TLP635, 636 —_ GaAs IRED_& PHOTO-TRANSISTOR TENTATIVE DATA OFFICE MACHINE. Unit in oo HOUSEHOLD USE EQUIPHENT. es 4 SOLID STATE RELAY. SWITCHING POWER SUPPLY. F ° ‘The TOSHIBA TLP635 and TLP636 consist of a Beet photo-transistor optically coupled to a gallium gearazs 202 arsenide infrared emitting diode in a six lead gel plastic DIP package. Lf a) TLP636 1e no-base internal connection for high-aNT ass environments. 4 3 « Collector-Emitter Voltage : 80V Min. =e i + Current Transfer Ratio + 50% Min. oe = Rank GB + 100% Min. aaron ee + Isolation Voltage 2 5000Vrms Min. = Guaranteed Requirements of 1EC380/VDE0806 + Climatic Test Class + 55/150/21 . Isolation Creepage Path : 8.0mm Min. PIN CONFIGURATIONS (TOP VIEW) « Isolation Clearance 1 7.300 Bin. T1P635 T1P636 + Isolation Operating Voltage oes cea a ee at H(A oad Fy cf + Creeping Current Resistance : Group 1”? *1 : According to VDEOII0, table 4 1: Anode + ANODE 2: According to VDEOII0, table 3 2: CATHODE, {CATHODE 3: Ne Ne 4: EMITTER EMITTER 5: COLLECTOR COLLECTOR 6: BASE 2 NC 350TLP635, 636 MAXIMUM RATINGS (Ta=25%) CHARACTERISTIC SvMBoL | _ RATING uNrt Forward Current ip 60 mA Forward Current Derating (Ta=39°C) aire |__-0.7 aalec Peak Forward Current (100u6 pulse, 100pps) 1p 2 a & [Power Dissipation 2 100 a Power Dissipation Derating (Taz25°C) wore | 1-0 mH/"6 Reverse Voltage ve 5 v ‘Junction Temperature Ty 125 °c Collector-tnitter Voltage VcEo 50 v Collector-Base Voltage (TLP635) vcso 80 v Baitter-Collector Voltage Veco 7 v & | mmitter-sase voltage (TLP635) EB 7 v & [collector current Ic 50 =A B [Power Dissipation Fe 150 a Power Dissipation Derating (Ta 225°C) arc | “1.5 k/*6 Junction Temperature ty 125 °c [Storage Temperature Range cereiadecnets [ se loperating Temperature Range z Topr_| _~55-100 *c Lead Soldering Tenperature (10 sec.) | 260 se frotal Package Power Dissipation 250 aw frotal Package Power Dissipation Derating (Taz 25°C) =2.5 a/c Isolation Voltage (AG, 1 min.y RH=60%) BVs 5000 Vems 351TLP635, 636 A ————————— INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL, TEST CONDITION MIN] 1. | MAK. | ONT Forward Voltage VP Tr=l0nA 10 pias [aa] v g [Reverse current ik == [0 [aw Capacitance or V=0, felMiz = [30] - | Collector-initter Breakdown Voltage V (BR) CEO aoe eee - Emitter-collector Breakdown Voltage Vepryeco | te*0.1ma Gace lela, Collector-Base Breakdown : Voltage (TLP635) Vearycs0 | tcr0.1ma sol -}|- |v Enitter-Base Breakdown ; Voltage (TLP635) VBR) EO Hae |e eee E|cottector park current | tego | Youn24¥ See ee Ee 2 Wor=20v, Ta=B5°C =| 2) 50] ma 8 [cottector Dark Current Voe=24v, Ta=85°C - [os] r0] ua (717635) Tor | yeni gel eoela Collector Dark Current a : ae aes topo | Vop=10v on A De Forward Current Gain wey, dew ~ ~ fy oe ee | VoE=5V, 1c=0.5ma 400 Capacitance (Collector ee - _ to Emitter) fe ears ee me COUPLED ELECTRICAL CHARACTERISTICS (ra=25*C) CHARACTERISTIC SYMBOL, win] TP.] MAX] UNIT] current Transfer Ratio Ic/tr sof =| 600) , 100 | - | 600 il sien |e Saturated CTR I¢/Tp(sat) 7 x ao aaa a “tpp - [20 - [a] ee coltector-Enitter = ea Saturation Voltage VcE(sat) 0-2 ~[-]oe 382TLP635, 636 ISOLATION CHARACTERISTICS (Ta=25°C) (CHARACTERTSTIC SYMBOL | TEST CONDITION wan, | re] wax] unt] capacitance (Input to Output) | cs | Vs=0, frimiie = [oe - | Tsolation Resistance RS ¥=5000 sel ols] ~ [| o AG, 1 minute 3000 | - | - | val Teolation Voltage Bs [AC, 1 second = [10000)~— DC, 1 mince = [ooo] =| vac SWITCHING CHARACTERISTICS (Ta=25°C) CHARACTERISTIC svmBoL | TEST CONDITION wan.[ tve.[ wax.[ ont] feise Time conn ean Sales Fall Tine cores eae ec [ino ets aa frurn-on Time ton | gi«1000 io ese e0 ftarn-off Time tote - | 3] 2 frurn-on Time ton | Binl-9kA (Pig.1) =a lhe [Storage Time ts | RpE-OPEN = [asf =] os torr | Voc#5V, Ip=16aA = [2s frurn-on Time ton | Ri1.9kQ (Fig. 1) 7 atte ” Storage Time ts | Rye=220km (717635) - [2 fP =] us [turn-off Time torr | Voo=5V, Ip*L6ma es ecto ae RECOMMENDED OPERATING CONDITIONS (CHARACTERISTIC svwpot | MIN. | TYP. | MAX. | UNIT Supply Voltage Vee 7 3 [=] Forward Current IF = [a6 [2s [ma Collector Current le = a [10 | = loperating Tenperature Torr | 25 | - | #8 | “e Fig. 1 SWITCHING TIME TEST crRCUTT AL Fa ae’ tio Vee Yor + ves Tae tox | | 353TLP635,636 Ip - Ta 5 aa : 3 Seo 0 a0 8B worext TaMPERATURE t+ (C) a Imp ~ Pr g = PuLse WIDTHS 0080 & meas 5 E 5 5 Bowl s sot s me DUTY CYCLE RATIO Dy vy/STa ~ 1p 5 L GoRrerotsnt d¥p/ dt (VC) HORWARD VOLTAGE TEMPERATURE aor Sm ORWARD CURRENT tp (mA) BrSsTPAnioN Tp (wa) FORNARD CORRENT Tpp (aa) PULSE FORWARD CURRENT Po (=m) § 8 aa ra 2a ag ess 888 ‘25-45 86 80a AMBIENT TEMPERATURE Ta CC) Ip-Vp de as lo aaa FORWARD VouTAGE Vp (¥) Tpp— VRP PULSE WIDTHS 1048 REPETITIVE FREQUENCY = 100 #2 tana as uae 20 PULSE FORWARD VOLTAGE Yyp (V) Teeee a Sd COLLECTOR CURRENT 1¢ (mA) COLLECTOR CURRENT 1¢ (mA) COLLECTOR CURRENT 1 (mA) 0 100 so 30) 08 0a o1 TLP635 00 08. 03 on on or 0 te 2 A le YZ a ssw {CTOR-ENITTER VOLTAGE Vor, (V) -tr 10%, 310 3 FORWARD CURRENT Ip (mA) lo — Tp at Reg 25% Vor=5¥ 3 T FORWARD 3 0 ‘CURRENT Tp (mA) 100 100 355 é a 7 8 Corersuaieqoarmnesarapenias CoLLRETOR-EMETTER VOLTAGE Vox CV) To/tp~ ty 1000 ca Taste = xm 2 § 0 2 Z 20 5 10 A a a oY Fontan CURRENT 1p Gna) TLP635 trp te soof te=ese 5 0 a 100 BASE PHOTO CURRENT Tpp ot to Sa 109 FORWARD CURRENT Ip (ma)TLP635, 636 ——<&3& @i< $<~ RM _ —<$ << COLLECTOR DARK CURRENT tp CIop0)(JtA) COLLECTOR CURRENT 1¢ (mA) 10! wo? wt wt w ure Ip - Ta 2 40a) AMBIENT TEMPERATURE Ta (UC) Io — Ta Tp=2 Sma | 2030 a8 AMBIENT TEMPERATURE Ta Co) 700 Vor(sat) — Ta & oz 2 gS Ego be BB ol ES os ar 5 ww ww io ce squneas_ SWITCHING THN m, [ 7 g E ad é B4 J ae toad atsSorance (ean nuress Bae SWITCHING TIME = = e 30 g 5s co 100k 300k Ma = TWASE-EMITTER RESISTANCE Rep (A) 356SWITOHNG TIME (is) SWITCHING TIME— Ry, Tan28e Tpe16mA Voo=sv ton 0 EY STANCE Ry, (ka) 100 357 TLP635, 636