1SS110

Silicon Epitaxial Planar Diode for Tuner Band Switch

ADE-208-179B (Z)
Rev. 2

Features

• Low forward resistance. (r f = 0.9Ωmax)

• Suitable for 5mm pitch high speed automatical insertion.
• Small glass package (MHD) enables easy mounting and high reliability.

Ordering Information
Type No. Cathode band Package Code
1SS110 Verdure MHD

Outline

1 2
Cathode band

1. Cathode
2. Anode
1SS110

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit
Reverse voltage VR 35 V
Forward current IF 100 mA
Junction temperature Tj 175 °C
Storage temperature Tstg –65 to +175 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF — — 1.0 V I F = 10mA
Reverse voltage VR 35 — — V I R = 10µA
Reverse current IR — — 0.1 µA VR = 25V
Capacitance C — — 1.2 pF VR = 6V, f = 1MHz
Forward resistance rf — — 0.9 Ω I F = 2mA, f = 100MHz
 1SS110

–2
10

–4
10

Forward current I F (A)

10–6

–8
10

–10
10

–12
10
0 0.2 0.4 0.6 0.8 1.0
Forward voltage VF (V)

Fig.1 Forward current Vs. Forward voltage

10
f = 1MHz
Capacitance C (pF)

1.0

–1
10
1.0 10 40
Reverse voltage VR (V)

Fig.2 Capacitance Vs. Reverse voltage

1SS110
2
10
f = 100MHz

Forward resistance r f (Ω )
10

1.0

–1
10

–2
10
–4
10 10–3 10–2 –1
10
Forward current I F (A)

Fig.3 Forward resistance Vs. Forward current

 1SS110

Package Dimensions

Unit: mm

26.0 Min 2.4 Max 26.0 Min

Max
φ 2.0
1 2 1 Cathode
φ 0.4

2 Anode
Cathode band (Verdure)

HITACHI Code MHD

JEDEC Code DO-34
EIAJ Code —
Weight (g) 0.084