CoventorWare User Guide

CoventorWare® 10.
Using CoventorWare
www.coventor.com
Version 1.1
Coventor, Inc.
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Contact us at www.coventor.com
Doc Ver 1.1 Rev A Compatible with CoventorMP version 1.1
ii March 21, 2018 Coventor, Inc.

Table of Contents Version 10.3
Table of Contents
Section 1: Using CoventorWare

1.1: Major Components ................................................................................. U1-2
1.1.1: Console.................................................................................................................... U1-2
1.1.2: Material Properties Database .................................................................................. U1-2
1.1.3: Process Editor.......................................................................................................... U1-2
1.1.4: Layout Editor............................................................................................................ U1-2
M
1.1.5: Solid Model Builder .................................................................................................. U1-3
1.1.6: Preprocessor............................................................................................................ U1-4
1.1.7: Field Solvers ............................................................................................................ U1-4
Solver Access .......................................................................................................... U1-5
Scripting................................................................................................................... U1-5
Visualizer ................................................................................................................. U1-5
Query Manager........................................................................................................ U1-5
1.2: Document Conventions ......................................................................... U1-6

1.2.1: Font Conventions..................................................................................................... U1-6
1.2.2: Icons ........................................................................................................................ U1-6
1.2.3: Page Numbering ...................................................................................................... U1-6
1.2.4: Tutorials ................................................................................................................... U1-7
1.2.5: Screen Images......................................................................................................... U1-7
1.2.6: On-Line Help............................................................................................................ U1-7
1.2.7: Other Information Resources................................................................................... U1-7
1.3: CoventorWare Conventions .................................................................. U1-8

1.3.1: Coordinate System Conventions ............................................................................. U1-8
1.3.2: Units of Physical Quantities ..................................................................................... U1-8
1.3.3: Numerical Values Displayed in User Interface......................................................... U1-9
1.3.4: Units Displayed in User Interface........................................................................... U1-10
1.4: Licensing............................................................................................... U1-10
1.5: CoventorWare Console........................................................................ U1-11

1.5.1: Dependency Tree .................................................................................................. U1-12
Right Click Functions ............................................................................................. U1-13
1.5.2: List View................................................................................................................. U1-14
1.5.3: Job Queue ............................................................................................................. U1-14
Job Queue Icons ................................................................................................... U1-15
Job Queue and the Dependency Tree .................................................................. U1-16
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1.5.4: Scripting Console ................................................................................................... U1-17

1.5.5: Log View ................................................................................................................ U1-17
1.5.6: Properties Display .................................................................................................. U1-18
1.5.7: Icons....................................................................................................................... U1-18
1.6: Dialog Overview ....................................................................................U1-20

1.6.1: Project Browser...................................................................................................... U1-21
Project Functions ................................................................................................... U1-21
1.6.2: Create New Analysis.............................................................................................. U1-22
1.6.3: Database Browser.................................................................................................. U1-23
1.6.4: Run Analysis .......................................................................................................... U1-24
How to Run a Batch Simulation ............................................................................. U1-24
1.6.5: Delete Logs ............................................................................................................ U1-26
1.7: Common Button Functions..................................................................U1-26
1.8: File Types and Organization ................................................................U1-27

1.8.1: System Resource Files .......................................................................................... U1-27
Database Files....................................................................................................... U1-28
MPD Files .............................................................................................................. U1-30
Process Files ......................................................................................................... U1-30
Layout Files ........................................................................................................... U1-30
1.8.2: Input Files............................................................................................................... U1-30
Database Files....................................................................................................... U1-30
Model Import.......................................................................................................... U1-30
1.8.3: Export Files ............................................................................................................ U1-31
1.8.4: Execution Files....................................................................................................... U1-31
Temporary Files..................................................................................................... U1-31
Log Files ................................................................................................................ U1-31
1.8.5: Tutorial Files........................................................................................................... U1-31
1.8.6: Naming Restrictions ............................................................................................... U1-32
1.8.7: Directory Structure ................................................................................................. U1-32
1.8.8: Setting Up a Typical Project................................................................................... U1-34
1.9: Design Considerations.........................................................................U1-35

1.9.1: Fabrication Description .......................................................................................... U1-35
1.9.2: Layout .................................................................................................................... U1-35
1.9.3: Meshing.................................................................................................................. U1-36
1.9.4: Computation Time Requirements .......................................................................... U1-36
1.9.5: Accuracy ................................................................................................................ U1-37
1.10: Enhancing Productivity......................................................................U1-37
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1.10.1: How to Run an Analysis....................................................................................... U1-37

Job Queue ............................................................................................................. U1-37
Batch Mode ........................................................................................................... U1-37
Scripting................................................................................................................. U1-37
Parametric Study ................................................................................................... U1-38
1.10.2: Monitoring Execution ........................................................................................... U1-38
Testing the Setup .................................................................................................. U1-39
Reducing Total Computation Time ........................................................................ U1-39
Allowing Sufficient Disk Space .............................................................................. U1-40
1.10.3: Efficient Design Iterations .................................................................................... U1-40
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Iterated Simulations from within the Solver Modules............................................. U1-41
1.10.4: Executing a Mesh from Command Line ............................................................... U1-41
1.11: Environment Variables....................................................................... U1-43

Setting Environment Variables on Windows.......................................................... U1-43
Setting Environment Variables on Linux................................................................ U1-44
Section 2: Creating a 3-D Model

2.1: Solid Model Builder ................................................................................ U2-1
2.1.1: Materials .................................................................................................................. U2-2
2.1.2: Process .................................................................................................................... U2-4
2.1.3: Layout ...................................................................................................................... U2-5
2.1.4: Additional Options.................................................................................................... U2-6
2.2: Enter in 2-D... Think in 3-D..................................................................... U2-7

2.2.1: Masks and Mask Layers .......................................................................................... U2-7
2.2.2: Dark and Light Fields ............................................................................................... U2-8
2.2.3: Photoresist Polarity .................................................................................................. U2-8
2.2.4: Determining the Model Geometry ............................................................................ U2-8
2.2.5: Building and Viewing a 3-D Model ........................................................................... U2-9
2.2.6: Example: Creating a Sphere.................................................................................. U2-10
Process.................................................................................................................. U2-10
Layout .................................................................................................................... U2-11
2.2.7: Solid Model ............................................................................................................ U2-12
2.3: Tutorials ................................................................................................ U2-14
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Section 3: Material Properties Database

3.1: Access to the Material Properties Database ........................................U3-2
3.1.1: Accessing the Database from the Console .............................................................. U3-2
3.1.2: Accessing the Database from the Preprocessor...................................................... U3-3
3.1.3: Database Window Functions ................................................................................... U3-3
3.1.4: Initial Material Property Assignment......................................................................... U3-4
3.1.5: Importing Materials................................................................................................... U3-4
3.2: Material Properties..................................................................................U3-5

3.2.1: Elastic Constants ..................................................................................................... U3-6
Assigning Single Crystal Silicon Material Properties ............................................... U3-9
3.2.2: Density ................................................................................................................... U3-14
3.2.3: Stress ..................................................................................................................... U3-14
3.2.4: TCE ........................................................................................................................ U3-15
TCE and MemMech............................................................................................... U3-15
3.2.5: Thermal Conductivity ............................................................................................. U3-16
3.2.6: Specific Heat .......................................................................................................... U3-16
3.2.7: Electrical Conductivity ............................................................................................ U3-16
Temperature-Dependent Electrical Conductivity ................................................... U3-16
Dopant Concentration-Dependent Electrical Conductivity..................................... U3-17
3.2.8: Dielectric ................................................................................................................ U3-19
Piezoelectric Analysis ............................................................................................ U3-19
CoventorWare Coupling Coefficient Conventions ................................................. U3-21
Materials Imported from MEMS+ ........................................................................... U3-24
3.2.9: Viscosity ................................................................................................................. U3-24
3.2.10: Piezoresistive Coefficients ................................................................................... U3-25
3.2.11: Computing Poly-T Values .................................................................................... U3-27
3.2.12: Computing Table-T Values .................................................................................. U3-27
3.2.13: Custom Properties File......................................................................................... U3-28
*conductivity........................................................................................................... U3-29
*damping................................................................................................................ U3-29
*dielectric ............................................................................................................... U3-29
*elastic ................................................................................................................... U3-30
*electrical conductivity ........................................................................................... U3-31
*expansion ............................................................................................................. U3-31
*joule heat fraction ................................................................................................. U3-32
*piezoelectric ......................................................................................................... U3-32
*piezoresistive........................................................................................................ U3-33
*specific heat ......................................................................................................... U3-34
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3.3: References ............................................................................................ U3-34
Section 4: The Process Editor

4.1: Components............................................................................................ U4-2
4.1.1: Process Library ........................................................................................................ U4-2
4.1.2: Process Description ................................................................................................. U4-2
4.1.3: Step Parameters ...................................................................................................... U4-2
4.2: Substrate Step ........................................................................................ U4-3
M
4.3: Modeling Actions.................................................................................... U4-4
4.3.1: Deposit Parameters ................................................................................................. U4-4
Planar Fill and Stack Material .................................................................................. U4-4
Conformal Shell ....................................................................................................... U4-5
4.3.2: Partition.................................................................................................................. U4-11
Example................................................................................................................. U4-11
4.3.3: Round Corners....................................................................................................... U4-13
4.3.4: Straight Cut Etch Parameters ................................................................................ U4-15
4.3.5: Delete Parameters ................................................................................................. U4-19
4.4: User-Defined Step Definitions............................................................. U4-20

4.4.1: Etch Steps.............................................................................................................. U4-20
Anisotropic Wet Etch, Frontside, Backside............................................................ U4-20
Generic Wet Etch .................................................................................................. U4-22
Generic Dry Etch ................................................................................................... U4-22
Deep Reactive Ion Etch (DRIE) ............................................................................. U4-23
Release Dry Etch and Release Wet Etch .............................................................. U4-23
Stripping ................................................................................................................ U4-23
4.4.2: Deposition Steps.................................................................................................... U4-23
Thermal Oxidation ................................................................................................. U4-23
Generic PECVD..................................................................................................... U4-24
Sputtering .............................................................................................................. U4-24
Evaporation ........................................................................................................... U4-24
LPCVD................................................................................................................... U4-24
Spin Casting .......................................................................................................... U4-24
4.4.3: Process Sequences ............................................................................................... U4-25
Silicon-On-Insulator (SOI) ..................................................................................... U4-25
Ion Implantation Surface........................................................................................ U4-25
Electroplating ......................................................................................................... U4-27
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Lift-Off .................................................................................................................... U4-27

LIGA....................................................................................................................... U4-28
Anodic Glass Wafer Bonding................................................................................. U4-29
Silicon Fusion Bonding .......................................................................................... U4-31
4.5: Foundry Processes...............................................................................U4-32
4.6: Menus.....................................................................................................U4-32
4.6.1: File ......................................................................................................................... U4-32
File Properties........................................................................................................ U4-33
4.6.2: Edit ......................................................................................................................... U4-33
4.6.3: View ....................................................................................................................... U4-34
4.6.4: Tools ...................................................................................................................... U4-34
Edit Process Steps Library .................................................................................... U4-34
Options .................................................................................................................. U4-35
Foundry Folder ...................................................................................................... U4-36
4.6.5: Windows................................................................................................................. U4-36
4.6.6: Help........................................................................................................................ U4-36
4.6.7: Right Click Menus .................................................................................................. U4-36
4.7: Deposit and Etch Basics ......................................................................U4-37

4.7.1: Side Settings .......................................................................................................... U4-38
4.7.2: Conformal Deposit after a Release Step................................................................ U4-39
4.7.3: Basic MEMS Process ............................................................................................ U4-39
4.7.4: Structure of a Process File .................................................................................... U4-41
4.7.5: Building a Process Sequence ................................................................................ U4-41
4.8: Etch Conventions .................................................................................U4-44

4.8.1: Photoresist ............................................................................................................. U4-44
4.8.2: Offset...................................................................................................................... U4-47
4.8.3: Sidewall Angles...................................................................................................... U4-51
4.9: References.............................................................................................U4-56
Section 5: Preprocessor Reference

5.1: Functionality............................................................................................U5-1
5.2: Window Description ...............................................................................U5-1

5.2.1: Geometry Browser ................................................................................................... U5-2
Solid Model .............................................................................................................. U5-2
Mesh Model ............................................................................................................. U5-2
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Conductors/Dielectrics............................................................................................. U5-2
5.2.2: Canvas..................................................................................................................... U5-2
5.2.3: Geometry Browser and Canvas Interaction ............................................................. U5-3
5.3: Preprocessor Terminology.................................................................... U5-3

5.3.1: Model Definitions ..................................................................................................... U5-3
5.3.2: Mesh Definitions ...................................................................................................... U5-3
5.4: Preprocessor Flow ................................................................................. U5-4
5.5: Solid Modeling Operations .................................................................... U5-5
M
5.5.1: Partitioning ............................................................................................................... U5-6
Partition Using a Plane ............................................................................................ U5-7
Partition Using a Block ............................................................................................ U5-9
5.5.2: Applying Transformations ...................................................................................... U5-11
Translation ............................................................................................................. U5-11
Rotation ................................................................................................................. U5-11
Scaling ................................................................................................................... U5-12
Limitations And Restrictions .................................................................................. U5-12
5.5.3: Merging Models ..................................................................................................... U5-12
Limitations and Restrictions................................................................................... U5-12
5.6: Naming Entities .................................................................................... U5-13

5.6.1: Parts....................................................................................................................... U5-13
5.6.2: Faces ..................................................................................................................... U5-14
Naming Faces on the Same Plane ........................................................................ U5-14
5.6.3: Conductors/Dielectrics ........................................................................................... U5-14
5.7: Meshing ................................................................................................. U5-15
5.8: Importing and Exporting a Model ....................................................... U5-15
5.9: Icons ...................................................................................................... U5-16

5.9.1: Z-Scale Drop-Down Menu ..................................................................................... U5-18
5.9.2: Cross Section View................................................................................................ U5-19
5.9.3: Wireframe Rendering ............................................................................................. U5-20
5.9.4: Shaded Rendering ................................................................................................. U5-20
5.9.5: Adding Entities ....................................................................................................... U5-21
Add a Plane ........................................................................................................... U5-21
Add a Wedge Region ............................................................................................ U5-25
Add a Block ........................................................................................................... U5-26
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5.10: Menu Options ......................................................................................U5-27

5.10.1: File ....................................................................................................................... U5-27
Open ...................................................................................................................... U5-27
Close...................................................................................................................... U5-27
Save....................................................................................................................... U5-27
Save As ................................................................................................................. U5-27
Append .................................................................................................................. U5-27
Save Image............................................................................................................ U5-27
Exit......................................................................................................................... U5-27
5.10.2: Edit ....................................................................................................................... U5-27
Selection Mode ...................................................................................................... U5-27
Select All................................................................................................................ U5-28
Select Faces By Plane........................................................................................... U5-28
Hide Selection........................................................................................................ U5-28
Show Selection ...................................................................................................... U5-28
Delete .................................................................................................................... U5-28
Rendering Options................................................................................................. U5-29
Set Name............................................................................................................... U5-29
Properties .............................................................................................................. U5-30
5.10.3: View ..................................................................................................................... U5-34
Previous View ........................................................................................................ U5-34
Next View............................................................................................................... U5-34
Select All................................................................................................................ U5-34
Rotate .................................................................................................................... U5-35
Pan ........................................................................................................................ U5-35
Zoom...................................................................................................................... U5-35
Fit to Window ......................................................................................................... U5-35
Zoom to Selection.................................................................................................. U5-35
Rubberband Zoom................................................................................................. U5-35
Orientation ............................................................................................................. U5-35
Redraw .................................................................................................................. U5-36
5.10.4: Solid Model .......................................................................................................... U5-36
Insert...................................................................................................................... U5-36
Partition.................................................................................................................. U5-37
Merge Layers......................................................................................................... U5-37
Delete Region ........................................................................................................ U5-37
Statistics ................................................................................................................ U5-38
Heal ....................................................................................................................... U5-39
5.10.5: Mesh .................................................................................................................... U5-42
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Add to Mesh Model................................................................................................ U5-42

Remove from Mesh Model .................................................................................... U5-42
Split Region ........................................................................................................... U5-42
Join Regions .......................................................................................................... U5-43
Automate MemMech Links .................................................................................... U5-43
Mesher Defaults .................................................................................................... U5-44
Mesher Settings..................................................................................................... U5-44
Clear Mesher Settings ........................................................................................... U5-44
Generate Mesh ...................................................................................................... U5-44
Delete Mesh .......................................................................................................... U5-45
M
Mesher Log............................................................................................................ U5-45
Automatically Merge Touching Layers .................................................................. U5-45
5.10.6: Tools .................................................................................................................... U5-45
Transform .............................................................................................................. U5-45
Quality Query......................................................................................................... U5-45
Tape Measure ....................................................................................................... U5-48
Measure Distance.................................................................................................. U5-49
Markup................................................................................................................... U5-50
Options .................................................................................................................. U5-50
5.10.7: Help...................................................................................................................... U5-56
5.11: Preprocessor Environment Variables .............................................. U5-57
Section 6: Foundry Design Kits

6.1: Teledyne DALSA MIDIS Platform for Motion Sensors ........................ U6-2
6.1.1: Basic Process Description ....................................................................................... U6-2
6.1.2: Implementation and Process Files........................................................................... U6-3
6.1.3: Contact Information.................................................................................................. U6-5
6.2: IMEPKU - Beijing University Polysilicon Process ............................... U6-6

6.2.1: Basic Process Description ....................................................................................... U6-6
6.2.2: Implementation and Process Files........................................................................... U6-6
6.2.3: Contact Information.................................................................................................. U6-7
6.3: MEMSCAP MUMPs® Processes............................................................ U6-8

6.3.1: MEMSCAP PolyMUMPs .......................................................................................... U6-8
Basic Process Description ....................................................................................... U6-8
Implementation and Process Files .......................................................................... U6-9
6.3.2: MEMSCAP SOIMUMPs......................................................................................... U6-10
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Basic Process Description ..................................................................................... U6-10

Implementation and Process Files......................................................................... U6-11
6.3.3: MEMSCAP MetalMUMPs ...................................................................................... U6-12
Basic Process Description ..................................................................................... U6-12
Implementation and Process Files......................................................................... U6-13
6.3.4: Contact Information................................................................................................ U6-13
6.4: Imec SiGeMEMS....................................................................................U6-14

6.4.1: Description of the SiGeMEMS MEMS-Only Process ............................................. U6-14
6.4.2: Implementation and Process Files ......................................................................... U6-16
6.5: SINTEF MoveMEMS PZT ......................................................................U6-18

6.5.2: 3-D Modeling and Simulation ................................................................................. U6-19
6.6: Tronics 60µm SOI-HARM Process ......................................................U6-22

6.6.1: Basic Process Description ..................................................................................... U6-22
6.7: NNFC's Surface Micromachining Process .........................................U6-24

6.7.1: Basic Process Description ..................................................................................... U6-24
6.8: References.............................................................................................U6-28
Section 7: Glossary.............................................................................U7-1
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Section 1: Using CoventorWare Version 10.3
Section 1: Using CoventorWare
CoventorWare is an integrated suite of software tools for designing and simulating micro-electro-mechanical systems
(MEMS). CoventorWare’s DESIGNER and ANALYZER modules work together to provide a complete design and
simulation work flow. The work flow starts with defining the fabrication process via the Process Editor and the Mate-
rial Properties Database (MPD) Editor, as illustrated in Figure U1-1:
Figure U1-1 Design Flow
M
The user then creates or imports a 2-D layout in the Layout Editor. The Solid Modeler uses the layout, in conjunction
with the layer stack information provided in the Process Editor, to automatically build a 3-D solid model. The user
then works in a 3-D view in the Preprocessor to prepare the 3-D model for automatic mesh generation. After a mesh
has been generated, the user can select from a comprehensive suite of field solvers that simulate the physical behavior
of MEMS devices using either the finite-element method (FEM) or boundary-element method (BEM) or, in the case
of coupled electromechanics, a combination of the two methods.
As illustrated in Figure U1-1, physical design geometry can be imported from and exported to third-party tools in
industry-standard 2-D layout or 3-D solid model formats. The MEMS-specific features of DESIGNER and ANA-
LYZER provide many advantages over general-purpose FEM tools.
CoventorWare comes with MEMS-specific content that can jump start a design effort. It includes extensive tutorials
for common types of MEMS devices. There are also Foundry Access Kits consisting of a process file, material prop-
erties database, and layout template for several independent MEMS foundries.
Some of CoventorWare's capabilities are optional and separately licensed. Your site may have licensed only a subset
of the modules described in this manual. If you are unable to access one of the modules, check with your local system
administrator to determine whether a license is available for that module.
Coventor, Inc. March 21, 2018 U1-1

For information on the latest CoventorWare features, please see the Release Notes, which are available in the
Coventor\CoventorMP1.1/Documentation and in the top directory of the installation CD.
1.1: Major Components

A more detailed overview of each of CoventorWare’s major components is given below.
1.1.1: Console
On starting CoventorWare, the Console window is the first to appear. All CoventorWare functionality is accessed
from the Console. The icons of the Console give the user access to the import and export functions, access to the
Solid Model Builder, user settings, and on-line help. The Solid Model Builder in turn gives access to the Materials
Editor, the Process Editor, the Layout Editor, and the Preprocessor. The left pane of the Console displays the models
and results for the active project in a dependency tree. The right pane has tabs for viewing a list of models or analy-
ses, the job queue, the scripting console, and the log window. At the bottom of the Console is a properties pane, which
becomes active when an entity is selected in the dependency tree or in the List View tab.
For detailed information on the Console, see page U1-11.
1.1.2: Material Properties Database

The first step in creating a MEMS design is to enter the material properties associated with your fabrication process in
a material properties database. Only the materials that are in the active material properties database are accessible in
the Process Editor and available for simulations. To access a material properties database, click on the Build Solid
Model icon in the Console, specify the database name, then click on the Materials Editor icon in the Solid
Model Builder dialog.
For detailed information on the Materials Editor and material database properties, see the section beginning on page
U3-1.
CoventorWare comes with a default material properties database that is provided for example purposes only. All
users are strongly advised to create their own database for their specific fabrication process because the accuracy of
simulation results depends directly on the accuracy of the material properties.
1.1.3: Process Editor

The second step in creating a design is to enter a description of the sequence of steps involved in the fabrication pro-
cess in the Process Editor. To access the Process Editor, click on the Build Solid Model icon in the Console, then
click on the Process Editor icon in the Solid Model Builder dialog (see page U1-22).
To create the sequence, select prototype steps from a Process Library, displayed by default on the right-hand side of
the Process Editor window. Each step has parameters that must be specified. For deposit steps, for example, you spec-
ify the material to be deposited and the deposit depth. As an alternative to creating a custom process, you may select
a complete process sequence for an independent foundry from among those listed in the Process Library. For detailed
information on the Process Editor, see the section beginning on page U4-1.
1.1.4: Layout Editor

The third step in creating a design is to supply a 2-D layout file that has layers that define all of the masks required by
the process file. There are several options for providing the layout file. One option is to use the comprehensive editing
capabilities in CoventorWare’s Layout Editor to draw the shapes that define each mask. To access the Layout Editor,
U1-2 March 21, 2018 Coventor, Inc.

click on the Build Solid Model icon in the Console, then click on the Layout Editor icon in the Solid Model
Builder dialog (see page U1-22).
Another option is to draw the layout in a third-party layout tool and import the layout in the GDSII, DXF, or CIF file
format.
1.1.5: Solid Model Builder

To build a solid model, you must specify a material database, a process, and a layout; so all of these editors are
accessed from the Solid Model Builder dialog. In the Console, click on the Build Solid Model icon to open the
Solid Model Builder.
From this dialog you can specify existing input files or create new ones. When these files are complete, click on
Build. The resulting 3-D model is automatically loaded in the Preprocessor for viewing and, from there the model can
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be meshed for simulation in ANALYZER. The Preprocessor includes export and import functions that enable
exchange of 3-D solid model files with third-party CAD tools, such as SolidWorks and UGS I-deas. For more infor-
mation on this dialog, see page U2-1.
Access to Material Database
Access to the Process Editor
Access to the Layout Editor
Builds model and

opens Preprocessor

1.1.6: Preprocessor
CoventorWare's automatic mesh generation capabilities are incorporated in the Preprocessor, which serves as a
bridge between DESIGNER and ANALYZER. Once a solid model is loaded in the Preprocessor, you select which
layers are to be meshed. The Preprocessor automatically groups the layers into regions based on their adjacency. You
then select the type of mesh to be generated on each region and can set local refinement options. The types of meshes
include surface meshes with triangular or quadrilateral faces and volume meshes with tetrahedrons or hexahedrons
(bricks). Several different methods are available for hexahedrons, including extrusion, Manhattan (for near orthogo-
nal geometries) and mapping (for geometries that can be decomposed into 6-sided volumes). You can specify local
refinement options on any layer, part, face, edge or vertex. A Quality Query in the Preprocessor allows you to view a
variety of mesh statistics to assess the quality of the mesh, and visualize "bad" elements (elements with characteris-
tics that exceed user-defined thresh holds). Generating a valid, high-quality mesh is a prerequisite for using any of the
field solvers in ANALYZER.
Meshes generated in third-party software can be imported to CoventorWare in I-deas Universal file (.unv) format,
ANSYS cdb or .rst formats, or ASCII Stereolithography (.stl) file format.
For more information on CoventorWare’s meshing capabilities, see the Field Solver Reference, beginning on page
R2-1.
1.1.7: Field Solvers

ANALYZER provides a comprehensive suite of 3-D solvers, including solvers for electrostatics, mechanics, coupled
electromechanics, thermomechanics, and piezoelectrics. With these solvers, you can perform analyses that incorpo-
rate or compute the following types of physical behavior and effects:
 capacitance and electrostatic charge
 deformations from applied pressures or forces
 coupled electromechanical behavior, including pull-in and lift-off voltage
 mechanical and coupled electromechanical behavior with full contact boundary conditions
 piezoelectric effects
 residual stress (from the fabrication process)
 modal analysis of the natural vibration frequencies of MEMS devices
 harmonic analysis of MEMS devices
 electrothermal (Joule heating), thermomechanical, and electrothermomechanical behavior
 transient mechanical behavior
 thermal boundary conditions, such as film convection, radiation, and heat flux
 coupling of package deformation to mechanical behavior of a MEMS device
 piezoresistive sensing of mechanical deformation
 gas damping effects on MEMS device behavior
 extraction of the centroids and moments of inertia of the movable parts of a device
 extraction of damping coefficients resulting from squeezed-film, slide-film, and Stokes-flow effects
Summaries of simulation results are available in tables and 2-D plots. Details of simulation results can also be viewed
in 3-D using the Visualizer, with numerous visualization options.

Solver Access
To access a solver, right click on a meshed model, and select New Analysis. This action opens a Create New Analysis
dialog that lists all the available solvers; see page U1-22 for more details.
For more information on the MEMS ANALYZER solvers, see the Field Solver Reference.
Scripting
In CoventorWare, Python scripting can be used to set up and execute an analysis. The user has the option to create a
script in a text editor or to output a script from an existing analysis. Outputting a script from an existing script is the
easiest way to familiarize yourself with the syntax required to create analysis, and this document details this method
of creating a script.
Scripting is a very powerful tool for creating simulation loops. The user can create a script that runs a solver, then
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inputs the results of that solver into another simulation. For example, the user can write a loop that runs a MemMech
simulation, then inputs that result into a MemElectro simulation. It can also be used to create a parametric study to
iterate a set of solver runs to view trends or sensitivity to design or manufacturing parameters.
For more information on scripting see the Field Solver Reference, beginning on page R9-1.
Although there is a Parametric Study function accessible from most of the CoventorWare solvers, Coventor
recommends the scripting function for a parametric study. The scripting function is more flexible and has more
options. Parametric study for CoSolveEM is only available from the scripting interface. For more information on
Parametric Study function, see the section beginning on page R10-6 of the Field Solver Reference.
Visualizer
The solver output for most MEMS models includes a significant amount of data for analysis and post-processing. The
Visualizer tool supplements this capability by enabling users to map these results graphically onto the original model
and visually analyze the solution. The Visualizer enables viewing of electrostatic fields, mechanical deformations,
stresses, thermal variations, temperature gradients, pressures, current densities, and many other parameters. Selected
parameters are color-mapped onto the 3-D model, allowing a complete surface analysis of the model after the solution
is complete. An adjustable slice plane and selected probing of interior bricks allow the entire volume to be visualized.
The Visualizer can show a timed sequence of incremental changes to a model from a parametric study and can simu-
late and animate the modal vibrations from a modal analysis solution. It includes its own animation module for cap-
turing and replaying a desired sequence. A print module captures the Visualizer screen to an output file in a variety of
resolutions.
The user can adjust virtually every aspect of the 3-D view, including lighting effects, perspective, shading, line
widths, font sizes, and scale positions, to satisfy individual preferences.
For more information on the Visualizer, see the section beginning on page R11-1 of the Field Solver Reference.
Query Manager
In addition to the predefined summary tables and X-Y plots that are produced by each solver, the user can define custom
queries that provide additional summary data on each analysis. The Query Manager is accessible from the Analysis
Results window. Queries can be performed on device surfaces, volumes, regions specified by coordinates, or between
surfaces.
For more information on the Queries function, see the section beginning on page R10-20 of the Field Solver Reference.

1.2: Document Conventions

Conventions followed in the CoventorWare documentation are noted below.
1.2.1: Font Conventions

The table below outlines the font conventions used in CoventorWare manuals.
Font Function
Bold Names of buttons
Italics File names, directory paths, icon names, field entries, and menu or
drop-down selections (implies that there is more than one option)
Courier Command line text (entered at a terminal prompt or part of a script)
Underline Hyperlinks to related information
1.2.2: Icons
Additional information or information of special note is denoted by an icon:
The stop sign highlights critical information or instructions that you must follow in order to obtain proper results.
The green arrow highlights information needed to understand the immediate topic.
The light bulb highlights supplemental information concerning the section topic or directs the user to other sections
with related topics.
1.2.3: Page Numbering

Each volume in the CoventorWare manual set has a unique letter incorporated into its page number. This letter sim-
plifies cross-references and index entries among the manuals. The table below outlines the lettering convention.
Letter
Document Title
Designation
L Layout Editor Reference
R CoventorWare® Field Solver Reference
T CoventorWare® MEMS Design and Analysis Tutorials
U Using CoventorWare®

1.2.4: Tutorials
The tutorials are designed to allow both new and experienced users to pace comfortably through the procedures. The
Advanced User Procedure column in the tutorial steps provides concise descriptions for completing the tutorial
sequences. All users should first attempt to complete the tutorials by reading only this column (and any accompany-
ing graphics), if possible. The concise descriptions allow you to think more about the problem setup and results rather
than focus on the mechanics of clicking on buttons and setting fields. For users unfamiliar with concepts or with the
software interface, the Detailed User Procedure column offers much more explanation on exactly how to accomplish
the objectives of the Advanced User Procedure column. It also offers summary notes for many of the lettered steps
(indicated with an arrow directly under the step), which explain why specific settings are used or why certain results
are displayed.
1.2.5: Screen Images
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For consistency, images from the Windows operating system are used in all illustrations. The appearance of Coven-
torWare’s user interface is virtually identical for the Linux and Windows platforms. There are only some superficial
differences in attributes such as window borders and fonts, which are caused by the platform software.
1.2.6: On-Line Help

This entire manual set, with hypertext links to cross-references, table of contents entries, and index entries, is avail-
able in Adobe Acrobat PDF format, which may be viewed in Adobe Acrobat Reader XI or higher for Windows and
Adobe Acrobat Reader 9.5 or higher for Linux. The on-line manuals are distributed as part of the installation and are
located in the /Coventor/CoventorMP1.1/Documentation directory. The Reader software may be downloaded from
the Adobe Web site at www.adobe.com.
Most software dialogs have help icons in the lower right corner. Clicking on one of these icons opens the documenta-
tion to the location that has the relevant information. For instance, if you are in the MemMech SurfaceBCs dialog and
would like to access information on its various options, click on the help icon to open the documentation at the loca-
tion of the MemMech SurfaceBCs reference material.
The CoventorMP Overview, available from the Console’s Master Help menu, gives an overview of CoventorWare,
with links to reference or tutorial information. It demonstrated how to search the entire pdf documentation set for spe-
cific information.
1.2.7: Other Information Resources

For up-to-date product and application information, including datasheets and design examples, please see our Web
site at http://www.coventor.com/mems-solutions/products/coventorware/

1.3: CoventorWare Conventions

Creating a successful design depends in part on understanding CoventorWare conventions. The coordinate and
design unit conventions are outlined in this section.
1.3.1: Coordinate System Conventions

The software uses a standard orientation for specifying X, Y, and Z coordinates for 3-D modeled objects. The surface
of the ground plane is oriented in the X and Y direction. The Z axis is perpendicular to this surface—which is the Z=0
reference point. Objects above this surface take on a positive Z value, as illustrated in Figure U1-2.
Figure U1-2 Three-Dimensional Axis Orientation Conventions

Z
X Z=0
1.3.2: Units of Physical Quantities

CoventorWare often displays the values of input and output quantities without showing the units. However consistent
units are used throughout the software. For each numerical quantity that appear in CoventorWare, Table U1-1 lists the
commonly used symbol and the units used in CoventorWare, and SI (International Standard) units.
Table U1-1 CoventorWare Units
DESIGNER, SI Units
Quantity Symbol
ANALYZER units (kg/μm/s/pA/K)
Acceleration a μm / s2 μm / s2
Angular acceleration1 degrees/sec2 radians/sec2
Angular input ° degrees radians
Angular velocity degrees/sec radians/sec
Capacitance C pF pA2 · s4 / (kg · μm2)
Charge Q pC pA · s
Conductivity (Electrical)2 σ pS / μm pA2 · s3 / (kg · μm3)
(kg · μm) / (K · s )
3
Conductivity (Thermal) k pW / μm · K
Current (Electrical) Ι pA pA
Density ρ kg / μm 3
kg / μm3
Diffusivity μm2/s μm2/s
Flow Φ μm3 / s μm3 / s
Force F μN (kg · μm) / s2

DESIGNER, SI Units
Quantity Symbol
ANALYZER units (kg/μm/s/pA/K)
Frequency f Hz 1/s
Heat Flux q pW / μm2 kg / s3
Length l μm μm
Mass m kg kg
Moment of Inertia Ι kg · μm2 kg · μm2
Piezoresistive Coefficients π11,π12,π44 MPa-1
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Poisson’s Ratio ν
Power P pW (kg · μm2 ) / s3
Pressure p MPa kg / (μm· s2)
Specific Heat Cp pJ / kgK μm2 / (K · s2 )
Stress σij MPa kg /(μm· s2)
Temperature K K K
Thermal Coefficient of TCE 1/K 1/K

Expansion
Velocity v μm / s μm / s
Viscosity (Dynamic) μ MPa · s kg / (μm · s)
(kg · μm2 ) / (pA · s )

3
Voltage (Electrical) V V
Young’s Modulus E MPa kg / (μm · s2 )

1
Note that degrees are decimal degrees (degrees/minutes/seconds).
2
Note that it is often easier to find the electrical resistivity in meters*ohms for a material, rather than the electrical
conductivity. The electrical conductivity can be computed as the reciprocal of the resistivity:
1 S -
-----------------------------
- = ----------------
ohm ⋅ meter meters
To convert to ANALYZER units (pS/µm), multiply the result by 106.
1.3.3: Numerical Values Displayed in User Interface

In some locales, a comma is used as the decimal separators. In the CoventorWare interface, the period must be used
as the decimal separators.

1.3.4: Units Displayed in User Interface

In all software screens where units do appear, English rather than Greek characters are used to represent units. Table
U1-2 lists these unit labels:
Table U1-2 CoventorWare Unit Display
Unit micro pico femto mega kilogram farad volts newton pascal watt kelvin
Label u p f M kg F V N Pa W K
1.4: Licensing
The specific modules licensed from Coventor determine whether or not you have access to the modules described in
this document. If your license does not include one or more modules, those options will be grayed out.
LMTOOLS FLEXnet Licensing is used to manage CoventorWare licenses. Once the software is installed, user inter-
action with FLEXnet is minimal.
Coventor Licensing, a separate product from CoventorWare itself, provides the easiest way to install and manage
Coventor licenses. Coventor Licensing can be downloaded from the Coventor Customer Portal at
http://www.coventor.com/support/portal/
If you have problems checking out licenses when starting or running CoventorWare or some of its components, refer
to the Troubleshooting section of the Installation Instructions.

1.5: CoventorWare Console

The window that first opens when you start CoventorWare is called the Console because from this window you can
access all of CoventorWare’s functions. From the icons along the top, you can a create or access a project; import and
export models; access the Solid Model Builder, which in turn, gives access to the Materials Editor, the Process Editor,
and the Layout Editor; configure user settings; and access the on-line help. From this window you can also set up and
execute an analysis, monitor analysis progress, and view analysis results.
The Console has these components:
 a dependency tree
 a List View tab
 a Job Queue tab
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 a Scripting Console tab
 a Log View tab
 a properties display
 icons for accessing the various functions of CoventorWare
Icons for accessing the various components of CoventorWare

Tabbed interface
Dependency
Tree
Properties
Display

1.5.1: Dependency Tree

The Dependency Tree visualizes database entity dependencies. It can be expanded to show all the project models and
meshes, which may also include simulation results. The tree will indicate the type of entity with an icon that is shown
before the entity name. Note that entity names should not include the / or \ character.
Figure U1-3 Models Dependency Tree

unmeshed
meshed model solid model
Analysis
Result
Result Group
For every project you create in CoventorWare, a project database, with a .cpdb extension, is also created. The project
database contains all the model/mesh data and all the analysis result data. The Dependency Tree allows you to
explore the contents of a project database; it lists database entries and visualizes database entry dependencies. A mesh
may have these entities associated with it:
 Analysis: This entity is a high-level grouping that contains all the results generated from one solver setup and
simulation.
 Result Group: This entity is a group of results that would be generated from a single Parametric Study step.
 Result: This entity is a single result from a solver and represents a steady-state solution, a single mode shape,
or a single timestep. It typically contains several result fields, such as stress, velocity, displacement, etc.,
which can be viewed from the Analysis Results window.
Each solver creates one or more results when the solution is complete. Each time a simulation is launched, the results
are stored in a user-designated analysis entry in the project database. Some solvers generate a single result that would
be stored as a subentity in the designated analysis. Other solvers or solver functionality may generate several sets of
result data that are stored in result groups in the designated analysis. For example, MemMech Modal solver and the
Parametric Study function create a result group for each step and/or mode created in the solution. A Parametric Study
/transient analysis creates several result groups that in turn have their own results entries. The dependency tree shows
how analysis results are related.
As noted above, simulation settings are saved with an analysis, so if you set up an analysis and do not run it, queue
it, or save it, the settings will not be preserved.

Right Click Functions

The Dependency Tree can also be used to manage the individual entities.When you right click on an entity, a second-
ary menu opens. For all entities, the following right-click menu options are available:
 Copy: Copies the selected entity.
 Paste: Becomes active if the Copy function has been invoked; it pastes the copied entity under the selected
entity. Note that the Paste action will be disabled if the selected item is the wrong type relative to the copied
item.
 Sort by Name: Sorts the subentities by name; puts them in alphabetical order.
 Sort by Date: Sorts the subentities by the creation date.
 Rename: Highlights the selected entity name and allows the user to enter a new one. Note that models that
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have pending analyses cannot be renamed.
 Delete: Deletes the selected entity.
 Edit Comment: Opens a comment box in which the user can add a comment to associate with that entity. The
comment can be viewed from the Properties pane.
 Export: Exports model or results in a format that can be used in other programs; the available file formats will
be determined by the type of entity; see page U1-18 for more details.
The content of the menu varies according to the type of entity selected.
For an unmeshed model, these additional right click options are available:
 Open: Opens the model in the Preprocessor. Double clicking on the model will also open the model in the
Preprocessor.
 Rebuild: Rebuilds the model using the process and layout originally assigned to the model. Any edits to those
files will be taken into account.
For a meshed model, these additional right click options are available:
 Open: Opens the model in the Preprocessor. Double clicking on the model will also open the model in the
Preprocessor.
 New Analysis: Opens the Create New Analysis dialog, which allows the user to select a solver and then pro-
ceed to the solver setup.
 Rebuild: Rebuilds the model using the process and layout originally assigned to the model. Any edits to those
files will be taken into account.
For an analysis, these additional right click options are available:
 Open Results: Opens the results in the 3-D Visualizer. Double clicking on the model will also open the model
in the Visualizer.
 Open Solver Settings: Opens the solver setup used to generate the analysis; all the solver settings and bound-
ary conditions are reloaded.
 New Solver Name Analysis: "Solver Name" is determined by which solver was used to generate the analysis,
but instead of reloading the solver setup, the solver is loaded with all the default settings.
 Add to Job Queue: Adds a pending analysis to the job queue, but puts it in a held state. To start the analysis,
select it in the Job Queue pane, and click on the Release icon.
 Save Script: Writes out the solver setup to a script; which can then be modified or executed at a later time.
 Delete Results: This option deletes the results associated with the analysis, but preserves the analysis setup.

 Export Settings: If an analysis is selected, this option will export the model and the solver setup used to gen-
erate the simulation results, but without the results. This option is helpful when users want to share simula-
tion setups but avoid transferring large database files with results.
Coventor recommends that you export settings to a GBAK using a new filename rather than overwrite an existing
one. If you try to overwrite an existing GBAK file that has analysis settings, it may fail.
The right click menu also includes a New CoSolveEM option if a MemMech analysis is selected. These options will
load the MemMech settings into the CoSolveEM solver, thereby eliminating the need to set those boundary condi-
tions in the solver. Note that the CoSolveEM solver will use the setup from this analysis, but will not use the results.
For an individual analysis result, Open is the only additional right-click option; it opens the result in the Visualizer.
1.5.2: List View

This tab displays the database entities associated with the selected database entity in the dependency tree. The entity
selected in the dependency tree determines which entities will be displayed in the selection list. For example, if the
top-level Models entity is selected, all unmeshed and meshed models are displayed in the list. If an individual mesh is
selected, the analyses associated with that mesh are displayed.
The selection list features three columns: Name, Type, and Creation Date. The entries can be sorted with respect to
any column by clicking on the column head.
To select an entity for viewing or simulation, you can click on it in the selection list as well as in the dependency tree.
The same right-click functions that are available in the dependency tree are also available from the List View.
The List View’s Properties pane, located at the bottom of the tab, lists information about the selected entity, including
the day it was created and the files used in its creation. If it is a meshed entity, the List View Properties dialog will list
what kind of meshing elements were created, and node and element counts.
1.5.3: Job Queue

The Job Queue tab allows the user to monitor simulation progress. The Job Queue tab becomes active when a simula-
tion starts. It lists the queued jobs with icons that indicate the job’s status. If no simulations have been run during that
session of CoventorWare, the job list will be empty. You can also click on the tab at any time to make it active.
Figure U1-4 Job Queue Dialog

The Progress tab displays the simulation progress for the job that is running. The Properties tab, shown below, shows
which settings file and solver are being used with the current job.
The Job Queue functionality also allows the user to add simulations to a list of simulations without actually running
them. The user can then start the simulation(s) at another time. To add a simulation to the queue, select the Add to Job
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Queue and run or Add to Job Queue and hold option in the Save Analysis dialog (see page U1-24). Note that when
you restart CoventorWare or switches projects, the Job Queue is not preserved; so make sure the Queue is empty
before switching projects or closing CoventorWare.
Job Queue Icons

The Job Queue tab has several icons that allow the user to manage the queued jobs, which are described below.
Delete
This option allows the user to delete the selected job if it is not running.
View Results
This option allows the user to view the results of the selected job if it is finished. It opens the Analysis Results win-
dow, which gives the user access to numerical, graphical, and 3-D solver results.
Release
This option releases a job that is on hold, changing its status to Pending.
Hold
This option holds a pending job, changing its status to On Hold. This option can be applied to one or more jobs. Pend-
ing jobs that were below the held job in the queue will then be executed before the held job.
Abort
This option stops the execution of the active job. It is enabled only if the selected job is running.
Move Up
This option moves the selected job up one spot in the queue.
Move Down
This option moves the selected job down one spot in the queue.
Release All Held Jobs

This option releases all held jobs and allows CoventorWare to run them. The held jobs do not need to be selected.
Clear
This option removes all jobs with the status of Done from the Job Queue.

Job List Icons

Each job in the Job Queue list has an icon that indicates its status. The icons are explained below:
Icon Description
Indicates the job has been held
Indicates the job is pending
Indicates that the job is running
Indicates that the job has completed
Indicates that the job was aborted
Job Queue and the Dependency Tree

The Job Queue permits users to do work in the Console while an analysis is pending or running in the background;
the user can access the Dependency Tree and therefore access analyses that have been queued. Usually, the Depen-
dency Tree can be used to rename, delete, copy, or export models and analyses. But if an analysis has been queued,
the user is restricted in the operations that can be performed on that analysis and its associated model. The table
below summarizes the Dependency Tree operations that are allowed if an analysis is included in the Job Queue:
Table U1-3 Dependency Tree and Job Queue Status
Operation Allowed if Analysis is

Dependency Tree Operation
Pending, Not Pending,
Running Finished
Queued Queued
Delete Analysis Yes Yes No Yes
Delete Model with Analysis Yes Yes No Yes
Rename Analysis No No No Yes
Rename Model with Analysis No No No Yes
Copy/Export Analysis Yes No No Yes
Copy/Export Model with Analysis Yes No No Yes
Overwrite Model with Analysis Yes Yes No Yes

1.5.4: Scripting Console

The Scripting Console tab can be used to create, modify, and execute scripts. These scripts can be used to extend
CoventorWare functionality. See page R9-1 of the Field Solver Reference for more details.
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1.5.5: Log View
This tab displays real-time software activity. Use this tab to monitor software progress (installation paths, machine
information, meshing statistics, solver status, memory usage, warnings, etc.). The contents of this tab are written to
the CoventorWare.log file, which is located the user’s work directory; its location is displayed at the bottom of the tab
window. The information in the log file can be very useful for troubleshooting a simulation.
Log file location
The Log View tab also has a very useful search function. To access this function, click anywhere in the text field, and
type Ctrl + F. A Find dialog will open at the bottom of the tab, as shown below.

1.5.6: Properties Display

This pane displays information on the database entity currently selected in the selection list or in the Dependency
Tree. The information includes the type of entity, the creation date, and any comments the user has added. If it is a
model or mesh, the process and the layout file used to create it will also be displayed. If a result is selected, the Prop-
erties pane displays the creation date and the solver used to generate that result. If no entities are selected or more
than one entity is selected, the box is empty.
1.5.7: Icons
 Open Projects
Click on this icon to open the Project Browser, which allows the user to create, import, or access a project. For
more information on the Project Browser, see page U1-21.
 Export
To export an entity, select it and click on the Export icon. A standard file dialog will appear. Select the filter type,
assign a file name, then click on OK. Depending on the entity selected, CoventorWare supports these kinds of
export:
 ACIS solid model (.sat) in versions R14-R22.
 STL mesh (.stl)
 UNV mesh (.unv) that has node and element information
 Ansys ASCII mesh file (.cdb)
 CoventorWare .mpd file: this format will extract material property information associated with a model and
save it in the .mpd format. Note that any material properties changes made to a model from within the Prepro-
cessor are stored with the model in the project database, not in the default .mpd file in the Shared directory.
This option allows you to extract a model’s unique material properties information for use with other models.
 CoventorWare platform-independent database file (.gbak): If a single model or mesh is selected, it will be the
only entity exported. But if an Analysis entity is exported, this file will contain all the entities created in a
project database, including solid models, meshed models, and analysis results.
 Package deformation for MEMS+: This option is available for an analysis result, and it will export the result
in .mpf format.
 Import
Click on this icon to import an entity. A standard file dialog will appear. Depending on the file extension set in
the Filter box at the bottom of the file dialog, the appropriate import will be done. CoventorWare supports these
kinds of imports:
 an ACIS solid model file (with a .sat extension) up to version 22. Note that CoventorWare cannot import
ACIS models in versions greater than R22.
 a mesh from a universal file created with I-deas (with a .unv extension), versions 10 or 11
 a mesh from an ASCII Stereolithography file (with a .stl extension)
 ANSYS mesh file (with a .cdb or .rst extension); see page R2-31 for an explanation of these extensions.
 a platform-independent CoventorWare database file with a .gbak extension, which may contain model and
analysis result entities
An imported entity retains its original name; if it has the same name as an entity already existing in the database,
an error window appears that prompts you to rename the original entity before importing the new one. The soft-
ware will also warn you if the import failed or if the imported .gbak file had no entities.

 Build Solid Model

Click on this icon to access the Materials Database, the Process Editor, the Layout Editor, and to build a solid mod-
el from the specified material database, process, and layout. For more information on this dialog, see page U2-1.
 User Settings
Accesses the user settings for work directory, shared directory, temp directory, licenses location, and default user
interface.
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Each individual user configures these settings the first time he/she runs CoventorWare (or MEMS+). These set-
tings can be changed from this dialog. They can also be edited from the .coventorware10.rc file. On Windows, it
is located in C:\Users\%user%\AppData\Roaming\Coventor; on Linux, it is located in the user’s home directory.
For more information on these settings; see page 2-7 of the installation instructions.
To change the default location of the .coventorware10.rc file, set the COV_RC_DIR environment variable to the
desired location, using the absolute file path; see page U1-43 for more details.
 Refresh the list of models from the database

Clicking on this icon updates the list of models in the Console’s Models tree to include any models exported from
MEMS+ to the active project while it was open in CoventorWare. If the project was not open at the time of export,
the Models list does not need to be refreshed.
 Help
Clicking on this icon provides access to the on-line documentation (in PDF format). The Help icon has these op-
tions:
 Master Help: Opens an on-line PDF designed to familiarize you with CoventorWare and to help you find the
relevant documentation for a desired task.
 Using CoventorWare: Opens the on-line PDF for this document, which provides an overview of Coventor-
Ware and detailed information on functions common to the entire software suite.
 Search: Accesses the Acrobat search engine, which can be used to search the entire CoventorWare documen-
tation set and documentation for third-party software bundled with CoventorWare.
 Contents: Opens an on-line PDF that lists all the manuals in the documentation set.
 Reference: Opens an on-line PDF that lists the available reference material for the solvers, with active links
to their locations in the documentation.
 MEMS Tutorials: Opens an on-line PDF that lists the available tutorials, with active links to their locations
in the documentation.
 Installation Instructions: Opens an on-line PDF containing CoventorWare installation instructions for Win-
dows and LINUX operating systems.
 About: Opens a window that lists the current version of the software.

1.6: Dialog Overview

All user interaction is through the window-based graphical interface. Windows and dialogs open from other window
buttons or menu bar functions. Figure U1-5 illustrate the basic types of windows and dialogs. Dialogs specific to each
solver are explained in their solver-specific reference sections.
Figure U1-5 Sample Screen Types

The Console provides navigation to all parts of the software
Project Browser dialog
Solver Settings dialog
Boundary conditions
button selection
Boundary Condition dialog Edit dialog

1.6.1: Project Browser

When you first open the software, a Project Browser dialog opens, as seen in Figure U1-6. This dialog displays avail-
able projects and their associated settings files; it also allows you to import tutorial projects and to create new proj-
ects. This dialog is also accessed from the Console using the Open Projects icon . Note that on subsequent start-
ups of the software, the Delete Logs dialog may open before you can access this window; see page U1-26 for more
information on this window.
Figure U1-6 Dialog Window

Import tutorial Delete project
Create new project
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Project Functions
The Projects field lists all the current projects in your work directory (named Design_Files in this documentation).
From the Project Browser you can perform these project-related actions:
 New Project
This icon opens a dialog for creating a new project. Enter the project name in the project name field and click on
OK.
 Import Tutorial
This icon opens a dialog that allows you to import tutorial projects to your working directory. These tutorial proj-
ects contain all the necessary files for running the software tutorials.
 Delete Project
This icon deletes a selected project.

1.6.2: Create New Analysis

This dialog opens when a user right clicks on a meshed model and selects New Analysis. It lists all the available solv-
ers. Selecting a solver and clicking on Next opens the settings dialog for that solver.
The following solvers are available from this dialog:

 MemElectro: Computation of a matrix of capacitance and conductance values, computation of forces on
conductors and dielectrics; solver documentation begins on page R3-1.
 MemMech: Mechanical, thermal, electrothermal, electrothermomechanical, piezoelectric, modal, harmonic
analyses; solver documentation begins on page R4-1.
 CoSolveEM: Coupled quasi-steady electromechanical analysis and harmonic analysis of coupled electro-
mechanics; solver documentation begins on page R5-1.
 HarmonicEM: HarmonicEM functionality is now included in CoSolveEM.
 MemPZR: Uses the applied stress and the material’s PZR coefficients to compute the piezoresistive sensor’s
potential field and the resulting change in current; solver documentation begins on page R6-1.
 DampingMM: Squeezed-film (Reynolds Flow), slide-film (Couette Flow), and steady-Stokes flow analyses;
solver documentation begins on page R7-1.
 InertiaMM: Computes the mass inertias of the movable parts of the device, the centroids, and the moments
of inertia; solver documentation begins on page R8-1.
The number of solvers that you can access is dependent on the specific licensed configuration of CoventorWare.

1.6.3: Database Browser

The Database Browser dialog opens from within solver settings or boundary condition dialogs and allows the user to
select a result as a solver input. From this dialog, the user cannot open a model or start a simulation, but can only
select a result.

1.6.4: Run Analysis

The Run Analysis dialog opens when you complete a solver setup and click on Run in a Solver BCs window. From
this dialog, you can name the analysis, add it to the Job Queue, or save it for a batch run or script export.
 Analysis Label
This field is blank if a new analysis is being created. You can enter a unique name in the field, and the software
will save the results to that analysis entry in the database. Note that an analysis name should not include the / or \
characters.
If you open an analysis from the Console, its name will be displayed in the Analysis Name field, but you can
choose to save the solution results to an analysis other than the one selected or you can choose to overwrite the
displayed analysis.
 Comment (Optional)
This field allows you to add descriptive text pertaining to the simulation.
 Execution Mode
 Add to Job Queue and run: Default mode that runs the simulation in real time.
 Add to Job Queue and hold: Adds the simulation to the job queue without running it.
 Save for Batch Run or Script Export: This functionality allows you to run a simulation in the background
(without the GUI displayed) or at a later time. When you click on OK, the software creates an analysis in the
database, but does not run it. This analysis can be accessed from the Models tree; the user can then export a
script from the analysis by righting clicking on it and selecting Save Script. The analysis can also be executed
from a command line; this batch functionality is explained in more detail below.
How to Run a Batch Simulation

The following is a step-by-step procedure for performing a batch simulation in CoventorWare. This option can be
used to optimize license use and to run a simulation at another time or in the background.
Running a batch simulation is different from running a script in the background. A batch simulation executes an
analysis set up in the CoventorWare interface from the command line, whereas background scripting runs a script
without using the CoventorWare scripting console. For details on how to run script without bringing up
CoventorWare, see page R9-5 of the Analyzer Reference.
Create the Batch Analysis

Prepare your simulation as usual by specifying the solver, input model, and result analysis. Continue with solver BC
setup; then click on Run. In the Save As window select Save for Batch Run or Script Export. CoventorWare will
automatically create a new batch analysis in the database that is just like other analyses except it will not start the sim-
ulation. The analysis will be available in the Console’s Models pane and can be copied, renamed, or deleted from the
Console.

Run a Simulation in Batch Mode

Before running a batch analysis, make sure CoventorWare is not running. The batch analysis calls the software
license; if the software is already open, the batch analysis will not be able to access the license needed to start the sim-
ulation.
To start a batch simulation, execute the batch analysis from a command window (on Windows and Linux). The batch
command is in the //Coventor/CoventorMP1/CoventorWare10.3/bin directory, so you must navigate to that directory
in the command window, or enter the entire path before entering the batch command. The batch command syntax is
listed below:
BatchExec --help This command lists all the commands available with the BatchExec command.
BatchExec --listProjects This command lists all the projects in the current work directory.
BatchExec -p project_name or BatchExec --project project_name This command desig-
nates the name of the project from which the batch job(s) will be executed.
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BatchExec -p project_name --listPending This command lists all pending batch jobs in the
project.
BatchExec -p project_name --runPending This command runs all pending batch jobs in the
project.
BatchExec -p project_name job1 job2 ...jobN This command executes several batch analyses
in the same project. If you have multiple pending analyses with the same name on different models, you may want
to specify the model label: BatchExec -p project_name Model_Name:Analysis_Name.
If your analysis name has spaces in it, wrap it in quotes: BatchExec -p project_name "analy-
sis_name"
Note that you cannot run analyses from different projects with a single command. You can write a .bat file on Win-
dows or a shell script (csh, bash, etc.) on Linux to execute analyses from different projects. This technique is outlined
in “Running Multiple Batch Analyses from Different Projects”.
Example
The Windows example below uses the tutorial project called CantileverBeam.
1. Go to Start > All Programs > Accessories > Command Prompt or go to Start, type cmd in the Search pro-
grams and files field, then double click on cmd in the Programs list. Either option will open a DOS command
window.
2. In the window cd to the Coventor\CoventorMP1.1/CoventorWare10.3/bin directory and type the Bat-
chExec command with the name of the project and analysis as arguments. For example,
BatchExec -p CantileverBeam modal
where BatchExec is the command;
-p CantileverBeam is the name of the project directory where the batch analysis resides;
modal is the name of the batch analysis.
When you start a batch job, the software opens the project database, retrieves the stored solver settings from the anal-
ysis, and starts the simulation. Batch execution progress is displayed in the command window. Solver output is
directed to a BatchExec.log file in the CoventorWare Logs directory.
If you did not exit CoventorWare before starting a batch job, you will not see any progress messages in the command
window. Instead, an exception like this will be generated in the BatchExec.log:
java.lang.Exeception: BatchModeClient:pid=2804:ODBCConnection.cc:153:Failed
to open data source
I\O error for file "D:\MTI_DE~1\BATCH_~1\BATCH_~1.CPD"
Error while trying to open file
The process cannot access the file because it is being used by another pro-
cess.

When the batch job is finished, you must start CoventorWare again to view the results: open the project, then double
click on the completed analysis in the Dependency Tree.
Running Multiple Batch Analyses from Different Projects

To run multiple batch analyses from different projects, you can create a .bat file or a shell script file that has a
sequence of BatchExec commands. For example, on Windows, use a text editor to create a .bat file in any directory
you wish with the desired commands:
call E:\Coventor\CoventorMP1.1\CoventorWare10.3\bin\BatchExec -p Cantile-
verBeam modal
call E:\Coventor\CoventorMP1.1\CoventorWare10.3\bin\BatchExec -p MirrorDe-
sign CoSolve
call E:\Coventor\CoventorMP1.1\CoventorWare10.3\\bin\BatchExec -p Gyroscope
Pullin
The call command is only needed in a .bat file (Windows); it is not needed in a Linux shell script. Execute the .bat
or shell script file from a command window.
1.6.5: Delete Logs

When you have accumulated more than ten log directories, a Delete Logs window will open. This window must be
closed before the Console can be accessed. It will ask you what you would like to do with previously generated log
directories. Over time, these directories can take up considerable space. Click on OK to delete all old logs except the
last five sessions. Click on Cancel to dismiss the window without deleting any log directions. Keep in mind that
every time you start the software, a new log directory is created. If you are working on an ongoing project, spanning
several log-ins, you may want to preserve these log directories for troubleshooting or if you need technical support.
1.7: Common Button Functions

The user interface displays numerous buttons that open dialogs. Common button functions are explained in detail in
this section.
 Browse icon
Depending on the type of input required, a setup dialog may have a Browse icon beside a field displaying a file,
model, or analysis name. A file name will also display the file path. If only a name is displayed, clicking on the
Browse icon, which is labeled with an image of a folder, to the right of that field will open the Console, which
displays the contents of the project database, including models, meshes, and analyses.
If a name and path is displayed in the field, clicking on the Browse icon will open the Open File dialog, which
allows you to change file paths and names. It can also be used to create a new file by editing the File field in the
Open window. Editing the File field is equivalent to performing a Save As function.
Note that the Open File dialog allows the user to navigate to and select a file outside the active project. With the
Console, a model or analysis result outside the active project must be imported.
 OK
The OK button saves all changes locally that were made within the window. All dialogs that display OK also
display a Cancel button to abort the change. OK returns control to the parent window/dialog.

 Cancel
The Cancel button also returns control to the parent window/dialog, but without saving any changes locally.
 Back
The Back button appears in boundary conditions menu windows. Clicking on this button returns control to the
Solver Settings window.
 Close
This button appears in results windows that yield display-only data. These fields are not editable. Clicking on
Close returns control to the results window. In the case of the results window, clicking on Close returns control
to the Console.
 Next
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The Next button appears in the solver Settings window. Clicking on this button saves the window settings and
opens the solver’s boundary conditions menu.
 Run
The Run button starts a calculation from one of the solver programs. The Job Queue pane opens automatically,
and progress can be monitored from its Progress pane. When the calculation is finished, the result solution win-
dow opens automatically.
Many of the software dialogs have a variable number of buttons. The variation is determined by what type of physics
the solver is configured to simulate. Examples in the MEMS Design and Analysis Tutorials illustrate these differences
for several dialogs.
1.8: File Types and Organization

CoventorWare accepts, uses, and creates a variety of files and file formats. A basic understanding of file conversion
and organization makes it easier to track software progress, organize your files to suit your environment, and trouble-
shoot any problems that may occur while developing your projects.
The software deals with five different categories of files: system resource, input/import, output/export, execution, and
tutorial. Details on each of these categories follow.
1.8.1: System Resource Files

These files are installed when you initially configure your software or are created or modified by you. They are used
as common input files for a variety of projects. These files are typically stored in directories under the design direc-
tory you created. When you create a new project, the software automatically creates a Devices directory for process
and layout files. The first time you run CoventorWare, the software creates the Shared directory and copies the
default .mpd file to this directory. This project structure is shown below:

Figure U1-7 Project Structure
Database Files
The database file stores the 3-D models and the meshed model information, as well as analysis results. Because the 3-
D models and meshes are stored as database entries instead of discrete files, a mesh can be refined without having to
create a new file, and patches can be assigned to a 3-D model so that it can be meshed and remeshed without having
to reassign these patch names. A database file is created for each project, and is given the same name as the project.
The name is also appended with the type of operating system you have. For example, if the project name is BeamDe-
sign, and you have a Linux operating system, the database file for that project would be called BeamDesign_linux
with a .CPDB extension. A .GBAK file is also created; this file is a cross-platform backup version of the .CPDB file.
As noted above, the simulation results are also stored in the project database. Each solver creates one or more results
when the solution is complete. Each time a simulation is launched, the results are stored in a user-designated Analysis
entry in the project database. Some solvers generate a single result that would be stored as a subentity in the desig-
nated Analysis. Other solvers or solver functionality may generate several sets of result data that are stored in result
groups in the designated Analysis. For example, the MemMech/Modal ANALYZER solver and the Parametric Study
function create a result group for each step and/or mode created in the solution. A Parametric Study transient analysis
creates several result groups that in turn have their own results entries.
Managing Database Files

As you add models and run analyses, the project database can grow quite large (multiple GBs). There are two types of
fragmentation that, in conjunction with a large project database, can cause CoventorWare to become sluggish. The
first type is disk fragmentation, which occurs only on systems running Windows, and can occur even if there is plenty
of free space on the disk. The second type is database fragmentation is the result of adding and deleting models and
analyses; this type can occur under both Windows and Linux. Symptoms that may indicate that one or both types of
fragmentation are slowing CoventorWare include
 CoventorWare takes an unusually long time to open a project, and the Console appears locked up.
 The Preprocessor operates slowly when loading models from a project database that contains many models.
 Analyses run more slowly than expected.
The procedure below will reduce both types of fragmentation and should result in noticeably improved responsive-
ness. If, after following this procedure, CoventorWare continues to respond slowly, please contact your Coventor
support representative.

To defragment project database files:

1. Check that the hard drive containing your CoventorWare Design_Files directory has adequate free space. At
least 15% of the total disk size is necessary to complete the rest of this procedure on Windows systems, but
more is better. If you are running out of disk space, resolve this issue before proceeding.
2. Reboot the system, start CoventorWare, open the target project, and then exit, accepting the option to backup
the project data. This will create a backup of the project data in a .GBAK file. (You can check the time stamp
on the .GBAK file to be certain it is up to date.)
3. Copy the .GBAK file to another hard drive to ensure that a backup of the project data exists should anything
go wrong in the subsequent steps.
4. Delete only the .CPDB file in the project folder. Do NOT delete the .GBAK file. (No data will be lost by
doing this because CoventorWare can fully reconstruct the .CPDB file from the .GBAK file.) Linux users can
continue to Step 6.
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5. If the system is running Windows, use the built-in defragmentation tool (Start > All Programs > Accesso-
ries> System Tools > Disk Defragmenter) to analyze the hard drive. This will give a complete list of all files
and the number of fragments. If the tool recommends defragmenting the hard drive, then defragment and re-
analyze the hard drive. This will likely be the most time-consuming step in this procedure.
6. Start CoventorWare and open the target project. Because the .CPDB file is missing from the project folder,
but the .GBAK file is present, CoventorWare automatically recreates the .CPDB file from the .GBAK file.
If the disk has sufficient contiguous free space for the .CPDB file, and the .CPDB file has been re-created from a
.GBAK, the project database should be completely defragmented.
When you delete analysis results and meshes from the database, the corresponding space in the .CPDB is not
actually recovered, i.e., the size of the .CPDB file never shrinks. However, deleted data is omitted when a .CPDB is
recovered from a .GBAK. Therefore, a .CPDB file that has been recovered from a .GBAK file may be significantly
smaller than the original .CPDB file.
Backing Up a Database Outside the Console

If a .cpdb file is unusually large, backing it up from the Console make take a considerable amount of time, during
which the Console cannot be freed up to perform any other task. In this case, it may be more effective to back up a
project database from outside the Console. CoventorWare includes a DBSlutil.exe that can be used to back up project
databases outside of the CoventorWare user interface. To back up a database:
1. From a cmd window, cd to \\CoventorMP1.1/\CoventorWare10.3\bin
2. Enter call cov_env.bat
3. cd to \\CoventorMP1.1/\CoventorWare10.3\bin\NT40_x64 or /linux_x64
4. Enter DBSIutil.exe --backup filepath of file to backup filepath of file to
write. For example:
DBSIutil.exe --backup T:\DesignFiles\CW\AnchorLoss\ANCHORLOSS_X86.CPDB T:\Design-
Files\CW\AnchorLoss\ANCHORLOSS.GBAK
To back up a series of databases, users can write and execute a .bat file on Windows or a shell script (csh, bash, etc.)
on Linux that has all the necessary commands and a series of calls to the DBSIutil.exe. For example, the .bat file
could contain:
cd C:\Coventor\CoventorMP1.1\CoventorWare10.3\bin
call cov_env.bat
cd C:\Coventor\CoventorMP1.1\CoventorWare10.3\\bin\NT40_x64
DBSIutil.exe --backup T:\DesignFiles\CW\AnchorLoss\ANCHORLOSS_X86.CPDB T:\Design-
Files\CW\AnchorLoss\ANCHORLOSS.GBAK
DBSIutil.exe --backup T:\DesignFiles\CW\BeamDesign\BEAMDESIGN_X86.CPDB T:\Design-
Files\CW\BeamDesign\BEAMDESIGN.GBAK

MPD Files
The mpd directory stores the materials database files (.mpd). This database file stores all material properties used by
the solvers during the computation phase. Material constants, thermal properties, and other attributes for each mate-
rial used in a MEMS design are stored in this file. An initial database is provided during installation and stored in the
Shared directory. From the User Settings dialog that opens the first time you run the software, you point to the Shared
directory that contains the this .mpd file. You may change or add any properties at any time, but it is a good practice
to save these changes to a different MPD file so that the original file is be preserved. The Materials Editor, accessed
from the Solid Model Builder dialog, allows you to add or delete materials and to change the material properties of
existing materials.
Process Files
The process file stores the process steps used to fabricate the MEMS device. The software uses this process informa-
tion to model the deposit and etch steps used and to model deposit profiles, material thicknesses, etch slopes, and
other parameters accurately. The process file can be user-created or can be specific for the foundry that will fabricate
the device. Process files are distinguished by a .proc extension. The software stores the process file in the Devices
directory of the current project. Process files are accessed from Process Editor icon in the Solid Model Builder dialog.
Layout Files
The layout files represent the source two-dimensional layout database used by the software for 3-D modeling. The
Devices directory stores a variety of layout-related files. The layout files may be created using the 2-D layout editor
included with the software or provided by you from another program. CoventorWare 2-D layout files have a .cat
extension. If you choose to use your own software, the layout files must be in CIF, DXF, or GDSII format. Coventor-
Ware can convert these files to the native .cat format. The import files are also stored in the Devices directory.
1.8.2: Input Files

These files are created during the execution of the program and are specific to a particular project. Some files can be
translated from other software. These input files are necessary to create the data required by the solvers to compute
solutions for your MEMS models.
Database Files
During software execution, a database file (.cpdb) is created that contains model information. This model information
is then used by the solvers. Simulation results are also written to the database file and are grouped with the model
used for that simulation. Other files can be created from this database for export to a third-party software, and files
can be imported into the project database file.
Model Import
A 3-D solid model or mesh can be imported from several different third-party tools. The imported solid model can be
in .sat (up to and including version R22), .step, or Pro\E (.prt, or .asm) formats, or 3-D IGES file (with .igs or .iges
extension) up to IGES version 5.3, or as a mesh in .stl, .pat, .unv, .cdb, or .rst format. Note that the last three file
extensions are used for ANSYS files. See page U5-15 for more details.
To import a model, click on the Import icon at the top of the Console. In the dialog that opens, select the correct file
extension, browse to the file you want to import, and click on Open. The software will then translate the model for-
mat into the database file.
If you create your mesh in a third-party tool, and then import it into CoventorWare, you will need to provide material
information from within the Preprocessor. Use the Layer Properties dialog or Part Properties dialog to assign materi-
als to layer or part entities.

1.8.3: Export Files

CoventorWare can export 2-D, 3-D, and result files. The Layout Editor can export 2-D layouts in GDS, CIF, IGES,
SAT, and DXF formats. See page L1-13 for more information.
The Console can export 3-D models in ACIS, SAT, IGES, and STEP formats. Meshes can be exported in STL, UNV,
and ANSYS formats. Solid models and meshed models can also be exported as .gbak files to be shared with other
CoventorWare users. See page U1-23 for more information.
Result data can be exported to a .gbak file or can be exported as text files from the Results window and from within
the Visualizer.
1.8.4: Execution Files
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These files are created by the software during the execution of the program. They contain data used by the software
while it is running, including log information that may be helpful to Coventor support staff in debugging simulation
problems. Some of these files are deleted when execution is complete, while others are retained. In general, any of
these execution files may be deleted when processing is finished.
Temporary Files
The software creates an assortment of temporary files. All are stored in a Temp directory that you designated the first
time the software was run. This location will not have to be set again. If there is a need to change the Temp file path,
click on the User Settings icon in the Console to access the User Settings dialog. Each time you run the software, pre-
vious temp files from the solver you are running are overwritten. Note that if you are running multiple sessions that
use the same solver during the session, each session must have a separate Temp directory path. Depending on the type
of simulation you are running, the temporary files may require a significant amount of disk allocation for the solver
computations.
MemMech Temp Files

Unlike other solver temp files, MemMech temporary files are not preserved in the Temp directory unless the Retain
intermediate analysis files? setting is set to Yes in the MemMech Advanced Settings dialog (see page R4-127 for
more details) If this setting is not set to Yes, the .dat, .inp, .fil, .msg, and .cdb files are not written to the directory to
be preserved until the solver is run again. This was done because MemMech temp files are large. Each user must
evaluate the tradeoff between not using this setting and saving space or using this setting to preserve files that may
be needed for debugging. Any solver that runs MemMech will be affected, including CoSolveEM and the
Parametric Study function.
Log Files
CoventorWare creates several types of log files. These files are automatically stored in a dated directory in the Logs
directory. When you start a new software session, a dialog window periodically prompts you to delete all but the most
five recent log directories. The log files can usually be deleted unless a problem develops that requires the assistance
of the Coventor support staff. The log files include software commands that have been executed, detailed information
about simulation progress, etc. This information can be helpful in determining the source of a problem that may occur
during a software session.
1.8.5: Tutorial Files

CoventorWare also provides additional files to demonstrate software capabilities and to help you learn to use the soft-
ware.The tutorial files supplement the MEMS Design and Analysis Tutorials. Files have been provided to help you
complete the exercises without creating all of these files yourself. To access these tutorial files, click on the Open
Projects icon in the Console, and in the window that opens click on the Import Tutorial icon (middle icon), and a list
of available tutorials appears. When you choose a tutorial, the corresponding tutorial directory is automatically cop-
ied from the installation location into your work directory, with the tutorial name as a project name. The tutorial will

have the correct file structure, and you can proceed according to the tutorial instructions. Additional information can
be found in the MEMS Design and Analysis Tutorials Introduction, beginning on page T1-1.
The devices depicted in the tutorials and the files associated with them are intended for educational purposes only.
1.8.6: Naming Restrictions

File names created by users cannot include any of the following strings in the specified order. The underscore is
intentional; the N represents any number.
_mode_00N esp_
_frequency_00N msp_
_time_00N sens_N
cs_ sm_N_
Also note the following:
 A user-named file cannot start with a numeric character.
 A database entity name cannot include a / or \ character.
 Cat files cannot have a colon ( : ) in the file name.
 Projects, directories, and file names cannot use spaces.
1.8.7: Directory Structure

CoventorWare automatically creates most of the needed directory structure. You need only to name the project; the
software creates and stores the files in the correct directories. For files not contained in the project database (if the file
path is shown in the file field), you can override the default directories and designate alternate paths by clicking on
the Browse icon beside the file field. Figure U1-8 shows a typical user directory diagram:

Figure U1-8 Typical Directory Structure
M
The top directory is your work directory, which has a default name of Design_Files (you can rename this directory).
The common files that can be used by all projects reside in the Shared directory directly under the work directory. A
default MPD file, foundry MPD files, layout generators, foundry and user layout templates, and process files are
grouped in this directory. The Layout_Generators directory contains generic generators, generators that are part of a
purchased foundry kit, and any generators that you create. The Layout_Templates directory contains .cat template
files (foundry templates as well as any user templates).
Input and output files specific to a project are grouped within a project directory. They are further separated by layout
and process files in the Devices directory. Intermediate files are stored in the Devices\Extra directory. Solid models,
mesh models, and analysis results are stored in the project’s database file (.cpdb).
The execution files are split into a Temp directory for temporary files and a Logs directory for log files. Each of these
directories can have subdirectories if you plan to run multiple sessions.
The Temp and Shared directories are created in the default locations shown in Figure U1-8, but they can be located
on a larger hard disk to allow for more space for project directories.
Tutorial directories are created as needed. When you import a tutorial project (using the Import Tutorial icon
accessed from the Console’s Open Projects icon), the corresponding tutorial directory is copied automatically from
the software installation location into your work directory with the tutorial name as the project name. The tutorial
directory will already have the correct file structure.
This organization makes it easy to find all the files needed to run the software. The individual project directories can
be archived or deleted when no longer needed. This simplicity of organization makes this the recommended structure
for users. Throughout this manual, all examples refer to this type of directory structure.

1.8.8: Setting Up a Typical Project

When you start CoventorWare and create a new project, the Devices directory is created automatically. The software
looks for the mpd file and the Temp directory you specified the first time you ran the software. The software will also
create a database file with a default name based on the project directory name.
After you create a project, open the Solid Model Builder dialog. Access the Process Editor to create a process file or
from the Solid Model Builder dialog select a process already in your project. The software will default to the pro-
ject_name\Devices directory for the .proc file location. The mpd directory file path will default to the Shared\mpd
directory assigned the first time the software was run.
Next, use the Layout Editor to create a new layout, or from the Solid Model Builder dialog, select a layout already in
your project. The software will default to the project_name\Devices directory.
To create a solid model, make sure the desired mpd, process, and layout files are selected in the Solid Model Builder
dialog, then click on Build. When you click on Build, the software uses the proc and cat files to create a solid model.
The model can then be meshed from within the Preprocessor. The models and meshes associated with a project are
stored in a .cpdb file. The file paths to the process and layout used to create the model are stored with the model itself.
To run a simulation on a mesh, right click on it in the Dependency Tree, and select New Analysis. When you run a
simulation on a mesh, the solver setup and results are also stored with the mesh as an analysis, which is nested in the
dependency tree underneath the mesh. To view analysis results from a previous run, double click on the analysis in
the Dependency Tree, or right click on the analysis and select Open Results. To load the simulation setup for a previ-
ous analysis, right click on the analysis name in the Dependency Tree, and select Open Solver Settings.

1.9: Design Considerations

The guidelines and considerations in this section will help ensure that your designs progress smoothly and with little
difficulty.
1.9.1: Fabrication Description

Process modeling in CoventorWare presents a simplified deposit and etch model that is adequate for 3-D design and
meshing, without becoming overly complex. Any mask or process step that does not result in a modeled object or in a
surface that influences an electrostatic or mechanical solution does not need to be characterized. You can build a pro-
cess file in the Process Editor or obtain one as part of a foundry design kit that includes files compatible with selected
fabrication facilities.
If you create your own process, you will need to choose mask names and mask photoresists (also known as mask
M
polarity). These are important considerations because the correct mask names must be assigned to each layer during
the 3-D modeling phase of the design.
1.9.2: Layout
A layout tool is provided to help you in the definition of a two-dimensional layout for your design. You may choose
to design your entire MEMS project using CoventorWare’s 2-D Layout Editor, choose to use it only for viewing, or
decide to bypass it completely. Layout Editor functionality is documented in Layout Editor Reference.
CoventorWare imports CIF, DXF, or GDSII format files; the software can take the layout information and translate it
into the native layout format.
Mask names and tones that you select during the process modeling phase need to be defined in the layout phase. The
solid model tool combines the 2-D layout data with the process information to create a 3-D model.
You also can bypass the layout editor step and design 2-D and 3-D geometries directly in Coventor’s MEMS+ soft-
ware or in a third-party modeling and meshing tool such as I-deas. These designs are imported into CoventorWare
using the Import icon in the Console. If you create your model in one of these programs, you will need to declare the
material properties using the Preprocessor’s Properties window.
The MEMS design input and modeling is called front-end design. Figure U1-9 illustrates possible front-end design
flows.

Figure U1-9 Creating a MEMS Model
Build process file

(native .proc format)
2-D layout created 2-D layout created

in Layout Editor in third-party program
Edit model or convert Export file in DXF

to native cat format CIF or GDSII format
3-D model extracted

from MEMS+
Export layers in IGES,
Build 3-D model STEP or SAT format
to third-party programs
Third-party meshing
Mesh 3-D model
Import third-party
meshed model
Select solvers
1.9.3: Meshing
The software is capable of handling a wide variety of designs. It has some finite capability limits, but the resource
limits of the platform on which it is run often dominate a decision on how complex of a mesh to create.
Design complexity increases solver computation times. Computation time is influenced by the structure of the design
and the number of compute nodes created during the meshing process. Consider the tradeoff between solution accu-
racy and computation time when deciding on the type of mesh structure and meshing components to use. The target
solver can also be configured to accommodate large designs with adjustment of tool control parameters and alternate
solution methods. Some adjustments may reduce accuracy, but will allow the software to run complex problems.
1.9.4: Computation Time Requirements

Many of the solvers can require significant computer resources, depending on the mesh and type of solution being
performed. Coupled solvers like CoSolveEM iterate through two or more solvers a number of times, and a parametric
study may also iterate several runs to produce the desired results. For all but the simplest models, expect a significant
pause in operation once a solver is started, and expect to run the software on the fastest machine you have available.
For computationally intensive runs, consider reducing the number of simulation steps when investigating parameter
shifts and trends.

1.9.5: Accuracy
The software can produce highly accurate results. However, accuracy can be limited by the techniques used in creat-
ing the meshes, by the configuration of the solver tool parameters (default settings are usually the most accurate), and
in simulating the actual electrical and mechanical boundary conditions that are applied in a real design.
1.10: Enhancing Productivity

The following is a list of procedures, hints, cautions, and recommendations to help you obtain better results or to use
CoventorWare more efficiently.
1.10.1: How to Run an Analysis
M
CoventorWare has several options for running an analysis, including adding an analysis to the Job Queue, running in
batch mode, or running a script. This section outlines when a particular method will be the most efficient.
Job Queue
The Job Queue allows the user to request the sequential processing of analyses that have been set up in advance. This
approach is appropriate for
 single analyses that require long computation times
 multiple independent analyses on one or more mesh models
Batch Mode
This functionality allows you to run a simulation in the background (without the GUI displayed) or at a later time.
Batch mode is selected from the Save Analysis window that opens when you click on Run in a solver’s BCs window.
When the Batch option is selected, the software creates an executable analysis in the working directory that can then
be executed from a command line. A batch analysis is started outside of CoventorWare from a command window.
This approach is appropriate for
 optimizing license use (run a simulation at another time when it is not being accessed by other users)
 running analyses from different projects with a single command (you can write a .bat file or shell script to
execute analyses from different projects)
Scripting
The Scripting Console allows the user to run analyses without traversing the UI because the analysis setup is speci-
fied by the script. The most powerful use of scripting is in running multiple analyses. There is some overlap with
Parametric Study, but scripting should be used instead of Parametric Study when possible. Analyses created using the
Parametric Study interface cannot be scripted. This approach is appropriate for
 multiple analyses that are dependent
 multiple analyses that explore the effects of changing boundary conditions (this can also be done with Para-
metric Study)
 analyses that benefit from mathematical post-processing of tabulated results

Parametric Study
Parametric Study is a framework available for most solvers. Parametric Study analyses can be placed in the Job
Queue or run in Batch Mode. This approach is appropriate for
 multiple analyses that explore the effects of mesh-model transformations
 multiple analyses that explore the effects of changing material properties
 multiple analyses that explore the effects of changing boundary conditions (this can also be done with Script-
ing)
1.10.2: Monitoring Execution

The software screens display quickly. Only the execution of the solvers produces a noticeable delay when setting up
or running the software. Solver run time is dependent on the platform, network and hardware configuration, and CPU
availability. All activity during solver execution is displayed in the Log View tab of the Console. While some of the
displayed messages may be cryptic to the casual user, key display information can provide information on solver
progress.
The MemElectro and MemMech runs are clearly differentiated by displays of capacitance node calculations or
mechanical solver runs. The MemElectro solver produces more messages and provides calculation feedback based on
the number of nodes in the design. The mechanical solver run shows a pre-calculation phase and a main calculation
phase message. The log window may remain inactive for quite some time while the main computations take place.
CoSolveEM runs call both the MemElectro and MemMech solvers. After each cycle is complete, the log window dis-
plays the current CoSolveEM iteration. CoSolveEM runs typically require 2-6 iterations to complete, although the
number is design dependent. The CoSolveEM iteration limit (set at 12 by default) can be changed in the CoSolveEM
Advanced Settings dialog. CoSolveEM progress can also be monitored from the Job Queue (see page U1-14), which
has a Progress tab that displays simulation progress.
Other solvers display a variety of parameters while executing. The number of lines that appear in the log window and
the amount of diagnostic information programmed for viewing during the execution cycle is highly dependent on the
solver. Coupled solvers display a sequence of compute phases.
The status of a parametric study can be monitored in the Job Queue (see page U1-14).
Other indications of compute progress can be determined by viewing the Temp directory where temporary files are
stored. While the files themselves may be in binary format or not easily interpreted, the number, size, and time stamp
indicates progress and level of compute intensity.
Before starting a run, there is no easy to way to predict the time interval required for an entire simulation or incremen-
tal solver iteration. Within a complete solver execution, the time to finish successive iterations for CoSolveEM or the
time to complete successive trajectory steps for a parametric study may vary significantly, depending on the structure
and its current electrostatic or mechanical state.
Components of the software generate log files during execution, and the contents of these log files are displayed in
the Log View tab of the Console. Some of the log files contain detailed information that can be useful in analyzing
execution progress and problems. Because these file details are beyond the scope of this documentation, consult the
solver-specific reference for additional information.
The Log View window used to display software progress is intended for information display. Do not attempt to
enter text in this window.

Testing the Setup

Depending on the structure, CoSolveEM and parametric studies can be computationally expensive. Because it is pos-
sible that some setup conditions may be incorrect or may produce unanticipated results, computation time can be con-
served by running smaller scale simulations first. The following are some recommendations for testing a setup:
 Check Material Properties Database: When creating a new project, be sure to access the Material Proper-
ties Database from the Solid Model Builder dialog to verify the values set for the materials used in the design.
If you need to change material properties for a particular design without changing the default MPD file, or if
you want to change the material properties of a model that has already been built, access the Material Proper-
ties Database from within Preprocessor (right click on a layer or part entity, and select Properties). Any
changes made from this window will only be applied to the active model; see page U5-32 for more details.
 Check solver settings dialogs: Before running CoSolveEM, be sure to check the individual solver settings
for MemElectro and/or MemMech. The software relies on the solver mode and control parameter choices
M
from these solvers to complete the CoSolveEM calculations. The MemElectro and MemMech solver settings
are accessible from tabs in the CoSolveEM Settings dialog. MemElectro and MemMech boundary condition
dialogs that are relevant to a CoSolveEM simulation are also accessible from the CoSolveEM BCs window.
 Check boundary condition dialogs: Note that CoventorWare ignores any line that contains the word "none"
in the first column. Other settings on that line are not used.
 Execute individual runs: Before running the CoSolveEM solver, execute individual MemElectro and Mem-
Mech runs. An approximate coupled solution can be obtained by running MemMech with the Electrostatic-
BCs (see page R4-105).
 Use OneStep setting: When running CoSolveEM, set the CoSolveEM Settings window Iteration Method
field to SingleStep. This forces the solver to complete a single iteration using the MemElectro and MemMech
solvers. While the results may not be as accurate, it can verify user setup and may point out unanticipated
results.
 Use simpler mesh structure: Consider running an alternate design with a much simpler mesh structure to
test the setup and execution. The results may not be as accurate, but this provides a convenient way to test a
variety of setup situations in less time.
Reducing Total Computation Time

The solvers are complex and require may significant time to execute. This time can be reduced if the problem pre-
sented to the solver can be made simpler. Here are some ideas to reduce scale and complexity:
 Use alternate meshing approach: Sometimes an alternate meshing approach can result in fewer computa-
tion nodes. Look carefully at the structure and the problem to be solved when deciding on the appropriate
mesh design. Reductions in the number of mesh elements or changing the element type can have a significant
impact on computation time without sacrificing accuracy.
 Use symmetry: Some solvers support symmetry, so if your model is symmetrical, then you can partition it,
and mesh and simulate only a portion of it.
 Scale down parametric studies: Execute scaled-down parametric studies with widely spaced trajectory
points to analyze trends and to determine the total range of a solution set. A detailed analysis with many more
points then can be run as an overnight job.
 Use mesh transform tool: You can save some time in running a parametric study by using the mesh trans-
form feature available from within the Preprocessor. This feature allows you to prescale or modify a design
parameter before applying a trajectory. With a mesh transform, you can sometimes avoid performing two
parametric studies to complete your analysis.

Allowing Sufficient Disk Space

The tutorial examples in the CoventorWare documentation set are scaled-down versions of real designs, and even for
these designs the CoventorWare solvers can produce numerous result and temporary files. For very complex jobs, be
sure to allow enough temp space, and to place your Temp directory on a fast local disk. Large executions can con-
sume hundreds of megabytes of storage space, and the frequent disk access can affect performance if slower storage
paths are designated. If available space is exhausted during a simulation, the system may appear to crash. Delete or
archive files from previous runs to increase available space.
1.10.3: Efficient Design Iterations

CoventorWare minimizes the number of iterations required to produce a solution. Designs generally proceed in a
linear flow and are adjusted to refine design parameters or solution accuracy. Once a successful solution has been
produced, further iterations can be managed through the Parametric Study function without needing to proceed
through the complete design flow. Figure U1-10 shows a simplified graphical view of MEMS design using the
DESIGNER/ANALYZER software.
Figure U1-10 Typical Design Flow
Build or modify model Process modeling

for functionality or
performance
2-D design creation
3-D solid modeling
Remesh for better Finite element mesh

accuracy
Modify BCs to change Apply boundary conditions

results
Use Parametric study

Compute solution
function from within
each solver to create
result set
View table or graphic results

Iterated Simulations from within the Solver Modules

Some solvers have iteration capability independent of the Parametric Study function. Three special cases are high-
lighted here.
The MemMech solver allows a modal analysis or harmonic analysis solution to be performed at the same time as a
mechanical solution. Users select the number of modes to be computed or a range of harmonic excitation frequencies,
and a result group is created for each mode. The modal and harmonic results are tabulated and viewed in table and
graph format, and the completed modal solution can be viewed in the Visualizer.
The CoSolveEM solver allows trajectories to be set for voltage ramps. This capability enables pull-in or hysteresis
analysis to be performed.
1.10.4: Executing a Mesh from Command Line
M
Executing a mesh without having to open the Preprocessor can expedite the tasks associated with modeling. The user
can generate a mesh outside the Preprocessor and save it to the database using command line functionality. To use
this functionality, from the Preprocessor the model must have been moved to the Mesh Model folder and the mesher
settings have already been set. You will also need the database reference number for the model. Two different meth-
ods for obtaining the database reference number and meshing from the command line are outlined below.
Before manipulating entities in your database, Coventor recommends backing it up in case of data loss due to file
corruption.
1. Open the model in the CoventorWare Preprocessor.

2. Retrieve the database reference information in the log: search for the string Glish: GUI sent Event=
Preprocessor Containing:
The string we are interested in is shown below:
dbReference=DB://{connection{host{127.0.0.1},port{1051},driver{""}, us-
er{SYSDBA},password{masterkey},databaseFile{C:\\COVENTOR\\DESIGN~2\\CANT
IL~1\\CANTIL~1.CPD}},entity{id{59698},label{cantilever_prebuilt},
type{model}}}
Note that the filepath shown above is typical of the Windows OS; Linux users should use a Linux filepath.
3. Shut down CoventorWare.
4. Make sure that the glish.exe and fbserver.exe are no longer running. Windows users should use the Task
Manager to verify that these processes are not running. Linux users should use the ps -ef| grep glish
and ps -ef| grep fbserver commands.
5. Open a command prompt and cd directory to \\Coventor\CoventorMP1.1\CoventorWare10.3\bin\NT40_x64
on Windows or \\Coventor\CoventorMP1.1\CoventorWare10.3\bin\linux_x64 on Linux.
6. Set the environment variables shown below:
MTI_ROOT= \\Coventor\CoventorMP1.1\CoventorWare10.3
MEMCAD_ROOT= \\Coventor\CoventorMP1.1\CoventorWare10.3
MCOSMLD_LICENSE_FILE=54000@<license_server_host_name>
For information on how to set environment variables on your respective OS, see page U1-43.
7. Run autoMesher.exe with the following options (substitute the value of <dbReference> and make sure to
enclose the <dbReference> in double quotes):
automesher –databaseInput “<dbReference>” –modelOutput “<dbReference>” –
meshOutput “<dbReference>” –meshFlag 1

Note: The dbReference string will contain '' within it (for example, driver{""}). These double quotes need to
be escaped as ‘ \” ’ before execution.
To construct the dbReference string without launching Preprocessor:
1. Set global environment variable FL_LOG=DBSI:debug (see Step 6 above).
2. Relaunch CoventorWare.
3. In the dbReference string shown below, for a given project, the port number is tied to the particular instance
of CoventorWare, and the entity id is tied to a particular model. The remaining arguments are consistent and
known.
dbReference=DB://{connection{host{127.0.0.1},port{1051},driver{\"\"},us-
er{SYSDBA},password{masterkey}, databaseFile{C:\\COVENTOR\\DE-
SIGN~2\\CANTIL~1\\CANTIL~1.CPD}},entity{id{59698},label{cantilever_prebu
ilt},type{model}}}
Note that the filepath shown above is typical of the Windows OS; Linux users should use a Linux filepath.
4. To find the port number, search for “Database server port” in the log. This will only change when Coventor-
Ware is relaunched.
5. To identify the entity id, from the CoventorWare Console’s Models list, copy the unmeshed model and paste
it in the same project. The entity id for the copied/pasted model will print out as a dbsi debug log at the end of
the log.
6. Create the dbReference string: use the entity id you identified in Step 5, and modify the label argument as
well to match the name of the copy/pasted model.
7. Run the automesher command as shown above to mesh the copy/pasted model.

1.11: Environment Variables

There are several environment variables that a user can set to extend the functionality of CoventorWare. The func-
tionality that these environment variables activate are not needed by the average user. The variables that affect the
overall function of CoventorWare or multiple modules are listed below. Variables that affect a specific module are
listed in that module’s reference section.
Variable Name Possible Values What it does
COV_MPD_DIR absolute file path to Sets the default MPD directory location instead of //user_
directory workspace/Shared/MPD. If the COV_MPD_FILE variable is
not set (see below), CoventorWare will look for an mpd1.mpd
file in this directory.
M
COV_MPD_FILE file name (if file name Sets the specified file as the default MPD instead of the //user
has spaces, the name _workspace/Shared/MPD/mpd1.mpd file. If the
must be in quotes) COV_MPD_DIR variable is not set (see above),
CoventorWare will look for the named file in the //user
_workspace/Shared/MPD directory.
COV_RC_DIR absolute file path to Sets the location of the coventorware10rc file. On Windows 7
directory the default file location is C:\Users\%user%\AppData
\Roaming\Coventor. On Linux, the default location is the
user’s home directory.
MTI_DEBUG on Displays debugging information for CoventorWare in the log

file
MEMCAD_DEBUG_LEVEL 1,2,3 Sets the level of debugging information of the ANALYZER

solvers. A value of 3 generates the most debugging
information. Note that for MemMech, this functionality has
been replaced by the Retain intermediate analysis files?,
which is set from the MemMech Advanced Settings dialog;
see page R4-127 for more details.
MTI_CWRCFILE user-named The specified value will create another file that will serve as
configuration file an alternative to the coventorware10rc file. On Windows 7
this file is located in C:\Users\%user%\AppData
\Roaming\Coventor. On Linux, it is located in the user’s
home directory. This variable is useful if you have multiple
workspaces and you want to run multiple instances of
CoventorWare. It creates a configuration file in the above
named directory that sets the work, scratch and shared
directories to another location so that the multiple instances of
CoventorWare will not conflict.
MTI_SKIP_PROJECT_CHECK any If set, CoventorWare will start faster because it skips checks
that determine if a project in the user’s workspace is a valid
project, and thus filters what appears in the Open Project
dialog. This variable is only useful if a user has a large
number of projects.
Setting Environment Variables on Windows

To set an environment variable on a Windows operating system:
1. From the Start menu, select Control Panel.
2. In the window that opens, select System and Security.

3. In the window that appears, select System from the list in the right panel.
4. In the left panel of the window that appears, select Advanced system settings.
5. In the System Properties dialog that appears, click on the Advanced tab, and then on Environment Vari-
ables.
6. In the Environment Variables dialog, under the User variable pane, click on New.
7. In the dialog box that opens, enter the variable name and value, then click on OK. The newly defined variable
appears in the User Variables window.
8. Click on OK to close the Environment Variables window.
Changes to the user variables only affect the user who is logged on the machine. System variables affect all users
and can only be changed by a system administrator.
Setting Environment Variables on Linux

To set an environment variable on Linux, use the following syntax:
In a sh or bash shell, use
variable_name=value
export variable_name
In csh or tcsh shell, use
setenv variable_name value
For example, to set the MTI_DEBUG variable in a bash shell, define it using the following syntax and substituting
the correct directory path:
MTI_DEBUG=on
export MTI_DEBUG
To list the environment variables that have been set, enter env at the prompt.

Section 2: Creating a 3-D Model Version 10.3
Section 2: Creating a 3-D Model
This section details how to access CoventorWare’s 3-D modeling capabilities, which includes the Materials Editor,
the Layout Editor, the Preprocessor, and the Solid Model Builder, and explains how these capabilities come together
to create the 3-D model.
2.1: Solid Model Builder

The Solid Model Builder gives the user access to the Materials Editor, the Process Editor, and the Layout Editor. It is
also from this dialog that the user builds the solid model and opens the Preprocessor. To access the Solid Model
M
Builder, click on its icon in the Console:
Figure U2-1 Solid Model Builder
Access to the
Materials Editor
Access to the
Process Editor
Access to the
Layout Editor
With a material database, process, and layout file selected, the user then enters a model name in the Model field and
clicks on Build to start the build process. The solid modeler uses the information in the specified material, process,
and layout files to construct the 3-D model, and when the model is complete, the Preprocessor opens automatically to
display the result, as shown below.

Builds model and

opens Preprocessor
Model names cannot include the / or \ character.
2.1.1: Materials
The Materials field specifies a database file that stores all the material properties used by the solvers during the com-
putation phase. This database file has a .mpd extension. A generic MPD file (mpd1.mpd) is included with the installa-
tion and is placed in each user’s Shared\mpd directory; if no other file is specified, this generic database is used by
default when any new model is created. A material database file may be included with a tutorial project, and a
foundry-specific material database may be provided by foundries as part of their design kits.
To specify another directory as the default location of your mpd files, use the COV_MPD_DIR environment
variable.
To specify another file other than the mpd1.mpd file as the default material database, use the COV_MPD_FILE
environment variable.
See page U1-43 for more details.

The material database stores characteristics of the materials used in the fabrication process. The properties associated
with the materials include strength, density, conductivity, and thermal characteristics. A material has to be selected
for each of the deposit steps in the process, and only those materials that are included in the material database speci-
fied from the Solid Model Builder dialog can be selected. Device behavior is determined in part by the physical and
chemical properties of the materials that make up the model, so adding, modifying, or verifying material properties is
the first step in device design.
The Materials Editor icon to the right of the Materials field opens the Edit Materials window, as seen in Figure U2-2.
The Materials Editor allows you to add, delete, and modify material properties listed in material database file speci-
fied in the Solid Model Builder dialog. If you want to change any values in the default material database file, consider
copying it and saving it under another name, then saving the changes to the new file, rather than overwriting the val-
ues in the original .mpd.
Figure U2-2 Materials Editor
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Material properties with more than one value are accessed from an Edit window.
The Materials Editor can also be accessed from within the Preprocessor when a part is selected. The Edit >
Properties menu opens the Properties dialog box, which has an icon link to the Materials Editor. When a material
properties database is accessed from the Console’s Solid Model Builder dialog, changes are written to the MPD
file. If access is through the Preprocessor, changes will only apply to the model displayed.
To create a new MPD file, in the Solid Model Builder dialog, click on the arrow beside the Materials Editor icon, and
select New. You will be prompted to enter a name for the new database, and then the Materials Editor will open with
the default AIR material displayed.
For more detailed information on the Materials Editor and the material properties associated with it, see the section
beginning on page U3-1.

2.1.2: Process
The Process field specifies the file that contains the deposit and etch sequence needed to build a device. The process
file is stored in a Devices subdirectory of the project_name directory. Clicking on the Process Editor icon from the
Solid Model Builder dialog opens the Process Editor, shown in Figure U2-3.
Figure U2-3 Process Editor

Process Library
Process
description
Step
parameters
The Process Editor includes the Process Library, the Process Description, and the Step Parameters panes. The Process
Library includes numerous process steps from which you can select user-defined process steps, generic modeling
steps, and foundry-developed processes. The Process Description displays each step in its own row in a spreadsheet
format. Each row lists settings or parameters that are used in creating the step. When a process step is selected, the
Step Parameters window becomes active; from this window you can change step parameters.
For substrate, deposit, and delete steps, you can select a material from the active MPD, which stores properties of the
materials used in a fabrication process. Silicon, polysilicon, silicon nitride, and aluminum are typical examples of
process materials. The properties associated with the materials include strength, density, conductivity, and thermal
characteristics. The materials in the process flow are used throughout the simulation process.
For etch steps, you can select or create a mask name. These masks will become active masks in the Layout Editor.
To add steps to a process, double click on a step in the Process Library; this will add the step to last step in the Process
Description pane. You can also right click on a step in the Process Library to select other options for inserting steps.
The actual process used by a foundry for device creation is a fixed series of deposit and etch steps that will create an
optimized device. The foundry provides the process flow and design rule tolerances. In order to create an accurate
model for simulation, you will need to develop a simulated deposit and etch sequence that closely models the fabrica-
tion sequence.
CoventorWare is designed to be process-independent. This allows the software to accurately model many different
types of MEMS processes, even if they are run on different fabrication lines. In fact, the software can accommodate a
design that is transferred to a new or different process line by recharacterizing the mask set flow.
For more detailed information of the Process Editor function, see the section beginning on page U4-1.

2.1.3: Layout
CoventorWare has its own 2-D drawing and editing tool, accessed from the Layout Editor icon to the right of the Lay-
out file field in the Solid Model Builder dialog.
 Layout
This field displays the file that will be opened in the Layout Editor. A previously created file may be selected for
opening, or a new file may be named. All native layout files (*.cat) from the active project will be listed in the
drop-down menu. The drop-down menu will also include any files in the \Design_Files\Shared\Layout_Template
directory. To specify which file to open, click on the drop-down menu arrow to the right of the field to select a
file that is in the project_directory\Devices directory, or click on the Browse icon to open a .cat file, a GDS file,
a CIF file, DXF file, or netlist (*.sin) file in another directory. The icon on the right starts the Layout Editor.
Top Cell
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A top cell may be selected when opening an existing layout, and this cell will appear on the canvas when the
Layout Editor is started.
 Start Layout Editor Icon
When selecting files to be opened in the Layout Editor, you have these options from the icon’s drop-down menu:
 New from Process: When this option is selected, the masks specified in the process file are defined as the
layers in the 2-D layout file (.cat).
 New Blank Layout: This option allows you to create a layout without first defining a process.
 New from Template: This option allows you to import layer definitions from another .cat file.
 Open Layout: When this option is selected, the Layout Editor opens to the file specified in the file field.
Clicking on the Layout Editor icon opens the window seen in Figure U2-4:
Figure U2-4 2-D Layout Editor
The default interface includes

 A menu bar across the top of the window, which includes most Layout Editor functionality.

 One vertical row and two horizontal rows of icons, representing the frequently used commands or actions.
See page L2-2 for more details. A row of Modify icons is available from the Modify > Show Toolbar menu.
 An embedded Layer Browser list on the left side of the lower horizontal toolbar. Its drop-down menu shows a
list of layers and allows selection of the active drawing layer.
 A working area for drawing. Initially, a grid of white dots with a default spacing is shown to guide drawing.
 A coordinate readout in the lower left corner, displaying the current mouse cursor position.
 A Show/Hide icon, located to the immediate right of the coordinate readout, for displaying or minimizing the
Terminal Window.
 A Command line prompt at the bottom. Observe this line when executing commands because it may prompt
for intermediate actions or command parameters. This duplicates the input function of the Terminal Window.
 A red Stop icon in the lower right, for interrupting a command sequence.
Other options for generating a 2-D layout include imported layouts: Users can import designs from their own 2-D lay-
out tools. Any editor capable of generating an output file in CIF, DXF, or GDSII format can be used. The software
handles the appropriate file compatibility considerations.
For detailed information about using the Layout Editor, see the section beginning on page L2-1 of the Layout Editor
Reference.
2.1.4: Additional Options

Clicking on Show Options in the Solid Model Builder dialog displays additional options for building a solid model:
 Apply Offset Values

Applies offset values from the process file when building the model.
 Create Inverse of Device (Negate)
This function creates a 3-D model of the empty space around (and in between) the solid materials.
 Clip Device with Mask
This feature creates a 3-D cross-section of a model. The model is clipped with the mask layer selected from the
drop-down menu to the right of the Clip Device option. Use this feature to build a portion of a design so only parts
of interest appear in the 3-D model or if the design is symmetrical, build only a portion of the design.

2.2: Enter in 2-D... Think in 3-D

The Layout Editor has a function beyond that of a basic drawing tool. While the Layout Editor can create nearly any
type of polygon, arc, or shape, its main purpose is to build mask sets for foundry processing and to design 2-D tem-
plates used to make 3-D solid models. For this reason, the depth dimension that makes the final product three-dimen-
sional must always be considered while using the tool.
The depth is supplied by the parameters set in the Process Editor. The model uses a series of deposit and etch steps to
create a depth profile. A deposit is an addition of material to an entire wafer surface, with the deposition performed in
a number of different ways. The Layout Editor’s drawing layers provide the information that allows the Process Edi-
tor to etch some of this material selectively. The procedure continues until the desired buildup and removal of mate-
rial is complete. The final product is either a completed physical wafer with different thicknesses through the
individual die or a simulated 3-D solid model that attempts to approximate the final chip.
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Because of physical limitations and processing chemistry associated with wafer manufacturing, vendors provide
design rule guidance that limits the feature sizes and spacing tolerances at the 2-D level. Any Layout Editor design
must conform to these rules to ensure that the final wafer will function as required, work consistently after many parts
are manufactured, and work reliably under a variety of environmental conditions.
The Solid Modeler uses mask layers, light/dark fields, and photoresist polarity to construct the solid model. This sec-
tion explains how the Layout Editor and Process Editor outputs are integrated.
2.2.1: Masks and Mask Layers

A mask can be composed of multiple mask layers. Each mask layer is associated with an attribute called Layer Polar-
ity on Mask (set in the Layout Editor/LayerBrowser), which indicates how the mask layers construct the mask final
geometry. If the layer polarity is +, the mask layer positively contributes to the mask. If the layer polarity is -, the
mask negatively contributes to the mask. The combination of mask layers is NOT sequence sensitive. All the positive
mask layer components are combined together first, then the negative mask layers are subtracted.
Figure U2-5 Creating a Mask with Multiple Layers
Mask layer combination Final Mask Geometry
Layer polarity is not taken into account when exporting in GDS format. All objects will be positive.
See page L1-9 for more details on layer settings.

2.2.2: Dark and Light Fields

The Layout Editor/LayerBrowser Dark/Light Mask Field indicates which areas are exposed to light or UV, and which
areas are not.
 If a light mask field value is specified, light or UV cannot go through the areas enclosed by the mask bound-
ary geometry, as shown in Figure U2-6a below.
 If a dark mask field is specified, light cannot go through the area outside the mask boundary geometry
enclosed area, as shown in Figure U2-6b below.
Figure U2-6 Dark and Light Mask Fields
a. Light Mask b. Dark Mask
2.2.3: Photoresist Polarity

The photoresist polarity, set in the Process Editor, indicates the protection mode under the mask:
 The positive photoresist polarity means the material under the opaque mask will be protected from etching,
and the material under the transparent mask will be etched.
 The negative photoresist polarity means the material under the opaque mask will be etched, and the comple-
ment area is protected from etching.
Positive Photoresist Polarity Negative Photoresist Polarity
See page U4-44 for more details on photoresist polarity.
2.2.4: Determining the Model Geometry

For the Solid Modeler, an etch either removes the material within the mask boundary to make a hole or removes the
material outside the mask boundary so that a shape remains. The Solid Modeler uses the mask light field value (or
Mask Polarity) and the photoresist polarity to determine what to etch and what to leave behind.
Table U2-1 summarizes the relationship between the dark\light fields, the photoresist polarity, and the resultant
geometry. The mask field value are indicated with Boolean values: light (true +) and dark (false -). The result polarity
is the product of light field value and the photoresist polarity. If the mask is empty (has no geometry), the correspond-
ing behaviors are also listed in the following table:

Table U2-1 Determining the Geometry of the Solid Model

Empty Mask
Dark\Light Field Value Photoresist Polarity Result
Handling
Light (+) Positive (+) Material remains (removes outside Etching all (+)
mask boundary material, +)
Light (+) Negative (-) Makes a hole (removes inside mask Etching nothing (-)
boundary material, -)
Dark (-) Positive (+) Makes a hole (-) Etching nothing (-)
Dark (-) Negative (-) Material remains (+) Etching all (+)
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2.2.5: Building and Viewing a 3-D Model
A Layout Editor file, MPD file, and process file can be used to build a 3-D solid model. The Preprocessor visual
interface allows detailed examination of the 3-D model.
To build the 3-D model using a 2-D layout and a process file:
1. From the Console, click on the Build Solid Model icon.

2. Enter a name in the Model/Mesh field.
3. Select the desired process (proc) and MPD files. It is not necessary to use the same process file as that used
when the layout was created, but if the mask names in the process file do not match the layer names in the
layout, the model will not build correctly.
4. Select the desired layout file and designate a Top Cell; this is the cell that will be built. Figure U2-7 shows the
layout created in the Layout Editor before the 3-D build.
Figure U2-7 2-D Layout of Optical Mirror
5. Click on Build.
6. The Preprocessor opens automatically after a successful build. If the build is not successful, an error message
will appear, and the reason for failure will appear in the log.

Figure U2-8 3-D Model of Optical Mirror
2.2.6: Example: Creating a Sphere

The example that follows shows how the process and layout interact to create a sphere.
Process
Figure U2-9 shows the process used to create a sphere. The sphere is created with five steps. The first two steps
deposit and etch aluminum to create a base for the sphere. The conformal shell deposit creates the rounded bottom for
the sphere. The deposit and etch of chromium creates the sphere, and rounded corners step creates the final sphere
shape.
Figure U2-9 Sphere Process
Note the following:

 The conformal shell at Step 3 after the etch with mask Round should have rounded corners set to all with a
radius set to the desired sphere radius r.
 The conformal shell at Step 3 and the planar fill at Step 4 must have thicknesses equal to r.
 The straight cut at step 5 must be defined by depth with value r.
 The Round Corners must be for all corners and of radius r.
Each of this steps is shown below.

Figure U2-10 Steps 3-6

Step 3
Step 4
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Step 5
Step 6
Layout
The layout, shown below, has two circular masks. The radius of the Round mask was used to define the depth and
thicknesses of the process step operations.

Figure U2-11 Sphere Layout
2r
2.2.7: Solid Model

Below is shown the final solid model with all the layers shown and with only the sphere layer shown.
Figure U2-12 Sphere Model

By hiding some of the layers, we can see how the solid model was created. When we hide the Base2 and sphere lay-
ers, we see the geometry created with the deposit and etch of the aluminum. The aluminum is etched with the larger
circle mask (Round) to create a base for the sphere.
Figure U2-13 Geometry Created with Deposit and Etch of Aluminum
By hiding the sphere layer, we see how the conformal deposit further defines the base of the sphere:
Figure U2-14 Geometry Created with Conformal Deposit
The Planar Fill, Straight Cut, and Round Corners steps create and shape the final sphere geometry. Without the
Round Corners steps, the solid model would have looked like this:

Figure U2-15 Solid Model without Round Corners Step
2.3: Tutorials
For tutorials that demonstrate how the various CoventorWare components interact to create a solid model, see the fol-
lowing:
 Mirror Array Tutorial: This tutorial, starting on page T12-1, shows how to design a 2-D layout of a mirror
array. It demonstrates techniques such as how to create basic objects such as a path, rectangle, circle, or pie;
how to correct errors, how to create arrays; how to reference other cells, how to modify objects, how to move
objects, points, and edges; and how to avoid repetitious mouse clicks. The tutorial also shows how to build a
3-D model of a 2-D layout.
 Electromechanical Design of a Basic MEMS Device: This tutorial, starting on page T2-1, provides a thor-
ough explanation of how to design a simple cantilever beam using a material database, the Process Editor, the
Layout Editor, and the 3-D modeler. For those users with the Analyzer suite, the tutorial has several exercises
demonstrating MemElectro, MemMech, and CoSolveEM capabilities.
 Mirror Design Tutorial: The Mirror Design tutorial shows how to use a layout to partition a device.

Section 3: Material Properties Database Version 10.3
Section 3: Material Properties Database
To create a solid model, the user needs a material properties database file, a process file, and a layout. The material
properties database file, which has a .mpd extension, stores characteristics of the materials used in a fabrication pro-
cess. The properties associated with the materials include strength, density, conductivity, and thermal characteristics.
A material is selected for each of the deposit steps in the process. Simulation results depend on the physical and
chemical properties of the materials that make up the model.
CoventorWare provides a database for storing all material properties likely to be used in a solver calculation. This
data is stored in the mpd1.mpd file, which is placed in a folder named MPD in the user’s Shared directory when Cov-
entorWare is run for the first time. The default material properties database file contains forty common materials. The
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file is accessed and edited from the Materials Editor. When any material is selected, its physical properties are auto-
matically displayed. These properties may be edited by simply replacing the values shown with new values desired.
The material properties for each material in the default MPD are intended as guidelines for the user. Maximum
accuracy is obtained when the user either edits the properties of a listed material for an individual design, or creates
a new material and inputs its specific material properties.
In general, the foundry should dictate the material properties for the materials used for its process. Any simulations
run using different values will not be as accurate. However, there may be occasions where users will want to update
the database with new materials and material properties, or choose local parameters stored with the project that are
not permanently updated in the database.
For example:
 Users may be working with more than one foundry with different material characteristics. The user may want
to change some parameters to determine the sensitivity of the model to a material change or go beyond the
range of specifications offered by a variety of foundries to explore a worst-case scenario.
 Material property values can be updated as more information is known. The user may not have the latest
foundry file, but may still know that a specific material has different values.
 The user may need materials to have characteristics that fall within a range for the model to work properly.
This can help determine the best foundry to use for a specific design.
 The user may be part of a large company with an in-house processing facility, where material values can be
modified (with different temperature/time profiles during processing, for instance).
 The in-house facility may be phasing in a new process, and the user may need to know how the change will
affect the model.
The Materials Editor is very tolerant; that is, it will not object to data that is unrealistic or that violates foundry
specifications.

3.1: Access to the Material Properties Database

The database can be accessed from two places within the software: the Console and the Preprocessor.
3.1.1: Accessing the Database from the Console

From the Console, clicking on the Build Solid Model icon opens the Solid Model Builder dialog. From this dialog,
you can select a material database, create a new material database, or access an existing database to view or edit its
properties. Use the Browse icon to the right of the Materials field to select an existing database. Use the Open speci-
fied material database file icon to the right of the Materials field to open the Materials Editor dialog, seen below. This
dialog provides access for viewing and changing existing properties, and for adding new materials to the database.
By default, the Solid Model Builder points to the mpd1.mpd file that is in your \\workspace\Shared\MPD directory. If
you would like to set another directory as the default location of your mpd files, set the COV_MPD_DIR environ-
ment variable to the absolute file path of the desired directory location. To specify another file as your default MPD,
set the COV_MPD_FILE environment variable to the desired file name (located in the default directory or the direc-
tory specified by the COV_MPD_DIR environment variable). See page U1-43 for more details.
To create a new database, click on the arrow beside the Materials Editor icon, and select New. After entering a name
for the new database, the Materials Editor dialog will open with an entry for the default AIR material.

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3.1.2: Accessing the Database from the Preprocessor
The material properties database can also be accessed from within the Preprocessor: right click on a region, layer, or
part and select Properties, or with the entity selected, open the Edit menu of the Preprocessor’s menu bar and select
Properties. Changes made here will only apply to the model displayed and are saved with the model when the model
is saved; the material database is not changed.
Figure U3-1 Material Properties Database Dialog
3.1.3: Database Window Functions

The Materials Editor appears the same regardless of the access location selected. If new materials are added, the
information becomes part of the database. Changes are written to the database when the Editor is closed, or when
another material is selected. If the database is accessed from the Preprocessor, changes are written to the model when
the model is saved. For including a variation of an existing material, select that material and then choose Copy

Material. Enter a name for the variant and make the differentiating changes in the material’s properties. When Delete
Material is clicked, the selected material is permanently deleted. The Import Material button can be used to import
material properties stored in an MPD file or in a database model. Note that there is no Undo function.
When the Materials Editor is accessed from the Console, changes are written to the MPD file. If access is through
the Preprocessor, changes will only apply to the model displayed.
3.1.4: Initial Material Property Assignment

Whenever the user creates a new model, material properties are automatically assigned to the layers based on the
material name that was assigned to each layer in the Process Editor. The material properties are taken from the mate-
rial database specified in the Solid Model Builder dialog. If a layer is assigned a material name that is not available in
the material database, the property values are set to zero.
If the model was created outside of CoventorWare, the names of the materials used may not be in the database. To
correct this, either add new materials to the database or, if the materials are present but the names are different, simply
use the Material Editor’s Copy Material button. Select the material with the desired properties from the Materials
list, click on Copy Material, and then provide the material name specified for the new layer.
A material name can have no more than 32 characters.
3.1.5: Importing Materials

Materials can be imported from an MPD file or from a database model. Clicking on the Import Material button in
the Materials Editor opens the dialog shown below:
The user has two choices for import: Materials Database File or Model/Mesh. If the user selects the Materials Data-
base File option, the file browser to the right of the Source field becomes active. If the user selects the Model/Mesh
option, the file browser icon is grayed out, and the drop-down menu in the Source field becomes active. The user then
selects a model from the current project’s database. To import materials from a model outside the current project
database, the user must first import that model.
After selecting the source of the material properties, the user then selects which materials to import. Use the Ctrl key
to make multiple selections.

Click on Import to add the materials. If the selected materials already exist in the MPD file or database model, the
software will report that it is unable to import because the material(s) already exist. To overwrite the properties of an
existing material, check the Overwrite materials with the same name option before clicking on Import.
If the Materials Editor is accessed from the Console, any imported material will be stored in the mpd file and will
affect all models. If the Materials Editor is accessed from within the Preprocessor, any imported material will affect
only the active model.
3.2: Material Properties

The material property type is selected from the drop-down menu in the field beside the property name. In turn, each
property type is associated with a different Edit window. The material properties and their associated property types
are shown in Table U3-1.
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Table U3-1 Material Properties and Possible Types
Material property Property type
Elastic-Iso, ElasticIsoTable-T, ElasticIsoPoly-T (ElasticIsoTable-T and Poly-T specify

Young’s Modulus and Poisson’s Ratio as a function of temperature), Elastic-Ortho, Elastic-
Elastic Constant Ortho100 (for 100 crystallographic planes), Elastic-Ortho110-Right or Elastic-Ortho110-Left
(for 110 crystallographic planes), Elastic-Ortho111 (for 111 crystallographic planes), Elastic-
Cubic, and Elastic-AnIso
Constant-Scalar, Polynomial-T (temperature-dependent polynomials; see "Computing Poly-T

Density (kg/µm3) Values" on page U3-27), and Table-T (temperature-dependent table entries; see "Computing
Table-T Values on page U3-27)
Stress (MPa) Constant-Scalar, AnIso
TCE Integral Form Constant-Scalar, Constant-ZeroStressTemp, Polynomial-T, Poly-T-ZeroStressTemp, Table-T,

(1/K) Table-T-ZeroStressTemp
Thermal Conductivity
Constant-Scalar, Polynomial-T, and Table-T
(pW/µmK)
Specific Heat (pJ/kgK) Constant-Scalar, Polynomial-T, and Table-T
Constant-Scalar, Constant-Scalar-JD, Polynomial-T, Table-T, Polynomial-(T, z) (dopant-

Electrical Conductivity
dependent polynomial), Table-(T,z) (dopant-dependent table entries), Table-(T,z)-JD, Limited
(pS/µm) Diffusion
Dielectric Constant-Scalar, Piezoelectric Stress, Piezoelectric Strain, Polynomial-T, and Table-T
Constant-Scalar, Polynomial-T, PolyLog-T, Table-T, Bingham, Power Law, Carreau, Casson,

Viscosity (kg/µm/s)
GenericViscosity
Constant-Scalar, Polynomial-T, Table-T, Constant-Scalar-100, Constant-Scalar-110_Right,

PiezoResistiveCoeffient
Constant-Scalar-110_Left, Constant-Scalar-111
File browser to select a text file containing material property data. The file name must end with
Custom Properties File
.inp.

3.2.1: Elastic Constants

The Elastic Constant material property specifies linear elastic behavior. The general constitutive relationship between
stress and strain can be written as
σ[ 6 × 1 ] = C[ 6 × 6 ] ε[ 6 × 1 ]
σ xx C xxxx C xxyy C xxzz C xxyz C xxzx C xxxy ε xx

σ yy C yyxx C yyyy C yyzz C yyyz C yyzx C yyxy ε yy
σ zz C zzxx C zzyy C zzzz C zzyz C zzzx C zzxy ε zz
=
σ yz C yzxx C yzyy C yzzz C yzyz C yzzx C yzxy γ yz
σ zx C zxxx C zxyy C zxzz C zxyz C zxzx C zxxy γ zx
σ xy C xyxx C xyyy C xyzz C xyyz C xyzx C xyxy γ xy
where C is the stiffness matrix.

The constitutive relationship can also be expressed as
–1
ε[ 6 × 1 ] = C[ 6 × 6 ] σ[ 6 × 1 ]
where C-1 is the compliance matrix.

Depending on the type of elasticity the user wants to specify, CoventorWare uses the compliance or the stiffness
matrices to describe the stress-strain relationship. The convention in CoventorWare is to order the stress and strain
tensors xx, yy, zz, yz, xz, xy and to use the common measure of the total shear strain engineering shear strain. Some
references order the tensors differently and/or use a different measure of the shear strain, such as the average shear
strain. The user should be careful to resolve any differences before entering reference material properties into the
database.
A material can be considered isotropic, orthotropic, or anisotropic. Isotropic materials have an infinite number of
symmetry planes passing through every point. Orthotropic materials have two orthogonal symmetry planes for the
elastic property. Anisotropic materials have no symmetry planes. When specifying the elastic constants, the user has
these options:
Elastic-Iso: The user specifies elasticity using Young’s modulus E (in MPa), and Poisson’s ratio υ. CoventorWare
uses the compliance matrix to define the stress-strain relationship:
ε xx σ xx
1 ⁄ E –υ ⁄ E –υ ⁄ E 0 0 0
ε yy –υ ⁄ E 1 ⁄ E –υ ⁄ E 0 0 0 σ yy
ε zz σ zz
= –υ ⁄ E –υ ⁄ E 1 ⁄ E 0 0 0
γ yz 0 0 0 2(1 + υ) ⁄ E 0 0 σ yz
γ zx 0 0 0 0 2( 1 + υ) ⁄ E 0 σ zx
γ xy 0 0 0 0 0 2(1 + υ) ⁄ E σ xy
These stability requirements must be met: E > 0, and 0 < υ < 0.5. Poisson ratio values close to 0.5 result in nearly
incompressible behavior; for these ratios, some convergence problems may occur. A value is 0.5 will not be accepted
by MemMech, as it implies that the stiffness becomes infinite.
ElasticIsoTable-T: The user specifies Young’s modulus E (in MPa) and Poisson’s ratio υ as a function of tempera-
ture (T in Kelvin). The data must be given in increasing order of temperature. CoventorWare will interpolate linearly

for the values of E and υ between those given. E and υ would be assumed to constant outside the range of given T.
The simple compliance matrix as shown for ElasticIso is calculated and used to define the stress-strain relationship at
each temperature.
ElasticIsoPoly-T: The user specifies polynomials for the following equations:
2 3 4 5
E = A0 + A1 T + A2 T + A3 T + A4 T + A5 T
2 3 4 5
υ = A0 + A1 T + A2 T + A3 T + A4 T + A5 T
Using the polynomial coefficients, CoventorWare will first create a ElasticIsoTable of E vs T and υ vs T for a range
of temperature from 100K to 1900K with a step value of 100K. This table of values will be computed even before the
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simulation starts. In the actual simulation, E and υ will be calculated through a linear interpolation within those eigh-
teen sub-ranges as in ElasticIsoTable-T. The final compliance matrix calculation at each temperature would be done
as in Elastic-Iso.
Elastic-Ortho: The user specifies the elasticity in an orthotropic material using Ex, Ey, Ez, υxy, υxz, υyz, and Gxy, Gxz,
Gyz. The compliance matrix is used to define the stress-strain relationship as follows:
ε xx 1 ⁄ Ex – υ yx ⁄ E y – υ zx ⁄ E z 0 0 0 σ xx
ε yy – υ xy ⁄ E x 1 ⁄ Ey – υ zy ⁄ E z 0 0 0 σ yy
ε zz – υ xz ⁄ E x – υ yz ⁄ E y 1 ⁄ Ez 0 0 0 σ zz
=
γ yz 0 0 0 1 ⁄ G yz 0 0 σ yz
γ zx 0 0 0 0 1 ⁄ G xz 0 σ zx
γ xy 0 0 0 0 0 1 ⁄ G xy σ xy
The quantity υij has the physical interpretation of the Poisson's ratio that characterizes the transverse strain in the j-
direction, when the material is stressed in the i-direction. In general, υij is not equal to υji: they are related by
υij /Ei = υji /Ej
The material stability requirements are
 Ex, Ey, Ez, Gxy, Gxz, Gyz > 0
 |υxy| < (Ex /Ey) 1/2

 |υxz| < (EX /EZ) 1/2
 |υyz| < (Ey /Ez) 1/2
 The determinant of the matrix has to be strictly positive.
When the left-hand side of the inequality approaches zero, the material exhibits incompressible behavior. Using the
relations υij / Ei = υji / Ej, the second, third, and fourth restrictions in the above set can also be expressed as
 |υyx| < (Ey /Ex) 1/2
 |υzx| < (Ez /Ex) 1/2
 |υzy| < (Ez /Ey) 1/2
Elastic-Ortho100, 110-Right, 110-Left, 111: These options are for Silicon 100, Silicon 110, or Silicon 111 wafers.
Crystalline silicon is a cubic material, i.e., it requires three independent material constants to describe its behavior.
The values of these constants, which can be found in literature, are

D11 = D22 = D33 = 165 GPa

D12 = D13 = D23 = 64 GPa
D44 = D55 = D66 = 80 GPa (Note that CoventorWare units are MPa)
In order to assign correct material properties for using MemPZR, use the Elastic-Ortho100, Elastic-Ortho110-Right,
Elastic-Ortho110-Left, or Elastic-Ortho111 option, depending on wafer orientation; see details below. For orthotropic
materials. CoventorWare accepts the engineering constants, E, υ, and G that are associated with the coefficients of
the compliance matrix (where the units for E and G are in MPa), rather than the values of the stiffness matrix, D11 to
D66, listed above.
Ex = Ey = Ez = 1.30191e+5
υxy = υxz = υyz = 2.78340e-1
Gxy = Gxz = Gyz = 7.96240e+4
These values correspond to the cube principal axes; therefore, depending on the wafer type as defined by its flat and
top normals, the wafer should be oriented so that these normals point in the correct direction with respect to the global
coordinate system. For more information on how to orient the wafer, see “Assigning Single Crystal Silicon Material
Properties” on page U3-9.
Elastic-Cubic: The user specifies elasticity using Young’s modulus E (in MPa), Poisson’s ratio υ, and shear modulus
G. The compliance matrix is used to define the stress-strain relationship as follows:
ε xx σ xx
1 ⁄ E –υ ⁄ E –υ ⁄ E 0 0 0
ε yy –υ ⁄ E 1 ⁄ E –υ ⁄ E 0 0 0 σ yy
ε zz σ zz
= –υ ⁄ E –υ ⁄ E 1 ⁄ E 0 0 0
γ yz 0 0 0 1⁄G 0 0 σ yz
γ zx 0 0 0 0 1⁄G 0 σ zx
γ xy 0 0 0 0 0 1⁄G σ xy
These stability requirements must be met:
 E>0
 G>0
 0 < υ < 0.5
Poisson ratio values close to 0.5 result in nearly incompressible behavior; for these ratios some convergence problems
may occur.
Elastic-AnIso: The user defines elasticity in anisotropic materials using twenty-one independent elastic stiffness
parameters. The stress-strain relations are calculated as follows:
 σ xx  C xxxx C xxyy C xxzz C xxyz C xxzx C xxxy  ε xx 

   
 σ yy  0 C yyyy C yyzz C yyyz C yyzx C yyxy  ε yy 
   
 σ zz  0 0 C zzzz C zzyz C zzzx C zzxy  ε zz 
  =  
 σ yz  0 0 0 C yzyz C yzzx C yzxy  γ yz 
  symmetric  
 σ zx  0 0 0 0 C zxzx C zxxy  γ zx 
   
 σ xy  0 0 0 0 0 C xyxy  γ xy 

The material stability requirements are too complicated to be expressed in simple equations. It is required that the
det[C] is positive definite, and hence, all of the eigenvalues of the elasticity matrix should be positive.
For an on-line tutorial that demonstrates how to compute Young’s modulus and Poisson’s ratio for any elastic
material with cubic symmetry, go to http://www.kaajakari.net/%7Eville/research/tutorials/tutorials.html, and select
the "Silicon as an anisotropic mechanical material" tutorial.
Assigning Single Crystal Silicon Material Properties

Single crystal silicon is a cubic material, so proper material property definition and device orientation with respect to
the wafer crystallographic structure are critical. Constructing devices on SOI wafers or using a silicon wafer for more
than just a substrate for surface micromachining will require modeling the material properties correctly. This section
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outlines the considerations for assigning these material properties. [1]
Silicon Crystal Orientation

The crystalline structure for materials in which the properties depend on the crystal orientation, such as single crystal
silicon, is described by Miller indices, which are three-integer triples (hkl), corresponding to an XYZ coordinate sys-
tem. The triple can describe either a direction or a plane perpendicular to the direction. The hkl values are the recipro-
cals of the coordinates of the intercepts on the XYZ axes, multiplied by the lowest common denominator. Figure U3-
2 illustrates the Miller indices; by convention the directions [100], [010], and [001] are the XYZ Cartesian axes.
Figure U3-2 Miller Indices in a Cubic Crystal
Unless otherwise specified, when referring to directions and angles within a cubic crystal, such as the silicon lattice,
the XYZ-axes are aligned with the <100> direction family, as shown in Figure U3-2. For example, by default in Cov-
entorWare, for traditional elastic constant material property designations such as isotropic, orthotropic, or cubic, the
global coordinate system (X,Y,Z) coincides with the cube principal axes. As such, the X, Y and Z axes are parallel
with the normals of <100> planes. In the context of design, this default implies that if a device layout is aligned with
the XY axis, the X and Y axes of the device will be aligned with the <100> silicon crystal directions. This is illus-
trated in Figure U3-3, which shows the design layout in the CoventorWare’s Layout Editor; by default the flat of the
"substrate" will be aligned with <100> silicon crystal directions.

Figure U3-3 Design Layout as it Corresponds to Crystal Directions
While the most commonly encountered convention, and appropriate for devices in which silicon acts simply as the
substrate, this scheme is inappropriate for devices constructed on actual fabrication wafers in which the anisotropic
material properties of silicon are important to the device operation.
Silicon Crystal Orientation in Fabrication Wafers

For fabrication silicon wafers, the silicon lattice is specifically oriented within the wafer, depending on the wafer
type. Wafers are designated by the orientation of the silicon crystal within the wafer in two ways:
 The orientation of the plane of the surface of the wafer is given; for example, an "n-type (100) wafer" has the
top surface of the wafer oriented in the (100) plane of the silicon crystal.
 The location of the wafer primary (and potentially secondary) flat(s) provides a reference to identify the pla-
nar orientation of the crystal lattice within the wafer.
For example, in silicon (100) wafers the flat is aligned with the [110] crystalline direction, which is at 45 degrees
from the <100> planes. Figure U3-4 shows the silicon lattice orientation for a common (100) wafer; the X and Y axes
are in the <110> directions.
Figure U3-4 Crystal Orientation in a 100mm-Diameter Silicon Wafer
(a) Orientation of a (100) wafer (b) directions and axes in a (100) wafer
Similarly, silicon (110) wafers offer a silicon lattice that features the top surface of the wafer oriented in the (110)
plane of the silicon crystal with the primary flat aligned with the [111] plane. Additionally, secondary wafer flats
located to the right or left of the primary wafer flat indicate the direction of additional <111> planes, as shown in Fig-
ure U3-5:

Figure U3-5 Secondary Flats of Silicon (110) Wafer, <111> Primary Flat
Left secondary flat Right secondary flat
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Currently, CoventorWare does not offer automatic material property transformation for silicon (110) wafers with flats
aligned along <110> planes.
Silicon (111) wafers offer a silicon lattice that features the top surface of the wafer orientated in the (111) plane of the
silicon crystal with the primary flat aligned with the [110] plane:
Figure 3-6 Crystal Orientation in Silicon (111) Wafer, <110> Flat
Given that fabrication wafers feature a variety of silicon crystal lattice orientations, and that even the most common
fabrication wafers do not feature wafer flats aligned with the cube principal axes (parallel to <100> planes), achieving
accurate simulation results involving the anisotropic material properties of silicon is dependent on correctly modeling
two independent input parameters:
 designation of material properties
 device layout relative to the wafer reference frame
For the second bullet, when modeling a device, the user should enter the MEMS geometry in the layout following the
conventional orientation with the wafer flat "down," i.e., parallel to the floor when the wafer is held up vertically for
examination, or toward the operator when inserted horizontally into processing equipment. This is a consistent
requirement, unless material properties are specifically rotated for a particular device layout.
The first bullet is addressed below. CoventorWare offers three alternatives for assigning material properties for sili-
con wafers, depending on the silicon properties known.

1) If the orthotropic elastic constants with respect to the cube principal axes are known
(the directions [100], [010], and [001] are the XYZ Cartesian axes):
CoventorWare simplifies the task of correctly assigning material properties by rotating the material properties instead
of the layout or device itself, thus preserving invariant quantities such as Mises stress.
The elastic constants with respect to the cube principal axes are then input using one of the specific Elastic-
Ortho<wafer type> designations:
Ex =Ey = Ez = 130 GPa
υyz =υzx = υxy = 0.28
Gyz =Gzx = Gxy = 79.6 GPa
To take advantage of this feature in CoventorWare, do the following:
For Silicon 100 wafers
 Align the wafer top normal with the Z-axis.
 Align the wafer flat normal with the negative Y-axis.
 Select Elastic-Ortho100 when defining Elastic Constants.
 Select Constant_Scalar100 when defining Piezoresistive Coefficients (see page U3-25 for more information
on this material property)
A "Silicon_100" material is available in the default mpd1.mpd to illustrate how this type of material is defined.
Figure U3-7 shows a cantilever structure composed of Silicon_100 material using Elastic-Ortho constants. The flat of
the substrate will be aligned with <110> silicon crystal directions. In this case there is no need to rotate the layout or
solid model, or any need to manually transform the orthotropic elastic constants.
Figure U3-7 Silicon 100 Material with Elastic-Ortho100

E, υ, and G Elastic-Ortho100 constants
Making use of the Elastic_Ortho100 functionality is equivalent to having transformed the material properties manu-
ally based on the wafer type or to have used the cube axis-aligned properties and rotated the model by 45 degrees
about the Z axis. Figure U3-8 shows equivalent problem statements when using cube axis-aligned elastic constants:

Figure U3-8 Cube-Axis Aligned Elastic Constants

E, υ, and G Elastic-Ortho100 constants E, υ, and G Elastic-Ortho constants
For Silicon 110 wafers with <111> primary flat:
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 Align the wafer primary flat normal with the negative Y-axis.
 If the secondary flat is to the right of the primary flat, select Elastic-Ortho110-Right when defining Elastic
Constants.
 If the secondary flat is to the left of the primary flat, select Elastic-Ortho110-Left when defining Elastic Con-
stants.
For Silicon 111 wafers
 Align the wafer flat normal with the negative Y-axis.
 Select Elastic-Ortho111 when defining Elastic Constants.
 Select Constant_Scalar111 when defining Piezoresistive Coefficients (see page U3-25 for more information).
2) If the orthotropic elastic constants in the frame of reference of the fabricated wafer are
known:
If the orthotropic elastic constants in the frame of reference of the fabricated wafer are known, for example, the elas-
ticity values in the frame of reference of a standard (100) silicon wafer - where XYZ axes map to [110], [110], [001],
the traditional Elastic-Ortho elastic constants can be used to input the orthotropic coefficients. Again, the user is
required to follow the convention that MEMS geometry should be entered in the layout with the notion that the wafer
flat normal aligns with the negative Y axis.
3) If the anisotropic stiffness matrix components are known:

CoventorWare offers the ability to define elasticity using twenty-one independent elastic stiffness parameters. Care
must be taken to ensure that the parameters are appropriate for the fabrication wafer type being used. Additionally,
the user is required to either take into account device orientation relative to the wafer frame of reference when com-
puting the material property values or follow the convention that MEMS geometry should be entered in the layout
with the notion that the wafer flat normal aligns with the negative Y axis.
A "Silicon_100_AnIso_notation" material is available in the default mpd1.mpd to illustrate how this type of material
is defined, and Figure U3-9 illustrates the effect of using this material.

Figure U3-9 Effect of Silicon_100_AnIso Notation on Modal Results

With Axis-Aligned Geometry 45 Degree-Rotated Geometry
Part orientation is not critical if the material is isotropic.
3.2.2: Density
This material property must be defined for transient dynamic analysis, transient heat transfer analysis, modal analy-
sis, and adiabatic stress analysis. Density can be specified as a function of temperature using the Poly-T or Table-T
options.
3.2.3: Stress
The Stress property can be used to specify an initial stress distribution in a material layer. In MEMS, initial stress dis-
tributions are often caused by thermal cycling during the fabrication process, and are induced by differences in the
Coefficient of Thermal Expansion (CTE) for different material layers.
This property should only be used to specify an initial stress field in a material layer that is completely flat. It
should not be used for a conformal layer because the stress distribution will not be correct in conformal regions of
the layer. The MemMech Advanced Settings File prestress option (see page R4-59 of the Field Solver Reference,
provides a way to correctly specify initial stress in any type of layer, including a conformal layer. It can be used to
define hydrostatic, planar, and axial stress, as well as a stress gradient through the thickness of a layer.
Note that the stress set within the Advanced Settings file will override any stress values set for the part material
using this property.
The Anisotropic option allows specification of an anisotropic stress field, i.e., a stress field that has different stress
values for the global X, Y, and Z directions. This option is usually the most appropriate one for MEMS applications.
Which stress components to set depends on the orientation of the thin material layer. If the thinnest dimension of the
layer is in the Z direction (typical), the user should set the x,y stress components to the same, non-zero value and the
z stress component to zero. Setting two stress components to the same value and the other to zero corresponds to the
planar option in the MemMech Advanced Settings file (see page R4-59).
The Constant-Scalar option allows specification of an isotropic stress field, i.e., a stress field that is uniform in all
directions. Such a stress field could be caused by hydrostatic pressure on all sides of a part. Applications for this
option are rare in MEMS, thus it is expected that this option is rarely the right choice.
Use negative values for compressive prestress conditions, and use positive values for tensile prestress conditions.

3.2.4: TCE
This material property is used to compute thermal strains. In addition to the Constant-Scalar, Table-T, and Poly-T
options, there are the Constant-ZeroStressTemp, Poly-T-ZeroStressTemp, and Table-T-ZeroStressTemp options. These
options allow the user to input a zero stress temperature, which is the temperature at which there is no thermally
induced stress. The temperature used to calculate the stress is the difference between the simulation temperature and
the zero-stress temperature.
The zero-stress options can be used to calculate stresses resulting from fabrication. For example, assume that a mate-
rial is stress free when deposited under high-temperature conditions. If the material is bonded to another material,
when it cools down the two bonded materials will contract at different rates, and there will be stress and possibly
deformation in both materials. The user can specify the temperature of deposition as the zero-stress temperature, then
simulate at another temperature, such as the normal operating temperature of the device, and account for thermally
induced stresses.
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For thermomechanical analyses without the zero stress temperature defined, the default zero stress temperature is
273.15 K.
TCE and MemMech

MemMech and CoSolveEM use MPD-specified density vs. temperature data as an initial condition only. All subse-
quent calculations are based on a linear thermal expansion of coefficients.
Some handbooks give the temperature expansion values in differential form:
th
dε = α' ( θ )dθ
where εth is the thermal strain, α is the temperature coefficient, and θ is the current temperature.
MemMech requires the temperature coefficient of expansion values to be in integral form. Use the following equation
to convert to the integral form:
θ 1 θ
θ0 0 0
th
ε = α' d θ  α ( θ ) = - α' dθ
-------------
θ–θ θ
where θ 0 is a chosen reference temperature.
To illustrate, assume α ' is a series of constant values: α1 ' between θ 0 and θ 1; α2 ' between θ 1 and θ 2; α3 ' between
θ 2 and θ 3 and so forth. Then,
th 1 0
ε1 = α 1' ( θ – θ )
th th 2 1
ε2 = ε 1 + α 2' ( θ – θ )
th th 3 2
ε3 = ε 2 + α 3' ( θ – θ )
The corresponding expansion coefficients required by the solver are obtained as
th 1 0
α1 = ε1 ⁄ ( θ – θ )
th 2 0
α2 = ε2 ⁄ ( θ – θ )

th 3 0
α3 = ε3 ⁄ ( θ – θ )
The Table-T and Table-T ZeroStressTemp options require the explicit input of the θi and αi values in the form of a
table.
For the Poly-T and Poly-T-ZeroStressTemp options, MemMech uses the user-input Αi coefficients to automatically
generate the table of θi and αi values. For the Poly-T option, MemMech generates a table of nineteen θi, αi pairs
beginning at θ1= 100.0 and ending at θ19= 1900.0 degrees. For the Poly-T-StressZeroTemp option, MemMech gener-
ates a table of θi, αi pairs beginning at θ1= 5.0, incrementing θi by 5.0 degrees until reaching a maximum value of 5.0
x θ0.
It is important to remember that if the analysis temperature in an element is greater than the last value in either the
user-input or MemMech-generated table, MemMech simply takes the last value in the table for α. If the analysis tem-
perature in an element is lower than the first value in either the user-input or MemMech-generated table, MemMech
simply takes the first value in the table for α. There is no extrapolation beyond the minimum or maximum tempera-
tures in the table.
3.2.5: Thermal Conductivity

This material property must be defined for uncoupled heat transfer, coupled thermal stress, and coupled-thermal-elec-
trical analyses. The Polynomial-T and Table-T options allow thermal conductivity to be specified as a function of
temperature.
3.2.6: Specific Heat

This material property must be defined for uncoupled heat transfer, coupled thermal-stress, and coupled thermal-elec-
trical analyses. When specifying this material property, the Density property must also be set.
3.2.7: Electrical Conductivity

Electrical conductivity must be defined for coupled thermoelectrical analysis and for piezoresistive analysis. This
material type has several options:
Constant Scalar-JD: This option allows the user to specify junction depth. This indicates that the material will be
conductive where it is doped (from the surface to the junction depth). The conductivity is constant in this region.
PolynomialT, Table-T: These options allow the user to specify electrical conductivity as a function of temperature.
Polynomial-(T, z), Table-(T, z): These allow for conductivity that varies with both temperature and depth into the
material. Both values are defined by polynomials entered in separate columns.
Table-(T, z)-JD: Conductivity varies with both temperature and depth in the material but is restricted to the region
between the surface and junction depth.
Limited Diffusion: With this option, the concentration profile of the dopant is computed throughout the device from
user-supplied process parameters. Conductivity is defined by a power law and is computed in the device using the
values of concentration and temperature at the given location.
Temperature-Dependent Electrical Conductivity

To specify a temperature-dependent electrical conductivity, choose either the Table-T or Polynomial-T options. If the
Polynomial-T property type is selected, the range of temperatures used to calculate the property is 300 K to 700 K in
increments of 20 K. Outside this range, the property is assumed constant at its low 300 K or high 700 K value. An
error is generated for any coefficient that results in a zero or negative value.

Dopant Concentration-Dependent Electrical Conductivity

Two models are available in this case: direct-depth dependent electrical conductivity and limited-diffusion models.
Direct-Depth Dependence Model

In this model, the electrical conductivity, σ, is represented mathematically as
σ = σ1(z) σ2(T)
where σ1 and σ2 are user-defined functions that could be entered in a table format (option Table-(T,z)), or as second-
order polynomials in their respective arguments by defining the three coefficients for each polynomial
(option Polynomial-(T,z)).
If σ is a function of depth only:
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σ = σ1(z)
then σ2(T) should be defined as the unity function σ2(T) = 1 for all values of T. This model allows the user to take
advantage of experimental data of conductivity, which are often measured directly versus depth.
If the Polynomial-(T,z) property type is selected for electrical conductivity, the range of temperatures used to calcu-
late the property is 300 K to 700 K in increments of 20 K. Outside this range, the property is assumed constant at its
low 300 K or high 700 K value. The range for depth is 0 to 2 μm in increments of 0.1 μm. An error is generated for
any coefficient that results in a zero or negative value.
Limited-Diffusion Model
In this model the concentration profile of the dopant is computed throughout the resistor from the user-supplied pro-
cess parameters. The conductivity is defined by a power law and is computed in the resistor using the values of the
concentration and temperature at the given location.
The dopant concentration profile is computed according to the following Gaussian distribution:
2
 z 
– ---------
Q
N ( z, t ) = --------------------------- e  4Dt 
( π ⋅ D ⋅ t)
where
N: the dopant concentration (atoms /μm3)
Q: the initial surface concentration dose (atoms /μm2)
t: the process diffusion time (seconds)
D: the process dopant diffusion coefficient D = D0 e [-EA / k T]
where
D0: dopant diffusion coefficient (μm2/sec)
EA: the activation energy of the dopant (eV)
k: Boltzmann's constant (8.617e-5 eV/K)
T: the diffusion process temperature (Kelvin)
See Table U3-2 below for values of D0 and EA for several commonly used dopants.

Table U3-2 D0 and EA Values for Several Commonly Used Dopants
Dopant D0*108 (μm2/sec) EA (eV)
B 10.5 3.69
Al 8.0 3.47
Ga 3.6 3.51
In 16.5 3.90
P 10.5 3.69
As 0.32 3.56
Pb 5.6 3.95
Source: Richard C. Jaeger, Introduction to Microelectronic Fabrication, ed.: G.W. Neudeck and R.F. Pierret, vol
5 of Modular Series on Solid State Devices (Addison-Wesley Publishing, Reading, MA, 1988).
In addition to the concentration profile parameters, the user is also required to specify N0, the residual dopant concen-
tration in the wafer to determine the junction depth, after which the conductivity assumes the magnitude of the con-
ductivity of the wafer material.
The next step is to specify the functional dependence of the conductivity on the dopant concentration and tempera-
ture. This is done as follows:
σ = α Nx Ty
where α, x, and y are user-defined values. In some applications, such as pressure transducers, the resistor may be at a
uniform temperature, rendering the conductivity to be mainly a function of concentration, and thus the user would
specify y = 0. Parameters α, x, and y are found experimentally. For example, the following simple power law
σ = 63080.0 N0.757
is constructed for the p-doped silicon using a graph (see Figure U3-10) that plots the room temperature resistivity in
n- and p-doped silicon as a function of impurity concentration.

Figure U3-10 Resistivity Graph
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Reprinted with permission from:
R.F. Pierret, “Advanced Semiconductor Fundamentals”, Volume VI in the modular Series on Solid State Devices,
Addison-Wesley Publishing, Reading, MA, 1987.©
Figure U3-10 shows room temperature resistivity in n- and p-type silicon as a function of impurity concentration.
(Note that these curves are valid for either donor or acceptor impurities, but not for compensated material containing
both types of impurities.)
In the power law, N and σ are in CoventorWare units of atoms/μm3 and pS/μm respectively. For more information
see Volume V: Introduction to Microelectronics Fabrication, Gerold W. Neudeck, Robert F. Pierret, Editors.
Modular Series on Solid State Devices, Richard C. Jaeger, page 60.
3.2.8: Dielectric
The Dielectric Constant value determines whether the material is declared as a Conductor (0 value) or Dielectric
(non-zero value) in the Preprocessor (see page U5-2). The user can change the default before meshing. Note that the
user has to enter dielectric values relative to the vacuum permittivity.
Piezoelectric Analysis
The Dielectric property type has two options that can be used to run piezoelectric analysis: PiezoElectric-Strain
(strain-charge constitutive relation) and PiezoElectric-Stress (stress-charge constitutive relation). The user’s choice
depends on the units of piezoelectric constants being used. If these constants are in C/N (μm/V in CoventorWare
units), select PiezoElectric-Strain, and the coupling matrix would be d. If the constants are in C/m2 (which translates
into C/m2 =pC/μm2 in CoventorWare units), select PiezoElectric-Stress, and the coupling matrix would be e.
The piezoelectric equations written in the Strain-Charge form are

 T
 ε[ 6 × 1 ] = H[ 6 × 6 ] σ[ 6 × 1 ] + d[ 6 × 3 ] E[ 3 × 1 ] (1a)

 σ Q [ 3 × 1 ] = d [ 3 × 6 ] σ [ 6 × 1 ] + ε rσ [ 3 × 3 ] E[ 3 × 1 ] (1b)

where
ε is the strain vector (dimensionless)
σ is the stress vector µN/µm2
E is the electric field vector µN/pC, V/µm
σQ is the electric charge density displacement vector, pC/µm2
d is the PZE-strain coupling matrix, pC/µN, µm/V
H is the material compliance matrix when there is no electrical field; i.e. E =0, µm2/µN
εr is the dielectric permittivity (dielectric constant) matrix when there is constant stress (presumably σ = 0),
σ
pC/Vµm, pF/µm
The piezoelectric equations written in stress-charge form are
 T
 σ [ 6 × 1 ] = C [ 6 × 6 ] ε [ 6 × 1 ] – e [ 6 × 3 ] E [ 3 × 1 ] (2a)

 σ Q [ 3 × 1 ] = e [ 3 × 6 ] ε [ 6 × 1 ] + ε rε[ 3 × 3 ] E [ 3 × 1 ] (2b)

where
e is the PZE-stress coupling matrix pC/µm2
C is the material stiffness matrix when there is no electrical field; i.e., E =0, µN/µm2, MPa
ε r is the dielectric permittivity (dielectric constant) matrix when there is constant strain (presumably strain =
ε
0), pC/Vµm, pF/µm
The relationship between the PZE-strain coupling matrix and the PZE-stress coupling matrix is given by the follow-
ing equation:
e[ 3 × 6 ] = d[ 3 × 6 ] C[ 6 × 6 ]
The first part of the right side of equations (1a) and (2a) are governed by the user-specified material stress-strain con-
stitutive relationship shown on page U3-6. The second part of the right side of equations (1a) and (2a) are governed
by the piezoelectric coefficients.

CoventorWare Coupling Coefficient Conventions

Piezoelectric Strain-Charge Form
Standard handbooks on piezoelectric material give the coefficients for the strain-charge format in this form:
T
ε[ 6 × 1 ] = d [ 6 × 3 ] E[ 3 × 1 ]
where ε = the strain vector, and E = the electric field vector, as shown below:
ε xx ε xx d x:xx d y:xx d z:xx

ε yy ε yy d x:yy d y:yy d z:yy
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Ex
ε zz ε zz d x:zz d y:zz d z:zz
aora = Ey
ε yz γ yz d x:yz d y:yz d z:yz
Ez
ε zx γ zx d x:zx d y:zx d z:zx
ε xy γ xy d x:xy d y:xy d z:xy
Some handbooks follow the notation of xx, yy, zz, yz, zx, and xy, respectively, while some others follow xx, yy, zz,
xy, yz, zx. The subscripts in CoventorWare in order are xx, yy, zz, xy, zx, and yz, respectively. So the PZE Strain
matrix convention followed in CoventorWare is
ε xx d x:xx d y:xx d z:xx

ε yy d x:yy d y:yy d z:yy
Ex
ε zz d x:zz d y:zz d z:zz
= Ey
γ xy d x:yz d y:yz d z:yz
Ez
γ zx d x:zx d y:zx d z:zx
γ yz d x:xy d y:xy d z:xy
where
d x:xx d y:xx d z:xx

d x:yy d y:yy d z:yy
T
d x:zz d y:zz d z:zz
d
= d x:yz d y:yz d z:yz =
εr
σ d x:zx d y:zx d z:zx
d x:xy d y:xy d z:xy
εr εr εr
σxx σyy σzz
The Dielectric entries shown in the Edit PiezoElectric-Strain window are relative values to vacuum permittivity εo
= 8.85 x 10-6 pC/(V⋅µm).

The user has to determine if the source handbook is using γ or ε for the shear strains (note γxy = εxy + εyx = 2εxy)
and the order of the subscripts of the coupling coefficients, and then suitably modify the coefficients before entering
them into your material properties database. The standard nomenclature, as per, Mechanics and Behavior of Materi-
als, Frank McClintock & Ali S. Argon, Addison-Wesley Pub., 1966, is that the shear components are in terms of γ.
Thus, if the handbook has the PZE strain coupling matrix as
a g m
b h n
a b c d e f
[ d ] = g h i j k l aora [d ] = c i o a C/N (or m/V)
T
d j p
m n o p q r
e k q
f l r
CoventorWare users should use
a g m
b h n
[d ] = c i o × 10 6 aaaa
T
µm/V if the handbook uses ε for shear strain
2f 2l 2r
2e 2k 2q
2d 2j 2p
a g m
b h n
T
[d ] = c i o × 10 6 aaaa
µm/V if the handbook uses γ for shear strain
f l r
e k q
d j p
Figure U3-11 illustrates how the individual entries in the Edit PiezoElectric-Strain dialog correspond to the strain
charge equations. Note that the Dielectric entries are diagonal of the permittivity matrix.
Figure U3-11 Strain-Charge Form Equations and Corresponding Entries in Material Database
 T
 ε[ 6 × 1 ] = H[ 6 × 6 ] σ[ 6 × 1 ]+ d[ 6 × 3 ] E[ 3 × 1 ]

 D [ 3 × 1 ] = d [ 3 × 6 ] σ [ 6 × 1 ] + ε 0 ε rσ [ 3 × 3 ] E [ 3 × 1 ]


Piezoelectric Stress-Charge Format

Typical handbooks use the following:
T
σ[ 6 × 1 ] = –e[ 6 × 3 ] E[ 3 × 1 ]
where σ = stress vector and E = the electric field vector, shown in the following:
σ xx  
e 11 e 21 e 31
 
σ yy  e 12 e 22 e 32 
  Ex
σ zz
=  –  E
e 13 e 23 e 33
 y
M
σ yz  e 14 e 24 e 34  E
σ zx  e 15 e 25 e 35  z
 
σ xy  e 16 e 26 e 36 
The subscripts in CoventorWare are in order of xx, yy, zz, xy, zx, and yz. respectively. So the PZE stress matrix con-
vention followed in CoventorWare is
σ xx e x:xx e y:xx e z:xx

σ yy e x:yy e y:yy e z:yy
Ex
σ zz e x:zz e y:zz e z:zz
= – • Ey
σ xy e x:yz e y:yz e z:yz
Ez
σ zx e x:zx e y:zx e z:zx
σ yz e x:xy e y:xy e z:xy
where
e x:xx e y:xx e z:xx
e x:yy e y:yy e z:yy
T
e x:zz e y:zz e z:zz
e
= e x:yz e y:yz e z:yz =
εr
ε e x:zx e y:zx e z:zx
e x:xy e y:xy e z:xy
εr εr εr
ε xx ε yy ε zz
Thus, if the handbook has the PZE stress coupling matrix as

a g m
b h n
a b c d e f
[ e ] = g h i j k l aora [ e ] = c i o C/m2
T
d j p
m n o p q r
e k q
f l r
CoventorWare users should use
a g m
b h n
T
[e] = c i o aa
pC/µm2
f l r
e k q
d j p
Figure U3-12 illustrates how the individual entries in the Edit PiezoElectric-Stress dialog correspond to the stress
charge equations. Note that the Dielectric entries are diagonal of the permittivity matrix.
Figure U3-12 Stress-Charge Form Equations and Corresponding Entries in Material Database
 T
 σ[ 6 × 1 ] = C[ 6 × 6 ] ε[ 6 × 1 ] – e[ 6 × 3 ] E[ 3 × 1 ]

 D [ 3 × 1 ] = e [ 3 × 6 ] ε [ 6 × 1 ] + ε 0 ε rε [ 3 × 3 ] E [ 3 × 1 ]

Materials Imported from MEMS+

A material defined in MEMS+ with the Relative Permittivity property set to Isotropic and the Piezoelectric Coeffi-
cients property set to Strain Coefficients will be translated in CoventorWare to have non-isotropic Dielectric con-
stants within the Strain-Charge dialog in accordance with the equation shown in Figure U3-12.
If the original MEMS+ material had the Piezoelectric Coefficients property set to Strain Coefficients and the Relative
Permittivity property set to Anisotropic at a Constant Strain, the stress-charge\dielectric constants in CoventorWare
will not have the same numerical values as the relative permittivity specified in MEMS+; see page R1-18 of the
MEMS+ Compact Modeling Reference for more details.
3.2.9: Viscosity
This material property is applicable to fluidics problems. The Bingham, Power Law, Carreau, Casson, and Gener-
icViscosity options can be used to model non-Newtonian fluids.

3.2.10: Piezoresistive Coefficients

CoventorWare’s MemPZR module uses this material property in its computation of the change in resistivity of a
piezoresistive material subject to mechanical deformation. The piezoresistive phenomenon in semiconductors is
linked to a change in the resistivity in response to an applied stress. To represent this effect mathematically, we show
Ohm’s Law in the stress-free state:
E1 1 0 0 i1
E2 = ρ0 0 1 0 i2 (1)
E3 0 0 1 i3
M
where Ei, ii are the electric field and current density respectively parallel to the xi crystallographic axis, and ρ0 is the
stress-free resistivity, which may be tensorial in general.
When a stress field is applied, the resistivity is modified and becomes anisotropic. The change in resistivity is related
to the stress tensor through the empirically determined piezoresistive coefficient. For a general material, a total of 81
coefficients (similar to the elastic constants) will be needed. However, for crystals with cubic symmetry like silicon
and germanium, the number is drastically reduced to only three independent coefficients: π11, π12, and π44, which are
tabulated below for the widely used n-type and p-type silicon.
ρ0 (ohm⋅cm) π11(MPa -1) π12(MPa -1) π44 (MPa -1)

n-type 11.7 -102.2e-05 53.4e-05 -13.6e-05
p-type 7.8 6.6e-05 -1.1e-05 138.1e-05
It is important to note that these values are defined with respect to the principal crystallographic axes (<100>, <010>,
<001>) of the material. Therefore, to properly compute the change in resistivity in a numerical simulation, the model
must be oriented carefully so that the underlying wafer's flat and normal are correctly positioned with respect to the
global coordinate system of the solid model.
Two methods are provided for entering the piezoresistive material properties. Standard material property dialogs are
available for many commonly encountered cases. For MemMech and MemPZR users, a file-based method, described
in “Custom Properties File” on page U3-28, is available for more advanced cases. The standard dialog method is
described in this section.
The material types Constant_Scalar, Polynomial_T, and Table_T assume the crystallographic axes of the piezoresis-
tive material are aligned with the axes of the global system of reference, which corresponds to (100) wafer orienta-
tion.
The remaining types, Constant_Scalar100, Constant_Scalar110_Right, Constant_Scalar110_Left, and Constant_S-
calar111, refer to a specific orientation for the piezoresistive coefficients. The 100, 110. and 111 in these names refer
to the (100), (110), and (111) wafer orientations. By specifying the piezoresistive coefficients as one of these types,
CoventorWare will transform the tensor of coefficients to align one particular direction – <110>– with the global X-
axis for the (100), (110), and (111) wafer type, respectively.
In other words, these material properties correspond to a frame of reference with the X axis perpendicular to the pri-
mary flat for those types of wafers.
The change in resistivity matrix D (dR/R0) is given by the equation
2 3
D = π1 σ + π2 σ + π3 σ
The first term of the equation (π1σ) represents the linear piezoresistive coefficients and CoventorWare accounts for
these linear terms with the piezoresistive coefficients specified in the Edit Material dialog. The second term of equa-

tion (π2σ2) represents the second-order nonlinear piezoresistive coefficients, and CoventorWare accounts for
piezoresistive nonlinear coefficients using a custom file keyword; see page U3-33 for more details. Based on material
type and device orientation, some behaviors cannot be captured by second-order coefficients, see [2] for an in-depth
discussion.
For a cubic material, the linear contribution to change in the resistivity matrix, D, is computed as follows:
d xx π 11 π 12 π 12 0 0 0 σ xx
d yy π 12 π 11 π 12 0 0 0 σ yy
d zz π 12 π 12 π 11 0 0 0 σ zz (2)
=
d xz 0 0 0 π 44 0 0 σ xz
d yz 0 0 0 0 π 44 0 σ yz
d xy 0 0 0 0 0 π 44 σ xy
where σij are the stress tensor components (σxx, σyy, and σzz are normal stresses, while σxz, σyz, and σxy are shear
stresses).
For an orthotropic material, the linear contribution to change in the resistivity matrix, D, is computed as
d xx π 11 π 12 π 13 0 0 0 σ xx
d yy π 12 π 22 π 23 0 0 0 σ yy
d zz π 13 π 23 π 33 0 0 0 σ zz (2)
=
d xz 0 0 0 π 44 0 0 σ xz
d yz 0 0 0 0 π 55 0 σ yz
d xy 0 0 0 0 0 π 66 σ xy
and for a general, anisotropic material, the linear contribution to change in the resistivity matrix, D, is computed as
d xx π 11 π 12 π 13 π 14 π 15 π 16 σ xx
d yy π 21 π 22 π 23 π 24 π 25 π 26 σ yy
d zz π 31 π 32 π 33 π 34 π 35 π 36 σ zz (2)
=
d xz π 41 π 42 π 43 π 44 π 45 π 46 σ xz
d yz π 51 π 52 π 53 π 54 π 55 π 56 σ yz
d xy π 61 π 62 π 63 π 64 π 65 π 66 σ xy
Ohm’s Law is modified with the new resistivity matrix as follows:
E1 1 + d xx d xy d xz i1
E2 = ρ0 d xy 1 + d yy d yz i2 (3)
E3 d xz d yz 1 + d zz i 3

CoventorWare uses the Galerkin finite element method to solve Ohm’s Law. More specifically, the software solves
for the potential (voltage) as the unknown variable. The potential equation is derived as follows:
From (3) we write:
–1
I = S0 D[ 3 × 3 ] E (4)
where S0 = 1/ρ0 is the stress-free electrical conductivity, which in general may have a temperature dependence as
well as depth variation. Both effects can be modeled by CoventorWare.
Recalling that
E = – ∇V 1 (5)
M
and
∇ • I= 0 (6)
where equation (6) simply states that charge is conserved.

Using (5) and (6) we arrive at the potential equation solved by CoventorWare:
–1
– ∇ • ( S D [ 3 × 3 ] ∇V ) = 0 (7)
The boundary conditions associated with (7) are

 specified voltage
 specified current
 non-conducting surface (default)
 combination of the above
 links
3.2.11: Computing Poly-T Values

Several property types have a Poly-T option.These options use polynomials to define temperature-dependent proper-
ties using the following equation:
2 3 4 5
property = A 0 + A 1 T + A 2 T + A 3 T + A 4 T + A 5 T
3.2.12: Computing Table-T Values

When using the Table-T option, note the following:
 Each table has ten rows. If a row is not set, i.e. the temperature is left at 0, the software will ignore that row
and any row after it.
 Data must be entered with increasing temperature values.
The property value associated with each temperature value is determined by experiment or can be found in reference
handbooks.

3.2.13: Custom Properties File

The Custom Properties File is a text file that allows MemMech and MemPZR users to define more advanced forms
for some of the material properties described above. This file is selected using a standard file browser, and its name
must end with the .inp extension.
The file consists of one or more "keyword blocks." A keyword block begins with an "*" in the first column, followed
by a material property keyword. This keyword may be followed by a comma and additional comma-separated options
that provide information about the material property. Following this keyword line are one or more lines containing
the actual material property data. The data in the individual lines are separated by spaces. For example, consider a
definition for temperature-dependent, anisotropic elastic constants:
*elastic, type=anisotropic
345638.94,125520.875,345638.94,120444.48,120444.48,395914.425,0.0,0.0
0.0,110000.0,0.0,0.0,0.0,0.0,118136.585,0.0
0.0,0.0,0.0,0.0,118136.585,250
345611.34,125498.375,345611.34,120425.28,120425.28,395874.925,0.0,0.0
0.0,110000.0,0.0,0.0,0.0,0.0,118130.685,0.0
0.0,0.0,0.0,0.0,118130.685,251
345583.74,125475.875,345583.74,120406.08,120406.08,395835.425,0.0,0.0
0.0,110000.0,0.0,0.0,0.0,0.0,118124.785,0.0
0.0,0.0,0.0,0.0,118124.785,252
345556.14,125453.375,345556.14,120386.88,120386.88,395795.925,0.0,0.0
0.0,110000.0,0.0,0.0,0.0,0.0,118118.885,0.0
0.0,0.0,0.0,0.0,118118.885,253
Most of the material properties can be temperature dependent. In these cases, the temperature value at which the
property is valid is the last entry. As many lines as necessary to define the temperature may be entered but the tem-
peratures must be in order of increasing value. Property values at intermediate temperatures values are linearly inter-
polated. Property values for temperatures outside the input temperatures are assumed to be constant. If the properties
are independent of temperature, the user can omit the temperature value on the input line.
Additional syntax rules for keyword and data lines include
 A line can include no more than 256 characters, including spaces.
 Keywords and parameters are not case-sensitive.
 If a keyword line has to be continued to a second line, the last character of the first line should be a comma;
then the next line is interpreted as a continuation of the previous line.
 A value given in the form of a floating point number can occupy a maximum of twenty spaces, including the
sign, decimal point, and any exponential notation.
 An integer value can occupy a maximum of ten digits.
 Character strings can be up to 80 characters long and are not case sensitive.
 If a data line is continued to another line, a single data item cannot be entered over more than one line.
The available material property keyword blocks are defined in detail in the section that follows.

If a custom properties file is created on a Windows OS, but then executed on Linux OS, the simulation will fail
because the file has Windows characters (separators and returns) that are not correctly interpreted on Linux. In this
case, convert the file to Linux format or edit it directly in Linux, and then the simulation will run. Programs such as
Notepad++ have an EOL conversion function that will convert Windows style to Linux style.
*conductivity
This keyword block defines thermal conductivity for the material.
Options
type
M
Set type=iso (default) or type=ortho to define isotropic or orthotropic thermal conductivities, respectively.
Data lines to define isotropic thermal conductivity(type=iso):
k, temperature
Repeat this data line as often as necessary to define the thermal conductivity as a function of temperature.
Data lines to define orthotropic thermal conductivity(type=ortho):
kxx, kyy, kzz, temperature
Repeat this data line as often as necessary to define the thermal conductivity as a function of temperature.
*damping
This keyword block defines material damping.
Options
alpha
Defines the mass proportional damping coefficient. If left undefined, alpha=0.0.
beta
Defines the stiffness proportional damping coefficient. If left undefined, is beta=0.0.
There are no input lines associated with the *damping keyword block.
*dielectric
This keyword block defines the dielectric properties of the material. Note that from the Materials Editor dialog
accessed from within CoventorWare, the user has to enter dielectric values relative to the vacuum permittivity. But in
the custom properties file, the entries in the dielectric keyword block must be in absolute dielectric values in units of
pF/μm. For example, if the material is AIR, the dielectric values when entered through the Materials Editor would be
1.0, but when entered into the custom properties file the dielectric value would be 8.854e-6.
Note that for piezoelectric analysis, both the *dielectric and *piezoelectric keywords must be defined. See page U3-
32 for information on the *piezoelectric keyword.
Options
type
Set type=iso (default) or type=ortho to define isotropic or orthotropic dielectric properties, respectively.

Data lines to define the absolute dielectric constant for an isotropic material (type=iso)
ξ, temperature
Repeat this line as often as necessary to define the dielectric constant as a function of temperature.
Data lines to define the absolute dielectric constants for an orthotropic material (type=ortho)
ξxx, ξyy, ξzz, temperature
Repeat this line as often as necessary to define the dielectric constants as a function of temperature.
Repeat this line as often as necessary to define the dielectric constants as a function of temperature.
*elastic
This keyword block defines linear elastic moduli for the material.
Options
type
type=isotropic: defines isotropic elastic behavior (Default)
type=engineering constants: defines orthotropic behavior in terms of the 3-dimensional elastic moduli,
Poisson’s ratios, and shear moduli.
type=orthotropic: defines orthotropic behavior in terms of the elastic stiffness coefficients.
type=anisotropic: defines fully anisotropic behavior in terms of the stiffness coefficients.
Data lines to define isotropic elasticity(type=isotropic):
First line:
E, u, temperature
Repeat this data line as often as necessary to define elasticity as a function of temperature.
Data lines to define orthotropic elasticity in terms of moduli(type=engineering constants):
First line:
Ex, Ey, Ez, υxy, υxz, υyz, Gxy, Gxz
Second line:
Gyz, temperature
Repeat this set of data lines as often as necessary to define elasticity as a function of temperature.
Data lines to define orthotropic elasticity in terms of coefficients(type=orthotropic):
First line:
Dxxxx, Dxxyy, Dyyyy, Dxxzz, Dyyzz, Dzzzz, Dxyxy, Dxzxz
Second line:
Dyzyz, temperature
Data lines to define anistropic elasticity(type=anisotropic):
First line:
Dxxxx, Dxxyy, Dyyyy, Dxxzz, Dyyzz, Dzzzz, Dxxxy, Dyyxy

Second line:
Dzzxy, Dxyxy, Dxxxz, Dyyxz, Dzzxz, Dxyxz, Dxzxz, Dxxyz
Third line:
Dyyyz, Dzzyz, Dxyyz, Dxzyz, Dyzyz, temperature
*electrical conductivity
This keyword block defines the electrical conductivity coefficients.
Options
M
type
Set type=iso (default), type=ortho, or type=aniso to define isotropic, orthotropic, or anisotropic electrical
conductivities, respectively.
Data lines to define isotropic electrical conductivity(type=iso):
First line:
σ, temperature
Repeat this data line as often as necessary to define the electrical conductivity as a function of temperature.
Data lines to define orthotropic electrical conductivity(type=ortho):
First line:
σxx, σyy, σzz, temperature
Data lines to define anistropic electrical conductivity(type=aniso):
First line:
σxx, σxy, σxz, σyy, σyz, σzz, temperature
*expansion
This keyword block defines the thermal expansion coefficients for the material.
Options
type
Set type=iso (default) or type=ortho to define isotropic or orthotropic thermal expansion, respectively.
Data lines to define isotropic thermal expansion(type=iso):
First line:
α, temperature
Repeat this data line as often as necessary to define the thermal expansion as a function of temperature.
Data lines to define orthotropic thermal expansion(type=ortho):
First line:
αx, αy, αz, temperature

Repeat this data line as often as necessary to define the thermal expansion as a function of temperature.
*joule heat fraction

This keyword block defines the fraction of electrical energy converted to heat. There are no options associated with
this keyword block.
First (and only) line:
Value of fraction of electrical energy converted into heat
The default value is 1.0.
*piezoelectric
This keyword block defines the piezoelectric coefficients for the material. If this keyword block is included in the
custom properties file for a material, the *dielectric keyword block (see page U3-29), must also be included.
Options
type
Set type=s (default), to specify stress material coefficients for the piezoelectric property. Set type=e to specify
strain material coefficients for the piezoelectric property.
Data lines to the piezoelectric stress coefficient matrix (type=s):
First line:
ex,xx, ex,yy, ex,zz, ex,xy, ex,xz, ex,yz, ey,xx, ey,yy
Second line:
ey,zz, ey,xy, ey,xz, ey,yz, ez,xx, ez,yy ez,zz, ez,xy
Third line:
ez,xz, ez,yz, temperature
Repeat this set of data lines as often as necessary to define piezoelectric properties as a function of temperature.
Data lines to the piezoelectric strain coefficient matrix (type=e):
First line:
dx,xx, dx,yy, dx,zz, dx,xy, dx,xz, dx,yz, dy,xx, dy,yy
Second line:
dy,zz, dy,xy, dy,xz, dy,yz, dz,xx, dz,yy, dz,zz, dz,xy
Third line:
dz,xz, dz,yz, temperature
For the shear components, these coefficients relate the engineering components, not the tensor shear strain compo-
nents, to the electric field vector.

*piezoresistive
This keyword block defines the piezoresistive coefficients for the material. The keyword has these options:
*piezoresistive, type {,orientation=__MY_ORIENTATION__}
where the arguments in {} are optional.
If you want to define piezoresistivity as a function of temperature, add the temperature value {T}, and define one
coefficient line per temperature. For example:
0.0, 0.2e-4, 11.9e-4, -0.2e-7, 0.4e-7,-0.8e-7, 0.2e-7, -3.3e-7, 9.3e-7, -2.1e-7, -1.5e-7, -.15e-7 {T}
Below is an example of a piezoresistive material with nonlinear coefficients and the wafer orientation defined as
Wafer 110, left:
*piezoresistive, type=cubic-nonlinear, orientation=wafer_110_left
M
0.0e-4, 0.1e-4, 10.5e-4, -0.1e-7, 0.2e-7, -0.4e-7, 0.1e-7, -1.5e-7, 6.3e-7, -1.1e-7, -1.0e-7, -.05e-7, 270
0.0e-4, 0.2e-4, 11.9e-4, -0.2e-7, 0.4e-7, -0.8e-7, 0.2e-7, -3.3e-7, 9.3e-7, -2.1e-7, -1.5e-7, -.15e-7, 300
0.1e-4, 0.3e-4, 14.9e-4, -0.3e-7, 0.5e-7, -1.1e-7, 0.3e-7, -4.3e-7, 12.3e-7, -2.5e-7, -2.5e-7, -.2e-7, 320
Options
type
Set type=cubic (default), type=cubic-nonlinear, type=ortho, or type=aniso to define isotropic,

isotropic nonlinear, orthotropic, or anisotropic piezoresistive coefficients, respectively.
orientation
Set orientation=wafer_100, wafer_110_right, wafer_110_left, or wafer_111 to specify that the
input properties should be rotated to match the appropriate wafer orientation. The input properties are defined in the
material reference frame.
Data lines to the piezoreistive coefficient matrix (type=cubic):
First Line:
π11, π12, π44, temperature
Repeat this data line as often as necessary to define the piezoelectric coefficients as a function of temperature.
Data lines to the piezoreistive coefficient matrix (type=cubic-nonlinear):
π11, π12, π44, π111, π112, π122, π123, π144, π166, π616, π414, π456, temperature
Repeat this data line as often as necessary to define the piezoelectric coefficients as a function of temperature.
Data lines to the piezoreistive coefficient matrix (type=ortho):
First Line:
π11, π12, π22, π13, π23, π33, π44, π55,
Second Line:
π66, temperature
Repeat these data lines as often as necessary to define the piezoelectric coefficients as a function of temperature.
Data lines to the piezoreistive coefficient matrix (type=aniso):
First Line:
π11, π12, π13, π14, π15, π16, π21, π22
Second Line:
π23, π24, π25, π26, π31, π32, π33, π34

Third Line:
π35, π36, π41, π42, π43, π44, π45, π46
Fourth Line:
π51, π52, π53, π54, π55, π56, π61, π62
Fifth Line:
π63, π64, π65, π66, temperature
Repeat these data lines as often as necessary to define the piezoelectric coefficients as a function of temperature.
*specific heat
This keyword block defines the specific heat for the material. There are no options associated with this keyword
block.
Data lines to specify a material’s specific heat:
First line:
Value of specific heat per unit mass, temperature
Repeat this data line as often as necessary to define the specific heat as a function of temperature.
3.3: References
1 Hopcroft, M. A., Nix, W. D., and Kenny, T.W., "What is the Young’s Modulus of Silicon?," Journal of Micro-
electromechanical Systems, April 2010, Vol. 12, No. 2, pp. 229-238.
2 Kanda, Y., Matsuda, K., Suzuki, K., and Yamamura, K., "Nonlinear piezoresistance effects in silicon," Journal of
Applied Physics 73, 1838 (1993); doi: 10.1063/1.353169.

Section 4: The Process Editor Version 10.3
Section 4: The Process Editor
The Process Editor allows users to create a flow simulating the foundry process that will fabricate the MEMS design.
Materials, layer names, mask names, actions (deposit or etch), thickness or etch depth, photoresist and more are
defined in a series of steps. The choice of materials selected in the process flow is dependent on the material proper-
ties database that is active in the Solid Model Builder dialog.
The Process Editor is very tolerant; that is, it will not object to data that is unrealistic or that violates foundry
specifications.
M
To access the Process Editor, click on the icon to the right of the Process field in the Console’s Solid Model Builder.
If a Process Editor file is selected in the Process field, it is displayed. Otherwise, an initial default window opens with
a default layer, but no other process steps defined.
Figure U4-1 Process Editor Components
Process Library
Process
description
Step
parameters

4.1: Components
The Process Editor has three components: the Process Library, the Process Description, and the Step Parameters.
4.1.1: Process Library

The Process Library pane is common to all process files, and uses a tree view to show the CoventorWare process
steps, foundry process steps, and any user-defined process steps.
The Process Library has these folders:
 Modeling Actions: This folder contains generic solid modeling actions, including Conformal Shell, Delete,
Partition, Planar Fill, Round Corners, Stack Material, and Straight Cut.
 User-Defined Steps: This folder contains predefined process steps, as well as user-defined process steps. Its
contents is determined by the process file designated as the default Process Library from the Tools > Options
dialog (see page U4-35).
 Foundry Processes: This folder contains several sequence steps that are recognized foundry processes,
including DALSA, Polysilicon from IMEPKU, MetalMUMPS, PolyMUMPS, SoiMUMPS, Imec, SINTEF,
and Tronics SOI-HARM. See page U4-32 for more details.
The contents of the Process Library is determined by the file selected from the Tools > Options > Default Process
Library field (see page U4-35). The steps are sorted alphabetically.
Steps from the library can be added to the Process Description window by double clicking on the step or by right-
clicking and selecting one of these options: Insert Above Current Step, Insert Below Current Step, or Insert After Last
Step. If the user double clicks on a step, it is added after the last step.
Once a step has been added to a process, the user can edit it by clicking on it in the Process Description pane so that
its properties are displayed in the Step Parameters pane.
4.1.2: Process Description

The Process Description pane provides a spreadsheet-style view of the process steps in the current process file,
including step number, step name, layer name, action, material, layer thickness, and more. Each process step is dis-
played in its own row. The user can configure the columns displayed by selecting View > Columns.
A process step may be a sequence step, meaning that it is comprised of several substeps. Step 4 in Figure U4-2 is a
sequence step. Sequence steps can be expanded by clicking on the "+" sign to show the steps contained within.
Figure U4-2 Process with a Sequence
Step parameters cannot be edited from the Process Description pane. Parameters are edited from the Step Parameters
pane, which becomes active when the user clicks on a non-sequence step.
4.1.3: Step Parameters

The Step Parameters pane gives the user access to the parameters of a selected step: when the user highlights a step in
the Process Description pane, the Step Parameters pane displays that step’s parameters. The parameters displayed
depend on what kind of step has been selected; see the sections immediately following this one for details.If a
sequence is selected, only its name will appear as an editable field.

4.2: Substrate Step

A Substrate step is used to define the parameters of the wafer. By default the Substrate step is the first step in a pro-
cess, and it is inserted whenever a new process is created. In CoventorWare 10.0, there can only be one substrate.
To edit the Substrate parameters, select its step in the Process Description pane, and use the fields in the Step Param-
eters pane. The Substrate step parameters are shown below:
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 Step Name
This field allows the user to assign a unique name to each step.
 Layer Name
The name entered in this field determines the layer name that appears in the Preprocessor solid model.
 Mask
Clicking on this field opens a drop-down menu with any available mask names from an active layout file. The
user can also enter a name in this field. Mask names are case-sensitive and must be unique.
 Bounding Box
This field can be used to define the dimensions of the substrate (in microns) if there is no mask to define it. The
user enters two sets of XY coordinates to define boundaries of the substrate.
Whether defined with a mask or with a bounding box, the substrate must be rectangular.
 Thickness
Specifies the deposit thickness in microns. The thickness must be positive and must be a floating number.
 Material
Clicking on this field opens a drop-down menu of available materials from the material database specified in the
Solid Model Builder dialog.
 Display Color
Colors are used consistently through the process. Deposit colors will appear in the Preprocessor and postproces-
sor with the associated parts. Ten default colors are listed in the drop-down menu, but there is a More Colors
option that, when selected, opens a color selection dialog.
 Comments
This field allows the user to add information pertaining to the step.

4.3: Modeling Actions

The Modeling Actions folder includes generic process actions that users can customize to fit the needs of their spe-
cific process. There are seven generic modeling actions: Conformal Shell, Delete, Partition, Planar Fill, Round Cor-
ners, Stack Material, and Straight Cut. The Conformal Shell, Planar Fill, and Stack Material are deposit actions;
Partition and Round Corners are utility steps; Straight Cut is an etch action, and Delete is a release or sacrificial
action. Each of these actions is explained in detail below.
4.3.1: Deposit Parameters

There are three types of deposits: Conformal Shell, Planar Fill, and Stack Material. The user can select one of these
types of deposits from the Modeling Actions folder or can select a user-defined step that uses one of these deposits.
The Step Parameter fields will vary according to which type of deposit is selected. The Planar Fill and Stack Material
deposits have the same parameter fields. The Conformal Shell deposit has some unique parameters.
Planar Fill and Stack Material

Figure U4-3 shows the Step Parameters pane as it appears when a Planar Fill or Stack Material modeling action is
selected. These modeling actions have the same parameters even though they create different geometries.
Figure U4-3 Planar Fill and Stack Material Parameters
 Step Name
 Layer Name
 Material
 Front Side/Back Side

These settings determine if the deposit is performed on the front or back side of the wafer. One or both options
can be selected.

 Thickness
Specifies the deposit thickness in microns; this value must be a positive floating number. For Planar deposits, the
thickness value determines the layer thickness in reference to the highest point in the Z-direction; a value of 0 is
allowed for planar deposits.
For more information on planar, stacked, and conformal deposits, see page U4-37.
 Display Color
Sets the display color of the deposit material. Colors are used consistently through the process. Deposit colors
will appear in the Preprocessor and Visualizer with the associated parts. Ten default colors are listed in the drop-
down menu, but there is a More Colors option that, when selected, opens a color selection dialog.
 Comments
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Conformal Shell
The Conformal Shell modeling action has the same fields as the Planar Fill and Stack deposits, but it has additional
options to define rounded corners and surface conformality.
Figure U4-4 Conformal Shell Deposit Parameters
 Step Name
 Layer Name
 Material

These settings determine if the deposit is performed on the front or back side of the wafer. One or both options
can be selected.
 Round Corners
This option rounds the sharp corners of a deposit. Corner and edge definitions are illustrated in Figure U4-5. The
drop-down menu choices for Round Corners are

 All: This option rounds all convex and concave corners.

 Only Concave Corners: This option rounds only the concave corners.
 Only Convex Corners: This option rounds only the convex corners.
 Only Convex x-y Corners: This option rounds only the convex corners in the horizontal (x-y) plane.
 Only x-y Corners: This option only rounds the horizontal corners (the corners in the x-y plane).
Figure U4-5 Corner and Edge Definitions
The following figures demonstrate the effect rounding corners have on a model. Figure U4-6 shows a model in which
a material was deposited conformally without rounding the corners.
Figure U4-6 Model with No Corners Rounded
The model shown in Figure U4-7 was generated with the Round Corners option set to All.

Figure U4-7 Model with All Corners Rounded
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In Figure U4-8 the model on the left was generated with the Round Corners option set to Only Concave Corners. The
model on the right was generated with the Round Corners option set to Only Convex Corners. Not the difference
around the edges of the circular and square objects.
Figure U4-8 Rounding Concave vs Convex Corners

Only Concave Corners Only Convex Corners
In Figure U4-9, the model on the left was generated with the Round Corners option set to Only Convex x-y Corners.
The model on the right was generated with the Round Corners option set to Only x-y corners. Note that in both mod-
els, the vertical corners of the square object are left untouched.
Figure U4-9 Rounding Corners in X-Y Plane

Convex x-y plane only x-y plane only
For models that fail to build with all the specified corners rounded, Coventor provides an environment variable that
can be set to use other rounding algorithms. See page U4-9 for more details.

 Convex/Concave Corners Radius

This option allows the user to set the radius of the rounding corner operation. If the corner is convex, the Convex
Corner Radius setting determines how much material is removed as the corner is rounded. The larger the setting,
the more material is removed. If the corner is concave, the Concave Corner Radius setting determines how much
material is added as the corner is rounded. The larger the setting, the more material is deposited. Figure U4-10
illustrates how the radius settings work:
Figure U4-10 Effect of Radius Settings on Convex and Concave Corners
The thicker black line represents the conformal deposit layer without rounding. Rounding a corner is like rolling
a ball that is tangent with the two faces of the corner. So the radius is a perpendicular line from the tangent point
respectively. The intersection point is the center of the rolling ball and the starting point for measuring the radius.
Figure U4-11 Radius Definition
The default setting for both Radius values is the Thickness Nominal Value (see below). The Radius values must
be greater than zero.
 Thickness
Specifies the deposit thickness in microns. For Conformal deposits, the thickness must be positive, and the value
must be a floating number.
 Display Color
Sets the display color of the deposit material. Colors are used consistently through the process. Deposit colors
will appear in the Preprocessor and Visualizer with the associated parts. Ten default colors are listed in the drop-
down menu, but there is a More Colors option that, when selected, opens a color selection dialog.
 Surface Conformality Factor (SCF)

Sets the relative thickness of the sidewalls of the deposit compared to the thickness of the horizontal part of the
deposit.

With curved surfaces only a Surface Conformality Factor of 1 can be used.
To model snowfall deposits, set the SCF to 0.
 Comments
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Alternate Algorithms for Rounding Corners
The basic algorithm used in rounding corners first offsets the model with the deposit thickness, and then collects all
the eligible edges and rounds them at one time using the user-specified convex and concave radii. If the model con-
tains small features, especially very shallow steps, then the solid modeler may fail where the vertical edge is shorter
than the rounding radius. If the solid modeler fails on rounding any edge, the remaining edges are not rounded.
If the solid modeler fails to round eligible corners in a model, the user can set an environment variable that will use an
alternate algorithm. The environment variable is called AB_ROUNDED_CONFORMAL_ALG, and can have a
value of 1, 2, 3, or 4.
For information on how to set an environment variable, see page U1-43.
Algorithm 1 is the default algorithm; it is the same algorithm used when the environment variable is not set. This
method is the most flexible. The convex and concave edges can be rounded with different radii, and the user can
choose the round all edges or only the horizontal edges. This algorithm works well on models with curved edges. But
as noted above, it may fail on models with small features.
With Algorithm 2, the eligible edges are rounded one at a time. Unlike Algorithm 1, which will stop rounding edges
if one edge cannot be rounded, Algorithm 2 skips edges that cannot be rounded and continues to round the other eli-
gible edges. It handles models with shallow step geometries very well. However, it cannot round vertical edges and is
not suitable for models with curved edges. Figure U4-12 shows a model created with Algorithm 2.
Figure U4-12 Model Created with Algorithm 2

Original Rounded Model
Like Algorithm 2, Algorithm 3 rounds corner incrementally, but instead of rounding edges one at a time, it rounds all
the edges on one face at a time. This algorithm handles models with small features and curved edges, as shown in
Figure U4-13. The curved edges have to be rounded with their adjacent edges; otherwise, undesired geometry will be
created. Vertical edges are not rounded.

Note that if the user sets the environment variable to Algorithm 2 and the model has curved edges, the solid model
will automatically invoke Algorithm 3.
Algorithm 4 rounds the model using a tiny radius before offsetting the model with the deposit thickness. After the off-
set, the convex edges are rounded naturally. Therefore, the rounding radius is always equal to the deposit thickness.
The convex radius value set in the Process Editor step is not used. Concave edges are still rounded according to the
specified concave radius. This algorithm is intended to be generic enough to be used on most models with small fea-
tures, but users should exercise caution because after the offset operation, it might create a model with self-intersec-
tions.

The algorithms available with the AB_ROUNDED_CONFORMAL_ALG variable are summarized below:
Model Geometry Algorithm to Use
Most models, no small features 1 (default)
Models with small features, no curved edges 2
Models with small features and curved edges 3
Most models with small features, but result may contain

4
self-intersections. Use with caution.

4.3.2: Partition
The Partition step can be used to automate model partitioning (e.g. separate tether from proof mass to allow more
efficient meshing). This step can save users a lot of time, especially when they repeatedly modify a layout, build a 3-
D model and perform some analyses. Note that unlike the Straight Cut step, the Partition step does not remove mate-
rial; it uses the specified mask to split the selected layer into two separate layers. If multiple layers are selected, each
layer will be split into two layers.
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 Step Name
 Layers
Allows the user to select the layers that will be partitioned. Clicking on Edit opens a dialog that lists all the lay-
ers that were used in the preceding steps. Layers added to the right pane of the dialog will be partitioned.
 Mask
Allow the user to specify the mask to be used for partitioning. The drop-down menu includes masks used in the
preceding steps. The user can also enter the name of a mask.
 Sidewall Angles (degrees)

This setting allows the user to partition the specified layers at an angle. The actual slope of the partition is deter-
mined by the Draft angle and the antisymmetric increments set for the X and Y faces. This settings are explained
in detail on page U4-18. Note that the Draft angle is equivalent to a Scalar sidewall angle distribution.
Note that when partitioned layers are added to the Mesh Model folder, touching layers are merged into one region.
To maintain partitioned layers in different regions so that you can apply different meshing algorithms, make sure to
uncheck the Automatically merge touching layers under the Mesh menu. For more information, see page U5-45.
Example
The example below shows how to use the Partition step to separate the proof mass of a gyroscope from the tethers
and the comb fingers. The proof mass of this gyro consists of a square plate perforated with many release holes, and
it has comb fingers along two sides. This combination causes difficulties because the comb finger placement relative
to the hole placement causes high aspect ratio elements for any but an extremely fine (large number of small ele-
ments) mesh. And because most of the deflection occurs in the tethers, a finer mesh is needed to accurately capture
that deflection. By partitioning the model, we can apply a finer mesh to the comb fingers and the tethers.

Figure U4-15 Partition Example
Poly layer is partitioned

into two layers:one for
proof mass and one for
comb fingers and tethers
For another example of how to use the Partition step, see the section beginning on page T3-14 of the MEMS Design
and Analysis Tutorials.

4.3.3: Round Corners

The Round Corners modeling action can be used to round the convex corners of exposed surfaces in the model. A
material or layer surface is considered exposed if it does not come in contact with another material or layer.
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Figure U4-16 illustrates the criteria for rounding corners. For this illustration the round corner operation will be spec-
ified for material A only. Corners 2 and 4 are convex corners not in contact with any other material, so they are eligi-
ble for rounding. When considering only material A, corners 1, 5, and 6 are convex corners, but they are in contact
with other materials (material B and the substrate) and form concave corners with those materials. Corner 3 is a con-
cave corner, so it would not be rounded.
Figure U4-16 Criteria for Rounding Corners
 Round Convex Corners

The drop-down menu for this field has two options: All, which rounds all the convex corners in the model, and
Only x-y corners, which rounds only those convex corners in the x-y plane. Figure U4-17 shows the same model
created without rounding the corners, created with rounding all corners, and created with rounding only the x-y
corners.

Figure U4-17 Rounded Corners Example

No corners rounded
All corners rounded Only x-y corners rounded
The Round Corners option can be used to create a sphere. See page U2-10 for more details.
 Radius
The Radius option allows the user to determine how far the rounding corner operation will go into the layer or
material to create the rounded corner. The value must be greater than zero, and there is no default value. The
larger the radius, the more material is removed. See Figure U4-10 on page U4-8 for more explanation of this set-
ting.
 Layer(s)/Material(s)
The user can also choose to round corners by selecting either the Layer(s) option or the Material(s) option. To
select only one layer or material, the user can use the option’s drop-down menu. To select more than one layer or
material, the user must click on Edit to access the Selection dialog. Note that only the layers or materials added
to the right pane of the dialog will be acted on by the rounded corners operation. Even if a layer or material is
selected, if it is not exposed, its corners will not be rounded.

Layers or Materials added to the right pane will be acted on
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4.3.4: Straight Cut Etch Parameters
Figure U4-18 shows the parameters displayed when Straight Cut modeling step is selected. With the Straight Cut
step, the user has the option to etch by layer, by depth, or by material. After specifying one of these options, the etch
is then assigned a mask, a photoresist, and other specifications. The settings are detailed below.
Figure U4-18 Straight Cut Step Parameters
 Step Name
 Cut Last Layer Completely

This option etches through the last layer completely and uniformly.
 By Depth
This option etches the material(s) by a particular depth. Note that if the material to be etched was a planar or
stacked deposit, it will be etched uniformly. But if the material was a conformal deposit, the etch will not remove
the material uniformly from all surfaces of the deposit. The Global and Local Topology settings, explained
below, determine how the layer is etched.

 Etch Shape Based on:

 Global Topology: The etch starts from the top-most point and etches the distance specified by the user.
Surfaces that are below the distance specified will not be etched.
 Local Topology: The etch removes the material in the Z direction from the exposed surfaces regardless
of the surface height.
Figure U4-19 shows how the Global and Local Topology settings affect an etch by depth step on a conformal
deposit. If set to Global, the etching algorithm starts from the top-most point of the deposit, etches down by the
depth specified, and then stops. The Global topology etch volume is a rectangle, as shown by the blue box in the
Figure U4-19A. The result of the etch is shown in Figure U4-19C. If set to Local, the etching algorithm removes
material in the Z direction from the exposed surface regardless of the surface height. As Figure U4-19B shows,
the volume to be etched is not a rectangle. It is comprised of the shape of the exposed surface. The result of the
Local topology etch is shown in Figure U4-19D.
Figure U4-19 Global vs. Local Topology
 Filter Materials: Allows the user to include or exclude materials from the Etch by Depth operation.
The Filter Materials pane will list all materials included in the process prior to that etch step. The user
can select the Include or Exclude option, and then use the Add button to move the materials to include
or exclude to the right pane. By default, Exclude is selected and the right pane is empty, which means
that all materials will be included in the Etch By Depth operation.
 By Layer(s)
This option allows the user to etch by specifying a layer or layers. After this option is selected, clicking on Edit
opens a dialog that allows the user to select the layers to be etched. The dialog will only show those layers that

have been added to the process prior to this etch step. Only those layers moved to the pane to the right of the Add
and Remove buttons will be etched.
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 By Material(s)
This option allows the user to specify an etch by material(s). After this option is selected, clicking on Edit opens
a dialog that allows the user to select the materials to be etched. The dialog lists only materials previously speci-
fied in the current process. The user can select the Include or Exclude option, and then use the Add button to
move the materials to include or exclude to the right pane. By default, Include is selected and the right pane is
empty, which means that all materials will be included in the Etch By Depth operation. Note that if the material
is selected to be etched and appears in more than one step, all the steps that use that material will be etched.

These settings determine if the etch is performed on the front or back side of the wafer. One or both options can
be selected.
When the model has a perforated substrate, deposit material will go to the opposite side of the wafer. But the
criterion for removing material with a subsequent etch is based on the Front Side/Back Side setting for the deposit.
For example, if material was deposited on the front side of the wafer, and because of perforations, ended up on the
back side of the wafer, a subsequent etch of that deposit from the front side would etch the material from the front
and back because that material is considered a a front side deposit. But if a back side etch was selected, none of the
material would be removed because that material is considered a front side deposit and only materials deposited on
the back side would be etched.
 Mask
Clicking on this field opens a drop-down menu with any available mask names from an active layout file. The
user can also enter a name in this field. Mask names are case-sensitive and must be unique.
 Photoresist
Determines if a shape defined by a mask is retained (+) or etched away (-).

 Sidewall Angle
This option can be a positive or negative floating number between -90 and 90.
 Antisymmetric Increments: These settings can be used in conjunction with the Nominal Value to emulate
sidewall angles that are not uniform. For example, when the die is not in the middle of a wafer, and the light
source of the lithography is in the middle of the wafer, then the die sidewall angles would be anti-symmetric.
The tilt angle of each face would be a combination of the scalar angle and the anti-symmetric increments
specified for the X and/or Y faces.
When a sidewall angle is specified, it is the angle of the sidewall with the Z axis when the direction vector is
straight down. When no antisymmetric increments are specified, this sidewall angle is applied uniformly to
every face.
In order to be consistent with the convention of specifying dies, we select the Cartesian coordinate system to
define the direction vector.
The direction vector can be decomposed into two angles as shown below. The increment angle of X/Y is the
sidewall angle measured on faces facing X or Y in the center of the die, without draft angle applied. So, when
the draft angle is zero, the etch is the parallel sidewall angle etch.
From the mathematical perspective, the direction vector is the vector from the light source to the die center.
The X/Y increment angle is the projection angle of this vector on XZ plane and YZ plane respectively.
The Anti-Symmetric Increment values have to be between -90 and 90. The sum of the absolute value of the
scalar sidewall angle and the absolute value of the X/Y increment angle should be less than 90.
 Offset
Used to increase or decrease the area of the mask material in the positive or negative XY plane. This value can be
a positive or negative floating number.
To apply offsets specified in the Process Editor to a solid model, make sure to check Apply Offset Values on the
Designer tab.
 Comments

4.3.5: Delete Parameters

This modeling step allows the user to delete material by specifying that material or by specifying a layer.
Note that multiple delete steps are allowed in CoventorWare 10.0.
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 Step Name
This field allows the user to assign a unique name to the step.
 Material
If this option is selected, the user specifies the material to be deleted. The drop-down menu for this field includes
only materials specified for the current process. Note that if the material appears in more than one step, all the
steps that use that material will be deleted.
 Layer
If this option is selected, the user specifies a layer for which the material will be deleted. The drop-down menu
for this field includes only layers specified for the current process.
 Comments

4.4: User-Defined Step Definitions

This section details the process steps that appear with the default process library installed with CoventorWare. This
default library is determined by the Tools > Options > Process Library setting (see page U4-35).
This default process library is a library of solid modeling steps. Each step or sequence of steps maps to a MEMS pro-
cess. The purpose of this library is to show the user how to map a process onto a 3-D solid model. The library steps
are only suggestions that show how to emulate realistic process steps with solid modeling primitives; they are not
designed to emulate exactly the geometries of a real MEMS process.To attain such level of detail, it is best to use
SEMulator3D, distributed by Coventor, Inc., which builds a virtual prototype based on 3-D voxels. A solid model can
then be exported from SEMulator3D in SAT or STL format.
The default library is intended to be a starting point; the user can build a customized library by adding more steps and
sequences.
The order of process steps in the CoventorWare process modeling files does not necessarily represent the exact
order in the physical fabrication process.
4.4.1: Etch Steps

Anisotropic Wet Etch, Frontside, Backside
Anistropic wet etch using KOH or TMAH is a bulk silicon etch whose etch rate is very dependent on the orientation
of the silicon's crystal planes. For example, {111} crystal silicon planes etch significantly slower than {100} planes.
This makes it possible to create specific geometries difficult to produce with other micromachining techniques. The
most characteristic feature of anistropically etched structures on {100} silicon wafers are cavities or V-grooves that
are bounded by {111} planes and intersect under an angle of 54.7° (90°-35.3°) with the {100} plane of the top sur-
face. This process modeling step does not account for all possible geometries, but emulates the etching result of rect-
angular mask aligned parallel to the <100> direction, which is a cavity bounded by inclined crystal silicon {111}
planes.
The etch can be applied to the frontside or backside of the wafer. The sidewall angle is predefined with -35.3° to rep-
resent a characteristic etch angle for crystal silicon, as illustrated below:
Despite the high anisotropy of KOH wet etching, usually the mask is still undercut by a few percentage of the total
etch depth. This mask undercut can be considered using the Offset parameter. Etch stops can be considered by adding
an additional layer to represent the etch stop layer, and using the Cut Last Layer Completely option to remove the
crystal silicon until the etch stop layer. Alternatively, the Depth option can be used to define a certain etch depth.
The default setting for the photoresist is positive ("+"). For information on photoresist settings, see page U4-44.

Figure U4-20 Sample Setup for Anisotropic Wet Etch - Backside
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When using a positive polarity for a layout layer and a dark field mask, the user should draw areas where the photore-
sist will be removed; e.g. defining the etch opening for the cavity to be etched.
Figure U4-21 Layout for Anisotropic Etch

Figure U4-22 Result of Anisotropic Wet Etch - Backside
The Anisotropic Wet Etch uses a Straight Cut modeling action. For information on this modeling action and its
parameters, see page U4-15.
Generic Wet Etch

This step represents a generic wet etch in which the rate of material removal does not depend on the orientation of the
substrate. Provided there is a sufficient supply of reactants, lateral etching occurs at about the same rate as vertical
etching, resulting in an undercut of the mask. This undercut can be modeled using the Offset parameter. Typically, the
sidewall is tapered and curved. Tapering can be adjusted with the Sidewall Angle parameter. Curved sidewalls and
isotropic etching are not supported with the current modeling step.
When etching single-crystal silicon with certain etchants, such as KOH, orientation-depending etching can occur.
Refer to the Anisotropic Wet Etch description above.
The Generic Wet Etch step uses a Straight Cut modeling action. For information on its parameters, see page U4-15.
Generic Dry Etch

This step represents a generic dry etch that removes material using dry etchants such as chemically reactive vapors or
reactive species in plasmas.
The shape of plasma-etched features is usually a strong function of the etching conditions, and the settings of the
plasma parameters are critical to achieve the desired result. The undercut can be modeled using the Offset parameter.
Typically, the sidewall is tapered and curved. Tapering can be adjusted with the Sidewall Angle parameter. Curved
sidewalls and isotropic etching are not supported with the current modeling step.
The Generic Dry Etch step uses a Straight Cut modeling action. For information on its parameters, see page U4-15.

Deep Reactive Ion Etch (DRIE)

Deep reactive ion etching (DRIE) is used to etch deep cavities in substrates with relatively high aspect ratios. Most
systems utilize the so-called "Bosch process," in which a fluoropolymer is used to passivate the etching of the side-
walls. The sidewalls are usually not significantly etched (small Offset value); thus, nearly vertical sidewall features
can be produced (sidewall angle is approximately 0°). Typical aspect ratios of 10-20 can be achieved.
At higher magnification, a slight scalloping of the walls corresponding to the alternation between etching and passiv-
ation can be observed. The DRIE step uses a Straight Cut modeling action, which does not consider this effect.
For information on Straight Cut and its parameters, see page U4-15.
Release Dry Etch and Release Wet Etch
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These etch steps completely remove the sacrificial layer, leaving the freestanding structural material attached to the
underlying fixed layer. The etchant used to release the structure should etch the sacrificial layer quickly and the
remaining layers not at all or very slowly. Dry or wet etchants can be employed for the sacrificial layer etch. The user
can choose either the material or the layer that determines the sacrificial layer. Partial etch, removing part of the layer
material, is not supported.
These release steps use the Delete modeling action. For more information on this action and its parameters, see page
U4-19.
Stripping
This etch step is used to completely remove a layer of material. Most often it is used for photoresist removal after pat-
tern transfer to the substrate.
These release steps use the Delete modeling action. For more information on this action and its parameters, see page
U4-19.
4.4.2: Deposition Steps

Thermal Oxidation
To grow a thermal oxide on a silicon wafer, the substrate is placed in a high-temperature furnace in which oxygen or
water vapor is introduced. At elevated temperatures the oxygen will diffuse into the substrate at a high rate, causing
an oxidation of the material. It is possible to speed up the process further by operating at elevated furnace pressures.
In dry oxidation, pure oxygen is used as an oxidant. It is typically used when the highest-quality oxide is needed, such
as for the thin gate oxide of MOS transistors, which are in the order of 10nm. Wet oxidation is employed to make
thicker oxides, ranging from several hundred nm to about 2µm.
Typically, the process is performed on both sides of the substrate at atmospheric pressure and is modeled by a confor-
mal shell. The silicon consummation during oxidation and local oxidation effects such as the bird's peak are not con-
sidered in the modeling step.
The Thermal Oxidation step uses the Conformal Shell modeling action. For details on this action and its parameters,
see page U4-4.

Generic PECVD
Plasma enhanced chemical vapor deposition (PECVD) is performed in a reactor at temperatures up to ~400°C. The
deposited film is a product of a chemical reaction between the source gases supplied to the reactor. A plasma is gen-
erated in the reactor to increase the energy available for the chemical reaction at a given temperature. The process is
typically performed on one side of the substrate at a time. The two major methods of PECVD are sputtering and evap-
oration.
This step uses a Conformal Shell modeling action. For details on this action and its parameters, see page U4-4.
Sputtering
The substrate is placed in a vacuum chamber with a target of the material to be deposited. A plasma is generated in a
passive source gas (i.e. argon) in the chamber, and the ion bombardment is directed towards the target, causing mate-
rial to sputter off the target and condense on the chamber walls and the substrate. To increase the deposition rate, a
strong magnetic field (magnetron) can be used to concentrate the plasma near the target.
Evaporation
The substrate is placed in a high-vacuum chamber at room temperature with a crucible containing the material to be
deposited. A heating source is used to heat the crucible, causing the material to evaporate and condense on all
exposed cool surfaces of the vacuum chamber and the substrate. The process is typically performed on one side of the
substrate at a time. Typical sources of heating are E-beam, resistive heating, and RF-inductive heating. In some sys-
tems the substrate can be heated during deposition to alter the composition/stress of the deposited material.
LPCVD
Low-pressure chemical vapor deposition (LPCVD) is performed in a reactor at temperatures up to ~900 °C. The
deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typ-
ically performed on both sides of the substrate at the same time.
Spin Casting
The material to be deposited is dissolved in a solvent. The substrate is held by vacuum on a chuck. The solution is
applied to the substrate, which is then rotated at high speed. The rotation spreads the solution evenly over the surface
and causes some of the solvent to evaporate, leaving a thin film of material on the substrate. The substrate is usually
baked immediately after spin casting to remove the remaining solvent in the film. The process is typically performed
on one side of the substrate at a time.

4.4.3: Process Sequences

Silicon-On-Insulator (SOI)
Applying this sequence to the basic default substrate step emulates a silicon-in-insulator substrate. Different methods
exist to produce SOI-substrates. One way is to take a bottom silicon wafer with thermal oxide on it and bond a
thinned top wafer to it. The result is a crystal silicon layer on an insulating oxide.
The thickness of the insulating oxide can be determined in the first step, while the actual thickness of the SOI-layer
will be chosen in the second substep.
Typical values for the insulating oxide are around 1-2µm. The SOI-layer thickness of commercial available SOI-sub-
strates is typically between 10µm and 100µm.
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Ion Implantation Surface
Ion implantation is a process in which a beam of dopant atoms is directly shot into the wafer. This provides a certain
dose of dopants in a layer near the silicon surface. High-temperature annealing in a suitable atmosphere is used to
redistribute these dopants; this process is called diffusion. Ion implantation is typically used in MEMS to create con-
ductors and resistors, especially piezoresistors, in the silicon.
The Ion Implantation sequence is composed of two steps: Implantation Step 1 defines the depth of the ion implanta-
tion after diffusion. Implantation Step 2 is used to fill-in the doped material. Thickness needs to remain 0 in order
emulate a plane surface.
The default setting for the photoresist is positive ("+"). When using a positive polarity for a layout layer and a dark
field mask, the user should draw areas where the photoresist will be opened to allow implantation of the ions, thus
defining the resistors or conductors. For information on photoresist settings, see page U4-44.

Figure U4-23 Layout for Ion Implant Example and 3-D Result
This process sequence is meant to define the geometric properties of the implanted regions, e.g. depth of piezoresis-
tors. It neither simulates any real process effects, such as doping profile, nor can suggest process settings such as the
exact energy of an implant in order to achieve a desired dopant profile.

Electroplating
Electroplating is an electrochemical process in which metal ions in solution are deposited onto the substrate. A thick
patterned resist forms the stencil for the electroplated metal layer. The metal, often nickel or gold, is then electro-
plated into the patterned resist.The electroplating sequence consists of four substeps:
1. Resist Deposition: Choose Resist Material and determine the thickness value. Note that in this CoventorWare
process sequence the thickness of the resist determines the thickness of the electroplated metal layer. In Step
3 the resist mold is completely filled with metal to the highest point of the resist structure. In reality, the
thickness of the resist is usually substantially thicker than the metal layer unless over-plating is desired, lead-
ing to mushroom profiled structures. This CoventorWare sequence does not model overplating.
2. Resist Patterning: The wafer is lithographically patterned by exposing the photoresist and developing it to
form the electroplate stencil.The default setting for the photoresist polarity in this step is positive. Depending
on the layout layer polarity, the photoresist polarity should be selected so as to remove the photoresist in areas
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where electroplating will then define the desired structures.
3. Metal Plating: With a thickness value of 0, the resist mold is completely filled with metal to the highest point
of the resist structure. In reality, the thickness of the resist is usually substantially thicker than the metal layer
unless overplating is desired, leading to mushroom profiled structures. This CoventorWare sequence does not
model overplating.
4. Stripping Resist Stencil: Removes the resist material completely.
Figure U4-24 Electroplating Sequence
Note that in this CoventorWare process sequence the thickness of the resist determines the thickness of the electro-
plated metal layer. In reality, features in different areas of the wafer and regions at the corners of features may plate at
different rates. This effect is not emulated. In addition, surface roughness, which is usually higher for plated materials
compared to evaporated or sputtered ones, is not considered. Generally, a thin seed layer, e.g., 10nm Au, is needed as
a starting layer to electroplate the main metal layer. This seed layer is not considered in the Electroplating process
sequence.
Lift-Off
In a lift-off process, a sacrificial material, such as a photoresist, is first deposited and patterned on the substrate. The
material of interest is then deposited on top and the sacrificial material subsequently removed, leaving behind only
the material deposited directly on the substrate. This process is useful for patterning materials that cannot be etched
without affecting underlying materials on the substrate.
The implementation of the lift-off process is similar to the one for electroplating. It consists of four substeps:

1. Resist deposition: The wafer is coated with the sacrificial photoresist. Choose Resist Material and determine
the thickness value. Note that in this CoventorWare process sequence the thickness of the resist determines
the thickness of the metal layer.
2. Resist patterning: The wafer is lithographically patterned by exposing the photoresist and developing it. The
default setting for the photoresist polarity in this step is positive. Depending on the layout layer polarity, the
photoresist polarity should be selected so as to remove the photoresist in areas where metal deposition will
then define the desired structures.
3. Metal sputtering or evaporation: After patterning the photoresist, metal is deposited, typically by evaporation.
The thickness value should not be modified. With a thickness of 0, the resist mold is completely filled with
metal to the highest point of the resist structure. In reality, the thickness of the resist is thicker than the metal
layer, and metal is deposited over the entire wafer, then selectively patterned when the sacrificial photoresist
is removed. This CoventorWare sequence does not model this procedure explicitly because the Process Edi-
tor does not accept negative thickness values.
4. Stripping of resist: Removes the resist material completely. This step can be disabled to preserve the resist in
the 3-D solid model.
Figure U4-25 Lift-Off Sequence
LIGA
LIGA stands for X-ray LIthography, Electroforming (German: Galvanoformung), and molding (German: Abfor-
mung). This technology allows the user to define high aspect ratio structures in nickel. The process consists of expos-
ing a sheet of PMMA (Polymethyl methacrylate), bonded to a wafer using X-ray lithography. The PMMA is then
developed, and the exposed material is removed. Nickel is then electroplated in the open areas of the PMMA. The
nickel overplate is removed by polishing, leaving high aspect ratio nickel parts. The PMMA is removed, and the
nickel parts may remain anchored to the substrate or be released.
The process sequence is similar to electroplating. One additional polishing step is added:
1. PMMA Deposition
2. PMMA Patterning
3. Metal Plating
4. Polishing
5. Stripping PMMA Stencil

Figure U4-26 Sample Setup for LIGA
After the PMMA deposition in Step 1, the main pattern is defined in Step 2. The default setting for the PMMA resist
of Step 2 is positive (+). When using a positive polarity for a layout layer and a dark field mask, the user should draw
the areas where the PMMA will be removed to allow electroplating in the openings, thus defining the desired struc-
tures. Plating will be done in Step 3. In Step 4 the same mask as for the substrate should be employed to polish the
deposited layers. All the PMMA will be stripped in Step 5.
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According to this process sequence, the actual thickness of the LIGA structure is defined by the thickness of the
PMMA deposition plus the thickness of the plating minus the depth of the polishing step. For this model, the depth of
the polishing (Step 4) should be at least the amount of the metal thickness defined in Step 3.
Except Step 4, the LIGA process sequence is similar to the electroplating sequence. Step 5 can be disabled to preserve
the PMMA stencil in the 3-D solid model.
Figure U4-27 Example Results for LIGA
Anodic Glass Wafer Bonding

Anodic bonding between a silicon and a glass wafer is generally used for wafer-level encapsulation. The substrates
are bonded at elevated temperature (~400 °C) by placing and clamping the substrates between two metal electrodes.
A high DC potential (up to ~1kV) is applied between the electrodes, creating an electrical field that penetrates the
substrates. One substrate is glass that contains sodium ions, which at the elevated temperature are displaced from the
bonding surface of the glass by the applied electrical field. The depletion of sodium ions near the surface of the glass
makes the surface highly reactive with the silicon surface of the other substrate, forming a solid chemical bond.
The modeling sequence Anodic Glass Wafer Bonding consists of two steps:
1. Bonding of the glass wafer
2. Etch (Optional)

Figure U4-28 Sample Process Using Anodic Glass Wafer Bonding Sequence
The first step is the basic bonding process emulated by simply attaching an additional glass substrate to an existing
(and usually structured) silicon wafer. The thickness of the glass wafer needs to be defined. The second step is etching
a via into the glass wafer. When using a positive polarity for a layout layer and a dark field mask, the user should
draw the areas where the photoresist will be opened to allow etching of the desired feed-through. The user should
define the etch depth, undercut (offset), and sidewall angle. The second step is optional and can be disabled if not
needed.
With the Stack Material modeling action, the top glass wafer will be attached to the highest point of the bottom
wafer.
Figure U4-29 Layout and 3-D Model Generated with Anodic Glass Wafer Bonding

Silicon Fusion Bonding

Two silicon substrates are first forced into intimate contact by applying a high contact force. Once in contact, the sub-
strates are held together by atomic attraction forces (Van der Waal), which are strong enough to allow the bonded
substrates to be handled. The substrates are then placed in a furnace and annealed at high temperature, after which a
solid bond is formed between the substrates.
Similar to the Anodic Glass Wafer Bonding sequence, the Silicon Fusion Bonding Sequence consists of two steps:
1. Bonding of the silicon wafer
2. Etch (Optional)
Figure U4-30 Sample Setup for Fusion Bonding
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The first step is the basic bonding process emulated by simply attaching an additional silicon substrate to an existing
(and usually structured) silicon wafer. The thickness of the silicon wafer needs to be defined. The second step etches
a via into the silicon wafer. When using a positive polarity for a layout layer and a dark field mask, the user should
draw the areas where the photoresist will be opened to allow etching of the desired feed-through. The user should
define the etch depth, undercut (offset), and sidewall angle. The second step is optional and can be disabled if not
needed.
With the Stack Material modeling action, the top silicon wafer will be attached to the highest point of the bottom
wafer.
Figure U4-31 Example 2-D Layout and 3-D Result for Fusion Bonding

4.5: Foundry Processes

Independent foundry data include processes, material databases, and layout template files for the following foundries:
DALSA Semiconductor, Imec, Tronics, MEMSCAP, and Beijing University. The processes are accessible from the
Process Editor’s Process Library pane under the Foundry Processes folder. The user can load them into the Process
Editor by simply double-clicking on the desired process. Multiple process files can be opened at the same time. The
material databases for each process are placed in the user's Shared folder during installation and are selectable from
the Solid Model Builder dialog. The layout template files are placed into the user's \Shared\Layout_Templates folder
during installation. These layout templates will appear in the Layout file field’s drop-down menu. They can also be
selected using New from Template from a drop-down menu next to the Layout Editor icon. When a layout template is
selected, the Layout Editor opens with the specified template already loaded. The layout template includes GDSII
layer numbers, as well as the mask names for the specific manufacturing processes and are compatible to the design
handbooks provided by the different foundries.
In addition, all foundry-related files are in CoventorWare10\apps\Foundry.
Double clicking on a foundry process in the Process Library automatically creates a new process file.
For more details on the foundry design kits shipped with CoventorWare, see the section starting on page U6-1.
4.6: Menus
This section documents the options available from the Process Editor menu bar. Each menu bar function is described,
and any alternate method of performing the same function is listed.
4.6.1: File
The File menu is used for file management. It includes the following functions:
 New: This option allows the user to open a new, blank process file. When it is selected, the Process Descrip-
tion window opens. The keyboard shortcut in Ctrl + N. The equivalent icon is .
 Open: This option opens a file selection dialog. Recently opened process files are listed in the File name field
drop-down window. Note that more than one process file can be open at the same time. The keyboard short-
cut is Ctrl + O. The equivalent icon is .
 Save: This option saves the active process file. If the file had not been previously saved, a file save dialog will
open. The keyboard shortcut is Ctrl + S. The equivalent icon is .
 Save As: This option allow the user to save the active process file under a new name. It opens a file save dia-
log.
 Properties: This option opens the Properties dialog, which displays the file properties such as creation date,
version number. It also allows the user to make the file editable or uneditable, and to set a password. For more
information on this window, see the File Properties heading below.
 Close: This option closes the active process file.
 Recent Files: This option has a submenu that contains the four most recently opened files. These options
allow the user to open one of these files without having to navigate to its directory location.
 Exit: This option closes the Process Editor.

File Properties
This dialog displays file properties, including file creation date, file creator, the date last saved, and by whom the file
was saved. These properties cannot be edited.
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 User version number
By default, the software assigns a version number that is incremented each time the file is saved. The user can
edit this field, but once the user modifies it, it will no longer be auto-incremented.
 User Comments
This field allows the user to add text. This field is useful for descriptive information pertaining to the file.
 Editable
This check box can be set by any user who can open the file. Unchecking this box will prevent a user from unin-
tentionally changing a file.
 Password
If a password is set, the file cannot be opened unless the user enters the correct password. When the file is
selected for opening, the Enter Password dialog appears.
4.6.2: Edit
 Undo: There is no restriction on the number of undo actions.The keyboard shortcut is Ctrl + Z. The equiva-
lent icon is .
 Redo: The keyboard shortcut is Ctrl + Y. The equivalent icon is .
 Cut: The keyboard shortcut is Ctrl + X. The equivalent icon is .
 Copy: The keyboard shortcut is Ctrl + C. The equivalent icon is .

 Paste: This function has three options: Above, Below, and After Last. There is no keyboard shortcut or equiv-
alent icon.
 Delete: The keyboard shortcut is Del. The equivalent icon is .

 Sequence
 Create: Creates a new sequence using the selected steps. Use the Ctrl or Shift keys to select the steps to
be included in the sequence.
 Flatten: Eliminates the sequence hierarchy. Substeps of the selected sequence become steps in the
process and are no longer part of a sequence.
 Expand: Expands the selected sequence so that all its substeps are visible; equivalent to clicking on the
+ sign beside the sequence step number.
Collapse: Collapses the expanded sequence so that only its substeps are hidden. Only the sequence step
name is visible. This function is equivalent to clicking on the - sign beside the sequence step number.
 Enable/Disable: These settings determine if the selected step will be used to build the solid model. Their
functionality is equivalent to the Enable Steps and Disable Steps icons.

 Add to Library: Adds the selected step or sequence to the Process Steps folder of the active Process Library.
4.6.3: View
 Expand All: Expands all sequence steps in a process so the their substeps are visible.
 Collapse All: Collapses all sequence steps in a process.
 Columns: This option opens a dialog for selecting columns to be displayed in the Process Description win-
dow. By default, all columns are displayed.
 Clipboard: This option opens a dialog that displays any steps that have been copied during a Process Editor
session. The steps appear as icons, but when the user moves the cursor over the icon, a tool tip will display
the name of the step. If multiple steps are copied at once, they will appear as a single icon in the Clipboard.
4.6.4: Tools
The Tools menu has two submenus: Edit Process Steps Library and Options.
Edit Process Steps Library

This option allows the user to edit the default values of a step or to delete a step in the Process Steps library. It opens
the Process Steps library as a fab process, and all its steps are displayed in the Process Description pane. The steps
can then be edited or deleted. Click on the Save icon or select File > Save to save the changes to the Process Steps
library. To close the Process Steps library process, click on the End Edit Mode button that appears above the Process
Library pane. If the process was saved, any changes that the user made while in Edit Mode now appears in the Pro-
cess Library pane.

Options
This selection opens a dialog for setting a default process library, error checking, and automatic save intervals. When
the user selects an option in the right pane of the dialog, the related settings are displayed in the left side of the dialog.
Options: Process Library

This option sets the default process library process file. The steps in that file determine the steps that appear in the
user’s Process Steps folder in the Process Library window. CoventorWare includes a default Process Library file that
is located in \Design_Files\Shared\Process.
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Dock Window Options sets the location of the Process Library pane.
Options: Save
This dialog allows the user to enable/disable the AutoSave function. If enabled (default setting), the active process
file will be saved at time intervals specified in the Save Interval field.

Foundry Folder
This option sets the default foundry folder. The files in that folder determine the steps that appear in the user’s
Foundry Folder in the Process Library window. CoventorWare includes a default Foundry folder that is located in
\CoventorWar10.3\apps. When CoventorWare is first installed, the folder is copied to the user’s \Design_Files\
Shared\Process directory. This folder contains several sequence steps that are recognized foundry processes, includ-
ing DALSA_MK15S1, IMEPKU, MetalMUMPS, PolyMUMPS, SoiMUMPS, SiGeMEMS, SINTEF_Move-
MEMS_PZT, and Tronics MEMSOI.
4.6.5: Windows
The Windows menu lets the user control what is displayed in the Process Description window and control how it is
displayed. The menu list the open process files, and the user can select a file from the list to make it active. If more
than one file is open, the user can also select from one of these options:
 Cascade: This option makes all open files active, and displays them so that one is on top of the other, with the
title bar for each file visible.
 Tile: This option displays all open files so that they are beside each other in the Process Description window.
 Tile Horizontally: This options displays all open files so that they are underneath each other.
4.6.6: Help
This menu includes a Reference option, which is a link to the Process Editor reference documentation.
The About Process Editor option opens a dialog that displays the Process Editor version number.
The What’s This? option activates a question mark roll-over feature. When the user moves the question mark over a
dialog and clicks, the on-line help will display information relevant to that dialog. The same functionality is activated
with the What’s this icon.
4.6.7: Right Click Menus

Many of the Process Editor menu functions are also available by right-clicking on a field or step, and selecting an
option from the pop-up menu. The options available are determined by which field or step has been selected.
Right-clicking on a process step opens a pop-up menu with these options:
 Cut
 Copy
 Paste: Above, Below, After Last
 Delete
 Add to Library

 Create Sequence
 Flatten Sequence
 Move Up
 Move Down
 Enable/Disable
Right clicking on select fields in the Step Parameters pane opens a pop-up with these options:
 Undo
 Redo
 Cut
 Copy
 Paste
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 Clear
 Select All
Right clicking on a step in the Process Library pane opens a pop-up with these options:
 Insert Above Current Step
 Insert Below Current Step
 Insert After Last Step
4.7: Deposit and Etch Basics

MEMS processing can range from the simple to the complex, depending on the fabrication specifications and the
level of integration with other types of structures on the substrate. All MEMS processes can be reduced for Process
Editor purposes to a series of deposit and etch sequences that will simulate the electrostatic and mechanical parame-
ters of the design.
In the Process Editor, three different types of deposit techniques can be modeled, as shown here:
Figure U4-32 Modeled Deposit Types
Planar Fill
Stacked
Conformal Shell SCF = 1
SCF = 0.5
In Figure U4-32, each of the four examples shown starts out with an etched layer (light blue). The three deposit types
are shown in dark green and represent ways in which deposited material can flow over non-uniform surfaces.

Planar deposits fill in any uneven areas and result in a uniform deposition over the top of the surface. The thickness
specified for the planar fill determines the layer thickness with a reference point to the highest point in the Z-direc-
tion. If the thickness is negative, the structure will be thinner than the mold layer. For example, in the electroplating
sequence on page U4-27 the mold layer is 5 µm thick. Defining a planar fill with -3 µm results in a structure height of
2 µm (5 µm - 3 µm). If the thickness is positive, this means the mold will be filled to the top plus the additional thick-
ness determined by the thickness value, as shown in Figure U4-32. If a thickness of 0 is specified for the planar fill,
the mold will be filled exactly to its surface.
Stacked deposits are more rigid depositions that lay on top of any irregularities in the surface, but which do not fill in
any of these areas. The Conformal Shell deposit conforms to the profile of the surface and flows over the uneven lev-
els of the material already present. Variation in the Surface Conformality Factor changes the thickness of the vertical
part of the deposit with respect to the horizontal deposit. These different deposit types are used for different reasons in
the sequence of processing a MEMS design. Examples in this section illustrate the relationship of the deposit steps to
the rest of the processing sequence. It should be borne in mind that CoventorWare does not distinguish between what
can and cannot be fabricated in an actual foundry process.
Etching selectively removes some or all of any deposited material. Etches define MEMS mechanical components,
active transistors, and other structures. Etching is accomplished by first placing a mask over a deposited area. The
simplified mask example shown in Figure U4-33 (top view) is used to coat the wafer with material that resists etching
in the shaded area of the mask (known as a positive-polarity mask). After a sequence of chemical processing, the
etchant creates two holes by removing the small rectangular areas of the deposited material on the top surface of the
wafer (and the material outside the dark rectangle). The examples in this section illustrate the relationship of the etch-
ing steps to the rest of the processing sequence.
Figure U4-33 Simplified Version of Mask Used for MEMS Processing
4.7.1: Side Settings

The user selects which side of the wafer to apply a deposit or an etch. A Front Side setting applies the deposit or etch
to the front side of the wafer. The Back Side setting applies the deposit or etch parameters to the back side of the
wafer. Figure U4-34 shows the same device that had a conformal deposit applied to the front and backside of a wafer
Figure U4-34 Side Deposit Examples
frontside
backside

4.7.2: Conformal Deposit after a Release Step

In CoventorWare 10.0, a process file can have more than one release step (specified with the Delete modeling action).
The release step can be in the middle of a process; this makes floating parts (volumes without any support) and faces
in the -Z direction possible. If a release step is followed by a conformal deposit, any faces that can be accessed after
the release will be covered by the deposit material. Figure U4-35 shows a sample device after a release step. The
green line outlines the faces that are accessible for a front side conformal deposit. Note that boundary faces and faces
belonging to the bottom faces are ignored for a front-side operation.
Figure U4-35 Accessible Faces after a Release Step
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Figure U4-36 demonstrates the result of a front-side conformal deposit after a release step. Note that the deposit is on
both sides of the floating parts and the -Z faces because those faces are accessible from the front side after the release.
Figure U4-36 Front-Side Conformal Deposit after a Release Step
Figure U4-37 shows a back-side conformal deposit after a release step.The material is deposited on all the faces
accessible from the bottom, including the floating part and the +Z faces.
Figure U4-37 Back-Side Conformal Deposit after a Release Step
4.7.3: Basic MEMS Process

All processes start with a base substrate. The Process Editor then uses a combination of deposit and etch sequences to
build and selectively define the layers that make up the structures to be modeled. The largest variation is with the type
of deposit step, which is tailored to the structures to be fabricated and the particular process line used for fabrication.
An example is a simple cantilevered beam. The sequence is shown in Figure U4-38.

Figure U4-38 Cantilever Beam Process Sequence
Base substrate
10 μm silicon
Deposit sacrifice layer 4 μm PSG Stacked

deposit
SP2 Etch Use negative mask to

create cantilever profile
1 μm titanium
Deposit beam metal 1 Conformal deposit
SP1 etch
SP1 Etch (Etch not visible from
this perspective)
2 μm gold
Deposit beam metal 2 Conformal deposit
SP1 etch
SP1 Etch (Etch not visible from
this perspective)
Delete sacrifice layer PSG removed
A series of deposit and etch sequences builds the supports and creates the electrical device that controls the cantile-
vered beam movement. By controlling deposit thickness, the correct spacing between the beam and the underlying
ground plane is achieved for proper beam deflection.
The sacrifice layer shown in the diagram starts out as material that supports the beam during processing. It serves no
electrical purpose, and is etched away when processing is complete to allow free movement of the beam.
Two types of deposit steps previously described are used. The initial stacked deposit on top of the base allows the
beam metal to lay flat on top of the underlying layers. The conformal deposits for the metal follow the contours of the
processed wafer.
The simple process sequence shown involves eight different steps. In an actual foundry process, several other steps
are required, but are removed here for clarity. Typically, the base substrate is much greater than the 10μ shown, but
for the purposes of this modeling the actual thickness is not important. The process that the software needs to simu-
late is even more basic because the electrostatic and mechanical solutions require specification only for the compo-
nents that affect the beam characteristics. This example does not simulate the functional performance of the structure,
so steps that involve the creation of the control devices (such as electrodes to attract the beam) are not included.

4.7.4: Structure of a Process File

This section is an overview of process file creation. Within each line are settings for the parameters that are used in
creating the step. Any setting can be edited by clicking in the appropriate area on the line, and then entering the
desired setting in the Step Parameter fields.
To see a list of materials appear in the Materials column of the Process Editor, set the correct path to the MPD file
you will use in the Materials field of the Console’s Solid Model Builder. If the path is not set, select the folder icon
next to the field and navigate to the correct file.
4.7.5: Building a Process Sequence

What follows is a process sequence for the cantilevered beam shown in Figure U4-38. Colors and mask names are
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imported by the Layer Browser when the process file is selected during layout creation.
Step 0 - Substrate
The Substrate is the starting point for all process sequences. This first step in the Process Editor is the only step that
cannot be deleted or placed in another position. The Substrate step appears automatically (with a default thickness of
50μm) whenever a new process file is created. This layer defines the boundaries of the active areas of the layout. The
material, thickness, layer name, and mask name are specified by clicking on the step, and then editing the fields in the
pane below the list of steps. Silicon is the typical material used for the substrate, analogous to the silicon substrate
upon which the wafer structures are built. The material and thickness settings are actually not relevant for this type of
device because generally the structures above the Substrate are the only parts of the component used by the solvers.
Step 1 - Deposit Sacrifice Layer
This deposit will provide temporary support for the cantilevered beam. It is called sacrificial because it will be com-
pletely etched away at the end of the process sequence to permit free deflection of the completed beam. Each deposit
is assumed to cover the entire surface beneath it, so deposit extents are not defined. This layer is simply stacked on
top of the existing base. The phosphosilicate glass (PSG) material (selected from the Materials Database) and thick-
ness are derived from process line specifications. Their values are included in the flow because they affect the spac-
ing between the beam and the electrode. This spacing is significant because it affects capacitance, one of the beam’s
electromechanical characteristics.

Step 2 - Etch PSG
This is the first etch step. The selective etch requires a mask to define the locations where PSG material is to be
removed. The StraightCut with the Cut Last Layer Completely and Front Side settings means this etch that will go
completely through the previous deposit. Because the Cut Last Layer Completely is selected, there is no need to spec-
ify an etch depth. The anchor mask, defined in the Layout Editor, will define the area to be etched. The minus (-) sign
indicates that it is a negative polarity mask—the areas under the clear portions of the mask are protected from the
etch operation. The Offset setting allows optional oversizing or undersizing of the mask during the etching step. The
SidewallAngle setting refers to the draft angle slope of the etch profile on the deposit sidewall. Because no angle is
specified, the sidewalls will be perpendicular.
Step 3 - Deposit Beam Metal 1
This next deposit must conform to the contours of the surface, so a Conformal Shell deposit is used. The titanium
material is specified with a 1.0μm thickness. The titanium forms half of the metal sandwich that is used to create the
movable beam. The default value of 1 for the Surface Conformality Factor (SCF) means that the vertical surfaces of
the deposit are the same thickness as the horizontal surfaces.

Step 4 - Etch Titanium
This etch step defines the actual beam area. While no difference is seen in the cross-section, a top-down view would
show the specific area where titanium is etched away. The beam mask name appears as a layer name in the 2-D draw-
ing. This etch step also uses the Cut Last Layer Completely and Front Side settings. The plus (+) sign to its right indi-
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cates that it is a positive mask—the areas under the opaque portions of the mask are protected from the etch
operation. No offset or sidewall angle is specified. Etchants are selected by the foundry and are not identified in the
process file.
Step 5 - Deposit Beam Metal 2
A Conformal deposit is specified because this deposit must conform to the contours of the surface. Gold is specified
with a 2.0μm thickness. The gold forms the other half of the 3.0μm metal sandwich that is used to create the movable
beam. As before, the Surface Conformality Factor is left at 1 so that the vertical portion of the deposit is the same
thickness as the horizontal portions.
Step 6 - Etch Gold
This step uses the beam mask again, this time to etch the gold deposit. The Straight Cut step is used with the Cut Last
Layer Completely and the Front Side settings. While no difference is seen in this cross-section, a top-down view
would show that the gold is etched away in exactly the same places as the titanium was in Step 4. A positive polarity
mask with no offset or sidewall angle specified.

Step 7 - Delete Sacrifice Layer
PSG removed
For the final step, a Delete modeling action is selected, and PSG is selected as the Material. This step removes the
any PSG material in the process steps. With the layer removed, the beam may now deflect freely under application
control in the final fabricated device. This completes the process characterization.
4.8: Etch Conventions

In addition to the etch depth, the values of the Photoresist, Offset, and SidewallAngle settings in the Process Editor
determine the shape and size of a feature or etch. The use of various combinations of positive and negative signs may
be confusing; therefore, these illustrations are included to clarify the meaning of a sign when used for a particular
field.
4.8.1: Photoresist
In the simplest terms, a mask with a positive photoresist results in a feature created from the deposit layer; a negative
mask results in a hole in the layer. The examples that follow show the same layout mask (Figure U4-39) and the
resulting solid model when a positive or negative photoresist is applied to the mask.

Figure U4-39 2-D Layout
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Figure U4-40 Positive Photoresist and Resulting Solid Model

Figure U4-41 Negative Photoresist and Resulting Solid Model

4.8.2: Offset
The Offset parameter can be used to increase or decrease the area of the mask material in the positive or negative XY
plane.
To apply offsets specified in the Process Editor to a solid model, make sure to check the Apply Offset Values on the
Designer tab.
Figure U4-42 Front Side Etch by Depth, Positive Photoresist, with Offset
Mask
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+ - - +
X (height of the deposit layers)
Material to be etched
Etched material with a positive offset Etched material with a negative offset
X X

Figure U4-43 Front Side Etch by Depth, Negative Photoresist, with Offset
Mask
_ _
+
+
X X

Figure U4-44 Back Side Etch by Layer, Positive Photoresist, with Offset
+ - - +
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Mask
Etched material with positive offset Etched material with negative offset
X X

Figure U4-45 Back Side Etch by Layer, Negative Photoresist, with Offset
Mask
X X

4.8.3: Sidewall Angles

Sidewall angles can be defined with either a positive or negative value. For positive angles, the walls will diverge
away from the drawn feature. For negative angles, the walls will converge toward the interior of the drawn feature:
Figure U4-46 Sidewall Convention

Front, positive sidewall etch Front, negative sidewall etch
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Back, positive sidewall etch Back, negative sidewall etch
In Finite Element Analysis, sidewall angles increase the complexity and simulation time, but do not necessarily
increase the accuracy of the solution.
Figure U4-47 through Figure U4-50 show the results of using sidewall angles with different etch parameters.

Figure U4-47 Front Side Etch by Depth, Positive Photoresist, with Sidewall Angle
Mask
_ _
+ +
Etched material with a negative sidewall angle Etched material with a positive sidewall angle
X X

Figure U4-48 Front Side Etch by Depth, Negative Photoresist, with Sidewall Angle
Mask
_ _ +
+
X(height of the deposit layers)
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Etched material with a negative sidewall angle Etched material with a positive sidewall angle
X X

Figure U4-49 Back Side Etch by Layer, Positive Photoresist, with Sidewall Angle
_ _
+ +
Mask
Etch material with a negative sidewall angle Etch material with a positive sidewall angle
X X

Figure U4-50 Back Side Etch by Layer, Negative Photoresist, with Sidewall Angle
_ _
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+ +
Mask
Etch material with a negative sidewall angle Etch material with a positive sidewall angle
X X
To analyze a model with multiple sidewall angled structures, each layer must be meshed as a separate model, and
then merged.

4.9: References
1 MEMS and Nanotechnology Exchange: http://www.mems-exchange.org/catalog/
2 Marc Madou, Fundamentals of Microfabrication, ISBN 0-8493-9451-1, CRC Press, 1997.
3 Stephen Senturia, Microsystem Design, ISBN 0-7923-7246-8, Kluwer Academic Publishers, 2001.

Section 5: Preprocessor Reference Version 10.3
Section 5: Preprocessor Reference

5.1: Functionality
The Preprocessor is an interactive module that enables users to view and edit solid models, generate meshes, view
meshes, and do mesh quality checks. The Preprocessor has these capabilities:
 display a model (see page U5-4)
 partition a model (see page U5-6)
 set material properties for parts of a model (see page U5-32)
 create symmetric, plane, and cyclic geometries (see page U5-21)
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 name faces, parts, conductors, and dielectrics (see page U5-13)
 generate a mesh (see page U5-15)
 generate different meshes for different entities of a model (see page R2-26)
 refine a mesh on model edges, faces, or vertices (see page R2-26)
 query a mesh for mesh statistics (see page U5-45)
 heal a model (page U5-39)
 merge models or meshes
 transform models or meshes (page U5-11)
5.2: Window Description

The Preprocessor consists of two panes: the Geometry Browser and the Canvas. The two panes function as two dif-
ferent views of the same data model except that the Canvas displays the 3-D view, while the Browser displays a hier-
archy of geometric entities.
Canvas
Geometry
Browser

5.2.1: Geometry Browser

The Geometry Browser displays the hierarchy of model and mesh entities. It has the structure of a typical Windows
directory hierarchy and reveals the interactions and dependencies of the model and mesh in a selected database. The
Geometry Browser shows how entities are related. Clicking on a + sign beside a folder expands the Geometry
Browser to reveal layer and part entities. The Mesh Model folder has an additional region entity. Edge and vertex
entities are not displayed in the browser unless they are selected on the Canvas. A face entity is only displayed if it
has been named or if it or its lines or vertices have had meshed settings applied.
There are three main folders in the Geometry Browser: Solid Model, Mesh Model, and Conductors/Dielectrics.
Solid Model
Initially, when a solid model is loaded, all layers are listed in the Solid Model folder. The entities in the Solid Model
folder include layers and parts. From this folder, the user can define and partition layers, assign materials, designate a
part as a solid or fluid, as conductor or dielectric, and can fix a part so that it is only considered for electrostatic anal-
ysis.
Mesh Model
Typically, the user may not want to include all the layers in the Solid Model folder in an analysis. The Preprocessor
uses the Mesh Model folder to contain layers that will go into an analysis; i.e. the entities in the Mesh Model folder
define the computational domain of an analysis.
When a solid model is first loaded, the Mesh Model folder is empty. The user selects one or more model layers then
adds them to the Mesh Model folder either by right-clicking and selecting Add to Mesh Model, or by holding down
the left mouse button while dragging the layers to the Mesh Model folder. The Preprocessor automatically converts
these layers to mesh regions. The default action is such that touching layers are merged into one region. Merging
touching layers automatically is a design principle for safe-guarding the convergence and accuracy of the numerical
simulations so that a conformal, continuous mesh is generated through the touching layers. However, keep in mind
that some solvers (electromechanical) can use links and ties (see page R4-53) and do not necessarily require the con-
formity of the mesh on touching layers. For these solvers the automatic merge layer feature can be turned off (see
page U5-54 for more details). But in general, a continuous mesh is almost always a better option than links and ties.
Adding a layer to the Mesh Model folder does not generate the mesh, but rather indicates that a layer is available for
meshing. The user then selects meshing options for a each region and sets local meshing controls upon selected sub-
entities. Once a layer has been added to the Mesh Model folder, it can no longer be selected from the Solid Model
folder. The Mesh Model entities include regions, layers, parts, faces, edges, and vertices.
Conductors/Dielectrics
When the user adds layers to the Mesh Model folder, the Conductor/Dielectrics folder is created and automatically
populated. Parts that touch and have one conductor material type are designated as a single conductor with a unique
ID. Dielectrics are determined in a similar manner.
5.2.2: Canvas
The Canvas is the pane of the Preprocessor in which a 3-D model or mesh is rendered. The toolbar selection mode
icons can be used to select and manipulate objects in the Canvas. When a selection icon is active, the user can click
on the Canvas to select an entity that is the same type as the active selection mode. Right-clicking on an entity
accesses a context-sensitive popup menu with options related to that entity.

5.2.3: Geometry Browser and Canvas Interaction

Selections in the Geometry Browser and Canvas are synchronized: if a user selects an entity in the Canvas, the corre-
sponding entity in the Browser is highlighted. Or, if a entity is selected in the Geometry Browser, the corresponding
entity in the Canvas is highlighted. As noted earlier, face, edge, and vertex entities do not appear in the Geometry
Browser unless they are selected in the Canvas using the Face, Edge, or Vertex Selection Mode (see page U5-16).
Note that a selection mode icon does not need to be active for the user to make a selection in the Geometry Browser.
The user can make multiple selections in the Geometry Browser and the Canvas: Use Ctrl + left-click to make multi-
ple selections in the Geometry Browser or the Canvas. Use Shift + left-click to select a range in the Browser. Note
that when making multiple selections, only one type of entity is allowed. For example, a user could not select both a
part and a face.
In both the Browser and the Canvas, a right-click brings up a context-sensitive menu that provides shortcuts for oper-
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ations that are allowed on the selected entity.
5.3: Preprocessor Terminology

To understand how the Preprocessor creates a solid model and a mesh and how it creates a model hierarchy, the user
must be familiar with the terminology used in the Preprocessor module. This section defines key terms in model and
mesh creation.
5.3.1: Model Definitions

edge: a line or a curve that connects two vertices.
face: a surface that is defined by a closed set of edges. For example, a cube has six faces. Note that the faces corre-
spond to patches in the solver BCs dialogs.
external face: an element face that coincides with a model face. An element is external if it has only one element
adjacent to it or if it has two adjacent elements, but those elements are on different parts.
internal face: an element face that coincides with a part or with a model face that is adjacent to two parts only.
layer: a collection of one or more parts that results from one or more identifiable steps in the fabrication process. All
of the parts in a layer are made from the same material.
model entity: a generic term for any component of a solid model. For example, vertices, edges, faces, parts, and lay-
ers are all entities.
part: a volume that is defined by a closed set of faces made out of one material. For example, a cube can be a part.
patch: one or more faces that have the same name.
solid model: the 3-D topology of a device. A solid model consists of one or more layers.
Tolerant vertex: If displayed vertex coordinates are prepended with "Tolerant vertex", it means that this particular
vertex is determined with a looser tolerance than the default; therefore, the displayed coordinate is less exact than the
default accuracy. This maybe important when users copy and paste those coordinates to create a partitioning entity.
vertex: a point in three-dimensional space. For example, a cube has eight vertices.
5.3.2: Mesh Definitions

element: a volume that is defined by a connected set of element faces.
element face: a planar surface that is defined by a connected set of element edges (parabolic element faces can be
non-planar).
element edge: a line of curve that connects two nodes.

mesh: a collection of mesh entities such as nodes, elements, element faces, and element edges.
mesh entity: an entity that belongs to the mesh. For example, nodes, elements, element faces, and element edges are
mesh entities.
node: a point in three-dimensional space. All other mesh entities, namely element edges, element faces, and elements
can be defined by a directed set of nodes. The order of nodes in the set determines the orientation of each mesh entity.
surface mesh: a mesh that descretizes the top face of a solid model.
volume mesh: a mesh that descretizes the volume enclosed by the faces of the solid model.
region: consists of one or more layers that touch each other.
5.4: Preprocessor Flow

This section outlines the typical work flow for the Preprocessor. Individual users may incorporate other steps, such as
partitioning or splitting regions.
1. From the Console, click on the Build Solid Model icon.

2. Enter the desired model name in the dialog. Note that the name cannot include the / or \ character.
3. Make sure the desired mpd, process, and layout file are displayed in the appropriate field.
4. Click on Build. The Preprocessor will open when the software has finished building the solid model.
5. From the Solid Model folder the user may choose to do any of these tasks:
 Add a plane, block, or a wedge.
 Use a plane or wedge to create symmetry.
 Use a plane or a block to define a partition (from Solid Model > Partition). Partitioning a layer allows the
user to delete unwanted features from the model or to create layers for more refined meshing.
 Designate a part as a conductor or dielectric.
 Designate a part as a solid or fluid.
 Remove a part from any mechanical simulation.
6. Select and add the layers to be meshed to the Mesh folder.
7. Name faces.
8. Name parts.
9. Name conductors.
10. Right click on each mesh region and set the desired mesh type and other meshing controls.
11. Click on the Generate Mesh icon.
12. Save the model.

5.5: Solid Modeling Operations

The solid modeling software produces a solid model of a MEMS device by applying the process description to a 2-D
layout. Each deposit layer in the process file corresponds to a layer in the Solid Model folder. The model acts as a ver-
ification that the fabrication process will produce a device with the desired 3-D geometry. It is also the input to the
mesher.
A solid model usually contains multiple layers. Each layer consists of one of more parts. Parts are enclosed by three
or more faces. Faces are bordered by three or more edges. Edges are defined by two vertices. The figure below dis-
plays the hierarchy of a typical solid model. Note that the face, edge, and vertex entities are not displayed by default.
In Figure U5-1 these entities are displayed in the Geometry Browser because a vertex was selected in the Canvas.
Figure U5-1 Geometry Browser Displaying Model Hierarchy
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From the Solid Model folder, the user can manipulate the solid model in several ways:
 partition layers
 transform layers
 merge solid models
The sections that follow describe how to perform these operations.

5.5.1: Partitioning
The Partitioning tool allows the user to create new entities in the solid model by partitioning layers. Partitioning a
layer results in two or more solid model layers. This tool is useful for the following operations:
 exclude features from the solid model, and therefore from subsequent analyses
 partition layers of the model so that different material properties can be applied to different parts of the layer
 create new entities that can then have boundary conditions applied
 partition layers so that different meshes can be applied to features that originally would have been in the same
region. Note that if you create different meshes in this manner, you will have to use links and ties in a Mem-
Mech simulation. See page R4-53 for information on how to use links and ties.
This tool can be used only if the Mesh Model folder is empty.
To partition a model, the user adds a plane or a block entity to the Solid Model folder. The user then selects a layer or
a set of layers and applies the partition. The selected layer(s) is then divided. These steps are illustrated in the follow-
ing example.
The model shown below consists of two layers: a substrate layer and a plate layer. The plate layer has one part that
consists of a plate with four tethers. We want to partition the model so that different mesh dimensions can be applied
to the tethers.

Partition Using a Plane
1. Click on the Vertex selection mode icon.

2. Use the Ctrl key to select three vertices on the model face where the tethers touch the plate, as shown below:
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Do not select three vertices that happen to be on a straight line; it will not work.
Note that if displayed vertex coordinates are prepended with "Tolerant vertex", it means that this particular vertex
is determined with a looser tolerance than the default; therefore, the displayed coordinate is less exact than the
default accuracy. This maybe important when users copy and paste those coordinates to create a partitioning plane.
Partitioning with such a plane may fail.
To deselect vertices, click on an empty spot on the Canvas.
3. Select the Solid Model > Insert > Plane > Use Selected Vertices. This creates a plane that coincides with the
vertices selected, as shown in Figure U5-2.

Figure U5-2 Inserted Plane to be Used for Partitioning
plane
Note that instead of selecting the vertices and then adding the plane, the plane can be added first using the Add
a Plane icon. , and its position then can be adjusted (right click on the plane, and select Properties).
This dialog offers more control than the positioning handles that are visible when the plane is selected. It can
be used to include a point that is not a model vertex, for example, the midpoint of an edge.
4. Select the layer or layers (use the Ctrl key to select more than one) to be partitioned and the plane just created.
5. Select Solid Model > Partition. The selected layer is now partitioned into two layers, or if two or more layers
were selected to be partitioned, you could have several new layers. The newly generated layers are desig-
nated with LayerX_X. In our example, Layer1 is partitioned to separate the tethers from the plate, and
became Layer1_1, and Layer1_2. The resulting Geometry Browser and solid model are shown in Figure U5-
3:

Figure U5-3 Partitioning Result
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Partition Using a Block
The solid model presented above can also be partitioned using a block, which would be able to separate all of the teth-
ers from the plate in one partition.
To partition using a block:
1. Use the Vertex selection mode icon and the Ctrl key to select the coordinates that will be used to define the
block. The vertices/coordinates used to create the block are shown below:
(25,50,5)
(-25,-50,0)
2. Select Solid Model > Insert >Block > Use Selected Vertices. The block created coincides with the plate:

Note that instead of selecting the vertices and then adding the block, the block can be added using the Add a
Block option available from the Add A Plane icon drop-down menu. By default the block encompasses the en-
tire design. To adjust its positioning, right click on the block in the Geometry Browser, and select Properties.
The dialog shown below opens. Use this dialog to enter the desired coordinates.
3. Use the Ctrl key to select the block and the layer(s) to be partitioned.
4. Select Solid Model > Partition. The result is shown below:

5.5.2: Applying Transformations

The Preprocessor allows the user to transform a solid model. The Transform option, accessed from the Tools menu,
provides the capability to change model orientation, length, thickness, and other geometric dimensions without hav-
ing to change the layout or process files and rebuild the model. Transformations are allowed on layers in the Solid
Model folder. The user selects a layer or layers, and then selects Tools > Transform. The Model Transform dialog
will open with the following options in its drop-down menu:
 Translation
 Rotation
 Scaling
Translation
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This option translates the model in the global coordinate space by the distance specified in the field. For example, if
the user specifies 0.0, 10.0,0.0, all the nodes in the model are translated 10 µm in the Y direction.
Rotation
This option allows the user to rotate the model by specifying the vector direction, the origin, and angle of rotation.
The user can specify the components of the vector that defines the direction of the axis of rotation using the Vector
field or can specify a X, Y, or Z vector direction. The Origin field specifies the rotation axis origin, and the Angle
(deg) field designates the angle of the model’s rotation around the axis specified by the other settings.

Scaling
This option scales the dimensions of the model. The X-Dir, Y-Dir, and Z-Dir scale the model in the designated dimen-
sion. These values must be positive. The Origin field specifies the absolute reference point for scaling.
Limitations And Restrictions

Solid model transformations can only be applied to layers (not parts). To transform a part, use the partition option to
separate a part into its own layer.
Note that changes in the topology and connectivity of the model parts may occur as the result of the transformation.
The user must verify that the model appears as desired before meshing.
Solid model transformations may significantly alter the model topology, so transformations are not allowed on any
layer that have been added to the Mesh Model folder.
If the user selects a layer or another entity from the Mesh Model folder, the Mesh Transform dialog will open. For
more information on the Mesh Transform option, see page R2-35 of the Field Solver Reference.
For each layer, only one transform will be applied each time. To do multiple transforms for the same layer, perform
one transformation after the other. However, the user can apply one transform to multiple layers.
5.5.3: Merging Models

Users can merge solid models within the same database or by importing solid models from external tools. To merge
solid models, the user will open one of the models to be merged in the Preprocessor, and then select File > Append >
Solid Model. A dialog will open that will prompt the user to select another solid model using a drop-down menu or
the Browse icon. After the user selects a model and clicks on OK, two models will appear merged in the Preprocessor
window. The transformations functions (accessed from the Tools menu) can be used to adjust the model as necessary.
Limitations and Restrictions

A solid model and a meshed model cannot be merged.

5.6: Naming Entities

When a solid model is generated, the software assigns a unique, default designation to each entity. This designation
consists of the entity type and an identification number. For example, a part would have a designation like Part_2.
Layer numbers and names are assigned according to the deposit layers in the process file.
From the Solid Model folder, the user can assign or change names of layers and parts. From the Mesh Model folder,
the user can assign names for layers, parts, faces, and conductors. To assign a name, select the desired entity in the
Geometry Browser or in the Canvas, and then right click to select Set Name. A dialog will open in which the user can
enter a new name for that entity. The software designation will be appended with the user-assigned name; for exam-
ple, Part_2 is renamed electrode2, so it would appear in the Geometry Browser as Part_2 (electrode2). Note that the
entity type and number cannot be changed.
The Set Name dialog also has a drop-down menu, in which the user can select any previously defined name and apply
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it to the desired entity. This drop-down menu can be used to ensure that names are spelled consistently.
The Clear button in the Set Name window can be used to delete a user-assigned name on any entity.
Naming entities or clearing name entities can be done on a single or multi selection. Use the Ctrl key to select more
than one entity, and then select Set Name. This functionality can be used to name several faces at once.
An entity’s name can also be changed from the Properties window. If the user selects an entity, and then right clicks
and selects Properties, the window that opens will have a name field, as shown below:
Enter user name in this field
5.6.1: Parts
Part names are attached to both the Mesh Model and the Solid Model (if it exists). In addition to the ID name, every
part has a name that is based on its layer name assigned in process file. The part name is displayed as
"Part_ID(Name)", e.g. "Part_3(beam)".
Part names can be assigned from the Solid Model or Mesh folder. The user can also multi-select parts and assign the
same name or clear all of their names.

5.6.2: Faces
Face names are attached to both the Mesh Model and the Solid Model (if it exists), but face names can only be
assigned from the Mesh folder. Any user-assigned names will be preserved even if the model is remeshed.
If no user name is assigned to the face, the Geometry Browser will display a "Face_ID", e.g. "Face_3". If the user has
assigned a name to a face, the Geometry Browser will display "Face_ID (Name)", e.g. "Face_3(bottom)".
The user can multi-select faces and assign the same name. Faces that have the same user-assigned name are called
patches. Each face or each set of faces having the same name maps to a patch in the solver boundary conditions dia-
logs. Only those faces that have user-assigned names appear in the boundary condition drop-down menus.
Do not use the string "Patch_" when assigning face names. The solvers interpret the faces as patches, so if faces are
assigned names that start with "Patch_", for example "Patch_12" or "Patch_myPatch," the solvers will treat them as
default patch names, and these faces/patches will not show up in the solver’s BC setup windows.
Naming Faces on the Same Plane

If a user has numerous faces on a plane that need to have the same name, he/she can use the Select Faces By Plane
option to insert a plane and then select all the faces on that plane. For more information on this functionality, see page
U5-28.
5.6.3: Conductors/Dielectrics
If a mesh exists, the Geometry Browser displays a Conductors/Dielectrics folder. Conductors and dielectrics are auto-
matically generated when layers are added to the Mesh folder modified. As with other entities, the user can rename
these entities, but it is best to name them after the mesh has been created.
A dielectric part and a conductor part cannot have the same name; if a dielectric is given the same name as a
conductor, it will be considered a conductor.
Conductor or dielectric designations are derived from the part’s dielectric material property (see page U3-19). Parts
that touch and have one conductor material type are designated as a single conductor. Part conductivity can be
changed by right clicking on a part and selecting Properties. In the window that opens, change the Analysis Option
Conductor or Dielectric assignment. Any change in conductor status is automatically reflected in the Conductors/
Dielectrics folder. Conductors with the same name are connected in MemElectro.

5.7: Meshing
The solid model tool uses the 2-D layout and process characterization information to build a solid model. Once the 3-
D model is created, the next step in physical design is mesh generation. CoventorWare uses finite element and bound-
ary element techniques for solving the differential equations of each physical domain in the problem. The differential
equations are solved by discretizing the 3-D model into a mesh, which consists of a number of elements, each with a
specified number of nodes. The mesh tool, accessed from within the Preprocessor, creates the finite elements or
boundary elements necessary for simulation. When the meshing is complete, this information is exported for use by
the rest of the software for additional conversion, application of boundary conditions, and computation by the solvers.
In the Geometry Browser, the user selects the layers that are of interest for 3-D analysis and right clicks to add these
layers to the Mesh Model folder. If two or more layers touch, the software merges these layers into a single merged
layer that contains internal faces at the intersection of the previously separated layers. This merging of layers enables
the mesher to generate a mesh that is continuous across the internal faces. In the Mesh Model folder these layers are
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referred to as regions. Different mesh types can be set for different regions.
After adding the desired layers to the Mesh Model folder, the user right clicks to select the Mesher Settings. The
Mesher Settings control the meshing algorithms. The user must edit and apply Mesher Settings before invoking the
Generate Mesh action. The mesher discretizes the model into smaller volumes suitable for 3-D numerical analysis.
Mesher settings on parts, model faces, edges, and vertices can also be set to achieve local mesh refinements.
A mesh contains one or more elements. A element contains four or more element faces. Element faces are bordered
by three or more element edges. Element edges are terminated by two nodes.
Because meshing is only required if the model will be simulated with the Analyzer solvers, detailed reference infor-
mation on the Preprocessor’s meshing functionality is found in the Field Solver Reference, beginning on page R2-1.
5.8: Importing and Exporting a Model

The user has the option of creating a solid model or a mesh in a third-party program, and then importing that model
into the Preprocessor. The user can also export a solid model or a mesh from the Preprocessor. To import or export a
model from within the Preprocessor, click the standard Open File icon, or from the File menu, select Open. The Con-
sole will become active, which has icons for importing and exporting models:

The Import icon can be used to import solid models in .sat (up to and including version R22), or as a mesh in
.stl, .unv, .cdb, or .rst format. Note that the last two file extensions are used for ANSYS files; see page R2-31 of the
Field Solver Reference for more details. It can also be used to import a .gbak file from another project or from another
platform. An imported model retains its original name; if it has the same name as a model already existing in the data-
base, an error window appears that prompts the user to rename the original model before importing the new one. The
software will also warn the user if the import failed or if the imported gbak had no models.
The Export icon can be used to export a CoventorWare solid model or mesh to a format that can be used by a
third-party program. The user has the option to export in .gbak, .sat, .stl, .cdb, or .unv formats; see page R2-31 for
more information on exporting an mesh. The material properties of a selected model can also be exported as an MPD
file. Exported files will not appear in the Database Browser window.
The default vertex tolerance when exporting a .sat file is 1e-06 μm, which means the largest dimension in the
model should not exceed 1e4 = 10,000 μm. If the model has dimensions larger than 1e4 μm, accuracy will be lost.
The Solid Modeler's default accuracy can be changed by setting the environment variable
COV_SET_SPARESABS, which can have a value between 1.0e-10 to 1.0. For more information on setting an
environment variable, see page U1-43.
5.9: Icons
Equivalent Menu Keyboard
Icon Function Description
Function Shortcut
Open Model Opens the Database Browser to display models File > Open Ctrl + O;
and mesh models available in the current project Alt + F + O
Save Model Saves the current model File > Save Ctrl + S or
Alt +F + S
Hide Selection Click on entity to select, then click on icon Edit > Hide Selection Shift + H;
Alt + E + H
Show Selection Click on a hidden entity in the Geometry Edit > Show Selection Shift + O;
Browser, and then click on icon Alt + E + O
Layer selection Allows the user to select layers in the Edit > Selection Mode > none
mode Preprocessor canvas Layer
Part selection Allows the user to select parts in the Edit > Selection Mode > none
mode Preprocessor canvas Part
Conductor Allows the user to select conductors in the Edit > Selection Mode > none
selection mode Preprocessor canvas; only active when layers Conductor
have been added to the Mesh folder
Face selection Allows the user to select faces in the Edit > Selection Mode > none
mode Preprocessor canvas Face
Patch selection Allows the user to select patches in the Edit > Selection Mode > none
mode Preprocessor canvas Patch


Function Shortcut
Edge selection Allows the user to select edges in the Edit > Selection Mode > none
mode Preprocessor canvas Edge
Vertex selection Allows the user to select vertices in the Edit > Selection Mode > none
mode Preprocessor canvas Vertex
Rotate model Click icon to rotate the model using the mouse View > Rotate Alt +V + R;
Ctrl + Right
click + drag
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Pan model Click on the icon, and then click and drag the View > Pan Alt +V + P;
model to desired location Alt + Right
click + drag
Zoom mode Click on icon to zoom on the entire model View > Zoom Alt + V + Z;
Shift +
Right click
+ drag
Fit to Window Adjusts the view so that the entire geometry still View > Fit to Window Ctrl + F;
fits within the canvas Alt + V + F
Zoom to Click on this icon to zoom in on the selected View > Zoom to none
selection entity Selection
Rubberband Click on icon to drag a rectangle around the area View > Rubberband Alt + V + U
zoom mode to zoom Zoom
Oblique View Click on the icon to get an oblique (3-D) view of View > Orientation > Alt + V + O
the model, or click on the drop-down arrow to Oblique, XY+ view, XY-
choose other options: XY+ view, XY- view, XZ+ view, XZ+ view, XZ-
view, XZ- view, YZ+ view, or YZ- view view, YZ+ view, YZ-
view
Previous View Click on this icon to return the model view to the View > Previous View Ctrl + B
previous state before the last model
manipulation
Next View Click on this icon to return to the view before View > Next View Ctrl + N
Previous View was invoked
Model/mesh This icon only becomes active when a region, Tools > Quality Query Alt + T + Q
quality query layer, or part is selected; click on the icon to
open the Quality Query dialog; see page U5-45
for details on how to use this window
Clear quality Click on the icon to clear the highlights in the Tools > Clear Quality none
query highlight Geometry Browser and Canvas that resulted Query
from a Quality Query
Add a Plane Click on icon to add a plane or click on the drop- Solid Model > Insert none
down arrow to select three other options: Add a
Plane, Add a Wedge Region, or Add a Block
Render in Click on the icon to render the model in none none
wireframe wireframe view; see page U5-20 for more detail


Function Shortcut
Cross Section Click on this icon to create a cross section view View > Cross Section none
View of the model; rotate the cross-section plane for
different cross section views; see page U5-21 for
more detail
Render the Click on the icon to render the model shaded none none
scene shaded (default); see page U5-20 for more detail
Generate mesh After specifying the meshing settings, click on Mesh > Generate Mesh Alt + M + G
this icon to create the mesh
Delete mesh After creating a mesh, you can choose to delete Mesh > Delete Mesh none
it using this icon; this function only deletes the
mesh, not the part that is meshed
Tape measure Click on this icon to measure the distance Tools > Tape Measure none
between two points; click and drag over the area
to be measured
Measure Click on this icon to measure the distance Tools > Measure none
distance between two vertices Distance
Redline markup Click on this icon to draw a red line around Mesh > Markup none
highlight points of interest on the canvas; if you
rotate/pan/translate a model, the redline markup
disappears
Stop This icon only becomes active during the none none
meshing process; click on this icon to stop the
mesh generation
5.9.1: Z-Scale Drop-Down Menu

The Z-Scale setting controls the model scale in the Z direction. Adjusting this menu may make it easier to see features
and select faces. The user has the option of selecting a number from the drop-down menu or entering a number in the
field. Figure U5-4 shows a model with the default Z-Scale and a Z-Scale set to 5. With the higher Z-Scale, the sides
of the beam would be easier to select.
Figure U5-4 Z-Scale Adjustment

Z-Scale = 1 Z-Scale = 5

5.9.2: Cross Section View

The Cross Section View, available from the Cross Section View icon , allows the user to view the interior of a
model. When the function is activated, a cross section plane is created, which can then be moved or rotated in using
the arrow handles. The illustrations below show how this functionality could be used:
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The original view of the model hides the interior features Activating the Cross Section tool creates a default XZ
cross section, revealing the interior features of the model
Use the arrow handles to rotate the cross section plane
The Cross Section tool can be used on a solid model or a meshed model, including models that have been imported.
Use the XY+, XY-, XZ+, XZ-, YZ+, or YZ- views to snap the cross section plane to a coordinate plane. Clicking on
other icons or clicking on an entity in the Geometry Browser deactivates the Cross Section tool.

5.9.3: Wireframe Rendering

This icon controls the model’s display. This display option shows only the model edges. Below is an example of this
type of rendering.
5.9.4: Shaded Rendering

This icon controls the model’s display. This option renders the surfaces of the model shaded, and therefore visible, as
seen below:

5.9.5: Adding Entities

The Preprocessor allows the user to add a plane, a wedge, or a block to a model. A plane can be used to create a sym-
metry plane, a partition plane, or a cross-section view. A wedge can be used to speed up simulations by allowing the
user to simulate part of a model. The block can be used to partition a model. The entities are first defined in the Solid
Model folder, and the plane and wedge entities can be added to the Mesh Model folder. This section details how to
use these entities.
Add a Plane
The Add a Plane option can be used to create a plane for partitioning, for creating a symmetry plane, or for creating a
cross-section view. When the user selects the Add a Plane option, a plane appears on the canvas, oriented in the XZ
plane by default. Handles also appear that allow the user to rotate or move the plane. The plane is also added to the
Solid Model folder, as shown below:
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Note that more than one symmetry plane can be inserted for a model. If there are more than two planes, not more than
two of those planes can be parallel, and those two parallel planes must be perpendicular to any other planes. The two
parallel planes must also have normals that are opposite to each other.

Plane Properties
Right clicking on a plane on the canvas or in the Geometry Browser, and then selecting Properties opens the dialog
shown below. This dialog can be used to assign a name to a plane or to manually edit the plane’s normal direction or
position. Note that the normal or position can also be changed by clicking on the arrow or handles of the plane, and
then dragging, but this dialog allows the user to enter precise numbers.
 Name
This field allows the user to assign a unique name to the plane. If no name is assigned, the field displays UNDE-
FINED.
 Normal Direction
This field includes a drop-down menu with the following choices: Positive X, Negative X, Positive Y, Negative Y,
Positive Z, Negative Z, and Arbitrary. When one of the X, Y, or Z directions are chosen, the field underneath the
Normal Direction field automatically displays the vector normal. If the Arbitrary option is selected, the user may
enter the vector normal.
 Plane Position
This setting has two parts: first the user selects the position to use when defining the plane (Corner or Center),
and then the user defines that corner or center coordinate in the field below.
 Direction Size
These fields are labeled according to which Normal Direction is selected. For example in the graphic above, Pos-
itive X is selected in the Normal Direction field, so these fields are labeled Y-direction Size and Z-direction Size.
If the Arbitrary option is selected, these fields are labeled Width and Height.
If the user does not enter any sizes in these fields, the sizes are calculated automatically based on the model’s
bounding box.

Using a Plane as a Cross-Section Viewer

The illustrations below show how this functionality could be used as a cross-section viewer:
Figure U5-5 Cross-Section View with Plane

Right click on the plane, and select Rendering Options.
In the dialog that opens, activate the Clipping option.
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Using a Plane to Partition
A plane can be used to partition a solid model. After adding a plane, the user can position it using the plane handles or
by editing the coordinates in the Plane Properties dialog. To precisely align a plane, the user can also select three ver-
tices using the Vertex selection mode and the Ctrl key. The created plane will be defined by these vertices. Then from
the Geometry Browser or from the canvas, the user selects the plane and the layer or layers to be partitioned, and then
selects Solid Model > Partition.
Note that if displayed vertex coordinates are prepended with "Tolerant vertex", it means that this particular vertex
is determined with a looser tolerance than the default; therefore, the displayed coordinate is less exact than the
default accuracy. This maybe important when users copy and paste those coordinates to create a partitioning plane.
Partitioning with such a plane may fail.
Note that a model can only be partitioned if there are no entities in the Mesh Model folder. If a layer or layers have
been partitioned, and then the partitioned layers and the partition plane are added to the Mesh Model folder,
the partitioned layers that are on the side of the plane that the normal points towards are not added to the
Mesh Model folder, and will remain in the Solid Model folder. The Preprocessor will also generate an error mes-
sage warning the user that the layers on the normal side of the plane will not be added to the Mesh Model folder.
For an example of how to use a plane for partitioning, see page U5-7.
Creating a Symmetry Plane

When a plane is added to the Mesh Model folder, it automatically becomes a symmetry plane. The plane normal
defines which side of the model is cut or preserved. When a symmetry plane is added to the mesh model, it removes
the part of the model that the normal points towards; that part of the model will not be in the Mesh Model folder
and will no longer be available in the Solid Model folder. The symmetry plane normal ends up pointing out of the
model. After it has been added to the Mesh Model folder, the location and size of a symmetry plane can not be
changed.
Note that more than one symmetry plane can be inserted for a model. If there are more than two planes, not more than
two of those planes can be parallel, and those two parallel planes must be perpendicular to any other planes. The two
parallel planes must also have normals that are opposite to each other. For example of using multiple symmetry
planes, see page R3-31 of the Field Solver Reference.
The symmetry function is illustrated in Figure U5-6:

Figure U5-6 Using a Plane to Create Symmetry
Symmetry plane created

Plane in Solid Model folder in Mesh Model folder
Symmetry plane created

Plane in Solid Model folder in Mesh Model folder

Mesher Settings
A plane can only be meshed with the Surface mesh algorithm. The triangle, quadrilateral, or mixed element types can
be used. For more information on the Surface mesher, see page R2-22 of the Field Solver Reference.
Add a Wedge Region

A wedge region can be used to simulate a small portion of a cylindrically symmetric model, therefore significantly
decreasing simulation time. When a wedge is added to the Mesh Model folder, only the portion of the model enclosed
by the wedge region appears. The wedge becomes a cyclic symmetry plane, and during simulation, no symmetry
boundary conditions need to be applied to the model created by the wedge. Note that the wedge entity exposes the
two planar faces of the wedge, but not the section of the cylindrical surface that connects them. This surface will cut
away useful parts of the model if the wedge radius is not sufficiently large. When the wedge is the selected entity, the
outlines of the cylindrical face are visible so model intersection can be checked easily.
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Only one wedge region may be present in a model, but it can be combined with one symmetry plane. For an example
on how to use a wedge in simulations, see page R4-108 of the Field Solver Reference.
When the user selects Add a Wedge, the dialog below opens:
 Name
This field allows the user to assign a unique name to the plane. If no name is entered, the field displays "UNDE-
FINED."
 Rotation Axis
The default rotation axis is Z.
 Position
This setting defines the position of the rotation axis. First the user selects the position to use when defining the
plane (Corner or Center), and then the user defines that corner or center coordinate in the field below. Note that
the position is on an edge, not on a plane.
 Normal Direction
This field includes a drop-down menu with the following choices: Positive X, Negative X, Positive Y, Negative Y,
Positive Z, Negative Z, and Arbitrary. When one of the X, Y, or Z directions are chosen, the field underneath the
Normal Direction field automatically displays the vector normal. If the Arbitrary option is selected, the user may
enter the vector normal.
Note that the normal direction must be perpendicular to the rotation axis, choices that are not allowed appear
greyed out in the drop-down menu.

 Radius, Height
These fields can be left blank; the software then will calculate these dimensions automatically.
 Angle
This setting defines the sectional angle. The value entered must satisfy 360/value = integer.
Mesher Settings
A wedge can only be meshed with the Surface mesh algorithm and the triangle element type. For more information
on the Surface mesher, see page R2-22 of the Field Solver Reference. The geometry created with the wedge can be
meshed with any mesher, but a wedge region cannot be used with a model that has any regions meshed with shells.
Add a Block
In the Solid Model folder, the block entity can be used to partition (see page U5-9 for an example). When the user
selects Add a Block, the dialog shown below appears:
 Name
This field allows the user to assign a unique name to the plane. If no name is entered, the field displays "UNDE-
FINED."
 Corner/Opposite Corner
These field are defined by X,Y,Z coordinates. If the user does not enter any sizes in these fields, the sizes are cal-
culated automatically so that the block encloses the entire model.
After a block has been added, it becomes an entity in the Geometry Browser. The user can right click on the block in
the Canvas or in the Geometry Browser to access and edit the block properties, to hide or show the block, to name it,
to delete it, or to edit its rendering options.

5.10: Menu Options

This section documents the options available from the Preprocessor’s menu bar. Each menu bar function is described,
and any alternate method of performing the same function is listed.
5.10.1: File
This menu option is used for file management.
Open
This option opens a project browser that shows all models and meshes in the current project database. The equivalent
keyboard shortcuts are Ctrl + O or Alt + F + O. See page U5-15 for more details on opening models in the Preproces-
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sor.
Close
This option closes the current model/mesh, but leaves the Preprocessor window open. The equivalent keyboard short-
cut is Alt + F + C.
Save
This option saves the current model or mesh. This option is disabled if the user loaded a solid model and added one or
more layers to the mesh. The equivalent keyboard shortcuts are Ctrl + S or Atl + F + S.
Save As
This option allows the user to save the current model or mesh with a different name. The equivalent keyboard short-
cut is Alt + F +A.
Append
This option allows the user to merge one model with another. The user selects the Solid Model or Mesh option, and
dialog opens that launches the Database Browser. The user can select any model or mesh in the current project or
import a device from another project. The equivalent keyboard shortcuts are Alt + F + P + S (for a solid model) and
Alt + F + P + M (for a mesh)
Note that solid models cannot be merged with mesh models. For more information on this option, see page U5-12.
Save Image
This options allows the user to save the image displayed in the Preprocessor canvas. The user has the option to save
the image as a tiff, jpeg, or HOOPS Stream File (.hsf extension). The image can then be imported into other pro-
grams. The equivalent keyboard shortcut is Alt + F + I.
Exit
This option closes all Preprocessor windows. The equivalent keyboard shortcut is Alt + F + X.
5.10.2: Edit
Selection Mode
This function determines which type of entity can be selected in the Canvas window. The user can select one of these
options: Layer, Part, Conductor, Face, Patch, Edge, and Vertex. Each of these options has an equivalent icon. The
equivalent keyboard shortcut is Alt + E + S; this shortcut opens the entity options menu.

If you are having troubling selecting a vertex or an edge, use the Rubberband Selection function (click and drag) to
draw a box around the area surrounding the vertex or edge, and it will then be selected automatically.
Note that making a selection in the browser changes the selection mode (see toolbar) to the type of the selected entity.
If you have a complex model and you only want to select objects in a certain part, hide all other parts using the
Hide Selection option. Selection will then be much faster because hidden parts are ignored in the selection
calculation.
Select All
This option allows the user to select by faces, edges, or vertices. It becomes active when an entity in the Solid Model
or Mesh Model folder is selected. The Select All submenu is filtered according to what type of entity is active in the
Canvas. For example, if a region, layer, or part is active, the Edit > Select All has the Faces, Edges, and Vertices sub-
menus, and if Faces selected, only the faces in that region, layer or part are highlighted. If a face is active in the Can-
vas, the Edit > Select All will only include the Edges or Vertices submenus, etc.
Select Faces By Plane

If a user has numerous faces on a plane that need to have the same name, he/she can use the Select Faces By Plane
option to insert a plane and then select all the faces on that plane (face centers have to be on the plane). Selecting a
solid or mesh model entity (higher than a face) enables the Edit > Select Faces By Plane menu. The user can insert a
plane by parameters, by selected vertices, or by points entered in the plane.
The Selection Plane Tolerance setting, which is available in the Tools > Options > Selection dialog, affects this func-
tion. The tolerance determines the precision of the selection:
 The face centers have to be within the plane (within that tolerance).
 The cross product of the face and plane normals has to be less than that tolerance (each of the three coordi-
nates of the cross product has to be less than that tolerance).
Hide Selection
This option hides the entity selected in the Geometry Browser or the Canvas. The equivalent keyboard shortcuts are
Alt + E + H or Shift + H.
Show Selection
This option makes the entity selected in the Geometry Browser or the Canvas visible. The equivalent keyboard short-
cuts are Alt + E + O or Shift + O.
If you have hidden several entities, and would like to make these entities visible without clicking on each one in the
Geometry Browser and then selecting Show Selection, you can click on an entity that is higher in the Geometry
Browser hierarchy and then right click and select Show Selection. All entities that are in the lower level of that
entity’s hierarchy will be shown. For example, if you have hidden several faces, and what to make them all visible,
right click on the part or layer that contains those faces, and all the previously hidden faces will appear.
Delete
This option only becomes available if the selected entity can be deleted. Added planes, blocks, and wedges can be
deleted. Other entities cannot be deleted. The equivalent keyboard shortcuts are Alt + E + D or the Delete key.

Rendering Options
Choosing this option from the Edit menu opens the Rendering Options dialog window. This window can also be
opened using the keyboard shortcuts Alt + E + R or Shift + R, or by right clicking on an entity in the Geometry
Browser. The Rendering Options window determines how an entity appears when it is visible (e.g. whether edges,
faces, or both are rendered, their color, transparency, etc.). This option is only active in layer, part or face selection
mode. You cannot set rendering options on edges or vertices.
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 Show
This option allows the user to select which entities are displayed. The available options for showing or hiding are
determined by which type of entity is selected. For example, if a part entity is selected, the user has the option to
show or hide model faces, model edges, model vertices, element edges, and internal edges. If a face entity is se-
lected, the user has the option to show or hide only the model faces. There are no rendering options for edges and
vertices.
 Color
Clicking on the colored button opens a color palette. The user can select any color from that palette and that color
will be applied to the entity that is selected. For example, if the user clicks on a part, and selects a different color
from the Rendering Options color palette, that color will be applied to only the part that is selected.
 Transparency
This option allows the user to set the face transparency of the selected entity. If 0 is selected, the entity will appear
as a solid. If 100 is selected, the entity will appear completely transparent.
Whatever rendering options are applied to an entity, they stay applied whether the entity is visible or not. Note that
overall visibility is not part of the rendering options except for faces. When you save a model, any rendering options
you have set are also saved.
Set Name
This option allows the user to change the name of the selected entity. The user can also access the Set Name function
by right clicking on an entity in the Geometry Browser or in the Canvas, and then selecting Set Name. The equivalent
keyboard shortcuts are Alt + E + N or Shift + N. The Set Name option is explained in detail on page U5-13.

Properties
The Properties dialog window is used to view and edit properties of selected entities. The options that appear in the
Properties window are determined by the selected entity. The window can be opened from the Edit > Properties
menu, with the Alt + E + P or Shift + P keyboard shortcuts, or by right clicking on an entity and selecting Properties.
No matter which entity is active, the Properties dialog window displays the entity ID number, which is an internal
number assigned by the Preprocessor, and the Name field. If the user has renamed the entity, that name will appear in
the Name field. If no user-supplied name is assigned to an entity, that field remains blank.
The window also displays any relevant geometry or mesh statistics.
Region Properties
The Region entity only exists in the Mesh Model folder. Figure U5-7 shows a typical Region Properties dialog for a
unmeshed and mesh model.
Figure U5-7 Region Properties Dialog

Region Properties accessed for an Unmeshed Model Region Properties accessed for a Meshed Model
Region properties take precedence over layer properties: changing any properties on a region entity will override
layer settings. Note that if a region has multiple layers with different material properties, e.g. one layer is a conductor
and another is set to be a dielectric, the material options and Analysis Options are greyed out.
 Material
This field displays that type of material assigned to the region. The type of material assigned is determined by the
process file. The user can change the material assignment in the window without affecting the process file. If the
user clicks on the icon to the right of this field, the Materials Editor opens. Any changes made in the Materials
Editor from this window will apply only to the model displayed in the Preprocessor; the default MPD file, ac-
cessed from the Materials Editor icon in the Solid Model Builder dialog, will not be changed. For example, if the
user changes the dielectric constant of a material from the Region Properties window, that dielectric constant
would only be valid for the active model. The dielectric constant for that material in any other model would not
be changed.

 Analysis Options: Conductor or Dielectric

This option allows the user to designate a layer as a conductor or dielectric. The default setting is determined by
the material’s dielectric constant value as it appears in the model’s assigned material database.
This designation determines whether or not the entity appears in the Conductors/Dielectrics folder. If an entity’s
status is changed from a dielectric to a conductor, or from a conductor to a dielectric, the Conductors/Dielectrics
folder is automatically updated.
 Analysis Options: Material Type
 Solid: This option includes the region in mechanical analysis.
 Fluid: This option designates the region as fluidic region.
The default setting for Material Type is based on the viscosity value for the current material from the model’s as-
signed material database; if viscosity is 0, the material is designated as a Solid, if viscosity is non-zero, the material
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is designated as a Fluid.
 Analysis Options: Suppress, except for MemElectro
This option removes the region from the input into the FEM solvers. Any region with this option selected will be
used only in electrostatic simulations, but not mechanical simulations.
Layer Properties
A typical Layer Properties dialog is shown in Figure U5-8:
Figure U5-8 Layer Properties Dialog

Layer Properties accessed from Solid Model folder Meshed Layer Properties
Layer properties take precedence over part properties: changing any properties on a layer entity will override part set-
tings. Note that if a layer has multiple parts with different material properties, e.g. one part is a conductor and another
is set to be a dielectric, the material options and Analysis Options are greyed out.
 Material
This field displays that type of material assigned to the layer. The type of material assigned is determined by the
process file. The user can change the material assignment in the window without affecting the process file. If the

user changes the dielectric constant of a material from the Layer Properties window, that dielectric constant would
only be valid for the active model. The dielectric constant for that material in any other model would not be
changed.
This option allows the user to designate a layer as a conductor or dielectric. The default setting is determined by
This designation determines whether or not the entity appears in the Conductors/Dielectrics folder. So when a con-
ductor entity is added to the Mesh Model folder, it is automatically added to the Conductors/Dielectrics folder. If
an entity’s status is changed from a dielectric to a conductor, or from a conductor to a dielectric, the Conductors/
Dielectrics folder is automatically updated.
 Solid: This option includes the layer in mechanical analysis.
 Fluid: This option designates the layer as fluidic layer.
This option removes the layer from the input into the FEM solvers. Any layer with this option selected will be
used only in electrostatic simulations, but not mechanical simulations.
Part Properties
The Part Properties dialog for a part in the Solid Model folder and for a meshed part are shown in Figure U5-9. Any
properties that you set for your model from this dialog are saved with the model description in the project database.
Figure U5-9 Part Properties

Part Properties accessed from Solid Model folder Meshed Part Properties

From the Part Properties window, the user can adjust several characteristics that affect simulation:
 Material
This field displays that type of material assigned to the part. The type of material assigned is determined by the
process file. The user can change the material assignment in the window, without affecting the process file. If the
user changes the dielectric constant of a material from the Parts Properties window, that dielectric constant would
only be valid for the active model. The dielectric constant for that material in any other model would not be
changed.
This option allows the user to designate a part as a conductor or dielectric. The default setting is determined by
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This designation determines whether or not the entity appears in the Conductors/Dielectrics folder. So when a con-
ductor entity is added to the Mesh Model folder, it is automatically added to the Conductors/Dielectrics folder. If
an entity’s status is changed from a dielectric to a conductor, or from a conductor to a dielectric, the Conductors/
Dielectrics folder is automatically updated.
 Solid: This option includes the part in mechanical analysis.
 Fluid: This option designates the part as fluidic part.
This option removes the part from the input into the FEM solvers. Any part with this option selected will be used
only in electrostatic simulations, but not mechanical simulations.
Face Properties
A typical Face Properties dialog is shown below. If this dialog is accessed from the Solid Model folder, the name field
will not be editable, and there will be no mesh information.

Edge Properties
A typical Edge Properties dialog is shown below. If this dialog is accessed from the Solid Model folder, the name
field will not be editable, and there will be no meshing information.
Vertex Properties
A Vertex Properties dialog is shown below. If this dialog is accessed from the Solid Model folder, the name field will
not be editable.
5.10.3: View
The items in this toolbar menu affect the Canvas display or manipulation.
Previous View
This option will return the model view to the previous state before the last model manipulation. For example, if the
last model manipulation was a rotation, this option will return the model to its unrotated state. It has the same func-
tion as the Previous View icon and the Ctrl + B keyboard shortcut.
Next View
If the Previous View option has been used, this option will allow the user to return to the view before Previous View
was invoked; in other words, it undoes the Previous View function. It has the same function as the Next View icon
and the Ctrl + N keyboard shortcut.
Select All
The option allows the user to select all the faces, edges, or vertices of a selected entity. This option makes it easier to
assign the same name to a group of faces or to refine mesh settings on a group of entities.

Rotate
This option allows the user to rotate the model using the left mouse button. Note that if the Automatic Spin option
available from Tools > Options > View is turned on, the model will continuously rotate until the user clicks on the
canvas. It has the same function as the Rotate icon and the Alt + V + R keyboard shortcut.
Pan
Selecting this option allows the user to move the model around the canvas using the left mouse button. This option
has the same function as the Pan icon , and the Atl + V + P keyboard shortcut.
Zoom
This option allows the user to zoom in or out on the model. This option has the same function as Zoom icon and
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the Alt + V + Z keyboard shortcut.
Note that for the Rotate, Pan, and Zoom options, there is an alternate direct mouse manipulation mode. With
these modes, a user can rotate, pan, or zoom without switching off a selection mode.
 For the Rotate option, use Ctrl + Right click + drag.
 For the Pan option, use Alt + Right click + drag.
 For the Zoom option use Shift + Right click + drag.
Fit to Window
The option adjusts the zoom level to maximize the model within the current Canvas; its function is equivalent to the
Fit to Window icon. The equivalent keyboard shortcuts are Alt + V + F or Ctrl + F.
Note that for this release, the Fit to Window option may not function properly if the Z scale is not set to 1.
Zoom to Selection
This option zooms the view so that the selected entity fills the Canvas. For example, if the user selects a face, and
then selects this option, the view will zoom to that face. This option has the same function as the Zoom to Selection
icon.
Rubberband Zoom
This option allows the user to select an area to zoom. The user selects this option and then clicks and drags to create a
bounding box that encompasses the area to zoom. The user can also use Rubberband Zoom icon or the Atl + V
+ U keyboard shortcut.
Orientation
This option orients the model in the Canvas window. The user has these options: Oblique, XY+ view XY- view, XZ+
view, XZ- view, YZ+ view, or YZ- view. Figure U5-10 shows three different views for the same device: the default
view, the XY plane from the +Z side, and the XY plane from the -Z side.
Each of these options can also be selected from the Oblique View icon drop-down menu. or accessed using
the Alt + V + O keyboard shortcut.

Figure U5-10 Orientation of Device

Oblique
XY+ view XY- view
Redraw
Occasionally, you may find that the Canvas displays information from previous operations that is no longer valid.
This option clears any of these artifacts.
5.10.4: Solid Model

The Solid Model tool operations are only active on layers in the Solid Model folder. Most of these options cannot be
selected if any layers have been added to the Mesh Model folder. The options in this menu allow the user to partition
or merge layers.
Insert
This option can be used to insert a plane, a block, or a wedge. Note that entities can be inserted if layers have been
added to the Mesh Model folder, but once added, they cannot be deleted. The equivalent keyboard shortcut is Alt + S
+ I.
Plane
The user has these options for inserting a plane: Default, Enter Parameters, Use Selected Parameters, or Enter
Points.
If the Default option is selected, the Preprocessor inserts a plane oriented in the positive X normal direction, with its
center at (0,0,0). The size of the plane is based on the model’s bounding box.
If the Enter Parameters option is selected, the Plane Properties dialog opens (see page U5-22). The user then has to
enter the normal direction and position of the plane.
To use the Use Selected Parameters option, first select three vertices using the Vertex selection mode icon and the
Ctrl key. When the Use Selected Parameters is then selected, the inserted plane is defined by those vertices.
The Enter Points option allows the user to enter any three points in the Canvas space to create a plane. This capability
makes it easier to partition complex geometries with sidewall angles, then apply an extrude mesh.

Block
The user has these options for inserting a block: Default, Enter Parameters, or Use Selected Parameters. If the
Default option is selected, the Preprocessor inserts a block that encompasses the entire device. If the Enter Parame-
ters option is selected, the Block Properties dialog opens (see page U5-22). The user then has to enter the coordinates
for the two corners that define the block.
To use the Use Selected Parameters option, first select two vertices that are in opposite corners using the Vertex
selection mode icon and the Ctrl key. When the Use Selected Parameters is then selected, the inserted block is
defined by those vertices.
Wedge
If the user selects the Wedge option, the Wedge Properties dialog opens (see page U5-25). The user has to define the
rotation axis and its position, the normal direction, and the angle. The wedge region does not have a default definition
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and cannot be defined by selected vertices.
Partition
This operation allows the user to partition layer(s) using a plane or a block. The user will create one of these entities,
select the layer(s) and the entity using the Ctrl key, and then select this menu item. The equivalent keyboard shortcut
is Alt + S + P. For more information on this functionality, see page U5-23.
Merge Layers
The operation allows the user to merge layers. It could be used to undo partitioning. The equivalent keyboard shortcut
is Alt + S + M.
See page U5-6 for an example of how to partition layers.
Layers cannot be merged with a plane, a block, or a wedge.
Delete Region
This option applies to the auxiliary regions created with the Add a Plane or Add a block menus. It is active only if one
of these regions has been selected in the canvas or in the Geometry Browser. The equivalent keyboard shortcut is Alt
+ S +D.

Statistics
This option opens a window for displaying the solid model statistics, including edge length, face area, and model vol-
ume statistics. These statistics will help the user to decide if the model is suitable for meshing. Meshing a model with
poor solid model features may result in mesh over-refinement and subsequently solution inaccuracies. Some symp-
toms of poor solid model features include
 excessive memory consumption when meshing, resulting from an unnecessary number of elements
 poor mesh quality (element aspect ratio, angles, huge spread of the element size spectrum)
 failures during mesh generation resulting from to near zero edge/face length/area model features.
In the Solid Model Statistics window, shown below, edge length, face area, and part volume statistics are reported
separately. The window displays the total number, and minimum, maximum, and average values for each of these
entities. All the metrics are computed in a histogram format where there are ten intervals between the minimum and
maximum values of the metric.
The edge length values reported in the window are Euclidian lengths and are computed between the end vertices. The
histogram demonstrates the size variation (gradation) throughout the mesh. Please keep in mind that all the edge
lengths, including the thin Z element edge lengths, are included in this metric. The edge length values are useful for
identifying small edges that would cause over-refinement in the mesh. The Statistics window has a separate entry for
the smallest edge location. This value and other edge length values can be used to determine optimal input into the
Small Edge Threshold field in the Advanced Mesh Settings window for the Extrude, Tetrahedron, and Surface mesh-
ers; see page R2-10 of the Field Solver Reference for more details.
Eliminating undesired solid model features in 3-D solid models is a very difficult task and may create topological
problems. The best way to eliminate small features in a solid model is to return to the Layout Editor and eliminate
them from the 2-D design. The Layout Editor has a check layout function that can be used to identify problem fea-
tures; see page L2-109 of the Layout Editor Reference for more details.
The equivalent keyboard shortcut for accessing the Statistics dialog is Alt + S + S.

Heal
When any model is loaded into the Preprocessor, it is automatically checked for topological or geometrical problems,
such as sliver faces, missing faces, duplicate vertices and edges, and leaky surfaces. If any problems are found, the
Preprocessor will display a dialog with information on how to troubleshoot the problems, and layers that have these
types of problems will be highlighted in red in the Geometry Browser. Solid models imported from third-party soft-
ware frequently have these types of problems. The Heal option, which only becomes available when there are such
problems, can be used to correct them. The equivalent keyboard shortcut is Alt + S + H.
The Quality Query feature (see page U5-45) can be used to identify the location and the size of sliver faces. For those
faces the Heal function cannot eliminate, the user can set the Small edge removal threshold in the Advanced Mesher
Settings window (see page R2-10). Otherwise the user must return to the layout file and fix the problem features.
The Solid Modeler detects sliver faces whose maximum distance among the long edges is smaller than the specified
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tolerance and that have at least one short edge and at most three long edges. A short edge is an edge whose length is
less than the specified tolerance; a long edge is an edge whose length is greater than the specified tolerance. A suit-
able tolerance is calculated based on the bounding box of the solid model layer.
The Quality Query highlights sliver faces in the Geometry Browser. These faces may be hard to see in the canvas.
To find the exact location of the sliver faces on the model, select one of the sliver faces in the Browser, then click
on the Zoom to Selection icon. The canvas view will zoom to the sliver face location.
Example
Below is an example of how the Heal tool can be used to correct a model’s topology. When the U-beam model is
opened in the Preprocessor, Layer2(poly) is highlighted as having errors:
To pinpoint the errors, we select this layer, and then select Tools > Quality Query. This dialog reports that the small-
est edge in the model is 0.00160258.

To locate these small edges, we enter 0 in the Lower Limit field and 0.002 in the Upper Limit field, and click on
Apply. The Preprocessor then displays any edges that fall within these limits:
To pinpoint the edge location, select it in the Geometry Browser, and then click on the Zoom to selection icon:

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To get rid of these sliver faces, select the Layer that includes these faces, and then select Solid Model > Heal (or right
click on the layer and select Heal). Layer2 is no longer highlighted, and zooming in on the area where the sliver face
originally was reveals a smooth surface:
The Heal tool will not work on all models, and it is best to identify the layout problems that caused the topological
errors. As shown in Figure U5-11, by zooming in on the problem area in the layout we see an overlap in the top
objects used to create the U-beam. This overlap created a tangent that led to the sliver face. To get rid of the overlap,
we could move one of the objects or use the Boolean Or function.

Figure U5-11 U-Beam Layout with Overlapping Objects
5.10.5: Mesh
Note that even though the Mesh menu options are accessible in the Preprocessor, mesh capabilities are not included in
the basic DESIGNER software suite. An additional license feature can be purchased for DESIGNER so that the user
can mesh a device. Below is a description of each menu option, but CoventorWare’s mesh settings and capabilities
are detailed in the Field Solver Reference, starting on page R2-1.
Add to Mesh Model

This operation adds selected layer(s) to the Mesh Model folder, converting them to mesh regions. Note that this
action does not generate the mesh, but rather indicates that the layer is available for meshing. The equivalent key-
board shortcuts are Alt + M + A or Shift + A.
Remove from Mesh Model

This operation allows this user to remove a region from a mesh. The user selects the region to delete, and then selects
Remove from Mesh. This operation cannot be applied to layers, parts, faces or edges. The equivalent keyboard short-
cut is Alt + M + R.
Split Region
If multiple touching layers are added to the Mesh Model folder with the Automatically merge touching layers option
checked, the layers will be placed into a single region. However, it is still possible to select one or more of these
touching layers and create a separate region so that independent meshing options may be used.
To split a region, select one or more of the component layers (use Ctrl key for multiple selections), and use the Split
Region command, available through both the Mesh menu and the right-click menu.
Note that if sequential Split Region commands are used, a layer that was previously split off may be merged back
with other touching layers. The way to prevent this is to use the multi-selection method. For example, if you have a
stack of six touching layers, and wish to split layer 2 and layer 5, then you should select both layers with a multi-
selection and apply the Split Region command once. If a region has more than one layer, this operation can be used to
split those layers into separate regions so that different mesher settings can be applied to them. The user must select
the layers to be split, and then select this option.

Note that only the layers selected will be split, even if they touch another layer. For example, if you have four layers
that are all touching one another, when you drag them to the Mesh Model folder, they will be merged into one region.
If you select two layers to be split, the result will be two regions. In the example below, all four layers are touching, so
they belong to one region. After selecting two layers, and then selecting the Split Region, there are two regions.
Figure U5-12 Splitting a Region
Join Regions
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This option allows you to join two regions. You can use this option to join layers that do not touch; then you could
apply one meshing type to all the layers. To use this option, select the two regions that are to be joined, then select
Join Regions from the Mesh menu.
Automate MemMech Links

If there are two or more regions that share faces, this option can be used to automatically name the matching faces.
This option can only be used from the Mesh folder. It becomes active when the user selects two regions that share
faces. The names will be appended with a master or slave designation, with the face with the larger area designated as
the master. To view the names, expand the Region tree in the Geometry Browser.
When this option is activated, the MemMech and MemElectro LinkageBCs dialog will prompt the user to add the
pair(s) of faces to the dialog. Note that if the user changes the name of the automatically assigned faces, the Linkage-
BCs will not prompt the user to add the pairs. For more information on the LinkageBCs dialog, see page R4-147 of
the Field Solver Reference.
In the example below, the hinges are partitioned from the mirror so that a finer mesh can be applied to the hinges.
Then the hinges and the mirror are selected, and the Automate MemMech Links option is invoked. The hinge faces
that touch the mirror are assigned a name with the slave suffix, and the faces on the mirror are assigned a name with
the master suffix. For more information on this example, see the section beginning on page T3-15 of the MEMS
Design and Analysis Tutorials.

Figure U5-13 Automating MemMech Links
Hinge was
partitioned
from mirror
Master faces are on Region 2
Mesher Defaults
This option can be used to set global mesher settings for all layers. Choosing this option opens the standard Mesher
Settings window. The user can then select any mesh type, and it will be applied to all the regions in the model. The
user can set the meshing type and dimensions for all regions, or can set a default mesh type for all regions, and then
set the dimensions for each region individually. Note that mesher default settings apply only to newly created or mod-
ified regions; they will not be applied to previously meshed layers.
The mesher settings selected from this menu option can be overridden at any time.
Mesher Settings
This option opens the Mesher Settings dialog. The user can select the mesh type and other meshing control parame-
ters for a selected entity. The user can also access this option by selecting an entity, and then right clicking to select
the Mesher Settings option. The equivalent the keyboard shortcuts are Alt + M + M or Shift + M.
Clear Mesher Settings

This option clears the mesher settings on selected entities and on all their sub-entities. The user can also access this
option by selecting an entity, then right clicking to select the Clear Mesher Settings option. The equivalent keyboard
shortcut is Alt + M + C.
Generate Mesh
This option has the equivalent functionality of the Generate Mesh icon. Selecting this menu item will generate
a mesh for all the mesh regions. No mesh will be created for those regions that have the Generate Mesh check box
deselected in the Mesher Settings dialog. The equivalent keyboard shortcut is Alt + M + G.

Delete Mesh
This option has the equivalent functionality of the Delete Mesh icon. Selecting this option deletes the mesh
from all regions. Note that this option does not delete any mesher settings.
Mesher Log
This option opens the mesher log window. This log window reports meshing progress and any meshing problems.
Automatically Merge Touching Layers

This option allows automatic merging of touching layers when they are dragged from the Solid Model folder to the
Mesh folder. This setting is turned on by default. If the user unchecks this option, all layers added to the Mesh folder
are designated as separate regions, regardless of whether or not they are touching, and there will be no continuity
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through the connected geometry.
Note that if this setting is turned off, it will remain turned off during the current Preprocessor session, regardless of
what model is active. But if the Preprocessor is closed, the next time it is opened, this setting will be turned on.
5.10.6: Tools
Transform
This option opens the Transform dialog. The dialog setup options will vary, depending whether a solid model or mesh
has been selected and on the type of transform. The equivalent keyboard shortcut for opening this dialog is Alt +T +
T. See page U5-11 for information about solid model transforms, or page R2-35 of the Field Solver Reference for
details on mesh transforms.
Quality Query
The Quality Query function is used to investigate the quality of a model or mesh. Entities that meet the user’s chosen
criteria are highlighted on the Canvas and in the Geometry Browser. A solid model quality query investigates the dis-
tributions of edge lengths, face areas, part volumes, and sliver faces. This type of query can be done on a solid model
or a meshed model. A mesh quality query investigates aspect rations, corner angles, edge lengths, and sliver faces.
This type of query can be done on both surface and volume meshes.
Solid Model Quality Query

A solid model quality query can be run on the entire Solid Model folder, on an individual layer or part, or on multiple
selections of the same type of entity. The user first selects the entity, and then selects the Quality Query option or the
equivalent keyboard shortcut Alt + T + Q. The window shown below opens:

Controls to set
user criteria
The user first selects a metric type from the drop-down Metric field, and then sets a lower and upper limit using the
slide controls or by entering the numbers in the fields beside the controls. Both fields must be set. When the user
clicks on Apply, the Quality Query dialog reports the percentage of the selected entity that fall within the lower and
upper limits compared to the total number of that entity in the solid model. In the Preprocessor window, the entities
that fall within the limits are highlighted in the Geometry Browser and the Canvas. Note that clicking on OK applies
the quality query criteria, but closes the dialog; the entities remain highlighted until the user clicks.
The Clear button clears the highlights in the Preprocessor window. The Cancel button closes the dialog without exe-
cuting the query.
The Sliver Faces metric only appears if the entire Solid Model folder is selected, if one or more layers are selected
from the Solid Model folder, or if a region in the Mesh Model folder is selected. When the user selects Sliver Faces as
the metric, the Quality Query appears as shown below:
The user enters a maximum value in the Threshold field, and then clicks on Apply. Any face that falls below this
threshold value will be highlighted in the Canvas and the Geometry Browser, and the number of sliver faces will be
reported in the Quality Query dialog (Sliver Count).

Mesh Quality Query

A mesh quality query can be run on the entire Mesh Model folder, on an individual region, layer or part, or on multi-
ple selections of the same type of entity.
Surface mesh and volume mesh statistics are reported separately. The user can select which domain to query using the
radio buttons at the top of the window. Note that a model query can be run on a mesh entity.
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The window reports the number of elements, the number of entities created, and the average, minimum, and maxi-
mum values for each dimension or entity. The statistics are also computed in a histogram format, where there are ten
intervals between the minimum and maximum values. The following metrics can be selected for the Quality Query:
 Aspect Ratio: The ratio of the maximum to minimum bounding box edge lengths of an element. For isotro-
pic computations, low aspect ratio elements are preferred.
 Corner Angles: In 3-D elements, the angles are computed between the faces of each edge, e.g., for a brick
element, twelve angles are computed. In 2-D elements, the angles are computed between the edges of a face.
Four angles are computed for a quadrilateral element. Avoid corner angles that are close to 180 degrees
because they affect the accuracy of the simulation.
 Edge Lengths: The edge length is the Euclidian length and is computed between the end vertices. The histo-
gram demonstrates the size variation (gradation) throughout the mesh. Please keep in mind that all the edge
lengths, including the thin Z element edge lengths, are included in this metric.
The lower and upper limit controls and the buttons functions are the same for the mesh quality query and the solid
model quality query. When the user clicks on Apply, the percentage of entities that fall within the chosen criteria is
displayed in the bottom of the dialog and the actual entities are highlighted in the Canvas.

Clearing Quality Query Highlights

When the user runs a query, the entities that fall within the selected criteria are selected in the Geometry Browser and
the Canvas, and they will remain selected until the user clears them. To clear the highlighted entities, the user can
click on the Clear quality query highlight icon or can click on Clear in the Quality Query dialog.
Example
Figure U5-14 shows the result of a volume mesh quality query of mesh elements with corner angles between 36.56
and 65.66. When the user clicks on Apply, only the elements that fall within the specified range are displayed.
Figure U5-14 Mesh Quality Query of Corner Angles
Tape Measure
This tool measures the distance between any two points on a model. Select this option from the Tools menu, or click
on the Tape Measure icon (third icon from the right). Click and drag from one point anywhere on the model to any
other point on the model. The distance between this two points (in microns) is reported in the status field below the
icon bar. The points chosen do not have to be vertices, but can be any coordinates on the model.

 Note that the Tape Measure tool will not work if the Z Scale is set to any number other than 1.
 The Tape Measure tool cannot be used on an imported model.
Measure Distance
This tool measures the exact distance between two vertices. Select this option from the Tools menu, or click on the
Measure Distance icon (second icon from the right), and then click on any two vertices in your model. The XYZ
coordinates of each vertex and the distances (in microns) between the two vertices are displayed in the status field
beside the Z-Scale, as shown in Figure U5-15:
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Figure U5-15 Using the Dimension Tool
XYZ coordinates
of the vertices,
Vertices selected by clicking on the model and the distance
between them
If you are having troubling selecting a vertex, use the rubberband selection function (click and drag) to draw a box
around the area surrounding the vertex. The vertex will then be selected automatically.
Note the following behaviors:

 Clicking on a vertex that is already selected will unselect it. Clicking on it again will select it again (like a
toggle).
 If two vertices are selected and you select a third vertex, the first selected vertex will be unselected automati-
cally and the distance between the previously selected second vertex and the newly selected third vertex (now
it becomes the second) will be automatically shown.
 You do not have to hold Ctrl or Shift to do multiple selection in this mode.
 Clicking on an empty spot will clear all selections.

Markup
This option allows the user to highlight an area in the Canvas by a free-hand drawing. There is an equivalent Markup
icon in the toolbar.
Note that any markups added to a model will disappear when the model is manipulated.
Options
This function allows the user to set various parameters that affect the behavior and appearance of the Preprocessor.
The fields in the right side of the Options window is determined by the Option selected in the left side of the window.
The equivalent keyboard shortcuts for opening this dialog are Alt + T + P or Ctrl + P.
View
If the View option is highlighted in the Options browser, the window below appears. These options affect the Canvas
display.
 Top Background Color\Bottom Background color

These two options set the color or colors for the Canvas background. If both options are the same color, the Canvas
is one color. If they are different colors, the Canvas will be shaded, with the top background color at the top of the
Canvas, the bottom background color at the bottom of the Canvas, and a gradient of color between the two, as
shown in Figure U5-16:

Figure U5-16 Creating a Color Gradient in the Preprocessor Canvas
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Clicking on the color icon beside this option opens the Color Chooser dialog seen below:
The user can click on the one of the available squares of color, and then click on OK to apply that color as the
background canvas color. Several option dialogs have color options that apply to different settings.
The user also has the option of selecting the color by entering values for hue, saturation and brightness (from the
HSB tab), by entering values for red, green and blue (from the RGB tab), or by entering the values for cyan, ma-
genta, yellow and black (from the CMYK tab).
 Projection Method
This option defines the view of the model.
 Orthographic: In the orthographic view, all objects appear at the same scale. Relative distance from the
camera does not affect the size of objects. This projection type is useful when it is important to maintain the
actual size of objects and the angles between objects.
 Perspective: In the perspective view, objects that are far away are smaller than those nearby. Perspective
viewpoints give more information about depth. This projection type is useful when you want to display real-
istic views of real objects. This view is the default.
 Axes visible
This option displays the XYZ orientation axes in the lower left corner of the Preprocessor canvas.
 Bounding Box visible
This setting determines if the bounding box that encloses a model is visible when the model is rotated.

bounding box
 Automatic Spin
This option allows the model to rotate continuously. The user checks this option and clicks on OK. Then in the
canvas window, the user clicks on the model and starts the rotation by dragging the model in the desired direction
of rotation. The model will continue to rotate until the user clicks on the canvas. To start the rotation again, click
and drag the model in the desired direction.
The speed of the rotation of the model is determined by the speed of the initial movement of the mouse. To make
the model move slowly, drag the mouse slowly when you start the rotation.
 Render Intermediate Views
If this option is selected, the user will see the model rotate slowly as the view is changed. For example, the user
will see the model move from the XYZ orientation to the XY orientation, instead of the model switching from one
orientation to another instantaneously.
 Smooth (Gouraud) Shading
With this display option, colors are assigned to each vertex, then they are blended across the face of the polygon.
Because each vertex is typically associated with at least three distinct polygons, thereby producing smooth shad-
ing, this makes the object look natural instead of faceted.
 LOD
This field allows the user to adjust the level of detail (LOD) that the Preprocessor displays. Setting this field to a
higher number decreases the level of detail. Decreasing the level of detail increases the rendering speed.
 Shadow
This checkbox allows the user to turn off and on the shadow effect that is visible if the Canvas color is not black.
Note the shadow around the bottom of the model on the left in Figure U5-17; in the figure on the right, the Shadow
option was turned off.
Figure U5-17 Shadow Effect Turned On and Off
On Off

Lighting
This option can be used to adjust the overall lighting of the model display.
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 Distant light position
Use this setting to adjust the distant light position. This setting allows the user to specify the distant light position
in spherical coordinates relative to the camera coordinate system. Figure U5-18 shows how the Preprocessor com-
putes the distant light position using spherical coordinates.
Figure U5-18 Relationship Between Spherical Coordinates and Camera Coordinate System
z’
ϕ
y’
θ
x’
x’, y’, and z’ represent the camera coordinate system. θ is the azimuth angle, and ϕ is the elevation angle. ν is the
directional vector; the Preprocessor assumes that ν = 1. The user can specify the azimuth and elevation angles, and
the Preprocessor will use those values to compute the distant light position.
 Distant Light Intensity
Use the sliding scale to dim or brighten the distant light. Setting this scale to 0 effectively turns off the distant light.
 Ambient Light Intensity
Use the sliding scale to dim or brighten the ambient light, which is the background light. If this setting and the
Distant Light Intensity setting are both 0, the canvas will be completely dark.
 Defaults
Use this button to reset the lighting options to the default settings, which are shown in the window above.

Mesh
This option sets mesh options that apply to all meshes.
 Split Parts
If a model has multiple, non-contiguous parts on the same layer, this option creates a separate volume for each
part when the layer is added to the Mesh Model folder. This feature allows the user to assign a different volume
boundary condition to each volume even though they were originally on the same layer.
This setting is turned off by default. When it is turned on, it will remain turned on throughout the Preprocessor
session, regardless of what model is active. But if the user exits the Preprocessor, and then opens it again, this
setting will be turned off.
 Shell Elements
This setting determines if a region is shellable. For more details, see page R2-8.
Rendering / Element Edges and Model Edges

If the Element Edges or Model Edges option is highlighted in the Options browser, the dialog below appears. These
settings affect the element and model edges if they are made visible in the Edit > Rendering Options dialog.
 Global Color
This option determines the color of all element or model edges (depending on which Rendering option is selected).
Clicking on the color icon opens the Color Chooser window.

Note that if you change the edge color for a model that has already been meshed, the new color will not be dis-
played unless you remesh the model.
 Thickness
This setting determines the line thickness (in pixels) of the edges. Unlike the color option, any change to this set-
ting will be applied to the model immediately; you will not have to remesh the model.
Line thickness cannot be any greater than 200.
Rendering Model Vertices
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If the Model Vertices option is highlighted in the Options browser, the dialog below appears. This dialog allows the
user to adjust the size of the vertices that appear on the model when the Rendering Options dialog, accessed from Edit
> Rendering Properties, has the Model Vertices option checked.
Selection
If the Selection option is highlighted in the Options browser, the dialog below appears. From this dialog, the user can
choose the highlight color that indicates an entity has been selected. For example, if the user clicks on the color icon
in this window, and selects the color blue, any entity then selected in the Preprocessor will turn blue. Note that a
change of this parameter only affects new selections.
The Selection Plane Tolerance setting affects the precision of the Edit > Select Faces by Plane functionality; see page
U5-28 for more details.

Quality Query
This option controls how the entities falling into the filtering range of the Quality Query function are highlighted in
the canvas. For more information on the Quality Query function, see page U5-45.
5.10.7: Help
The Help menu options include Preprocessor Reference and About. The Preprocessor Reference option opens the
Preprocessor documentation. The equivalent keyboard shortcut is the F1 key. Note that to access the documentation,
you must have Adobe Acrobat Reader, version 10 or higher on Windows and version 9.5 or higher on Linux.
The About option displays CoventorWare version information.

5.11: Preprocessor Environment Variables

The table below lists environment variables that a user can set to extend the Preprocessor’s functionality. These envi-
ronment variables activate functionality that is not needed by the average user and should be used with caution.
For information on how to set environment variables, see page U1-43.
Variable Name Possible Values What it does
COV_NO_OPENGL TRUE Turns off the OpenGL (hardware acceleration of graphics card) in
the Preprocessor. Use this variable only when you have graphics
issues that cannot be resolved by other means, such as upgrading
the video driver. Performance will suffer without OpenGL.
M
However, if you run into a rendering issue with OpenGL turned
on, you can always tell whether it's a graphics card issue or not by
using this environment variable to turn off OpenGL. On
Windows, setting this environment will switch the Preprocessor
to native GDI.
COV_SET_SPARESABS Range from 1.0e-10 ACIS reliably handles floating point numbers up to 10 digits
to 1.0, default 1.0e-6 (accuracy of 1.e-10 for numbers between 0 and 1). The default
accuracy is 1.e-6, meaning that the maximum model size where
ACIS still reliably operates is 1.0e+4. For models larger than
1.0e+4 this default accuracy must be lowered (by setting
COV_SET_SPARESABS) to 1.0e-5 or 1.0e-4, etc. (for maximum
models sizes of 1.0+5 or 1.0+6, etc.)
ACIS_NORMAL_TOLERANCE 0 < positive real Sets the normal tolerance for the ACIS facet refinement in the
value < 45, Preprocessor. The faceting of a solid model controls how
representing angle accurately the model is rendered. A small value for the normal
degrees. The default tolerance will cause rendering to be more accurate, but will also
value is 15. cause it to be slower.

Notes

Section 6: Foundry Design Kits Version 10.3
Section 6: Foundry Design Kits
CoventorWare includes several foundry design kits, also called process access kits, which provide the material and
process information necessary to fabricate a design according to the specifications of the selected foundry. The kit
provides parameters such as layer thickness, Young’s modulus, Poisson’s ratio, and stress gradient, which have been
well defined within the tolerances of the specific manufacturing process. The kit automatically sets these constraints
for the designer, allowing other design parameters to be varied during the evaluation of designs and allowing only
those designs that are perfectly compatible with the manufacturing process.
Each foundry design kit includes the following:
 a library of process emulation files (.proc), which define foundry-specific processes
M
 a material properties database, (.mpd), which provides foundry-specific values associated with materials,
such as tensile strength and boundary conditions
 a layout template file (.cat), which contains geometric and process descriptions for predefined MEMS ele-
ments.
Some design kits also include a runsetDRC.rs file, which can be used to verify that the 2-D layout conforms to a
foundry’s design specifications.
The following foundry design kits are included in CoventorWare 10:
 DALSA (page U6-2)
 IMEPKU (page U6-6)
 MEMSCAP MetalMUMPs, PolyMUMPs, and SOIMUMPs (page U6-8)
 Imec SiGeMEMS (page U6-14)
 SINTEF MoveMEMS PZT (page U6-18)
 Tronics 60µm SOI-HARM (page U6-22)
 NNFC (page U6-24)
The NNFC foundry design kit for CoventorWare (page U6-24) is available upon request.
The following sections provide basic information about the foundry processes and their implementation, but do NOT
replace the design handbooks that are provided by the foundries themselves. Any further questions regarding those
processes can be directed to the foundries using the contact information listed in each section.
The foundry process library is not designed to emulate all geometric details of the real MEMS process, but to
enable the generation of usable solid models based on the specific process. To attain a higher level of geometric
details, it is best to use SEMulator3D, distributed by Coventor, Inc.
The authors of the foundry process files will not be responsible for any error or damage caused by the use of the
CoventorWare tools and technology files during design and/or manufacturing processes, nor for loss of data, data
being rendered inaccurate, or losses sustained by the user or third parties, or any other failure.

6.1: Teledyne DALSA MIDIS Platform for Motion Sensors

The MIDIS (MEMS Integrated Design for Inertial Sensors) platform has been developed specifically to allow users
to design their own motion sensors for consumer electronics using stable, well-characterized process architecture. It
breaks the one-process-per-product MEMS paradigm, greatly reducing development cost and time to market.
MIDIS key features and benefits are
 standardized process, which reduces time to market, cost, and development time
 high vacuum and hermeticity allows resonator Q factors > 20,000
 getter free, high vacuum, wafer-level packaging using antechamber concept
 compact design with through-Silicon vias for signal routing through lid
 design kit and Multi-Projects-wafers program
Multi Projects/ Products Wafers (MPW) runs on Teledyne DALSA MIDIS are accessible through CMC Microsys-
tems (Canadian Microelectronics Corporation). This service drastically reduces the new product research and intro-
duction cost by sharing the expenses of masks set and wafer processing among multiple users.
6.1.1: Basic Process Description

Manufacturing on MIDIS is achieved through eleven design layers, which are used to generate data for nine masks
distributed on three levels of bulk Si (bottom-up):
Related Substrate
Design Layer Mask
and Side
BOTTOM_DEEP_CAVITY M95 HANDLE
STRUCTURE
M32
BUMPER DEVICE
COMB_TOP_RECESS M37
CAVITY_SEAL
M34
CONDUCTIVE_ANCHOR
TSV
ISOLATION_TRENCH M17
TOP_CAVITY M94
CONTACTS M60
METAL M70 ASSEMBLY
PADS M80
 The bottom or HANDLE substrate can be etched to create a bottom cavity.

 The membrane or DEVICE, which is 30µm thick, can be patterned with 1.5µm minimum width and spacing
features. The combs height can be locally reduced by 4µm from the top, allowing out-of-plane sensing.
 The cap or TSVsubstrate is divided in several equipotential islands of Si by closed-loop isolation trenches. It
can be etched to create a top cavity. Contact areas to MEMBRANE are controlled by two design layers.

Those three substrates once bonded form the wafer-level-packaged device ASSEMBLY. Its top carries a metal for
signal routing and a passivation layer for surface protection.
Figure D6-1 Schematic Cross-Section of Teledyne DALSA MIDIS Process
M
Figure D6-2 SEM Images of Cross-Sections of Devices Built on MIDIS
6.1.2: Implementation and Process Files

The following CoventorWare files are available for first-level design access to Teledyne DALSA's MIDIS platform:
 process located in \\Design_Files\Shared\Foundry folder: MK15S1_V1P3.proc
 a layout template file (MK15S1_V1P3.cat, located in \\Design_Files\Shared\Layout_Templates)
Note that these files are in the \CoventorWare10\apps\Foundry installation directory, but when the user designated
a workspace in the User Settings dialog (see page 2-7 of the CoventorWare Installation Instructions), the foundry
files were copied to the appropriate directory of that workspace.
For more information, please contact CMC Microsystems (Canadian Microelectronics Corporation) to receive com-
plete official up-to-date design kit including design rules; see page U6-5 for contact information.
There is one restriction when using MK15S1 process files for CoventorWare: it works with masks data and not
design layers as presented above. This means, prior to generating a solid model in CoventorWare, user must create
new layers in the Layout Editor and use them as merger results for MIDIS design layers as follows:

MIDIS Design Layer Layout Editor Layer for Solid Model
BOTTOM_DEEP_CAVITY or STRUCTURE M95

or BUMPER
M32
COMB_TOP_RECESS M37
CAVITY_SEAL or
M34
CONDUCTIVE_ANCHOR
ISOLATION_TRENCH M17
TOP_CAVITY M94
CONTACTS M60
METAL M70
PADS M80
Figure D6-3 Design Layout Example for MIDIS

Figure D6-4 Solid Model Generation using MIDIS Process
M
6.1.3: Contact Information
More information, including the fabrication schedule and the design user guide, can be obtained by contacting CMC
or Teledyne DALSA directly:
CMC Microsystems
DALSA Semiconductor, Inc.
Canadian Microelectronics Corporation
18, Boul. de l'aéroport
210A Carruthers Hall
Bromont, Quebec
Kingston, Ontario
Canada, J2L 1S7
Canada, K7L 3N6
Phone: (450) 534-2321
Phone: (613) 530-4666
Web: http://www.teledynedalsa.com/semi/contact/
Web: http://www.cmc.ca

6.2: IMEPKU - Beijing University Polysilicon Process

The IMEPKU process is a two-level polysilicon process. Six layers of materials are available to fabricate MEMS
structures and five masks are required.
Metal
Polysilicon
PSG
SiN
SiO2
Si substrate

The following CoventorWare-compatible files are available for the user to design into IMEPKU process:
 a process accessed from the Process Library’s Foundry Processes folder (IMEPKU)
 a layout template file (IMEPKU.cat)
Note that these files are in the \CoventorWare10\apps\Foundry installation directory, but when the user
designated a workspace in the User Settings dialog (see page 2-7 of the CoventorWare Installation Instructions),
the foundry files were copied to the appropriate directory of that workspace.
The IMEPKU process as it appears in the Process Editor is shown below:
Figure D6-5 shows a sample device built with the IMEPKU process. The figure on the right shows a SEM of the
device. The figure on the left shows a model built in CoventorWare.

Figure D6-5 Sample Device that uses the IMEPKU Process
M
For more details about the process, such as design rules and detailed process description, contact the Department of
Microelectronics at Beijing University:
Dr. Zhihong Li
Email: zhhli@ime.pku.edu.cn
Phone: +86-10-62752536
Website: http://www.ime.pku.edu.cn/IME_ENGLISH/

6.3: MEMSCAP MUMPs® Processes

The Multi-User MEMS Processes or MUMPs® is a commercial program that provides cost-effective, proof-of-con-
cept MEMS fabrication to industrial, governmental, and academic communities. MEMSCAP offers three standard
processes as part of the MUMPs program: PolyMUMPs™, a three-layer polysilicon surface micromachining process;
MetalMUMPs™, an electroplated nickel process; and SOIMUMPs™, a silicon-on-insulator micromachining pro-
cess.
The following section provides basic information about the MUMPs processes and their implementation in Coventor-
Ware and is complementary to the design handbooks that are provided by MEMSCAP. For more detailed informa-
tion, please visit the MUMPs web pages at http://www.memscap.com/en_mumps.html. Design rules and other
reference material are available for download. Technical questions regarding MUMPs can be emailed directly to
MEMSCAP (see page U6-13 for contact information).
6.3.1: MEMSCAP PolyMUMPs

Basic Process Description
Figure D6-6 is a cross section of the three-layer polysilicon surface micromachining MUMPs™ process. This process
has the general features of a standard surface micromachining process: (1) polysilicon is used as the structural mate-
rial, (2) deposited oxide (PSG) is used as the sacrificial layer, and (3) silicon nitride is used as electrical isolation
between the polysilicon and the substrate. The process is different from most customized surface micromachining
processes in that it is designed to be as general as possible to support many different designs on a single silicon wafer.
Because the process was not optimized with the purpose of fabricating any one specific device, the thicknesses of the
structural and sacrificial layers were chosen to suit most users, and the layout design rules were chosen conserva-
tively to guarantee the highest yield possible.
Figure D6-6 Cross-Section of the PolyMUMPs Process
Note: Step 25 of PolyMUMPs.proc is displayed, and Z scale is set to 5. The model was generated in
SEMulator3D
More details about the process, such as design rules and detailed process description, can be found in the recent ver-
sion of the PolyMUMPs design handbook – available from MEMSCAP (see page U6-13 for contact information).
Types of devices that have been successfully fabricated with PolyMUMPs include microphones, sensors, accelerom-
eters, RF, microrobotics, and display technologies.

Figure D6-7 Design Example of a Thermal Actuator Based on the PolyMUMPs Process
M
Implementation and Process Files
The following CoventorWare-compatible files are available for design with the PolyMUMPs process:
 a material properties database (MPD) file (MUMPs.mpd, located in \\Design_Files\Shared|MPD)
 a process in the Process Editor’s Foundry Processes folder (PolyMUMPs)
 a layout template file (PolyMUMPs.cat, located in \\Design_Files\Shared|Layout _Templates)
In addition to the PolyMUMPs layout templates, layout generators are available within the Layout Editor for para-
metric active, passive, and test structure layout elements. The generators are available from the Layout Editor’s Gen-
erators > PolyMUMPs menu.
The PolyMUMPs process as it appears in the Process Editor is shown below:

6.3.2: MEMSCAP SOIMUMPs

The following is a general process description for SOIMUMPs, which is designed for general-purpose micromachin-
ing of Silicon-on-Insulator (SOI) structures.
The figure below is a cross section of the silicon-on-insulator micromachining SOIMUMPs process.
Figure D6-8 Cross Section Showing all Layers of the SOI-MUMPs Process
not to scale
This process has the following general features:

1. A silicon-on-insulator (SOI) wafer is used as the starting substrate. This wafer has the following layer thick-
nesses:
 silicon thickness: 10 ± 1 µm or 25 ± 1 µm
 oxide thickness: 1 ± 0.05 µm
 handle wafer (substrate) thickness: 400 ± 5 µm
2. The silicon layer is doped and patterned, and then etched down to the oxide layer. This layer can be used for
mechanical structures, resistor structures, and/or electrical routing.
3. The substrate can be patterned, and then etched from the bottom side to the oxide layer. This allows for
through-hole structures.
4. A shadow-masked metal process is used to provide coarse metal features such as bond pads, electrical rout-
ing, and optical mirror surfaces.
5. A second pad-metal feature allows finer metal features and precision alignment, but is limited to areas not
etched in the silicon device layer.
The process is designed to be as general as possible, so it is capable of supporting many different designs on a single
silicon wafer. Because the process was not optimized with the purpose of fabricating any one specific device, the
layer thicknesses were chosen to suit most users, and the design rules were chosen conservatively to guarantee the
highest yield possible.
Types of devices that have been successfully fabricated with SOIMUMPs include gyroscopes, optical devices, and
display technologies.

Figure D6-9 Design Example of a Comb-Drive Resonator Based on the SOIMUMPs Process
M
The following CoventorWare-compatible files are available for design with the SOIMUMPs process:
 a process in the Process Editor’s Foundry Processes folder (SOIMUMPs)
 a material properties database (MPD) file (MUMPs.mpd, located in user_workspace\Shared\MPD)
 a layout template file (SOIMUMPs.cat, located in \\user_workspace\Shared\Layout_Templates)
The SOIMUMPs process as it appears in the Process Editor is shown below:

6.3.3: MEMSCAP MetalMUMPs

The following is a general process description for MetalMUMPs, which is designed for general-purpose electroplated
nickel micromachining of MEMS.
Figure D6-10 is a cross-section of a microrelay fabricated with the MetalMUMPs process.
Figure D6-10 Cross-Section View of Microrelay Fabricated with MetalMUMPs Process
Note: figure is not to scale

This process has the following general features:
1. Electroplated nickel is used as the primary structural material and electrical interconnect layer.
2. Doped polysilicon can be used for resistors, additional mechanical structures, and/or cross-over electrical
routing.
3. Silicon nitride is used as an electrical isolation layer.
4. Deposited oxide (PSG) is used for the sacrificial layers.
5. A trench layer in the silicon substrate can be incorporated for additional thermal and electrical isolation.
6. Gold overplate can be used to coat the sidewalls of nickel structures with a low-contact resistance material.
The process is designed to be as general as possible, so it is capable of supporting many different designs on a single
silicon wafer. Because the process was not optimized with the purpose of fabricating any one specific device, the
thicknesses of the structural and sacrificial layers were chosen to suit most users, and the layout design rules were
chosen conservatively to guarantee the highest yield possible.
Types of devices that have been successfully fabricated with MetalMUMPs include RF, relays, and magnetic
switches.
Figure D6-11 Design Example of Microrelay Based on the MetalMUMPs Process


The following CoventorWare-compatible technology files are available for design with the MetalMUMPs process:
 a process in the Process Editor’s Foundry Processes folder (MetalMUMPs)
 a material properties database (MPD) file (MUMPs.mpd, located in \\Design_Files\Shared\MPD)
 a layout template file (MetalMUMPs.cat, located in \\Design_Files\Shared\Layout_Templates)
The MetalMUMPs process as it appears in the Process Editor is shown below:
M
For more information about the process, including design hand books, contact MEMSCAP directly:
MEMSCAP Inc.
3021 E.Cornwallis Rd
PO Box 14486
Research Triangle Park,
Durham, NC 27709
USA
Telephone: +1 (919) 248-4102
Fax: +1 (919) 248-4110
Email: info@memscap.com
MUMPs web site: http://www.memscap.com/products/mumps

6.4: Imec SiGeMEMS

Imec’s SiGeMEMS technology is based on a MEMS-last approach, where the MEMS are processed after and on top
of the CMOS circuits. It enables monolithic integration of CMOS and MEMS, integrating MEMS devices with the
driving and readout electronics on the same die. This leads to a better performance compared to other integration
schemas: there is a better signal-to-noise ratio through a reduced interconnect parasitic resistance and capacitance, a
smaller die size and package, and lower power consumption.
Figure 6-12 Cross-Section of SiGeMEMS CMOS-MEMS Process
The target of the imec SiGeMEMS platform is to address a large number of applications by providing a baseline pro-
cess extendable with additional functional modules. The baseline process consists of MEMS structures defined by an
electrode layer, a mechanical layer and a capping layer. Other modules could be built on customer requirements.
The following section provides basic information about the SiGeMEMS process and its implementation in Coventor-
Ware and is complementary to the design handbooks that are provided by imec. Technical questions regarding the
SiGeMEMS process can be emailed directly to imec; see page U6-17 for contact information.
6.4.1: Description of the SiGeMEMS MEMS-Only Process

This technology creates MEMS structures consisting of an electrode layer and a suspended mechanical layer. The
SiGeMEMS process can be processed on top of a previously processed CMOS wafer, either originating from imec or
from an outside CMOS foundry. The baseline process can also be processed on a bared Si wafer. In this case, a metal
Al layer is deposited and patterned on top of the Si substrate to mimic the top metal layer of the CMOS back end.
Figure 6-13 depicts a more detailed cross-section of the SiGeMEMS process and indicates materials, functional parts,
and the main dimensional features. For simplicity, only the top level of metal of the CMOS wafer is drawn/modeled.

Figure 6-13 SiGeMEMS MEMS-Only Process Cross Section
M
The SiGeMEMS process has the following general features:
1. A CMOS wafer is used as the starting substrate.
2. The W material is used as contact plugs between the CMOS top metal layer and the MEMS part.
3. Poly-SiGE is used as the material for the electrode and the mechanical layers.
4. Deposited oxide is used as sacrificial layers.
5. An aluminum layer is used as material for the bond pads.
The process is designed to be as general as possible.
Figure D6-14 shows an example of an accelerometer built with the SiGeMEMS process; The example is based on the
design published by L. Wen, et. al. from ESAT-MICAS, Katholieke Universiteit Leuven, Belgium, and imec [1].
Figure D6-14 Design Example of Accelerometer Based on the SiGeMEMS Process
Note: This model was generated in SEMulator3D

Figure 6-15 Cross-Section of Device Built with SiGeMEMS Process
Note: This model was generated in SEMulator3D

The following CoventorWare-compatible technology files are available for design with the SiGeMEMS process:
 a material properties database file (SiGeMEMS_v2.mpd, located in \\CoventorMP1.1\Coventor-
Ware10.3\apps\Foundry)
 a process in the Process Editor’s Foundry Processes folder (SiGeMEMS).
 a layout template located in \\CoventorMP1.1\CoventorWare10.3\\apps\Foundry).
Figure 6-16 SiGeMEMS Process File


Users interested in this technology should contact the foundry directly. To take advantage of the versatile, flexible,
and modular technology, imec offers these additional extensions:
 Variable layer thicknesses
 Application-specific optimization of layer and material properties
 Application-specific functional add-on layers
Companies or academic institutions with interest in the SiGe MEMS technology should contact Maarten Willems at
imec:
Telephone: +32 16 28 83 79
Email: Maarten.Willems@imec.be
M
CMORE web site: http://www.imec.be

6.5: SINTEF MoveMEMS PZT

In addition to the established MPW processes at Tronics, a third MicroBUILDER module is also available and is
devoted to SINTEF's PZT add-on technology. The process is called SINTEF MoveMEMS PZT.

The following CoventorWare-compatible files are available for the user to design with the SINTEF process:
 a material properties database (MPD) file (SINTEF.mpd)
 a process accessed from the Process Library’s Foundry Processes folder (SINTEF_MoveMEMS_PZ-
T_v0.proc)
Note that these files are in the \\CoventorMP1.1\CoventorWare10.3\apps\Foundry installation directory, but
when the user designated a workspace in the User Settings dialog (see page 2-7 of the CoventorWare Installation
Instructions), the foundry files were copied to the appropriate directory of that workspace.
While some of the material data can be taken from literature, several parameters, such as the built-in mechanical
stress in each layer and the piezoelectric coefficients of the PZT layer, are very process specific and need to be deter-
mined experimentally. Modeling can be used to extract and validate these parameters. The layout template file can be
generated automatically from the process emulation file, which includes all necessary mask layers.
The SINTEF process as it appears in CoventorWare is shown below:

The material properties for CSD_PZT are shown below:
M
6.5.2: 3-D Modeling and Simulation
The three design kit files contain the necessary process-related information to build 3-D models and perform simula-
tions. These simulations can be carried out either using a bottom-up design flow or a top-down design flow. In the
bottom-up design flow, the user creates a layout and then constructs a 3-D model (see picture below), which can be
used for finite element analysis.

Figure D6-17 Cross-Section of Piezoelectric Cantilever Designed with MoveMEMS PZT
The meshed model can be simulated in ANALYZER’s MemMech solver (see pictures below).
Figure D6-18 Meshed Model

Figure D6-19 MemMech FEM Displacement Results
M
Users interested in this technology should contact the foundry directly. More information about the process and
request forms can be found at
http://www.sintef.no/Projectweb/Microbuilder/Mixed-Technology/#MoveMEMS

6.6: Tronics 60µm SOI-HARM Process

The full version of the Tronics SOI-HARM process provided with CoventorWare is password protected; it cannot
be opened without the password. To obtain the password, contact Tronics directly; see the contact information page
U6-23. The simplified version of the Tronics SOI-HARM process is not password protected and is also provided
with CoventorWare.

Tronics Microsystems, the French manufacturer of custom and semi-custom MEMS components, offers one of its
Thick SOI micromachining technologies as a standard technology.
This technology is proposed on a low-cost Multi-Project Wafer service (MEMSOI) for prototyping purposes. Once
the customer's concept is proven, the process can be customized to meet the customer's most stringent requirements.
Thicker layers are available, and additional features can be added, such as vertical electrodes in the cap, metallization,
connections to the bulk, and specific packaging.
Figure D6-20 SOI-HARM with Hermetic Package
Figure D6-21 Example Picture of Fabricated Devices
© Copyright 2002-2005 Tronics Microsystems SA
This thick SOI surface micromachining technology allows the realization of

 capacitive accelerometers and gyrometers
 in-plane electrostatic actuators
 high Q factor resonators
 capacitive and electrostatic structures

References
http://www.tronics.eu/tech/mems_soi.html

The following CoventorWare-compatible files are available for design with the Tronics EpiSOI process:
 a password-protected process file in the Process Library’s Foundry Processes folder (Tronics_MEM-
SOI_60_HARM.proc)
 a simplified process file (Tronics_MEMSOI_60_HARM_simple, which is not password protected.
 a material properties database (MPD) file (Tronics.mpd, located in \\Design_Files\Shared\MPD)
 a layout template file (Tronics_MEMSOI_60_HARM.cat, located in \\Design_Files\Shared\ Layout_Tem-
plates)
M
 a design rule runset file (Tronics_MEMSOI_60_HARM_runsetDRC.rs, located in \\Coventor-
Ware\apps\Foundry). This file includes Tronics design rules and can be executed from Tools > Layout
Checks > Batch Rule Check > Run Checks. See page L2-112 for more details.
Note that these files are in the \\CoventorMP1.1\CoventorWare10.3\apps\Foundry installation directory, but
when the user designated a workspace in the User Settings dialog (see page 2-7 of the CoventorWare Installation
Instructions), the foundry files were copied to the appropriate directory of that workspace.
The simplified process file neglects certain process details and primarily generates the active device layer, which is
the crystal silicon SOI device layer. The associated 3-D solid model is usually sufficient to run most simulations.
The complete, password-protected file is more realistic and includes all process steps, as well as the wafer encapsula-
tion sequence. The password can be directly obtained from Tronics Microsystems (see below for contact informa-
tion).
Figure D6-22 shows an accelerometer that includes a suspended seismic mass and comb-drive electrodes (left), the
extracted layout (top right) and 3-D solid model (bottom right) of the mechanical core-structure of the device gener-
ated using the Tronics process.
Figure D6-22 Example of Device Design with Tronics Process

For more information, including the process password and design hand books, contact Tronics directly:
Tronics Microsystems S.A.
55 rue du Pré de l'Horme
38926 CROLLES Cedex
FRANCE
Telephone: +33 (0)4 76 97 29 50

Fax: +33 (0)4 76 97 29 51

E-mail: info@tronics.eu
Web site: http://www.tronics.eu/tech/mems_soi.html
6.7: NNFC's Surface Micromachining Process: Thin MEMS

Platform Technology
NNFC (National Nanofab Center) has been developing cutting-edge nanoequipment and facilities and providing
micro/nano processing services since its foundation in 2001 under the Korean Nanotechnology Development Promo-
tion Act, followed by its launch in May 2004.
NNFC's mission is to offer nanotechnology equipment/facility/process services to all kinds of users, including aca-
demia, research institutes, and industries; to provide nanotechnology education with hands-on experience to students,
researchers, and experts; and to promote nanotechnology commercialization of the research and development proj-
ects.
NNFC is the only foundry infrastructure in Korea able to combine MEMS processes and CMOS technologies. By
pooling prototyping and manufacturing capabilities under the guide of design expertise from Coventor, NNFC is able
to transfer ideas into devices.
The following section provides basic information about NNFC's processes and their implementation in Coventor-
Ware. For more information on NNFC’s Thin MEMS processes, contact NNFC directly (see page U6-28 for contact
information).

Most surface-micromachined structures have several layers over the sacrificial layer. NNFC's Thin MEMS platform
is similar to conventional surface micromachining processes and can be applied to various electromechanical sensors:
 infrared sensors,
 pressure sensors,
 micromirrors,
 thin inductors,
 tunable capacitors, and
 RF MEMS
An example of an NNFC design application is a microbolometer. Generally, a microbolometer has a very thin mem-
brane supported with anchors to maintain the 4/λ resonant cavity structure and electrical connection. A unit pixel has
2-4 anchor supports, only 2 of which have an electrical conductive layer to make electrical resistance independent of
neighboring pixels. User-proposed designs are tested in terms of the mechanical, electrical, and thermal characteris-
tics using FEM simulation.
NNFC's Thin MEMS platform technology offers these advantages:
 It is a CMOS-compatible process in which all materials are applicable to a general CMOS foundry. It uses a-
Si, nitride, oxide, and metals. Various polymeric or non-polymeric materials can be used as a sacrificial layer.
NNFC's Thin MEMS platform is a kind of MEMS post-process for substrates manufactured with standard
CMOS technologies; therefore, a CMOS/MEMS process is possible with the same foundry equipment and in
the same site.
 Electrical characterization of a microbolometer design implemented over a simple CMOS switch circuit can
be obtained without a complex ROIC circuit. NNFC’s novel test technique makes it very easy to check the
feasibility of a user's microbolometer design. NNFC provides total solutions such as design tools, a process
library, monitoring TEGs, and statistical yield information using an autoprobe station.
A brief introduction of NNFC's Thin MEMS Process Platform can be found in the recent version of the MEMS
design kit user guide, available from NNFC's Thin MEMS Process Platform. More details about the process, such as

design rules and process descriptions, can be provided in case of collaboration (see page U6-28 for contact informa-
tion).
Figure D6-23 Last Step in NNFC's Microbolometer Process
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Figure D6-24 Meshed Example of General Microbolometer Pixel

Figure D6-25 SEM Micrograph of Surface-Micromachined Microbolometer

The following CoventorWare-compatible files are available upon request for design with NNFC's Thin MEMS pro-
cess:
 a NNFC_ SaFPA process description file (.proc), which should be copied to the user’s \\Design_-
Files\Shared\Foundry folder
 a NNFC_SaFPA material properties database (MPD) file, which should be copied to the user’s \\Design_-
Files\Shared\MPD folder
 a NNFC_SaFPA layout template file (.cat), which should be copied to the user’s \\Design_Files\Shared\Lay-
out_Templates folder
 a NNFC_SaFPA_runsetDRC.rs file (design rule runset file), which should be copied to the user’s \\Coventor-
Ware\apps\Foundry folder. This file includes NNFC's design rules and can be executed from Tools > Layout
Checks > Batch Rule Check > Run Checks.
The NNFC_SaFPA process as it appears in CoventorWare’s Process Editor is shown below:

Figure D6-26 Process File
M
Figure D6-27 shows examples of Analyzer simulations that include static (left) and transient (right) electrothermal
characteristics using NNFC's Thin MEMS process.
Figure D6-27 Electrothermal Analysis Results in CoventorWare

Static Electrothermal Analysis Transient Electrothermal Analysis
For a detailed tutorial of a microbolometer that uses the NNFC process, see page T11-1 of the MEMS Design and
Analysis Tutorials.


CoventorWare-compatible design files and additional foundry information can be obtained by contacting NNFC
directly:
MEMS Business Division, National Nanofab Center
291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Korea
Tel: +82 42 879 9721 Fax: +82 42 879 9604
email: nnfc@nnfc.re.kr or hyeounkim@nnfc.re.kr
Web site: www.nnfc.com or www.nnfc.re..kr
6.8: References
1 L. Wen, K. Wouters, L. Haspeslagh, A. Witvrouw, R. Puers, “A comb based in plane SiGe capacitive acceler-
ometer for above-IC integration”, Proceedings of MME’10, Twente, the Netherlands, 26-28 September 2010,
pp.212-215.

Section 7: Glossary Version 10.3
Section 7: Glossary
Abaqus - a commercial mechanical Finite Element analysis package compatible with CoventorWare.
ambient temperature - temperature of the environment in which a strain measurement is being made.
artifacts - unwanted shapes or other information from previous steps that do not clear out after some Layout Editor
operations. Clicking on the Refresh icon will remove these artifacts and restore the display to its correct view.
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beam element - an element type defined by two nodes.
BEM - boundary element method. This alternative to the finite element method is a numerical technique that reduces
computation time by confining solution dependencies to boundary values.
bimetal strip - a MEMS device that consists of a sandwich of two different metals with different temperature
coefficients of expansion.
brick - a term used to describe a volume element of a modeled part. A brick is a hexahedral element that has a
Manhattan geometry (right-angle corners and opposite faces are parallel).
boundary conditions - stimulus applied to model to set input conditions for a model solution. Boundary conditions
can include applied voltages and charges, mechanical loads and constraints, residual stresses, etc.
bounding box - an outside border that surrounds a selected object. The border is always rectangular, even if the shape
is a curve or an irregular polygon. It the same as an extent.
Calma Stream format - equivalent to GDS format; an old term used to define files created from Calma
workstations. The Calma format became an industry standard.
cantilever - a beam structure with one fixed and one free end.
CIF - Caltech Intermediate Format. This is another industry standard file exchange format.
clear field - equivalent to a positive tone or + polarity mask. It indicates locations on the 2-D drawing where objects
are to be preserved; the area not under the clear field is etched away; also known as a light field.
clip layer - a special layer used to bound a portion of a 2-D drawing. When the layer is enabled during the Build
Model step, only the part of the design within the clip layer polygon is rendered as a 3-D model.
conformal - one of a number of deposition techniques supported in CoventorWare. A conformal deposit conforms to
the semiconductor surface, forming a coating that follow contours and irregularities due to previous process steps.
contact surface - a specific surface setting in CoventorWare; another surface contacting it will not penetrate through
its plane. The setting is part of the MemMech boundary condition setup.

convection - the transfer of heat from one place to another by the actual motion of material. The material is usually
air or water.
convection coefficient - a constant (h) used in the calculation of heat transfer. It can be solved for indirectly by
specifying ambient flow.
Coriolis acceleration - tangential acceleration associated with a body moving radially through a rotating system
while revolving with the system.
coupled solver - a CoventorWare tool that combines the effects of electrostatic and mechanical computations. Other
coupled combinations exist within individual solver modules and in sequenced solver runs.
dark field - equivalent to a negative tone or - polarity mask; it indicates locations on the 2-D drawing where objects
are to be etched away. As an example, simple small rectangles used to build holes in oxide layers are usually created
on dark field masks, with only the area under the rectangles etched away during processing.
deformation - the distortion of a mechanical device as a result of applied or electrostatic force. The MemMech solver
computes deformation and displays it in tabular and visual form.
delete layer - a process layer used to hold a movable layer in place during manufacturing. This layer is etched away
when the process is complete to allow free movement of the constrained fabricated device.
deposit - to add material during processing. Several types of deposition techniques may be used, and materials
deposited may be used for devices, for mechanical strength, for insulation, or for other purposes.
Designer - a CoventorWare module that contains all the functionality needed to create a MEMS design. It is also a
stand-alone product. It includes the Process Editor, the MPD editor, the 2-D Layout Editor, and the solid model
builder. Meshing capabilities are an optional feature in the stand-alone product. All these functions are incorporated
in CoventorWare.
Devices directory - a subdirectory of the project directory that is the default directory for process and layout files. It
also has the Extra subdirectory that contains interim .sat files.
dimple -a protrusion created by partially etching into a sacrificial layer, then filling up with a subsequent structural
layer deposition via a micromachining process. Dimples are usually used to minimize stiction between two structural
layers.
discrete model - a model composed solely of mesh entities; it has no solid model associated with it. These models are
usually created from imported meshes or from meshes that have been merged.
displacement - movement or deflection of a material due to a mechanical or electrostatic force. The MemMech
solver computes displacement of movable materials.
DXF - Drawing Exchange Format. This is an ASCII text file format used by CAD programs as a complete
representation of a design. The 2-D Layout Editor accepts files in this format.
edge - a line or curve that connects two vertices.

element - a volume that is defined by a connected set of element edges.
element edge - a line that connects two mesh nodes
element face - a planar surface that is defined by a connected set of element edges.
element order - an element property that indicates the order of the polynomial that will be used to represent the
unknown fields during an analysis. CoventorWare supports linear and parabolic element orders.
element type - an element property that describes the shape of the element.
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electromechanical solution - results of computations performed by the CoSolveEM solver, which couples electrostatic
and mechanical solutions. The results can be displayed in tabular matrix format, or viewed with the Visualizer.
electrostatic solution - results of computations performed by the MemElectro solver. The results can be displayed in
tabular matrix format, or viewed with the Visualizer in 3-D color.
entity - a generic term for any component of a solid model or a mesh. For example, vertices, edges, faces, parts, and
elements are entities.
etch - to remove previously deposited material during processing. An etch step, defined by a mask, creates a surface,
device, or other entity.
Euler colums - test structures used to determine the critical buckling length for the residual strain in a structural
layer.
extent - an outside border which surrounds a selected object. The border is always rectangular, even if the shape is a
curve or an irregular polygon. It the same as a bounding box.
Extra directory - a sub-directory of the Devices directory within each project directory. It contains intermediate files
produced by the solid model and meshing tools, such as 2-D and 3-D IGES files.
extrude - to create a three-dimensional volume from a two-dimensional surface by extending in the Z direction.
face - a surface that is defined by a closed set of edges. For example, a cube has six faces. Mesh faces can be part of a
common patch when they are in the same plane; for non-rectangular planes the faces must meet software angle
requirements.
FEM - finite element method. A finite element model stores the computation nodes required by the MemMech solver
to compute a 3-D mechanical solution using numerical techniques.
film convection - a thermal analysis of air flow over a surface or volume of a part, dealing with the thermal
characteristics of the skin or film of the model.
flatten - remove all hierarchy from a design so all cells are at the same top level.

foundry - a semiconductor manufacturing facility that can produce prototype or production devices in silicon.
ground plane - a surface area used as a reference for measuring initial voltage or charge on a nearby part. Ground is
usually modeled as part of the software process, and can accumulate charge or become a contact surface when a
nearby movable part is displaced.
Guckel Ring - a stress measurement structure used to determine tensile film stress.
harmonic analysis - the ability to apply a frequency-dependent harmonic excitation to a MEMS component and
observe the structure response.
hexahedral element - an element type with eight element faces.
hysteresis - a characteristic exhibited by a MEMS device that results in two different responses to the same input. A
beam exhibits hysteresis if a voltage ramp causes a different electromechanical response when the voltage is ramped
up or down.
I-deas - third-party tool owned by UGS. I-deas can be used for meshing and finite element creation for 3-D devices.
The I-deas .unv file can be imported into CoventorWare’s database as a discrete model.
IGES - Initial Graphics Exchange Specification.
layer - a collection of one or more parts that results from one or more identifiable steps in the fabrication process. All
of the parts in a layer are made out of the same material
light field - equivalent to a positive tone or + polarity mask; it indicates locations on the 2-D drawing where objects
are to be retained. As an example, polygons and other shapes created for structural polysilicon layers are usually
created on light field masks, with all but the area under the shapes etched away during processing. Also known as
clear field.
link - a special feature of CoventorWare that allows different modeled parts to be joined together. The separate parts
can then be simulated as a whole.
Manhattan geometry - all angles between the model faces are at 90 degree angles.
mask tone - opaque material on a mask designated to isolate or etch during processing. A positive tone mask resists
etching in the dark area of the mask, while a negative or reverse tone mask allows etching in the opaque area.
meshing - a process that breaks a 3-D model into finite 3-D representations for finite element analysis. Meshes are
used by the CoventorWare solvers and can be applied to surfaces and volumes.
modal analysis - an analysis mode of CoventorWare that allows a part’s natural frequencies of vibration to be
simulated. The modal analysis solver can compute any number of modes as input by the user.
moment - the product of the magnitude of a force and its force arm. Also known as torque.

node - a point in three-dimensional space associated with a mesh. All other mesh entities, namely element edges,
element faces, and elements can be defined by a set of nodes. The order of the nodes in the set determines the
orientation of each mesh entity.
normal vector - a unit length vector perpendicular to the surface of an object and pointing inward. CoventorWare
uses the normal vector convention to display information about object orientation. A normal vector of (0,0,-1)
describes the top face of a volume.
OGL -2-D and 3-D graphics application providing functions such as modeling, transformations, color, lighting, and
smooth shading; is integrated with CoventorWare.
orthogonal - having lines that are at right angles, being perpendicular to each other, as opposed to having lines that
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meet at angles other than 90 degrees.
partition - creation of two or more volumes through a part. Each volume can then be meshed independently.
Partitioning can be done with a process step or within the Preprocessor using a block, plane, or a wedge.
part - a volume that is defined by a closed set of faces and is made of one material.
patch - a CoventorWare defined entity that consists of two or more faces of a meshed model. Mesh faces can be part
of a common patch when they are in the same plane; for non-rectangular planes the faces must meet software angle
requirements.
perturbation - response of a device to a small change in boundary conditions. In the Parametric Study tool, a
perturbation appears when a sensitivity analysis is set.
pitch - the distance between repeating elements in a design. In the Layout Editor, the pitch can be smaller than the
bounding box extent of the repeating object.
planar - one of a number of deposition techniques supported in CoventorWare. A planar deposit fills in any uneven
areas, and adds additional material to the surface to create a uniform flat deposition over the entire surface.
Poisson’s ratio - The ratio of transverse strain to axial strain during axial load, or the negative ratio of lateral strain to
axial strain.
pressure sensor - a MEMS device that can sense applied force in the form of a pressure or fluid load, and which
changes its capacitive or stress characteristics in proportion to this load.
principal stress - the maximum and minimum normal stresses in a plane, always perpendicular to each other and
oriented in directions for which the shear stresses are zero.
PSG - phosphosilicate glass; a deposited oxide step used in a foundry process. For MEMS devices, the PSG layers
are often used as sacrificial layers and removed after fabrication to create freedom of movement for mechanical
devices.
pull-in - the point at which the growth of an electrostatic force becomes dominant over the linearly increasing
mechanical restoring force, causing a MEMS device to quickly snap, or pull in, to the ground plane. The quantity is

commonly expressed as a voltage.
queries - CoventorWare feature that extracts or computes data based on the simulation results. A variety of
parameters, chosen for patches, regions, or volumes, can be analyzed in tabular or graphical form.
radius -setting using in link boundary condition setup; determines the degree of coupling between joined faces of
independent part types.
relaxation algorithm - an algorithm choice for use with the CoSolveEM solver. The relaxation technique allows the
solution to converge simply and quickly.
reaction force - force opposite to an applied force; in CoventorWare, develops at the fixed points of a model when a
pressure load is exerted.
release - the point at which the growth of an electrostatic force exactly balances the spring force of a pulled-in
MEMS device. The quantity is commonly expressed as a voltage.
residual stress - internal stress of a material before external forces are applied. Changes in residual stress can affect
mechanical displacement of a material.
sacrificial layer - a process layer used to hold a movable layer in place during manufacturing. This layer is etched
away when the process is complete to allow free movement of the constrained fabricated device. The name delete
layer also is used within the software dialogs and in this documentation.
sensitivity analysis - a Parametric Study feature that adjusts one parameter by a positive and negative percentage
while running a full trajectory variation for another parameter. The results can be analyzed in graph form to determine
performance changes due to manufacturing or environment shifts.
shell element - an element type that has one element face; can be further categorized as triangular or quadrilateral.
Shell elements are created on the surface of a part.
solid modeling - modeling based on solid geometry instead of wireframes or surfaces. A solid model contains
enough information to fully describe the boundaries, surfaces, and topology of a part.
stacked - one of a number of deposition techniques supported in CoventorWare. A stacked deposit is a rigid
deposition that lies on top of any surface irregularities without filling in gaps and holes.
stiction - the phenomenon of unintended adhesion of released mechanical elements to the substrate. This occurs
when surface tension during drying of a wet release etch causes beams to make contact with the substrate.
surface mesh - a mesh that discretizes only the faces of the solid model.
TCE - temperature coefficient of expansion. This material property must be defined for thermal analysis.
Tcl/Tk - Tool Command Language/Tool Kit; a scripting language used as the user interface language for
CoventorWare’s Layout Editor. Tk is the graphical interface development tool.

temp - the preferred directory designation used to store all system files generated during a software session.
tether - a projection from the body of a model, usually used to anchor the body to another surface or part.
tetrahedral element - an element that has four element faces. Linear tetrahedral elements have four nodes; parabolic
tetrahedral elements have ten nodes.
tie - a special feature available in MemMech that allows modeled parts to be joined.
trajectory - a set of input numbers used as values or factors by the Parametric Study function. By specifying a
trajectory, users can create a set of output results that can be graphed or visualized.
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vertex - a point in three-dimensional space; defined by the intersection of model edges.
via - an etch technique that removes insulating material between two similar layers, providing a hole that allows the
two layers to touch. It is often used to connect two conducting metallization layers in selected locations, where the top
layer of deposited metal flows through the hole and connects to the previously deposited metal underneath.
Visualizer - a CoventorWare tool that allows viewing simulation results in 3-D; results from any of the solvers may
be viewed. The Visualizer supports color mapping of charge and stress, allows viewing of both surface and interior
stresses, and includes an animation module that captures and plays back desired 3-D views.
volume - the interior of a three-dimensional object; the term can be used to designate the type of mesh to be
performed, or is an equivalent term for part in CoventorWare nomenclature.
Young’s modulus - also known as elastic modulus; a measure of material strength. It is the ratio of axial stress to
normal strain.
work directory - the root directory that contains all project directories. It is also the default directory for the shared,
temp, log, and tutorial directories.
x3d - extensible 3-D graphics application integrated with XML; integrated with CoventorWare.

Notes

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CoventorWare® 10.

ii March 21, 2018 Coventor, Inc.

Section 1: Using CoventorWare

1.2: Document Conventions ......................................................................... U1-6

1.3: CoventorWare Conventions .................................................................. U1-8

1.4: Licensing............................................................................................... U1-10

1.5: CoventorWare Console........................................................................ U1-11

Coventor, Inc. March 21, 2018 iii

1.5.4: Scripting Console ................................................................................................... U1-17

1.6: Dialog Overview ....................................................................................U1-20

1.7: Common Button Functions..................................................................U1-26

1.8: File Types and Organization ................................................................U1-27

1.9: Design Considerations.........................................................................U1-35

1.10: Enhancing Productivity......................................................................U1-37

iv March 21, 2018 Coventor, Inc.

1.10.1: How to Run an Analysis....................................................................................... U1-37

1.11: Environment Variables....................................................................... U1-43

Section 2: Creating a 3-D Model

2.2: Enter in 2-D... Think in 3-D..................................................................... U2-7

2.3: Tutorials ................................................................................................ U2-14

Coventor, Inc. March 21, 2018 v

Section 3: Material Properties Database

3.2: Material Properties..................................................................................U3-5

vi March 21, 2018 Coventor, Inc.

3.3: References ............................................................................................ U3-34

Section 4: The Process Editor

4.2: Substrate Step ........................................................................................ U4-3

4.4: User-Defined Step Definitions............................................................. U4-20

Coventor, Inc. March 21, 2018 vii

Lift-Off .................................................................................................................... U4-27

4.5: Foundry Processes...............................................................................U4-32

4.7: Deposit and Etch Basics ......................................................................U4-37

4.8: Etch Conventions .................................................................................U4-44

Section 5: Preprocessor Reference

5.2: Window Description ...............................................................................U5-1

viii March 21, 2018 Coventor, Inc.

5.3: Preprocessor Terminology.................................................................... U5-3

5.4: Preprocessor Flow ................................................................................. U5-4

5.5: Solid Modeling Operations .................................................................... U5-5

5.6: Naming Entities .................................................................................... U5-13

5.7: Meshing ................................................................................................. U5-15

5.8: Importing and Exporting a Model ....................................................... U5-15

5.9: Icons ...................................................................................................... U5-16

Coventor, Inc. March 21, 2018 ix

5.10: Menu Options ......................................................................................U5-27

x March 21, 2018 Coventor, Inc.

Add to Mesh Model................................................................................................ U5-42

5.11: Preprocessor Environment Variables .............................................. U5-57

Section 6: Foundry Design Kits

6.2: IMEPKU - Beijing University Polysilicon Process ............................... U6-6

6.3: MEMSCAP MUMPs® Processes............................................................ U6-8

Coventor, Inc. March 21, 2018 xi

Basic Process Description ..................................................................................... U6-10

6.4: Imec SiGeMEMS....................................................................................U6-14

6.5: SINTEF MoveMEMS PZT ......................................................................U6-18

6.6: Tronics 60µm SOI-HARM Process ......................................................U6-22

6.7: NNFC's Surface Micromachining Process .........................................U6-24

xii March 21, 2018 Coventor, Inc.

Section 1: Using CoventorWare

Figure U1-1 Design Flow

Coventor, Inc. March 21, 2018 U1-1

1.1: Major Components

1.1.2: Material Properties Database

1.1.3: Process Editor