NTR1P02, NVR1P02

MOSFET – Power,
P-Channel, SOT-23
-20 V, -1 A
Features
• Ultra Low On−Resistance Provides Higher Efficiency www.onsemi.com
and Extends Battery Life
RDS(on) = 0.180 W, VGS = −10 V V(BR)DSS RDS(on) TYP ID MAX
RDS(on) = 0.280 W, VGS = −4.5 V
• Power Management in Portable and Battery−Powered Products −20 V 148 mW @ −10 V −1.0 A

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Mounting Information for SOT−23 Package Provided P−Channel
• NVR Prefix for Automotive and Other Applications Requiring D
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
G
Applications
• DC−DC Converters
• Computers S
• Printers
• PCMCIA Cards MARKING DIAGRAM/
• Cellular and Cordless Telephones PIN ASSIGNMENT
3
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain
1
Rating Symbol Value Unit
2
P2 

M
Drain−to−Source Voltage VDSS −20 V

SOT−23
Gate−to−Source Voltage − Continuous VGS ±20 V
CASE 318
Drain Current A STYLE 21 1 2
− Continuous @ TA = 25°C ID −1.0 Gate Source
− Pulsed Drain Current (tp ≤ 1 ms) IDM −2.67
Total Power Dissipation @ TA = 25°C PD 400 mW P2 = Specific Device Code
M = Date Code
Operating and Storage Temperature Range TJ, Tstg − 55 to °C  = Pb−Free Package
150 (Note: Microdot may be in either location)
Thermal Resistance; Junction−to−Ambient RqJA 300 °C/W
Maximum Lead Temperature for Soldering TL 260 °C ORDERING INFORMATION
Purposes, (1/8″ from case for 10 s)
Device Package Shipping†
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be NTR1P02T1G SOT−23 3000 / Tape & Reel
assumed, damage may occur and reliability may be affected.
(Pb−Free)

NTR1P02T3G SOT−23 10000 / Tape & Reel

(Pb−Free)
NVR1P02T1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

June, 2019 − Rev. 8 NTR1P02T1/D
 NTR1P02, NVR1P02

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
(VGS = 0 V, ID = −10 mA) −20 V
(Positive Temperature Coefficient) 32 mV/°C
Zero Gate Voltage Drain Current IDSS mA
(VDS = −20 V, VGS = 0 V, TJ = 25°C) −1.0
(VDS = −20 V, VGS = 0 V, TJ = 150°C) −10
Gate−Body Leakage Current (VGS = ±20 V, VDS = 0 V) IGSS ±100 nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage VGS(th)
(VDS = VGS, ID = −250 mA) −1.1 −1.9 −2.3 V
(Negative Temperature Coefficient) −4.0 mV/°C
Static Drain−to−Source On−State Resistance RDS(on) W
(VGS = −10 V, ID = −1.5 A) 0.148 0.180
(VGS = −4.5 V, ID = −0.75 A) 0.235 0.280

DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 165 pF
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance Coss 110
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance Crss 35
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time td(on) 7.0 ns
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Rise Time tr 9.0
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Turn−Off Delay Time td(off) 9.0
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Fall Time tf 3.0
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
Total Gate Charge Qtot 2.5 nC
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)

Gate−Source Charge Qgs 0.75

(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Gate−Drain Charge Qgd 1.0
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)

BODY−DRAIN DIODE RATINGS (Note 1)

Diode Forward On−Voltage (Note 2) VSD V
(IS = −0.6 A, VGS = 0 V) −0.8 −1.0
(IS = −0.6 A, VGS = 0 V, TJ = 150°C) −0.6
Reverse Recovery Time trr 13.5 ns
(IS = −1 A, dIS/dt = 100 A/ms, VGS = 0 V)
ta 10.5
tb 3.0
Reverse Recovery Stored Charge QRR 0.008 mC
(IS = −1 A, dIS/dt = 100 A/ms, VGS = 0 V)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.

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2
 NTR1P02, NVR1P02

2.5 2
TJ = 25°C VDS ≥ −10 V TJ = 25°C
2.25 1.75
−ID, DRAIN CURRENT (AMPS)

−ID, DRAIN CURRENT (AMPS)

−4 V
2
−4.5 V −3.5 V 1.5
1.75
1.5 1.25

1.25 1
1 0.75
0.75 −3 V TJ = 125°C TJ = −40°C
0.5
0.5
0.25 0.25
VGS = −2.5 V
0 0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 1 1.5 2 2.5 3 3.5 4
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.45 0.275

0.25 VGS = −10 V

0.4 VGS = −4.5 V
0.35 0.225 TJ = 150°C
TJ = 150°C
0.2
0.3
0.175
0.25
TJ = 25°C 0.15 TJ = 25°C
0.2
TJ = −40°C 0.125
0.15 0.1
TJ = −40°C
0.1 0.075
0.05 0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE

2.5 1000
VGS = 0 V
ID = −1.5 A
2
−IDSS, LEAKAGE (nA)

VGS = −10 V TJ = 150°C

100
(NORMALIZED)

1.5

TJ = 125°C
1
10

0.5

0 1
−45 −20 5 30 55 80 105 130 155 1 3 5 7 9 11 13 15 17 19 21
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature versus Voltage

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3
 NTR1P02, NVR1P02

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

300 6
QT
Ciss TJ = 25°C
250
C, CAPACITANCE (pF)

Crss 4.5
200 VDS

Ciss Q1 Q2
150 3
VGS
100
Coss
1.5
50 ID = −1 A
Crss TJ = 25°C
VDS = 0 V VGS = 0 V
0 0
10 5 0 5 10 15 20 25 0 0.5 1 1.5 2
−VGS −VDS QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS) Figure 8. Gate−to−Source and
Figure 7. Capacitance Variation Drain−to−Source Voltage versus Total Charge

100 1.001
VDD = −15 V VGS = 0 V
0.901
IS, SOURCE CURRENT (AMPS)

ID = −1 A TJ = 25°C
VGS = −5 V 0.801
0.701
t, TIME (ns)

tr 0.601
10 0.501
td(off) td(on)
0.401
0.301
0.201
tf
0.101
1 0.001
1 10 100 2.0E−01 3.0E−01 4.0E−01 5.0E−01 6.0E−01 7.0E−01
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current

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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
E HE T PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b A1 0.01 0.06 0.10 0.000 0.002 0.004
L1 b 0.37 0.44 0.50 0.015 0.017 0.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
L1 0.35 0.54 0.69 0.014 0.021 0.027
A HE 2.10 2.40 2.64 0.083 0.094 0.104
T 0° −−− 10 ° 0° −−− 10°
A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXMG
G
1
3X
2.90 0.90 XXX = Specific Device Code
M = Date Code
G = Pb−Free Package

*This information is generic. Please refer to

3X 0.80 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ G”,
DIMENSIONS: MILLIMETERS may or may not be present.

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:

CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION

STYLE 27: STYLE 28:

PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1

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