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Contents What's New!t HowTo Use The Guide ‘Alphabetical index Product Index Replacement Procedures. Transistors Br PolarTypes. Complementary Pairs Matched Complementary Pairs Darington Power Transistors Field Effect Transistors FET) Power MOSFET. Logie MOSFET. cat Surface Mount Application Selector Guide Silicon Power Selector Guide Silicon Small Signal Selector Guide Germanium B-Polat Selector Guide FF Selector Guide TVTuner Selector Guide Transistor Outlines, High Voltage Devices: HV Muttpiers HV RectiferibWvider HV Dividers’ Focus Assemblies HV Rectifiers (Silicon Industrial Microwave Oven HV Rectifiers (Selenium), Hy Rectifiers (Silicon) Diodes and Rectifiers General Purpose. Controlled Avalanche Diode PIN Diodes. Diode and fect Gutines Voltage Regulator for Electronic Tuner Varistors (Temperature Compensating Diodes) Varistors (Voltage Compensating Diodes) Varactors (Variable Capacitance Diodes) Matched Varistors [Set of Four) Varistors (Radio Tuning Diodes) Zener Diodes. Bridge Rectitiors Industral Rectifiers Fast Recovery. ‘Schottky Barrier industrial Rectifier Outines Silicon Controlled Rectifiers (SCR). Phase Control High Speed (Switching) Gate Turn-Of (TY Applications) TV Power Supply (Switen) Integrated thyristors Rectiers (ITA) (ora Deflection! SCR Outlines TRIAC - Logic level TRIAC - High Commutation TRIAC Outlines 139 SeggeS53seeee3 1-108 108 1408 1105 1-108 1-106 1906 1307 108 1.108 1-109 1110 1110 10 1H 0 am 11a 1.115 m7 ne 119 1121 1421 4125 1138 1126 1-126 1.126 1-129 1-130 4131 1132 1132 1132 ‘Special Purpose Devices Silicon Unijunction Transistors (Ut) Silicon Bilateral Switch (SBS) Silicon Controlled Switch (SCS) Bilateral Tigger Diodes (DIACs}. Bid tors (SVOAC) Overvoltage Transient Suppressors ‘Metal Oxide Varistors, Surge Clamping Diodes Resettable Fuses Surge Arrestors (Gas Filled) Quartz Crystals, Opto-Electronie Devices ‘Numeric LED Displays. Bar Graph LED Displays MuttiLamp LED Arrays Discrate LED Indicators LED Cartridge incieator Infrared Emitting Diodes Phototransistor Detectors Infrared Detector Diodes Opto-Coupled interrupter Moduies Optaisolators Ic Protectors ‘Thermal Cut-Offs (COs) Industrial Power Modules ‘Symbols, Terms and Definitions Linear Integrated Cirouits IC Selector Guide Voltage Regulator Se ICand Module Circuits IC and Module Outlines Miscellaneous integrated Circuits Digital Integrated Circuits, CMOS Selector Guide CMOS (Complementary Metal Oxide Semiconductor) TL (Diode Transistor Logie) HLL (High Level Logic : HTL (HighThreshold Logic| IL (Resistor Transistor Logic) TIL Selector Guide TTL (ransistor-Transisior Logic) Includes 740, HC, HCT, and 80:CMOS Serie) Interface, Display Driver ICs Microprocessor and Memory Circuits. Digital, Microprocessor and Memory IC Outlines Accessories (Insulators, Hardware, Heat Sinks, Sockets) Cross Reference Special Notes (Cross Reference Section} tor Guide 1134 1134 134 1138 1135 1.135 4-136 1-138 437 1443 146 1187 4-143 1-148 1-151 1182 1183 1186 1157 1158 1.159 1-160 1161 1-140 1142 1168 168 1 4.170 1170 aad 4182 1261 1259 1281 1281 1283 1295 1-298 1301 1302 1308 1-308 4330 1.335 1340 1383 a4 22 What’s New ! Following is a summary of What's New in Master Guide ECG212U New Products — Power MOSFETs * 100 Volts to 900 Volts +10 Amps to 70 Amps TRIACs * General * High Commutation * Logic Level * Sensitive Gate Resettable Fuses * To 60 Volts 40 Amps Dual Schottky Barrier Rectifiers 60 Amps Diodes & Rectifiers * General Purpose Replacement Procedures B ic a nOnEn cy CROSS REFERENCE a Industry's Largest Semiconductor and Relay Cross Reference on Diskettes SSS ECG now offers it's INSTANT CROSS" for Windows®, with both the Semiconductors and Relays, in one program. Two Cross References in one. Now approximately 306,000 industry part numbers crossed in one data base. Totally IBM® compatible. How to Use the ECG Master Replacement Guide Locating A Replacement Der 1, Consult the Cross Reference section. This section begins on page 2-1 and is arranged as follows: Parts Starting with a Number are Listed Before Those Starting with a Letter. A, Parts starting with a number are listed in order of the numbers occurring before a dash or letter. Examples: ‘900000FR2 25N68 42020-03173 4202003173 B. Parts with a dash ater a series of numbers are listed ‘ahead of parts with a letter after the same series of ‘numbers. Example: 48.155001 488155001 C. Parts starting with a leter are listed in alphabetical ‘order of the letters occurring before a dash or num: ber. Example: MPS-A10 MPSA20 D. Part numbers froquontiy misread aro: e 1. Zero for letter O and vice versa 2. One for letter | or Lor vice versa, 3, The Greek letter mu (y) may be found under either the letter M or U. Check both. 2. Verity the replacement. Your application may ditfer from the norm. It would be to your advantage to verity 1-4 the replacement part for your particular application. Refer to the Product Index starting on page 1-7. This will direct you to the page number in the Master Guide where the technical data will be found. You may then verity physical dimensions and electrical characteristics. 3. Ifa cross reference replacement is not found. In the ‘event that the cross reference section does net show a replacement, you should first consider the possibility (of ano suffix or different suffix replacement (ie, 2SC261E is not found in the cross reference section. However, 25C281 is found and ie replaced by £CG123A). The next step is to refer to the Product Index and locate the data page for ECG123A, then compare parameters and physical data, as shown, with your requirements, If this procedure does not yield a useable replacement, oF no similar types appear in the cross reference see tion, you may then use one of the following proce: dures for locating a replacement. ‘A. When published information is available, compare ‘of the device to be replaced with the listed parameters of comparable ECG devices, 8B. When published information is not available, follow the procedure for eelecting devices for unlisted types found on pages 1-34 to 1-35. 4. Dimensions for outline figures. All dimensions are ical In inches with millimeter equivalent in parenthe: ve Alphabetical Index Description ni ‘Ato 0 Convene 1.259 ‘Rosessores and Hardware 138 AG Switch SCH 1166 ‘Adopter Tareod 13a ‘ahesive Sestant 13a ‘Anslog to Digital Convertors S280 Bar Graph Displays, : 1151 Bicinertonal rode yiioy = N38 Exlateral Tagger Dioder (DIAC). nnn BiPolor Tranestors, 18 Bi-Polar Transistor Seiscior Guide 438 Bridge, Hybrid “ORE Bridge Recters 8 Bridge, 2 Phase SANane? Clips Transistor Hold Down... 7 mer MOS Digital Incaprated Cress = Berd Golor Osclator Cryst oa Gommatoung Scie (See Phase Central. oa Gomplementary Transistors, ee} Crystals a 17 Dartington 61 ‘arrays aH ‘Aug Ample Hodules (See Linear 1 Saactor E470 Cow Powers : 83 Power Tansisiais (Amps and Over wma 181 pac’ cents : 1135 Digital Aisi Cio 260 Sigal erated Cee = 1383 MOS: ag om : 1385 ALL 286 i a 301 a : 302 iis 308 lode Wide ies Diodes ae 1108 ‘Conti Avalanche 3 mae General Purpose. 105 Inirored Detecting, a 158 Infrared Emiting, we? LEB. Coonan Ugh iting 183 Pi = 108 Surface Noun Devise Vio Seige eamping. it co Temperature Carpensating (7 : Voractorevarable Capacitance. “ne Variable Capactance ne 0 Yarstos, Temperature Compensating 1H Jaistors, Voltage Compensating . Voltage Compensating. 0 Zener ean Diode and Roce Guiines 7 08 Discroie CED. 188 Displays, ar Graph. a5 Level Mtr 82 Mattipie camp (U6) se Numer: 188 Display Orveriniograad Circe ceed Boubior Hybrid 68 Doubler Raetir Vise Doubler Sc Vee Dit Bigtatiaiograiad Gece 1288 Electronic Organ Integrated Circuits 1-260 Electronic Wugers “Transistor Selector Chart. 190, Voltage Regulator for Eleirani funer ‘09 EPROM (Erasable, Programmable, Read Oni Wemaryh. 1298 Erasable, Programmatie, Road ONY Memory IEPROM)...1-396 Fast Recovery Rectifiers 4417 Fer tae ‘JeET Ne Chisel 184 Moseet Power 188 Sercning| 18 Field ettectTaasistors FET) oo Fail Wave Rector a3 Fuses, Reset Tas Gate Tun OM SCR 135 General Perpore Diodes 108 General Purpose Rectiers 108 Sermantunt 189. ‘Diodes and ectifers 08 ‘Transistor, Selector Guid 1a Description Hardware and Accessories "Hoot Sinkayncnes Hest Sink Compound! : iNeliage Splice for Gf insulator Kis ‘SealanvAchesive, Non corrosive. Sockets. Heat sine. nn Heat Sink Gamacund = High Speed st High Vottage Divi High Vottage Mul High Voltage Rectiers High Vottage Rectifier Ouline - - ah voiae Si IS Oigital intagrated ics : Puck 2 Puck ‘clamp Assembly. . Rector sca ci Hold Dawa dips. ansliorg Hit Digtel mtograted Creu tld Bdge Hybrid Double Hybrid RE Ampiliors sate Ic Protectors 7 ican ae Infrared Detecting Giode Infrared Emiting Diode “ Insulator Kits = Integrated Circuit = Sita = Electronic Groa ett rscarc Unearse : Linear Selector Guide Memories aa Microprocessors Miscelianeous, Sockets. tuograted Tatra Interface Integrated Circus SFE Lamps i spam nasi EBBeseh tan ina ee eas ia Memories... Modutes (Se tinea i Module, Di Module; Thyisior MOS Handling Precaitions mosrer Mouniog ipa sir lukple Lamp Displays ‘Multipliers, Won ao Transistors ———— Phase Control SCRe. Photatransstor Dtestore Photo Interupter. SEE F * 133 A ‘ x $R28: SSsResEsEg wade gestges Be Baases © Alphabetical Index (cont'd) Deserition ane Light Assembly. PIN Diodes. Power MOStEt. = Produ Ingex Sit etl z ethene A nm semen sine eee a ee ai : series tiie = glare : — : eg a neplaceneni iri — ena : — FB ca : ‘8CR AC Switch Seleeto: Guides ‘cMios: German incor 5 - Be Transistor zs Sticon Power Transistor Surface Mount Transistor : mt Tila aii age Regulator 7 Special Notes SCoxot Splice, High Valioge : Stitace Mount Dovcas ‘lodes oe Transiior, ica ran Sugg Arete Gael = (Bidirectional Diode Titi TeDlodes. erases ‘YEO (eoe Thermal CULO! ea ‘Three Phase Bridge aaaner 16 besetton ue ue He Le CS nt 8 8 oo —e vetoes Seine ie Be isa B ESS ais a Sean lt a ig isoesere i Fs is 2 PSST cca ae elle ue : oe Sat Sng eae ut ase Se vated i Sli i ies oa i ie Hi caer Sk et Hise Si Se ini oti a ste ea a Vienne Sh 1B vost uy Yasin 8 we sae Hi done ate Se S 2a SES fh Product Index feo Pie. ce STE SE cout © TENE eA tame india om ETB | “a Tn von 2 MURR eR AES. | ie ae te my ve 2 EH on | 3 Fa tet aay ont —_— a areeroneoreric- crue ie | | — tat oe eee Wet vom OS ppececores sc US ee | SE tet He Sema btc eG Heeracie cei | Fg a eee INGE = 264 _O-Micromave Mixer Diode - Cant Type Y-Band « Disc. 32 138_Ti8_TPNP'S.AF Amp (Compl to ECG3Y) Rie [fa Suceava te | Se Ta slg no coop OTST Mar 1S His Geese eva ee sav ommrooe ee ae Ee 12 TE! UREA tenet crete ce, as a foci a 2 Ee, Pee ere we i fri vere tee vas BTS hs pe SSA EAT ET a as 118 S111 Vanator Metal Oxge, 38 V AMS a 1-40. T2041 TRIN: S:Boal Holm Lo Noise, Oitorentil Amp, Re UB EN Ea BYE co eimereas ta te eee vat tar SCS oR ee Be HS Es ine Bias tao ea SB hae etre nr V0 1-196 813-1 Varistor, Metal Oxide, 95 {Common Base) - : a ESE Bi Sop ate “ EERE RES earn ono no i ar wernt $ is ak og Ee Gu eee 3 Po ne RH 3 En iehenpcrstinierns, teu : ERA iat a ae See oe # £33 of ed ag a, Conte one sh EGA % =e wom 'SH8 Gain, Non Dasingon Amp Sw, Pass Reg Varstog Metal ie: 2 VRS 5___140_Ta_ENPN. Si Pr Aus Gutpet loamalo EC) orton Mota Oe, 50 RS 521-40 Tat-) PNP 548 Pwr Audio Ouout Compl to ECS] &% N40 THE’ ENP S:Pwr g, AP PO Gn Purp Comat. cup 140 tag FRPN seated Pir e 40 125 TNR S:Por mp, AF PO, Gan Puro (Comp! t2 Econ “ oar HS 2H BERS ARS as SEV ota tas ERS RERL opto cr r3cn Tr135 S11-2 Varistor, Metal Oxide, 420 V ANS ee EE aera, He geveneden ses SURE aaa Fig Scone RTT meus montomwer | ig sas ua Si eaeeeee eA ty vorigiaiemrncigemess———| § 1 i Rese Eason ese tog et Bese tind a So i Mugunmnemoren seas gb: ae ae as TeV Sia Uy ae SO "S20°T Varistor, Metal Oxide, 420 V RMS. ee eee ee St Ree a 2 28 Seisemee ee THe | TNEN. SIUMFIH Amp, 8 Gk me ‘2_ENPN, S:Gen Fore Amp Sr” Die THe TPNP Situ Gain Hi Curent 74602 _1.908_D6_IC-CMOS Quad 2:nput NOR Gate i: eee are eS EAI ue {E03 TPN, SUH Arp. hiner Osc UMF Osc- Dis Heid 1306 Bs IE-CMOS Trine Sinput NAND Gate ve potter i HBS ERE. suo an BER oCtminseonn | tee fe ERR Rede peesgart es i BEARER. 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Ovevolgn Transl Supresty. 60 Uae Hes D'Surge lomging,Overvotage Trersiant B-Berecioa Suge Camping, Ovevor “rant Suppearen 18 URC Bue Suge Compig Ovevogs Tavsion Qxavotoo imeeeeameet Suppressor a0 VR Sei cepts er BSkgr comping Serlge Posen Seiea ioe rence Sag rg, Sarat SEE Sot camo, vena ice ech rns Foci toonaaae ee Suppressor ehvR ree Sica coer SE care genome Tension Sunprenoor STS YRC AMS ‘ansion Suppressor 10 VAC AMS BRR crore awit Stopes 420A AMS Suposson 701 vR Siig dnt Soa an Saari Seve amo Senor 1m S14 BBBincona Surge Camping, Orne ‘amr sie DSurge Coping: Orrvotepe Masta THES Diincions Suge Camping OvwoTnoe 198 ¥139 “a Gs su BiBeiecionn Surge Camping, Overvotaos SBeacions! Sure Camgng, Qrrotaoe ‘rast Suppress 785 We iS, big clamging: Srorotgy Tn ‘Tronsient Suppressor, 905 VAC ANS 2 Seen Garin revotane anes eres seta od see Scere oxanotoe B.Sviop clamping. Grarvotiago Tonslent Suppressor teh ‘asin Sapyestor S008 AE RS Surge Ciaming, Gvervotage Tansion. BBBrecnond Surge Ci var ‘anal Supprnasor, 190.8 VAC RMS ng, ern an Transient Suppressor. 1813 YAC RMS * feo hae Product Index (cont'd) for MEI oes foe faa THE AE onsen Baa va x9 goavewapey iow. sean Catee Semeceans sae tat siuac = 210 BUSTS WIS news cate Comedie o 4989, 16139 S14 Bidirectional Surge Clamping. Overvoliage Sa-e. vc Sone are as STAC com von sie SSipeloalg Sootgs fot Ko “GT TAT SSOBirotonal Surge Camping, OvevoTage Gonmeced ostud 9 = eee ae stone = 2 ER cee ct om sn sie SSipe Sate Satan be Settuoe tao aA vam su SESE re carges, vmotane = ‘a Sol aS Ra BSbac von ze zoazayzmoy. ows Teme caee “ai TFs Drge Gogg Orrtgs Tan nec Serene ion aioe Somes Se soe” Sequin zm 29 qu a0 v0W.08 Trance ane vse re SRigtesetlne rarcape Hsien =ank ay Ti 3 en Se SE ONT Sea 111 m0 zoagmzm0y. sow. Towa cata com vs oe SUlgratg evap nen see 110 ze SSUES 184 Sees th Sos Hn ape ec om pny tet some vin su BEERS cunng enotoge She ia He Ascardbe gormy ies Sa So et Rae sm fois Ei nevanah women aaa So ONG Bh eee pao = Hg 103 BS aS oiaee Beards sk vu Bt Bienvetusmere ate 4. [Sr He ie oe mae eae En Sy ENp Bt AScaigee momen = i Bf ag aiaee Soemes Bea 1101 24 2024 wu 08.00 lems tl SHEL ASLBIRS oom 8A Soo TIE Bt RS: Bape BRIA Blow ron ao psu sev enw oman ms 8 s Bun! in 2 Baesgyseem TS HA Ast arabe gem eA SM IN Bs BEYER ES one EM ESE RESIS m2, Sit —in-feapseasW pe meses aa pec Bun iit Ba Basvesvse meses ame ne pee Bak Gn Bt RSV Rome ans Slaw 29 snes v7 90 m4 ramen Pa Saya sos as oe Biba 1a za goss sov.a50.% romance ora) Shabu tin Eh Betwmeyegw gs rane 2 ee Sar r-a abv a9 Te mons ih os Hie tn a BNVOR oe Wee ane 1S HERS SRA Lin Bk Buvesvise team ang BH BD Mes SHSM TaN Zao 2542300 mw. 9h Wlronce PEO) Ma HBS bra Shv Un? Buyaneer Bet bre sob ‘wa 4-113 255 Si, Bridge, 600 PRY, 100 A Bia vin me miawvamey ony on came ar) ie Bt Settee ores, Bah, UN mh Buwsaea eras waa ome ‘ide ip Seuivaeec.cosvomtnss® sre Cita 20301 30 9 Tolan ag) ——— Tie Be SAN Sck eteanmnea Se cin Eh BE moses TB BS SANS a EA He Bb Satter poms = Se ee eR oe Tie htt arnt Toe Be Scala geeee Som oat SB BS Een oae ames Fix “va ae ‘aie amity nbn nanan rl I BS SERS pei evr 4 om S107T2__1-111_Z3_20-123V, 0.5 W, 2% Tolerance. é a See Soi Haar Sereno om owas Blan 1401 2 spas muzeoy.sw.sn tomer on a et Fe Bienen nme Hee ia >is _mesvomaeseos ———| Sat Ba vom 2e zeasea meow sows idaaen Hy BS senasvmites an oe Eat ge seeamymeaes Bhi, van ae. zeae ue sd Yoni monroe BBL BE setagmesg Soh Eb BAW Be 3 UR GE SAB inte Boa _uan_ 2 spasm amay,.0W.54 ean sie i Zit sohami 104 ean 28 fast x ong tow 8 Toran 5a24 1-126 261 SCR-TV Pwr Supply Regulator, Hi Speed Sw foa0r ow toner Can SEE BL SARC mimi dea eS a, sux = 20 BUSES rae cote =e See - * oe Se bh BS Senden 708 SU BP engi ee 1-25 Product Index (cont'd) net $2 TERE ont og [ht ii, snow tay sai ‘een Pee 2 OB Seeese Soin iS EMimiass eis eeerm on ie, dnamame se Saye eam es a Sone etme 2 e Reins SUN) EREARGS owe Soe Ea aan ao Sg ee saiame os 2 ee eoiee eS ESR? ELE BIR Se ie enema a Se ie eatin es SOLE Ese Son SAMs Si Me ie Sasa ee Bun is kvm me Site i ASME oe BeMEs 2 —Te mere et BE Bower Sa Uh Eh, ERE ms zat Sen va, 40 A SB om eee Sn ES MNES “ge te amin a Bowe Eaves & BEETS 2 Le Beis ee aoa Son eanmts SNE EL EAN 28 esac Soe gees: BNE EESRaihes Sh nS EN de 2 2s sae Pate SRB See eee eee = 22 seme SE Sees SURE ERSMRRS 1-26 eo SE omen ea ms 2 2 Bere @ Ue Bee. oO Beas, 2 2S eames BE Bee, is eee, = 2s ee @ igs mesmit Be FRESE awa URE RES asses sea ea tacoma So at 2 a He Ee Bt Reape ih Sparen = esi #8 Es rh THIAG#00 Vi 18.4 Tunes 32 TRESS A sameats Etim: TRIAC-400 VAM, 2.5 & EA Tear TRIAC-600 VAM, 0.8 & Resear HB i RSE EB ito mocaevar a TRACOM vant 75.4 “TRAE a0 VANE 40 8 a 30 131_248 _THAG200 VAM a0 A 130 2410 Tmiaceo vai 25 8 Bee i ee wus Be Hi Ge” Eeettiec tet amas oe EEE See testes ge eee rte Bae 22nd Ree Bi Passer meets 1B A Paton Testor van it Bs Es re es RY ms aa Zea Fn Siae ns SOUSA Fa ba a hb ad ste big Vist Spare tanec Foo Pav. $A: Asal sad RegraiA Ra RABIN TAB Product Index (cont'd) 200 PAV, 128 200m, Cath Case £20012 & 200m Anode Case one 2 ws 38 oe ue B 283 H 33 sabe ac. asi eee a [S3e5 Bs dees SBHCEEELCEE 233\33333| S333] fe 23 331 38! a a 400 PV 6A Cat Case RA00 RY 8A Anode Ce Room ga Can exc 0 PR 6 Anode Cave 900 PA 99k, umn Cone 200 P28 Anode Case ) F800 PRY BA Cath Case tere seece, pace Lica erm HT ey eee See fa tae heat ig ie tania uae Bee GR utees UG fb Eevee =e oe Shae OUR Dea ice st ie fata stor Soe S18 219 RQDOPRV/TOA, Cath Care. BU ER ERR: Sos 115 218 Rego PAV, Bn PR “Sr ae Sper econ PS ee Bt 111 218 RAD0O PAV. TBA Anode Case BLED RIA hesese Sy fa tommk es Sead 1115 218 Rabo PAV 20. Cath Cone Sh Bh RRR ER aoa nana on OLN a temakcece go i fa games me On lay ata saz 1-115 ‘R-1000 PRV, 20 A: Cath Case Ps i eset ‘eet RSD PRN IFA ode Cae Ea RisonSex tome 3 ie Aaa 83 $2 Pn 18 aoe ase er TSOOPRY TSA Cath Ce 33 BIR PAY ISA ance are Sa F409 Ph 28 Eah Can Pras Fa 3a 13 Pm 38 Annas Fe Sa Moa 28 eu Canfas er Troon 3 Anas Ca Pes FT Se Born ion con Sa Sor s0A Anos = Lee as 5008 1-200 PRY 0-8 Cath Cave = epee Se 209m a A anne Co 0 F209 Pm a9 eu Cae = caiman S989 F800 PRY 40.4, Anode Cave Set 10pm 4 Aah Cun Se F029 Ade Coe Sie 220 Roo Pa A ca ce $e |41e Zo RawencaoA aroue te ee gee ee ee Seet__{ste_Ho_ fuse pao 4 Gob se Sots 1220 eso PV 104 Ane Cc fie tir 0 Ramen sa te: Sah eft acer, Sr HI Bo Rony a Sonne: Ate See Fatty foe tt Bo aw en aoa am, uh ae Fat taney Sies_Tiit_ R400 Pa Ao a Anode Cie an Rae G01 1-117 220, F600 PV. 80 A200 ns, Anode Caso, Fost Recovery i242 Zao Ramen a2 a bowed Se 11s fo" Rese wa tne =acns fa GN) Be fe tir a0 sia 3 Sst /4ie Zo Paw eny eo A heaven Sa His Bo Ramen eA con owe Saas ee ar SoS Ry BA ie cen router Se }MNe Zs Ads Ww cuca eae Sans 2 Rasen 0A coos te Sst TSHE 20 Eton pm 70 nade Ca fee He Be Rapsmmy WA cam ene fees Te Ht Ron Omi TOA anna feet 0 Room oA con a sl" PaO PRY TO Anode case eer He He Roose WA Gane oS eters es__1.N6_ 2A P39. Kos ne on ite Bo fe ie Be we ie a Soe oe) LN 201K Wsehoy Barer OV 10 feet ne AA RScomy Bovey 818A eer THe Bua fst Baar eo 184 eet LHS ANA Rasioy euat SY 19 fete fia" RSchokySurar tac 4s P,25 Aca came ‘is ——FI16 2518” eho Bri 10V PRT Cone fos ie ae con 1318-28 Fe Srey Bri 45 PV. 20 common en 1.118 2410. Boa Seoty Brier VP, 30, commen 1.27 Product Index (cont'd) No T_RS:_peserption ‘iso 1-118 2816 R.Ova Schowhy Bor, 45 PRN30 A, Common G91 1.118 270A Run Schoty Bat, 4 V PRY, 0A, . Extnode a ‘isa 1118-2704 ROL Showy Bary, 6 V PRY 40, Common Esthose 3 6683 —T5TE ia Duel Sci Bae GO PN IA, Common Esthose G98 220. Risch Barr Rac, 5 PAV, 60, Cath Case ioe 118 Zan Reso ss0A cat Cace ioa_1:116_251_Rsoo Pv S50 Anoge Cau zm 7200 PRY S5DA, Cth Care B RaHe see BSR ati HB BBR ieee SB Ren ae et er we ot Sere on ve ERB ui 3 ERIN Ha aterm er HB Eames ‘iz 1-116 239 — R-1600 PRY. 1200 8 2 ee hemes HEB Eee eB aks on $2 ERB E tt ts —Ha- ge Roarar reteset % ye eeaea! i Hye tee eet He 2 ES ae eee Oe 2 ERR eh eee: 52 Bem BAe ‘se 1-28 td ry ine 1138 Bain wai in 2. 2 = 2 a & a # PRIS a A crn ce HRV ts fe Se cement PESe eA ernment ieee ete ee es eee (Sg RV trata ome eames ieeiaesie ds Peewee Rees (Shaan ha oe im ateete igen A eater tere ar Eom eter, 400 PRY 289 A. i, Aad Cose- i Uniuneven: 8 aT Oeode-2 A, 90 ra, 28 V BRIE Die. Tigger Diodes A150 0, 32 (ERIE Tiger Diode} A. 250 m0 V (BRE DBeSoraral Tigger Dio? 20 mi 69V (BRIE Berton Bode Tyrst-SYOAG, #40 VEO, Beacon Dade Tyitor VDAC, 545 VB, seo a ee ca Tae be ESS ne RINT TON) a ten sim tt Bono omte erste 0 cs ase Blaetom! te Myr sHe, m8, I Tae Ea reo TS SSW Emenee nnn ae jutro SERA tse became ne ee, ee cet serrtceree tet Eas 68 eh yb a i ye oy lear temo cre [sel be) ieee nereeeeas ee ee aera eerie jee i aaa eo tat be, BREE ome cena Max Access Time = nis 2 si ee ce ae ot kre seceenn Seat ae Bb comer onmmae 5 res eas ere SSE cer ereerecess eee cere com san oe ERnennn sare aay a te ES eS ey — co san oe Beene taoeanceteeane Bosinrtace river vith 2a anne Enable 7000_1266_Lr11_ICAFHO.SW. with Mung. Voces Rea Foe2 248 Land IC Swich Mods Pw Spy Cotter BS ie ect eee ow F008 _1248_L1it_1€-bus! Stop Motor Orv 1d» 300 ma SS ER areca aromene tn 130 ne ita reamorDaos Jon Yaar Us tearho, avi vec tow hina i HG Bb Emveemommmmrster Ei UE ib Eitri eaters ran fre ta Hae ruven Be tag Hah Eee Sit am a cmsnin Ei GE Gt ERigimitoe 3 eee ees = GE Seen S fe Ree RS 1S He waco ny 031 Mod-AF PO, 100 W-RL= 8 i Vec~ a51'V BS ie GEER Vata 034 KB7E_Mod:VCR Postive BG. VE Sa Tas ta eer Reg Ro SS ee 3 pages oer i joa {do" IE-Bidrectionsi Motor Diver SBE Bee... 708s, {aia IG Horizontal Processor iow 24 IEAV Smal Signal Sub-System Bo HB AEE eceel ces BoB beeen es Ss Ese We nis Product Index (cont'd) = me HER aot a ia te CoE Te ee ree Se ee RU wee Se eee RR ir FER rr tbe cpm ee Tes ene tren Sete Rome So He vere meee See eee ate noe iE EP Ee ee a oe La RS aN eo eB eee earners oe FOr _1262_L89A 16 Bivctonsl Motor Oren. 10s 2A. ae ae eae Be 12s Sak Gncreemesete iS Be een 3 SS es Se a3 1s OS ener SSS oa se oe eer ms ae tor ee ear Gb ue cieetee tet ge rl Se te Cee eT SS Meera 7001 1254 UA2_1CDunt Bicrechona Mar Bri oe Bee =e eee Se ie ceeleepee = BS OR i Reena =e cera S Se cooker eee te eee ieee i 1B ER Ria eset etc ane l= 8 0 - Dise a 2S ge eee = fp Samoa ras tas un Botta cen nam anise versity ee Pe fa tee a eee eee 7 re eee ee 7131256 L751 Dual BTL AF FO, VaW, Vees 122, RL= 40 ae Ee EER eS ath ie 13 HA aaa 12g 1s pesca meee ee eA tee Fa net a ca TT ra vas iran Smear eas one 3 ey SSS = BS 3S He Beeibeee he sheers: Po BS Beier toe com Suto Bie a= ide _— aes SS ENS, cence erat tet ea Te tears ee a a eircom rsa on ETHER os pn concer rot ta ERSTE oom 7s 1S Serco eae mo a TORT Se Bi eeecuns HTB SS ETERS SREIANSSS, wn ope conan a 2S Jat6 1308 DS IC-TTL Hex Inver BuftrDrver with Open Collector Rance ae pot Nan ES diet ‘ei eee @ Sf Exeoeue 2 oe oes ae 3S 2b Eee ersereree 3a St ET eae eT Saar 310 Bs IE-TTL fp Singur NR po eto ae ae eo iB og 6 Eee ess 1S -Bb a st nr a TO 7437 1-310 6 _IE“TTL Quad 24nput NANO Butfor oa Fa RD St GSS ert ee roa Indicator Tubes a Fal Ene OC TAT RSTS id ae anenae are eee WS lS ER iSsttoaencee on 2S become ey a 26 Soe Bat eon ee a LR Emenee oom tat tig oe ik eee gm zergneonerom 2 of oe ee Was VSR DS IGT Dual dAk MUS Pipl wih Cle Ht ERB ERUSRI SMe etipaeonciw 7482, 3313 06 KCTTL2-it Binary Full Adder - ise ee tetera 7491 1314 DG IC-TTL@-Bit Shift Rogistor 7 SS, US Be tomes peptone 2 (RS STLSReaR so IRE SERS toeteern maria 3063, Set Tawra cree fore ta? Cr ees 13S Ele RBS cc 2mie te cea nen Re aa 2. eee fees Seletorhtatipiner its Sate Outs 1-29 1 sco Page Fa Product Index (cont'd) FEOF: aetiton ee) 1290 8 ict Ou Monomer ae Poon kore re : it it tome STE RE omeipton SS HE SS EME Sen teen wm Mee eon ___— oe Be ue F a or nue 3s & hehe 33 & = ose BSRtneStiowiouuronwinssue — | SBE 8 iEhuteerahetoge hae hep Bac San 53 BS EMU 8eSwrtncdeSecsrkamp Bisa Span rd oui TB bb ESR echo auiesiouinenimanin | sam om oF HR Bn nt Octo On On amr 018 Sip teu Sanseraisinae vin | aE —TIOO- EM Rina TER OORT RS T3aba TE San ek Ges i ams 1400 08 MEL BED Socen Segment coder Diver O = ‘Themal Cutoff, 228 °C - Disc. 7 inet 7 Collector — See va G mneu ae 001300 06 EAT Eu nyt AND with apodeme 13S Sly 2SScen Sys Sonor ang av svar Sia ie HB By” (Esgunansaceuna dn tT BE oa Sp i BD 7 OF SiaSooieaigieat at Never Oapoe _| Sa 13 Oy Rite Dadnraonnn ena "bee Sig ad te Sol 13 US naretine SekeiGuplecrain meses Supus-on | sueh 1360 LI fee Sel Onode for oR Di OR Scrat aa Oh Cae icra wt alot Componente Ovo ne Bae no ie oo ROEM Sasi = 5 — Sit a Revogooreat none ts —T38-O10 CDS Pagans PipioanaTa Someone Tie 138 be) gu GueTUmeetine Sor iatner-poe | 02 1220 09 tS Da Rtignablemaneraie Monoble So 132 BS Ba See sue iie set pease Socata fre 32 is emia pute inn dae on _ Mga Sa rn ine Rene $5 son BF EDEMA ES Pin Se Tew Ean tinpt NAN Ga Ps RO oe a Oe cents 8 Elm Petc heau ge yy be By ESE Seebeccguagecom & Eur Auacancpansoa te Be 133 8 Bia sear ease 2 EO RN SRAASA olt 3281328 06_ ICO Bua 8 Shi git, BE Est baal Pulve Sener Tear "=e Te Opa So Sogn nena Tr 8 eum ova mpi oe Gcretincaeas 2D" ue Se Esc wat mtr Spar Stator tam 1220 of Bl SeSegnen Scodertsvartnch wih 85. nt Sasi naco as Sete enroeetne tee oe ‘Tig Fap-Oie eam 00 Spader oan tr 8 | Pratl Ba nmr a — Ta oe igo aa Ba Se Sn oud sinha Nato eng kona) “Bae ES 1 GBR Sees Rgaerae Sa ope Biot Sua simea nan Gos konm nae “bas Si TSE GE EBS Suc soem a aac 35 TET ur Ag a ab Tn, Sloman ESB Satie a koa Ra oe xs aan_ow_ EESTI ine wn 2S Oot -De Be seBr dS tea as te eect - Bs Sat — 13H TED Symone ary oom & Bu at Gn oer Bs st T3a8 bs ebm! 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She 1S BF ALES iopoudtrprap kate = 85 (Core ct nis "owe a —— Eg a RT ToS "=e egies eee 8522 1298 08 ICL Expandable Dual S:ngut NAND Gate Active 12S BE (Core erinener" buen” 20221-29808 ILL Expandable Quad 2nout NAND Gate Open -H86_Dé_{COTL Hes Invaner Die ihe torer get gitar siamas ora VE 82 cont Ol titna Emons KAN bute ae e225 1.298 0a IC-HLL Quad 223.44nput NANO Gate Active Pullup 133t_Be_ tort ausd's npr NAND Gate Be SB EAR Si sation wat ors Tar Be eat coaereroe ‘oT entr giana td oN WARTS Tm Bl eon acim mena eta cn Soar en tate See eee ETE woomon-om 9335, 1.299 08 (CHUL Strobed Hex NAND Gate Passive Pultup -Dise, | °% oo . Product Index (cont'd) fins _ Fok pats Ae ere ee Se_Na. He. _ Deveson aD 153. Za) TRAC00 Vint 4x Loge Level ‘691287 06 ICON Tage Tomi NANO Gate on) 1432 241 TRAC 60 VAN 4k. Loge Level Soe 3a Oe lea CLo Mw oul Ktip op 13224) TRAC VANE BA Loge Level feet aa Br Sate per Ou ore, 1ia9_3a1_Thuae-co Van a Loe Level S509 1ata Be ERTL Medium Pw Hex iene 1190” 215 TRCS00 URN eA {3005 150_tiee_ Ie Preto 04 A 1330 Zr TRAC VANE toa ‘io 140 L168 1c Petco 8 A 1530.27 TRAC 60 VANE toa Woo 10 Lies te eect, $800 275 TRAC E00 VANE BAH Commutation {sone 1140 N68 Ic Proto, & _1130_2f_TRIAG 800 VAN, S&H Commataton Ware 140_Lvek te Protect, 364 V0 2a ‘F1a0” Urea Te Petcare 190 dat Th) HER Ie Protea 88 A 130 2 10 LIGA Ie Prenector 88 A ¥0_275 140 GA Ie Protector 4 1:it8_ Sat" Surge Sereda Gas Fits, 75 VOC 799 ZH —TRIAC op VAR. 254 Commu 300 2k TRAC S00 VAKL 268 HL Cammucaon or 2 dy Rese eA eee neo pst ty 8 EARS RS rae seas Eines Hig i Eee ssa aaa Ft a Se eer mae ea tae 00 2H Eg manna Sor pee oe aa ae eS er Ta mi Rmserm gy te 34 Ebi newreenzemeomeniapae HE! Reein gy io 8G Eneetecaenecae Ba Gi Rasteecsy 23 2 Enea 114 BEL Polymer Fuse 60 Files Cold Cathode inciesor Tubes Drecty te Ot toate neg say oo SHS ameter ma id Gl eee So HES Ee i sims soa BP td aa a aaa Ae We oh er enemaeameemony a airy i i Plymeric Fun 30 74185 V317 D8” IC-TTL Dual 2Line-o-¢ Line DacoderDamnutipener a Saeray ba ieacer 3 Rectal ie ion os, ERIS cease = tert ere aH Secrest = ae ie He Seeeee Eneaei ene Stepan Hera eset ay nia, sem crt Eoeamemeeron peechein cece sa sae co Soa NT 33 BS eSecce. CE Soi 2 & EMER ECan. | Rie & EM mememeen emma ee seo at eet eeremeer oars Se 2S ERENT nme | Re ie Enenomermese fo Ear ewc torr oe ee eee ono Tare 1316 08. 1CTTL Pare tod 88 Su Register 13 Hh 18 GEE TChae ote IeMOS Hoe B Fson TTS DB TE Gnd pe apap wa TEMOS Oued 0 Fp Pop rae 1318 06 FETT Decade Counter (Can be Conscted in BCD, IEMas Lakeahend Cary Generator 26,0 Sigua Mod JENOS {Bt UnBewe Sfackronon Decade Counter | 74177 121006 IE TiL'Ct ina Counter (Can be Connected 9 +2 ICTTE €Bi hit egiatar wi Sevan Paral Sata Ey One Raa) ad's BO Le i ICTIL Ea Gsdleven Paty Goneatafehecier ICTIL ArthmatcLoge UntFancton Generator IETIE Coo ahead Car Ganoatr IETTLACD Sytvonaus UpDown Coanar wih TRING 200 vRNe 1S A BABU EE ieee ee aenemenger wesieie ee memes Beale te ee ocean SEES 2 ESE ee aeart oe eee sar SS CaO Com ‘Sears 1131 250 TRIAC-400 VANE 40 A. Isolated Stud 74195 1.320 0B IC TTL 4-Ba Parole! Accoss Shit Register BB Bese sctmins eer cea eee, alk OB Reems pas tee eee eeeeceners Son Lint aaa macom Yaw oa bone io ‘IGan Provide +2 snd “8 Counter) Ose Hl iS eesims rom sam om ERPER RATE ASRT oa ue Sigh emer jies_van om Dero fo memaet oe eS aoe a rar aay Wace cee Seer Eth sree Hl ge Wweeees ame IRE Entrees nares ., TSt Bis” TRIAESOO VAL eA Santive Gam yeas vez os WETHCBochde Comter 131 Product Index (cont'd) A BE_vemristion 1 ond ne Embe 1-92 1323 0B FEW Hexleting 3 State Bue Diver wth T3258 ICTL Hox Nowinvaring 7Stte Bus Ove wa van BOE ttn Oar on ca Vite Be cade Counter ae eee a ae 3 = 1398 13 ouintn So eRtreet RE, Eea nace ger ESS RRR EBs cn Srp Doce WO eee Leo Dg rier wih MOS Compatible Inputs ECG® Semiconductors - Replacement Procedures Universal Replacements 1. ECG Semiconductors can be used with confidence because they are specially selected prime parts whose specifications ‘generally exceed those ofthe original part or application. A ‘maximum number of replacement requirements can be ‘satisfied with a minimum inventory of ECG Semiconductor devices. For example: ECG125 diode can be used to replace ‘more than 625 JEDEC (1N) types (1N867, 1N40O1, 14003, ‘1N4011, etc. and ECG123A transistor can be used to replace more than 200 (2N) types (2N708, 2N708A, 2N2096A, 2N311S, etc) plus thousands of other standard industry transistor types. 2. The frequency of equipment repair can be reduced by upgrad- ing with ECG Semiconductors. For example, fa 100 volt, 15 ‘amp rectifiers frequently replaced in an important control nit, replace it with a higher voltage andlor higher current part, as explained in the rectifier replacement section orf the device is overheating, additional heat sinking may be required, 3. ECG Replacement Semiconductors ae available through an international network of electronic distributors. These distrib tors provide local availabilty of ECG replacement semicon: ductors to help keep equipment downtime at a minimum. Replacement Techniques Forming Pins When replacing te original device with an ECG unt, certain ‘mechanical and electrical requirements must be observe. Compre the ead or terminal arrangement ofthe orginal part wth the ECG replacement f necessary, bend the leads to the broper basing arrangement and insulate them to prevent poss bie shorts For socketed devices, cat the leads onthe replace- tmentto prope length. Check te outine dimensions ofthe ‘eplacementf mounting space isa problem. Replacement in tinned stages can generaly be made with @ minimum of tor 1. To.avoid paling when bending aplastic device pin, aways restrain the pin firmly by holding with 8 per of eedle nosed Dilers or tweezers located atleast V8 inch away tom the even body. nternal connections ofthe pin othe june tions may be disrupted if this procedure fe not observed. 2. pins must be spread apar, bend the pin only inthe nar ‘ow portion of ts length, again restraining the pin during bending as per Stop 3. Maintain a bend radius of at least 16 inch 4. Do not repeatedly bend pins. Insulate pins, i necessary, to void shor ceuts. 5. Mount the device before soldering to leads. Mounting (See itstration) 1. Use the proper mounting hardware, such as insulating bushings, insulating washers, etc. called for by the specific ‘application 2 To promote efficent heat transfer, insulating washers, when required, should be thin (typically three mils for a mica ‘washer Use a thin, even layer of ECG424 Head Sink com: pound on both sides of the washer. 3, Exercise care thatthe tool used to tighten the transistor retaining nut or bolt does not contact the device body. 4. Unless otherwise specified, do not exceed six inch-pounds torque (an average male can exert about S0-inch pounds torque with a serewdriver) Mechanical Interchangeabiity ‘Avoid exerting pul ofthe device pins while connecting them to their circuit connections. Provide @ means of strain relief these connections tend to place pulling forces on the pins. To extend transistor life in high-power dissipation applica- tions where a large thermal interface is not provided by the original equipment, the use of a heat sink is recommended when space permits. The ECG line includes a variety of transistor heat sinks, insulator kits, and heat sink compound for this purpose. Soldering 1. Solid-state circuity is generally miniaturized and is most ‘often fabricated on a printed circuit board. Any repairs to this type of circuitry require a well-tinned, pencil-ype sol- dering iron. Care must be taken in soldering, both to pre- vent damage to the printed circuit board and to make sure that the solid-state device itself is not overheated. A good ‘quality 60/40 (60% tin, 40% lead) solder helps to make joints ‘quickly with a minimum of heat. When solid-state devices ‘must be removed or installed, some means must be pro- Vides to conduct heat away from their junctions. Long-nose pliers or hemostats may be used as a heatsink. Leakage between the heating element and the soldering iron tip can cause the tip to be above ground potential. This leakage voltage may cause transistor damage if the chassis hhas a return to ground. To be on the safe side when solder- ing or unsoldering solid-state devices (especially non-gate protected MOSFET, itis recommended that a grounded tip soldering iron be used. ‘The same considerations about line leakage also apply to the use of oscilloscopes and signal generators. Even though the equipment may have a power transformer, the “linefi ter” capacitors which are usually connected between the transformer primary and chassis ground permit an ac flow ‘between chassis ground and earth ground. Therefore, if you Connect the ground lead of such test equipment to a sensi- tive point in transistorized equipment having an earth ‘ground, damage may result. ‘After soldering the connections using good solid-state practice, ‘complete the replacement job witha check ofthe bias, follow. ing the procedures provided by the equipment menufectue 1-33 MOSFET Handling Precautions In handling non-gate protected MOSFETS, such as the ECG220 and ECG22, the following precautions should be observed: Prior to assembly into a circu, all leads should be kept shorted ‘together with the metal spring or antistatic material. ‘When devices are handled, the hand being used should be at {round potential Tips of soldaring irons should be grounded. Devices should never be inserted into or removed from circuit with power on. Gate-protected devices, such as the ECG222, incorporate spe- ‘ial back-to-back diodes that are diffused directly into the MOS. pellet and are electrically connected between each insu lated gate and the FET's source. These diodes effeciv bbypacs any voltage transiants which exceod approximately 210, volts and protect the gates against damage in all normal ha dling and usage, CMOS Handling Precautions “The input protection networks incorporated in all CMOS devices ae effective in a wide variety of device handling situations. To be totally safe, however, its desirable to restate the general Conditions for eliminating all possibilities of device damage. CMOS devices may be damaged if exposed to high static charges. The handling procedure shown below should be fol- lowed in order to assure against damaging the device 1. The leads of the deviees should be shorted with some type of Conductive material except when being tested or when actu- ally in the circuit. This wil prevent build up of static charges. 2. Alltool, jigs and fitures, soldering irons and any type of hhandling device should be grounded. 3. Transiont voltage can also damage CMOS devices. ‘Therefore, devices should not be plugged into, or removed from circuits while power i still on 4. fa lead isnot used, it must be either grounded or con- nected to the device circuitry. Which will depend on the logie circuit involved ‘able | indicates goneral handling procedures recom- ‘mended to prevent damage from static electrical charges. ‘otal protection results when personnel and materiale are all at the same or ground potential TabI Should be ‘Should Be Grounded to Conductive Common Point Handling Equipment x Metal Pants of Fiaures ‘and Tools x Handling Trays x x Soldering lrons x Table Tops. x x Transport Corts (Static Discharge Straps) ‘Manufacturing Operating *(Uilize Grounded Personnel Metal Wrist Straps) General Handling of “(Uilized Grounded Devices Metal Wrist Straps) + 470 Kohm series resistor Dry weather (relative humidity less than 30%) tends to multiply the accumulation of static charges on any surface. Conversely, higher humiity levels tend to reduce the magnitude ofthe sta- tic voltage generated. n a low-humidity enviconment, the han: dling precautions listed above take on added importance and ‘should be adhered to without exceptions. 1-34 Selecting a Bi-Polar Transistor for an Unlisted Type ifthe transistor tobe replaced is unmarked or not listed in the ECG Replacement Guide the following procedure can be used to make an accurate replacement saeco Step-by-step, determine each ofthe following parameters: 1. Polarity NPN or PNP Type of atonal silicon or germanium Operating frequency range Maximum voltage, eolector to emiter Maximum votage,eoloctor to babe Maximum collector current Maximum power dissipation Current gain Cave packaging tnd configuration Stop 1 Ista NPN or PNP device? Your fist source of information ‘would be the schomatie drawings. ithe arrow onthe emiter of the transistor symbol is pointing toward the base, you know itis PNP device, or ifit is pointing away from the base, itis @ NPN. wl & J 1B Now let's say for argument sake thatthe schematic has been ‘orawn incorrectly oF suppose you have no schematic, your next ‘ue would be to determine the polarity of the voltage between the emitter and collector. If the collector voltage is positive with respect to the emitter voltage, then ite @ NPN device, Ifthe collector voltage is nega ‘ive with respect to the emitter voltage, then itis a PNP device. Therefore, ifthe VCE (collector to emitter voltage) is postive, its NPN, of the VCE is negative, its PNP. An easy way to remem- ber the polarity ofthe collector voltage for each type is: NP osmve N PN ecanve P Next, you must decide whether the device is silicon or germa- nium. Tis is most effectively done by the use of a schematic ‘drawing. If you find thatthe D.C. bias voltage level between the base and emitter i 0.2 volts or less, itis probably a germanium, device. Now, if you get a bias voltage reading of 0.4 volts or ‘more, itis probably a silicon device. There will of course, be some cases where there will be either no bias or reverse bias ‘Voltage present. This would be the case in oscillator and sync dipper circuits. ‘Another way of determining the type of material ofa transistor is to look at the complexity ofthe rout with respect to the ‘number of components in a single stage. Germanium circuits {are much more complex due to germaniumm's unstable nature with respect to temperature changes and its high leakage cur- Tents, therefore, several components are required per stage to make it stable. Voltage dividers are used to compensate the bias voltage and an emitter limiting resistor is always used. silicon device, however, is very stable with respect to gain ‘when temperature changes and silicon has very low leakage ‘current. Therefore, a single silicon amplifier stage may only ‘consist of one resistor for base bias and one load resistor. Some circuits using silicon stil have more compensating com- ponents than they require but as design engineers have become more aware of the stability of silicon, circuits have become simpler. 1 Step 3 ‘After you have determined the polarity and type of material of ‘a device, you next determine the operating frequency range of the circuit in which itis used. Ths is done mainly by identifying the type of circuit and whether itis working in the audio range, the kilohertz range, or the megahertz range. Step 4 Next, you look at the schematic or the circuit and determine the ‘maximum collector to emitter voltage present in the circuit. In ‘most cases, itis best to use the supply voltage figure as your reference. This figure will then be used to select @ replacement device, which has a collector to emitter breakdown voltage at least slightly higher than the supply voltage. Preferably, the higher the collector to emitter breakdown voltage, the bette. Stop 5 Next, the collector to base maximum voltage must be dot ‘mined. if you have determined the collector to emitter maxi- ‘mur voltage requirements, then you can use this figure for the collector to base maximum voltage requirements. Stop 6 ‘The sixth step is to determine the maximum collector current. “To do this, you would consider the DC condition withthe device fully on, which of course would give you the highest current required of the device. Stop 7 Now that you have determined the maximum voltage and col- lector current requirements, you can use them in determining the maximum pawer requirements. However, the type of circuit where the device is used isthe major factor with respect to power dissipation. Hore we have some general wattage ranges for different circuit types. 1. Input stages, AF or RF, £0-200 miliwatts 2. IF stages and driver stages, 200 MW - 1 watt 3. Highor powor output stages 1 watt and up Stop 8 ‘Next, you determine the gain expected from the circuit. This is determined primarily by its application in a crcut. Some typical ‘gain categories a RF, Mixers IF and AF 80-160 RF and AF Drivers, 25-80 RF and AF Output 4-40 High Gain Preamps and Syne Separators 150-500 Step 9 Next, you determine the case packaging and overall dimen- sions. (Case type and size need only be considered where an ‘exact mechanical fits required. Otherwise, if you can fit the device into place, even though its not the exact case, it wil probably do the job as well as the original. Some high fre- ‘quency circuits may require exact replacements but even these Circuits will require some alignment touch-up, especially in the case of UHF circuits.) Step 10 Lastly, you note the lead configuration. (Lead configuration generally is not a prime consideration for replacement tran Sistors although it may be desirable for ease of insertion and appearence.) With the above 10 parameters determined, the application selector guides inthe transistor section can be used to find an ‘accurate replacement deviee. In_an emergency situation where @ replacement is listed in the ECG Semiconductor Guide but you do not have the recom- ‘mended type in stock, this procedure could be used to deter- ‘mine alternate ECG replacements with higher ratings or differ- ‘ent case of lead configurations. SCR, Triac, Rectifier, and Bridge Replacement ‘A substitute rectifier, SCR triac or bridge can be used as long asitis: 1. Equal to or greater in current rating 2. Equal to or greater in voltage rating 3. na similar case 4 Has (for SCRs and triacs) the same or lower IGT rating 5. Has equal or faster switching speed ‘The important facto in point is that for proper heat transfer, substitutes for stud type devices should have the same stud size. ‘This s 60 you can simaly take out the defective device and install the new device without having to drill a new size hol inthe heat sink. In the case of axial lead devices, however, you may subst- tute if the case is equal to or smaller than the original device, Not all ECG devices can be substituted in the above manner. ‘The above-mentioned five substitution factors apply to SCR¢, triacs, rectifiers, and bridges only Voltage regulation zener sub- stitutions are somewhat les flexible. Since each zener is manu- Tactured for an used as a specific voltage regulator, you can- ‘ot substitute a different zener voltage. Testing Solid-State Det Precautions Chimmoens- Chmmetere must be used with pai cr in tra Sit creas st be rreribeed ha the ohater fs tera woage soumce: Als, soe wtrorts oe carat oF alvering high curents Mer text probes wit sharp points faclate checks on printed Sieur boars, Tey marmite danger of ccderaly rdg- Ing adlscentcorctor. Alo, he newae potrs easy poe roa, Verh, or eutce coroaton on the onuctor Fa reading are hen the reslt of nl making good connections onthe pied eral bord, ineirut measurements ar often misleading because ofthe then pth provided by wanes uncone tat boca or ward eed byte abstr supply. An smnpa 8 shoo inva. A Wh ino obmmeter connected nts fasion. the intl Batery pace forward bie on the erator useton of the tnsison ths effectively paces shun wth Re ‘onmmerer Fig. A. False resistance reading caused by forward-biased ‘emitter junction, In addition to shunt paths provides by transistor junctions, the physically small electrolytic capacitors employed as coupling and bypass capacitors also provide low-resistance shunt paths if the ohmmeter's internal supply should polarize them incorrectiy. 135

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