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2876 Photovoltaic App Note
2876 Photovoltaic App Note
150
urement considerations, and sources of error.
Current (mA)
∆V
rS =
∆I
Using the Formulator, the conversion efficiency (η) can also Voltage (V)
be calculated if the power input to the cell is known. The current Figure 7. Slope Method Used to Calculate the Series Resistance
density (J) can also be derived using the area of the cell.
Figure 6 shows an actual I‑V sweep of an illuminated silicon An important measurement feature of the system’s SMU as
PV cell generated by the 4200-SCS using the “fwd-ivsweep” ITM. an ammeter is that it has very low voltage burden. The voltage
Because the system’s SMUs can sink current, the curve can pass burden is the voltage drop across the ammeter during the meas-
through the fourth quadrant and allow power to be extracted urement. Most conventional digital multimeters (DMMs) will
from the device (I–, V+). Sometimes it may be desirable to plot log have a voltage burden of at least 200mV at full scale. Given that
I vs. V. The Graph tab options support an easy transition between only millivolts may be sourced to the sample, this can cause large
graphically displaying data on either a linear or a log scale. errors. The 4200-SCS’s SMU never produces more than a few
hundred microvolts of voltage burden, or voltage drop, in the
measurement circuit.
AC HCUR
Source
HPOT
AC Solar
Volt-
meter Cell
LPOT
AC LCUR
Ammeter
Figure 9. Actual Reverse Bias Measurement of Silicon PV Cell Using
4200-SMU
Capacitance Measurements
Figure 10. Connecting the 4200-CVU to a Solar Cell
Using the 4200-CVU
In addition to determining the I‑V characteristics of a PV cell,
capacitance-voltage measurements are also useful in deriv-
C-V Sweep
ing particular parameters about the device. Depending on the C‑V measurements can be made either forward-biased or
type of PV cell, the AC capacitance can be used to derive such reverse-biased. However, when the cell is forward-biased, the
parameters as doping concentration and the built-in voltage of applied DC voltage must be limited; otherwise, the conductance
the junction. A capacitance-frequency sweep can be used to pro- may get too high. The maximum DC current cannot be greater
vide information about the existence of traps in the depletion than 10mA; otherwise, the DC voltage output will not be at the
region. The Model 4200-CVU, the Model 4200-SCS’s optional desired level.
Figure 11 illustrates a C‑V curve of a silicon solar cell gener-
ated by the 4200-CVU using the “cvsweep” ITM. This test was
performed in the dark while the cell was reverse-biased.
C-f Sweep
The 4200-CVU can also measure capacitance as a function of
Figure 11. C‑V Sweep of Silicon Solar Cell frequency. The curve in Figure 13 was generated by using the
“cfsweep” ITM. The user can adjust the range of sweep frequency
Instead of plotting dC/dV, it is sometimes desirable to view as well as the bias voltage.
the data as 1/C2 vs. V. The doping density (N) can be derived
from the slope of this curve because N is related to the capaci-
tance by:
2
N(a) = ______________________
qESA2[d(1/C2)/dV]
Es = semiconductor permittivity
(1.034 × 10 –12F/cm for silicon)
A = area (cm2)
A G R E A T E R M E A S U R E O F C O N F I D E N C E
Keithley Instruments, Inc. ■ 28775 Aurora Road ■ Cleveland, Ohio 44139-1891 ■ 440-248-0400 ■ Fax: 440-248-6168 ■ 1-888-KEITHLEY ■ www.keithley.com
© Copyright 2007 Keithley Instruments, Inc. Printed in the U.S.A. No. 2876 Oct. 07 2k