Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 34 W
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V
ICsat Collector saturation current f = 16kHz 4.5 - A
VF Diode forward voltage IF = 4.5 A 1.6 2.0 V
tf Fall time ICsat = 4.5 A; f = 16kHz 0.7 - µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
c
case
1 base

2 collector
b
3 emitter
case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
IB Base current (DC) - 4 A
IBM Base current peak value - 6 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 34 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 2.0 A - - 1.1 V
hFE DC current gain IC = 100 mA; VCE = 5 V 6 13 30
VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
fT Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V 7 - MHz
CC Collector capacitance at f = 1MHz VCB = 10 V 125 - pF
Switching times (16 kHz line ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF
deflection circuit) IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
-IBM = 2.25 A
ts Turn-off storage time 6.5 - µs
tf Turn-off fall time 0.7 - µs

1 Measured with half sine-wave voltage (curve tracer).

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

ICsat + 150 v nominal

TRANSISTOR
IC DIODE adjust for ICsat
t

IB IBend 1mH
t

20us 26us

D.U.T.
64us LB
IBend
VCE
12nF

t -VBB
Fig.1. Switching times waveforms.

Fig.3. Switching times test circuit

ICsat
90 %

IC

h FE BU508AD
100
10 %
tf t
ts
IB
IBend 10

1
0.1 1 10
- IBM IC/A
Fig.2. Switching times definitions. Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

VCESAT / V BU508AD VCESAT/V BU508AD

1 10

0.9

0.8

0.7

0.6

0.5 1

0.4 IC = 6A

0.3

0.2
IC = 4.5A
0.1
IC = 3A
0 0.1
0.1 1 10 0.1 1 10
IC / A IB/A

Fig.5. Typical collector-emitter saturation voltage. Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB VCEsat = f (IB); parameter IC

VBESAT / V BU508AD PD% Normalised Power Derating

1.4 120
with heatsink compound
110
100
1.2 90
80
IC = 6A 70
60
1
IC = 4.5A 50
40
IC = 3A
30
0.8
20
10
0
0.6 0 20 40 60 80 100 120 140
0 1 2 3 IB / A 4 Ths / C
Fig.6. Typical base-emitter saturation voltage. Fig.8. Normalised power dissipation.
VBEsat = f (IB); parameter IC PD% = 100⋅PD/PD 25˚C = f (Ths)

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

Zth K/W bu508ax

10 IC / A
100

0.5
1
0.2 = 0.01
0.1
ICM max
0.05 tp =
0.1
0.02 10 IC max
10 us
0.01 PD tp D=
tp II
0 T

t
T
0.001 Ptot max
1.0E-07 1.0E-05 1E-03 1.0E-01 1.0E+1
t/s 1
100 us
Fig.9. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T

1 ms
I
IC / A
100 0.1
10 ms

DC
= 0.01
ICM max
tp =
10 IC max 0.01
1 10 100 1000
10 us VCE / V
II
Fig.11. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
Ptot max II Extension for repetitive pulse operation.
1
100 us NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.

1 ms
I
0.1
10 ms

DC

0.01
1 10 100 1000
VCE / V
Fig.10. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

MECHANICAL DATA

Dimensions in mm
15.3 max 5.2 max
Net Mass: 5.5 g
0.7 3.1
7.3 3.3 3.2

o
6.2 45
5.8

21.5
max
seating
plane

3.5 max
3.5 not tinned

15.7
min

1 2 3
2.1 max 1.2 0.7 max
1.0
0.4 M 2.0
5.45 5.45

Fig.12. SOT199; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508DF

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1998 7 Rev 1.200