MJ15022 (NPN),

MJ15024 (NPN)

Silicon Power Transistors

The MJ15022 and MJ15024 are power transistors designed for high
power audio, disk head positioners and other linear applications.

Features http://onsemi.com
• High Safe Operating Area
• High DC Current Gain 16 AMPERES
• These Devices are Pb−Free and are RoHS Compliant* SILICON POWER TRANSISTORS
• Complementary to MJ15023 (PNP), MJ15025 (PNP) 200 − 250 VOLTS, 250 WATTS

SCHEMATIC
MAXIMUM RATINGS CASE
Rating Symbol Value Unit 3

Collector−Emitter Voltage VCEO Vdc

MJ15022 200 1
MJ15024 250
BASE
Collector−Base Voltage VCBO Vdc
MJ15022 350
2
MJ15024 400
EMITTER
Emitter−Base Voltage VEBO 5 Vdc
Collector−Emitter Voltage VCEX 400 Vdc
Collector Current − Continuous IC 16 Adc 3

Collector Current − Peak (Note 1) ICM 30 Adc

Base Current − Continuous IB 5 Adc 2
1
Total Device Dissipation @ TC = 25_C PD 250 W
Derate above 25_C 1.43 W/_C TO−204AA (TO−3)
CASE 1−07
Operating and Storage Junction TJ, Tstg −65 to +200 _C STYLE 1
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended MARKING DIAGRAM
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. MJ1502x = Device Code
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
x = 2 or 4
G = Pb−Free Package
THERMAL CHARACTERISTICS MJ1502xG
AYWW A = Assembly Location
Characteristics Symbol Max Unit MEX Y = Year
WW = Work Week
Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W MEX = Country of Origin

ORDERING INFORMATION
Device Package Shipping

MJ15022G TO−204 100 Units / Tray

(Pb−Free)

MJ15024G TO−204 100 Units / Tray

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

August, 2013 − Rev. 12 MJ15022/D
 MJ15022 (NPN), MJ15024 (NPN)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 100 mAdc, IB = 0) MJ15022 200 −
MJ15024

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
250 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEX mAdc
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15022 − 250

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15024 − 250

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 150 Vdc, IB = 0) MJ15022 − 500
(VCE = 200 vdc, IB = 0) MJ15024 − 500

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO − 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 5 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 50 Vdc, t = 0.5 s (non−repetitive)) 5 −
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE −
(IC = 8 Adc, VCE = 4 Vdc) 15 60

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 16 Adc, VCE = 4 Vdc) 5 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 8 Adc, IB = 0.8 Adc) − 1.4
(IC = 16 Adc, IB = 3.2 Adc) − 4.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VBE(on) − 2.2 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product fT 4 − MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob − 500 pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

100 There are two limitations on the powerhandling ability of

50 a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)

TC = 25°C breakdown. Safe operating area curves indicate IC − VCE

20
limits of the transistor that must be observed for reliable
10 operation; i.e., the transistor must not be subjected to greater
5.0 dissipation than the curves indicate.
BONDING WIRE LIMITED The data of Figure 1 is based on TJ(pk) = 200_C; TC is
THERMAL LIMITATION variable depending on conditions. At high case
1.0 (SINGLE PULSE) temperatures, thermal limitations will reduce the power that
SECOND BREAKDOWN can be handled to values Ion than the limitations imposed by
LIMITED
second breakdown.
0.2
0.1
0.1 0.2 0.5 10 20 50 100 250 500 1k
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area

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2
 MJ15022 (NPN), MJ15024 (NPN)

TYPICAL CHARACTERISTICS

f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

4000
3000 TJ = 25°C
Cib 9 TJ = 25°C
8 VCE = 10 V
fTest = 1 MHz
C, CAPACITANCE (pF)

1000 7
6
500
5

Cob 4
3
100 2
1
40 0
0.3 0.5 1 5.0 10 30 50 100 300 0.1 0.3 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS)

Figure 2. Capacitances Figure 3. Current−Gain — Bandwidth Product

200
TJ = 100°C VCE = 4 V
100 1.8

TJ = 25°C
hFE , DC CURRENT GAIN

50
V, VOLTAGE (VOLTS)

1.4

20
1.0
10 VBE(on) @ VCE = 4 V
0.8 TJ = 25°C

5.0 100°C
VCE(sat) @ IC/IB = 10
0.2 25°C
1.0 100°C
0
0.2 0.5 1.0 2.0 5.0 10 20 0.15 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain Figure 5. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.8 TJ = 25°C

1.4

1.0

16 A
0.6 8A
IC = 4 A
0.2
0
0.03 0.1 0.2 0.5 1.0 2.0 5.0 10 30
IB, BASE CURRENT (AMPS)

Figure 6. Collector Saturation Region

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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z DATE 05/18/1988

SCALE 1:1

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U
L −Y− E 0.055 0.070 1.40 1.77
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77

0.13 (0.005) M T Y M

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. BASE PIN 1. BASE PIN 1. GATE PIN 1. GROUND PIN 1. CATHODE
2. EMITTER 2. COLLECTOR 2. SOURCE 2. INPUT 2. EXTERNAL TRIP/DELAY
CASE: COLLECTOR CASE: EMITTER CASE: DRAIN CASE: OUTPUT CASE: ANODE

STYLE 6: STYLE 7: STYLE 8: STYLE 9:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE #1 PIN 1. ANODE #1
2. EMITTER 2. OPEN 2. CATHODE #2 2. ANODE #2
CASE: COLLECTOR CASE: CATHODE CASE: ANODE CASE: CATHODE

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

© Semiconductor Components Industries, LLC, 2000 1 Case Outline Number:

January, 2000 − Rev. 07Z 1
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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