i7 SGS-THOMSON IRF840/Fl SF wicrozecrromes IRF841/Fl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss_| Rosie | to TRF840 Sov |<08a) BA IRFe4oF! Sov [<08a | 45A TRFeaT 450V | <0852 8A IRFe41FI 450V [<0850 45A # TYPICAL Ros(on) = 0.74 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED = REPETITIVE AVALANCHE DATA AT 100°C ‘APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING. Oe poo ATT eco «SWITCH MODE POWER SUPPLIES (SMPS) = CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER SENT INTERNAL SCHEMATIC DIAGRAM 0) xo) ABSOLUTE MAXIMUM RATINGS [Symbol Parameter Value unit IRF a4o_| eat | a40Fi_| Bair Vos _|Drain-souree Voltage (Vas = 0) soo) 450 | 600 | 450 | Vv Voak |Drain- gate Voltage (Ras = 20 KO) 500 | 450 | 500 | 450_| v Ves _|Gate-source Voltage 20 Vv 1p [Drain Current (cont,) at Te = 25°C. 3 @ as earaea| aTA 1p Drain Current (cont.) tT. = 100 °C si 61 | 28 | 26 | A Tou(e) [Drain Current (pulsed) 3 32 32 zie Ay icy [Total Dissipation at Tz = 25°C 125, 20 w Derating Factor 1 0.32 °C Viso Insulation Withstand Veltage (0G) = 2000 Tug [Storage Temperature 65 10 150, za T__[Max. Operating Junction Temperature 150 °C (=) Pulsowieth Imied by sale operating area November 1996 a)IRF840/Fl - IRF841/F THERMAL DATA To-220 | ISowATT220 Rinjcase [Thermal Resistance Junction-case Max. 312. Pow Rijaro [Thermal Resistance Junction-ambient, Max 625 Pow Ries Thermal Resistance Case-sink Typ 05 Pow T\__ [Maximum Lead Temperature For Soldering Purpose 300 86 AVALANCHE CHARACTERISTICS ‘Symbol Parameter Max Value Unit lan [Avalanche Current, Repetitive or Not-Repetitive 8 a (pulse width limited by T, max, 5 < 1%) Ens Single Pulse Avalanche Energy 510 m (starting T,= 25°C, Ip = lan, Voo = 25 V) Ean [Repetitive Avalanche Energy re m™ (pulse width limited by T, max, 8 < 1%) lan [Avalanche Current, Repetitive or Not-Repetitive 4 A (Te = 100 °C, pulse width limited by 7, max, 8 < 19%) ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | unit Vienioss |Drain-source To = 250 HA. 0 Breakdown Voltage for IRF840/840F| 500 v for IRF841/841Fl 450 v loss [Zero Gate Voltage Max Rating 25 | HA Drain Current (Vas = 0) Max Rating x0.8 Te= 125°C 250 | WA lass |Gate-body Leakage 20V 100) nA Current (Vos = 0) ON () ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Vase [Gate Threshold Voltage [Vos = Vas _lo= 250 uA 2[3sf[4sfv Rosin) [Static Drain-source On [Vas = 10V Ip=44A o74 [oes | a Resistance To(en) [On State Drain Gurrent [Vos > love) x Rosterimax Vas 8 a DYNAMIC ‘symbol Parameter Test Conditions min. | Typ. | Max. | unit aie (*) Forward Vos > loconx Rosonims I= 44A] 49 | 6 s ‘Transconductance Cis input Capacitance |Vps= 25V f= 1MHz Vas=0 1100 | 1500 | pF Coss |Output Capacitance 190 | 240 pF Gres [Reverse Transfer ao | 110 | pF Capacitance 2n0 RO pnp ____ELECTRICAL CHARACTERISTICS (continued) IRF840/Fl - IRF841/Fl SWITCHING RESISTIVE LOAD ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit taon) | Turn-on Time Voo=200V Ip=4A 40 | 50) ne Rise Time Ri=479 35 | 49 | ns Turn-off Delay Time (see test circuit) ao | 100 ns Fall Time. 20 | 25 ns Total Gate Charge [ln= 8A Vas=10V 7 | 95 | no Gate-Source Charge Vp = Max Rating x 0.8 9 nc. Gate-Drain Charge _|(see test circuit) 33 nc. SOURCE DRAIN DIODE ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Iso [Source-drain Current a | A Isom(s) | Source-drain Current 320A (pulsed) Vso (*) [Forward On Voltage liso=8A Vas =0 aa av) tr [Reverse Recovery iso = 8A di/dt = 100 Aus. 700 ne Time Voo = 100 V T= 180°C Q, Reverse Recovery 12 He Charge ()Puked Pulse duration (+) Pulse with lmted by sale operating area OD is, daly cycle 5% Safe Operating Area for TO-220 Ly Dc. OPERATION 7 ineeat r Oe ee ae? ol * " coe Tot? * “ot Yon”) a Safe Operating Area for ISOWATT220 & He eof lox. oPeeaTion lnreat R640) 107 we? fo oF eat ‘scs-THomson SO ‘EcmonAcTSeesIRF840/Fl - IRF841/F Thermal Impedance for TO-220 K cousin 107 fsINcue PULSE. 107 10% 10 10S 10 10 Ha) Derating Curve for TO-220 Pra () oe 120 20| 4] Output Characteristics 19tA) o 2 « 6 © 4M 4n0 Sa Thermal Impedance for ISQWATT220 002 ro-2f SINGLE PULSE 10 10% 10% 10% 1077 10% aCe) Derating Curve for ISOWATT220 Pr (W) an | 30 20 0 40 Output Characteristics In (A)| a 8 4 aw D1 203040 Yoav) ‘SGS-THOMSON ‘RACRORUACTRSRICSIRF840/Fl - IRF841/Fl Transfer Characteristics Transconductance to(A) of ELT Vos >! (on) *R psfenjmox 2 16] 10 | . , / ‘ ‘ 4 2 rr a) 0 2 4 8 8 10 12 1A) Static Drai Maximum Drain Current vs Temperature Rosen) ee 1033 ras tata 209 a| Var t0¥ 1s | 10 } 4 os| 2| al oO 4 B 12 16 Ip(A) 3s 30 73 100125, (°C). Gate Charge vs Gate-source Voltage Capacitance Variations Vos(¥) 10] Von= 400 0 20 40 60 80 1000,nc) ro7y ler) 2000] 0 10 2 S040 Vos(¥) ‘scs-THomson SO BeranncmmacresIRF840/Fl - IRF841/F Normalized Breakdown Voltage vs Temperature (orm 0.9] os “300 ~~ 80 ~~ 100~=«*T, CG) ‘Source-drain Diode Forward Characteristics tnt mae] r 2 7 : a(t 7 : 0.4 0.6 0.8 1.0 1.2 Vsoi¥) Unclamped Inductive Load Test Circuit Normalized On Resistance vs Temperature oa “30 080 «100—«T CR) Unclamped Inductive Waveforms Yeenposs en10IRF840/Fl - IRF841/Fl ‘Switching Time Test Circuit Gate Charge Test Circuit ows, Ts. It * ows. 710 ST Bal)IRF840/Fl - IRF841/F TO-220 MECHANICAL DATA DM. mm neh MIN. TP. MAX. MIN. Tye. MAX. A 440 4.60 0.173 0.181 c 123 132 0.048) 0.081 D 240 272, 0.094 0.4107 o1 127 0.050) E 09) 070 0019 0.027 F ot 0.88) o.024 0.034 FA 114) 1.70 04a 0.067 F2 114 1.70 048 0.067 @ 495 5.15 194 0.203 Gi 24 27 0.094 0.106 He 10.0 10.40 0.395 0.409 Lz, 164) 0.645 Le 130 140 ost fra Ls: 2.65) 2.95) 0.104 0.116 Ls 15.25 15.75 (0.600) 0.620 Wz 62 66 0.244 0.260 Lg 35 3.95) 0.137 0.154 DIA 375 3.85) 0.147 0.151 Bio ‘RACRORUACTRSRICS ihIRF840/Fl - IRF841/Fl ISOWATT220 MECHANICAL DATA a mm inch MIN. TP. MAX. MIN. TP. MAX. A 44 46 0.178 0.181 8 25 27 0.098 0106 D 25 275 0.098 0.108 = oa 07 0.018 027 F 075 1 0.090 0099 Fl 115 47 0.045 0067 Fe 115 7 0.048 0067 @ 495 52 0.198 0204 a 24 27, 0.094 0106 4 10 104 0.398 0409 16 0.680 re 236 306 1126 1208 ua 98 108 0.385 oai7 us 159 164 0.626 0.645 uw 3 93 0.354 0366 o 3 32 ona 0.126, ° LA PONG ano