You are on page 1of 7

Philips Semiconductors Product specification

Rectifier diodes BYV79 series


ultrafast

GENERAL DESCRIPTION QUICK REFERENCE DATA


Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rectifier diodes in a plastic envelope,
featuring low forward voltage drop, BYV79- 100 150 200
ultra-fast recovery times and soft VRRM Repetitive peak reverse 100 150 200 V
recovery characteristic. They are voltage
intended for use in switched mode VF Forward voltage 0.9 0.9 0.9 V
power supplies and high frequency IF(AV) Forward current 14 14 14 A
circuits in general where low trr Reverse recovery time 30 30 30 ns
conduction and switching losses are
essential.

PINNING - TO220AC PIN CONFIGURATION SYMBOL


PIN DESCRIPTION
tab

1 cathode (k)
a k
2 anode (a)
tab cathode (k)

1 2

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
VRRM Repetitive peak reverse voltage - 100 150 200 V
VRWM Crest working reverse voltage - 100 150 200 V
VR Continuous reverse voltage1 - 100 150 200 V
IF(AV) Average forward current2 square wave; δ = 0.5; - 14 A
Tmb ≤ 120 ˚C
sinusoidal; a = 1.57; - 12.7 A
Tmb ≤ 122 ˚C
IF(RMS) RMS forward current - 20 A
IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 28 A
Tmb ≤ 120 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 150 A
current t = 8.3 ms - 160 A
sinusoidal; with reapplied
VRWM(max)
I2t I2t for fusing t = 10 ms - 112 A2s
Tstg Storage temperature -40 150 ˚C
Tj Operating junction temperature - 150 ˚C

1 Tmb ≤ 145˚C for thermal stability.


2 Neglecting switching and reverse current losses.

October 1994 1 Rev 1.100


Philips Semiconductors Product specification

Rectifier diodes BYV79 series


ultrafast

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 2.0 K/W
mounting base
Rth j-a Thermal resistance junction to in free air - 60 - K/W
ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF Forward voltage IF = 14 A; Tj = 150˚C - 0.83 0.90 V
IF = 14 A - 0.95 1.05 V
IF = 50 A - 1.20 1.30 V
IR Reverse current VR = VRWM; Tj = 100 ˚C - 0.5 1.3 mA
VR = VRWM - 5 50 µA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Qs Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 6 15 nC
trr Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 30 ns
-dIF/dt = 100 A/µs
Irrm Peak reverse recovery current IF = 10 A; VR ≥ 30 V; - 3 4 A
-dIF/dt = 50 A/µs; Tj = 100 ˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 1 - V

October 1994 2 Rev 1.100


Philips Semiconductors Product specification

Rectifier diodes BYV79 series


ultrafast

PF / W BYV79 Tmb(max) / C
dI 15 120
I F Vo = 0.744 V a = 1.57
F Rs = 0.0112 Ohms
dt 1.9
2.2
t 2.8
rr 10 130

time 4

5 140
Q 10% 100%
s
I
R I
rrm 0 150
0 5 10 15
IF(AV) / A

Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).

I trr / ns
F 1000

IF=10A
100

time
IF=1A
V
F
10

V
fr
V
F 1
1 10 100
time dIF/dt (A/us)

Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 ˚C.

PF / W BYV79 Tmb(max) / C trr / ns


20 110 1000
Vo = 0.744 V D = 1.0
Rs = 0.0112 Ohms

0.5
15 120 IF=10A
100
0.2
0.1 130
10 IF=1A

10
tp tp
I D= 140
5 T

t
T Tj = 100 C
0 150 1
0 5 10 15 20 25 1 10 100
IF(AV) / A -dIF/dt (A/us)

Fig.3. Maximum forward dissipation PF = f(IF(AV)); Fig.6. Maximum trr at Tj = 100 ˚C.
square current waveform where IF(AV) =IF(RMS) x √D.

October 1994 3 Rev 1.100


Philips Semiconductors Product specification

Rectifier diodes BYV79 series


ultrafast

10
Irrm / A 1000 Qs / nC

IF=10A
100 IF=10A
1
5A
2A
IF=2A

0.1 10

0.01 1.0
1 10 100 1.0 10 100
-dIF/dt (A/us) -dIF/dt (A/us)
Fig.7. Maximum Irrm at Tj = 25 ˚C. Fig.10. Maximum Qs at Tj = 25 ˚C.

IF / A Zth (K/W)
10 10

IF=10A
1 IF=2A 1

0.1 0.1
PD tp

Tj = 100 C t
0.01 0.01
1 10 100 10 us 1 ms 0.1 10
-dIF/dt (A/us) tp / s
Fig.8. Maximum Irrm at Tj = 100 ˚C. Fig.11. Transient thermal impedance; Zth j-mb = f(tp).

IF / A
60

Tj = 150 C
50
Tj = 25 C

40

30

20
typ
10
max
0
0 0.5 1.0 1.5 2
VF / V

Fig.9. Typical and maximum forward characteristic


IF = f(VF); parameter Tj

October 1994 4 Rev 1.100


Philips Semiconductors Product specification

Rectifier diodes BYV79 series


ultrafast

MECHANICAL DATA

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max
3,0 max
not tinned

3,0
13,5
min
1,3
max 1 2
(2x) 0,9 max (2x)
0,6
5,08 2,4

Fig.12. TO220AC; pin 1 connected to mounting base.

Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

October 1994 5 Rev 1.100


Philips Semiconductors Product specification

Rectifier diodes BYV79 series


ultrafast

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1994 6 Rev 1.100


This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

You might also like