ENGINEERING IDEA

FERMI-DIRAC STATISTICS DISTRIBUTION ON SEMICONDUCTORS

BY:

GROUP 1

1. ANAYOSI BR GINTING (4183322002)

2. GRACE DITA MARIA NAIBAHO (4183121055)

3. PATRICIA ROPINDO SINABUTAR (4182121014)

CLASS : BILINGUAL PHYSICS 2018

COURSES : SOLID STATE

LECTURER : Prof. Dr. MAKMUR SIRAIT, M.Si

PHYSICS

DEPARTMENT OF PHYSICS EDUCATION

FACULTY OF MATH AND SCIENCE

MEDAN STATE UNIVERSITY

2021
 FOREWORD

The author would like to thank God Almighty for the abundance of His healthy
blessings, both in the form of physical and mental health, so that the author was able to
complete this Idea Engineering.

The author certainly realizes that this assignment is still far from perfect and
there are still many mistakes and shortcomings in it. For this reason, the author expects
criticism and suggestions from readers, so that we can complete this task better. Then
we also apologize if there are many mistakes in writing this assignment.

The author would also like to thank all parties, especially the subject lecturers
Introduction to Solid Matter Physics who has guided us in writing this assignment.

Thus this task we made, hopefully this task can be useful. Thank you.

Medan, May 2021

Compiler

Group 1

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 TABLE OF CONTENTS

FOREWORD......................................................................................................................i

TABLE OF CONTENTS..................................................................................................ii

PIG.....................................................................................................................................1

PRELIMINARY................................................................................................................1

1.1 Problem Background...............................................................................................1

1.2 Problem Formulation...............................................................................................1

1.3 Purpose.....................................................................................................................1

1.4 Benefits....................................................................................................................2

1.5 Writing Method........................................................................................................2

CHAPTER II.....................................................................................................................3

THEORITICAL REVIEW................................................................................................3

2.1 Fermi-Dirac Statistical Distribution Function.........................................................3

CHAPTER III....................................................................................................................6

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DISCUSSION....................................................................................................................6

3.1 Semiconductors........................................................................................................6

3.2 Fermi-Dirac Distribution Function in Semiconductors...........................................9

CHAPTER IV..................................................................................................................16

CLOSING........................................................................................................................16

4.1 Conclusion.............................................................................................................16

4.2 Suggestions............................................................................................................16

BIBLIOGRAPHY...........................................................................................................17

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 PIG
PRELIMINARY

1.1 Problem Background

In everyday life we often encounter the use of semiconductors, especially in

electronic devices because their conductance can be changed by injecting other
materials (commonly called doping materials). Materials that are said to be
semiconductors are materials withelectrical conductivity which is between insulator and
conductor. A semiconductor is asinsulator at very low temperatures, but at room
temperature it behaves as conductor.

Based on the purity level of the semiconductor crystal itself, semiconductors are
divided into two types, namely intrinsic semiconductors and extrinsic semiconductors.
The conductivity of the semiconductor will depend on the material of the semiconductor
itself. Intrinsic semiconductors have a lower conductivity than extrinsic semiconductors,
so to increase the conductivity of the semiconductor, other electrons are filled (doping)
in the conduction band or holes (electron excitation) are made in the valence band. In
the process of filling electrons in this energy band, the distribution of electrons follows
the Fermi-Dirac distribution. Therefore, in this paper, we will discuss further the
application of the Fermi-Dirac statistical distribution function to semiconductors.

1.2 Problem Formulation

Based on the description above, the problem is formulated as follows.

1. What are the characteristics of a semiconductor?

2. How are Fermi-Dirac statistics applied to semiconductors?

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1.3 Purpose

The purpose of writing this paper is as follows.

1. To know the characteristics of the semiconductor.

2. To find out the application of Fermi-Dirac statistics on semiconductors.

2
1.4 Benefits

The benefits of writing this paper are as follows.

1. Can know the characteristics of the semiconductor.

2. Can know the application of Fermi-Dirac statistics on semiconductors.

1.5 Writing Method

The method used in this paper is a literature review method, where the author
collects related information about the distribution of Fermi-Dirac and semiconductors
from the literature as well as from internet sources which are then compiled
systematically.

3
4
 CHAPTER II
THEORITICAL REVIEW

2.1 Fermi-Dirac Statistical Distribution Function

For each type of statistic it is assumed that the entropy is proportional to the
logarithm of the thermodynamic probability, and that, at equilibrium, the entropy of the

system is maximum. This means ln W maximum value, so that d ( ln W ) =0

n!
W =Π
Based on the equation Ni ! ( n−Ni ) ! , a new equation will be obtained as
follows.

n!
W =Π
Ni ! ( n−Ni ) !
n!
ln W =Σ ln
(
Ni ! ( n−Ni ) ! )
ln W =Σ( ln n ! − ln ( Ni ! [ n − Ni ] ! ) )
ln W = Σ(ln n ! − ln Ni ! − ln [ n − Ni ] )

ln W = Σ(n ln n − ln Ni ! − ln [ n − Ni ] ) ...........................................................(1)

Because the number of cells is very large, thus n and Ni are very large numbers,
Stirling's approximation can be used, so that the equation

ln W = Σ(n ln n − ln Ni ! − ln [ n − Ni ] ) will be like the following

ln W = Σ(n ln n − ln Ni ! − ln [ n − Ni ] )
ln W = Σ ( n ln n − Ni ln Ni − ( n − Ni ) ln [ n − Ni ] )
ln W = Σ ( n ln n − Ni ln Ni − n ln [ n − Ni ] + Ni ln [ n − Ni ] )

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 ln W = Σ ( n ln n − Ni ln Ni − n ln [ n − Ni ] + Ni ln [ n − Ni ] )

d ln W = d [ n ln n + Σ− Ni ln Ni − n ln [ n − Ni ] + Ni ln [ n − Ni ] ] …………(2)

If the number of particles and the total energy were constant, the following equation
would exist.

dN = Σ dNi = 0
dU = Σ wi dNi = 0

To simplify the calculation, multiply the first equation by (–ln B) and the second

equation by (− β) .

dN x (−ln B )= Σ dNi x (−ln B ) = −ln B Σ dNi = 0 .................................(3)

dU x (−β ) = Σ wi dNi x(− β ) = −β Σ wi dNi = 0 .....................................(4)

Equation (3) and equation (4) and then add to equation

n − Ni
(
d ln W = Σ ln
Ni )
dNi = 0
, then a new equation will be formed as follows.

n − Ni
−ln B Σ dNi + (−β Σ wi dNi ) + Σ ln
Ni ( dNi = 0 )
n − Ni
Σ−ln B dNi + Σ−β wi dNi + Σ ln
Ni ( )
dNi = 0

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 n − Ni
(
Σ ln
Ni
−ln B −β wi dNi = 0 )
................................................................(5)

n − Ni
Because of the tribe
(
Σ ln
Ni
−ln B −β wi ) and dNi mutually independent,

n − Ni
in the sense that if dNi = 0, then
(
Σ ln
Ni )
−ln B −β wi ≠ 0
and vice versa if

n − Ni Ni
(
Σ ln
Ni
−ln B −β wi = 0 )
, then dNi 0. However, so that n defined, then

n − Ni
(
Σ ln
Ni
−ln B −β wi ) must be equal to zero. Therefore, a new equation will be
obtained as follows.

n − Ni
(
Σ ln
Ni
−ln B −β wi = 0 )
n − Ni
ln −ln B −β wi = 0
Ni
n − Ni
Ni
ln = β wi
B
n − Ni
ln = β wi
B Ni

n − Ni
exp β wi =
B Ni

n − Ni
B exp βwi =
Ni
n
B exp βwi = − 1
Ni
n
B exp ( β wi) + 1 =
Ni

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 n
= B exp ( β wi) + 1
So got Ni , so that

Ni 1
=
n B exp ( βwi) + 1 …………………………………………….(6)

Equation (6) is known as the Fermi-Dirac distribution function for the maximum
thermodynamic probability state.

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 CHAPTER III
DISCUSSION

3.1 Semiconductors

Semiconductors are basic elements of electronic components such as diodes,

transistors and an IC (integrated circuit). Called semi or half conductor, because this
material is not a pure conductor. Metallic materials such as copper, iron, tin are called

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good conductors because metals have an arrangement of atoms in such a way that the
electrons can move freely.

Semiconductor materials that are widely known for example are Silicon (Si),
Germanium (Ge) and Gallium Arsenide (GaAs). Germanium was once the only known
material for making semiconductor components. But lately, silicon became popular after
finding a way to extract this material from nature. Silicon is the second most abundant
material on earth after oxygen (O2). Sand, glass and other rocks are natural materials
that contain lots of silicon.

The atomic structure of silicon crystals, one atomic nucleus (nucleus) each has 4
valence electrons. A stable atomic nuclear bond is if it is surrounded by 8 electrons, so
that the 4 electrons of the crystal atom will form covalent bonds with neighboring
atomic ions. At a very low temperature (0oK), the atomic structure of silicon is
visualized as shown in the following figure.

Figure 1. Two-dimensional structure of Silicon crystal

Covalent bonds prevent electrons from moving from one atomic nucleus to another.
In such conditions, the semiconductor material is an insulator because there are no
electrons that can move to conduct electricity. At room temperature, some covalent
bonds are released due to heat energy, thus allowing electrons to be released from their

10
bonds. However only a small amount can be dislodged, making it impossible to be a
good conductor.

Physicists, especially those who mastered quantum physics at that time, tried to
doping this semiconductor material. Doping is intended to get more and more
permanent free valence electrons, which are expected to be able to conduct electricity.

 Energy Tape
Departing from the atomic theory, it is stated that the atom consists of an atomic
nucleus and electrons that surround the atomic nucleus, electrons are in atomic shells
based on certain energy levels. The further away from the nucleus of the atomic shell
occupied by the electron, the greater the binding energy of the electron, and vice versa.
The energy levels in a crystal can be like a single atom (see figure 2). The interactions
between atoms in the crystal only occur in the electrons in the outermost shell (valence
electrons). According to Paulli's principle, at an energy level there can be no more than
one electron in the same state. So if there is more than one electron in the same state,
there will be a shift in energy levels, so that energy levels never overlap.
inner shell
electron
Band Energy
energy
level
Energy Increae
outer
shell
electron
energy
level

Figure 2. Energy levels in single atoms and energy bands in crystals

Determination of energy bands is discussed in detail in quantum physics, but in a
simple way, will be shown as an example of determining the structure of energy bands
in crystalline solid materials. Figure 3 shows an illustration of the energy band structure
for insulating crystals, semiconductor crystals, and insulating crystals. Where in a state
of equilibrium (equilibrium), the energy band is split into two parts and separated by a
region where electrons cannot move or operate, this region is called the forbidden

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region (= forbidden gap or band gap). The upper band is called the conduction band,
and the lower band is called the valence band.

Figure 3. Energy band structure for: a) insulating material, b) semiconductor

material, c) conducting material

The insulator has an energy band structure as shown in Figure 3(a), where the
conduction band is not filled with electrons (empty), while the valence band is
completely filled with electrons, and the energy gap is quite large ~ 9 eV, so that the
insulating material cannot conduct electricity. And in order for electrons from the
valence band to move to the conduction band, external energy is needed > 9 eV.
Semiconductors have an energy band structure as shown in Figure 3(b), where some of
the electrons in the valence band move to the conduction band, leaving holes in the
valence band. The ease with which electrons move towards the conduction band is due
to the small energy gap. The conductor has a crystalline structure as shown in Figure
3(c), where the conduction band is partially filled with electrons, and there is no energy
gap between the valence band and conduction band, so the electrons in the valence band

12
are very easy to move towards the conduction band. This is what causes the conductor
material to be very easy to conduct electricity.

As an illustration of the magnitude of the binding energy of electrons in atomic

shells, the Bohr atomic model has been formulated: as an atom the view is a hydrogen
atom, where the binding energy is inversely proportional to the square of the quantum
number n which indicates the electron shell number. Based on the level of purity of the
material, semiconductor materials are divided into 2, namely intrinsic semiconductors
(which have not been polluted), and extrinsic semiconductors (which have undergone
impurities).
3.2 Fermi-Dirac Distribution Function in Semiconductors

The application of the Fermi-Dirac distribution function to semiconductors is found

in the filling of energy bands in the semiconductor. Where the electrons from the
conduction band that will fill the valence band in the semiconductor must have a large
energy exceeding the energy gap of the semiconductor itself, so that the material will be
conduction and will conduct an electric current.

The energy band diagram for semiconductor materials is similar to that of

insulating materials but differs in the width of the energy gap. The energy gap in the
semiconductor is only about 1 eV. Germanium and silicon are semiconductor materials.
The atomic configurations of Ge [Ar] 3d10 4s2 4p2 and Si [Ne] 3s2 3p2; Both types of
atoms have 4 electrons in their outermost energy level. The energy band overlap in the
outermost energy level will make the energy band completely filled with 8 electrons.
Because the energy gap is narrow, if the temperature increases, some of the electrons in
the valence band rise to the conduction band by leaving an empty place (hole) in the
valence band. This situation is illustrated in Figure 4. Both electrons that have been in
the conduction band and holes in the valence band will act as charge carriers for the
occurrence of electric current. Electrical conductivity increases rapidly with increasing
temperature. At room temperature, a number of electrons are thermally stimulated and
are able to rise to the conduction band and leave holes in the valence band. The
electrical conductivity mentioned above is called intrinsic conductivity.

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 Empty conduction band

Full valenci Band

intrinsic semiconductor at 0 K

conduction band almost empty

Valenci Band almost full

Figure 4. Energy band diagram of a semiconductor. The number of

electrons goes up

The conductivity of semiconductor materials can also be increased by the addition

of certain foreign atoms (impurities, impurities). If the impurity atom has 5 outer
electrons (eg P or As) then there will be an excess of one electron per atom. These
excess electrons will occupy an energy level slightly below the conduction band (a few
tenths of eV) and with a little extra energy will very easily move into the conduction
band and contribute to electrical conductivity. Such impurity atoms are called donors
(because they donate more electrons) and semiconductors with donors are called n-type
semiconductors.

If the impurity atom has 3 outer electrons (eg B or Al) then there will be an excess
of one hole per atom. This excess hole will occupy an energy level slightly above the
valence band and with a little additional energy it will be very easy for electrons to
move from the valence band to holes above it and leave holes in the valence band which
will contribute to electrical conductivity. Such an impurity atom is called an acceptor
(because it accepts electrons from the valence band) and a semiconductor with an
acceptor is called a p-type semiconductor. To make an adequate change in conductivity
in a semiconductor material, it is sufficient to add about 1 impurity per million atoms of
the semiconductor.

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 Fermi-Dirac . distribution
We assume that the electron distribution follows the Fermi-Dirac distribution.

.....................................................(7)

WhereFcalled Fermi Energy or Fermi lever. A non-interacting system with discrete

quantum states. The system is contacted with a reservoir at temperature T. Withi and
jas the total energy of the particles in states i and j, respectively. Where Wij is the
probability of an electron from state i moving to state j in unit time. The average
number of particles that make up the transition from state i to state j is.

Temperature (T) is included because in the transition there will be absorption or

emission of energy from or by the reservoir. Successively, the average number of
particles moving from state j to state i is

We use the principle of 'detailed balance' which states that in a state of thermal
equilibrium, the two states must coincide, so that.

.............................................................(8)

If fi is the average number of electrons in state i, based on the Pauli exclusion

principle, each state can only be filled by 0-1 electrons at a certain time. Hence 0 fi 1,

15
and fi is also the configuration fraction occupied by state i. Similarly, 1-fi is the
configuration fraction in which state i is empty (no electrons). The number of transitions
from state i to state j with a large M configuration is

Because the transition only occurs when state i is full while state j is empty, then.

The above equation is equal to/equivalent to the following equation.

or by entering equation (8), so that

This equation applies to a certain state i and a certain state j. Therefore, both sides are
independent of i and j ;

The above equation represents the magnitude of F, here is the result of the above equation for
fi.

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Based on equation (7), at a temperature of 0 K all states below a certain energy will be filled
with electrons while all states above energy will be empty. Where is T0, which is obtained
from equation (7) and f(F) = .

This means that; For energies below the Fermi energy (Fermi level), the state will be
filled by electrons (f() > for  < F) and for energies below the Fermi level, the state
will be empty (f() < for  > F).

For energies much greater than the Fermi energy (-F >> kBT) we can solve with
the Fermi-Dirac distribution using the Maxwell-Boltzmann distribution approximation.

Because 1+ exp (-F)/ kBT) ~ exp ((-F)/ kBT) for-F >> kBT this is called the non-
degenerate case. A semiconductor that uses the application of Fermi-Dirac statistics is
called degenerated.

 Density Equation
We use the Fermi-Dirac distribution (7) in the following equation.

So for the electron density the following equation will apply.

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 The same equation applies to holes with density p for energies below the minimum
valence band band v.

The electron and hole densities can be calculated more clearly by using a parabolic band
approximation with an isotropic effective mass.

With the effective density of the state as follows.

And with the Fermi integral as follows.

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 In the non-degenerate case c - F >> kBT and F - v >> kBT, the above Fermi
integral can be replaced by a simpler function, ie.

So the electron density will be

..(9)

 Semiconductor Intrinsic
Pure semiconductor crystals that have not been contaminated/added by other atoms
are called intrinsic semiconductors. In this case, the conduction band of the electron can
only be fulfilled by the previous valence and the electron will leave a hole in the valence
band. The number of electrons in the conduction band is equal to the number of holes in
the valence band.

The intrinsic density ni in the non-degenerated case (eq (9) can be calculated by the
following equation.

...(10)

Due to the energy gap g = c - F. Based on equations (9) and (10) the Fermi energy for
an intrinsic semiconductor can be calculated using the following equation.

19
 This states that T0, the Fermi energy lies right in the middle of the energy gap. Or
in other words onThe Fermi energy intrinsic semiconductor is located exactly in the
middle of the two energy bands because it has the same number of electrons as the
number of holes.In most semiconductors at room temperature, the energy gap g greater
than kBT (Si ; 1.12 eV, kBT = 0.0259 eV at room temperature). This shows the
assumption of non-degeneration with results that match the assumptions.

 Doping
The intrinsic density is too small to produce adequate conductivity (Si: ni = 6.93 x
109 cm-3). However, to produce a higher density can be done by transferring some
electrons into the semiconductor crystal, where the atom has free electrons in the
conduction band or free holes in the valence band. This event is known as doping.
These impurities contribute to the density of carriers called donors for atoms that donate
electrons to the conduction band and acceptors for atoms that donate holes in the
valence band.

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 Figure 5. Illustration of energy gap g and its relationship with c, v, F.

The semiconductor that is doped/accepts a donor is called an N-type semiconductor, and

a semiconductor that accepts an acceptor is called a P-type semiconductor. valence, then
each Arsenic atom will donate 1 valence electron to Germanium. These free electrons
have weak bonds with Arsenic atoms, the binding energy is 0.013 eV and the thermal
excitation provides sufficient energy to excite the free electrons through the energy gap
to the conduction band. Example,d and ais the energy level of the electron donor and
hole acceptor. untilc - d and a - vsmaller than kBT. This means that the addition of
particles contributes to the electron density and hole density at room temperature.

Figure 6. Illustration of donor and acceptor energy levels (d,

a)

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 CHAPTER IV
CLOSING

4.1 Conclusion

Based on the description that has been described previously, the following
conclusions are obtained.
1. Semiconductor is a material that has characteristics between conductors and
insulators. Semiconductors are very dependent on temperature. At certain
temperatures semiconductors can conduct electricity or act as conductors, but their
conductivity or conductivity is lower than that of conductors. At very low
temperatures, the semiconductor material will have an insulator-like character.
The addition of the amount of impurities in the semiconductor material can also
increase its electrical conductivity.
2. The application of the Fermi-Dirac statistical distribution function to
semiconductors is found in the filling of the energy band. The Fermi energy in a
semiconductor is a "center of gravity" of the energy of electrons and holes, or it
can also be said as the average energy level of electrons and holes. Where the
energy level in the semiconductor material will follow the following Fermi-Dirac
distribution function.

4.2 Suggestions

We are aware that in the preparation of this Idea Engineering, it is still very far
from perfection, therefore, I hope for suggestions and guidance from the lecturer as the
supervisor for the perfection of the next author's work.

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Anonymous. 2011. Energy Gaps. Available at http://hyperphysics.phy-

astr.gsu.edu/hbase/hframe.html Accessed March 15, 2011.

Anonymous. 2011. Fermi-Dirac Distribution. Available at http://hyperphysics.phy-

astr.gsu.edu/hbase/hframe.html Accessed March 15, 2011.

Anonymous. 2011. Intrinsic Semiconductor. Available at http://hyperphysics.phy-

astr.gsu.edu/hbase/hframe.html Accessed March 15, 2011.

Jungël, Ansgar. 2008. Mathematical Modeling of Semiconductor Devices. Found

inhttp://www.asc.tuwien.ac.at/~juengel/scripts/semicond.pdf Retrieved 15 May
2011.

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Munazir. 2004. Semiconductors. Found
inhttp://azkamiru.files.wordpress.com/2010/01/fis-semiconductor.pdf Retrieved
12 June 2011.

Oklilas, Ahmad Fali. 2007. Basic Electronics Teaching Materials. Available at

http://www.scribd.com/document_downloads/direct/4057827?
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Sudirham, S. & Utari, N. 2010. Knowing Material Properties (1). Found

onhttp://eecafe.files.wordpress.com/2011/03/menkenal- properties-material-
1.pdf Retrieved 15 May 2011.

Wikipedia. 2011. Semiconductors. Found inhttp://en.wikipedia.org

/wiki/Semiconductor Retrieved 15 May 2011.
Yes sa. P. 2001. Textbook: Introduction to the Physics of Solids: unpublished.

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