BAV99

Discrete POWER & Signal

Technologies

BAV99

CONNECTION DIAGRAM
3 3
3

A7
2
1 2 1 2
SOT-23 1

High Conductance Ultra Fast Diode

Sourced from Process 1P.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

W IV Working Inverse Voltage 70 V
IO Average Rectified Current 200 mA
IF DC Forward Current 600 mA
if Recurrent Peak Forward Current 700 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second 1.0 A
Pulse width = 1.0 microsecond 2.0 A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

BAV99
PD Total Device Dissipation 350 mW
Derate above 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W

1997 Fairchild Semiconductor Corporation

This datasheet has been downloaded from http://www.digchip.com at this page

 BAV99
High Conductance Ultra Fast Diode
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

BV Breakdown Voltage I R = 100 µA 70 V
IR Reverse Current VR = 70 V 2.5 µA
VR = 25 V, TA = 150°C 30 µA
VR = 70 V, TA = 150°C 50 µA
VF Forward Voltage I F = 1.0 mA 715 mV
I F = 10 mA 855 mV
I F = 50 mA 1.0 V
I F = 150 mA 1.25 V
CO Diode Capacitance VR = 0, f = 1.0 MHz 1.5 pF
TRR Reverse Recovery Time I F = IR = 10 mA, IRR = 1.0 mA, 6.0 nS
RL = 100Ω
VFM Peak Forward Voltage I F = 10 mA, tr = 20 nS 1.75 V

Typical Characteristics

50 0 05 1N4150 MMBD1201 1205

REVERSE VOLTAGE vs REVERSE CURRENT REVERSE CURRENT vs REVERSE VOLTAGE
BV - 1.0 to 100 uA IR - 10 to 100 V
IR - REVERSE CURRENT (nA)

150 300 Ta= 25°C

VRR - REVERSE VOLTAGE (V)

Ta= 25°C
250
140
200

150
130
100

120 50
0
10 20 30 50 70 100
V

110 VR - REVERSE VOLTAGE (V)

1 2 3 5 10 20 30 50 100 GENERAL RULE: The Reverse Current of a diode will approximately
I R - REVERSE CURRENT (uA) double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE vs FORWARD CURRENT

VF - 1.0 to 100 uA VF - 0.1 to 10 mA
485 725
VVFF - FORWARD VOLTAGE (mV)

VVFF - FORWARD VOLTAGE (mV)

Ta= 25°C Ta= 25°C

450 700

400 650

600
350

550
300
500
250
225 450
1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10
I FIF - FORWARD CURRENT (uA) IF - FORWARD CURRENT (mA)
 BAV99
High Conductance Ultra Fast Diode
(continued)

Typical Characteristics (continued)

FORWARD VOLTAGE vs FORWARD CURRENT CAPACITANCE vs REVERSE VOLTAGE

VF - 10 - 800 mA
1.5
VR - 0.0 to 15 V
VFF - FORWARD VOLTAGE (V)

Ta= 25°C 1.3

1.4 Ta= 25°C

CAPACITANCE (pF)
1.2
1.2

1.1
0.8

0.6 1
10 20 30 50 100 200 300 500 0 2 4 6 8 10 12 14 15
IF - FORWARD CURRENT (mA) REVERSE VOLTAGE (V)

REVERSE RECOVERY TIME vs REVERSE CURRENT Average Rectified Current (Io) &
TRR - IR 10 mA vs 60 mA Forward Current (I F) versus
4
Ta= 25°C
Ambient Temperature (TA)
REVERSE RECOVERY (nS)

PD - POWER DISSIPATION (mW)

500 IR
3.5 -F
OR
WA
3 400 R D
CU
R RE
2.5 300 NT
ST
EA
Y D
2 Io - A ST
200 VERA AT
GE R E
ECTIF -m
1.5 IE D C A
URR
E NT
100 - mA
1
10 20 30 40 50 60
REVERSE CURRENT (mA) 0
0 50 100 150
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
TA - AMBIENT TEMPERATURE ( o C)

POWER DERATING CURVE

500
PDD - POWER DISSIPATION (mW)

400
DO-35 Pkg

300

SOT-23 Pkg
200

100
P

0
0 50 100 150 200
IO - AVERAGE TEMPERATURE ( oC)