Y65KKE

FAST TURN-OFF THYRISTOR

Features
 Interdigitated amplifying gates
 Fast turn-on and high di/dt IT(AV) 2080A
 Low switching losses VDRM/VRRM 800~1800V
Typical Applications
 Inductive heating
tq 18~50µs
 Electronic welders ITSM 21 kA
 Self-commutated inverters I2t 2205 103A2S

VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT
Min Type Max

TC=55°C 2080
180 half sine wave 50Hz
IT(AV) Mean on-state current 125 A
Double side cooled,
TC=85°C 1400

VDRM Repetitive peak off-state voltage VDRM&VRRM , tp=10ms

125 800 1800 V
VRRM Repetitive peak reverse voltage VDSM&VRSM= VDRM&VRRM+100V

IDRM VD= VDRM

Repetitive peak current 125 120 mA
IRRM VR= VRRM
ITSM Surge on-state current 21 kA
10ms half sine wave 125
I2t I2T for fusing coordination 2205 A2s*103

VTO Threshold voltage 1.41 V

125
rT On-state slop resistance 0.23 mΩ
VTM Peak on-state voltage ITM=4000A, F=32kN 125 2.33 V

dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125 500 V/μs

VDM= 67%VDRM to3000A

di/dt Critical rate of rise of on-state current 125 1200 A/μs
Gate pulse tr ≤0.5μs IGM=1.5A

ITM=2000A,tp=2000µs,
Qrr Recovery charge 125 860 µC
di/dt=-60A/µs,VR=50V
ITM=1700A,tp=1000µs, VR =50V
tq Circuit commutated turn-off time 125 18 50 µs
dv/dt=30V/µs ,di/dt=-20A/µs
IGT Gate trigger current 40 400 mA
VGT Gate trigger voltage VA=12V, IA=1A 25 0.9 4.0 V
IH Holding current 20 800 mA
VGD Non-trigger gate voltage VDM=67%VDRM 125 0.3 V
Thermal resistance
Rth(j-c) 0.013
Junction to case At 1800 sine, double side cooled
C /W
Thermal resistance Clamping force 32kN
Rth(c-h) 0.0035
case to heat sink
Fm Mounting force 27 34 kN

Tstg Stored temperature -40 140 C

Wt Weight 820 g

Outline KT60cT65

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 Y65KKE
Peak On-state Voltage Vs.Peak On-state Current
Y65KKE Max . junction To Case Thermai Impedance Vs.Time
0.013
5 0.014

Transient thermal impedance,°C/W

4.5 0.012
Instantaneous on-state voltage,volts

TJ =125°C
4 0.01
3.5
0.008
3
0.006
2.5
0.004
2
0.002
1.5

1 0
100 1000 10000 100000 0.001 0.01 0.1 1 10
Instantaneous on-state current,amperes Time,seconds

Fig.1 Fig.2

21
Surge Current Vs.Cycles I22205
t Vs.Time
21
22 2500
20 2300
Total peak half-sine surge current,kA

18 2100
Maximum I 2t(Kamps2,secs)

16 1900

1700
14
1500
12
1300
10
1100
8
900
6
700
4 500
1 10 100 1 10
Cycles at 50Hz Time,m.seconds

Fig.3 Fig.4

Gate characteristic at 25°C junction temperature Gate Trigger Zone at varies temperature
4 V,400MA
18 6
-30°C

16 -10°C
5
14 P GM =120W
Gate voltage,VGT ，V

25 °C
Gate voltage,VGT ，V

max. (100μs spulse) 4

12
125°C
10
3
8
min. 2
6
4 1
P G 2W
2
0
0
0 100 200 300 400 500 600 700
0 4 8 12 16 20
Gate current,IGT ，A Gate current,IGT ，mA

Fig.5 Fig.6

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 Y65KKE
Outline:

26±0.5

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