GENERAL DESCRIPTION CRO .. The BC142 is a NPN silicon planar epitaxial transistor, It features low saturation voltage, low collector cut~ off current and high breakdown voltage. Tt is intended for use in driver stages of high power audio amplifiers. It can be supplied together with BC143 as a match pair. ABSOLUTE WAXIMUM RATINGS: Continuous Power Dissipation @ T4=25°C, P max Continuous Power Dissipation @ 74=45%C, P max Continuous Power Dissipation @ T¢=25°C, P max Continuous Power Dissipation @ Tg=75°C, P max Arximum Collector Junction Temperature, TJ vorage Tenperature Range, Tstg joldering Temperature (10 see. tine limit) Continuous Collector Current, Ig max Collector-Base Voltage, Vong Collector-Emitter Voltages Vogo Emitter-Base ELECTRICAL CHARACTERISTICS @_7/ Voltage, Vago 5°C_(unless otherwise s MECHANICAL OUTLINE ed) w 0.8" 0.7" ow 3.6" 200°C 58°C to +200°C 260°C 1A s0v. 6ov Sv ELECTRICAL CHARACTERISTICS @ TA=25°C_(unless_otherwise stated) PARAMETER SwBoL [WIN TYP WAX [UNIT | TEST CONDITION ol lector-base Breakdown Voltage BVcBO 80 ¥ Collector-Emitter Breakdown Voltage | LVcgo 60 v lEmitter-Base Breakdown Voltage BVEB0 5 v collector Cutoff Current Topo so | mA collector Cutoff Current 5oB0 50 | uA Icotector-Emitter Saturation Voltage | Vor (sat) 050.4 | Vv Icolector-Emitter Saturation Voltage | Vor (sat) 0.3 v pase-Emitter Saturation Voltage Vee (eat) us | ov pase-Emitter Voltage Yoe 0.83 v b.c. Current Gain bee 100 ID.c. Current Gain hep 100 D.C. Current Gain 7 bye 20 80 ID.c. Current Gain bes 50 High Frequency Current Gain hee 5 axitput Capacitance cob 12 pF ; 1A2-BC143 match-pair hyg ratio [0.8 1.25 MICRO ELECTRONICS LID. 38414758 2) £38, Hung To Roed, Mierotron Building, Kwun Tong, Kowloon, Hong Kong Kwon Tong ?.0, Box 69477 Hong Kong. Fax No. 341 0321 Telex: 49510 Micro Hx. Tal: 343 01