s FPOWITEIHMil-< MALAYSIA‘ BAHAGIAN PEPERIKSAAN DAN PENILAIAN JABATAN PENGAJIAN POLITEKNIK KEMENTERIAN PENDIDIKAN MALAYSIA. JABATAN K’GJURUTERAAN ELEKTRIK PEPERIKSAAN AKHIR. SES! DISEMBER 2013 EE201; SEMICONDUCTOR DEVICES TARIKH : 14 APRIL 2014 TEMPOH : 8.30 -10.30 AM (2 JAM) Kertas ini mengandungi LAPAN BELAS (18) halaman bercetak. Bahagian A: Objektif (20 soalan) Bahagian B: Struktur (10soalan) Bahagian C: Bsei (2 soalan) = ~ Dokumen sokongan yang disertakan ; Tiada JANGAN BUKA KERTAS SOALAN INI SEHINGGA DIARAHKAN (CLO yang tertera hanya sebagai rujukan)SULIT E201: SEMICONDUCTOR DEVICES ECTION A : 20 MARKS A cLo1 cl cLol c2 INSTRUCTION: This section consists of TWENTY (20) objectiv: questions, Mark your answers in the OMR form provided. ARAHAN : Bahagian ini mengandungi DUA PULUH (24) siralan objektif: Tandakan jawapan anda di dalam borang OMR yang disecliakan 1 Define a semiconductor in its pure form. Tentukan separuh pengatir dalam bentuk tulin A, Intrinsic semiconductor Separuh pengatir Intrinsik B. Extrinsic semiconductor Separuh pengalir Ekstrinsik C. Patype semiconductor Separuh pengalir jens p D. Naype semiconductor Separuh pengatirjenis n 2. The purpose of a pentavalent impurity is to Kegunacn bendasing yang mempunyai lima ele ttron valensi ialah untuk A. Reduce the conductivity of semicondvs.tor Mengurangkan pengaliran elektrik se para pengalir B. Increase the nu:nber of holes Meningkatkan bilangan lubang C. Increase the :iuumber of free electrons Meningkatke n bilangan elektron-elehtron hebas D. Create mino sity carriers Mewujudkan pembawa minoriti 2 suLirsuLIT EE201: SEMICONDUCTOR DEVICES cLol C2 4, Dinde resistance is very large avid it does not allow current to flow through it. This stale indicates the diode i Rintangan diod adalah sangai tinggi dan menghalang arus mengalir melatuinya. Ini ‘menunjukkan diod dalam keadean AL 1 good diode Diod baik fan open diode Diod terbuka a shorted diode Diod terpintas a saturated diode Diod tepra Which of the following diode is operated in reverse bias mode ? “Antara diod berikut yang manakah dikendalikan dalam keadaan pincang s ongsang? A P-N Junction Simpang P-N Zener diode Diod Zenzr ‘Tunnel Terowong, . Schottky Schoutky 3 suuirCLOL C3 the correct output for th ” Rajah AS menuajukkan litar penghad siri keiuaran litar yang betul? % Figure AS/ Rajah AS Mes) ONO TU DEVICES 5. Figure AS shows the clipper circuit in series with biased, Which of the following is Antara yang berikut yang manakah go v % Rg ‘ee 4 suLItSULIT E201; SEMICONDUCTOR DEVICES “LOL [6 Mate the fimetion of = photsdiods ie Padankan fuaigat bag rc A. Asaregulator / selragai peratur B. Asan indicator/ sebagai peanda | C. Asa light detzetor / sebagaiengesan eahaya i D. Asatemperature sensor / s¢® gai sensor suk tol 7 Select the beta «aurrent ratio. 2 Pilih nisbah arus beta f A. te p Cte/e B. in/Is De ols cuo1 8 Identify the fumetion of an emitter configuration : : < “Kenelpast fingsi perintang pengeluar dal Konfigurasi CE l A. AC Signal bypass I Isyarat piraw A.) | B. Collector bias ' Pincang Pemungst CC. Higher gain : Gandaan Tertingsi ) D. Stabilization PenstabilancLo2 C2 SULIT EE201: SEMICONDUCTOR DEVICES | }9 The configuration of transistor in Figure A10 is ie Input Output Bee a Figure A9/ Rajah AD | A. Common Base Configuratioz: Sambungan Tapak Sepuaya B. Common Collector Configuration Sambungan Pemungut Seprunya C. Common Emitter Configguration Sambungan Pemancar ‘iepunya D. Common Common Covitiguration Sambungan Sepunva Sepunya 6 SULITCLOL a 10 cL Figure A10/ Rajah A10 Based on the frequency response curve in Figure A1, match the numbering with the comeet parameter, Berdasarkan lengkung sambutan frekuensi pada Rejeh 1, suaipadan nombor dengan parameter yang betul. A. | Frequency Frekuensi B, | Bandwidth Jalur lebar cutoff frequency | Frekuensi | potongan tinggi ; Bandwidth Jalurlebar | \ reuboff | | frequency | Frekuensi eeioieaninee! | Lower cut-off frequency Freiuensi | Gancaan Lower cut-off | Gain potengan rendah E | B: Vv frequency. Gandaan Frekuersi potongan rendah Frequency | Gandaan Frekuensi Frequency | Bandwidth | Frekuensi Jalur lebar ~| Frequency Frekuensi andwidth Joly lebar SULITSULIT E201; SEMICONDUCTOR DEVICES cLor 11 How many amplifiers are requived! to imp this equation, Vou = Vix Va Cc. t Untuk penguat pelbogai peringkat, berapa banvak penguat ang diperlukan untuk r melaksanakan versamaan Vow = Vix V2, r A2 : Bod r a3 D4 ) chor 12. Based on Figure A13 , nate the circuit. c2 Berdasarkan kepada Rajah A13, namakan liar berienaan. Figure A12; Rajah A12 A. Darlington Pair / Pasangan Darlington ———_B. Transformer Coupling / Gandingan ’engubah ©. Direct Coupling / Gandingan Terus D. RC Coupling / Gandingan RC suLITSULIT £201: SEMICONDUCTOR DEVICES croe 3A certain multistage amplifier has an open 100” WUE 150,000. Express C2 this gain in dt 2 q Satu penguat pelbagai peringkat mempunyai gandaan voltars gels buka ‘sebanyak 150,000. Nyatakan nitai gandaan ini dalam dB? 4 A. 51.74B ] B. 103.5dB fl C, 150,000dB D. 5.18dB r cLo2 | 14. Diagram A1Sshows two stages amplifier connected in caseade. Calculate the input at | C3 Panett stage (V1) if the output at the tind stage (V3) is 32Vims and that the voltage gain of each stage is Ay ~ An = 40. Rajah AIS menunjukkan dua peringkat pengvat disambung, seer! lata, Kira Raia an pada peringkat pertama (V1) jika kelvoran kepada peringkat Aetiga adalah |) evn den gandaan voltan setiap peringkat acalah Ay = Aa = 40. \ ‘i / é SEE eee ae | j ow 1 Diagram Al4/ Rajah A14 A, 20mVems B, 1600Vrms C, 32Vims 1D. 3200Vrms 9 suLITcLo cl SULIT EE201: SEMICONDUCTOR DEVICES 15. Which of the foilowing is the schematic symbol of JPET? SE EEEEEEEEEEEEEEEEEE EERE — B. D. Ng 16. Figure A17 shows the physical structure of : Rajah Al? menunjukkan soruktur fizikal untuk: C. DE-MOSFET, P-Channel DE-MOSFET, Saluran P D. DE-MOSFET, N-Channel DE-MOSFET, Saluran N to SULITsur ‘E201: SEMICONDUCTOR DEVICES an example of ag cLol MOSFET rogem poningkatan yang beroperasi pada keadaan potong atau Kawasan ohmik ialah contoh #4 A three terminal device | Perami pangkalan tiga ‘ Anractive load Beban aktif ©. A passive load Beban pasif D. Aswitching device ] Peranti pensuisan 18,The SCR can be triggered on by a pulse at the SC. boleh dipicu melalui denyut pada A. Gate / Get f | |. Anode / Anod . Cathode / Katod fy] ). None of the above / Tiada satu pun diatas pay n SULITCLOL cL 19, E201; SEMICONDUCTOR DEVICES Which physical structure represent DIAC? Taka pany mewanal DEA ease o THRE BAR ome » eo hse 2 SULITSULIT E201: SEMICONDUCTOR DEVICES CLO2 —|20 Figure A20 below shows an application of a DIAC. Identify the circuit, cl Raja Azo at Penwa mien ir sate ap iF 4 HEATER : AG SUPPLY Cyt ack CHOKE, = 1m — Figure A20 / Rajah A20 A, Lamp Dimmer / Pemalap lampu B, Neyative resistance / Rintangan negatif C. Heat control / Kawalan haba D. High-power lamp switch / Suis lampu kuasa tinggi a suLiTSULIT 1201; SEMICONDUCTOR DEVICES IN B= 30 MARKS oe cLo2 3 cLOr cl cLo1 clot cl INSTRUCTION: This section consists of TEN (10) structured questions, Answer ALL questions. ARABAN: Bahagicn ini mengandungi SEPULUH (10) soalan berstruktur. Jawab semua soalan QUESTION 1 With the aid of a diagram, sketch and labe! the atomic structure of copper (Cu) vhieh has 29 atomic number. SOALANI Dengan bants.an gambarajah,lukis dan labelkan struktur atom bagi kuprum Cu’ yang ‘mempunyai 29 nombor ator. (3 marks) [3 markah QUESTION 2 Draw and Iabel diode as full-wave rectifier SOALAN2 Lukis dan labelkan eplikasi bagi penerus gelombang penuh. a ' ve [3 marks] [3 markah) QUESTION State THREE (3) advantages of LED in electronic cirouit. SOALAN3 Nyatakan TIGA (3) kelebihan LED dalam tar elekeronth [3 marks} [3 markah] QUESTION 4 Draw a schematic symbol for PNP and NPN transiste’ SOALAN4 Lukiskan simbol skematik bagi transistor jenis PN? dan NPN. [B marks} [3 markah) “ SULITsuLIT [EE201: SEMICONDUCTOR DEVICES LO1_| QUESTION St amplifier ciret SOALANS P ‘Berikan fungsi perintang pemancar Re dan kapasitor selari Ce, di dalam litar penguat pemencar sepunya [3 marks} [3 markah} CLOI | QUESTION 6 : C3 | Complete the following table SOALAN6 Lenzkapkan jadual di bawah I ft J [3 marks} 1B markah) 1 u cLol | QUESTION 7 : c2 Describe the basic difference between a D-MOSFET and an E-MOSFET. ] SOALAN7 Terangkan perbezaan asas antara D-MOSFET dat E-MOSFET. } (3 marks} U (3 markah] ] cho2 | QUESTION 8 C2 | Differentiate between NMOS and PMOS. ] SCALAN8 | Bandingkan di antara NMOS dan PMOS (3 marks} | [3 markah) | cLo2 | QUESTION 9 | C1, | State TWO (2) ways to stop an SCR operation U SOALAN9 } ‘Nyatakan DUA (2) cara untuk menghentikan opwrasi SCR. | {3 marks} {3 markah} ty (SLE citerSULIT BE2O1: SEMICONDUCTOR DEVICES cLor | QUESTION 10 n aCe tint onaet FORE J SOALAN 10 ‘ Senaraitan TIGA (3) kegunian TRIAK di dalam tar elektronik ] (B marks) [3 markah) cLo2 c2 clo2 C3 cLo2 SECTION C : 50 MARKS. BAHAGIAN C: 50 MARKAH INSTRUCTION: This section vonsists of TWO (2) essay’ questions. Answer ALL, questions, ARAHAN: Bahagian ini mengandungi DUA (2) soalan esei. Jawab SEMUA soatan. QUESTION 1 SOALAN I (@) Explain the meaning of reverse biased voltage supplied across a P-N junction. Draw the appropriate diagram. Jelaskan maksud voltan pincang songsang yang dibekalkcan merentasi simpang P-N, Lukiskan gambarajah yang sesuai [5 marks} [5 markah] (b) There are TWO (2) types of biasing in a diode, By using « bulb, construct the schematic diagram and explain each of them accordingly. Terdapat DUA (2) jenis pincangan bagi sebuah diod. Den,zan menggunakan bulb bina gambarajah skematik yang sesuai dan terangkan, [6 marks] (6 markahi) (6) Mlustrate a complete I-V characteristic curve for a diode, Lakarkan dengan lengkap ciri lengkung I-V bagi sebuah dod. [4 marks} [4 markahy 16 suLITSULIT BE 201: SEMICONDUCTOR DEVICES [1 markahi) SULIT a on kath forthe Configurs £Figuse Cl Given the value of s c3 B= 212 and VBE = 0.7 V. Kirakan item- item di bawah bagi litar rajah C1. Diberi nilai of B= 212 dan VBE = 0.7 V. i Ie (3 marks] (3 markah] ii, Ico (4 marks] {4 markah] iii, Vee [3 marks] (3 markal) ¢ Voo= SV, z z EF re : Ry=100Ka { rey Re= 1000 | Eo fp=212 [or acio7 n In lhe u Figure Cl Rajah CI | | QUESTION 2 u SOALAN 2 = | CLO? | (@) Define Multistage Amplifier u cl Takrifkan Penguat Pelbagai Peri igkat {2 marks} (2 markah) (b) By referring to Figure C2, ‘ Dengan berpandukan Rajah C2, } cLo2 i) Name the circuit network ‘ os Namakan litar berkenaa + [I mark] |CLO2 2 cLo2 C2 = (©) Draw the physical s SULIT RE201: SEMICONDUCTOR DEVICES CLO2 a1 Cie Oy fimcrh Ri U ACHAT network in (b) 1) Berikan DUA (2) fings: livar dalam (9) i) (2 marks) [2 markah Figure C2 / Rajah C2 () With the aid of a diagram, explain the operation of Darlington Pair circuit Dengan menggunakan gar "barajah, ferangkan operasi liar bagi Pasangan Dar ington, | [5 marks] Bi markah) (@) Using a suitable diagram, e plain the operation in E-MOSFET, Pengan menggunakan rajesh yang bersesnaian, jelaskan kendatian E-MOSF! [10 marks) [10 martah} ‘are of Silicon-Controlled Rectifier (SCR). Lukiskan strukeur fiike! untuk Silicon-Controtled Rectifier (SCR), 15 marks] {5 markah SOALAN TAMAT. SULIT