IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO.
9, SEPTEMBER 2013 1597
Embedded Transformed Radial Stub Cell for BPF
With Spurious-Free Above Ten Octaves
Kaixue Ma, Senior Member, IEEE, Shouxian Mou, Keping Wang, Member, IEEE,
and Kiat Seng Yeo, Senior Member, IEEE
Abstract— An embedding cell approach for design of a filter
with ultrawide-band rejection and compact size is introduced
and investigated. A bandpass filter (BPF) topology design based
on the transformed radial stub (TRS) cell embedded resonator
(CER) is proposed for the high-performance filter design. The
implemented 1.7-GHz BPF with a fractional bandwidth of 1.2%
using the TRS CER demonstrates more than 45 dB rejection
up to 10.8 f0 i.e., 18 GHz. The implemented 1.9-GHz BPF with
fractional bandwidth 21% demonstrates 40-dB rejection from
4 to 19 GHz (10 f0 ). The measured passband insertion loss is
2.7 dB, and group delay is around 2.5 nS. The size of the
1.9-GHz fourth-order filter is only 0.408g × 0.33 λ g , (λ g is the
guide wavelength at center cutoff frequency) without using any
lumped elements.
Index Terms— Band-pass filter BPF, embedding cell method,
hairpin resonator, microstrip, radial stub, transformed radial
stub TRS, wide stopband.
I. I NTRODUCTION
B AND-PASS filters (BPFs) are crucial to define the fre-
quency channel and remove undesired interferences, har-
monics, or spurious signals from environment or the circuits.
A planar miniaturized resonator with wide rejection bandwidth
is highly desirable for BPFs in radio frequency (RF) front-
ends in wireless communication systems. Three types of
the resonators including one-wavelength, half-wavelength, and
quarter-wavelength resonators are widely used for microwave
filter implementation. The BPFs based on one-wavelength
uniform-impedance resonators (UIRs), such as the ring res-
onator filter, and half-wavelength UIRs such as coupled-line
filters [1] and open-loop coupled-resonator filters [2], [3] are
popular, and these types of filters have the spurious responses
around n f0 (n = 2, 3, . . . , f 0 is the center operating fre-
quency). Quarter-wavelength UIRs are also used to implement
the BPFs, such as interdigital and combline BPFs [4]–[10].
The filters composed of quarter-wavelength UIRs possess
higher order harmonics occurring around (2n + 1) f 0 . Thus,
Manuscript received October 9, 2012; revised December 19, 2012; accepted
January 12, 2013. Date of publication January 30, 2013; date of current
version September 7, 2013. This work was supported in part by Exploit
Technologies Pte. Ltd. of A-Star, and Nanyang Technological University,
Singapore. Recommended for publication by Associate Editor R.-B. Wu upon
evaluation of reviewers’ comments.
The authors are with Virtus IC Design Center of Excellence, Nanyang
Technological University, 609602 Singapore (e-mail: makaixue@126.com;
sxmou@ntu.edu.sg; wkptom@gmail.com; eksyeo@ntu.edu.sg).
Color versions of one or more of the figures in this paper are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TCPMT.2013.2240768
2156-3950 © 2013 IEEE
by making good use of the resonators, one can use less effort
in implementing a filter with better out-of-band rejection.
Various methods have been developed to improve the stop-
band performance for a planar microwave BPF. The most
direct way is to cascade a low-pass filter into the designed
BPF. However, the use of an additional low-pass filter degrades
the insertion loss and also increases the size of the BPF.
The first spurious passband may be shifted up to a higher
frequency by a using the step-impedance-resonator (SIR)
[3]–[5]. However, due to the limitation of fabrication process,
the SIR may at most shift to around 5 f 0 . Alternatively, the
first spurious passband of the coupled-line half-wavelength
BPF located at 2 f c can be suppressed by using a wiggly line
filter [6], [7]. Stopband bandwidth may be extended by intro-
ducing some notch bands exactly at the spurious frequencies.
Specifically, by means of proper tapings at both the input and
output resonators, two independent notches can be created
at the required frequencies, thereby canceling the spurious
frequencies [7]. A special way by using the photonic bandgap
(PBG) structure or the defect ground structure (DGS) [11],
[12] in the transmission line ground or the signal lines is also
used to extend the stopband of the BPFs. The asymmetric
coupling may be used to suppress the parasitic passband [13].
The DGS stopband extension approach is more suitable for
narrow stopbands [14]–[17].
In this paper, the embedding cell concept of the trans-
formed radial stub (TRS) cell is adopted in the design of
compact BPFs with very wide stopband. Specifically, TRS cell
embedded into the ground-ended half-wavelength resonator is
properly selected and arranged so that a very wide stopband
microstrip BPF with deep stopband rejection can be realized.
The adoption of TRS cell into the cell embedded resonator
(CER) is the key to broaden the stopband and also to make the
circuit compact. Basically, the span between adjacent spurious
resonance frequencies of a TRS CER is much greater than
that of a normal half-wavelength resonator or SIR. Thus, the
rejection bandwidth of the filter composed of a TRS CER may
easily be made larger than that of a filter consisting of SIRs.
By properly arranging the spurious harmonic frequencies of
each resonator, microstrip BPFs with a very wide stopband
can be achieved without any degradation of insertion loss in
the passband. The proposed filter architecture is also more
compact because special resonators are used and no additional
components or distributed elements are required. By utilizing
the intrinsic characteristics of the ultrawide stopband of the
TRS CER, the TRS cell embedded half-wavelength resonator
1598 IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO. 9, SEPTEMBER 2013

(a)

Fig. 1. Proposed TRS cell embedded resonator and its equivalent circuit.

can achieve an ultra-wide stopband even above 10 octaves as

well as compact size simultaneously. Based on the proposed
TRS CER, two fourth-order bandpass filters with different (b)
bandwidths are designed and verified. The rest of this paper
is arranged as follows. In Section II, the proposed TRS CER
is introduced. In Section III, the coupling characteristics of
TRS CERs are investigated. In Section IV, TRS CER BPFs
are designed and verified by experiments. Finally, this paper (c)
is concluded in Section V.
Fig. 2. Odd- and even-mode equivalent circuit of the model in Fig. 2. (a) TRS
CER model with I/O coupling. (b) Equivalent network of TRS CER. (c) TRS
II. N ETWORK OF TRS CER CER model with I/O coupling.
Fig. 1 shows the basic layout of the proposed compact
TRS CER structure. The proposed structure can be divided
into five sections: shunt stub 1 (SS1), line 1(TL1), TRS cell, For the coupled transmission line network, the elements of
line 2 (TL2), and shunt stub 2 (SS2). The TRS cell consists the impedance matrix can be calculated by using an even–odd
a capacitive radial stub and a pair of symmetrical parallel mode of analysis method as follows:
coupled lines with a length Lv. The TRS CER in Fig. 1(a)
Z cl 11 = Z cl 22 = j (Z e tan θe + Z o tan θo )/2 (4a)
can be modeled as a cascading network of the TRS cell,
transmission lines, i.e., line 1 and line 2, and the shunt stubs, Z cl 21 = Z cl 21 = j (Z e tan θe − Z o tan θo )/2. (4b)
i.e., shunt stub 1 and shunt stub 2. The cascading sequence is For the radial network, the radial stubs are shown in the inset
shown in Fig. 2. The TRS CER in Fig. 2(a) is equivalent to of Fig. 2(a) and the network can be obtained as in [16]. The
the resonator with I/O coupling as shown in Fig. 2(b) and (c). elements are all the same and can be derived as
For analyzing this circuit, we assume that the structure is
lossless and the width of the feeding lines is negligible. Under Z r mn 
these assumptions, the total circuit network of the TRS CER j 120πh Y0 (βri )J1 (βr0 ) − J0 (βri )Y1 (βr0 ) 
=− √ (5)
can be derived from the transmission line network cascading. ri θ εeff J1 (βri )Y1 (βr0 ) − Y1 (βri )J1 (βr0 ) m,n=1,2
As shown in Fig. 2, the total-matrix of a serially connected
where Jx and Yx are the x-order Bessel functions of the first
network in Fig. 2 can be calculated by using the transmission √
matrix and second type, respectively; β = 2π εeff /λ0 is the phase
constant; h is the thickness of the dielectric layer; and εeff is
[TCER ] = [TSS1 ] [TTL1 ] [TTRS ] [TTL2] [TSS2 ] . (1) the effective dielectric constant of a microstrip line having a
width weq,sub = (r0 + ri ) sin(θ/2). Assuming r0 < λ0 /8 and
For lossless transmission lines of lines 1 and 2 with lengths
ri ≈ r0 /10, we expand the Bessel functions in (5) into a series
l1 and l2 , the transfer matrix is given by
  and keep up to the first-order terms, resulting in
cos (β2li ) j Z 2 sin (β2li )    
[TTLi ] =  . (2) j 120πh 2 10ri 
j Y2 sin (β2li ) cos (β2li ) i=1,2 ∼
Z r mn = − √ − β 2.8 −  .
ri θ εeff βr02 r0 
The transmission matrix of the TRS cell can be calculated m,n=1,2
(6)
from the impedance matrix of the TRS cell in (3) through the
The transmission matrix of the shunt stubs can be calculated
matrix conversion
from the impedance matrix of the shunt stubs (7) through the
[Z TRS ] = [Z r ] + [Z cl ] (3) matrix conversion as

Z via + Z 1 tan βl2 
where [Z r ]and [Z cl ] are the impedance matrices of the Z S Si mn = j Z 1  . (7)
radial stub and the coupled transmission lines, respectively. Z 1 tan βl2 − Z via Z 2 tan βl2 m,n=1,2
MA et al.: EMBEDDED TRANSFORMED RADIAL STUB CELL FOR BPF
Fig. 3. Resonances of the conventional half-wavelength UIR with
shorted ends and the proposed TRS CER, Dimensions: UIR: W = 6 mil,
L = 2600 mil. Proposed: L2 = L3 = 190 mil, Ro = 182 mil, Lv1 = 290 mil,
S = 6 mil, W = 6 mil, and θ 1 = 135°.
For the range of of h < 0.03 λg (h is the via height or the
thickness of the substrate, and λg is the guided wavelength),
the ground via can be calculated as the equivalent capacitor
Cvia (the parasitic capacitance of the pad for the ground via)
connected with the shunt inductor L via in parallel
Z via = 1/(1/j ωL via + j ωCvia ). (8)
An accurate and relatively simple closed-form equation for the
equivalent inductance is given by [19]
⎡ ⎛
⎞ to note that the frequency of the first spurious frequency
μ0 ⎣ h + r 2 + h2
via
L via = h · ln ⎝ ⎠ operation frequency is changed from 4.8 to 1.3 GHz. The ratio
2π rvia
⎤

 fabrication limitation of the SIR due to the high impedance
3 2 + h 2 ⎦ (H)
+ rvia − rvia (9)
2 for the filter design with a very wide stopband bandwidth.
 
Cvia = ε0 εr d 2 − 4πrvia 2
h (F) (10)
where rvia is the radius of the ground via and d is the edge
length of the square pad. From the resonator with I/O coupling,
the TRS CER can be equivalent to the K-inverter type of the
network as shown in Fig. 2(b) and simplified as the symbol
model shown in Fig. 2(c).
From the relationship between the transmission and scat-
tering matrices, the response of the TRS CER can be cal-
culated using (1)–(10). The Roger substrate Ro5880 with
dielectric constant 2.2 and substrate thickness of 10 mil is
used in the following design and investigation. The spectra
responses of the proposed resonator are compared with those
of the traditional short-ended UIR half-wavelength resonator
in Fig. 3. In contrast to the conventional half-wavelength
resonator, both TRS CER and the UIR have the same operation
frequency of 1.68 GHz. For the UIR, the periodic appearance
of the spurious frequency at (n + 1) times of the fundamental
resonant frequency makes the stopband narrow, and the upper
stopband rejection is not good. While the proposed TRS CER
demonstrated not only a wide stopband but also deep rejection
in the upper stopband due to the additional zeros, i.e., ZP1 and
1599
Fig. 4. Fundamental resonance and the first spurious of the proposed TRS
CER versus the radial radius: L2 = L3 = 190 mil, Lv1 = 290 mil, S = 6 mil,
W = 6 mil, and θ1 = 135°.
ZP2 generated. The TRS CER is further investigated according
to different dimensions. It is found that the TRS cell can
contribute to the wide bandwidth between the fundamental
resonant frequency and the first spurious frequency. The radius
of the radial stub with the coupling transformer determines the
stopband bandwidth. To further illustrate the wide stopband
characteristics of TRS CER, the relationship of the funda-
mental operation frequency and first spurious frequency for
different radii of the radial stub are plotted in Fig. 4. As shown
in Fig. 4, keeping the other dimensions fixed, and changing
the radius of the radial stub from 8 to 240 mil. It is interesting
is almost fixed at around 9.2 GHz, while the fundamental
f 1 / f 0 can be changed from 2 to 7, which is free from the
line implementation. These characteristics give more flexibility
III. TRS CER C OUPLING I NVESTIGATION
With the known TRS CER characteristics, the coupling
characteristics between the resonators are investigated in this
section. In the synchronized coupling condition, the even and
odd mode method [20] can be adopted. As in the asynchronous
case, the coupled resonators can afford asynchronous coupling
conditions. For the asynchronous case (i.e., the dimension of
those two TRS CERs are different), Mi j can be derived as

   2   2 2
f0i 
2 2
f p j − f pi f0 j − f 0i2
1 f 0j 
Mi j = + − .
2 f 0i f0 j f p2j + f pi
2 f02j + f 0i2
(11)
Here, f0i and f 0 j (i and j are 1 or 2) are the resonant
frequencies of these two TRS CERs when they are not
coupled, and f pi and f p j are the two dominant resonant
frequencies of the coupled scheme. For the layout of the
two coupled TRS CERs in Fig. 5, the inter-stage coupling
is dominated by the magnetic coupling formed by the shunt
stub L4, which is also part of the resonators. Under this
condition, it is difficult to determine the uncoupled resonant
frequencies and the coupled resonant frequencies from (11)
1600 IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO. 9, SEPTEMBER 2013
(a)
(b)
Fig. 5. Topology and extraction of the coupled TRS CERs. (a) Topology of
coupled TRS CERs. (b) Splitting for coupling coefficient extraction.
for the asynchronous coupled resonators. Thus, we introduce
a circuit-based extraction procedure. As shown in Fig. 5(b),
a split wall is applied along the middle of the coupling
shunt stub L4 including ground via. For the coupled dominant
operating frequencies, a magnetic wall is introduced along the
middle of the stub L4 to get the coupled resonant frequencies.
At resonance, the input impedance of the left resonator ZL
should be equal to the negative of the input impedance of the
right resonator ZR. As the extracted input impedances given in
Fig. 6, the image impedance of ZR minus the image impedance
of ZL should equal to zero. However, four roots are obtained in
Fig. 6. Thus another condition of resonance, i.e., the maximum
real impedance, is used to determine the two roots for the
coupled resonators. Two resonant frequencies, i.e., f 1 and f 2 ,
can be obtained as shown in Fig. 6. The magnetic coupling
coefficient can be calculated as
f 22 − f 12
Mi j = . (12)
f 22 + f 12
For understanding the coupling mechanism and the resonant
frequency with respect to the coupling shunt stub, the resonant
frequencies and the coupling coefficient are given in Fig. 7.
As shown by Fig. 7, f1 and f 2 , which are at the different
operating frequencies as in the case of asynchronous coupled
Fig. 6. Magnetic wall extraction of the resonant frequencies.
Fig. 7. Operating frequencies under coupling scheme and the required
coupling coefficient of the two coupled TRS CERs.
resonators, depend on the length L 4 when the width W4 fixed.
The coupling coefficients Mi j will increase as the length of
L 4 increases, while the operating frequencies f 1 and f 2 will
decrease with the increase of L 4 .
IV. TRS CER F ILTER D ESIGN
With the known the characteristics of the proposed resonator
and the coupling resonators, the TRS CERs can be cascaded
to form the high-order BPF to achieve the wide stobpand
and deep rejection. An example configuration for the fourth-
order TRS CER BPF based on the TRS CERs is given in
Fig. 8. Four TRS cells are embedded into the four resonators.
For the simplification of the design, the four TRS CERs can
be chosen symmetrically along W7 and L7 in the resonator
dimensions, i.e., only two types of the TRS CER with different
dimensions are needed and to be designed. The equivalent
filter topology of the proposed BPFs is given in Fig. 8(b),
where four resonators with the source and load couplings and
the inter-stage coupling K 12 and K 23 are shown. The design
procedure is to as follows.
1) Design the TRS CER according to the BPF center
operating frequency and stopband requirements.
2) Design the proper schematic configuration according to
the connections and the inter-stage coupling coefficient
required.
MA et al.: EMBEDDED TRANSFORMED RADIAL STUB CELL FOR BPF 1601

TABLE I
D IMENSIONS OF THE D ESIGNED BPFs

L1 /W1 L2 /W2 L3 /W3 L4 /W4 L5 /W5 L6 /W6 L7 /W7

Other
457/17 84/6 286/6 283/11 286/6 38/6 54/6
BPF1
Ro /Ri /Lv W/S Ro /Ri /Lv W/S
TRS cell #1 TRS Cell #2
94/11 135°/500 6/10 146/11 135°/335 6/9.8
L1 /W1 L2 /W2 L3 /W3 L4 /W4 L5 /W5 L6 /W6 L7 /W7
Other
526/16 99/6 209/6 284/6 209/6 38/6 56/6
BPF2
Ro /Ri /Lv W/S Ro /Ri /Lv W/S
TRS cell #1 TRS Cell #2
89/11 135°/460 6/10 162/11 135°/220 6/9.8
Note: the unit is in mil.

(a)

(b)

Fig. 8. Circuit topology of cascaded fourth-order TRS CER BPF. (a) Circuit Fig. 10. Measured wide band frequency response of the proposed fourth-
of the proposed BPF based on TRS CERs. (b) Topology of the proposed TRS order BPF1.
CER BPF.

conditions (the wide stopband is more challenging to achieve

Fig. 9. Comparison of the simulated and measured frequency response of
the proposed fourth-order BPF1.
3) Carry out the design and optimization in the schematic
level simulation based on the transmission models using
the commercial software in ADS.
4) Effect proper layout and routing according to the con-
nections and schematic simulation results.
5) Carry out full-wave electromagnetic simulation and
dimension optimization for the passband and stopband
response.
For verification of the applications of the proposed tech-
niques for both narrow bandwidth and relative wideband
for the wide passband condition), two fourth-order BPFs of
narrowband and wideband are designed based the proposed
topology and technique. One BPF named BPF1 is designed
with an operation frequency of 1.73 GHz and fractional
bandwidth of 1.2% (Q ei = Q eo = 117.9, K 12 = 0.0065,
K 23 = 0.01). The other BPF named BPF2 is designed with an
operation frequency of 1.9 GHz and a fractional bandwidth
of 21% (Q ei = Q eo = 6.7, K 12 = 0.113, K 23 = 0.177).
A circuit simulator and an EM simulator from Agilent ADS
were used for the design and optimization to achieve good
passband response and ultrawide stopband to above 10 times
the fundamental operation frequency. The dimensions of the
designed filters are given in Table I referring to Fig. 8.
The simulated and the measured results of BPF1 in the
narrow band range of 0.2–3.2 GHz are compared in Fig. 9.
A pass band return loss better than 15 dB and very deep
stopband rejection up to 80 dB are achieved. The passband
insertion loss of 3.5 dB is actually very good considering the
narrow fractional bandwidth of 1.2%. The measured center
frequency is shifted up by 60 MHz as compared with the
simulated results. The group delay is in the range of 3.6–4.3 ns
in the passband range, which is almost constant and very good
for linear filter requirements. The measured results in the wide
band range from d.c. to 18 GHz are shown in Fig. 10. Better
than 45-dB rejection is achieved up to 18 GHz, which is 10.4
times the fundamental operation frequency. A photograph of
1602 IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO. 9, SEPTEMBER 2013
Fig. 11. Narrow band comparison of the simulated and measured frequency
response of the proposed fourth-order BPF2.
Fig. 12. Wide band comparison of the simulated and measured frequency
response of the proposed fourth-order BPF2.
the designed filter is shown in Fig. 13. The board size of
the fourth-order BPF1 in Fig. 13 is 5.4 × 3.3 cm which is
only 0.42 × 0.26 λg . For the narrow-band BPF, the advantages
of the TRS CER filter are not only the lower insertion loss,
steep rolloff, and deep stopband rejection but also the ultrawide
stopband band rejection and compact size.
The simulated and measured results of the BPF2 are com-
pared in Figs. 11 and 12. Both results agree well in passband
and the stopband. The simulated and the measured results of
BPF2 in the narrow-band range of 0.2–3.2 GHz are compared
in Fig. 11. From the figure, it can be seen that better than
12 dB pass band return loss and a very deep stopband rejection
up to 80 dB are achieved. The measured passband insertion
loss is 2.7 dB. The measured center frequency is shifted up by
90 MHz as compared with the simulated results. The simulated
and measured results of the group delay of the proposed BPF
are also compared in Fig. 11. The group delay is in the
range of 2.5–3.7 ns in the whole passband range, which is
better than that of the narrow-band BPF. The simulated and
measured results in wide band range from d.c. to 19 GHz are
compared in Fig. 12. Good agreement between the simulation
and measurement in the whole frequency range d.c. to 19 GHz
is obtained as well. Better than 40 dB rejection is achieved
up to 19 GHz, which is 10 times the fundamental operation
frequency. The reflection in the stopband is actually better
(a) (b)
Fig. 13. Photographs of the proposed TRS CER BPF. (a) TRS CER BPF 1.
(b) TRS CER BPF 2.
than that of the narrow bandwidth filter BPF1. It can be seen
that for 21% fractional bandwidth, good stopband performance
with deep rejection can be maintained. The photograph of the
designed filter is shown in Fig.13. The board size of the fourth-
order BPF2 including the I/O additional 50- connection lines
is 4.7 × 3.3 cm, which is only 0.408 × 0.33 λg .
V. C ONCLUSION
In this paper, a radial loaded TRS CER was proposed and
investigated. High-order filters by using the proposed TRS
CERs were designed. It was demonstrated that the proposed
TRS CER half-wavelength filters have merits to be used as
bandpass filters to achieve both an ultrawide stopband and
a compact size. The measured results of the proposed filters
demonstrated not only an ultra-wide stopband, deep stopband
rejection, low insertion loss, and compact size but also good
group delay and skirt selectivity.
R EFERENCES
[1] S. B. Cohn, “Parallel-coupled transmission-line-resonator filters,” IRE
Trans. Microw. Theory Tech., vol. 6, no. 2, pp. 223–231, Apr. 1958.
[2] J. T. Kuo, S. P. Chen, and M. Jiang, “Parallel-coupled microstrip filters
with over-coupled end stages for suppression of spurious responses,”
IEEE Microw. Wireless Compon. Lett., vol. 13, no. 10, pp. 440–442,
Oct. 2003.
[3] M. Makimoto and S. Yamashita, “Bandpass filters using parallel coupled
stripline stepped impedance resonators,” IEEE Trans. Microw. Theory
Tech., vol. 28, no. 12, pp. 1413–1417, Dec. 1980.
[4] J. T. Kuo, W. H. Hsu, and W. T. Huang, “Parallel coupled microstrip
filters with suppression of harmonic response,” IEEE Microw. Wireless
Compon. Lett., vol. 12, no. 10, pp. 383–385, Oct. 2002.
[5] J. T. Kuo and E. Shih, “Microstrip stepped impedance resonator band-
pass filter with an extended optimal rejection bandwidth,” IEEE Trans.
Microw. Theory Tech., vol. 51, no. 5, pp. 1554–1559, May 2003.
[6] T. Lopetegi, M. A. G. Laso, J. Hernández, M. Bacaicoa, D. Benito, M. J.
Garde, M. Sorolla, and M. Guglielmi, “New microstrip wigglyline filters
with spurious passband suppression,” IEEE Trans. Microw. Theory Tech.,
vol. 49, no. 9, pp. 1593–1598, Sep. 2001.
[7] T. Lopetegi, M. A. G. Laso, F. Falcone, F. Martin, J. Bonache, J. Garcia,
L. Perez-Cuevas, M. Sorolla, and M. Guglielmi, “Microstrip ‘wiggly-
line’ bandpass filters with multi-spurious rejection,” IEEE Microw.
Wireless Compon. Lett., vol. 14, no. 11, pp. 531–533, Nov. 2004.
[8] S. Y. Lee and C. M. Tsai, “New cross-coupled filter design using
improved hairpin resonators,” IEEE Trans. Microw. Theory Tech.,
vol. 48, no. 12, pp. 2482–2490, Dec. 2000.
[9] J. G. García, F. Martin, F. Falcone, J. Bonache, I. Gil, T. Lopetegi,
M. A. G. Laso, M. Sorolla, and R. Marqués, “Spurious passband
suppression in microstrip coupled line band pass filters by means of
split ring resonators,” IEEE Microw. Wireless Compon. Lett., vol. 14,
no. 9, pp. 416–418, Sep. 2004.
[10] W. H. Tu and K. Chang, “Compact microstrip bandstop filter using open
stub and spurline,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 4,
pp. 268–270, Apr. 2005.
MA et al.: EMBEDDED TRANSFORMED RADIAL STUB CELL FOR BPF
[11] A. Abdel-Rahman, A. K. Verma, A. Boutejdar, and A. S. Omar,
“Compact stub type microstrip bandpass filter using defected ground
plane,” IEEE Microw. Wireless Compon. Lett., vol. 14, no. 4,
pp. 136–138, Apr. 2004.
[12] G. M. Yang, R. Jin, J. Geng, X. Huang, and G. Xiao, “Ultra-wideband
bandpass filter with hybrid quasi-lumped elements and defected ground
structure,” IET Microw. Antennas Propag., vol. 1, no. 3, pp. 733–736,
Jun. 2007.
[13] J. Gao and L. Zhu, “Asymmetric parallel-coupled CPW stages for
harmonic suppressed λ/4 bandpass filters,” Electron. Lett., vol. 40,
no. 18, pp. 1122–1123, Sep. 2004.
[14] K. Ma and K. S. Yeo, “Novel low cost compact size planar low pass
filters with deep skirt selectivity and wide stopband rejection,” in Proc.
IEEE MTT-S Int. Microw. Symp. Dig., May 2010, pp. 233–236.
[15] K. Ma and K. S. Yeo, “New ultra-wide stopband low-pass filter using
transformed radial stubs,” IEEE Trans. Microw. Theory Tech., vol. 59,
no. 3, pp. 604–611, Mar. 2011.
[16] Z. Wang, S. Bu, and Z. Luo, “A substrate integrated folded waveguide
(SIFW) H-plane band-pass filter with double H-plane septa based on
LTCC,” IEEE Trans. Ultrason. Ferroelectr. Freq. Control, vol. 59, no. 3,
pp. 560–563, Mar. 2012.
[17] H.-J. Chen, T.-H. Huang, C.-H. Chang, L.-S. Chen, J.-H. Horng, Y.-H.
Wang, and M.-P. Houng, “A Compact bandpass filter with enhanced-
stopband characteristics by an asymmetric cross-shape defected ground
structure,” IEEE Trans. Ultrason. Ferroelectr. Freq. Control, vol. 53,
no. 11, pp. 2183–2187, Nov. 2006.
[18] S. L. March, “Analyzing lossy radial-line stubs,” IEEE Trans. Microw.
Theory Tech., vol. 33, no. 3, pp. 269–271, Mar. 1985.
[19] M. E. Goldfarb and R. A. Pucel, “Modeling via hole grounds in
microstrip,” IEEE Microw. Guided Wave Lett., vol. 1, no. 6, pp. 135–137,
Jun. 1991.
[20] K. Ma, S. Mou, K. Wang, and K. S. Yeo, “Transformed radial stub cell
embedded resonator for high performance filter applications,” in Proc.
IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2012, pp. 1–3.
[21] J. S. Hong and M. J. Lancaster, Microstrip Filters for RF/Microwave
Applications, New York, USA: Wiley, 2001, pp. 235–272.
Kaixue Ma (M’05–SM’09) received the B.E. and
M.E. degrees from Northwestern Polytechnical Uni-
versity, Xi’an, China, and the Ph.D. degree from
Nanyang Technological University (NTU), Singa-
pore.
From 1997 to 2002, he was with the China Acad-
emy of Space Technology, Xi’an, where he was
the Group Leader of Millimeter-Wave Group for
research on space-borne microwave and mm-wave
components and subsystem for satellite payload and
VSAT ground station. From 2005 to 2007, he was
with MEDs Technologies as the R&D Manager. From 2007 to 2010, he was
with ST Electronics (Satcom & Sensor Systems) as the R&D Manager, where
he was on the Technique Management Committee. Since 2010, he has been
with NTU as a Senior Research Fellow and the RFIC Team Leader for 60-GHz
Flagship Chipset project. He was a PI/Technique Leader and was involved
in projects with funds of more than S$12 Million (excluding projects done
in China). He has authored or co-authored over 80 papers in international
journals and conferences. He holds 8 patents and 2 patents in pending. His
research interests include satellite communication, software defined radios,
microwave and mm-wave circuits and system using CMOS, MEMS, MMIC,
and LTCC.
Dr. Ma was a recipient of the Best Paper Award at IEEE SOCC2011,
the IEEK SOC Design Group Award, the Excellent Paper Award at the
International Conference on HSCD2010, Chip Design Competition Bronze
Award at ISIC2011. He is a reviewer of several international journals.
Shouxian Mou received the Ph.D. degree from
Nanyang Technological University, Singapore, in
2007.
He is currently a Research Fellow with the
VIRTUS-IC Design Centre of Excellence, Nanyang
Technological University, where he is involved in
research on 60-GHz wireless transceiver chip devel-
opment. He was with OKI Techno Centre, Singa-
pore, as an RF Design Engineer.
1603
Keping Wang (M’10) received the B.S. degree in
electronic engineering from the Southeast Univer-
sity, Nanjing, China, the M.S. degree in information
science and electronic engineering from the Zhe-
jiang University, Hangzhou, , China, and the Ph.D.
degree in information science and engineering from
the Southeast University, in 2003, 2006, and 2010,
respectively.
He was a Research Fellow with Nanyang Tech-
nological University, Singapore, from 2010 to 2012,
where he was involved in research on 60GHz trans-
ceiver project. He joined the Wireless Sensing Laboratory, University of
Washington, WA, as a Post-Doctoral Research Associate in 2012. His cur-
rent research interests include low-power, low-noise oscillators, synthesizers
and sensors interfaces using piezoelectric microelectromechanical system
resonators.
Kiat Seng Yeo (SM’09) received the B.Eng. (Hons.)
and Ph.D. degrees in electrical engineering from
Nanyang Technological University (NTU), Singa-
pore, in 1993 and 1996, respectively.
He joined the School of Electrical and Electronical
Engineering, NTU, as a lecturer in 1996. He is a
widely known authority on low-power integrated cir-
cuit (ICs) design and a recognized expert in CMOS
technology and radio frequency (RF) IC design. He
was the first person in South-East Asia to set up a
facility to perform research and development in RF
CMOS device modeling and characterization. As a result of his innovative
pioneering work in the field of IC design, he has successfully attracted more
than S$30 million of external research funding from various funding agencies
and the industry in the last 5 years. Since 1996, he has been providing consul-
tation services to statutory boards, local SMEs and multinational corporations
in the areas of IC design. Several of his patents were licensed to companies
for commercial exploitation. He has authored or co-authored more than
300 papers in international journals and conferences, authored 3 book chap-
ters, and has authored 6 books: Intellectual Property for Integrated Circuits
(J. Ross Publishing (USA), International Edition, 2009), Design of CMOS RF
Integrated Circuits and Systems (World Scientific Publishing, International
Edition, 2009), Low-Voltage, Low-Power VLSI Subsystems (McGraw-Hill,
New York, International Edition, 2005), Low-Voltage Low-Power Digital
BiCMOS Circuits: Circuit Design, Comparative Study, and Sensitivity Analysis
(Prentice Hall, NJ: Upper Saddle River, International Edition, 2000) and
CMOS/BiCMOS ULSI: Low-Voltage, Low-Power (Prentice Hall, NJ: Upper
Saddle River, International Edition, 2002). The latter was translated to
Chinese version and was one of the excellent foreign textbooks in China.
He holds 25 patents, including two patents for the world’s smallest integrated
transformer, the inventor of several high Q-factor RF spiral inductors and a
co-inventor of quite a few novel circuit techniques for RF IC applications.
Dr. Yeo was a recipient of the Public Administration Medal (Bronze)
on National Day 2009 by the President of the Republic of Singapore,
and the distinguished Nanyang Alumni Award in 2009 for his outstanding
contributions to the university and society. With his exemplary research
leadership and several major breakthroughs in the field of IC design, NTU was
ranked 16th in the world and among the top three in Asia in 2008 Integrated
Circuit Design Research Ranking for Worldwide Universities published by
the Journal of Circuits, Systems and Computers. He is also an excellent
teacher who shows distinction and success. He has supervised or trained
more than 100 researchers and postgraduate students. He was the Sub-
Dean (Student Affairs), the Program Manager of the System-on-Chip flagship
project, the Research Coordinator of the Integrated Circuit Design Group, and
the Principal Investigator of the Integrated Circuit Technology Group at NTU.
In 2009, he founded VIRTUS, a S$50 million IC Design Centre of Excellence
jointly funded by NTU and Singapore’s Economic Development Board. He is
currently a Board Member of the Singapore Semiconductor Industry Associ-
ation and the Head of Division of Circuits and Systems. He has given several
keynotes and invited presentations at various scientific meetings, workshops,
and seminars. He is on the Editorial Board of the IEEE TRANSACTIONS
ON MICROWAVE THEORY AND TECHNIQUES. He is or was the General
Chair, the Co-General Chair, or the Technical Chair of many international
conferences.