.)
50 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 56,249-1 Cabot High-Purity grade 1 kg
45,076-6 anhydrous, beads, -10 mesh, 99.9% 10 g Product of Cabot Performance Materials 5 kg
Packaged under argon in ampules 50 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mp . . . . . . . . . . . . . . . . . . . . 636 C (lit.) 57,231-4 Cabot technical grade 1 kg
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm Product of Cabot Performance Materials 5 kg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cesium iodide See: Crystal Grade Inorganics Page 406
20,214-2 99.9% 25 g
mp . . . . . . . . . . . . . . . . . . . 636 C (lit.) 100 g
262
Anhydrous Halides
Cesium
To discuss your specific requirement or to obtain more information, please contact Mike Willis
at mwillis@sial.com. (414) 298 7910 or Prashant Savle at psavle@sial.com. (414) 298 7924.
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SIGMA-ALDRICH FINE CHEMICALS • BOX 14508 • ST. LOUIS • MISSOURI • 63178 • USA
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A Member of the Sigma-Aldrich Family
264
Anhydrous Halides
Cobalt
Copper
Cobalt(II) chloride
Copper(I) bromide
(Cobaltous chloride)
CAS No. 7646-79-9 25,418-5 (Cuprous bromide) 10 g
CoCl2 FW 129.8 CAS No. 7787-70-4 100 g
The vapor-phase co-reductions with other metal halides by CuBr FW 143.5
hydrogen results in finely divided intermetallics with 99.999%
applications as structural materials or compounds with useful Density. . . . . . . . . . . . . . . . . . . . . . . . . . 4.72 g/mL (lit.)
thermoelectric, magnetic, and oxidation-resistance properties. S: 22-24/25
References
Sohn, H.Y., PalDey, S., J. Mater. Res. 13, 3060 (1998) Copper(II) bromide
R: 49-22-42/43-50/53 S: 53-22-45-60-61
www.sigma-aldrich.com/safc
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Cupric bromide)
40,933-2 anhydrous, beads, -10 mesh, 99.999% 1 g
CAS No. 7789-45-9
Packaged under argon in ampules 5g
CuBr2 FW 223.4
Precursor for five-coordinate, heteroleptic Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.77 g/mL (lit.)
thiolate/N complexes which are potential models for R: 36/37/38 S: 26-36
cysteine-ligated metalloenzyme activity. Shoner, S.C. et al. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inorg. Chem. 1998, 37, 5721. 43,786-7 99.999% 5g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 724 C (lit.) 25 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 3.37 g/mL (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm 22,177-5 99% 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . mp . . . . . . . . . . . . . . . . . . . 498 C (lit.) 100 g
44,977-6 anhydrous, beads, -10 mesh, 99.9% 5g 500 g
Packaged under argon in ampules 25 g
mp . . . . . . . . . . . . . . . . . . . . 740 C (lit.) Copper(I) bromide methylsulfide complex
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 3.37 g/mL (lit.)
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
23,269-6 97% 5g
Vapor pressure. . . . . . . . .40 mm Hg ( 0 C) 100 g CuBr CH3SCH3 FW 205.6
500 g 99%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 132 C (dec.) (lit.)
R: 20/21/22 S: 36/37
Cobalt(II) fluoride
CAS No. 10026-17-2 Copper(I) chloride
CoF2 FW 96.93
R: 25-34 S: 26-36/37/39-45
(Cuprous chloride)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CAS No. 7758-89-6
47,676-5 anhydrous, powder, 99.99% 2g CuCl FW 99.00
10 g Shows unique character as an initiator of radical reactions such
. . . . . . . . . . . . . . . . . . . . . . . . . . . . as the hydrostannation of a,b-unsaturated ketones. Ooi, T. et
23,612-8 powder 5g al. Tetrahedron Lett. 1999, 40, 2133.
25 g Vapor pressure. . . . . . . . . . . . . . . . . . . . . 1.3 mm Hg ( 546 C)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430 C (lit.)
Cobalt(III) fluoride Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.14 g/mL (lit.)
R: 22-50/53 S: 22-60-61
23,613-6 (Cobaltic fluoride) 5g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 10026-18-3 25 g 22,962-8 99.995+% 10 g
CoF3 FW 115.9 100 g 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . 3.88 g/mL (lit.)
R: 34 S: 26-36/37/39-45
22,433-2 purified, 99+% 25 g
100 g
Cobalt(II) iodide
Copper(II) chloride
CAS No. 15238-00-3
CoI2 FW 312.7 (Cupric chloride)
R: 20/21/22-36/37/38 S: 26-36 CAS No. 7447-39-4
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CuCl2 FW 134.5
42,974-0 anhydrous, beads, -10 mesh, 99.999% 1g Will react with potassium alkoxytitanates to form precursors to
5g novel titanium-containing ceramics. Effective catalyst for the
. . . . . . . . . . . . . . . . . . . . . . . . . . . . tetrahydropyranylation of alcohols, using mild conditions and in
49,912-9 anhydrous, powder, 99.999% 1g
high yields.
5g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 620 C (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.386 g/mL (lit.)
34,314-5 95% 10 g
References
100 g 1. Veith, M., Inorg. Chem. 36, 2391 (1997)
2. Veith, M. et al., Inorg. Chem. 36, 2391 (1997)
3. Bhalerao, U.T. et al., Synth. Commun. 26, 3081 (1996)
R: 22-36/37/38-50/53 S: 26-36-60-61
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
20,314-9 99.999% 10 g
50 g
265
Anhydrous Halides
Copper
Microelectronics
Materials for Thin Films/
Copper(I) iodide Packaged under argon in ampules 25 g
H2O. . . . . . . . . . . . . . . . . . . . . <100 ppm
21,555-4 (Cuprous iodide) 5g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CuI FW 190.5 25 g 32,559-7 anhydrous, powder, 99% 5g
99.999% 100 g 25 g
Vapor pressure. . . . . . . 10 mm Hg ( 656 C)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 605 C (lit.) Erbium(III) fluoride
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 5.62 g/mL (lit.)
R: 22-36/37/38 S: 26-36 43,215-6 CAS No. 13760-83-3 5g
ErF3 FW 224.3 25 g
anhydrous, powder, 99.99%
Dysprosium Packaged under argon in ampules
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
800.558.9196 (USA)
Dysprosium(III) bromide R: 23/24/25-32 S: 26-36/37/39-45
Microelectronics
Materials for Thin Films/
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 289 C (dec.) (lit.)
57,265-9 CAS No. 24415-00-7 5g Density. . . . . . . . . . . . . . . . . . . . . . . . . . 7.57 g/mL (lit.)
R: 34-43 S: 26-27-36/37/39-45
GeBr2 FW 232.4
97%
solid
Gold(III) chloride
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120-125 C
CAS No. 13453-07-1
R: 34 S: 26-36/37/39-45
AuCl3 FW 303.3
Germanium(IV) bromide Nanocrystalline superlattices in gold colloid solution have been
prepared by ligand-induction using AuCl3 reduced with sodium
38,136-5 CAS No. 13450-92-5 10 g borohydride. Lin, X.M. et al. Chem. Mater. 1999, 11, 198.
GeBr4 FW 392.3 R: 36/37/38 S: 26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
bp. . . . . . . . . . . . . . . . . . . . . . 186.5 C/760 mm Hg (lit.)
37,994-8 99.99+% 250 mg
800.558.9196 (USA)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.1 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 3.13 g/mL (lit.)
1g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
33,404-9 99% 500 mg
5g
Germanium(IV) chloride
(Germanium tetrachloride)
Gold(I) iodide
CAS No. 10038-98-9 39,841-1 CAS No. 10294-31-2 1g
GeCl4 FW 214.5 AuI FW 323.9 5g
Used in the microwave preparation of Ge2Cl6, a colorless 99.9%
crystalline material which was included in a further study of mp . . . . . . . . . . . . . . . . . . . . . . . . . . 120 C (dec.) (lit.)
Ordering/Pricing: www.sigma-aldrich.com
low-valent germanium compounds. Beattie, I.R. et al. Inorg. Density. . . . . . . . . . . . . . . . . . . . . . . . . . 8.25 g/mL (lit.)
Chem. 1998, 37, 6032. R: 36/37/38 S: 26-37/39
R: 14-34 S: 26-27-36-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Gold(III) iodide
25,583-1 99.999% 1g
Vapor pressure. . . . . . . . . 76 mm Hg ( 20 C) 10 g
50820 CAS No. 13453-24-2 1g
Density. . . . . . . . . . . . . . . . 1.88 g/mL (lit.) 50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . AuI3 FW 577.7 5g
20,845-0 99.99% 5g purum, ‡34% as Au
Vapor pressure. . . . . . . . 76 mm Hg ( 21 C) 25 g R: 34-43 S: 26-36/37/39-45
bp. . . . . . . . . . . . . 83 C/760 mm Hg (lit.) 100 g
mp . . . . . . . . . . . . . . . . . . -49.5 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.844 g/mL (lit.)
InBr FW 194.7 25 g
CAS No. 13499-05-3 anhydrous, beads, -10 mesh, 99.999%
HfCl4 FW 320.3 Packaged under argon in ampules
R: 36/38 S: 26-36/37 bp. . . . . . . . . . . . . . . . . . . . . . . 656 C/760 mm Hg (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220 C (lit.)
59,059-2 99.9%, Purified by sublimation 5g Density. . . . . . . . . . . . . . . . . . . . . . . . . . 4.96 g/mL (lit.)
25 g H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 20/21/22-36/37/38 S: 26-36
25,820-2 98% 10 g
Vapor pressure. . . . . . . . . 1 mm Hg ( 190 C) 50 g
Indium(III) bromide
Hafnium(IV) fluoride CAS No. 13465-09-3
InBr3 FW 354.5
39,986-8 CAS No. 13709-52-9 5g R: 36/37/38 S: 26-36
HfF4 FW 254.5 25 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Microelectronics
Materials for Thin Films/
H2O. . . . . . . . . . . . . . . . . . . . . .<100 ppm FeCl2 FW 126.8
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.16 g/mL (lit.)
57,860-6 anhydrous, powder, 99.999% 2g R: 22-34 S: 26-36/37/39-45
10 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
42,936-8 anhydrous, beads, -10 mesh, 99.998% 1 g
Indium(III) iodide Packaged under argon in ampules 10 g
Used in the synthesis of a novel cis-
41,366-6 CAS No. 13510-35-5 1g Fe(BPE5)2Cl2 (BPE5=1,2-diphospholanoethane) complex,
InI3 FW 495.5 5g which has potential application in many types of reactions
anhydrous, powder, 99.998% such as intra- or intermolecular activation. Field, L.D. et al.
Packaged under argon in ampules Inorg. Chem. 1998, 37, 612.
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
R: 42/43-63 S: 22-26-36/37/39
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
800.558.9196 (USA)
45,093-6 anhydrous, beads, -10 mesh, 99.99% 5g
Packaged under argon in ampules 25 g
Iridium Used in the synthesis of a novel cis-
Fe(BPE5)2Cl2 (BPE5=1,2-diphospholanoethane) complex,
Iridium(III) chloride which has potential application in many types of reactions
such as intra- or intermolecular activation. Field, L.D. et al.
CAS No. 10025-83-9 Inorg. Chem. 1998, 37, 612.
IrCl3 FW 298.6 mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 677 C (lit.)
R: 36/37/38 S: 26-36 H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
52,072-1 99.9+% 1g 45,094-4 anhydrous, beads, -10 mesh, 99.9% 10 g Ordering/Pricing: www.sigma-aldrich.com
solid Packaged under argon in ampules 50 g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 763 C (lit.) Used in the synthesis of a novel cis-
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Fe(BPE5)2Cl2 (BPE5=1,2-diphospholanoethane) complex,
33,680-7 crystals 500 mg
which has potential application in many types of reactions
2g
such as intra- or intermolecular activation. Field, L.D. et al.
Inorg. Chem. 1998, 37, 612.
Iridium(IV) iodide mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 677 C (lit.)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
58,719-2 CAS No. 7790-45-6 1g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IrI4 FW 699.8 5g 37,287-0 98% 25 g
crystals, 99.95% 250 g
solid
270
Anhydrous Halides
Iron
Lead(II) fluoride
CAS No. 7783-46-2
PbF2 FW 245.2
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 824 C (lit.)
R: 61-20/22-33-50/53-62 S: 53-45-60-61
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
22,972-5 99.99% 25 g
Density. . . . . . . . . . . . . . . . 8.445 g/mL (lit.)
271
Anhydrous Halides
Lead
Microelectronics
Materials for Thin Films/
Density. . . . . . . . . . . . . . . . 3.46 g/mL (lit.) Packaged under argon in ampules 10 g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm Used in the preparation of hypersensitive 50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . thermoluminescent materials,1
22,973-3 99.995+% 25 g dosimeters,2 and in the room-temperature oxidation of
mp . . . . . . . . . . . . . . . . . . . 550 C (lit.) 125 g
Density. . . . . . . . . . . . . . .3.464 g/mL (lit.)
noble metals using fluorine in anhydrous HF.3 (1) Radiat.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Prot. Dosim. 1996, 66, 423, 431. (2) ibid., 1996, 66, 101,
44,987-3 anhydrous, beads, -10 mesh, 99.9+% 25 g 255. (3) Eur. J. Solid State Inorg. Chem.1996, 33, 809.
Packaged under argon in ampules 100 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 845 C (lit.)
mp . . . . . . . . . . . . . . . . . . . 550 C (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . 2.635 g/mL (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 3.464 g/mL (lit.) H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
20,364-5 powder, 5 mm, 99.99+% 5g
mp . . . . . . . . . . . . . . . . . . . . 845 C (lit.) 25 g
Lithium chloride
800.558.9196 (USA)
Density. . . . . . . . . . . . . . . 2.635 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 7447-41-8 34,301-3 fused, pieces, 3-6 mm, 99.9% 50 g
LiCl FW 42.39 Suitable for vacuum deposition. 250 g
Used in formation of an active Mn(0) species useful for radical Density. . . . . . . . . . . . . . . 2.64 g/mL (lit.)
cyclization reactions, Tang, J. et al. Tetrahedron 1999, 55, . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1893. 37,882-8 optical grade, random crystals 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 22-36/37/38 S: 26
23,796-5 powder, 5 mm 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . mp . . . . . . . . . . . . . . . . . . .848 C (lit.) 1 kg
42,945-7 anhydrous, beads, -10 mesh, 99.998% 5 g Density. . . . . . . . . . . . . . . 2.64 g/mL (lit.)
Packaged under argon in ampules 25 g
Ordering/Pricing: www.sigma-aldrich.com
Density. . . . . . . . . . . . . . . . 2.07 g/mL (lit.) Lithium iodide
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CAS No. 10377-51-2
20,363-7 99.99+% 10 g LiI FW 133.8
mp . . . . . . . . . . . . . . . . . . . 605 C (lit.) 50 g R: 61-36/38 S: 53-22-26-36/37/39-45
Density. . . . . . . . . . . . . . .2.068 g/mL (lit.) 100 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45,095-2 anhydrous, beads, -10 mesh, 99.999% 5 g
Packaged under argon in ampules 25 g
Controls regioselectivity in palladium
catalyzed allylic alkylation reactions. Kawatsura, M. et al.
Chem. Commun. 1998, 217.
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 446 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 3.49 g/mL (lit.)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
272
Anhydrous Halides
Lithium
Microelectronics
Materials for Thin Films/
R: 26/27/28-33-50/53 S: 13-28-45-60-61
Abbati, G.L. et al. Inorg. Chem. 1998, 37, 1430. (2) Tang, J. et
al. Tetrahedron 1999, 55, 1893. Mercury(II) bromide
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.98 g/mL (lit.)
R: 22-52 (Mercuric bromide)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
45,099-5 anhydrous, beads, -10 mesh, 99.999% 5 g CAS No. 7789-47-1
Packaged under argon in ampules 25 g HgBr2 FW 360.4
mp . . . . . . . . . . . . . . . . . . . . 652 C (lit.) R: 26/27/28-33-50/53 S: 13-28-45-60-61
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 44,912-1 anhydrous, beads, -10 mesh, 99.999% 5 g
42,944-9 anhydrous, beads, -10 mesh, 99.99% 5g Packaged under argon in ampules 25 g
Packaged under argon in ampules 25 g bp. . . . . . . . . . . . . 322 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . 652 C (lit.) mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 236 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 6.109 g/mL (lit.)
800.558.9196 (USA)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
24,458-9 99+% 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
43,785-9 99.998% 5g
50 g
Vapor pressure. . . . . . . . 1 mm Hg ( 136.5 C) 25 g
250 g mp . . . . . . . . . . . . . . . . . . . . 236 C (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . 6.109 g/mL (lit.)
32,814-6 beads, 98% 25 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500 g 40,075-0 crystalline powder 25 g
2 kg Density. . . . . . . . . . . . . . . .6.05 g/mL (lit.) 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
41,647-9 flakes, 97% 500 g
2 kg
Mercury(I) chloride Ordering/Pricing: www.sigma-aldrich.com
20,377-7 99.999% 50 g
Vapor pressure. . . . . . .1.3 mm Hg ( 236 C) 250 g M. Chem. Commun. 1997, 1615.
bp. . . . . . . . . . . . 302 C/760 mm Hg (lit.) Vapor pressure. . . . . . . . . . . . . . . . . . . . . 131 mm Hg ( 250 C)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277 C (lit.) Vapor pressure. . . . . . . . . . . . . . . . . . . . . 1.75 mm Hg ( 25 C)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194 C (lit.)
42,972-4 anhydrous, powder, 99.998% 1g Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.928 g/mL (lit.)
Packaged under argon in ampules 10 g R: 29-34 S: 26-36/37/39-45
mp . . . . . . . . . . . . . . . . . . . . 277 C (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm 24,193-8 99.9+% 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Packaged in ampules 100 g
45,100-2 anhydrous, beads, -10 mesh, 99.9+% 5g bp. . . . . . . . . . . . .268 C/760 mm Hg (lit.)
Packaged under argon in ampules 25 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mp . . . . . . . . . . . . . . . . . . . . 277 C (lit.) 20,835-3 98% 25 g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm insoluble matter. . . . . . . . . . . . . . . <0.5% 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
41,344-5 98+% 100 g Molybdenum(VI) dichloride dioxide
500 g
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Microelectronics
Materials for Thin Films/
250 g
Nickel(II) bromide
CAS No. 13462-88-9 Nickel(II) fluoride
NiBr2 FW 218.5
34,221-1 CAS No. 10028-18-9 10 g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 963 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.098 g/mL (lit.)
NiF2 FW 96.69 50 g
R: 45-36/37/38-42/43 S: 53-26-36/37/39-45 99%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . . . . . . . . . . . . 4.72 g/mL (lit.)
44,915-6 anhydrous, powder, 99.99+% 1g R: 45-36/37/38-42/43 S: 53-26-36/37/39-45
mp . . . . . . . . . . . . . . . . . . . . . 963 C (lit.) 5 g
Density. . . . . . . . . . . . . . . . 5.098 g/mL (lit.) Nickel(II) iodide
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 40,077-7 CAS No. 13462-90-3 5g
56,114-2 anhydrous, powder, 99.9+% 2g NiI2 FW 312.5 25 g
800.558.9196 (USA)
10 g powder
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 5.83 g/mL (lit.)
21,789-1 98% 10 g
R: 45-61-42/43 S: 53-22-26-36/37/39-45
mp . . . . . . . . . . . . . . . . . . . 963 C (lit.) 50 g
Density. . . . . . . . . . . . . . .5.098 g/mL (lit.) 250 g
Niobium
Nickel(II) bromide ethylene glycol dimethyl ether complex
Niobium(V) bromide
40,634-1 CAS No. 28923-39-9 1g
NiBr2O2C4H10 FW 308.6 5g 36,277-8 CAS No. 13478-45-0 10 g
97%
Ordering/Pricing: www.sigma-aldrich.com
NbBr5 FW 492.4 50 g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 F
98%
R: 11-20/21/22-36/37/38 S: 16-22-26-36/37/39-45
R: 20/21/22-34 S: 26-27-28-36/37/39-45
CH
3
O
NiBr
2
Niobium(III) bromide-ethylene glycol dimethyl ether
O complex
CH
3
36,595-5 CAS No. 126083-88-3 1g
NbBr3O2C4H10 FW 422.7
R: 34 S: 26-27-28-36/37/39-45
Nickel(II) bromide 2-methoxyethyl ether complex
45,967-4 CAS No. 312696-09-6 5g
NiBr2O(CH2CH2OCH3)2 FW 352.7 10 g
R: 45-60-61-11-36/37/38-42/43 S: 53-16-22- 25 g
36/37/39-45
276
Anhydrous Halides
Niobium
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 C (dec.) (lit.) 5g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 F 25 g
Microelectronics
Materials for Thin Films/
R: 11-34 S: 16-26-27-36/37/39-45
150 g
1 kg
Niobium(III) chloride–1,2-dimethoxyethane complex
Palladium(II) iodide
32,635-6 (Niobium trichloride 1,2- 5g
DimethoxyethaneComplex; trichloro(1,2- 25 g CAS No. 7790-38-7
dimethoxyethane)niobium) PdI2 FW 360.2
CAS No. 110615-13-9 Density. . . . . . . . . . . . . . . . 6.003 g/mL (lit.)
NbCl3 C4H10O2 FW 289.4 S: 22-24/25
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 230 C (dec.) (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 34 S: 26-36/37/39-45 20,396-3 99.998% 2g
NbCl
3
CH OCH CH OCH
3 2 2 3
mp . . . . . . . . . . . . . . . . 350 C (dec.) (lit.) 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
46,467-8 97% 2g
mp . . . . . . . . . . . . . . . . . . . . 350 C (lit.) 10 g
Niobium(V) fluoride
Phosphorus
31,699-7 CAS No. 7783-68-8 5g
NbF5 FW 187.9 25 g Phosphorus oxybromide
98%
Packaged in Teflon bottles 37,694-9 (Phosphorus oxide bromide; Phosphoryl 25 g
R: 20/21/22-34 S: 26-27-28-36/37/39-45 bromide)
CAS No. 7789-59-5
Niobium(V) iodide POBr3 FW 286.7
bp. . . . . . . . . . . . . . . . . . . . . . . 192 C/760 mm Hg (lit.)
40,079-3 CAS No. 13779-92-5 5g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 C (lit.)
NbI5 FW 727.4 Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.82 g/mL (lit.)
-8 mesh R: 14-34 S: 26-36/37/39-43-45
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300 C (lit.)
R: 34 S: 22-26-27-36/37/39-45
Osmium
Osmium trichloride
39,859-4 CAS No. 13444-93-4 100 mg
OsCl3 FW 296.6 500 mg
99.9%
R: 23/24/25-34 S: 26-36/37/39-45
277
Anhydrous Halides
Phosphorus
Microelectronics
Materials for Thin Films/
R: 14-23/24/25-34 S: 26-27-28-36/37/39-45 Vapor pressure. . . . . . . . . . . . . . . . . . . .23.32 psi ( 55 C)
R: 14-26/28-35-40-48/20 S: 26-36/37/39-45-7/8
Phosphorus pentoxide
Phosphorus triiodide
(Phosphorus(V) oxide; Phosphoric anhydride)
CAS No. 1314-56-3 24,155-5 (Phosphorus(III) iodide) 10 g
P2O5 FW 141.9 CAS No. 13455-01-1 50 g
R: 35 S: 22-26-45 PI3 FW 411.7
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 99%
41,711-4 99.9999% 50 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 C (lit.)
Packaged under nitrogen in ampules Density. . . . . . . . . . . . . . . . . . . . . . . . . . 4.18 g/mL (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 340 C (lit.) R: 14-34-37 S: 26-36/37/39-45
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
800.558.9196 (USA)
25,605-6 99.998% 25 g Platinum
Vapor density. . . . . . . . . . . . . . 4.9 (vs air) 100 g
Vapor pressure. . . . . . . 10 mm Hg ( 238 C)
Vapor pressure. . . . . . . . . . . . . . . . . . .1 mm Hg ( 384 C)
Platinum(II) bromide
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.39 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20,612-1 CAS No. 13455-12-4 1g
43,141-9 99.99+%, ReagentPlus 50 g PtBr2 FW 354.9 5g
Meets A.C.S. reagent specifications. 250 g 98%
Vapor density. . . . . . . . . . . . . . 4.9 (vs air) mp . . . . . . . . . . . . . . . . . . . . . . . . . . 250 C (dec.) (lit.)
Vapor pressure. . . . . . . . . . . . . . . . . . .1 mm Hg ( 384 C) Density. . . . . . . . . . . . . . . . . . . . . . . . . . 6.65 g/mL (lit.)
Vapor pressure. . . . . . . . . . . . . . . . . . 10 mm Hg ( 238 C) Ordering/Pricing: www.sigma-aldrich.com
insolubles. . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.02% Platinum(II) chloride
total metallic impurities. . . . . . . . . . . . . . . . . . . <100 ppm
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 g/mL (lit.) CAS No. 10025-65-7
Heavy metals. . . . . . . . . . . . . . . . . . . . . . . . . . £0.01% PtCl2 FW 266.0
NH4+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.01% mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 581 C (dec.) (lit.)
Trademark of Sigma-Aldrich Co. Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.05 g/mL (lit.)
R: 34-42/43 S: 26-27-36/37/39-45
Phosphorus tribromide . . . . . . . . . . . . . . . . . . . . . . . . . . . .
48,231-5 99.99+% 1g
CAS No. 7789-60-8 solid
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
52,063-2 Engelhard code S3052, 99.9+% 1g
Phosphorus tribromide solid 5g
(Phosphorus(III) bromide) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PBr3 FW 270.7 20,609-1 98% 250 mg
Vapor pressure. . . . . . . . . . . . . . . . . . .10 mm Hg ( 48 C) 1g
bp. . . . . . . . . . . . . . . . . . . . . . . 175 C/760 mm Hg (lit.) 5g
R: 14-34-37 S: 26-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
28,846-2 99.99+% 10 g
Vapor pressure. . . . . . . . . . 0.27 psi ( 54 C) 50 g
mp . . . . . . . . . . . . . . . . . . . -41.5 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.85 g/mL (lit.)
278
Anhydrous Halides
Platinum
R: 23/24/25 S: 26-45
Potassium . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Microelectronics
Materials for Thin Films/
Microelectronics
Materials for Thin Films/
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
46,632-8 CAS No. 13813-23-5 1g 21,526-0 99.8% 10 g
PrI3 FW 521.6 5g mp . . . . . . . . . . . . . . . . . . . . 718 C (lit.) 50 g
anhydrous, powder, 99.9+% Density. . . . . . . . . . . . . . . . . 2.8 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 61-42/43 S: 53-36/37/39-45
45,122-3 anhydrous, beads, -10 mesh, 99.5% 10 g
Packaged under argon in ampules
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 715 C (lit.)
Rhenium Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.76 g/mL (lit.)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
Rhenium(III) chloride
Rubidium fluoride See: Crystal Grade Inorganics Page 406
30,918-4 CAS No. 13569-63-6 1g
ReCl3 FW 292.6 5g Rubidium iodide
800.558.9196 (USA)
Starting material for peralkylated benzene-
metal complexes that act as electron reservoirs. 25,144-5 CAS No. 7790-29-6 10 g
Organometallics 1989, 8, 2243. RbI FW 212.4 50 g
R: 36/37/38 S: 26-37/39 99.9%
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 g/mL (lit.)
Rhenium(V) chloride S: 22-24/25
Scandium fluoride
CAS No. 10361-82-7
SmCl3 FW 256.7 43,210-5 CAS No. 13709-47-2 1g
Packaged under argon in ampules ScF3 FW 102.0 5g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.46 g/mL (lit.) anhydrous, powder, 99.99%
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <100 ppm Packaged under argon in ampules
R: 36/37/38 S: 26-36 H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 23/24/25-32 S: 26-36/37/39-45
44,999-7 anhydrous, beads, -10 mesh, 99.99% 1g
mp . . . . . . . . . . . . . . . . . . . . 686 C (lit.) 5g Scandium iodide
25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
45,125-8 anhydrous, beads, -10 mesh, 99.9% 5g 43,967-3 CAS No. 14474-33-0 1g
25 g ScI3 FW 425.7 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . anhydrous, powder, 99.999%
40,061-0 anhydrous, powder, 99.9% 2g Packaged under argon in ampules
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
10 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 920 C (lit.)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
Microelectronics
Materials for Thin Films/
50 g
R: 61-36/37/38 S: 53-22-36/37/39-45
Samarium(III) fluoride
43,208-3 CAS No. 13765-24-7 1g Selenium
SmF3 FW 207.4 5g
anhydrous, powder, 99.99% Diselenium dichloride
R: 23/24/25-32 S: 26-36/37/39-45
32,351-9 CAS No. 10025-68-0 5 mL
Se2Cl2 FW 228.8
Samarium(II) iodide
99%
R: 23/24/25-34 S: 22-26-36/37/39-45
40,934-0 CAS No. 32248-43-4 1g
SmI2 FW 404.2 5g
anhydrous, powder, 99.9+%
Selenium oxychloride
Packaged under argon in ampules 33,615-7 (seleninyl chloride) 10 g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
R: 11-19-36/37 S: 16-29-33
CAS No. 7791-23-3
SeOCl2 FW 165.9
Samarium(III) iodide 97%
bp. . . . . . . . . . . . . . . . . . . . . . . 180 C/760 mm Hg (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.43 g/mL (lit.)
48,403-2 CAS No. 13813-25-7 1g
R: 14-23/24/25 S: 23-26-36/37/39-45
SmI3 FW 531.1 5g
anhydrous, powder
R: 36/37/38 S: 26-36
Selenium tetrabromide
40,062-9 CAS No. 7789-65-3 1g
Scandium SeBr4 FW 398.6 10 g
-8 mesh, 99%
R: 23/24/25-34-40 S: 22-26-27-36/37/39-45
Scandium bromide
51,752-6 CAS No. 13465-59-3 1g Selenium tetrachloride
ScBr3 FW 284.7
32,352-7 CAS No. 10026-03-6 10 g
anhydrous, powder, 99.99+%
SeCl4 FW 220.8 50 g
Packaged under argon in ampules
Density. . . . . . . . . . . . . . . . . 2.6 g/mL (lit.)
Employed in solid state synthesis of unusual clusters, R: 23/24/25-34 S: 22-26-36/37/39-45
Sc19Br28Z4, (Z=Mn, Fe, Ru or Os). These clusters are of
interest for their structure and magnetic properties.
Steinwand, S.J. et al. Inorg. Chem. 1997, 36, 6413.
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
281
Anhydrous Halides
Silicon
Dichlorosilane Trichlorosilane
CAS No. 4109-96-0 17,555-2 CAS No. 10025-78-2 5g
Cl2SiH2 FW 101.0 Cl3HSi FW 135.5 100 g
Packaged in lecture bottles 99% 500 g
The use of stainless steel control valve Z14,695-1 is Vapor density. . . . . . . . . . . . . . . 1 (vs air)
recommended. Vapor pressure. . . . . . . . . . . . . . . . . . . . 9.75 psi ( 20 C)
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.5 (vs air) Vapor pressure. . . . . . . . . . . . . . . . . . . .30.79 psi ( 55 C)
Vapor pressure. . . . . . . . . . . . . . . . . . . . . 1254 mm Hg ( 20 C) bp. . . . . . . . . . . . . . . . . . . . . . 31-32 C/760 mm Hg (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3 C/760 mm Hg (lit.) Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 F
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -122 C (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.342 g/mL (lit.)
R: 12-14-23-34 S: 26-36/37/39-45 R: 12-14-17-20/22-29-35 S: 16-26-36/37/39-43-45-7/9
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
33,339-5 99.99+% (Purity based on metals 227 g
analysis) Silver
film resistivity. . . . . . . . . . . . . . . . . . . . . . . . . >50 W-cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Silver bromide
Microelectronics
Materials for Thin Films/
liquid 25 mL
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.56 g/mL (lit.)
33,346-8 99% 10 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Vapor density. . . . . . . . . . . . . . . 2.8 (vs air) 50 g
44,957-1 anhydrous, beads, -10 mesh, 99.998% 1g
Packaged under argon in ampules 5g
Silicon tetrachloride H2O. . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 10026-04-7 20,438-2 99.999% 1g
Packaged under nitrogen in Sure/Seal bottles Applied in controlled assembly of one- 5g
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.86 (vs air) dimensional and three-dimensional silver(I) 25 g
Vapor pressure. . . . . . . . . . . . . . . . . . . . 420 mm Hg ( 37.7 C) thiolates. Hong, M. et al. Inorg. Chem.
28,938-8 Silicon tetrachloride 100 mL 1999, 38, 600.
Vapor pressure. . . . . . . . . . . . . . . . . . .1 mm Hg ( 912 C)
(Tetrachlorosilane) 800 mL
800.558.9196 (USA)
SiCl4 FW 169.9
Silver(I) fluoride
99.998%
Semiconductor grade CAS No. 7775-41-9
bp. . . . . . . . . . . . . . . . . . . . . . . 57.6 C/760 mm Hg (lit.)
AgF FW 126.9
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -70 C (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 435 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.483 g/mL (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.852 g/mL (lit.)
R: 14-36/37/38 S: 26-7/8
R: 23/24/25-34 S: 26-28-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
24,992-0 Silicon tetrachloride solution 100 mL 22,685-8 99.9+% 1g
Cl4Si FW 169.9 5g
1.0 M in dichloromethane 25 g
Ordering/Pricing: www.sigma-aldrich.com
Vapor pressure. . . . . . . . . . . . . . . . . 420 mm Hg ( 37.8 C) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.34 g/mL (lit.) 22,686-6 99% 5g
R: 20/21/22-34-40 S: 26-27-28-36/37/39-45 25 g
Silicon tetraiodide Silver(II) fluoride
46,575-5 CAS No. 13465-84-4 5g 20,092-1 (Silver difluoride) 10 g
SiI4 FW 535.7 25 g CAS No. 7783-95-1 50 g
99.9+% AgF2 FW 145.9
bp. . . . . . . . . . . . . . . . . . . . . . 287.4 C/760 mm Hg (lit.)
98+%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120.5 C (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 690 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 4.198 g/mL (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 4.57 g/mL (lit.)
R: 61-24/25-34-42/43 S: 53-26-36/37/39-45
R: 8-14-23/24/25-34 S: 17-26-36/37/39-45
Silver(I) hydrogenfluoride
43,600-3 CAS No. 12249-52-4 5g
HAgF2 FW 146.9
97%
R: 23/24/25-31-34 S: 26-27-36/37/39-45
282
Anhydrous Halides
Silver
Microelectronics
Materials for Thin Films/
SrF2 FW 125.6 Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.352 g/mL (lit.)
R: 20/21/22 S: 36 R: 14-34-40 S: 26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
45,003-0 anhydrous, powder, 99.99% 10 g
Packaged under argon in ampules 50 g Sulfuryl chloride fluoride
bp. . . . . . . . . . . . 2489 C/760 mm Hg (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 4.24 g/mL (lit.)
43,799-9 CAS No. 13637-84-8 25 g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm SO2ClF FW 118.5
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Technical Grade, 90+%
20,447-1 99.99% 10 g Packaged in cylinders
Density. . . . . . . . . . . . . . . . 4.24 g/mL (lit.) 50 g Used in the preparation of novel fluorinated
. . . . . . . . . . . . . . . . . . . . . . . . . . . . alkanesulfonyloxaziridines,1 and in the alkoxylation of
34,220-3 powder, 1 mm 100 g
fullerene C60.2 (1) J. Fluorine Chem. 1994, 68, 277. (2)
500 g
Mater. Res. Soc. Symp. Proc. 1992, 247, 293.
800.558.9196 (USA)
R: 14-23/24/25-34 S: 26-27-28-36/37/39-45
Strontium iodide
CAS No. 10476-86-5 Tantalum
SrI2 FW 341.4
Packaged under argon in ampules Tantalum(V) bromide
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.55 g/mL (lit.)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <100 ppm 40,046-7 CAS No. 13451-11-1 10 g
R: 14-34 S: 22-26-27-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Br5Ta FW 580.5
40,069-6 anhydrous, beads, -10 mesh, 99.99+% 1g 98%, powder, -8 mesh Ordering/Pricing: www.sigma-aldrich.com
10 g R: 20/21/22-34 S: 22-26-27-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
46,633-6 anhydrous, powder, 99.99+% 2g Tantalum(V) chloride
mp . . . . . . . . . . . . . . . . . . . . 515 C (lit.) 10 g
(Tantalum pentachloride)
CAS No. 7721-01-9
Sulfur TaCl5 FW 358.2
R: 22-34 S: 26-36/37/39-45
Sulfur dichloride . . . . . . . . . . . . . . . . . . . . . . . . . . . .
51,068-8 anhydrous, powder, 99.999% 5g
CAS No. 10545-99-0 Packaged under argon in ampules 25 g
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 (vs air) Used to form mixed chloro-aryloxide
compounds, such as [Ta(OC6H3-2,6-i-Pr2)2Cl3]2, which
33,032-9 Sulfur dichloride 50 g form pyridine or phosphine adducts with a distortedsix-
(Dichloro sulfide) 250 g coordinate geometry.1 Also used as a starting material for
SCl2 FW 103.0 1 kg new edge-bridged octahedral M6 cluster compounds such
Technical Grade, 80% as CsErTa6Cl18, for which electron and stability studies
Vapor pressure. . . . . . . . . . . . . . . . . . 170 mm Hg ( 20 C)
were performed.2 (1) Clark, J.R. et al. Inorg. Chem. 1997,
sulfur monochloride. . . . . . . . . . . . . . . . . . predominantly
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.621 g/mL (lit.)
36, 3623. (2) Ogliaro, F. et al. Inorg. Chem. 1998, 37,
R: 14-34-50 S: 26-36/37/39-45-61 6199.
284
Anhydrous Halides
Tantalum
Terbium(III) fluoride
Tellurium
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Microelectronics
Materials for Thin Films/
Synthesis of tin(IV) octaethylcorroles was
Thulium accomplished with this reagent. These new compounds
exhibit reversible oxidation only at the conjugated ring
Thulium(III) bromide system, not at the metal center. Kadish, K. et al. Inorg.
Chem. 1998, 37, 4573.
43,963-0 CAS No. 14456-51-0 1g bp. . . . . . . . . . . . . . . . . . . . . . . 606 C/760 mm Hg (lit.)
TmBr3 FW 408.6 5g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246 C (lit.)
anhydrous, powder, 99.99% H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
S: 26-36
20,472-2 99.99+% 10 g
50 g
Thulium(III) chloride
43,964-9 CAS No. 13537-18-3 1g Tin(IV) chloride
800.558.9196 (USA)
TmCl3 FW 275.3 5g
CAS No. 7646-78-8
anhydrous, powder, 99.9%
Packaged under argon in ampules 21,791-3 Tin(IV) chloride 5g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm (Stannic chloride fuming) 25 g
S: 26-36 SnCl4 FW 260.5 100 g
99.995%
Thulium(III) fluoride Doping polyaniline, an intensively studied polymer, with
SnCl4 stabilizes its solution in nitromethane and allows
43,214-8 CAS No. 13760-79-7 1g
solution processing.
TmF3 FW 225.9 5g
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . . . 9 (vs air)
Ordering/Pricing: www.sigma-aldrich.com
anhydrous, powder, 99.99% Vapor pressure. . . . . . . . . . . . . . . . . . .20 mm Hg ( 22 C)
Packaged under argon in ampules Vapor pressure. . . . . . . . . . . . . . . . . 18.6 mm Hg ( 20 C)
Used to improve ultraviolet and visible upconversion bp. . . . . . . . . . . . . . . . . . . . . . 114.1 C/760 mm Hg (lit.)
fluorescence in fluorinated glasses. J. Appl. Phys. 1996, mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -33 C (lit.)
80, 1965. Adv. Mater. Res. (Zug. Switz.) 1994, 1-2, 101. Density. . . . . . . . . . . . . . . . . . . . . . . . . 2.226 g/mL (lit.)
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm R: 34 S: 26-45-7/8
R: 23/24/25-32 S: 26-36/37/39-45
Tin(IV) chloride solution
Thulium(III) iodide (Stannic chloride; Tin tetrachloride)
SnCl4 FW 260.5
43,962-2 CAS No. 13813-43-9 1g Packaged under nitrogen in Sure/Seal bottles
TmI3 FW 549.6 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
24,995-5 1.0 M in dichloromethane 100 mL
anhydrous, powder, 99.9%
Density. . . . . . . . . . . . . .1.419 g/mL (lit.) 800 mL
Packaged under argon in ampules R: 34-40-52/53 S: 26-36/37/39-45-61-7/8
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 61-36/37/38 S: 53-22-36/37/39-45 35,749-9 1.0 M in heptane 100 mL
Fp. . . . . . . . . . . . . . . . . . . . . . . 34 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.874 g/mL (lit.)
R: 11-23/24/25-34 S: 16-26-36/37/39-45
286
Anhydrous Halides
Tin
Microelectronics
Materials for Thin Films/
Vapor pressure. . . . . . . . . . . . . . . . . . 43 mm Hg ( 215 C) VF4 FW 126.9
bp. . . . . . . . . . . . . . . . . . . . . . . 347 C/760 mm Hg (lit.) R: 23/24/25-34 S: 22-26-36/37/39-45
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275 C (lit.)
R: 34 S: 26-36/37/39-45 Vanadium(III) iodide
800.558.9196 (USA)
Tungsten(VI) oxychloride VOCl3 FW 173.3
Vapor pressure. . . . . . . . . . . . . . . . . . . . . 13.8 mm Hg ( 20 C)
26,501-2 (Tungsten(VI) oxide chloride; Tungsten(VI) 5g Vapor pressure. . . . . . . . . . . . . . . . . . . . . . 69 mm Hg ( 55 C)
chloride oxide) 25 g Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.84 g/mL (lit.)
CAS No. 13520-78-0 R: 14-25-34 S: 26-27-28-36/37/39-45
WOCl4 FW 341.7 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
98% 25,604-8 99.995% 10 g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 C (lit.) bp. . . . . . . . . . 126-127 C/760 mm Hg (lit.) 50 g
R: 36/37/38 S: 26-37/39 mp . . . . . . . . . . . . . . . . . . . . -77 C (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
20,089-1 99% 100 g Ordering/Pricing: www.sigma-aldrich.com
Packaged under argon in ampules Veith, M. et al., Inorg. Chem. 36, 2391 (1997)
R: 36/37/38 S: 26-37/39
Applied with NiCl2 to form a very effective catalyst for the . . . . . . . . . . . . . . . . . . . . . . . . . . . .
reductive dehalogenation of aryl halides. Zhang, Y. et al. Synth. 45,136-3 anhydrous, powder, 99.99% 10 g
Commun. 1997, 27, 4327. 50 g
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <100 ppm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38 S: 26-36 45,010-3 anhydrous, beads, -10 mesh, 99.99% 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 g
45,007-3 anhydrous, beads, -10 mesh, 99.99% 5g
mp . . . . . . . . . . . . . . . . . . . . 875 C (lit.) 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Yttrium fluoride
43,961-4 anhydrous, powder, 99.9% 5g
CAS No. 13709-49-4
25 g
YF3 FW 145.9
R: 20/21/22-36/37/38 S: 26-37/39
Ytterbium(III) fluoride . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45,137-1 anhydrous, powder, 99.99% 10 g
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Microelectronics
Materials for Thin Films/
Packaged under nitrogen in poly-coated 800 mL 39,542-0 (tetrachlorobis(tetrahydrofuran)zirconium; 5g
Sure/Seal bottles Zirconium tetrachloride tetrahydrofuran
Material may separate at room temperature. Store in complex)
freezer to homogenize CAS No. 21959-01-3
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 F ZrCl4 2OC4H8 FW 377.2
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.835 g/mL (lit.) 99%
R: 12-34-66-67 S: 16-26-33-36/37/39-45-7/9 mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 175-177 C (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 20/21/22-34 S: 22-26-36/37/39-45
36,637-4 0.5 M in tetrahydrofuran 100 mL
Packaged under nitrogen in Sure/Seal 800 mL Zirconium(IV) fluoride
bottles
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4 F CAS No. 7783-64-4
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.948 g/mL (lit.) F4Zr FW 167.2
800.558.9196 (USA)
R: 11-34 S: 16-26-33-36/37/39-45-7/9 R: 34 S: 26-27-28-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Zinc fluoride 56,146-0 powder, 99.99% 5g
25 g
20,556-7 CAS No. 7783-49-5 25 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ZnF2 FW 103.4 100 g 31,146-4 99.9% 25 g
powder, 5 mm, 99% 500 g 100 g
Vapor pressure. . . . . . . . 1 mm Hg ( 970 C)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 872 C (lit.) Zirconium(IV) iodide
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 4.95 g/mL (lit.)
R: 37/38-41 S: 26-39 40,057-2 CAS No. 13986-26-0 1g Ordering/Pricing: www.sigma-aldrich.com
ZrI4 FW 598.8 5g
Zinc iodide anhydrous, powder, 99.9%
Packaged under argon in ampules
CAS No. 10139-47-6 H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
ZnI2 FW 319.2 R: 34 S: 22-26-27-36/37/39-45
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.74 g/mL (lit.)
R: 34 S: 26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Mixed-Metal Halides
40,927-8 anhydrous, beads, -10 mesh, 99.999% 5 g
Packaged under argon in ampules 25 g Cesium chloride/sodium chloride (2:1) eutectic
H2O. . . . . . . . . . . . . . . . . . . . . <100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 55,528-2 CAS No. 15844-58-3 10 g
46,636-0 anhydrous, powder, 99.999% 5g
solid 50 g
Packaged under argon in ampules 25 g mp . . . . . . . . . . . . . . . . . . . >497-500 C
mp . . . . . . . . . . . . . . . . . . . . 445 C (lit.) R: 36 S: 26
H2O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<100 ppm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
23,001-4 99.99+% 25 g
mp . . . . . . . . . . . . . . . . . . . 446 C (lit.) 250 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
22,388-3 98+% 50 g
mp . . . . . . . . . . . . . . . . . . . 446 C (lit.) 250 g
290
Anhydrous Halides
Mixed-Metal Halides
Pb(NO3)2 FW 331.2
Titanium(III) chloride-aluminum chloride Several new polymeric complexes of lead with dialkylamino
derivatives of squaric acid were produced to study their
45,641-1 (aluminum titanium chloride) 50 g coordination modes as possible prototypes for studies of
CAS No. 12003-13-3 250 g lanthanide complexes.
(TiCl3)3 AlCl3 FW 596.0 mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 C (dec.) (lit.)
1-3 Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.53 g/mL (lit.)
R: 14-20/21/22-34 S: 26-36/37/39-45 R: 61-20/22-33-50/53-62 S: 53-45-60-61
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
20,358-0 99.999% 10 g
50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CVD & ALD Precursors 46,779-0 ReagentPlus, 99.99+% 50 g
‡99.0% 250 g
insolubles. . . . . . . . . . . . . . . . . £0.005%
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Microelectronics
Materials for Thin Films/
Si2H6 FW 62.22 20 g
52,953-2 CAS No. 6865-68-5 5g electronic grade, 99.998%
C6H24CoN9O9 FW 425.2 25 g Disilane is used for the deposition of amorphous silicon,
99.99+% epitaxial silicon and silicon based dielectrics via rapid low-
solid temperature chemical vapor depsition (LTCVD). Disilane is
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >250 C (lit.) also used in the epitaxial growth of SiGe films by
molecular beam epitaxy (MBE) in conjunction with solid
sources of germanium. Precursor for the rapid, low
Tris(ethylenediamine)rhodium(III)nitrate temperature deposition of epitaxial silicon and silicon-
based dielectrics.
57,624-7 CAS No. 480445-39-4 500 mg
Packaged in electropolished stainless steel lecture bottle
Rh(H2NCH2CH2NH2)3(NO3)3 FW 385.2 2g
with stainless steel valve and CGA 350 outlet.
99.99%
Requires 316 SS gas regulator Z17,395-9 or Z17,396-7.
800.558.9196 (USA)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300 C
bp. . . . . . . . . . . . . . . . . . . . . . -14.5 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . -132.6 C (lit.)
resistivity. . . . . . . . . . . . . . . . . . . . . . . . . . <1000 W-cm
High-Purity Gases for CVD Silane (SiH4). . . . . . . . . . . . . . . . . . . . . . . . . <1000 ppm
Gas Equipment See: Gas Equipment Page 513 Carbon dioxide (CO2). . . . . . . . . . . . . . . . . . . . . . <1 ppm
Argon (Ar) + Oxygen (O2). . . . . . . . . . . . . . . . . . . <1 ppm
Nitrogen (N2). . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Diborane Water. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Siloxanes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . <5 ppm
46,305-1 CAS No. 19287-45-7 24 L Higher silanes. . . . . . . . . . . . . . . . . . . . . . . . . .<50 ppm
B2H6 FW 27.67 48 L Chlorosilanes. . . . . . . . . . . . . . . . . . . . . . . . . .<0.2 ppm
Ordering/Pricing: www.sigma-aldrich.com
10% in hydrogen, electronic grade THC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Dibroane gas is used primarily as a p-type dopant in the Critical temperature. . . . . . . . . . . . . . . . . . . . . . 150.9 C
deposition of eptaxial and amorphous silicon thin films. References
1. Lin, H.-Y. et. al., Solid-State Electron 39, 1731 (1996)
Packaged in electropolished stainless steel lecture bottle 2. Wado, H. et. al., J. Cryst. Growth 169, 457 (1996)
with a stainless steel valve and CGA 350 outlet. 3. Huange, G.W., et al., J. Appl. Phys. 81, 205 (1997)
R: 17-20/21-36/37/38-42 S: 16-24-26-36/37/39
Requires 316 SS gas regulators Z17,395-9 or Z17,396-7.
99.99% (diborane only)
9-11% (balance hydrogen)
bp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -92.5 C
bp. . . . . . . . . . . . . . . . . . . . . . -92.5 C/760 mm Hg (lit.)
R: 12-23/24/25-36/37/38 S: 9-16-36/37/39-45
292
CVD & ALD Precursors
High-Purity Gases for CVD
Germane Methylsilane
46,302-7 CAS No. 7782-65-2 5g 46,299-3 CAS No. 992-94-9 10 g
GeH4 FW 76.67 15 g CH3SiH3 FW 46.14 20 g
electronic grade, 99.997+% electronic grade, 99.9+%
Germane gas is used in the deposition of epitaxial and Precursor to silicon carbide or alloy thin films by chemical
amorphous SiGe alloy layers used in the production of vapor deposition (CVD) and molecular beam epitaxy
high performance devices including photovoltaic cells and (MBE).
integrated circuits (IC). Precursor to germanium- Methylsilane is used in the plasma-assisted CVD of silicon
containing thin films by chemical vapor deposition (CVD) carbide (SiC) and as a precursor to the epitaxial growth of
and molecular beam epitaxy (MBE). A CVD precursor for SiGeC alloy layers via rapid thermal CVD. Recent
germanium carbide semiconducting films. developments include the use of methylsilane as a
www.sigma-aldrich.com/safc
Packaged in electropolished stainless steel lecture bottle precursor to silicon-carbon-hydrogen polymer used as
with stainless steel valve and CGA 350 outlet. photoresists.
Requires 316 SS gas regulator Z17,395-9 or Z17,396-7. Packaged in electropolished stainless steel lecture bottle
bp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -88.4 C with a stainless steel valve and CGA 350 outlet.
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -165 C
Requires 316 SS gas regulator Z17,395-9 or Z17,396-7.
Vapor density. . . . . . . . . . . . . . . . . . 1.53 (-142 C, vs air)
Vapor density. . . . . . . . . . . . . . . . . . 0.628 (-58 C, vs air)
bp. . . . . . . . . . . . . . . . . . . . . . -88.4 C/760 mm Hg (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . -57 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -165 C (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -157 C (lit.)
Nitrogen (N2). . . . . . . . . . . . . . . . . . . . . . . . . . . <2 ppm Nitrogen (N2). . . . . . . . . . . . . . . . . . . . . . . . . . <10 ppm
Oxygen (O2). . . . . . . . . . . . . . . . . . . . . . . . . . <0.5 ppm Argon + Oxygen (Ar + O2). . . . . . . . . . . . . . . . . . .<2 ppm
Carbon dioxide (CO2). . . . . . . . . . . . . . . . . . . . . . <2 ppm Methane (CH4). . . . . . . . . . . . . . . . . . . . . . . . . <50 ppm
Hydrogen (H2). . . . . . . . . . . . . . . . . . . . . . . . . <50 ppm Carbon dioxide (CO2). . . . . . . . . . . . . . . . . . . . . <10 ppm
Water (H2O). . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm Silane (SiH4). . . . . . . . . . . . . . . . . . . . . . . . . . .<50 ppm
THC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Methylchlorosilane CH3SiH2Cl. . . . . . . . . . . . . . . <100 ppm
Digermane (Ge2H6). . . . . . . . . . . . . . . . . . . . . . <20 ppm
Dimethylsilane (CH3)2SiH2. . . . . . . . . . . . . . . . . . <100 ppm
Germoxanes. . . . . . . . . . . . . . . . . . . . . . . . . . . <5 ppm
References
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
R: 12-14-20/21 S: 16-24-26-36/37/39
Critical temperature. . . . . . . . . . . . . . . . . . . . . . . . 35 C
References
1. Banzi, P., Chem. Mater. 14, 2506 (2002)
Molybdenum(VI) fluoride
2. Grant, J.M. et. al., Mat. Res. Soc. Symp. Proc. 429, 349 (1996)
3. Huang, G. W. et. al., J. Appl. Phys. 81, 205 (1997) 39,909-4 (Molybdenum hexafluoride) 227 g
R: 17-21/22-23 S: 16-24-26-36/37/39-45 CAS No. 7783-77-9
MoF6 FW 209.9
Methane 99.9+%
Packaged in cylinders
46,303-5 CAS No. 74-82-8 24 L A stainless steel control valve or gas regulator is
CH4 FW 16.04 48 L recommended.
electronic grade, 99.998+% bp. . . . . . . . . . . . . . . . . . . . . . . . 37 C/760 mm Hg (lit.)
Methane is used as a carbon source for the chemical vapor mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5 C (lit.)
deposition (CVD) of carbide and diamond thin films. Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 g/mL (lit.)
R: 34 S: 26-36/37/39-45
Packaged in electropolished stainless steel lecture bottle
with a stainless steel valve and CGA 350 outlet. Requires
316 SS gas regulators Z17,395-9 or Z17,396-7.
Phosphine
A 316 stainless steel regulator is recommended. 29,564-7 CAS No. 7803-51-2 10 g
bp. . . . . . . . . . . . . . . . . . . . . . -161 C/760 mm Hg (lit.)
PH3 FW 34.00 50 g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -183 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.716 g/mL (lit.) electronic grade, 99.9995+%
Carbon monoxide (CO). . . . . . . . . . . . . . . . . . . . .<2 ppm Phosphine is used primarily in the manufacture of III-IV
Carbon Dioxide (CO2). . . . . . . . . . . . . . . . . . . . . .<2 ppm semiconductor materials by OMCVD and as a dopant in
Water (H2O). . . . . . . . . . . . . . . . . . . . . . . . . . . <3 ppm crystalline and amorphous silicon.
Nitrogen (N2). . . . . . . . . . . . . . . . . . . . . . . . . . . <5 ppm Precursor to III-V semiconductor thin films. Also useful as a
Ethane (C2H5). . . . . . . . . . . . . . . . . . . . . . . . . . <5 ppm dopant for crystalline and amorphous silicon.
Critical temperature. . . . . . . . . . . . . . . . . . . . . . -82.1 C
R: 12 S: 9-16-33
Packaged in electropolished stainless steel lecture bottle
with a stainless steel valve and CGA 350 outlet.
Precursor to III-V semiconductor thin films. Also useful as a
dopant for crystalline and amorphous silicon.
Requires 316 SS gas regulator Z17,395-9 or Z17,396-7.
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . 1.15 (vs air)
bp. . . . . . . . . . . . . . . . . . . . . . -87.5 C/760 mm Hg (lit.)
Carbon monoxide (CO). . . . . . . . . . . . . . . . . . . . .<1 ppm
Carbon dioxide (CO2). . . . . . . . . . . . . . . . . . . . . . <1 ppm
Water (H2O). . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Nitrogen (N2). . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Methane (CH4). . . . . . . . . . . . . . . . . . . . . . . . . .<1 ppm
Argon (Ar). . . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Oxygen (O2). . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Arsine (AsH3). . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Critical temperature. . . . . . . . . . . . . . . . . . . . . . . 51.3 C
R: 17-18-26-37 S: 9-16-36/37/39-45
293
CVD & ALD Precursors
High-Purity Gases for CVD
Microelectronics
Materials for Thin Films/
References
1. Quinn, L.J. et. al., Thin Solid Films 296, 7 (1997) 46,312-4 CAS No. 13537-03-6 1g
2. Idem, Ibid. 289, 227 (1996) PD3 FW 37.02 5g
3. Hu, C. C. et. al. , Ibid. 288, 147 (1996) electronic grade, 98 atom % D
R: 12-17-20 S: 9-16-33-36/37/39
Packaged in electropolished stainless steel lecture bottle
with a stainless steel valve and CGA 350 outlet. Requires
Trimethylboron 316 SS gas regulator Z17,395-9 or Z17,396-7.
46,309-4 CAS No. 593-90-8 5g Gas
bp. . . . . . . . . . . . . . . . . . . . . . -87.5 C/760 mm Hg (lit.)
B(CH3)3 FW 55.91 10 g R: 17-18-26-37 S: 9-16-36/37/39-45
electronic grade, 98.35+%
Trimethylboron is used as an organometallic precursor for Silane-d4
the CVD of boron-carbon containing films and as a boron
800.558.9196 (USA)
source in the deposition of borophosphosilicate glass 46,311-6 CAS No. 13537-07-0 1g
(BPSG). SiD4 FW 36.14 5g
Packaged in electropolished stainless steel lecture bottle electronic grade, 98 atom % D
with a stainless steel valve and CGA 350 outlet. Packaged in electropolished stainless steel lecture bottle
Precursor to boron carbide thin films by chemical vapor with stainless steel valve and CGA 350 outlet.
deposition (CVD). Mater. Lett. 1996, 27, 327. Requires 316 SS gas regulator Z17,395-9 or Z17,396-7.
<I> 99.9% chemical purity
Requires 316 SS gas regulator Z17,395-9 or Z17,396-7. bp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -112 C
bp. . . . . . . . . . . . . . . . . . . . . . -20.2 C/760 mm Hg (lit.) mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -185 C
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . -161.5 C (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.114 g/mL (lit.) Ordering/Pricing: www.sigma-aldrich.com
Hydrogen (H2). . . . . . . . . . . . . . . . . . . . . . . . . <50 ppm R: 17-20/21-36/37/38-42 S: 16-24-26-36/37/39
Oxygen (O2). . . . . . . . . . . . . . . . . . . . . . . . . . . <1 ppm
Dimethylethylborane [B(CH3)2C2H5]. . . . . . . . . . . . . . <1.5% Trimethylboron-d9
Nitrogen (N2). . . . . . . . . . . . . . . . . . . . . . . . . . <10 ppm
Trimethylamine (TMA). . . . . . . . . . . . . . . . . . . <1000 ppm 46,342-6 CAS No. 6063-55-4 5g
Methane (CH4). . . . . . . . . . . . . . . . . . . . . . . . <100 ppm
B(CD3)3 FW 64.97 10 g
Carbon dioxide (CO2). . . . . . . . . . . . . . . . . . . . . <10 ppm
References
electronic grade, 99 atom % D
Lewis. J.S. et. al., Mater. Lett. 29, 327 (1996) The deposition of trimethylboron-d9 derived boron-carbon
R: 17-34 S: 7-23-26-36/37/39-43-45 films can result in increased device performance.
Packaged in electropolished stainless steel lecture bottle
with a stainless steel valve and CGA 350 outlet.
Requires 316 SS gas regulator Z17,395-9 or Z17,396-7.
99.4% chemical purity
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . . 2.3 (vs air)
bp. . . . . . . . . . . . . . . . . . . . . . -20.2 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . -161.5 C (lit.)
R: 17-34 S: 7-23-26-36/37/39-43-45
294
CVD & ALD Precursors
High-Purity Gases for CVD: Halogenated Gases
BF3 FW 67.81
bp. . . . . . . . . . . . . . . . . . . . . . . . . . -100 C/760 mm Hg (lit.) CVD. Mixtures of SiF4-SiH4-H2 have recently been used to
Microelectronics
Materials for Thin Films/
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -127 C (lit.) deposit polycrystalline silicon thin films via remote plasma
R: 14-26-35 S: 9-26-28-36/37/39-45 chemical vapor deposition (RPCVD)., Such fluorinated thin
. . . . . . . . . . . . . . . . . . . . . . . . . . . . films show visible photoluminescence (PL) at room
46,308-6 electronic grade, 99.99+% 20 g temperature.
Packaged in electropolished stainless 100 g Packaged in electropolished stainless steel lecture bottle
steel lecture bottle with stainless steel with a stainless steel valve and CGA 330 outlet.
valve and CGA 330 outlet. Recently used to prepare low temperature silicon films by
Employed recently in a study of conductivity enhancement chemical vapor deposition (CVD). Diffus. Defect Data, Pt.
of CaF2 by grain boundary activation with Lewis acids. B 1996, 51-52, 149. J. Electrochem. Soc. 1996, 143,
Solid State Ionics 1996, 86-88, 581. 2640.
Requires 316 SS gas regulator Z17,395-9 or Z17,396-7. Requires 316 SS gas regulator Z17,395-9 or Z17,396-7.
Nitrogen(N2) + oxygen (O2). . . . . . . . . . . . . . . . . <10 ppm bp. . . . . . . . . . . . . . . . . . . . . . . -86 C/760 mm Hg (lit.)
Sulfur dioxide (SO2). . . . . . . . . . . . . . . . . . . . . . <10 ppm
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -90 C (lit.)
Carbon dioxide (CO2). . . . . . . . . . . . . . . . . . . . . <20 ppm
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 3.57 g/mL (lit.)
Silicon tetrafluoride (SiF4). . . . . . . . . . . . . . . . . . . <20 ppm
Hydrogen fluoride (HF). . . . . . . . . . . . . . . . . . . . <50 ppm
Critical temperature. . . . . . . . . . . . . . . . . . . . . . -12.3 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Nitrogen (N2). . . . . . . . . . . . . . . . . . . . . . . . . . . <3 ppm
Argon + oxygen (Ar + O2). . . . . . . . . . . . . . . . . . . <1 ppm
29,502-7 99.5+% 170 g
Methane (CH4). . . . . . . . . . . . . . . . . . . . . . . . . <10 ppm
Packaged in lecture bottles
Carbon dioxide (CO2). . . . . . . . . . . . . . . . . . . . . . <1 ppm
Stainless steel, Z14,695-1 or Monel, Z14,697-8 control Carbon monoxide (CO). . . . . . . . . . . . . . . . . . . <0.5 ppm
valves or stainless steel Z14,850-4, Z14,851-2 with T- Critical temperature. . . . . . . . . . . . . . . . . . . . . . -14.2 C
purge valve Z15,166-1 or Monel Z40,598-1, Z40,600-7 References
gas regulators are recommended. 1. Quinn, L. J. et. al. , Thin Solid Films 296, 7 (1997)
Vapor density. . . . . . . . . . . . . . . . . . . . 2.38 (21 C, vs air) 2. Idem., Ibid. 289, 227 (1996)
3. Cicala, G. et. al., J. Appl. Phys. 80, 6564 (1996)
Carbon tetrafluoride R: 14-26/27/28-31-34 S: 23-26-36/37/39-45
Metal Alkoxides See: Sol-Gel Precursors Page 349
29,573-6 CAS No. 75-73-0 27 g
CF4 FW 88.00
99.9%
Packaged in lecture bottles
Brass control valve Z14,694-3 or either of brass regulators
Z14,670-6 and Z14,671-4 is recommended.
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . 3.04 (vs air)
bp. . . . . . . . . . . . . . . . . . . . . . -130 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -184 C (lit.)
S: 38
295
CVD & ALD Precursors
Metal b-dikenonates: Acetylacetonates (ACAC)
Microelectronics
Materials for Thin Films/
Vapor pressure. . . . . . . . . . . . . . . . . . . . . . . 6 mm Hg ( 20 C)
n20 Cerium(III) acetylacetonate hydrate
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.452 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . . . .140.4 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -23 C (lit.) 38,140-3 (cerium(III) 2,4-pentanedionate) 50 g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 F CAS No. 206996-61-4 250 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.975 g/mL (lit.) Ce(C2H7O2)3 xH2O FW 437.4
R: 10-22 S: 21-23-24/25 R: 36/37/38-63 S: 7-26-36/37/39
O
C CH Cesium acetylacetonate
CH 3
3
800.558.9196 (USA)
H R: 20/21/22-36/37/38-40 S: 26-36/37/39
Chromium(III) acetylacetonate
(Chromium(III) 2,4-pentanedionate)
Aluminum acetylacetonate CAS No. 21679-31-2
Cr(C5H7O2)3 FW 349.3
20,824-8 (Aluminum 2,4-pentanedionate) 5g Used to modify the surface properties of solid polyurethanes
CAS No. 13963-57-0 100 g formed in its presence.
Al(C5H7O2)3 FW 324.3 500 g bp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 340 C
99% mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210 C Ordering/Pricing: www.sigma-aldrich.com
bp. . . . . . . . . . . . . . . . . . . . . . . 315 C/760 mm Hg (lit.) References
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 190-193 C (lit.) Lipatov, Y.S., J. Polym. Mater. 14, 263 (1997)
R: 25-36/37/38 S: 26-36/37/39-45 R: 20/21/22-36/37/38 S: 23-26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CH
3 57,408-2 99.99% 5g
C O
25 g
CH Al . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C O
20,223-1 97% 5g
CH
3
3
bp. . . . . . . . . . . . 340 C/760 mm Hg (lit.) 100 g
mp . . . . . . . . . . . . . . . . . . . 210 C (lit.) 500 g
Chromium(III) trifluoroacetylacetonate
Barium acetylacetonate hydrate 49,569-7 CAS No. 14592-89-3 5g
Cr(C5H4F3O2)3 FW 511.2
33,905-9 (Barium 2,4-pentanedionate) 50 g 99.9+%
CAS No. 304695-31-6 250 g R: 20/21/22-36/37/38-63 S: 26-36
Ba(C5H7O2)2 xH2O FW 335.5
R: 20/22 S: 28
296
CVD & ALD Precursors
Metal b-dikenonates: Acetylacetonates (ACAC)
Microelectronics
Materials for Thin Films/
I-330-0 (2,4-pentanedione indium(III) derivative) 1g 51,765-8 CAS No. 86322-74-9 1g
CAS No. 14405-45-9 5g Lu(C5H7O2)3 xH2O FW 472.3
In(OCCH3CHOCCH3)3 FW 412.1 99.9+%
99.99+% solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187-189 C (lit.) mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 158-163 C (lit.)
R: 20/21/22-36/37/38-40 S: 26-36 R: 20/21/22-36/37/38-63 S: 26-36
800.558.9196 (USA)
R: 20/21/22-36/37/38-40 S: 45 R: 20/21/22-36/37/38-40 S: 26-36/37/39
97%
CAS No. 3264-82-2 mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 263-264 C (lit.)
Ni(C5H7O2)2 FW 256.9 R: 20/21/22-36/37/38-40 S: 26-36/37/39
R: 49-22-43 S: 53-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
28,365-7 95% 5g
Rubidium acetylacetonate
mp . . . . . . . . . . . . . . . . 240 C (dec.) (lit.) 25 g
39,261-8 CAS No. 66169-93-5 1g
50 g RbC5H7O2 FW 184.6 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,950-9 Technical Grade, 90% 25 g R: 20/21/22-36/37/38-40 S: 26-28-36/37/39-45
mp . . . . . . . . . . . . . . . .230 C (dec.) (lit.) 100 g
Ruthenium(III) acetylacetonate
Nickel(II) hexafluoroacetylacetonate hydrate
28,276-6 (2,4-Pentanedione ruthenium(III) derivative) 1 g
33,970-9 CAS No. 304695-77-0 1g CAS No. 14284-93-6 5g
Ni(C5HF6O2)2 xH2O FW 472.8 5g Ru(C5H7O2)3 FW 398.4
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
98% 97%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 213 C (dec.) (lit.) mp . . . . . . . . . . . . . . . . . . . . . . . . . . 260 C (dec.) (lit.)
Microelectronics
Materials for Thin Films/
Microelectronics
Materials for Thin Films/
and magnetic properties and synthetic applications.
solid Vanadium(III) acetylacetonate
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 127 C (dec.) (lit.)
References 22,711-0 (2,4-Pentanedione vanadium(III) 10 g
Spyroulias, G.A. et al., Chem. Commun. 783 (1997) derivative) 50 g
R: 20/21/22-36/37/38-63 S: 26-36/37/39-45 CAS No. 13476-99-8 250 g
V(C5H7O2)3 FW 348.3
Thallium(I) acetylacetonate 97%
R: 36/37/38 S: 26-36
15,388-5 (2,4-pentanedione thallium(I) derivative) 5g
CAS No. 25955-51-5 25 g Vanadium(IV)-oxy acetylacetonate
TlC5H7O2 FW 303.5
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 C (lit.) (Vanadyl acetylacetonate)
800.558.9196 (USA)
R: 26/28-33-51/53 S: 13-28-45-61 CAS No. 3153-26-2
OV(C5H7O2)2 FW 265.2
Thallium(I) hexafluoroacetylacetonate mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .254-257 C
R: 22-36/37/38 S: 22-26-36
40,527-2 CAS No. 15444-43-6 1g CH
3
TlC5HF6O2 FW 1367 5g C O
R: 26/28-33-51/53 S: 13-28-45-61 CH VO
C O
Tin(IV) bis(acetylacetonate) dibromide CH
3
2
C O
thickness) ZnO-In2O3 films. CH Ba
Novel MOCVD precursor for the preparation of high- C O
crystallinity (Zn,Fe)Fe2O4 films and magnetic property C(CH )
33
2
measurements of these films.
References
1. Minami, T. et al., J. Vac. Sci. Technol., A 15, 1069 (1997)
2. Mochizuki, S. et al., J. Phys. IV 7(C1), 491 (1997)
R: 20/21/22-36/37/38-63 S: 26-36/37/39-45 Calcium bis(6,6,7,7,8,8,8,-heptafluoro-2,2-dimethyl-3,5-oc-
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
48,099-1 99.995% 5g tanedionate)
solid 25 g
mp . . . . . . . . . . . . . . . . 136 C (dec.) (lit.) 49,515-8 CAS No. 36885-29-7 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Ca(OCC(CH3)3CHCOCF2CF2CF3)2 FW 630.4 25 g
13,230-6 powder 5g 99.9+%
mp . . . . . . . . . . . . .136-138 C (dec.) (lit.) 100 g solid
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Microelectronics
Materials for Thin Films/
49,516-6 CAS No. 36885-30-0 5g 43,407-8 CAS No. 35733-23-4 1g
Sr(OCC(CH3)3CHCOCF2CF2CF3)2 FW 678.0 25 g Er(OCC(CH3)3CHCOC(CH3)3)3 FW 717.1 5g
99.99% 99.9+%
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95-100 C (lit.) Europium(III)-tris-(2,2,6,6-tetramethyl-3,5-heptanedio-
nate)
Tetramethylheptanedionates (TMHD) 46145 CAS No. 15522-71-1 250 mg
Eu(OCC(CH3)3CHCOC(CH3)3)3 FW 701.8 1g
Aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate) purum p.a., for NMR-spectroscopy
S: 22-24/25
39,728-8 CAS No. 14319-08-5 1g
800.558.9196 (USA)
Al(OCC(CH3)3CHCOC(CH3)3)3 FW 576.8 5g Iron tris(2,2,6,6-tetramethyl-3,5-heptanedionate)
98%
46,820-7 CAS No. 14876-47-2 1g
Barium bis(2,2,6,6-tetramethyl-3,5-heptanedionate) hy- Fe(OCC(CH3)3CHCOC(CH3)3)3 FW 605.6 10 g
drate R: 36/37/38 S: 26-36
Microelectronics
Materials for Thin Films/
3
Good precursor for zirconia thin films, with deposition at
lower temperatures promoted by Pd(hfac)2, or yttria- . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stabilized zirconia films on silicon and on stainless steel 42,379-3 1.0 M in hexanes 100 mL
substrates. Zirconium source precursor for good quality Packaged under nitrogen in Sure/Seal 800 mL
MOCVD of PNZT. bottles
solid bp. . . . . . . . . . . . . . . . . . . . . . 68-69 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 332-339 C (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.695 g/mL (lit.)
References R: 11-14-17-34-48/20-51/53-62-65-67 S: 16-36/37/39-43-45-
1. Zhang, Y. et al., J. Amer. Chem. Soc. 119, 9295 (1997) 61-62
2. Bourhila, N. et al. , Proc. Electrochem. Soc. 97-25, 417 (1997) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38 S: 26-36 25,721-4 25 wt. % in toluene 100 g
Packaged under nitrogen in Sure/Pac 1 kg
metal cylinders
800.558.9196 (USA)
Metal-Organic Precursors Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.848 g/mL (lit.)
R: 14-17-23/24/25-34 S: 16-26-36/37/39-45
Aluminum . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19,271-6 25 wt. % in toluene 100 g
Alane-trimethylamine complex Packaged under nitrogen in poly-coated 700 g
Sure/Seal bottles
45,579-2 CAS No. 16842-00-5 5g Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1 F
AlH3 N(CH3)3 FW 89.12 Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.848 g/mL (lit.)
R: 14-17-23/24/25-34 S: 16-26-36/37/39-45
95% Ordering/Pricing: www.sigma-aldrich.com
Organometallic chemical vapor deposition (OMCVD) in
Trimethylaluminum
the presence of borane-ammonia gives mixed aluminum
nitride/boron nitride (AlN/BN) thin films. Chem. Mater. (Aluminumtrimethanide)
1996, 8, 2839. CAS No. 75-24-1
R: 14/15-17-34 S: 16-26-36/37/39-45
(CH3)3Al FW 72.09
bp. . . . . . . . . . . . . . . . . . . . . . . . 125-126 C/760 mm Hg (lit.)
Triethylaluminum mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.752 g/mL (lit.)
CAS No. 97-93-8 R: 14-17-34 S: 16-43-45
Al(C2H5)3 FW 114.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 11-14-17-34-48/20-51/53-62-65-67 S: 9-16-33-43-45-61-62 59,777-5 electronic grade, 99.99999+% (ultra 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . pure)
46,258-6 electronic grade, 99.999% 50 mL . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100 mL 46,257-8 99.999%, electronic grade 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 g
45,577-6 repurified, 99.0% 50 g
304
CVD & ALD Precursors
Metal-Organic Precursors: Aluminum
3
R N N NR
2 2
R R
Antimony
Tris(dimethylamino)antimony
55,397-2 CAS No. 7289-92-1 25 mL
[(CH3)2N]3Sb FW 254.0
99.99%
liquid
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 F
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
CH CH
3 3
1 CH N CH
H-NMR spectrum of Aldrich product 46,257-8, lot 92817LA 3 3
N Sb N
CH CH
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3
Tributylbismuthine
Trimethylarsine
48,546-2 CAS No. 3692-81-7 5g
55,131-7 CAS No. 593-88-4 1g C12H27Bi FW 380.3
As(CH3)3 FW 120.0 5g 97%
99.9% as chemical purity R: 17 S: 16-27-36/37/39
liquid
bp. . . . . . . . . . . . . . . . . . . . . . . . 51 C/760 mm Hg (lit.) Triphenylbismuth
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -13 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.133 g/mL (lit.) 39,895-0 CAS No. 603-33-8 5g
R: 23/25-50/53 S: 20/21-28-45-60-61
(C6H5)3Bi FW 440.3 25 g
99%
www.sigma-aldrich.com/safc
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78-80 C (lit.)
R: 20/21/22 S: 36/37
Bi
Triphenylbismuth carbonate
42,741-1 CAS No. 47252-14-2 1g
C19H15BiO3 FW 500.3 10 g
mp . . . . . . . . . . . . . . . . . 164-165 C (lit.)
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Triphenylbismuth dichloride
Microelectronics
Materials for Thin Films/
Tris(2-methoxyphenyl)bismuthine
1
H-NMR spectrum of Aldrich product 55,131-7, lot 94813CO 48,527-6 CAS No. 83724-41-8 1g
C21H21BiO3 FW 530.4 10 g
Triphenylarsine
Boron
(Arsinetriphenyl)
CAS No. 603-32-7 Borane–ammonia complex
(C6H5)3As FW 306.2
R: 23/25-50/53 S: 20/21-28-45-60-61 28,771-7 CAS No. 13774-81-7 1g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . H3N BH3 FW 30.87 10 g
49,273-6 99.99% 5g 90%, Technical Grade
solid Mild, efficient, and stereoselective reducing agent for
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 58.5-63.5 C (lit.) aldehydes and ketones in protic or nonprotic media.
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
T8,190-6 97% 5g Tetrahedron Lett. 1980, 693, 697.
R: 5 S: 14-15-26-36/37/39
mp . . . . . . . . . . . . . . . . . . . . 60-62 (lit.) 25 g
100 g
Borane–tetrahydrofuran complex solution
Triphenylarsine oxide 43,687-9 CAS No. 14044-65-6 100 mL
C4H11BO FW 85.94 800 mL
11,589-4 CAS No. 1153-05-5 5g
1.5 M in tetrahydrofuran and 8L
(C6H5)3AsO FW 322.2 25 g
ether, Technical Grade 18 L
97% bp. . . . . . . . . . . 35 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 194-196 C (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -22 F
R: 23/25-50/53 S: 20/21-28-45-60-61
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.846 g/mL (lit.)
R: 11-14/15-19-22-36/37/38-66-67 S: 16-26-29-33-36
Bismuth
Bis(acetato-O)triphenylbismuth
48,572-1 CAS No. 7239-60-3 1g
C22H21BiO4 FW 558.4 10 g
98%
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . ~170 C (D) (lit.)
307
CVD & ALD Precursors
Metal-Organic Precursors: Boron
Microelectronics
Materials for Thin Films/
Triethylborane solution
(C2H5)3B FW 97.99
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dimesitylborane 59,437-7 2.0 M in ether 100 mL
Density. . . . . . . . . . . . . . . . 0.703 g/mL
31,034-4 (bis(2,4,6-trimethylphenyl)borane) 250 mg R: 17-34 S: 7-23-26-36/37/39-43-45
CAS No. 51458-06-1 1g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C18H23B FW 250.2 19,503-0 1.0 M in hexanes 100 mL
90% Packaged under nitrogen in Sure/Seal 800 mL
borane and monomesitylborane. . . . . . . . . . . . . . . . . . 5% bottles
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 160-163 C (lit.) Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -9 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.675 g/mL (lit.)
Tetrakis(dimethylamino)diborane R: 11-34-48/20-51/53-62-65-67 S: 16-26-33-36/37/39-45-61-
800.558.9196 (USA)
62
47,667-6 CAS No. 1630-79-1 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
17,970-1 1.0 M in tetrahydrofuran 100 mL
C8H24B2N4 FW 197.9
Packaged under nitrogen in Sure/Seal 800 mL
97%
bottles
liquid
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 F
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4756 (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.865 g/mL (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . 55-57 C/2.5 mm Hg (lit.)
R: 11-19-34 S: 16-26-33-36/37/39-43-45
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.926 g/mL (lit.)
R: 36/37/38 S: 26-36 Trimesitylborane
Ordering/Pricing: www.sigma-aldrich.com
22,517-7 CAS No. 7297-95-2 1g
Tributylborane
C27H33B FW 368.4 10 g
CAS No. 122-56-5 97%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.446 (lit.)
bp. . . . . . . . . . . . . . . . . . . . 147-148 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -16 C (lit.) Bis(ethylcyclopentadienyl)cobalt
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.817 g/mL (lit.) 51,064-5 CAS No. 55940-05-1 1g
R: 11-36/37/38 S: 16-26-27-36/37/39
C14H12Co FW 239.2 5g
CH
3
NCH
3 Bis(pentamethylcyclopentadienyl)cobalt
CH N B NCH
3 3
CH
3
CH
3 40,178-1 (decamethylcobaltocene) 1g
CAS No. 74507-62-3
C20H30Co FW 329.4
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >210 C (lit.)
CH CH
Tris(pentafluorophenyl)borane 3 3
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
CH CH
3 3
CH
Co 3
44,259-3 CAS No. 1109-15-5 1g
Microelectronics
Materials for Thin Films/
CH
3
CH CH
(C6F5)3B FW 512.0 5g 3 3
95% CH CH
3 3
A versatile reagent widely used in the preparation of d0
arene and other organometallic complexes useful as
polymerization catalysts. Cyclopentadienyl cobalt dicarbonyl
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 126-131 C (lit.)
R: 36/37/38 S: 26-36 24,525-9 (Dicarbonylcyclopentadienyl cobalt) 5g
CAS No. 12078-25-0 25 g
C5H5Co(CO)2 FW 180.0
Cerium Technical Grade
Packaged in ampules
Bis(cyclopentadienyl)chromium bp. . . . . . . . . . . . . . . . . . . . 139-140 C/710 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 F
38,100-4 (Di(cyclopentadienyl)chromium; 1g R: 10-23/24/25 S: 36/37/39-45
Chromocene)
CAS No. 1271-24-5 Co(CO)
2
Cr(C5H5)2 FW 182.2
95%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 168-170 C (lit.)
R: 20/21/22-36/37/38 S: 26-37/39
Erbium
Cr
Tris[N,N-bis(trimethysilyl)amide]erbium(III)
54,785-9 CAS No. 103457-72-3 1g
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 166-170 C (lit.)
Bis(pentamethylcyclopentadienyl)chromium R: 11-14/15-34 S: 16-26-36/37/39-43-45-7/8
Tris(cyclopentadienyl)cerium
49,357-0 CAS No. 1298-53-9 1g
Ce(C5H5)3 FW 335.4 5g
99.9%
R: 11-14/15 S: 43-7/8
309
CVD & ALD Precursors
Metal-Organic Precursors: Erbium
Tris(butylcyclopentadienyl)erbium Gallium
49,599-9 CAS No. 153608-51-6 1g Tris(dimethylamino)gallane dimer
Er(C5H4C4H9)3 FW 530.9 5g
99.9% 54,653-4 (Ga(N(CH3)3)2)2 FW 403.9 1g
solid solid 5g
bp. . . . . . . . . . . . . . . . . . . . . . . .240 C/0.1 mm Hg (lit.) 98%
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205 F mp . . . . . . . . . . . . . . . . . . . . . . . . . . 104-105.5 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.309 g/mL (lit.) R: 11-14-34 S: 16-26-36/37/39-45
R: 17 S: 16-36/37/39 R R
R R
R N N NR
2 2
Ga Ga R = CH
3
Er R N N NR
R = CH (CH ) CH 2 2
2 22 3 R R
Microelectronics
Materials for Thin Films/
S: 16-33 (CH3)3GeGe(CH3)3 FW 235.5
Technical Grade
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.456 (lit.)
Gadolinium bp. . . . . . . . . . . . . . . . . . . . 137-138 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 C (lit.)
Tris[N,N-Bis(trimethylsilyl)amide]gadolinium(III) Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.175 g/mL (lit.)
54,782-4 CAS No. 35789-03-8 1g R: 11-20/21/22 S: 16-36
Gd(N(Si(CH3)3)2)3 FW 638.4
98% Hexaphenyldigermanium
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67-90 C
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F 44,762-5 CAS No. 2816-39-9 1g
R: 11-14/15-34 S: 16-26-36/37/39-43-45-7/8 C36H30Ge2 FW 607.9 5g
800.558.9196 (USA)
97%
Tris(cyclopentadienyl)gadolinium R: 20/21/22 S: 36
Tetraphenylgermanium Bis(indenyl)dimethylhafnium
56,619-5 CAS No. 49596-06-7 1g
28,820-9 CAS No. 1048-05-1 1g
C24H20Ge FW 381.1 (C9H7)2Hf(CH3)2 FW 438.9 5g
98%
97%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107-109 C
R: 20/21/22-36/37/38 S: 26-36
Tetrapropylgermanium Dimethylbis(cyclopentadienyl)hafnium
R: 20/21/22 S: 36
Materials for Thin Films/
Microelectronics
Tributylgermanium hydride CH
3
Hf CH
3
Tetrakis(dimethylamino)hafnium Indium
45,519-9 CAS No. 19962-11-9 5g Triethylindium
Hf(N(CH3)2)4 FW 354.8 25 g
99.99% 57,091-5 CAS No. 923-34-2
Purity excludes ~2000 ppm Zr. In(CH2CH3)3 FW 202.0
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26-29 C electronic grade
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 F R: 17-34 S: 6-16-26-27-36/37/39-45
R: 14-34 S: 26-36/37/39-43-45
CH
3
N
CH
3 Trimethylindium
CH CH
3 3
N Hf N
CH
3 CH 46,363-9 CAS No. 3385-78-2
N 3
CH
3
CH
3
In(CH3)3 FW 159.9
Iron
Microelectronics
Materials for Thin Films/
3 3
CH CH CH
3 2 N 3 CH CH
CH CH CH 3 3
3 2 3
Butylferrocene
32,523-6 CAS No. 31904-29-7 10 g
Fe(C5H5)(C5H4C4H9) FW 234.1 100 g
97%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.577 (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >230 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.172 g/mL (lit.)
800.558.9196 (USA)
CH CH CH CH
2 2 2 3
Fe
tert-Butylferrocene
13
C-NMR spectrum of Aldrich product 55,312-3, lot 91823BO
46,902-5 CAS No. 1316-98-9 1g
Fe(C5H5)(C5H4C(CH3)3) FW 234.1 5g Ordering/Pricing: www.sigma-aldrich.com
97%
1,1’-Diethylferrocene
51,744-5 CAS No. 1273-97-8 5 mL
Fe(C5H4C2H5)2 FW 236.1
98%
liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.58 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 284 C/760 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.18 g/mL (lit.)
CH CH
2 3
Fe
CH CH
3 2
1
H-NMR spectrum of Aldrich product 55,312-3, lot 91823BO
312
CVD & ALD Precursors
Metal-Organic Precursors: Iron
Ferrocene Bis(pentamethylcyclopentadienyl)magnesium
F40-8 (Di(cyclopentadienyl)iron; 5g 51,254-0 CAS No. 74507-64-5 1g
Bis(cyclopentadienyl)iron) 100 g C2OH30Mg FW 94.56 5g
CAS No. 102-54-5 500 g 99.999%, electronic grade
Fe(C5H5)2 FW 186.0 mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230 C (dec.)
98% R: 17 S: 16-26-36/37/39
Vapor pressure. . . . . . . . . . . . . . . . . . . . . 0.03 mm Hg ( 40 C) CH
3
CH
3
bp. . . . . . . . . . . . . . . . . . . . . . . . . . . 249 C/760 mm Hg (lit.) CH CH
3 3
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174-176 C (lit.) Mg
CH
3
Absorbance (l). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 358 nm CH
3
CH CH
R: 11-22 S: 16 3 3
CH CH
3 3
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Fe
Bis(propylcyclopentadienyl)magnesium
47,945-4 CAS No. 114504-74-4 1g
Tricarbonyl(cyclooctatetraene)iron Mg(C5H4C3H7)2 FW 238.7 5g
96%
27,591-3 CAS No. 12093-05-9 250 mg R: 17 S: 16-36/37/39
C8H8Fe(CO)3 FW 244.0 1g
98%
R: 20/21/22 S: 36 Manganese
Acetylcyclopentadienylmanganese tricarbonyl
Lanthanum
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Bis(ethylcyclopentadienyl)magnesium
47,944-6 CAS No. 114460-02-5 1g
Mg(C5H4C2H5)2 FW 210.6 5g
97%
R: 17 S: 16-36/37/39
313
CVD & ALD Precursors
Metal-Organic Precursors: Manganese
Bis(tetramethylcyclopentadienyl)manganese(II)
56,242-4 CAS No. 101932-75-6 1g (Methylcyclopentadienyl)manganese tricarbonyl
Microelectronics
Materials for Thin Films/
CO CH
3
Mn
OC CO
CO
Ethylcyclopentadienylmanganese tricarbonyl
52,985-0 CAS No. 12116-56-2 1g
Mercury
C10H5MnO3 FW 228.1
liquid Bis(trimethylsilylmethyl)mercury
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.579 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 245 C/760 mm Hg (lit.)
33,205-4 CAS No. 13294-23-0 1g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.363 g/mL (lit.) C8H22HgSi2 FW 375.0 5g
R: 26/27/28-33-50/53 S: 13-28-36-45-60-61
800.558.9196 (USA)
CH CH
2 3
Mn
OC
CO
CO Dimethylmercury
32,808-1 (Methylmercury) 10 g
CAS No. 593-74-8
(CH3)2Hg FW 230.7
Hydroxyisopropylcyclopentadienylmanganese tricarbonyl 95%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.543 (lit.)
52,986-9 CAS No. 33086-66-7 1g bp. . . . . . . . . . . . . . . . . . . . . . 93-94 C/760 mm Hg (lit.)
C11H7MnO4 FW 258.1 mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -43 C (lit.) Ordering/Pricing: www.sigma-aldrich.com
96% Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 2.961 g/mL (lit.)
solid
R: 26/27/28-33-50/53 S: 13-28-36-45-60-61
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43-46 C (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230 F CH
3
Hg CH
3
R: 26/27/28 S: 26-28-36-45
CH
3
C OH
Mn
OC CO CH
CO 3
314
CVD & ALD Precursors
Metal-Organic Precursors: Molybdenum
H
OC Mo CO Mo
OC CO
OC CO CO
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Dicarbonyl(pentamethylcyclopentadienyl)molybdenum,
Bis(cyclopentadienyl)molybdenum dichloride dimer
25,644-7 CAS No. 12184-22-4 100 mg 48,664-7 CAS No. 12132-04-6 1g
C10H2Cl2Mo FW 289.0 500 mg C24H30Mo2O4 FW 574.4 5g
97% 97%
R: 36/37/38 S: 26-37/39 R: 26/27/28 S: 53-36/37/39-45
R: 20/21/22 S: 36
Bis(diethyldithiocarbamato)dioxomolybdenum(VI)
Microelectronics
Materials for Thin Films/
Molybdenumhexacarbonyl
33,769-2 CAS No. 19680-83-2 5g
C10H22MoN2O2S4 FW 426.5 25 g (Hexacarbonylmolybdenum)
R: 20/21/22-36/37/38 S: 26-36 CAS No. 13939-06-5
Mo(CO)6 FW 264.0
[1,2-Bis(diphenylphosphino)ethane]tetracarbonylmolyb- R: 26 S: 36/37/39-45
denum OC CO
OC Mo CO
OC CO
34,805-8 CAS No. 15444-66-3 1g
C30H24MoO4P2 FW 606.4 5g
97%
R: 20/21/22 S: 36
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
57,776-6 99.9+% 5g
(1,1’-Bis(diphenylphosphino)ferrocene)tetracarbonylmo- Purified by sublimation 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
lybdenum(0) 19,995-8 98% 10 g
Vapor density. . . . . . . . . . . . . . 9.1 (vs air) 50 g
55,511-8 CAS No. 67292-28-8 1g mp . . . . . . . . . . . . . . . 150 C (dec.) (lit.) 250 g
(CO)4Mo(P(C6H5)2C5H4)2Fe FW 762.4 5g Density. . . . . . . . . . . . . . . 1.96 g/mL (lit.)
96%
mp . . . . . . . . . . . . . . . . . . . . . . . 256 C (decomposition) (Propylcyclopentadienyl)molybdenum tricarbonyl dimer
cis-Tetracarbonylbis(piperidine)molybdenum
32,909-6 CAS No. 65337-26-0 5g
C14H20MoN2O4 FW 376.3
R: 20/21/22-36/37/38 S: 26-36
315
CVD & ALD Precursors
Metal-Organic Precursors: Molybdenum
Microelectronics
Materials for Thin Films/
Nd(C5H5)3 FW 339.5 5g
99.9%
R: 11-14/15 S: 43-7/8
Bis(ethylcyclopentadienyl)nickel
Tris(isopropylcyclopentadienyl)neodymium
51,048-3 CAS No. 31886-51-8 5g
49,601-4 CAS No. 69021-85-8 1g Ni(C5H4C2H5)2 FW 245.0
R: 20/21/22 S: 36
Nd(C5H4CH(CH3)2)3 FW 465.8 5g
99.9%
Bis(methylcyclopentadienyl)nickel
Tris(tetramethylcyclopentadienyl)neodymium 51,047-5 CAS No. 1293-95-4 1g
51,106-4 CAS No. 164528-22-7 1g Ni(C5H4CH3)2 FW 216.9 5g
97%
800.558.9196 (USA)
C27H39Nd FW 507.8
99.9% Volatile OMCVD precursor for the controlled growth of
R: 11-14 S: 16 nickel nanoparticles on silicon substrates. Possible uses for
metallic nickel nanoparticles embedded on silicon include
the manufacture of high-density storage media 9. Nickel
Nickel oxide thin films are generated via OMCVD in the presence
of O2 or H2O2.
Allyl(cyclopentadienyl)nickel solid
bp. . . . . . . . . . . . . . . . . . . . . . . 85-90 C/1 mm Hg (lit.)
52,427-1 CAS No. 12107-46-9 1g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34-36 C (lit.)
C8H7Ni FW 161.8 Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 F Ordering/Pricing: www.sigma-aldrich.com
97% References
liquid Kumagai, H. et al., J. Mater. Sci. Lett. 15, 1081 (1996)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.31 g/mL (lit.) R: 20/21/22 S: 16-33-36
R: 17-20/21/22 CH
3
Ni
Ni CH
3
Bis(pentamethylcyclopentadienyl)nickel
49,360-0 CAS No. 74507-63-4 1g
Ni(C5(CH3)5)2 FW 329.1 5g
R: 20/21/22 S: 36
316
CVD & ALD Precursors
Metal-Organic Precursors: Nickel
Bis(tetramethylcyclopentadienyl)nickel(II) Phosphorus
56,240-8 CAS No. 79019-60-6 1g Tri-tert-butylphosphine
C18H26Ni FW 301.1 5g
mp . . . . . . . . . . . . . . . . . . . . . 107-112 C 57,095-8 CAS No. 13716-12-6 1g
R: 20/21/22 S: 36 [(CH3)3C]3P FW 202.3 5g
solid 10 g
Bis(triphenylphosphine)nickel(II) dichloride 98%
bp. . . . . . . . . . . . . . . . . . . . . . >102-103 C/>13 mm Hg
52,962-1 (Nickel(II)-bis(triphenylphosphine) 10 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >30-35 C
dichloride) R: 17-34 S: 16-26-27-36/37/39-43-45
CAS No. 14264-16-5 C(CH )
33
[(C6H5)3P]2NiCl2 FW 654.2
www.sigma-aldrich.com/safc
P
(CH ) C C(CH )
‡99.99% 33 33
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 C (dec.)
R: 20/21/22 S: 36/37
CH
3
Microelectronics
Materials for Thin Films/
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Osmium 39,329-0 97% 5 mL
Precipitate is unavoidable and should not 25 mL
Bis(pentamethylcyclopentadienyl)osmium affect use
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.466 (lit.)
44,205-4 CAS No. 100603-32-5 250 mg bp. . . . . . . . . . . . . . . . . . . . . . . 48-50 C/12 mm Hg (lit.)
Os(C5(CH3)5)2 FW 460.7 1g Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 F
R: 36/37/38 S: 26-36 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14,355-3 Technical Grade, 85% 10 g
Dodecacarbonyltetra-m-hydridotetraosmium n20
D . . . . . . . . . . . . . . . . . . . . . 1.463 (lit.) 50 g
bp. . . . . . . . . . . . . 55-58 C/15 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 F
51,145-5 CAS No. 12375-04-1 250 mg
C12H4O12Os4 FW 1101
solid Platinum
R: 36/37/38 S: 26-36
(1,5-Cyclooctadiene)dimethylplatinum(II)
Triosmium dodecacarbonyl
40,904-9 CAS No. 12266-92-1 250 mg
24,974-2 (tri-Osmium dodecacarbonyl; Osmium 250 mg
C10H14Pt FW 329.3 1g
carbonyl) 1g mp . . . . . . . . . . . . . . . 103-105 C (lit.)
CAS No. 15696-40-9 R: 36/37/38 S: 26-36
Os(CO)12 FW 906.8 CH CH
3 3
98% Pt
Starting material for N-oxide-containing complexes of
osmium with 1-hydroxypyridine-2-thione. Hung, J-T. et al.
Organometallics 1996, 15, 5605. Key raw material for the
synthesis of [Os(CO)4(SnPh2)]6, a compound with an
unprecedented 12-membered ring of metal atoms. Leong,
W.K. et al. Organometallics 1997, 16, 1079.
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224 C (lit.)
R: 22-36/37/38 S: 22-26-36/37/39
317
CVD & ALD Precursors
Metal-Organic Precursors: Platinum
Tetrakis(triphenylphosphine)platinum Ruthenium
24,496-1 (Platinum-tetrakis(triphenylphosphine)) 250 mg Benzeneruthenium(II) chloride, dimer
CAS No. 14221-02-4 1g
Pt[(C6H5)3P]4 FW 1244 5g 34,156-8 CAS No. 37366-09-9 1g
97% C12H2Cl4Ru2 FW 490.1 5g
S: 22-24/25 R: 36/37/38 S: 26-37/39
Cl Cl
Ru Ru
Cl Cl
P Pt
Bis(cyclopentadienyl)ruthenium
Tris(cyclopentadienyl)praseodymium Bis(pentamethylcyclopentadienyl)ruthenium
Microelectronics
Materials for Thin Films/
47,517-3 CAS No. 11077-59-1 1g 44,206-2 CAS No. 84821-53-4 100 mg
Pr(C5H5)3 FW 336.2 Ru(C5(CH3)5)2 FW 371.5 500 mg
99.9% 97%
R: 11-14/15 S: 43-7/8 R: 36/37/38 S: 26-36
800.558.9196 (USA)
Tris(tetramethylcyclopentadienyl)praseodymium S: 22-24/25
CO 3
OC CO Sc
Ru
CO CO CO 3
OC Ru Ru CO
OC CO
CO CO
Tris(cyclopentadienyl)scandium
41,015-2 CAS No. 1298-54-0 1g
Samarium Sc(C5H5)3 FW 240.2
99.9%
Tris(N,N-bis(trimethylsilyl)amide]samarium(III) R: 11-14/15 S: 43-7/8
98%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93-106 C Di-tert-butyl selenide
Microelectronics
Materials for Thin Films/
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F
R: 11-14/15-34 S: 16-26-36/37/39-43-45-7/8 51,150-1 CAS No. 34172-60-6 5g
Se(C(CH3)3)2 FW 193.2
Tris(cyclopentadienyl)samarium 99.99+%, electronic grade
R: 23/24/25 S: 23-36/37/39-45
55,399-9 CAS No. 1298-55-1 5g
(C5H5)3Sm FW 345.6 Diethyl selenide
99.9%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >350 C 55,043-4 CAS No. 627-53-2 5g
R: 11-14/15 S: 43-7/8 Se(C2H5)2 FW 137.1 25 g
99.999%, 99% as chemical purity
Tris(tetramethylcyclopentadienyl)samarium liquid
bp. . . . . . . . . . . . . . . . . . . . . . . 108 C/760 mm Hg (lit.)
51,126-9 CAS No. 148607-24-3 1g Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 F
C27H39Sm FW 514.0 Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.232 g/mL (lit.)
99.9% R: 10-23/25-33-50/53 S: 16-20/21-23-28-45-60-61
R: 11-14 S: 16
Dimethyl selenide
Scandium 41572 (Methyl selenide) 1 mL
CAS No. 593-79-3 5 mL
Tris[N,N-bis(trimethylsilyl)amide]scandium(III) (CH3)2Se FW 109.0
puriss., ‡99.0% (GC)
54,775-1 CAS No. 37512-28-0 1g Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.408 g/mL
Sc(N(Si(CH3)3)2)3 FW 526.1 R: 23/25-33-50/53 S: 20/21-28-45-60-61
97%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169-174 C
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F Silicon
R: 11-14/15-34 S: 16-26-36/37/39-43-45-7/8
Chloropentamethyldisilane
49,040-7 CAS No. 1560-28-7 1g
CeSi2(CH3)5 FW 166.8 5g
97%
liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4415 (lit.)
bp. . . . . . . . . . . . . . . . . . . . 134-136 C/760 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.862 g/mL (lit.)
R: 11-14-34 S: 16-26-36/37/39-45
CH CH
3 3
CH Si Si Cl
3
CH CH
3 3
319
CVD & ALD Precursors
Metal-Organic Precursors: Silicon
1,2-Dichlorotetramethyldisilane 2,4,6,8,10,12-Hexamethylcyclohexasiloxane
41,545-6 CAS No. 4342-61-4 5 mL 51,782-8 CAS No. 6166-87-6 25 mL
(ClSi(CH3)2)2 FW 187.2 (CH3SiHO)6 FW 360.8
95% 96%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.454 (lit.) liquid
bp. . . . . . . . . . . . . . . . . . . . 148-149 C/760 mm Hg (lit.) n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.394 (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 F bp. . . . . . . . . . . . . . . . . . . . . . . . 34 C/0.1 mm Hg (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.005 g/mL (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.999 g/mL (lit.)
R: 14-34 S: 26-27-36/37/39-45
H CH
O 3
CH CH
3 3 CH Si Si H
3 CH
Cl Si Si Cl H 3
O O
CH CH Si Si H
3 3
CH O O O
3
Si Si
H CH H CH3
3
1,2-Dimethyl-1,1,2,2-tetraphenyldisilane
Microelectronics
Materials for Thin Films/
CH
3 Si 3
CH
3
Si Si CH
3
References
CH
3
Si Si CH
3
Thin Solid Films 252, 13 (1994)
Si
CH
3 CH CH
CH
3
R: 11-43 S: 16-23-45
3 3
CH CH
3 3
CH Si Si CH
3 3
CH CH
3 3
1,2-Ethanediylbis(methylsilane)
52,222-8 CAS No. 4405-22-5 5g
CH3SiH2CH2CH2SiH2CH3 FW 118.3 Octaphenylcyclotetrasilane
98%
liquid 44,481-2 CAS No. 1065-95-8 1g
800.558.9196 (USA)
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.422 (lit.) (Si(C6H5)2)4 FW 729.2
bp. . . . . . . . . . . . . . . . . . . . . . 95-96 C/760 mm Hg (lit.) 97%
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.725 g/mL (lit.)
R: 11 S: 16 2,4,6,8,10-Pentamethylcyclopentasiloxane
H H
CH Si CH CH Si CH
3
H
2 2
H
3 51,780-1 CAS No. 6166-86-5 25 mL
(CH3SiHO)5 FW 300.6
96%
liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3908 (lit.)
1,2-Ethanediylbissilane bp. . . . . . . . . . . . . . . . . . . . . . . . . 54 C/10 mm Hg (lit.)
Ordering/Pricing: www.sigma-aldrich.com
R: 5 S: 16-36
Hexachlorodisilane See: Trichlorosilanes Page 230
320
CVD & ALD Precursors
Metal-Organic Precursors: Silicon
Pentamethyldisilane Tetrakis(dimethylamino)silane
55,764-1 CAS No. 812-15-7 1 mL 47,507-6 CAS No. 1624-01-7 5g
(CH3)3SiSi(CH3)2H FW 104.3 5 mL Si(N(CH3)2)4 FW 204.4 10 g
97% 99%
bp. . . . . . . . . . . . . . . . . . . . . . . . . 98-99 C/760 mm Hg R: 10-14-20/21/22-34 S: 26-36/37/39-45
nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.4240
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.722 g/mL
R: 11 S: 16-33-7/9
CH CH
3 3
CH Si Si H
3
CH CH
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3 3
1,1,2,2-Tetrachloro-1,2-dimethyldisilane
36,896-2 CAS No. 4518-98-3 5g
Cl4SiSi(CH3)2 FW 228.1 25 g
96%
Vapor pressure. . . . . . . . . . . . . . . . . . . . 0.88 psi ( 20 C)
Vapor pressure. . . . . . . . . . . . . . . . . . . . 1.97 psi ( 55 C)
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.469 (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.269 g/mL (lit.)
R: 10-14-34 S: 26-27-28-36/37/39-45
Cl Cl
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
CH Si Si CH
3 3
Microelectronics
Materials for Thin Films/
Cl Cl
1
H-NMR spectrum of Aldrich product 47,507-6, lot 91229EA
Tetraethylsilane
51,087-4 CAS No. 631-36-7 5 mL 2,4,6,8-Tetramethylcyclotetrasiloxane
Si(C2H5)4 FW 144.3 25 mL
99% 51,299-0 (TMCTS) 25 mL
liquid CAS No. 2370-88-9
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4263 (lit.)
(HSiCH3O)4 FW 240.5
bp. . . . . . . . . . . . . . . . . . . . 153-154 C/760 mm Hg (lit.) 99.5+%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -82.5 C (lit.) Precursor for gate dielectrics in thin-film transistors (TFT),
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 F and is a component of photochemically formed SiOx
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.761 g/mL (lit.) monolayers on TiO.
R: 10-36/37/38 S: 26-36
CH CH
2 3 liquid
CH CH
3 2
Si CH CH
2 3 n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3871 (lit.)
CH CH
2 3
bp. . . . . . . . . . . . . . . . . . . . . . . 134 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -69 C (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.986 g/mL (lit.)
References
1,1,2,2-Tetraisopropyldisilane 1. Tada, H.; Tanaka, M., Thin Solid Films 281, 404 (1996)
2. Wang,A. W. et al., Mater. Res. Soc. Symp. Proc. 424, 281
43,946-0 CAS No. 19753-69-6 1g (1997)
Si(CH(CH3)2)4 FW 230.5 R: 10-36 S: 16-26-36
CH
97% H O
3
Si
H
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.477 (lit.) Si
CH
O
CH 3
bp. . . . . . . . . . . . . . . . . . . . . . . . 124 C/21 mm Hg (lit.) 3 O Si
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 F H
Si O H
CH
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.815 g/mL (lit.) 3
CH CH
3 3
CH CH CHCH
3 3
CH CH Si Si CHCH
3 3
CH H H CH
3 3
321
CVD & ALD Precursors
Metal-Organic Precursors: Silicon
1,1,2,2-Tetramethyldisilane Trimethyl(vinyl)silane
44,512-6 CAS No. 814-98-2 1g 49,430-5 (Ethenyltrimethylsilane; 25 mL
(CH3)2SiHSiH(CH3)2 FW 118.3 Vinyltrimethylsilane;
98% (Trimethylsilyl)ethylene)
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.428 (lit.) CAS No. 754-05-2
bp. . . . . . . . . . . . . . . . . . . . . . 86-87 C/760 mm Hg (lit.)
(CH3)3SiCHCH2 FW 100.2
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -15 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.715 g/mL (lit.)
99.5+%
R: 11 S: 16-29-33 liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.392 (lit.)
CH CH
3 3 bp. . . . . . . . . . . . . . . . . . . . . . . . 55 C/760 mm Hg (lit.)
H Si Si H
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <-30 F
CH CH
3 3 Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.684 g/mL (lit.)
R: 11-22-36/37/38 S: 16-26-33-36
CH
3
CH Si CH CH
3 2
Tetramethylsilane
Microelectronics
Materials for Thin Films/
47,538-6 CAS No. 205503-61-3 5 mL films. Also yields tantalum oxide (Ta2O5) thin films when
HSi(HNC(CH3)3)3 FW 245.5 10 mL O2, H2O, NO or H2O2 is present during the deposition
99.99% process., Ta2O5 thins films show promise as gate dielectric
liquid materials in the manufacture of integrated circuits.
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.827 g/mL solid
n20 mp . . . . . . . . . . . . . . . . . . . . . . . . . . 100 C (dec.) (lit.)
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4289 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . 76-80 C/0.3 mm Hg (lit.) References
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 F 1. Son, K. -A. et. al., Appl. Phys. Lett. 72, 1187 (1998)
R: 10-34 S: 16-26-36/37/39-45 2. Son, K. -A. et. al., J. Vac. Sci. Technol., A 16, 1670 (1998)
CH CH
CH H CH 3 3
3 3 CH N CH
3 3
CH C NH Si NH C CH N N
3 3
CH Ta CH
CH NH CH 3 3
3 3
N N CH
800.558.9196 (USA)
CH C CH CH
3 3 3 3
CH CH CH
3 3 3
2,4,6-Trimethylcyclotrisiloxane Tris(diethylamino)(tert-butylimino)tantalum
Tris(diethylamino)(ethylimino)tantalum Thallium
51,783-6 CAS No. 67313-80-8 5 mL Thallium cyclopentadienide
C2H5NTa(N(C2H5)2)3 FW 440.4
liquid 15,534-9 CAS No. 34822-90-7 1g
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.51 (lit.) C5H5Tl FW 269.5 10 g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F 97% 50 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.31 g/mL (lit.) mp . . . . . . . . . . . . . . . . . . . . 300 C (lit.)
R: 11-34 S: 16-26-27-36/37/39 R: 26/28-33-51/53 S: 13-28-45-61
CH CH CH CH
3 2 2 3
CH CH N
3 2 Tl
N Ta NCH CH
2 3
CH CH N
3 2
www.sigma-aldrich.com/safc
CH CH CH CH
3 2 2 3
Thulium
Tellurium Tris(cyclopentadienyl)thulium
R: 10-25 S: 45
Microelectronics
Materials for Thin Films/
Terbium
Tris[N,N-bis(trimethylsilyl)amide]terbium(III) Tin
54,783-2 CAS No. 109433-86-5 1g
Tb(N(Si(CH3)3)2)3 FW 640.1
Allenyltributyltin
98% 49,985-4 CAS No. 53915-69-8 1g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162-165 C
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F
C15H30Sn FW 329.1 5g
R: 11-14/15-34 S: 16-26-36/37/39-43-45-7/8 Technical Grade, 80%
liquid
Tris(cyclopentadienyl)terbium n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 265 C/760 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >230 F
55,400-6 CAS No. 1272-25-9 5g
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.107 g/mL (lit.)
(C5H5)3Tb FW 354.2 R: 21-25-36/38-48/23/25-50/53 S: 35-36/37/39-45-60-61
99.9%
mp . . . . . . . . . . . . . . . . . . . . . . . 235 C (decomposition)
R: 11-14/15 S: 43-7/8
Allyltributylstannane
27,141-1 CAS No. 24850-33-7 5g
Tris(isopropylcyclopentadienyl)terbium CH2:CHCH2Sn(CH2CH2CH2CH3)3 25 g
49,600-6 CAS No. 312696-25-6 1g FW 331.1 100 g
Tb(C5H4CH(CH3)2)3 FW 480.4 5g 97%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.486 (lit.)
99.9% bp. . . . . . . . . . . . . . . . . . . . . . 88-92 C/0.2 mm Hg (lit.)
S: 16-33
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >230 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.068 g/mL (lit.)
Tris(tetramethylcyclopentadienyl)terbium R: 21-25-36/38-48/23/25-50/53 S: 35-36/37/39-45-60-61
CH CH CH CH
52,506-5 CAS No. 148607-25-4 1g 3 2 2 2
CH CH CH CH Sn CH CH CH
C27H39Tb FW 522.5 3 2 2 2 2 2
CH CH CH CH
99.9% 3 2 2 2
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 C (lit.)
R: 11-14 S: 16
323
CVD & ALD Precursors
Metal-Organic Precursors: Tin
Allyltriphenylstannane Ethynyltributylstannane
33,236-4 (Allyltriphenyltin; 2-Propenyl- 10 g 27,506-9 (Tributylstannylacetylene) 1g
triphenylstannane) 50 g CAS No. 994-89-8 5g
CAS No. 76-63-1 HCCSn(CH2CH2CH2CH3)3 FW 315.1
CH2:CHCH2Sn(C6H5)3 FW 391.1 95%
97% n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.476 (lit.)
Reagent employed in the preparation of allyllithium. J. bp. . . . . . . . . . . . . . . . . . . . . . . . 70 C/0.2 mm Hg (lit.)
Am. Chem. Soc. 1981, 103, 1969. Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 F
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74-76 C (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.089 g/mL (lit.)
R: 23/24/25-50/53 S: 26-27-28-45-60-61 R: 21-25-36/38-48/23/25-50/53 S: 35-36/37/39-45-60-61
Bis[bis(trimethylsilyl)amino]tin(II) Hexabutyldistannane
Microelectronics
Materials for Thin Films/
C20H28Sn FW 387.1 99%
97% Packaged in prescored ampules
liquid bp. . . . . . . . . . . . . . . . . . . . . . . 182 C/756 mm Hg (lit.)
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.562 (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23-24 C (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 270 C/760 mm Hg (lit.) Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 F
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >230 F R: 26/27/28-50/53 S: 26-27-28-45-60-61
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.17 g/mL (lit.) CH CH
3 3
R: 23/24/25-36/37/38-50/53 S: 26-27-45-60-61 CH
3
Sn Sn CH
3
CH CH
3 3
(Dimethylamino)trimethyltin
42,928-7 (Pentamethylstannanamine) 1g
CAS No. 993-50-0 5g Hexaphenylditin
C5H15NSn FW 207.9
800.558.9196 (USA)
Technical Grade 59,532-2 CAS No. 1064-10-4 5g
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.463 (lit.) C36H30Sn FW 581.3 25 g
bp. . . . . . . . . . . . . . . . . . . . . . . 126 C/760 mm Hg (lit.) solid
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.274 g/mL (lit.) Tetraallylstannane
R: 26/27/28-50/53 S: 26-27-28-45-60-61
27,144-6 (Tetraallyltin) 1g
Dimethylbis(pentafluorophenyl)tin CAS No. 7393-43-3 5g
(H2C:CHCH2)4Sn FW 283.0 25 g
56,613-6 (Bis(pentafluorophenyl)dimethyltin; 1g
97% Ordering/Pricing: www.sigma-aldrich.com
Dimethylbis(pentafluorophenyl)stannane; 5g n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.539 (lit.)
Bis(pentafluorophenyl)dimethylstannane) bp. . . . . . . . . . . . . . . . . . . . . . 69-70 C/1.5 mm Hg (lit.)
CAS No. 801-79-6 Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167 F
(C6F5)2Sn(CH3)2 FW 482.9 Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.179 g/mL (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 259-260 C/760 mm Hg S: 23-24/25
nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.4910
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >230 F Tetrabutyltin
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.827 g/mL
References T600-8 (Tin tetrabutyl) 5g
Angew. Chem. Int. Ed. Engl. 39, 1312 (2000)
CAS No. 1461-25-2 100 g
R: 20/21/22-36/37/38 S: 26-36
(CH3CH2CH2CH2)4Sn FW 347.2 500 g
93%, Technical Grade
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.474 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . . . 127-145 C/10 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-97 (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.057 g/mL (lit.)
R: 21-25-36/38-48/23/25-50/53 S: 35-36/37/39-45-60-61
324
CVD & ALD Precursors
Metal-Organic Precursors: Tin
Tetraethyltin Tributyl(1-ethoxyvinyl)tin
22,922-9 CAS No. 597-64-8 1g 27,512-3 CAS No. 97674-02-7 1g
Sn(C2H5)4 FW 235.0 5g C16H34OSn FW 361.2 5g
97% 25 g 97% 25 g
n20
D . . . . . . . . . . . . . . . . . . . . . 1.473 (lit.) Reagent employed in palladium-catalyzed
bp. . . . . . . . . . . . . . . . . . . . . . . 181 C/760 mm Hg (lit.)
coupling reactions with sulfoxides,1 a-haloethers,2 and
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -112 C (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 F
chlorocyclobutenones.3 Also used to convert acid
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.187 g/mL (lit.) chlorides to a-oxygenated enones.4 (1) Tetrahedron Lett.
R: 26/27/28-50/53 S: 26-27-28-45-60-61 1993, 34, 2429. (2) ibid. 1992, 33, 4885. (3) J. Am. Chem.
Soc. 1992, 114, 1412. (4) Aldrichimica Acta 1984, 17, 75.
Tetrakis(diethylamino)tin n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.476 (lit.)
www.sigma-aldrich.com/safc
liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.441 (lit.)
Microelectronics
Materials for Thin Films/
Tributyl(vinyl)stannane
27,143-8 (Vinyltributylstannane; 1g
Microelectronics
Materials for Thin Films/
HSn(C6H11)3 FW 369.2 1g R: 14-34 S: 16-26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
97%
bp. . . . . . . . . . . . . . . . . . . . . . . . . .129 C/0.05 mm Hg
46,986-6 99.999% 5g
nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5409 Precursor to titanium nitride (TiN) thin films 25 g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221 F by organometallic chemical vapor
R: 21-25-36/38-48/23/25-50/53 S: 35-36/37/39-45-60-61 deposition (OMCVD). Thin Solid Films 1994, 85, 2471
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.537 (lit.)
Trimethyl(phenylethynyl)tin bp. . . . . . . . . . . . . . . . . . . . . . . .112 C/0.1 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -18 F
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
42,995-3 CAS No. 1199-95-7 1g
40,739-9 Technical Grade 1g
C11H14Sn FW 264.9 5g
5g
97%
R: 26/27/28-50/53 S: 26-27-28-45-60-61
800.558.9196 (USA)
Tetrakis(dimethylamino)titanium
Trimethyl(phenyl)tin 46,985-8 CAS No. 3275-24-9 5g
Ti(N(CH3)2)4 FW 224.2 25 g
36,633-1 CAS No. 934-56-5 1g
99.999%
C9H14Sn FW 240.9 5g
Packaged in ampules
98%
n20 Precursor to titanium nitride (TiN) thin films by
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5357 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . . . 88 C/16 mm Hg (lit.) organometallic chemical vapor deposition (OMCVD).
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -51 C (lit.) Chem. Mater. 1996, 8, 2712.
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169 F bp. . . . . . . . . . . . . . . . . . . . . . . . 50 C/0.5 mm Hg (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.327 g/mL (lit.) Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -22 F Ordering/Pricing: www.sigma-aldrich.com
R: 26/27/28-50/53 S: 26-27-28-45-60-61 Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.947 g/mL (lit.)
R: 11-14-34 S: 16-26-36/37/39-45
Triphenyltin hydride CH
3
N
CH
3
CH CH
3 3
N Ti N
24,477-5 CAS No. 892-20-6 5g CH
3
CH
3
N
C18H16Sn FW 351.0 25 g CH
3
CH
3
n20
D . . . . . . . . . . . . . . . . . . . . . 1.632 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . 163-165 C/0.3 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 C (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >230 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.374 g/mL (lit.)
R: 23/24/25-50/53 S: 26-27-28-45-60-61
Titanium
Bis(tert-butylcyclopentadienyl)titanium dichloride
48,362-1 CAS No. 79269-71-9 1g
C18H20Cl2Ti FW 355.1 5g
97%
326
CVD & ALD Precursors
Metal-Organic Precursors: Titanium
H W H
www.sigma-aldrich.com/safc
Bis(isopropylcyclopentadienyl)tungsten dihydride
51,255-9 CAS No. 64561-25-7 2.5 g
(C5H4CH(CH3)2)2WH2 FW 394.2
Packaged in ampules
solid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 230 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 155 C (dec.) (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 F
R: 11 S: 16
CH
3
CHCH
3
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
H W H
CHCH
1 3
Microelectronics
Materials for Thin Films/
Tetrakis(ethylmethylamino)titanium
47,353-7 CAS No. 308103-54-0 5g Cyclopentadienyltungsten tricarbonyl, dimer
Ti(NCH3C2H5)4 FW 280.3 25 g
30,233-3 (bis(cyclopentadienyl)ditungsten 1g
electronic grade, 99.99+%
hexacarbonyl) 5g
Precursor to titanium nitride (TiN) thin films by
CAS No. 12566-66-4
organometallic chemical vapor deposition (OMCVD).
C16H2O6W2 FW 657.9
Chem. Mater. 1997, 9, 76. mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258 C (D) (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . . 80 C/0.1 mm Hg (lit.)
R: 20/21/22 S: 36
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.923 g/mL (lit.)
R: 11-14-34 S: 16-26-36/37/39-45 W(CO)
3
CH CH CH W(CO)
3 2 3 3
N
CH CH CH
3 2 3
N Ti N
CH CH CH
3 2 N 3
CH CH CH
3 2 3
Triamminetungsten tricarbonyl
54,110-9 CAS No. 58204-42-5 1g
C3H9N3O3W FW 319.0 5g
Vanadium
Microelectronics
Materials for Thin Films/
R: 11-23/24/25-36/37/38 S: 16-26-28-36/37/39-45
W
OC CO
CO
V
Tricarbonyl(mesitylene)tungsten
32,760-3 CAS No. 12129-69-0 500 mg
C6H3(CH3)3W(CO)3 FW 385.0 2.5 g Bis(ethylcyclopentadienyl)vanadium
98%
R: 20/21/22-36/37/38 S: 26-37/39 51,061-0 CAS No. 55940-04-0 1g
C14H12V FW 231.2 5g
Tungsten hexacarbonyl liquid
800.558.9196 (USA)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.12 g/mL (lit.)
CAS No. 14040-11-0
W(CO)6 FW 351.9 Bis(indenyl)vanadium
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.65 g/mL (lit.) 56,676-4 CAS No. 101834-69-9 1g
R: 11-23 S: 16-36/37/39-45 (C9H7)2V FW 281.2 5g
OC CO mp . . . . . . . . . . . . . . . . . . . . .67 C (Dec.)
OC W CO
OC CO
Bis(pentamethylcyclopentadienyl)vanadium (II)
57,437-6 CAS No. 74507-60-1 1g
Ordering/Pricing: www.sigma-aldrich.com
. . . . . . . . . . . . . . . . . . . . . . . . . . . . C20H30V FW 321.4 5g
47,295-6 99.9+%, Purified by sublimation 5g solid
25 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38 S: 26-36
24,143-1 97% 10 g
Vapor density. . . . . . . . . . . . . . 12.1 (vs air) 50 g
Vapor pressure. . . . . . . . 1.2 mm Hg ( 67 C) Bromobis(indenyl)vanadium (III)
Mo. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <1%
57,432-5 CAS No. 196815-75-5 1g
C18H14BrV FW 361.1 5g
97%
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 C (dec.)
Chlorobis(indenyl)vanadium (III)
57,431-7 CAS No. 480445-37-2 1g
C18H14ClV FW 316.7 5g
mp . . . . . . . . . . . . . . . . . . . . . . . >300 C
328
CVD & ALD Precursors
Metal-Organic Precursors: Vanadium
Iodobis(indenyl)vandium(III) Diethylzinc
57,433-3 CAS No. 108150-19-2 1g (Zincdiethyl)
C18H14IV FW 408.1 5g CAS No. 557-20-0
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300 C 25,678-1 Diethylzinc 100 g
R: 23/24/25-36/37/38 S: 26-36/37/39-45 (C2H5)2Zn FW 123.5
Packaged under nitrogen in Sure/Pac metal cylinders
Tetrakis(neopentyl)vandadium n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.498 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 117 C/760 mm Hg (lit.)
56,704-3 CAS No. 480444-86-8 mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -28 C (lit.)
((CH3)3CCH2)4C FW 335.5 Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.205 g/mL (lit.)
www.sigma-aldrich.com/safc
R: 14-17-34-50/53 S: 16-43-45-60-61
Ytterbium
Diethylzinc solution
Tris[N,N-bis(trimethylsilyl)amide]ytterbium(III) (C2H5)2Zn FW 123.5
Packaged under nitrogen in Sure/Seal bottles
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
54,787-5 CAS No. 41836-28-6 1g 40,602-3 1.0 M in heptane 100 mL
Y(N(Si(CH3)2)3 FW 570.1 bp. . . . . . . . . . . . 98 C/760 mm Hg (lit.) 800 mL
98% Fp. . . . . . . . . . . . . . . . . . . . . . . 12 F
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161-166 C Density. . . . . . . . . . . . . . . . . . . . . . . . . . 0.74 g/mL (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 F R: 11-14-20/21/22-34 S: 16-26-36/37/39-45
R: 11-14/15-34 S: 16-26-36/37/39-43-45-7/8 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
29,611-2 1.0 M in hexanes 100 mL
Tris(cyclopentadienyl)ytterbium Fp. . . . . . . . . . . . . . . . . . . . . . -10 F 800 mL
Density. . . . . . . . . . . . . 0.726 g/mL (lit.)
49,243-4 CAS No. 1295-20-1 1g R: 11-14/15-34-48/20-50/53-62-65-67 S: 9-16-29-33-36/37-43-
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Bis(cyclopentadienyl)dimethylzirconium Tetrakis(diethylamino)zirconium
48,365-6 CAS No. 12636-72-5 1g 45,315-3 CAS No. 13801-49-5 5 mL
(C5H5)2Zn(CH3)2 FW 251.5 5g Zr(N(C2H5)2)4 FW 379.7 25 mL
97% electronic grade, 99.99%
Packaged in ampules n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.51 (lit.)
solid bp. . . . . . . . . . . . . . . . . . . . . . . 128 C/0.05 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 170 C (dec.) (lit.) Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.026 g/mL (lit.)
CH R: 11-14-36/37/38 S: 16-26-36
3
Zr
CH CH CH CH
3 2 2 3
CH N
3 CH CH CH CH
3 2 2 3
N Zr N
CH CH CH CH
3 2 N 2 3
CH CH CH CH
3 2 2 3
Bis(cyclopentadienyl)zirconium, dihydride
Microelectronics
Materials for Thin Films/
Bis(indenyl)dimethylzirconium
48,366-4 CAS No. 49596-04-5 1g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C20H16Zr FW 347.6 5g 57,921-1 99.99%, electronic grade 1g
solid 5g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .106 C (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
44,566-5 crystals 5g
mp . . . . . . . . . . . . . . . . . . . . 57-60 C (lit.)
CH Zr CH
3 3
Tetrakis(2,2-dimethylpropyl)zirconium
53,669-5 CAS No. 38010-72-9 5g
C20H44Zr FW 375.8
solid
800.558.9196 (USA)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 111-112 C (lit.)
S: 22-24/25
Dimethylbis(pentamethylcyclopentadienyl)zirconium
51,079-3 CAS No. 67108-80-9 5g Tetrakis(ethylmethylamino)zirconium
C22H36Zr FW 391.7
55,313-1 CAS No. 175923-04-3 5g
rac-Ethylenebis(4,5,6-tetrahydro-1-indenyl)dimethylzirco- Zr(NCH3C2H5)4 FW 323.6 25 g
99+% as chemical purity
nium(IV) liquid
bp. . . . . . . . . . . . . . . . . . . . . . . . 81 C/0.1 mm Hg (lit.)
53,211-8 CAS No. 112243-80-8 100 mg Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 F
Ordering/Pricing: www.sigma-aldrich.com
C22H32Zr FW 387.7 500 mg Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.049 g/mL (lit.)
solid R: 11-14-34 S: 16-26-36/37/39-45
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 150-155 C (lit.) CH CH CH
3 2 3
R: 36/37/38 S: 26-36 CH
N
CH CH
3 2 3
N Zr N
CH CH CH
Tetrabenzylzirconium(IV) 3 2 N 3
CH CH CH
3 2 3
59,245-5 CAS No. 24356-01-2 1g
C28H28Zr FW 455.7 5g
330
CVD & ALD Precursors
Polymeric Precursors for SiC Films & Fibers
6.8 g of 50 · 50 mm
Poly(carbodihydridosilane) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,657-4 foil, thickness 0.5 mm, 99.999% 3.4 g
48,106-8 CAS No. 74056-94-3 1g 13.6 g of 100 · 100 mm 13.6 g
(CH4Si)n 5g 3.4 g of 50 · 50 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 10 S: 16
32,685-2 foil, thickness 0.25 mm, 99.999% 1.7 g
1.7 g of 50 · 50 mm 6.8 g
Polycarbomethylsilane 6.8 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Poly[(methylsilylene)methylene]; Polycarbosilane) 26,658-2 foil, thickness 1.0 mm, 99.99+% 6.8 g
CAS No. 62306-27-8 27.2 g of 100 · 100 mm 27.2 g
(C2H6Si)n 6.8 g of 50 · 50 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Polymeric precursor of SiC ceramics.
32,686-0 foil, thickness 0.13 mm, 99.99+% 900 mg
Ceramic coating from polymer melt or solution. 3.6 g of 100 · 100 mm 3.6 g
900 mg of 50 · 50 mm
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
CH
3 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Si CH
2 32,692-5 ingot, 99.997% 100 g
Microelectronics
Materials for Thin Films/
H n 500 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
51,860-3 needles, length ~4 mm, 99.9% 1 kg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 32,694-1 pellets, 3-8 mesh, 99.999+% 5g
52,258-9 Average Mw ~800, electronic grade 25 g 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . ~79-84 C (lit.)
33,878-8 pellets, 3-8 mesh, 99.99+% 50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
52,259-7 Average Mw ~1,400, electronic grade 25 g 20,258-4 powder, -200 mesh, 99.95+% 10 g
R: 15-17 S: 43-7/8 50 g
solid . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300 C (lit.) 26,656-6 rod, diam. 12.7 mm, 99.999% 25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
125 g of 5 of 75 mm 125 g
52,260-0 Average Mw ~2,000, electronic grade 25 g
25 g of 75 mm
solid . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300 C (lit.) 32,691-7 rod, diam. 6.35 mm, 99.999% 4.3 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 g/mL (lit.) 17.2 g of 200 mm 17.2 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3 g of 50 mm
52,261-9 Average Mw ~3,500, electronic grade 25 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
solid 20,257-6 rod, diam. 3.0 mm, length 100 mm, 10 g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300 C (lit.) 99.999% 50 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 g/mL (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CVD of Nonmetals See: Books Page 496 26,652-3 shot, 5-15 mm, 99.9% 250 g
1 kg
The Chemistry of Metal CVD See: Books Page 498 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,655-8 wire, diam. 1.0 mm, 99.999% 10.5 g
10.5 g of 5 m 52.5 g
52.5 g of 25 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Purity Metals/Elements 32,688-7 wire, diam. 0.58 mm, 99.99+% 7g
35 g of 50 m 35 g
7 g of 10 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Metals 32,689-5 wire, diam. 0.25 mm, 99.99+% 2.6 g
13 g of 100 m 13 g
Aluminum 2.6 g of 20 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 7429-90-5 32,690-9 wire, diam. 0.127 mm, 99.99+% 320 mg
Al FW 26.98 1.6 g of 50 m 1.6 g
320 mg of 10 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
42,480-3 discs, 0.5-1.7 mm, 99.99+% 5g 32,687-9 wire, diam. 1.5 mm, 99.99% 4.8 g
25 g 24 g of 5 m 24 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.8 g of 1 m
43,371-3 evaporation slug, diam. 6.3 mm · 5.3 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
length 1.2 cm, 99.999% 26.6 g 46,035-4 wire, diam. 1.0 mm, 99.9% 21 g
105 g of 50 m 105 g
21 g of 10 m
331
High Purity Metals/Elements
Metals
Microelectronics
Materials for Thin Films/
CAS No. 7440-43-9
CAS No. 7440-38-2
Cd FW 112.4
As FW 74.92 R: 45-20/21/22 S: 53-36-45
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 817 C (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . 5.727 g/mL 25 C (lit.) 26,544-6 foil, thickness 1.5 mm, 99.9998% 8g
R: 23/25 S: 20/21-28-45 32 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20,265-7 pieces, 99.9998% 5g 34,857-0 foil, thickness 0.25 mm, 99.99+% 5.5 g
OSHA-regulated carcinogen see 29 CFR 25 g Density. . . . . . . . . . . . . . . . 8.64 g/mL (lit.) 22 g
Part 1910.1018 22 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 g of 50 · 50 mm
26,796-1 powder, 99.999+% 10 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 g 26,541-1 foil, thickness 0.5 mm, 99.99+% 11 g
800.558.9196 (USA)
11 g of 50 · 50 mm 44 g
Barium 44 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 7440-39-3 34,858-9 foil, thickness 0.1 mm, 99.99+% 2.2 g
Density. . . . . . . . . . . . . . . . 8.64 g/mL (lit.) 8.8 g
Ba FW 137.3
2.2 g of 50 · 50 mm
Critical for the synthesis of pure Ba21M2O5Hx (M = Ge, SI, Ga, 8.8 g of 100 · 100 mm
In, Tl) suboxide Zintl phases.3 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Packaged under argon in ampules 46,626-3 pellets, 6.35-6.35 mm, 99.999% 15.7 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.6 g/mL (lit.) 50.2 g
R: 11-14-31-36/37/38 S: 16-26-36/37-43 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,545-4 rod, diam. 4.0 mm, 99.999% 10 g Ordering/Pricing: www.sigma-aldrich.com
47,471-1 Purified by distillation, dendritic 5g 10 g of 100 mm
pieces, 99.99% 25 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mp . . . . . . . . . . . . . . . . . . . . 725 C (lit.) 34,859-7 rod, diam. 2.0 mm, 99.999% 2.5 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
44,188-0 Purified by distillation, dendritic 5g 20,288-6 shot, 3 mm, 99.999% 50 g
pieces, 99.9% 25 g mp . . . . . . . . . . . . . . . . . . . 320.9 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 8.642 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Bismuth 26,538-1 stick, thickness ~12.7 mm, 99.98% 115 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 7440-69-9 38,538-7 stick, thickness 10 mm, 99.999+% 35 g
Bi FW 209.0 Density. . . . . . . . . . . . . . . 8.65 g/mL (lit.) 140 g
140 g of 200 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 g of 50 mm
20,283-5 pieces, elongated, 99.999% 50 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Vapor pressure. . . . . . .<0.1 mm Hg ( 20 C) 250 g 26,540-3 wire, diam. 1.0 mm, 99.9998% 6.8 g
mp . . . . . . . . . . . . . . . . . . . 271 C (lit.) Density. . . . . . . . . . . . . . . . 8.64 g/mL (lit.) 34 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 9.8 g/mL (lit.) 34 g of 500 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8 g of 100 cm
55,613-0 pieces, 1-12 mm, 99.999% 250 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34,860-0 wire, diam. 1.0 mm, 99.999% 6.8 g
Density. . . . . . . . . . . . . . . . 8.64 g/mL (lit.) 34 g
34 g of 500 cm
6.8 g of 100 cm
332
High Purity Metals/Elements
Metals
23,924-0 CAS No. 7440-46-2 1g give clean and atomically flat surfaces. Neuhasen, J. et al.
Cs FW 132.9 5g Chem. Mater. 1998, 10, 3870.
ingot, 99.95+% Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 8.9 g/mL (lit.)
Packaged in ampules . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Vapor pressure. . . . . . . . . . . . . . . . . . .1 mm Hg ( 279 C)
26,670-1 wire, diam. 1.0 mm, 99.995% 1.4 g
bp. . . . . . . . . . . . . . . . . . . . . . . 705 C/760 mm Hg (lit.)
1.4 g of 20 cm
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.5 C (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.873 g/mL (lit.) 28,117-4 wire, diam. 0.5 mm, 99.995% 340 mg
R: 11-14/15-34 S: 8-16-26-36/37/39-43-45 1.7 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chromium 52,345-3 wire, diam. 0.25 mm, 99.995% 435 mg
bp. . . . . . . . . . 2900 C/760 mm Hg (lit.) 2.2 g
CAS No. 7440-47-3 Density. . . . . . . . . . . . . . . 8.9 g/mL (lit.)
Cr FW 52.00 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38-43 S: 26-28-36 52,344-5 wire, diam. 0.1 mm, 99.995% 70 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . bp. . . . . . . . . . 2870 C/760 mm Hg (lit.) 350 mg
37,484-9 chips, thickness ~1 mm, 99.995% 50 g Density. . . . . . . . . . . . . . . 8.9 g/mL (lit.)
Density. . . . . . . . . . . . . . . 7.14 g/mL (lit.) 250 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,705-7 wire, diam. 2.0 mm, 99.9+% 1.4 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
22,956-3 chunks, 99.99+% 20 g
Density. . . . . . . . . . . . . . . . 7.2 g/mL (lit.) 100 g
35,703-0 wire, diam. 0.5 mm, 99.9+% 900 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,666-3 rod, diam. 5.0 mm, 99.998% 3.4 g
26,628-0 crystallite, 99.996% 10 g 25.5 g of 150 mm
Density. . . . . . . . . . . . . . . . 7.14 g/mL (lit.)
8.5 g
3.4 g of 20 mm 25.5 g
Particle size. . . . . . . . . . . . . . . . . . . . . . . . . . . 1-15 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5 g of 50 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
54,513-9 pieces, 99.99% 10 g 39,881-0 rod, diam. 5.0 mm, 99.95% 8.5 g
Density. . . . . . . . . . . . . . . . . 7.2 g/mL (lit.) 50 g
Density. . . . . . . . . . . . . . . 8.92 g/mL (lit.) 25.5 g
25.5 g of 150 mm
Cobalt 8.5 g of 50 mm
36,941-1 foil, thickness 2.0 mm, 99.999% 11 g 36,532-7 rod, diam. 11 mm, 99.9999% 21.5 g
44 g Density. . . . . . . . . . . . . . . 8.94 g/mL (lit.) 172 g
176 g 172 g of 200 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.5 g of 25 mm
26,674-4 foil, thickness 1.0 mm, 99.999% 11 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11 g of 25 · 50 mm 88 g 26,485-7 rod, diam. 19 mm, 99.9998% 56 g
88 g of 100 · 100 mm 225 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,673-6 foil, thickness 0.5 mm, 99.999% 11 g 32,643-7 rod, diam. 3.1 mm, 99.999% 10 g
11 g of 50 · 50 mm 44 g Density. . . . . . . . . . . . . . . . 8.94 g/mL (lit.)
44 g of 100 · 100 mm 10 g of 1 · 150 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,639-9 foil, thickness 0.25 mm, 99.999% 5.5 g 26,610-8 rod, diam. 6.35 mm, 99.998% 28 g
Density. . . . . . . . . . . . . . . . 8.94 g/mL (lit.) 22 g Density. . . . . . . . . . . . . . . . 8.94 g/mL (lit.)
22 g of 100 · 100 mm 28 g of 100 mm
5.5 g of 50 · 50 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 25,417-7 shot, 2-4 mm, 99.9995% 25 g
26,672-8 foil, thickness 0.1 mm, 99.999% 2.2 g Density. . . . . . . . . . . . . . . 8.94 g/mL (lit.) 125 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Microelectronics
Materials for Thin Films/
99 g of 150 · 150 mm 32,641-0 wire, diam. 0.64 mm, 99.999% 5.8 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . . 8.94 g/mL (lit.)
34,917-8 foil, thickness 0.25 mm, 99.98% 5.5 g 5.8 g of 2 m
49.5 g of 150 · 150 mm 49.5 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.5 g of 50 · 50 mm 34,923-2 wire, diam. 0.5 mm, 99.999% 8.8 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . 8.96 g/mL (lit.) 35.2 g
34,918-6 foil, thickness 0.1 mm, 99.98% 2.2 g 35.2 g of 20 m
Density. . . . . . . . . . . . . . . 8.96 g/mL (lit.) 19.8 g 8.8 g of 5 m
19.8 g of 150 · 150 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2 g of 50 · 50 mm 32,642-9 wire, diam. 0.25 mm, 99.999% 4.4 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . . 8.94 g/mL (lit.) 22 g
34,919-4 foil, thickness 0.05 mm, 99.98% 1.1 g 22 g of 50 m
Density. . . . . . . . . . . . . . . . 8.96 g/mL (lit.) 9.9 g 4.4 g of 10 m
1.1 g of 50 · 50 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.9 g of 150 · 150 mm 26,611-6 wire, diam. 0.1 mm, 99.999% 700 mg
800.558.9196 (USA)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . 8.94 g/mL (lit.) 7g
34,920-8 foil, thickness 0.025 mm, 99.98% 5g 7 g of 100 m
Density. . . . . . . . . . . . . . . . 8.96 g/mL (lit.) 33 g 700 mg of 10 m
33 g of 150 · 1000 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5 g of 150 · 150 mm 34,921-6 wire, diam. 1.0 mm, 99.9+% 70 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . 8.96 g/mL (lit.) 350 g
34,914-3 foil, thickness 1.0 mm, 99.98% 22 g 350 g of 50 m
Density. . . . . . . . . . . . . . . 8.96 g/mL (lit.) 198 g 70 g of 10 m
198 g of 150 · 150 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22 g of 50 · 50 mm 26,826-7 wire, diam. 0.5 mm, 99.9% 90 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 g of 250 m 450 g
31,140-5 granules, 99.90+%, ACS reagent, 10- 100 g
Ordering/Pricing: www.sigma-aldrich.com
90 g of 50 m
40 mesh 500 g
‡99.90% Dysprosium
P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.001%
insol. dil. HNO3. . . . . . . . . . . . . . . . . . . . . . . . . £0.02% CAS No. 7429-91-6
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 8.94 g/mL (lit.) Dy FW 162.5
Ag. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.002% . . . . . . . . . . . . . . . . . . . . . . . . . . . .
As. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £5 ppm 26,302-8 chips, 99.9% 5g
Fe. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005% S: 22-24/25
Mn. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.001% . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pb. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005% 26,106-8 foil, 99.9%, thickness 0.25 mm 1.3 g
Sb and Sn. . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.01% S: 22-24/25 5.2 g
R: 11 S: 16 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,107-6 ingot, 99.9% 10 g
51,890-5 plate, thickness 6.3 mm, 99.999% 26 g S: 22-24/25 50 g
26 g of 20·20 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,303-6 powder, 40 mesh, 99.9% 10 g
20,312-2 powder, 99.999% 10 g R: 11 S: 16-33-36/37/39
Density. . . . . . . . . . . . . . . . 8.92 g/mL (lit.) 50 g
R: 11 S: 16
334
High Purity Metals/Elements
Metals
24 g of 50 · 50 mm 24 g
Microelectronics
Materials for Thin Films/
Gadolinium 6 g of 25 · 25 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 7440-54-2 32,651-8 foil, thickness 0.25 mm, 99.99% 3g
12 g of 50 · 50 mm 12 g
Gd FW 157.3
3 g of 25 · 25 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,649-6 foil, thickness 0.127 mm, 99.99% 1.5 g
26,308-7 chips, 99.9% 10 g
1.5 g of 25 · 25 mm 6g
Density. . . . . . . . . . . . . . . 7.886 g/mL (lit.) 50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 g of 50 · 50 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,111-4 ingot, 99.9% 10 g 26,581-0 foil, thickness 0.1 mm, 99.99% 1.2 g
50 g 1.2 g of 25 · 25 mm 4.8 g
4.8 g of 50 · 50 mm
Gallium . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34,927-5 foil, thickness 0.05 mm, 99.99% 600 mg
CAS No. 7440-55-3 2.4 g of 50 · 50 mm 2.4 g
Ga FW 69.72 600 mg of 25 · 25 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
The wide liquid range of gallium was exploited recently when it 26,846-1 foil, thickness 0.025 mm, 99.99% 300 mg
was used as a solvent for the successful synthesis of ternary 1.2 g of 50 · 50 mm 1.2 g
silicides, SmNiSi3 and YNiSi3, without incorporating Ga in their 300 mg of 25 · 25 mm
structure – a promising new synthetic method. Chen, X.Z. et al. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chem. Mater. 1999, 11, 75. 34,925-9 foil, thickness 0.1 mm, 99.9+% 1.2 g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29.8 C (lit.) 1.2 g of 25 · 25 mm 4.8 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . 5.904 g/mL 25 C (lit.) 4.8 g of 50 · 50 mm
R: 34 S: 26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 34,924-0 foil, thickness 0.25 mm, 99.9+% 3g
20,331-9 99.9999% 1g 12 g of 50 · 50 mm 12 g
5g 3 g of 25 · 25 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
25 g 34,926-7 foil, thickness 0.025 mm, 99.9+% 300 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2 g of 50 · 50 mm 1.2 g
26,327-3 99.999% 1g
300 mg of 25 · 25 mm
10 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 g 32,659-3 powder, -20 mesh, 99.999+% 500 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
agglomerated 5g
26,326-5 99.99% 10 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 g 25,573-4 powder, -20 mesh, 99.99+% 1g
Applied in the synthesis of new low-
Germanium dimensional, quaternary gold selenophosphate
compounds, A3AuP2Se8 (a=Rb, K, Cs) and A2Au2P2Se6
CAS No. 7440-56-4 (a=Rb, K).Chondroudis, K. et al. Inorg. Chem. 1997, 36,
Ge FW 72.64 2623.
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 937 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 5.35 g/mL 25 C (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,323-0 chips, 3 mm, 99.9999% 10 g
R: 36/37/38 S: 26-36/39 50 g
335
High Purity Metals/Elements
Metals
Microelectronics
Materials for Thin Films/
R: 20/21/22-36/37/38 S: 26-36
600 mg of 1 cm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,730-8 foil, thickness 0.1 mm, 99.999% 1.8 g
26,579-9 wire, diam. 1.0 mm, 99.99% 750 mg Density. . . . . . . . . . . . . . . . .7.3 g/mL (lit.) 7.2 g
7.5 g of 50 cm 7.5 g 1.8 g of 50 · 50 mm
750 mg of 5 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2 g of 100 · 100 mm
R: 20/21/22-36/37/38 S: 26-36
31,098-0 wire, diam. 0.5 mm, 99.99% 380 mg . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.9 g of 50 cm 1.9 g 35,728-6 foil, thickness 0.5 mm, 99.99% 9.2 g
380 mg of 10 cm 36.8 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36.8 g
82.8 g of 150 · 150 mm 82.8 g
26,578-0 wire, diam. 0.25 mm, 99.99% 280 mg
9.2 g of 50 · 50 mm
2.8 g of 250 cm 2.8 g R: 20/21/22-36/37/38 S: 26-36
280 mg of 25 cm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,652-6 wire, diam. 0.127 mm, 99.99% 500 mg 35,729-4 foil, thickness 0.25 mm, 99.99% 4.6 g
800.558.9196 (USA)
Density. . . . . . . . . . . . . . . . 7.3 g/mL (lit.) 18.4 g
2.5 g of 10 m 2.5 g 18.4 g of 100 · 100 mm 41.4 g
500 mg of 2 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6 g of 50 · 50 mm
34,928-3 wire, diam. 0.1 mm, 99.99% 150 mg 41.4 g of 150 · 150 mm
150 mg of 1 m 750 mg R: 20/21/22-36/37/38 S: 26-36
750 mg of 5 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,405-9 foil, thickness 0.127 mm, 99.99% 2.3 g
32,653-4 wire, diam. 0.25 mm, 99.9+% 280 mg Vapor pressure. . . . . . <0.01 mm Hg ( 25 C) 9.2 g
2.8 g of 250 cm 2.8 g Density. . . . . . . . . . . . . . . . .7.3 g/mL (lit.)
280 mg of 25 cm 2.3 g of 50 · 50 mm
9.2 g of 100 · 100 mm Ordering/Pricing: www.sigma-aldrich.com
R: 20/21/22-36/37/38 S: 26-36
Hafnium . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,661-5 pieces, 99.99% 50 g
26,677-9 CAS No. 7440-58-6 2g Vapor pressure. . . . . . . <0.01 mm Hg ( 25 C)
Hf FW 178.5 Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 7.3 g/mL (lit.)
wire, diam. 1.0 mm, 99.9+% (Purity excludes ~2% approx. piece size. . . . . . . . . . . . . . . . . . . . . . . . 1=4 -2 in.
zirconium) R: 20/21/22-36/37/38 S: 26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
20,343-2 powder, -60 mesh, 99.999% 5g
Holmium Vapor pressure. . . . . . . <0.01 mm Hg ( 25 C) 25 g
mp . . . . . . . . . . . . . . . . . . . . 156 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 7.3 g/mL (lit.)
CAS No. 7440-60-0
R: 11-20-36/37/38 S: 9-16-36/37/39
Ho FW 164.9 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S: 22-24/25 26,403-2 powder, -100 mesh, 99.99% 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
45,795-7 chips, 99.9% 5g Some agglomeration possible 25 g
Density. . . . . . . . . . . . . . . . . 8.8 g/mL (lit.) 25 g Vapor pressure. . . . . . . <0.01 mm Hg ( 25 C)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 11-20-36/37/38 S: 9-16-36/37/39
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,112-2 ingot, 99.9% 5g
27,795-9 powder, 99.99% (Purity excludes ~1% 10 g
Density. . . . . . . . . . . . . . . 8.799 g/mL (lit.) 25 g
Mg as anticaking agent) 50 g
Vapor pressure. . . . . . . <0.01 mm Hg ( 25 C)
R: 11-20-36/37/38 S: 9-16-36/37/39
336
High Purity Metals/Elements
Metals
R: 36 S: 16-26-36/37/39 2.5 g
26,411-3 shot, diam. 2-5 mm, 99.999% 5g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Vapor pressure. . . . . . . <0.01 mm Hg ( 25 C) 25 g 26,682-5 sponge, -20 mesh, 99.9% 1g
Density. . . . . . . . . . . . . . . . . 7.3 g/mL (lit.) R: 11-36 S: 16-26-36/37/39
R: 20/21/22-36/37/38 S: 26-36 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,710-3 wire, diam. 0.5 mm, 99.9% 130 mg
30,913-3 shot, diam. 2-5 mm, 99.99% 10 g 130 mg of 30 mm 650 mg
Vapor pressure. . . . . . . <0.01 mm Hg ( 25 C) 50 g 650 mg of 150 mm
R: 20/21/22-36/37/38 S: 26-36 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,684-1 wire, diam. 0.15 mm, 99.9% 40 mg
32,660-7 shot, diam. 2-5 mm, 99.9+% 10 g 400 mg
Vapor pressure. . . . . . . <0.01 mm Hg ( 25 C) 50 g
R: 20/21/22-36/37/38 S: 26-36 Iron
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
35,706-5 wire, diam. 2.0 mm, 99.999% 4.5 g
Density. . . . . . . . . . . . . . . . 7.3 g/mL (lit.) 22.5 g CAS No. 7439-89-6
22.5 g of 100 cm Fe FW 55.85
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
4.5 g of 20 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 20/21/22-36/37/38 S: 26-36
Microelectronics
Materials for Thin Films/
26,795-3 powder, 10 mm, 99.9+% 5g 26,591-8 foil, thickness 0.5 mm, 99.999% 14 g
R: 11 S: 16-33 250 g 14 g of 50 · 50 mm 56 g
1 kg 56 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 20/21/22 S: 7-22-36-45
26,621-3 rod, diam. 6.3 mm, 99.98% 30 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150 g of 5 · 125 mm 150 g 35,691-3 foil, thickness 0.25 mm, 99.999% 7g
30 g of 125 mm 28 g of 100 · 100 mm 28 g
R: 25-36 S: 26-36/37/39-45 7 g of 50 · 50 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 61-33-40-48/22-50/53 S: 53-45-60-61
26,625-6 wire, diam. 1.0 mm, 99.99+% 3.1 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15.5 g of 250 cm 15.5 g 35,692-1 foil, thickness 0.127 mm, 99.99+% 3.5 g
3.1 g of 50 cm 14 g of 100 · 100 mm 14 g
R: 25-36 S: 26-36/37/39-45 3.5 g of 50 · 50 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 20/21/22 S: 7-22-36-45
26,624-8 wire, diam. 0.5 mm, 99.99+% 750 mg . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.5 g of 500 cm 7.5 g 36,974-8 ingot, 99.995% 50 g
750 mg of 50 cm R: 20/21/22 S: 7-22-36-45
R: 25-36 S: 26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,584-5 powder, -100 mesh, 99.999% 20 g
Microelectronics
Materials for Thin Films/
R: 25-36 S: 26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 20/21/22 S: 7-22-36-45 250 g
35,683-2 wire, diam. 0.5 mm, 99.9+% 1.5 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 g of 1 m 39,611-7 shot, 0.5 mm, 99.9% 500 g
7.5 g
7.5 g of 5 m R: 20/22 S: 7-22-36-45 2 kg
R: 25-36 S: 26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,589-6 wire, diam. 2.0 mm, 99.999% 18 g
35,684-0 wire, diam. 0.25 mm, 99.9+% 800 mg 18 g of 50 cm 90 g
4 g of 10 m 4g 90 g of 250 cm
800 mg of 2 m R: 20/21/22 S: 7-22-36-45
R: 25-36 S: 26-36/37/39-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
35,701-4 wire, diam. 0.5 mm, 99.999% 2.2 g
R: 20/21/22 S: 7-22-36-45 11 g
Lanthanum . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,588-8 wire, diam. 1.0 mm, 99.99% 8.9 g
800.558.9196 (USA)
CAS No. 7439-91-0 44.5 g of 500 cm 44.5 g
La FW 138.9 8.9 g of 100 cm
R: 20/21/22 S: 7-22-36-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,311-7 chips, 99.9% 25 g
Lithium
Packaged under argon
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 920 C (lit.)
CAS No. 7439-93-2
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 6.19 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Li FW 6.941
26,113-0 ingot, 99.9% 25 g A high-energy, new battery system using only inorganic
Packaged under oil 100 g constituents has been designed where Li and LiCoO2 serve as
. . . . . . . . . . . . . . . . . . . . . . . . . . . . the electrodes in a LiAlCl4-in-SO2 liquid electrolyte.,
Ordering/Pricing: www.sigma-aldrich.com
26,310-9 powder, -40 mesh, 99.9% 25 g References
Packaged under oil and argon 100 g Doege, V. et al., Proc. Annu. Battery Conf. Appl. Adv., 10th 313 (1995)
R: 11 S: 16-33-36/37/39 R: 14/15-34 S: 8-43-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead 49,981-1 granules, 99.9+% 25 g
mp . . . . . . . . . . . . . . . . . . . 180 C (lit.) 100 g
CAS No. 7439-92-1
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,597-7 ingot, diam. 5.7 cm, 99.9% 115 g
Pb FW 207.2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Packaged under argon 460 g
26,592-6 foil, thickness 1.0 mm, 99.9995% 28 g mp . . . . . . . . . . . . . . . . . . . 180 C (lit.)
112 g of 100 · 100 mm 112 g 115 g of 9 cm
28 g of 50 · 50 mm 460 g of 4 · 9 cm
R: 20/21/22 S: 7-22-36-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,598-5 ribbon, thickness 0.38 mm · width 25 g
35,723-5 foil, thickness 2.0 mm, 99.999% 14 g 23 mm, 99.9% 100 g
14 g of 25 · 25 mm 56 g Packaged under argon
56 g of 50 · 50 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 20/21/22 S: 7-22-36-45 26,599-3 99.9%, thickness 0.75 mm · width 25 g
45 mm, ribbon 100 g
Packaged under argon
338
High Purity Metals/Elements
Metals
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Mercury
Microelectronics
Materials for Thin Films/
36,698-6 powder, 10 mm, 99.99+% 10 g 35,754-5 foil, thickness 1.0 mm, 99.98% 5.6 g
Used in the solid state synthesis of a 50 g Density. . . . . . . . . . . . . . . . 8.9 g/mL (lit.) 22.4 g
remarkable ternary, reduced molybdenum 22.4 g of 50 · 50 mm 89.6 g
oxide, Pr4Mo9O18, whose structure contains previously 5.6 g of 25 · 25 mm
89.6 g of 100 · 100 mm
unknown Mo7, Mo13and Mo19 clusters. The new cluster
R: 40-43 S: 22-36
product is a small band gap semiconductor. Tortelier, J. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gougeon, P. Inorg. Chem. 1998, 37, 6229. 35,755-3 foil, thickness 0.5 mm, 99.98% 2.8 g
R: 11 S: 9-16-36/37/39 Density. . . . . . . . . . . . . . . . 8.9 g/mL (lit.) 11.2 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.2 g of 50 · 50 mm
51,009-2 powder, 1-2 mm, 99.9+% 50 g 44.8 g
2.8 g of 25 · 25 mm
R: 11 S: 9-16-36/37/39 250 g 44.8 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 40-43 S: 22-36
20,382-3 powder, -100 mesh, 99.9+% 100 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Used in the solid state synthesis of a 500 g 35,756-1 foil, thickness 0.25 mm, 99.98% 1.4 g
remarkable ternary, reduced molybdenum Density. . . . . . . . . . . . . . . . 8.9 g/mL (lit.) 5.6 g
oxide, Pr4Mo9O18, whose structure contains previously 1.4 g of 25 · 25 mm 22.4 g
unknown Mo7, Mo13and Mo19 clusters. The new cluster 22.4 g of 100 · 100 mm
Microelectronics
Materials for Thin Films/
Neodymium 20,390-4 powder, -100 mesh, 99.99% 25 g
Employed in the synthesis of a metal-rich 100 g
CAS No. 7440-00-8 layered telluride, TaNi2Te2, which 500 g
Nd FW 144.2 possesses ideal characteristics for
R: 11-36/37/38 S: 16-26-33-36/37/39
. . . . . . . . . . . . . . . . . . . . . . . . . . . . photovoltaic applications, for surface scanning studies,
26,314-1 chips, 99.9% 25 g and which may give clean and atomically flat surfaces.
bp. . . . . . . . . . . .3074 C/760 mm Hg (lit.) 100 g Neuhasen, J. et al. Chem. Mater. 1998, 10, 3870.
Density. . . . . . . . . . . . . . .7.003 g/mL (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 8.9 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 10-17-36/37/38-40-42/43 S: 16-26-33-36
26,115-7 ingot, 99.9% 25 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100 g 26,707-4 rod, diam. 6.35 mm, 99.99+% 14 g
Density. . . . . . . . . . . . . . . . . 8.9 g/mL (lit.) 42 g
Nickel See: Metals Page 150 14 g of 5 cm
42 g of 15 cm
800.558.9196 (USA)
Nickel R: 40-43 S: 22-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 7440-02-0 21,577-5 sphere, 6-16 mm, 99.95+% 250 g
Density. . . . . . . . . . . . . . . .8.9 g/mL (lit.) 1 kg
Ni FW 58.69
R: 40-43 S: 22-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35,759-6 wire, diam. 2.0 mm, 99.995% 1.4 g
43,365-9 evaporation slug, diam. 6.3 mm · 8.5 g
Density. . . . . . . . . . . . . . . . .8.9 g/mL (lit.) 7g
length 6.3 mm, 99.995% 1.4 g of 5 cm
Weight of one slug. . . . . . . . . . . . . . . . . . . . . . . . ~1.7 g 7 g of 25 cm
R: 40-43 S: 22-36 R: 40-43 S: 22-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering/Pricing: www.sigma-aldrich.com
27,896-3 evaporation slug, diam. 6.35 mm · 14 g 26,706-6 wire, diam. 1.0 mm, 99.995% 1.7 g
length 1 cm, 99.99% Density. . . . . . . . . . . . . . . . .8.9 g/mL (lit.) 6.8 g
R: 40-43 S: 22-36 1.7 g of 25 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.8 g of 100 cm
26,701-5 foil, thickness 1.0 mm, 99.995% 5.6 g R: 40-43 S: 22-36
22.4 g of 50 · 50 mm 22.4 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.6 g of 25 · 25 mm 26,705-8 wire, diam. 0.5 mm, 99.99+% 1.7 g
R: 40-43 S: 22-36 1.7 g of 100 cm 8.5 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.5 g of 500 cm
26,702-3 foil, thickness 0.5 mm, 99.995% 2.8 g R: 40-43 S: 22-36
11.2 g of 50 · 50 mm 11.2 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.8 g of 25 · 25 mm 26,703-1 wire, diam. 0.127 mm, 99.99+% 220 mg
R: 40-43 S: 22-36 Density. . . . . . . . . . . . . . . 8.9 g/mL (lit.) 1.1 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1 g of 10 m
26,700-7 foil, thickness 0.25 mm, 99.995% 1.4 g 220 mg of 2 m
1.4 g of 25 · 25 mm 5.6 g R: 40-43 S: 22-36
5.6 g of 50 · 50 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 40-43 S: 22-36 39,340-1 wire, diam. 2.0 mm, 99.9+% 2.8 g
Density. . . . . . . . . . . . . . . . . 8.9 g/mL (lit.) 14 g
14 g of 50 cm
2.8 g of 10 cm
R: 40-43 S: 22-36
340
High Purity Metals/Elements
Metals
11 g of 25 m 11 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2 g of 5 m 34,699-3 rod, diam. 3.1 mm, 99.9+% 1.9 g
R: 40-43 S: 22-36 1.9 g of 2 cm 9.5 g
9.5 g of 10 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Niobium 34,698-5 99.9+%, rod, diam. 6.25 mm 7.6 g
38 g of 10 cm 38 g
26,548-9 (Columbium) 10 g 7.6 g of 2 cm
CAS No. 7440-03-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Nb FW 92.91 26,708-2 sponge, 99.9% 1g
rod, diam. 12.7 mm, 99.9+% R: 36/37/38 S: 16-26-36-7/9 5g
10 g of 1 cm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,668-2 shot, diam. 1-8 mm, 99.9+% 1g
5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Osmium
26,711-2 wire, diam. 1.0 mm, 99.9% 900 mg
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
9 g of 100 cm 9g
CAS No. 7440-04-2
900 mg of 10 cm
Microelectronics
Materials for Thin Films/
Os FW 190.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 11-37/38-41 S: 16-26-36/37/39 34,869-4 wire, diam. 0.5 mm, 99.9% 960 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.8 g of 200 cm 4.8 g
37,276-5 powder, 99.995% 500 mg 960 mg of 40 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,325-7 powder, 99.9% 1g 32,669-0 wire, diam. 0.25 mm, 99.9% 600 mg
3 g of 5 m 3g
Palladium 600 mg of 1 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 7440-05-3 34,870-8 wire, diam. 0.1 mm, 99.9% 180 mg
Pd FW 106.4 180 mg of 2 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Platinum
37,319-2 evaporation slug, diam. 0.9 cm · 10.9 g
length 1.2 cm, 99.95% CAS No. 7440-06-4
Weight of one slug. . . . . . . . . . . . . . . . . . . . . . . . 10.9 g Pt FW 195.1
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
37,320-6 evaporation slug, diam. 0.6 cm · 2.4 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
length 0.6 cm, 99.95% 37,321-4 evaporation slug, diam. 0.6 cm · length 7 g
Weight of one slug. . . . . . . . . . . . . . . . . . . . . . . . .2.4 g 1.2 cm, 99.99%
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Weight of one slug. . . . . . . . . . . . . . . . . . . . . . . . . . 7 g
26,714-7 foil, thickness 0.5 mm, 99.99% 3.8 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
37,322-2 evaporation slug, diam. 0.6 cm · 4.3 g
34,864-3 foil, thickness 0.25 mm, 99.98% 1.9 g
1.9 g of 25 · 25 mm
length 0.6 cm, 99.99%
7.6 g Weight of one slug. . . . . . . . . . . . . . . . . . . . . . . . .4.3 g
7.6 g of 50 · 50 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,713-9 foil, thickness 0.1 mm, 99.9+% 750 mg 37,323-0 evaporation slug, diam. 0.3 cm · length 1 g
3 g of 50 · 50 mm 0.6 cm, 99.99%
750 mg of 25 · 25 mm Weight of one slug. . . . . . . . . . . . . . . . . . . . . . . . . . 1 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34,867-8 foil, thickness 1.0 mm, 99.9% 7.6 g 34,937-2 foil, thickness 1.0 mm, 99.99% 14 g
30.4 g 28 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28,747-4 foil, thickness 0.5 mm, 99.9% 3.8 g 26,726-0 foil, thickness 0.5 mm, 99.99% 7g
15.2 g of 50 · 50 mm 14 g of 25 · 50 mm 14 g
15.2 g
3.8 g of 25 · 25 mm 7 g of 25 · 25 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,670-4 foil, thickness 0.25 mm, 99.9% 1.9 g 34,932-1 foil, thickness 0.25 mm, 99.99% 3.5 g
1.9 g of 25 · 25 mm 14 g of 50 · 50 mm 14 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5 g of 25 · 25 mm
41,145-0 foil, thickness 0.05 mm, 99.9% 375 mg . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 g of 50 · 50 mm 1.5 g 34,934-8 foil, thickness 0.127 mm, 99.99% 1.7 g
375 mg of 25 · 25 mm 1.7 g of 25 · 25 mm 7g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 g of 50 · 50 mm
26,712-0 foil, thickness 0.025 mm, 99.9% 190 mg . . . . . . . . . . . . . . . . . . . . . . . . . . . .
190 mg of 25 · 25 mm 760 mg 26,725-2 foil, thickness 0.1 mm, 99.99% 1.3 g
760 mg of 50 · 50 mm 1.3 g of 25 · 25 mm 5.3 g
5.3 g of 50 · 50 mm
341
High Purity Metals/Elements
Metals
34,935-6 foil, thickness 0.05 mm, 99.99% 600 mg 26,720-1 wire, diam. 0.5 mm, 99.99% 400 mg
2.4 g of 50 · 50 mm 2.4 g 2 g of 50 cm 2g
600 mg of 25 · 25 mm 400 mg of 10 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34,936-4 foil, thickness 0.025 mm, 99.99% 350 mg 26,717-1 wire, diam. 0.25 mm, 99.99% 250 mg
1.4 g of 50 · 50 mm 1.4 g 2.5 g of 250 cm 2.5 g
350 mg of 25 · 25 mm 250 mg of 25 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30,379-8 foil, thickness 0.05 mm, 99.9+% 1.5 g 26,716-3 wire, diam. 0.127 mm, 99.99% 270 mg
1.5 g of 38 · 38 mm 5g 1.3 g of 500 cm 1.3 g
5 g of 38 · 120 mm 270 mg of 100 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,741-7 foil, thickness 0.635 mm, 99.9% 8.5 g 35,736-7 wire, diam. 0.10 mm, 99.99% 180 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Suitable for thermocouple use 900 mg
30,518-9 foil, thickness 0.5 mm, 99.9% 7g 180 mg of 1 m
14 g of 25 · 50 mm 14 g 900 mg of 5 m
7 g of 25 · 25 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 34,939-9 wire, diam. 1.5 mm, 99.9+% 950 mg
32,742-5 foil, thickness 0.25 mm, 99.9% 3.5 g
Microelectronics
Materials for Thin Films/
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,782-1 wire, diam. 0.127 mm, 99.9% 270 mg
29,810-7 gauze, 52 mesh, 99.9% 425 mg 1.3 g of 500 cm 1.3 g
1.7 g of 50 · 50 mm 1.7 g 270 mg of 100 cm
425 mg of 25 · 25 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
29,809-3 gauze, 100 mesh, 99.9% 425 mg Potassium
1.7 g of 50 · 50 mm 1.7 g
425 mg of 25 · 25 mm 24,485-6 CAS No. 7440-09-7 1g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . K FW 39.10 5g
20,401-3 powder, 99.999% 1g ingot, 99.95% 25 g
R: 11 S: 16-33-7/9 Packaged in ampules
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Vapor pressure. . . . . . . . . . . . . . . . . 0.09 mm Hg ( 260 C)
20,404-8 coarse powder, 99.99% 1g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 C (lit.)
R: 11 S: 16-33-7/9 5g Density. . . . . . . . . . . . . . . . . . . . . . . . . . 0.86 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
800.558.9196 (USA)
R: 14/15-34 S: 8-43-45
32,744-1 powder, 0.5-1.2 mm, 99.9+% 500 mg
R: 11 S: 16-33-7/9 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Praseodymium
32,747-6 powder, 0.27-0.47 mm, 99.9% 500 mg
R: 11 S: 16-33-7/9 5g CAS No. 7440-10-0
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Pr FW 140.9
32,746-8 powder, 0.8-2.2 mm, 99.9% 500 mg
R: 11 S: 16-33-7/9 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,316-8 chips, 99.9% 5g
32,748-4 shot, 3 mm, 99.9+% 1g R: 17 S: 17 25 g
R: 11 S: 16-33-7/9 5g . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ordering/Pricing: www.sigma-aldrich.com
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,117-3 ingot, 99.9% 10 g
26,715-5 99.9+% 1g R: 17 S: 17 50 g
R: 11 S: 16-33-7/9 5g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,317-6 powder, 40 mesh, 99.9% 5g
35,735-9 wire, diam. 0.20 mm, 99.99+% 700 mg R: 11 S: 16-33-7/9 25 g
Suitable for thermocouple use 3.5 g
3.5 g of 5 m Rhenium
700 mg of 1 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CAS No. 7440-15-5
35,737-5 wire, diam. 0.076 mm, 99.99+% 100 mg Re FW 186.2
Suitable for thermocouple use 500 mg
100 mg of 1 m . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500 mg of 5 m 45,998-4 foil, thickness 1.0 mm, 99.98% 13 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . bp. . . . . . . . . . . . 5596 C/760 mm Hg (lit.) 52 g
44,468-5 wire, diam. 2.0 mm, 99.99% 1.4 g 13 g of 25 · 25 mm
1.4 g of 2 cm 7g 52 g of 50 · 50 mm
7 g of 10 cm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,730-9 foil, thickness 0.1 mm, 99.98% 1.3 g
26,723-6 wire, diam. 1.0 mm, 99.99% 350 mg 5.2 g
3.5 g of 20 cm 3.5 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350 mg of 2 cm 26,731-7 foil, thickness 0.25 mm, 99.98% 3.3 g
13.2 g of 50 · 50 mm 13.2 g
3.3 g of 25 · 25 mm
342
High Purity Metals/Elements
Metals
Microelectronics
Materials for Thin Films/
3.3 g of 50 · 50 mm 50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,697-6 foil, thickness 2.0 mm, 99.9% 13.2 g 26,559-4 wire, diam. 1.0 mm, 99.99+% 4.1 g
13.2 g of 25 · 25 mm 52.8 g 20.5 g of 250 cm 20.5 g
52.8 g of 50 · 50 mm 4.1 g of 50 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34,872-4 foil, thickness 1.5 mm, 99.9% 9.9 g 26,558-6 wire, diam. 0.5 mm, 99.99+% 2g
39.6 g 10 g of 500 cm 10 g
158.4 g 2 g of 100 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,554-3 foil, thickness 1.0 mm, 99.9% 6.6 g 32,703-4 wire, diam. 0.25 mm, 99.99+% 2.6 g
26.4 g of 50 · 50 mm 26.4 g 13 g of 25 m 13 g
6.6 g of 25 · 25 mm 2.6 g of 5 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
34,507-5 foil, thickness 0.5 mm, 99.9% 13.2 g 34,875-9 diam. 1.5 mm, 99.99+% 5g
800.558.9196 (USA)
13.2 g of 50 · 50 mm 52.8 g 20 g of 100 cm 20 g
52.8 g of 100 · 100 mm 5 g of 25 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32,698-4 foil, thickness 0.25 mm, 99.9% 6.6 g 26,743-0 wire, diam. 2.0 mm, 99.99+% 6.6 g
26.4 g of 100 · 100 mm 33 g of 100 cm 33 g
26.4 g
6.6 g of 50 · 50 mm 6.6 g of 20 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,552-7 foil, thickness 0.1 mm, 99.9% 2.6 g 32,701-8 diam. 2.0 mm, 99.9% 16.5 g
10.4 g of 100 · 100 mm 16.5 g of 50 cm 82.5 g
10.4 g
2.6 g of 50 · 50 mm 82.5 g of 250 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,561-6 wire, diam. 1.5 mm, 99.9% 10 g
Ordering/Pricing: www.sigma-aldrich.com
32,699-2 foil, thickness 0.075 mm, 99.9% 2g
8g 10 g of 50 cm 50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 g of 250 cm
34,874-0 foil, thickness 0.05 mm, 99.9% 1.3 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.3 g of 50 · 50 mm 26,560-8 wire, diam. 1.0 mm, 99.9% 8.2 g
5.2 g
5.2 g of 100 · 100 mm 41 g of 500 cm 41 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.2 g of 100 cm
26,551-9 foil, thickness 0.025 mm, 99.9% 650 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
13 g of 100 · 500 mm
32,702-6 wire, diam. 0.5 mm, 99.9% 4g
2.6 g
20 g of 10 m 20 g
2.6 g of 100 · 100 mm 13 g 4 g of 2 m
650 mg of 50 · 50 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
30,337-2 granules, +60 mesh, 99.99% 10 g 26,557-8 wire, diam. 0.25 mm, 99.9% 10.4 g
10.4 g of 20 m 52 g
50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 g of 100 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
46,103-2 needles, 99.99+%, 30-60 mesh 10 g
34,878-3 wire, diam. 0.1 mm, 99.9% 200 mg
50 g 200 mg of 2.5 m 800 mg
250 g 800 mg of 10 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25,574-2 powder, -30 mesh, 99.999% 1g 26,555-1 wire, diam. 0.127 mm, 99.99% 330 mg
10 g 3.3 g of 25 m 3.3 g
330 mg of 2.5 m
344
High Purity Metals/Elements
Metals
R: 11-36/37/38 S: 16-26-33-36/37/39
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.968 g/mL (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 14/15-34 S: 8-43-45 26,285-4 rod, diam. 6.35 mm, 99.9+% 25 g
125 g
Strontium . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35,698-0 rod, diam. 3.2 mm, 99.9+% 6.5 g
CAS No. 7440-24-6 32.5 g of 25 cm 32.5 g
Sr FW 87.62 6.5 g of 5 cm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Used to make Strontium-potassium-niobate (Sr2KNb5O15, 35,699-9 wire, diam. 2.0 mm, 99.9+% 10 g
SKN). SKN is of great interest for pyroelectric sensors and 10 g of 20 cm
various electro-optic devices.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Packaged under argon in ampules 26,286-2 wire, diam. 1.0 mm, 99.9+% 13 g
Applied in the solid state synthesis of a Zintl phase, SrSn3Sb4, 13 g of 1 m 65 g
with an anionic channel framework of 30-membered rings. 65 g of 5 m
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chow, D.T. et al. Inorg. Chem.1997, 36, 3750. 35,700-6 wire, diam. 0.5 mm, 99.9+% 3.3 g
References
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
3.3 g of 1 m 33 g
Sakamoto, W., J. Mater. Res. 14, 1495 (1999) 33 g of 10 m
Microelectronics
Materials for Thin Films/
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,287-0 wire, diam. 0.25 mm, 99.9+% 4g
44,189-9 Purified by distillation, dendritic 5g 4 g of 5 m 40 g
pieces, 99.99% 25 g 40 g of 50 m
mp . . . . . . . . . . . . . . . . . . . . 757 C (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6 g/mL (lit.) 26,290-0 wire, diam. 0.127 mm, 99.9+% 200 mg
R: 11-14-38 S: 16-26-36/37/39-7/9
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tellurium
46,034-6 Purified by distillation, dendritic 5g
pieces, 99.9% 25 g CAS No. 13494-80-9
mp . . . . . . . . . . . . . . . . . . . . 769 C (lit.)
Te FW 127.6
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.63 g/mL (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . . . . . 990 C/760 mm Hg (lit.)
R: 11-14 S: 16-26-36/37/39-7/9
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 6.24 g/mL 25 C (lit.)
Tantalum . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,330-3 granules, -5-+50 mesh, 99.99% 25 g
CAS No. 7440-25-7 R: 11-26/27/28 S: 16-27-36/37/39-45
Ta FW 180.9 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,331-1 ingot, 99.999% 50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 26/27/28 S: 22-36/37/39-45
26,288-9 foil, thickness 1.0 mm, 99.9+% 10.4 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.4 g of 25 · 25 mm 41.6 g 20,454-4 pieces, 99.999% 20 g
41.6 g of 50 · 50 mm R: 26/27/28 S: 22-36/37/39-45 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35,725-1 foil, thickness 0.5 mm, 99.9+% 20.8 g 26,486-5 powder, -40 mesh, 99.997% 5g
20.8 g of 50 · 50 mm 83.2 g R: 25 S: 22-28-36/37/39-45 25 g
83.2 g of 100 · 100 mm 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,289-7 foil, thickness 0.25 mm, 99.9+% 10.4 g 45,237-8 shot, 1-2 mm, 99.999% 5g
10.4 g of 50 · 50 mm 41.6 g Packaged under argon in ampules 25 g
41.6 g of 100 · 100 mm low oxide. . . . . . . . . . . . . . . . . . contains 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 26/27/28 S: 22-36/37/39-45
35,724-3 foil, thickness 0.05 mm, 99.9+% 2.1 g
18.9 g of 150 · 150 mm 8.4 g
2.1 g of 50 · 50 mm Terbium
18.9 g
8.4 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CAS No. 7440-27-9
26,291-9 foil, thickness 0.025 mm, 99.9+% 9g Tb FW 158.9
31 g of 150 · 500 mm 31 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9 g of 150 · 150 mm 26,320-6 chips, 99.9% 1g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Density. . . . . . . . . . . . . . . . 8.234 g/mL (lit.) 5 g
54,500-7 powder 10 g S: 22-24/25
R: 11-36/37/38 S: 16-26-33-36/37/39 50 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,127-0 ingot, 99.9% 1g
S: 22-24/25
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,321-4 powder, 99.9% 1g
R: 11 S: 16-33-36/37/39
345
High Purity Metals/Elements
Metals
Microelectronics
Materials for Thin Films/
26,572-1 foil, thickness 0.025 mm, 99.999% 900 mg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.5 g of 50 · 500 mm 26,754-6 foil, thickness 0.25 mm, 99.9+% 12 g
4.5 g
900 mg of 50 · 100 mm 12 g of 50 · 50 mm 48 g
48 g of 100 · 100 mm
R: 36/37/38 S: 26-36 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,575-6 foil, thickness 0.5 mm, 99.998% 9g 35,719-7 foil, thickness 0.127 mm, 99.9+% 6g
36 g of 100 · 100 mm 24 g of 100 · 100 mm 24 g
36 g
9 g of 50 · 50 mm 6 g of 50 · 50 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38 S: 26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26,753-8 foil, thickness 0.05 mm, 99.9+% 2.4 g
2.4 g of 50 · 50 mm 9.6 g
46,038-9 foil, thickness 1.0 mm, 99.9% 19 g
mp . . . . . . . . . . . . . . . . . . . 231.9 C (lit.) 78 g 9.6 g of 100 · 100 mm
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . 7.31 g/mL (lit.)
35,742-1 powder, 10 mm, 99.99+% 10 g
19 g of 50 · 50 mm
800.558.9196 (USA)
R: 17-36/38 S: 6-26-36 100 g
78 g of 100 · 100 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38 S: 26-36 20,476-5 powder, 100 mesh, 99.95% 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 17-36/38 S: 6-26-36
26,823-2 foil, thickness 0.33 mm, 99.9% 55 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55 g of 150 · 150 mm 51,010-6 monocrystalline powder, 0.6-1 mm, 100 g
R: 36/37/38 S: 26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 99.9+% 500 g
35,694-8 foil, thickness 0.127 mm, 99.9% 20.7 g R: 17-36/38 S: 6-26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . 7.31 g/mL (lit.)
26,751-1 powder, 12 mm, 99.9% 25 g
20.7 g of 150 · 150 mm
R: 17-36/38 S: 6-26-36 100 g
R: 36/37/38 S: 26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 g Ordering/Pricing: www.sigma-aldrich.com
26,567-5 rod, diam. 6 mm, 99.998% 20 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38 S: 26-36 27,632-4 rod, diam. 4.0 mm, 99.99% 24 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 g of 100 mm
20,469-2 shot, 99.999% 10 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applied in the solid state synthesis of a Zintl 50 g 26,756-2 wire, diam. 1.0 mm, 99.99% 15 g
15 g of 1 m
phase, SrSn3Sb4, with an anionic channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .
framework of 30-membered rings. Chow, D.T. et al. 26,755-4 wire, diam. 0.25 mm, 99.9+% 9.5 g
Inorg. Chem. 1997, 36, 3750. 9.5 g of 10 m 95 g
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231.9 C (lit.) 95 g of 100 m
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 7.3 g/mL (lit.) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 36/37/38 S: 26-36 35,697-2 wire, diam. 0.5 mm, 99.9+% 18.9 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18.9 g of 5 m 94.5 g
26,759-7 shot, 3 mm, 99.95% 25 g 94.5 g of 25 m
Applied in the solid state synthesis of a 100 g
Zintl phase, SrSn3Sb4, with an anionic
channel framework of 30-membered rings. Chow, D.T. et
al. Inorg. Chem. 1997, 36, 3750.
R: 36/37/38 S: 26-36
346
High Purity Metals/Elements
Metals
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,130-0 ingot, 99.9% 5g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 20/21/22 S: 36 25 g 35,599-2 foil, thickness 0.5 mm, 99.9% 9.2 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 g of 100 · 100 mm 36 g
46,606-9 powder, 99.9+% 2g 9.2 g of 50 · 50 mm
Density. . . . . . . . . . . . . . . . 6.54 g/mL (lit.) 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 11-20/21/22 S: 16-33-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,601-8 foil, thickness 0.25 mm, 99.9% 4.5 g
26,129-7 powder, -40 mesh, 99.9% 2g 18 g of 100 · 100 mm 18 g
4.5 g of 50 · 50 mm
Packaged under oil 10 g
R: 11-20/21/22 S: 16-33-36 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35,602-6 foil, thickness 0.127 mm, 99.9% 2.3 g
Yttrium 2.3 g of 50 · 50 mm 9.2 g
9.2 g of 100 · 100 mm
CAS No. 7440-65-5
Y FW 88.91 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Zr FW 91.22 HO C C OH
O O
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
49,742-8 crystal bar, turnings, 99.9+% 25 g
R: 15-17 S: 43-7/8 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26,767-8 foil, thickness 0.025 mm, 99.95% 100 mg 43,117-6 electronic grade 1g
Microelectronics
Materials for Thin Films/
(lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . 174 C/760 mm Hg (lit.)
Gallium-indium eutectic Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 F
Tg. . . . . . . . . . . . . . . . . . . . . . . . . . . . .>400 C (imide)
49,542-5 99.99+% 5g Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.04 g/mL (lit.)
liquid 25 g R: 45-65
mp . . . . . . . . . . . . . . . . . . . . 15.7 C (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 6.25 g/mL (lit.) 57,580-1 (Pyre-M.L. RC-5019) 250 mL
15 wt. % in NMP 1L
Forms insoluble, inert polyimide upon 4L
Sodium mercury amalgam baking.
Viscous liquid
CAS No. 11110-52-4 Concentration. . . . . . . . . . . . . . . . 15.0-16.0 wt. % in NMP
Packaged under argon in ampules nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.507
800.558.9196 (USA)
R: 11-14/15-23/24/25-33-34-42/43 S: 16-26-36/37/39-45 Viscosity. . . . . . . . . . . . . . . . . . . . . . . . . . . 50-70 poise
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 F
45,189-4 beads, 99.9+% 10 g Density. . . . . . . . . . . . . . . . . . . . . . . . 1.166 g/mL 25 C
Magnetic characteristics were studied of 50 g R: 36/38 S: 26-36
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
organometallic oxo-vanadium cluster
59,305-2 11 wt. % in NMP/aromatic 250 mL
compounds, such as [C5Me5V]4(m-O)6, which is formed by
hydrocarbons 1L
reduction with sodium mercury amalgam. Abernethy,
Forms insoluble, inert polyimide upon 4L
C.D. et al. Organometallics 1999, 18, 870.
baking.
Na 10% Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 F
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223 C (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.066 g/mL
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Ordering/Pricing: www.sigma-aldrich.com
R: 45-65
45,190-8 beads, 99.9+% 10 g . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Magnetic characteristics were studied of 50 g 57,582-8 (Pyre-M.L. RC-5057) 250 mL
organometallic oxo-vanadium cluster 15.0 wt. %–5 wt. % in NMP/ 1L
compounds, such as [C5Me5V]4(m-O)6, which is formed by aromatic hydrocarbons (80%/20% 4L
reduction with sodiummercury amalgam. Abernethy, C.D. solvent ratio)
et al. Organometallics 1999, 18, 870. Forms insoluble, inert polyimide upon baking.
Na 5% Viscous liquid
Solubility
water. . . . . . . . . . . . . . . . . . . . . . . . . . . 65-71 wt. %
nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5120
Viscosity. . . . . . . . . . . . . . . . . . . . . . . . . . . 50-70 poise
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.090 g/mL
R: 45-65
348
Polyamic Acids for High k Dielectrics
Concentration. . . . 12.3-13.3 wt. % (80% NMP/20% aromatic Cadmium telluride Coating quality Balzers
hydrocarbon)
nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5050
25,654-4 CAS No. 1306-25-8 10 g
Viscosity. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-12 poise
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 F
CdTe FW 240.0 50 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.085 g/mL powder, 5 mm, 99.99+%
R: 45-65 Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2 g/mL (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . R: 20/21/22-50/53 S: 60-61
57,577-1 (Pyre-M.L. RK-692) 250 mL
12 wt. % in NMP/xylene 1L Gallium arsenide
Forms insoluble, inert polyimide upon 4L
baking. 32,901-0 CAS No. 1303-00-0 1g
Viscous liquid GaAs FW 144.6 5g
Solubility pieces, 99.999%
water. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . miscible Density. . . . . . . . . . . . . . . . . . . . . . . . . . 5.31 g/mL (lit.)
Concentration. . 12.0 wt. %–0.5 wt. % (80% NMP/20% xylene) R: 23/25-50/53 S: 20/21-28-45-60-61
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5052
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 F Gallium nitride
Microelectronics
Materials for Thin Films/
Gallium phosphide
52,157-4 CAS No. 12063-98-8 2g
Semiconductors GaP FW 100.7 10 g
99.99%
Aluminum arsenide solid
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230 F
40,122-6 CAS No. 22831-42-1 5g R: 15/29-28 S: 28-36/37-45
AlAs FW 101.9 25 g
-60 mesh Germanium(II) selenide
R: 23/25-50/53 S: 20/21-28-45-60-61
Aluminum nitride nanopowder See: Ceramic Nanopowders Page 48,455-5 CAS No. 12065-10-0 1g
376 GeSe FW 151.6 5g
99.999%
Aluminum nitride solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670 C (lit.)
24,190-3 CAS No. 24304-00-5 50 g Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6 g/mL (lit.)
R: 23/24/25-33-36/37/38 S: 26-28-36/37/39-45
AlN FW 40.99 250 g
powder, 10 mm, 98+%
Density. . . . . . . . . . . . . . . . . . . . . . 3.26 g/mL 25 C (lit.) Germanium(II) telluride
R: 36/37/38 S: 26-37/39
48,457-1 CAS No. 12025-39-7 5g
Cadmium selenide GeTe FW 200.2
99.999%
24,460-0 CAS No. 1306-24-7 10 g solid
CdSe FW 191.4 50 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 725 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 6.14 g/mL (lit.)
10 mm, 99.99%, electronic grade
Dispersions with CdS (Aldrich products 20,818-3, 21,792-
1) deposited on glass or Si substrates results in tunable
Indium(III) nitride
red, yellow, or green florescent material. 49,062-8 CAS No. 25617-98-5 1g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 5.81 g/mL (lit.)
References
InN FW 128.8 5g
Wang, Y. et al., J. Amer. Chem. Soc. 125, 2830 (2003) 99.9%
R: 20/21/22-50/53 S: 60-61 solid
349
Semiconductors
Microelectronics
Materials for Thin Films/
33,410-3 powder, 99.9+% 25 g
100 g Sol-Gel Precursors
. . . . . . . . . . . . . . . . . . . . . . . . . . . . For a complete listing of silicon, germanium, tin, and lead products
32,517-1 -325 mesh, predominantly a-phase 50 g please request your copy of the Group 14 Compounds from Aldrich
250 g brochure.
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
24,862-2 -325 mesh, predominantly b-phase 5g
100 g Ammonium acetate
500 g
37,233-1 CAS No. 631-61-8 10 g
CH3COONH4 FW 77.08 100 g
Tantalum nitride
99.999%
33,320-4 CAS No. 12033-62-4 10 g mp . . . . . . . . . . . . . . . . . . . . . . . . . 110-112 C (D) (lit.)
800.558.9196 (USA)
NTa FW 195.0 50 g
5 mm, 99.5% Acetylacetonates See: Metal b-dikenonates Page 295
For Nitrates See: Anhydrous Metal Nitrates Page 290
Titanium carbonitride
51,891-3 CAS No. 12654-86-3 250 g Aluminum
Ti2CN FW 121.8
powder, 1-2 mm, 99.8% Alumatrane tetramer
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >350 C (lit.)
47,739-7 (triethanolamine-aluminum complex) 10 g
Titanium nitride
Ordering/Pricing: www.sigma-aldrich.com
CAS No. 94118-26-0 50 g
C24H48Al4N4O12 FW 692.6
33,324-7 CAS No. 25583-20-4 50 g ethylene glycol. . . . . . . . . . . . . . . . . . . . . . . . . . . <15%
TiN FW 61.87 250 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270 C (D) (lit.)
10 mm, 99% Licensed under U.S. Patent 5 216 155
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 5.24 g/mL (lit.) R: 22-34-62-63 S: 53-26-36/37/39-45
O O O O
Vanadium nitride N Al N Al N Al N Al
O O O O
O O O O
33,633-5 CAS No. 24646-85-3 10 g
VN FW 64.95
-325 mesh, 99%
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 6.13 g/mL (lit.)
R: 20/21/22 S: 36
350
Sol-Gel Precursors
Aluminum
agent.
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Microelectronics
Materials for Thin Films/
Microelectronics
Materials for Thin Films/
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5-4.5 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 0.85 g/mL (lit.) Antimony(III) ethoxide
R: 14/15-17-34 S: 16-26-27-36/37/39-45
21,331-4 CAS No. 10433-06-4 5g
19,278-3 Diethylaluminum ethoxide solution 100 g
Sb(OC2H5)3 FW 256.9 25 g
(C2H5)2AlOC2H5 FW 130.2 700 g n20
D . . . . . . . . . . . . . . . . . . . . . 1.495 (lit.)
25 wt. % in toluene Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 F
Packaged under nitrogen in Sure/Seal bottles Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.513 g/mL (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.862 g/mL (lit.) R: 36/37/38 S: 26-36/37/39
R: 11-14-17-23/24/25-34 S: 16-26-36/37/39-45
OCH CH
2 3
Lithium aluminate See: Salts Page 50 Sb
CH CH O OCH CH
3 2 2 3
Lithium tetrakis(dimethylamino)aluminate
800.558.9196 (USA)
47,068-6 CAS No. 114236-99-6 1g
LiAl(N(CH3)2)4 FW 210.2 5g Antimony(III) isopropoxide
97%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >255 C (lit.) 47,073-2 CAS No. 18770-47-3 5 mL
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 F Sb(OCH(CH3)2)3 FW 299.0 25 mL
R: 34 S: 26-27-36/37/39-45
98%
CH
3
CH
3 liquid
N
CH
3
CH
3 bp. . . . . . . . . . . . . . . . . . . . . .53-54 C/0.25 mm Hg (lit.)
N Al N Li
CH CH Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 F Ordering/Pricing: www.sigma-aldrich.com
3 N 3
CH CH
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.307 g/mL (lit.)
3 3
R: 36/37/38 S: 26-36/37/39
CH
3
CH O CHCH
3 3
CH CH O Sb
3
O CHCH
3
Triethanolamine aluminate barium salt CH
3
Antimony(III) methoxide
53,834-5 Sb(OCH3)3 FW 214.9 5g
solid 25 g
mp . . . . . . . . . . . . . . . . . 123-127 C (lit.)
R: 20/22-36/37/38-51/53 S: 26-36-61
OCH
3
Sb
CH O OCH
3 3
352
Sol-Gel Precursors
Antimony
(CH3COO)2Ba FW 255.4 50 g
2
99.999% O CH O
2
Ba
2
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.47 g/mL (lit.)
R: 20/22 S: 28
C8H18BaO2 FW 283.6
C2H7BiO2 FW 272.1
Microelectronics
Materials for Thin Films/
98%
99.99+%
Used in the preparation of thin-film superconductors.
Aldrichimica Acta 1990, 23, 54. Bismuth aluminate hydrate
R: 20/22 S: 28
51,028-9 CAS No. 308796-32-9 500 g
Barium isopropoxide Bi2(Al2O4)3 xH2O FW 771.8
99.9+%
CAS No. 24363-37-9
Ba(OCH(CH3)2)2 FW 255.5
R: 20/22 S: 28
Bismuth neodecanoate
CH CH O Ba O CHCH
3 3 54,413-2 CAS No. 34364-26-6 250 g
CH CH
3 3 C30H57BiO6 FW 722.8 1 kg
liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.479 (lit.)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . bp. . . . . . . . . . . . . . . . . . . . . . . 300 C/760 mm Hg (lit.)
44,967-9 powder, 99.9% 2g Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >230 F
For preparation of bimetallic Ba-Nb and Ba- 10 g Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.145 g/mL (lit.)
Zr alkoxides.
Packaged under argon
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 200 C (dec.) (lit.) Boron
References
1. Turevskaya, E.P. et al., Polyhedron 14, 1531 (1995) Butyldiisopropoxyborane
2. Yamada, Y.M.A. Shibasaki, M., Tetrahedron Lett. 39, 5561
(1998) 27,797-5 (diisopropyl butylboronate) 10 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAS No. 86595-32-6
33,914-8 Technical Grade 5g
C10H23BO2 FW 186.1
25 g
98%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.395 (lit.)
Barium metasilicate bp. . . . . . . . . . . . . . . . . . . . 145-147 C/746 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 F
51,791-7 CAS No. 13255-26-0 100 g Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.794 g/mL (lit.)
BaO3Si FW 213.4 R: 10-36/37/38 S: 16-26-36/37/39
solid
Loss on ignition. . . . . . . . . . . . . . . . . . . . . . . . . . £10% Diethylmethoxyborane
R: 20/22 S: 28
CAS No. 7397-46-8
34,720-5 Diethylmethoxyborane 10 g
C5H13BO FW 99.97 50 g
97%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.387 (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.761 g/mL (lit.)
R: 11-36/37/38 S: 16-26-27-36/37/39
353
Sol-Gel Precursors
Boron
Cadmium
Microelectronics
Materials for Thin Films/
O
N
B
Cadmium acetate
O O
800.558.9196 (USA)
Packaged under nitrogen in Sure/Seal bottles 99.99+%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.389 (lit.)
Degree of hydration ~1-2
bp. . . . . . . . . . . . . . . . . . . . . . . . 101 C/74 mm Hg (lit.) Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.01 g/mL (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-19 C (lit.) R: 45 S: 53-26-28-36/37/39-45
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.811 g/mL (lit.)
R: 10 S: 16-33 Calcium
Triethoxyarsine Calcium acetate
27,274-4 CAS No. 3141-12-6 250 mg Ordering/Pricing: www.sigma-aldrich.com
C6H15AsO3 FW 210.1 1g
97% 40,285-0 Calcium acetate monohydrate 100 g
R: 23/25-50/53 S: 20/21-28-45-60-61 CAS No. 5743-26-0 500 g
Ca(C2H3O2)2 H2O FW 176.2
Triethyl borate 99+%, ACS reagent
‡99.0%
T5,930-7 (Triethoxyborane; Boric acid triethyl 100 mL Titr. Acid. . . . . . . . . . . . . . . . . . . . . . . . . £0.035 meq/g
ester; Boron ethoxide) 500 mL insolubles. . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005%
CAS No. 150-46-9 Cl-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.001%
SO42-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.01%
(C2H5O)3B FW 146.0
Ba. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.01%
99% Fe. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.001%
Packaged under nitrogen in Sure/Seal bottles Heavy metals. . . . . . . . . . . . . . . . . . . . . . . . . £0.005%
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . 5.04 (vs air) K. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.01%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.374 (lit.) Mg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.05%
bp. . . . . . . . . . . . . . . . . . . . 117-118 C/760 mm Hg (lit.) Na. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.02%
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 F Sr. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.05%
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.858 g/mL (lit.)
R: 11 S: 7-16-23
354
Sol-Gel Precursors
Calcium
Chromium
Calcium 2-ethylhexanoate
Chromium(II) acetate,dimer monohydrate
36,296-4 CAS No. 136-51-6 5g
C8H18CaO2 FW 186.3 25 g 23,801-5 CAS No. 14976-80-8 10 g
98% 50 g
R: 36/37/38 S: 26-37/39
Chromium(III) acetate hydroxide
Calcium isopropoxide
31,810-8 CAS No. 39430-51-8 5g
49,739-8 CAS No. 15571-51-4 2g
C14H23Cr3O16 FW 603.3 250 g
Ca(OCH(CH3)2)2 FW 158.3 10 g
Cr 24% 1 kg
powder, 99.9+% R: 20/21/22-36/37/38 S: 26-37/39
R: 34 S: 26-27-36/37/39-45
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
CH CH O Ca O CHCH
3 3
Microelectronics
Materials for Thin Films/
CH
3
CH
3 Cobalt
Cobalt(II) acetate
Microelectronics
Materials for Thin Films/
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.882 g/mL (lit.)
R: 22-36/37/38 S: 36/37/39 Gadolinium
34,174-6 Copper(II) acetate hydrate 5g Gadolinium(III) acetate hydrate
CAS No. 66923-66-8 100 g
98% 500 g 32,567-8 CAS No. 100587-93-7 25 g
Degree of hydration ~1 2.5 kg 99.9% 100 g
Vapor density. . . . . . . . . . . . . . 6.9 (vs air) R: 36/37/38 S: 26-37/39
R: 20-36/37/38 S: 22-26-36/37/39-38
Gadolinium(III) octanoate
Copper(II) 2-ethylhexanoate
41,326-7 CAS No. 29911-73-7 1g
33,732-3 CAS No. 149-11-1 5g C8H16GdO2 FW 301.5 5g
800.558.9196 (USA)
C8H16CuO2 FW 207.8 25 g 97%
mp . . . . . . . . . . . . . . . . . . 252 C (D) (lit.) R: 36/37/38 S: 26-36
R: 36/37/38 S: 26-37/39
OCH(CH )
32 O Hf
(CH ) CHO Ge OCH(CH )
32 32 CH
3
OCH(CH )
www.sigma-aldrich.com/safc
32 4
Germanium(IV) methoxide
39,636-2 (tetramethoxygermanium) 1g
CAS No. 992-91-6 5g
Ge(OCH3)4 FW 196.8
97%
Sol-gel intermediate in the formation of GeS2 and IR-
transparent optics. Ceram. Bull. 1984, 63, 1427. J. Am.
Chem. Soc. 1990, 112, 5636.
methyl alcohol. . . . . . . . . . . . . . . . . . . . . . . . . . . . £5%
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.399 (lit.)
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 F
1
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.325 g/mL (lit.) H NMR spectrum of Aldrich product 56,817-1, lot 92217AA
R: 10-23/24/25-36/37/38 S: 16-26-36/37/39-45
Holmium
Hafnium
Holmium(III) acetate hydrate
Hafnium tert-butoxide
46,733-2 CAS No. 312619-49-1 2g
44,554-1 CAS No. 2172-02-3 1g 99.99% 10 g
C16H36HfO4 FW 470.9 5g
99.99% (Purity excludes ~2000 ppm
zirconium.) Indium
liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.424 (lit.)
Indium(III) acetate
bp. . . . . . . . . . . . . . . . . . . . . . . . . .90 C/5 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.166 g/mL (lit.)
R: 10 S: 16-26-36 51,027-0 Indium(III) acetate 10 g
CAS No. 25114-58-3 50 g
C6H9InO6 FW 292.0
99.99%
solid
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270 C (D) (lit.)
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Microelectronics
Materials for Thin Films/
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 F . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.808 g/mL (lit.) 46,786-3 99.99+%, ReagentPlus, 99.0-103.0% 50 g
References total metallic impurities. . . . . . . . <100 ppm 250 g
1. Kominami, H. et al., Jpn. J. Appl. Phys., Part 2 35, L1600 (1996) insolubles. . . . . . . . . . . . . . . . . . £0.01%
2. Kominami, H. et al., Appl. Surf. Sci. 113/114, 519 (1997) mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . .75 C (D) (lit.)
R: 11-36/37/38-41 S: 16-26-33-36 Density. . . . . . . . . . . . . . . . . . . . . . . . . . 2.55 g/mL (lit.)
CH
3 Cl-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £5 ppm
3
CH O CHCH
3 NO3- and NO2-. . . . . . . . . . . . . . . . . . . . . . . . £0.005%
CH CH O In Ca. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005%
3
O CHCH
3 Cu. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.002%
CH
3 Fe. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.001%
K. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005%
Na. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.01%
Trademark of Sigma-Aldrich Co.
800.558.9196 (USA)
Iridium Lead(IV) acetate
Manganese
Magnesium methoxide solution Manganese(II) acetate
33,565-7 CAS No. 109-88-6 500 mL
Mg(OCH3)2 FW 58.36 2L
6-10 wt. % in methanol 33,082-5 Manganese(II) acetate 5g
Employed in a sol-gel preparation of nanocrystalline MgO CAS No. 638-38-0 25 g
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
with 1.8-35 nm particle sizes. Chadwick, A.V. et al. Chem. C2H4MnO2 FW 115.0 100 g
Mater. 1998, 10, 864. 98%
Microelectronics
Materials for Thin Films/
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3381 (lit.) R: 20/21/22-36/37/38-40 S: 26-27-36/37/39
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.816 g/mL (lit.) Manganese(II) acetate tetrahydrate
R: 23/24/25-39/23/24/25 S: 36/37-45 (Manganous acetate)
CAS No. 6156-78-1
Magnesium nitrate hexahydrate (CH3COO)2Mn 4H2O FW 245.1
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.589 g/mL (lit.)
CAS No. 13446-18-9 R: 36/37/38 S: 26-36
Mg(NO3)2 6H2O FW 256.4 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R: 8-36/37/38 S: 17-26-36 22,977-6 99.99% 50 g
Mg(NO ) 6H O 500 g
32 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22,100-7 99+% 25 g
mp . . . . . . . . . . . . . . . . . . >300 C (lit.) 500 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kg
52,936-2 99.999+% 5g
solid 25 g Manganese(III) acetate dihydrate
mp . . . . . . . . . . . . . . . . . . . . . 89 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.64 g/mL (lit.) 21,588-0 CAS No. 19513-05-4 5g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . (CH3COO)3Mn 2H2O FW 268.1 25 g
20,369-6 99.995+% 10 g
97% 100 g
Vapor density. . . . . . . . . . . . . . . . 6 (vs air) 50 g
R: 36/37/38 S: 26-36
mp . . . . . . . . . . . . . . . . . . . . . 89 C (lit.)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.636 g/mL (lit.) Manganous acetate See: Manganese(II) acetate Page 358
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
46,789-8 ReagentPlus, 99.99+% 50 g
98.0-102.0% 250 g Molybdenum
total metallic impurities. . . . . . . . <100 ppm
insolubles. . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005%
pH range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5.0-8.2
2,6-Diisopropylphenylimidoneophylidenebis1,1,1,3,3,3-
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 C (dec.) (lit.) hexafluoro-tert-butoxy)molybdenum(VI)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.636 g/mL (lit.)
Cl-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.001% 57,654-9 C30H35F12MoNO2 FW 765.5 100 mg
PO43-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £5 ppm CH
3 500 mg
SO42-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005% CH CF
CH CH
3 2g
3 3
Ba. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005% C
Ca. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.01% CF
3 O N
CHCH
Fe. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £5 ppm Mo 3
CF O CH CH
K. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005% 3 3
C CH C CH
Mn. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £5 ppm CH CF
3 3
3 3
NH4+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.003%
Na. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005%
Sr. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . £0.005%
Trademark of Sigma-Aldrich Co.
359
Sol-Gel Precursors
Molybdenum
Microelectronics
Materials for Thin Films/
bp. . . . . . . . . . . . . . . . . . . . . 140-142 C/0.1 mm Hg (lit.)
32,580-5 CAS No. 16648-22-9 50 g mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 C (lit.)
99.9% 250 g Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 F
R: 36/37/38 S: 26-37/39 Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.268 g/mL (lit.)
R: 10-34 S: 26-36/37/39-45
Neodymium(III) isopropoxide (CH CH O) Nb
3 2 5
800.558.9196 (USA)
CH
3 O CHCH
3
CH CH O Nd
3
O CHCH
CAS No. 3375-31-3
3
CH (CH3COO)2Pd FW 224.5
3
R: 41 S: 26-39
O
CH C O
3 2Pd
Nickel
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acetic acid nickel(II) salt See: Nickel(II) acetate Page 359
37,987-5 99.98% 1g
2-ethylhexanoic acid nickel(II) salt See: Nickel(II) 2-ethylhexanoate
Ordering/Pricing: www.sigma-aldrich.com
5g
Page 359 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
52,076-4 Engelhard code S3107, 99.9+% 1g
Nickel(II) acetate tetrahydrate solid 5g
25 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Acetic acid nickel(II) salt)
20,586-9 98% 1g
CAS No. 6018-89-9
2g
Ni(OCOCH3)2 4H2O FW 248.8
10 g
Used in synthesis of polynuclear-nickel polyoxotungstate cluster
250 g
compounds that are ideal for the design of molecular magnets.
1 kg
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.798 g/mL (lit.)
R: 45-22-43 S: 53-36/37-45
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Palladium(II) trifluoroacetate
37,988-3 99.998% 10 g
50 g 29,968-5 (Trifluoroacetic acid palladium(II) salt) 1g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CAS No. 42196-31-6 5g
24,406-6 98% 5g (CF3COO)2Pd FW 332.5
100 g R: 36/37/38 S: 26-37/39
500 g
360
Sol-Gel Precursors
Palladium
3
CH
3
C OK Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.845 g/mL (lit.)
CH
3
R: 10-20/21/22-36/37/38 S: 16-26-28-36/37/39
CH
3
CH CH CH OK
3 2
Rubidium acetate
Rhenium (acetic acid rubidium salt)
CAS No. 563-67-7
Microelectronics
Materials for Thin Films/
[Rh(CH3COO)2]2 2H2O FW 478.0 51,111-0 CAS No. 308847-84-9 1g
solid
O
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290 C (D) (lit.)
R: 36/37/38 S: 26-36
CH C O 2 Rh
3
2
Samarium
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
48,228-5 99.99+% 250 mg Samarium(III) acetate hydrate
solid 1g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 32,587-2 CAS No. 100587-91-5 25 g
20,905-8 powder 50 mg 99.9% 100 g
250 mg
800.558.9196 (USA)
1g Samarium(III) isopropoxide
R: 34-37 S: 13-36/37/39-45
Silicon
Sodium silicate solution
1,2-Bis(triethoxysilyl)ethane See: Tri-Alkoxy & Greater Silanes Page
228
33,844-3 (Water glass; Sodium trisilicate solution) 25 mL
CAS No. 1344-09-8 1L
Calcium silicate Na2Si3O7 FW 242.2 3L
Employed in preparation of NaZnSiO3OH,
37,266-8 CAS No. 1344-95-2 50 g a novel chiral framework material which has potential
CaO3Si FW 116.2 250 g application in ion exchange, adsorption and catalysis.
-200 mesh, 99% Healey, A.M. et al. Inorg. Chem. 1999, 38, 455.
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . 2.9 g/mL (lit.)
SiO2 27%
R: 36/37 S: 22-26-37/39
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.39 g/mL (lit.)
R: 35 S: 26-37/39-45
Cesium aluminum orthosilicate
Tetrabutyl orthosilicate
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
Lithium orthosilicate
49,536-0 CAS No. 13453-84-4 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
33,385-9 99.999% (Purity based on metals 25 mL
Li4O4Si FW 119.8 500 g
analysis) 100 mL
solid
Vapor density. . . . . . . . . . . . . 7.2 (vs air)
363
Sol-Gel Precursors
Silicon
Microelectronics
Materials for Thin Films/
CH
(Tetramethoxysilane) 3
CH C CH
CAS No. 681-84-5 3 3
CH O
3
Si(CH3)4 FW 152.2 CH C O Si OH
3
Used in the sol-gel synthesis of chromium-doped silicates and in CH O
3
the formation of hexagonal mesoporous silica layers. CH C CH
3 3
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.368 (lit.) CH
3
bp. . . . . . . . . . . . . . . . . . . . . . . . 121-122 C/760 mm Hg (lit.)
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4 C (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .84 F
References
1. Klotz, M. et al., J. Mater. Chem. 10, 663 (2000)
2. Devi, P.S. et al., CHem. Mater. 12, 1378 (2000)
R: 10-26-37/38-41 S: 16-26-36/37/39-45
800.558.9196 (USA)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
34,143-6 99+% 25 g
100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
21,847-2 98% 5g
Easily hydrolyzed. May cause blindness! 100 g
Vapor density. . . . . . . . . . . . . 5.25 (vs air) 500 g
Vapor pressure. . . . . . . . . .3.35 psi ( 20 C)
Vapor pressure. . . . . . . . . . . . . . . . . . . . 5.31 psi ( 55 C)
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.023 g/mL (lit.)
Ordering/Pricing: www.sigma-aldrich.com
Tetramethyl-d12 orthosilicate
39,339-8 CAS No. 80396-70-9 1g
Si(OCD3)4 FW 164.3 5g
99 atom % D
Easily hydrolyzed.
May cause blindness!
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.366 (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.114 g/mL (lit.)
R: 10-23-34 S: 16-26-36/37/39-45
OCD
3 1
CD O Si OCD H-NMR spectrum of Aldrich product 55,346-8 lot 92720HA
3 3
OCD
3
364
Sol-Gel Precursors
Silicon
Silver benzoate
Sodium tert-butoxide
22,727-7 CAS No. 532-31-0 10 g
C7H6AgO2 FW 230.0 50 g 35,927-0 CAS No. 865-48-5 5g
99% NaO(CH3)3 FW 96.10 100 g
97% 500 g
Silver trifluoroacetate R: 11-14-34-37 S: 26-36/37/39-43-45-7/8
23,055-3 Sodium ethoxide solution 5 mL 40,306-7 0.5 M in methanol, A.C.S. reagent, 100 mL
NaOC2H5 FW 68.05 100 mL 0.48-0.52 M (25.9-28.1 g/L) 800 mL
21 wt. % in denatured ethyl alcohol 500 mL Packaged under nitrogen in Sure/Seal
Chemical darkens on storage without bottles
change in quality A novel high-spin hexanuclear Mn(III) cluster,
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.385 (lit.) [NaMn6(OMe)12(dbm)6]+, was synthesized via MnCl2
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 F oxidation with simultaneous NaOMe promoted
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.868 g/mL (lit.) aggregation. This cluster has an unprecedented cyclic
R: 11-14-34 S: 16-26-36/37/39-43-45
CH CH ONa
structure and 24 unpaired electrons in its ground state.
3 2
Abbati, G.L. et al. Inorg. Chem. 1998, 37, 1430.
ACS reagent
clarity of soln. . . . . . . . . . . . . . . . . . . . . . . . . . . to pass
bp. . . . . . . . . . . . . . . . . . . . . . . 64.6 C/760 mm Hg (lit.)
Sodium 2-ethylhexanoate Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.809 g/mL (lit.)
51,169-2 CAS No. 19766-89-3 1 kg R: 11-14-23/24/25-34-39/23/24/25 S: 7-16-36/37-45
C8H15NaO2 FW 166.2
Microelectronics
Materials for Thin Films/
Sodium methanethiolate
Sodium phenoxide trihydrate
28,101-8 (Methanethiol sodium salt) 1g
31,819-1 (sodium phenolate) 5g
CAS No. 5188-07-8 5g
CAS No. 156150-40-2 100 g
CH3SNa FW 70.09 25 g
NaOC6H5 3H2O FW 170.1 500 g
95%
R: 29-34 S: 26-36/37/39-45
99%
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61-64 C (lit.)
R: 34 S: 26-27-28-36/37/39-45
Sodium methoxide
ONa
3H O
2
(Sodium methylate)
CAS No. 124-41-4
16,499-2 Sodium methoxide 5g
800.558.9196 (USA)
NaOCH3 FW 54.02 100 g
95%, powder 500 g
A novel high-spin hexanuclear Mn(III) 2 kg
Strontium
cluster, [NaMn6(OMe)12(dbm)6]+, was
Strontium acetate hydrate
synthesized via MnCl2 oxidation with simultaneous
NaOMe promoted aggregation. This cluster has an CAS No. 543-94-2
unprecedented cyclic structure and 24 unpaired electrons (CH3COO)2Sr aq FW 205.7
in its ground state. Abbati, G.L. et al. Inorg. Chem. 1998,
37, 1430. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Vapor density. . . . . . . . . . . . . . . . . . . . . . . . . 1.1 (vs air) 43,788-3 99.995% 1g Ordering/Pricing: www.sigma-aldrich.com
Vapor pressure. . . . . . . . . . . . . . . . . . .50 mm Hg ( 20 C) Precursor to promising candidate materials 5g
Vapor pressure. . . . . . . . . . . . . . . . . . .96 mm Hg ( 25 C) for superconductor wire. Lee, B.I. et al.
R: 11-14-34 S: 8-16-26-43-45 Physica C 1994, 226, 377.
water. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ~4%
Sodium methoxide solution . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CH3ONa FW 54.02 38,854-8 water. . . . . . . . . . . . . . . . . . . . . . ~3% 100 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 g
15,625-6 25 wt. % in methanol 25 mL
Vapor density. . . . . . . . . . . . . . 1.1 (vs air) 1 L Strontium isopropoxide
Vapor pressure. . . . . . . .50 mm Hg ( 20 C) 2 L
Vapor pressure. . . . . . . .96 mm Hg ( 25 C) 18 L 44,069-8 CAS No. 88863-33-6 5g
n20
D . . . . . . . . . . . . . . . . . . . . . 1.37 (lit.)
Sr(OCH(CH3)2)2 FW 205.8 25 g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 F 99.9%
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.945 g/mL (lit.) R: 34 S: 16-26-36/37/39
R: 11-14-23/24/25-34-39/23/24/25 S: 16-26-36/37/39-43-45-7/ CH CH O
3
Sr O CHCH
3
8 CH
3
CH
3
366
Sol-Gel Precursors
Tantalum
Thallium(III) trifluoroacetate
www.sigma-aldrich.com/safc
Sn(CH3CO2)2 FW 236.8 25 g
Tantalum(V) methoxide
Microelectronics
Materials for Thin Films/
References
Tributyltin methoxide
1. Caruso, J. et al., Inorg. Chem. 34, 449 (1995)
2. Lu, G. et al., Langmuir 14, 1532 (1998)
22,924-5 CAS No. 1067-52-3 25 g
3. Caruso, J., J. Chem. Soc., Chem. Commun. 157 (1995)
R: 20/21/22-36/37/38 S: 26-36 (C4H9)3SnOCH3 FW 321.1 100 g
CH
97%
3
CH C CH 100g units packaged under nitrogen in Sure/Seal
3 3
CH
3
O CH
3
bottles.
CH
3
C O Sn O C CH
3
For a review on tin reagents in organic synthesis, see
CH
3
O CH
3
Aldrichimica Acta 1984, 17, 75.
CH
3
C CH
3
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.472 (lit.)
CH
3
bp. . . . . . . . . . . . . . . . . . . . 97-97.5 C/0.06 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.115 g/mL (lit.)
R: 21-25-36/38-48/23/25-50/53 S: 35-36/37/39-45-60-61
CH CH CH CH
3 2 2 2
Tin(II) 2-ethylhexanoate CH CH CH CH Sn OCH
3 2 2 2 3
Microelectronics
Materials for Thin Films/
liquid
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.47 (lit.)
bp. . . . . . . . . . . . . . . . . . . . 176-183 C/760 mm Hg (lit.)
Tin(II) oxalate Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 g/mL (lit.)
40,276-1 (Stannous oxalate; Oxalic acid tin salt) 100 g R: 20/22 S: 28
CAS No. 814-94-8 500 g
SnC2O4 FW 206.7 Chlorotriisopropoxytitanium
98%
R: 21/22 S: 24/25 CAS No. 20717-86-6
Packaged under nitrogen in Sure/Seal bottles
Tributyltin ethoxide
800.558.9196 (USA)
25,151-8 CAS No. 36253-76-6 25 g 25,062-7 Chlorotriisopropoxytitanium 100 g
(C4H9)3SnOC2H5 FW 335.1 100 g (Titanium chloride triisopropoxide; 800 g
97% Chlorotitanium triisopropoxide)
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.467 (lit.)
[(CH3)2CHO]3TiCl FW 260.6
bp. . . . . . . . . . . . . . . . . . . . . . . . 92 C/0.1 mm Hg (lit.) 95%
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 F Storage below 25 C may cause crystallization. Moving
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.098 g/mL (lit.) container to a warm location should remelt the solid (mp
R: 21-25-36/38-48/23/25-50/53 S: 35-36/37/39-45-60-61 ~35 C). Recrystallization occurs slowly. Thus, the liquid
CH CH CH CH
3 2 2 2 may be transferred using syringe techniques.
CH CH CH CH Sn OCH CH
3 2 2 2 2 3 Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 F
CH CH CH CH Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.091 g/mL (lit.)
Ordering/Pricing: www.sigma-aldrich.com
3 2 2 2
R: 34 S: 26-36/37/39-45
CH CH
2 3
Microelectronics
Materials for Thin Films/
CH CH O CH CHCH CH CH CH
46,255-1 (Tetra-tert-butyl orthotitanate) 25 mL 2 3 2 2 2 2 3
CH CH CH CH CH CH O Ti O CH CHCH CH CH CH
CAS No. 3087-39-6 50 mL 3 2 2 2 2 2 2 2 2 3
CH CH CH CH CH CH O CH CH
Ti[OC(CH3)3]4 FW 340.3 3 2 2 2 2 2 3
CH CH
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 F 2 3
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.881 g/mL (lit.)
R: 10-36/37/38 S: 16-26-36
CH
3
CH
3
C CH
3 Titanium(IV) isopropoxide
CH O CH
3 3
CH
3
C O Ti O C CH
3 (TYZOR TPT organic titanate; Tetraisopropyl orthotitanate)
CH
3
O CH
3 CAS No. 546-68-9
CH C CH
3 3 Ti(OCH(CH3)2)4 FW 284.2
CH
3 Novel metal oxide/phosphonate hybrids were formed from
titanium(IV) isopropoxide in a two-step sol-gel process. Starting
material for barium-strontium-titanate thin films., Used to
make porous titanosilicates, potential ion-exchange materials
Titanium(IV) butoxide, polymer for cleanup of radioactive wastes. Applied in the formation of a
heterosupermolecule consisting of a TiO2 nanocrystallite-
51,071-8 CAS No. 9022-96-2 50 mL viologen electron acceptor complexwhose light-induced
Ti(OC4H9)4 FW 340.3 250 mL electron transfer has been demonstrated.
Used in the study of thermal properties n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.464 (lit.)
of siloxane coating KT-30 produced in varying methods., bp. . . . . . . . . . . . . . . . . . . . . . . . . . . 232 C/760 mm Hg (lit.)
liquid mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-20 C (lit.)
Vapor pressure. . . . . . . . . . . . . . . . . <0.8 mm Hg ( 20 C) Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .72 F
mp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -39 C (lit.) References
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 F 1. Guerrero, G., Chem. Mater. 12, 1268 (2000)
Density. . . . . . . . . . . . . . . . . . . . . . . . . . 1.13 g/mL (lit.) 2. Behrens, E.A. et al., Chem. Mater. 8, 1236 (1996)
References 3. Guerrero, G. et al., Chem. Mater. 12, 1268 (2000)
Zin, I.M. et al., Fa-Khim. Mehk. Mater. 31, 136 (1995) 4. Jans, S-I. et al., Han’guk Chaelyo Hakhoechi 6, 449 (1996)
R: 10-22-37/38-41-67 S: 16-26-36/39 5. Cusak, L. et al., Chem Mater. 9, 1765 (1997)
R: 10-36 S: 16-26-36/37/39
OCH CH CH CH
2 2 2 3
CH
CH CH CH CH O Ti OCH CH CH CH 3
3 2 2 2 2 2 2 3
CH O CHCH
OCH CH CH CH 3 3
2 2 2 3
n CH C H O Ti O CHCH
3 3
CH CH O CH
3 3
CH
3
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
37,799-6 99.999% 5 mL
Density. . . . . . . . . . . . . 0.963 g/mL (lit.) 25 mL
100 mL
369
Sol-Gel Precursors
Titanium
Microelectronics
Materials for Thin Films/
as well as uses in catalysis. Jiang, F. et al. Inorg. Chem.
Titanium(IV) propoxide 1998, 37, 5439.
liquid
25,308-1 (Tetrapropyl orthotitanate) 100 g bp. . . . . . . . . . . . . . . . . . . . 125-128 C/760 mm Hg (lit.)
CAS No. 3087-37-4 500 g Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 F
Ti(OCH(CH3)2)4 FW 284.2 Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.139 g/mL (lit.)
98% R: 36/37/38 S: 26-36
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4986 (lit.)
O
bp. . . . . . . . . . . . . . . . . . . . . . . . . 170 C/3 mm Hg (lit.) CH CH O
3 2
V OCH CH
2 3
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 F OCH CH
2 3
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.033 g/mL (lit.)
R: 10-36/37/38 S: 26-36/37/39
OCH CH CH
2 2 3
800.558.9196 (USA)
CH CH CH O Ti OCH CH CH
3 2 2 2 2 3
OCH CH CH
Vanadium(V) oxytriisopropoxide
2 2 3
4
O CH O Ti
2
4
370
Sol-Gel Precursors
Vanadium
Hayachi, K., Proc. Electrochem. Soc. 97, 700 (1998) Hayashi, K. et al., Proc. Electrochem. Soc. 97, 700 (1998)
R: 10-36/37/38 S: 16-26-36 R: 23/24/25 S: 16-26-28-36/37/39-45
O
OCH CH CH CH
2 2 2 3
CH CH CH O V OCH CH CH
3 2 2 2 2 3 Y
OCH CH CH CH CH CH CH O OCH CH CH CH
2 2 3 3 2 2 2 2 2 2 3
Yttrium 2-ethylhexanoate
Ytterbium
34,708-6 CAS No. 114012-65-6 10 g
Ytterbium(III) acetate tetrahydrate C8H16O2Y FW 233.1 50 g
99.9%
CAS No. 15280-58-7 R: 36/37/38 S: 26-37/39
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Competitive Quotes on Larger Quantities/Custom Synthesis: Sigma-Aldrich Fine Chemicals
32,601-1 99.9% 10 g
Yttrium(III) isopropoxide solution
Microelectronics
Materials for Thin Films/
50 g
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
54,497-3 solid 5g 38,029-6 CAS No. 2172-12-5 5 mL
25 g Y(OCH(CH3)2)3 FW 266.2 25 mL
25 wt. % in toluene
Ytterbium(III) isopropoxide bp. . . . . . . . . . . . . . . . . . . . . . . 106 C/760 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.955 g/mL (lit.)
51,406-3 CAS No. 6742-69-4 5g
R: 11-23/24/25-34 S: 16-26-36-36/37/39-45
C9H21O3Yb FW 350.3 CH
99.9% 3
OCHCH
Packaged in ampules 3
CH C H O Y O CHCH
mp . . . . . . . . . . . . . . . . . . . . . . . . . . 349 C (dec.) (lit.) 3 3
CH CH
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210 F 3 3
R: 11-34 S: 16-26-36/37/39-45
CH
3
O CHCH
3
CH C H O Yb O CHCH Yttrium isopropoxide oxide
3 3
CH CH
3 3
37,942-5 CAS No. 118458-20-1 5g
OY(OCH(CH3)2)5 FW 1132 25 g
Fp. . . . . . . . . . . . . . . . . . . . . . . . . 54 F
R: 34 S: 26-27-36/37/39-45
Yttrium Yttrium trifluoroacetate hydrate
Yttrium acetate hydrate 39,536-6 CAS No. 304851-95-4 5g
99% 25 g
R: 36/37/38 S: 26-36
R: 36/37/38 S: 26-36
54,190-7 Yttrium acetate 5g
99.99+% 25 g
solid
Zirocnium
Microelectronics
Materials for Thin Films/
have potential for the generation of hybrid zirconium-
C C CH C OCH CH
2 2 3 containing polymers.
O CH C OCH CH
2 2 3 bp. . . . . . . . . . . . . . . . . . . . . . . . . 235 C/5 mm Hg (lit.)
O
R: 11-36/37/38 S: 16-26-33-36/37/39
OCH CH
2 3
CH CH O Zr OCH CH
3 2 2 3
OCH CH
2 3
Zirconium(IV) tert-butoxide
(Tetra-tert-butyl zirconate)
CAS No. 2081-12-1
Zr[OC(CH3)3]4 FW 335.7 Zirconium(IV) isopropoxide isopropanol complex
bp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 C/3 mm Hg
nD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4240 33,923-7 CAS No. 14717-56-7 10 g
800.558.9196 (USA)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 F Zr(OCH(CH3)2)4 (CH3)2CHOH FW 387.7 50 g
Density. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.985 g/mL 99.9%
R: 36/37/38 S: 26-36 Convenient precursor for the synthesis of olefin-
OC(CH )
33 functionalized zirconium-containing monomers, which
(CH ) CO Zr OC(CH )
33 33 have potential for the generation of hybrid zirconium-
OC(CH )
33 containing polymers.
R: 36/37/38 S: 26-37/39
CH
3
. . . . . . . . . . . . . . . . . . . . . . . . . . . . CH O CHCH
3
3
56,003-0 electronic grade, 99.999% 5g CH C H O Zr O CHCH
3 3
CH C H OH
3
25 g
Ordering/Pricing: www.sigma-aldrich.com
CH C H O CH CH
3 3
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
CH
3
33,708-0 98% 5g
May darken in storage! 25 g
Reagent for the preparation of
heterometallic tin(II) or lead(II) zirconium alkoxides. Teff,
D.J. et al. Inorg. Chem. 1996, 35, 2981. Zirconium(IV) propoxide solution
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.424 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . . . .81 C/3 mm Hg (lit.) 33,397-2 (Tetrapropyl zirconate) 100 mL
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 F CAS No. 23519-77-9 500 mL
Density. . . . . . . . . . . . . . . . . . . . . . . . . 0.985 g/mL (lit.) Zr(OCH(CH3)2)4 FW 327.6
70 wt. % in 1-propanol
n20
D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.451 (lit.)
bp. . . . . . . . . . . . . . . . . . . . . . . .208 C/0.1 mm Hg (lit.)
Fp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 F
Density. . . . . . . . . . . . . . . . . . . . . . . . . 1.044 g/mL (lit.)
R: 10-41-67 S: 26-39
OCH CH CH
2 2 3
CH CH CH O Zr OCH CH CH
3 2 2 2 2 3
OCH CH CH
2 2 3
372
Sol-Gel Precursors
Zirocnium
Zirconium silicate
38,328-7 CAS No. 10101-52-7 250 g
ZrSiO4 FW 183.3 1 kg
-325 mesh
R: 36/37/38 S: 26-36
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