AO4606

30V Complementary MOSFET

General Description Product Summary

The AO4606 uses advanced trench technology N-Channel P-Channel

MOSFETs to provide excellent RDS(ON) and low gate VDS= 30V -30V
charge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V)
form a level shifted high side switch, and for a host of
RDS(ON) RDS(ON)
other applications.
< 30mΩ (VGS=10V) < 28mΩ (VGS=-10V)
< 42mΩ (VGS=4.5V) < 44mΩ (VGS=-4.5V)

100% UIS Tested 100% UIS Tested

100% Rg Tested 100% Rg Tested

SOIC-8
D2 D1
Top View Bottom View
Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1

S2 S1
Pin1 n-channel p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 6 -6.5
ID
Current TA=70°C 5 -5.3 A
C
Pulsed Drain Current IDM 30 -30
Avalanche Current C IAS, IAR 10 23 A
Avalanche energy L=0.1mH C EAS, EAR 5 26 mJ
TA=25°C 2 2
PD W
Power Dissipation B TA=70°C 1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

Rev 10: April 2012 www.aosmd.com Page 1 of 9

 AO4606

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=6A 25 30
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 40 48
VGS=4.5V, ID=5A 33.5 42 mΩ
gFS Forward Transconductance VDS=5V, ID=6A 15 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 200 255 310 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 30 45 60 pF
Crss Reverse Transfer Capacitance 20 35 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.6 3.25 4.9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 4 5.2 6 nC
Qg(4.5V) Total Gate Charge 2 2.55 3 nC
VGS=10V, VDS=15V, ID=6A
Qgs Gate Source Charge 0.85 nC
Qgd Gate Drain Charge 1.3 nC
tD(on) Turn-On DelayTime 4.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.5Ω, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 14.5 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 8.5 12 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 2.2 3 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 10: April 2012 www.aosmd.com Page 2 of 9

 AO4606

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 15
10V VDS=5V
25 4.5V
7V 12

20
4V 9
ID (A)

ID(A)
15
3.5V 6
10 125°C

3 25°C
5 VGS=3V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

45 2

Normalized On-Resistance VGS=4.5V

1.8
40 ID=6A
VGS=4.5V
1.6
Ω)
RDS(ON) (mΩ

35
17
1.4 5
30 2
1.2
VGS=10V 10
25 ID=8A
1
VGS=10V
20 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)
18

100 1.0E+02
ID=6A
1.0E+01
80 40
1.0E+00
Ω)
RDS(ON) (mΩ

1.0E-01 125°C
IS (A)

60 125°C
1.0E-02
25°C
25°C
40 1.0E-03

1.0E-04

20 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 10: April 2012 www.aosmd.com Page 3 of 9

 AO4606

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 500
VDS=15V
ID=6A
8 400

Capacitance (pF)
Ciss
VGS (Volts)

6 300

4 200

Coss
2 100

Crss
0 0
0 2 4 6 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TA=25°C
10µs
10.0
RDS(ON)
limited 100
Power (W)

100µs
ID (Amps)

1.0 1ms
10ms 10
0.1 TJ(Max)=150°C DC 10s
TA=25°C

0.0
1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
Figure 9: Maximum Forward Biased
to-Ambient (Note F)
Safe Operating Area (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=90°C/W

0.1

PD
0.01
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 10: April 2012 www.aosmd.com Page 4 of 9

 AO4606

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 10: April 2012 www.aosmd.com Page 5 of 9

 AO4606

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 -1.85 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -30 A
VGS=-10V, ID=-6.5A 22 28
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 32 40
VGS=-4.5V, ID=-5A 34 44 mΩ
gFS Forward Transconductance VDS=-5V, ID=-6.5A 18 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V
IS Maximum Body-Diode Continuous Current -2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 760 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 140 pF
Crss Reverse Transfer Capacitance 95 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3.2 5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.6 16 nC
Qg(4.5V) Total Gate Charge 6.7 8 nC
VGS=10V, VDS=-15V, ID=-6.5A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=10V, VDS=-15V, RL=2.3Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=-6.5A, dI/dt=100A/µs 15 ns
Qrr Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs 9.7 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 10: April 2012 www.aosmd.com Page 6 of 9

 AO4606

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 40
-10V -4.5V VDS=-5V
-5V

30 30
-4V

-ID(A)
-ID (A)

20 20

-3.5V 125°C

10 10 25°C

VGS=-3V

0 0
0 1 2 3 4 5 0 1 2 3 4 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

45 1.8

40 VGS=-4.5V Normalized On-Resistance VGS=-10V

1.6 ID=-6.5A
35
Ω)
RDS(ON) (mΩ

30 1.4
17
25
5
1.2 2
VGS=-4.5V
20
ID=-5A 10
VGS=-10V 1
15

10 0.8
0 5 10 15 20 0 25 5075 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate 0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E) 18

90 1.0E+02
ID=-6.5A
1.0E+01
70 40
1.0E+00
125°C
Ω)
RDS(ON) (mΩ

1.0E-01
-IS (A)

50 125°C
25°C
1.0E-02

30 1.0E-03
25°C

1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.20.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 10: April 2012 www.aosmd.com Page 7 of 9

 AO4606

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=-15V
ID=-6.5A
1000
8
Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600

4
400
Coss
2 200

Crss
0 0

0 3 6 9 12 15 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TA=25°C
10µs
10.0
RDS(ON)
limited 100
-ID (Amps)

100µs
Power (W)

1.0 1ms
10ms
10
0.1 TJ(Max)=150°C DC 10s
TA=25°C

0.0
1
0.01 0.1 1 10 100
0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note F) to-Ambient (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W

0.1

PD
0.01

Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 10: April 2012 www.aosmd.com Page 8 of 9

 AO4606

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev 10: April 2012 www.aosmd.com Page 9 of 9