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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION ORDERING INFORMATION

The 2SK3053 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE
designed for high current switching applications in consumer
2SK3053 Isolated TO-220
instruments.

FEATURES
• Low On-State Resistance
RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) (Isolated TO-220)
• Low Ciss : Ciss = 790 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, −10 V
Drain Current (DC) ID(DC) ±25 A
Note1
Drain Current (Pulse) ID(pulse) ±75 A
Total Power Dissipation (TC = 25°C) PT 30 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note2
Single Avalanche Current IAS 12.5 A
Note2
Single Avalanche Energy EAS 15.6 mJ

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

! 2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D12912EJ3V0DS00 (3rd edition)

The mark ! shows major revised points. © 1999, 2000
Date Published May 2001 NS CP(K)
Printed in Japan
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ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 13 A 28 45 mΩ

RDS(on)2 VGS = 4.0 V, ID = 13 A 46 70 mΩ

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 13 A 8.0 16 S

Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA

Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Input Capacitance Ciss VDS = 10 V 790 pF

Output Capacitance Coss VGS = 0 V 240 pF

Reverse Transfer Capacitance Crss f = 1 MHz 100 pF

Turn-on Delay Time td(on) ID = 13 A 20 ns

! Rise Time tr VGS = 10 V 200 ns

Turn-off Delay Time td(off) VDD = 30 V 65 ns

Fall Time tf RG = 10 Ω 95 ns

Total Gate Charge QG ID = 25 A 20 nC

Gate to Source Charge QGS VDD = 48 V 3.0 nC

! Gate to Drain Charge QGD VGS = 10 V 6.5 nC

Body Diode Forward Voltage VF(S-D) IF = 25 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 25 A, VGS = 0 V 40 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 45 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY ! TEST CIRCUIT 2 SWITCHING TIME

D.U.T.
D.U.T.
RG = 25 Ω L
RL VGS
PG. VGS 90 %
50 Ω VDD Wave Form 0
10 %
RG
VGS = 20 → 0 V PG. VDD
ID 90 %
90 %
IAS BVDSS ID
VGS 10 %
VDS ID 0 10 %
ID 0 Wave Form

VDD τ td(on) tr td(off) tf

τ = 1 µs ton toff
Starting Tch Duty Cycle ≤ 1 %

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

2 Data Sheet D12912EJ3V0DS

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TYPICAL CHARACTERISTICS (TA = 25 °C )

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
35
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

30
100

25
80
20
60
15
40
10
20 5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C TC - Case Temperature - ˚C

! FORWARD BIAS SAFE OPERATING AREA

1000

100 PW
ID - Drain Current - A

=1
d ID(pulse) 0µ
ite s
im 0 V)
)L 1
10
0µ
(on 10
DS GS = 0m s
R V ID(DC) s
(at 1m
10 s
Po 10
we m
rD s
iss
ipa
tio
nL
1 im
ite
d

TC = 25˚C
Single Pulse
0.1
0.1 1 10 100
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - ˚C/W

100
Rth(ch-A) = 62.5 ˚C/W

10
Rth(ch-C) = 4.17 ˚C/W

0.1

Single Pulse
0.01
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D12912EJ3V0DS 3

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DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE
1000 Pulsed

100
ID - Drain Current - A

100

ID - Drain Current - A
80

VGS =10 V
10 60

TA = −50˚C 40
25˚C 4.0 V
1 75˚C
150˚C
20

VDS = 10 V Pulsed
0.1 0
0 1 2 3 4 5 0 1.0 2.0 3.0 4.0
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE
75
| yfs | - Forward Transfer Admittance - S

100 VDS = 10 V Pulsed

Pulsed

10 50
TA = 150˚C
75˚C
25˚C ID = 13 A
−50˚C
1 25

0.1 0
0.1 1 10 100 0 10 20

ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE THRESHOLD VOLTAGE vs.

RDS(on) - Drain to Source On-state Resistance - mΩ

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(th) - Gate to Source Threshold Voltage - V

Pulsed VDS = 10 V
75 ID = 1 mA
2.0

1.5
50
VGS = 4.0 V
1.0
10 V
25
0.5

0 0
0.1 1 10 100 −50 0 50 100 150

ID - Drain Current - A Tch - Channel Temperature - ˚C

4 Data Sheet D12912EJ3V0DS

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RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE
CHANNEL TEMPERATURE FORWARD VOLTAGE
1000
Pulsed
80

ISD - Diode Forward Current - A

VGS = 4.0 V 100
60
VGS = 10 V

10 V 10 VGS = 0 V
40

20 1

ID = 13 A
0 Pulsed
−50 0 50 100 150 0.1
0 0.5 1.0 1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO SWITCHING CHARACTERISTICS

SOURCE VOLTAGE
10000 1000
VGS = 0 V

td(on), tr, td(off), tf - Switching Time - ns

f = 1 MHz tr
Ciss, Coss, Crss - Capacitance - pF

1000 Ciss 100

td(off)

tf td(on)
Coss
100 10
Crss

10 1
0.1 1 10 100 0.1 1 10 100

VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAIN CURRENT
1000 80 16
di/dt = 100 A/µs
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns

VGS - Gate to Source Voltage - V

VGS = 0 V

60 VDD = 48 V 12
100 30 V
12 V VGS
40 8

10
20 4

VDS ID = 25 A
1 0
0.1 1.0 10 100 0 4 8 12 16 20 24 28 32
IF - Drain Current - A QG - Gate Charge - nC

Data Sheet D12912EJ3V0DS 5

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! SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 160
VDD = 30 V
RG = 25 Ω
IAS - Single Avalanche Current - A

140
VGS = 20 V → 0 V

Energy Derating Factor - %

IAS ≤ 12.5 A
IAS = 12.5 A 120
10 EAS 100
=1
5.6
mJ
80

60
1
40
VDD = 30 V
VGS = 20 V → 0 V 20
RG = 25 Ω
Starting Tch = 25˚C
0.1 0
10 µ 100 µ 1m 10 m 25 50 75 100 125 150

L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C

6 Data Sheet D12912EJ3V0DS

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PACKAGE DRAWING

Isolated TO-220 (MP-45F)

10.0 ± 0.3 4.5 ± 0.2

φ 3.2 ± 0.2
2.7 ± 0.2

EQUIVALENT CIRCUIT
15.0 ± 0.3

3 ± 0.1

12.0 ± 0.2
Drain (D)

Body
4 ± 0.2

Gate (G) Diode

13.5MIN.

Gate
Protection
Diode Source (S)
0.7 ± 0.1 1.3 ± 0.2 2.5 ± 0.1
1.5 ± 0.2 0.65 ± 0.1
2.54 2.54

1.Gate
2.Drain
3.Source
1 2 3

Remark 1. This product is designed for consumer application and isn’t suitable for automotive application.
2. The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Data Sheet D12912EJ3V0DS 7

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• The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4