Park Atomic Force Microscopy

Application note #18

www.parksystems.com

Hosung Seo, Dan Goo, and Gordon Jung

Park Systems Corp., Suwon, Korea

How to obtain sample potential data

for KPFM measurement

INTRODUCTION
Fundamentals of KPFM
Kelvin Probe Force Microscopy, or KPFM, was introduced as a tool
to measure the local contact potential difference between a
conducting atomic force microscopy (AFM) tip and the sample,
thereby mapping the work function or surface potential of the
sample with high spatial resolution. Since its first introduction by
Nonnenmacher [1], KPFM has been used extensively as a unique
method to characterize the nanoscale electrical properties of metal
or semiconductor surfaces and semiconductor devices. Recently, + ++ - --
KPFM has also been used to study the electrical properties of
organic materials, devices [2–4], and biological materials. To The KPFM measures Contact Potential Difference (CPD) between a
eliminate any confusion, let us look into KPFM’s synonyms for this conducting AFM tip and a sample. The CPD (VCPD) between the tip and
technique: sample is defined as:

• KPFM: Kelvin Probe Force Microscopy
• SKPM: Scanning Kelvin Probe Microscopy
• SSPM: Scanning Surface Potential Microscopy
• SKFM: Scanning Kelvin Force Microscopy
• SPM: Surface Potential Microscopy
• SP-AFM: Surface Potential Atomic Force Microscopy
KPFM will be used in this document, as it is the most widely used
descriptor for this technique. The term ’Kelvin force’ refers to
similarities between this microscopic technique and the macroscopic
technique, which is the Kelvin probe method. However, the
methodology is somewhat different, but the measured value is
equivalent for both techniques. For clarity, this note will refer only
to the microscopic technique KPFM.
tip  ϕsample
VCPD  (2.1)
e
where ϕsample and ϕtip are the work functions of the sample and tip,
and e is the electronic charge. The different Fermi energy levels
between the AFM tip and sample surface causes an electrical force as
the AFM tip is brought close to the sample surface. Figure 1 shows the
energy level diagram of the tip and sample surface where ϕsample and
ϕtip are different. Figure 1(a) depicts the energy levels of the tip and
sample surface when separated tip and sample surface are close
enough for electron tunneling, equilibrium of the states require Fermi
levels to line-up at steady state. Upon electrical contact, the Fermi levels
will align through electron current flow, and the system will reach to an
equilibrium state as shown in Figure 1(b).

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The tip and sample surface will be charged, and an apparent VCPD will
be formed (note, the Fermi energy levels are aligned but the vacuum
energy levels are no longer the same, and a VCPD between the tip and
sample has been formed). An electrical force acts on the contact area,
due to the VCPD. As shown in Figure 1(c), this force can be nullified. This
technique is the Kevin Probe method that relies on the detection of an
electric field between a sample material and probe material. The electric
field can be varied by the voltage VCPD, that is applied to the sample
relative to the probe. If an applied external bias (VDC) has the same
magnitude as the VCPD with opposite direction, the applied voltage
eliminates the surface charge in the contact area.
The applied VCPD nullifies the electrical force and has the same value as
the work function difference between the tip and the sample. This
allows the work function of the sample to be calculated when the work
function of the tip is known.
Figure 1. Electronic energy levels of the sample and AFM tip for three
cases: (a) tip and sample are separated by distance d with no electrical
contact, (b) tip and sample are in electrical contact, and (c) external bias
(VDC) is applied between tip and sample to nullify the CPD and,
therefore, the tip–sample electrical force. Ev is the vacuum energy level.
Efs and Eft are Fermi energy levels of the sample and tip, respectively.
By applying an AC voltage (VAC) plus a DC voltage (VDC) to the AFM
tip, KPFM measures the work function of the sample. VAC generates the
oscillating electrical forces between the AFM tip and sample surface,
and VDC nullifies the oscillating electrical forces that originated from
CPD between the tip and the sample surface. The electrostatic force
(Fes) between the AFM tip and sample is given by:
1 dC ( z )
Fes ( z )   V 2 (2.2)
2 dz
where z is the direction normal to the sample surface, V is the
potential difference between VCPD and the voltage applied to the AFM
tip, and dC/dz is the gradient of the capacitance between tip and
sample surface. The external potential, VExt, is an additional voltage
that is applied either to the tip or to the sample; the sign in front of VExt
is explained below. The voltage difference V will be [5]:
V  (VCPD  VExt )  V AC sin(t ) (2.3)
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The amplitude of the tip vibration, VAC, is proportional to the force
F. Substituting the expression of the voltage given in Equations 2.2
and 2.3 and collecting the terms according to their frequencies, the
following form for the amplitude of the tip vibration is obtained:
1 dC( z )
Fes ( z , t )   (VCPD  VExt )  V AC sin(t ) 2 (2.4)
2 dz
This equation can be divided into three parts:
C ( z )  1 
FDC    (VCPD  VExt ) 2  (2.5)
Z  2 
C ( z )
F   (VCPD  VExt )V AC sin(t ) (2.6)
Z
C ( z ) 1 2
F2   V AC cos(2t )  1 (2.7)
Z 4
FDC (Equation 2.5) results in a static deflection of the AFM tip. F
with frequency  (Equation 2.6) is used to measure the VCPD, and
F is used for capacitance microscopy [6]. F is electrical force
component modified with frequency . It is also the function of
VCPD and VAC. When electrostatic forces are applied to the tip by
VAC with VExt, additional oscillating components (due to the
electrical force) will be superimposed to the mechanical oscillation
of the AFM tip. A lock-in amplifier is employed to measure the VCPD,
to extract the F. The output signal of the lock-in amplifier is
directly proportional to the difference between VCPD and VExt. The
VCPD value can be measured by applying VExt to the AFM tip, such
that the output signal of the lock-in amplifier is nullified and F
reaches zero. Subsequently, the value of VExt is obtained for each
point on the sample surface and maps the work function or surface
potential of the whole sample surface area. The contact potential
difference, VCPD, is obtained by the following procedure: the direct
current VDC voltage, VExt , is varied until the alternating current VAC
vibration of the tip at the frequency ω is nullified; at this voltage
VExt =±VCPD.
When the external voltage is applied to the tip or to the sample it
changes their work functions. Hence, based on Equation 2.1 the
sign of VCPD will be different in the two cases. The posteriori dc
voltage difference (direction)VCPD is thus given for the two cases as:
2
 NCHAu cantilever of NANOSENSORS was used for KPFM
tip   Sample 
Sample
VCPD     VExt   VCPD  VExt (2.8) measurement. This model has a metallic layer coated on both sides
e  e 
of the cantilever and has a typical tip radius of curvature smaller
than 50 nm. The resonant frequency and force constant is 330 kHz
 Tip    Sample  and 42N/m, respectively. Here, the offset between the tip and the
Tip
VCPD    VExt      VCPD  VExt (2.9)
 e   e  surface sample may occur as shown in Figure 3(e). The cause for
this offset is the electrical factors that occurs from the VAC
where Equations 2.8 and 2.9 are for the cases of voltage applied to the amplitude. Therefore, to know the offset in the KPFM measurement,
sample and the tip, respectively. After the nullifying procedure, i.e., it is necessary to measure the HOPG or a calibration sample, which
when VCPD, we obtain VExt=±VCPD, where the ‘+’ and ‘-’ refer to the have work function values that are known in advance. One point is
external bias applied to the sample and the tip, respectively. to be noted—the difference between the Au and Al areas must be
constant according to the applied direction because there is an
KPFM mode for Park Systems absolute difference in work function.

There are various methods of measuring the KPFM mode in AFM.

Among them, Park Systems uses two frequencies as showed in Figure
2. Two implemented lock-in amplifiers in the controller are used for
each frequency moderation. One frequency is used to oscillate the
cantilever and obtain a surface image using bimorph, which is the term
for oscillating the cantilever using piezoelectric material. The other
frequency directly signals the cantilever at 17.0 kHz, which is the
frequency generally used for KPFM.
The topography signal and potential signal are acquired from each
frequency simultaneously and two images are created without affecting
each other. This allows the user to obtain a surface image and a
potential image with a single scan. The topography signal is obtained
by keeping the distance constant between the tip and sample, whereas
the potential image is obtained by applying a default external voltage
and potential measurement voltage on the cantilever as described in
Figure 2.

Figure 3. 25.0 um x 12.5 um KPFM images of the Au-Si-Al patterned

sample. When applied to cantilever direction topography (a) and VExt
(b). When applied to sample direction topography (c) and VExt (d). Scale
bar is 5um. (e) is a VExt (potential difference) line profile according to the
applied direction.

Analysis & repeatability about KPFM

The purpose of KPFM is to obtain the work function for the

Voltage Feedback measuring specimen, not the VCPD between the tip and the sample.
On: KPFM

Therefore, accurate analysis is essential. To obtain the exact work

Figure 2. KPFM schematic used by Park Systems. Figure 3 (e) is the line
profile data of the mean values for 16 adjacent points along the y-axis.
It can be seen in the metal regions in the potential difference(VExt)
image that they are mutually inverted. This proves that the inverted
signs, positive and negative expressions in Equations 2.8 and 2.9 are
correct.
function of the sample, it is necessary to measure several cantilevers
and average them to obtain more accurate work function values of
the samples. Calibration of the system must be done by using a
sample that has a work function that is already known, for instance
HOPG. First, a precise tip’s work function must be measured using
the sample with a given work function. This process is done to
eliminate the electrical offset that could possibly happen during

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 KPFM measurement. Secondly, after measuring the KPFM of the
sample, the work function of the tip is obtained by using Equation
2.10. Finally, repeating this process several times and averaging the
results will produce more accurate results.
Reference
[1] M. Nonnenmacher, M.P. Oboyle, H.K. Wickramasinghe, Appl.
Phys. Lett. 58(1991) 2921.
[2] H. Hoppe, T. Glatzel, M. Niggemann, A. Hinsch, M.C.
Lux-Steiner, N.S. Sariciftci, Nano Lett. 5 (2005) 269.
[3 T. Hallam, C.M. Duffy, T. Minakata, M. Ando, H. Sirringhaus,
Nanotechnology 20 (2009) 025203.
[4] L.M. Liu, G.Y. Li, Appl. Phys. Lett. 96 (2010) 083302.
[5] R. Shikler, T. Meoded, N. Fried, B. Mishori, Y. Rosenwaks, J.
Appl. Phys. 86 (1999) 107.
[6] S.V. Kalinin, A. Gruverman (Eds.), Scanning Probe Microscopy,
Springer, New York, 2007.

 Sample  Tip  eVExt (2.9)

Figure 4. KPFM data obtained using nine different NCHAu

(NANOSENSORS) probes on the Au-Si-Al patterned sample. The value on
Al (orange circles), Si (blue squares) and their differences (gray triangles)
are plotted.

The sample consisted of three different materials: Au, Si, and Al. For
the calibration surface sample, Au was selected to become the base
material. The work function of Si and Al were determined as

explained above. The theoretical work function values and the

experimentally determined work function values of Si and Al are
shown in Table 1.
Table1. Theoretical work function values and nine different NCHAu
probes work function values for average for each of the three
materials in the Au-Si-Al patterned sample.
Park Systems offers a suite of KPFM measurement solutions and
ultimately, KPFM has brought us a quantitative sample’s work
function measurement.

For more information, please visit: www.parksystems.com

3040 Olcott St. Santa, Clara CA 95054
inquiry@parksystems.com
+1 408-986-1110

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