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hip-On-Board and (COF) (Figure-1a) head pre- One or two COB devices per
Integrated Circuits amplifiers are found in computer assembly are common but some
( I C ) Pa c k a g i n g disk drive head stacks, although, products may use as many as 6
share a common moved by speed and size, are COB devices on one board. COB
heritage, that is, the migrating towards Flip-Chip-On- is essentially the grass-root
wire bonding process. However Flex (FCOF) and possibly Chip- technology behind many Plastic
they differ radically in the On-Suspension (COS). Other Ball Grid Arrays (PBGA), array
subsequent steps and processes. applications for Chip-On-Flex Chip-Scale Packages (CSP) and
There is great diversity and scope provide folded assemblies for Systems In Package (SIP). CSPs
of COB applications with portable Digicams and Video-cams. with multiple stacked dies are now
electronics being major consu- a reality. With two up or three up
mers of bare dies attached onto die stacks, footprint efficiencies
organic substrates. The range become well above 100%,
comprises a vast array of products exceeding those of Flip Chips. It is
s u c h a s Pe r s o n a l D i g i t a l conceivable that some day this
Assistants, Pagers, Watches, may extend to COB surface
Calculators, Videocams, mount assemblies. Figures- 1b to
Electronic Books, Dictionaries, 1d further exemplify the scope and
Spell Checkers and Translators, range of COB applications.
Personal Medical Devices like
Blood Glucose Testers, Hearing COB Positioning
Fig. 1a. HDD Head Preamp
aids and other monitoring devices The cost per pin for the more
apart from a wide range of toys traditional packages like Quad
and handheld games. Other Flat Packs (QFP) and Small
applications include Caller Outline (SO) ICs has nearly
Identifier Devices (ID Chip sets) & flattened out at around the 0.25-
cordless phones. Radio Frequency 0.5 cents mark depending on size
(RF) modules use gold wire or and volume. One reason is that
ribbon bonding of Gallium- traditional IC packaging and test
Arsenide (GaAs) devices without equipment has already been
encapsulation on ceramic or amortized over the years. The
Teflon substrates. Chip-On-Flex Fig. 1b. High I/O Die other is the astronomical volume.
(Handheld application)
Manufacturing Insights
Specifications A B C D F Units
Type of Bonding Al Wedge AL Wedge AL & Au Wedge AL & Au Wedge Al & Au Wedge
Bond Force 15 – 60 15 – 200 15 – 200 grams
Bond Time 0 – 255 Programmable Programmable Programmable millisecs
Bond Power 0–1 0–1 0–1 Watt
Z Travel Limit 6 (0.24) 10 (0.4) 10 (0.4) 14.4 (0.5) 12.7 (0.5) mm (inches)
Z Travel Resolution 1.6 (0.063) 10 (0.4) 10 (0.4) 0.29 0.29 micron (mils)
Limit +/- 180 degrees
Resolution 0.0125 0.04 0.04 degrees
Wire Size 0.8 – 2 1–2 2 1 – 3 (Al) , 0.7 – 3 (Au) 1 – 2 (Al), 0.7 – 2 (Au) mils
Cycle Time 280 350 250 < 166 200 millisecs
Bonding Area 8x4 /14x4 4x8 3x3 2.5 x 2.5 16 x 14 inches
X Y Resolution 1 (0.04) 5 (0.2) 5 (0.2) 0.1 0.1 micron
microinches Nickel and 3-4 contaminants. Ultrasonic of the process and the need for
microinches Gold flash over bonding energy is sufficient for continued education! A complete
Nickel (Ni) alone is also used in normal oxide films and tarnish but treatise on all the interactions is
some applications (Figure-1d). not for excessive amounts of beyond the scope of this write-up.
For Gold wire bonding 10-20 contamination. Plasma Etching is Optimization of the variables is
microinches Gold plating is needed to obtain the requisite best done through Design-Of-
preferred. Thicker gold favors wire bond strength and reliability for Experiments (DOE). The final
bonding but gold intermetalics high-end applications, Disk drive measure of bond quality and
give brittle soldering. Selective COF and in BGA assembly. reliability is bond strength. Aspects
plating is a possible but expensive Frayed edges of punched PCBs relating to bond strength and its
option for select applications. can shed fibers on the board measurement are defined under
Following real life parameters surface leading to misbonds, so the Mil. Std. 883 D method
from the die in Figure-1b an effective tool sharpening and 2011.7, which is useful for initial
demonstrate layout conside- control program must be in effect qualification and for ongoing
rations: at the raw fab house. Pre bond statistical process control.
Min Die Pad Pitch= 4 mils (100æ )
Pad Die size = 3mils by 3 mils Bonding Variables Fishbone Diagram
(75 æ by 75 æ) BONDING SURFACE
( SUBSRATE ETC.)
WIRE BONDER
Min PCB Pad size = 5 mils by 20 UNIFORMITY
BONDING
CALIBRATION
ULTRA INITIAL
METAL PURITY
TIME
mils. (This Pad length allows re- SIZE
PURITY
BONDABILITY
SYNCHRONIZATION
SURFACE
TEXTURE BOND QUALITY
Max Wire Length = 200mils TWIST/CURL
& RELIABILITY
TEMPERATURE
Wire Diameter = 1mil HEAT
TRANSFER
WIRE CURL
FOOTPRINT
BONDING
POSITION
RIGIDITY
Wire Loop Height = 5-15 mils ENVIRONMENT
STABILITY WIRE
SURFACE AREA
RECRYTALIZATION
CLAMPING
FORCE
SURFACE
= 45 Degrees (to prevent wires SYNCHRONIZATION LOCATION CONDITION
WORK HOLDER BONDED WIRE TOOL
crossing adjacent die pad)
Clearances: Option 1 flow needs Fig. 5. Wire-Bonding Fish Bone Diagram
both a no-component zone and a Testing
height limitation zone around the blowing with dry air or Nitrogen The Process flow (Figure- 2) shows
COB site to allow the bonding (N2) assists in micro debris and the need for pre-encapsulation
tool to operate safely. Clearance particulate removal. The tests, which comprise a total static
requirements are machine and discerning COB assembler opts current test validating basic
tool specific and determined from for routed PCBs over punched. connection and die integrity
machine specs. Option 2 flow followed by a functional test (FT1).
needs a minimum 5mm no Bonding Pa r a m e t e r Fo l l o w i n g F T 1 , p r o t e c t i v e
component zone around the COB Control encapsulation is applied over the
post-encapsulated site. Bond power, time and force COB and cured. A critical factor is
settings are bond type and allowing the post-encapsulated
Contamination Control application dependent and assembly to cool and stabilize
The COB assembly requires a critical during machine set up. The prior to the 2nd functional test
class 10k or better clean room, Ultrasonic energy must be enough (FT2), essentially a repeat of FT1,
bunny suits, facemasks and clean to bare the active metals for to ensure post encapsulation
room handling discipline and intermetalic bonding and yet bond integrity. Careless or
control. However all processes maintain die integrity. Excessive excessive handling of the hot
must be examined for contami- bonding energy can lead to die assemblies immediately following
nation potential. Reflow ovens stressing, cracking and cratering cure may cause bond failures. This
should be meticulously clean of issues, some of which may surface 3-step test regimen improves
micro solder balls and flux during reliability testing. finished assembly test yields and
residues. Any offline operations, Figure-5 shows the interactive moves fault detection to the pre-
involving human contact are wire bonding variables. One can encapsulation stage where COB
suspect sources of organic readily appreciate the complexity rework is easier. Upon process
Manufacturing Insights
maturity, FT 2 may yield levels high and fill (D&F), seen in Figure-1e, process.
enough to skip it altogether. The lays down a contiguous high Die level analysis may prove quite
test regimen works for either flow- viscosity bead, creating a well- unsettling for a board assembler.
SMT before or after COB. With defined containment. This 'Dam' is Developing a close alliance with a
SMT before COB the test fixtures pre-cured typically for 2-5mins. capable laboratory specialized in
are simplified since the assembly The 'fill' is low viscosity spiral this task and with the die supplier
is essentially complete. In case of pattern using precise dispensing greatly helps. A COB problem
SMT after COB (Option 2 flow) guidelines. Encapsulant materials could be a legitimate die problem
test fixtures need an auxiliary must be preconditioned and the or board assembly related. Take
board with just the SMT compo- board temperature elevated to for instance the die defect shown
nents (minus the COB devices) around 8000C to minimize air in Figure-6. This classical case of
connecting to the COB assembly bubbles and moisture entrapment electrical overstress could mani-
under test via test pins. FT can be to prevent 'popcorn' effects. fest in similar ways from the
made simple or as thorough as assembly process or from a
needed depending upon the congenital weak spot in the die. It
completion level of the assembly. requires further detailed Scanning
ICT of the assembly is a nice Electron Microscope (SEM) cross-
option, and preferred, but feasible section examination with close
only if the assembly is designed for cooperation between the
it and provided the value-add assembler and die supplier for
justifies ICT equipment cost. root cause identification. The
assistance of wafer fab engineers,
Encapsulation Options related die lot defectivity count,
Many COB encapsulatio n Fig. 1e.The die in Figure- 1b with Dam die structure details such as
materials are single part epoxies number of metal layers,
similar to those used in the Failure Analysis and passivation and the type of
semiconductor packaging Improving Yield process etc. provide vital clues for
industry. The critical selection Failure analysis poses the most proper analysis. Without that
criterions are Rheology, Glass challenges amongst all the steps cooperation the determination
temp Tg, Coefficient of thermal in COB assembly. Die level visual can lead down a rocky road with a
expansion (Cte), low ionic inspection can, however, be lot of gray areas.
contribution, easy cure and post learned and is accomplished at
cure protection properties. 50 - 500 X to detect fab defects
Thermoset coatings require and surface damage. Mil. Std.
typically 3-6 hrs at 140-1200C 883 E, method 2010.104 defines
curing. Ultra Violet (UV) curable the visual criterion governing bare
rivals are coming along, claiming die acceptance.
improved protection. Mounted and bonded dies can be
A ‘Glob-Top' (GT), as the name removed, the Al wires and pads
applies, is obtained by a free flow chemically etched to expose the
of high viscosity coating. GT is underlying Silicon and visualized Fig. 6. EOS Die defect
easier but suffers from footprint for cracks and damage causing
and consequential height leakage currents. Once encapsu-
variability and suited for less lated, analysis becomes much Reworking COB
critical applications. Control of more difficult. Decapping with As with any process rework must
encapsulation height is crucial for fuming Nitric Acid gives little be considered. Some dies will
reliability. Too close to the bond success-the coating simply turns inevitably fail and die selection
wire loop or wire exposed causes to a goopy mess. The assembler may not always be optimal.
failures. Precise height and can only rely on electrical testing However many of these COB
footprint require an auto and analysis. Ongoing reliability assemblies can be recovered.
dispenser using Archemedes valve testing (ORT) via thermal cycling is COB rework is applied under 3
or Positive Displacement methods a good tool to weed out different scenarios:
and can cost upto $ 300K. Dam weaknesses and improve the A. Bonds missing or mis-
bonds:
Manufacturing Insights
This is doable only if space around it looses its bond to the base serving across a wide range of
the die pad and board metalli- material it is then pried off. The products and applications as a
zation permits bonding a new wire steps then proceed along item B DCA alternative to IC packaging.
without disturbing adjacent above. COB has as its roots wire
bonds. Bonds must be on fresh Rework of COB may appear bonding, a technology with some
areas and never over previous tedious but it is doable and may 4 decades of development and
footprints. If space limits access, help recover as much as 80 % of maturity behind it.
the die must be completely defective assemblies. The process
removed and the processes nature and pad width limit rework References
redone per item B below. to one time. [1] KGD Technologies Mile-
B. Die replacement before stones, SIA Road Map 1992
encapsulation: Summary & Conclusion Semiconductor Industry
This is the case when a die is found COB is a viable process with many Association.
damaged at VMI or defective applications in relatively modest [2] Assurance Technologies for
during the testing prior to cost products with relatively short Known Good Dies,
encapsulation. The first step is the life cycle and where time to market Larry Gilg, Flip Chip Techno-
removal of the bond wires by a and 'first-in-the-game' a key logies, John H.Lau (Editor),
sharp needle under magnifi- ingredient for success. Die cost, McGraw-Hill 1996.
cation. Next, removal of the die sizing, I/ O, complexity, foundry [3] Procurement Standard for
requires controlled localized maturity and UBD are key factors Known Good Die
heating to achieve softening and in selecting dies for COB. EIA/JEDEC Std. JESD49, Joint
breakdown of the die bond Successfully merging COB with Electron Device Engineering
adhesive (typically around surface mount processes requires Council, Arlington, VA. URL:
200oC). Heating is mostly top-side understanding, controlling and www.jedec.org
convective but could be radiant. managing a whole new set of [4] Mil- Std-883 E, Test Method
Critical factors are controlling complex variables related to the Standards, Microcircuits
maximum temperatures and wire bonding process. A 10 K or U R L : h t t p : / / w w w. m i l - s t d -
keeping gradients under 3oC / sec better class clean room and 883.com/
to prevent degradation of any associated discipline is highly
sensitive components. The recommended. Challenges for This paper was first published at
defective die is easily pried off the board assembler lie in t h e S M TA I n t e r n a t i o n a l
upon adhesive break down. After acquiring skills, knowledge and Conference, Chicago, 2003 and
a visual for any site damage, is used with permission
resources more attuned to IC back
remnants of the die- attach and end processes and coupling them
bond wires are removed and the with SMT know how. Author Profile
site cleaned thoroughly and re- Top critical factors are a COB
inspected. The process then friendly PCB layout, die supplier
follows the prime sequence except management, bond reliability and
new bonds must be on new areas a pre-encapsulation test regimen.
and never over previous foot- Critical process control points are
prints. contamination control, tool
C. Die replacement after management, and wire loop and
encapsulation: encapsulation height control.
When a fully completed and Higher end applications and
encapsulated assembly fails final component manufacturing like
test and the fault traced to the BGA assembly require Plasma
COB, the defect could be either cleaning. Although Flip Chips and
the die or bonding. Rework Flip Chip CSPs (FCCSP) compete Mukul Luthra is the Business Director and
requires removing the encapsu- with COB, each has it's own founder of Waterfall techno-logies.
lation followed by the sequence of uniqueness and 'best-fit' market Waterfall technologies has trained
item B above. As with die removal, hundreds of professionals over the years
segments. COB is a mature in almost every major multinational and
the encapsulation is softened to process, using state of the art small and medium enterprise involved
the point of degradation by equipment, and is currently with PCB Assembly. He can be reach at:
topside convective heating. When mukul@waterfalltech.com