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Lecture 3 - Semiconductor Bandgap and Photon Absorption V1
Lecture 3 - Semiconductor Bandgap and Photon Absorption V1
Solar Radiation to Usable
Energy
• Photosynthetic System
• Photovoltaic System
• Photoelectrochemical
1
Photosynthetic Systems
2
Simple Photosynthetic Reaction
Photosynthesis
Aerobic Reaction
6 H 2O 6O2 6CO 2 H 2 0 Energy
3
Why are plants green?
4
Efficiency of Photosynthetic Systems as an Energy Source
Sunlight to Biomass Efficiency
Plants, Typical 0.1%
Crop Plants 0.2 to 2%
Sugarcane 7‐8% peak
5
6
7
Generation value competitiveness of large
ground‐mounted applications in Europe
Average PV generation cost
in 2010 and 2011
EPIA, “Solar Photovoltaics Competing in the Energy Sector – On the road to competitiveness,” 2011.
8
Photoelectrochemical System
• These can produce
– Electricity
– Fuel
– Or both and the same time!
9
Lewis p.23 10
Photoelectrochemical Systems
PEC
• Essentially three types:
– Regenerative
– Photo‐Reduction and Photo‐Oxidation
– Dye‐Sensitized Regenerative
11
Regenerative System
Rajeshwar p.44 12
Photo‐Reduction and Photo‐Oxidation System
Rajeshwar p.44 13
Dye‐Sensitized Photoelectrochemical System
Rajeshwar p.44 14
Understanding Required
• To understand the semiconducting/liquid
junctions a review of basic concepts is
required
– Solid state physics
– Electrochemistry
– Surface chemistry
15
Band Structure and Optical Properties
of Semiconductors
• A key property which makes semiconductors of
interest is the delocalization of electrons throughout
the crystal structure
– “Band Theory” is used to describe the electronic structure
16
Eg ECB EVB
• Electron occupancy of the
bands must be considered
• The bottom of the
conduction band is called the
conduction band edge ECB
• The top of the valence band
is called the valence band
edge EVB
• The energy difference is
called the semiconductor
band gap
Lewis p.34 17
• The band gap Eg is probably the
most important property of a
semiconductor
h Eg
Lewis p.34 18
Figure 2.17 Position of energy bands of various semiconductors in the dark (d) and in the light (l) with respect to the SHE and SCE electrochemical
scales U and the vacuum reference energy level E.
19
Rajeshwar p.11 20
• Vacuum Level is the energy of an
electron in vacuum 0eV.
– Energy of electron in 1S orbital of H
atom is ‐13.6eV
• Energy scale used by electrochemists is
opposite in sign, the more tightly
bound electrons have a more positive
energy.
– This is based on the work function
convention, the energy required to
remove an electron from any electronic
state in the solid.
21
Chemical Properties of Inorganic
Semiconductors
• Each has its own valence and conduction band
structure
– These effect the chemical reactivity of the
photogenerated carriers
• However a distinction can be made between
– Covalent e.g. Si
– Ionic e.g. TiO2
22
Covalent Solid
• The valence and conduction bands can be considered
crystal orbitals that are either bonding or antibonding
• The bands tend to be relatively close, thus Eg is small
• This results in a more “chemically reactive” material
– This also has implications to their chemical stability too…
23
Ionic Solid
• The energies of the valence and conductions bands are
generally very different, resulting in a large Eg
• The result is that they tend to be more chemically
stable, e.g. TiO2
– The valence band is composed of filled 2p orbitals of O2‐
– The conduction band is composed of empty 3d orbitals of
Ti4+
– The band gap is not an energy gap between bonding and
antibonding orbitals but it is the energy gap between two
very different orbitals
24
• The most important electronic transition for energy
conversion applications is that of the electron from
the valence to the conduction band
• This is the 1st step in photoelectrochemical
conversion of optical energy to electrical and/or
chemical energy
• There is a definite threshold, due to the band‐gap
energy Eg
25
Photon absorption and the Band‐Gap
3. Absorption & Thermalization
1. Band Edge Absorption
e-
Energy lost = h-Eg
e- 2. No absorption
CB e-
h>Eg
h=Eg
h<Eg
VB
h+
h+
26
Photon absorption ‐ Thermalisation
• Photons with an energy lesser than the
band gap are not absorbed
h>Eg
• The consequence is that with a smaller
band‐gap more photons are absorbed,
but the excess energy is lost
h+
27
What is the ideal band gap?
28
Too large a band gap and few photons are absorbed
e- CB
0.5eV
1.5eV
2.5eV
+
VB
h
29
Too small a band gap, most photons are absorbed but a lot of
energy of each photon is lost due to thermalization
e-
e-
0.5eV e- CB
1.5eV
2.5eV
+ + +
VB
h h h
30
We must strike a balance between the number of absorbed photons, and the electrical
potential energy (~Eg) each electron will have by remaining in the conduction band
e- CB e- e-
e- e-
CB
0.5eV
0.5eV 0.5eV e- CB
1.5eV
1.5eV 1.5eV
2.5eV
2.5eV 2.5eV
+
VB VB VB
h +
h h + +
h h h + +
31
e- CB e- e-
e- e-
CB
0.5eV
0.5eV 0.5eV e- CB
1.5eV
1.5eV 1.5eV
2.5eV
2.5eV 2.5eV
VB VB VB
h+ h+ h+ h+ h+ h+
32
33
e-
e-
CB
0.5eV
1.5eV
2.5eV
+ +
VB
h h
34
e-
e-
CB
0.5eV
1.5eV
2.5eV
+ +
VB
h h
35
e- CB e- e-
e- e-
CB
0.5eV
0.5eV 0.5eV e- CB
1.5eV
1.5eV 1.5eV
2.5eV
2.5eV 2.5eV
VB VB VB
h+ h+ h+ h+ h+ h+
36
• From this simple approach we can
observe
• ideal band gap which lies
between 0.8eV and 1.3eV.
• Max power conversion is c.a.
50%
• This is a very simple approach. In
fact the efficiency limit for a
device with a single band gap is
c.a. 34% ‐ Shockley–Queisser limit
37
• There is a threshold of due to Eg
that limits the number of photons
that can be absorbed
• And thus is one of the constraints
that limits energy conversion
Lewis p.36 38