FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT

October 2014
FGH75T65SHD
650 V, 75 A Field Stop Trench IGBT
Features General Description
• Maximum Junction Temperature: TJ =175oC Using novel field stop IGBT technology, Fairchild’s new series of
• Positive Temperature Co-efficient for Easy Parallel Operating field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
• High Current Capability
tions where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
• 100% of the Parts Tested for ILM(1) Applications
• High Input Impedance
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant

G
G TO-247
C
E
long leads
E

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description FGH75T65SHD_F155 Unit

VCES Collector to Emitter Voltage 650 V
Gate to Emitter Voltage  20 V
VGES
Transient Gate to Emitter Voltage ± 30 V
Collector Current @ TC = 25oC 150 A
IC
Collector Current @ TC = 100oC 75 A
ILM (1) Pulsed Collector Current @ TC = 25oC 225 A
ICM (2) Pulsed Collector Current 225 A
Diode Forward Current @ TC = 25oC 75 A
IF
Diode Forward Current @ TC = 100oC 50 A
IFM (2) Pulsed Diode Maximum Forward Current 225 A
Maximum Power Dissipation @ TC = 25oC 455 W
PD
Maximum Power Dissipation @ TC = 100oC 227 W
oC
TJ Operating Junction Temperature -55 to +175
oC
Tstg Storage Temperature Range -55 to +175
Maximum Lead Temp. for soldering oC
TL 300
Purposes, 1/8” from case for 5 seconds

Notes:
1. VCC = 400 V, VGE = 15 V, IC = 225 A, RG = 20  Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature

©2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH76T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Thermal Characteristics
Symbol Parameter FGH75T65SHD_F155 Unit
RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.33 oC/W

RJC(Diode) Thermal Resistance, Junction to Case, Max. 0.65 oC/W

RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Qty per Tube
FGH75T65SHD_F155 FGH75T65SHD TO-247 G03 Tube - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA 650 - - V
BVCES / Temperature Coefficient of Breakdown
IC = 1 mA, Reference to 25oC - 0.33 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 75 mA, VCE = VGE 4 5.45 7.5 V
IC = 75 A, VGE = 15 V - 1.6 2.1 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 75 A, VGE = 15 V,
- 2.28 - V
TC = 175oC

Dynamic Characteristics
Cies Input Capacitance - 3680 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 179 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 43 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 28 - ns
tr Rise Time - 56 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 75 A, - 80 - ns
tf Fall Time RG = 3 , VGE = 15 V, - 14.4 - ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 2.4 - mJ
Eoff Turn-Off Switching Loss - 0.72 - mJ
Ets Total Switching Loss - 3.12 - mJ
td(on) Turn-On Delay Time - 26.4 - ns
tr Rise Time - 58.4 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 75 A, - 86.4 - ns
tf Fall Time RG = 3 , VGE = 15 V, - 13.6 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 3.7 - mJ
Eoff Turn-Off Switching Loss - 0.98 - mJ
Ets Total Switching Loss - 4.68 - mJ

©2014 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH75T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Unit

Qg Total Gate Charge - 123 - nC
VCE = 400 V, IC = 75 A,
Qge Gate to Emitter Charge - 22.6 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 44.9 - nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25oC - 2.2 2.8
VFM Diode Forward Voltage IF = 50 A V
TC = 175oC - 1.8 -
Erec Reverse Recovery Energy TC = 175oC - 60 - uJ
TC = 25oC - 43.4 -
trr Diode Reverse Recovery Time IF =50 A, dIF/dt = 200 A/s ns
TC = 175oC - 207 -
TC = 25oC - 87.9 -
Qrr Diode Reverse Recovery Charge nC
TC = 175oC - 1243 -

©2014 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH75T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

©2014 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH75T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.

Gate Resistance Gate Resistance

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current

©2014 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH75T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current

Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

©2014 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH75T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

Figure 21.Transient Thermal Impedance of IGBT

PDM
t1
t2

Figure 22.Transient Thermal Impedance of Diode

PDM
t1
t2

©2014 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH75T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
Mechanical Dimensions

Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3

©2014 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH75T65SHD Rev. C1
 FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
AccuPower™ F-PFS™ ®*
Awinda® FRFET®
AX-CAP®* Global Power ResourceSM PowerTrench® ®
TinyBoost
BitSiC™ GreenBridge™ PowerXS™
TinyBuck®
Build it Now™ Green FPS™ Programmable Active Droop™
® TinyCalc™
CorePLUS™ Green FPS™ e-Series™ QFET
TinyLogic®
CorePOWER™ Gmax™ QS™
TINYOPTO™
CROSSVOLT™ GTO™ Quiet Series™
TinyPower™
CTL™ IntelliMAX™ RapidConfigure™
TinyPWM™
Current Transfer Logic™ ISOPLANAR™ ™ TinyWire™
DEUXPEED® Marking Small Speakers Sound Louder
TranSiC™
Dual Cool™ and Better™ Saving our world, 1mW/W/kW at a time™
TriFault Detect™
EcoSPARK® MegaBuck™ SignalWise™
TRUECURRENT®*
EfficentMax™ MICROCOUPLER™ SmartMax™
SerDes™
ESBC™ MicroFET™ SMART START™
MicroPak™ Solutions for Your Success™
MicroPak2™ SPM®
Fairchild ® MillerDrive™ STEALTH™ UHC®
®
Fairchild Semiconductor ® MotionMax™ SuperFET Ultra FRFET™
FACT Quiet Series™ MotionGrid® SuperSOT™-3 UniFET™
®
FACT® MTi SuperSOT™-6 VCX™
®
FAST® MTx SuperSOT™-8 VisualMax™
® ®
FastvCore™ MVN SupreMOS VoltagePlus™
®
FETBench™ mWSaver SyncFET™ XS™
FPS™ OptoHiT™ Sync-Lock™ Xsens™
☇ॎ ™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I71
©2014 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
FGH75T65SHD Rev. C1