Bipolar Junction Transistor (BJT)

A Bipolar Junction Transistor (BJT) has three terminals connected to three doped semiconductor
regions. In an NPN transistor, a thin and lightly doped P-type base is sandwiched between a heavily
doped N-type emitter and another N-type collector; while in a PNP transistor, a thin and lightly doped
N-type base is sandwiched between a heavily doped P-type emitter and another P-type collector. In the
following we will only consider NPN BJTs.

A transistor’s collector current is proportionally limited by its base current, it can be used as a sort of
current-controlled switch. A relatively small flow of electrons sent through the base of the transistor can
exert control over a much larger flow of electrons through the collector.

Transistor as a Switch
Transistor switches can be used to switch a low voltage DC device (e.g. LED’s) ON or OFF by using a
transistor in its saturated or cut-off state

If the circuit uses the Bipolar Transistor as a Switch, then the biasing of the transistor, either NPN or
PNP is arranged to operate the transistor at both sides of the “ I-V ” characteristics curves we have seen
previously.
The areas of operation for a transistor switch are known as the Saturation Region and the Cut-off
Region. This means then that we can ignore the operating Q-point biasing and voltage divider circuitry
required for amplification, and use the transistor as a switch by driving it back and forth between its
“fully-OFF” (cut-off) and “fully-ON” (saturation) regions as shown below.
Operating Regions

The pink shaded area at the bottom of the curves represents the “Cut-off” region while the blue area to
the left represents the “Saturation” region of the transistor.
 Both these transistor regions are defined as:

1. Cut-off Region
Here the operating conditions of the transistor are zero input base current ( IB ), zero output collector
current ( IC ) and maximum collector voltage ( VCE ) which results in a large depletion layer and no
current flowing through the device. Therefore the transistor is switched “Fully-OFF”.
Cut-off Characteristics

 • The input and Base are grounded

( 0v )
 • Base-Emitter voltage VBE < 0.7v
 • Base-Emitter junction is reverse
biased
 • Base-Collector junction is reverse
biased
 • Transistor is “fully-OFF” ( Cut-off
region )
 • No Collector current flows ( IC = 0 )
 • VOUT = VCE = VCC = ”1″
 • Transistor operates as an “open
switch”

 
Then we can define the “cut-off region” or “OFF mode” when using a bipolar transistor as a switch as
being, both junctions reverse biased, VB < 0.7v and IC = 0. For a PNP transistor, the Emitter potential
must be negative with respect to the Base.

2. Saturation Region
Here the transistor will be biased so that the maximum amount of base current is applied, resulting in
maximum collector current resulting in the minimum collector emitter voltage drop which results in the
depletion layer being as small as possible and maximum current flowing through the transistor.
Therefore the transistor is switched “Fully-ON”.
Saturation Characteristics

 • The input and Base are

connected to VCC
 • Base-Emitter voltage VBE > 0.7v
 • Base-Emitter junction is forward
biased
 • Base-Collector junction is
forward biased
 • Transistor is “fully-ON”
( saturation region )
 • Max Collector current flows
( IC = Vcc/RL )
 • VCE = 0 ( ideal saturation )
 • VOUT = VCE = ”0″
 • Transistor operates as a “closed
switch”

 
Then we can define the “saturation region” or “ON mode” when using a bipolar transistor as a switch as
being, both junctions forward biased, VB > 0.7v and IC = Maximum. For a PNP transistor, the Emitter
potential must be positive with respect to the Base.
Then the transistor operates as a “single-pole single-throw” (SPST) solid state switch. With a zero signal
applied to the Base of the transistor it turns “OFF” acting like an open switch and zero collector current
flows. With a positive signal applied to the Base of the transistor it turns “ON” acting like a closed
switch and maximum circuit current flows through the device.
The simplest way to switch moderate to high amounts of power is to use the transistor with an open-
collector output and the transistors Emitter terminal connected directly to ground. When used in this
way, the transistors open collector output can thus “sink” an externally supplied voltage to ground
thereby controlling any connected load.
An example of an NPN Transistor as a switch being used to operate a relay is given below. With
inductive loads such as relays or solenoids a flywheel diode is placed across the load to dissipate the
back EMF generated by the inductive load when the transistor switches “OFF” and so protect the
transistor from damage. If the load is of a very high current or voltage nature, such as motors, heaters
etc, then the load current can be controlled via a suitable relay as shown.
Basic NPN Transistor Switching Circuit

 
The circuit resembles that of the Common Emitter circuit we looked at in the previous tutorials. The
difference this time is that to operate the transistor as a switch the transistor needs to be turned either
fully “OFF” (cut-off) or fully “ON” (saturated). An ideal transistor switch would have infinite circuit
resistance between the Collector and Emitter when turned “fully-OFF” resulting in zero current flowing
through it and zero resistance between the Collector and Emitter when turned “fully-ON”, resulting in
maximum current flow.
In practice when the transistor is turned “OFF”, small leakage currents flow through the transistor and
when fully “ON” the device has a low resistance value causing a small saturation voltage ( VCE ) across
it. Even though the transistor is not a perfect switch, in both the cut-off and saturation regions the power
dissipated by the transistor is at its minimum.
In order for the Base current to flow, the Base input terminal must be made more positive than the
Emitter by increasing it above the 0.7 volts needed for a silicon device. By varying this Base-Emitter
voltage VBE, the Base current is also altered and which in turn controls the amount of Collector current
flowing through the transistor as previously discussed.
When maximum Collector current flows the transistor is said to be Saturated. The value of the Base
resistor determines how much input voltage is required and corresponding Base current to switch the
transistor fully “ON”.

 Task#1: (RED LED):

The circuit is as follows:
  Procedure:
1. Select a suitable npn transistor and red led.
2. Draw the required circuit for switching characteristics of BJT.
3. Calculate the values of RC and RB using the following formulae:
RC= (VP-VD-VCE(SAT))/IC---------------(1)
RC=(5-2-0.3)/17e-3
RC=158.8 ohms
And
RB=(Vin-VBE)/IB--------------------------------(2)

RB=(5-0.7)/3.4e-4
RB=12647 ohms
4. Use interactive mode of simulation.

 Observation Table:
Current Calculated value Measured value
IC 20 mA(from datasheet) 19.1 mA
17 mA(used for
calculations)
IB 3.4e-4 A 339 micro A

 Results:
 Bipolar transistor type: npn(2N2219)
 VD: 2 V
 VCE(SAT): 0.3 V
 IC* : 19.1 mA
 IB* : 339 micro A
  RC: 158.8 ohms
 RB: 12647 ohms
 Conduction Loss: 34.9 mW

 Task#2:(BLUE LED):
The circuit is as follows:

 Procedure:
1. Select a suitable npn transistor and blue led.
2. Draw the required circuit for switching characteristics of BJT.
3. Calculate the values of RC and RB using the following formulae:

RC= (VP-VD-VCE(SAT))/IC---------------(1)
RC=(5-3.9-0.3)/19.5e-3
RC=41.02 ohms
And

RB=(Vin-VBE)/IB--------------------------------(2)

RB=(5-0.7)/195e-6
RB=22051 ohms
 4. Use interactive mode of simulation.

 Observation Table:
Sr No. Calculated Values Measured Values
IC 20 mA(from datasheet) 17.5 mA
19.5 mA(used for
calculations)
IB 195 micro A 195 micro A

 Results:

 Bipolar transistor type: npn(2N2219)

 VD: 3.9 V
 VCE(SAT): 0.3 V
 IC* : 17.5 mA
 IB* : 195 micro A
 RC: 41.02 ohms
 RB: 22051 ohms
 Conduction Loss: 60.1 mW

 Task#3(GREEN LED):
The circuit is as follows:
  Procedure:
1. Select a suitable npn transistor and green led.
2. Draw the required circuit for switching characteristics of BJT.
3. Calculate the values of RC and RB using the following formulae:
RC= (VP-VD-VCE(SAT))/IC---------------(1)
RC=(5-2.4-0.3)/19e-3
RC=121.05 ohms
And

RB=(Vin-VBE)/IB--------------------------------(2)

RB=(5-0.7)/1.9e-4
RB=22631 ohms

4. Use interactive mode of simulation.

 Observation Table:
Sr No. Calculated Value Measured Value
IC 20 mA(from datasheet) 17.0 mA
19 mA(used for
calculations)
IB 1.9e-4 190 micro A

 Results:

 Bipolar transistor type: npn(2N2219)

 VD: 2.4 V
 VCE(SAT): 0.3 V
 IC* : 17.0 mA
 IB* : 190 micro A
 RC: 121.05 ohms
 RB: 22631 ohms
 Conduction Loss: 36 mW

 Task#4:(YELLOW LED):
The circuit is as follows:
  Procedure:
1. Select a suitable npn transistor and yellow led.
2. Draw the required circuit for switching characteristics of BJT.
3. Calculate the values of RC and RB using the following formulae:
RC= (VP-VD-VCE(SAT))/IC---------------(1)
RC=(5-2.6-0.3)/19e-3
RC=110.52 ohms
And

RB=(Vin-VBE)/IB--------------------------------(2)

RB=(5-0.7)/1.9e-4
RB=22631 ohms

4. Use interactive mode of simulation.

 Observation Table:
Sr No. Calculated Values Measured Values
IC 20 mA(from datasheet) 17.9 mA
19 mA(used for
calculations)
IB 1.9e-4 A 190 micro A
 Results:

 Bipolar transistor type: npn(2N2219)

 VD: 2.6 V
 VCE(SAT): 0.3 V
 IC* : 17.5 mA
 IB* : 190 micro A
 RC: 110.52 ohms
 RB: 22631 ohms
 Conduction Loss: 32.6 mW

 Datasheet of 2N2219 transistor:

 Datasheet of RED LED:
 Datasheet of BLUE LED:
VISMAY. TLHB5400
""‘ " ” Vishay Semiconductors

High Efficiency Blue LED, B 5 mm Tinted Diffused Package

FEATURES

• GaN on SiC technology’

• Standard O 5 mm T-1*- package
• Small mechanical tolerances
• Wide viewing angle
• Very high intensity RoHS
• Luminous intensity categorized
'
• ESD class 1
DESCRIPTION • Material categorization:
for definitions of compliance please see
This device nas Deen redesigned in 1998 replacing SIC Dy GaN
technology to meet the increasing demand for naps efficiency
blue LEDs. APPLICATIONS
It is housed in a 5 mm tinted diffused plastic package • States lights

All packing units are categorized in luminous intensity groups. • Off .* on indicator
That allows users to assemble LEDs with uniform appearance. • Background illumination
• Readout lights
PRODUCT GROUP AND PACKAGE DATA • Maintenance lights
• Legeno light
• Product group: LED
• Package: 5 mm

PARTS TABLE
LUMINOUS INTENSITY at i# FOFIwARD VOLTAGE
PARt C Ot.OH I °*i M TECNNOLOG Y

TLNB5400 Blue 6.3 15 2D 10 3.94. 52o GaN on SiC

ABSOLUTE MAXIMUM RATINGS (T ¿ = 25 °C, unless otherwise specified}

TLHB54OO

AST CONOfTION SYMBOL vauE uniT

Reverse voltage DC v
forward current mA Q
20 A .
Surge forward current
Power dissipation 01
Junction temperature

Operating temperature range 10D

l3torage temperature range
-40to
Soldenng temperature
-100

thermal resistance Iunction-to-ambient -40to-100

35o

Rev 1 B 18 -Au g -2020

Do-cumen I Number 83D19
For technical ques tions. contact. .
 Datasheet of GREEN LED:
 Datasheet of YELLOW LED:
HLMP-4Oxx/HLMP-O8xx
T-13/4,2 mm z 5 mrs Rectangular Bicolor LED Lamps
Data Sheet

Features
The T-1 J/’4 IIL I\'IP-40xx and 2 mm by ci ntm• Two color operation
rectangular HL1P-08xx are three leaded bicoloi”• Three leads with one common cathode

package 'there are two LED chips, mounted on a• Diffused, wide visibility range

Absolute Maximum Ratings at To = 25 C

Parameter HER/Green Yellow/Green Units
Peak Forward Current 90 60 mA
Average Forward Current!’ ’! (Total) 25 20 mA
DC Currently] (Total) 30 20 mA
Power Dissipationl^l (Total) 135 135 mW
Operating Temperature Range -20 to +3 00 -20 ta +100
Storage Temperature Range —55 to +3 00 -55 ta +100
Reverse Voltage (!R - 100 pA) 5 5 V
Transient Forward Currents*! 50fi TOO Ma
(10 sec Pulse)
Notes:
1. See figure 5 to establish pulsed operating conditions.
2. The combined simultaneous current must nol exceed the rTiaximum
3. The combined simultaneous current must nol exceed the rTiaximum
4.The transient peak current is lhe maximum non-recurring current lhat can be applied to lhe device without damaging the LCD die and wirebond.
It
not recommended that the device be operated al peak currents beyond the peaL forward current lisled in lhe Absolute Maximum
Bakings.
 Conclusion:
In this lab, we learnt about the switching behavior of BJT(npn) and we have
learned how to use red,blue,green and yellow LEDs to learn the behaviour of BJT .