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INTELLIGENT MICRO-NANO-FABRICATION
Prof. PhD Eng. EurEng. Gh. Ion Gheorghe 1, PhD Student Iulian Ilie2, PhD Eng. Simona Istriteanu3,
PhD Eng. Valentina Bajenaru4
1
General Manager– INCD Mechatronics & Measurement Technique, Bucharest
Associated Prof. in U. Valahia of Târgovişte, U.T.M Bucharest and U. P. Bucharest
Scientific Doctorates Coordinator in Doctoral School of Mechanical Engineering, U. V. of Târgovişte
Corresponding Member of the Academy of Technical Sciences in Romania
2,3,4
INCD Mechatronics & Measurement Technique, Bucharest
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A nanoimprint technique recently used for 3. μnFabrication quantum structure using epitaxis
stamping a silicon substrate in less than 250 ns using on moulded substrates
XeCl laser (308 nm) and a quartz mask (LADI - laser
assisted direct imprint), fig. 3.
Precise atomic deposition techniques like
molecular beam epitaxy (MBE) and chemical deposition
of metal-organic vapours (MOCVD) have proven to be
useful means for the fabrication of confined quantum
structures and devices (including quantum source lasers,
photodetectors and resonant unnel diode). Although
quantum sources and super-structures are structures that
are the most suitable for these techniques (Fig. 1a),
quantum wires and quantum dots were also made by
adding additional steps such as etching or selective
growth. Quantum cavity and super-structures
fabrication using epitaxial growth is a mature and well
developed field.
Various ways were used to manufacture wires and
quantum dots using epitaxial layers. The simplest
Fig.3. Very fast silicon nano-print using a XeCl laser method involves electron ray lithography and etching a
epitaxially grown layer (such as InGaAs on a GaAs
Figure 4 shows the SEM micro-diagrames of the substrate).
quartz print and the silicon substrate printed with lines
Due to damages and / or contamination occurring
of 140 nm obtained using LADI. Nano-print
during lithography, this method is very suitable for the
lithography processes were also modified for nano-fluid
active fabrication of the device (of lasers with quantum
channel fabrication (for manipulating DNA) and
dots, for example).
multilayer polymer structures.
Figure 5 shows a cross section of nano-fluidic channels Various other methods involving epitaxial layers
fabricated using imprint lithography. growth over uneaven surfaces as side-stair, split-ende
and shaped substrate were used to fabricate quantum
wires and dots without the need for the lithography and
etching of the quantum structure.
These templates of the uneaven surace can be
produced in a variety of ways, such as etching through a
mask or split along the crystallographic planes.
Subsequent epitaxial growth on top of these
structures results in a set of planes with different growth
rates depending on the geometry or surface diffusion
and adsorption effects. These effects can increase or
limit the growth rate in various planes, resulting in
shaping and limiting of lateral epitaxial layers deposited
Fig.4. a, b. SEM Micro-diagrames of: and the formation of quantum wires (in channel V) and
dots (in inverted pyramids).
a. a quartz template and b) a silicon surface
printed using LADI Figure 6 shows a schematic section of an InGaAs
quantum wiresfabricated in a V channel of InP. As can
be seen, the growth rate on the sidewalls is less than in
the surfaces from the top and the bottom.
Therefore, a thinner InGaAs layer from the basis
of the V channel forms a quantum wire limited at the
edges with a thinner layer with a larger gap between the
bands.
Figure 7 shows a quantum wire formed using
epitaxial growth over a dielectric planar shaped
substrate. Quantum cavity creation isnrelatively eassy
using any of these techniques; however, in order to
create wires and quantum dots, electron beam
Fig.5 Solar rays of a nano-fluidic channel using nano- lithography is still necessary to mold channels and
imprint lithography window templates.
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Fig. 6. (A) Fabricated InGaAs Quantum Wires in a V Fig. 7. Stranski-Krastanow growth method,
channel of InP and (A) 2D wett layer, (b) increasing the raw side and
(B) AlGaAs quantum wire fabricated by epitaxial breaking, (C) coherent 3D self-assembly
growth on a masked GaAs substrate
5. Sample scanningμntechniques
4. Quantum structure μnfabrication using self-
assembly induced by bending The invention of sample scanning microscopy
(SPM) was a revolution in imaging and spectroscopy at
A more recent mechatronic technique for atomic scale. In particular, scanning tunneling
manufacturing quantum wires and dots involoves self- microscopes (scanning through tunneling) and atomic
assembly induced by bending. „Self-assembly” is a force microscopes (STM and AFM) have applications in
process where a 2D curved system decreases in energy physics, chemistry, materials science and biology. The
by changing a 3D morphology. The combination of ability to perform atomic-scale manipulation,
materials most commonly used in this technique is the lithography and nano-processing using such probes has
In x Ga 1-x As / GaAs system, which offers a large been considered from the beginning and has evolved
network mismatch (7.2% between InAs and GaAs), considerably in the last decade.
although the Ge dots on the Si substrate have attracted Sample scanning microscopy systems involve
attention recently. This method is based on network the controlof the movement of an atomic sharp tip near
mismatch between the epitaxial layer and its substrate, or in contact with a surface with sub-nanometer
resulting in the formation of a multitude of quantum accuracy. Piezoelectric positioning systems are usually
dots and wires. Figure 8 shows a scheme of self- used to achieve such precision. High resolution images
assembly process induced by bending. When the can be obtained by scanning tips over a surface, while
network constants of the substrate and the constants of monitoring the tip-surface interaction.
the epitaxial layer are markedly different, only the first In tunnelling scanning microscopic systems, a
few monolayers deposited epitaxially crystallizes in polarized voltage is applied to the sample and the tip is
curved layers in which network constants are equal. positioned close enough to the surface for a tunneling
When a critical thickness is reached, a current to develop across the hole (Fig. 8a).
significant bending occurs in the layer, resulting in Because this current is sensitive to the distance
breaking the spontaneous formation of ordered between the tip and the surface, scanning the tip in the
structures and spontaneously distributed islands with xy plane while recording the tunneling current allows
regular shapes and similar sizes. This growth is usually drafting surface topography with atomic scale
known as Stranski-Krastanow mode. resolution.
The size, separation and height of the quantum In a more common operation, an amplified
dot depends on deposition parameters (total amount of current signal is connected to the piezoelectric
material deposited, growth rate and temperature) and the positioning system on the z-axis by a reverse loop
combinations of materials. connection, so that the current and the distance are kept
As one can see, this is a very convenient method constant during scanning. In this configuration, the
to grow perfect crystalline nanostructures over a large surface topography image is obtained by recording the
area without lithography or etching. A major drawback vertical position of the tip in each xy position.
of this technique is the random distribution of quantum The STM works only for conductive surfaces
dots. This technique can also be used in the fabrication and establishes a tunneling current. Atomic force
of quantum wires by relaxing the bending at the ends of microscopy, on the other hand, provides a conductive
the phase. surface observation and conducting.
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Systems using beams in console have the Ink staining can be done by dipping the tip in a
advantage that AFM observation and alignment can be solution containing a small concentration of molecules
achieved without exposing the protective layer. followed by a drying step (difluoroetane drying, for
Coatings that are well characterized for electron beam example). Lines with widths of up to 12 nm and spatial
lithography (as PMMA or SAL601) lithography were resolution of 5 nm have been demonstrated with this
used to scan the sample for accurate lithography below technique. Samples shaped with DPN include
100 nm. conducting polymers, gold, dendrimer, DNA, organic
The procedure for this process is as follows. The dyes, antibodies and alcanitiolsi. Alcantiols were used
capsules are cleaned and the native oxide (silicon or as an organic etching mask in a gold monolayer and
poly) is removed with HF dipping. then in the engraving of the exposed silicon substrate.
A coating with a thickness of 35-100 nm is then The beam in cantilever of the AFM can also be used to
deposited on the surface. control the deposition of solid organic ink. This
Exposure is achieved by moving the SPM tip over the technique was recently reported by Sheehan and his
surface while applying a polarized voltage that is large colleagues, where 100 nm lines of octadecilfosforic
enough to produce the emission of electrons from the acid (melting point 100 ° C) were written using a
top (a few tens of volts). sample AFM head.
The protective layer is developed in a standard solution
subsequent to exposure. Features with a thickness of Other techniques nanofabricare by scanning the
more than 50 nm were obtained with this procedure. sample
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obtained with this technique. of the system. In addition to spontaneous thermal self-
Using a single peak to produce in series the assembly, gravitational forces, convection and electro-
desired changes in one area leads to very slow hydro-dynamic forces can also be used to induce
manufacturing processes that are not practical for mass aggregation in complex 3D structures. Chemical self-
production. assembly requires the attachment of a single organic
Many of the techniques developed so far for molecular layer (monolayer self-assembled or SAM) of
scanning the sample, however, could also be reploaced (organic or inorganic) colloidal particles and subsequent
by an area of peaks, which would increase their result self-assembly of these components in a complex
and would make them more competitive with other structure using molecular recognition and binding.
nano-fabrication processes. This way has been
demonstrated for observation, lithography and data Physical self-assembly
storage using both uni-dimensional areas and bi-
dimensional areas of scanned samples. With the This is a method based on the entropy driven by
development of larger areas, with individual advances in the spontaneous organization of colloidal particles in a
force, vertical position and current control, many of relatively stable structure through non-covalent
these techniques can be used in standard industrial interactions. For example, polystyrene colloidal spheres
manufacturing. can be assembled into a 3D structure on a substrate that
is held vertically in the colloidal solution, Fig. 12.
6. Self-assembly and template fabrication After evaporation of the solvent, the spheres aggregate
in a hexagonal closely packed (HCP) structure. The
Self-assembly is a nano-fabrication technique interstitial pore size and density are determined by the
involving nanoparticle colloidal aggregation in the size of the polymer sphere. Polymer spheres can be
desired final structure. This aggregation can be engraved in smaller sizes after the formation of HCP
spontaneous (entropic) and due to minimum surfaces, thereby altering pore printing separations.
thermodynamic value constraints (minimizing energy) This technique can produce large areas modeled
or due to the chemical and complementary binding of in a fast, simple and economic manner. A classic
organic molecules and supra-moleculels (molecular example is the assembly of on-chip natural silicon
self-assembly). Molecular self-assembly is one of the photonic crystals that are capable to reflect the incoming
most important techniques used to develop complex light in any direction over a certain wavelength domain.
functional structures in biology. In this method, a thin layer of colloidal silica spheres
Since these techniques require that the target are assembled on a silicon substrate. This is done by
structures are thermodynamically stable, it is going to placing a vertical silicon capsule in a vial containing an
produce structures that are free from defects and self- ethanolic suspension of silica spheres.
healing. Self-assembly is by no means limited to A temperature gradient over the vial helps pick
molecules or nano scale and can be performed at any up the silica spheres. Figure 13 shows a cross-sectional
scale, as a strong (multi-ordination) manufacturing SEM image of an oval flat thin template assembled
method. directly on the silicon capsule of the 855 nm spheres.
Another attractive feature of this technique Once such a template is prepared, LPCVD can be used
refers to the possibility of combining self-assembly to fill the interstitial spaces with silicon, so that high
properties of organic molecules with electronic, refractive index silicon zones provide the necessary
magnetic and photonic properties of inorganic width.
components. The fabrication of the basic template is
another technique that uses top-bottom deposition (CVD
electroplating, and others) in nano-templates to
manufacture nanostructures. The nano-templates used
in this technique are usually prepared using self-
assembly techniques.
The following sections will discuss various
techniques of self-assembly and production of templates
investigated intensively.
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Chemical self-assembly
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Pore size and depth can be adjusted by a proper multi-band Au-Ag bar code (Ag strips with lengths of
acid corrosion. Porous polycarbonate templates or 60-240 nm that are separated by segments of 550 nm
membranes can be fabricated by etching traces of can be seen). These encoded fnano-particles can be
nuclear membranes. This technique is based on the used in luorescent surfaces and surfaces based on mass
transfer of high energy fragments from a radioactive spectroscopy, allowing a wide variety of bio-analytic
source to a dielectric material. Particles leave behind measures.
traces which can then be chemically active and can
create corroded pores through the membrane. Pores
separation and thus pore density is thus depending on
pore size. The pore density is determined only by the
irradiation.
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