IGBT

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode

IKW15N120H3
1200Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl
 IKW15N120H3
Highspeedswitchingseriesthirdgeneration

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode

Features: C

TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C G
•qualifiedaccordingtoJEDECfortargetapplications E
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW15N120H3 1200V 15A 2.05V 175°C K15H1203 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

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MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 30.0 A
TC=100°C 15.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 15.0 A
TC=100°C 7.5
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=175°C 10
PowerdissipationTC=25°C 217.0
Ptot W
PowerdissipationTC=100°C 105.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.70 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 2.12 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

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ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=15.0A
Tvj=25°C - 2.05 2.40
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 2.50 -
Tvj=175°C - 2.70 -
VGE=0V,IF=7.5A
Diode forward voltage VF Tvj=25°C - 1.80 2.35 V
Tvj=175°C - 1.85 -
VGE=0V,IF=15.0A
Tvj=25°C - 2.40 3.05
Diode forward voltage VF V
Tvj=125°C - 2.60 -
Tvj=175°C - 2.60 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.0 5.8 6.5 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 250.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V,IC=15.0A - 7.5 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 875 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 75 - pF
Reverse transfer capacitance Cres - 45 -
VCC=960V,IC=15.0A,
Gate charge QG - 75.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤600V,
Max. 1000 short circuits IC(SC) tSC≤10µs - - A
52
Time between short circuits: ≥ 1.0s Tvj=175°C

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SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 21 - ns
Rise time tr VCC=600V,IC=15.0A, - 34 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=35.0Ω,RG(off)=35.0Ω, - 260 - ns
Fall time tf Lσ=95nH,Cσ=67pF - 14 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.10 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.45 - mJ
Total switching energy Ets - 1.55 - mJ

DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 260 - ns
Diode reverse recovery charge Qrr VR=600V, - 0.80 - µC
IF=15.0A,
Diode peak reverse recovery current Irrm diF/dt=500A/µs - 7.7 - A
Diode peak rate of fall of reverse
dirr/dt - -110 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 19 - ns
Rise time tr VCC=600V,IC=15.0A, - 30 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=35.0Ω,RG(off)=35.0Ω, - 327 - ns
Fall time tf Lσ=95nH,Cσ=67pF - 43 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.60 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.90 - mJ
Total switching energy Ets - 2.50 - mJ

DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr Tvj=175°C, - 470 - ns
Diode reverse recovery charge Qrr VR=600V, - 1.70 - µC
IF=15.0A,
Diode peak reverse recovery current Irrm diF/dt=500A/µs - 9.8 - A
Diode peak rate of fall of reverse
dirr/dt - -80 - A/µs
recoverycurrentduringtb

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70 100

60
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
tp=1µs
50
10 10µs

40 50µs
TC=80°
100µs
TC=110°
30 200µs
TC=80°
500µs
1
TC=110°
20 DC

10

0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=35Ω)

250 30

200
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

20

150

100

10

50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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60 60

VGE=20V VGE=20V

17V 17V
45 45
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
15V 15V

13V 13V

11V 11V

9V 9V
30 30
7V 7V

5V 5V

15 15

0 0
0 2 4 6 0 2 4 6 8
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

60 5.0
Tj=25°C IC=7.5A
Tj=175°C IC=15A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

4.5 IC=30A

45 4.0
IC,COLLECTORCURRENT[A]

3.5

30 3.0

2.5

15 2.0

1.5

0 1.0
5 10 15 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10
0 5 10 15 20 25 30 10 30 50 70 90 110
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E) IC=15A,testcircuitinFig.E)

1000 7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

td(on) max.
tr
6
t,SWITCHINGTIMES[ns]

100

10 2
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=15A, (IC=0.5mA)
rG=35Ω,testcircuitinFig.E)
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7 5
Eoff Eoff
Eon Eon
Ets Ets
6
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
4

3
4

3
2

1
1

0 0
0 5 10 15 20 25 30 10 30 50 70 90 110
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E) IC=15A,testcircuitinFig.E)

2.5 3.5
Eoff Eoff
Eon Eon
Ets Ets
3.0
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

2.0

2.5

1.5
2.0

1.5
1.0

1.0

0.5
0.5

0.0 0.0
25 50 75 100 125 150 175 400 500 600 700 800
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=15/0V,IC=15A, (ind.load,Tj=175°C,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E) rG=35Ω,testcircuitinFig.E)
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16
240V
960V
14

1000
VGE,GATE-EMITTERVOLTAGE[V]

12
Cies
Coes

C,CAPACITANCE[pF]
Cres
10

100
6

0 10
0 10 20 30 40 50 60 70 80 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=15A) collector-emittervoltage
(VGE=0V,f=1MHz)

90 50
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

80
tSC,SHORTCIRCUITWITHSTANDTIME[µs]

40
70

60
30

50

20
40

30
10

20

10 0
10 12 14 16 18 10 12 14 16 18 20
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤600V,startatTj=25°C) (VCE≤600V,startatTj≤150°C)

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1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1

D=0.5 D=0.5
0.2 0.2
0.1 0.1 0.1
0.05 0.05
0.02 0.1 0.02
0.01 0.01
single pulse single pulse

0.01
0.01

i: 1 2 3 4 5 i: 1 2 3 4 5
ri[K/W]: 3.9E-3 0.15885 0.23655 0.2763 0.015225 ri[K/W]: 0.67965 0.8319 0.51885 0.08454 9.7E-3
τi[s]: 1.6E-5 3.0E-4 2.9E-3 0.01490178 0.1582781 τi[s]: 2.5E-4 1.5E-3 8.7E-3 0.03938437 0.2738978

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance Figure 22. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

800 2.5
Tj=25°C, IF = 15A Tj=25°C, IF = 15A
Tj=175°C, IF = 15A Tj=175°C, IF = 15A

700
Qrr,REVERSERECOVERYCHARGE[µC]

2.0
trr,REVERSERECOVERYTIME[ns]

600

1.5

500

1.0

400

0.5
300

200 0.0
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=600V) (VR=600V)

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15 0
Tj=25°C, IF = 15A Tj=25°C, IF = 15A
Tj=175°C, IF = 15A Tj=175°C, IF = 15A
Irr,REVERSERECOVERYCURRENT[A]

12

dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-50

-100

-150
3

0 -200
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=600V) currentslope
(VR=600V)

50 4.0
Tj=25°C IF=3.75A
Tj=175°C IF=7.5A
IF=15A
3.5
40
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

3.0

30

2.5

20

2.0

10
1.5

0 1.0
0 1 2 3 4 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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PG-TO247-3

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vGE(t) I,V
90% VGE
dIF/dt a b

a b
10% VGE
t
IC(t)
dI

90% IC
90% IC

10% IC 10% IC
t Figure C. Definition of diode switching
characteristics
vCE(t)

td(off) tf td(on) tr
t

Figure A.
vGE(t)
90% VGE
Figure D.

10% VGE
t
IC(t)

CC

2% IC
t

vCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Ls,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t1 t2 t3 t4
t

Figure B.

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Revision History
IKW15N120H3

Revision: 2014-12-01, Rev. 2.1

Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-11-27 -
1.2 2010-02-10 -
2.1 2014-12-01 Final data sheet

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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.

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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.

16 Rev. 2.1, 2014-12-01