TOSHIBA 28)74 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 28374 LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm ¢ Recommended for first stages of EQ Amplifiers and M.C. Head a Amplifiers. | © High [Yq oa = : [Wqd=22mS (Typ.) (Vpg=-10V. Vas=0. Ings=—8mA) oss WY gl 2 Low Noise + By—0.05aV//He (Typ.) 8 5 (Vpg=-10V. Ip=-1mA, f=1kHz) . @ High Input Impedance .OnA (Max.) (Vag=25V) a © Complimentary to 28K170 5 t z 725) 2 MAXIMUM RATINGS (Ta = 25°C) 4. DRAIN. CHARACTERISTIC syMmnor | RATING | UNIT 2 SATE Gate-Drain Voltage Vos 2 | v_|iepno 70-82 Gate Current Ig =10 | ma [eras Sc43 Drain Power Dissipation Pp 400 | mw |lrosmma 2-sFiD Tanction Temperature Ty 125_| °C | Weignt: 021g Storage Temperature Range Tete —55~125 | *C ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP, [MAX |UNIT| Gate Cut-off Current Toss _| Vos=25V, Vps=0 — |= [10] aa Gate-Drain Breakdown Voltage |V (BR) GDS|_VDS=0, 1G = 100A | —[—|v i Ipss Vps= = Drain Curren! =- = 26] — | -20| ma Current (B88. | vps=—10V, Vas=0 26 20 Gate-Source Cut-off Voltage | Vas (orm) — | 20] v Forward Transfer Admittance | |Yssl 22| — | ms Tnput Capacitance Ciss 105 | — | oF Reverse Transfer Capacitance | Crsg 32| — | pF NFQ) 10] 10 Noise Figure B NG(2) os} 2 Note : Ipgg Classification GR: —26~—6.5mA, BL: -6.0~-12mA, V:-10~-20mA sciess2 © TOHImA « conmmaly wong fo mprove fhe Guill) ond te relabiny of Wy produce, Nevanhaen_ semconducc, dances Ty general cn wai fs radi ipcmene “anda of ‘sey, sedge Situations ine maint fier Fos rode eats Sparating ranger at tat forth in the Bont recone products specthetions: Ao Bleae Kegp i mind the precautions and condivone ee¢ for i the TOSitaeSemiendue: Relay Handbook 7997-04-10 14TOSHIBA STATIC. CHARACTERISTICS (coMNON SOURCE Tanto 28374 Ip - Vpg_(LOW VOLTAGE REGION? i i 02 T os os te a Fe Qo ce setae ATE-SOURCE DRAIN SOURCE VOLTAGE DRAINSOURCE VOLTAGE Vos «) voutaai Ves.) vos I = Vos Nel - to 0 oo cosnon source . ¥og=—109 ai df eg a tpss- ena 5 at pf y+ & * as Oe ‘CoMNoN souRCR SV Li. E W Yos==100 sth tease | Tae GATESOURCE VOLTAGE. Vos @) DDANIN CURRENT pm) r \¥ed — Iss Vas (Orr) - Iss $7 conmos sounce 8 comios sounce z oss 5g oss 2) 5. a. | Me Ee Vesiore): Vos ge Ee Fol mene se | Fs Le ge E+ 3 Zo 4 2 | i — E 6 ‘ 3 =10 =30 8T ~s =10 =30 DRAIN CURRENT Ings mA) DRAIN CURRENT Ings mA) EDReORATION tor any intngemens of mle! brapery or ne als Spiinaieton or oft Waar ay intalatt pope be oes nak 1@ The'mrmavon cranes herein net to change whos note Orie Repay, arogs eens Awenies ayy as,8 goss lor We sopleatons ol ou proaucs_ Na lemably ames by TOSMan ris i pats ay te om ts eho Tee's oe 7997-04-10 2/4TOSHIBA INPUT CAPAGITANCE ing (99 We VOLTAGE QUIVALENE INPUT Eg a a £ Ciss = Vos ‘COMMON SOURCE DRAIN-SOURCE VOLTAGE Vs. (W) Bp - ID ‘counoN SOURCE ests DRAIN CURRENT Ip oa) NF -In REVERSE TRANSHER CAPACITANCE CGATE EXCESS CURRENT losx (A) 28374 Crss = Von. [counon source. GATE-DRAIN VOLTAGE Ven «> Jasx ~ Vos counon source er i DRAIN-SOURCE VOLTAGE. Vs () NF ~ Vos [counow source] pg -10V ig 10) a [eownow source & & DRAIN CURRENT Ip «e) DRAINSOURCE VOLTAGE Vos. (W) 7997-04-10 3/4TOSHIBA 28)74 NF - Re comuow sounce comwox source Nose 100 \ose-10¥ Ipe-ima a g a g & =f suf If oT Pol MN A i Lui I a a or SIONAL SOURCE RESISTANCE. Rg (2h maquexcy ¢ «iy 7997-04-10 474