1.

The diffusion potential across p-n junction

(a) Decreases with increasing doping concentration
(b) Increases with decreasing band gap
(c) Does not depend on doping concentrations
(d) Increases with increase in doping concentrations
2. The depletion capacitance, CJ , of an abrupt p-n junction with constant doping on either side
varies with reverse bias VR, as
(a) CJ α VR
(b) CJ α VR-1
(c) CJ α VR-1/2
(d) CJ α VR-1/3
3. To obtain very high input and output impedances in a feedback amplifier, the topology,
mostly used is
(a) Voltage- series
(b) Current- series
(c) Voltage-shunt
(d) Current-shunt
4. A power amplifiers delivers 50W output at 50%efficincy. The ambient temperature is 25 0 C. if
maximum allowable junction temperature is 150 0 C, then maximum thermal resistance θjc
that can be tolerated is
(a) 250 C/W
(b) 200 C/W
(c) 50 C/W
(d) 10 C/W
5. In a Bipolar transistor at room temperature, If emitter current is doubled, then voltage
across its base emitter junction
(a) Doubles
(b) Halves
(c) Increases by about 20mV
(d) Decreases by about 20mV
6. A switched mode power supply operating at 20 kHz to 100kHz range uses as the main
switching element is
(a) Thyristor
(b) MOSFET
(c) Triac
(d) UJT
7. In N-channel JFET has IDSS =1mA and Vp = -5V. It’s maximum transconductance is
(a) 0.1 milli mho
(b) 0.4 milli mho
(c) 1.0 milli mho
(d) 4.0 milli mho
8. An increase in the base recombination of a BJT will increase
(a) The common emitter dc current gain β
(b) The breakdown voltage BVCEO
(c) The unity –gain cut-off frequency fT
(d) The transconductance gm
9. A silicon PN junction is forward baised with a constant current at room temperature. When
the temperature is increased by 10 0 C, the forward bias voltage across the PN junction
 (a) Increases by 60 mV
(b) Decreases by 60 mV
(c) Increases by 25 mV
(d) Decreases by 25 mV
10. Thermal runaway not possible in FET because as the temperature of FET increases
(a) Mobility decreases
(b) Transconductance increases
(c) Drain current increases
(d) None of these
11. Class AB operation is often used in power amplifiers in order to
(a) Get maximum efficiency
(b) Remove even harmonics
(c) Overcome a cross-over distortion
(d) Reduce collector dissipation
12.