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,T) F (,T) + D: 4/14/05 3.320 Atomistic Modeling of Materials G. Ceder and N Marzari
,T) F (,T) + D: 4/14/05 3.320 Atomistic Modeling of Materials G. Ceder and N Marzari
T T
CV
S(T ) = S(Tref ) + ∫
Tref
T
dT
<σ>
∑ exp(−β (Hν − Hυ )) o
Aν
ν =1
< A> = M
∑ exp(−β(Hν − Hυ o
))
ν =1
Allow non-equal a-priori probabilities to get less possible moves that are not accepted
[ ]
Wijo = f ∆Hij
In Metropolis this is symmetric
Wjio = f [∆H ] ji
Detailed balance
Pij
=
[ ]
f ∆Hij
exp(− β ∆Hij )
Pji [ ]
f ∆H ji
δri = AF + δri i
random
See Foiles, S. M. “Calculation of the surface segregation of Ni-Cu alloys with the use
of the embedded atom method.” Physical Review B 32, no. 12 (1985): 7685–7693.
Cu in first layer
Cu in third layer
Cu in second layer
Equillibrium
Heat
temperature
Cool
U = ∑ Pν E ν S = − kB ∑ Pν ln(Pν )
ν ν
F as an integrated quantity
F = ∑ Pν [E ν + kB T ln(Pν )]
ν
F = ∑ Pν [−k B T ln(Z)]
ν
Proof
exp(− β Hν )
exp( β Hν ) = ∑ Q
exp(β Hν )
ν ∈e
1 M
=
Q
∑
ν
1
∈e
=
Q
QII ∑ exp(−βHν ) II
∆F = − kT ln = − kT ln ν ∈e
QI ∑ exp(−βHν ) I
ν ∈e
⎤ exp(− β Hν )
I
⎡
∆F = − kT ln ⎢ ∑ exp(− β (HνII − HνI )⎥
⎣ ν ∈e ⎦ QI
[
∆F = − kT ln exp(− β (HνII − HνI )
I ]
Forward projecting: Using the states sampled in state I to get the free
energy difference with II.
Equilibrium distribution
<E>I <E>II
T
CV
S(T ) = S(Tref ) + ∫ T
dT
Tref
2
C / (N k)
0
0 1 2 3 4 5
T / T0
<E> =
∂ FT ( )
∂ 1T ( )
β
µ
β F = β Fref + ∫ < E > dβ
β ref
F( µ , T ) = F( µref , T ) + ∫ < σ > dµ
µref
T T
CV
S(T ) = S(Tref ) + ∫
Tref
T
dT
<σ>
Advantages
5) Highly accurate
6) All approximations are under control and error be reduced by
longer simulations.
∆F ?
System with Hamiltonian H1 System with Hamiltonian H2
H ( λ) = H I + λ (H
…
II − H I) F( λ )
∂( F ) ∂ ⎡ 1 ⎤
= ⎢ − ln ∑ exp(− β Hν (λ ) )⎥
∂λ ∂λ ⎣ β ν ∈e ⎦
⎡ 1 1 ∂Hν ( λ ) ⎤
= ⎢−
⎣ β Q
∑
ν ∈e
(− β )
∂ λ
exp(− β Hν ( λ ) )⎥
⎦
∂H ( λ )
=
∂λ
= HII − HI λ Quantity that needs to be integrated
q+ q– = 0.25 - λ (0.5)
Effect of dipole in water q+ = – 0.25 + λ (0.5)
q-
Cl chlorophenol
CH3 Methylphenol
CN cyanophenol
OCH3 methoxyphenol
methylphenol chlorophenol
Al Cu
Electronic
Ψ
Ψ
Occupation
Configurational
We can use lattice models for studying mixing and ordering or atoms in
crystalline materials. But why is this a good approximation ?
ri i, ∆ri
arrangement
⎡ ⎤ F is Effective Hamiltonian
F({σ } = −kT ln ⎢ ∑ exp(− β E(υ({σ }))⎥ for {σ} degree of freedom
⎣ {υ} ⎦
The Hamiltonian of the Ising-like model is the free energy of the faster
excitations (e.g. vibrations, electronic excitations).