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  • MG75J1ZS50 ToshibaSemiconductor

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    Widmar Andres Diaz Correa
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    MG75J1ZS50_ToshibaSemiconductor

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    5 views5 pages

    MG75J1ZS50 ToshibaSemiconductor

    Uploaded by

    Widmar Andres Diaz Correa

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
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    TOSHIBA MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J1ZS50 HIGH POWER SWITCHING APPLICATIONS. Unit in mm. MOTOR CONTROL APPLICATIONS. © The Blectrodes are Isolated from Case. © High Input Impedance © Includes a Complete Half Bridge in One Package. c _— 1 ¢ Enhancement-Mode © High Speed : 80 yes (MAX.) (I ter=0.15 8 (MAX.) (ip=75A) ip © Low Saturation Voltage Fi Vox (sat)=2.70V (MAX,) (Ig=75) "| [oe a [autos EQUIVALENT CIRCUIT B2 jsEDEC C1 zo [AS 1 [TOSHIBA Weight ; 202g (yp) E1/C2 G2 (82) MAXIMUM RATINGS (Ta =25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Vors 600 v Gate Emitter Voltage Vors £20 v pe_ | i Collector Current c A ams_| lop 150 Forward Current, De | tp 3 A ims_| Ip 150 Collector Power Dissipation (e=25°C) Po a0 ¥ [Junction Temperature 7 150 ro Storage Temperature Range Taig —40~125 °C Isolation Voltage Visol | 2500 (ACI min) | V ‘Screw Torque (Terminal/Mounting) | — 3/8 Nm 951001 © TOHImA « conmmaly wong fo mprove fhe Guill) ond te relabiny of Wy produce, Nevanhaen_ semconducc, dances Ty general cn ‘SaNIBA product to cbserc standstds of ately ad to avo stuatlons in which malncden of falule S's TORNBA prod could calse 1 oP Rumat' le bidly ror amege to pense i devaocii your Selita pltie eaure Gat TOGA, proba ae used writin pected Santee sangeet Wola he Bent ree oduss specenides Nea Beals eae mind the preniee aed coibons cet tons TOSitaeSemiendue: Relay Handbook 7997-03-03 15 TOSHIBA MG75J1ZS50 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | TEST CONDITION MAX.|UNTT| Gate Leakage Current Tans _ |VGu=+20V, Von=0 £500| nA Collector Cut off Current, Ices _ |VcE=600V, Vor 1.0] mA Gate-Emitter Cutoff Voltage Vox (om) [Io-7.5mA, Vop-5V ao] Vv Collector. Emitter Saturation Voltage | Von (sat) [I0=754, Von=15V 2.70] V ‘Input Capacitance Ces [NOB=IOV. Vew=0. — | pe ‘Turn-on Delay Time| ta (on) 0.16 ¥ fd(on) a ductive Load Rise Time tr 0.24 Switching Time fo" Time ton 080\ 5 Turn-off Delay Time| ta (off) 0.40 Fall Time if 0.30 Turn-off Time ‘off 1.00 Forward Voltage VE 280] V Reverse Recovery ‘Time ter 0.15| ps Transistor Stage 0.82 Thermal Resistance -) *ciw Reh (-<) 0.60 Note 1 Switching Time Test Circuit & Timing Chart or TSE ae RS IE ge OR By implication or ofterwie Graer any intellectual propery or ote" righ he mformaton cortanes herein & mbjet to change who ° Pas eBeSe aN cacao Pe ee | 7997-03-03 2/5 TOSHIBA MG75J1ZS50 Io = Vor Io = Vor — 1 1 a . TAFE . pe: 2 i 24 D i ss i i 8 T 8 ‘common exarrer g ‘connON exe g Terta8 5 Vor=10v + 8 Lt d t— b ——t 1 COLLECTOREMIITER VOLTAGE. Vor: () = Vor 1 su z [fy s = 195] - 5 ay 5 a | : ; common marten E if i ace g 7] g ie=soa VS A | 3 | t t COLLCTORMITER VOLTAGE Vex > COLLECTOR-EMITTER VOLTAGE Vox Vor - Var a ) GATE-EMITTER VOLTAGE Veg W) COLLECTOR MITER YOLENGE Vow GATE-EMITTER VOLTAGE Vox Ver - Vor coMRON EMITTER nD GATE-EMITTER VOLTAGE Vor () 7997-03-03_3/5 TOSHIBA MG75J1ZS50 109 Ic - Vor - Yee, Var = Qc compara | a sg 2 | vex-sv 8 Nosh = 5 | 2 “Deel a E 3 0 z i, H g 0 : 8 Em om , Ee é 2 E bo i coumox ewirmen | : LA woe i Sa a a CATERER VOLTAGE Ve cuance @¢ «0 4 ton, td (on), tr — IC ton, td(on), tr — RG 3 2 eager a i : os E ns ‘COMMON EMITTER : 2 om Vopetiey 2 oo z i E om z i ease z © ool = e160 © ool 0 30 Teo a0 COLLECTOR CURRENT 1e

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