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SKKT 106, SKKT 106B, SKKH 106 THYRISTOR

/0.1 /001 /%01 2+01. 3 456 * ( ,  



  
)
/ / 2+*/ 3 46! * ( 
 4567 + 3 5# 8&)
966 566 .::+ 46!;65 .::+ 46!<65 .:: 46!;65
4"66 4$66 .::+ 46!;4$ .::+ 46!<4$ .:: 46!;4$
4#66 4=66 .::+ 46!;4= .::+ 46!<4= .:: 46!;4=
4>66 4!66 .::+ 46!;4! .::+ 46!<4! .:: 46!;4!
4966 4566 .::+ 46!;45 .::+ 46!<45 .:: 46!;45

Symbol Conditions Values Units


2+*/ 
 4567 + 3 5# (466) 8&7 46! (>5 ) *
® 2% -";456?7 + 3 "# 8&7 <$ ; <! 4=# ; 456 *
SEMIPACK 1
-4!;$66?7 + 3 "# 8&7 <$ ; <! 496 ;$!6 *
201. -";456?7 + 3 "# 8&7 @4 ; @" $66 ; " A 4=6 *
Thyristor / Diode Modules 2+.1 +, 3 $# 8&7 46  $$#6 *
+, 3 4"6 8&7 46  4966 *
B +, 3 $# 8&7 5"  46  $#666 *B

SKKT 106 +, 3 4"6 8&7 5"  46  45666 *B


/+ +, 3 $# 8&7 2+ 3 "66 *  4!# /
SKKT 106B /+(+C) +, 3 4"6 8&  69 /
SKKH 106 + +, 3 4"6 8&  $ D
2%%7 20% +, 3 4"6 8&7 /0% 3 /0017 /%% 3 /%01  $6 *
 +, 3 $# 8&7 2E 3 4 *7 E; 3 4 *;F 4 F
 /% 3 6!> A /%01 $ F
Features (;) +, 3 4"6 8&  4#6 *;F
(,;) +, 3 4"6 8&  4666 /;F
   
   
 G +, 3 4"6 8&  466 F
     
2 +, 3 $# 8&7  ;  4#6 ; $#6 *
 
2 +, 3 $# 8&7 0E 3 "" D7  ;  "66 ; !66 *
     
  
 /E+ +, 3 $# 8&7  
 " /
2E+ +, 3 $# 8&7  
 4#6 *
  
 
 !" #"$ /E% +, 3 4"6 8&7   6$# /
Typical Applications* 2E% +, 3 4"6 8&7   ! *

 %&  
  0 (H) 
7      ;   6$5 ; 64= :;@
(    
  ) 0 (H) 
 4567      ;   6" ; 64# :;@
0 (H)  4$67      ;   6"$ ; 64! :;@
 *&      0 (H )      ;   6$ ; 64 :;@
 +   
  +, H =6  I 4"6 8&
(   ,
  
   ) +  H =6  I 4$# 8&
/    #6 7  7 4 ; 4 
 "!66 ; "666 /J
 -   
   

(     ) 1   
K # L 4# M4) N
1   
 " L 4# M N
1) .     
 
 # A 954 ; B
   9# 
&  .::+ * =!
.::+ < * =5
.:: * =>

SKKT SKKH

1 09-03-2004 NOS © by SEMIKRON


BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.

Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.

Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.

2 09-03-2004 NOS © by SEMIKRON


SKKT 106, SKKT 106B, SKKH 106 THYRISTOR

Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.

Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time

Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time

3 09-03-2004 NOS © by SEMIKRON


BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 9 Gate trigger characteristics

Dimensions in mm

&  * =5 .::+ <

&  * => .::

.::+ .::+ <

&  * =! (.::+)

* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.
4 09-03-2004 NOS © by SEMIKRON

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