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FC FujiElectric Innovating Energy Technology IGBTs, MOSFETS, SiC-Schottky Diodes and IGBT-Drivers Power Semiconductors =< <= So "i viet FC FujiElectric About Type Name PSE Te volage cto: 060400 - 12012007 Y= 3302300" oddone se 1GBT-Seis [hee VSeris/I68TIehsoagy + IGBT development Rated current}, [A] Device type Planar Gate ‘Trench Gate Sedo nei 2. a) BR: PGB (Power nr oa) nen cnena) WSs Sie sui NS The" into inde bid mod with SHGBT SC Say Fre When Dies Assen Gate Suen umber of BT sichs ( hip) 1998 72009 4333 eee a Nie Ss I TMBR.. | TMSR... Se 2. Voltage Classification of modules with Reverse Blocking IGBT 4MBi 300VG-120 R1-50 Yeltage cas ofthe StndardIGBT:T1 812 Voltage clas ofthe ‘y, Bt 46813 Tr fea Boog tat ‘een wo=1700¥ FO Fujielectric 2 Pre-applied Thermal Interface Material (TIM) Optimized for Fuji Electric's Modules The ongoing increase of power den: interface between power module ant ‘optimized thermal distribution. reat sink requires an + Optimized for Fuji Modules + Increase lifetime of IGBT + Advanced IGBT power density Fuji Electric has developed the pre-opplied thermal interface ‘material (TIM) which achieves @ stable quality and reproducible thermal performance level of power electronic devices. Pes TIM provides a significantly low thermal resistonce ond fulfils Qutsourcing of a dirly process the highest quality standards given for power modules to + Stable quality level achieve the longest lifetime and highest system reliability + Increased system reliability The range of modules with TIM is being continually expanding + Higher thermal conductivity For latest availablity status please contact us + Decrease R-value significantly Tol: 702.952.8148 tam arsp@hsoahisesticcom The dedicated suffix for pars with TIM will be -85 instead of -50. Example: Without TIM: 6MBi SOVA-120-50 With TIM: 6MBi 5OVA-120-85 FC Fuji Electric T18T2=600VT18T2=1200V._T18T2=1700V IGBT-Modules for 3-Level-Inverters | saga |a/aisisis FC Fujielectric IGBT Hybrid Modules 7 Sov with SiC-Schottky Barrier Diodes+ ‘Trench FS(V-Sris)—_—_Tranch-FS{¥-Saris) [ ‘TWSR 3508-12090 rises 1050 so 2s sane7030° ler FO Fuji electric PIM IGBTs (Power Integrated Modules) “ronch-F5 (V-Series) ek ona. 1050 on 12050| ek sn 1050, > sn0-2050 FO Fujielectric PIM IGBTS (Power Integrated Modules) with V-Series IGBT MiniSKiiP® Compatible FC Fuji Electric 1200V Trane) PIM IGBTs (Power Integrated Module) / Solder Pins ok 51050 wee 35150 Teak a ee 3505 7s Sonn ‘woarsne 050 001050 7 so 1050 7 S50 e500 7 soe 2050, FO Fujielectric ond 5 (Suis) PIM IGBTs (over nego Modules) /PressFit Contacts Mae 57 1050 FO Fujielectric 6-Pack IGBTs ligh Power | With PressFit Contacts| _ With Solder Pins FO FujiElectric 2-Pack IGBTs i ing, Pin & PressFit Contacts Tench F510 Seis) 10 FO FujiElectric 1- & 2-Pack, V-Series IGBTs | le 600 Then 50 Seis) 1200V Tench 50 Seis) Plano-NPT sie Se "an 2058 081050 ‘01050 m0 1250 W FC Fujielectric 12 1200V 1700V, 3300V Thun) TanbsStSuia) Tanna) (eb eI es “ es ‘i bs . Colttnn Codon ichaioe | ABest High Power Modules 1- & 2-Pack| lc “ru” musa teens ey 600A soe EF GTO mB KHE % [. - 2 Le 800A sane ee mG:TeE aE a i 12008 2G 0 BOGE au NEE 00 ‘wom acme 38 10004. vaows-29 1 ome 12008 azoncrar wm ROBE wa OT 600A BANC BCA mB RE s 240A WBiZONCIA —_RAONCIME —TONEITE & 1200 ‘ame moe 1500 ‘way sma30 ars 24004 SOND WH ReN:MH BROWSE 600A wBsOO- — Wo. 9OOTOE BANE FO Fuji Electric 1200V, 1700V, High Power Modules, 2-Pack & Chopper| lc fawimuusucr _“Rpebaueat’” | Emeteominiual — “Rypetiwean com Sa s ‘am sores é Sra 2600170450 e ‘ern 9008 miu es) aA 650 usar §| ° 9008 unsnor0 = 3 6508 vs. i 900A ‘i soavna120°-50 = ‘a o.8 a Z noon 2 YOO. 7OEA 5 é eee Win Dine es 140A 200i 0078-206 502 4O0VHB- 120-50 Ti 1000.17 0 1000 nr a 14008, Wn S8 wo 70 é - 10008 vse g eT seule 14004 Iwai en. NHS * ‘earn win 1, 1 opium pig (x tid “etn 13 ee 14 FO Fuji Electric te ro cto ‘sarees IPM IGBTs (lnteligent Pover Modules) , V-Series Sa TTT wite Hoh votoge Driver-ic FO Fujielectric Peer soy 1200 cents : IPM IGBTS (Ineligent Power Modules), V-Series Sea Tr BT-Sensor on Chip 15 FO Fujielectric 16 12000 IPM IGBTs (Inieligent Power Modules) , V-Series Tinh) Toemade ara FC Fujielectric AC-Switch with RB-IGBT Chopper (Standard ond High Speed IGBTs) Plna-NPT ah ae Sr 200A nsiz0HH 20150 300A Meise 2050 400% Msisoh2.50 17 FO Fujielectric Discrete IGBTs Wien Fresteding bade Reverse Foss 8 thee "be ae Nasir FC Fuji Electric Super-Junction ‘MOSFET TO-247 TO-3P TO-220 | TO-220F(SLS) | _D2-Pack 189 155m Suffix “FD” Indicates \* r Fos BodyDodetr | 8] [1° al i nd Retonent Topologies cos sos sf z z 2 I Rosen mas. Zama | aw oN ama_| _ fuw 70s oma | _ fww a7Ncost 7051 Tama_|_— fu anveosteD | fb <7Neosi FO 350A 29m | FMW S5N60St Fr 35N60st av 35N6081 xosmo_|/— Faw asnsosiso | Fin 356081 PY 35N6051F0 300A 125M | FAW SON6OST Fu SONOS at 2086051 Pav 208805) 8 2006051" zama_|_Fawaonsosiso | fut goneosiro | furzonsostro | Fw aonosi sD | fa oNsost ro anon 160m | FMW ZIN6OS1 Fr anos) ar 2286051 av 228605) a 22N6051* oma | faw2ancosiro | fun aansosiro | Frzansosiro | fu zansosiro | ma zaNsosiro* goon me | FMW 20N60st ri 20N6ost ur 2096051 uv 2086051 a 2086081" 200m | fw 20néos1ro. | fusizoNsosiro | ue zoncosieD | uvaowéasis | fun zoweasi D+ 280m ar 1386051 av 19N6051 fab 13N6051° 130A 100A | 380ma a? 1onéos) av 1oNeos1 aa 1oxéosi* ie “470.m6 ‘FMP OBN6OST FMy 1 ® sN6OSI* aoa [270m anos aNéos 8 OBNSOS esa s80ma ar O75 av O78) aa o7séosi* coro a FC FujiElectric Silicon Carbide (SiC) Schottky Barrier Diodes 18A | Focr 18s 120 FOCA 185120 Focy 184120 20 FC Fujielectric Plug & Play Drivers for Fuji Electric's IGBT Ig &S 2-Pack IGBT, Pin-Type 2-Pack, High Power Modules iS concsPr «soz concer 2sponst CONC=Py ISSN Demin (psn OE levi Stes pistes Sever Seventy Sevecnye 1 Pack, High Power Modules ont ae 18 CONCEPT ors Drs yer Sse Homans 2-Pack, High Power Modules foe oS eS be > concsPt zsren20 (bros Pr cr See Senne OD AMR Foc dt place contact spp dec CORCEPT # wright drivarcom 21 FO Fuji Electric Notes FO Ful ect 9 ee oy. t ten em omones aot om Power Semiconductors Group apsieww iwccompecuceemcndic! 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