PD - 97535A

IRLML6244TRPbF
HEXFET® Power MOSFET
VDS 20 V
VGS Max ±12 V * 
RDS(on) max
21.0 m  '
(@VGS = 4.5V)
RDS(on) max
27.0 m 6  Micro3TM (SOT-23)
(@VGS = 2.5V) IRLML6244TRPbF

Application(s)
Load/ System Switch

Features and Benefits

Features Benefits
Low RDS(on) ( < 21m) Lower conduction losses
Industry-standard SOT-23 Package results in Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen  Environmentally friendly

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.1 A
IDM Pulsed Drain Current 32
PD @TA = 25°C Maximum Power Dissipation 1.3
W
PD @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient e ––– 100
°C/W
RJA Junction-to-Ambient (t<10s) f ––– 99

ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.

Notes  through „ are on page 10

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Electric Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 7.8 ––– mV/°C Reference to 25°C, ID = 1mA
––– 16.0 21.0 VGS = 4.5V, ID = 6.3A d
RDS(on) Static Drain-to-Source On-Resistance
––– 22.0 27.0
m
VGS = 2.5V, ID = 5.1A d
VGS(th) Gate Threshold Voltage 0.5 0.9 1.1 V VDS = VGS, ID = 10μA
IDSS ––– ––– 1.0 VDS = 16V, VGS = 0V
Drain-to-Source Leakage Current μA
––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
RG Internal Gate Resistance ––– 1.7 ––– 
gfs Forward Transconductance 17 ––– ––– S VDS = 10V, ID = 6.3A
Qg Total Gate Charge ––– 8.9 ––– ID = 6.3A
Qgs Gate-to-Source Charge ––– 0.68 ––– nC VDS =10V
Qgd Gate-to-Drain ("Miller") Charge ––– 4.4 ––– VGS = 4.5V d
td(on) Turn-On Delay Time ––– 4.9 ––– VDD =10V d
tr Rise Time ––– 7.5 ––– ID = 1.0A
ns
td(off) Turn-Off Delay Time ––– 19 ––– RG = 6.8
tf Fall Time ––– 12 ––– VGS = 4.5V
Ciss Input Capacitance ––– 700 ––– VGS = 0V
Coss Output Capacitance ––– 140 ––– pF VDS = 16V
Crss Reverse Transfer Capacitance ––– 98 ––– ƒ = 1.0MHz

Source - Drain Ratings and Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
––– ––– 1.3
(Body Diode) showing the
A
ISM
G
Pulsed Source Current integral reverse
(Body Diode) c ––– ––– 32
p-n junction diode.
S

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 6.3A, VGS = 0V d
trr Reverse Recovery Time ––– 12 18 ns TJ = 25°C, VR = 15V, IF=1.3A
Qrr Reverse Recovery Charge ––– 5.1 7.7 nC di/dt = 100A/μs d

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 IRLML6244TRPbF
100 100
VGS VGS
TOP 10V TOP 10V
4.5V 4.5V
3.0V 3.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

2.5V 2.5V
2.3V 2.3V
2.0V 2.0V
10 1.8V 10 1.8V
BOTTOM 1.5V BOTTOM 1.5V

1.5V
1 1

1.5V

60μs PULSE WIDTH 60μs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 1.6
ID = 6.3A
RDS(on) , Drain-to-Source On Resistance

VGS = 4.5V
ID, Drain-to-Source Current (A)

1.4

10
1.2
(Normalized)

T J = 25°C
T J = 150°C
1.0
1

0.8
VDS = 15V
60μs PULSE WIDTH
0.1 0.6
0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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 IRLML6244TRPbF

10000 14.0
VGS = 0V, f = 1 MHZ
ID= 6.3A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd 12.0

VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= 16V
10.0 VDS= 10V
C, Capacitance (pF)

1000 Ciss VDS= 4.0V

8.0
Coss
Crss
6.0

100
4.0

2.0

10 0.0
1 10 100 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100μsec
T J = 150°C
10 10 1msec

10msec
T J = 25°C
1 1

T A = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRLML6244TRPbF

7 RD
V DS
6
VGS
D.U.T.
5 RG
ID, Drain Current (A)

+
- VDD

4
VGS
Pulse Width µs
3 Duty Factor 

2 Fig 10a. Switching Time Test Circuit

1
VDS
90%
0
25 50 75 100 125 150
T A , Ambient Temperature (°C)

10%
Fig 9. Maximum Drain Current vs. VGS
Ambient Temperature td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

1000
Thermal Response ( Z thJA ) °C/W

100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01

0.1

Notes:
0.01 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + T A
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLML6244TRPbF

50 80
RDS(on), Drain-to -Source On Resistance (m )

RDS(on), Drain-to -Source On Resistance ( m)

ID = 6.3A

40 60

Vgs = 2.5V

30 40

T J = 125°C Vgs = 4.5V

20 20

T J = 25°C

10 0
1 2 3 4 5 6 7 8 9 10 11 12 0 10 20 30 40 50 60
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance vs. Fig 13. Typical On-Resistance vs.
Gate Voltage Drain Current

Current Regulator
Same Type as D.U.T.

50K
QG
12V .2F
.3F
VGS +
QGS QGD V
D.U.T. - DS

VG VGS

3mA

Charge IG ID
Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit
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 IRLML6244TRPbF

1.4 1000
VGS(th) , Gate threshold Voltage (V)

1.2
800

Single Pulse Power (W)

1.0

0.8 600

ID = 10μA
0.6 ID = 250μA 400

0.4
200
0.2

0.0 0
-75 -50 -25 0 25 50 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
T J , Temperature ( °C ) Time (sec)

Fig 15. Typical Threshold Voltage vs. Fig 16. Typical Power vs. Time
Junction Temperature

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IRLML6244TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
6 A 5
MILLIMETERS INCHES
D SYMBOL
MIN MAX MIN MAX
A 0.89 1.12  
A
A2 C
A1 0.01 0.10 0.0004 
3 E A2 0.88 1.02  
6 E1
0.15 [0.006] M C B A b 0.30 0.50  
1 2
0.10 [0.004] C c 0.08 0.20  
A1
3X b D 2.80 3.04  
e
5 B 0.20 [0.008] M C B A E 2.10 2.64  
NOTES:
e1 E1 1.20 1.40  
e 0.95 BSC  %6&
e1 1.90 BSC  %6&
L 0.40 0.60  
H 4 L1 L1 0.54 REF  REF
Recommended Footprint
L2 0.25 BSC  BSC
c
0.972 0 8 0 8

0.950
L2 2.742
0.802

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

3X L 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
7 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

Micro3 (SOT-23/TO-236AB) Part Marking Information

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DATE CODE MARKING INSTRUCTIONS
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8 www.irf.com
 IRLML6244TRPbF

Micro3(SOT-23)Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )

1.95 ( .077 ) 1.5 ( .060 )
1.85 ( .072 ) 1.12 ( .045 )
4.1 ( .161 )
3.9 ( .154 ) 1.65 ( .065 )

TR 3.55 ( .139 ) 8.3 ( .326 )

3.45 ( .136 ) 7.9 ( .312 )

FEED DIRECTION 4.1 ( .161 )

3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )
0.9 ( .036 ) 0.25 ( .010 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com 9
 IRLML6244TRPbF

Orderable part number Package Type Standard Pack Note

Form Quantity
IRLML6244TRPbF Micro3 (SOT-23) Tape and Reel 3000

Qualification information†
††
Cons umer
Qualification level †††
(per JE DE C JE S D47F guidelines )
MS L1
Moisture Sensitivity Level Micro3 (SOT-23) †††
(per IPC/JE DE C J-S T D-020D )
RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width  400μs; duty cycle  2%.
ƒ Surface mounted on 1 in square Cu board.
„ Refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. SEpulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/12
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