Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998.

11

The Microstrip Antenna Analysis and Design Using

The TTL Method

Anthony R. N. Farias and Humberto C. Chaves Fernandes

Department of Electrical Engineering - Technological Center
Federal University of Rio Grande do Norte
P.O.Box 1583, Tel/Fax: +55 84 215.3731
E-mail: humbeccf@ct.ufrn.br
59.072-970 - Natal - RN - Brazil

Abstract - The microstrip antenna patch is analyzed and designed using the full wave
model of the Transverse Transmission Line (TTL) in conjunction with the Transmission
Line Model. The TTL method starts with the Maxwell equations for achieve the general
electromagnetic fields in any dielectric region. Are obtained a set of equations where the
electromagnetic fields in x and z directions are determined as a function of the
electromagnetic field in y direction. This efficient method provides an accurate result for
the propagation constant. From the propagation constant the effective dielectric
constants (εεe) is obtained and applied in the microstrip antennas patch theory
providing precise values for the patch parameters as the E-plane and H-plane radiation
pattern, patch dimensions, antenna efficiency, bandwidth, quality factor and fractional
resonant frequency. Numerical results for these parameters are presented.

I. INTRODUCTION

The microstrip rectangular-patch antenna consists of a radiating patch on one side of a

dielectric substrate which has a ground plane on the other side. This antenna can receive an
overlay substrates, and are shown in the Fig. 1 a) and b).

(a) (b)

Fig. 1. Configuration of a) a microstrip rectangular-patch antenna and b) a microstrip patch

antenna with overlay.

In the modern communications, reduced dimensions, lightweight and low cost are required.
The microstrip antennas present these characteristics and can be used in many applications
over the broad frequency range from 100 MHz to 50 GHz.
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 12

In this theory is used the Transverse Transmission Line (TTL) [2] method, in conjunction
with the Transmission Line model applied to rectangular-patch antenna presented in the Ref.
[1] to design and analyses the antenna. Various applications of the rigorous TTL method have
been presented by H.C.C. Fernandes et al.[2]-[3]. It is very appropriate for use with microstrip
antennas, to obtain the main design parameters with a high precision. In addition, it is very
convenient when used with semiconductor or with lossy substrates.
The matching between the supply line and the microstrip antenna is provided by a quarter-
wave transformer [3] or a microstrip line.
Due its versatility [4] the microstrip antenna can be used in aircraft or spacecraft
applications [5] in many different configurations, as in a patch antenna reflector array [6],
microstrip patch antenna arrays [7]-[8], square patch [9], wide band array [10], patch antenna
with a ferrite cover layer [11], land mobile satellite communications [12], with various kinds
of substrates [13] and biomedical applications [14]. This work contains previously reduced
published material in the Refs. [15]-[16], for the rectangular microstrip patch antenna using
the TTL method.
In many microstrip patch antenna applications, it is often necessary to include a cover layer
[17]-[21] acting as a radome to protect the structure from environment hazards and keeping
the antenna with low profile.

II. THEORY

The design procedure is shown to the rectangular-patch antenna using the TTL Method [2]
for the following parameters [1]: the element length, the element width, the radiation model,
the conductance, the conductor and substrate losses, the total resistance, the efficiency, the
directive gain, the quality factor and the bandwidth.

A. Design Parameters

1. The element length, L, is obtained evaluating the effective dielectric constant (εe) from
TTL method [2], and is given from [1]:

c
L= − 2 ∆l (1.1)
2 f r εe

where,

∆l = 0,412
(ε e (
+ 0,3) W h + 0,264 )
( )
h (1.2)
(ε e − 0,258) W h + 0,8

2. The element width is calculated as:

−1
c  εr + 1 2
W=   (2)
2 fr  2 
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 13

where c is the light velocity, fr is the operating frequency and, εr is the substrate relative
dielectric constant;

3. The pattern field in the E and H plane for the microstrip radiator element may be treated as
a line resonator with no transverse field variations, using the Transmission Line model [1]. The
fields vary along the length, that is usually one half-wavelength, and the radiation occurs
mainly from the fringing fields at the open-circuited ends. The radiator may be represented by
two slots with a width W, a height h and spaced by a distance L. The radiation pattern in the
H-plane is,

 k oW 
sin cos θ sinθ
 2 
F (θ ) = (3.1)
k oW
cos θ
2

and in the E-Plane is,

 koh 
sin cos φ 
 2   ko L 
F(φ ) = cos cos φ  (3.2)
koh  2 
cos φ
2

where k o = ωo µ oε o is the free space wave-number and h is the dielectric substrate

thickness;

4. The conductance (G) is obtained from,

1 2P I1
G= = rad = (4.1)
Rr V02 120π 2

120π 2
where R r = , is the radiation resistance, and
I1

π
kW 
I1 = ∫ sin 2  o cosθ  tan 2 θ sinθ dθ (4.2)
0
 2 

5. The expressions for the conductor and substrate losses, Rcu and Rdi , respectively, can be
derived by calculating the power losses starting from the loss free field distributions in a closed
resonator model [10].
For the copper (ρ = 1.72x10-7; σ = 5.8x108)
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 14

3
4(µ 0 f r ) hL
2
Rcu = (5.1)
 1

(π ρcu ) W 
2

 
h
Rdi = (5.2)
π ε0εr tan δ LW

6. The total resistance, RT (Ω) is

1 1 1 1
= + + (6)
RT Rr′ Rcu Rdi
Rr
where Rr′ =
2
7. The antenna efficiency is given as
RT
η = 100 (7)
Rr′

8. The directive gain is,

Ge (dB) = 10 log 10 G e (8.1)

where
Ge = η Dw (8.2)
and
2D
DW = (8.3)
1 + g12
4W 2 π 2
D= (8.4)
I 1λ 2o
 π W cosθ  2  2π L 
π sen 2   tan θ sen θ J o  
1  λo   λo 
g12 =
120π 2 ∫
0
G
dθ (8.5)

9. The quality factors Qr , Qdi and Qcu are

c ε
Qr = (9.1)
4 frh
1
Qdi = (9.2)
tan δ
h
Qcu = (9.3)
ds

where ds = (πfµσ)-1/2 is the skin depth associated with the conductor;

Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 15

10. The total quality factor is calculated as

QT = 2π f r RT C (10.1)
or
1 1 1 1 1
= + + + (10.2)
QT Qr Qsw Qdi Qcu

where C =ε0εrWL/2h is the capacitance, and Qsw. Is the surface wave quality factor.

11. The bandwidth, BW(%), is given as function as QT,

S -1
BW = 100 (11)
QT S

for VSWR<S, where S is the limit value for the VSWR.

12. The fractional resonant frequency (∆fr/fr) for a microstrip antenna patch with a dielectric
overlay is,

∆ fr ε e − ε eo
= (12)
fr εe

where εe is the effective dielectric constant with de cover layer and εeo is the effective dielectric
constant less the cover layer.

B. The TTL Method

Considering the microstrip patch antenna, as a session of microstrip line of width W, a set of
equations that represent the electromagnetic fields in the x and z direction as function of the
electric and magnetic fields in the y direction are obtained applying the TTL method. Starting
from the Maxwell equations as follow:

& &
∇ × E = − jωµ H (13.1)
& &
∇ × H = jω ε E (13.2)

The electric and magnetic field can be represented by two components, transverse and
tangential to patch, thus:

& & &

H = Hy + Ht (14.1)
& & &
E = Ey + Et (14.2)
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 16

After several calculations the general equations for the structure in the Fourier Transform
Domain (FTD) are obtained as:

~ −j  ∂ ~ ~ 
E xi = 2 α n E y + ω µo ΓH y  (15.1)
k +γi  ∂ y
i
2

~ −1  ∂ ~ ~ 
E zi = 2 Γ E y + ω µo α n H y  (15.2)
k +γi  ∂ y
i
2

~ −j  ∂ ~ ~ 
H xi = 2 α n H y + ω ε i ΓE y  (15.3)
k +γi  ∂ y
i
2

~ − j  ∂ ~ ~ 
H zi = Γ H +ω ε αnE y  (15.4)
k + γ i2  ∂ y y
i
2 i

where:
γi2 + ki2 = αi2 − Γ2
and αi is the spectral variable with respect to x direction, γi is the propagation constant in y
direction and Γ is the complex propagation in z direction.
The wave equations in the FTD are,

∂ 2 ~ 
2 Ey 
 2 −γ  ~  = 0 (16)
∂ y   H y 

The solutions of (16) for the regions 1 and 2 of the structure in the Fig. 1.a, are:

E y1 = A 1e cosh(γ 1 y)
~
(17.1)
H y1 = A 1h sinh(γ 1 y)
~
(17.2)
~
E y2 = A 2ee −γ 2 y (17.3)
~
H y2 = A 2he −γ 2 y (17.4)

~ ~
The constants A1e , A1h , A 2e and A 2h are calculated as function of the fields E xg and E zg
out of the patch and using the boundary conditions
~ ~ ~
E x1,y = g = E x2,y =g = E xg (18.1)
~ ~ ~
E z1,y= g = E z2,y= g = E zg (18.2)

The constants are obtained as functions of the fields, after various algebraic manipulation.
Applying the constants and the magnetic boundary conditions,

~ ~ ~
 H x1 − H x2 = J zg
~ ~ ~ , for y = g = h (19)
H z1 − H z2 = − J xg

the electromagnetic fields as functions of the current densities are then obtained. Thus, for the
region 1:
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 17

~ sinh(γ 1 y )
~
( ~
E x1 = Z xx J xg − Z xz J zg )
sinh(γ 1 g )
(20.1)

(γ y)
[ (
E y 1 = ( jα n Z xx + ΓZ zx ) J xg + ( jα n Z zx + ΓZ zz ) J zg
~ ~ ~
)] γ cosh
cosh(γ g )
1
1

1
(20.2)

~ sinh(γ 1 y )
~
( ~
E z1 = Z zx J xg − Z zz J zg )
sinh(γ 1 g )
(20.3)

(γ y)
~
Hx 1 = {[(α ΓZ n xx )] [(
+ j(k 12 − αn2 )Z zx J xg + α n ΓZ xz + j(k 12 − αn2 )Z zz J zg
~ ~
)] } ω cosh
µ sinh(γ g)
0
1

1
(20.4)

[
H y 1 = (αn Zzx − j ΓZxx )J xg + (αn Z zz − jΓZ xz )J zg
~ ~
]ω µsinhsinh(γ (γy)g)
0
1

1
(20.5)

(γ y)
~
Hz 1 = {[(α ΓZ n zx )] [(
+ j(k 12 + Γ 2 )Z zx J xg + αn ΓZzz + j(k 12 + Γ 2 )Zxz J zg
~ ~
)] } ω µcosh
0 1
1

γ sinh(γ g) 1
(20.6)

and for the region 2,

~
( ~ ~
)
E x2 = Z xx J xg − Z xz J zg e γ 2 ( g-y ) (21.1)
eγ 2 ( g -y)
~
[ ~
(
E y2 = − ( jα n Zxx + ΓZ zx ) J xg + ( jα n Zzx + ΓZ zz ) J zg
~
)] γ2
(21.2)
~
( ~ ~
)
E z2 = Z zx Jxg + Zzz J zg eγ 2 ( g-y ) (21.3)
γ ( g− y)
~
Hx 2 = {[( )] [( ~ e2
α nΓZxx + j( k 22 − αn2 ) Zzx J xg + α nΓZ xz + j( k 22 − αn2 ) Zzz Jzg
~
ω µ0
)] } (21.4)
γ 2 ( g-y )
sinh(γ 1 y )
[ ~ e
H y2 = − (α n Zzx − j ΓZxx )J xg + (α n Zzz − jΓZxz )J zg
~
ωµ0] (21.5)

where,
k2
Z xx = (22.1)
k 1k 4 - k 2 k 3
k4
Z xz = (22.2)
k1 k 4 - k 2 k 3
- k1
Z zx = (22.3)
k 1k 4 - k 2 k 3
- k3
Z zz = (22.4)
k 1k 4 - k 2 k 3
and,
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 18

−α n Γ
k1 = [
γ coth(γ 1 g ) + γ 1
ωµ0γ 1γ 2 2
] (23.1)

−j
k2 = [
γ (k 2 − αn2 )coth(γ 1g ) + γ 1 (k 22 − αn2
ωµ0γ 1γ 2 2 1
)] (23.2)

k3 =
j
[
γ (k 2 + Γ ) coth(γ 1 g ) + γ 1(k 22 + Γ )
ω µ0γ 1γ 2 2 1
] (23.3)

α nΓ
k4 =
ωµ0γ 1γ 2 2
[
γ coth(γ 1 g ) + γ 1 ] (23.4)

Applying the boundary conditions, the equations of the current densities as functions of the
tangential electric fields are given by:

 k1E ~ ~ ~
xg + k 2 E zg = Jzg
 ~ ~ ~ (24.1)
k 3 E xg + k 4 E zg = − J xg
or in the other order,
E ~ ~ ~
xg = Z xx Jxg + Z xz Jzg
~ ~ ~ (24.2)
 E zg = Zzx Jxg + Zzz Jzg

In matrix form this equation system can be given as:

~ ~
 Z xx Z xz   J xg   E xg 
Z ⋅~  =  ~ 
Zzz   J zg   Ezg 
(25)
 zx

The Moment method is applied to eliminate the electric fields and to obtain the
homogeneous matrix equation for the calculation of the complex propagation constant. After
some algebraic manipulations, the matrix equation is obtained as:

 Axx Axz  a xg  0

⋅ =
A Azz   azg  0
(26)
 zx

The roots of this matrix are the attenuation (α) and the phase (β) constants, and the
effective constant dielectric is then obtained from

2
β
εe =   (27)
 k0 

The electromagnetic fields for the rectangular patch microstrip antenna with overlay shown
in Fig. 1.b, are calculated using the TTL method and are shown in the general form for the
overlay region 2, in the x direction as
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 19

~
Ex2 =
1
K + γ 22
2
2
{[(α2
n [ ]
− Γ 2 ) cosh γ 2 ( y − h1 ) −

 2E F ~
 C D
[
 αn − Γ 2  senh γ 2 ( y − h1 )  E x g

] (28.1)

 E F ~ 
[
+ jαn Γ  −  senh γ 2 ( y − h1 ) Ezg 
 C D 
]
~
Hx 2 =
j
ωµ0γ 2 ( K2 + γ 2 )
2 2 { [ [
jαn Γ ( K22 + γ 22 ) senh γ 2 ( y − h1 ) − ]
 2E 2 F ~
 C D
[ 
]
 K2 + γ 2  cosh γ 2 ( y − h1 )  Ex g
(28.2)
[
+ (α γ2 2
n 2 − Γ K ) senh[γ ( y − h )] −
2 2
2 2 1

 2 2F 2 2 E ~ 
 D C
[
 αn γ 2 + Γ K2  cosh γ 2 ( y − h1 )  Ezg 
 
]
For the upper region 3 the electromagnetic fields are given by, for x direction,

1  α n2 Γ 2  ~  1 1  ~  −γ y − h − h
−  E x g + jα n Γ  −  E z g  e 3 ( 1 2 )
~
E x3 =  (29.1)
K3 + γ 32
2
 C D  C D 
~ −j   γ 3 K3  ~
2
 α n γ 3 Γ 2 K32  ~  γ 3 ( y −h1 −h2 )
2
Hx3 = α
 n 
j Γ + +
 xt 
E +  Ez g e (29.2)
(
ωµ0γ 3 K32 + γ 32  ) D C  D C  

where C, D, E and F are given by:

γ 2 ε3
C = cosh(γ 2 h2 ) + senh(γ 2 h2 ) (29.3)
γ 3 ε2
γ3
D = cosh(γ 2 h2 ) + senh(γ 2 h2 ) (29.4)
γ2
γ 2 ε3
E= cosh(γ 2 h2 ) + senh(γ 2 h2 ) (29.5)
γ 3 ε2
γ3
F= cosh(γ 2 h2 ) + senh(γ 2 h2 ) (29.6)
γ2

Identical procedure using the boundary conditions and the moment method to calculate the
complex propagation and the effective dielectric constant in (26)-(27) is used for the overlay
microstrip antenna.

III. RESULTS

The results for the patch parameters were obtained using a PENTIUM 133 MHz and
programs in the FORTRAN 77 language to calculate and to apply the effective dielectric
constant in the microstrip antenna theory. MATLAB was used to generate all 3D graphs.
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 20

For exemplify the TTL method application, is used a material with relative dielectric
constant εr=4.4 and thickness h=1.53 mm. To determine the propagation characteristics, such
as the effective dielectric constant (εe), the patch dimension and microstrip line characteristic
impedance (Zo) is used the closed formula provided by reference [1], and the computational
program that uses this TTL method. From (2) for frequency f=2.0 GHz the result is W=4.56
cm and for f=9.0 GHz, W=1.01 cm. For the effective dielectric constant, the computational
program provide εe=4.06 for f=2.0 GHz and εe=3.98 for f=9.0 GHz. The values from the TTL
method are more accurate than the values shown by Ref. [1], because the TTL is a more
rigorous method. Replacing the results in (1.1) and in (1.2), one obtains L=3.58 cm for f=2.0
GHz and L=0.69 cm for f=9.0 GHz.
For the matching between the antenna and the feed the TTL method can be used for design
of the wave quarter transformer or microstrip line. This method gives the characteristic
impedance and effective dielectric constant of these devices. The low-pass prototype filters
theory was utilized. In Ref. [3] a computational program were developed to provide the
number of transformer sections and their main characteristics, necessary for the knowledge of
the input and output impedances that are evaluated by computational program that utilizes
the TTL method, resulting Zc=5.60 Ω (for fr=2.0 GHz) and Zc=20.18 Ω (for fr=9.0 GHz).
With these values, the computational program entitled PACMO (Computer Aided Program at
Microwave) [3] was used to obtain the impedance transformer parameters. For the microstrip
line the computational programs that utilize the TTL method (ICLMSS and EELMSS) that
calculate the microstrip characteristic impedance and the effective dielectric constant were
used.
The radiation pattern, quality factor, efficiency, bandwidth and the fractional resonant
frequency are then calculated using the effective dielectric constant obtained by the TTL
method.
The Fig. 2.a shows the element length as function of frequency, where the continuous line
show the behavior of the TTL method for various relative permittivities. These results are in
according with the results of the Ref. [1]. In the Fig. 2.b results in 3D are present for the
length and height as function of the frequency and was used h = 0.318 cm.

100

ε r = 2.32
L(cm)
4.4

10 10

8
9.8 L(cm)
6

4
1.0
2 0
this work 2
xxxx Ref. [1] 0
0 4
2 6
4 h x 10-1 (m m )
0.1 6 8
f (GHz) 8
0.1 10 10.0 10
f (GHz) 10

(a) (b)
Fig. 2. a) Patch length L (cm), as a function of the frequency f (GHz) for various εr and b) 3D
graphic of the length (L) as a function of the frequency and substrate height for W=9.8
cm and εr=2.32.
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 21

Figs. 3.a and 3.b show the radiation pattern in the H-plane and the E-plane, respectively,
for the rectangular patch antenna with W=4.56 cm, h=1.53 mm, εr = 4.4 and f=2.0 GHz.
Figs. 4.a and 4.b show the radiation pattern to the H-plane and the E-plane , respectively,
for the rectangular patch with W=1.01 cm, h=1.53 mm, εr = 4.4 and f=9.0 GHz, utilizing the
effective dielectric constant of the TTL method.
90 90
120 60 120 60
-10 dB

150 30 150 -2 dB 30

-40 dB -3.5 dB
180 0 180 0
(a) (b)
Fig. 3. a) H-plane and b) E-plane radiation patterns, for the rectangular-patch antenna with
f = 2.0 GHz.
90 90
120 60 120 60
-10 dB
-1 dB
150 30 150 30

-30 dB -2.5 dB
180 0 180 0

(a) (b)
Fig. 4. a) H-plane and b) E-plane radiation patterns for the rectangular-patch antenna with
f = 9.0 GHz.

The antenna efficiency is given by the ratio of the radiated to the input power, and is
expressed by (11). Fig. 5 shown the efficiency, η, as functions of frequency obtained with
the use of the TTL method with εe for various dielectric constants and substrate heights. They
are identical to the results of Ref. [1]. Note that the he efficiency increases with the increase of
the substrate thickness.

100

η (%)
h(cm) = 0.318

εr
80 2.32 0.159

60
2.32 0.08

40

2.32 0.127

20
0.0635
9.8

9.8 0.0254
0 9.8

0.1 1.0 10.0

f (GHz)

Fig. 5. Efficiency as a function of frequency for various substrates.

Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 22

In Fig. 6 the Bandwidth, BW, is presented as a function of frequency, for various dielectric
constants values. Typical values are of the order of a few percent.

20

h(cm) = 0.318
10

εr
2.32 0.159
BW(%)
2.32 0.08

2.32 0.127
1

0.0635
9.8 9.8 0.0254

9.8

0.1
0.1 1.0 10
f(GHz)

Fig. 6. Bandwidth as function of frequency for various substrate.

The particular case of a rectangular patch is the square patch, where W = L. The square
patch has been used to avoid higher-order modes (that could disturb the radiation pattern and
the polarization) on to obtain a higher radiation efficiency (or low quality factor). The Figs. 7
and 8 show the quality factor, Qr , and bandwidth, BW, respectively, as functions of the
substrate electrical thickness (t/λdo), where λdo = λo/εr . In this case fr = 1.0 GHz [9].The
overall Q is dominated by the radiation Qr for substrate thickness greater than approximately
h/λdo =0.01.
4
10
σ = 5.7x107
L = 301λo = λdo/2
W= L

103
80

QR(%)
60

2
10
40

εr = 9.8 20 0

10
1 2.76 2
0
this work 2.32 4
1
XX Ref [1] 2 6 f (GHz)
3
4 8
1 5
0 0.02 0.04 0.06 h/λdo (x10-2) 6 10
h/λdo

(b)
Fig. 7. a) The radiation quality factor ,Qr , as a function of substrate electrical thickness
(h/λdo) for various εr and b) a 3D representation of the quality factor as function of the
frequency and the electrical thickness.
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 23

10

9 σ = 5.7x107
L = 301λo = λdo/2
8
W= L

7 εr=2.32 8

6
6
2.76
5
BW(%)
4
4 this work
XX Ref[1] 9.8
2 0
3
2
2 0
1 4
2 6
1
3
f (GHz)
4 8
0 5
0 0.0 0.02 0.03 0.04 0.05 0.06 h/λdo (x10-2 ) 6 10
1
h/λdo

Fig. 8. a) Bandwidth, BW(%), for VSWR=2, as a function of the substrate electrical thickness
(h/λdo), with a square patch and b) 3D graphic of the Bandwidth, BW(%), as a function
of frequency and of substrate thickness.

Bandwidths from about one percent, for a substrate thickness of 0.01 t/λdo to about six
percent for a substrate thickness of 0.06 t/λdo, are obtained, depending on the aspect ratio of
the antenna. In the fig. 9 is showed the resonant frequency in the microstrip patch antenna
covered with a dielectric layer.

∆fr/fr (%)
∆fr /fr (%)
4.0 6.0

−1
2 d=2.0 cm −1
2
C  ε r + 1 C  ε r + 1
3.5 W=   W=  
2 fr  2  0.5 5.0 2 fr  2 
h=0.159 cm h=0.159 cm d=0.5 cm
er1 =2.5 er 1 =2.5
3.0
er2 =2.5 er 2 =3.2 (ice)
This work 4.0
2.5 xx Ref. [1] This work
xx Ref. [1]
2.0 3.0
0.1 0.1
1.5
2.0

1.0

0.02 1.0 0.02

0.5

0.0 0.0
0.0 2.0 4.0 6.0 8.0 10.0 0.0 2.0 4.0 6.0 8.0 10.0

f r (GHz) f r (GHz)
(a) (b)
Fig. 9. The fractional resonant frequency of a microstrip antenna with substrate dielectric
(εr1=2.5 ) covered with a dielectric layer with a) εr2=2.5 and b) εr2=3.2 (ice) as a
function of resonant frequency. h is the substrate thickness and d is the overlay
thickness.
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 24

The dielectric cover offers such a protection and keeps the antenna with low profile. It is
more important to determine the effect of a dielectric layer on the resonant frequency of
microstrip antennas in order to introduce appropriated corrections in the design of the
antenna.

IV. CONCLUSIONS

The rectangular and square patch antenna were analyzed using The TTL method. Results
for the patch length, efficiency, quality factor and bandwidth were shown confirming the
exactness of the TTL method applied to patch antenna, showing the influence of the effective
dielectric constant in these parameters. A value more accuracy of the effective permittivity
gives a better value of the element length, and other parameters. Graphics that show the
radiation patterns in the E-plane and H-plane, patch dimensions, antenna efficiency,
bandwidth, quality factor and fractional resonant frequency were presented.
The microstrip rectangular patch was studied and the influence of the overlay in the
resonant frequency as a function of the effective dielectric constant was shown. The fractional
variation of the resonant frequency increase with the increase overlay height.
The Transverse Transmission Line is an efficient and accurate method for the analysis and
design of rectangular patch microstrip antennas. It is a very versatile method that can be used
with a loss less dielectric or a semiconductor substrate in variety of planar structures,
operating at the microwave frequencies.
This work was supported by CNPq and CAPES.

REFERENCES

[1] I.J. Bahl and P. Bhartia, “Microstrip Antennas”, Dedham, MA, Artech House, Inc., 1980.
[2] H. C. C Fernandes, “Attenuation And Propagation In Various Finline Structures”,
International Journal of Infrared and Millimeter Waves, Vol. 17, Nº 08, pp. 1419-1430,
Aug. 1996.
[3] H. C. C. Fernandes, A. J. Giarola and D. A. Rogers, "PACMO: A Comprehensive CAD
Package for Microwave Devices", IEEE Transactions on Education, Vol. E-26, No. 4,
pp. 162- 164, Nov. 1983.
[4] S. A. Bokhari, Jean-François Z., J. R. Mosig and F. E. Gardiol, “A Small Microstrip Patch
Antenna with a Convenient Tuning Option”, IEEE Trans. Antennas Propagation, Vol.
44, No. 11, pp.1521-1528, Nov. 1996.
[5] C. Balanis, “Antenna Theory”, New York, Harper & Row Pub. Inc., pp 487-496, 1982.
[6] R. D Javor, X. D. Wu, K. Chang, “Design and Performance of a Microstrip Reflectarray
Antenna”, IEEE Trans. Antennas Propagation, Vol. 43, No. 09, pp. 932-939, Sep.
1995.
[7] S. Kanamaluru, M. Li and K. Chang, ”Analysis and Design of Aperture-Coupled
Microstrip Patch Antennas Arrays Fed by Dielectric Image Line”. IEEE Trans. Antennas
Propagation, Vol. 44, No. 07, pp. 964-974, Jul. 1996.
[8] Q. Song and X. Zhang, “A Study on Wideband Gap Coupled Microstrip Antenna Array”.
IEEE Trans. Antennas Propagation, Vol. 43, no. 03, pp. 313-317, Mar. 1995.
[9] K. R. Carver and J. W. Mink, “Microstrip antenna technology”. IEEE Trans. Antennas
and Propagation, Vol. AP-29, No. 01, pp. 1-23, Jan., 1981.
[10] H. Pues, J. Bogaers, R. Pieck and A. Van de Capelle, “Wide-band quasi-log-periodic
microstrip antenna”. IEE Proc. , Pt. H, Vol. 128, No. 03, pp 159-163, Jun 1981.
Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998. 25

[11] Y. Hung and D. Yang, “Characteristics of Switchable Ferrite Microstrip Antennas”,

IEEE Trans. Antennas and Propagation, Vol. 44, No. 08, pp. 1127-1132, Aug. 1996.
[12] J. I. Alonso, J. M. Blas, L. E. Garcia, J. Ramos, J. de Pablos, G. G. Gentili, J. Gismero
and F. Pérez, “Low cost electronically steered antenna mobile satellite communications”,
IEEE Trans. Microwave Theory Tech., vol 44, No. 12, pp. 2438-2449, Dec. 1996.
[13] K. Kanogawa, T Tokumitsu and M. Aikawa, “Multifrequency microstrip antenna using
alumina ceramic/polymide multilayer dielectric substrate”, IEEE Trans. Microwave
Theory Tech., vol 44, No. 12, pp. 2431-2437, Dec. 1996.
[14] L. Dubois, J. P. Sozanski, V. Tessier, J. C. Camart, J. J. Fabre, J. Pribetich and M. Chivé,
“Temperature control and thermal dosimetry by microwave radiometry in hyperthermia”,
IEEE Trans. Microwave Theory Tech., vol. 44, No. 10, pp. 1755-1761, Oct. 1996.
[15] A.R.N. Farias and H.C.C. Fernandes, “Microstrip antenna design using the TTL
method”. 1997 SBMO/IEEE MTT-S International Microwave and Optoelectronics
Conference, Natal-RN, Brazil, pp. 291-296, Aug. 1997.
[16]A.R.N. Farias, O.S.D. Costa and H.C.C. Fernandes, “A Software for Microstrip Design
using The TTL Method”. 11th COMPUMAG Conference on the Computation of
Electromagnetic Fields, Rio de Janeiro-RJ, pp. 433-434, Nov. 1997.
[17] A. K. Bhattacharyya, “Characteristics os Cricular Patch on Thick Substrate and
Superstratre”, IEEE Trans. Antennas and Propagation, Vol. 39, No. 07, pp. 1038-1041,
Jul. 1991.
[18] I. J. Bahl and S. S. Stuchly, “Analysis of a Micrstrip Covered with a Lossy Dieletric”,
IEEE Trans. Microwave Theory Tech., vol. 28, No. 02, pp. 104-109, Fev. 1980.
[19] S.-S. Zhong, G. Liu and G. Qasim, “Closed Form Expressions for Resonant Frequency of
Rectangular Patch Antennas with Multidielectric Layers”, IEEE Trans. Antennas and
Propagation, Vol. 42, No. 09, pp. 1360-1163, Set. 1994.
[20] Y. Tu and D. C. Chang, “Effect of a Cover Layer on the edge Admittance of a Wide
Microstrip”, IEEE Trans. Antennas and Propagation, Vol. 39, No. 03, pp. 354-358, Mar.
1991.
[21] R. Shavit, “Dielectric Cover Effect on Rectangular Microstrip Antenna Patch”, IEEE
Trans. Antennas and Propagation, Vol. 42, No. 08, pp. 1180-1184, Aug. 1994.