2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23

DESCRIPTION
• N-channel enhancement mode field effect transistor, designed for high speed pulsed
amplifier and driver applications, which is manufactored by the N-Channel DMOS
process.

FEATURES
• High density cell design for low RDS(ON).
• Voltage controlled small signal switching.
• Rugged and reliable.
• High saturation current capability.
• High-speed switcing.
• CMOS logic compatible input. D
• Not thermal runaway.
• No secondary breakdown.

S
ABSOLUTE MAXIMUM RATINGS
TA = 25OC Unless otherwise noted.

Parameter Symbol 2N7002 Units

Drain-Source Voltage V DSS 60 V

Drain-Gate Voltage (Rgs ≤ 1MΩ) VDRG 60 V

Gate Source Voltage -Continuous ± 20

V GSS V
-No Repetitive (tp<50µs) ± 20
Maximum Drain Current -Continuous 115
ID mA
-Pulsed 800

Maximum POwer Dissipation Derated Above 25OC P D 200 mW

Operation and Storage Temperature Range TJ , TSTG -55 to +150 mW / OC

O
Thermal Resistance, Junction-to-Ambient RθJA 625 C/W

Part Number: 2N7002 PAGE 1

ELECTRICAL CHARACTERISTICS
TA = 25OC Unless otherwise noted.

Parameter Symbol Conditions Min. Typ. Max. Units

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10µA 60 - - V

VDS=60V, VGS=0V, TJ=25OC - - 1.0 µA

Zero Gate Voltage Drain Current I DSS
VDS=60V, VGS=0V, TJ=125OC - - 0.5 mA

Gate - Body Leakage, Forward I GSSF VDS=0V, VGS=20V - - 100 nA

Gate - Body Leakage, Reverse I GSSR VDS=0V, VGS= -20V - - -100 nA

ON CHARACTERISTICS (note1)

Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1 2.1 2.5 V

Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=500mA, TJ=100OC - 1.2 7.5 Ω

VGS=10V, ID=500mA - 0.60 3.75

Drain-Source On-Voltage VDS(ON) V
VGS=5.0V, ID=50mA - 0.09 1.50

On-State Drain Current I D(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 2700 - mA

Forward Transconductance GFS VDS ≥ 2VDS(ON), ID=200mA 80 320 - mS

DYNAMIC CHARACTERISTICS

Input Capacitance CISS VDS=25V, VGS=0V, F=1.0 MHz - 20 50 pF

Output Capacitance COSS VDS=25V, VGS=0V, F=1.0 MHz - 11 25 pF

Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, F=1.0 MHz - 4 5 pF

VDD=30V, RL=150Ω, ID=200 mA

Turn-On Time TON - - 20 ns
VGS=10V, RGEN=25Ω
VDD=30V, RL=150Ω, ID=200 mA
Turn-Off Time TOFF - - 20 ns
VGS=10V, RGEN=25Ω

Note:
1.Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Part Number: 2N7002 PAGE 2

RATING and CHARACTERISTIC CURVES

RDS(ON), Normalized Drain-Source On-Resistance

2.0 3.0
V GS =10V 9.0 8.0
V GS =4.0V
ID, Drain-Source Current (A)

7.0 2.5
1.5

6.0 4.5 5.0 6.0 7.0

2.0

1.0 8.0
5.0
1.5 9.0

10
0.5 4.0
1.0
3.0

0 0.5
0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0

VDS, Drain-Source Coltage (V) ID, Drain Current (A)

On-Region Characteristics On-Resistance v.s. Gate Voltage and Drain Current

RDS(ON), Normalized Drain-Source On-Resistance

RDS(ON), Normalized Drain-Source On-Resistance

V GS =10V I D =500mA V GS =10V

2.0 3.0

2.5
O
TJ = 125 C
1.5 2.0

1.5
O
25 C
1.0
1.0
O
-55 C

0.5
0.5
-50 -25 0 25 50 75 100 125 150 0
0 0.4 0.8 1.2 1.6 2.0

O
TJ, Junction Temperature ( C) ID, Drain Current (A)

On-Resistance v.s Temperature On-Resistance v.s Drain

Vth, Normalized Gate-Source Threshold Voltage (V)

V DS =10V V DS = V GS I D = 1mA

2.0 1.1
O
TJ = -55 C O
25 C
O
125 C
ID, Drain Current (A)

1.6

1.0
1.2

0.8
0.9

0.4

0 0.8
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
O
VGS, Gate to Source Voltage (V) TJ, Junction Temperature ( C)

Transfer Characteristics Gate Threshold v.s. Temperature

Part Number: 2N7002 PAGE 3

RATING and CHARACTERISTIC CURVES

I D = 250 m A V GS =0V

1.10
BVDSS, Normalized Drain-Source

Is, Reverse Drain Current (A)

Breakdown Voltage (V)

1.05
O
TJ = 125 C
0.1

1.00
O
25 C
O
0.01 -55 C

0.95

0.925 0.001
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature (OC) VSD, Body Diode Forward Voltage (V)

Breakdown Voltage v.s. Temperature Body Diode Forward Voltage v.s. Current and Temperature

f=1MHz V GS =0V VDS = 25V

50 10
VGS, Gate to Source Voltage (V)

CISS 8
Capactance (pF)

20
Coss
6
10
ID = 500mA

5 Crss
4

280mA
2
2
115mA

1 0
1 2 3 5 10 20 30 50 0 0.1 0.8 1.2 1.6 2.0

VDS, Drain to Source Voltage (V) Qg, Gate Charge (nC)

Capacitance Characteristics Gate Charge Characteristics

1
Transient Thermal Resistance

0.5
r(t) , Normailized Effective

0.2 RqJA (t) = r(t) * RqJA

RqJA = (See Datasheet)
0.1
0.05
P(pk)
t1
0.01 t2

TJ - TA = P * RqJA (t)
Duty Cycle, D = t1 / t2
0.02
0.001
0.0001 0.001 0.01 0.1 1 10 100 300

Tt ,Time (sec)

Transient Thermal Respone Curve

Part Number: 2N7002 PAGE 4

RATING and CHARACTERISTIC CURVES

O
V GS =10V, Single Pulse T A= 25 C

3 VDD
2
10
0m
1 s
RL
t
imi
ID, Drain Current (A)

0.5 N)
L 1m
s
S(O
RD D VOUT
VIN
10m
s
0.1

0.05
100
ms VGS
RGEN G DUT
DC 10s 1s

0.01 S
0.005
1 2 5 10 20 30 60 80

VDS, Drain-Source Voltage (V)

Maximum Safe Operating Area Switching Test Circuit

t on t off

t d(on) tr tf
t d(off)

90% 90%

V OUT 10%
10%
Inverted
90%

50% 50%
V IN
10%
Pulse Width

Switching Waveforms

Part Number: 2N7002 PAGE 5

OUTLINE DRAWING

SOT-23

.007(.20) MIN.
.119(3.00)
.110(2.80)

.056(1.40)
.047(1.20)

.103(2.60)
.086(2.20)
.006(.15)
.083(2.10) .002(.05)
.066(1.70)
.006(.15) MAX.

.044(1.10)
.035(.90)

.020(.50)
.013(.35)

Part Number: 2N7002 PAGE 6