figure.

Note that the IV characteristics of solar cell is drawn in the fourth quadrant of the
coordinate axes. This is because a solar cell does not draw current but supplies the same to
the load. Important criteria for the selection of a material for solar cell fabrication are:
(i) band gap (1.0 to 1.8 eV) (ii) optical absorption
(iii) electrical conductivity (iv) availability of the raw material
(v) cost

QUESTIONS
1. On increasing temperature the specific resistance of a semiconductor
(A) decreases (B) increases (C) remains constant (D) becomes zero
2. Wires P and Q have the same resistance at ordinary (room) temperature. When heated,
resistance of P increases and that of Q decreases. We conclude that -
(A) P and Q are conductors of different materials
(B) P is N-type semiconductor and Q is P-type semiconductor
(C) P is semiconductor and Q is conductor
(D) P is conductor and Q is semiconductor
3. Those materials in which number of holes in valence band is equal to number of electrons in
conduction band are called
(A)conductors (B) Intrinsic semiconductors
(C) p-type semiconductors (D) n-type semiconductors
4. Which of the following statement is wrong
(A) Resistance of extrinsic semiconductors can be changed as required
(B) In n-type semiconductor the number of electrons increases in valence band
(C) In p-type semiconductors the number of holes increases in valence band
(D) In pure semiconductor fermi band is situated in between the valence band and conduction
band
5. P-type semiconductor is formed when -
a. As impurity is mixed in Si
b. Al impurity is mixed in Si
c. B impurity is mixed in Ge
d. P impurity is mixed in Ge
(A) a and c (B) a and d (C) b and c (D) b and d
6. In extrinsic semiconductors -
(A) The conduction band and valence band overlap
(B) The gap between conduction band and valence band is more than 16 eV
(C) The gap between conduction band and valence band is near about 1 eV
(D) The gap between conduction band and valence band will be 100 eV and more
7. The electron mobility in N-type germanium is 3900 cm2/v.s and its conductivity is 6.24
mho/cm, then impurity concentration will be if the effect of cotters is negligible -
(A) 1015 cm3 (B) 1013/cm3 (C) 1012/cm3 (D) 1016/cm3
8. A potential Barrier of 0.2 V exists across a p-n junction. A uniform electric field of magnitude
106 V/m exists in depletion region. The width of depletion region is
(A) 4 × 10–7 m (B) 0.1 mm (C) 2 × 10–7 m (D) 20 m

9. The energy of a photon of sodium light (  = 5890Å) equals the band gap of a semiconductor.
The minimum energy required to create an electron-hole pair is
(A) 0.026 eV (B) 0.31 eV (C) 2.1eV (D) 6.4 eV

9
10. The approximate ratio of resistances in the forward and reverse bias of the PN-junction diode
is -
(A)102 : 1 (B) 10–2 : 1 (C) 1 : 10–4 (D) 1 : 104
11. In the given figure, which of the diodes are forward biased ?

1. 2. 3. 4.

5.
(A) 1, 2, 3 (B) 2, 4, 5 (C) 1, 3, 4 (D) 2, 3, 4
12. In which of the following figures the junction diode is in reverse bias

(A) (B) (C) (D)

13. Current in the circuit will be -

5 5 5 5
(A) A (B) A (C) A (D) A
40 50 10 20
14. Reading of Ammeter in following circuit
6
4
3
A

5V
5 5 1 5
(A) A (B) A (C) A (D) A
6 7 2 4
15. In the given circuit & are–
Si
4.7 k
12 V V02
V01
Ge

(A) 11.3 V & 0.3 V (B) 0.3 V & 11.3 V (C) 11.3 V & 11.3 V (D) 0.3 V & 0.3 V
16. If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the
ripple will be -
(A) 50 Hz (B) 70.7 Hz (C) 100 Hz (D) 25 Hz

10
17. In the half-wave rectifier circuit shown. Which one of the following wave forms is true for VCD,
the output across C and D?

(A) (B) (C) (D)

18. Two identical p-n junction may be connected in series with a battery in three ways (fig). The
potential drops across the p-n junctions are equal in –
P N N P P N P N N P N P

+ – + – + –
1 2 3
(A)circuit 1 and 2 (B) circuit 2 and 3 (C) circuit 3 and 1 (D) circuit 1 only
19. Given below are four logic gate symbol (figure). Those for OR, NOR and NAND are respectively
-

(A) 1, 4, 3 (B) 4, 1, 2 (C) 1, 3, 4 (D) 4, 2, 1

20. The following truth table corresponds to the logic gate -

A 0 0 1 1
B 0 1 0 1
X 0 1 1 1
(A) NAND (B) OR (C) AND (D) XOR
21. For the given combination of gates, if the logic states of inputs A, B, C are as follows A = B = C
= 0 and A = B = 1, C = 0 then the logic states of output D are -

(A) 0, 0 (B) 0, 1 (C) 1, 0 (D) 1, 1

22. This symbol represents -

(A) NOT gate (B) OR gate (C) AND gate (D) NOR gate

11
23. In the circuit below, A and B represent two inputs and C represents the output.
A

The circuit represents

(A) AND gate (B) NAND gate (C) OR gate (D) NOR gate
24. The logic circuit shown below has the input waveforms ‘A’ and ‘B’ as shown. Pick out the
correct output waveform.

Output is -

(A) (B)

(C) (D)
25. There is a gate with two inputs A and B, and one output Y. Using the input and output wave
forms identify the gate
1
A0
1
B0
1
Y0
(A)NAND (B)NOR (C)EXCLUSIVE-OR (D)AND

ANSWER
1. A 6. C 11. B 16. C 21. D
2. D 7. D 12. B 17. B 22. A
3. B 8. C 13. B 18. B 23. C
4. B 9. C 14. C 19. C 24. A
5. C 10. D 15. A 20. B 25. C

12