_KEC SEMICONDUCTOR KTB1424 KOREA ELECTRONICS €0,LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSIS GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES + High DC Current Gain + fre + Complementary to KTD2424. DO(Min.) (Vee=-2V, k= I" : MAXIMUM RATINGS (Ta-25t moe AN i cuaracteristic | sympot | RatiNG | UNIT Ws | sre H Collector-Base Voltage Vow | -2 |v to Lead Collector-Emitter Voltage Ver ~~ |v st = Emitter-Base Voltage View w |v op Collector Current k 3 | A Sucre Base Current Ih os | A Caer Power Dissipation |p V TO-22018 Junetion Temperature v wo | Storage Temperature Range | Tas 50] ELECTRICAL CHARACTERISTICS (Ta=25°0) CHARACTERISTIC SYMBOL vest CONDITION | MIN. | TYP. | MAX. | UNIT Collector Cut-off Current eno | Var-80V, bo oo | aa Emitter Cut-off Current ee ee 100 | wa Collector-Emitter Breakdown Voltage | Vawwero | k=-10mA, k=O bl) | Ver-2V, eta 000 DC Current Gain tir) | Vene=2V, le=-3A 1000 Collector-Emitter | Vern 1u=-30mA 15 Saturation y Voltage Base-Emitter Vinssa | e=-3A, lie-S0mA 28 1997, 4 02 Revision No =1 KEC “i