SKM 100GB125DN

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Symbol Conditions Values Units
IGBT
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Characteristics ( 3 -4 5$  
 




    
    Symbol Conditions min. typ. max. Units







IGBT
      

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1 02-08-2012 DIL © by SEMIKRON

SKM 100GB125DN
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
6! 3 62$ !  3 C4 %= 6;2 3 + 6 (7 3 -4 5$
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This is an electrostatic discharge sensitive device (ESDS), international standard

      
 IEC 60747-1, Chapter IX.
      
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  component characteristics. Components have to be tested for the respective
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2 02-08-2012 DIL © by SEMIKRON

SKM 100GB125DN
Zth
Symbol Conditions Values Units
Zth(j-c)l
1 3* A4 /MN
1 3- 4 /MN
1 3H *C4 /MN
1 3E -4 /MN
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3 02-08-2012 DIL © by SEMIKRON

SKM 100GB125DN

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

4 02-08-2012 DIL © by SEMIKRON

SKM 100GB125DN

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic

Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge

5 02-08-2012 DIL © by SEMIKRON

SKM 100GB125DN
UL Recognized File 63 532

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6 02-08-2012 DIL © by SEMIKRON