SP20485 BCD Technology Cost Comparison 2020 Sample

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
BCD Technology and Cost Comparison 2020

In-depth comparative study of 31 Bipolar-CMOS-DMOS technologies with a focus
on Silicon-on-Insulator high voltage devices from the 15 major leading
manufacturers.
SP20485 – IC report by Sylvain Hallereau
January 2020 – Sample
22 Bd Benoni Goullin
44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr
SP20485 ©2020 by System Plus Consulting | SP20485 - BCD Technology & Cost Comparison 2020 1
Table of Contents
Overview / Introduction 4 Foundry Technologies 41
o Executive Summary o Infineon
Technologies Evolution 10  Roadmap
o Transistors  SPT9 process
 Gate Oxides  Transistors, Insulation, Metal Layer, Passives
 LDMOS and VDMOS  Synthese
 Summary  SMART6 process
o Insulation  Infineon’s Thin-Film SOI-technology
 LOCOS and STI o STMicroelectronics: BCD6s, SOI-BCD6s, BCD8, BCD9, VIPower M0-3, VIPower
 Deep trench isolation M0-5, VIPower M0-7
 Substrate SOI o Elmos: BCD 0.8µm
 Summary
o Bosch: BCD6, BCD8
o Metal Layer Process
o NXP: A-BCD3, A-BCD9
 Aluminum and Tungsten Plug
o IXYS: BCDMOS on SOI High Voltage
 Copper Metal layer
 Thick metal layer o Freescale: SMARTMOS8, SMARTMOS10
 Summary o ON Semicondcutor
o Passives o Texas Instruments: LBC5, LBC5-SOI, LBC8, LBC9
 Capacitor in polysilicon o Linear Technology: BCD 0.7µm
 Resistor in polysilicon o Analog devices: BCD 0.5µm, BCD 0.18µm
 Metal Insulator Metal Capacitor
o Maxim – TowerJazz: BCD 0.4µm
 Thin Film resistors
o Denso: SOI-BCD 0.8µm, SOI-BCD 0.5µm
 Inductors
 Summary o Renesas: BCD0.15µm
o Toyota: SOI-BCD 0.5µm
o Shrink o Toshiba: SOI High Voltage
o High Voltage o Comparisons
Feedback
In black, the new technologies added in the 2020 report. Company services 366
In red the technologies high voltage added in this report.

Executive Summary
Overview / Introduction
o Executive Summary • This report presents an in-depth analysis of the latest innovations in Bipolar-CMOS-DMOS (BCD) devices, . It showsshowing the
o Glossary
o Reverse Costing
differences between 31 selected devices from Infineon, STMicroelectronics, Elmos, Bosch, NXP, IXYS, Freescale, Texas Instruments,
Methodology Linear Technology, Analog Devices, Maxim/TowerJazz, Denso, Renesas, Toyota and Toshiba. The report covers all the major players
on the market and their new technologies.
Evolution of BCD
Technologies • Thise 2020 version adds eight new technologies from seven existing manufacturers, and another three new manufacturers, IXYS,
Maxim and Toshiba. It focuses on high voltage technologies, over 200V and up to 600V, with the Silicon-on-Insulator (SOI)-based
Foundry technologies Review solutions from Infineon at 600V, Ixys at 200V and Toshiba at 500V. These three manufacturers have adopted very different
solutions, which we analyze in this report. The report also studies 10 SOI technologies. The technology nodes range from 2.5µm up
Comparison
to 90nm and . Tthe components range from monolithic piloted power transistors to microcontrollers with high voltage analog
Feedbacks inputs and outputs.
Related Reports • For each analyzed device, the technology report details the manufacturing process and materials used, the component design and
technical choices. Moreover it The cost report provides an estimation of the cost structure of the wafers using the various
About System Plus technologies, highlighting the influence of the technological innovations.
• This report provides a unique opportunity to understand the technology evolutions and the manufacturing cost of the major BCD
manufacturers, to give the basics for an optimal choice of components during design and integration.
• In the report, we analyse and compare products from the 15 main manufacturers. The reports is focused on technology evolution
with a description of the cost impact of these innovations. It includes technical and cost comparisons of main parameters, the
transistors, the metal layers, the insulation and the passive devices.
Technologies Summary by Founder
Overview / Introduction Infineon: SMART6 Freescale (now NXP):
o Executive Summary
o Glossary SPT9 SMARTMOS8
o Reverse Costing
Methodology Infineon’s SOI-technology SMARTMOS10W
STMicroelectronics: Texas Instruments:
Evolution of BCD
Technologies BCD6s LBC5
Foundry technologies Review SOI-BCD6s LBC5-SOI
BCD8 LBC8
Comparison
BCD9 LBC9
Feedbacks Linear Technology:
VIPower M0-3
Related Reports VIPower M0-5 BCD 0.7µm
About System Plus VIPower M0-7 Analog Devices:
Elmos: BCD 0.8µm BCD 0.5µm
Bosch: BCD6 BCD 0.18µm
BCD8 Maxim / TowerJazz (Foundry):
NXP: A-BCD3 SOI BCD 0.5µm
A-BCD9 SOI Denso: SOI-BCD 0.8µm,
IXYS: SOI High Voltage SOI-BCD 0.5µm
Renesas: BCD 0.15µm
Toyota: SOI-BCD 0.5µm
Toshiba: SOI High Voltage
New analyses respect to the report « SP17335 - BCD technology and Cost review 2017 » published
Technologies Summary – 2020 News
o Executive Summary
o Glossary New technology in the Review 2020:
o Reverse Costing
Methodology
o Infineon: BCD SOI-technology
o STMicroelectronics: BCD9 (0.13µm)
Evolution of BCD
Technologies o IXYS: SOI High Voltage
o Texas Instruments: LBC5-SOI (0.5µm)
Foundry technologies Review
o Texas Instruments: LBC9 ( 0.13µm)
Comparison
o Analog Devices: BCD 0.5µm
Feedbacks o TowerJazz (Foundry): BCD 0.5µm
Related Reports o Toshiba: SOI High Voltage
About System Plus

SOI and High voltage technologies:
o Infineon: BCD SOI-technology
o IXYS: SOI High Voltage
o Toshiba: SOI High Voltage
In black, the new technologies added in the 2020 report.

In red the technologies high voltage added in this report.
Technologies Overview
BCD or Bipolar-CMOS-DMOS has been imagined and developed to simplify the control of the power devices by proposing a monolithic
Evolution of BCD solution to integrate the gate driving circuit and current and temperature measurements to protect the power component in a same
Technologies silicon circuit. Today BCD technologies allow to integrate a microcontroller with logic, memory, analogic and power functions on the same
o Transistors
o Insulation circuit.
o Metal Layers BCD combines the strengths of three different transistors onto a single chip: Bipolar for precise analog functions, CMOS (Complementary
o Passive Metal Oxide Semiconductor) for digital design and DMOS (Double Diffused Metal Oxide Semiconductor) for power and high-voltage.
o High Voltage
Foundry technologies Review This association of technologies brings many advantages:

• reduced electromagnetic interferences
Comparison • smaller chip area
Feedbacks
• smaller PCB footprint and bill of material
Related Reports Used in a wide range of applications the BCD is available for different applications:
• high voltage: power actuator
About System Plus
• high density: added high voltage to a microcontroller
• high precision analog: analog data acquisition
• low leakage IC for wireless: power management
The first BCD circuits were made with a few CMOS and bipolar transistors added to the LDMOS high voltage to drive and measure. Since
then the technology made a huge improvement by re-inventing technology initially developed for advanced CMOS like SOI substrate, dual
oxides, copper metal layer or for the MOSFET and IGBT discrete transistors like the trenches.
Transistor - Gate Oxides
Evolution of BCD
Technologies
o Transistors
o Insulation
o Metal Layers
o Passive
o High Voltage
Comparison
Feedbacks
Related Reports
BCD 0.18µm die from Bosch
About System Plus
BCD 0.7µm die from Linear Technology
Transistor - Vertical DMOS
Evolution of BCD
Technologies
o Transistors
o Insulation
o Metal Layers
o Passive
o High Voltage
Comparison
Feedbacks
Related Reports
About System Plus
SP20485 Infineon SPT4 technology, trench MOSFET– cross-section SEM view ©2020 by System Plus Consulting | SP20485 - BCD Technology & Cost Comparison 2020 8
Infineon – SPT9 Characteristics – Die Example
• Infineon technology die manufactured with SPT9 technology.
Evolution of BCD • Die dimension: 10.62mm²
Technologies • 3-Phase Bridge Driver IC used in Automotive applications.
o Infineon: SPT9, SMART6, SOI
o STMicroelectronics: BCD6s,
SOI-BCD6s, BCD8s, BCD9,
VIPower M0-3, 5 and 7
o Elmos: BCD0.8µm
o Bosch: BCD6, BCD8
o IXYS: SOI high Voltage
o Freescale: SMARTMOS8,
SMARTMOS10W
o Texas Instruments: LBC5,
LBC5-SOI, LBC8, LBC9
o Linear technology: BCD
0.7µm
o Analog Devices: BCD 0.5µm,
BCD 0.18µm
o Maxim-TowerJazz: BCD
0.4µm
o Denso: SOI-BCD0.8µm, SOI-
BCD 0.5µm
o Renesas: BCD 0.15µm
o Toshiba: SOI high Voltage
Comparison
Feedbacks
Related Reports
About System Plus
IC Die Overview - Optical View Die Delayering- Removal of Metal Layers
Infineon – SPT9 Transistors
Evolution of BCD
Technologies

o Elmos: BCD0.8µm
o Bosch: BCD6, BCD8
SMARTMOS10W
o Linear technology: BCD High density CMOS - top view LDMOS Transistors (SEM view).
0.7µm
BCD 0.18µm
0.4µm
BCD 0.5µm
o Renesas: BCD 0.15µm100 nm 115 nm
Comparison
Feedbacks
Related Reports
About System Plus
Infineon – SPT9 Memory
Evolution of BCD
Technologies

o Elmos: BCD0.8µm
o Bosch: BCD6, BCD8
SMARTMOS10W
LBC5-SOI, LBC8, LBC9 6T-SRAM Cell - SEM View
ROM Cell - SEM View
0.7µm
BCD 0.18µm
0.4µm
BCD 0.5µm
Comparison
Feedbacks
Related Reports
About System Plus
Flash Cell - SEM View

Infineon – SPT9 Wafer Cost Hypothesis
Evolution of BCD
Technologies

o Elmos: BCD0.8µm
o Bosch: BCD6, BCD8
SMARTMOS10W
0.7µm
BCD 0.18µm
0.4µm
BCD 0.5µm
Comparison
Feedbacks
Related Reports
About System Plus
Infineon – Thin-Film SOI Transistors
Evolution of BCD
Technologies

o Elmos: BCD0.8µm
o Bosch: BCD6, BCD8
SMARTMOS10W
0.7µm
BCD 0.18µm
0.4µm
BCD 0.5µm
Comparison
Feedbacks
Related Reports
About System Plus
Infineon – Thin-Film SOI Wafer Cost Breakdown
Evolution of BCD
Technologies

o Elmos: BCD0.8µm
o Bosch: BCD6, BCD8
SMARTMOS10W
0.7µm
BCD 0.18µm
0.4µm
BCD 0.5µm
Comparison
Feedbacks
Related Reports
About System Plus
Comparison Table – 10mm² Die Price
Evolution of BCD
Technologies
Comparison
Feedbacks
Related Reports
About System Plus
Wafer Cost by Technology Node
Evolution of BCD
Technologies
Comparison
Feedbacks
Related Reports
About System Plus
Related Reports
Evolution of BCD
Technologies
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Feedbacks
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Related Reports
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Evolution of BCD
Technologies
Comparison
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Feedbacks
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REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT

BCD Technology and Cost Comparison 2020

In red the technologies high voltage added in this report.

About System Plus

In black, the new technologies added in the 2020 report.

Foundry technologies Review This association of technologies brings many advantages:

Foundry technologies Review

BCD 0.7µm die from Linear Technology

Foundry technologies Review

About System Plus

Foundry technologies Review

Foundry technologies Review

Flash Cell - SEM View

Foundry technologies Review

Foundry technologies Review

Foundry technologies Review

Foundry technologies Review

About System Plus

Foundry technologies Review

About System Plus

About System Plus

Foundry technologies Review

About System Plus Reports

Foundry technologies Review FRANKFURT/MAIN

Chris YOUMAN Mavis WANG

SHIP TO *For price in dollars please use the day’s

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