= EES519 Test (1 Fall 2017 Dr M. Time1 [siileol? oP. 1-(a) _ -i- what are the advantages of Schottky diodes ?. ~ii- what are the disadvantages of Schottky diodes ? . (b) A ms rectifying contact is formed from metal with adm = 4.78 eV and silicon doped y with Np =10'7 cm® . Assume T= 300K , qXx=4.04 eV, ni= 1.45x10" cm® , E, = 1.12 eV. i) Caleulate qn, qe and draw the energy band diagram under equilibrium . ii) If thie reverse saturation current is 10° A , what should be the applied voltage required to pass a current of 1 mA?. iif) For the current to pass by tunneling , it is required that the depletion region be reduced to 2.5nm, calculate the doping required. Assume qq of part (i)- 2. For the MOS capacitor : (a)Explain why the flatband voltage depends on the charge in the oxide or at the oxide/silicon interface ?. (b)Why the flatband capacitance is not equal to the oxide capacitance ?. (©) Why is the high frequency capacitance is constant in inversion 2. (@) If qbns= 0 but Qss #0 and +ve , sketch p(x), & and ¢(x) under equilibrium . by ye 3-A MOS structure is formed from P'-poly , oxide and p-type silicon. Assume Xox =15nm ,Ng = 10cm". . die a) Calculate the threshold voltage ® he set ) IK Qin 5) = 106 Clem, what is Vee) ——-EES514 een nena ef Tester Fall 9.01 ——Q))| oli Whedon the advantages of scholtky. cliodess 2 Fast. no storoje times , ficou only one typeof carriers is_cnvalt.ed | ————-— | and Docaise of small-copocetonce ford switching the sffeckive | __— | turn on voltage 15 Loss than thot of the paxjunckion sf | what ore the disadvantages of schatt ky-dindes? — —___—_} Tats) 32>. Cot. Tso, 10". 108 TalPad |!) Ams rectifying contack is formed between mibal with 40mawaaev} —_ ond silicon doped wich Vom iota, AssimeTanostls 40ts;a teal a ie tas Kid ent™ eg ie OS ee | equilibrium: 4x Vin .00si si 2 44s. Eo 2 Ene ~ ou, 1122 o.ndsa fa( ito) 2 = Tas xe Qfsi = Hao Ay = 4.33 UW Ido= 9. 2 Qe 10; . Un = 0SBR. [tit a.o25a fa (10! 2 ey TUSK TOT: vi [ee yee ETc ee? DE Ci aN No = 201.9) (3-85 x15'") (0. (meq) S83) 5-24 x oP epi ® (a-sx1o FV 6x16 9) For the HOS capacitor.gorso Luc un t-seso-ond+¥0,skebch pcm, cat,.ond———}———. ta gia indore Bibra, SOE 3s ES Ne ey ™ Gent | tex ‘ $ 5 a7 as oo ox3 ola. Cofeulate the threshold. walle Brian won Vee 2p BE Chima Assume tox=1snm,Na=to™ cai’, eis neo tAobh NM) ons n= A105. strudure.1s,formed. fom. P'-poly-andde,.ond_pty pesibicon,| -4 x | Qa--tNn lm» Wm [Be Gow) = Loseurid em _» Oa 2h 6n2xti ana Cone Gov = (3-0) (8-35xi0) = 2.301 K15" E/em* in ox 1S 10-9 | Vr = o(o-4o8) , 5:39) 0.0 = 0-659 vole |) tf Qinvs 16% clom what isVes Qiny = = Cox (Ve Vr). (o£. -( 9.301 K15")( Ve 0 632) Ve |) What isthe electric fuld inthe owide éox)f Oe =18%clen| = -Qox =: ie se C164), ‘Eox “(Cox ) Chex) (300167) (15 x10)oh F fsg-v7) Vos VBE masse . EE 519 Test(2) Fall 2015 5/1/2016 Time 1% hr Dr. M. Hamed peste (OT 1. (a}-The condition of ¢s = 261 assumed in the derivation of the threshold voltage Vs is based on what major assumption ?. {b) the lo=( a CoxW/L){ Ves Vr) -Vos/2} Vos wear TEJIO 1s derived based on what major assumption ?. {c) The gradual channel approximation model of the MOST current is based on what assumptions?. (d) For an ideal solar cell , prove that at the maximum power point that: (1 + Vin/Ven) ev" = (1 + Ise/lo) ow a Qa nO . OF Oe qu Gr. S~ ae 2- Given an nMOST with the following parameters : pnCox=50 pA? , 2dr =0.58V , Vr(Vo=0)=0.8V, Y=O2 vi? | Vo=4V , Ve=iV (RB) and Vs =0V A + A f lo =0.6 mA, find W/L. ne = b) Calculate Ip when Vo=3.5V , Vo=2V , Ve=2V (R.B) and Vs =OV i aes Ww 2° ee f | . ye oph? e 1 : Bs Alero FOF 3-Asilicon solar cell of area A=6 cm? , lo =2x10% Aand Isc =180mA under solar irradiance 1KW/m? , assume T= 300K . a) Determine Voc. P. . b) solar cell. max. power Pm. oa ¢) solar cell Fill factor F.F c d) solar cell efficiency n « mull \) _\s e) Ri that will produce the maximum power .BESS At 4 ele a =TesteaJallt 201602 at * the number of. electrons ot the ovide /sificon inter, A ch aden te | equall to the numberof holles in thw bulk, which occurs when. Ei movies down Ep by 9p a ut Pepe seagate Foe the chanacl. cespect toV ond equalize ut with sero, Pltve vit eH Ped eee ere a. dP tee wd Trove MK il ‘av a Oh es tae Te oe Ne CN iy To = dv Nth e WWth [poVe_, Tole Tse, T 7 He sig Mla oO SS hy te i cl a iM |—_fny Vm eS Nen = Che Vik Ts Po tn) Ven BN Ned, Ves AV (R-B) Vso Too. ém A Yara Vay +t Latoya —L3.0¢ Lao wat (aa ie) Bs ae fe eee es | Ves osaay | | | j} Se ve sve the Most. (Sip a | | vo ave eg the HOST as in saburabian —————— | Th ee a cal ee o6410° = ua {uh (va.o3ad) Efi lai ied . we 229-564 eae | hth Vg 23.59, Vo NN = 2N(8-8)_ Vs = old As Pa Vea, t LG. Vg Lacs) J diet el Neonat female se igdee yee nes an i ual Og | Ne>Ne the HOST iso hie id Np SNe Ve the HosT isin ee Pee | | Tos = tas 64) (50X15) -Ls-5-0.960)0)- Gr] 4526 mA | «Tos= WnCox [(Vves-Vz) Vos Sos i DAs Gem, I, -2K6' A, IscaiBomA , Din= iki? Taaa0! bk. mee (Qy Ta Tse ToC oT 1), Noe Tn giro. No, peter Tele OMT) | sects set Se MTA Ie ANT Tee yy = Boo Tec eS Vek Dn { Tse i) a kT Ten) Tah Moc 20.0258 On (0.180 + 2x15) 9 Ya4y axis? J T a |wee (oat | ca [ma Ise Tal eYO/Wih 4) bore eaten BC oito-01sa = ms: Cox’) Ce at) 2 0169 A= 16a mA — _ {2 Pm tmVm = Cotes) (ou). 63.506 mate oe. (c) FE=ImWm (63-546 415°) = 9.390 Tse Voc (0-120) (0-434) =_ImVm (63-596 X15") vino s ner % da Tanta TOMERIO) “a (eh Pm= (Tm)? Bu 4s JT Vite Qy = 64-546 x16? _ 9 ace a Is 7 (0.164)? CEE 519 Test(2} Fall 2013 2/1/2014 Time 1% hr 1- (a)- Sketch the ideal energy band diagram of a metal/ n-type semiconductor junction in which m< $s: « Explain why this is an ohmic contact. What is meant by ideal ?. (b)- Sketch the energy band diagram of an MOS structure under the flat band condition . Why is the flat band capacitance of the MOS isnot equal to the oxide capacitance ?. Cay a (c) Why does the space charge region in the semiconductor of an MOS structure reach a maximum width once the inversion layer is formed ?. Is this the case for any condition ?. (d) Discuss why the threshold voltages changes when a reverse -bias source to substrate voltage is applied to a MOST . ~ Lor 2- An ideal ( ms =0, Qss=0) MOS structure with oxide thickness of 700 A and substrate doping a of Na = 5x10"" em? a) Find the potential at the Si/SiO, interface and the potential across the SiO; to make the silicon surface intrinsic. b) Find the potential at the Si/SiO2 interface and the potential across the SiO; to form the inversion layer . ¢) Ifa gate voltage of Vq=1 Vis applied , how does this voltage is distributed| divided) between the oxide and the semiconductor ?. d) Repeat pat(C) if V¢=2V , comment on the result (of part (d)). = 2, Vile ( ‘ a 5 Nox = Con 3- For an n-channel MOST with aluminum gate ( qm =4.1eV) and L=ipm , W=10pm, Xox=200A, Na=10'em? , H,=400cm*/V.sec and Qss/q= 5x10" cm”. Calculate / a) The threshold voltage Vr « b) The drain current Ip for Vcs=2V and Vps=0.5 V- c) The drain current Ip forVcs=2V and Vos= 5V. at T= 300K : Eg(Si er(Si)= 11.9 , er(SiOz) = 3.9 = Betehewiel, tees devtide 8s os Be: - is Vigra pies = 4 Was Ss a a ee —t Ahh ak 1 i ba - Ev | : —— fate Ideok_menns. | it nance Th is.on shmic contact because the charge induced inthe emi peanducta tn aligning te fri bevels. inducad_by majority energy barrier Joweringth Se Goeth Ll e As tf ona Pf tif acchinscaty 4 va mobo cies <4. 5, a jo i) on > Cs | q +— to smaff length called deday Denglh Lo.,sethecapacitan: i — oe pe isp nda nts ae at ese de unin. depletion width es: a= [eeC@e) Na,| the inversion change. Lich Becouse when applysng 0. negakive Vis far nH05T the souren = | substirade ond drain substrate ou revere biased which increases | | the depletion charge ond thus. increases the depletion layer —_| | thicknes 20-0 larger theeshalld vobloge is required ho creat | =e DL tas.20, Ass 20. Zon At ,Na= sxioSeni? a althe Si/Si0, inerface + Cf pam be fa\eoengV | | ners Sid: Von. Oa = [ae iaCeL tee siedcals Sf ee NaN aah vases ai) tanh? oe throb the sisi, interface: 0.9 0p 208. 7A a ere ee oa ee eo | ners Si0,: Vor. Qa = [26 FNa2Gp) 2 0o-635V i Coy ——-(cr.0only the Volttoge needed to. create the inversion ager will | nae ee lS the rest of the voBtage | V=Cz4Vo: 5 i Hoge 1. Os. NV. alae 3413 aeatey P&— eg Sp ims tte Lasgo, loge Kor 200H Na ai! petoc emt tf a ee seta! cing _| tO Mm ane tol Ne VR 2p Ba Npp=Cms Oss E 4 &Con I Oe “ r= 0.0259 taf 1o'? = 0.403 Loss Vrsxio™ See ea ~Us= 4.055. 11, as = S.018V te cei cDmnis = Ye Le 1% = 0-413 C= Ge e132 696" Fle? Veg = = 0-419 Sxlo"» 1.615% 1.33 1326 X10? - |g aa ea Na Oe) ant 656 218? Lem oVpa a132 420-403), 1:656%15"_ 9 Bau Vv Va2ex1o7F {hy Ves 2 Vr, MosT is OM pM Ms MOST sin Pinea repay = Wa Cox 4 i c 2 | = (No) (400) (1-926K 167 T qT | Ves>Vr__, HosT is oN | Nos>Ves-Vr_, MOST is_in soturation Jop=WHnCox [Ves.Vz]” IL a Tos = 0) (490) (1-9264167) [9 0.3041" = 0.2403 m4 i foneEES19 Nv Oo) wT Test(2) Fall 2017 Dr. M. Hamed Time 1% hr 27/32/2017 1-(a) Define the threshold voltage Vr . (b) When Vp =0 , Vris given by Vro = ms - Qu/Cox + 21 + (1/ Cox) [2eqNa (20° 1 2 3 4 | Explain what each term (from 1 to 4) represent. {c) What are the main assumptions in deriving the threshold equation of part (b) ?. (d) If Ver 0 How would you modify the above Vr equation of part (b) ?. then write the Vr{Vs) equation . 2- Foran n-channel MOST with n* polysilicon gate , given Ve=0, L=1ym , W=SOum, Xoe=100A, Na=5xi0% cm , pa=350 em?/V.sec , Qss/q = 5x10" cm? and T = 300K. Using the simple MOST I- V model Calculate / a) The threshold voltage Vr « b) The drain current Ip for Ves =1.5V and Vos=0.3V. ¢) The drain current lo for Ves=1.5V and V. OV. d) The drain current Io for Vos =2.5V and Vos=1.5V. e) Calculate gm « e) Do you think the above calculated currents are over or under estimated using this simple model compared to a more accurate model , explain your answer « 3- Asolar cell of area A= 10 cm? , fabricated froma semiconductor with E,=2 eV. {a) Ifthe solar cell is exposed to monochromatic light of frequency f= 60x10"? Hz and with power intensity of 500W/m? . assume each photon generate 1 EHP uniformly throughout the cell . Calculate the short circuit current Isc. (b) Repeat part (a) If f= 430x10"? Hz. At T= 300K : Eg(Si) =1.12eV, ni=1,5x10! cm® , gx (Si) = 4.05 eV. esi) =11.9 , er(SiOz) = 3.9Pa ates Fol Bio The Abresholld vollage isthe minimum voltage shad has to} —___ CoE sl hetpgleld tasthe nike dnicoenle thetehannel adn iprint lise 180 Lg ola Oe sate. LER, —___. i Ox Con “0 O23 @ _@ ioe Mee Se ee 4£28 é hich is the voltage 4 ____. i Leo Sh a (21.1) “The semiconductor-1s.nnifocrailly. doped —__________|___ |__) The negative change pnthe semiconductor sunface is __| |__ madly due to bhe depletion change les if Vago the doplilion change will imcrense. uth opp bying |__nigotive Ve_tuhich foods toon inersose inthe oxide voltage) ond_hence the threshold voltage increnses | poe Vee (ms Os 4 90¢ 4, J2E4N Ge Va) Cox Coxal apy alent gabe 6 ns Wasa : | Xora too, Ky = Skitent > yy 23S0.cme/Vesce Os =sxlo" cat? : a) Vy = ms Qs Qa. Cox Cox be = 0.0959 On { SKi0 ) 2p. 4 9 Volt Vesxo®/ Bh ER Oe = HOS I old = 5.059 0 rr is 05 SS = Ode nn ‘ Qya-loean, Oy =-[o (a. 2anaU a) Gono) Co Co-Hs\ eX) : Qy2=3-229% 15" Clem> . Conn GoGov (635x184) (3-9) 3-45 154107 F/em* Yom (oo xis 3) ‘ Mpa =Lona (Sxid')U-6x10") .9(o-44g), 3-289 x15" 3.4515 ko? BS USiSkio® Nya 0.093 V i b) Ves stav, Vos Ves 2V 7, Host is ON L oO 0 - eee 7 ~ Tos= 0-643 mA “\ Ve5.21-5 VO =0-9V- Ves V4, HOST is ON. Sus Nas Veg Ve Most is ip soburabion es J Ios= Wa Coy» [Ves vz]* aL To. 3363mA.d).Me3=2:5N. 052k Yn ce ves oe oop T iS ONG te oF | Noss ves ve host. isin tilenrtegton.— \ a Teves..ve Noa — (vost 1_—-— Tose Win Con t See Ting aD RG AS is i en ed = d Tossed Ae a 3m a 5 9nd. * Wa Cox (ves Vel ke aver _ =, ss aia = ee ) pe “t - wes-Vr) gun = 6 ¥ natn Esch nla oe peal ual ee _ | ecomple Vz is assumed 4o be constant along the channel which | | is nod dete, because Ve-depends on the postion oflong the | | channel, the grodual channel model takes this inte accouat | ___ Sieh gives mare nerustote sulle 3)|Aincm2, Fg20eV $= s00Kio" He, Px Soouldme | phokon > 4H es ce aa Tee | Eo he a hha (6.626xI6"T. ot) = 3.9956 x16'* Joule | 4 See te - Ea 3-995¢ X15" 9-uRs. Vexie® ab Peps sccmiies. cintent fla i Dud Oe ER | 8 keTa 9 (We) dent (3.9456 Kg '9 + Nee M oetgrge fe 28.2 XI oN EH j—assuming of EHP s participate wncuncat gen Pe. stasis —— 6418!) Cros, sat! ogoi a aes — ree | i bse 0X10 He Ea hin (6696 M6") (u30 t10'2) = 9. 24a Ki" Toul ae © B= (2.2340 x15") L-BareV aa | Gee xis!) »E SE no_E HP’, oh he created 4 Tscxzena4 : AL pln Os 4 Qu-- db koe - ope Ge: -Gor(ves-vi)" 7 Yes - VF: EE 519 Final Exam Fall2015 Time 3 hrs 2/2/2016 Or, Hamed & 1- Short Answers / Calculations : y 1.1) Define a work function of a material” Cs ev). 1.2) Calculate the wavelength of light required to remove an electron from gold(of adm 1.3) Ifthe intensity of the incident solar radiation is 1.36 W/cm? on silicon sample of thickness 5x10 cm at T= 300K . If the wavelength of the incident photons are 1500nm, calculate the generation rate of EHP’s. > o> nine 0 ’ > 5 >. bf 1.4) Repeat (1.3) If the wavelength of the incident photons are 700nm . 1.5) List the important ideas in quantum mechanics ; 1.6) An electron moving with velocity of 2X10° cm/sec , determine: / (a) the electron momentum —_(b) Its deBroglie wavelength _(c) the electron energy . 1.7) Explain why many MOST models exist despite the fact that some models are more accurate than others. 1.8) In MOST the current Ip can be due to drift , diff nor both. When it is due to diffusion 2. 1.9) For the MOST, when or where the gradual channel approximation is violated ?. 1.10) The charge distribution of MOS structure under inversion is shown , note each charge is distributed over a finite distance/width. Sketch the electric field € (x) , Y |2- Consider MOS structure on p-type silicon substrate . assume the oxide is free of charge (i.e. Qss=0) 2) Derive from principles the threshold voltage ( Vr) expression . b) Show that under inversion the inversion charge is Quy =-Cox(Ve - Vr) ¢) For MOS with p*- polysilicon gate, oxide thickness Xox= 12 nm, Na= 8x10" a Calculate Vz . [ note/ for MOS Vg is the gate voltage with respect to bulk-: Usa) Assume T=300K, Eg(Si) = 1.12 eV, ni = 1.5x10"° cm” , er(Si) = 11.9, er(SiO2) = 3.9, qXsi = 4.05 eV 3- Consider the nMOST shown with Ve >Vr, Vs R.B *] i—_ a) List all the assumptions on which the gradual channel approximation is based . b) At a position y in the channel , write the == “Fn expression of the threshold voltage V+ (y) . ¢) At a position y in the channel , write the expression of the Quy) - d) Show that Qin{y) can be approximated as, ily) =-Cox {Vos -Vr - mV(y) } and hence find m. [note/ for MOST Vc, Vo and Vp voltages are with respect to source | 4-The average intensity of synlight on earth surface is 1 KW/m is at a wave length of 800 Am , T=300K, Eg(Si) = 1.12 eV a) Calculate the photon flux . b) Whatis the percentage of the photons energy that is converted to heat ?. cJAssume the photon flux is incident on a silicon pr-junction solar cell of area 1cmX40 cm and with Io=10%A. Alsoassume each photon create 1 EHP , calculate: i) ii) + assume this intensity » Voc im, FF, 4 5- An ideal metal-semiconductor rectifier is formed from metal with a¢, substrate with Nd = 2x10" cm” assume T=300K, qxsi= 4.05 eV , Eg(Si) = 1.12 eV, ni a) Draw the energy band diagram under equilibrium . b) Draw the energy band diagram under flat band . ¢) Calculate ade , ab, d) Under equilibrium calculate Xs and Emax =5.1eV, n-type silicon 1.5x10" cm? ) What should be done to make an ohmic contact to this n-type substrate (with the same metal used in formation of the rectifier) ?. Some constants you may need/ » €o = 8.854x10™ F/em , h =6.625x10™ J.s , K=1.38x107°J/K , molfree electron) = 9.1110" Kg,ad Liebe i ude nc it odd a J {_ duty 8m SPW a Di a be spin. he (G casnd”) anit) nf ICE X10 'S) pon a DHRU on = fed: 2 = 9x0 Ta3ack —— see] < Gs Gx) = fo ——— —® GS00 Kio 4) E, etgsurg's 5 4 MEE Te RIO" * dL Since Capt is Doss than Ey of Sima E's ane gestae, Gln yet ———— laut enone A Foncte= Nem (Esse uSN Csi) aa 223 s5" Joule Jz star G0 xie"*) Eabeton= yaad Bie") = 13 350V Wexio*) i ‘ if Ja Pin = (npn) (Eon) tec fio 1.36 a4 FE x10'* photon Jem?5 : 2-239 KIO ps Gy ney KIO? __5 95S K IO" photon lea? see 7 Thickness: Skio% lai 6n Avex 2x 10S m/e co Demy a 14: s5 Ia M108) = 1.229 X15 kgm ae hm (6-625xi0)/ Capo yiet). 6-656 A” 2 / gm x (12222K16)* / 20 4: H18") (1-6 X15'9) 113d eV| Ost Pen ay DSi Dea, Pala, Pan Bi | taxa epee | es ubhie-niven 0 ges =f4 Made Ge pane Ay ted el ; a e | fan Etmeol= 1NA ad i i | t Na xd* 26 Os +2 (6lwamd) See Xs onda [aes I i ; Os Gan Teg now Mle. = Eon Acbs Qe ON. eee sn | the voltage required to achieve inversion 13 Wt hen het eaten 1 | voltage isincveased above Vrabeesellsin increase. in dhe. zo | fared | aversion change whiletne depletion change remains contort —}——__ qustealits Qs: ne 1-5 Kio} One - Spe anaes) 2 142K dt elem? (eee ti 8 @B9)¥s5 x15") 2. BAGKIG® Elem Ey (550s) = =o eV N= VER, 2@¢ Qo Com = kt _@ a0. Brig \ zo Hoy 2 X ox 12% 10-> i HoS Sol 20.461 Vr = 0.461 y 2Coc¥os) > =(4 3x16"). ots (1236109) be Ege Capea billy os ee ed ela }——Reuys= sCosLV eG Vea .2@e Weyl st Sa Vo. write down the wave function in: . > ; €* (i) region1 . E tS x a ff © Gil) region. ria vo (et @* (ii) what boundary con: i” gl to find the wave functions coefficients. ° x Ge 2112) Derive the capacitance of a Schottky diode ( assume n-type Si). is G_ (P)ASchottky diode of area A= 100x100 um" , C-V measurements were done resulting in,” e C=5.09 PF when Vg=1V and C=2.73 PF when Va=5V . Find the substrate doping concentration and the semiconductor barrier voltage (the built-in voltage ¢)) . assume : 300K , €,(Si) = ni=1.5x10" em, qxsi= 4.05eV. i.oxlo” 3-Assume an MOS structure with p-type substrate . Starting from Poisson’s equation , derive the 4 @e semiconductor capacitance under the flat- band condition ( Hint : during C-V measurements Vo =Ve(DC) + vglac) then Vc=Vrs +vglac) assume vg(ac) slightly bend the energy bands + ¢) ~ ee ap~[e aac ye = Gb it E-| pee oe Cx Gh = 4- For n-channel MOST , with Vs=0, Ve#Oand Ves >Vz . The inversion charge Q,(y) can be . approximated as : Quly) = - Cox Ves = Vr - mVcsly) J a) Findthe factor m. | What does m account for ?. G _ b) Derive Ipsin the linear region . G _ ¢) Derive Ipsin the saturation region . e 5- A Si solar cell of area 12 cm x 12 cm, the top contact cover 10 % of the top area under AML.S. solar irradiance ( 1kw/m? ), the photocurrent density is_38 mA /cm? and the open circuit voltage is 0.68 V. (4a) Compute the diode saturation current Is. b) Plot the I-V characteristics . — C) Plot the P-V characteristics of the solar cell. [5S d) Calculate the fill factor (FF) e) Calculate the conversion efficiency n. PAW Asa >) AAmies EES1a Fina econ Fel ot ee ———Meouek 1 28 Ve 271 Wins Dt 7 22 We J ~ Ei Weed 4 dy (6 Vc Meat Leb Nes e z[= \* |i) in_region Tv =o 2 Woo dm _F Wo = Bat ee AYyjtoa 2 Bysin (kod, BeosCka) k. [ome +e ii) in_vepina TT: Vos dk? ea Det W,ios 2 Asin (had , B.cos Cio) iii) Win = Lo) W101 = W,.or Mla pict decivakive of the wove function musk te cocdinnaus | DV} = DV | oe IS De lero ) Adena) = Jerto. 2} on From poissan’s equation: D2 WwW. .-8 (na) Dae Fa 2 3 2 fin 2 2% Np, Bors 29No x Om € € a ton bao I OS a Yt — - Ee € — € =De Bao Non A jC on dQ ava dived Cea Gn nnnrnne 2 -reverse.wolbage ron eS oe EaNom (5.098 (2.43 82 T* Gs i ep a EY No Ciooxtoo X16" }*Bote S96 Ny 2Gp iy al= x= 26a (ae Va) Vion 4. 2 (ace+Va) 2 Qniyr= Cox ve Neon 202 Veg 26 Wa Geese) — Vou 264 Nah Cox 1Cox (@Graval »NVp= Ves, op CC ANACLOR VO) Cox a + Qatyin Cox [Ve Vo { 2EAWA 4 Mey ( acon Sage aNd 2 Qary) == Cos [vesVe mViyil suis Mn 1 2EtNA 2Cor J2Ge svg va calf eda a : Body bio. the inversion chorige Lb) Tyea = Qooys Mgeyr Wl =f Wabi Qnty £. Tag == Wh, Gary =DVivy t vos ey Tag Lb = WainCox [ (Ves-Vr) Vos mais" | Tosc linear Coy [ (ves) Vp =m Vos" | 4). | The MOST enters solurcbion whon Qntli =zer0 on =Cox [ves Ve mVoscall , Vos cab. Ves-Vr_@ = | 5. Tosrsotr 2 Wuncos [ (Wee Nr)t or Wes_vel* J L mm mae Toecsobra Wn Coy (Ves -Vr)* at m———5)|-Aa12x12 om? , “Tap contact cover love, Pin= tkivdm? Ts 38 mA/em? Noc = 0.62V. p)Nor= Vin On ( Escu te) ies 96% 20.0254 tn f £38 x16?) (12x12) COA) 6-68/0.0258 as We 38X16 MAKI) Cag) 41 = Tos te85 xis" 6 hb) “1 Ted: 1 Noe c) Ta plot the Pv chamcberistics first we must Jind Vo aad Im a EY eth Sit tale BE acc Ti Sa A 2 cag lle aN Nik ta at (vm 1) o = Isc Te To Vin 7 Nn Jin Tse I> Bayer) Va Vip Dn ( Tsc/To ot) Viviane! | using dHlerodion to pend Vine Nn Ru os 0.6.0: O-6 9-593. o-$42___¢-Sq2____, Nm=a:sq3W i, me Tsenta(eO Wae p | Pens Im Vin = 9.2.9! Wott- d)) Fes (Vm Im) 22-32 = 0-242 Wood Isc) Co-G8) (BBXIT? KIDKIZKO-4) : hy WV mim) 9.32 Kino 2 14-623 72 Bin Toon X(2KIZKIO)